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US20080054166A1 - Detachably coupled image intensifier and image sensor - Google Patents

Detachably coupled image intensifier and image sensor Download PDF

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Publication number
US20080054166A1
US20080054166A1 US11/929,216 US92921607A US2008054166A1 US 20080054166 A1 US20080054166 A1 US 20080054166A1 US 92921607 A US92921607 A US 92921607A US 2008054166 A1 US2008054166 A1 US 2008054166A1
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Prior art keywords
image
image sensor
fiber optic
image intensifier
intensifier tube
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Abandoned
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US11/929,216
Inventor
Tal Kuzniz
Avishay Guetta
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Applied Materials Israel Ltd
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Applied Materials Israel Ltd
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Priority to US11/929,216 priority Critical patent/US20080054166A1/en
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Abandoned legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95607Inspecting patterns on the surface of objects using a comparative method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N21/95623Inspecting patterns on the surface of objects using a spatial filtering method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/1765Method using an image detector and processing of image signal
    • G01N2021/177Detector of the video camera type
    • G01N2021/1772Array detector
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4711Multiangle measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4735Solid samples, e.g. paper, glass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • G01N2021/479Speckle
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4792Polarisation of scatter light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8822Dark field detection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8845Multiple wavelengths of illumination or detection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/069Supply of sources
    • G01N2201/0696Pulsed
    • G01N2201/0697Pulsed lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping

Definitions

  • An image intensifier typically includes a vacuum tube with a photocathode unit at one end and a screen unit at the other end.
  • the photocathode unit converts incoming photons to electrons which are accelerated by an electric field (potential difference) in the tube until they hit a screen unit converting them back to photons.
  • a method of separating an image intensifier tube detachably coupled to an image sensor comprising: a) providing an image intensifier tube detachably coupled to an image sensor; and b) separating the image intensifier tube from the image sensor; wherein the separating does not substantially damage the image intensifier tube nor the image sensor.
  • a method of inspecting a sample comprising: a) providing an image intensifier tube detachably coupled to an image sensor; b) separating the image intensifier tube from the image sensor; c) coupling at least one of the separated image intensifier tube and image sensor in a combination of image intensifier tube and image sensor; d) directing optical radiation onto an area of a surface of a sample to be inspected; e) receiving the radiation scattered from the area using the combination coupled in (c) so as to form a respective image of the area; and f) processing the image so as to detect a defect on the surface.
  • FIG. 1A is a schematic, pictorial illustration of an image intensifier detachably coupled to an image sensor, according to an embodiment of the present invention
  • FIG. 2 is a block diagram that schematically illustrates a system for optical inspection, according to an embodiment of the present invention.
  • FIG. 3 is a schematic side view of an optical collection module including image intensifiers detachably coupled to image sensors, according to an embodiment of the present invention.
  • Described herein are embodiments of the present invention relating to an image intensifier and image sensor which are detachably coupled together, and to methods and systems using such a combination.
  • the combination can no longer be used once the image intensifier tube and/or image sensor fails (assuming for example, that the failed part cannot be repaired or cannot be partially replaced saving the other part while coupled together).
  • the image intensifier tube and image sensor are detachably coupled together, the image intensifier and image sensor can possibly be detached.
  • the image intensifier tube fails, the image sensor may be still be used, for example by detaching the failed image intensifier tube from the image sensor and coupling a replacement image intensifier tube to the detached image sensor.
  • the image intensifier tube fails, the converse may in some cases be true and when an image sensor fails, the failed image sensor may be detached from the image intensifier and a replacement image sensor may be coupled to the detached image intensifier tube.
  • the example of detaching the detachably coupled together image intensifier tube and image sensor in order to replace a failed element should be understood to be a non-limiting example and detachment for any reason is within the scope of the invention.
  • the image intensifier tube and image sensor may be detached in order to clean, repair, inspect, upgrade, etc. one or the other of the elements.
  • the detached image intensifier tube and image sensor may be re-coupled together instead of to replacement image sensor or image intensifier tube respectively.
  • the detached image intensifier may be used independently of any image sensor and/or the detached image sensor may be used independently of any image intensifier, for example the detached image intensifier may be used in front of a photomultiplier tube PMT.
  • the image sensor is comprised in a camera which also comprises necessary electronics. Therefore it may in some cases be more technically accurate to describe the image intensifier as being detachably coupled to the camera.
  • the term camera does not always have a uniform meaning in the art, for clarity of description the terminology used below describes the image sensor as being detachably coupled to the image intensifier or refers to a detachable combination of image intensifier tube and image sensor.
  • DIIS Detachable combination of image Intensifier tube and Image Sensor.
  • FIG. 1A is a schematic view of a DIIS 10 comprising an image intensifier 16 detachably coupled to an image sensor 34 , according to an embodiment of the present invention.
  • image intensifier 16 may be an image intensifier of any generation and/or using any focusing method, as appropriate.
  • first generation image intensifiers are intensifier diodes that utilize only a single potential difference to accelerate electrons from the cathode to the anode (screen).
  • second generation image intensifiers utilize electron multipliers, i.e., not only the energy but also the number of electrons between input and output is significantly increased. Multiplication is achieved by use of a device called a microchannel plate (MCP), i.e. a thin plate of conductive glass containing many small holes.
  • MCP microchannel plate
  • the “third generation image intensifiers” employ MCP intensifiers with Gallium-Arsenide photocathodes (instead of multialkali photocathodes as Cs, Sb, K, Na, etc. normally used in first and second generation intensifiers or instead of bi-alkali or solar blind (CsTs) sometimes used in first or second generation intensifiers) to increase a luminous sensitivity of approximately 1,200 ⁇ A/lm instead of 300 ⁇ A/lm found in the multialkali photocathodes. These GaAs photocathodes are also much more sensitive in the NIR region of the light spectrum. Modified third generation image intensifiers which are filmless (i.e. without an ion barrier film) are sometimes termed “fourth generation image intensifiers” or may be grouped under the term “third generation image intensifiers”.
  • focusing is achieved by any of three approaches.
  • the first approach includes placing the screen in close proximity to the photocathode (proximity focus image intensifier).
  • electrodes focus electrons originating from the photocathode onto the screen (electrostatic image intensifier or inverter image intensifier).
