US20080054166A1 - Detachably coupled image intensifier and image sensor - Google Patents
Detachably coupled image intensifier and image sensor Download PDFInfo
- Publication number
- US20080054166A1 US20080054166A1 US11/929,216 US92921607A US2008054166A1 US 20080054166 A1 US20080054166 A1 US 20080054166A1 US 92921607 A US92921607 A US 92921607A US 2008054166 A1 US2008054166 A1 US 2008054166A1
- Authority
- US
- United States
- Prior art keywords
- image
- image sensor
- fiber optic
- image intensifier
- intensifier tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000835 fiber Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000007689 inspection Methods 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 34
- 230000027455 binding Effects 0.000 claims description 31
- 238000009739 binding Methods 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 26
- 230000007547 defect Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 239000013013 elastic material Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 37
- 238000005286 illumination Methods 0.000 description 18
- 238000013459 approach Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000001475 halogen functional group Chemical group 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 101000694017 Homo sapiens Sodium channel protein type 5 subunit alpha Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/1765—Method using an image detector and processing of image signal
- G01N2021/177—Detector of the video camera type
- G01N2021/1772—Array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4704—Angular selective
- G01N2021/4711—Multiangle measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4735—Solid samples, e.g. paper, glass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
- G01N2021/479—Speckle
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4792—Polarisation of scatter light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8845—Multiple wavelengths of illumination or detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/069—Supply of sources
- G01N2201/0696—Pulsed
- G01N2201/0697—Pulsed lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
Definitions
- An image intensifier typically includes a vacuum tube with a photocathode unit at one end and a screen unit at the other end.
- the photocathode unit converts incoming photons to electrons which are accelerated by an electric field (potential difference) in the tube until they hit a screen unit converting them back to photons.
- a method of separating an image intensifier tube detachably coupled to an image sensor comprising: a) providing an image intensifier tube detachably coupled to an image sensor; and b) separating the image intensifier tube from the image sensor; wherein the separating does not substantially damage the image intensifier tube nor the image sensor.
- a method of inspecting a sample comprising: a) providing an image intensifier tube detachably coupled to an image sensor; b) separating the image intensifier tube from the image sensor; c) coupling at least one of the separated image intensifier tube and image sensor in a combination of image intensifier tube and image sensor; d) directing optical radiation onto an area of a surface of a sample to be inspected; e) receiving the radiation scattered from the area using the combination coupled in (c) so as to form a respective image of the area; and f) processing the image so as to detect a defect on the surface.
- FIG. 1A is a schematic, pictorial illustration of an image intensifier detachably coupled to an image sensor, according to an embodiment of the present invention
- FIG. 2 is a block diagram that schematically illustrates a system for optical inspection, according to an embodiment of the present invention.
- FIG. 3 is a schematic side view of an optical collection module including image intensifiers detachably coupled to image sensors, according to an embodiment of the present invention.
- Described herein are embodiments of the present invention relating to an image intensifier and image sensor which are detachably coupled together, and to methods and systems using such a combination.
- the combination can no longer be used once the image intensifier tube and/or image sensor fails (assuming for example, that the failed part cannot be repaired or cannot be partially replaced saving the other part while coupled together).
- the image intensifier tube and image sensor are detachably coupled together, the image intensifier and image sensor can possibly be detached.
- the image intensifier tube fails, the image sensor may be still be used, for example by detaching the failed image intensifier tube from the image sensor and coupling a replacement image intensifier tube to the detached image sensor.
- the image intensifier tube fails, the converse may in some cases be true and when an image sensor fails, the failed image sensor may be detached from the image intensifier and a replacement image sensor may be coupled to the detached image intensifier tube.
- the example of detaching the detachably coupled together image intensifier tube and image sensor in order to replace a failed element should be understood to be a non-limiting example and detachment for any reason is within the scope of the invention.
- the image intensifier tube and image sensor may be detached in order to clean, repair, inspect, upgrade, etc. one or the other of the elements.
- the detached image intensifier tube and image sensor may be re-coupled together instead of to replacement image sensor or image intensifier tube respectively.
- the detached image intensifier may be used independently of any image sensor and/or the detached image sensor may be used independently of any image intensifier, for example the detached image intensifier may be used in front of a photomultiplier tube PMT.
- the image sensor is comprised in a camera which also comprises necessary electronics. Therefore it may in some cases be more technically accurate to describe the image intensifier as being detachably coupled to the camera.
- the term camera does not always have a uniform meaning in the art, for clarity of description the terminology used below describes the image sensor as being detachably coupled to the image intensifier or refers to a detachable combination of image intensifier tube and image sensor.
- DIIS Detachable combination of image Intensifier tube and Image Sensor.
- FIG. 1A is a schematic view of a DIIS 10 comprising an image intensifier 16 detachably coupled to an image sensor 34 , according to an embodiment of the present invention.
- image intensifier 16 may be an image intensifier of any generation and/or using any focusing method, as appropriate.
- first generation image intensifiers are intensifier diodes that utilize only a single potential difference to accelerate electrons from the cathode to the anode (screen).
- second generation image intensifiers utilize electron multipliers, i.e., not only the energy but also the number of electrons between input and output is significantly increased. Multiplication is achieved by use of a device called a microchannel plate (MCP), i.e. a thin plate of conductive glass containing many small holes.
- MCP microchannel plate
- the “third generation image intensifiers” employ MCP intensifiers with Gallium-Arsenide photocathodes (instead of multialkali photocathodes as Cs, Sb, K, Na, etc. normally used in first and second generation intensifiers or instead of bi-alkali or solar blind (CsTs) sometimes used in first or second generation intensifiers) to increase a luminous sensitivity of approximately 1,200 ⁇ A/lm instead of 300 ⁇ A/lm found in the multialkali photocathodes. These GaAs photocathodes are also much more sensitive in the NIR region of the light spectrum. Modified third generation image intensifiers which are filmless (i.e. without an ion barrier film) are sometimes termed “fourth generation image intensifiers” or may be grouped under the term “third generation image intensifiers”.
- focusing is achieved by any of three approaches.
- the first approach includes placing the screen in close proximity to the photocathode (proximity focus image intensifier).
- electrodes focus electrons originating from the photocathode onto the screen (electrostatic image intensifier or inverter image intensifier).
- a magnetic field parallel to the optical axis causes electrons to complete exactly one (or complete multiplication of one) full turn (magnetically focused image intensifier).
- image sensor 34 can be any suitable solid state optical image sensor.
- suitable solid state optical image sensors which can be used as image sensor 34 include inter-alia: a charge coupled device (CCD) or a complementary-symmetry metal-oxide semiconductor (CMOS) device.
- CCD charge coupled device
- CMOS complementary-symmetry metal-oxide semiconductor
- a first fiber optic plate 22 is connected to a photo-emitting output area (back face) of screen unit 20 .
- a second fiber optic plate 32 connects to a photosensitive input area (front face) of image sensor 34 .
- each fiber optic plate 22 and 32 is less than 4 fringes (surface quality).
- one or both of fiber optic plates 22 and 32 have a mechanism for reduced crosstalk (for example fiber optic plate with extra mural absorption EMA).
- First fiber optic plate 22 and second fiber optic plate 32 are aligned (put into the correct relative position) so that the light issuing from screen unit 20 is transmitted to the photosensitive input surface of image sensor 34 .
- a detachable attaching medium is used to detachably attach image intensifier tube 16 to image sensor 34 .
- the term “detachable” refers to an attaching medium which will stop attaching when separation of image intensifier 16 and image sensor 34 from one another is desired.
- the detachable attaching medium can be removed, released, counteracted, etc. when separation of image intensifier 16 and image sensor 34 from one another is desired. Due to the usage of the detachable attaching medium, the attachment of image sensor 16 and image intensifier 34 as well as the separation of image sensor 16 and image intensifier 34 can be achieved without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 34 , image intensifier 16 or fiber optic plates 22 and 32 ).
- the detachable attaching medium at least includes an elastic material which allows fiber optic plates 22 and 32 to be pushed close together (for example, when attaching image intensifier 16 and image sensor 34 to one another) without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 16 , image intensifier 34 , and/or fiber optic plates 22 and 32 ).
- elastic material include inter-alia: spring(s), sponge(s), rubber, etc.
- detachable attaching medium 50 includes: spring(s) 56 , screws 51 , 53 , and 58 , and mechanical parts 52 and 54 .
- One or more springs 56 in conjunction with one or more screws 58 are used to connect mechanical part 52 to mechanical part 54 .
- Mechanical part 52 is shown connected to a camera 70 comprising image sensor 34 and mechanical part 54 is shown connected to image intensifier 14 .
- mechanical part 52 is shown directly and detachably connected to camera 70 with one or more screws 51 , in other embodiments mechanical part 52 can be indirectly and/or permanently attached to camera 70 . In other embodiments, mechanical part 52 can be directly or indirectly attached, either detachably or non-detachably to image sensor 34 .
- mechanical part 54 is shown detachably and directly connected to image intensifier 16 with one or more screws 53 , in other embodiments, mechanical part 54 may be indirectly and/or permanently attached to image intensifier tube 16 .
- mechanical part 52 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34 ) and image intensifier 16 , or for example between camera 70 (or image sensor 34 ) and mechanical part 54 .
- mechanical part 54 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34 ) and image intensifier 16 , or for example between mechanical part 52 and image intensifier 16 .
- detachable attachable medium 50 can include screws and springs, with camera 70 held detachably and firmly (for example with screws) to image intensifier tube 16 , and inside camera 70 , image sensor 34 “floats” on springs.
- FIG. 1A illustrates only one example of possible detachable attaching medium.
- the detachable attaching medium may comprise less than all of elements 51 , 52 , 53 , 54 , 56 , and 58 .
- the detachable attaching medium may comprise additional elements in addition to elements 51 , 52 , 53 , 54 , 56 , and 58 .
- the detachable attaching medium may comprise elements different than some or all of elements 51 , 52 , 53 , 54 , 56 , and 58 .
- the functionality provided by elements 51 , 52 , 53 , 54 , 56 , and 58 may be distributed differently among those elements.
- the image intensifier in the DIIS may use any focusing approach, in some applications it may be advantageous to have an image intensifier which is magnetically focused.
- the usage of a magnetically focused image intensifier in a particular application provides superior optical performance and/or the possibility of enhancing the lifetime of the image intensifier (compared to a proximity focused or electrostatic focused image intensifier).
- the superior optical performance includes any of the following inter-alia: better resolution, lower halo, and the possibility of having a potential difference greater than 10 to 15 KV in the image intensifier and therefore a higher gain.
- FIG. 1B illustrates a DIIS which comprises a magnetically focused image intensifier according to an embodiment of the present invention.
- FIG. 1B replicates the DIIS illustrated in FIG. 1A , however also illustrates is a magnet 60 which surrounds image intensifier 16 .
- a magnetic field produced by a magnet 60 parallel to the optical axis, causes electrons to complete exactly one full turn.
- image intensifier 16 as magnetically focused in FIG. 1B should not be construed as binding.
- the image intensifier in a DIIS of this invention may use any focusing approach, which may vary depending on the embodiment.
- any of the other screw(s) 51 , 53 may also be unscrewed, and/or any of elements in FIG. 1A which are detachable (for example, any of elements 51 , 52 , 53 , 54 , 56 , and 58 ) may be removed.
- the non-binding filling which filled the gap between the two fiber optic plates corresponding respectively to the image sensor and image intensifier is removed any time after detaching the image intensifier tube and image sensor from one another.
- the detached image intensifier and/or image sensor is later detachably attached to each other or to another element, new non-binding filling is applied if necessary.
- the non-binding filling is not necessarily removed and may optionally be reused when later detachably attaching one or both of the detached image intensifier and/or the image sensor to each other or to another element.
- FIG. 2 is a block diagram that schematically illustrates a system 220 for optical inspection of a semiconductor wafer 222 , in accordance with an embodiment of the present invention.
- wafer 222 is patterned, using methods of semiconductor device production known in the art, and system 220 applies dark-field optical techniques to detect defects on the surface of the wafer.
- system 220 applies dark-field optical techniques to detect defects on the surface of the wafer.
- the principles embodied in system 220 may be applied to unpatterned wafers and to inspection of other types of samples and surfaces as well, such as masks and reticles.
- system 220 is dedicated to dark-field inspection, aspects of the present invention may also be applied in bright-field inspection, as well as in other areas of illumination, inspection and imaging.
- System 220 comprises an illumination module 224 , which illuminates the surface of sample 222 using pulsed laser radiation.
- module 224 is able to emit the laser radiation selectably at two or more different wavelengths, either simultaneously or one at a time.
- the laser radiation at any of the laser wavelengths may be directed by module 224 to impinge on wafer 222 either along a normal to the wafer surface or obliquely, as described in further detail in US Published Application Number 20050219518.
- the illumination module may be configured to emit optical radiation at wavelengths in the visible, ultraviolet (UV) and/or infrared (IR) ranges.
- UV visible, ultraviolet
- IR infrared
- Module 226 comprises collection optics 228 , which image the surface of wafer 222 onto multiple DIIS 230 .
- Optics 228 may comprise either a single objective with high numerical aperture (NA) or a collection of individual objectives, one for each DIIS 230 . Details of both of these alternative optical configurations are described in further detail in US Published Application Number 20050219518, and details of DIIS 230 are described hereinbelow.
- Optics 228 and DIIS 230 are arranged so that all the DIIS image the same area on the wafer surface, i.e., the area illuminated by illumination module 224 , while each DIIS 230 captures the radiation that is scattered into a different angular range.
- Each DIIS 230 includes a two-dimensional array of detector elements, such as a CCD or CMOS array, as is known in the art. Each detector element of each of the arrays is imaged onto a corresponding spot within the area irradiated by illumination module 224 . Thus, the scattering characteristics of any given spot on wafer 222 as a function of angle can be determined based on the signals generated by the corresponding detector elements in the different DIIS 230 .
- DIIS 230 are typically synchronized with the laser pulses from illumination module by a system controller 232 , so that each image output frame generated by each DIIS 230 corresponds to the radiation scattered from a single laser pulse.
- the output from each DIIS 230 is received, digitized and analyzed by an image processor 234 .
- the image processor which is described in further detail in U.S. Published Application Number 20050219518, typically comprises dedicated hardware signal processing circuits and/or programmable digital signal processors (DSPs).
