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WO1997034190A1 - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
WO1997034190A1
WO1997034190A1 PCT/JP1997/000739 JP9700739W WO9734190A1 WO 1997034190 A1 WO1997034190 A1 WO 1997034190A1 JP 9700739 W JP9700739 W JP 9700739W WO 9734190 A1 WO9734190 A1 WO 9734190A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid crystal
display device
crystal display
divided electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1997/000739
Other languages
French (fr)
Japanese (ja)
Inventor
Yasuto Obikawa
Hisashi Aruga
Tadashi Tsuyuki
Takeyoshi Ushiki
Hiromi Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP53242697A priority Critical patent/JP3343739B2/en
Priority to TW086103356A priority patent/TW475085B/en
Publication of WO1997034190A1 publication Critical patent/WO1997034190A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136259Repairing; Defects
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/13624Active matrix addressed cells having more than one switching element per pixel
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1365Active matrix addressed cells in which the switching element is a two-electrode device

Definitions

  • the present invention relates to a liquid crystal display device, and particularly to a technique for compensating for a defect of an active element formed on a liquid crystal panel.
  • a liquid crystal panel with a liquid crystal layer interposed between two substrates is provided with a plurality of pixel areas, and each pixel area has an active (active) element such as a TFT (thin film transistor) or MIM (metal-insulator-metal) element.
  • active element such as a TFT (thin film transistor) or MIM (metal-insulator-metal) element.
  • a liquid crystal display device of a type in which elements (for example, non-linear elements) are provided and driven by a method of setting the display state of each pixel region via these active elements is manufactured. For example, by turning on / off the active element based on its non-linearity, the potential applied to the pixel electrode in each pixel area connected to the active element is controlled, and the voltage applied to the liquid crystal layer is controlled. Is adjusted to select the liquid crystal state in the pixel area.
  • FIG. 5 is a perspective view showing a pattern shape on one substrate of a liquid crystal display device provided with a MIM (metal-insulator-metal) element as an example of an active element.
  • a wiring layer 2 formed by applying tantalum (Ta) on a substrate is provided, and a first electrode portion 2a is formed in the wiring layer 2 for each pixel region G.
  • Anodizing is performed on the surface of the first electrode portion 2a to form an anodized film, and a second electrode 3 formed by depositing chromium (Cr) thereon is formed.
  • the transparent electrode 4 corresponding to the pixel region G is formed of IT 0 (indium oxide) so as to overlap the tip of the second electrode 3.
  • IT 0 indium oxide
  • the transparent electrode 4 may be formed as a chrome electrode integrated with the second electrode 3 in some cases.
  • An empty cell is formed on the substrate thus formed by forming a transparent electrode on the other transparent substrate and joining the transparent electrode through a sealing material and a spacer.
  • a liquid crystal panel is formed by injecting liquid crystal into these empty cells.
  • the driving potential of the transparent electrode 4 is controlled from the wiring layer 2 through the MIM element including the first electrode portion 2 a, the anodic oxide film, and the second electrode 3.
  • the MIM element has an unstable metal-insulator junction, it is easy for defects to occur at this junction, and due to its microstructure, not only at the junction but also at any places such as the wiring section In this case, there is a possibility that leakage (short circuit) at the junction and breakage of the pattern may occur.
  • the present invention is to solve the above-mentioned problem, and to provide a liquid crystal display device having an active element without losing the pixel area even if a leak or pattern cut of the active element occurs.
  • the goal is to achieve a new structure that can be implemented. Disclosure of the invention
  • Means taken by the present invention to solve the above-mentioned problem is that at least one of the pair of substrates has a liquid crystal layer interposed between a pair of light-transmitting substrates, and is formed on at least one of the pair of substrates.
  • a liquid crystal display device comprising a plurality of pixel areas corresponding to pixel electrodes, wherein a plurality of active elements conductively connected to a wiring layer are formed for each of the pixel areas, and the pixel electrodes are capacitively connected to each other.
  • a liquid crystal display device comprising: a plurality of divided and / or resistance-coupled divided electrode portions; and each of the active elements is conductively connected to a different one of the divided electrode portions.
  • the controllability of the display state by the divided electrode portion corresponding to the active element is reduced, so that a defective active element is found by a display test. Then, by disconnecting the connection, the divided electrode section is capacitively coupled and / or resistively coupled. It is indirectly driven by the divided electrode portion, thereby preventing the occurrence of display defects. Further, when a pattern break occurs in the active element or in the vicinity thereof, the split electrode portion in which the pattern is cut is indirectly driven by the capacitively or resistively coupled split electrode portion, thereby preventing display defects from occurring.
  • the coupling between the split electrode portions may be any of a capacitive coupling portion and a resistive coupling portion, as long as the movement of charges is restricted. Also, a coupled state having both capacitance and resistance may be used.
  • the active element may be a non-linear element having a conductor-insulator-conductor junction.
  • the present invention is particularly effective because a leak at the conductor-insulator-conductor junction easily occurs.
  • the coupling part for capacitively coupling and / or resistance-coupling the divided electrode part is further provided with a capacitive coupling structure using at least one metal and / or insulator constituting the two-terminal nonlinear element. It is preferable to configure. In this case, by using the same metal and / or insulator as the structural pattern of the active element, the element can be easily formed without increasing the number of manufacturing steps.
  • a coupling portion for capacitively coupling and / or resistance coupling the divided electrode portion is formed of an insulating layer in contact with the two divided electrode portions for capacitive coupling, and a metal layer opposed to the contact portion.
  • a capacitor can be separately formed between the two divided electrode portions via the metal layer, so that the occurrence of insulation failure of the insulating layer can be suppressed and the insulation can be suppressed. Capacitance coupling between the divided electrode portions can be easily performed in the production by the laminated structure of the layer and the metal layer.
  • a coupling portion that capacitively couples and / or resistance-couples the divided electrode portions is formed so as to shield a gap between the divided electrode portions from light.
  • the gap formed between the divided electrode portions is Since light is shielded, light leakage in the pixel region can be prevented.
  • the active element be electrically connected at a plurality of locations of the split electrode portion. In this case, the reliability of the conductive connection between the active element and the divided electrode can be improved.
  • FIG. 1 is a perspective view showing a pattern configuration on one substrate in an embodiment of a liquid crystal display device according to the present invention.
  • FIG. 2 is an explanatory sectional view schematically showing a sectional structure in the embodiment.
  • FIG. 3 is a perspective view showing a pattern configuration on one substrate in a different embodiment.
  • FIG. 4 is a graph showing drive characteristics of the MIM element.
  • FIG. 5 is a perspective view showing a pattern configuration on one substrate of a liquid crystal display device provided with a conventional MIM element.
  • FIG. 1 is an explanatory plan view (perspective view) showing a state of one transparent substrate surface of a liquid crystal display device according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional structure of the embodiment.
  • FIG. 4 is an explanatory view of a cross-sectional structure shown in FIG.
  • a liquid crystal display device including a MIM element will be described in detail as an example of the active element.
  • tantalum (Ta) is applied to a thickness of about 500 to 100 A by a sputtering method, and is subjected to thermal oxidation to form an oxide film.
  • the oxidized film 11 is for improving the adhesion between the transparent substrate 10 made of non-alkali glass and a wiring layer described later.
  • tantalum is deposited on the surface of the tantalum oxide film 11 to a thickness of about 1200 to 180 A by a sputtering method, and patterned in a predetermined pattern.
  • Wiring layer (Desert line) 12 is formed.
  • two extended first electrode portions 12a and 12b are formed for each pixel region G arranged along the extension direction.
  • the bonding layer 13 made of tantalum is formed simultaneously with the above-mentioned sputtering and patterning.
