US20180134847A1 - Polymers and resin composition employing the same - Google Patents
Polymers and resin composition employing the same Download PDFInfo
- Publication number
- US20180134847A1 US20180134847A1 US15/654,058 US201715654058A US2018134847A1 US 20180134847 A1 US20180134847 A1 US 20180134847A1 US 201715654058 A US201715654058 A US 201715654058A US 2018134847 A1 US2018134847 A1 US 2018134847A1
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- polymer
- repeating unit
- resin composition
- formula
- weight
- Prior art date
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- Granted
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- 229920000642 polymer Polymers 0.000 title claims abstract description 113
- 239000011342 resin composition Substances 0.000 title claims abstract description 56
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 15
- 239000003822 epoxy resin Substances 0.000 claims description 29
- 229920000647 polyepoxide Polymers 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000002904 solvent Substances 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 description 40
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 35
- 238000003756 stirring Methods 0.000 description 32
- 238000006243 chemical reaction Methods 0.000 description 24
- ICLCCFKUSALICQ-UHFFFAOYSA-N 1-isocyanato-4-(4-isocyanato-3-methylphenyl)-2-methylbenzene Chemical compound C1=C(N=C=O)C(C)=CC(C=2C=C(C)C(N=C=O)=CC=2)=C1 ICLCCFKUSALICQ-UHFFFAOYSA-N 0.000 description 20
- 239000000376 reactant Substances 0.000 description 18
- MEVBAGCIOOTPLF-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethoxy)naphthalen-2-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C=C1C=CC=2)=CC=C1C=2OCC1CO1 MEVBAGCIOOTPLF-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- 239000011521 glass Substances 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 229910002808 Si–O–Si Inorganic materials 0.000 description 10
- 238000002798 spectrophotometry method Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000000227 grinding Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 5
- 239000004744 fabric Substances 0.000 description 5
- 239000003365 glass fiber Substances 0.000 description 5
- ZXHZWRZAWJVPIC-UHFFFAOYSA-N 1,2-diisocyanatonaphthalene Chemical compound C1=CC=CC2=C(N=C=O)C(N=C=O)=CC=C21 ZXHZWRZAWJVPIC-UHFFFAOYSA-N 0.000 description 4
- PMAJUYHIXVFQIW-UHFFFAOYSA-N C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(C)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.CN.C[Y].C[Y][Y] Chemical compound C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(C)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.CN.C[Y].C[Y][Y] PMAJUYHIXVFQIW-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 0 *(c1c(cccc2)c2ccc1)c1cccc2c1cccc2 Chemical compound *(c1c(cccc2)c2ccc1)c1cccc2c1cccc2 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QNVUEOCPNCPHGU-UHFFFAOYSA-N C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y][Y].C[Y][Y][Y].C[Y][Y][Y][Y] Chemical compound C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y][Y].C[Y][Y][Y].C[Y][Y][Y][Y] QNVUEOCPNCPHGU-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- JIABEENURMZTTI-UHFFFAOYSA-N 1-isocyanato-2-[(2-isocyanatophenyl)methyl]benzene Chemical compound O=C=NC1=CC=CC=C1CC1=CC=CC=C1N=C=O JIABEENURMZTTI-UHFFFAOYSA-N 0.000 description 1
- VVNFVOQDXSXRGT-UHFFFAOYSA-N C.C.CCC(=O)C1=CC=C2C(=O)N(C3=C/C4=C(C=C(NC)C=C4)/C=C\3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y][Y].C[Y][Y][Y].C[Y][Y][Y][Y] Chemical compound C.C.CCC(=O)C1=CC=C2C(=O)N(C3=C/C4=C(C=C(NC)C=C4)/C=C\3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y][Y].C[Y][Y][Y].C[Y][Y][Y][Y] VVNFVOQDXSXRGT-UHFFFAOYSA-N 0.000 description 1
- DOWHCQGGUQLGBC-UHFFFAOYSA-N C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC4=C(C=C3)C=C(NC)C=C4)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y].C[Y][Y].C[Y][Y] Chemical compound C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC4=C(C=C3)C=C(NC)C=C4)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y].C[Y][Y].C[Y][Y] DOWHCQGGUQLGBC-UHFFFAOYSA-N 0.000 description 1
- ZAQOOWLJKYQUOH-UHFFFAOYSA-N C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y][Y] Chemical compound C.C.CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(C4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.CCC(=O)C1=CC=C2C(=O)N([Si](C)(C)O[Si](C)(C)O[Si](C)(C)NC)C(=O)C2=C1.C[Y].C[Y][Y] ZAQOOWLJKYQUOH-UHFFFAOYSA-N 0.000 description 1
- SFVKZZCGPTXBBQ-UHFFFAOYSA-N C1=CC=C2C(=C1)C=CC=C2CC1=CC=CC2=C1C=CC=C2.C1=CC=C2C=CC=CC2=C1.COCC1CC1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y] Chemical compound C1=CC=C2C(=C1)C=CC=C2CC1=CC=CC2=C1C=CC=C2.C1=CC=C2C=CC=CC2=C1.COCC1CC1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y] SFVKZZCGPTXBBQ-UHFFFAOYSA-N 0.000 description 1
- CIESDQMICOQJKX-UHFFFAOYSA-N C1=CC=C2C(=C1)C=CC=C2CC1=CC=CC2=C1C=CC=C2.C1=CC=C2C=CC=CC2=C1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y] Chemical compound C1=CC=C2C(=C1)C=CC=C2CC1=CC=CC2=C1C=CC=C2.C1=CC=C2C=CC=CC2=C1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.COCC1CO1.C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y].C[Y][Y][Y][Y][Y][Y][Y] CIESDQMICOQJKX-UHFFFAOYSA-N 0.000 description 1
- KMGMZKGTEPYQGV-UHFFFAOYSA-N CCC(=O)C1=CC=C2C(=O)N(C3=C/C4=C(C=C(NC)C=C4)/C=C\3)C(=O)C2=C1 Chemical compound CCC(=O)C1=CC=C2C(=O)N(C3=C/C4=C(C=C(NC)C=C4)/C=C\3)C(=O)C2=C1 KMGMZKGTEPYQGV-UHFFFAOYSA-N 0.000 description 1
