TW201236813A - Device and method for measuring physical parameters of polishing slurry and chemical mechanical polishing apparatus - Google Patents

Abstract

A device and a method for measuring physical parameters of a polishing slurry and a chemical mechanical polishing apparatus comprising the device for measuring the physical parameters of the polishing slurry are provided. The chemical mechanical polishing apparatus comprises a polishing head (10), a rotary table (20), a polishing disc (30) and a polishing pad (40), in which the polishing pad (40) is provided with a through hole (41). The device for measuring the physical parameters of the polishing slurry comprises: a sensor (50) disposed in the polishing disc (30) and configured to contact with the polishing slurry via the through hole (41) in the polishing pad (40) so as to measure the physical parameters of the polishing slurry; a transmitter (60) disposed in the rotary table (20) and connected to the sensor (50) for converting a measurement signal of the sensor (50) into a standard electrical signal; a processing unit (70) connected to the transmitter (60) for acquiring the standard electrical signal so as to obtain the physical parameters of the polishing slurry.

Description

201236813 ^ VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a polishing liquid physical parameter measuring device for a chemical mechanical polishing device and a physical parameter measuring device for measuring a polishing liquid physical property using the polishing liquid physical parameter measuring device The present invention also relates to a chemical mechanical polishing apparatus equipped with the polishing liquid physical parameter measuring device. [Prior Art] In the integrated circuit manufacturing process flow, the film layer on the surface of the wafer needs to be flattened and polished. To meet the needs of subsequent processes, chemical mechanical polishing (CMP) is currently the flattening method commonly used. The basic principle of chemical mechanical polishing is: the relative motion required for polishing by the rotation of the polishing head and the polishing disk, the wafer is placed in the polishing head, and the polishing is applied to the surface of the polishing disk, and a certain pressure is applied to the workpiece through the polishing head. The wafer is pressed against the surface of the polishing pad, relying on the relative motion between the wafer and the polishing pad, and finishing the surface of the workpiece by means of abrasive particles in the polishing liquid. On the one hand, chemical mechanical polishing needs to obtain a higher removal rate to improve production efficiency. On the other hand, it requires higher flatness, and the wafer unevenness must be controlled within a reasonable range. Otherwise, the wafer will be scrapped. . In order to achieve better flatness, the polishing pressure needs to be precisely controlled, and many related technologies have been applied, such as regional pressure control technology. However, this control technique can only control the back pressure of the wafer, and the actual pressure distribution between the wafer and the polished crucible is unknown. There is currently no good means to measure. 100128834 Due to the relative movement of the wafer and the polishing crucible, the polishing fluid will form a hydrodynamic lubrication or a mixed lubrication on the contact surface form number A0101, page 4/26, 1^3379002 201236813, and the back pressure actually applied to the back of the wafer is The fluid pressure and the contact pressure share that only the pressure distribution of the fluid can be used to calculate the contact pressure distribution. The contact pressure is the main factor affecting the mechanical action during the actual polishing process. The temperature has a large influence on the physical properties of the polishing pad and the chemical properties of the polishing solution. Therefore, the temperature distribution will also have an effect on chemical mechanical polishing. So figure out the actual pressure and temperature between the wafer and the polishing pad.

[0003]

