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US20190187342A1 - Antireflective film, method of producing antireflective film, and eyeglass type display - Google Patents

Antireflective film, method of producing antireflective film, and eyeglass type display Download PDF

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Publication number
US20190187342A1
US20190187342A1 US16/208,737 US201816208737A US2019187342A1 US 20190187342 A1 US20190187342 A1 US 20190187342A1 US 201816208737 A US201816208737 A US 201816208737A US 2019187342 A1 US2019187342 A1 US 2019187342A1
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Prior art keywords
antireflective film
pattern
film according
photoresist material
bromine
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Abandoned
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US16/208,737
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English (en)
Inventor
Jun Hatakeyama
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Assigned to SHIN-ETSU CHEMICAL CO., LTD. reassignment SHIN-ETSU CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HATAKEYAMA, JUN
Publication of US20190187342A1 publication Critical patent/US20190187342A1/en
Priority to US17/111,613 priority Critical patent/US11762127B2/en
Abandoned legal-status Critical Current

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    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0294—Diffusing elements; Afocal elements characterized by the use adapted to provide an additional optical effect, e.g. anti-reflection or filter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
    • G—PHYSICS
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    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
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    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
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Definitions

  • the present invention relates to an antireflective film for collecting visible light with a shallow incidence angle without reflecting it and for emitting visible light at a shallow angle without reflecting it, a method of producing the antireflective film, and an eyeglass type display using the antireflective film.
  • a head mount display is replaced with an eyeglass type display, which is light in weight, it is possible to reduce the weight substantially. In this case, it becomes necessary to provide a technique to project oblique incident light that is extremely thin, a thin constitution of lenses to focus on an object at a short distance, and a high quality antireflective film material to project light with a shallow incidence angle without reflecting it.
  • An antireflective film with a moth eye structure has been proposed (NON-PATENT LITERATURE 1).
  • the reason why moths can detect light with high efficiency even in darkness is that the surface of their eye has a structure with repeated minute projections.
  • This structure is artificially formed in an antireflection film, which has been proposed (PATENT LITERATURE 5).
  • PATENT LITERATURE 5 massed pillars with higher refractive index are formed in which the pillar is finer than the wavelength, finer at the tip and thicker at the substrate side, thereby making the refractive index be lower at the tip and higher at the substrate side.
  • the moth eye structure can realize effect that is similar in the case of multilayer antireflective film.
  • the antireflective film with a moth eye structure is formed by imprint technique in which a printing block is pushed against resin, and the resin is transformed while heating under certain circumstances.
  • the imprint method involves a drawback of wearing of the printing block, which makes it impossible to form a pattern.
  • the moth eye structure itself involves a problem that the antireflective function lowers when a foreign matter sticks to the pillars or the pillar breaks.
  • the present invention was accomplished in view of the above-described problems. It is an object of the present invention to provide an antireflective film that is able to give antireflection effect to decrease the reflection of light, a method of producing the same, and an eyeglass type display.
  • an antireflective film comprising:
  • a pattern composed of a photoresist material formed on the support base the pattern having a larger size at a point closer to the support base.
  • the inventive antireflective film is able to give antireflection effect to decrease the reflection of light.
  • the pattern have a pitch of 400 nm or less.
  • the antireflective film having such a pattern pitch is able to prevent diffuse reflection on the pattern.
  • the photoresist material contain a polymer compound having an aromatic group.
  • the antireflective film becomes easy in manufacturing.
  • the photoresist material preferably contains a polymer compound that contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene, fluorene, anthracene, and cyclopentadienyl complexes.
  • the photoresist material preferably contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine, benzene (meth)acrylate substituted with iodine or bromine, and benzene (meth)acrylamide substituted with iodine or bromine.
  • the photoresist material preferably has a refractive index of 1.6 or more with respect to visible light having a wavelength of 590 to 610 nm.
  • the pattern be covered with a low-refractive-index material having a refractive index of 1.45 or less with respect to visible light having a wavelength of 590 to 610 nm.
  • the antireflective film is preferably such that the transmittance of visible light having a wavelength of 400 to 800 nm is 80% or more.
  • the antireflective film with such transmittance can be preferably used for a light-weight and thin eyeglass-type head mount display by which light with higher brightness and higher contrast can be seen.
