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WO1986007493A1 - Calibration apparatus for integrated circuits - Google Patents

Calibration apparatus for integrated circuits Download PDF

Info

Publication number
WO1986007493A1
WO1986007493A1 PCT/GB1986/000346 GB8600346W WO8607493A1 WO 1986007493 A1 WO1986007493 A1 WO 1986007493A1 GB 8600346 W GB8600346 W GB 8600346W WO 8607493 A1 WO8607493 A1 WO 8607493A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
resistive layer
components
film components
test system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB1986/000346
Other languages
French (fr)
Inventor
Ian Gregory Eddison
Brian Jeffrey Buck
John Sparrow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Overseas Ltd
Original Assignee
Plessey Overseas Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Overseas Ltd filed Critical Plessey Overseas Ltd
Publication of WO1986007493A1 publication Critical patent/WO1986007493A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • H10P74/203

Definitions

  • the present invention relates to calibration apparatus for the automated on-wafer testing of integrated circuits and in particular for the automated on-wafer testing of Gallium Arsenide (Ga As) integrated circuits.
  • Ga As Gallium Arsenide
  • Network analysis in a coaxial or waveguide medium is, conventially, achieved by using a wide range of calibration and verification components.
  • a variety of such components e.g. matched load, short circuit, open circuit etc.
  • error models for the measurement ports and thus remove the error terms from subsequent measurements.
  • This technique is known as 8 to 12 term error and is described in "Error Models " for Systems Measurements", Microwave Journal, May 1978 by J. Fitzpatrick.
  • no such components are available for variable geometry microwave probe measurements and furthermore, such components would not permit an automated calibration/test procedure to be achieved, resulting in higher production costs of the devices under test.
  • apparatus for calibrating an integrated circuit test system comprising a substrate having a substantially planar array of thin film components formed thereon, at least one of the components having contact pads arranged such that they can be engaged by a coplanar waveguide probe of the integrated circuit test system.
  • the substrate may comprise alumina and the thin film components may comprise a resistive layer haying an overlay of metallised conductors.
  • the resistive layer may comprise nichrome and the metallised conductors may comprise gold.
  • the resistive layer may be deposited to a thickness to provide a sheet resistance of 50.ilper square for the resistive layer.
  • low inductance ground connections for the components are provided by via holes containing conductive meterial, such as conductive epoxy or metal.
  • the thin film components 1 to 9 are formed on an alumina substrate, typically 1 inch square, with a thin resistive layer - NiCr for example - and plated gold conductors.
  • the resistive layer is deposited to a thickness which provides sheet resistance of 50 per square.
  • the components 1 to 9 comprise as follows:- (1) 50- ⁇ terminations for alignment check,
  • Offset short circuits low inductance short circuits displaced by a length of 50-i2-transmission line;
  • the components 1 to 9 achieve low inductance local grounding by the use of via holes which may be filled with conductive material, such as conductive epoxy or metal or a metal plating on the wall of the via holes.
  • conductive material such as conductive epoxy or metal or a metal plating on the wall of the via holes.
  • the components are arranged to have the same width as the IC to be tested to remove the need for adjustment of the measuring probes between calibration and measurement and to permit auto-stepped execution of the calibration procedure.
  • the particular example illustrated is designed for an IC having one input and two output RF ports, but other designs may be used for alternative input/output port combinations.
  • Calibration using such a substrate allows the use of error correction under computer control resulting in S-parameter measurements with reference planes at the •probe tips, i.e. the IC RF contact pads. This removes the need for sophisticated but error-prone de-embedding techniques and is particularly valuable in individual IC component element characterisation.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

Apparatus for calibrating an integrated circuit test system comprises a substrate having a substantially planar array of thin film components (1-9) formed thereon. The components are provided with contact pads which, for each component, have a spacing which enable the components to be engaged by the tip of a coplanar waveguide probe of the test system. Such apparatus permits error correction to be achieved under computer control, resulting in scatter parameter measurements to be made with reference planes at the tips of the probe, obviating the need for sophisticated but error prone de-embedding techniques.