The cloth condition is important for the implementation of pressure control and for improving the polishing quality of the wafer. So far, the contact pressure distribution of the chemical mechanical polishing contact surface is mostly off-line, and the fluid pressure on the contact surface is based on the model study of the simple test bench. 'The pressure condition under the actual working condition cannot be well revealed, and the temperature is 洌The amount of infrared is not accurate enough. SUMMARY OF THE INVENTION The present invention is directed to at least solving the technical problems existing in the prior art. For this purpose, an object of the present invention is to provide a chemical mechanical polishing apparatus capable of measuring and obtaining physical parameters of a polishing liquid on-line. The polishing liquid physical parameter measuring device. Another object of the present invention is to provide a measuring method for measuring physical parameters of a polishing liquid on the line using the polishing liquid physical parameter measuring device. A further object of the present invention is to provide a device having the physical parameters of the polishing liquid installed. Chemical mechanical polishing equipment. In order to achieve the above object, an embodiment according to a first aspect of the present invention 100128834, a form number A0101, a fifth page, a total of 26 pages, 1003379002-0, 201236813, a polishing liquid physical parameter measuring device for a chemical mechanical polishing device, said chemical mechanical polishing The apparatus includes a polishing head, a turntable, a polishing disk disposed on an upper surface of the turntable, and a polishing pad disposed on an upper surface of the polishing disk opposite to the polishing head, wherein the polishing pad is provided with The through hole, the polishing liquid physical parameter measuring device according to an embodiment of the present invention includes: a sensor disposed in the polishing disk and adapted to be in contact with the polishing liquid through a through hole in the polishing pad to Measuring a physical parameter of the polishing liquid; a transmitter disposed in the turntable and connected to the sensor for converting a measurement signal of the sensor into a standard electrical signal; And a processing unit coupled to the transmitter for acquiring the standard electrical signal to obtain physical parameters of the polishing fluid. A polishing liquid physical parameter measuring device for a chemical mechanical polishing apparatus according to an embodiment of the present invention sets the sensor within the sling, and the sensing ι passes through the through hole and the projection Contacting, and during the chemical mechanical polishing process, the sensing ϋ rotates to scan the entire wafer surface in a 4-shaped form, so the polishing liquid physical parameter measuring device can measure the reduced head on the line And physical parameters of the polishing liquid (ie, physical parameters of the liquid between the wafer and the polishing crucible). The polishing liquid physical parameter measuring device also converts the measurement signal of the sensor into a standard electrical signal by sighing the transmitter connected to the sensor, and by setting the transmitter The physical parameters of the polishing liquid are obtained by connecting (4) to the processing unit. Further, the polishing liquid physical parameter measuring device according to an embodiment of the present invention may have the following additional technical features: 100128834 Form No. 1010101 1003379002-0 Page 6 of 26 201236813 According to an embodiment of the present invention, the turntable a first groove is disposed on the upper surface, the polishing disk covers the first groove to define a first receiving cavity, wherein the transmitter is disposed in the first receiving cavity In one embodiment of the invention, a second groove is disposed on an upper surface of the polishing disk, and the polishing pad covers the second groove to define a second receiving cavity, wherein the sensor is disposed In the second receiving cavity and corresponding to the through hole.

According to an embodiment of the present invention, the polishing liquid physical parameter measuring device further includes a mounting plate, wherein the mounting plate is disposed in the second housing chamber, and the sensor is mounted on the mounting plate. By arranging the mounting plate in the second accommodating chamber, the sensor (particularly when the sensor is plural) can be more conveniently disposed in the second nanocavity.

According to an embodiment of the invention, the plurality of through holes are arranged in plurality and spaced apart in a radial direction of the polishing disk, and the plurality of sensors are arranged in a plurality of intervals along the radial direction of the polishing disk. Wherein the plurality of sensors correspond to the plurality of through holes. By setting a plurality of the sensors, the physical parameters of the polishing liquid between the wafer and the polishing potential can be simultaneously measured at different positions, so that the density of the measurement data can be increased to obtain the polishing liquid more accurately. The distribution of physical parameters / brother. According to the present invention, a plurality of through holes are arranged at equal intervals in the radial direction of the disc, and the multi-individual sensors are arranged at equal intervals in the radial direction of the polishing 100128834. _ a plurality of through holes along the one embodiment according to the present invention, the plurality of sensors are arranged along a plurality of radial directions of the optical disk of the polishing disk, the 1003379002-0 form number A0101 page 7 / Total 26 pages 201236813 Multiple radial arrays into multiple _ dimensional linear arrays. In this way, the density of the measured data can be further increased to thereby obtain the distribution of the physical parameters of the polishing liquid. According to an embodiment of the invention, the plurality of mounting plates are plural, and the plurality of one-dimensional linear arrays are correspondingly mounted on the plurality of mounting plates. According to an embodiment of the invention, the sensor is a temperature sensor and/or a pressure sensor, the transmitter is a temperature transmitter and/or a pressure transmitter, wherein the temperature sensing The device is coupled to the temperature transmitter, the pressure sensor being coupled to the pressure transmitter. According to an embodiment of the invention, the processing unit comprises: a rotating portion of the conductive slip ring that is electrically rotated and mounted on the turntable and connected to the transmission, wherein the rotation of the rotating portion of the conductive slip ring The central axis coincides with the central axis of rotation of the turret; the acquisition card, the stationary portion of the collection and cutting of the conductive slip ring collects the standard electrical signal; the signal converter 'the money conversion n and the The capture card is connected to convert the standard electrical signal into a digital signal; the computing module 'the computing module and the signal conversion target the digital signal to calculate the physical parameter of the polishing liquid; and the display terminal The terminal is connected to the computing module for displaying physical parameters of the polishing liquid. According to an embodiment of the second aspect of the present invention, there is provided a chemical mechanical polishing apparatus comprising: a turntable; a polishing disk, the polishing disk being disposed on an upper surface of the turn 4; a polishing pad disposed on an upper surface of the polishing disk and provided with a through hole; a polishing head opposite to the polishing pad; a polishing liquid physical parameter measuring device, wherein the polishing liquid physical parameter measuring device is based The invention 100128834