- LPZPYKHQXYNODM-UHFFFAOYSA-N CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.C[Y][Y][Y].C[Y][Y][Y][Y] Chemical compound CCC(=O)C1=CC=C2C(=O)N(C3=CC=C(CC4=CC=C(NC)C=C4)C=C3)C(=O)C2=C1.C[Y][Y][Y].C[Y][Y][Y][Y] LPZPYKHQXYNODM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 siloxane compound Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
- C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
- C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
- C08K5/5455—Silicon-containing compounds containing nitrogen containing at least one group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
- H01B3/306—Polyimides or polyesterimides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/306—Resistant to heat
- B32B2307/3065—Flame resistant or retardant, fire resistant or retardant
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/10—Block- or graft-copolymers containing polysiloxane sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/08—Stabilised against heat, light or radiation or oxydation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0162—Silicon containing polymer, e.g. silicone
Definitions
- Taiwan Application Serial Number 105136829 filed on Nov. 11, 2016, the disclosure of which is hereby incorporated by reference herein in its entirety.
- the disclosure relates to a polymer and a resin composition employing the polymer.
- the trend in electronic products has been toward smaller sizes, lighter weights, higher speeds, and higher-frequency transmission. Therefore, the trend is toward high-density printed circuit boards.
- the ideal materials for use in printed circuit boards have a low dielectric constant (Dk) and a low dissipation factor (Df). Since the signal transmission rate is inversely proportional to the square root of the dielectric constant of the substrate material, a suitable substrate material is apt to have a relatively low dielectric constant. Furthermore, since the dissipation factor is directly proportional to the signal transmission loss, suitable substrate material is apt to have a relatively low dissipation factor in order to maintain transmission signal integrity.
- thermal-resistant and flame-retardant materials for use in semiconductor applications is gradually increasing.
- electronic materials are classified to comply with the UL 94V-0 standard.
- Conventional materials in a flame-retardant circuit board are mostly an epoxy resin system.
- an epoxy resin system employs a sufficient quantity of filler in order to enhance flame retardancy. Due to the great amount of filler, the adhesion between the epoxy resin layer and the copper foil may be decreased, thereby reducing the functionality and degrading the reliability of electronic products.
- An embodiment of the disclosure provides a polymer, wherein the polymer includes a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), wherein Y 1 and Y 2 are independently —H, —CH 3 , or —CH 2 CH 3 ; n is an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- the resin composition includes 100 parts by weight of polymer and 10-70 parts by weight of epoxy resin.
- the polymer includes a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), wherein Y 1 and Y 2 are independently —H, —CH 3 , or —CH 2 CH 3 ; n is an integer ranging from 1 to 25; and wherein the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- the epoxy resin is selected from a group consisting of a compound having a structure represented by Formula (V-I) and a compound having a structure represented by Formula (V-II), wherein Y 5 and Y 6 are independently —H, —CH 3 , or —CH 2 CH 3 ; Z is —CH 2 —, —C(CH 3 ) 2 —, or —O—; and Y 7 is —H, —CH 3 , or —CH 2 CH 3 .
- the polymer of the disclosure can include a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), arranged in a random fashion.
- Y 1 and Y 2 can be independently —H, —CH 3 , or —CH 2 CH 3 ; n can be an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- the polymer of the disclosure there are between 1 and 40 first repeating units and there are between 1 and 40 second repeating units.
- the polymer of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- the polymer of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), and a third repeating unit having a structure represented by Formula (III), arranged in a random fashion.
- Y 1 , Y 2 , Y 3 and Y 4 are independently of each other, and can be —H, —CH 3 , or —CH 2 CH 3 ;
- X can be —CH 2 —, —C(CH 3 ) 2 —, or —O—;
- n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, and the third repeating unit can be from 5:90:5 to 15:45:30.
- the polymer of the disclosure there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units, and there are between 1 and 40 third repeating units.
- the polymer of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- the polymer of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), a third repeating unit having a structure represented by Formula (III), and a fourth repeating unit having a structure represented by Formula (IV), arranged in a random fashion.
- Y 1 , Y 2 , Y 3 and Y 4 are independently of each other, and can be —H, —CH 3 , or —CH 2 CH 3 ;
- X can be —CH 2 —, —C(CH 3 ) 2 —, or —O—;
- n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, the third repeating unit and the fourth repeating unit can be from 5:85:5:5 to 15:45:30:10.
