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WO1996012389A9 - Appareil destine a deposer une couche de matiere sur un substrat - Google Patents

Appareil destine a deposer une couche de matiere sur un substrat

Info

Publication number
WO1996012389A9
WO1996012389A9 PCT/US1995/013585 US9513585W WO9612389A9 WO 1996012389 A9 WO1996012389 A9 WO 1996012389A9 US 9513585 W US9513585 W US 9513585W WO 9612389 A9 WO9612389 A9 WO 9612389A9
Authority
WO
WIPO (PCT)
Prior art keywords
laser beam
target
target material
plume
travel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1995/013585
Other languages
English (en)
Other versions
WO1996012389A1 (fr
Filing date
Publication date
Application filed filed Critical
Priority to AU41948/96A priority Critical patent/AU4194896A/en
Publication of WO1996012389A1 publication Critical patent/WO1996012389A1/fr
Publication of WO1996012389A9 publication Critical patent/WO1996012389A9/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Definitions

  • This invention relates to an apparatus for depositing a layer of material on a substrate, in particular, a layer such as hard diamond-like material comprising carbon and/or carbon bonded to any one or more species of boron, nitrogen or hydroge .
  • Diamond and "diamond-like" materials are of particular interest for use as protective coatings because these materials have a hardness of 10 or nearly 10 compared with sapphire's hardness of 9. Diamond, while harder than sapphire, is far more expensive, and thus its use has been limited.
  • PLD pulsed laser deposition
  • U.S. Patent No. 4,987,007 to Wagal et al. discloses one method of depositing DLC films using PLD. .An accelerating grid spaced from a graphite target is charged to a negative potential and is used to separate carbon ions from a plume. Thus, the grid is charged to an opposite potential than the carbon ions so as to attract the ions. While the teachings of the Wagal et al. patent may provide satisfactory results in some applications,there is a need to deposit a higher quality film than can be achieved using the Wagal et al. method. The Wagal et al. patent suggests that a higher growth rate and a -quality film may be achieved by using a higher energy laser than is disclosed in the Wagal et al. patent. These higher energy lasers are costly, however.
  • a method and apparatus for depositing high quality coatings of conventional and new materials on a substrate by a pulsed laser deposition process that includes the capacitive coupling of energy.
  • the apparatus in accordance with the present innovation includes a pulsed evaporation means such as a pulsed electron/ion beam or a pulsed laser beam directed to impinge on a solid carbon target. When properly focused, these pulsed sources provide very high power at the focal point, evaporating the carbon or carbon composite and forming a plume.
  • a capacitor stationed outside the vacuum chamber is discharged through a graphite ring placed between the target and the substrate. The energy stored in the capacitor is released in synchronization with the pulsed evaporation source and is applied to the plume. The energy coupled to the material plume is given by 1
  • Fig. 1 is a diagrammatic view of the augmented pulsed laser disposition apparatus of the present invention
  • Fig. 2 is detailed illustration of the scanning device used in the present invention.
  • Fig. 3 illustrates the placement of the ring electrode and its relation to the target and lens of the present invention
  • Fig. 4 is a graph comparing the absorption spectra of a sapphire sample with a diamond-like coating produced with the apparatus of the present invention, and a sapphire sample without the coating;
  • Fig. 5 is a graph comparing the absorption spectra of a thicker sapphire sample with a diamond-like coating produced with the apparatus of the present invention, and a sapphire sample without the coating;
  • Fig. 6A-6B are graphs of the transmission of sapphire with and without the diamond-like coating.
  • Fig. l illustrates the preferred embodiment of the augmented pulsed laser deposition apparatus of the present invention.
  • a vacuum chamber 1 is provided, preferably sustaining a pressure of 10"*Torr.
  • a pulsed laser 2 preferably a pulsed Q-switched Nd:YAG laser Surelite 11-10 model from Continuum, is positioned outside the vacuum chamber 1, and emits a pulsed beam 3.
  • a source producing a pulsed electron/ion beam may be used.
  • the pulsed beam 3 enters an optical device 4, such as a cross post adaptor from Newport, model CA-1, which prevents the formation of an elliptical focused spot at the carbon target 12.
  • the beam then enters the vacuum chamber through a quartz window 5 mounted to a feedthrough collar 6. Once the laser beam 3 has entered the vacuum chamber
  • a mirror 7a shown in Fig. 2
  • the scanning device 10 contains a lens 8, such as a CVI PLCX-25-4/773-UV- AR/AR1064, to focus the laser beam 3 and a ring electrode 9.
  • the focused laser beam 11 emerges from the scanning device and strikes a high purity carbon target 12 which may be obtained from Goodfellow.
  • the lens 8 is positioned in the laser beam to assure that a minimum focused spot of the laser beam strikes the face of the carbon target 12. Striking the carbon target with the laser beam 11 causes carbon vaporization and forms a plume of material 18.
  • the plume of vaporized material 18 created by the laser pulse emerges from the carbon target 12 at normal incidence to the face of the target 12. Material including carbon atoms and ions pass from the face of the carbon target 12, through the ring electrode 9 and collect on the substrate 19 with the ring electrode 9 applying energy to the plume 18.
