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US20120315826A1 - Device and Method for Measuring Physical Parameters of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device - Google Patents

Device and Method for Measuring Physical Parameters of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device Download PDF

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Publication number
US20120315826A1
US20120315826A1 US13/387,941 US201113387941A US2012315826A1 US 20120315826 A1 US20120315826 A1 US 20120315826A1 US 201113387941 A US201113387941 A US 201113387941A US 2012315826 A1 US2012315826 A1 US 2012315826A1
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United States
Prior art keywords
slurry
sensor
polishing
physical parameters
measuring
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Abandoned
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US13/387,941
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English (en)
Inventor
Xinchun Lu
Dewen Zhao
Yongyong He
Jianbin Luo
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Tsinghua University
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Individual
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Assigned to TSINGHUA UNIVERSITY reassignment TSINGHUA UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LUO, JIANBIN, HE, YONGYONG, LU, XINCHUN, ZHAO, DEWEN
Publication of US20120315826A1 publication Critical patent/US20120315826A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

Definitions

  • the present disclosure relates to a device for measuring physical parameters of a slurry used in a chemical mechanical polishing apparatus, a method for measuring the physical parameters of the slurry using the device, and a chemical mechanical polishing apparatus including the device for measuring the physical parameters of the slurry.
  • a planarization polishing process of a film attached on a surface of a wafer is required to perform in order to satisfy the subsequent processing requirements during a process of fabricating an integrated circuit.
  • Chemical mechanical polishing (CMP) is a widely used planarization method currently.
  • a basic principle of CMP is that: rotations of a polishing head and a polishing pad may generate a relative motion required by polishing.
  • a wafer is carried in the polishing head and the polish pad is attached onto a surface of a polish disk.
  • a predetermined pressure is applied by the polishing head to press the wafer onto a surface of the polish pad.
  • a high material removal rate is required by CMP to improve production efficiency
  • a high uniformity should be ensured so as to control the non-uniformity in a reasonable extent. Otherwise, the wafer may be scrapped.
  • the polishing pressure is needed to accurately control.
  • Many related technologies such as regional pressure control method have been used, however the conventional methods may only control a back-pressure of the wafer, the real pressure between the wafer and the polishing pad is not known and there is suitable method to measure the real pressure.
  • a hydrodynamic lubrication or a mixed lubrication may be formed at the interface between the wafer and the polishing pad because of the relative motion between the wafer and the polishing pad. Since the back-pressure applied to the back surface of the wafer is actually borne by a fluid pressure and a contact pressure jointly, a distribution of the contact pressure can be calculated from a distribution of the fluid pressure. The contact pressure is a main factor affecting the mechanical action in the polishing process.
  • a temperature distribution may have a strong influence upon the physical performance of the polishing pad and the chemical performance of the slurry so as to affect the CMP process.
  • the present disclosure is directed to solve at least one of problems existing in the prior art.
  • Yet another object of the present disclosure is to provide a chemical mechanical polishing apparatus including the device for measuring the thickness of the slurry.
  • a device for measuring the physical parameters of the slurry used in the chemical mechanical polishing apparatus comprises a polishing head, a rotary table, a polishing platen disposed on an upper surface of the rotary table, and a polishing pad disposed on an upper surface of the polishing platen and opposed to the polishing head and having a through-hole.
  • the device for measuring the physical parameters of the slurry comprises: a sensor disposed in the polishing platen and adapted to contact the slurry via the through-hole of the polishing pad for measuring the physical parameters of the slurry; a converter disposed in the rotary table and coupled to the sensor for converting a measuring signal from the sensor into a standard electrical signal; and a processing unit coupled to the converter for acquiring the standard electrical signal to obtain the physical parameters of the slurry.
  • the sensor contacts the slurry via the through-hole in the polishing pad, and is rotated with the polishing platen during polishing so as to sector scan a whole surface of the wafer, so that the device may in-suit measure the physical parameters of the slurry between the polishing head and the polishing pad (i.e., the physical parameters of slurry between the wafer and the polishing pad).
  • the device also has the converter coupled to the sensor for converting the measuring signal of the sensor into the standard electrical signal, and the processing unit coupled to the converter for in-suit acquiring the physical parameters of the slurry.
  • a first groove is formed in the upper surface of the rotary table and covered by the polishing platen to define a first chamber in which the converter is disposed.
  • a second groove is formed in the upper surface of the polishing platen and covered by the polishing pad to define a second chamber, and the sensor is disposed in the second chamber and corresponds to the through-hole.