  • a magnetic field parallel to the optical axis causes electrons to complete exactly one (or complete multiplication of one) full turn (magnetically focused image intensifier).
  • image sensor 34 can be any suitable solid state optical image sensor.
  • suitable solid state optical image sensors which can be used as image sensor 34 include inter-alia: a charge coupled device (CCD) or a complementary-symmetry metal-oxide semiconductor (CMOS) device.
  • CCD charge coupled device
  • CMOS complementary-symmetry metal-oxide semiconductor
  • a first fiber optic plate 22 is connected to a photo-emitting output area (back face) of screen unit 20 .
  • a second fiber optic plate 32 connects to a photosensitive input area (front face) of image sensor 34 .
  • each fiber optic plate 22 and 32 is less than 4 fringes (surface quality).
  • one or both of fiber optic plates 22 and 32 have a mechanism for reduced crosstalk (for example fiber optic plate with extra mural absorption EMA).
  • First fiber optic plate 22 and second fiber optic plate 32 are aligned (put into the correct relative position) so that the light issuing from screen unit 20 is transmitted to the photosensitive input surface of image sensor 34 .
  • a detachable attaching medium is used to detachably attach image intensifier tube 16 to image sensor 34 .
  • the term “detachable” refers to an attaching medium which will stop attaching when separation of image intensifier 16 and image sensor 34 from one another is desired.
  • the detachable attaching medium can be removed, released, counteracted, etc. when separation of image intensifier 16 and image sensor 34 from one another is desired. Due to the usage of the detachable attaching medium, the attachment of image sensor 16 and image intensifier 34 as well as the separation of image sensor 16 and image intensifier 34 can be achieved without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 34 , image intensifier 16 or fiber optic plates 22 and 32 ).
  • the detachable attaching medium at least includes an elastic material which allows fiber optic plates 22 and 32 to be pushed close together (for example, when attaching image intensifier 16 and image sensor 34 to one another) without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 16 , image intensifier 34 , and/or fiber optic plates 22 and 32 ).
  • elastic material include inter-alia: spring(s), sponge(s), rubber, etc.
  • detachable attaching medium 50 includes: spring(s) 56 , screws 51 , 53 , and 58 , and mechanical parts 52 and 54 .
  • One or more springs 56 in conjunction with one or more screws 58 are used to connect mechanical part 52 to mechanical part 54 .
  • Mechanical part 52 is shown connected to a camera 70 comprising image sensor 34 and mechanical part 54 is shown connected to image intensifier 14 .
  • mechanical part 52 is shown directly and detachably connected to camera 70 with one or more screws 51 , in other embodiments mechanical part 52 can be indirectly and/or permanently attached to camera 70 . In other embodiments, mechanical part 52 can be directly or indirectly attached, either detachably or non-detachably to image sensor 34 .
  • mechanical part 54 is shown detachably and directly connected to image intensifier 16 with one or more screws 53 , in other embodiments, mechanical part 54 may be indirectly and/or permanently attached to image intensifier tube 16 .
  • mechanical part 52 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34 ) and image intensifier 16 , or for example between camera 70 (or image sensor 34 ) and mechanical part 54 .
  • mechanical part 54 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34 ) and image intensifier 16 , or for example between mechanical part 52 and image intensifier 16 .
  • detachable attachable medium 50 can include screws and springs, with camera 70 held detachably and firmly (for example with screws) to image intensifier tube 16 , and inside camera 70 , image sensor 34 “floats” on springs.
  • FIG. 1A illustrates only one example of possible detachable attaching medium.
  • the detachable attaching medium may comprise less than all of elements 51 , 52 , 53 , 54 , 56 , and 58 .
  • the detachable attaching medium may comprise additional elements in addition to elements 51 , 52 , 53 , 54 , 56 , and 58 .
  • the detachable attaching medium may comprise elements different than some or all of elements 51 , 52 , 53 , 54 , 56 , and 58 .
  • the functionality provided by elements 51 , 52 , 53 , 54 , 56 , and 58 may be distributed differently among those elements.
  • the image intensifier in the DIIS may use any focusing approach, in some applications it may be advantageous to have an image intensifier which is magnetically focused.
  • the usage of a magnetically focused image intensifier in a particular application provides superior optical performance and/or the possibility of enhancing the lifetime of the image intensifier (compared to a proximity focused or electrostatic focused image intensifier).
  • the superior optical performance includes any of the following inter-alia: better resolution, lower halo, and the possibility of having a potential difference greater than 10 to 15 KV in the image intensifier and therefore a higher gain.
  • FIG. 1B illustrates a DIIS which comprises a magnetically focused image intensifier according to an embodiment of the present invention.
  • FIG. 1B replicates the DIIS illustrated in FIG. 1A , however also illustrates is a magnet 60 which surrounds image intensifier 16 .
  • a magnetic field produced by a magnet 60 parallel to the optical axis, causes electrons to complete exactly one full turn.
  • image intensifier 16 as magnetically focused in FIG. 1B should not be construed as binding.
  • the image intensifier in a DIIS of this invention may use any focusing approach, which may vary depending on the embodiment.
  • any of the other screw(s) 51 , 53 may also be unscrewed, and/or any of elements in FIG. 1A which are detachable (for example, any of elements 51 , 52 , 53 , 54 , 56 , and 58 ) may be removed.
  • the non-binding filling which filled the gap between the two fiber optic plates corresponding respectively to the image sensor and image intensifier is removed any time after detaching the image intensifier tube and image sensor from one another.
  • the detached image intensifier and/or image sensor is later detachably attached to each other or to another element, new non-binding filling is applied if necessary.
  • the non-binding filling is not necessarily removed and may optionally be reused when later detachably attaching one or both of the detached image intensifier and/or the image sensor to each other or to another element.
  • FIG. 2 is a block diagram that schematically illustrates a system 220 for optical inspection of a semiconductor wafer 222 , in accordance with an embodiment of the present invention.
  • wafer 222 is patterned, using methods of semiconductor device production known in the art, and system 220 applies dark-field optical techniques to detect defects on the surface of the wafer.
  • system 220 applies dark-field optical techniques to detect defects on the surface of the wafer.
