US20150236073A1 - Organic light emitting device and fabricating method thereof - Google Patents
Organic light emitting device and fabricating method thereof Download PDFInfo
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- US20150236073A1 US20150236073A1 US14/284,403 US201414284403A US2015236073A1 US 20150236073 A1 US20150236073 A1 US 20150236073A1 US 201414284403 A US201414284403 A US 201414284403A US 2015236073 A1 US2015236073 A1 US 2015236073A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H01L27/3213—
-
- H01L51/56—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- the invention relates to a light emitting device and a fabricating method thereof, and particularly relates to an organic light emitting device and a fabricating method thereof.
- organic light emitting devices Due to the advantages like self-luminescence, no viewing-angle dependence, low power consumption, simple fabrication, low costs, low working temperature, high response speed, and full-color display, organic light emitting devices (OLED) have a great potential of application and are likely to become the mainstream of the illuminating light source of flat display panels in the next generation.
- OLED organic light emitting devices
- the full color technology commonly applied in the OLED display panels includes the technology of side-by-side arrangement of red, green, and blue (RGB) pixels and the technology of white light OLED as a light source in combination with color filter layer.
- the technology of side-by-side arrangement of the RGB pixels provides light formed of light respectively emitted from the red, blue, and green pixels.
- RGB red, green, and blue
- a preferable degree of color saturation and lower power consumption are achieved.
- the technology suffers from being difficult to obtain a broader color gamut and being difficult to align a mask.
- the technology of white light OLED as a light source in combination with color filter layer uses a color filter to filter out the three prime colors, which are colors of red, blue, and green.
- the invention provides a fabricating method of an organic light emitting device.
- the organic light emitting device fabricated accordingly has a preferable light emitting efficiency.
- the invention also provides an organic light emitting device that has a preferable light emitting efficiency.
- the fabricating method of the organic light emitting device of the invention includes the following steps.
- a substrate having a first pixel region, a second pixel region, a third pixel region, and a fourth pixel region is provided.
- a first lower pixel electrode, a second lower pixel electrode, a third lower pixel electrode, and a fourth lower pixel electrode are respectively formed in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region.
- a first interlayer is formed in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region by using a first ink-jet printing process.
- the first interlayer is respectively located on the first lower pixel electrode, the second lower pixel electrode, the third lower pixel electrode, and the fourth lower pixel electrode.
- a second ink-jet printing process is performed to form a first color pattern on the first interlayer in the first pixel region, a second color pattern on the first interlayer in the second pixel region, and a third color pattern on the first interlayer in the third pixel region.
- a fourth color layer is formed to cover the first color pattern, the second color pattern, and the third color pattern, and to cover the first interlayer in the fourth pixel region.
- colors of the first color pattern, the second color pattern, the third color pattern, and the fourth color layer are different from each other.
- An upper pixel electrode is formed on the fourth color layer.
- a color filter is arranged over the upper pixel electrode.
- the color filter has a first filter pattern, a second filter pattern, a third filter pattern, and a fourth filter pattern
- the first filter pattern is disposed in correspondence with the first pixel region and filters light corresponding to the first color pattern out
- the second filter pattern is disposed in correspondence with the second pixel region and filters light corresponding to the second color pattern out
- the third filter pattern is disposed in correspondence with the third pixel region and filters light corresponding to the third color pattern and the fourth color layer out
- the fourth filter pattern is disposed in correspondence with the fourth pixel region and filters the light corresponding to the fourth color layer out.
- the organic light emitting device of the invention includes a substrate, a first lower pixel electrode, a second lower pixel electrode, a third lower pixel electrode, a fourth lower pixel electrode, a first interlayer, a first color pattern, a second color pattern, a third color pattern, a fourth color layer, an upper pixel electrode, and a color filter.
- An isolation structure is disposed on the substrate to define a first pixel region, a second pixel region, a third pixel region, and a fourth pixel region separated from each other on the substrate.
- the first lower pixel electrode, the second lower pixel electrode, the third lower pixel electrode, and the fourth lower pixel electrode are respectively located in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region.
- the first interlayer is disposed in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region, and located on the first lower pixel electrode, the second lower pixel electrode, the third lower pixel electrode, and the fourth lower pixel electrode.
- the first color pattern, the second color pattern, and the third color pattern are respectively disposed on the first interlayer in the first pixel region, the first interlayer in the second pixel region, and the first interlayer in the third pixel region.
- the fourth color layer is disposed on the first color pattern, the second color pattern, the third color pattern, and the first interlayer in the fourth pixel region, and covers the isolation structure.
- the upper pixel electrode is located on the fourth color layer.
- the color filter is arranged over the upper pixel electrode.
- the color filter has the first filter pattern, the second filter pattern, the third filter pattern, and the fourth filter pattern, the first filter pattern is disposed in correspondence with the first pixel region and filters light corresponding to the first color pattern out, the second filter pattern is disposed in correspondence with the second pixel region and filters light corresponding to the second color pattern out, the third filter pattern is disposed in correspondence with the third pixel region and filters light corresponding to the third color pattern and the fourth color layer out, and the fourth filter pattern is disposed in correspondence with the fourth pixel region and filters the light corresponding to the fourth color layer out.
- a first color light is emitted corresponding to the first pixel region
- a second color light is emitted corresponding to the second pixel region
- a third color light is emitted corresponding to the third pixel region
- a fourth color light is emitted corresponding to the fourth pixel region.
- the first color light is red light
- the second color light is green light
- the fourth color light is blue light
- the first color pattern is a red pattern
- the second color pattern is a green pattern
- the third color pattern is a yellow pattern
- the fourth color layer is a blue layer.
- the first color pattern includes a first color material
- the second color pattern includes a second color material
- the third color pattern includes the first color material and the second color material
- an isolation structure is disposed on the substrate to define the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region separated from each other.
- the fourth color layer is formed on the isolation structure.
- the methods of forming the fourth color layer and the upper pixel electrode are evaporation.
- the first interlayer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
- a thickness of the first interlayer is between 10 nm to 100 nm.
- a second interlayer is further formed between the fourth color layer and the upper pixel electrode.
- a forming process of the second interlayer is evaporation.
- the second interlayer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
- forming a charge generation layer located between the first, second, and third color patterns and the fourth color layer, and located between the first interlayer of the fourth pixel region and the fourth color layer is further included.
- the method of forming the charge generation layer comprises evaporation.
- a third interlayer is further formed, located between the charge generation layer and the first, second, and third color patterns, and located between the charge generation layer and the first interlayer on the fourth pixel region is further included.
- the third interlayer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
- forming a fourth interlayer located between the charge generation layer and the fourth color layer is further included.
- the fourth interlayer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
- upper surfaces of the first color pattern, the second color pattern, and the third color pattern are lower than an upper surface of the isolation structure.
- the color filter further includes a plurality of shielding patterns, located between the first filter pattern, the second filter pattern, the third filter pattern, and the fourth filter pattern.