  • the present invention also provides an eyeglass type display, comprising:
  • a self-emitting display selected from the group consisting of liquid crystal, organic EL, and micro LED installed on a substrate at the side of an eyeball of the eyeglass type display, and
  • a convex lens for focusing installed on the side of an eyeball of the self-emitting display
  • the antireflective film described above is formed on a surface of the convex lens.
  • the inventive eyeglass type display can be preferably used as a light-weight and thin eyeglass-type head mount display by which light with higher brightness and higher contrast can be seen.
  • the present invention also provides a method of producing an antireflective film, comprising:
  • the inventive method of producing an antireflective film facilitates manufacturing an antireflective film that is allowed to have antireflective effect to exhibit lower reflection of light.
  • the method of producing an antireflective film preferably comprises
  • the pattern is formed on the organic film using the photoresist material.
  • the inventive antireflective film can be manufactured more easily.
  • the pattern it is preferable to set the pattern to have a pitch of 400 nm or less.
  • the photoresist material containing a polymer compound having an aromatic group It is preferable to use the photoresist material containing a polymer compound having an aromatic group.
  • the antireflective film of the present invention can be manufactured more easily.
  • the photoresist material having a refractive index of 1.6 or more with respect to visible light having a wavelength of 590 to 610 nm.
  • the production method makes it possible to manufacture an antireflective film that is prevented from lowering of antireflection effect due to pattern collapse.
  • a moth eye-type antireflective film is successfully formed with a pattern in a tapered profile formed by exposure and development using a photoresist based on a highly refractive polymer.
  • This makes it possible to obtain antireflective effect, which exhibits lower reflection of visible light even to incident light and emitted light with a shallow angle.
  • a lens(es) with a high refractive index when it is combined with a lens(es) with a high refractive index, light emitted from liquid crystal, organic EL, and micro LED that are installed near eyes can be seen in the state of higher contrast and higher brightness.
  • the inventive method of producing an antireflective film makes it possible to form the inventive antireflective film easily.
  • using the inventive antireflective film it is possible to realize an eyeglass type display which is substantially light in weight and thin compared to previous head mount displays.
  • FIG. 1 is a schematic sectional view showing an example of the inventive antireflective film after forming a highly refractive resist pattern
  • FIG. 2 is a schematic sectional view showing an example of the inventive antireflective film after forming a highly refractive resist pattern and forming a lower refractive film thereon;
  • FIG. 3 is a schematic top view showing an example of a pattern layout of the inventive antireflective film after forming a highly refractive resist pattern
  • FIG. 4 is a schematic top view showing another example of a pattern layout of the inventive antireflective film after forming a highly refractive resist pattern
  • FIG. 5 is a schematic sectional view showing an example of the case of wearing the inventive eyeglass type display
  • FIG. 6 is a schematic sectional view showing a method of measuring light transmittance of the inventive antireflective film in Examples.
  • the refractive index of the film it is also conceivable to alter the refractive index of the film to be laminated by blending a material with a higher refractive index and a material with a lower refractive index, together with altering the ratio of blending.
  • the material with a higher refractive index and the material with a lower refractive index are largely different in polarity in many cases, and are not mixed after blending thereby. Accordingly, this method is not popular either.
  • a film in which the moth eye pattern described above is formed as an antireflective film.
  • the moth eye pattern is formed by imprint technique to process a resin film by pressing a mold called stamper while heating the resin film.
  • the present inventors diligently investigated to achieve the foregoing objects and consequently found that the moth eye pattern is successfully improved greatly in the throughput if it can be formed by exposure and development, and still more enhanced antireflection effect can be obtained using a highly refractive material as a photoresist to form the moth eye pattern; thereby bringing the present invention to completion.
  • the present invention is an antireflective film, comprising:
  • a pattern composed of a photoresist material formed on the support base the pattern having a larger size at a point closer to the support base.
  • the present invention provides an antireflective film in which a pattern composed of a photoresist material is formed on a support base, and the pattern has a larger size at a point closer to the support base, that is, the pattern is flared toward the support base.
  • FIG. 1 An example of the inventive antireflective film is shown in FIG. 1 as a schematic sectional view.
  • the antireflective film 101 of FIG. 1 is a film in which a pattern 13 (moth eye pattern) composed of a photoresist material 12 is formed on a support base 11 , with the pattern 13 having a larger size at a point closer to the support base 11 .