Description

Calibration Apparatus for Integrated Circuits
The present invention relates to calibration apparatus for the automated on-wafer testing of integrated circuits and in particular for the automated on-wafer testing of Gallium Arsenide (Ga As) integrated circuits.
In order to minimise costs and timescales in the production of monolithic microwave integrated circuits, it is desirable to measure the microwave performance of an integrated circuit (IC) on-wafer prior to dicing the wafer into individual chips. A means of transferring the microwave signals from the coaxial media of the test equipments to the coplanar medium of the IC radio frequency connecting pads by low-loss, low voltage standing wave ratio (VS R) probes is described in UK patent application No. 8511169, the contents of which is specifically incorporated herein by reference. The usefulness of such probe systems, however, is dependent on the accuracy of the measurements made and, to minimise errors, it is necessary to obtain a means of calibration for the test eqipment used.
For simple gain and power measurements it is possible to characterise the probes and feeds from the test equipment for insertion loss and use this information to compensate the actual results obtained. For sensitive vector S-parameter (scatter-para eter) measurements, however, a more precise model of the imperfections between the test equipment and the device under test must be determined.
Network analysis in a coaxial or waveguide medium is, conventially, achieved by using a wide range of calibration and verification components. By measuring a variety of such components, e.g. matched load, short circuit, open circuit etc. , it is possible to construct error models for the measurement ports and thus remove the error terms from subsequent measurements. This technique is known as 8 to 12 term error and is described in "Error Models" for Systems Measurements", Microwave Journal, May 1978 by J. Fitzpatrick. However, no such components are available for variable geometry microwave probe measurements and furthermore, such components would not permit an automated calibration/test procedure to be achieved, resulting in higher production costs of the devices under test.
It is an object of the present invention to provide apparatus for enabling grounded coplanar waveguide calibration of integrated circuit test equipment whereby the grounded coplanar probes used to measure the parameters of an integrated circuit under test can be utilised in the procedure for calibrating the test equipment.
Accordingly there is provided apparatus for calibrating an integrated circuit test system, the apparatus comprising a substrate having a substantially planar array of thin film components formed thereon, at least one of the components having contact pads arranged such that they can be engaged by a coplanar waveguide probe of the integrated circuit test system.
The substrate may comprise alumina and the thin film components may comprise a resistive layer haying an overlay of metallised conductors.
The resistive layer may comprise nichrome and the metallised conductors may comprise gold.
The resistive layer may be deposited to a thickness to provide a sheet resistance of 50.ilper square for the resistive layer.
Preferably, low inductance ground connections for the components are provided by via holes containing conductive meterial, such as conductive epoxy or metal.
The present invention will now be described by way of example, with reference to the accompanying drawings which illustrates an enlarged schematic plan view of apparatus in accordance with the present invention.
Referring to the drawing, the thin film components 1 to 9 are formed on an alumina substrate, typically 1 inch square, with a thin resistive layer - NiCr for example - and plated gold conductors. The resistive layer is deposited to a thickness which provides sheet resistance of 50 per square. In the example shown the components 1 to 9 comprise as follows:- (1) 50-Λterminations for alignment check,
(2) Distribution matched loads incorporating pseudo T attenuators; as described by H.J. Finlay et al, "Design and application of precision microstrip multi-octave attenuators and loads' Proc. 6th European Microwave Conference, Rome 1976.
(3) Short circuits;
(4) Through lines; to provide 50-Λ-transmission lines;
(5) 50-Ω-terminations for isolation measurement, to permit termination of both probes used in the IC test procedure simultaneously.
(6) Mismatch terminations;
(7) Offset short circuits; low inductance short circuits displaced by a length of 50-i2-transmission line;
(8) Offset open circuits; low inductance open circuits displaced by a length of 50-Ω_transmission line;
(9) Large test cell to determine sheet resistivity;
The components 1 to 9 achieve low inductance local grounding by the use of via holes which may be filled with conductive material, such as conductive epoxy or metal or a metal plating on the wall of the via holes.
The components are arranged to have the same width as the IC to be tested to remove the need for adjustment of the measuring probes between calibration and measurement and to permit auto-stepped execution of the calibration procedure. The particular example illustrated is designed for an IC having one input and two output RF ports, but other designs may be used for alternative input/output port combinations.
Calibration using such a substrate allows the use of error correction under computer control resulting in S-parameter measurements with reference planes at the •probe tips, i.e. the IC RF contact pads. This removes the need for sophisticated but error-prone de-embedding techniques and is particularly valuable in individual IC component element characterisation.
Furthermore, the use of integrated calibration components as described above facilitates and enhances the quality of measurements made using the microwave probe system thereby providing a valuable tool in monolithic microwave circuit production.
It can be seen, therefore, that considerable advantages can be achieved with the apparatus of the present invention, leading to low unit cost for the tested IC components..
Although the present invention has been described with respect to a particular embodiment it should be understood that modification may be effected within the scope of the invention.