- a mechanical scanner such as an X-Y-Z stage 236 translates wafer 222 , typically in a raster pattern, so that each laser pulse from illumination module 224 irradiates a different area of the surface of the wafer, adjacent to (and typically slightly overlapping with) the area irradiated by the preceding pulse.
- the illumination and collection modules may be scanned relative to the wafer.
- Image processor 234 processes each of the image frames that is output by each DIIS 230 in order to extract image features that may be indicative of defects on the wafer surface.
- the image features are passed to a host computer 238 , typically a general-purpose computer workstation with suitable software, which analyzes the features in order to generate a defect list (or defect map) with respect to the wafer under inspection.
- Controller 232 also adjusts the Z-position (height) of stage 236 in order to maintain the proper focus of DIIS 230 on the wafer surface.
- the controller may adjust the DIIS optics for this purpose.
- the controller may instruct image processor 234 and host computer 238 to correct for deviations in the scale and registration of the images captured by different DIIS 230 so as to compensate for height variations.
- controller 232 uses an auto-focus illuminator 240 and an auto-focus sensor module 242 .
- Illuminator 240 typically comprises a laser (not shown), such as a CW diode laser, which emits a collimated beam at an oblique angle onto or adjacent to the area of the surface of wafer 222 that is illuminated by illumination module 224 , forming a spot on the wafer surface. Variations in the Z-position of wafer 222 relative to collection module 226 will then result in transverse displacement of the spot.
- Sensor module 242 typically comprises a detector array (also not shown), which captures an image of the spot on the wafer surface.
- the image of the spot is analyzed in order to detect the transverse position of the spot, which provides controller 32 with a measurement of the Z-position of the wafer surface relative to the collection module.
- the controller may drive stage 236 until the spot is in a pre-calibrated reference position, indicative of proper focus.
- illuminator 240 may pass through collection optics 228 on its way to the wafer surface, and sensor module 242 may likewise capture the image of the spot on the surface through the collection optics.
- illuminator 240 preferably operates in a different wavelength range from illumination module 224 .
- appropriate filters may be used to block scatter of the auto-focus beam into DIIS 230 , as well as preventing interference of the pulsed beam from module 224 with the auto-focus measurement.
- a capacitive sensor may be used to determine and adjust the vertical distance between the optics and the wafer surface.
- FIG. 3 is a schematic side view of collection module 226 , in accordance with an embodiment of the present invention.
- module 226 is shown as comprising five DIIS 230 .
- module 226 may comprise a smaller or greater number of DIIS, typically as many as ten DIIS.
- all the DIIS image scattered radiation from a common area 348 on the surface of wafer 222 , but each DIIS is configured to collect the radiation along a different angular axis (i.e., a different elevation and/or azimuth).
- system 220 is designed mainly for use in dark-field detection, one or more of DIIS 230 may be used for bright-field detection, as well, in conjunction with either the normal-incidence or oblique-incidence illumination beam.
- An objective 350 collects and collimates the scattered light from area 348 .
- objective 350 preferably has a high NA, most preferably as high as 0.95.
- An exemplary design of objective 350 using multiple refractive elements, is described further in U.S. Published Application Number 20050219518.
- objective 350 may comprise a reflective or catadioptric element, as described, for example, in U.S. Pat. No. 6,392,793 to Chuang et al, which is hereby incorporated by reference herein.
- Each of DIIS 230 is positioned, as shown in FIG. 3 , to receive a particular angular portion of the light collected by objective 350 .
- a bandpass filter 352 selects the wavelength range that the DIIS is to receive. Typically, filter 352 selects one of the two wavelengths emitted by illumination module 224 , while rejecting the other wavelength. Filter 352 may also be implemented as a dichroic beamsplitter, and configured so that one DIIS 230 receives the scattered light along a given angle at one wavelength, while another DIIS receives the scattered light along the same angle at the other wavelength. As a further alternative, filter 352 may be chosen to pass radiation in another wavelength range, such as a band in which wafer 222 is expected to fluoresce.
- a spatial filter 354 can be used to limit the collection angle of each DIIS 230 , by blocking certain regions of the collimated scattered light.
- the spatial filter is especially useful in eliminating background diffraction from repetitive features on patterned wafers.
- the spatial filter is chosen, based on the known diffraction pattern of the features on the wafer surface, to block these strong diffraction nodes, in order to enhance the sensitivity of system 220 to actual defects, as is known in the art.
- This use of spatial filtering for this purpose is described, for example, in U.S. Pat. No. 6,686,602 to Some, whose disclosure is incorporated herein by reference.
- This patent describes a method for creating spatial filters adaptively, in response to the diffraction lobes of different sorts of wafer patterns. This method may be implemented in filters 354 in module 226 . Alternatively, spatial filters 354 may comprise fixed patterns, as is known in the art.
- the optical path may comprise a beamsplitter, which divides the light scattered along a given collection angle between two or more different DIIS 230 .
- the beamsplitter may be used for wavelength division, as mentioned above, or to divide the same wavelength between the two or more DIIS in a predetermined proportionality.
- Different spatial filters 354 may be used following the beamsplitter in the beam paths to the different DIIS, in order to filter out diffraction lobes due to different sorts of patterns on the wafer.
- the beamsplitter may divide the light scattered along a given angle unequally between two or more of the DIIS, for example, in a ratio of 100:1.
- a focusing lens 358 focuses the collected and filtered light onto DIIS 230 .
- Lens 358 may be adjustable, either manually or under motorized control.
- a variable magnifier 360 may be used to change the size of the magnified image received by the DIIS. Alternatively, the functions of lens 358 and magnifier 360 may be combined within a single optical unit for each DIIS.
- the magnifier determines the resolution of the image captured by DIIS 230 , i.e., the size of the area on the wafer surface that corresponds to each pixel in the output image from the DIIS.
- Magnifier 360 is typically operated in conjunction with telescopes in illumination module 224 , so that size of the illuminated area is roughly equal to the area imaged by the DIIS.
- intensifier 362 preferably has high bandwidth and high resolution, and is preferably capable of gated operation, with high current and low phosphor memory, at the repetition rate of laser head 50 —typically up to about 1000 pulses per sec.
- the useful diameter of intensifier 362 is preferably at least 18 mm. In another embodiment, a larger diameter of intensifier 362 , in the range of 25-40 mm, is used.
- intensifier 362 may be achieved by any approach (proximity, electrostatic, magnetic), in one embodiment, intensifier 362 is magnetically focused and results in superior optical performance and/or the possibility of enhancing the lifetime, as described above.
- the image intensifiers 362 in addition to amplifying the incident scattered light, are also useful in downconverting the ultraviolet (UV) and blue light that is scattered from wafer 222 to the green or red range, to which the silicon image sensors are more responsive.
- intensifiers 362 act as low-pass spatial filters, and may thus help to smooth high-frequency structures in the scattered light that might otherwise cause aliasing in the images output by sensors 366 .
- Intensifiers 362 are preferably designed to suppress such reflections so that the halo diameter is no more than 0.2 mm in any case. Furthermore, in order to exploit the full range of sensitivity of sensor 366 , intensifier 362 should exhibit linear behavior up to high maximum output brightness (MOB), typically on the order of 600 ⁇ W/cm 2 .
- MOB maximum output brightness
- single fiber optic plate 22 coupled to a photo-emitting output area of image intensifier tube 16 (or 362 ) and a single fiber optic plate 32 coupled to a photosensitive input area of image sensor 34 (or 366 ) with a gap between the two plates filled with a non-binding filling 40 .
- single fiber optic plate 22 may be replaced with a plurality of fiber optic plates 22 and/or single fiber optic plate 32 may be replaced with a plurality of fiber optic plates 32 .
- That fiber optic plate 22 / 32 can be considered to belong to one or two pairs of adjacent fiber optic plates, respectively.
- the gap between one pair of adjacent fiber optic plates 22 / 32 is filled with non-binding filling 40 , but the selection of which pair of adjacent plates 22 / 32 out of all possible pairs of adjacent plates 22 / 32 has the gap filled with non-binding filling 40 may vary depending on the embodiment.
- the detachable attaching medium is assumed to include an elastic material which at least allows the pair of third and fourth fiber optic plates to be pushed close together and the pair of second and fourth fiber optic plates to be pushed close together without substantially damaging any of the fiber optic plates (for example first, second, third and fourth fiber optic plates), image sensor 34 ( 366 ) and/or image intensifier 16 ( 362 ).
- the detachment process may include inter-alia the separation of second and fourth fiber optic from one another and/or the separation of third and fourth fiber optic plates from one another.
Landscapes
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Lasers (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
A detachably coupled image intensifier and image sensor combination is disclosed along with systems and methods for using the detachably coupled image intensifier and image sensor combination. In one embodiment, there are at least two fiber optic plates aligned between the image intensifier and image sensor, and an oil or a gel is used to fill some or all of the gap(s) between pair(s) of adjacent fiber optic plates. In one embodiment, the detachably coupled image intensifier and image sensor combination is used for sample inspection.
Description
- This application is a divisional of application Ser. No. 11/516,668 filed Sep. 7, 2006, which is a continuation-in-part of U.S. Ser. No. 10/511,092, filed Apr. 26, 2005; itself a national stage application of PCT/US03/28062, filed Sep. 8, 2003; which claims the benefit of U.S.
Provisional Patent Application 60/415,082, filed Sep. 30, 2002. - This application also claims the benefit of U.S.
Provisional Application 60/715,927, U.S.Provisional Patent Application 60/715,900, and U.S.Provisional Application 60/715,901. Said applications were all filed on Sep. 8, 2005 and are hereby incorporated by reference herein. - This invention relates to image intensifier tubes.
- Image intensifier tubes (also known as IIT or image intensifiers) are widely used for sensing and amplifying, or intensifying, light images of low intensity. In these devices, light (usually of visible or near infra-red spectra) from an associated optical system is directed onto a photocathode which emits a distribution of photoelectrons in response to the input radiation.
- An image intensifier typically includes a vacuum tube with a photocathode unit at one end and a screen unit at the other end. The photocathode unit converts incoming photons to electrons which are accelerated by an electric field (potential difference) in the tube until they hit a screen unit converting them back to photons.
- The output of the image intensifier tube is fed into a solid state optical image sensor such as a charge coupled device (CCD) or a complementary metal-oxide semiconductor (CMOS) device. The combination of the image intensifier tube and image sensor is sometimes referred to as an intensified image sensor device ICCD or ICMOS.
- In U.S. Pat. No. 4,980,772 to Kawamura et al, some examples of current methods of coupling the image intensifier tube to an image pickup device are disclosed. In one method, a thin fiber plate is interposed between a phosphor layer of the screen of the image intensifier tube and a photosensitive layer of the image pickup device. In another method, two fiber plates are used to couple an image intensifier tube to the image pickup device. In yet another method, a fiber plate on the output surface of the image intensifier tube is bound to an image pickup device by means of an adhesive.
- According to the present invention there is provided an apparatus for intensifying and sensing images, comprising: an image intensifier tube; an image sensor; at least two fiber optic plates aligned between a photo-emitting output area of the image intensifier tube and a photosensitive input area of the image sensor so as to allow light issuing from the image intensifier tube to be transmitted to the image sensor; non-binding filling which fills at least one gap which is between at least one pair of adjacent fiber optic plates among the at least two fiber optic plates; and a detachable attaching medium detachably coupling between the image intensifier tube and the image sensor.
- According to the present invention there is also provided a method of separating an image intensifier tube detachably coupled to an image sensor, comprising: a) providing an image intensifier tube detachably coupled to an image sensor; and b) separating the image intensifier tube from the image sensor; wherein the separating does not substantially damage the image intensifier tube nor the image sensor.
- According to the present invention there is further provided an apparatus for inspection of a sample, comprising: a radiation source, which is adapted to direct optical radiation onto an area of a surface of the sample; at least one image intensifier, each of which is detachably coupled to an image sensor, so as to receive the radiation from the area over a certain angular range, and to provide intensified radiation to the image sensor; and at least one image sensor, each of which is configured to receive radiation from at least one image intensifier, so as to form at least one respective image of the area.
- According to the present invention there is provided a method of inspecting a sample, comprising: a) providing at least one image intensifier tube detachably coupled to an image sensor with non-binding filling; b) directing optical radiation onto an area of a surface of a sample to be inspected; c) receiving and intensifying the radiation scattered from the area using the at least one provided detachably coupled image intensifier tube and image sensor, so as to form a respective images of the area, each of the provided detachably coupled image intensifier tube and image sensor being configured to receive the radiation that is scattered to into a different, respective angular range; and d) processing at least one of the respective images so as to detect a defect on the surface.
- According to the present invention there is also provided a method of inspecting a sample comprising: a) providing an image intensifier tube detachably coupled to an image sensor; b) separating the image intensifier tube from the image sensor; c) coupling at least one of the separated image intensifier tube and image sensor in a combination of image intensifier tube and image sensor; d) directing optical radiation onto an area of a surface of a sample to be inspected; e) receiving the radiation scattered from the area using the combination coupled in (c) so as to form a respective image of the area; and f) processing the image so as to detect a defect on the surface.
- In order to understand the invention and to see how it may be carried out in practice, a preferred embodiment will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:
-
FIG. 1A is a schematic, pictorial illustration of an image intensifier detachably coupled to an image sensor, according to an embodiment of the present invention; -
FIG. 1B is a schematic pictorial illustration of a magnetically focused image intensifier detachably coupled to an image sensor, according to an embodiment of the present invention; -
FIG. 2 is a block diagram that schematically illustrates a system for optical inspection, according to an embodiment of the present invention; and -
FIG. 3 is a schematic side view of an optical collection module including image intensifiers detachably coupled to image sensors, according to an embodiment of the present invention. - Described herein are embodiments of the present invention relating to an image intensifier and image sensor which are detachably coupled together, and to methods and systems using such a combination.
- As used herein, the phrase “for example,” “such as” and variants thereof describing exemplary implementations of the present invention are exemplary in nature and not limiting.