  • the principles embodied in system 220 may be applied to unpatterned wafers and to inspection of other types of samples and surfaces as well, such as masks and reticles.
  • system 220 is dedicated to dark-field inspection, aspects of the present invention may also be applied in bright-field inspection, as well as in other areas of illumination, inspection and imaging.
  • System 220 comprises an illumination module 224 , which illuminates the surface of sample 222 using pulsed laser radiation.
  • module 224 is able to emit the laser radiation selectably at two or more different wavelengths, either simultaneously or one at a time.
  • the laser radiation at any of the laser wavelengths may be directed by module 224 to impinge on wafer 222 either along a normal to the wafer surface or obliquely, as described in further detail in US Published Application Number 20050219518.
  • the illumination module may be configured to emit optical radiation at wavelengths in the visible, ultraviolet (UV) and/or infrared (IR) ranges.
  • UV visible, ultraviolet
  • IR infrared
  • Module 226 comprises collection optics 228 , which image the surface of wafer 222 onto multiple DIIS 230 .
  • Optics 228 may comprise either a single objective with high numerical aperture (NA) or a collection of individual objectives, one for each DIIS 230 . Details of both of these alternative optical configurations are described in further detail in US Published Application Number 20050219518, and details of DIIS 230 are described hereinbelow.
  • Optics 228 and DIIS 230 are arranged so that all the DIIS image the same area on the wafer surface, i.e., the area illuminated by illumination module 224 , while each DIIS 230 captures the radiation that is scattered into a different angular range.
  • Each DIIS 230 includes a two-dimensional array of detector elements, such as a CCD or CMOS array, as is known in the art. Each detector element of each of the arrays is imaged onto a corresponding spot within the area irradiated by illumination module 224 . Thus, the scattering characteristics of any given spot on wafer 222 as a function of angle can be determined based on the signals generated by the corresponding detector elements in the different DIIS 230 .
  • DIIS 230 are typically synchronized with the laser pulses from illumination module by a system controller 232 , so that each image output frame generated by each DIIS 230 corresponds to the radiation scattered from a single laser pulse.
  • the output from each DIIS 230 is received, digitized and analyzed by an image processor 234 .
  • the image processor which is described in further detail in U.S. Published Application Number 20050219518, typically comprises dedicated hardware signal processing circuits and/or programmable digital signal processors (DSPs).
  • a mechanical scanner such as an X-Y-Z stage 236 translates wafer 222 , typically in a raster pattern, so that each laser pulse from illumination module 224 irradiates a different area of the surface of the wafer, adjacent to (and typically slightly overlapping with) the area irradiated by the preceding pulse.
  • the illumination and collection modules may be scanned relative to the wafer.
  • Image processor 234 processes each of the image frames that is output by each DIIS 230 in order to extract image features that may be indicative of defects on the wafer surface.
  • the image features are passed to a host computer 238 , typically a general-purpose computer workstation with suitable software, which analyzes the features in order to generate a defect list (or defect map) with respect to the wafer under inspection.
  • Controller 232 also adjusts the Z-position (height) of stage 236 in order to maintain the proper focus of DIIS 230 on the wafer surface.
  • the controller may adjust the DIIS optics for this purpose.
  • the controller may instruct image processor 234 and host computer 238 to correct for deviations in the scale and registration of the images captured by different DIIS 230 so as to compensate for height variations.
  • controller 232 uses an auto-focus illuminator 240 and an auto-focus sensor module 242 .
  • Illuminator 240 typically comprises a laser (not shown), such as a CW diode laser, which emits a collimated beam at an oblique angle onto or adjacent to the area of the surface of wafer 222 that is illuminated by illumination module 224 , forming a spot on the wafer surface. Variations in the Z-position of wafer 222 relative to collection module 226 will then result in transverse displacement of the spot.
  • Sensor module 242 typically comprises a detector array (also not shown), which captures an image of the spot on the wafer surface.
  • the image of the spot is analyzed in order to detect the transverse position of the spot, which provides controller 32 with a measurement of the Z-position of the wafer surface relative to the collection module.
  • the controller may drive stage 236 until the spot is in a pre-calibrated reference position, indicative of proper focus.
  • illuminator 240 may pass through collection optics 228 on its way to the wafer surface, and sensor module 242 may likewise capture the image of the spot on the surface through the collection optics.
  • illuminator 240 preferably operates in a different wavelength range from illumination module 224 .
  • appropriate filters may be used to block scatter of the auto-focus beam into DIIS 230 , as well as preventing interference of the pulsed beam from module 224 with the auto-focus measurement.
  • a capacitive sensor may be used to determine and adjust the vertical distance between the optics and the wafer surface.
  • FIG. 3 is a schematic side view of collection module 226 , in accordance with an embodiment of the present invention.
  • module 226 is shown as comprising five DIIS 230 .
  • module 226 may comprise a smaller or greater number of DIIS, typically as many as ten DIIS.
  • all the DIIS image scattered radiation from a common area 348 on the surface of wafer 222 , but each DIIS is configured to collect the radiation along a different angular axis (i.e., a different elevation and/or azimuth).
  • system 220 is designed mainly for use in dark-field detection, one or more of DIIS 230 may be used for bright-field detection, as well, in conjunction with either the normal-incidence or oblique-incidence illumination beam.
  • An objective 350 collects and collimates the scattered light from area 348 .
  • objective 350 preferably has a high NA, most preferably as high as 0.95.
  • An exemplary design of objective 350 using multiple refractive elements, is described further in U.S. Published Application Number 20050219518.
  • objective 350 may comprise a reflective or catadioptric element, as described, for example, in U.S. Pat. No. 6,392,793 to Chuang et al, which is hereby incorporated by reference herein.
  • Each of DIIS 230 is positioned, as shown in FIG. 3 , to receive a particular angular portion of the light collected by objective 350 .
  • a bandpass filter 352 selects the wavelength range that the DIIS is to receive. Typically, filter 352 selects one of the two wavelengths emitted by illumination module 224 , while rejecting the other wavelength. Filter 352 may also be implemented as a dichroic beamsplitter, and configured so that one DIIS 230 receives the scattered light along a given angle at one wavelength, while another DIIS receives the scattered light along the same angle at the other wavelength. As a further alternative, filter 352 may be chosen to pass radiation in another wavelength range, such as a band in which wafer 222 is expected to fluoresce.