  • the first electrode portions 12a and 12b are anodized, and an anodic oxide film 12c is formed on the surface. Further, since anodizing treatment cannot be applied to the bonding layer 13 formed in an island shape as it is, an oxide film 13a is formed on the surface of the bonding layer 13 by thermal oxidation.
  • the transparent substrate 10 was heat-treated (annealed) in an inert gas such as nitrogen at 300 to 450 ° C. for about 2 hours, and then rapidly cooled in air.
  • Chromium (Cr) is deposited on the surface of the liquid crystal substrate 10 treated in this manner to a thickness of about 1000 A by sputtering, and a part thereof is formed on the anodic oxide film 12 c.
  • the second electrode layers 14 and 15 are formed by performing patterning as they are formed.
  • ITO indium tin oxide
  • the split electrode portions 16 and 17 are formed so as to overlap the oxide film 13a formed on the surface of the bonding layer 13 respectively. Therefore, the two divided electrode portions 16 and 17 are capacitively coupled via the coupling layer 13 and the oxide film 13a to form an integral pixel electrode 18.
  • the other transparent substrate 20 is bonded to the transparent substrate 10 thus formed via a sealing material and a spacer (not shown).
  • a transparent electrode 21 is formed on the inner surface of the transparent substrate 20, a transparent electrode 21 is formed.
  • a liquid crystal layer between the transparent electrode 21 and the opposing pixel electrode 18 forms a pixel region G.
  • two divided electrode portions 16 and 17 are formed for each pixel region G, and MIM elements are formed on the divided electrode portions 16 and 17 respectively. Further, the divided electrode portions 16 and 17 are capacitively coupled to each other via the coupling layer 13. Therefore, even if one of the MIM elements has a defect such as a poor junction and a leak occurs at the junction, no charge moves between the split electrodes, so the other split electrode is normal. Works.
  • the potential changes according to the potential of the wiring layer 12 with time due to leakage of the MIM element. And the coupling layer 13 via the oxide film 13a.
  • the defect division can be performed by controlling the potential of the normal divided electrode portion.
  • the potential of the electrode can also be controlled indirectly, making it possible to operate almost normally. is there.
  • the capacitance of the capacitive coupling portion be relatively large in order to suppress display defects at the time of leakage and to ensure normal operation at the time of pattern breakage. It should be set to an appropriate capacity value in relation.
  • the capacitive coupling portion is formed over the entire length of the opposing sides of the two divided electrode portions 16 and 17, the capacitance can be increased, while the capacitance coupling portion is formed via the coupling layer 13. Therefore, the two capacitors are connected in series, so that the capacitance value is smaller than that in the case where they are connected via one insulating layer.
  • the coupling layer 13 made of tantalum exists over the entire length of the opposing side between the divided electrode portions 16 and 17, the gap between the divided electrode portions is optically blocked. Therefore, it is possible to prevent leakage in the pixel and to form the wiring layer 12 at the same time when the wiring layer 12 is manufactured, so that the manufacturing can be performed with almost no change in the manufacturing process.
  • the oxide film 13a is interposed twice between the split electrode portions 16 and 17 via the coupling layer 13, leakage of the capacitance coupling portion due to a pinhole or the like is prevented. The incidence can be reduced.
  • the completed liquid crystal panel is held in the fully lit state or in the half-tone state, and the test is performed to reduce the contrast (normally white).
  • the contrast normally white
  • the transmittance is large and it looks white.
  • the pixel area defects caused by leakage can be found.
  • the MIM element having a poor connection is identified, and the conductive connection between the wiring layer corresponding to the MIM element and the split electrode portion is cut by laser light or the like, thereby forming the above-described pattern. The same state as the cut can be obtained, and the display defect can be eliminated.
  • This embodiment was applied to a normally white transmission type liquid crystal display device, and the transmittance of each pixel in a lighting state was measured.
  • the leakage rate of the MIM element was about 5%, and the occurrence rate of pattern break was less than 1%.
  • the 0 N transmittance of a pixel in which a leak has occurred in one of the MIM elements of the split electrode is about 1.2, where the ON transmittance of a normal pixel is 1, and the ON transmittance after a defective element is cut by laser.
  • the transmittance was about 1.05.
  • the 0 N transmittance of a pixel in which a pattern was cut on one of the divided electrode portions was about 1.05.
  • the incidence of white spot defects was reduced by about 10% after laser correction, and a significant improvement in yield was obtained.
  • the divided electrode portions 16 and 17 are connected to each other by the capacitive coupling portion.
  • the divided electrode portions 16 and 17 have an appropriate resistance value.
  • a resistance layer in place of the bonding layer 13 and the oxide film 13a using a conductive material, it is also possible to obtain substantially the same effect as described above.
  • This resistive layer suppresses the transfer of electric charge between the split electrodes, guarantees the potential control of the split electrode section to which a normal MIM element is connected in the event of a leak, and ensures the potential control from the normal split electrode section when a pattern break occurs. This is because electric potential can be transmitted. If the resistance of the resistive layer is too large and close to the insulator, the pattern will be cut.A display defect will occur in the corrected state after the leak has occurred.If the resistance of the resistive layer is too low, the split electrode on the leak side will be damaged. The appearance makes it difficult to identify.
  • the resistance value of the resistance layer is adjusted to the most preferable resistance value according to the material such as the layer thickness, the layer width, and the alloy composition.
  • the number of the divided electrode portions may be plural, and may be three or more.
  • FIG. 3 shows a case where a pixel electrode 40 in which three divided electrode portions 41, 42, and 43 are capacitively coupled to each other via two coupling layers 33 and 34 is formed in one pixel region G. 3 shows a plane pattern.
  • three MIM elements are formed from the wiring layer 32 to the first electrode portions 32a, 32b, and 32c, an anodic oxide film (not shown), and the second electrode layers 35, 36, and 37. They are connected to the electrode portions 41, 42, 43.
  • the display failure is eliminated by cutting the pattern of the leak portion. It can be operated with little trouble even if there is a break in the power.
  • the intermediate divided electrode portion 42 capacitively coupled to the two divided electrode portions 41 and 43 does not need to be connected to the MIM element from the beginning. In this case, this is equivalent to the case where any part of the MIM element including the first electrode portion 32c and the second electrode layer 36 has a cut pattern.
  • the conductive connection portion between the second electrode layer and the split electrode portion of the MIM element is provided in two places (14a, 14b, 15a, 15b, 3b in FIGS. 1 and 2). Since it is provided at 35a, 35b, 36a, 36b, 37a, 37b) in the figure, it is possible to reduce the possibility of the pattern being cut off at that portion.
  • the conductive connection portions are formed on both sides of the junction of the MIM element, and are provided on both sides near the corners of the split electrode portion. It can be suppressed, and the pixel area is hardly reduced.
  • the second electrode layers 14 and 15 are formed of chromium and have the MIM structure.
  • the second electrode layers are the same as the divided electrode sections 16 and 17. It may be formed soon by IT ⁇ .
  • the second electrode and the pixel electrode can be formed simultaneously in the same step, and the number of steps can be reduced.
  • the description has been given by taking the transmission type liquid crystal display device as an example.
  • the pixel electrode can be formed so as to also serve as a reflective layer.
  • the metal may be a chromium electrode that can be formed integrally with the second electrode layers 14 and 15.
  • each conductor described above can be variously used without being limited to the above example.
  • titanium, molybdenum, aluminum, or the like may be used instead of the chromium.
  • one active element is connected to each divided electrode part of the pixel electrode.
  • the number of active elements connected to the divided electrode part is not limited to one.
  • the active elements described above may be connected in series or in parallel to the divided electrode section.
  • the areas of the divided electrode portions may not be the same as each other, and divided electrode portions having different areas may be provided.
  • the present invention provides a liquid crystal display device having an active element, which can be commercialized without losing the pixel area even when the active element leaks or the pattern is cut. Has been realized.