- For example, when an image intensifier tube and image sensor are permanently coupled together, the combination can no longer be used once the image intensifier tube and/or image sensor fails (assuming for example, that the failed part cannot be repaired or cannot be partially replaced saving the other part while coupled together). However, if the image intensifier tube and image sensor are detachably coupled together, the image intensifier and image sensor can possibly be detached. For example, say the image intensifier tube fails, the image sensor may be still be used, for example by detaching the failed image intensifier tube from the image sensor and coupling a replacement image intensifier tube to the detached image sensor. Although in this example it is assumed that the image intensifier tube fails, the converse may in some cases be true and when an image sensor fails, the failed image sensor may be detached from the image intensifier and a replacement image sensor may be coupled to the detached image intensifier tube. The example of detaching the detachably coupled together image intensifier tube and image sensor in order to replace a failed element should be understood to be a non-limiting example and detachment for any reason is within the scope of the invention. For example, the image intensifier tube and image sensor may be detached in order to clean, repair, inspect, upgrade, etc. one or the other of the elements. In some cases, the detached image intensifier tube and image sensor may be re-coupled together instead of to replacement image sensor or image intensifier tube respectively. In some cases, the detached image intensifier may be used independently of any image sensor and/or the detached image sensor may be used independently of any image intensifier, for example the detached image intensifier may be used in front of a photomultiplier tube PMT.
- Typically although not necessarily, the image sensor is comprised in a camera which also comprises necessary electronics. Therefore it may in some cases be more technically accurate to describe the image intensifier as being detachably coupled to the camera. However since the term camera does not always have a uniform meaning in the art, for clarity of description the terminology used below describes the image sensor as being detachably coupled to the image intensifier or refers to a detachable combination of image intensifier tube and image sensor.
- Hereinbelow, in order to improve readability, the abbreviation “DIIS” is used for Detachable combination of image Intensifier tube and Image Sensor.
-
FIG. 1A is a schematic view of aDIIS 10 comprising animage intensifier 16 detachably coupled to animage sensor 34, according to an embodiment of the present invention. - In the illustrated embodiment,
image intensifier tube 16 includes aphotocathode unit 14, for example a multialkali photocathode layer on a glass substrate and ascreen unit 20, for example a phosphor layer structure on a glass (fiber optic plate) substrate. Any other suitable photocathode and/or screen unit may be used instead. - Depending on the embodiment,
image intensifier 16 may be an image intensifier of any generation and/or using any focusing method, as appropriate. As is known in the art, there are several known generations of image intensifiers: The so-called “first generation image intensifiers” are intensifier diodes that utilize only a single potential difference to accelerate electrons from the cathode to the anode (screen). The “second generation image intensifiers” utilize electron multipliers, i.e., not only the energy but also the number of electrons between input and output is significantly increased. Multiplication is achieved by use of a device called a microchannel plate (MCP), i.e. a thin plate of conductive glass containing many small holes. In these holes, secondary electron emission occurs which leads to multiplication factors of up to four orders of magnitude. The “third generation image intensifiers” employ MCP intensifiers with Gallium-Arsenide photocathodes (instead of multialkali photocathodes as Cs, Sb, K, Na, etc. normally used in first and second generation intensifiers or instead of bi-alkali or solar blind (CsTs) sometimes used in first or second generation intensifiers) to increase a luminous sensitivity of approximately 1,200 μA/lm instead of 300 μA/lm found in the multialkali photocathodes. These GaAs photocathodes are also much more sensitive in the NIR region of the light spectrum. Modified third generation image intensifiers which are filmless (i.e. without an ion barrier film) are sometimes termed “fourth generation image intensifiers” or may be grouped under the term “third generation image intensifiers”. - In these intensifiers, focusing is achieved by any of three approaches. The first approach includes placing the screen in close proximity to the photocathode (proximity focus image intensifier). In the second electrostatic approach, electrodes focus electrons originating from the photocathode onto the screen (electrostatic image intensifier or inverter image intensifier). In the third magnetic focus approach, a magnetic field parallel to the optical axis causes electrons to complete exactly one (or complete multiplication of one) full turn (magnetically focused image intensifier).
- In some cases,
image intensifier 16 may have more than one focusing, for example if an MCP is used, and the more than one focusing may all use the same focusing approach or may use a plurality of different focusing approaches. - Depending on the embodiment,
image sensor 34 can be any suitable solid state optical image sensor. Examples of possible solid state optical image sensors which can be used asimage sensor 34 include inter-alia: a charge coupled device (CCD) or a complementary-symmetry metal-oxide semiconductor (CMOS) device. - As illustrated in
FIG. 1A , a firstfiber optic plate 22 is connected to a photo-emitting output area (back face) ofscreen unit 20. A secondfiber optic plate 32 connects to a photosensitive input area (front face) ofimage sensor 34. In one embodiment each 22 and 32 is less than 4 fringes (surface quality). In one embodiment, one or both offiber optic plate 22 and 32 have a mechanism for reduced crosstalk (for example fiber optic plate with extra mural absorption EMA).fiber optic plates - First
fiber optic plate 22 and secondfiber optic plate 32 are aligned (put into the correct relative position) so that the light issuing fromscreen unit 20 is transmitted to the photosensitive input surface ofimage sensor 34. - Typically, there is a small gap between first
fiber optic plate 22 and secondfiber optic plate 32. In one embodiment, the gap is about 0 to 5 microns. Therefore, a non-binding filling 40 is used to fill the gap between the two 22 and 34. It should be understood by the reader, that the term “non-binding” filling 40 refers to a filling which allows the twoplates 22 and 32 to be separated from one another (and thereforefiber optic plates image intensifier tube 16 andimage sensor 34 to be separated from one another) without substantially damaging the DIIS 10 (for example without substantially damaging any ofimage sensor 34,image intensifier 16 orfiber optic plates 22 and 32). - Non-binding filling 40 has an index of refraction which is closer to the index of refraction of
22 and 34, than the index of refraction of air is to the index of refraction of the fiber optic plates, thereby preventing or minimizing Fresnel reflections. (Without non-binding filling 40, Fresnel reflections would probably occur at the interface between the fiber optic plate and air due to the different refractive indices). For example, non-binding filling 40 may have an index of refraction similar tofiber optic plates 22 and 32. Continuing with the example, the index of refraction of non-binding filling 40 may be about 1.8. In another example, the index of refraction of non-binding filling 40 is not an identical match to that of the fiber optic plates. Continuing with the example, the index of non-binding filling 40 may be about 1.5.fiber optic plates - Non-binding filling 40 can be for example a gel or an oil. In one embodiment, non-binding filling 40 has minimal outgassing. The size of the gap and the index value stated above are provided solely for further illustration to the reader and should not be construed as limiting.
- A detachable attaching medium is used to detachably attach
image intensifier tube 16 to imagesensor 34. The reader should understand that the term “detachable” refers to an attaching medium which will stop attaching when separation ofimage intensifier 16 andimage sensor 34 from one another is desired. For example, the detachable attaching medium can be removed, released, counteracted, etc. when separation ofimage intensifier 16 andimage sensor 34 from one another is desired. Due to the usage of the detachable attaching medium, the attachment ofimage sensor 16 andimage intensifier 34 as well as the separation ofimage sensor 16 andimage intensifier 34 can be achieved without substantially damaging DIIS 10 (for example without substantially damaging any ofimage sensor 34,image intensifier 16 orfiber optic plates 22 and 32). - In one embodiment the detachable attaching medium at least includes an elastic material which allows
22 and 32 to be pushed close together (for example, when attachingfiber optic plates image intensifier 16 andimage sensor 34 to one another) without substantially damaging DIIS 10 (for example without substantially damaging any ofimage sensor 16,image intensifier 34, and/orfiber optic plates 22 and 32). Examples of elastic material include inter-alia: spring(s), sponge(s), rubber, etc. - In the illustrated embodiment of
FIG. 1A , detachable attachingmedium 50 includes: spring(s) 56, screws 51, 53, and 58, and 52 and 54. One ormechanical parts more springs 56 in conjunction with one ormore screws 58 are used to connectmechanical part 52 tomechanical part 54.Mechanical part 52 is shown connected to acamera 70 comprisingimage sensor 34 andmechanical part 54 is shown connected toimage intensifier 14. Althoughmechanical part 52 is shown directly and detachably connected tocamera 70 with one ormore screws 51, in other embodimentsmechanical part 52 can be indirectly and/or permanently attached tocamera 70. In other embodiments,mechanical part 52 can be directly or indirectly attached, either detachably or non-detachably to imagesensor 34. Althoughmechanical part 54 is shown detachably and directly connected toimage intensifier 16 with one ormore screws 53, in other embodiments,mechanical part 54 may be indirectly and/or permanently attached toimage intensifier tube 16. In other embodimentsmechanical part 52 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34) andimage intensifier 16, or for example between camera 70 (or image sensor 34) andmechanical part 54. In other embodiments,mechanical part 54 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34) andimage intensifier 16, or for example betweenmechanical part 52 andimage intensifier 16. In another embodiment, detachable attachable medium 50 can include screws and springs, withcamera 70 held detachably and firmly (for example with screws) toimage intensifier tube 16, and insidecamera 70,image sensor 34 “floats” on springs. - In one embodiment, first
fiber optic plate 22 andimage intensifier 16 are commercially available as one unit and/or permanently coupled together and are thus shown inFIG. 1A . In one embodiment, secondfiber optic plate 32,camera 70 andimage sensor 34 are commercially available as one unit and/or permanently coupled together and are thus shown inFIG. 1A . However it should be evident that in other embodiments, some or all of these elements may be detachably coupled to one another. For example, in one embodiment,image sensor 34 may be detachably coupled tocamera 70. - It should be evident that
FIG. 1A illustrates only one example of possible detachable attaching medium. In other embodiments, the detachable attaching medium may comprise less than all of 51, 52, 53, 54, 56, and 58. In other embodiments, the detachable attaching medium may comprise additional elements in addition toelements 51, 52, 53, 54, 56, and 58. In other embodiments, the detachable attaching medium may comprise elements different than some or all ofelements 51, 52, 53, 54, 56, and 58. In other embodiments, the functionality provided byelements 51, 52, 53, 54, 56, and 58 may be distributed differently among those elements.elements - Although as mentioned above image the image intensifier in the DIIS may use any focusing approach, in some applications it may be advantageous to have an image intensifier which is magnetically focused. For example, in some cases the usage of a magnetically focused image intensifier in a particular application provides superior optical performance and/or the possibility of enhancing the lifetime of the image intensifier (compared to a proximity focused or electrostatic focused image intensifier). In some of these cases the superior optical performance includes any of the following inter-alia: better resolution, lower halo, and the possibility of having a potential difference greater than 10 to 15 KV in the image intensifier and therefore a higher gain.
- For the sake of further illustration to the reader,
FIG. 1B illustrates a DIIS which comprises a magnetically focused image intensifier according to an embodiment of the present invention. For simplicity's sakeFIG. 1B replicates the DIIS illustrated inFIG. 1A , however also illustrates is amagnet 60 which surroundsimage intensifier 16. A magnetic field produced by amagnet 60, parallel to the optical axis, causes electrons to complete exactly one full turn. -
Magnet 60 is shown detachably attached tomechanical part 52 with one or more screws 62 inFIG. 1B . Inother embodiments magnet 60 can be placed aroundimage intensifier 14 using a different technique. - The illustration of
image intensifier 16 as magnetically focused inFIG. 1B should not be construed as binding. The image intensifier in a DIIS of this invention may use any focusing approach, which may vary depending on the embodiment. - The combination of elements in a DIIS may vary depending on the embodiment and is not limited to the combination of elements illustrated in
FIG. 1A or 1B. At a minimum, a DIIS comprises an image sensor and an image intensifier in a detachable combination. However, other elements shown inFIG. 1A or 1B may in some embodiments be omitted from a DIIS. In some embodiments, additional elements not shown inFIGS. 1A and 1B may be included in a DIIS. - In some embodiments, the image intensifier tube and the image sensor in the DIIS are later detached from one another. For example, assume an image intensifier tube and an image sensor have been previously detachably connected together into a DIIS, for example as illustrated in
FIG. 1A . Assuming the configuration illustrated inFIG. 1A , at a later point in time,image intensifier tube 16 and firstfiber optic plate 22 may be detached fromimage sensor 34 and secondfiber optic plate 32, without substantially damaging DIIS 10 (for example without substantially damaging any ofimage sensor 16,image intensifier 34, and/orfiber optic plates 22 and 32). For example, at least screw(s) 58 may be unscrewed, releasing the connection between 52 and 54. Optionally, depending on the embodiment, any of the other screw(s) 51, 53 may also be unscrewed, and/or any of elements inmechanical parts FIG. 1A which are detachable (for example, any of 51, 52, 53, 54, 56, and 58) may be removed.elements - Once detached, the image intensifier tube and/or image sensor may be retained as is, processed as is (for example inspected), modified (for example repaired, upgraded, or cleaned) or discarded. Optionally, the detached image intensifier tube and/or image sensor may be re-attached together, or one or both may be reattached to another element (e.g. to respectively another image sensor or image intensifier tube, or to a different device). For example, in one embodiment, detachment may occur upon the failure or degradation of the image intensifier tube and the detached image sensor may later be attached to another image intensifier tube, either detachably as described above or permanently. It is also possible that one or both of the detached image intensifier tube and/or image sensor may not be later attached to any other element.
- In one embodiment, the non-binding filling which filled the gap between the two fiber optic plates corresponding respectively to the image sensor and image intensifier, is removed any time after detaching the image intensifier tube and image sensor from one another. In this embodiment, if the detached image intensifier and/or image sensor is later detachably attached to each other or to another element, new non-binding filling is applied if necessary. However, in another embodiment, the non-binding filling is not necessarily removed and may optionally be reused when later detachably attaching one or both of the detached image intensifier and/or the image sensor to each other or to another element.
