[go: up one dir, main page]

WO1997034190A1 - Dispositif d'affichage a cristaux liquides - Google Patents

Dispositif d'affichage a cristaux liquides Download PDF

Info

Publication number
WO1997034190A1
WO1997034190A1 PCT/JP1997/000739 JP9700739W WO9734190A1 WO 1997034190 A1 WO1997034190 A1 WO 1997034190A1 JP 9700739 W JP9700739 W JP 9700739W WO 9734190 A1 WO9734190 A1 WO 9734190A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
display device
crystal display
divided electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1997/000739
Other languages
English (en)
Japanese (ja)
Inventor
Yasuto Obikawa
Hisashi Aruga
Tadashi Tsuyuki
Takeyoshi Ushiki
Hiromi Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP53242697A priority Critical patent/JP3343739B2/ja
Priority to TW086103356A priority patent/TW475085B/zh
Publication of WO1997034190A1 publication Critical patent/WO1997034190A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device

Definitions

  • the present invention relates to a liquid crystal display device, and particularly to a technique for compensating for a defect of an active element formed on a liquid crystal panel.
  • a liquid crystal panel with a liquid crystal layer interposed between two substrates is provided with a plurality of pixel areas, and each pixel area has an active (active) element such as a TFT (thin film transistor) or MIM (metal-insulator-metal) element.
  • active element such as a TFT (thin film transistor) or MIM (metal-insulator-metal) element.
  • a liquid crystal display device of a type in which elements (for example, non-linear elements) are provided and driven by a method of setting the display state of each pixel region via these active elements is manufactured. For example, by turning on / off the active element based on its non-linearity, the potential applied to the pixel electrode in each pixel area connected to the active element is controlled, and the voltage applied to the liquid crystal layer is controlled. Is adjusted to select the liquid crystal state in the pixel area.
  • FIG. 5 is a perspective view showing a pattern shape on one substrate of a liquid crystal display device provided with a MIM (metal-insulator-metal) element as an example of an active element.
  • a wiring layer 2 formed by applying tantalum (Ta) on a substrate is provided, and a first electrode portion 2a is formed in the wiring layer 2 for each pixel region G.
  • Anodizing is performed on the surface of the first electrode portion 2a to form an anodized film, and a second electrode 3 formed by depositing chromium (Cr) thereon is formed.
  • the transparent electrode 4 corresponding to the pixel region G is formed of IT 0 (indium oxide) so as to overlap the tip of the second electrode 3.
  • IT 0 indium oxide
  • the transparent electrode 4 may be formed as a chrome electrode integrated with the second electrode 3 in some cases.
  • An empty cell is formed on the substrate thus formed by forming a transparent electrode on the other transparent substrate and joining the transparent electrode through a sealing material and a spacer.
  • a liquid crystal panel is formed by injecting liquid crystal into these empty cells.
  • the driving potential of the transparent electrode 4 is controlled from the wiring layer 2 through the MIM element including the first electrode portion 2 a, the anodic oxide film, and the second electrode 3.
  • the MIM element has an unstable metal-insulator junction, it is easy for defects to occur at this junction, and due to its microstructure, not only at the junction but also at any places such as the wiring section In this case, there is a possibility that leakage (short circuit) at the junction and breakage of the pattern may occur.
  • the present invention is to solve the above-mentioned problem, and to provide a liquid crystal display device having an active element without losing the pixel area even if a leak or pattern cut of the active element occurs.
  • the goal is to achieve a new structure that can be implemented. Disclosure of the invention
  • Means taken by the present invention to solve the above-mentioned problem is that at least one of the pair of substrates has a liquid crystal layer interposed between a pair of light-transmitting substrates, and is formed on at least one of the pair of substrates.
  • a liquid crystal display device comprising a plurality of pixel areas corresponding to pixel electrodes, wherein a plurality of active elements conductively connected to a wiring layer are formed for each of the pixel areas, and the pixel electrodes are capacitively connected to each other.
  • a liquid crystal display device comprising: a plurality of divided and / or resistance-coupled divided electrode portions; and each of the active elements is conductively connected to a different one of the divided electrode portions.
  • the controllability of the display state by the divided electrode portion corresponding to the active element is reduced, so that a defective active element is found by a display test. Then, by disconnecting the connection, the divided electrode section is capacitively coupled and / or resistively coupled. It is indirectly driven by the divided electrode portion, thereby preventing the occurrence of display defects. Further, when a pattern break occurs in the active element or in the vicinity thereof, the split electrode portion in which the pattern is cut is indirectly driven by the capacitively or resistively coupled split electrode portion, thereby preventing display defects from occurring.