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  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A liquid crystal display device having active elements of a novel structure that can be fabricated as a finished article without losing pixel regions even in case active elements develop leakage or patterns are cut. Split electrodes (16, 17) are superposed on an oxide film (13a) that is formed on the surface of a coupling layer (13), and they are coupled capacitively through the coupling layer (13) and the oxide film (13a) thereby to constitute a pixel electrode (18) of a unitary structure. MIM elements are connected to the split electrodes (16) and (17). Even in case leakage occurs in the junction portion of either MIM element, the other split electrode properly operates. The same state as when the pattern is cut is established if a defective MIM element is cut off. Even in case the pattern is cut, the split electrodes (16) and (17) are coupled capacitively. Therefore, the potential of the defective split electrode can be indirectly controlled upon controlling the potential of the normal split electrode.

Description

明 細 書 液晶表示装置 技術分野  Description Liquid crystal display device Technical field

本発明は液晶表示装置に係り、 特に、 液晶パネルに形成されたァクテ ィ ブ素子の欠陥を補う技術に関する。 背景技術  The present invention relates to a liquid crystal display device, and particularly to a technique for compensating for a defect of an active element formed on a liquid crystal panel. Background art

従来から、 2枚の基板間に液晶層を介在させて成る液晶パネルに複数 の画素領域を設け、 画素領域毎に T F T (薄膜トランジスタ) や M I M (金属一絶縁体—金属) 素子等のアクティブ (能動) 素子 (例えば非線 型素子) を設けて、 これらのアクティブ素子を介して各画素領域の表示 状態を設定する方法で駆動するタイプの液晶表示装置が製造されている < これらの液晶表示装置は、 例えばアクティブ素子をその非線型性に基づ いて O N / O F F動作させることにより、 ァクティブ素子に接続された、 各画素領域に存在する画素電極に印加する電位を制御し、 液晶層に加わ る電圧を調節して画素領域内の液晶状態を選択する。  Conventionally, a liquid crystal panel with a liquid crystal layer interposed between two substrates is provided with a plurality of pixel areas, and each pixel area has an active (active) element such as a TFT (thin film transistor) or MIM (metal-insulator-metal) element. A liquid crystal display device of a type in which elements (for example, non-linear elements) are provided and driven by a method of setting the display state of each pixel region via these active elements is manufactured. For example, by turning on / off the active element based on its non-linearity, the potential applied to the pixel electrode in each pixel area connected to the active element is controlled, and the voltage applied to the liquid crystal layer is controlled. Is adjusted to select the liquid crystal state in the pixel area.

第 5図には、 アクティブ素子の例として M I M (金属一絶縁体—金属) 素子を備えた液晶表示装置の一方の基板上のパターン形状を示す透視図 である。 基板上にタンタル ( T a ) を被着して成る配線層 2を設け、 配 線層 2には、 画素領域 G毎に第 1電極部 2 aを形成する。 第 1電極部 2 aの表面に陽極酸化処理を施すことにより陽極酸化膜を形成し、 その上 にクロム ( C r ) を被着して成る第 2電極 3を形成する。 この第 2電極 3の先端部に重なるように、 画素領域 Gに対応する透明電極 4を I T 0 (インジウムースズ酸化物) により形成する。 なお、 反射型の液晶表示 装置を構成する場合には、 この透明電極 4を第 2電極 3 と一体のクロム 電極として形成する場合もある。 FIG. 5 is a perspective view showing a pattern shape on one substrate of a liquid crystal display device provided with a MIM (metal-insulator-metal) element as an example of an active element. A wiring layer 2 formed by applying tantalum (Ta) on a substrate is provided, and a first electrode portion 2a is formed in the wiring layer 2 for each pixel region G. Anodizing is performed on the surface of the first electrode portion 2a to form an anodized film, and a second electrode 3 formed by depositing chromium (Cr) thereon is formed. The transparent electrode 4 corresponding to the pixel region G is formed of IT 0 (indium oxide) so as to overlap the tip of the second electrode 3. In addition, reflective liquid crystal display When configuring the device, the transparent electrode 4 may be formed as a chrome electrode integrated with the second electrode 3 in some cases.

このように形成した基板に対して、 もう一方の透明基板に透明電極を 形成し、 シール材及びスぺ一サを介して接合することにより空セルを構 成する。 この空セルに液晶を注入することによって、 液晶パネルが形成 される。 各画素領域に対しては、 配線層 2から、 第 1電極部 2 a、 陽極 酸化膜及び第 2電極 3から成る M I M素子を介して、 透明電極 4に対し て駆動電位の制御が行われる。  An empty cell is formed on the substrate thus formed by forming a transparent electrode on the other transparent substrate and joining the transparent electrode through a sealing material and a spacer. A liquid crystal panel is formed by injecting liquid crystal into these empty cells. For each pixel region, the driving potential of the transparent electrode 4 is controlled from the wiring layer 2 through the MIM element including the first electrode portion 2 a, the anodic oxide film, and the second electrode 3.

上記のような液晶表示装置においては、 画素領域 G毎に形成された M I M素子に欠陥が発生すると、 当該画素領域 Gを駆動することができな くなり、 表示欠陥が発生するという問題点がある。 M I M素子は不安定 な金属一絶縁体接合部を備えているので、 この接合部で不良が発生し易 い上に、 その微細構造に起因して接合部に限らず配線部等のあらゆる場 所において接合部のリーク (短絡) やパターン切れ等が発生する可能性 がある。  In the above-described liquid crystal display device, if a defect occurs in the MIM element formed for each pixel region G, the pixel region G cannot be driven, and a display defect occurs. . Since the MIM element has an unstable metal-insulator junction, it is easy for defects to occur at this junction, and due to its microstructure, not only at the junction but also at any places such as the wiring section In this case, there is a possibility that leakage (short circuit) at the junction and breakage of the pattern may occur.

M I M素子に接合部のリークが発生すると、 第 4図に示すように、 通 常の動作特性 (図中実線) に対して、 電流電圧特性の非線型性が崩れる (図中点線) ため、 配線部 2 と画素電極 4の間の有効な遮断動作ができ なくなる。 また、 パターン切れの場合はそもそも画素電極 4に駆動電位 を供給することが全く不可能になる。  If a junction leak occurs in the MIM element, the non-linearity of the current-voltage characteristic is broken (dotted line in the figure) compared to the normal operating characteristics (solid line in the figure), as shown in Fig. 4. Effective shut-off operation between the part 2 and the pixel electrode 4 cannot be performed. Further, when the pattern is out, it becomes impossible to supply a driving potential to the pixel electrode 4 in the first place.