- the polymer of the disclosure there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units; there are between 1 and 40 third repeating units; and there are between 1 and 40 fourth repeating units.
- the polymer of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- the resin composition of the disclosure can include 100 parts by weight of the aforementioned polymer and 10-70 parts by weight of epoxy resin.
- the epoxy resin can be selected from a group consisting of a compound having a structure represented by Formula (V-I) and a compound having a structure represented by Formula (V-II)
- Y 5 , Y 6 and Y 7 are independently of each other, and can be —H, —CH 3 , or —CH 2 CH 3 ; and Z can be —CH 2 —, —C(CH 3 ) 2 —, or —O—.
- the polymer of the resin composition of the disclosure can include a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), arranged in a random fashion.
- Y 1 and Y 2 are independently of each other, and can be —H, —CH 3 , or —CH 2 CH 3 ; n can be an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- the polymer of the resin composition of the disclosure there are between 1 and 40 first repeating units and there are between 1 and 40 second repeating units.
- the polymer of the resin composition of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- the polymer of the resin composition of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), and a third repeating unit having a structure represented by Formula (III), arranged in a random fashion.
- Y 1 , Y 2 , Y 3 and Y 4 are independently of each other, and can be —H, —CH 3 , or —CH 2 CH 3 ;
- X can be —CH 2 —, —C(CH 3 ) 2 —, or —O—;
- n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, and the third repeating unit can be from 5:90:5 to 15:45:30.
- the polymer of the resin composition of the disclosure there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units; and there are between 1 and 40 third repeating units.
- the polymer of the resin composition of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- the polymer of the resin composition of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), a third repeating unit having a structure represented by Formula (III), and a fourth repeating unit having a structure represented by Formula (IV), arranged in a random fashion.
- Y 1 , Y 2 , Y 3 and Y 4 are independently of each other, and can be —H, —CH 3 , or —CH 2 CH 3 ;
- X can be —CH 2 —, —C(CH 3 ) 2 —, or —O—;
- n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, the third repeating unit, and the fourth repeating unit can be from 5:85:5:5 to 15:45:30:10.
- the polymer of the resin composition of the disclosure there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units; there are between 1 and 40 third repeating units; and there are between 1 and 40 fourth repeating units.
- the polymer of the resin composition of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- the resin composition of the disclosure may additionally include a solvent.
- the choice of the solvent is unlimited and the solvent can be selected corresponding to the polymer and the epoxy resin.
- the solvent can be acetone, methyl ethyl ketone, 1-methoxy-2-propanol, 1,2-Propanediol monomethyl ether acetate, toluene, xylene, dimethylformamide (DMF), dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO) or a combination thereof.
- the resin composition of the disclosure may further include an inorganic powder, wherein the inorganic powder can be present in an amount equal to or less than 50 parts by weight.
- the inorganic powder of the disclosure can be silicon oxide, aluminum oxide, magnesium oxide or a combination thereof.
- the inorganic powder can have an average particle size from about 5 ⁇ m to 12 ⁇ m.
- Tg glass transition temperature
- Td5% 5% thermal decomposition temperature
- xy-CTE The coefficient of thermal expansion in both the X and Y directions (xy-CTE) was determined by thermal mechanical analyzer (TMA) (TA Instrument, model Q400) according to IPC-TM-650.2.4.24 standard test.
- TMA thermal mechanical analyzer
- Dk dielectric constant (abbreviated as Dk in the PCB (printed circuit board) field).
- Df dissipation factor (abbreviated as Df in the PCB (printed circuit board) field).
- Number average molecular weight the number average molecular weight of polymer was determined by Gel permeation chromatography (GPC) sold by TAIAN TECH.
- TMA trimellitic anhydride, available from Fu-Pao Chemical Co.
- TODI bitolylene diisocyanate, available from Char-Deng agent.
- MDI methylene diphenyl isocyanate, available from Fu-Pao Chemical Co.
- NDI 2,6-naphthalene diisocyanate, available from Char-Deng agent.
- X-22-161A (with a weight-average molecular weight of about 850), X-22-161B (with a weight-average molecular weight of about 1000) and KF-8012 (with a weight-average molecular weight of about 5000): amine-containing siloxane having a structure represented by
- R 1 , R 2 , and R 3 are alkyl, and n 1 >1), available from Shin-Etsu Chemical Co., Ltd.
- Epoxy resin HP-4032D naphthalene type epoxy, available from DIC Corporation.
- Epoxy resin 6000 naphthalene type epoxy, available from DIC Corporation.
- Epoxy resin 828 bisphenol A type epoxy, available from Changchun resin Corporation.
- Epoxy resin 202 novolac resin, available from Chang-Yi agent. Silicon dioxide: having an average particle size of about 12 ⁇ m, available from Tatsumori LTD.
- Polymer (A1) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO) 2 NH), 1258 cm ⁇ 1 (absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (absorption peak of Si—O—Si).