  • a spatial filter 354 can be used to limit the collection angle of each DIIS 230 , by blocking certain regions of the collimated scattered light.
  • the spatial filter is especially useful in eliminating background diffraction from repetitive features on patterned wafers.
  • the spatial filter is chosen, based on the known diffraction pattern of the features on the wafer surface, to block these strong diffraction nodes, in order to enhance the sensitivity of system 220 to actual defects, as is known in the art.
  • This use of spatial filtering for this purpose is described, for example, in U.S. Pat. No. 6,686,602 to Some, whose disclosure is incorporated herein by reference.
  • This patent describes a method for creating spatial filters adaptively, in response to the diffraction lobes of different sorts of wafer patterns. This method may be implemented in filters 354 in module 226 . Alternatively, spatial filters 354 may comprise fixed patterns, as is known in the art.
  • the optical path may comprise a beamsplitter, which divides the light scattered along a given collection angle between two or more different DIIS 230 .
  • the beamsplitter may be used for wavelength division, as mentioned above, or to divide the same wavelength between the two or more DIIS in a predetermined proportionality.
  • Different spatial filters 354 may be used following the beamsplitter in the beam paths to the different DIIS, in order to filter out diffraction lobes due to different sorts of patterns on the wafer.
  • the beamsplitter may divide the light scattered along a given angle unequally between two or more of the DIIS, for example, in a ratio of 100:1.
  • a focusing lens 358 focuses the collected and filtered light onto DIIS 230 .
  • Lens 358 may be adjustable, either manually or under motorized control.
  • a variable magnifier 360 may be used to change the size of the magnified image received by the DIIS. Alternatively, the functions of lens 358 and magnifier 360 may be combined within a single optical unit for each DIIS.
  • the magnifier determines the resolution of the image captured by DIIS 230 , i.e., the size of the area on the wafer surface that corresponds to each pixel in the output image from the DIIS.
  • Magnifier 360 is typically operated in conjunction with telescopes in illumination module 224 , so that size of the illuminated area is roughly equal to the area imaged by the DIIS.
  • intensifier 362 preferably has high bandwidth and high resolution, and is preferably capable of gated operation, with high current and low phosphor memory, at the repetition rate of laser head 50 —typically up to about 1000 pulses per sec.
  • the useful diameter of intensifier 362 is preferably at least 18 mm. In another embodiment, a larger diameter of intensifier 362 , in the range of 25-40 mm, is used.
  • intensifier 362 may be achieved by any approach (proximity, electrostatic, magnetic), in one embodiment, intensifier 362 is magnetically focused and results in superior optical performance and/or the possibility of enhancing the lifetime, as described above.
  • the image intensifiers 362 in addition to amplifying the incident scattered light, are also useful in downconverting the ultraviolet (UV) and blue light that is scattered from wafer 222 to the green or red range, to which the silicon image sensors are more responsive.
  • intensifiers 362 act as low-pass spatial filters, and may thus help to smooth high-frequency structures in the scattered light that might otherwise cause aliasing in the images output by sensors 366 .
  • Intensifiers 362 are preferably designed to suppress such reflections so that the halo diameter is no more than 0.2 mm in any case. Furthermore, in order to exploit the full range of sensitivity of sensor 366 , intensifier 362 should exhibit linear behavior up to high maximum output brightness (MOB), typically on the order of 600 ⁇ W/cm 2 .
  • MOB maximum output brightness
  • single fiber optic plate 22 coupled to a photo-emitting output area of image intensifier tube 16 (or 362 ) and a single fiber optic plate 32 coupled to a photosensitive input area of image sensor 34 (or 366 ) with a gap between the two plates filled with a non-binding filling 40 .
  • single fiber optic plate 22 may be replaced with a plurality of fiber optic plates 22 and/or single fiber optic plate 32 may be replaced with a plurality of fiber optic plates 32 .
  • That fiber optic plate 22 / 32 can be considered to belong to one or two pairs of adjacent fiber optic plates, respectively.
  • the gap between one pair of adjacent fiber optic plates 22 / 32 is filled with non-binding filling 40 , but the selection of which pair of adjacent plates 22 / 32 out of all possible pairs of adjacent plates 22 / 32 has the gap filled with non-binding filling 40 may vary depending on the embodiment.
  • the detachable attaching medium is assumed to include an elastic material which at least allows the pair of third and fourth fiber optic plates to be pushed close together and the pair of second and fourth fiber optic plates to be pushed close together without substantially damaging any of the fiber optic plates (for example first, second, third and fourth fiber optic plates), image sensor 34 ( 366 ) and/or image intensifier 16 ( 362 ).
  • the detachment process may include inter-alia the separation of second and fourth fiber optic from one another and/or the separation of third and fourth fiber optic plates from one another.

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Abstract

A detachably coupled image intensifier and image sensor combination is disclosed along with systems and methods for using the detachably coupled image intensifier and image sensor combination. In one embodiment, there are at least two fiber optic plates aligned between the image intensifier and image sensor, and an oil or a gel is used to fill some or all of the gap(s) between pair(s) of adjacent fiber optic plates. In one embodiment, the detachably coupled image intensifier and image sensor combination is used for sample inspection.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is a divisional of application Ser. No. 11/516,668 filed Sep. 7, 2006, which is a continuation-in-part of U.S. Ser. No. 10/511,092, filed Apr. 26, 2005; itself a national stage application of PCT/US03/28062, filed Sep. 8, 2003; which claims the benefit of U.S. Provisional Patent Application 60/415,082, filed Sep. 30, 2002.
  • This application also claims the benefit of U.S. Provisional Application 60/715,927, U.S. Provisional Patent Application 60/715,900, and U.S. Provisional Application 60/715,901. Said applications were all filed on Sep. 8, 2005 and are hereby incorporated by reference herein.
  • FIELD OF THE INVENTION
  • This invention relates to image intensifier tubes.
  • BACKGROUND OF THE INVENTION
  • Image intensifier tubes (also known as IIT or image intensifiers) are widely used for sensing and amplifying, or intensifying, light images of low intensity. In these devices, light (usually of visible or near infra-red spectra) from an associated optical system is directed onto a photocathode which emits a distribution of photoelectrons in response to the input radiation.