Form No. A0101, pp. 8/26, the entire disclosure of which is incorporated herein by reference. The hole is in contact with the polishing liquid to measure physical parameters of the polishing liquid, and the transmitter is disposed in the turntable and connected to the sensor for converting the measurement signal of the sensor into a standard electrical signal, A processing unit is coupled to the transmitter for obtaining the standard electrical signal to obtain physical parameters of the polishing fluid. A chemical mechanical polishing apparatus according to an embodiment of the present invention can measure and obtain a physical property of a polishing liquid between the polishing head and the polishing pad by providing a polishing liquid physical parameter measuring device according to the first aspect of the present invention. Parameters (ie physical parameters of the polishing fluid between the wafer and the polishing pad). Thus, chemical mechanical polishing of the wafer by the chemical mechanical polishing apparatus can improve the flatness of the wafer. According to an embodiment of the present invention, a first groove is disposed on an upper surface of the turntable, the polishing disk covers the first groove to define a first receiving cavity, and the transmitter is disposed at the Said in the first receiving cavity. According to an embodiment of the present invention, a second groove is disposed on an upper surface of the polishing disk, the polishing pad covers the second groove to define a second receiving cavity, and the sensor is disposed at the Said in the second receiving chamber. According to an embodiment of the third aspect of the present invention, there is provided a method for measuring a physical parameter of a polishing liquid, the method comprising: A) utilizing the chemical mechanical polishing process according to any one of the claims a sensor of the polishing liquid physical parameter measuring device scans the entire wafer surface in a fan form, and uses the sensor to measure physical parameters of the polishing liquid to obtain a measurement signal; and B) using the transmitter to transmit the sensor The measurement signal is converted into a standard electrical signal, and then the processing unit obtains the standard electrical signal according to a certain frequency 100128834 Form No. A0101, page 9 / page 26, 1003379002-0 201236813 to obtain the physical parameters of the polishing liquid. The measuring method according to the embodiment of the present invention scans the entire wafer surface in a fan form by using the sensor of the polishing liquid physical parameter measuring device according to the first aspect of the present invention, whereby the physical parameters of the polishing liquid can be measured and obtained on the line. According to an embodiment of the invention, the sensor is a temperature sensor and/or a pressure sensor to measure the temperature and/or pressure of the polishing fluid. The additional aspects and advantages of the invention will be set forth in part in the description which follows. [Embodiment] Embodiments of the present invention are described in detail below, and examples of the embodiments are illustrated in the accompanying drawings, in which the same or similar reference numerals are used to refer to the same or similar elements or elements having the same or similar functions. . The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting. In the description of the present invention, it is to be understood that the terms π vertical ", horizontal ", " upper ", "lower", "previous", "back", M left", n right The orientation or positional relationship of the indications such as "," "vertical", "level", "top", "inside" and "outside" are based on the orientation or positional relationship shown in the drawings, for convenience of description only. The invention and the simplification of the invention are not to be construed as limiting or limiting the invention. Moreover, the terms π first ", M second are used for descriptive purposes only, and are not to be construed as indicating or implying relative importance. In the description of the present invention, unless otherwise specified and limited, 100128834 form number A0101 is required. Page 10 of 26 page 1003379002-0 201236813 The term "terminology" is installed, "connected", "connected", should be understood in a broad sense, for example, it can be mechanical or electrical, or two The internal communication of the components may be directly connected or indirectly connected through an intermediate medium. For those skilled in the art, the specific meanings of the above terms may be understood according to specific situations. A polishing liquid physical parameter measuring device for a chemical mechanical polishing apparatus according to an embodiment of the invention. As shown in Figures 1-4, the chemical mechanical polishing apparatus includes a polishing head 10, a turntable 2, and a turntable a polishing disk 30 on the upper surface and a polishing pad 4 disposed on the upper surface of the polishing disk 30 and opposite to the polishing head 10, wherein the polishing pad 40 is provided with a through hole 41. According to the present invention The polishing liquid physical parameter measuring apparatus of the embodiment includes a sensor 50, a transmitter 60, and a processing unit 70. The sensor 50 is disposed in the polishing disk 30 and is adapted to be in contact with the polishing liquid through the through hole 41 in the polishing pad 40. To measure the physical parameters of the polishing liquid, the transmitter 60 is disposed in the turntable 20 and connected to the sensor 5A for converting the measurement signal of the sensor 50 into a standard electrical signal. The processing unit 70 and the transmission The device 60 is connected to obtain the standard electrical signal to obtain physical parameters of the polishing liquid. The polishing liquid physical parameter measuring device for the chemical mechanical polishing device according to the embodiment of the invention is provided with a sensor in the polishing disk 3〇 50, the sensor 50 is in contact with the polishing liquid through the through hole 41 on the polishing pad 4, and the sensor 5 is rotated in the chemical mechanical polishing process to scan the entire wafer surface in a fan shape. Therefore, the polishing liquid physical parameter measuring device can measure the physical parameters of the polishing liquid on the line. The polishing liquid physical parameter measuring device also measures the sensor 50 by setting the transmitter 60 connected to the sensor 50. The number is converted to a standard electrical signal, and is obtained by setting the processing unit 70 connected to the transmitter 60 to obtain the 100128834 form number A0101 page 11 / total 26 page 1003379002-0 201236813 physical parameter β of the polishing liquid in the present invention In some embodiments, the upper surface of the turntable 20 may be provided with a first groove, the polishing disk 3〇 may cover the first groove to define the first receiving cavity 2, and the transmitter 60 may be disposed at the first In a receiving chamber 21, as shown in Fig. 4, in some embodiments of the present invention, the through holes 41 may be plural and arranged in a radial interval along the polishing disk 30, and the sensor 50 may It is plural and arranged in a radial interval along the polishing disk 3 ,, wherein the plurality of sensors 50 may correspond to the plurality of through holes 41. That is, the number and position of the sensors 50 correspond to the number and position of the through holes 4, respectively. By providing a plurality of sensors 50, the physical parameters of the polishing liquid between the wafer 11 and the polishing pad 40 can be simultaneously measured at different positions, so that the density of the measurement data can be increased to more accurately obtain the physical properties of the polishing liquid. The distribution of the parameters. In one specific example of the invention, a plurality of sensors 50 may be arranged in a radial separation of the polishing disks 30 in a one-dimensional linear array. Specifically, the plurality of through holes 41 may be equally spaced in the radial direction of the polishing disk 3〇, and the plurality of sensors 5〇 may be arranged at equal intervals in the radial direction of the polishing disk 3〇, wherein the plurality of sensors 5〇 can correspond to the plurality of through holes 41. In some examples of the invention, the sensor 5A may be a temperature sensor and/or a pressure sensor 'Transmitter 60 may be a temperature transmitter and/or a pressure transmitter, wherein the temperature sense A detector is coupled to the temperature transmitter 'the pressure sensor is coupled to the pressure transmitter. In a specific example of the present invention, the sensor 50 may be a temperature sensor and may be plural, and the plurality of temperature sensors may be arranged in a one-dimensional manner along the radial direction of the polishing disk 3 〇 Linear array. In another example of the present invention having a 100128834 form number Α0101 1003379002-0 page 12/26 page 201236813, the sensor 5 〇 may be a pressure sensor and may be a plurality of, the plurality of pressure sensing The devices may be arranged in a one-dimensional linear array spaced radially apart from the polishing disk 3 . Specifically, the sensor 5A may be a plurality of temperature sensors and a plurality of pressure sensors, and the plurality of temperature sensors and the plurality of pressure sensors may respectively follow the diameter of the polishing disk 3 A linear array of one-dimensional temperature sensors and a linear array of one-dimensional pressure sensors are arranged spaced apart to simultaneously measure the temperature and pressure of the polishing liquid.