  • a pattern 13 moth eye pattern
  • the moth eye pattern may have any layout, when it is observed from the above, such as a crosswise arrangement as shown in FIG. 3 , an arrangement shown in FIG. 4 , and other arrangement, but the pattern is preferably in the same pitch and the same size. With the pattern in the same size and pitch, the refractive index of the film becomes uniform and is favorable.
  • the transmittance of visible light having a wavelength of 400 to 800 nm is preferably 80% or more.
  • the moth eye pattern 13 is preferably set to have a pitch smaller than the wavelength of the visible light. This successfully prevents diffuse reflection on the moth eye pattern 13 . Since the shortest wavelength in the visible light is about 400 nm, the pitch of the pattern is preferably 400 nm or less, more preferably 300 nm or less.
  • the height of the moth eye pattern 13 is preferably 50 nm or more and 1000 nm or less, more preferably 100 nm or more and 800 nm or less.
  • the resin film formed by common imprint method has a refractive index of about 1.5, but a moth eye pattern having a higher refractive index than 1.5 can be formed from a photoresist material as in the present invention. With higher refractive index, it is possible to achieve higher antireflection effect to emit or introduce shallower light. Accordingly, the photoresist material preferably has a refractive index of 1.6 or more, more preferably 1.65 or more, still more preferably 1.7 or more with respect to visible light having a wavelength of 590 to 610 nm.
  • the moth eye pattern 13 have to be formed such that the upper part has a smaller size, and the face adjoined to the underneath support base has a larger size as shown in FIG. 1 .
  • the profile of the moth eye pattern 13 shown in FIG. 1 has a triangular shape, it may be a trapezoid shape, in which the upper part is planer, or a shape of halved oval. In any shape, this makes the refractive index at the upper part lower and the refractive index at the lower part higher.
  • the methods to form a pattern with a tapered shape like this include a method using a resist material with higher absorption and a method using a resist material with a lower dissolution contrast.
  • the resist material having a naphthalene-containing structure has appropriate absorption of KrF excimer laser at a wavelength of 248 nm and ArF excimer laser at a wavelength of 193 nm, thereby being preferable since a moth eye pattern can be formed by lithography using these excimer laser.
  • the photoresist material preferably has an aromatic group, and a polymer compound having a condensed aromatic ring is more preferable due to the higher refractive index.
  • a resist material having an acid-labile group of condensed aromatic ring is exemplified in JP 2010-237662A, JP 2010-237661A, JP 2011-150103A, JP 2011-138107A, and JP 2011-141471A.
  • the preferable examples thereof also include a resist material that contains any of acenaphthylene described in JP 2002-119659A, vinylferrocene described in JP 2014-119659A, hydroxyvinylnaphthalene described in JP 2002-107933A, and hydroxynaphthalene methacrylate described in JP 2007-114728A since they have a higher refractive index.
  • the resist material described in JP H05-204157A which contains hydroxystyrene substituted with bromine or iodine, has higher refractive index and is preferable thereby.
  • the following are exemplified as a monomer to obtain a repeating unit having a naphthalene structure.
  • the following are exemplified as a monomer to obtain a repeating unit having any of styrene substituted with iodine or bromine, benzene (meth)acrylate substituted with iodine or bromine, and benzene (meth)acrylamide substituted with iodine or bromine.
  • the following are exemplified as a monomer to obtain a repeating unit having a cyclopentadienyl complex.
  • the following cyclopentadienyl complexes are preferably ferrocene.
  • R represents a hydrogen atom or a methyl group
  • M represent any of Fe, Co, Ni, Cr, and Ru.
  • the aforementioned polymer compounds are suitable, particularly for a base resin of a positive type resist material with higher refractive index.
  • a positive type resist material composed of the polymer compound like this as a base material together with organic solvent, acid generator, a basic compound, and surfactant formulated thereto being appropriately combined in accordance with needs, the polymer compound dissolves into developer at an accelerated rate in the exposed part due to catalytic reaction, thereby allowing the positive type resist material to have extremely high sensitivity, to form a resist film with high dissolution contrast and resolution, to have exposure margin and an excellent process adaptability, and to form a moth eye pattern with higher refractive index with respect to visible light after exposure.
  • the photoresist material preferably contains a polymer compound, among the polymer compounds described above, which contains 85% or more of a repeating unit having at least one structure selected from the group consisting of naphthalene, fluorene, anthracene, and cyclopentadienyl complexes.