  • the coupling between the split electrode portions may be any of a capacitive coupling portion and a resistive coupling portion, as long as the movement of charges is restricted. Also, a coupled state having both capacitance and resistance may be used.
  • the active element may be a non-linear element having a conductor-insulator-conductor junction.
  • the present invention is particularly effective because a leak at the conductor-insulator-conductor junction easily occurs.
  • the coupling part for capacitively coupling and / or resistance-coupling the divided electrode part is further provided with a capacitive coupling structure using at least one metal and / or insulator constituting the two-terminal nonlinear element. It is preferable to configure. In this case, by using the same metal and / or insulator as the structural pattern of the active element, the element can be easily formed without increasing the number of manufacturing steps.
  • a coupling portion for capacitively coupling and / or resistance coupling the divided electrode portion is formed of an insulating layer in contact with the two divided electrode portions for capacitive coupling, and a metal layer opposed to the contact portion.
  • a capacitor can be separately formed between the two divided electrode portions via the metal layer, so that the occurrence of insulation failure of the insulating layer can be suppressed and the insulation can be suppressed. Capacitance coupling between the divided electrode portions can be easily performed in the production by the laminated structure of the layer and the metal layer.
  • a coupling portion that capacitively couples and / or resistance-couples the divided electrode portions is formed so as to shield a gap between the divided electrode portions from light.
  • the gap formed between the divided electrode portions is Since light is shielded, light leakage in the pixel region can be prevented.
  • the active element be electrically connected at a plurality of locations of the split electrode portion. In this case, the reliability of the conductive connection between the active element and the divided electrode can be improved.
  • FIG. 1 is a perspective view showing a pattern configuration on one substrate in an embodiment of a liquid crystal display device according to the present invention.
  • FIG. 2 is an explanatory sectional view schematically showing a sectional structure in the embodiment.
  • FIG. 3 is a perspective view showing a pattern configuration on one substrate in a different embodiment.
  • FIG. 4 is a graph showing drive characteristics of the MIM element.
  • FIG. 5 is a perspective view showing a pattern configuration on one substrate of a liquid crystal display device provided with a conventional MIM element.
  • FIG. 1 is an explanatory plan view (perspective view) showing a state of one transparent substrate surface of a liquid crystal display device according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional structure of the embodiment.
  • FIG. 4 is an explanatory view of a cross-sectional structure shown in FIG.
  • a liquid crystal display device including a MIM element will be described in detail as an example of the active element.
  • tantalum (Ta) is applied to a thickness of about 500 to 100 A by a sputtering method, and is subjected to thermal oxidation to form an oxide film.
  • the oxidized film 11 is for improving the adhesion between the transparent substrate 10 made of non-alkali glass and a wiring layer described later.
  • tantalum is deposited on the surface of the tantalum oxide film 11 to a thickness of about 1200 to 180 A by a sputtering method, and patterned in a predetermined pattern.
  • Wiring layer (Desert line) 12 is formed.
  • two extended first electrode portions 12a and 12b are formed for each pixel region G arranged along the extension direction.
  • the bonding layer 13 made of tantalum is formed simultaneously with the above-mentioned sputtering and patterning.
  • the first electrode portions 12a and 12b are anodized, and an anodic oxide film 12c is formed on the surface. Further, since anodizing treatment cannot be applied to the bonding layer 13 formed in an island shape as it is, an oxide film 13a is formed on the surface of the bonding layer 13 by thermal oxidation.
  • the transparent substrate 10 was heat-treated (annealed) in an inert gas such as nitrogen at 300 to 450 ° C. for about 2 hours, and then rapidly cooled in air.
  • Chromium (Cr) is deposited on the surface of the liquid crystal substrate 10 treated in this manner to a thickness of about 1000 A by sputtering, and a part thereof is formed on the anodic oxide film 12 c.
  • the second electrode layers 14 and 15 are formed by performing patterning as they are formed.
  • ITO indium tin oxide