  • the device for measuring physical parameters of slurry further comprises a mounting panel disposed in the second chamber, and the sensor is mounted on the mounting panel.
  • the sensor especially a plurality of sensors
  • the second chamber By disposing the mounting panel in the second chamber, the sensor (especially a plurality of sensors) may be more conveniently disposed in the second chamber.
  • a plurality of through-holes are formed and arranged along a radial direction of the polishing platen at intervals, and a plurality of sensors are provided and arranged along the radial direction of the polishing platen at intervals and correspond to the plurality of through-holes respectively.
  • the plurality of through-holes are arranged along the radial direction of the polishing platen at equal intervals, and the plurality of sensors are arranged along the radial direction of the polishing platen at equal intervals.
  • the plurality of through-holes are arranged along a plurality of radial directions of the polishing disk, and the plurality of sensors are arranged in a plurality of one-dimensional linear arrays along the plurality of radial directions of the polishing disk.
  • a plurality of mounting panels are provided and the plurality of one-dimensional linear arrays of the sensors are correspondingly mounted on the plurality of mounting panels.
  • the senor is a temperature sensor and/or a pressure sensor
  • the converter is a temperature converter and/or a pressure converter, in which the temperature sensor is coupled to the temperature converter, and the pressure sensor is coupled to the pressure converter.
  • the processing unit further comprises a slip ring having a rotating part mounted on the rotary table and coupled to the converter, in which a rotating central axis of the rotating part of the slip ring coincides with a rotating central axis of the rotary table; an acquisition card coupled to a static part of the slip ring for acquiring the standard electrical signal; a signal converter coupled to the acquisition card for converting the standard electrical signal into a digital signal; a calculation module coupled to the signal converter for calculating the physical parameters of the slurry using the digital signal; and a display terminal coupled to the calculation module for displaying the physical parameters of the slurry.
  • a chemical mechanical polishing apparatus comprises: a rotary table; a polishing platen disposed on an upper surface of the rotary table; a polishing pad disposed on an upper surface of the polishing platen and having a through-hole; a polishing head opposed to the polishing pad; and the device for measuring the physical parameters of the slurry according to embodiments of the first aspect of the present disclosure, in which the sensor is disposed in the polishing platen and adapted to contact the slurry via the through-hole in the polishing pad for measuring the physical parameters of the slurry, the converter is disposed in the rotary table and coupled to the sensor for converting a measuring signal from the sensor into a standard electrical signal, and the processing unit is coupled to the converter for acquiring the standard electrical signal to calculate the physical parameters of the slurry.
  • the chemical mechanical polishing apparatus of an embodiment of the present disclosure by employing the device for measuring physical parameters of slurry in accordance with embodiments of the first aspect of the present disclosure, the physical parameters of the slurry between the polishing head and the polishing pad (i.e., the physical parameters of the slurry between the wafer and the polishing pad) may be in-suit measured and obtained. Therefore, the flatness of the wafer may be improved by using the chemical mechanical polishing apparatus to chemical mechanical polish the wafer.
  • the first groove is formed in the upper surface of the rotary table and covered by the polishing platen to define the first chamber, in which the converter is disposed.
  • the second groove is formed in the upper surface of the polishing platen and covered by the polishing pad to define the second chamber, and the sensor is disposed in the second chamber and corresponds to the through-hole.
  • a method for measuring the physical parameters of slurry comprises the steps of: A) during a chemical mechanical polishing process, sector scanning a whole surface of a wafer and measuring the physical parameters of the slurry to obtain a measuring signal using the sensor of the device for measuring the physical parameters of the slurry according to embodiments of the first aspect of the present disclosure; and B) converting the measuring signal from the sensor into a standard electrical signal using the converter, then acquiring the standard electrical signal at a predetermined frequency using the processing unit to obtain the physical parameters of the slurry.
  • the physical parameters of the slurry between the polishing head and the polishing pad may be in-suit measured and obtained.
  • the senor is a temperature sensor and/or a pressure sensor for measuring a temperature and/or a pressure of the slurry.