  • the photoresist material preferably contains a polymer compound that contains 50% or more of a repeating unit having any of styrene substituted with iodine or bromine, benzene (meth)acrylate substituted with iodine or bromine, and benzene (meth)acrylamide substituted with iodine or bromine.
  • the resist material is allowed to decrease diffusion rate of acid in the resist film to further improve the resolution by adding a basic compound, and the application property of the resist material is more improved or controllable by adding surfactant.
  • the resist material may contain an acid generator to activate the chemically amplified positive type resist material used for the patterning process of the production method that will be described later, for example, a compound capable of generating an acid by responding to an active beam or a radiation beam (photo acid generator) may be contained therein.
  • a compound capable of generating an acid by responding to an active beam or a radiation beam may be contained therein.
  • the photo acid generator component any compound capable of generating an acid by exposure to a high energy beam can be used.
  • the suitable photo acid generator include a sulfonium salt, an iodonium salt, a sulfonyldiazomethane, an N-sulfonyloxyimide, and an oxime-O-sulfonate type acid generator.
  • Illustrative examples of the components that can be formulated to the resist material include organic solvent, a basic compound (quencher), and surfactant described in paragraphs [0144] to [0145], paragraphs [0146] to [0164], and paragraphs [0165] to [0166] of JP 2008-111103A respectively, together with dissolution inhibitor described in paragraphs [0155] to [0178] of JP 2008-122932A. It is also possible to add a polymer type quencher described in JP 2008-239918A. In accordance with needs, acetylene alcohols can be added as an optional component, and illustrative examples thereof include acetylene alcohols described in paragraphs [0179] to [0182] of JP 2008-122932A.
  • the polymer-type quencher also has the effects to prevent film loss of the pattern when a top coat for immersion exposure is formed thereon as well as rounding of the pattern head.
  • the formulate amount is preferably 0.1 to 50 parts by mass based on 100 parts by mass of the base resin.
  • the formulate amount is preferably 0.01 to 20 parts by mass, particularly 0.02 to 15 parts by mass based on 100 parts by mass of the base resin.
  • the formulate amount is preferably 0.5 to 50 parts by mass, particularly 1.0 to 30 parts by mass based on 100 parts by mass of the base resin.
  • the surfactant is formulated, the formulate amount is preferably 0.0001 to 10 parts by mass, particularly 0.001 to 5 parts by mass based on 100 parts by mass of the base resin.
  • the formulate amount of organic solvent is preferably 100 to 10,000 parts by mass, particularly 200 to 8,000 parts by mass based on 100 parts by mass of the base resin.
  • the support base can be any material as far as it can support the moth eye pattern, such as an underlayer film and a substrate without being particularly limited thereto.
  • the underlayer film may be any of an organic film and an inorganic film. It is also possible to form a moth eye pattern directly on a substrate without providing an underlayer film. However, the underlayer film and the substrate are preferable to be highly transparent with respect to visible light. Additionally, it is also preferable that the substrate and the underlayer film each have higher refractive index. When a substrate is used as the support base, it is preferable to use a substrate treated with HMDS (Hexamethyldisilazan).
  • HMDS Hexamethyldisilazan
  • FIG. 2 is a schematic sectional view showing an example of the inventive antireflective film in which the moth eye patterns 13 are coated with the low-refractive-index material 14 .
  • the gaps between the moth eye patterns 13 which are formed by exposing and developing photoresist, may be buried by the low-refractive-index material 14 to form an antireflective film 111 . Since collapsing of the moth eye patterns 13 causes lowering of the antireflection effect, the burying of the moth eye patterns 13 is also effective to prevent the moth eye patterns 13 from collapsing when it is touched.
  • the low-refractive-index material for burring the moth eye pattern a material that is applicable by spin-coating is preferable, and fluorine polymers can be exemplified, for example.
  • the low-refractive-index material preferably has a refractive index of 1.45 or less.
  • Teflon (trade mark) type polymer has a refractive index of 1.35 in the area of visible light. Even in methacrylate having a pendant fluoroalkyl group, the refractive index is about 1.42.
  • JP 2008-257188A shows a crosslinkable underlayer film with a lower refractive index having a fluoroalcohol group.
  • porous silica films can be exemplified.
  • the refractive index is decreased by enlarging the size of the pores or increasing the ratio of the pores, and can be decreased to about 1.25 thereby.