- the ink-jet printing process is used to fabricate the first, second, and third color patterns in the first, second, and third pixel regions respectively, and then to form the fourth color layer on the fourth pixel region and each of the color patterns.
- the first, second, and fourth pixel regions of the organic light emitting device emit light of different colors
- the third pixel region emit white light.
- the light emitting efficiency of each of the colors may be optimized by respectively adjusting thicknesses of the color patterns and a thickness of the fourth color layer.
- the fabricating method of the organic light emitting device has a simplified fabricating process, and the organic light emitting device has a preferable light emitting efficiency and simple structure.
- FIGS. 1A to 1E are cross-sectional views illustrating a fabricating method of an organic light emitting device according to an embodiment of the invention.
- FIG. 2 is a cross-sectional view of an organic light emitting device according to an embodiment of the invention.
- FIG. 3 is a cross-sectional view of an organic light emitting device according to an embodiment of the invention.
- FIG. 4 is a frequency spectrum showing a relationship between wavelength and intensity of white light emitted from a third pixel region of an organic light emitting device in the experimental example.
- FIG. 5 is a cross-sectional view of the organic light emitting device of the experimental example.
- FIGS. 1A to 1E are cross-sectional views illustrating a fabricating method of an organic light emitting device according to an embodiment of the invention.
- a substrate 102 is firstly provided.
- the substrate 102 has a first pixel region 102 a , a second pixel region 102 b , a third pixel region 102 c , and a fourth pixel region 102 d .
- the substrate 102 is disposed with an isolation structure 104 , for example, to define the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d that are separated from each other and arranged in the same column.
- the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d are respectively accommodating spaces set by the isolation structure 104 and the substrate 102 .
- the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d are disposed in a side-by-side arrangement.
- the first pixel region 102 a , the second pixel region 102 b , and the fourth pixel region 102 d are, for example, closely adjacent to each other.
- a material of the substrate 102 may be glass, quartz, organic polymer, plastics, flexible plastics, or an opaque/reflective material, etc. The invention is not limited thereto.
- a material of the isolation structure 104 may be an insulating material such as silicon nitride, silicon oxide, silicon oxynitride, or an organic polymer, etc.
- a first lower pixel electrode 110 a , a second lower pixel electrode 110 b , a third lower pixel electrode 110 c , and a fourth lower pixel electrode 110 d are respectively formed in the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d .
- the first lower pixel electrode 110 a , the second lower pixel electrode 110 b , the third lower pixel electrode 110 c , and the fourth lower pixel electrode 110 d are formed by using sputtering, deposition, or other known processes, for example.
- a material of the first lower pixel electrode 110 a , the second lower pixel electrode 110 b , the third lower pixel electrode 110 c , and the fourth lower pixel electrode 110 d may be a transparent conductive material or an opaque conductive material.
- each of the electrodes may have a single-layer structure or a multi-layer structure.
- the transparent conductive material includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable oxides (such as zinc oxide), or a stack layer including at least two of the above.
- the opaque conductive material includes metals, such as silver, aluminum, molybdenum, copper, or titanium, or other suitable metals.
- a first ink jet printing process is then performed to form a first interlayer 120 in the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d , respectively.
- the first interlayer 120 is located on the first lower pixel electrode 110 a , the second lower pixel electrode 110 b , the third lower pixel electrode 110 c , and the fourth lower pixel electrode 110 d . Namely, the first interlayer 120 is located in the accommodating spaces of the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d .
- the first interlayer 120 includes at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL), for example.
- HIL hole injection layer
- HTL hole transport layer
- EBL electron blocking layer
- the first interlayer 120 includes a hole injection layer and a hole transport layer sequentially stacked on the substrate 102 , for example.
- a thickness of the first interlayer 120 is between 10 nm to 100 nm, for example.
- a second ink jet printing process is performed to form a first color pattern 130 a on the first interlayer 120 in the first pixel region 102 a , a second color pattern 130 b on the first interlayer 120 in the second pixel region 102 b , and a third color pattern 130 c on the first interlayer 120 in the third pixel region 102 c .
- the first color pattern 130 a is a red pattern
- the second color pattern 130 b is a green pattern
- the third color pattern 130 c is a yellow pattern, for example.
- the first color pattern 130 a includes a first color material, for example, the second color pattern 130 b includes a second color material, and the third color pattern 130 c includes the first color material and the second color material.
- the first color pattern 130 a includes a red material
- the second color pattern 130 b includes a green material
- the third color pattern 130 c includes 0.1%-1% of the red material and 99.9% to 99% of the green material, for example.
- the third color pattern 130 c is in a color of yellow.
- the third color pattern 130 c may be formed of a single-color material, such as a yellow material. It should be especially noted that in this step, there is no ink-jet printing process performed to the first interlayer 120 of the fourth pixel region 102 d .
- the first interlayer 120 of the fourth pixel region 102 d does not have a color pattern.
- a fourth color layer 140 is then formed to cover the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c , and cover the first interlayer 120 in the fourth pixel region 102 d .
- colors of the first color pattern 130 a , the second color pattern 130 b , the third color pattern 130 c , and the fourth color layer 140 are different from each other.
- the fourth color layer 140 is continuously formed on the first color pattern 130 a , the second color pattern 130 b , the third color pattern 130 c , and the first interlayer 120 of the fourth pixel region 102 d , for example.
- the fourth color layer 140 covers the isolation structure 104 between the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d .
- the fourth color layer 140 is a blue layer, for example.
- a method of forming the fourth color layer 140 is evaporation, for example.
- a charge generation layer 122 is further included.
- the charge generation layer 122 is located between the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c and the fourth color layer 140 , and between the first interlayer 120 of the fourth pixel region 102 d and the fourth color layer 140 .
- a method of forming the charge generation layer 122 is evaporation, for example.
- an upper pixel electrode 150 is formed on the fourth color layer 140 .
- a method of forming the upper pixel electrode 150 is evaporation, for example, and a material of the upper pixel electrode 150 may be similar to the material of the lower pixel electrodes 110 a , 110 b , 110 c , and 110 d as described above or other suitable materials. Details in this respect will not be further reiterated hereinafter.
- a color filter 160 is then arranged over the upper pixel electrode 150 .
- the color filter 160 has a first filter pattern 162 a , a second filter pattern 162 b , a third filter pattern 162 c , and a fourth filter pattern 162 d .
- the color filter 160 may further include a shielding pattern 164 , for example.
- the shielding pattern 164 is located between the first filter pattern 162 a , the second filter pattern 162 b , the third filter pattern 162 c , and the fourth filter pattern 162 d that are adjacent.
- the first filter pattern 162 a is disposed in correspondence with the first pixel region 102 a and filters light corresponding to the first color pattern 130 a out
- the second filter pattern 162 b is disposed in correspondence with the second pixel region 102 b and filters light corresponding to the second color pattern 130 b out
- the third filter pattern 162 c is disposed in correspondence with the third pixel region 102 c and filters light corresponding to the third color pattern 130 c and the fourth color layer 140 out
- the fourth filter pattern 162 d is disposed in correspondence with the fourth pixel region 102 d and filters light corresponding to the fourth color layer 140 out.