  • a high voltage power supply 13 connected in parallel to a high voltage capacitor 14 and charging the capacitor 14 to a voltage in the range of 0.5-3.0KV.
  • the capacitor 14, preferably 0.1-0.5 ⁇ f, is connected in series between the carbon target 12 and ring electrode 9 by high voltage feedthroughs 15 and flexible conductors 16.
  • the polarity of the ring electrode 9 is maintained at positive high voltage while the carbon target 12 is negative in polarity.
  • the capacitor 14 discharges the instant the plume 18 is formed during a laser pulse since the plume 18, in effect, completes the circuit and provides a path for the capacitor 14 to discharge.
  • no special trigger circuitry is needed due to the manner in which the circuit elements are arranged.
  • the resulting discharge of energy into the plume 18 increases ionization and dramatically increases the diameter of the plume and area of the film that can be deposited.
  • the additional energy from the capacitor 14 excites carbon atoms to much higher energy states than if the capacitor 14 was not used. This results in uniform, large area films with improved adherence to the substrate 19.
  • the capacitive augmentation reduces the need for higher power lasers and hence the associated cost.
  • the power density present in the focused spot of the laser beam can severely erode the carbon target 12 in a short period of time. Not only is the carbon target 12 damaged but the quality of the DLC film can be compromised as well.
  • a method and apparatus that moves the carbon target 12 and simultaneously scans the laser beam 11 thus changing the location on the carbon target 12 where the laser beam 11 is focused has been devised as a solution to this problem.
  • the carbon target 12 is moved horizontally using a motorized linear actuator 17, such as a model VF-165-2 from Huntington Mechanical Lab, mounted to the feedthrough collar 6 and extending into the chamber l.
  • the carbon target 12, mounted at the end of the linear actuator 17, moves in the direction indicated by the arrow Al.
  • Damage to the carbon target 12 is further reduced by a scanning device 10 that moves the focused laser beam vertically. Details of the scanning device 10 are shown in Fig. 2 & 3.
  • the laser beam 3 enters the chamber via a quartz window 5 and is turned 90 degrees by a stationary mirror 7a, such as a CVI Yl-1025-45, fixed to the chamber baseplate 20.
  • a second mirror 7b such as a CVI Yl- 1025-45, redirects the laser beam so that it passes through the lens 8.
  • the mirror 7b, ring electrode 9 and lens 8 are mounted on a bracket 21 that is attached to the shaft of a second motorized linear actuator 22 fixed to the chamber baseplate 20. As the motorized linear actuator 22 is operated, the distance between mirrors 7a and 7b changes depending on the direction of motion of the actuator 22. This results in a corresponding change in the position of the focused laser beam 11 emerging from the scanning device 7.
  • Fig. 3 shows a top view of scanning device 10 in more detail.
  • the combined motion of both linear actuators results in the focused laser beam 11 scanning the carbon target 12 in a raster pattern.
  • the focused laser beam 11 is constantly moved via scanning device 10 while the carbon target 12 is periodically advanced as the laser beam 11 reaches its lowest or highest point of travel.
  • the continuously moving plume 18 created by the capacitively augmented PLD yields hard, uniform DLC films on substrates of large areas.
  • Figs. 4 and 5 graphically compare the absorption spectrum of a sapphire sample coated using the apparatus of the present invention with that of an uncoated sapphire sample.
  • curve 2 1/8 inch sapphire sample is illustrated.
  • the uncoated sapphire sample spectrum (curve 1) exhibits an absorption peak at approximately 200nm, however the remaining portions of the spectrum covering the UV-visible region show the uncoated sapphire is near transparent, exhibiting only approximately 5% absorption.
  • the spectrum of the coated sapphire sample (curve 2) exhibits substantially similar absorption characteristics. The approximately 5% difference between the two spectra (curve 1 and curve 2) at 250nm decreases as the wavelength is increased, with the difference at 900nm being negligible.
  • Fig. 5 illustrates the spectrum of an uncoated 1/4 inch sapphire sample (curve 1) as compared to the spectrum of an coated sapphire sample of the same thickness (curve 2) .
  • Curve 1 and curve 2 show heavy absorption near the 200nm end of the spectrum.
  • the coated sample (curve 2) absorbs approximately 5% more than does the uncoated sample (curve 1) .
  • the difference between the two absorption spectra decreases until it is negligible at 900nm.
  • Fig. 6A and 6B show the transmission, as measured in a spectrometer, of sapphire one-eight inch thick samples.
  • Fig. 6A graphically illustrates the transmission of an uncoated sample
  • Fig. 6B illustrates the transmission of a sample coated with a 50A thick diamond-like coating produced with the method and apparatus of the present invention.
  • the coating has no measurable effect of the transmission of the sapphire in the entire spectrum.
  • Both spectra show a drop in transmission with the longer wavelengths, but this is intrinsic to sapphire.
  • a diamond-like coating produced with the method and apparatus of the present invention is transparent to wavelengths in the ranges of 250-900nm and 2500-10,OOOnm.