100128834 As shown in FIG. 4, in one embodiment of the present invention, a plurality of through holes 41 may be arranged along a plurality of radial directions of the polishing disk 30, and a plurality of sensors 5A may be along the plurality of polishing disks 30. Radially arranged into a plurality of one-dimensional linear arrays. This can further increase the density of the measurement data, thereby more accurately obtaining the distribution of the physical parameters of the polishing liquid. The one-dimensional linear array may include one sensor 5A, and may also include a plurality of sensors 50. The plurality of temperature sensors may be arranged in a plurality of radial directions of the plurality of one-dimensional temperature sensors along the plurality of radial electrodes of the polishing disk 3 , or may be arranged in a plurality of radial directions of the plurality of pressure sensors along the polishing disk 30 . A plurality of one-dimensional force sensor linear arrays, and a plurality of temperature sensors and a plurality of force sensors are arranged in a plurality of radial directions along the polishing disk 3G to form a plurality of dimensional temperature sensors linearly The array and a plurality of one-dimensional pressure sensors are linearly arrayed to simultaneously measure the degree and pressure of the polishing fluid. Specifically, the plurality of one-dimensional linear arrays may be uniformly disposed in the polishing disk 30, that is, the plurality of one-dimensional linear arrays may be disposed equiangularly within the polishing disk 3〇, adjacent to the two of the one-dimensional The angle of the linear array spacing (eg, 90 degrees) can be the same. In some examples of the invention, the polishing disk 30 may be provided with a mounting hole sensor 50 that may be mounted within the mounting hole. When the sensor 5 is set to one, it is possible to set one of the I holes. When the sensor 5() encodes A0101 s 1 ο *5· / u 〇ύ - ε - 1 003379002-0 201236813 for a plurality of forms, a plurality of the mounting holes may be provided, and the sensor 50 may correspondingly Installed in the mounting hole. As shown in FIG. 1, in some embodiments of the present invention, the upper surface of the polishing disk 30 may be provided with a second groove, and the polishing pad 40 may cover the second groove to define the second receiving cavity 31. The sensor 50 may be disposed in the second housing chamber 31. When the number of the sensors 50 is large, the sensor 50 can be more conveniently disposed by arranging the second grooves on the upper surface of the polishing pad 30. In a specific example of the present invention, the polishing liquid physical parameter measuring device may further include a mounting plate 80 which may be disposed in the second accommodating chamber 31, and the sensor 50 may be mounted on the mounting plate 80. By providing the mounting plate 80 in the second accommodating cavity 31, the sensor 50 (particularly when the sensor 50 is plural) can be further disposed in the second accommodating cavity 31, and a plurality of sensors can be made. 50 is more conveniently and accurately arranged radially spaced along the polishing disk 30. Specifically, the mounting plate 80 may be elongated, and both ends of the elongated strip are arcuate so as to be engageable with the inner wall of the second accommodating chamber 31. In an embodiment of the present invention, the mounting board 80 may be multiple, and the plurality of one-dimensional linear arrays may be correspondingly mounted on the plurality of mounting boards 80, that is, one of the one-dimensional linear arrays may be installed in one installation. On board 80. As shown in FIG. 1, in some embodiments of the present invention, processing unit 70 may include a conductive slip ring 71, a capture card 72, a signal converter, a computing module, and a display terminal 73. The rotating portion of the conductive slip ring 71 can be mounted to the turntable 20 and can be coupled to the transmitter 60, with the central axis of rotation of the rotating portion of the conductive slip ring 71 coinciding with the central axis of rotation of the turntable 20. Thus 100128834 Form No. A0101 Page 14 of 26 1003379002-0 201236813