- the shielding pattern 164 is disposed in correspondence with the isolation structure 104 , for example.
- the first filter pattern 162 a is a red filter pattern
- the second filter pattern 162 b is a green filter pattern
- the third filter pattern 162 c is a white filter pattern
- the fourth filter pattern 162 d is a blue filter pattern
- the shielding pattern 164 is a black resin pattern, for example.
- the organic light emitting device 100 includes the substrate 102 , the first lower pixel electrode 110 a , the second lower pixel electrode 110 b , the third lower pixel electrode 110 c , the fourth lower pixel electrode 110 d , the first interlayer 120 , the first color pattern 130 a , the second color pattern 130 b , the third color pattern 130 c , the fourth color layer 140 , the upper pixel electrode 150 , and the color filter 160 .
- the isolation structure 104 is disposed on the substrate 102 to define the first pixel region 120 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d .
- the first pixel region 120 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d on the substrate 102 are separated from each other.
- the first lower pixel electrode 110 a , the second lower pixel electrode 110 b , the third lower pixel electrode 110 c , and the fourth lower pixel electrode 110 d are respectively located in the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d .
- the first interlayer 120 is disposed in the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d , and located on the first lower pixel electrode 110 a , the second lower pixel electrode 110 b , the third lower pixel electrode 110 c , and the fourth lower pixel electrode 110 d .
- the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c are respectively disposed on the first interlayer 120 in the first pixel region 102 a , the first interlayer 120 in the second pixel region 102 b , and the first interlayer 120 in the third pixel region 102 c .
- first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c are lower than an upper surface of the isolation structure 104 , for example. Namely, the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c are located in the accommodating spaces defined by the isolation structure 104 .
- the fourth color layer 140 is disposed on the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c and on the first interlayer 120 in the fourth pixel region 102 d , and covers the isolation structure 104 . Also, the colors of the first color pattern 130 a , the second color pattern 130 b , the third color pattern 130 c , and the fourth color layer 140 are different from each other.
- the fourth color layer 140 covers the first color pattern 130 a , the second color pattern 130 b , the third color pattern 130 c , and the isolation structure 104 .
- the upper pixel electrode 150 is located on the fourth color layer 140 .
- the color filter 160 is located on the upper pixel electrode 150 .
- the color filter 160 has the first filter pattern 162 a , the second filter pattern 162 b , the third filter pattern 162 c , and the fourth filter pattern 162 d .
- the first filter pattern 162 a is disposed in correspondence with the first pixel region 102 a and filters the light corresponding to the first color pattern 130 a out
- the second filter pattern 162 b is disposed in correspondence with the second pixel region 102 b and filters the light corresponding to the second color pattern 130 b out
- the third filter pattern 162 c is disposed in correspondence with the third pixel region 102 c and filters the light corresponding to the third color pattern 130 c and the fourth color layer 140 out
- the fourth filter pattern 162 d is disposed in correspondence with the fourth pixel region 102 d and filters the light corresponding to the fourth color layer 140 out.
- a first color light L 1 such as red light is emitted corresponding to the first pixel region 102 a .
- Light emitted corresponding to the fourth color layer 140 in the second pixel region 102 b is filtered off, and light from the second color pattern 130 b is filtered out. Therefore, a second color light L 2 such as green light is emitted corresponding to the second pixel region 102 b .
- a fourth color light L 4 such as blue light is emitted corresponding to the fourth pixel region 102 d .
- Light emitted corresponding to the third color pattern 130 c and the fourth color layer 140 in the third pixel region 102 c is filtered out together by the third filter pattern 162 c . Therefore, a white light W combined by the third color pattern 130 c and the fourth color layer 140 is emitted corresponding to the third pixel region 102 c , wherein the white light W is white light formed of the colors of red, blue, and green, for example.
- the organic light emitting device 100 includes a first light emitting unit (not shown), a second light emitting unit (not shown), a third light emitting unit (not shown), and a fourth light emitting unit (not shown), which are respectively disposed in correspondence with the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d .
- the first light emitting unit emits the first color light L 1
- the second light emitting unit emits the second color light L 2
- the fourth light emitting unit emits the fourth color light L 4
- the third light emitting unit emits the white light W.
- the first color light L 1 , the second color light L 2 , and the fourth color light L 4 are red light, green light, and blue light, for example.
- the organic light emitting device having a structure shown in FIG. 1E is fabricated based on the processes described above, the invention is not limited thereto. In other words, the organic light emitting device having the structure shown in FIG. 1E may be fabricated through other processes. Also, in other embodiments, an organic light emitting device may further include at least one additional interlayer.
- the organic light emitting device 100 in one embodiment may further include a second interlayer 124 , for example, which is disposed between the fourth color layer 140 and the upper pixel electrode 150 .
- a method of forming the second interlayer 124 is evaporation, for example.
- the second interlayer 124 may include at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer, for example.
- the second interlayer 124 includes an electron transport layer and an electron injection layer disposed on the fourth color layer 140 , for example.
- the organic light emitting device 100 further includes a third interlayer 126 and a fourth interlayer 128 , for example.
- the third interlayer 126 is located between the charge generation layer 122 and the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c and located between the charge generation layer 122 and the first interlayer 120 of the fourth pixel region 102 d , for example.
- the third interlayer 126 may include at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL), for example.
- the third interlayer 126 is a hole blocking layer (HBL), for example.
- the fourth interlayer 128 is located between the charge generation layer 122 and the fourth color layer 140 , for example.
- the fourth interlayer 128 includes at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL), for example.
- the fourth interlayer 128 includes a hole injection layer and a hole transport layer sequentially stacked on the charge generation layer 122 , for example.
- the fourth color layer 140 , the charge generation layer 122 , the second interlayer 124 , the third interlayer 126 , and the fourth interlayer 128 are films fully formed on the substrate 102 , the same method, such as evaporation, may be used to form the films, so as to simplified the fabricating process.
- the first pixel region 102 a , the second pixel region 102 b , the third pixel region 102 c , and the fourth pixel region 102 d are disposed in a side-by-side arrangement.
- the light emitting positions corresponding to the first pixel region 102 a , the second pixel region 102 b , and the fourth pixel region 102 d respectively emit the first color light L 1 , the second color light L 2 , and the fourth color light L 4
- the light emitting position corresponding to the third pixel region 102 c emits the white light W.
- the first color light L 1 , the second color light L 2 , and the fourth color light L 4 are red light, green light, and blue light, for example.
- the organic light emitting device 100 has advantages of the RBG side-by-side (RGB SBS) technology and the technology of white light OLED as a light source in combination with color filter layer (WOLED+CF), i.e. a lower power consumption, a longer life span of blue light, and a simpler structure.