  • the low-refractive-index material for burring the moth eye pattern is preferably dissolved into a solvent that does not dissolve a resist pattern and applied onto a moth eye pattern by spin-coating.
  • a solvent that does not dissolve a resist pattern include alcohol type solvents, ether type solvents, hydrocarbon type solvents, and fluorine type solvents.
  • the inventive antireflective film in which a moth eye structure is formed, allows the image projected from a display of liquid crystal, organic EL, or micro LED to emit obliquely with high brightness and high contrast. It is also possible to prevent reflection of oblique incident light from the opposite side of a display not only reflection in which light emitted from the display side returns to the display side.
  • the present invention also provides an eyeglass type display, comprising:
  • a self-emitting display selected from the group consisting of liquid crystal, organic EL, and micro LED installed on a substrate at the side of an eyeball of the eyeglass type display, and
  • a convex lens for focusing installed on the side of an eyeball of the self-emitting display
  • inventive antireflective film is formed on a surface of the convex lens.
  • FIG. 5 is a schematic sectional view showing an example of the case of wearing the inventive eyeglass type display.
  • the self-emitting display 2 is provided at the side of an eyeball of the eyeglass substrate 1 .
  • the self-emitting display 2 is made of any of liquid crystal, organic EL, or micro LED.
  • the convex lens 3 is provided on the side of an eyeball of the self-emitting display 2 .
  • Each convex lens 3 is provided for focusing light emitted from the self-emitting display 2 on the eye 5 .
  • the inventive antireflective film 101 is provided at the side of an eyeball of the convex lens 3 .
  • the antireflective film 101 is as described above. It is also possible to use the antireflective film 111 instead of the antireflective film 101 .
  • the inventive eyeglass type display makes it possible to realize an eyeglass type display, which is substantially light in weight and thin compared to previous head mount displays.
  • the present invention also provides a method of producing an antireflective film, comprising:
  • the inventive method of producing an antireflective film preferably includes a step of applying the resist material described above onto a support base, a step of heat treatment followed by exposure to high energy beam, and a step of development using developer.
  • a light source such as ArF excimer laser at a wavelength of 193 nm, KrF excimer laser at a wavelength of 248 nm, i-beam at a wavelength of 365 nm, and accelerated electron beam.
  • the resist material described above is applied onto a substrate for manufacturing an integrated circuit or a layer to be processed on the substrate (Si, SiO 2 , SiN, SiON, TiN, WSi, BPSG, SOG, an organic antireflective film; a flexible substrate such as thin film glass, PEN, PET, or polyimide; or a device on which an organic EL, liquid crystal, or micro LED have been formed) by appropriate coating method such as spin-coating, roll coating, flow-coating, dip coating, spray coating, and doctor coating to have a thickness of coating film of 0.1 to 2.0 ⁇ m.
  • This is pre baked on a hot plate at 60 to 150° C. for 10 seconds to 30 minutes, preferably at 80 to 120° C. for 30 seconds to 20 minutes.
  • this is exposed to a high energy beam using a light source selected from ultraviolet beam, a far ultraviolet beam, an electron beam, an X-ray, a soft X-ray, an excimer laser, a ⁇ -ray, a synchrotron radiation ray, and EUV to form an intended pattern through a certain mask or directly.
  • the exposure is preferably performed to have an exposure dose of about 1 to 200 mJ/cm 2 , particularly 10 to 100 mJ/cm 2 , or about 0.1 to 100 ⁇ C/cm 2 , particularly 0.5 to 50 ⁇ C/cm 2 .
  • this is subjected to PEB on a hot plate, preferably at 60 to 150° C. for 10 seconds to 30 minutes, more preferably at 80 to 120° C. for 30 seconds to 20 minutes.
  • this is developed by ordinary method such as a dip method, a puddle method, and a spray method preferably using a developer of aqueous alkaline solution such as 0.1 to 5 mass %, more preferably 2 to 3 mass % of tetramethylammonium hydroxide (TMAH), choline hydroxide, tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), benzyltrimethylammonium hydroxide, and benzyltriethylammonium hydroxide, preferably 3 seconds to 3 minutes, more preferably 5 seconds to 2 minutes.