  • FIG. 1 is a schematic structure view of a device for measuring physical parameters of a slurry according to an embodiment of the present disclosure
  • FIG. 2 is a top view of the device for measuring the physical parameters of the slurry according to the embodiment of the present disclosure shown in FIG. 1 ;
  • FIG. 3 is a schematic structure view of the device for measuring the physical parameters of the slurry according to another embodiment of the present disclosure
  • FIG. 4 is a schematic structure view of the device for measuring the physical parameters of the slurry according to yet another embodiment of the present disclosure
  • FIG. 5 is a schematic view of measuring the physical parameters of slurry using the device for measuring physical parameters of slurry according to an embodiment of the present disclosure.
  • polishing head 10 wafer 11 , rotary table 20 , first chamber 21 , polishing platen 30 , second chamber 31 , polishing pad 40 , through-hole 41 , sensor 50 , converter 60 , processing unit 70 , slip ring 71 , an acquisition card 72 , display terminal 73 , mounting panel 80 .
  • relative terms such as “longitudinal”, “lateral”, “front”, “rear”, “right”, “left”, “lower”, “upper”, “horizontal”, “vertical”, “above”, “below”, “up”, “top”, “bottom” as well as derivative thereof (e.g., “horizontally”, “downwardly”, “upwardly”, etc.) should be construed to refer to the orientation as then described or as shown in the drawings under discussion. These relative terms are for convenience of description and do not require that the present disclosure be constructed or operated in a particular orientation.
  • the chemical mechanical polishing apparatus comprises a polishing head 10 , a rotary table 20 , a polishing platen 30 disposed on an upper surface of the rotary table 10 and a polishing pad 40 disposed on an upper surface of the polishing platen 30 and opposed to the polishing head 10 .
  • the polishing pad 40 has a through-hole 41 .
  • the device for measuring physical parameters of slurry comprises a sensor 50 , a converter 60 and a processor 70 .
  • the sensor 50 is disposed in the polishing platen 30 and adapted to contact the slurry via the through-hole 41 in the polishing pad 40 for measuring the physical parameters of the slurry.
  • the converter 60 is disposed in the rotary table 20 and coupled to the sensor 50 for converting a measuring signal from the sensor into a standard electrical signal.
  • the processing unit 70 is coupled to the converter 60 for acquiring the standard electrical signal to obtain the physical parameters of the slurry.
  • the sensor 50 is disposed in the polishing platen 30 , contacts the slurry via the through-hole 41 of the polishing pad 40 , and is rotated with the polishing platen 30 during polishing process so as to sector scan the whole surface of the wafer, so that the device for measuring the physical parameters of the slurry may in-suit measure the physical parameters of the slurry.
  • the device for measuring the physical parameters of the slurry also has the converter 60 coupled to the sensor 50 for converting the measuring signal of the sensor 50 into the standard electrical signal, and the processing unit 70 coupled to the converter 60 for in-suit acquiring the physical parameters of the slurry.
  • a first groove may be formed in the upper surface of the rotary table 20 and covered by the polishing platen 30 to define a first chamber 21 , in which the converter 60 may be disposed in the first chamber 21 .
  • a plurality of through-holes 41 may be formed and arranged along a radial direction of the polishing platen 30 at intervals, and a plurality of sensors 50 may be provided and arranged along the radial direction of the polishing platen 30 at intervals.
  • the plurality of sensors 50 may be in one-to-one correspondence with the plurality of through-holes 41 , respectively, that is, the quantity and position of the sensors 50 are corresponded to those of the through-holes 41 .
  • the plurality of sensors 50 are arranged into a one-dimensional linear array along the radial directions of the polishing platen 30 .
  • the plurality of through-holes 41 may be arranged along the radial direction of the polishing platen 30 at equal intervals, and the plurality of sensors 50 may be arranged along the radial direction of the polishing platen 30 at equal intervals.
  • the plurality of sensors 50 may be corresponded to the plurality of through-holes 41 , respectively.
  • the senor 50 is a temperature sensor and/or a pressure sensor
  • the converter 60 is a temperature converter and/or a pressure converter.
  • the temperature sensor is coupled to the temperature converter
  • the pressure sensor is coupled to the pressure converter.
  • a plurality of temperature sensors may be provided as the sensor 50 .
  • the plurality of temperature sensors may be arranged along the radial direction of the polishing platen 30 to form a one-dimensional linear array.
  • a plurality of pressure sensors may be provided as the sensor 50 .
  • the plurality of pressure sensors may be arranged along the radial direction of the polishing platen to form a one-dimensional linear array.
  • a plurality of temperature sensors and a plurality of pressure sensors may be provided as the sensor 50 .