特に、 近年増加傾向にあるノーマリーホワイ ト夕イブの液晶表示装置 においては、 パターン切れの場合は勿論のこと、 リークの場合において も画素電極に供給された電荷を保持することができなくなるために、 当 該画素領域は白点となる。 この白点は目立っため、 このような不良が一 部にでも発生すると液晶表示装置としては致命的な欠陥となる。  In particular, in a normally white liquid crystal display device, which has been increasing in recent years, the charge supplied to the pixel electrode cannot be held not only when the pattern is cut, but also when a leak occurs. The pixel area becomes a white point. Since such white spots are conspicuous, even if such a defect occurs in any part, it becomes a fatal defect for a liquid crystal display device.

上記のようなァクティ ブ素子の欠陥に起因する表示不良を防止するた めに、 特開平 2— 2 7 1 3 2 3号に記載されているように、 画素電極に 対してァクティブ素子を複数直列に接続する方法がある。 この場合には、 いずれかのァクティ ブ素子にリークが発生しても表示不良とはならない 利点がある。 しかし、 この場合には、 アクティブ素子を直列に接続する ためにパターン構成が複雑になり製造が困難になるとともに、 ァクティ ブ素子及びこれの直列回路部にパターン切れが発生した場合には何ら対 処することができず、 複数のァクティ ブ素子を接続することによりパ夕 ーン切れの危険性は却って増大するという問題点がある。 To prevent display defects due to the defects of the active elements as described above. For example, there is a method of connecting a plurality of active elements in series to a pixel electrode, as described in Japanese Patent Application Laid-Open No. 2-27133. In this case, there is an advantage that a display defect does not occur even if a leak occurs in any of the active elements. However, in this case, since the active element is connected in series, the pattern configuration becomes complicated and manufacturing becomes difficult, and in the case where the active element and its series circuit portion are cut off, any measures are taken. However, there is a problem that the risk of a break in the pattern is increased by connecting a plurality of active elements.

そこで、 本発明は上記問題点を解决するものであり、 アクティ ブ素子 を備えた液晶表示装置において、 アクティブ素子のリークやパターン切 れが発生しても当該画素領域を失うことなく製品化することのできる新 規の構造を実現することにある。 発明の開示  Accordingly, the present invention is to solve the above-mentioned problem, and to provide a liquid crystal display device having an active element without losing the pixel area even if a leak or pattern cut of the active element occurs. The goal is to achieve a new structure that can be implemented. Disclosure of the invention

上記課題を解決するために本発明が講じた手段は、 少なく とも一方が 透光性を有する一対の基板間に液晶層を介在させて、 前記一対の基板の 少なく ともいずれか一方に形成された画素電極に対応した複数の画素領 域を備えた液晶表示装置であって、 前記画素領域毎に、 配線層に導電接 続された複数のァクティブ素子を形成し、 前記画素電極を相互に容量結 合及び/又は抵抗結合した複数の分割電極部に分割して形成して、 前記 ァクティブ素子のそれそれを異なる前記分割電極部に導電接続したこと を特徴とする液晶表示装置である。  Means taken by the present invention to solve the above-mentioned problem is that at least one of the pair of substrates has a liquid crystal layer interposed between a pair of light-transmitting substrates, and is formed on at least one of the pair of substrates. What is claimed is: 1. A liquid crystal display device comprising a plurality of pixel areas corresponding to pixel electrodes, wherein a plurality of active elements conductively connected to a wiring layer are formed for each of the pixel areas, and the pixel electrodes are capacitively connected to each other. A liquid crystal display device comprising: a plurality of divided and / or resistance-coupled divided electrode portions; and each of the active elements is conductively connected to a different one of the divided electrode portions.

こ ό装置によれば、 アクティ ブ素子にリークが発生した場合には、 そ のァクティブ素子に対応する分割電極部による表示状態の制御性が低下 するので、 表示テス トにより不良のアクティブ素子を発見して、 その接 続を絶つことにより、 当該分割電極部は容量結合及び/又は抵抗結合し た分割電極部によって間接的に駆動され、 表示欠陥の発生が防止される。 また、 アクティブ素子若しくはその近傍にパターン切れが発生した場合 には、 パターン切れした分割電極部は容量結合若しくは抵抗結合した分 割電極部によって間接的に駆動され、 表示欠陥の発生が防止される。 なお、 分割電極部の間の結合は容量性の結合部でも抵抗性の結合部で も、 電荷の移動を制限するものであればいずれでも良い。 また、 容量性 と抵抗性の双方を備えた結合状態でも構わない。 According to this device, when a leak occurs in an active element, the controllability of the display state by the divided electrode portion corresponding to the active element is reduced, so that a defective active element is found by a display test. Then, by disconnecting the connection, the divided electrode section is capacitively coupled and / or resistively coupled. It is indirectly driven by the divided electrode portion, thereby preventing the occurrence of display defects. Further, when a pattern break occurs in the active element or in the vicinity thereof, the split electrode portion in which the pattern is cut is indirectly driven by the capacitively or resistively coupled split electrode portion, thereby preventing display defects from occurring. Note that the coupling between the split electrode portions may be any of a capacitive coupling portion and a resistive coupling portion, as long as the movement of charges is restricted. Also, a coupled state having both capacitance and resistance may be used.

ここで、 前記ァクティブ素子を導電体一絶縁体一導電体接合を備えた 非線型素子とする場合がある。 この場合には、 導電体一絶縁体—導電体 接合のリークが発生し易いので、 本発明は特に効果的である。  Here, the active element may be a non-linear element having a conductor-insulator-conductor junction. In this case, the present invention is particularly effective because a leak at the conductor-insulator-conductor junction easily occurs.

この場合にはさらに、 前記分割電極部を容量結合及びノ又は抵抗結合 させる結合部を、 前記 2端子型非線形素子を構成する少なく とも 1の金 属及び/又は絶縁体を用いた容量結合構造で構成することが好ましい。 この場合には、 ァクティブ素子の構造パターンと同一の金属及び/又は 絶縁体を用いることにより、 製造工程を増加させることなく、 容易に形 成することができる。  In this case, the coupling part for capacitively coupling and / or resistance-coupling the divided electrode part is further provided with a capacitive coupling structure using at least one metal and / or insulator constituting the two-terminal nonlinear element. It is preferable to configure. In this case, by using the same metal and / or insulator as the structural pattern of the active element, the element can be easily formed without increasing the number of manufacturing steps.

また、 前記分割電極部を容量結合及びノ又は抵抗結合させる結合部を、 容量結合させる 2つの前記分割電極部に接触する絶縁層と、 当該接触部 に対向する金属層とから形成することが好ましい。 この場合には、 金属 層を介して 2つの分割電極部との間にそれそれコンデンサを構成するこ とができるので、 絶緣層の絶縁不良の発生を抑制することができるとと もに、 絶縁層と金属層の積層構造により製造する上で容易に分割電極部 の間を容量結合させることができる。  Further, it is preferable that a coupling portion for capacitively coupling and / or resistance coupling the divided electrode portion is formed of an insulating layer in contact with the two divided electrode portions for capacitive coupling, and a metal layer opposed to the contact portion. . In this case, a capacitor can be separately formed between the two divided electrode portions via the metal layer, so that the occurrence of insulation failure of the insulating layer can be suppressed and the insulation can be suppressed. Capacitance coupling between the divided electrode portions can be easily performed in the production by the laminated structure of the layer and the metal layer.