  • TMAH tetramethylammonium hydroxide
  • TEAH tetraethylammonium hydroxide
  • TPAH tetrapropylammonium hydroxide
  • TBAH tetrabutylammonium hydroxide
  • the mask pattern used for exposure to form a moth eye pattern it is possible to use the one shown in JP 2010-186064A, for example. That is, it is possible use a line-and-space pattern arranged in the Y direction and the X direction, a latticed pattern, and a dot pattern.
  • the illumination illustrative examples thereof include a method of performing dipole illumination in the X direction and the Y direction twice, and a method of performing one exposure with a cross pole illumination or annular illumination.
  • the inventive method of producing an antireflective film like this makes it possible to easily manufacture an antireflective film that exhibits antireflection effect with lower reflection of visible light even to incident light and emitted light with a shallow angle.
  • High refractive index resist polymers-1 to 8 and Underlayer film resist polymer-1 for forming an underlayer film as a support base obtained by radical polymerization as described below were prepared.
  • Photo-acid generators PAG1, PAG2, PAG3 (see the following structural formulae)
  • the refractive index of this film was measured by spectroscopic ellipsometry. The results are shown in Table 2.
  • Teflon (registered trade mark) AF polymer manufactured by Du Pont-Mitsui Fluorochemicals Co., Ltd. and solvent were blended in the composition of Table 3, spin coated onto a silicon wafer, and crosslinked by baking at 100° C. for 60 seconds to form a low refractive index-over coat film with the film thickness of 250 nm.
  • the refractive index of this film was measured by spectroscopic ellipsometry. The results are shown in Table 3.
  • an underlayer film solution was applied to form UDL-1 film with the film thickness of 200 nm by the same spin coat method and baking conditions as described above.
  • the solution of photoresist was applied thereonto under the same conditions and baked at 110° C. for 60 seconds to form a photoresist film with the film thickness of 250 nm.
  • This was exposed using KrF excimer laser scanner S-206D manufactured by Nikon Corporation (NA: 0.82, dipole illumination) and 6% half-tone phase shift mask to form a pattern in the X direction of 130 nm line-and-space and a pattern in the Y direction of 130 nm line-and-space at the same position so as to intersect with the pattern in the X direction.
  • the cross section of the developed pattern was observed and photographed to observe that a pillar pattern with the pitch of 260 nm was formed in a tapered profile with the side wall angle of 70 to 80°.
  • Example 10 a low refractive index-over coat film was formed under the same conditions as described above after a pattern was formed to bury the gaps between the patterns by TCL-1 as in FIG. 2 .
  • Comparative Example 3 a TCL-1 film was formed on the photoresist film under the same conditions.
  • the illumination intensity at the angle of 60° thereof was measured by the method in which a slit with the width of 1 mm was formed in the shielding film 103 on the back side of the synthesis quartz substrate on which the antireflective film 101 was not formed, and this slit was used as a point light source, which was illuminated with the LED illumination 104 of 1200 lumen white light in a fluorescent type attached thereto.
  • the same measurement was conducted. The results are shown in Table 4.
  • each inventive antireflective film produced in Examples 1 to 11 showed higher illumination of the transmitted light.
  • Comparative Examples 1 to 3 showed lower illumination of the transmitted light than that of the inventive antireflective film.

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10705268B2 (en) * 2018-06-29 2020-07-07 Applied Materials, Inc. Gap fill of imprinted structure with spin coated high refractive index material for optical components