- Applications which incorporate one or more DIIS in accordance with embodiments described above are not limited by the invention. For further illumination to the reader, however, it will now be described an application incorporating an embodiment of a DIIS, namely a dark field inspection system for inspecting wafers as described in co-pending and co-assigned U.S. Ser. No. 10/511,092 (U.S. published application number 20050219518), said application hereby incorporated by reference herein
FIG. 2 is a block diagram that schematically illustrates asystem 220 for optical inspection of asemiconductor wafer 222, in accordance with an embodiment of the present invention. Typically,wafer 222 is patterned, using methods of semiconductor device production known in the art, andsystem 220 applies dark-field optical techniques to detect defects on the surface of the wafer. Alternatively, however, the principles embodied insystem 220 may be applied to unpatterned wafers and to inspection of other types of samples and surfaces as well, such as masks and reticles. Furthermore, althoughsystem 220 is dedicated to dark-field inspection, aspects of the present invention may also be applied in bright-field inspection, as well as in other areas of illumination, inspection and imaging. -
System 220 comprises anillumination module 224, which illuminates the surface ofsample 222 using pulsed laser radiation. Typically,module 224 is able to emit the laser radiation selectably at two or more different wavelengths, either simultaneously or one at a time. The laser radiation at any of the laser wavelengths may be directed bymodule 224 to impinge onwafer 222 either along a normal to the wafer surface or obliquely, as described in further detail in US Published Application Number 20050219518. The illumination module may be configured to emit optical radiation at wavelengths in the visible, ultraviolet (UV) and/or infrared (IR) ranges. The terms “illumination” and “optical radiation” as used herein should therefore be understood as referring to any or all of the visible, UV and IR ranges. - The radiation scattered from
wafer 222 is collected over a large range of angles by anoptical collection module 226.Module 226 comprisescollection optics 228, which image the surface ofwafer 222 ontomultiple DIIS 230.Optics 228 may comprise either a single objective with high numerical aperture (NA) or a collection of individual objectives, one for eachDIIS 230. Details of both of these alternative optical configurations are described in further detail in US Published Application Number 20050219518, and details ofDIIS 230 are described hereinbelow.Optics 228 andDIIS 230 are arranged so that all the DIIS image the same area on the wafer surface, i.e., the area illuminated byillumination module 224, while eachDIIS 230 captures the radiation that is scattered into a different angular range. EachDIIS 230 includes a two-dimensional array of detector elements, such as a CCD or CMOS array, as is known in the art. Each detector element of each of the arrays is imaged onto a corresponding spot within the area irradiated byillumination module 224. Thus, the scattering characteristics of any given spot onwafer 222 as a function of angle can be determined based on the signals generated by the corresponding detector elements in thedifferent DIIS 230. -
DIIS 230 are typically synchronized with the laser pulses from illumination module by asystem controller 232, so that each image output frame generated by eachDIIS 230 corresponds to the radiation scattered from a single laser pulse. The output from eachDIIS 230 is received, digitized and analyzed by animage processor 234. The image processor which is described in further detail in U.S. Published Application Number 20050219518, typically comprises dedicated hardware signal processing circuits and/or programmable digital signal processors (DSPs). A mechanical scanner, such as an X-Y-Z stage 236 translateswafer 222, typically in a raster pattern, so that each laser pulse fromillumination module 224 irradiates a different area of the surface of the wafer, adjacent to (and typically slightly overlapping with) the area irradiated by the preceding pulse. Alternatively or additionally, the illumination and collection modules may be scanned relative to the wafer. -
Image processor 234, processes each of the image frames that is output by eachDIIS 230 in order to extract image features that may be indicative of defects on the wafer surface. The image features are passed to ahost computer 238, typically a general-purpose computer workstation with suitable software, which analyzes the features in order to generate a defect list (or defect map) with respect to the wafer under inspection. - The area irradiated by
module 224 and imaged byDIIS 230 can be scanned using stage 236 over the entire wafer surface, or over a selected area of the surface. If the pulses emitted bymodule 224 are sufficiently short, substantially less than 1 μs, for example, stage 236 may translatewafer 222 continuously in this manner without causing significant blur in the images captured by the DIIS. The irradiated area typically has dimensions on the order of 2×1 mm, although the area can be enlarged or reduced using magnification optics in the illumination module as described in more detail in U.S. Published Application Number 20050219518. Assuming eachDIIS 230 includes an array of about 2000×1000 detector elements, the size of each pixel projected onto the wafer surface is then roughly 1×1 μm. Withmodule 224 operating at a repetition rate of 400 pulses/sec, the data output rate of eachDIIS 230 toimage processor 234 will be 800 Mpixels/sec. At this rate, for instance, an entire 12″ semiconductor wafer can be scanned at 1 μm resolution in less than 2 min. It will be understood, however, that these typical figures of image resolution, size and speed are cited solely by way of example, and larger or smaller figures may be used depending on system speed and resolution requirements. -
Controller 232 also adjusts the Z-position (height) of stage 236 in order to maintain the proper focus ofDIIS 230 on the wafer surface. Alternatively or additionally, the controller may adjust the DIIS optics for this purpose. Further alternatively or additionally, the controller may instructimage processor 234 andhost computer 238 to correct for deviations in the scale and registration of the images captured bydifferent DIIS 230 so as to compensate for height variations. - In order to verify and adjust the focus,
controller 232 uses an auto-focus illuminator 240 and an auto-focus sensor module 242. Illuminator 240 typically comprises a laser (not shown), such as a CW diode laser, which emits a collimated beam at an oblique angle onto or adjacent to the area of the surface ofwafer 222 that is illuminated byillumination module 224, forming a spot on the wafer surface. Variations in the Z-position ofwafer 222 relative tocollection module 226 will then result in transverse displacement of the spot.Sensor module 242 typically comprises a detector array (also not shown), which captures an image of the spot on the wafer surface. The image of the spot is analyzed in order to detect the transverse position of the spot, which providescontroller 32 with a measurement of the Z-position of the wafer surface relative to the collection module. The controller may drive stage 236 until the spot is in a pre-calibrated reference position, indicative of proper focus. - The beam emitted by illuminator 240 may pass through
collection optics 228 on its way to the wafer surface, andsensor module 242 may likewise capture the image of the spot on the surface through the collection optics. In this case, illuminator 240 preferably operates in a different wavelength range fromillumination module 224. Thus, appropriate filters may be used to block scatter of the auto-focus beam intoDIIS 230, as well as preventing interference of the pulsed beam frommodule 224 with the auto-focus measurement. - Alternatively, other means of auto-focus detection may be used, as are known in the art. For example, a capacitive sensor may be used to determine and adjust the vertical distance between the optics and the wafer surface.
-
FIG. 3 is a schematic side view ofcollection module 226, in accordance with an embodiment of the present invention. In this embodiment and in the embodiment shown inFIG. 2 ,module 226 is shown as comprising fiveDIIS 230. Alternatively,module 226 may comprise a smaller or greater number of DIIS, typically as many as ten DIIS. As noted above, all the DIIS image scattered radiation from acommon area 348 on the surface ofwafer 222, but each DIIS is configured to collect the radiation along a different angular axis (i.e., a different elevation and/or azimuth). Althoughsystem 220 is designed mainly for use in dark-field detection, one or more ofDIIS 230 may be used for bright-field detection, as well, in conjunction with either the normal-incidence or oblique-incidence illumination beam. - An objective 350 collects and collimates the scattered light from
area 348. In order to collect scattered light at low elevation, objective 350 preferably has a high NA, most preferably as high as 0.95. An exemplary design of objective 350, using multiple refractive elements, is described further in U.S. Published Application Number 20050219518. Alternatively, objective 350 may comprise a reflective or catadioptric element, as described, for example, in U.S. Pat. No. 6,392,793 to Chuang et al, which is hereby incorporated by reference herein. Each ofDIIS 230 is positioned, as shown inFIG. 3 , to receive a particular angular portion of the light collected byobjective 350. - For each
DIIS 230, abandpass filter 352 selects the wavelength range that the DIIS is to receive. Typically,filter 352 selects one of the two wavelengths emitted byillumination module 224, while rejecting the other wavelength.Filter 352 may also be implemented as a dichroic beamsplitter, and configured so that oneDIIS 230 receives the scattered light along a given angle at one wavelength, while another DIIS receives the scattered light along the same angle at the other wavelength. As a further alternative,filter 352 may be chosen to pass radiation in another wavelength range, such as a band in whichwafer 222 is expected to fluoresce. For example, when organic materials, such as photoresist, are irradiated at 266 nm, they tend to fluoresce in the range of 400 nm. Thus, setting filter 152 to pass light in the 400 nm band allowsDIIS 230 to detect defects in the organic material or residues thereof. - A
spatial filter 354 can be used to limit the collection angle of eachDIIS 230, by blocking certain regions of the collimated scattered light. The spatial filter is especially useful in eliminating background diffraction from repetitive features on patterned wafers. The spatial filter is chosen, based on the known diffraction pattern of the features on the wafer surface, to block these strong diffraction nodes, in order to enhance the sensitivity ofsystem 220 to actual defects, as is known in the art. This use of spatial filtering for this purpose is described, for example, in U.S. Pat. No. 6,686,602 to Some, whose disclosure is incorporated herein by reference. This patent describes a method for creating spatial filters adaptively, in response to the diffraction lobes of different sorts of wafer patterns. This method may be implemented infilters 354 inmodule 226. Alternatively,spatial filters 354 may comprise fixed patterns, as is known in the art. - A
rotatable polarizer 356 is provided in the optical path in order to select the direction of polarization of scattered light that is to be received byDIIS 230. The polarizer is useful, for example, in improving detection sensitivity by rejecting background scatter due to rough and/or highly-reflective surface structures onwafer 222. Optionally,polarizer 356 is implemented as a polarizing beamsplitter, which is configured so that two DIIS 230 receive the light scattered along a given angle in orthogonal polarizations. - As a further option (not shown in the figures), the optical path may comprise a beamsplitter, which divides the light scattered along a given collection angle between two or more
different DIIS 230. The beamsplitter may be used for wavelength division, as mentioned above, or to divide the same wavelength between the two or more DIIS in a predetermined proportionality. Differentspatial filters 354 may be used following the beamsplitter in the beam paths to the different DIIS, in order to filter out diffraction lobes due to different sorts of patterns on the wafer. As a further alternative, the beamsplitter may divide the light scattered along a given angle unequally between two or more of the DIIS, for example, in a ratio of 100:1. This arrangement effectively increases the dynamic range ofsystem 220, since the DIIS receiving the smaller share of the radiation is still able to generate meaningful image data even in areas of bright scatter, in which the DIIS receiving the larger share of the radiation is saturated. An arrangement of this sort is described, for example, in U.S. Pat. No. 6,657,714 to Almogy et al whose disclosure is incorporated herein by reference. - A focusing
lens 358 focuses the collected and filtered light ontoDIIS 230.Lens 358 may be adjustable, either manually or under motorized control. A variable magnifier 360 may be used to change the size of the magnified image received by the DIIS. Alternatively, the functions oflens 358 and magnifier 360 may be combined within a single optical unit for each DIIS. The magnifier determines the resolution of the image captured byDIIS 230, i.e., the size of the area on the wafer surface that corresponds to each pixel in the output image from the DIIS. Magnifier 360 is typically operated in conjunction with telescopes inillumination module 224, so that size of the illuminated area is roughly equal to the area imaged by the DIIS. - Each