- thicknesses of the first color pattern 130 a , the second color pattern 130 b , and the third color pattern 130 c and a thickness of the fourth color layer 140 may be adjusted respectively, or thicknesses of the charge generation layer 122 and the interlayers 124 , 126 , and 128 may be respectively adjusted, so as to optimize light emitting efficiency of each color to obtain a preferable color saturation, such that the organic light emitting device 100 is allowed to achieve the most preferable light emitting efficiency.
- the organic light emitting device 100 does not have the blue peak issue.
- the ink jet printing process is used to form the first, second, and third color patterns 130 a , 130 b , and 130 c in the first to third pixel regions 102 a , 102 b , and 102 c .
- the ink-jet printing process is used to form the first interlayer 120 in the first to fourth pixel regions 102 a , 102 b , 102 c , and 102 d . Therefore, a mask that requires precise alignment needs not to be used, and the fabricating process is consequently simplified.
- the organic light emitting device 100 has a higher light emitting efficiency and lower fabricating cost, thus meeting the requirement of full color technology.
- FIG. 4 is a frequency spectrum showing a relationship between wavelength and intensity of white light emitted from a third pixel region of an organic light emitting device in the experimental example.
- the organic light emitting device of the experimental example whose structure is shown in FIG. 5 , includes an anode (i.e. the third lower pixel electrode 110 c ), a hole injection layer and a hole transport layer (i.e. the first interlayer 120 ), pattern units formed of red and green (i.e. the third color pattern 130 c ), a hole blocking layer (i.e. the third interlayer 126 ), a charge generation layer (i.e. the charge generation layer 122 ), a hole injection layer and a hole transport layer (i.e.
- the fourth interlayer 128 a blue layer (i.e. the fourth color layer 140 ), an electron transport layer and an electron injection layer (i.e. the second interlayer 124 ), a cathode layer (i.e. the upper pixel electrode 150 ), and a color filter (i.e. the color filter 160 ) stacked sequentially on a substrate.
- a content of a red material and a content of a green material in the pattern unit formed of red and green are respectively 0.5% and 99.5%.
- a white light beam of the organic light emitting device of the experimental example includes positions of wave peaks that respectively correspond to wavelengths of red light (R), green light (G), and blue light (B), indicating that the white light beam is formed of the red light, green light, and blue light and has a preferable light emitting efficiency.
- the white light beam of the organic light emitting device of the experimental example meets the standard of white light.
- the third color pattern and the fourth color layer of the organic light emitting device of the invention are capable of generating a light source of white light that meets the requirement together.
- the ink-jet printing process is used to fabricate the first, second, and third color patterns in the first, second, and third pixel regions respectively, and then to form the fourth color layer on the fourth pixel region and each of the color patterns.
- the light emitting positions corresponding to the first, second, and fourth pixel regions emit red light, green light, and blue light respectively, for example.
- the light emitting position corresponding to the third pixel region emits white light formed of red light, green light, and blue light, for example.
- the organic light emitting device Since the light emitting units that emit single-color light are in a side-by-side arrangement, and white light is formed by combining plural kinds of single-color light that are emitted, the organic light emitting device has a lower power consumption, longer lift span of blue light, and a simpler structure.
- the thicknesses of the color patterns and the fourth color layer or the thicknesses of the interlayers may be adjusted based on each color light, so that the organic light emitting device is allowed to achieve the most preferable light emitting efficiency.
- the fabricating process is thus simplified.
- the organic light emitting device has a higher light emitting efficiency and lower fabricating cost, thus meeting the requirement of full color technology.
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Abstract
Description
- This application claims the priority benefit of Taiwan application serial no. 103105530, filed on Feb. 19, 2014. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
- 1. Field of the Invention
- The invention relates to a light emitting device and a fabricating method thereof, and particularly relates to an organic light emitting device and a fabricating method thereof.
- 2. Description of Related Art
- Due to the advantages like self-luminescence, no viewing-angle dependence, low power consumption, simple fabrication, low costs, low working temperature, high response speed, and full-color display, organic light emitting devices (OLED) have a great potential of application and are likely to become the mainstream of the illuminating light source of flat display panels in the next generation.
- The full color technology commonly applied in the OLED display panels includes the technology of side-by-side arrangement of red, green, and blue (RGB) pixels and the technology of white light OLED as a light source in combination with color filter layer. The technology of side-by-side arrangement of the RGB pixels provides light formed of light respectively emitted from the red, blue, and green pixels. With the technology, a preferable degree of color saturation and lower power consumption are achieved. However, the technology suffers from being difficult to obtain a broader color gamut and being difficult to align a mask. The technology of white light OLED as a light source in combination with color filter layer uses a color filter to filter out the three prime colors, which are colors of red, blue, and green. Although the technology does not require a mask for precise alignment, it suffers from a relatively less preferable color performance, higher power consumption, and being unable to respectively adjust preferred thicknesses of the red, blue, and green pixels. Thus, a full color technology having a preferable light emitting efficiency is needed in this field.
- The invention provides a fabricating method of an organic light emitting device. The organic light emitting device fabricated accordingly has a preferable light emitting efficiency.
- The invention also provides an organic light emitting device that has a preferable light emitting efficiency.
- The fabricating method of the organic light emitting device of the invention includes the following steps. A substrate having a first pixel region, a second pixel region, a third pixel region, and a fourth pixel region is provided. A first lower pixel electrode, a second lower pixel electrode, a third lower pixel electrode, and a fourth lower pixel electrode are respectively formed in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region. A first interlayer is formed in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region by using a first ink-jet printing process. In addition, the first interlayer is respectively located on the first lower pixel electrode, the second lower pixel electrode, the third lower pixel electrode, and the fourth lower pixel electrode. A second ink-jet printing process is performed to form a first color pattern on the first interlayer in the first pixel region, a second color pattern on the first interlayer in the second pixel region, and a third color pattern on the first interlayer in the third pixel region. A fourth color layer is formed to cover the first color pattern, the second color pattern, and the third color pattern, and to cover the first interlayer in the fourth pixel region. In addition, colors of the first color pattern, the second color pattern, the third color pattern, and the fourth color layer are different from each other. An upper pixel electrode is formed on the fourth color layer. A color filter is arranged over the upper pixel electrode. In addition, the color filter has a first filter pattern, a second filter pattern, a third filter pattern, and a fourth filter pattern, the first filter pattern is disposed in correspondence with the first pixel region and filters light corresponding to the first color pattern out, the second filter pattern is disposed in correspondence with the second pixel region and filters light corresponding to the second color pattern out, the third filter pattern is disposed in correspondence with the third pixel region and filters light corresponding to the third color pattern and the fourth color layer out, and the fourth filter pattern is disposed in correspondence with the fourth pixel region and filters the light corresponding to the fourth color layer out.