  • the plurality of temperature sensors may be arranged along the radial direction of the polishing platen 30 to form a one-dimensional linear temperature sensor array and the plurality of pressure sensors may be arranged along the radial direction of the polishing platen 30 to form a one-dimensional linear pressure sensor array for simultaneously measuring the temperature and pressure of the slurry.
  • the plurality of through-holes 41 may be arranged along a plurality of radial directions of the polishing platen 30
  • the plurality of sensors 50 may be arranged along a plurality of radial directions of the polishing platen 30 to form a plurality of one-dimensional linear arrays. Therefore, the measuring data density may be further increased so that the distribution of the physical parameters of slurry may be obtained more accurately.
  • Each one-dimensional linear array may comprise one sensor 50 or a plurality of sensors 50 .
  • a plurality of temperature sensors may be arranged along a plurality of radial directions of the polishing platen 30 to form a plurality of one-dimensional linear temperature sensor arrays, or a plurality of pressure sensors may be arranged along a plurality of radial directions of the polishing platen to form a plurality of one-dimensional linear pressure sensor arrays, or a plurality of temperature sensors may be arranged along a plurality of radial directions of the polishing platen to form a plurality of one-dimensional linear temperature sensor arrays and a plurality of pressure sensors may be arranged along a plurality of radial directions of the polishing platen to form a plurality of one-dimensional linear pressure sensor arrays for simultaneously measuring the temperature and pressure of the slurry.
  • the plurality of one-dimensional linear arrays may be uniformly mounted in the polishing platen 30 , that is, the plurality of one-dimensional linear arrays may be disposed in the polishing platen 30 at equal angle intervals along the circumferential direction of the wafer, that is, the angles of the two adjacent one-dimensional linear arrays may be equal (e.g. 90 degree).
  • the polishing platen 30 may have a mounting hole in which the sensor 50 may be mounted.
  • One mounting hole may be disposed when there is one sensor 50 .
  • a plurality of mounting holes may be disposed when a plurality of sensors 50 are provided. In this case, the sensors 50 may be mounted in the mounting holes correspondingly.
  • a second groove may be formed in the upper surface of the polishing platen 30 and covered by the polishing pad 40 to define the second chamber 31 .
  • the sensor 50 may be disposed in the second chamber 31 . When the number of the sensor 50 is large, the sensors 50 may be more conveniently disposed by forming the second groove on the upper surface of the polishing platen 30 .
  • the device for measuring the physical parameters of the slurry may further comprise a mounting panel 80 disposed in the second chamber 31 , and the sensor 50 may be disposed on the mounting panel 80 .
  • the sensor especially a plurality of sensors 50
  • the plurality of sensors 50 may be more conveniently and accurately arranged along the radial direction of the polishing platen 30 at intervals.
  • the mounting panel 80 may be a long strip having two arc-shape ends so as to fit within an internal wall of the second chamber 31 .
  • the plurality of one-dimensional linear arrays are mounted on a plurality of mounting panels 80 correspondingly, that is, one one-dimensional linear array may be mounted on one mounting panel 80 .
  • the processing unit 70 may comprise a slip ring 71 , an acquisition card 72 , a signal converter, a calculation module and a display terminal 73 .
  • the slip ring 71 may have a rotating part mounted on the rotary table 20 and coupled to the converter 60 .
  • a rotating central axis of the rotating part of the slip ring 71 coincides with a rotating central axis of the rotary table. Therefore, the rotating part of the slip ring 71 may rotate together with the rotary table 20 .
  • the acquisition card 72 may connect to a static part of the slip ring 71 for acquiring the standard electrical signal.
  • the signal converter may connect to the acquisition card 72 for converting the standard electrical signal into a digital signal.
  • the calculation module may connect to the signal converter for calculating the physical parameters of slurry using the digital signal.
  • the display terminal 73 may connect to the calculation module for displaying the physical parameters of slurry.
  • the display terminal 73 may be a conventional display.
  • a computer comprising the signal converter, the calculation module and the display terminal 73 may be used to coupled to the acquisition card 72 .
  • the polishing platen 30 is disposed on the upper surface of the rotary table 20 .
  • the polishing pad 40 having a through-hole is disposed on the upper surface of the polishing platen 30 .
  • the polishing head 10 is opposed to the polishing pad 40 .
  • the device for measuring the physical parameters of the slurry may be the device for measuring the physical parameters of the slurry according to the above embodiments of the present disclosure.