- Polymer (A2) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A3) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO) 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A4) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A5) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A6) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A7) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO) 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A8) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A9) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO) 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- Polymer (A10) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm ⁇ 1 (absorption peak of —NH), 1775 cm ⁇ 1 and 1713 cm ⁇ 1 (absorption peak of —(CO) 2 NH), 1258 cm ⁇ 1 (Absorption peak of —Si—CH 3 ), and 1080 cm ⁇ 1 (Absorption peak of —Si—O—Si).
- the polymer of the disclosure exhibits low dielectric constant and low coefficient of thermal expansion.
- Polymers (A11) and (A12) prepared from Comparative Examples 1 and 2 exhibit relatively high dielectric constant and coefficient of thermal expansion in comparison with the polymer prepared from Examples of the disclosure. Due to the high viscosity, the characteristics of Polymers (A13)-(A15) prepared from Comparative Examples 3-5 cannot be measured. Since solid particles were formed after the preparation of Polymer (A16) prepared from Comparative Example 6, the characteristics of Polymer (A16) prepared from Comparative Example 6 cannot be measured.
- the solution including 80 parts by weight of polymer (A3) and 20 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (I) was obtained. The components and characteristics of Resin composition (I) are shown in Table 3.
- Resin composition (III) The components and characteristics of Resin composition (III) are shown in Table 3.
- the solution including 40 parts by weight of polymer (A3) and 60 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (VI) was obtained. The components and characteristics of Resin composition (VI) are shown in Table 3.
- the solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin 828 was added into the reaction bottle. After stirring, Resin composition (VII) was obtained. The components and characteristics of Resin composition (VII) are shown in Table 3.
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- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
- The application is based on, and claims priority from, Taiwan Application Serial Number 105136829, filed on Nov. 11, 2016, the disclosure of which is hereby incorporated by reference herein in its entirety.
- The disclosure relates to a polymer and a resin composition employing the polymer.
- The trend in electronic products has been toward smaller sizes, lighter weights, higher speeds, and higher-frequency transmission. Therefore, the trend is toward high-density printed circuit boards. In order to maintain transmission rate and transmission signal integrity, the ideal materials for use in printed circuit boards have a low dielectric constant (Dk) and a low dissipation factor (Df). Since the signal transmission rate is inversely proportional to the square root of the dielectric constant of the substrate material, a suitable substrate material is apt to have a relatively low dielectric constant. Furthermore, since the dissipation factor is directly proportional to the signal transmission loss, suitable substrate material is apt to have a relatively low dissipation factor in order to maintain transmission signal integrity.
- In addition, the need for thermal-resistant and flame-retardant materials for use in semiconductor applications is gradually increasing. For example, electronic materials are classified to comply with the UL 94V-0 standard. Conventional materials in a flame-retardant circuit board are mostly an epoxy resin system. In general, an epoxy resin system employs a sufficient quantity of filler in order to enhance flame retardancy. Due to the great amount of filler, the adhesion between the epoxy resin layer and the copper foil may be decreased, thereby reducing the functionality and degrading the reliability of electronic products.
- Accordingly, there is a need for a novel resin composition to meet the requirements of high thermal resistance and low dielectric constant, for high frequency circuit boards.
- An embodiment of the disclosure provides a polymer, wherein the polymer includes a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), wherein Y1 and Y2 are independently —H, —CH3, or —CH2CH3; n is an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- Another embodiment of the disclosure provides a resin composition. The resin composition includes 100 parts by weight of polymer and 10-70 parts by weight of epoxy resin. The polymer includes a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), wherein Y1 and Y2 are independently —H, —CH3, or —CH2CH3; n is an integer ranging from 1 to 25; and wherein the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45. The epoxy resin is selected from a group consisting of a compound having a structure represented by Formula (V-I) and a compound having a structure represented by Formula (V-II), wherein Y5 and Y6 are independently —H, —CH3, or —CH2CH3; Z is —CH2—, —C(CH3)2—, or —O—; and Y7 is —H, —CH3, or —CH2CH3.
- A detailed description is given in the following embodiments.
- In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details.
- According to embodiments of the disclosure, the polymer of the disclosure can include a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), arranged in a random fashion.
- In Formula (I) and Formula (II), Y1 and Y2 can be independently —H, —CH3, or —CH2CH3; n can be an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- According to embodiments of the disclosure, in the polymer of the disclosure, there are between 1 and 40 first repeating units and there are between 1 and 40 second repeating units.
- According to embodiments of the disclosure, the polymer of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- According to embodiments of the disclosure, the polymer of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), and a third repeating unit having a structure represented by Formula (III), arranged in a random fashion.
- In the Formula (I), Formula (II), and Formula (III), Y1, Y2, Y3 and Y4 are independently of each other, and can be —H, —CH3, or —CH2CH3; X can be —CH2—, —C(CH3)2—, or —O—; n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, and the third repeating unit can be from 5:90:5 to 15:45:30.
- According to embodiments of the disclosure, in the polymer of the disclosure, there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units, and there are between 1 and 40 third repeating units.
- According to embodiments of the disclosure, the polymer of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- According to embodiments of the disclosure, the polymer of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), a third repeating unit having a structure represented by Formula (III), and a fourth repeating unit having a structure represented by Formula (IV), arranged in a random fashion.