- The organic light emitting device of the invention includes a substrate, a first lower pixel electrode, a second lower pixel electrode, a third lower pixel electrode, a fourth lower pixel electrode, a first interlayer, a first color pattern, a second color pattern, a third color pattern, a fourth color layer, an upper pixel electrode, and a color filter. An isolation structure is disposed on the substrate to define a first pixel region, a second pixel region, a third pixel region, and a fourth pixel region separated from each other on the substrate. The first lower pixel electrode, the second lower pixel electrode, the third lower pixel electrode, and the fourth lower pixel electrode are respectively located in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region. The first interlayer is disposed in the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region, and located on the first lower pixel electrode, the second lower pixel electrode, the third lower pixel electrode, and the fourth lower pixel electrode. The first color pattern, the second color pattern, and the third color pattern are respectively disposed on the first interlayer in the first pixel region, the first interlayer in the second pixel region, and the first interlayer in the third pixel region. The fourth color layer is disposed on the first color pattern, the second color pattern, the third color pattern, and the first interlayer in the fourth pixel region, and covers the isolation structure. The upper pixel electrode is located on the fourth color layer. The color filter is arranged over the upper pixel electrode. In addition, the color filter has the first filter pattern, the second filter pattern, the third filter pattern, and the fourth filter pattern, the first filter pattern is disposed in correspondence with the first pixel region and filters light corresponding to the first color pattern out, the second filter pattern is disposed in correspondence with the second pixel region and filters light corresponding to the second color pattern out, the third filter pattern is disposed in correspondence with the third pixel region and filters light corresponding to the third color pattern and the fourth color layer out, and the fourth filter pattern is disposed in correspondence with the fourth pixel region and filters the light corresponding to the fourth color layer out.
- In an embodiment of the invention, a first color light is emitted corresponding to the first pixel region, a second color light is emitted corresponding to the second pixel region, a third color light is emitted corresponding to the third pixel region, and a fourth color light is emitted corresponding to the fourth pixel region.
- In an embodiment of the invention, the first color light is red light, the second color light is green light, and the fourth color light is blue light.
- In an embodiment of the invention, the first color pattern is a red pattern, the second color pattern is a green pattern, the third color pattern is a yellow pattern, and the fourth color layer is a blue layer.
- In an embodiment of the invention, the first color pattern includes a first color material, the second color pattern includes a second color material, and the third color pattern includes the first color material and the second color material.
- In an embodiment of the invention, an isolation structure is disposed on the substrate to define the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region separated from each other. In addition, the fourth color layer is formed on the isolation structure.
- In an embodiment of the invention, the methods of forming the fourth color layer and the upper pixel electrode are evaporation.
- In an embodiment of the invention, the first interlayer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
- In an embodiment of the invention, a thickness of the first interlayer is between 10 nm to 100 nm.
- In an embodiment of the invention, a second interlayer is further formed between the fourth color layer and the upper pixel electrode.
- In an embodiment of the invention, a forming process of the second interlayer is evaporation.
- In an embodiment of the invention, the second interlayer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
- In an embodiment of the invention, forming a charge generation layer located between the first, second, and third color patterns and the fourth color layer, and located between the first interlayer of the fourth pixel region and the fourth color layer is further included.
- In an embodiment of the invention, the method of forming the charge generation layer comprises evaporation.
- In an embodiment of the invention, a third interlayer is further formed, located between the charge generation layer and the first, second, and third color patterns, and located between the charge generation layer and the first interlayer on the fourth pixel region is further included.
- In an embodiment of the invention, the third interlayer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
- In an embodiment of the invention, forming a fourth interlayer located between the charge generation layer and the fourth color layer is further included.
- In an embodiment of the invention, the fourth interlayer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
- In an embodiment of the invention, upper surfaces of the first color pattern, the second color pattern, and the third color pattern are lower than an upper surface of the isolation structure.
- In an embodiment of the invention, the color filter further includes a plurality of shielding patterns, located between the first filter pattern, the second filter pattern, the third filter pattern, and the fourth filter pattern.
- Based on the above, in the fabricating method of the organic light emitting device of the invention, the ink-jet printing process is used to fabricate the first, second, and third color patterns in the first, second, and third pixel regions respectively, and then to form the fourth color layer on the fourth pixel region and each of the color patterns. By using with the color filter, the first, second, and fourth pixel regions of the organic light emitting device emit light of different colors, and the third pixel region emit white light. In addition, the light emitting efficiency of each of the colors may be optimized by respectively adjusting thicknesses of the color patterns and a thickness of the fourth color layer. Thus, the fabricating method of the organic light emitting device has a simplified fabricating process, and the organic light emitting device has a preferable light emitting efficiency and simple structure.
- To make the above features and advantages of the invention more comprehensible, embodiments accompanied with drawings are described in detail as follows.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
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FIGS. 1A to 1E are cross-sectional views illustrating a fabricating method of an organic light emitting device according to an embodiment of the invention. -
FIG. 2 is a cross-sectional view of an organic light emitting device according to an embodiment of the invention. -
FIG. 3 is a cross-sectional view of an organic light emitting device according to an embodiment of the invention. -
FIG. 4 is a frequency spectrum showing a relationship between wavelength and intensity of white light emitted from a third pixel region of an organic light emitting device in the experimental example. -
FIG. 5 is a cross-sectional view of the organic light emitting device of the experimental example. - Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
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FIGS. 1A to 1E are cross-sectional views illustrating a fabricating method of an organic light emitting device according to an embodiment of the invention. Referring toFIG. 1A , asubstrate 102 is firstly provided. Thesubstrate 102 has afirst pixel region 102 a, asecond pixel region 102 b, athird pixel region 102 c, and afourth pixel region 102 d. In this embodiment, thesubstrate 102 is disposed with anisolation structure 104, for example, to define thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d that are separated from each other and arranged in the same column. Namely, as shown inFIG. 1A , thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d are respectively accommodating spaces set by theisolation structure 104 and thesubstrate 102. In addition, thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d are disposed in a side-by-side arrangement. In addition, thefirst pixel region 102 a, thesecond pixel region 102 b, and thefourth pixel region 102 d are, for example, closely adjacent to each other. Also, thesecond pixel region 102 b is located between thefirst pixel region 102 a and thefourth pixel region 102 d. A material of thesubstrate 102 may be glass, quartz, organic polymer, plastics, flexible plastics, or an opaque/reflective material, etc. The invention is not limited thereto. A material of theisolation structure 104 may be an insulating material such as silicon nitride, silicon oxide, silicon oxynitride, or an organic polymer, etc. - Then, a first