  • the sensor 50 is disposed in the polishing platen 30 and adapted to contact the slurry via the through-hole 41 of the polishing pad 40 for measuring the physical parameters of the slurry.
  • the converter 60 is disposed in the rotary table 20 and coupled to the sensor 50 for converting the measuring signal of the sensor into the standard electrical signal.
  • the processing unit 70 is coupled to the converter 60 for acquiring the standard electrical signal to calculate the physical parameters of the slurry.
  • the physical parameters of the slurry between the wafer 11 and the polishing pad 40 may be in-suit measured and obtained by the chemical mechanical polishing apparatus having the device for measuring the physical parameters of the slurry according to the above embodiments of the present disclosure.
  • the flatness of the wafer 11 may be improved by using the chemical mechanical polishing apparatus to chemical mechanical polish the wafer 11 .
  • the first groove may be formed in the upper surface of the rotary table 20 and covered by the polishing platen 30 to define the first chamber 21 .
  • the converter 60 may be disposed in the first chamber.
  • the second groove may be formed in the upper surface of the polishing platen 30 and covered by the polishing pad 40 to define the second chamber 31 .
  • the sensor 50 may be disposed in the second chamber 31 . When the number of the sensor 50 is large, the sensors 50 may be more conveniently disposed by forming the second groove on the upper surface of the polishing platen 30 .
  • FIG. 5 A method for measuring the physical parameters of the slurry according to an embodiment of the present disclosure will be described referring to FIG. 5 . As shown in FIG. 5 , the method according to an embodiment of the present disclosure comprises the following steps.
  • R j is a radial position of the sensor 50
  • j is a serial number of the sensor 50
  • i is a serial number of an acquisition angle position of physical parameters measuring data.
  • An angle position interval between two adjacent acquisitions may be controlled by controlling the acquisition frequency of the acquisition card 72 depending on requirements.
  • the sensor 50 is rotated with the polishing platen 30 so as to sector scan the whole surface of the wafer, so that distributions of the physical parameters of slurry (such as temperature and/or pressure) between the wafer 11 and the polishing pad 40 are obtained.
  • the number of the sensor 50 is n
  • the acquisition number of the physical parameters measuring data is m.
  • m ⁇ n data may be obtained when the sensor 50 is rotated by one turn with the polishing platen 30 .
  • the physical parameters of slurry may be measured by the corresponding sensor, for instance, the temperature of slurry may be measured by the temperature sensor, or the pressure of slurry may be measured by the pressure sensor, or the temperature and pressure may be measured by the temperature sensor and the pressure sensor, respectively.
  • the physical parameters of the slurry between the polishing head 10 and the polishing pad 40 may be in-suit measured and obtained. Therefore, a flatness of the wafer 11 may be improved based on the measurement data.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US13/387,941 2011-03-10 2011-06-07 Device and Method for Measuring Physical Parameters of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device Abandoned US20120315826A1 (en)

Applications Claiming Priority (2)

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CN201110058436A CN102221416B (zh) 2011-03-10 2011-03-10 抛光液物理参数测量装置、测量方法和化学机械抛光设备
PCT/CN2011/075422 WO2012119354A1 (zh) 2011-03-10 2011-06-07 抛光液物理参数测量装置、测量方法和化学机械抛光设备

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US (1) US20120315826A1 (zh)
CN (1) CN102221416B (zh)
TW (1) TW201236813A (zh)
WO (1) WO2012119354A1 (zh)

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US20130000845A1 (en) * 2011-03-10 2013-01-03 Tsinghua University Device and Method for Measuring Thickness of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device
US20150170978A1 (en) * 2013-12-18 2015-06-18 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor manufacturing apparatus and method thereof
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CN107363730A (zh) * 2017-09-11 2017-11-21 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 涡流检测装置及系统
CN107843378A (zh) * 2017-12-19 2018-03-27 浙江工业大学 液动压悬浮抛光流体压力无线采集系统
CN107991015A (zh) * 2018-01-15 2018-05-04 上海交通大学 一种小型旋转水槽制备泥石流的水压测定系统
CN110281144A (zh) * 2019-07-22 2019-09-27 苏州大学 电诱导辅助化学机械抛光测试装置
WO2022086672A1 (en) * 2020-10-21 2022-04-28 Applied Materials, Inc. Sequential application of cleaning fluids for improved maintenance of chemical mechanical polishing systems
CN113084696B (zh) * 2021-03-08 2022-05-06 长江存储科技有限责任公司 抛光垫及研磨装置
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