DIIS 230 comprises animage intensifier 362, whose photocathode is aligned at the image plane of the focusinglens 358 and magnifier 360. Any suitable type of image intensifier tube of any generation/focusing approach(es) may be used for this purpose. For the sake of further illustration to the reader, non-limiting examples include first and second generation image intensifiers such as the C6654 image intensifier produced by Hamamatsu Photonics K.K. (Shizuoka-ken, Japan) or first generation magnetically focused image intensifiers produced by Photek Ltd (East Sussex, UK). To provide optimal imaging in the demanding environment ofsystem 220,intensifier 362 preferably has high bandwidth and high resolution, and is preferably capable of gated operation, with high current and low phosphor memory, at the repetition rate oflaser head 50—typically up to about 1000 pulses per sec. In one embodiment, the useful diameter ofintensifier 362 is preferably at least 18 mm. In another embodiment, a larger diameter ofintensifier 362, in the range of 25-40 mm, is used. - Although as mentioned above, focusing in
intensifier 362 may be achieved by any approach (proximity, electrostatic, magnetic), in one embodiment,intensifier 362 is magnetically focused and results in superior optical performance and/or the possibility of enhancing the lifetime, as described above. - The output of
image intensifier 362 is focused byoptics 364 onto animage sensor 366. Theoptics 364 comprises, two fiber optic plates with a non-binding filling in the gap between the two plates as illustrated and described above with reference toFIGS. 1A and 1B .Image sensor 366 comprises a two-dimensional matrix of detector elements, such as a CCD or CMOS array, as is known in the art. For example, the image sensor may comprise a CMOS digital image sensor, such as model MI-MV13, made by Micron Technology Inc. (Boise, Id.). This sensor has 1280×1024 pixels, with 12 μm vertical and horizontal pitch, and a frame rate up to 500 frames per second for full frames. A detachable attaching medium is used to attachimage intensifier 362 toimage sensor 366 inDIIS 230, as illustrated and described above with reference toFIGS. 1A and 1A . - The use of
image intensifiers 362 increases the sensitivity substantially compared to usingimage sensors 366 alone without intensification.Image intensifiers 362 intensifiers may be gated, in synchronization with the light pulses fromillumination module 224, in order to increase the sensitivity of the DIIS and reduce their noise levels still further. Typically, the photocathodes ofintensifiers 362 are chosen to have high quantum efficiency at the wavelengths emitted by theillumination module 224, while the phosphors of theintensifiers 362 may be chosen to emit light in a different wavelength range in whichimage sensors 366 have high responsivity. Thus, theimage intensifiers 362, in addition to amplifying the incident scattered light, are also useful in downconverting the ultraviolet (UV) and blue light that is scattered fromwafer 222 to the green or red range, to which the silicon image sensors are more responsive. In addition,intensifiers 362 act as low-pass spatial filters, and may thus help to smooth high-frequency structures in the scattered light that might otherwise cause aliasing in the images output bysensors 366. -
Intensifiers 362 preferably have high resolution, as dictated by the resolution ofsensors 366. For example, to take full advantage of the resolution of the above-mentioned MV13 sensor,intensifier 362 should be designed to provide 1640 distinct pixels along the image diagonal. This resolution criterion may also be expressed in terms of the modulation transfer function (MTF) of the intensifier, giving for example MTF=30% for a test image with 33 line pairs/mm or 30%-40% at 40 line pairs/mm depending on the embodiment ofintensifiers 362. Bright points in the image captured byDIIS 230 can result in formation of a bright halo, generally due to reflections inside the image intensifier tube, which may compromise the resolution of the image.Intensifiers 362 are preferably designed to suppress such reflections so that the halo diameter is no more than 0.2 mm in any case. Furthermore, in order to exploit the full range of sensitivity ofsensor 366,intensifier 362 should exhibit linear behavior up to high maximum output brightness (MOB), typically on the order of 600 μW/cm2. - For brevity of description, other details relating to
system 220 as provided in U.S. published application number 20050219518 are hereby incorporated by reference rather than being replicated here. - For ease of understanding, the description above described a single
fiber optic plate 22 coupled to a photo-emitting output area of image intensifier tube 16 (or 362) and a singlefiber optic plate 32 coupled to a photosensitive input area of image sensor 34 (or 366) with a gap between the two plates filled with anon-binding filling 40. However, it should be evident to the reader that in some embodiments singlefiber optic plate 22 may be replaced with a plurality offiber optic plates 22 and/or singlefiber optic plate 32 may be replaced with a plurality offiber optic plates 32. In addition, or instead there may be fiber optic plates in between image intensifier tube 16 (or 362) and image sensor 34 (or 366) which are not clearly associated with either image intensifier 16 (362) or image sensor 34 (366). Therefore in order to understand the possible embodiments, the reader should recognize that there are at least two fiber optic plates between the photo-emitting output area of image intensifier tubes 16 (362) and the photosensitive input area of image intensifier 34 (366). (For ease of explanation, each fiber optic plate is designated 22/32 because the association or non-association of each plate with image intensifier tube 16 (362) or image sensor 34 (366) may vary with the embodiment). Depending on whether a particularfiber optic plate 22/32 has a neighboringfiber optic plate 22/32 on one side or both sides, thatfiber optic plate 22/32 can be considered to belong to one or two pairs of adjacent fiber optic plates, respectively. The gap between one pair of adjacentfiber optic plates 22/32 is filled with non-binding filling 40, but the selection of which pair ofadjacent plates 22/32 out of all possible pairs ofadjacent plates 22/32 has the gap filled with non-binding filling 40 may vary depending on the embodiment. Also depending on the embodiment, if there are other pairs of adjacentfiber optic plates 22/32, the gap(s) between all other pair(s) of adjacentfiber optic plates 22/32 may be filled with non-binding filling 40, the gap(s) between all other pair(s) of adjacentfiber optic plates 22/32 may be filled with a known in the art adhesive, or some of the gap(s) between the other pair(s) of adjacentfiber optic plates 22/32 may be filled with non-binding filling 40 whereas the gap(s) between other(s) of the other pair(s) of adjacentfiber optic plates 22/32 may be filled with a known in the art adhesive. The reader will recognize that as long as the gap between at least one pair of adjacentfiber optic plates 22/32 is filled with non-binding filling 40, those pair(s) of adjacentfiber optic plates 22/32 may be separated from one another (and therefore image intensifier tube 16 (362) and image sensor 34 (366) may be separated from one another) without substantially damaging the DIIS 10 (for example without substantially damaging any of image sensor 34 (366), image intensifier 16 (362) orfiber optic plates 22/32). - The methods and systems described above, apply to embodiments with more than two
fiber optic plates 22/32 between the photo-emitting output area of image intensifier tubes 16 (362) and the photosensitive input area of image intensifier 34 (366), mutatis mutandis. An example is now provided which uses more than twofiber optic plates 22/32. The number of plates, types of bindings between the plates, and other assumptions of the example are provided solely for further illustration to the reader and should therefore not be construed as limiting. It is assumed that a first fiber optic plate is coupled to image intensifier 16 (362) and a second fiber optic plate is attached with an adhesive to the first fiber optic plate. It is further assumed that a third fiber optic plate is coupled to image sensor 34 (366) and a fourth fiber optic plate is aligned between third fiber optic plate and second fiber optic plate. It is further assumed that a non-binding filling 40 fills the gap between the pair of third fiber optic plate and fourth fiber optic plate and a non-binding filling 40 (not necessarily the same filling) fills the gap between the pair of second fiber optic plate and fourth fiber optic plate. In this example, when detachably attaching image sensor 34 (366 to image intensifier 16 (362) using a detachable attaching medium as described above, it is assumed that at least the pair of third fiber optic plate and fourth optic plate are pushed close together and the pair of second fiber optic plate and fourth fiber optic plate are pushed close together. In one embodiment of the example, the detachable attaching medium is assumed to include an elastic material which at least allows the pair of third and fourth fiber optic plates to be pushed close together and the pair of second and fourth fiber optic plates to be pushed close together without substantially damaging any of the fiber optic plates (for example first, second, third and fourth fiber optic plates), image sensor 34 (366) and/or image intensifier 16 (362). In this example if detachment of image sensor 34 (366) from image intensifier 16 (362) is later desired as described above, then in some embodiments the detachment process may include inter-alia the separation of second and fourth fiber optic from one another and/or the separation of third and fourth fiber optic plates from one another. - While the invention has been shown and described with respect to particular embodiments, it is not thus limited. Numerous modifications, changes and improvements within the scope of the invention will now occur to the reader.
Claims (12)
1. An apparatus for inspection of a sample, comprising:
a radiation source, which is adapted to direct optical radiation onto an area of a surface of the sample;
at least one image intensifier, each of which is detachably coupled to an image sensor, so as to receive the radiation from the area over a certain angular range, and to provide intensified radiation to the image sensor; and
at least one image sensor, each of which is configured to receive radiation from at least one image intensifier, so as to form at least one respective image of the area.
2. The apparatus of claim 1 , further comprising: an image processor, which is adapted to process at least one of the respective images so as to detect a defect on the surface.
3. The apparatus of claim 1 , further comprising at least two fiber optic plates for each image intensifier, wherein said image intensifier is further detachably coupled to one of the image sensors using said at least two fiber optic plates, and wherein non-binding filling fills at least one gap which is between at least one pair of adjacent fiber optic plates among said at least two fiber optic plates.
4. The apparatus of claim 3 , wherein said non-binding filling is an oil or gel with an index of refraction that is closer to an index of refraction of said fiber optic plates than an index of refraction of air is to said index of refraction of said fiber optic plates.
5. The apparatus of claim 3 , further comprising: a detachable attaching medium detachably coupling each said image intensifier to one of the image sensors, wherein said medium includes an elastic material configured to at least allow said at least one pair of adjacent fiber optic plates to be pushed close together without substantially damaging any of said image intensifier tube, image sensor, and said fiber optic plates.
6. The apparatus of claim 1 , further comprising: a detachable attaching medium detachably coupling each said image intensifier to one of the image sensors.
7. The apparatus of claim 6 , wherein said detachable attaching medium includes at least one screw configured when screwed in to prevent separation of each said image intensifier tube from said one image sensor.
8. The apparatus of claim 1 , wherein at least one of said image intensifiers is magnetically coupled.
9. A method of inspecting a sample, comprising:
a. providing at least one image intensifier tube detachably coupled to an image sensor with non-binding filling;
b. directing optical radiation onto an area of a surface of a sample to be inspected;
c. receiving and intensifying the radiation scattered from the area using said at least one provided detachably coupled image intensifier tube and image sensor, so as to form a respective images of the area, each of said provided detachably coupled image intensifier tube and image sensor being configured to receive the radiation that is scattered to into a different, respective angular range; and
d. processing at least one of the respective images so as to detect a defect on the surface.
10. The method of claim 9 , wherein said non-binding filling fills at least one gap which is between at least one pair of adjacent fiber optic plates among at least two fiber optic plates aligned between said image intensifier tube and said image sensor.
11. A method of inspecting a sample comprising:
a. providing an image intensifier tube detachably coupled to an image sensor;
b. separating said image intensifier tube from said image sensor;
c. coupling at least one of said separated image intensifier tube and image sensor in a combination of image intensifier tube and image sensor;
d. directing optical radiation onto an area of a surface of a sample to be inspected;
e. receiving the radiation scattered from the area using said combination coupled in (c) so as to form a respective image of the area; and
f. processing said image so as to detect a defect on the surface.
12. The method of claim 11 , wherein said coupling in (c) includes detachably coupling the same or different image intensifier tube to said separated image sensor using at least two fiber optic plates and a non-binding filling which fills at least one gap which is between at least one pair of adjacent fiber optic plates among said at least two fiber optic plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/929,216 US20080054166A1 (en) | 2002-09-30 | 2007-10-30 | Detachably coupled image intensifier and image sensor |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41508202P | 2002-09-30 | 2002-09-30 | |