さらに、 前記分割電極部を容量結合させる及び/又は抵抗結合させる 結合部を、 前記分割電極部の間の間隙を遮光するように形成することが 好ましい。 この場合には、 分割電極部の間に形成される間隙を結合部が 遮光するため、 画素領域内における光モレを防止することができる。 また、 前記アクティブ素子を、 前記分割電極部の複数箇所において導 電接続させることが望ましい。 この場合には、 アクティブ素子と分割電 極部との間の導電接続の信頼性を向上させることができる。 Further, it is preferable that a coupling portion that capacitively couples and / or resistance-couples the divided electrode portions is formed so as to shield a gap between the divided electrode portions from light. In this case, the gap formed between the divided electrode portions is Since light is shielded, light leakage in the pixel region can be prevented. In addition, it is desirable that the active element be electrically connected at a plurality of locations of the split electrode portion. In this case, the reliability of the conductive connection between the active element and the divided electrode can be improved.

この場合にはさらに、 前記複数箇所を前記分割電極部の角部の両側に 配置することによって、 スペースを大きく とることなく、 充分な接触面 積を確保することができる。 図面の簡単な説明  In this case, by arranging the plurality of locations on both sides of the corner of the split electrode portion, a sufficient contact area can be secured without taking up a large space. BRIEF DESCRIPTION OF THE FIGURES

第 1図は、 本発明に係る液晶表示装置の実施形態における一方の基板 上のパターン構成を示す透視図である。  FIG. 1 is a perspective view showing a pattern configuration on one substrate in an embodiment of a liquid crystal display device according to the present invention.

第 2図は、 同実施形態における断面構造を模式的に示す断面説明図で ある。  FIG. 2 is an explanatory sectional view schematically showing a sectional structure in the embodiment.

第 3図は、 異なる実施形態における一方の基板上のパターン構成を示 す透視図である。  FIG. 3 is a perspective view showing a pattern configuration on one substrate in a different embodiment.

第 4図は、 M I M素子の駆動特性を示すグラフである。  FIG. 4 is a graph showing drive characteristics of the MIM element.

第 5図は、 従来の M I M素子を備えた液晶表示装置の一方の基板上の パターン構成を示す透視図である。 発明を実施するための最良の形態  FIG. 5 is a perspective view showing a pattern configuration on one substrate of a liquid crystal display device provided with a conventional MIM element. BEST MODE FOR CARRYING OUT THE INVENTION

次に、 図面を参照して本発明に係る液晶表示装置の実施形態を説明す る。 第 1図は本発明に係る実施形態の液晶表示装置の一方の透明基板表 面の状態を示す平面説明図 (透視図) であり、 第 2図は、 同実施例の断 面構造を模式的に示す断面構造説明図である。  Next, an embodiment of a liquid crystal display device according to the present invention will be described with reference to the drawings. FIG. 1 is an explanatory plan view (perspective view) showing a state of one transparent substrate surface of a liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional structure of the embodiment. FIG. 4 is an explanatory view of a cross-sectional structure shown in FIG.

以下に、 アクティブ素子の例として、 M I M素子を備えた液晶表示装 置について詳細に説明する。 ガラスから成る透明基板 1 0上には、 タンタル ( T a ) をスパッタ リ ング法により 5 0 0〜 1 0 0 A程度被着して、 熱酸化を施すことにより 酸化夕ン夕ル膜 1 1 を形成する。 この酸化夕ン夕ル膜 1 1は無アル力 リ ガラス製の透明基板 1 0 と後述する配線層との密着性を改善するための ものである。 Hereinafter, a liquid crystal display device including a MIM element will be described in detail as an example of the active element. On a transparent substrate 10 made of glass, tantalum (Ta) is applied to a thickness of about 500 to 100 A by a sputtering method, and is subjected to thermal oxidation to form an oxide film. To form The oxidized film 11 is for improving the adhesion between the transparent substrate 10 made of non-alkali glass and a wiring layer described later.

次に、 酸化タンタル膜 1 1の表面上にスパッ夕 リング法によりタン夕 ルを約 1 2 0 0〜 1 8 0 0 A程度の厚さに被着し、 所定のパターンにパ ターニングして、 配線層 (デ—夕線) 1 2を形成する。 この配線層 1 2 には、 その延長方向に沿って配置された画素領域 G毎に、 延在した 2か 所の第 1電極部 1 2 a, 1 2 bが形成される。 このとき、 上記スパッ夕 リング及びパターニング時において同時に、 タンタルからなる結合層 1 3を形成する。  Next, tantalum is deposited on the surface of the tantalum oxide film 11 to a thickness of about 1200 to 180 A by a sputtering method, and patterned in a predetermined pattern. Wiring layer (Desert line) 12 is formed. In the wiring layer 12, two extended first electrode portions 12a and 12b are formed for each pixel region G arranged along the extension direction. At this time, the bonding layer 13 made of tantalum is formed simultaneously with the above-mentioned sputtering and patterning.

次に、 第 1電極部 1 2 a, 1 2 bに陽極酸化処理を施し、 その表面に 陽極酸化膜 1 2 cを形成する。 また、 島状に形成された結合層 1 3には そのままでは陽極酸化処理を施すことができないので、 結合層 1 3の表 面上には、 熱酸化により酸化膜 1 3 aを形成する。  Next, the first electrode portions 12a and 12b are anodized, and an anodic oxide film 12c is formed on the surface. Further, since anodizing treatment cannot be applied to the bonding layer 13 formed in an island shape as it is, an oxide film 13a is formed on the surface of the bonding layer 13 by thermal oxidation.

この後、 上記透明基板 1 0の熱処理 (ァニール) を窒素などの不活性 ガス中において 3 0 0〜4 5 0 °Cで 2時間程度実施し、 その後、 空気中 にて急冷した。 このように処理した液晶基板 1 0の表面上にクロム ( C r ) をスパッタリ ング法により約 1 0 0 0 A程度の厚さに被着し、 一部 が上記陽極酸化膜 1 2 c上に形成されるようにしてパターニングを行つ て、 第 2電極層 1 4 , 1 5を形成する。  Thereafter, the transparent substrate 10 was heat-treated (annealed) in an inert gas such as nitrogen at 300 to 450 ° C. for about 2 hours, and then rapidly cooled in air. Chromium (Cr) is deposited on the surface of the liquid crystal substrate 10 treated in this manner to a thickness of about 1000 A by sputtering, and a part thereof is formed on the anodic oxide film 12 c. The second electrode layers 14 and 15 are formed by performing patterning as they are formed.

最 に、 I T O (インジウム一スズ酸化物) をスパッタリング法によ り約 5 0 O A程度の厚さに被着し、 パターニングを行って、 上記第 2電 極層 1 4, 1 5に設けられた 2か所の導電接続部 1 4 a, 1 4 b , 1 5 a, 1 5 bの表面上に重なるように画素領域 G毎に形成された画素電極 となる 2つの分割電極部 1 6 , 1 7を設ける。 Finally, ITO (indium tin oxide) was applied to a thickness of about 50 OA by sputtering and patterned to form the second electrode layers 14 and 15. Pixel electrodes formed for each pixel area G so as to overlap the surface of the two conductive connections 14a, 14b, 15a, and 15b Two divided electrode portions 16 and 17 are provided.