- In the Formula (I), Formula (II), and Formula (III), Y1, Y2, Y3 and Y4 are independently of each other, and can be —H, —CH3, or —CH2CH3; X can be —CH2—, —C(CH3)2—, or —O—; n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, the third repeating unit and the fourth repeating unit can be from 5:85:5:5 to 15:45:30:10.
- According to embodiments of the disclosure, in the polymer of the disclosure, there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units; there are between 1 and 40 third repeating units; and there are between 1 and 40 fourth repeating units.
- According to embodiments of the disclosure, the polymer of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- According to embodiments of the disclosure, the resin composition of the disclosure can include 100 parts by weight of the aforementioned polymer and 10-70 parts by weight of epoxy resin. The epoxy resin can be selected from a group consisting of a compound having a structure represented by Formula (V-I) and a compound having a structure represented by Formula (V-II)
- In Formula (V-I) and Formula (V-II), Y5, Y6 and Y7 are independently of each other, and can be —H, —CH3, or —CH2CH3; and Z can be —CH2—, —C(CH3)2—, or —O—.
- According to embodiments of the disclosure, the polymer of the resin composition of the disclosure can include a first repeating unit having a structure represented by Formula (I) and a second repeating unit having a structure represented by Formula (II), arranged in a random fashion.
- In Formula (I) and Formula (II), Y1 and Y2 are independently of each other, and can be —H, —CH3, or —CH2CH3; n can be an integer ranging from 1 to 25; and the molar ratio of the first repeating unit to the second repeating unit is from 5:95 to 15:45.
- According to embodiments of the disclosure, in the polymer of the resin composition of the disclosure, there are between 1 and 40 first repeating units and there are between 1 and 40 second repeating units.
- According to embodiments of the disclosure, the polymer of the resin composition of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- According to embodiments of the disclosure, the polymer of the resin composition of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), and a third repeating unit having a structure represented by Formula (III), arranged in a random fashion.
- In the Formula (I), Formula (II), and Formula (III), Y1, Y2, Y3 and Y4 are independently of each other, and can be —H, —CH3, or —CH2CH3; X can be —CH2—, —C(CH3)2—, or —O—; n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, and the third repeating unit can be from 5:90:5 to 15:45:30.
- According to embodiments of the disclosure, in the polymer of the resin composition of the disclosure, there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units; and there are between 1 and 40 third repeating units.
- According to embodiments of the disclosure, the polymer of the resin composition of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- According to embodiments of the disclosure, the polymer of the resin composition of the disclosure can include a first repeating unit having a structure represented by Formula (I), a second repeating unit having a structure represented by Formula (II), a third repeating unit having a structure represented by Formula (III), and a fourth repeating unit having a structure represented by Formula (IV), arranged in a random fashion.
- In the Formula (I), Formula (II), and Formula (III), Y1, Y2, Y3 and Y4 are independently of each other, and can be —H, —CH3, or —CH2CH3; X can be —CH2—, —C(CH3)2—, or —O—; n can be an integer ranging from 1 to 25; and the molar ratio between the first repeating unit, the second repeating unit, the third repeating unit, and the fourth repeating unit can be from 5:85:5:5 to 15:45:30:10.
- According to embodiments of the disclosure, in the polymer of the resin composition of the disclosure, there are between 1 and 40 first repeating units; there are between 1 and 40 second repeating units; there are between 1 and 40 third repeating units; and there are between 1 and 40 fourth repeating units.
- According to embodiments of the disclosure, the polymer of the resin composition of the disclosure can have a number average molecular weight of from about 8,000 to about 15,000.
- According to embodiments of the disclosure, the resin composition of the disclosure may additionally include a solvent. The choice of the solvent is unlimited and the solvent can be selected corresponding to the polymer and the epoxy resin. For example, the solvent can be acetone, methyl ethyl ketone, 1-methoxy-2-propanol, 1,2-Propanediol monomethyl ether acetate, toluene, xylene, dimethylformamide (DMF), dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO) or a combination thereof.
- According to embodiments of the disclosure, the resin composition of the disclosure may further include an inorganic powder, wherein the inorganic powder can be present in an amount equal to or less than 50 parts by weight. The inorganic powder of the disclosure can be silicon oxide, aluminum oxide, magnesium oxide or a combination thereof. The inorganic powder can have an average particle size from about 5 μm to 12 μm.
- Below, exemplary embodiments are described in detail so as to be easily realized by a person having ordinary knowledge in the art. The inventive concept may be embodied in various forms without being limited to the exemplary embodiments set forth herein. Descriptions of well-known parts are omitted for clarity, and like reference numerals refer to like elements throughout
- The equipment and method for measuring the characteristics of the products disclosed in following Examples are listed below:
- Tg: glass transition temperature.
- Td5%: 5% thermal decomposition temperature.
- xy-CTE: The coefficient of thermal expansion in both the X and Y directions (xy-CTE) was determined by thermal mechanical analyzer (TMA) (TA Instrument, model Q400) according to IPC-TM-650.2.4.24 standard test.
- Dk: dielectric constant (abbreviated as Dk in the PCB (printed circuit board) field).
- Df: dissipation factor (abbreviated as Df in the PCB (printed circuit board) field).
- Number average molecular weight: the number average molecular weight of polymer was determined by Gel permeation chromatography (GPC) sold by TAIAN TECH.
- The chemicals used in the Examples and Comparative Examples were obtained from the following sources.