Claims

1. Apparatus for calibrating an integrated circuit test system, the apparatus comprising a substrate having a substantially planar array of thin film components formed thereon, at least one of the components having contact pads arranged such that they can be engaged by a coplanar waveguide probe of the integrated circuit test system.
2. Apparatus according to claim 1 wherein the substrate comprises alumina and the thin film components comprise a resistive layer having an overlay of metallised conductors.
3. Apparatus according to claim 2 wherein the resistive layer comprises nichrome.
4. Apparatus according to claim 2 or claim 3 wherein the metallised conductors comprise gold.
5. Apparatus according to any one of claims 2 to 4 wherein the resistive layer is arranged to have a thickness for providing a sheet resistance of 50-^2- per square for the resistive layer.
6. Apparatus according to any one of the preceding claims comprising via holes containing electrically conductive material for providing low inductance ground connections for the thin film components of the array.
7. Apparatus according to claim 6 wherein the electrically conductive material comprises conductive epoxy.
8. Apparatus according to claim 6 wherein the electrically conductive material comprises metal.
9. Apparatus according to any one of the preceding claims wherein the thin film components comprise, in any combination, a 5θi-i termination for alignment check, a distribution matched load incorporating a pseudo-T attenuator, a short circuit, a through line for simulating a 50S transmission line, a 50-f2— termination for isolation measurement, a mismatch termination, an offset short circuit, an offset open circuit and a large test cell for determining the sheet resistivity of the apparatus.
PCT/GB1986/000346 1985-06-13 1986-06-13 Calibration apparatus for integrated circuits Ceased WO1986007493A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB858515025A GB8515025D0 (en) 1985-06-13 1985-06-13 Calibration apparatus
GB8515025 1985-06-13

Publications (1)

Publication Number Publication Date
WO1986007493A1 true WO1986007493A1 (en) 1986-12-18

Family

ID=10580709

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1986/000346 Ceased WO1986007493A1 (en) 1985-06-13 1986-06-13 Calibration apparatus for integrated circuits

Country Status (4)

Country Link
EP (1) EP0224582A1 (en)
JP (1) JPS63500907A (en)
GB (2) GB8515025D0 (en)
WO (1) WO1986007493A1 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005043176A3 (en) * 2003-10-22 2005-12-15 Cascade Microtech Inc Probe testing structure
US7138810B2 (en) 2002-11-08 2006-11-21 Cascade Microtech, Inc. Probe station with low noise characteristics
US7138813B2 (en) 1999-06-30 2006-11-21 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US7164279B2 (en) 1995-04-14 2007-01-16 Cascade Microtech, Inc. System for evaluating probing networks
US7176705B2 (en) 2004-06-07 2007-02-13 Cascade Microtech, Inc. Thermal optical chuck
US7187188B2 (en) 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
US7190181B2 (en) 1997-06-06 2007-03-13 Cascade Microtech, Inc. Probe station having multiple enclosures
US7221172B2 (en) 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7221146B2 (en) 2002-12-13 2007-05-22 Cascade Microtech, Inc. Guarded tub enclosure
US7250779B2 (en) 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US7268533B2 (en) 2001-08-31 2007-09-11 Cascade Microtech, Inc. Optical testing device
US7330041B2 (en) 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
US7330023B2 (en) 1992-06-11 2008-02-12 Cascade Microtech, Inc. Wafer probe station having a skirting component
US7348787B2 (en) 1992-06-11 2008-03-25 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US7352168B2 (en) 2000-09-05 2008-04-01 Cascade Microtech, Inc. Chuck for holding a device under test
US7368925B2 (en) 2002-01-25 2008-05-06 Cascade Microtech, Inc. Probe station with two platens
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7554322B2 (en) 2000-09-05 2009-06-30 Cascade Microtech, Inc. Probe station

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4183859B2 (en) * 1999-09-02 2008-11-19 株式会社アドバンテスト Semiconductor substrate testing equipment
DE10056882C2 (en) * 2000-11-16 2003-06-05 Infineon Technologies Ag Method for calibrating a test system for semiconductor components and test substrate
CN103954927B (en) * 2014-05-21 2016-03-23 常州天合光能有限公司 Volume resistance and sheet resistance conversion calibration device and calibration method thereof
CN118707424B (en) * 2024-08-30 2024-11-22 四川映塞科技有限责任公司 Automatic calibration system and method for sheet resistance tester

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0128986A2 (en) * 1982-12-23 1984-12-27 Sumitomo Electric Industries Limited Monolithic microwave integrated circuit and method for selecting it

Family Cites Families (2)

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US4349792A (en) * 1978-07-14 1982-09-14 Kings Electronics Co., Inc. Pi pad attenuator
US4272739A (en) * 1979-10-18 1981-06-09 Morton Nesses High-precision electrical signal attenuator structures

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
EP0128986A2 (en) * 1982-12-23 1984-12-27 Sumitomo Electric Industries Limited Monolithic microwave integrated circuit and method for selecting it