  • An image intensifier typically includes a vacuum tube with a photocathode unit at one end and a screen unit at the other end. The photocathode unit converts incoming photons to electrons which are accelerated by an electric field (potential difference) in the tube until they hit a screen unit converting them back to photons.
  • The output of the image intensifier tube is fed into a solid state optical image sensor such as a charge coupled device (CCD) or a complementary metal-oxide semiconductor (CMOS) device. The combination of the image intensifier tube and image sensor is sometimes referred to as an intensified image sensor device ICCD or ICMOS.
  • In U.S. Pat. No. 4,980,772 to Kawamura et al, some examples of current methods of coupling the image intensifier tube to an image pickup device are disclosed. In one method, a thin fiber plate is interposed between a phosphor layer of the screen of the image intensifier tube and a photosensitive layer of the image pickup device. In another method, two fiber plates are used to couple an image intensifier tube to the image pickup device. In yet another method, a fiber plate on the output surface of the image intensifier tube is bound to an image pickup device by means of an adhesive.
  • SUMMARY OF THE INVENTION
  • According to the present invention there is provided an apparatus for intensifying and sensing images, comprising: an image intensifier tube; an image sensor; at least two fiber optic plates aligned between a photo-emitting output area of the image intensifier tube and a photosensitive input area of the image sensor so as to allow light issuing from the image intensifier tube to be transmitted to the image sensor; non-binding filling which fills at least one gap which is between at least one pair of adjacent fiber optic plates among the at least two fiber optic plates; and a detachable attaching medium detachably coupling between the image intensifier tube and the image sensor.
  • According to the present invention there is also provided a method of separating an image intensifier tube detachably coupled to an image sensor, comprising: a) providing an image intensifier tube detachably coupled to an image sensor; and b) separating the image intensifier tube from the image sensor; wherein the separating does not substantially damage the image intensifier tube nor the image sensor.
  • According to the present invention there is further provided an apparatus for inspection of a sample, comprising: a radiation source, which is adapted to direct optical radiation onto an area of a surface of the sample; at least one image intensifier, each of which is detachably coupled to an image sensor, so as to receive the radiation from the area over a certain angular range, and to provide intensified radiation to the image sensor; and at least one image sensor, each of which is configured to receive radiation from at least one image intensifier, so as to form at least one respective image of the area.
  • According to the present invention there is provided a method of inspecting a sample, comprising: a) providing at least one image intensifier tube detachably coupled to an image sensor with non-binding filling; b) directing optical radiation onto an area of a surface of a sample to be inspected; c) receiving and intensifying the radiation scattered from the area using the at least one provided detachably coupled image intensifier tube and image sensor, so as to form a respective images of the area, each of the provided detachably coupled image intensifier tube and image sensor being configured to receive the radiation that is scattered to into a different, respective angular range; and d) processing at least one of the respective images so as to detect a defect on the surface.
  • According to the present invention there is also provided a method of inspecting a sample comprising: a) providing an image intensifier tube detachably coupled to an image sensor; b) separating the image intensifier tube from the image sensor; c) coupling at least one of the separated image intensifier tube and image sensor in a combination of image intensifier tube and image sensor; d) directing optical radiation onto an area of a surface of a sample to be inspected; e) receiving the radiation scattered from the area using the combination coupled in (c) so as to form a respective image of the area; and f) processing the image so as to detect a defect on the surface.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • In order to understand the invention and to see how it may be carried out in practice, a preferred embodiment will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:
  • FIG. 1A is a schematic, pictorial illustration of an image intensifier detachably coupled to an image sensor, according to an embodiment of the present invention;
  • FIG. 1B is a schematic pictorial illustration of a magnetically focused image intensifier detachably coupled to an image sensor, according to an embodiment of the present invention;
  • FIG. 2 is a block diagram that schematically illustrates a system for optical inspection, according to an embodiment of the present invention; and
  • FIG. 3 is a schematic side view of an optical collection module including image intensifiers detachably coupled to image sensors, according to an embodiment of the present invention.
  • DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
  • Described herein are embodiments of the present invention relating to an image intensifier and image sensor which are detachably coupled together, and to methods and systems using such a combination.
  • As used herein, the phrase “for example,” “such as” and variants thereof describing exemplary implementations of the present invention are exemplary in nature and not limiting.
  • For example, when an image intensifier tube and image sensor are permanently coupled together, the combination can no longer be used once the image intensifier tube and/or image sensor fails (assuming for example, that the failed part cannot be repaired or cannot be partially replaced saving the other part while coupled together). However, if the image intensifier tube and image sensor are detachably coupled together, the image intensifier and image sensor can possibly be detached. For example, say the image intensifier tube fails, the image sensor may be still be used, for example by detaching the failed image intensifier tube from the image sensor and coupling a replacement image intensifier tube to the detached image sensor. Although in this example it is assumed that the image intensifier tube fails, the converse may in some cases be true and when an image sensor fails, the failed image sensor may be detached from the image intensifier and a replacement image sensor may be coupled to the detached image intensifier tube. The example of detaching the detachably coupled together image intensifier tube and image sensor in order to replace a failed element should be understood to be a non-limiting example and detachment for any reason is within the scope of the invention. For example, the image intensifier tube and image sensor may be detached in order to clean, repair, inspect, upgrade, etc. one or the other of the elements. In some cases, the detached image intensifier tube and image sensor may be re-coupled together instead of to replacement image sensor or image intensifier tube respectively. In some cases, the detached image intensifier may be used independently of any image sensor and/or the detached image sensor may be used independently of any image intensifier, for example the detached image intensifier may be used in front of a photomultiplier tube PMT.
  • Typically although not necessarily, the image sensor is comprised in a camera which also comprises necessary electronics. Therefore it may in some cases be more technically accurate to describe the image intensifier as being detachably coupled to the camera. However since the term camera does not always have a uniform meaning in the art, for clarity of description the terminology used below describes the image sensor as being detachably coupled to the image intensifier or refers to a detachable combination of image intensifier tube and image sensor.
  • Hereinbelow, in order to improve readability, the abbreviation “DIIS” is used for Detachable combination of image Intensifier tube and Image Sensor.