Abstract

Appareil et procédé destiné au dépôt, sur de la céramique, du verre et du plastique, de couche lisses, amorphes ou microcristallines, présentant la dureté du diamant et assurant une protection contre les agressions chimiques et l'abrasion. Dans une chambre à vide (1), un laser pulsé (2) dirige un faisceau (3) à travers le dispositif optique (4), la fenêtre (5), et la lentille (8), avec ses miroirs (7a, b), du dispositif de balayage (10) positionnant le faisceau focalisé (11) sur la cible carbone (12) pour produire un panache (18) de substance vaporisée. Les couches sont produites par augmentation du panache au moyen d'un circuit à condensateurs (13, 14, 15, 16). Une électrode annulaire (9) et la cible permettent de coupler au panache l'énergie stockée dans un condensateur, lequel couplage est synchrone avec le processus de dépôt par laser pulsé. L'augmentation du panache accroît d'une part l'énergie et l'ionisation de l'espèce de dépôt, et favorise d'autre part l'élargissement de la zone de panache jusqu'à ce qu'elle coïncide avec la zone du substrat (19) où doit être déposé le film. Un moteur linéaire (17) permet de positionner exactement la cible, ce qui, associé au dispositif de balayage, évite d'endommager la cible.
PCT/US1995/013585 1994-10-18 1995-10-18 Appareil destine a deposer une couche de matiere sur un substrat Ceased WO1996012389A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU41948/96A AU4194896A (en) 1994-10-18 1995-10-18 Apparatus for depositing a layer of material on a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32489494A 1994-10-18 1994-10-18
US324,894 1994-10-18