  • the split electrode portions 16 and 17 are formed so as to overlap the oxide film 13a formed on the surface of the bonding layer 13 respectively. Therefore, the two divided electrode portions 16 and 17 are capacitively coupled via the coupling layer 13 and the oxide film 13a to form an integral pixel electrode 18.
  • the other transparent substrate 20 is bonded to the transparent substrate 10 thus formed via a sealing material and a spacer (not shown).
  • a transparent electrode 21 is formed on the inner surface of the transparent substrate 20, a transparent electrode 21 is formed.
  • a liquid crystal layer between the transparent electrode 21 and the opposing pixel electrode 18 forms a pixel region G.
  • two divided electrode portions 16 and 17 are formed for each pixel region G, and MIM elements are formed on the divided electrode portions 16 and 17 respectively. Further, the divided electrode portions 16 and 17 are capacitively coupled to each other via the coupling layer 13. Therefore, even if one of the MIM elements has a defect such as a poor junction and a leak occurs at the junction, no charge moves between the split electrodes, so the other split electrode is normal. Works.
  • the potential changes according to the potential of the wiring layer 12 with time due to leakage of the MIM element. And the coupling layer 13 via the oxide film 13a.
  • the defect division can be performed by controlling the potential of the normal divided electrode portion.
  • the potential of the electrode can also be controlled indirectly, making it possible to operate almost normally. is there.
  • the capacitance of the capacitive coupling portion be relatively large in order to suppress display defects at the time of leakage and to ensure normal operation at the time of pattern breakage. It should be set to an appropriate capacity value in relation.
  • the capacitive coupling portion is formed over the entire length of the opposing sides of the two divided electrode portions 16 and 17, the capacitance can be increased, while the capacitance coupling portion is formed via the coupling layer 13. Therefore, the two capacitors are connected in series, so that the capacitance value is smaller than that in the case where they are connected via one insulating layer.
  • the coupling layer 13 made of tantalum exists over the entire length of the opposing side between the divided electrode portions 16 and 17, the gap between the divided electrode portions is optically blocked. Therefore, it is possible to prevent leakage in the pixel and to form the wiring layer 12 at the same time when the wiring layer 12 is manufactured, so that the manufacturing can be performed with almost no change in the manufacturing process.
  • the oxide film 13a is interposed twice between the split electrode portions 16 and 17 via the coupling layer 13, leakage of the capacitance coupling portion due to a pinhole or the like is prevented. The incidence can be reduced.
  • the completed liquid crystal panel is held in the fully lit state or in the half-tone state, and the test is performed to reduce the contrast (normally white).
  • the contrast normally white
  • the transmittance is large and it looks white.
  • the pixel area defects caused by leakage can be found.
  • the MIM element having a poor connection is identified, and the conductive connection between the wiring layer corresponding to the MIM element and the split electrode portion is cut by laser light or the like, thereby forming the above-described pattern. The same state as the cut can be obtained, and the display defect can be eliminated.
  • This embodiment was applied to a normally white transmission type liquid crystal display device, and the transmittance of each pixel in a lighting state was measured.
  • the leakage rate of the MIM element was about 5%, and the occurrence rate of pattern break was less than 1%.
  • the 0 N transmittance of a pixel in which a leak has occurred in one of the MIM elements of the split electrode is about 1.2, where the ON transmittance of a normal pixel is 1, and the ON transmittance after a defective element is cut by laser.
  • the transmittance was about 1.05.
  • the 0 N transmittance of a pixel in which a pattern was cut on one of the divided electrode portions was about 1.05.
  • the incidence of white spot defects was reduced by about 10% after laser correction, and a significant improvement in yield was obtained.
  • the divided electrode portions 16 and 17 are connected to each other by the capacitive coupling portion.
  • the divided electrode portions 16 and 17 have an appropriate resistance value.
  • a resistance layer in place of the bonding layer 13 and the oxide film 13a using a conductive material, it is also possible to obtain substantially the same effect as described above.
  • This resistive layer suppresses the transfer of electric charge between the split electrodes, guarantees the potential control of the split electrode section to which a normal MIM element is connected in the event of a leak, and ensures the potential control from the normal split electrode section when a pattern break occurs. This is because electric potential can be transmitted. If the resistance of the resistive layer is too large and close to the insulator, the pattern will be cut.A display defect will occur in the corrected state after the leak has occurred.If the resistance of the resistive layer is too low, the split electrode on the leak side will be damaged. The appearance makes it difficult to identify.