| PCT/US2003/028062 WO2004031754A1 (en) | 2002-09-30 | 2003-09-08 | Dark field inspection system |
| US51109205A | 2005-04-26 | 2005-04-26 | |
| US51666806A | 2006-09-07 | 2006-09-07 | |
| US11/929,216 US20080054166A1 (en) | 2002-09-30 | 2007-10-30 | Detachably coupled image intensifier and image sensor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US51666806A Division | 2002-09-30 | 2006-09-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20080054166A1 true US20080054166A1 (en) | 2008-03-06 |
Family
ID=32069808
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/511,092 Expired - Lifetime US7339661B2 (en) | 2002-09-30 | 2003-09-08 | Dark field inspection system |
| US11/394,218 Expired - Lifetime US7630069B2 (en) | 2002-09-30 | 2006-01-23 | Illumination system for optical inspection |
| US11/929,216 Abandoned US20080054166A1 (en) | 2002-09-30 | 2007-10-30 | Detachably coupled image intensifier and image sensor |
| US12/626,592 Expired - Lifetime US7924419B2 (en) | 2002-09-30 | 2009-11-25 | Illumination system for optical inspection |
| US13/069,332 Expired - Fee Related US8134699B2 (en) | 2002-09-30 | 2011-03-22 | Illumination system for optical inspection |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/511,092 Expired - Lifetime US7339661B2 (en) | 2002-09-30 | 2003-09-08 | Dark field inspection system |
| US11/394,218 Expired - Lifetime US7630069B2 (en) | 2002-09-30 | 2006-01-23 | Illumination system for optical inspection |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/626,592 Expired - Lifetime US7924419B2 (en) | 2002-09-30 | 2009-11-25 | Illumination system for optical inspection |
| US13/069,332 Expired - Fee Related US8134699B2 (en) | 2002-09-30 | 2011-03-22 | Illumination system for optical inspection |
Country Status (7)
| Country | Link |
|---|---|
| US (5) | US7339661B2 (en) |
| EP (3) | EP1546691A1 (en) |
| JP (4) | JP2006501469A (en) |
| CN (5) | CN1685220B (en) |
| AU (3) | AU2003263109A1 (en) |
| IL (2) | IL167352A (en) |
| WO (3) | WO2004031741A2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080297783A1 (en) * | 2007-04-25 | 2008-12-04 | Yuta Urano | Defect inspection system and method of the same |
| US9110034B1 (en) * | 2013-09-16 | 2015-08-18 | L-3 Communications Corp. | Night vision device test apparatus |
| US20150369753A1 (en) * | 2011-07-12 | 2015-12-24 | Kla-Tencor Corporation | Wafer Inspection |
| WO2018127757A1 (en) * | 2017-01-05 | 2018-07-12 | Illumina, Inc. | Modular optical analytic systems and methods |
| JP2021056146A (en) * | 2019-09-30 | 2021-04-08 | 国立大学法人 奈良先端科学技術大学院大学 | Plant sensing device and real-time plant monitoring system |
Families Citing this family (173)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7584893B2 (en) | 1998-03-24 | 2009-09-08 | Metrologic Instruments, Inc. | Tunnel-type digital imaging system for use within retail shopping environments such as supermarkets |
| US8042740B2 (en) | 2000-11-24 | 2011-10-25 | Metrologic Instruments, Inc. | Method of reading bar code symbols on objects at a point-of-sale station by passing said objects through a complex of stationary coplanar illumination and imaging planes projected into a 3D imaging volume |
| CN1685220B (en) * | 2002-09-30 | 2010-04-28 | 应用材料以色列股份有限公司 | dark field detection system |
| US7265900B2 (en) * | 2002-09-30 | 2007-09-04 | Applied Materials, Inc. | Inspection system with oblique viewing angle |
| US7525659B2 (en) | 2003-01-15 | 2009-04-28 | Negevtech Ltd. | System for detection of water defects |
| US7365834B2 (en) * | 2003-06-24 | 2008-04-29 | Kla-Tencor Technologies Corporation | Optical system for detecting anomalies and/or features of surfaces |
| JP5006040B2 (en) * | 2003-09-04 | 2012-08-22 | ケーエルエー−テンカー コーポレイション | Method and system for inspection of specimens using different inspection parameters |
| US7558999B2 (en) * | 2004-05-21 | 2009-07-07 | International Business Machines Corporation | Learning based logic diagnosis |
| JP2005337851A (en) * | 2004-05-26 | 2005-12-08 | Hitachi High-Technologies Corp | Defect inspection method and apparatus |
| JP2006029881A (en) * | 2004-07-14 | 2006-02-02 | Hitachi High-Technologies Corp | Pattern defect inspection method and apparatus |
| US7471382B2 (en) * | 2004-10-04 | 2008-12-30 | Kla-Tencor Technologies Corporation | Surface inspection system with improved capabilities |
| US7804993B2 (en) | 2005-02-28 | 2010-09-28 | Applied Materials South East Asia Pte. Ltd. | Method and apparatus for detecting defects in wafers including alignment of the wafer images so as to induce the same smear in all images |
| US7813541B2 (en) | 2005-02-28 | 2010-10-12 | Applied Materials South East Asia Pte. Ltd. | Method and apparatus for detecting defects in wafers |
| GB0504913D0 (en) * | 2005-03-10 | 2005-04-13 | Eastman Kodak Co | Method and apparatus for digital processing of images |
| US20070051879A1 (en) * | 2005-09-08 | 2007-03-08 | Tal Kuzniz | Image Intensifier Device and Method |
| US7498557B2 (en) | 2005-09-08 | 2009-03-03 | Applied Materials Israel Ltd. | Cascaded image intensifier |
| JP4996856B2 (en) | 2006-01-23 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and method |
| EP1982160A4 (en) * | 2006-02-09 | 2016-02-17 | Kla Tencor Tech Corp | Methods and systems for determining a characteristic of a wafer |
| US8031931B2 (en) | 2006-04-24 | 2011-10-04 | Applied Materials South East Asia Pte. Ltd. | Printed fourier filtering in optical inspection tools |
| US7659973B2 (en) * | 2006-05-26 | 2010-02-09 | Applied Materials Southeast Asia, Pte Ltd. | Wafer inspection using short-pulsed continuous broadband illumination |
| KR100806795B1 (en) * | 2006-09-12 | 2008-02-27 | 동부일렉트로닉스 주식회사 | Auto focus system |
| JP2008116405A (en) * | 2006-11-07 | 2008-05-22 | Hitachi High-Technologies Corp | Defect inspection method and apparatus |
| US7714997B2 (en) | 2006-11-07 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus for inspecting defects |
| JP5281741B2 (en) * | 2006-12-13 | 2013-09-04 | 株式会社日立ハイテクノロジーズ | Defect inspection equipment |
| JP5713562B2 (en) * | 2007-01-30 | 2015-05-07 | エフ・ポスザツト・ヒユー・エル・エル・シー | Image transfer device |
| US7697128B2 (en) | 2007-03-23 | 2010-04-13 | Asml Netherlands B.V. | Method of imaging radiation from an object on a detection device and an inspection device for inspecting an object |
| JP2009014510A (en) * | 2007-07-04 | 2009-01-22 | Hitachi High-Technologies Corp | Inspection method and inspection apparatus |
| US7570354B1 (en) * | 2007-09-06 | 2009-08-04 | Kla-Tencor Corporation | Image intensification for low light inspection |
| JP5317468B2 (en) * | 2007-12-19 | 2013-10-16 | 株式会社日立ハイテクノロジーズ | Defect inspection equipment |
| US7653097B2 (en) * | 2007-12-31 | 2010-01-26 | Corning Incorporated | Systems and methods for polarization modulation of an optical signal |
| US7738092B1 (en) | 2008-01-08 | 2010-06-15 | Kla-Tencor Corporation | System and method for reducing speckle noise in die-to-die inspection systems |
| US20110175997A1 (en) * | 2008-01-23 | 2011-07-21 | Cyberoptics Corporation | High speed optical inspection system with multiple illumination imagery |
| US7970028B2 (en) * | 2008-01-30 | 2011-06-28 | Corning Incorporated | System and methods for speckle reduction |
| US8285025B2 (en) * | 2008-03-25 | 2012-10-09 | Electro Scientific Industries, Inc. | Method and apparatus for detecting defects using structured light |
| US8494802B2 (en) * | 2008-06-19 | 2013-07-23 | Kla-Tencor Corp. | Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer |
| US7843558B2 (en) * | 2008-06-25 | 2010-11-30 | Applied Materials South East Asia Pte. Ltd. | Optical inspection tools featuring light shaping diffusers |
| JP5878373B2 (en) * | 2008-12-01 | 2016-03-08 | リアルディー インコーポレイテッドRealD Inc. | Stereoscopic projection system using spatial multiplexing on intermediate image plane |
| DE102009000528B4 (en) * | 2009-01-30 | 2011-04-07 | Nanophotonics Ag | Inspection device and method for the optical examination of object surfaces, in particular of wafer surfaces |
| KR101038206B1 (en) * | 2009-02-09 | 2011-05-31 | 한국과학기술원 | Variable field optics using telecentric scanner and two wedge prisms |
| DE102009044151B4 (en) * | 2009-05-19 | 2012-03-29 | Kla-Tencor Mie Gmbh | Device for optical wafer inspection |
| JP5331586B2 (en) | 2009-06-18 | 2013-10-30 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and inspection method |
| DE102010027647A1 (en) * | 2009-07-17 | 2011-01-20 | Continental Engineering Services Gmbh | Laser-based method for friction coefficient classification in motor vehicles |
| WO2011011291A1 (en) | 2009-07-22 | 2011-01-27 | Kla-Tencor Corporation | Dark field inspection system with ring illumination |
| US9068952B2 (en) * | 2009-09-02 | 2015-06-30 | Kla-Tencor Corporation | Method and apparatus for producing and measuring dynamically focussed, steered, and shaped oblique laser illumination for spinning wafer inspection system |
| US8681211B2 (en) * | 2009-09-22 | 2014-03-25 | Cyberoptics Corporation | High speed optical inspection system with adaptive focusing |
| US8894259B2 (en) * | 2009-09-22 | 2014-11-25 | Cyberoptics Corporation | Dark field illuminator with large working area |
| US8670031B2 (en) * | 2009-09-22 | 2014-03-11 | Cyberoptics Corporation | High speed optical inspection system with camera array and compact, integrated illuminator |
| US8872912B2 (en) * | 2009-09-22 | 2014-10-28 | Cyberoptics Corporation | High speed distributed optical sensor inspection system |
| US8388204B2 (en) * | 2009-09-22 | 2013-03-05 | Cyberoptics Corporation | High speed, high resolution, three dimensional solar cell inspection system |
| JP5417268B2 (en) * | 2010-06-28 | 2014-02-12 | 富士フイルム株式会社 | Endoscope system |
| US9406115B2 (en) | 2010-07-03 | 2016-08-02 | Rudolph Technologies, Inc. | Scratch detection method and apparatus |
| EP3650162B1 (en) | 2010-09-21 | 2021-10-27 | Technical Institute of Physics and Chemistry, Chinese Academy of Sciences | Laser micro/nano fabricating system and method of processing a metal ion solution |
| US8358417B2 (en) * | 2010-10-21 | 2013-01-22 | Spectrasensors, Inc. | Spectrometer with validation cell |
| US8573785B2 (en) | 2010-11-23 | 2013-11-05 | Corning Incorporated | Wavelength-switched optical systems |
| TWI440114B (en) * | 2010-11-30 | 2014-06-01 | King Yuan Electronics Co Ltd | Wafer inspection system |
| CN102486521B (en) * | 2010-12-02 | 2014-04-02 | 京元电子股份有限公司 | Wafer detection system |
| US20120307349A1 (en) * | 2010-12-07 | 2012-12-06 | Laser Light Engines | Speckle Reduction Using Multiple Starting Wavelengths |
| JP2012127682A (en) | 2010-12-13 | 2012-07-05 | Hitachi High-Technologies Corp | Defect inspection method and device therefor |
| SG10201510329VA (en) | 2010-12-16 | 2016-01-28 | Kla Tencor Corp | Wafer inspection |
| US9409255B1 (en) | 2011-01-04 | 2016-08-09 | Nlight, Inc. | High power laser imaging systems |
| US10095016B2 (en) | 2011-01-04 | 2018-10-09 | Nlight, Inc. | High power laser system |
| US9429742B1 (en) | 2011-01-04 | 2016-08-30 | Nlight, Inc. | High power laser imaging systems |
| JP5847841B2 (en) * | 2011-01-06 | 2016-01-27 | アプライド マテリアルズ イスラエル リミテッド | Method and system for coherence reduction |
| JP2012185149A (en) * | 2011-02-17 | 2012-09-27 | Ricoh Co Ltd | Defect inspection device and defect inspection processing method |
| CN102122081B (en) * | 2011-03-27 | 2013-03-20 | 山东大学 | Dodging shaping and facula-dispersing device for laser beam |
| WO2012138344A1 (en) * | 2011-04-07 | 2012-10-11 | Applied Materials Israel, Ltd. | Inspection method and an inspection system exhibiting speckle reduction characteristics |
| GB2494733A (en) * | 2011-09-14 | 2013-03-20 | Malvern Instr Ltd | Measuring particle size distribution by light scattering |
| US9720244B1 (en) | 2011-09-30 | 2017-08-01 | Nlight, Inc. | Intensity distribution management system and method in pixel imaging |
| US9402036B2 (en) * | 2011-10-17 | 2016-07-26 | Rudolph Technologies, Inc. | Scanning operation with concurrent focus and inspection |
| US9046697B2 (en) | 2012-01-02 | 2015-06-02 | Jgm Associates, Inc. | Low-speckle light sources and displays employing multimode optical fiber |
| JP5865738B2 (en) | 2012-03-13 | 2016-02-17 | 株式会社日立ハイテクノロジーズ | Defect inspection method and apparatus |
| CN104136961B (en) * | 2012-03-27 | 2017-06-20 | 恩耐有限公司 | High power laser system |
| WO2013152509A1 (en) * | 2012-04-14 | 2013-10-17 | 中国科学技术大学 | Method for implementing super-resolution imaging of microscope system |
| CN103377746B (en) * | 2012-04-14 | 2015-12-02 | 中国科学技术大学 | Method for realizing super-resolution imaging of microscope system |
| US8772731B2 (en) * | 2012-04-15 | 2014-07-08 | Kla-Tencor Corporation | Apparatus and method for synchronizing sample stage motion with a time delay integration charge-couple device in a semiconductor inspection tool |
| EP2850595B1 (en) * | 2012-05-14 | 2016-04-06 | Koninklijke Philips N.V. | Dark field computed tomography imaging |
| US20130313440A1 (en) * | 2012-05-22 | 2013-11-28 | Kla-Tencor Corporation | Solid-State Laser And Inspection System Using 193nm Laser |
| US8896827B2 (en) * | 2012-06-26 | 2014-11-25 | Kla-Tencor Corporation | Diode laser based broad band light sources for wafer inspection tools |
| CN102854196B (en) * | 2012-09-24 | 2014-06-25 | 江苏物联网研究发展中心 | Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects |
| CN103728314B (en) * | 2012-10-16 | 2017-01-04 | 希捷科技有限公司 | The method distinguishing grown surface feature and foreign surface feature |
| US9377394B2 (en) | 2012-10-16 | 2016-06-28 | Seagate Technology Llc | Distinguishing foreign surface features from native surface features |
| US8860937B1 (en) * | 2012-10-24 | 2014-10-14 | Kla-Tencor Corp. | Metrology systems and methods for high aspect ratio and large lateral dimension structures |
| TWI489090B (en) | 2012-10-31 | 2015-06-21 | Pixart Imaging Inc | Detection system |
| CN103808305B (en) * | 2012-11-07 | 2017-11-07 | 原相科技股份有限公司 | Detection system |
| US8912495B2 (en) | 2012-11-21 | 2014-12-16 | Kla-Tencor Corp. | Multi-spectral defect inspection for 3D wafers |
| US9310248B2 (en) | 2013-03-14 | 2016-04-12 | Nlight, Inc. | Active monitoring of multi-laser systems |