lower pixel electrode 110 a, a secondlower pixel electrode 110 b, a thirdlower pixel electrode 110 c, and a fourthlower pixel electrode 110 d are respectively formed in thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d. The firstlower pixel electrode 110 a, the secondlower pixel electrode 110 b, the thirdlower pixel electrode 110 c, and the fourthlower pixel electrode 110 d are formed by using sputtering, deposition, or other known processes, for example. A material of the firstlower pixel electrode 110 a, the secondlower pixel electrode 110 b, the thirdlower pixel electrode 110 c, and the fourthlower pixel electrode 110 d may be a transparent conductive material or an opaque conductive material. In addition, each of the electrodes may have a single-layer structure or a multi-layer structure. The transparent conductive material includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide or other suitable oxides (such as zinc oxide), or a stack layer including at least two of the above. The opaque conductive material includes metals, such as silver, aluminum, molybdenum, copper, or titanium, or other suitable metals. - Referring to
FIG. 1B , a first ink jet printing process is then performed to form afirst interlayer 120 in thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d, respectively. Thefirst interlayer 120 is located on the firstlower pixel electrode 110 a, the secondlower pixel electrode 110 b, the thirdlower pixel electrode 110 c, and the fourthlower pixel electrode 110 d. Namely, thefirst interlayer 120 is located in the accommodating spaces of thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d. Thefirst interlayer 120 includes at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL), for example. In this embodiment, thefirst interlayer 120 includes a hole injection layer and a hole transport layer sequentially stacked on thesubstrate 102, for example. A thickness of thefirst interlayer 120 is between 10 nm to 100 nm, for example. - Then, a second ink jet printing process is performed to form a
first color pattern 130 a on thefirst interlayer 120 in thefirst pixel region 102 a, asecond color pattern 130 b on thefirst interlayer 120 in thesecond pixel region 102 b, and athird color pattern 130 c on thefirst interlayer 120 in thethird pixel region 102 c. In this embodiment, thefirst color pattern 130 a is a red pattern, for example, thesecond color pattern 130 b is a green pattern, for example, and thethird color pattern 130 c is a yellow pattern, for example. In addition, thefirst color pattern 130 a includes a first color material, for example, thesecond color pattern 130 b includes a second color material, and thethird color pattern 130 c includes the first color material and the second color material. For example, thefirst color pattern 130 a includes a red material, for example, thesecond color pattern 130 b includes a green material, for example, and thethird color pattern 130 c includes 0.1%-1% of the red material and 99.9% to 99% of the green material, for example. Thus, thethird color pattern 130 c is in a color of yellow. Naturally, thethird color pattern 130 c may be formed of a single-color material, such as a yellow material. It should be especially noted that in this step, there is no ink-jet printing process performed to thefirst interlayer 120 of thefourth pixel region 102 d. Thus, thefirst interlayer 120 of thefourth pixel region 102 d does not have a color pattern. - It should also be mentioned that since the ink jet printing process is used to form the
first interlayer 120 and thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c, a fine metal mask is not required in the steps. Thus, a step of mask alignment is not required, and the fabricating process is significantly simplified. - Referring to
FIG. 1C , afourth color layer 140 is then formed to cover thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c, and cover thefirst interlayer 120 in thefourth pixel region 102 d. In addition, colors of thefirst color pattern 130 a, thesecond color pattern 130 b, thethird color pattern 130 c, and thefourth color layer 140 are different from each other. Thefourth color layer 140 is continuously formed on thefirst color pattern 130 a, thesecond color pattern 130 b, thethird color pattern 130 c, and thefirst interlayer 120 of thefourth pixel region 102 d, for example. Thus, thefourth color layer 140 covers theisolation structure 104 between thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d. In this embodiment, thefourth color layer 140 is a blue layer, for example. A method of forming thefourth color layer 140 is evaporation, for example. - In this embodiment, formation of a
charge generation layer 122 is further included. Thecharge generation layer 122 is located between thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c and thefourth color layer 140, and between thefirst interlayer 120 of thefourth pixel region 102 d and thefourth color layer 140. A method of forming thecharge generation layer 122 is evaporation, for example. - Referring to
FIG. 1D , anupper pixel electrode 150 is formed on thefourth color layer 140. A method of forming theupper pixel electrode 150 is evaporation, for example, and a material of theupper pixel electrode 150 may be similar to the material of the 110 a, 110 b, 110 c, and 110 d as described above or other suitable materials. Details in this respect will not be further reiterated hereinafter.lower pixel electrodes - Referring to
FIG. 1E , acolor filter 160 is then arranged over theupper pixel electrode 150. Thecolor filter 160 has afirst filter pattern 162 a, asecond filter pattern 162 b, athird filter pattern 162 c, and afourth filter pattern 162 d. Thecolor filter 160 may further include ashielding pattern 164, for example. Theshielding pattern 164 is located between thefirst filter pattern 162 a, thesecond filter pattern 162 b, thethird filter pattern 162 c, and thefourth filter pattern 162 d that are adjacent. Thefirst filter pattern 162 a is disposed in correspondence with thefirst pixel region 102 a and filters light corresponding to thefirst color pattern 130 a out, thesecond filter pattern 162 b is disposed in correspondence with thesecond pixel region 102 b and filters light corresponding to thesecond color pattern 130 b out, thethird filter pattern 162 c is disposed in correspondence with thethird pixel region 102 c and filters light corresponding to thethird color pattern 130 c and thefourth color layer 140 out, thefourth filter pattern 162 d is disposed in correspondence with thefourth pixel region 102 d and filters light corresponding to thefourth color layer 140 out. Theshielding pattern 164 is disposed in correspondence with theisolation structure 104, for example. In this embodiment, thefirst filter pattern 162 a is a red filter pattern, for example, thesecond filter pattern 162 b is a green filter pattern, for example, thethird filter pattern 162 c is a white filter pattern, for example, thefourth filter pattern 162 d is a blue filter pattern, for example, and theshielding pattern 164 is a black resin pattern, for example. - In this embodiment, the organic
light emitting device 100 includes thesubstrate 102, the firstlower pixel electrode 110 a, the secondlower pixel electrode 110 b, the thirdlower pixel electrode 110 c, the fourthlower pixel electrode 110 d, thefirst interlayer 120, thefirst color pattern 130 a, thesecond color pattern 130 b, thethird color pattern 130 c, thefourth color layer 140, theupper pixel electrode 150, and thecolor filter 160. Theisolation structure 104 is disposed on thesubstrate 102 to define the first pixel region 120 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d. The first pixel region 120 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d on thesubstrate 102 are separated from each other. The firstlower pixel electrode 110 a, the secondlower pixel electrode 110 b, the thirdlower pixel electrode 110 c, and the fourthlower pixel electrode 110 d are respectively located in thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d. Thefirst interlayer 120 is disposed in thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d, and located on the firstlower pixel electrode 110 a, the secondlower pixel electrode 110 b, the thirdlower pixel electrode 110 c, and the fourthlower pixel electrode 110 d. Thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c are respectively disposed on thefirst interlayer 120 in thefirst pixel region 102 a, thefirst interlayer 120 in thesecond pixel region 102 b, and thefirst interlayer 120 in thethird pixel region 102 c. In addition, upper surfaces of thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c are lower than an upper surface of theisolation structure 104, for example. Namely, thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c are located in the accommodating spaces defined by theisolation structure 104. - The