The rotating part can be rotated by the county (four). At the same time, 72, the static material of the conductive slip ring 71 is connected to the quasi-electrical signal. The signal converter can be connected to the acquisition switch to convert the standard telecommunications to -«. It is expected that the disk can be connected to the disk to calculate the number of revolutions of the polishing liquid using the digital signal. Display (4) can be called the calculation module connected to display the physical parameters of the polishing liquid. Specifically, the display terminal 73 can lick an existing display. In a specific example of the present invention, a computer can be connected to the capture card 72, and the computer has the signal converter, the computing module, and the display terminal 73. A chemical mechanical polishing apparatus according to an embodiment of the present invention will be described below with reference to Fig. 1. As shown in Fig. 1, a chemical mechanical polishing apparatus according to an embodiment of the present invention includes a turntable 20, a polishing pad 3, a polishing pad 4, a polishing head 1 and a polishing liquid physical parameter measuring device. The polishing pad 30 is disposed on the upper surface of the turntable 20, and the polishing pad 4 is disposed on the upper surface of the polishing pad 3''' and is provided with a through hole, and the polishing head 10 is opposed to the polishing pad 40. The polishing liquid physical parameter measuring device is the above-mentioned polishing liquid physical parameter measuring device. Wherein, the sensor 50 is disposed in the polishing pad 30 and is adapted to contact the polishing liquid through the through hole 41 in the polishing crucible to measure physical parameters of the polishing liquid, and the transmitter 60 is disposed in the turntable 20 and Connected to the sensor 50 for converting the measurement signal of the sensor 50 into a standard electrical signal, the processing unit 7 is coupled to the transmitter 60 for acquiring the standard electrical signal to obtain the physical parameters of the polishing liquid. The chemical mechanical polishing apparatus according to the embodiment of the present invention can measure and obtain the physical parameters of the polishing liquid between the wafer 11 and the polishing pad 40 by setting the polishing liquid physical parameter measuring device. Thus, the benefit 100128834 form number Α 0101 page 15 / total 26 page 1 (201236813 learning mechanical glazing can use the chemical mechanical polishing equipment to refine the wafer n to improve the flatness of the wafer 11. 'On the turntable 20 On the surface