  • the resistance value of the resistance layer is adjusted to the most preferable resistance value according to the material such as the layer thickness, the layer width, and the alloy composition.
  • the number of the divided electrode portions may be plural, and may be three or more.
  • FIG. 3 shows a case where a pixel electrode 40 in which three divided electrode portions 41, 42, and 43 are capacitively coupled to each other via two coupling layers 33 and 34 is formed in one pixel region G. 3 shows a plane pattern.
  • three MIM elements are formed from the wiring layer 32 to the first electrode portions 32a, 32b, and 32c, an anodic oxide film (not shown), and the second electrode layers 35, 36, and 37. They are connected to the electrode portions 41, 42, 43.
  • the display failure is eliminated by cutting the pattern of the leak portion. It can be operated with little trouble even if there is a break in the power.
  • the intermediate divided electrode portion 42 capacitively coupled to the two divided electrode portions 41 and 43 does not need to be connected to the MIM element from the beginning. In this case, this is equivalent to the case where any part of the MIM element including the first electrode portion 32c and the second electrode layer 36 has a cut pattern.
  • the conductive connection portion between the second electrode layer and the split electrode portion of the MIM element is provided in two places (14a, 14b, 15a, 15b, 3b in FIGS. 1 and 2). Since it is provided at 35a, 35b, 36a, 36b, 37a, 37b) in the figure, it is possible to reduce the possibility of the pattern being cut off at that portion.
  • the conductive connection portions are formed on both sides of the junction of the MIM element, and are provided on both sides near the corners of the split electrode portion. It can be suppressed, and the pixel area is hardly reduced.
  • the second electrode layers 14 and 15 are formed of chromium and have the MIM structure.
  • the second electrode layers are the same as the divided electrode sections 16 and 17. It may be formed soon by IT ⁇ .
  • the second electrode and the pixel electrode can be formed simultaneously in the same step, and the number of steps can be reduced.
  • the description has been given by taking the transmission type liquid crystal display device as an example.
  • the pixel electrode can be formed so as to also serve as a reflective layer.
  • the metal may be a chromium electrode that can be formed integrally with the second electrode layers 14 and 15.
  • each conductor described above can be variously used without being limited to the above example.
  • titanium, molybdenum, aluminum, or the like may be used instead of the chromium.
  • one active element is connected to each divided electrode part of the pixel electrode.
  • the number of active elements connected to the divided electrode part is not limited to one.
  • the active elements described above may be connected in series or in parallel to the divided electrode section.
  • the areas of the divided electrode portions may not be the same as each other, and divided electrode portions having different areas may be provided.
  • the present invention provides a liquid crystal display device having an active element, which can be commercialized without losing the pixel area even when the active element leaks or the pattern is cut. Has been realized.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention concerne un dispositif d'affichage à cristaux liquides ayant des éléments actifs présentant une structure nouvelle pouvant être fabriquée comme un article fini sans perte de régions de pixels même lorsque les éléments actifs présentent des fuites ou des motifs coupés. Des électrodes fendues (16, 17) sont superposées sur une couche d'oxyde (13a) formée sur la surface d'une couche de couplage (13) qui les couple de manière capacitive. La couche d'oxyde forme ainsi une électrode à pixels (18) de structure monobloc. Des éléments MIM sont connectés aux électrodes fendues (16 et 17). Même en cas de fuite dans la partie jointive d'un quelconque des éléments MIM, l'autre électrode fendue fonctionne correctement. Le même état que lorsque le motif est coupé est établi si un éléments MIM défectueux est coupé. Même lorsque le motif est coupé, les électrodes fendues (16 et 17) sont couplées de manière capacitive. Ainsi, le potentiel de l'électrode fendue défectueuse peut être régulé indirectement par la régulation du potentiel de l'électrode fendue à l'état normal.
PCT/JP1997/000739 1996-03-12 1997-03-10 Dispositif d'affichage a cristaux liquides Ceased WO1997034190A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP53242697A JP3343739B2 (ja) 1996-03-12 1997-03-10 液晶表示装置、及びアクテイブ素子基板
TW086103356A TW475085B (en) 1996-03-12 1997-03-18 Liquid crystal display device and the active device substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5520296 1996-03-12
JP8/55202 1996-03-12