  • FIG. 1A is a schematic view of a DIIS 10 comprising an image intensifier 16 detachably coupled to an image sensor 34, according to an embodiment of the present invention.
  • In the illustrated embodiment, image intensifier tube 16 includes a photocathode unit 14, for example a multialkali photocathode layer on a glass substrate and a screen unit 20, for example a phosphor layer structure on a glass (fiber optic plate) substrate. Any other suitable photocathode and/or screen unit may be used instead.
  • Depending on the embodiment, image intensifier 16 may be an image intensifier of any generation and/or using any focusing method, as appropriate. As is known in the art, there are several known generations of image intensifiers: The so-called “first generation image intensifiers” are intensifier diodes that utilize only a single potential difference to accelerate electrons from the cathode to the anode (screen). The “second generation image intensifiers” utilize electron multipliers, i.e., not only the energy but also the number of electrons between input and output is significantly increased. Multiplication is achieved by use of a device called a microchannel plate (MCP), i.e. a thin plate of conductive glass containing many small holes. In these holes, secondary electron emission occurs which leads to multiplication factors of up to four orders of magnitude. The “third generation image intensifiers” employ MCP intensifiers with Gallium-Arsenide photocathodes (instead of multialkali photocathodes as Cs, Sb, K, Na, etc. normally used in first and second generation intensifiers or instead of bi-alkali or solar blind (CsTs) sometimes used in first or second generation intensifiers) to increase a luminous sensitivity of approximately 1,200 μA/lm instead of 300 μA/lm found in the multialkali photocathodes. These GaAs photocathodes are also much more sensitive in the NIR region of the light spectrum. Modified third generation image intensifiers which are filmless (i.e. without an ion barrier film) are sometimes termed “fourth generation image intensifiers” or may be grouped under the term “third generation image intensifiers”.
  • In these intensifiers, focusing is achieved by any of three approaches. The first approach includes placing the screen in close proximity to the photocathode (proximity focus image intensifier). In the second electrostatic approach, electrodes focus electrons originating from the photocathode onto the screen (electrostatic image intensifier or inverter image intensifier). In the third magnetic focus approach, a magnetic field parallel to the optical axis causes electrons to complete exactly one (or complete multiplication of one) full turn (magnetically focused image intensifier).
  • In some cases, image intensifier 16 may have more than one focusing, for example if an MCP is used, and the more than one focusing may all use the same focusing approach or may use a plurality of different focusing approaches.
  • Depending on the embodiment, image sensor 34 can be any suitable solid state optical image sensor. Examples of possible solid state optical image sensors which can be used as image sensor 34 include inter-alia: a charge coupled device (CCD) or a complementary-symmetry metal-oxide semiconductor (CMOS) device.
  • As illustrated in FIG. 1A, a first fiber optic plate 22 is connected to a photo-emitting output area (back face) of screen unit 20. A second fiber optic plate 32 connects to a photosensitive input area (front face) of image sensor 34. In one embodiment each fiber optic plate 22 and 32 is less than 4 fringes (surface quality). In one embodiment, one or both of fiber optic plates 22 and 32 have a mechanism for reduced crosstalk (for example fiber optic plate with extra mural absorption EMA).
  • First fiber optic plate 22 and second fiber optic plate 32 are aligned (put into the correct relative position) so that the light issuing from screen unit 20 is transmitted to the photosensitive input surface of image sensor 34.
  • Typically, there is a small gap between first fiber optic plate 22 and second fiber optic plate 32. In one embodiment, the gap is about 0 to 5 microns. Therefore, a non-binding filling 40 is used to fill the gap between the two plates 22 and 34. It should be understood by the reader, that the term “non-binding” filling 40 refers to a filling which allows the two fiber optic plates 22 and 32 to be separated from one another (and therefore image intensifier tube 16 and image sensor 34 to be separated from one another) without substantially damaging the DIIS 10 (for example without substantially damaging any of image sensor 34, image intensifier 16 or fiber optic plates 22 and 32).
  • Non-binding filling 40 has an index of refraction which is closer to the index of refraction of fiber optic plates 22 and 34, than the index of refraction of air is to the index of refraction of the fiber optic plates, thereby preventing or minimizing Fresnel reflections. (Without non-binding filling 40, Fresnel reflections would probably occur at the interface between the fiber optic plate and air due to the different refractive indices). For example, non-binding filling 40 may have an index of refraction similar to fiber optic plates 22 and 32. Continuing with the example, the index of refraction of non-binding filling 40 may be about 1.8. In another example, the index of refraction of non-binding filling 40 is not an identical match to that of the fiber optic plates. Continuing with the example, the index of non-binding filling 40 may be about 1.5.
  • Non-binding filling 40 can be for example a gel or an oil. In one embodiment, non-binding filling 40 has minimal outgassing. The size of the gap and the index value stated above are provided solely for further illustration to the reader and should not be construed as limiting.
  • A detachable attaching medium is used to detachably attach image intensifier tube 16 to image sensor 34. The reader should understand that the term “detachable” refers to an attaching medium which will stop attaching when separation of image intensifier 16 and image sensor 34 from one another is desired. For example, the detachable attaching medium can be removed, released, counteracted, etc. when separation of image intensifier 16 and image sensor 34 from one another is desired. Due to the usage of the detachable attaching medium, the attachment of image sensor 16 and image intensifier 34 as well as the separation of image sensor 16 and image intensifier 34 can be achieved without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 34, image intensifier 16 or fiber optic plates 22 and 32).
  • In one embodiment the detachable attaching medium at least includes an elastic material which allows fiber optic plates 22 and 32 to be pushed close together (for example, when attaching image intensifier 16 and image sensor 34 to one another) without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 16, image intensifier 34, and/or fiber optic plates 22 and 32). Examples of elastic material include inter-alia: spring(s), sponge(s), rubber, etc.