ここで、 分割電極部 1 6及び 1 7は、 それぞれ上記結合層 1 3の表面 に形成された酸化膜 1 3 aの上に重なるように形成される。 したがって、 2つの分割電極部 1 6, 1 7は、 結合層 1 3及び酸化膜 1 3 aを介して 容量結合され、 一体の画素電極 1 8を構成する。  Here, the split electrode portions 16 and 17 are formed so as to overlap the oxide film 13a formed on the surface of the bonding layer 13 respectively. Therefore, the two divided electrode portions 16 and 17 are capacitively coupled via the coupling layer 13 and the oxide film 13a to form an integral pixel electrode 18.

このようにして形成された透明基板 1 0に対して、 図示しないシール 材及びスぺ一サを介してもう一方の透明基板 2 0を接合する。 透明基板 2 0の内面上には透明電極 2 1が形成されている。 透明基板 1 0 と 2 0 との間に所定の液晶を注入することにより、 透明電極 2 1 と対向する画 素電極 1 8 との間の液晶層によって画素領域 Gが構成される。  The other transparent substrate 20 is bonded to the transparent substrate 10 thus formed via a sealing material and a spacer (not shown). On the inner surface of the transparent substrate 20, a transparent electrode 21 is formed. By injecting a predetermined liquid crystal between the transparent substrates 10 and 20, a liquid crystal layer between the transparent electrode 21 and the opposing pixel electrode 18 forms a pixel region G.

本実施形態においては、 画素領域 G毎に 2つの分割電極部 1 6 , 1 7 が形成され、 この分割電極部 1 6, 1 7にそれそれ M I M素子が形成さ れている。 また、 分割電極部 1 6 と 1 7は相互に結合層 1 3を介して容 量結合している。 したがって、 仮にいずれか一方の M I M素子が接合不 良等の欠陥を持ち、 接合部にリークが生じても、 分割電極部の間に電荷 の移動は生じないので、 もう一方の分割電極部は正常に動作する。  In the present embodiment, two divided electrode portions 16 and 17 are formed for each pixel region G, and MIM elements are formed on the divided electrode portions 16 and 17 respectively. Further, the divided electrode portions 16 and 17 are capacitively coupled to each other via the coupling layer 13. Therefore, even if one of the MIM elements has a defect such as a poor junction and a leak occurs at the junction, no charge moves between the split electrodes, so the other split electrode is normal. Works.

一方、 不良の M I M素子が接続されている分割電極部では、 M I M素 子のリークにより時間と伴に電位が配線層 1 2の電位に従って変化する < この変化速度は分割電極部 1 6, 1 7と結合層 1 3との酸化膜 1 3 aを 介した容量結合の静電容量に依存する。  On the other hand, in the divided electrode section to which the defective MIM element is connected, the potential changes according to the potential of the wiring layer 12 with time due to leakage of the MIM element. And the coupling layer 13 via the oxide film 13a.

配線層 1 2と分割電極部 1 6 , 1 7のいずれかとの間にパターン切れ が発生した場合には、 パターン切れの発生した当該分割電極部には駆動 電位を供給することができなくなる。 しかし、 2つの分割電極部 1 6 と 1 7は上記結合層 1 3及び酸化膜 1 3 aを介して容量結合しているので、 正常な分割電極部の電位を制御することにより、 不良の分割電極部の電 位も間接的に制御することができ、 ほぼ正常に動作させることが可能で ある。 If a pattern break occurs between the wiring layer 12 and one of the divided electrode sections 16 and 17, it becomes impossible to supply a drive potential to the divided electrode section where the pattern break has occurred. However, since the two divided electrode portions 16 and 17 are capacitively coupled via the coupling layer 13 and the oxide film 13a, the defect division can be performed by controlling the potential of the normal divided electrode portion. The potential of the electrode can also be controlled indirectly, making it possible to operate almost normally. is there.

この場合、 リーク発生時の表示不良の抑制やパターン切れ発生時の正 常動作の確保のためには容量結合部の静電容量は比較的大きい方が好ま しいが、 液晶容量や書き込み時間との関係で適度な容量値に設定される べきである。 本実施形態では、 2つの分割電極部 1 6 と 1 7の対向辺の 全長に亘つて容量結合部が形成されているため、 静電容量を大きく とる ことができる一方、 結合層 1 3を介して 2つのコンデンサが直列接続さ れていることとなるため、 1枚の絶縁層を介して結合している場合と較 ベて容量値は小さくなる。  In this case, it is preferable that the capacitance of the capacitive coupling portion be relatively large in order to suppress display defects at the time of leakage and to ensure normal operation at the time of pattern breakage. It should be set to an appropriate capacity value in relation. In the present embodiment, since the capacitive coupling portion is formed over the entire length of the opposing sides of the two divided electrode portions 16 and 17, the capacitance can be increased, while the capacitance coupling portion is formed via the coupling layer 13. Therefore, the two capacitors are connected in series, so that the capacitance value is smaller than that in the case where they are connected via one insulating layer.

また、 分割電極部 1 6と 1 7の間の対向辺の全長に亘つてタンタルで 形成された結合層 1 3が存在しているため、 分割電極部の間の間隙を光 学的に遮断することができるから、 画素内のモレを防止できるとともに、 配線層 1 2の製造時に同時に形成することができるので、 製造工程を殆 ど変えずに製造できる。  Also, since the coupling layer 13 made of tantalum exists over the entire length of the opposing side between the divided electrode portions 16 and 17, the gap between the divided electrode portions is optically blocked. Therefore, it is possible to prevent leakage in the pixel and to form the wiring layer 12 at the same time when the wiring layer 12 is manufactured, so that the manufacturing can be performed with almost no change in the manufacturing process.

また、 分割電極部 1 6 と 1 7との間には結合層 1 3を介して酸化膜 1 3 aを 2回介在させているため、 ピンホール等の原因による当該容量結 合部のリークの発生率を低減することができる。  In addition, since the oxide film 13a is interposed twice between the split electrode portions 16 and 17 via the coupling layer 13, leakage of the capacitance coupling portion due to a pinhole or the like is prevented. The incidence can be reduced.

一方の M I M素子にリークが発生している場合には、 完成した液晶パ ネルを全灯状態若しくは中間調状態に保持してテス トを実施し、 コン ト ラス トの低下した (ノーマリーホワイ ト型の表示体の場合には透過率が 大きく、 白く見える) 画素領域を特定することにより、 リークに起因す る欠陥を発見することができる。 欠陥の発生した画素領域においては、 接合不良の M I M素子を特定し、 この M I M素子に対応する配線層と分 割電極部との間の導電接続をレーザ光等により切断することによって、 上述のパターン切れと同様の状態とすることができ、 表示不良を解消す ることができる。 本実施例をノーマリーホワイ ト型の透過型液晶表示装置に採用して点 灯状態における各画素の透過率を測定した。 この結果、 M I M素子のリ —ク発生率は約 5 %、 パターン切れの発生率は 1 %以下であった。 分割 電極部の一方の M I M素子にリークの発生した画素の 0 N透過率は、 正 常画素の O N透過率を 1 とすると、 1 . 2程度であり、 不良素子をレー ザ切断した後の O N透過率は 1 . 0 5程度となった。 また、 分割電極部 の一方にパターン切れの発生した画素の 0 N透過率は 1 . 0 5程度であ つた。 このようにした結果、 白点欠陥の発生率は、 レーザ修正後には約 1 0 %も低減され、 著しい歩留りの向上が得られた。 If a leak occurs in one of the MIM elements, the completed liquid crystal panel is held in the fully lit state or in the half-tone state, and the test is performed to reduce the contrast (normally white). (In the case of a type display, the transmittance is large and it looks white.) By specifying the pixel area, defects caused by leakage can be found. In the pixel region where a defect has occurred, the MIM element having a poor connection is identified, and the conductive connection between the wiring layer corresponding to the MIM element and the split electrode portion is cut by laser light or the like, thereby forming the above-described pattern. The same state as the cut can be obtained, and the display defect can be eliminated. This embodiment was applied to a normally white transmission type liquid crystal display device, and the transmittance of each pixel in a lighting state was measured. As a result, the leakage rate of the MIM element was about 5%, and the occurrence rate of pattern break was less than 1%. The 0 N transmittance of a pixel in which a leak has occurred in one of the MIM elements of the split electrode is about 1.2, where the ON transmittance of a normal pixel is 1, and the ON transmittance after a defective element is cut by laser. The transmittance was about 1.05. Further, the 0 N transmittance of a pixel in which a pattern was cut on one of the divided electrode portions was about 1.05. As a result, the incidence of white spot defects was reduced by about 10% after laser correction, and a significant improvement in yield was obtained.

上記実施形態では、 分割電極部 1 6, 1 7を相互に容量性の結合部に よって接続しているが、 酸化膜 1 3 aのような絶縁層を設けることなく、 適度な抵抗値を備えた導電性材料で結合層 1 3及び酸化膜 1 3 aの代わ りになる抵抗層を形成することにより、 上記とほぼ同様の効果を得るこ とも可能である。  In the above embodiment, the divided electrode portions 16 and 17 are connected to each other by the capacitive coupling portion. However, without providing an insulating layer such as the oxide film 13a, the divided electrode portions 16 and 17 have an appropriate resistance value. By forming a resistance layer in place of the bonding layer 13 and the oxide film 13a using a conductive material, it is also possible to obtain substantially the same effect as described above.

この抵抗層は分割電極間の電荷の移動を抑制して、 リーク発生時には 正常な M I M素子が接続された分割電極部の電位制御を保証し、 パター ン切れの発生時には正常な分割電極部からの電位の伝達を可能にするか らである。 抵抗層の抵抗値が大き過ぎて絶縁体に近くなるとパターン切 れゃリーク発生後の修正後の状態で表示不良が発生し、 抵抗層の抵抗値 が小さすぎると、 リーク発生側の分割電極を見掛けにより特定すること が困難になる。 また、 抵抗値が小さすぎる場合には M I M素子の素子特 性に対する許容幅が低下し、 リークの程度の小さい M I M素子に接続さ れた分割電極部を備えた画素についても、 正常な分割電極部への影響が 大きくなり、 修正する画素数が増大するという欠点がある。 したがって、 抵抗層の抵抗値は、 その層厚、 層幅、 及び合金組成等の材質に応じて最 も好ましい抵抗値に調整される。 分割電極部の数は複数であればよく、 3以上でもよい。 第 3図は、 一 つの画素領域 G内に、 3つの分割電極部 4 1 , 42 , 43を 2つの結合 層 33, 34を介して相互に容量結合させた画素電極 40を形成した場 合の平面パターンを示す。 この場合には、 配線層 32から第 1電極部 3 2 a, 32 b, 32 c、 図示しない陽極酸化膜、 第 2電極層 35, 36, 37により 3つの M I M素子が形成され、 それそれ分割電極部 4 1 , 4 2 , 43に接続されている。 This resistive layer suppresses the transfer of electric charge between the split electrodes, guarantees the potential control of the split electrode section to which a normal MIM element is connected in the event of a leak, and ensures the potential control from the normal split electrode section when a pattern break occurs. This is because electric potential can be transmitted. If the resistance of the resistive layer is too large and close to the insulator, the pattern will be cut.A display defect will occur in the corrected state after the leak has occurred.If the resistance of the resistive layer is too low, the split electrode on the leak side will be damaged. The appearance makes it difficult to identify. If the resistance value is too small, the allowable width for the element characteristics of the MIM element is reduced, and the pixel having the divided electrode section connected to the MIM element having a small leakage level has a normal divided electrode section. The effect is that the effect on the image becomes large and the number of pixels to be corrected increases. Therefore, the resistance value of the resistance layer is adjusted to the most preferable resistance value according to the material such as the layer thickness, the layer width, and the alloy composition. The number of the divided electrode portions may be plural, and may be three or more. FIG. 3 shows a case where a pixel electrode 40 in which three divided electrode portions 41, 42, and 43 are capacitively coupled to each other via two coupling layers 33 and 34 is formed in one pixel region G. 3 shows a plane pattern. In this case, three MIM elements are formed from the wiring layer 32 to the first electrode portions 32a, 32b, and 32c, an anodic oxide film (not shown), and the second electrode layers 35, 36, and 37. They are connected to the electrode portions 41, 42, 43.

この場合にも、 前記の実施形態と同様に、 いずれか一つ若しくはいず れか 2つの M I M素子にリーク又はパターン切れが発生しても、 リーク 部分のパターンの切断により表示不良を解消することができ、 又はパ夕 ーン切れがあっても殆ど支障なく動作させることができる。  In this case, as in the above-described embodiment, even if any one or any two of the MIM elements leak or the pattern is cut, the display failure is eliminated by cutting the pattern of the leak portion. It can be operated with little trouble even if there is a break in the power.

ここで、 3つの分割電極部のうち、 2つの分割電極部 4 1と 43に容 量結合されている中間の分割電極部 42については、 当初から M I M素 子を接続しなくてもよい。 この場合には、 第 1電極部 32 cと第 2電極 層 36からなる M I M素子のいずれかの部分がパターン切れしている場 合と同等になるからである。  Here, of the three divided electrode portions, the intermediate divided electrode portion 42 capacitively coupled to the two divided electrode portions 41 and 43 does not need to be connected to the MIM element from the beginning. In this case, this is equivalent to the case where any part of the MIM element including the first electrode portion 32c and the second electrode layer 36 has a cut pattern.

本実施形態では、 M I M素子の第 2電極層と分割電極部との導電接続 部を 2か所 (第 1図及び第 2図における 14 a, 14 b, 1 5 a, 1 5 b、 第 3図における 35 a, 35 b, 36 a, 36 b, 37 a, 37 b) に設けているため、 当該部分のパターン切れの可能性を低減することが できる。 この場合、 導電接続部は M I M素子の接合部の両側に形成され、 しかも、 分割電極部の角部近傍の両側に設けられているため、 このよう な構造にしてもスペースの増加を最小限に抑制することができ、 画素面 積を殆ど縮小させることがない。  In the present embodiment, the conductive connection portion between the second electrode layer and the split electrode portion of the MIM element is provided in two places (14a, 14b, 15a, 15b, 3b in FIGS. 1 and 2). Since it is provided at 35a, 35b, 36a, 36b, 37a, 37b) in the figure, it is possible to reduce the possibility of the pattern being cut off at that portion. In this case, the conductive connection portions are formed on both sides of the junction of the MIM element, and are provided on both sides near the corners of the split electrode portion. It can be suppressed, and the pixel area is hardly reduced.

なお、 上記実施形態においては、 第 2電極層 14、 1 5をクロムによ り形成し M I M構造としたが、 第 2電極層を分割電極部 1 6、 1 7と同 じく I T◦により形成してもよい。 この場合は、 第 2電極と画素電極を 同一の工程により同時に形成でき、 工程数の削減を図ることができる。 また、 上記実施形態においては、 透過型の液晶表示装置を例として説 明を行ったが、 反射型の液晶表示装置においては、 透明な分割電極部 1 6 , 1 7の代わりに、 他の金属を用い、 画素電極を反射層を兼ねたもの として形成することができる。 この場合、 当該金属としては、 上記第 2 電極層 1 4, 1 5 と一体に形成できるクロム電極とすることも ^能であ る。 In the above embodiment, the second electrode layers 14 and 15 are formed of chromium and have the MIM structure. However, the second electrode layers are the same as the divided electrode sections 16 and 17. It may be formed soon by IT◦. In this case, the second electrode and the pixel electrode can be formed simultaneously in the same step, and the number of steps can be reduced. Further, in the above-described embodiment, the description has been given by taking the transmission type liquid crystal display device as an example. The pixel electrode can be formed so as to also serve as a reflective layer. In this case, the metal may be a chromium electrode that can be formed integrally with the second electrode layers 14 and 15.

また、 上記各導電体の材質は上記例に限定されることなく種々用いる ことができ、 例えば上記タンタルの代わりにタンタルを主成分としニォ ブ、 タングステン、 アルミニウム、 モリブデン等を添加した合金を用い てもよく、 さらに、 上記クロムの代わりにチタン、 モリブデン、 アルミ 二ゥム等を用いても良い。  In addition, the material of each conductor described above can be variously used without being limited to the above example. Further, titanium, molybdenum, aluminum, or the like may be used instead of the chromium.

なお、 上記実施形態においては、 画素電極の各分割電極部に一つずつ アクティブ素子を接続しているが、 分割電極部に接続されるアクティ ブ 素子は 1つに限定されることなく、 例えば複数のァクティブ素子を分割 電極部に対して直列若しくは並列に接続しても良い。 また、 分割電極部 の面積は相互に同一でなく とも良く、 異なった面積を持つ分割電極部を 設けても良い。  In the above embodiment, one active element is connected to each divided electrode part of the pixel electrode. However, the number of active elements connected to the divided electrode part is not limited to one. The active elements described above may be connected in series or in parallel to the divided electrode section. The areas of the divided electrode portions may not be the same as each other, and divided electrode portions having different areas may be provided.

さらに、 上記実施形態では、 最も単純な複数の分割電極部を並列させ た例のみを示したが、 例えば、 各分割電極部の重心位置がそれそれ画素 領域の略中央部に来るように、 同心円状や同心角形状に複数の分割電極 部を設けることも可能である。 この場合には、 パターン切れの発生した 画素やレーザ切断した画素と正常な画素との見かけの差を低減すること ができる。  Further, in the above-described embodiment, only an example in which a plurality of simplest divided electrode portions are arranged in parallel has been described. It is also possible to provide a plurality of divided electrode portions in a shape or concentric angle shape. In this case, it is possible to reduce the apparent difference between the pixel in which the pattern is cut or the laser-cut pixel and the normal pixel.

産業上の利用可能性 以上のように、 本発明は、 アクティ ブ素子を備えた液晶表示装置にお いて、 ァクティ ブ素子のリークやパターン切れが発生しても当該画素領 域を失うことなく製品化を可能とする構造を実現している。 Industrial applicability As described above, the present invention provides a liquid crystal display device having an active element, which can be commercialized without losing the pixel area even when the active element leaks or the pattern is cut. Has been realized.

Claims

請 求 の 範 囲 The scope of the claims 1 . 少なく とも一方が透光性を有する一対の基板間に液晶層を介在させ て、 前記一対の基板の少なく ともいずれか一方に形成された画素電極に 対応した複数の画素領域を備えた液晶表示装置であって、 前記画素領域 毎に、 配線層に導電接続された複数のアクティ ブ素子を形成し、 前記画 素電極を相互に容量結合及び/又は抵抗結合した複数の分割電極部に分 割して形成して、 前記ァクティブ素子のそれそれを異なる前記分割電極 部に導電接続したことを特徴とする液晶表示装置。 1. A liquid crystal having a plurality of pixel regions corresponding to pixel electrodes formed on at least one of the pair of substrates, with a liquid crystal layer interposed between a pair of substrates having at least one of which has a light-transmitting property. In a display device, a plurality of active elements conductively connected to a wiring layer are formed for each of the pixel regions, and the pixel electrodes are divided into a plurality of divided electrode portions that are capacitively and / or resistively coupled to each other. A liquid crystal display device, wherein the liquid crystal display device is formed by dividing and electrically connecting each of the active elements to the different one of the divided electrode portions. 2 . 請求の範囲第 1項において、 前記アクティブ素子は導電体一絶縁体 一導電体接合を備えた 2端子型非線型素子であることを特徴とする液晶 表示装置。 2. The liquid crystal display device according to claim 1, wherein the active element is a two-terminal non-linear element having a conductor-insulator-conductor junction. 3 . 請求の範囲第 2項において、 前記分割電極部を容量結合及び/又は 抵抗結合させる結合部は、 前記 2端子型非線形素子を構成する少なく と も 1の金属及び/又は絶縁体を用いた容量結合構造を備えていることを 特徴とする液晶表示装置。  3. The method according to claim 2, wherein at least one metal and / or insulator constituting the two-terminal nonlinear element is used as the coupling part for capacitively coupling and / or resistance coupling the divided electrode part. A liquid crystal display device having a capacitive coupling structure. 4 . 請求の範囲第 1項において、 前記分割電極部を容量結合及び/又は 抵抗結合させる結合部は、 容量結合させる 2つの前記分割電極部に接触 する絶縁層と、 当該接触部に対向する金属層とから成ることを特徵とす る液晶表示装置。  4. In Claim 1, the coupling part that capacitively and / or resistanceally couples the divided electrode part is an insulating layer that is in contact with the two divided electrode parts that is capacitively coupled, and a metal that faces the contact part. A liquid crystal display device characterized by comprising a layer. 5 . 請求の範囲第 1項において、 前記分割電極部を容量結合及び/又は 抵抗結合させる結合部は、 前記分割電極部の間の間隙を遮光するように 形成されていることを特徴とする液晶表示装置。  5. The liquid crystal according to claim 1, wherein the coupling portion for capacitively coupling and / or resistance coupling the divided electrode portion is formed so as to shield a gap between the divided electrode portions from light. Display device. 6 . 請求の範囲第 1項乃至第 3項のいずれかにおいて、 前記アクティ ブ 素子は、 前記分割電極部の複数箇所において導電接続していることを特 徴とする液晶表示装置。 6. The liquid crystal display device according to any one of claims 1 to 3, wherein the active element is conductively connected at a plurality of portions of the split electrode portion. 7 . 請求の範囲第 6項において、 前記複数箇所は前記分割電極部の角部 の両側に配置されていることを特徴とする液晶表示装置。 7. The liquid crystal display device according to claim 6, wherein the plurality of portions are arranged on both sides of a corner of the divided electrode portion.
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TW475085B (en) 2002-02-01
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CN1111757C (en) 2003-06-18
CN1190471A (en) 1998-08-12
JP3343739B2 (en) 2002-11-11

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