Covering the first recess to define a second receiving cavity 31. In a specific example of the present invention, the turntable is provided with a first recess, and the polishing disc 30 can cover the first receiving cavity 21, and the error is changed. As shown in FIG. 1, the polishing pad 40 can be covered, and the sensor 50 can be disposed in the second receiving cavity 31. The sensor 50 can be more conveniently disposed by arranging the second groove on the upper surface of the polishing disk 30 when the number of the sensors 5 is large. A method of measuring the physical parameters of the polishing liquid according to an embodiment of the present invention will be described below with reference to FIG. As shown in FIG. 5, the measuring method according to an embodiment of the present invention includes: A) in the chemical mechanical polishing process, the sensor 50 of the polishing liquid physical parameter measuring device is used to scan the entire crystal in a fan form. Round surface, and measuring the physical parameters of the polishing liquid by the sensor 50 to obtain a measurement signal; and B) converting the measurement signal of the sensor 5 为 into a standard electrical signal by using the transmitter 60, and then using the processing unit 70 The standard electrical parameters are obtained at a certain frequency to pass the physical parameters of the polishing liquid. Specifically, as shown in Fig. 5, R" is the radial position of the sensor 5A, j is the number of the sensor 50, and i is the number of the acquisition angle position of the physical parameter measurement data. The sampling frequency of the acquisition card 72 can be controlled as needed to control the angular position interval of two adjacent acquisitions. The sensor 50 rotates with the disc 310 so that the sensor 50 sweeps across the entire 100128834. Form No. A0101 Page 16 of 26 1003379002-0 201236813

The surface of the wafer is such that the distribution of physical parameters (e.g., temperature and pressure) of the polishing liquid over the entire contact surface of the wafer 11 and the polishing pad 4 is obtained. For example, if the number of the sensors 50 is n and the number of times the physical parameter measurement data is acquired is m times, the sensor 50 can obtain mxn data as the polishing disk 30 rotates one revolution. As shown in Fig. 5, the distance measurement data is collected at the position of i = i, and the distance measurement data is collected at the position of i = m. It is used to measure a certain physical parameter of the polishing liquid by using the corresponding sensing person. For example, a temperature sensor is used to measure the temperature of the polishing liquid, or a pressure sensor is used to measure the pressure of the polishing liquid, or a temperature sensor and a pressure sensor are used to measure the temperature and pressure of the polishing liquid. The polishing liquid physical parameter measuring apparatus for the chemical mechanical polishing apparatus according to the embodiment of the present invention can measure and obtain the physical parameters of the polishing liquid between the polishing head 1 and the polishing pad 40 on the line. This makes it possible to obtain a flatness of the wafer 11 by using a chemical mechanical (4) device equipped with a polishing liquid physical parameter measuring device. In the description of this specification, reference is made to the term "one embodiment", "