- TMA: trimellitic anhydride, available from Fu-Pao Chemical Co.
- PMDA: pyromellitic dianhydride.
- TODI: bitolylene diisocyanate, available from Char-Deng agent.
- MDI: methylene diphenyl isocyanate, available from Fu-Pao Chemical Co.
- NDI: 2,6-naphthalene diisocyanate, available from Char-Deng agent.
- X-22-161A (with a weight-average molecular weight of about 850), X-22-161B (with a weight-average molecular weight of about 1000) and KF-8012 (with a weight-average molecular weight of about 5000): amine-containing siloxane having a structure represented by
- (wherein R1, R2, and R3 are alkyl, and n1>1), available from Shin-Etsu Chemical Co., Ltd.
- Epoxy resin HP-4032D: naphthalene type epoxy, available from DIC Corporation.
- Epoxy resin 6000: naphthalene type epoxy, available from DIC Corporation.
- Epoxy resin 828: bisphenol A type epoxy, available from Changchun resin Corporation.
- Epoxy resin 202: novolac resin, available from Chang-Yi agent. Silicon dioxide: having an average particle size of about 12 μm, available from Tatsumori LTD.
- Polymer preparation
- 100 g of TMA, 129 g of TODI, 21 g of X-22-161A, and 676 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A1) having a number average molecular weight of about 9,000. The reactants and characteristics of Polymer (A1) are shown in Table 1.
- Polymer (A1) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO)2NH), 1258 cm−1 (absorption peak of —Si—CH3), and 1080 cm−1 (absorption peak of Si—O—Si).
- 100 g of TMA, 129 g of TODI, 39 g of X-22-161B, and 725 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A2) having a number average molecular weight of about 11,000. The reactants and characteristics of Polymer (A2) are shown in Table 1.
- Polymer (A2) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 98 g of TODI, 30 g of MDI, 21 g of X-22-161A, and 673 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A3) having a number average molecular weight of about 9,200. The reactants and characteristics of Polymer (A3) are shown in Table 1.
- Polymer (A3) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO)2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 98 g of TODI, 30 g of MDI, 39 g of X-22-161B, and 725 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A4) having a number average molecular weight of about 10,500. The reactants and characteristics of Polymer (A4) are shown in Table 1.
- Polymer (A4) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 81 g of TODI, 52 g of MDI, 21 g of X-22-161A, and 687 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A5) having a number average molecular weight of about 9,100. The reactants and characteristics of Polymer (A5) are shown in Table 1.
- Polymer (A5) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 81 g of TODI, 52 g of MDI, 39 g of X-22-161B, and 735 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A6) having a number average molecular weight of about 12,000. The reactants and characteristics of Polymer (A6) are shown in Table 1.
- Polymer (A6) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 91 g of TODI, 30 g of MDI, 41 g of X-22-161A, and 708 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A7) having a number average molecular weight of about 9,350. The reactants and characteristics of Polymer (A7) are shown in Table 1.
- Polymer (A7) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO)2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 95 g of TMA, 6 g of PMDA, 98 g of TODI, 30 g of MDI, 21 g of X-22-161A, and 673 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A8) having a number average molecular weight of about 9,210. The reactants and characteristics of Polymer (A8) are shown in Table 1.
- Polymer (A8) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 90 g of TMA, 11 g of PMDA, 98 g of TODI, 30 g of MDI, 21 g of X-22-161A, and 673 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A9) having a number average molecular weight of about 9,480. The reactants and characteristics of Polymer (A9) are shown in Table 2.
- Polymer (A9) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO)2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 70 g of TODI, 30 g of MDI, 22 g of NDI, 21 g of X-22-161A, and 657 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A10) having a number average molecular weight of about 9,520. The reactants and characteristics of Polymer (A10) are shown in Table 2.
- Polymer (A10) was analyzed by infrared (IR) spectrophotometry and the result is shown below: 3330 cm−1 (absorption peak of —NH), 1775 cm−1 and 1713 cm−1 (absorption peak of —(CO)2NH), 1258 cm−1 (Absorption peak of —Si—CH3), and 1080 cm−1 (Absorption peak of —Si—O—Si).
- 100 g of TMA, 104 g of TODI, 30 g of MDI, and 632 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A11). The reactants and characteristics of Polymer (A11) are shown in Table 2.
- 100 g of TMA, 47 g of TODI, 78 g of MDI, 21g of X-22-161A, and 665 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A12). The reactants and characteristics of Polymer (A12) are shown in Table 2.
- 100 g of TMA, 77 g of TODI, 30 g of MDI, 83 g of X-22-161A, and 784 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A13). The reactants and characteristics of Polymer (A13) are shown in Table 2.
- 100 g of TMA, 77 g of TODI, 30 g of MDI, 155 g of X-22-161B, and 978 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A14). The reactants and characteristics of Polymer (A14) are shown in Table 2.
- 80 g of TMA, 23 g of PMDA, 98 g of TODI, 30 g of MDI, 21 g of X-22-161A, and 740 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A15). The reactants and characteristics of Polymer (A15) are shown in Table 2.