fourth color layer 140 is disposed on thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c and on thefirst interlayer 120 in thefourth pixel region 102 d, and covers theisolation structure 104. Also, the colors of thefirst color pattern 130 a, thesecond color pattern 130 b, thethird color pattern 130 c, and thefourth color layer 140 are different from each other. Compared with thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c being respectively located in thefirst pixel region 102 a, thesecond pixel region 102 b, and thethird pixel region 102 c, thefourth color layer 140 covers thefirst color pattern 130 a, thesecond color pattern 130 b, thethird color pattern 130 c, and theisolation structure 104. - The
upper pixel electrode 150 is located on thefourth color layer 140. Thecolor filter 160 is located on theupper pixel electrode 150. In addition, thecolor filter 160 has thefirst filter pattern 162 a, thesecond filter pattern 162 b, thethird filter pattern 162 c, and thefourth filter pattern 162 d. Thefirst filter pattern 162 a is disposed in correspondence with thefirst pixel region 102 a and filters the light corresponding to thefirst color pattern 130 a out, thesecond filter pattern 162 b is disposed in correspondence with thesecond pixel region 102 b and filters the light corresponding to thesecond color pattern 130 b out, thethird filter pattern 162 c is disposed in correspondence with thethird pixel region 102 c and filters the light corresponding to thethird color pattern 130 c and thefourth color layer 140 out, thefourth filter pattern 162 d is disposed in correspondence with thefourth pixel region 102 d and filters the light corresponding to thefourth color layer 140 out. - In this embodiment, when the organic
light emitting device 100 is driven, light corresponding to thefourth color layer 140 in thefirst pixel region 102 a is filtered off, and light from thefirst color pattern 130 a is filtered out. Therefore, a first color light L1 such as red light is emitted corresponding to thefirst pixel region 102 a. Light emitted corresponding to thefourth color layer 140 in thesecond pixel region 102 b is filtered off, and light from thesecond color pattern 130 b is filtered out. Therefore, a second color light L2 such as green light is emitted corresponding to thesecond pixel region 102 b. Light emitted corresponding to thefourth color layer 140 in thefourth pixel region 102 d is filtered out by the fourthcolor filter pattern 162 d. Therefore, a fourth color light L4 such as blue light is emitted corresponding to thefourth pixel region 102 d. Light emitted corresponding to thethird color pattern 130 c and thefourth color layer 140 in thethird pixel region 102 c is filtered out together by thethird filter pattern 162 c. Therefore, a white light W combined by thethird color pattern 130 c and thefourth color layer 140 is emitted corresponding to thethird pixel region 102 c, wherein the white light W is white light formed of the colors of red, blue, and green, for example. - Namely, the organic
light emitting device 100 includes a first light emitting unit (not shown), a second light emitting unit (not shown), a third light emitting unit (not shown), and a fourth light emitting unit (not shown), which are respectively disposed in correspondence with thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d. In addition, the first light emitting unit emits the first color light L1, the second light emitting unit emits the second color light L2, the fourth light emitting unit emits the fourth color light L4, and the third light emitting unit emits the white light W. Furthermore, the first color light L1, the second color light L2, and the fourth color light L4 are red light, green light, and blue light, for example. - It should be mentioned that although in the embodiment, the organic light emitting device having a structure shown in
FIG. 1E is fabricated based on the processes described above, the invention is not limited thereto. In other words, the organic light emitting device having the structure shown inFIG. 1E may be fabricated through other processes. Also, in other embodiments, an organic light emitting device may further include at least one additional interlayer. For example, as shown inFIG. 2 , the organiclight emitting device 100 in one embodiment may further include asecond interlayer 124, for example, which is disposed between thefourth color layer 140 and theupper pixel electrode 150. A method of forming thesecond interlayer 124 is evaporation, for example. Thesecond interlayer 124 may include at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer, for example. In this embodiment, thesecond interlayer 124 includes an electron transport layer and an electron injection layer disposed on thefourth color layer 140, for example. As shown inFIG. 3 , in another embodiment, the organiclight emitting device 100 further includes athird interlayer 126 and afourth interlayer 128, for example. Thethird interlayer 126 is located between thecharge generation layer 122 and thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c and located between thecharge generation layer 122 and thefirst interlayer 120 of thefourth pixel region 102 d, for example. Thethird interlayer 126 may include at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL), for example. In this embodiment, thethird interlayer 126 is a hole blocking layer (HBL), for example. Thefourth interlayer 128 is located between thecharge generation layer 122 and thefourth color layer 140, for example. Thefourth interlayer 128 includes at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL), for example. In this embodiment, thefourth interlayer 128 includes a hole injection layer and a hole transport layer sequentially stacked on thecharge generation layer 122, for example. However, based on the needs, people skilled in the art may omit or add a charge generation layer or an interlayer. The invention is not limited thereto. In addition, since thefourth color layer 140, thecharge generation layer 122, thesecond interlayer 124, thethird interlayer 126, and thefourth interlayer 128 are films fully formed on thesubstrate 102, the same method, such as evaporation, may be used to form the films, so as to simplified the fabricating process. - In the organic
light emitting device 100 of the above-described embodiments, thefirst pixel region 102 a, thesecond pixel region 102 b, thethird pixel region 102 c, and thefourth pixel region 102 d are disposed in a side-by-side arrangement. In addition, the light emitting positions corresponding to thefirst pixel region 102 a, thesecond pixel region 102 b, and thefourth pixel region 102 d respectively emit the first color light L1, the second color light L2, and the fourth color light L4, whereas the light emitting position corresponding to thethird pixel region 102 c emits the white light W. In this embodiment, the first color light L1, the second color light L2, and the fourth color light L4 are red light, green light, and blue light, for example. Thus, the organiclight emitting device 100 has advantages of the RBG side-by-side (RGB SBS) technology and the technology of white light OLED as a light source in combination with color filter layer (WOLED+CF), i.e. a lower power consumption, a longer life span of blue light, and a simpler structure. In addition, based on the needs, thicknesses of thefirst color pattern 130 a, thesecond color pattern 130 b, and thethird color pattern 130 c and a thickness of thefourth color layer 140 may be adjusted respectively, or thicknesses of thecharge generation layer 122 and the 124, 126, and 128 may be respectively adjusted, so as to optimize light emitting efficiency of each color to obtain a preferable color saturation, such that the organicinterlayers light emitting device 100 is allowed to achieve the most preferable light emitting efficiency. In addition, compared with the conventional hybrid common blue structure, the organiclight emitting device 100 does not have the blue peak issue. - In the fabricating process of the organic
light emitting device 100, the ink jet printing process is used to form the first, second, and 130 a, 130 b, and 130 c in the first tothird color patterns 102 a, 102 b, and 102 c. Also, the ink-jet printing process is used to form thethird pixel regions first interlayer 120 in the first to 102 a, 102 b, 102 c, and 102 d. Therefore, a mask that requires precise alignment needs not to be used, and the fabricating process is consequently simplified. In addition, since films such as thefourth pixel regions fourth color layer 140, thecharge generation layer 122, and the second to 124, 126, and 128 are all films fully formed on thefourth interlayers substrate 102, the same method, such as evaporation, may be used to form the films, so as to simplified the fabricating process. Thus, the organiclight emitting device 100 has a higher light emitting efficiency and lower fabricating cost, thus meeting the requirement of full color technology. - An experiment described below serves to prove an efficiency of the white light emitted by the organic light emitting device of the invention.