The description of the embodiment examples, "specific examples", or "some examples" and the like means that the specific features, structures, materials, or characteristics described in connection with the embodiments or examples are included in the present invention. In an embodiment or example. In the present specification, the schematic representation of the above terms does not refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described in the above may be combined in any suitable embodiment or example. While the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications and substitutions may be made to these embodiments without departing from the spirit and scope of the invention. Form No. A0101, page 17 of 26,368,368, and variations, the scope of the present invention is defined by the scope of the patent application and its equivalents. [Simplified Description of the Drawings] [0005] The above and/or additional aspects and advantages of the present invention are The description of the embodiments will become apparent and easy to understand in conjunction with the following drawings in which: FIG. 1 is a schematic structural diagram of a polishing liquid physical parameter measuring apparatus according to an embodiment of the present invention; FIG. 3 is a schematic structural view of a polishing liquid physical parameter measuring device according to still another embodiment of the present invention; FIG. 4 is a schematic structural view of a polishing liquid physical parameter measuring device according to still another embodiment of the present invention; The figure is a schematic view of measuring physical parameters of a polishing liquid using a polishing liquid physical parameter measuring device according to an embodiment of the present invention. [Main component symbol description] [0006] CMP chemical mechanical polishing 10 polishing head 11 wafer 20 turret 21 first accommodating chamber 30 polishing disk 31 second accommodating cavity 40 polishing pad 41 through hole 5 0 sensor 100128834 Form No. A0101 Page 18 / 26 pages 1003379002-0 201236813 60 Transmitter 70 processing unit 71 conductive slip ring 72 acquisition card 73 display terminal 80 mounting plate j sensor 5 0 i physical parameter measurement data acquisition angle position R. sensing Radial position of the device 50

J

CJ 100128834 Form No. A0101 Page 19 of 26 1003379002-0

Claims (1)