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Microwave Journal, Volume 21, No. 5, May 1978, Dedham (US) J. FITZPATRICK: "Error Models for Systems Measurement" pages 63-66 (cited in the application) *
New Electronics, Volume 17, No. 6, March 1984, London (GB) S. WENDEL et al.: "High Reliability Substrate Attach for Thin Film Hybrids" pages 97-100 *
Proceedings of the 6th European Microwave Conference, 1976, Roma (IT) H.J. FINLAY et al.: "Design and Applications of Precision Microstrip Multioctave Attenuators and Loads", pages 692-696 (cited in the application) *

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348787B2 (en) 1992-06-11 2008-03-25 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US7595632B2 (en) 1992-06-11 2009-09-29 Cascade Microtech, Inc. Wafer probe station having environment control enclosure
US7589518B2 (en) 1992-06-11 2009-09-15 Cascade Microtech, Inc. Wafer probe station having a skirting component
US7330023B2 (en) 1992-06-11 2008-02-12 Cascade Microtech, Inc. Wafer probe station having a skirting component
US7492147B2 (en) 1992-06-11 2009-02-17 Cascade Microtech, Inc. Wafer probe station having a skirting component
US7164279B2 (en) 1995-04-14 2007-01-16 Cascade Microtech, Inc. System for evaluating probing networks
US7321233B2 (en) 1995-04-14 2008-01-22 Cascade Microtech, Inc. System for evaluating probing networks
US7626379B2 (en) 1997-06-06 2009-12-01 Cascade Microtech, Inc. Probe station having multiple enclosures
US7436170B2 (en) 1997-06-06 2008-10-14 Cascade Microtech, Inc. Probe station having multiple enclosures
US7190181B2 (en) 1997-06-06 2007-03-13 Cascade Microtech, Inc. Probe station having multiple enclosures
US7138813B2 (en) 1999-06-30 2006-11-21 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US7616017B2 (en) 1999-06-30 2009-11-10 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US7292057B2 (en) 1999-06-30 2007-11-06 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US7518358B2 (en) 2000-09-05 2009-04-14 Cascade Microtech, Inc. Chuck for holding a device under test
US7501810B2 (en) 2000-09-05 2009-03-10 Cascade Microtech, Inc. Chuck for holding a device under test
US7514915B2 (en) 2000-09-05 2009-04-07 Cascade Microtech, Inc. Chuck for holding a device under test
US7423419B2 (en) 2000-09-05 2008-09-09 Cascade Microtech, Inc. Chuck for holding a device under test
US7554322B2 (en) 2000-09-05 2009-06-30 Cascade Microtech, Inc. Probe station
US7352168B2 (en) 2000-09-05 2008-04-01 Cascade Microtech, Inc. Chuck for holding a device under test
US7268533B2 (en) 2001-08-31 2007-09-11 Cascade Microtech, Inc. Optical testing device
US7368925B2 (en) 2002-01-25 2008-05-06 Cascade Microtech, Inc. Probe station with two platens
US7295025B2 (en) 2002-11-08 2007-11-13 Cascade Microtech, Inc. Probe station with low noise characteristics
US7138810B2 (en) 2002-11-08 2006-11-21 Cascade Microtech, Inc. Probe station with low noise characteristics
US7250779B2 (en) 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US7498828B2 (en) 2002-11-25 2009-03-03 Cascade Microtech, Inc. Probe station with low inductance path
US7221146B2 (en) 2002-12-13 2007-05-22 Cascade Microtech, Inc. Guarded tub enclosure
US7639003B2 (en) 2002-12-13 2009-12-29 Cascade Microtech, Inc. Guarded tub enclosure
US7468609B2 (en) 2003-05-06 2008-12-23 Cascade Microtech, Inc. Switched suspended conductor and connection
US7221172B2 (en) 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7876115B2 (en) 2003-05-23 2011-01-25 Cascade Microtech, Inc. Chuck for holding a device under test
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
WO2005043176A3 (en) * 2003-10-22 2005-12-15 Cascade Microtech Inc Probe testing structure
US7250626B2 (en) * 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
GB2423588A (en) * 2003-10-22 2006-08-30 Cascade Microtech Inc Probe testing structure
GB2423588B (en) * 2003-10-22 2007-08-08 Cascade Microtech Inc Probe testing structure
US7362115B2 (en) 2003-12-24 2008-04-22 Cascade Microtech, Inc. Chuck with integrated wafer support
US7187188B2 (en) 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
US7504823B2 (en) 2004-06-07 2009-03-17 Cascade Microtech, Inc. Thermal optical chuck
US7176705B2 (en) 2004-06-07 2007-02-13 Cascade Microtech, Inc. Thermal optical chuck
US7330041B2 (en) 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors

Also Published As

Publication number Publication date
EP0224582A1 (en) 1987-06-10
GB2184849A (en) 1987-07-01
GB8614398D0 (en) 1986-07-16
GB8515025D0 (en) 1985-07-17
JPS63500907A (en) 1988-03-31

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