-
FIG. 4 is a frequency spectrum showing a relationship between wavelength and intensity of white light emitted from a third pixel region of an organic light emitting device in the experimental example. The organic light emitting device of the experimental example, whose structure is shown inFIG. 5 , includes an anode (i.e. the thirdlower pixel electrode 110 c), a hole injection layer and a hole transport layer (i.e. the first interlayer 120), pattern units formed of red and green (i.e. thethird color pattern 130 c), a hole blocking layer (i.e. the third interlayer 126), a charge generation layer (i.e. the charge generation layer 122), a hole injection layer and a hole transport layer (i.e. the fourth interlayer 128), a blue layer (i.e. the fourth color layer 140), an electron transport layer and an electron injection layer (i.e. the second interlayer 124), a cathode layer (i.e. the upper pixel electrode 150), and a color filter (i.e. the color filter 160) stacked sequentially on a substrate. In addition, a content of a red material and a content of a green material in the pattern unit formed of red and green are respectively 0.5% and 99.5%. - Referring to
FIG. 4 , a white light beam of the organic light emitting device of the experimental example includes positions of wave peaks that respectively correspond to wavelengths of red light (R), green light (G), and blue light (B), indicating that the white light beam is formed of the red light, green light, and blue light and has a preferable light emitting efficiency. - In addition, by further measuring a CIE chromaticity coordinate (x, y) of the white light beam of the organic light emitting device of the experimental example, a value of (0.34, 0.37) is obtained. Thus, the white light beam of the organic light emitting device of the experimental example meets the standard of white light.
- In view of the experimental example, it can be known that the third color pattern and the fourth color layer of the organic light emitting device of the invention are capable of generating a light source of white light that meets the requirement together.
- In view of the above, in the fabricating method of the organic light emitting device of the invention, the ink-jet printing process is used to fabricate the first, second, and third color patterns in the first, second, and third pixel regions respectively, and then to form the fourth color layer on the fourth pixel region and each of the color patterns. By using with the color filter, the light emitting positions corresponding to the first, second, and fourth pixel regions emit red light, green light, and blue light respectively, for example. In addition, the light emitting position corresponding to the third pixel region emits white light formed of red light, green light, and blue light, for example. Since the light emitting units that emit single-color light are in a side-by-side arrangement, and white light is formed by combining plural kinds of single-color light that are emitted, the organic light emitting device has a lower power consumption, longer lift span of blue light, and a simpler structure.
- In the fabricating process of the organic light emitting device, the thicknesses of the color patterns and the fourth color layer or the thicknesses of the interlayers may be adjusted based on each color light, so that the organic light emitting device is allowed to achieve the most preferable light emitting efficiency. Besides, since it is not necessary to use a mask that requires precise alignment in the fabricating process of the organic light emitting device, and the same fabricating process may be used to fabricate plural kinds of films, the fabricating process is thus simplified. Thus, the organic light emitting device has a higher light emitting efficiency and lower fabricating cost, thus meeting the requirement of full color technology.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (20)
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| TW103105530A | 2014-02-19 | ||
| TW103105530A TWI538193B (en) | 2014-02-19 | 2014-02-19 | Organic light emitting device and fabricating method thereof |
| TW103105530 | 2014-02-19 |
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| US9111882B1 US9111882B1 (en) | 2015-08-18 |
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| US10230066B2 (en) | 2016-06-30 | 2019-03-12 | Lg Display Co., Ltd. | Organic light emitting display device having banks and method of manufacturing the same |
| US10770530B2 (en) | 2017-12-22 | 2020-09-08 | Lg Display Co., Ltd. | Organic light emitting display device |
| US20220037608A1 (en) * | 2019-01-15 | 2022-02-03 | Sony Semiconductor Solutions Corporation | Display device, manufacturing method of display device, and electronic instrument |
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| JP2015037062A (en) * | 2013-08-15 | 2015-02-23 | ソニー株式会社 | Display device and electronic apparatus |
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| JP2016072250A (en) * | 2014-09-30 | 2016-05-09 | 株式会社半導体エネルギー研究所 | Light-emitting device, electronic equipment, and lighting device |
| JP2016085969A (en) | 2014-10-24 | 2016-05-19 | 株式会社半導体エネルギー研究所 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE |
| CN105355644B (en) * | 2015-10-28 | 2018-05-22 | 京东方科技集团股份有限公司 | A kind of pixel unit and preparation method thereof, display device |
| CN107180847B (en) * | 2016-03-18 | 2021-04-20 | 京东方科技集团股份有限公司 | Pixel structure, organic light-emitting display panel and method of making the same, and display device |
| KR102878528B1 (en) * | 2017-02-28 | 2025-10-29 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
| CN106953029B (en) * | 2017-03-22 | 2019-08-02 | 京东方科技集团股份有限公司 | A kind of film encapsulation method and packaging film, ink jet printing device |
| CN107946474B (en) * | 2017-11-17 | 2020-05-08 | 京东方科技集团股份有限公司 | Organic light emitting diode panel, preparation method thereof and display device |
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| KR100490322B1 (en) * | 2003-04-07 | 2005-05-17 | 삼성전자주식회사 | Organic electro-luminescent display |
| KR100742372B1 (en) * | 2005-11-29 | 2007-07-24 | 삼성에스디아이 주식회사 | Manufacturing method of organic light emitting device |
| KR20070111610A (en) | 2006-05-18 | 2007-11-22 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display |
| JP4479737B2 (en) * | 2007-03-07 | 2010-06-09 | セイコーエプソン株式会社 | LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
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| US10230066B2 (en) | 2016-06-30 | 2019-03-12 | Lg Display Co., Ltd. | Organic light emitting display device having banks and method of manufacturing the same |
| US10770530B2 (en) | 2017-12-22 | 2020-09-08 | Lg Display Co., Ltd. | Organic light emitting display device |
| US20220037608A1 (en) * | 2019-01-15 | 2022-02-03 | Sony Semiconductor Solutions Corporation | Display device, manufacturing method of display device, and electronic instrument |
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| TWI538193B (en) | 2016-06-11 |
| US9111882B1 (en) | 2015-08-18 |
| TW201533896A (en) | 2015-09-01 |
| CN103840092A (en) | 2014-06-04 |
| CN103840092B (en) | 2016-08-24 |
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