US20210107045A1 (en) * 2018-09-25 2021-04-15 Huawei Technologies Co., Ltd. Anti-Fingerprint Terminal Housing and Terminal
KR20220044564A (ko) 2019-08-09 2022-04-08 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 중합체, 조성물, 막형성용 조성물, 패턴형성방법, 절연막의 형성방법 및 화합물의 제조방법, 그리고 요오드함유 비닐폴리머 및 그의 아세틸화유도체의 제조방법
CN115616688A (zh) * 2022-09-08 2023-01-17 荣耀终端有限公司 减反射膜及其制造方法、电子设备
US11635622B1 (en) * 2018-12-07 2023-04-25 Meta Platforms Technologies, Llc Nanovided spacer materials and corresponding systems and methods
KR20230123513A (ko) 2020-12-21 2023-08-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 중합체, 조성물, 막형성용 조성물, 패턴의형성방법, 절연막의 형성방법 및 화합물의 제조방법
KR20250027629A (ko) 2022-06-28 2025-02-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 조성물, 수지 조성물, 막형성용 조성물, 패턴 형성방법 및 화합물
KR20250126726A (ko) 2022-12-20 2025-08-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물의 제조방법, 중합체, 조성물, 패턴 형성방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023248569A1 (ja) * 2022-06-22 2023-12-28 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110040056A1 (en) * 2008-03-17 2011-02-17 Arimichi Okumura Process for production of polymer
JP2016112804A (ja) * 2014-12-16 2016-06-23 大日本印刷株式会社 反射防止物品及び美術品展示体
US20160370505A1 (en) * 2015-06-19 2016-12-22 Nam-il KOO Anti-reflective film, electronic device including the same, and apparatus for and method of manufacturing the same
US20170160453A1 (en) * 2015-12-02 2017-06-08 Samsung Electronics Co., Ltd. Antireflection film and organic light emitting display device including the same
US9905168B1 (en) * 2015-12-28 2018-02-27 Oculus Vr, Llc Luminance-based non-uniformity correction for display panels in head-mounted displays
US20190191560A1 (en) * 2016-08-17 2019-06-20 The University Of North Carolina At Chapel Hill Flexible conductive transparent films, articles and methods of making same

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054991A (en) 1991-12-02 2000-04-25 Texas Instruments Incorporated Method of modeling player position and movement in a virtual reality system
JPH06236432A (ja) 1991-12-02 1994-08-23 Texas Instr Inc <Ti> 仮想現実システムおよび仮想現実像の仮想現実世界生成方法
JPH05264802A (ja) 1992-01-21 1993-10-15 Asahi Optical Co Ltd 多層反射防止膜
JPH05204157A (ja) * 1992-01-29 1993-08-13 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH05215908A (ja) * 1992-02-03 1993-08-27 Hitachi Ltd ルーバーフィルムフィルターおよびそれを装着した表示装置
JPH0836143A (ja) * 1994-05-16 1996-02-06 Casio Comput Co Ltd ヘッドマウントディスプレイ装置
JP3632271B2 (ja) * 1995-12-28 2005-03-23 富士ゼロックス株式会社 メガネディスプレイ
JP3131631B2 (ja) * 1999-03-09 2001-02-05 工業技術院長 画像表示装置
JP4502445B2 (ja) * 2000-03-16 2010-07-14 大日本印刷株式会社 反射防止フィルムの製造方法
JP3829913B2 (ja) * 2000-09-27 2006-10-04 信越化学工業株式会社 レジスト材料
JP2002119659A (ja) 2000-10-16 2002-04-23 Fuji Shoji:Kk 遊技機
JP2004077632A (ja) 2002-08-13 2004-03-11 Mitsubishi Chemicals Corp プリズムシート
JP4328951B2 (ja) * 2003-10-07 2009-09-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2006235195A (ja) * 2005-02-24 2006-09-07 Matsushita Electric Ind Co Ltd 反射防止構造体を有する部材の製造方法
JP2007071917A (ja) * 2005-09-02 2007-03-22 Pentax Corp 反射防止構造を有する光学素子
JP4742943B2 (ja) 2005-09-06 2011-08-10 ソニー株式会社 反射防止膜及び露光方法
JP4697443B2 (ja) 2005-09-21 2011-06-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4858714B2 (ja) 2006-10-04 2012-01-18 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
KR101116963B1 (ko) 2006-10-04 2012-03-14 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법
JP4849267B2 (ja) 2006-10-17 2012-01-11 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US7771914B2 (en) 2006-10-17 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP4900603B2 (ja) * 2006-10-24 2012-03-21 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP4809378B2 (ja) 2007-03-13 2011-11-09 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
JP4435196B2 (ja) 2007-03-29 2010-03-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP2008299069A (ja) * 2007-05-31 2008-12-11 Shin Etsu Chem Co Ltd 新規光酸発生剤を含有するレジスト材料及びパターン形成方法
JP5019071B2 (ja) 2007-09-05 2012-09-05 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5013115B2 (ja) * 2007-12-05 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