Publications (2)

Publication Number Publication Date
WO1996012389A1 WO1996012389A1 (fr) 1996-04-25
WO1996012389A9 true WO1996012389A9 (fr) 1996-10-10

Family

ID=23265565

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/013585 Ceased WO1996012389A1 (fr) 1994-10-18 1995-10-18 Appareil destine a deposer une couche de matiere sur un substrat

Country Status (2)

Country Link
AU (1) AU4194896A (fr)
WO (1) WO1996012389A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3555844B2 (ja) 1999-04-09 2004-08-18 三宅 正二郎 摺動部材およびその製造方法
JP2004138128A (ja) 2002-10-16 2004-05-13 Nissan Motor Co Ltd 自動車エンジン用摺動部材
US6969198B2 (en) 2002-11-06 2005-11-29 Nissan Motor Co., Ltd. Low-friction sliding mechanism
JP3891433B2 (ja) 2003-04-15 2007-03-14 日産自動車株式会社 燃料噴射弁
EP1479946B1 (fr) 2003-05-23 2012-12-19 Nissan Motor Co., Ltd. Piston pour un moteur à combustion interne
JP2004360649A (ja) 2003-06-06 2004-12-24 Nissan Motor Co Ltd エンジン用ピストンピン
JP4863152B2 (ja) 2003-07-31 2012-01-25 日産自動車株式会社 歯車
JP4973971B2 (ja) 2003-08-08 2012-07-11 日産自動車株式会社 摺動部材
JP2005054617A (ja) 2003-08-08 2005-03-03 Nissan Motor Co Ltd 動弁機構
DE602004008547T2 (de) 2003-08-13 2008-05-21 Nissan Motor Co., Ltd., Yokohama Struktur zur Verbindung von einem Kolben mit einer Kurbelwelle
JP4117553B2 (ja) 2003-08-13 2008-07-16 日産自動車株式会社 チェーン駆動装置
JP4539205B2 (ja) 2003-08-21 2010-09-08 日産自動車株式会社 冷媒圧縮機
US7771821B2 (en) 2003-08-21 2010-08-10 Nissan Motor Co., Ltd. Low-friction sliding member and low-friction sliding mechanism using same
EP1508611B1 (fr) 2003-08-22 2019-04-17 Nissan Motor Co., Ltd. Boîte de vitesse comprenant une composition d`huile de transmission
DE102021128160B3 (de) * 2021-10-28 2023-01-05 Joachim Richter Systeme und Maschinen GmbH & Co. KG Vorrichtung und Verfahren zum Herstellen einer Graphenschicht

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475069A1 (fr) * 1980-02-01 1981-08-07 Commissariat Energie Atomique Procede de dopage rapide de semi-conducteurs
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
FR2542327B1 (fr) * 1983-03-07 1986-03-07 Bensoussan Marcel
US4762975A (en) * 1984-02-06 1988-08-09 Phrasor Scientific, Incorporated Method and apparatus for making submicrom powders
USH872H (en) * 1987-09-15 1991-01-01 The United States Of America As Represented By The Department Of Energy Method of applying coatings to substrates
US5098737A (en) * 1988-04-18 1992-03-24 Board Of Regents The University Of Texas System Amorphic diamond material produced by laser plasma deposition
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
DE3914476C1 (fr) * 1989-05-02 1990-06-21 Forschungszentrum Juelich Gmbh, 5170 Juelich, De
JP3192666B2 (ja) * 1990-03-02 2001-07-30 住友電気工業株式会社 酸化物超電導膜の製造方法および装置
JP2742631B2 (ja) * 1990-07-24 1998-04-22 トヨタ自動車株式会社 非晶質磁性膜の製造方法
JP2917587B2 (ja) * 1991-06-12 1999-07-12 住友電気工業株式会社 複合酸化物超電導薄膜の成膜方法

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