| US9214786B2 (en) | 2013-04-09 | 2015-12-15 | Nlight Photonics Corporation | Diode laser packages with flared laser oscillator waveguides |
| US9166369B2 (en) | 2013-04-09 | 2015-10-20 | Nlight Photonics Corporation | Flared laser oscillator waveguide |
| WO2014188457A1 (en) * | 2013-05-23 | 2014-11-27 | Centro Sviluppo Materiali S.P.A. | Method for the surface inspection of long products and apparatus suitable for carrying out such a method |
| US9274064B2 (en) * | 2013-05-30 | 2016-03-01 | Seagate Technology Llc | Surface feature manager |
| US9513215B2 (en) | 2013-05-30 | 2016-12-06 | Seagate Technology Llc | Surface features by azimuthal angle |
| US9255887B2 (en) | 2013-06-19 | 2016-02-09 | Kla-Tencor Corporation | 2D programmable aperture mechanism |
| US9852519B2 (en) | 2013-06-25 | 2017-12-26 | Pixart Imaging Inc. | Detection system |
| US9747670B2 (en) | 2013-06-26 | 2017-08-29 | Kla-Tencor Corporation | Method and system for improving wafer surface inspection sensitivity |
| JP6069133B2 (en) * | 2013-08-30 | 2017-02-01 | 株式会社日立ハイテクノロジーズ | Defect inspection apparatus and defect inspection method |
| KR102099722B1 (en) | 2014-02-05 | 2020-05-18 | 엔라이트 인크. | Single-emitter line beam system |
| US9435964B2 (en) | 2014-02-26 | 2016-09-06 | TeraDiode, Inc. | Systems and methods for laser systems with variable beam parameter product |
| US10914902B2 (en) | 2014-02-26 | 2021-02-09 | TeraDiode, Inc. | Methods for altering properties of a radiation beam |
| US9506873B2 (en) | 2014-04-15 | 2016-11-29 | Kla-Tencor Corp. | Pattern suppression in logic for wafer inspection |
| WO2015200271A1 (en) * | 2014-06-25 | 2015-12-30 | TeraDiode, Inc. | Systems and methods for laser systems with variable beam parameter product |
| JP6408817B2 (en) * | 2014-07-22 | 2018-10-17 | オリンパス株式会社 | Image processing apparatus, image processing method, image processing program, and imaging system |
| KR20160013695A (en) | 2014-07-28 | 2016-02-05 | 삼성전자주식회사 | Apparatus and method for inspection of substrate defect |
| BR112017002707B1 (en) * | 2014-08-13 | 2022-08-09 | Ipg Photonics Corporation | MULTI-BEAM OUTPUT FIBER LASER SYSTEM AND METHOD OF PROVIDING A DYNAMICALLY CHANGEABLE MULTI-BEAM LASER BEAM |
| US9766186B2 (en) * | 2014-08-27 | 2017-09-19 | Kla-Tencor Corp. | Array mode repeater detection |
| US10186836B2 (en) | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
| SG10202110739PA (en) | 2014-12-05 | 2021-11-29 | Kla Tencor Corp | Apparatus, method and computer program product for defect detection in work pieces |
| EP3238135B1 (en) * | 2014-12-22 | 2020-02-05 | California Institute Of Technology | Epi-illumination fourier ptychographic imaging for thick samples |
| JP6528308B2 (en) * | 2015-02-05 | 2019-06-12 | 国立大学法人神戸大学 | Shape evaluation method and shape evaluation apparatus |
| CN104967759B (en) * | 2015-02-13 | 2016-05-04 | 华中科技大学 | A kind of scanning imaging system for low light level signal |
| US9841512B2 (en) * | 2015-05-14 | 2017-12-12 | Kla-Tencor Corporation | System and method for reducing radiation-induced false counts in an inspection system |
| US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
| EP3144887A1 (en) * | 2015-09-17 | 2017-03-22 | Thomson Licensing | A method and an apparatus for generating data representative of a pixel beam |
| EP3144888A1 (en) * | 2015-09-17 | 2017-03-22 | Thomson Licensing | An apparatus and a method for generating data representing a pixel beam |
| JP6723633B2 (en) * | 2015-12-10 | 2020-07-15 | 株式会社ディスコ | Inspection equipment |
| WO2017149689A1 (en) * | 2016-03-02 | 2017-09-08 | 株式会社日立ハイテクノロジーズ | Defect inspection device, pattern chip, and defect inspection method |
| JP2017198612A (en) * | 2016-04-28 | 2017-11-02 | キヤノン株式会社 | Inspection device, inspection system, and method for manufacturing article |
| EP3296723A1 (en) | 2016-09-14 | 2018-03-21 | ASML Netherlands B.V. | Illumination source for an inspection apparatus, inspection apparatus and inspection method |
| CN110178045B (en) * | 2016-11-17 | 2023-05-30 | 特里纳米克斯股份有限公司 | Detector for optically detecting at least one object |
| CN106645197B (en) * | 2016-12-29 | 2024-01-30 | 中国工程物理研究院激光聚变研究中心 | Online detection system for detecting particles on surface of precision optical element and application method |
| CN106707492B (en) * | 2017-01-13 | 2019-07-26 | 清华大学 | Collection terminal frequency domain based on spatial light modulator pieces microscopic system together |
| US10481101B2 (en) * | 2017-01-23 | 2019-11-19 | Applied Materials Israel Ltd. | Asymmetrical magnification inspection system and illumination module |
| NL2018852B1 (en) | 2017-05-05 | 2018-11-14 | Illumina Inc | Optical distortion correction for imaged samples |
| CN107121161B (en) * | 2017-04-18 | 2019-06-04 | 北京佳百瑞科技有限责任公司 | More imaging unit vision detection systems based on controllable polarization |
| CN106990119A (en) * | 2017-04-27 | 2017-07-28 | 中科慧远视觉技术(洛阳)有限公司 | The vision detection system and detection method of a kind of white glass surface defect of automatic detection |
| JP6876576B2 (en) * | 2017-08-17 | 2021-05-26 | 日本電子株式会社 | 3D image construction method |
| EP3625602A4 (en) | 2017-09-29 | 2021-02-24 | Leica Biosystems Imaging, Inc. | REAL-TIME AUTOMATIC FOCUS ALGORITHM |
| CA3075288C (en) | 2017-09-29 | 2022-08-30 | Leica Biosystems Imaging, Inc. | Real-time autofocus scanning |
| EP3701245A4 (en) * | 2017-10-26 | 2021-08-11 | Particle Measuring Systems, Inc. | SYSTEM AND METHOD FOR PARTICLE MEASUREMENT |
| CN107727655B (en) * | 2017-11-24 | 2024-06-18 | 苏州精濑光电有限公司 | Quick optical correction device |
| US11087451B2 (en) * | 2017-12-19 | 2021-08-10 | Texas Instruments Incorporated | Generating multi-focal defect maps using optical tools |
| JP6818702B2 (en) * | 2018-01-15 | 2021-01-20 | 株式会社東芝 | Optical inspection equipment and optical inspection method |
| US20190355110A1 (en) * | 2018-05-15 | 2019-11-21 | Camtek Ltd. | Cross talk reduction |
| US20190369307A1 (en) * | 2018-05-30 | 2019-12-05 | Key Technology, Inc. | Electromagnetic Radiation Detector Assembly |
| EP3581091A1 (en) * | 2018-06-12 | 2019-12-18 | Koninklijke Philips N.V. | System and method for determining at least one vital sign of a subject |
| US10408767B1 (en) * | 2018-06-13 | 2019-09-10 | Hatch Ltd. | System and method for detecting imperfections in a reflective surface |
| US10877382B2 (en) * | 2018-08-14 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for handling mask and lithography apparatus |
| CN110849900A (en) * | 2018-08-21 | 2020-02-28 | 深圳中科飞测科技有限公司 | Wafer defect detection system and method |
| CN109239078A (en) * | 2018-09-12 | 2019-01-18 | 苏州工业园区纳米产业技术研究院有限公司微纳制造分公司 | A kind of wafer defect detection device |
| JP7158224B2 (en) * | 2018-09-26 | 2022-10-21 | 浜松ホトニクス株式会社 | Semiconductor device inspection method and semiconductor device inspection apparatus |
| WO2020074250A1 (en) * | 2018-10-12 | 2020-04-16 | Asml Netherlands B.V. | Detection system for an alignment sensor |
| CN111198192B (en) * | 2018-11-20 | 2022-02-15 | 深圳中科飞测科技股份有限公司 | Detection device and detection method |
| TWI724370B (en) * | 2019-02-01 | 2021-04-11 | 由田新技股份有限公司 | An automatic optical inspection system, and method for measuring a hole structure |
| CN111638226B (en) * | 2019-02-14 | 2021-08-31 | 深圳中科飞测科技股份有限公司 | Detection method, image processor and detection system |
| CN109916902A (en) * | 2019-03-12 | 2019-06-21 | 中国工程物理研究院激光聚变研究中心 | Imaging device and imaging method |
| CN109932826B (en) * | 2019-04-29 | 2023-10-31 | 中国工程物理研究院激光聚变研究中心 | A spliced strip laser device for defect detection of optical components |
| US11162897B2 (en) * | 2019-05-15 | 2021-11-02 | Onto Innovation Inc. | Optical metrology device using numerical aperture reduction |
| CN110208284B (en) * | 2019-05-27 | 2021-09-17 | 武汉中导光电设备有限公司 | Method and system for multi-channel defect merging analysis |
| JP2020204579A (en) * | 2019-06-18 | 2020-12-24 | 住友電工デバイス・イノベーション株式会社 | Wafer surface inspection method, surface inspection device, and method for manufacturing electronic component |
| DE102019209213A1 (en) * | 2019-06-26 | 2020-12-31 | Q.ant GmbH | Sensor arrangement for characterization of particles |
| CN110426397B (en) * | 2019-08-14 | 2022-03-25 | 深圳市麓邦技术有限公司 | Optical detection system, device and method |
| CN112581512A (en) * | 2019-09-27 | 2021-03-30 | 鲁班嫡系机器人(深圳)有限公司 | Image matching, 3D imaging and posture recognition method, device and system |
| CN110779694B (en) * | 2019-11-11 | 2021-02-19 | 四川大学 | Method for measuring refractive index by irradiating double prism facets |
| WO2021096865A2 (en) * | 2019-11-12 | 2021-05-20 | Applied Materials, Inc. | Systems and methods for controlling non-uniformity |
| US11343435B2 (en) | 2019-12-26 | 2022-05-24 | Waymo Llc | Microlensing for real-time sensing of stray light |
| EP4176228B1 (en) | 2020-07-03 | 2025-08-13 | Scuola universitaria professionale della Svizzera italiana (SUPSI) | 3d image acquisition system for optical inspection and method for optical inspection of objects, in particular electronic assemblies, electronic boards and the like |
| CN112180579B (en) * | 2020-09-11 | 2021-11-16 | 中国科学院西安光学精密机械研究所 | Microscopic imaging assembly, device, system and imaging method using array objective lens |
| TWI779357B (en) * | 2020-09-23 | 2022-10-01 | 南亞科技股份有限公司 | Method of detecting a surface defect on an object and system thereof |
| US11899375B2 (en) * | 2020-11-20 | 2024-02-13 | Kla Corporation | Massive overlay metrology sampling with multiple measurement columns |
| CN112630128B (en) * | 2020-12-21 | 2023-11-10 | 深圳中科飞测科技股份有限公司 | Illumination system and scanning device |
| KR102470065B1 (en) * | 2020-12-22 | 2022-11-23 | (주) 엘티아이에스 | Particle measuring device |
| CN114666455A (en) * | 2020-12-23 | 2022-06-24 | Oppo广东移动通信有限公司 | Shooting control method and device, storage medium and electronic device |
| CN112908126B (en) * | 2021-01-21 | 2022-07-08 | 潍坊学院 | Lens imaging experimental device with focusing state digital display |
| CN115248531A (en) * | 2021-04-26 | 2022-10-28 | 上海微电子装备(集团)股份有限公司 | Particle size detection device and detection method thereof, and lithography machine |
| CN113418932B (en) * | 2021-06-30 | 2023-08-04 | 天津大学 | Device and method for non-destructive testing of semiconductor wafers |
| JP7566703B2 (en) * | 2021-08-24 | 2024-10-15 | 株式会社東芝 | OPTICAL INSPECTION METHOD, OPTICAL INSPECTION PROGRAM, AND OPTICAL INSPECTION APPARATUS |
| JP2023038765A (en) * | 2021-09-07 | 2023-03-17 | 株式会社東芝 | Inspection method, inspection device, inspection system, program, and storage medium |
| FR3127296B1 (en) * | 2021-09-17 | 2024-02-02 | Safran Electronics & Defense | Imaging device with modular design and remote infrared sensor |
| CN113768472B (en) * | 2021-11-10 | 2022-03-22 | 华中科技大学 | A three-dimensional image acquisition device and method with fluorescent markers |
| NL1044332B1 (en) * | 2022-05-17 | 2023-11-24 | Felixsonip B V | Method for improved scanning of a photographic emulsion |
| KR20240084706A (en) * | 2022-12-07 | 2024-06-14 | (주)넥스틴 | Dark-field inspection device with real time variable function |
| CN115930850B (en) * | 2023-02-06 | 2023-05-30 | 宜科(天津)电子有限公司 | Data processing system for detecting surface roughness of object |
| CN119986931A (en) * | 2023-11-10 | 2025-05-13 | 致茂电子(苏州)有限公司 | Optimal diffuser position adjustment method for Kohler illumination system |
| US20260009969A1 (en) * | 2024-07-02 | 2026-01-08 | Applied Materials Israel Ltd. | Auto focus using multiple location illumination |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161008A (en) * | 1989-11-06 | 1992-11-03 | Proxitronic Funk Gmbh & Co. Kg | Optoelectronic image sensor for color cameras |
| US5739542A (en) * | 1993-03-25 | 1998-04-14 | Seiko Instruments Inc. | X-ray analyzing |
| US5933473A (en) * | 1996-04-04 | 1999-08-03 | Hitachi, Ltd. | Non-destructive inspection apparatus and inspection system using it |
| US6313465B1 (en) * | 1998-03-25 | 2001-11-06 | Kabushiki Kaisha Toshiba | Radiation discriminative measuring apparatus and radiation discriminative measuring method |
| US6646272B2 (en) * | 1996-07-10 | 2003-11-11 | Packard Instrument Company, Inc. | Fiber optic coupling device for detecting luminescent samples |
| US7015452B2 (en) * | 2001-10-09 | 2006-03-21 | Itt Manufacturing Enterprises, Inc. | Intensified hybrid solid-state sensor |
Family Cites Families (85)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3628080A (en) * | 1969-08-08 | 1971-12-14 | Westinghouse Electric Corp | Fiber optic output faceplate assembly system |
| NL7309383A (en) * | 1973-07-05 | 1975-01-07 | Philips Nv | COUPLING OF TWO OPTICAL WINDOWS. |
| JPS6114009Y2 (en) * | 1980-12-18 | 1986-05-01 | ||
| DE3232885A1 (en) * | 1982-09-04 | 1984-03-08 | Robert Bosch Gmbh, 7000 Stuttgart | METHOD FOR AUTOMATICALLY INSPECTING SURFACES |
| US4619508A (en) * | 1984-04-28 | 1986-10-28 | Nippon Kogaku K. K. | Illumination optical arrangement |
| JPH079368B2 (en) * | 1986-04-07 | 1995-02-01 | 株式会社日立製作所 | Circuit board inspection device |
| JPS62293718A (en) * | 1986-06-13 | 1987-12-21 | Canon Inc | Exposure device |
| EP0286393B1 (en) * | 1987-04-10 | 1992-11-19 | British Aerospace Public Limited Company | Imaging system |
| JP2838797B2 (en) * | 1987-04-13 | 1998-12-16 | 株式会社ニコン | Projection optical device |
| JP2512059B2 (en) * | 1988-02-26 | 1996-07-03 | 株式会社日立製作所 | Foreign object detection method and apparatus |
| JPH0235447A (en) | 1988-07-26 | 1990-02-06 | Fuji Photo Film Co Ltd | Method for forming fixation type optical image forming sheet |
| JP2693791B2 (en) * | 1988-10-25 | 1997-12-24 | 三菱電機株式会社 | Defect inspection equipment |
| JP3204406B2 (en) * | 1991-10-30 | 2001-09-04 | 株式会社ニコン | Surface position detection method and apparatus, semiconductor exposure apparatus, and exposure method using the method |
| US5264912A (en) * | 1992-02-07 | 1993-11-23 | Tencor Instruments | Speckle reduction track filter apparatus for optical inspection of patterned substrates |
| US5228101A (en) | 1992-03-02 | 1993-07-13 | Motorola, Inc. | Electrical to optical links using metalization |
| JP2987007B2 (en) * | 1992-05-28 | 1999-12-06 | 日立電子エンジニアリング株式会社 | Foreign matter detection optical system of color filter |
| US5313479A (en) * | 1992-07-29 | 1994-05-17 | Texas Instruments Incorporated | Speckle-free display system using coherent light |
