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WO1996021251B1 - Minority carrier device - Google Patents

Minority carrier device

Info

Publication number
WO1996021251B1
WO1996021251B1 PCT/US1996/000202 US9600202W WO9621251B1 WO 1996021251 B1 WO1996021251 B1 WO 1996021251B1 US 9600202 W US9600202 W US 9600202W WO 9621251 B1 WO9621251 B1 WO 9621251B1
Authority
WO
WIPO (PCT)
Prior art keywords
junction
type
chalcogenide component
minority carrier
component includes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1996/000202
Other languages
French (fr)
Other versions
WO1996021251A1 (en
Filing date
Publication date
Application filed filed Critical
Priority to AU46950/96A priority Critical patent/AU4695096A/en
Publication of WO1996021251A1 publication Critical patent/WO1996021251A1/en
Publication of WO1996021251B1 publication Critical patent/WO1996021251B1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Abstract

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Claims

AMENDED CLAIMS [received by the International Bureau on 26 June 1996 (26.06.96); original claim 1 amended; remaining claims unchanged (2 pages)]
1. A minority carrier device, comprising:
a) at least one junction of at least two dissimilar materials, at least one of which is a semiconductor; and
b) a passivating layer formed by metal-organic
chemical vapor phase deposition on at least one surface of the device, said passivating layer including a Group 13 element and a chalcogenide component.
2. The device of Claim 1, wherein the junction is a pn junction.
3. The device of Claim 2, wherein the pn junction is a homojunction.
4. The device of Claim 2, wherein the pn junction is a heterojunction.
5. The device of Claim 1, wherein the junction is a
Schottky barrier.
6. The device of Claim 1, wherein the junction is a p- type/intrinsically doped/n-type junction.
7. The device of Claim 1, wherein the junction is a p- type/insulating layer/n-type junction.
8. The device of Claim 1, wherein the junction is a
heterojunction.
9. The device of Claim 1, wherein the chalcogenide component includes sulfur.
10. The device of Claim 1, wherein the chalcogenide
component includes selenium.
11. The device of Claim 1, wherein the chalcogenide
component includes tellurium.
12. The device of Claim 1, wherein the device is a laser diode.
13. The device of Claim 1, wherein the device is a light emitting diode.
14. The device of Claim 1, wherein the device is a
heterojunction bipolar transistor.
15. The device of Claim 1, wherein the device is a solar cell.
PCT/US1996/000202 1995-01-06 1996-01-05 Minority carrier device Ceased WO1996021251A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU46950/96A AU4695096A (en) 1995-01-06 1996-01-05 Minority carrier device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36934695A 1995-01-06 1995-01-06
US08/369,346 1995-01-06

Publications (2)

Publication Number Publication Date
WO1996021251A1 WO1996021251A1 (en) 1996-07-11
WO1996021251B1 true WO1996021251B1 (en) 1996-09-06

Family

ID=23455085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/000202 Ceased WO1996021251A1 (en) 1995-01-06 1996-01-05 Minority carrier device

Country Status (3)

Country Link
US (1) US6008525A (en)
AU (1) AU4695096A (en)
WO (1) WO1996021251A1 (en)

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