  • In the illustrated embodiment of FIG. 1A, detachable attaching medium 50 includes: spring(s) 56, screws 51, 53, and 58, and mechanical parts 52 and 54. One or more springs 56 in conjunction with one or more screws 58 are used to connect mechanical part 52 to mechanical part 54. Mechanical part 52 is shown connected to a camera 70 comprising image sensor 34 and mechanical part 54 is shown connected to image intensifier 14. Although mechanical part 52 is shown directly and detachably connected to camera 70 with one or more screws 51, in other embodiments mechanical part 52 can be indirectly and/or permanently attached to camera 70. In other embodiments, mechanical part 52 can be directly or indirectly attached, either detachably or non-detachably to image sensor 34. Although mechanical part 54 is shown detachably and directly connected to image intensifier 16 with one or more screws 53, in other embodiments, mechanical part 54 may be indirectly and/or permanently attached to image intensifier tube 16. In other embodiments mechanical part 52 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34) and image intensifier 16, or for example between camera 70 (or image sensor 34) and mechanical part 54. In other embodiments, mechanical part 54 may be omitted and for example, one or more springs in conjunction with one or more screws may connect for example between camera 70 (or image sensor 34) and image intensifier 16, or for example between mechanical part 52 and image intensifier 16. In another embodiment, detachable attachable medium 50 can include screws and springs, with camera 70 held detachably and firmly (for example with screws) to image intensifier tube 16, and inside camera 70, image sensor 34 “floats” on springs.
  • In one embodiment, first fiber optic plate 22 and image intensifier 16 are commercially available as one unit and/or permanently coupled together and are thus shown in FIG. 1A. In one embodiment, second fiber optic plate 32, camera 70 and image sensor 34 are commercially available as one unit and/or permanently coupled together and are thus shown in FIG. 1A. However it should be evident that in other embodiments, some or all of these elements may be detachably coupled to one another. For example, in one embodiment, image sensor 34 may be detachably coupled to camera 70.
  • It should be evident that FIG. 1A illustrates only one example of possible detachable attaching medium. In other embodiments, the detachable attaching medium may comprise less than all of elements 51, 52, 53, 54, 56, and 58. In other embodiments, the detachable attaching medium may comprise additional elements in addition to elements 51, 52, 53, 54, 56, and 58. In other embodiments, the detachable attaching medium may comprise elements different than some or all of elements 51, 52, 53, 54, 56, and 58. In other embodiments, the functionality provided by elements 51, 52, 53, 54, 56, and 58 may be distributed differently among those elements.
  • Although as mentioned above image the image intensifier in the DIIS may use any focusing approach, in some applications it may be advantageous to have an image intensifier which is magnetically focused. For example, in some cases the usage of a magnetically focused image intensifier in a particular application provides superior optical performance and/or the possibility of enhancing the lifetime of the image intensifier (compared to a proximity focused or electrostatic focused image intensifier). In some of these cases the superior optical performance includes any of the following inter-alia: better resolution, lower halo, and the possibility of having a potential difference greater than 10 to 15 KV in the image intensifier and therefore a higher gain.
  • For the sake of further illustration to the reader, FIG. 1B illustrates a DIIS which comprises a magnetically focused image intensifier according to an embodiment of the present invention. For simplicity's sake FIG. 1B replicates the DIIS illustrated in FIG. 1A, however also illustrates is a magnet 60 which surrounds image intensifier 16. A magnetic field produced by a magnet 60, parallel to the optical axis, causes electrons to complete exactly one full turn.
  • Magnet 60 is shown detachably attached to mechanical part 52 with one or more screws 62 in FIG. 1B. In other embodiments magnet 60 can be placed around image intensifier 14 using a different technique.
  • The illustration of image intensifier 16 as magnetically focused in FIG. 1B should not be construed as binding. The image intensifier in a DIIS of this invention may use any focusing approach, which may vary depending on the embodiment.
  • The combination of elements in a DIIS may vary depending on the embodiment and is not limited to the combination of elements illustrated in FIG. 1A or 1B. At a minimum, a DIIS comprises an image sensor and an image intensifier in a detachable combination. However, other elements shown in FIG. 1A or 1B may in some embodiments be omitted from a DIIS. In some embodiments, additional elements not shown in FIGS. 1A and 1B may be included in a DIIS.
  • In some embodiments, the image intensifier tube and the image sensor in the DIIS are later detached from one another. For example, assume an image intensifier tube and an image sensor have been previously detachably connected together into a DIIS, for example as illustrated in FIG. 1A. Assuming the configuration illustrated in FIG. 1A, at a later point in time, image intensifier tube 16 and first fiber optic plate 22 may be detached from image sensor 34 and second fiber optic plate 32, without substantially damaging DIIS 10 (for example without substantially damaging any of image sensor 16, image intensifier 34, and/or fiber optic plates 22 and 32). For example, at least screw(s) 58 may be unscrewed, releasing the connection between mechanical parts 52 and 54. Optionally, depending on the embodiment, any of the other screw(s) 51, 53 may also be unscrewed, and/or any of elements in FIG. 1A which are detachable (for example, any of elements 51, 52, 53, 54, 56, and 58) may be removed.
  • Once detached, the image intensifier tube and/or image sensor may be retained as is, processed as is (for example inspected), modified (for example repaired, upgraded, or cleaned) or discarded. Optionally, the detached image intensifier tube and/or image sensor may be re-attached together, or one or both may be reattached to another element (e.g. to respectively another image sensor or image intensifier tube, or to a different device). For example, in one embodiment, detachment may occur upon the failure or degradation of the image intensifier tube and the detached image sensor may later be attached to another image intensifier tube, either detachably as described above or permanently. It is also possible that one or both of the detached image intensifier tube and/or image sensor may not be later attached to any other element.
  • In one embodiment, the non-binding filling which filled the gap between the two fiber optic plates corresponding respectively to the image sensor and image intensifier, is removed any time after detaching the image intensifier tube and image sensor from one another. In this embodiment, if the detached image intensifier and/or image sensor is later detachably attached to each other or to another element, new non-binding filling is applied if necessary. However, in another embodiment, the non-binding filling is not necessarily removed and may optionally be reused when later detachably attaching one or both of the detached image intensifier and/or the image sensor to each other or to another element.