JP2009230045A (ja) * 2008-03-25 2009-10-08 Dainippon Printing Co Ltd 反射防止積層体
JP4826846B2 (ja) 2009-02-12 2011-11-30 信越化学工業株式会社 パターン形成方法
JP5463963B2 (ja) 2009-03-09 2014-04-09 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5407941B2 (ja) 2009-03-09 2014-02-05 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
US20100259823A1 (en) * 2009-04-09 2010-10-14 General Electric Company Nanostructured anti-reflection coatings and associated methods and devices
JP2011033839A (ja) * 2009-07-31 2011-02-17 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、それを用いたパターン形成方法
JP5264654B2 (ja) * 2009-08-31 2013-08-14 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP2011053496A (ja) * 2009-09-02 2011-03-17 Sony Corp 光学素子およびその製造方法、ならびに原盤の製造方法
JP2011070020A (ja) * 2009-09-25 2011-04-07 Toppan Printing Co Ltd 反射防止構造体及びその製造方法
JP5573595B2 (ja) 2009-12-02 2014-08-20 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5402651B2 (ja) 2010-01-08 2014-01-29 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP5407892B2 (ja) 2010-01-21 2014-02-05 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
CN102859397B (zh) 2010-04-13 2015-11-25 旭化成电子材料株式会社 自支撑膜、自支撑结构体、自支撑膜的制造方法及表膜
JP2012196965A (ja) * 2011-03-10 2012-10-18 Mitsubishi Rayon Co Ltd 積層体及びその製造方法
JP5829177B2 (ja) 2011-07-12 2015-12-09 富士フイルム株式会社 インプリント用硬化性組成物、パターン形成方法およびパターン
US8988474B2 (en) 2011-07-18 2015-03-24 Microsoft Technology Licensing, Llc Wide field-of-view virtual image projector
CN202177750U (zh) * 2011-08-19 2012-03-28 天马微电子股份有限公司 一种3d液晶眼镜及其偏光片
JP5913077B2 (ja) * 2012-12-18 2016-04-27 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
CN203502607U (zh) * 2013-07-12 2014-03-26 南昌欧菲光学技术有限公司 透明基材及含有该透明基材的透明导电元件及光学器件
JP6537261B2 (ja) * 2014-12-09 2019-07-03 旭有機材株式会社 樹脂原料、フェノール樹脂及びアントラセン誘導体の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110040056A1 (en) * 2008-03-17 2011-02-17 Arimichi Okumura Process for production of polymer
JP2016112804A (ja) * 2014-12-16 2016-06-23 大日本印刷株式会社 反射防止物品及び美術品展示体
US20160370505A1 (en) * 2015-06-19 2016-12-22 Nam-il KOO Anti-reflective film, electronic device including the same, and apparatus for and method of manufacturing the same
US20170160453A1 (en) * 2015-12-02 2017-06-08 Samsung Electronics Co., Ltd. Antireflection film and organic light emitting display device including the same
US9905168B1 (en) * 2015-12-28 2018-02-27 Oculus Vr, Llc Luminance-based non-uniformity correction for display panels in head-mounted displays
US20190191560A1 (en) * 2016-08-17 2019-06-20 The University Of North Carolina At Chapel Hill Flexible conductive transparent films, articles and methods of making same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10705268B2 (en) * 2018-06-29 2020-07-07 Applied Materials, Inc. Gap fill of imprinted structure with spin coated high refractive index material for optical components
US20200284953A1 (en) * 2018-06-29 2020-09-10 Applied Materials, Inc. Gap fill of imprinted structure with spin coated high refractive index material for optical components
US20210107045A1 (en) * 2018-09-25 2021-04-15 Huawei Technologies Co., Ltd. Anti-Fingerprint Terminal Housing and Terminal
US11635622B1 (en) * 2018-12-07 2023-04-25 Meta Platforms Technologies, Llc Nanovided spacer materials and corresponding systems and methods
KR20220044564A (ko) 2019-08-09 2022-04-08 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 중합체, 조성물, 막형성용 조성물, 패턴형성방법, 절연막의 형성방법 및 화합물의 제조방법, 그리고 요오드함유 비닐폴리머 및 그의 아세틸화유도체의 제조방법
KR20230123513A (ko) 2020-12-21 2023-08-23 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 중합체, 조성물, 막형성용 조성물, 패턴의형성방법, 절연막의 형성방법 및 화합물의 제조방법
KR20250027629A (ko) 2022-06-28 2025-02-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 조성물, 수지 조성물, 막형성용 조성물, 패턴 형성방법 및 화합물
CN115616688A (zh) * 2022-09-08 2023-01-17 荣耀终端有限公司 减反射膜及其制造方法、电子设备
KR20250126726A (ko) 2022-12-20 2025-08-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물의 제조방법, 중합체, 조성물, 패턴 형성방법

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