| CN2138294Y (en) * | 1992-09-19 | 1993-07-14 | 杨锡庚 | Laser instant infrared temperature meter |
| CN1025642C (en) * | 1992-11-02 | 1994-08-10 | 中国大恒公司 | Photoelectric fingerprint reader |
| US5420954A (en) | 1993-05-24 | 1995-05-30 | Photonics Research Incorporated | Parallel optical interconnect |
| US5359447A (en) | 1993-06-25 | 1994-10-25 | Hewlett-Packard Company | Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes |
| JPH07104192A (en) * | 1993-10-07 | 1995-04-21 | Olympus Optical Co Ltd | Tv observation device for microscope |
| JP3271425B2 (en) * | 1994-03-30 | 2002-04-02 | ソニー株式会社 | Foreign matter inspection device and foreign matter inspection method |
| US5526458A (en) * | 1994-05-27 | 1996-06-11 | Eastman Kodak Company | Vision system with fiber optic plate to detilt oblique images |
| US5673144A (en) * | 1994-09-14 | 1997-09-30 | International Business Machines, Corporation | Oblique viewing microscope system |
| DE4434699C2 (en) * | 1994-09-28 | 2001-02-22 | Fraunhofer Ges Forschung | Arrangement for checking transparent or reflective objects |
| JP3744966B2 (en) * | 1994-10-07 | 2006-02-15 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor substrate |
| JPH08152430A (en) * | 1994-11-29 | 1996-06-11 | Seiko Instr Inc | Microscope with alignment function |
| US5633747A (en) * | 1994-12-21 | 1997-05-27 | Tencor Instruments | Variable spot-size scanning apparatus |
| US5500770A (en) * | 1994-12-30 | 1996-03-19 | Amarel Precision Instruments | Macrolens system for emission microscopy |
| US6118525A (en) * | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
| US5903342A (en) * | 1995-04-10 | 1999-05-11 | Hitachi Electronics Engineering, Co., Ltd. | Inspection method and device of wafer surface |
| WO1996039619A1 (en) * | 1995-06-06 | 1996-12-12 | Kla Instruments Corporation | Optical inspection of a specimen using multi-channel responses from the specimen |
| US5729374A (en) * | 1995-07-03 | 1998-03-17 | The Regents Of The University Of California | Speckle averaging system for laser raster-scan image projection |
| JP2820103B2 (en) * | 1996-01-31 | 1998-11-05 | 日本電気株式会社 | Injection-locked laser device |
| FR2744764B1 (en) * | 1996-02-12 | 1998-04-17 | Inst Francais Du Petrole | TWO STROKE MOTOR WITH A MEANS OF CONTROL OF THE MOVEMENT OF THE VALVE |
| JPH09305094A (en) * | 1996-05-10 | 1997-11-28 | Komatsu Ltd | Telecentric optical device |
| AU3376597A (en) * | 1996-06-04 | 1998-01-05 | Tencor Instruments | Optical scanning system for surface inspection |
| JPH10141932A (en) * | 1996-11-07 | 1998-05-29 | Fujitsu Ltd | Pattern inspection method and device |
| US5801824A (en) * | 1996-11-25 | 1998-09-01 | Photon Dynamics, Inc. | Large area defect monitor tool for manufacture of clean surfaces |
| US5774224A (en) * | 1997-01-24 | 1998-06-30 | International Business Machines Corporation | Linear-scanning, oblique-viewing optical apparatus |
| WO1998044330A2 (en) * | 1997-03-31 | 1998-10-08 | Microtherm, Llc | Optical inspection module and method for detecting particles and defects on substrates in integrated process tools |
| JPH10335240A (en) * | 1997-05-30 | 1998-12-18 | Nikon Corp | Surface position detector |
| JPH1164234A (en) * | 1997-08-20 | 1999-03-05 | Advantest Corp | Method and device for detecting foreign matter |
| US6201601B1 (en) * | 1997-09-19 | 2001-03-13 | Kla-Tencor Corporation | Sample inspection system |
| US6956644B2 (en) * | 1997-09-19 | 2005-10-18 | Kla-Tencor Technologies Corporation | Systems and methods for a wafer inspection system using multiple angles and multiple wavelength illumination |
| US6104481A (en) * | 1997-11-11 | 2000-08-15 | Kabushiki Kaisha Topcon | Surface inspection apparatus |
| US6304373B1 (en) * | 1998-03-09 | 2001-10-16 | Lucid, Inc. | Imaging system using multi-mode laser illumination to enhance image quality |
| JPH11223795A (en) * | 1998-02-06 | 1999-08-17 | Sony Corp | Light coherence reduction method and device, illumination method and device, and bundle fiber |
| JP3385994B2 (en) * | 1998-02-27 | 2003-03-10 | 株式会社ニコン | Image detector |
| JPH11326826A (en) * | 1998-05-13 | 1999-11-26 | Sony Corp | Lighting method and lighting device |
| JPH11326653A (en) * | 1998-05-15 | 1999-11-26 | Sony Corp | Light coherence reduction method and device, illumination method and device, and optical fiber bundle |
| US6256093B1 (en) * | 1998-06-25 | 2001-07-03 | Applied Materials, Inc. | On-the-fly automatic defect classification for substrates using signal attributes |
| US6137570A (en) * | 1998-06-30 | 2000-10-24 | Kla-Tencor Corporation | System and method for analyzing topological features on a surface |
| US6987873B1 (en) * | 1998-07-08 | 2006-01-17 | Applied Materials, Inc. | Automatic defect classification with invariant core classes |
| JP4426026B2 (en) * | 1998-08-07 | 2010-03-03 | シスメックス株式会社 | Multi-light source unit and optical system using the same |
| US6122046A (en) * | 1998-10-02 | 2000-09-19 | Applied Materials, Inc. | Dual resolution combined laser spot scanning and area imaging inspection |
| JP4304548B2 (en) * | 1998-12-01 | 2009-07-29 | 株式会社ニコン | Microscope equipment |
| US6621570B1 (en) * | 1999-03-04 | 2003-09-16 | Inspex Incorporated | Method and apparatus for inspecting a patterned semiconductor wafer |
| US6091488A (en) * | 1999-03-22 | 2000-07-18 | Beltronics, Inc. | Method of and apparatus for automatic high-speed optical inspection of semi-conductor structures and the like through fluorescent photoresist inspection |
| JP4258058B2 (en) * | 1999-03-23 | 2009-04-30 | ソニー株式会社 | Inspection apparatus and inspection method for disk-shaped recording medium |
| JP4455771B2 (en) * | 1999-04-12 | 2010-04-21 | ドイッチェ テレコム アーゲー | Method and apparatus for reducing speckle formation on a projection screen |
| US6370219B1 (en) | 1999-04-20 | 2002-04-09 | Lucent Technologies Inc. | Self-modulated, filament-based, solid state laser |
| US6853446B1 (en) | 1999-08-16 | 2005-02-08 | Applied Materials, Inc. | Variable angle illumination wafer inspection system |
| JP2000136910A (en) * | 1999-11-01 | 2000-05-16 | Olympus Optical Co Ltd | Board inspection apparatus |
| US6369888B1 (en) * | 1999-11-17 | 2002-04-09 | Applied Materials, Inc. | Method and apparatus for article inspection including speckle reduction |
| US6956878B1 (en) * | 2000-02-07 | 2005-10-18 | Silicon Light Machines Corporation | Method and apparatus for reducing laser speckle using polarization averaging |
| JP4604300B2 (en) * | 2000-02-09 | 2011-01-05 | 株式会社ニコン | microscope |
| JP2001250760A (en) * | 2000-03-06 | 2001-09-14 | Nikon Corp | Aberration measurement method, mark detection method using the method, and exposure method |
| JP3996728B2 (en) * | 2000-03-08 | 2007-10-24 | 株式会社日立製作所 | Surface inspection apparatus and method |
| WO2001071323A1 (en) * | 2000-03-24 | 2001-09-27 | Olympus Optical Co., Ltd. | Apparatus for detecting defect |
| JP3858571B2 (en) * | 2000-07-27 | 2006-12-13 | 株式会社日立製作所 | Pattern defect inspection method and apparatus |
| US7136159B2 (en) * | 2000-09-12 | 2006-11-14 | Kla-Tencor Technologies Corporation | Excimer laser inspection system |
| US6323984B1 (en) * | 2000-10-11 | 2001-11-27 | Silicon Light Machines | Method and apparatus for reducing laser speckle |
| US6693930B1 (en) * | 2000-12-12 | 2004-02-17 | Kla-Tencor Technologies Corporation | Peak power and speckle contrast reduction for a single laser pulse |
| US6522437B2 (en) * | 2001-02-15 | 2003-02-18 | Harris Corporation | Agile multi-beam free-space optical communication apparatus |
| US6625381B2 (en) * | 2001-02-20 | 2003-09-23 | Eastman Kodak Company | Speckle suppressed laser projection system with partial beam reflection |
| US6445487B1 (en) * | 2001-02-20 | 2002-09-03 | Eastman Kodak Company | Speckle suppressed laser projection system using a multi-wavelength doppler shifted beam |
| JP3271622B2 (en) * | 2001-03-12 | 2002-04-02 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| RU2214058C2 (en) * | 2001-04-25 | 2003-10-10 | Общество с ограниченной ответственностью "Подсолнечник Технологии" | Method for generating light beams for open optical communication systems |
| US6747781B2 (en) * | 2001-06-25 | 2004-06-08 | Silicon Light Machines, Inc. | Method, apparatus, and diffuser for reducing laser speckle |
| US6778267B2 (en) * | 2001-09-24 | 2004-08-17 | Kla-Tencor Technologies Corp. | Systems and methods for forming an image of a specimen at an oblique viewing angle |
| US6895149B1 (en) * | 2002-05-13 | 2005-05-17 | James Jeffery Jacob | Apparatus for beam homogenization and speckle reduction |
| US7116413B2 (en) * | 2002-09-13 | 2006-10-03 | Kla-Tencor Corporation | Inspection system for integrated applications |
| CN1685220B (en) * | 2002-09-30 | 2010-04-28 | 应用材料以色列股份有限公司 | dark field detection system |
-
2003
- 2003-09-08 CN CN03823095XA patent/CN1685220B/en not_active Expired - Fee Related
- 2003-09-08 WO PCT/US2003/028054 patent/WO2004031741A2/en not_active Ceased
- 2003-09-08 US US10/511,092 patent/US7339661B2/en not_active Expired - Lifetime
- 2003-09-08 EP EP03799277A patent/EP1546691A1/en not_active Withdrawn
- 2003-09-08 WO PCT/US2003/028061 patent/WO2004031753A1/en not_active Ceased
- 2003-09-08 EP EP03799276A patent/EP1576355A2/en not_active Withdrawn
- 2003-09-08 CN CNA038230976A patent/CN1771456A/en active Pending
- 2003-09-08 WO PCT/US2003/028062 patent/WO2004031754A1/en not_active Ceased
- 2003-09-08 JP JP2004541515A patent/JP2006501469A/en active Pending
- 2003-09-08 AU AU2003263109A patent/AU2003263109A1/en not_active Abandoned
- 2003-09-08 CN CN201410569577.4A patent/CN104502357B/en not_active Expired - Lifetime
- 2003-09-08 EP EP03799278A patent/EP1546693A1/en not_active Withdrawn
- 2003-09-08 JP JP2004541513A patent/JP4704040B2/en not_active Expired - Fee Related
- 2003-09-08 AU AU2003263108A patent/AU2003263108A1/en not_active Abandoned
- 2003-09-08 JP JP2004541516A patent/JP4546830B2/en not_active Expired - Lifetime
- 2003-09-08 CN CNB038230968A patent/CN100561204C/en not_active Expired - Fee Related
- 2003-09-08 AU AU2003265989A patent/AU2003265989A1/en not_active Abandoned
- 2003-09-08 CN CN201110240143.6A patent/CN102393398B/en not_active Expired - Lifetime
-
2005
- 2005-03-09 IL IL167352A patent/IL167352A/en unknown
- 2005-03-09 IL IL167353A patent/IL167353A/en active IP Right Grant
-
2006
- 2006-01-23 US US11/394,218 patent/US7630069B2/en not_active Expired - Lifetime
-
2007
- 2007-10-30 US US11/929,216 patent/US20080054166A1/en not_active Abandoned
-
2008
- 2008-07-11 JP JP2008181750A patent/JP5702045B2/en not_active Expired - Lifetime
-
2009
- 2009-11-25 US US12/626,592 patent/US7924419B2/en not_active Expired - Lifetime
-
2011
- 2011-03-22 US US13/069,332 patent/US8134699B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161008A (en) * | 1989-11-06 | 1992-11-03 | Proxitronic Funk Gmbh & Co. Kg | Optoelectronic image sensor for color cameras |
| US5739542A (en) * | 1993-03-25 | 1998-04-14 | Seiko Instruments Inc. | X-ray analyzing |
| US5933473A (en) * | 1996-04-04 | 1999-08-03 | Hitachi, Ltd. | Non-destructive inspection apparatus and inspection system using it |
| US6646272B2 (en) * | 1996-07-10 | 2003-11-11 | Packard Instrument Company, Inc. | Fiber optic coupling device for detecting luminescent samples |
| US6313465B1 (en) * | 1998-03-25 | 2001-11-06 | Kabushiki Kaisha Toshiba | Radiation discriminative measuring apparatus and radiation discriminative measuring method |
| US7015452B2 (en) * | 2001-10-09 | 2006-03-21 | Itt Manufacturing Enterprises, Inc. | Intensified hybrid solid-state sensor |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080297783A1 (en) * | 2007-04-25 | 2008-12-04 | Yuta Urano | Defect inspection system and method of the same |
| US8274652B2 (en) * | 2007-04-25 | 2012-09-25 | Hitachi High-Technologies Corporation | Defect inspection system and method of the same |
| US20150369753A1 (en) * | 2011-07-12 | 2015-12-24 | Kla-Tencor Corporation | Wafer Inspection |
| US9915622B2 (en) * | 2011-07-12 | 2018-03-13 | Kla-Tencor Corp. | Wafer inspection |
| US9110034B1 (en) * | 2013-09-16 | 2015-08-18 | L-3 Communications Corp. | Night vision device test apparatus |
| WO2018127757A1 (en) * | 2017-01-05 | 2018-07-12 | Illumina, Inc. | Modular optical analytic systems and methods |
| US10732122B2 (en) | 2017-01-05 | 2020-08-04 | Illumina, Inc. | Modular optical analytic systems and methods |
| US11408828B2 (en) | 2017-01-05 | 2022-08-09 | Illumina, Inc. | Modular optical analytic systems and methods |
| US12044626B2 (en) | 2017-01-05 | 2024-07-23 | Illumina, Inc. | Modular optical analytic systems and methods |
| JP2021056146A (en) * | 2019-09-30 | 2021-04-08 | 国立大学法人 奈良先端科学技術大学院大学 | Plant sensing device and real-time plant monitoring system |
| JP7424607B2 (en) | 2019-09-30 | 2024-01-30 | 国立大学法人 奈良先端科学技術大学院大学 | Plant sensing device and real-time plant monitoring system |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080054166A1 (en) | Detachably coupled image intensifier and image sensor | |
| US10488348B2 (en) | Wafer inspection | |
| US9086389B2 (en) | Sample inspection system detector | |
| US7265900B2 (en) | Inspection system with oblique viewing angle | |
| JP2005521876A (en) | Method and system for inspecting a surface using exposure control | |
| US7924517B2 (en) | Spatial filter, a system and method for collecting light from an object | |
| JP2007115669A (en) | Detachable coupling image intensifier and image sensor | |
| JP2010190776A (en) | Imaging device and surface inspection device | |
| US6730901B1 (en) | Sample imaging | |
| JPH08285947A (en) | Electron detection device and electron microscope equipped with the same | |
| US11181484B1 (en) | Systems and methods for advanced defect ablation protection | |
| US7566873B1 (en) | High-resolution, low-distortion and high-efficiency optical coupling in detection system of electron beam apparatus | |
| JPH01149354A (en) | electronic microscope | |
| JPH10221270A (en) | Foreign matter inspection device | |
| KR20230095253A (en) | Euv photo mask inspection apparatus | |
| US20250060248A1 (en) | Inspecting tool for inspecting micro led array panel | |
| JPS6352427B2 (en) | ||
| JP2001133412A (en) | Surface inspection apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |