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WO1996021251B1 - Dispositif porteur minoritaire - Google Patents

Dispositif porteur minoritaire

Info

Publication number
WO1996021251B1
WO1996021251B1 PCT/US1996/000202 US9600202W WO9621251B1 WO 1996021251 B1 WO1996021251 B1 WO 1996021251B1 US 9600202 W US9600202 W US 9600202W WO 9621251 B1 WO9621251 B1 WO 9621251B1
Authority
WO
WIPO (PCT)
Prior art keywords
junction
type
chalcogenide component
minority carrier
component includes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1996/000202
Other languages
English (en)
Other versions
WO1996021251A1 (fr
Filing date
Publication date
Application filed filed Critical
Priority to AU46950/96A priority Critical patent/AU4695096A/en
Publication of WO1996021251A1 publication Critical patent/WO1996021251A1/fr
Publication of WO1996021251B1 publication Critical patent/WO1996021251B1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Abstract

Un dispositif porteur minoritaire comprend au moins une jonction d'au moins deux matériaux dissemblables, dont au moins un est un semi-conducteur et une couche de passivation sur au moins une surface du dispositif. La couche de passivation comprend un élément du groupe 13 et un composé du type chalcogénure. Parmi les formes d'exécution des porteurs minoritaires, on peut citer, par exemple, les diodes laser, les diodes émettrices de lumière, les transistors à hétérojonction bipolaire et les cellules solaires.
PCT/US1996/000202 1995-01-06 1996-01-05 Dispositif porteur minoritaire Ceased WO1996021251A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU46950/96A AU4695096A (en) 1995-01-06 1996-01-05 Minority carrier device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36934695A 1995-01-06 1995-01-06
US08/369,346 1995-01-06

Publications (2)

Publication Number Publication Date
WO1996021251A1 WO1996021251A1 (fr) 1996-07-11
WO1996021251B1 true WO1996021251B1 (fr) 1996-09-06

Family

ID=23455085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/000202 Ceased WO1996021251A1 (fr) 1995-01-06 1996-01-05 Dispositif porteur minoritaire

Country Status (3)

Country Link
US (1) US6008525A (fr)
AU (1) AU4695096A (fr)
WO (1) WO1996021251A1 (fr)

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US7286585B2 (en) 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
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US7112545B1 (en) 1999-09-10 2006-09-26 The Board Of Trustees Of The University Of Arkansas Passivation of material using ultra-fast pulsed laser
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EP1759425A2 (fr) * 2004-06-25 2007-03-07 Dublin City University Dispositif electroluminescent destine a la production d'un rayonnement ultraviolet
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (fr) 2004-10-01 2006-04-13 Finisar Corporation Laser a cavite verticale et a emission par la surface possedant plusieurs contacts superieurs
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US7491599B2 (en) * 2005-12-09 2009-02-17 Macronix International Co., Ltd. Gated diode nonvolatile memory process
US7283389B2 (en) * 2005-12-09 2007-10-16 Macronix International Co., Ltd. Gated diode nonvolatile memory cell array
CN101388394B (zh) * 2006-11-20 2010-12-29 旺宏电子股份有限公司 垂直非易失存储单元、阵列及其操作方法
DE102007062050B4 (de) * 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
US7995384B2 (en) 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102099195B1 (ko) * 2013-09-27 2020-04-09 인텔 코포레이션 다층형 순응성 기판들을 갖는 비-평면형 반도체 디바이스들
US10644210B2 (en) * 2016-04-01 2020-05-05 Nichia Corporation Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member

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