- 100 g of TMA, 98 g of TODI, 30 g of MDI, 21 g of X-22-161A, 57 g of KF-8012, and 740 g of dimethylacetamide (DMAc) (as solvent) were added to a 1,000 ml three-neck glass reactor and uniformly stirred using a two-impeller stir bar at 90-150° C. After reacting completely, the reactor was cooled to room temperature, obtaining a solution including Polymer (A16). The reactants and characteristics of Polymer (A16) are shown in Table 2.
-
TABLE 1 Exam- Exam- Exam- Exam- Exam- Exam- Exam- Exam- ple 1 ple 2 ple 3 ple 4 ple 5 ple 6 ple 7 ple 8 Reactant acid TMA 100 g 100 g 100 g 100 g 100 g 100 g 100 g 95 g anhydride PMDA — — — — — — — 6 g isocyanate TODI 129 g 129 g 98 g 98 g 81 g 81 g 91 g 98 g MDI — — 30 g 30 g 52 g 52 g 30 g 30 g NDI — — — — — — — — siloxane X-22-161A 21 g — 21 g — 21 g — 41 g 21 g compound X-22-161B — 39 g — 39 g — 39 g — — DMAc (solvent) 676 725 673 725 687 735 708 673 product polymer A1 A2 A3 A4 A5 A6 A7 A8 m1/m2/m3/m4 5/95/ 5/95/ 5/72/ 5/72/ 5/55/ 5/55/ 10/67/ 5/72/ (molar ratio*) 0/0 0/0 23/0 23/0 40/0 40/0 23/0 23/0 characteristics Tg (° C.) 275 270 266 260 254 248 235 268 Td5%(° C.) 435 431 428 422 411 416 441 436 xy-CTE 15 13 18 16 25 21 16 6 (ppm/° C.) Dk 3.3 3.25 3.41 3.37 3.5 3.48 3.21 3.07 Df 0.019 0.019 0.013 0.011 0.018 0.017 0.0091 0.0088 *molar ratio “m1/m2/m3/m4” means the ratio between the number of first repeating unit, the number of second repeating unit, the number of third repeating unit, and the number of fourth repeating unit. -
TABLE 2 Com- Com- Com- Com- Com- Com- parative parative parative parative parative parative Exam- Exam- Exam- Exam- Exam- Exam- Exam- Exam- ple 9 ple 10 ple 1 ple 2 ple 3 ple 4 ple 5 ple 6 Reactant acid TMA 90 g 100 g 100 g 100 g 100 g 100 g 80 g 100 g anhydride PMDA 11 g — — — — — 23 g — isocyanate TODI 98 g 70 g 104 g 47 g 77 g 77 g 98 g 98 g MDI 30 g 30 g 30 g 78 g 30 g 30 g 30 g 30 g NDI — 22 g — — — — — — siloxane X-22-161A 21 g 21 g — 21 g 83 g — 21 g 21 g compound X-22-161B — — — — — 155 g — — KF-8012 57 g DMAc (solvent) 673 657 632 665 784 978 740 740 product polymer A9 A10 A11 A12 A13 A14 A15 A16 m1/m2/m3/m4 5/72/ 5/62/ 0/78/ 5/35/ 20/57/ 20/57/ 5/72/ 5/72/ (molar ratio) 23/0 23/10 22/0 60/0 23/0 23/0 23/0 23/0 characteristics Tg (° C.) 261 263 278 268 — — — — Td5%(° C.) 438 425 420 401 — — — — xy-CTE 4 17 30 56 — — — — (ppm/° C.) Dk 3.01 3.37 3.6 3.8 — — — — Df 0.0088 0.011 0.029 0.021 — — — — - As shown in Table 1 and Table 2, due to the specific amounts of the acid anhydride, isocyanate and siloxane compound, the polymer of the disclosure exhibits low dielectric constant and low coefficient of thermal expansion.
- Polymers (A11) and (A12) prepared from Comparative Examples 1 and 2 exhibit relatively high dielectric constant and coefficient of thermal expansion in comparison with the polymer prepared from Examples of the disclosure. Due to the high viscosity, the characteristics of Polymers (A13)-(A15) prepared from Comparative Examples 3-5 cannot be measured. Since solid particles were formed after the preparation of Polymer (A16) prepared from Comparative Example 6, the characteristics of Polymer (A16) prepared from Comparative Example 6 cannot be measured.
- Preparation of Resin Composition
- The solution including 80 parts by weight of polymer (A3) and 20 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (I) was obtained. The components and characteristics of Resin composition (I) are shown in Table 3.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (II) was obtained. The components and characteristics of Resin composition (II) are shown in Table 3.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin 6000 was added into the reaction bottle. After stirring, Resin composition (III) was obtained. The components and characteristics of Resin composition (III) are shown in Table 3.
- The solution including 80 parts by weight of polymer (A9) and 20 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (IV) was obtained. The components and characteristics of Resin composition (IV) are shown in Table 3.
- The solution including 60 parts by weight of polymer (A9) and 40 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (V) was obtained. The components and characteristics of Resin composition (V) are shown in Table 3.