Publications (1)

Publication Number Publication Date
WO1997034190A1 true WO1997034190A1 (fr) 1997-09-18

Family

ID=12992096

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/000739 Ceased WO1997034190A1 (fr) 1996-03-12 1997-03-10 Dispositif d'affichage a cristaux liquides

Country Status (5)

Country Link
JP (1) JP3343739B2 (fr)
KR (1) KR100493491B1 (fr)
CN (1) CN1111757C (fr)
TW (1) TW475085B (fr)
WO (1) WO1997034190A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001188217A (ja) 1999-10-20 2001-07-10 Sharp Corp アクティブマトリクス型液晶表示装置およびその駆動方法ならびに製造方法
KR100840312B1 (ko) * 2001-10-05 2008-06-20 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판
KR100895307B1 (ko) * 2002-09-27 2009-05-07 삼성전자주식회사 복수의 부화소로 이루어진 화소를 구비한 액정 표시 장치
KR100920355B1 (ko) * 2003-03-28 2009-10-07 삼성전자주식회사 액정 표시 장치용 박막 다이오드 표시판 및 이를 포함하는액정 표시 장치
JP4314926B2 (ja) * 2003-08-04 2009-08-19 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP4557800B2 (ja) * 2005-05-24 2010-10-06 シャープ株式会社 液晶表示装置
CN100419558C (zh) * 2006-11-27 2008-09-17 友达光电股份有限公司 液晶显示面板及其主动元件阵列基板
KR101407287B1 (ko) * 2006-12-19 2014-06-16 엘지디스플레이 주식회사 액정표시장치 및 이의 리페어 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372324A (ja) * 1989-08-14 1991-03-27 Sharp Corp アクティブマトリクス表示装置
JPH03122618A (ja) * 1989-10-05 1991-05-24 Nec Corp 薄膜二端子素子型アクティブマトリクス液晶表示装置
JPH03210534A (ja) * 1990-01-16 1991-09-13 Seiko Instr Inc 二端子素子
JPH05273598A (ja) * 1992-03-25 1993-10-22 Seiko Epson Corp 液晶表示装置
JPH05289108A (ja) * 1992-04-15 1993-11-05 Fujitsu Ltd 液晶表示装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372324A (ja) * 1989-08-14 1991-03-27 Sharp Corp アクティブマトリクス表示装置
JPH03122618A (ja) * 1989-10-05 1991-05-24 Nec Corp 薄膜二端子素子型アクティブマトリクス液晶表示装置
JPH03210534A (ja) * 1990-01-16 1991-09-13 Seiko Instr Inc 二端子素子
JPH05273598A (ja) * 1992-03-25 1993-10-22 Seiko Epson Corp 液晶表示装置
JPH05289108A (ja) * 1992-04-15 1993-11-05 Fujitsu Ltd 液晶表示装置及びその製造方法

Also Published As

Publication number Publication date
JP3343739B2 (ja) 2002-11-11
CN1190471A (zh) 1998-08-12
CN1111757C (zh) 2003-06-18
KR19990014721A (ko) 1999-02-25
KR100493491B1 (ko) 2005-08-31
TW475085B (en) 2002-02-01

Similar Documents

Publication Publication Date Title
JP3658849B2 (ja) 液晶表示素子及びその製造方法
CN101964324B (zh) 有源矩阵基板和显示装置
JP3418653B2 (ja) アクティブマトリクス型液晶表示装置
KR100306093B1 (ko) 표시소자용전극기판및그제조방법
US5434686A (en) Active matrix display device
CN100463018C (zh) 有源矩阵衬底、显示装置以及像素缺陷修正方法
US11411072B2 (en) Display substrate, display device, manufacturing method, and repair method for display substrate
KR20000057935A (ko) 액정 표시 장치 및 그 제조 방법
WO1997034190A1 (fr) Dispositif d'affichage a cristaux liquides
US5471329A (en) Active matrix type liquid crystal display panel and a method for producing the same, having a construction capable of preventing breakdown of the switching elements or deterioration due to static electricity
WO2006080129A1 (fr) Dispositif d'affichage, dispositif d'affichage a cristaux liquides et procede de fabrication du dispositif d'affichage
JPWO1997034190A1 (ja) 液晶表示装置
JPH08328035A (ja) 液晶表示装置およびその製法ならびに点欠陥の修復方法
JPH10319438A (ja) アクティブマトリクス基板、その製造方法およびその欠陥修正方法
US8274104B2 (en) Repair structure and active device array substrate
EP0775932B1 (fr) Dispositif d'affichage à cristal liquide
JPH06148616A (ja) 液晶表示パネル
JPH04283725A (ja) 薄膜トランジスタマトリクス及びその断線修復方法
US5739547A (en) Reflection type display
JP3229905B2 (ja) 液晶表示パネルとその製造方法
JP2001281695A (ja) 薄膜静電容量の製造方法および液晶表示装置
KR20020079439A (ko) 비선형 소자 제조 방법, 전기 광학 장치 제조 방법, 전기광학 장치 및 전자 기기
JPH04278927A (ja) アクティブマトリクス表示装置
JP3102037B2 (ja) 電気光学装置
JPH09179134A (ja) 液晶表示装置及びその製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 97190478.2

Country of ref document: CN

AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR

WWE Wipo information: entry into national phase

Ref document number: 1019970708063

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1019970708063

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1019970708063

Country of ref document: KR