201236813 VII. Patent application scope: 1. A polishing liquid physical parameter measuring device for a chemical mechanical polishing device, the chemical mechanical polishing device comprising a polishing head, a turntable, and a polishing disk disposed on an upper surface of the turntable And a polishing pad disposed on an upper surface of the polishing disk and opposite to the polishing head, wherein the polishing pad is provided with a through hole, wherein the polishing liquid physical parameter measuring device comprises: a sensor, The sensor is disposed in the polishing disk and is adapted to contact a polishing liquid through a through hole in the polishing pad to measure a physical parameter of the polishing liquid; a transmitter, the transmitter is disposed at the a turret coupled to the sensor for converting a measurement signal of the sensor into a standard electrical signal; and a processing unit coupled to the transmitter for acquiring the standard An electrical signal is obtained to obtain physical parameters of the polishing liquid. 2. The polishing liquid physical parameter measuring device for a chemical mechanical polishing apparatus according to claim 1, wherein the upper surface of the turntable is provided with a first groove, and the polishing disk covers the first The recess defines a first receiving cavity, wherein the transmitter is disposed within the first receiving cavity. 3. The polishing liquid physical parameter measuring apparatus for a chemical mechanical polishing apparatus according to claim 1, wherein the polishing disk has a second groove on an upper surface thereof, and the polishing pad covers the second The groove defines a second receiving cavity, wherein the sensor is disposed in the second receiving cavity and corresponds to the through hole. 4. The polishing liquid physical parameter measuring device for a chemical mechanical polishing apparatus according to claim 3, further comprising a mounting plate, wherein the mounting plate is disposed in the second receiving cavity, The sensor is installed on the mounting plate at 100128834 Form No. A0101 Page 20 / Total 26 Page 1003379002-0 201236813. 5. The polishing liquid physical parameter measuring apparatus for a chemical mechanical polishing apparatus according to claim 4, wherein the through holes are plural and are arranged spaced apart in a radial direction of the polishing disk, characterized in that The plurality of sensors are spaced apart and spaced apart in a radial direction of the polishing disk, wherein the plurality of sensors correspond to the plurality of through holes. 6. For the polishing of chemical mechanical polishing equipment as described in claim 5 ϋ photo-liquid physical parameter measuring device, wherein the plurality of through holes are arranged at equal intervals in the radial direction of the polishing disk, characterized in that the plurality of sensors are arranged at equal intervals in the radial direction of the polishing disk . 7. The polishing liquid physical parameter measuring apparatus for a chemical mechanical polishing apparatus according to claim 5, wherein the plurality of through holes are arranged along a plurality of radial directions of the polishing disk, wherein A plurality of sensors are arranged in a plurality of one-dimensional linear arrays along a plurality of radial directions of the polishing disk. 8. The polishing liquid physical parameter measuring apparatus for a chemical mechanical polishing apparatus according to claim 7, wherein the plurality of mounting plates are plural, and the plurality of one-dimensional linear arrays are correspondingly mounted on The polishing liquid physical parameter measuring device for a chemical mechanical polishing device according to any one of claims 1 to 8, wherein the sensor is a temperature sensor and/or a pressure sensor, the transmitter being a temperature transmitter and/or a pressure transmitter, wherein the temperature sensor is coupled to the temperature transmitter, the sense of pressure A detector is coupled to the pressure transmitter. 10. The polishing liquid physical parameter measuring apparatus for a chemical mechanical polishing apparatus according to claim 1, wherein the processing unit comprises 100128834 Form No. A0101 Page 21 / Total 26 Page 1003379002-0 201236813 a conductive slip ring to which a rotating portion of the conductive slip ring is mounted and connected to the transmitter, wherein a central axis of rotation of the rotating portion of the conductive slip ring and a rotation of the turntable a central axis coincides; a capture card, the capture card is coupled to the stationary portion of the conductive slip ring to collect the standard electrical signal; a signal converter, the signal converter is coupled to the capture card to convert the standard Converting a signal into a digital signal; a computing module, the computing module being coupled to the signal converter to calculate a physical parameter of the polishing fluid using the digital signal; and a display terminal, the display terminal and the computing The modules are connected for displaying the physical parameters of the polishing liquid. 11. A chemical mechanical polishing apparatus, comprising: a rotary table; a polishing disk disposed on an upper surface of the turntable; a polishing pad, the polishing pad being disposed on the polishing disk a through hole on the surface; a polishing head opposite to the polishing pad; a polishing liquid physical parameter measuring device, wherein the polishing liquid physical parameter measuring device is as in any one of claims 1-10 The polishing liquid physical parameter measuring device, wherein the sensor is disposed in the polishing disk and is adapted to contact the polishing liquid through a through hole in the polishing pad to measure physical parameters of the polishing liquid, and transmit Is disposed in the turntable and connected to the sensor for converting the measurement signal of the sensor into a standard electrical signal, and the processing unit is connected to the transmitter for acquiring the standard electrical signal To obtain the physical parameters of the polishing liquid. 12. The chemical mechanical polishing apparatus according to claim 11, wherein the structure is 100128834, the form number A0101, the 22nd page, and the 26th page, 1003379002-0 201236813, wherein the first surface of the turntable is provided with a first groove. The polishing disk covers the first groove to define a first receiving cavity, and the transmitter is disposed in the first receiving cavity. The chemical mechanical polishing apparatus according to claim 11 or 12, wherein a second groove is provided on an upper surface of the polishing disk, and the polishing pad covers the second groove A second receiving cavity is defined, and the sensor is disposed in the second receiving cavity. 14. A method of measuring a physical parameter of a polishing liquid, characterized in that: the method of measuring comprises: A) utilizing a physical parameter of a polishing liquid according to any one of claims 10 to 10 in the chemical mechanical polishing process. The sensor of the measuring device scans the entire wafer surface in a fan form, and uses the sensor to measure the physical parameters of the polishing liquid to obtain a measurement signal; and B) converts the measurement signal of the sensor by using a transmitter As a standard electrical signal, the standard electrical signal is then acquired by the processing unit at a certain frequency to obtain the physical parameters of the polishing liquid. The measuring method according to claim 14, wherein the sensor is a temperature sensor and/or a pressure sensor to measure the temperature and/or pressure of the polishing liquid. 100128834 Form No. A0101 Page 23 of 26 1003379002-0