- The solution including 40 parts by weight of polymer (A3) and 60 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. After stirring, Resin composition (VI) was obtained. The components and characteristics of Resin composition (VI) are shown in Table 3.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin 828 was added into the reaction bottle. After stirring, Resin composition (VII) was obtained. The components and characteristics of Resin composition (VII) are shown in Table 3.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin 202 was added into the reaction bottle. After stirring, Resin composition (VIII) was obtained. The components and characteristics of Resin composition (VIII) are shown in Table 3.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. Next, 10 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, Resin composition (IX) was obtained. The components and characteristics of Resin composition (IX) are shown in Table4.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. Next, 30 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, Resin composition (X) was obtained. The components and characteristics of Resin composition (X) are shown in Table 4.
- The solution including 60 parts by weight of polymer (A9) and 40 parts by weight of epoxy resin HP-4032D were added into the reaction bottle. Next, 10 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, Resin composition (XI) was obtained. The components and characteristics of Resin composition (XI) are shown in Table 4.
- The solution including 60 parts by weight of polymer (A9) and 40 parts by weight of epoxy resin HP-4032D were added into the reaction bottle. Next, 30 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, Resin composition (XII) was obtained. The components and characteristics of Resin composition (XII) are shown in Table 4.
- Preparation of Composite Material
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin HP-4032D was added into the reaction bottle. Next, 10 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, a resin composition was obtained. Next, a glass fiber cloth was immersed in the resin composition. After laminating, heating at 200° C., and pressurizing for 3 hr, Composite material (I) was obtained. The components and characteristics of Composite material (I) are shown in Table 4.
- The solution including 60 parts by weight of polymer (A3) and 40 parts by weight of epoxy resin HP-4032D were added into the reaction bottle. Next, 30 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, a resin composition was obtained. Next, a glass fiber cloth was immersed in the resin composition. After laminating, heating at 200° C., and pressurizing for 3 hr, Composite material (II) was obtained. The components and characteristics of Composite material (II) are shown in Table 4.
- The solution including 60 parts by weight of polymer (A9) and 40 parts by weight of epoxy resin HP-4032D were added into the reaction bottle. Next, 10 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, a resin composition was obtained. Next, a glass fiber cloth was immersed in the resin composition. After laminating, heating at 200° C., and pressurizing for 3 hr, Composite material (III) was obtained. The components and characteristics of Composite material (III) are shown in Table 4.
- The solution including 60 parts by weight of polymer (A9) and 40 parts by weight of epoxy resin HP-4032D were added into the reaction bottle. Next, 30 parts by weight of silicon dioxide was added into the reaction bottle. After grinding and stirring, a resin composition was obtained. Next, a glass fiber cloth was immersed in the resin composition. After laminating, heating at 200° C., and pressurizing for 3 hr, Composite material (IV) was obtained. The components and characteristics of Composite material (IV) are shown in Table 4.
-
TABLE 3 Com- Com- Com- parative parative parative Exam- Exam- Exam- Exam- Exam- Exam- Exam- Exam- ple 11 ple 12 ple 13 ple 14 ple 15 ple 7 ple 8 ple 9 component polymer A3 80 60 60 — — 40 60 60 A9 — — — 80 60 — — — epoxy HP-4032D 20 40 — 20 40 60 — — resin 6000 — — 40 — — — — — 828 — — — — — — 40 — 202 — — — — — — — 40 filler SiO2 — — — — — — — — characteristics Tg (° C.) 237 215 219 242 225 186 190 178 Td5%(° C.) 415 402 405 422 412 378 385 377 xy-CTE 22 25 26 9 12 42 48 53 (ppm/° C.) Dk 3.45 3.5 3.51 3.15 3.22 4.12 3.91 4.03 Df 0.011 0.012 0.014 0.010 0.013 0.024 0.018 0.022 -
TABLE 4 Exam- Exam- Exam- Exam- Exam- Exam- Exam- Exam- ple 16 ple 17 ple 18 ple 19 ple 20 ple 21 ple 22 ple 23 component polymer A3 60 60 — — 60 60 — A9 — — 60 60 — — 60 60 epoxy HP-4032D 40 40 40 40 40 40 40 40 resin 6000 — — — — — — — — 828 — — — — — — — — 202 — — — — — — — — filler SiO2 10 30 10 30 10 30 10 30 substrate glass fiber — — — — ◯ ◯ ◯ ◯ cloth characteristics Tg (° C.) 215 218 231 235 216 228 218 231 Td5% (° C.) 409 410 417 422 408 415 411 420 xy-CTE 18 9 10 6 17 8 7 4 (ppm/° C.) Dk 3.45 3.02 3.12 3.05 3.43 3.17 3.01 2.98 Df 0.013 0.011 0.014 0.010 0.012 0.010 0.0091 0.0089 - It will be clear that various modifications and variations can be made to the disclosed methods and materials. It is intended that the specification and examples be considered as exemplary only, with the true scope of the disclosure being indicated by the following claims and their equivalents.
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| JP2004211055A (en) * | 2002-11-15 | 2004-07-29 | Hitachi Chem Co Ltd | Method of producing polyamide-imide, polyamide-imide and thermosetting resin composition |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201817779A (en) | 2018-05-16 |
| TWI614285B (en) | 2018-02-11 |
| CN108070085B (en) | 2021-01-15 |
| JP2018076504A (en) | 2018-05-17 |
| US10626219B2 (en) | 2020-04-21 |
| CN108070085A (en) | 2018-05-25 |
| JP6637016B2 (en) | 2020-01-29 |
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