  • Applications which incorporate one or more DIIS in accordance with embodiments described above are not limited by the invention. For further illumination to the reader, however, it will now be described an application incorporating an embodiment of a DIIS, namely a dark field inspection system for inspecting wafers as described in co-pending and co-assigned U.S. Ser. No. 10/511,092 (U.S. published application number 20050219518), said application hereby incorporated by reference herein FIG. 2 is a block diagram that schematically illustrates a system 220 for optical inspection of a semiconductor wafer 222, in accordance with an embodiment of the present invention. Typically, wafer 222 is patterned, using methods of semiconductor device production known in the art, and system 220 applies dark-field optical techniques to detect defects on the surface of the wafer. Alternatively, however, the principles embodied in system 220 may be applied to unpatterned wafers and to inspection of other types of samples and surfaces as well, such as masks and reticles. Furthermore, although system 220 is dedicated to dark-field inspection, aspects of the present invention may also be applied in bright-field inspection, as well as in other areas of illumination, inspection and imaging.
  • System 220 comprises an illumination module 224, which illuminates the surface of sample 222 using pulsed laser radiation. Typically, module 224 is able to emit the laser radiation selectably at two or more different wavelengths, either simultaneously or one at a time. The laser radiation at any of the laser wavelengths may be directed by module 224 to impinge on wafer 222 either along a normal to the wafer surface or obliquely, as described in further detail in US Published Application Number 20050219518. The illumination module may be configured to emit optical radiation at wavelengths in the visible, ultraviolet (UV) and/or infrared (IR) ranges. The terms “illumination” and “optical radiation” as used herein should therefore be understood as referring to any or all of the visible, UV and IR ranges.
  • The radiation scattered from wafer 222 is collected over a large range of angles by an optical collection module 226. Module 226 comprises collection optics 228, which image the surface of wafer 222 onto multiple DIIS 230. Optics 228 may comprise either a single objective with high numerical aperture (NA) or a collection of individual objectives, one for each DIIS 230. Details of both of these alternative optical configurations are described in further detail in US Published Application Number 20050219518, and details of DIIS 230 are described hereinbelow. Optics 228 and DIIS 230 are arranged so that all the DIIS image the same area on the wafer surface, i.e., the area illuminated by illumination module 224, while each DIIS 230 captures the radiation that is scattered into a different angular range. Each DIIS 230 includes a two-dimensional array of detector elements, such as a CCD or CMOS array, as is known in the art. Each detector element of each of the arrays is imaged onto a corresponding spot within the area irradiated by illumination module 224. Thus, the scattering characteristics of any given spot on wafer 222 as a function of angle can be determined based on the signals generated by the corresponding detector elements in the different DIIS 230.
  • DIIS 230 are typically synchronized with the laser pulses from illumination module by a system controller 232, so that each image output frame generated by each DIIS 230 corresponds to the radiation scattered from a single laser pulse. The output from each DIIS 230 is received, digitized and analyzed by an image processor 234. The image processor which is described in further detail in U.S. Published Application Number 20050219518, typically comprises dedicated hardware signal processing circuits and/or programmable digital signal processors (DSPs). A mechanical scanner, such as an X-Y-Z stage 236 translates wafer 222, typically in a raster pattern, so that each laser pulse from illumination module 224 irradiates a different area of the surface of the wafer, adjacent to (and typically slightly overlapping with) the area irradiated by the preceding pulse. Alternatively or additionally, the illumination and collection modules may be scanned relative to the wafer.
  • Image processor 234, processes each of the image frames that is output by each DIIS 230 in order to extract image features that may be indicative of defects on the wafer surface. The image features are passed to a host computer 238, typically a general-purpose computer workstation with suitable software, which analyzes the features in order to generate a defect list (or defect map) with respect to the wafer under inspection.
  • The area irradiated by module 224 and imaged by DIIS 230 can be scanned using stage 236 over the entire wafer surface, or over a selected area of the surface. If the pulses emitted by module 224 are sufficiently short, substantially less than 1 μs, for example, stage 236 may translate wafer 222 continuously in this manner without causing significant blur in the images captured by the DIIS. The irradiated area typically has dimensions on the order of 2×1 mm, although the area can be enlarged or reduced using magnification optics in the illumination module as described in more detail in U.S. Published Application Number 20050219518. Assuming each DIIS 230 includes an array of about 2000×1000 detector elements, the size of each pixel projected onto the wafer surface is then roughly 1×1 μm. With module 224 operating at a repetition rate of 400 pulses/sec, the data output rate of each DIIS 230 to image processor 234 will be 800 Mpixels/sec. At this rate, for instance, an entire 12″ semiconductor wafer can be scanned at 1 μm resolution in less than 2 min. It will be understood, however, that these typical figures of image resolution, size and speed are cited solely by way of example, and larger or smaller figures may be used depending on system speed and resolution requirements.
  • Controller 232 also adjusts the Z-position (height) of stage 236 in order to maintain the proper focus of DIIS 230 on the wafer surface. Alternatively or additionally, the controller may adjust the DIIS optics for this purpose. Further alternatively or additionally, the controller may instruct image processor 234 and host computer 238 to correct for deviations in the scale and registration of the images captured by different DIIS 230 so as to compensate for height variations.
  • In order to verify and adjust the focus, controller 232 uses an auto-focus illuminator 240 and an auto-focus sensor module 242. Illuminator 240 typically comprises a laser (not shown), such as a CW diode laser, which emits a collimated beam at an oblique angle onto or adjacent to the area of the surface of wafer 222 that is illuminated by illumination module 224, forming a spot on the wafer surface. Variations in the Z-position of wafer 222 relative to collection module 226 will then result in transverse displacement of the spot. Sensor module 242 typically comprises a detector array (also not shown), which captures an image of the spot on the wafer surface. The image of the spot is analyzed in order to detect the transverse position of the spot, which provides controller 32 with a measurement of the Z-position of the wafer surface relative to the collection module. The controller may drive stage 236 until the spot is in a pre-calibrated reference position, indicative of proper focus.
  • The beam emitted by illuminator 240 may pass through collection optics 228 on its way to the wafer surface, and sensor module 242 may likewise capture the image of the spot on the surface through the collection optics. In this case, illuminator 240 preferably operates in a different wavelength range from illumination module 224. Thus, appropriate filters may be used to block scatter of the auto-focus beam into DIIS 230, as well as preventing interference of the pulsed beam from module 224 with the auto-focus measurement.
  • Alternatively, other means of auto-focus detection may be used, as are known in the art. For example, a capacitive sensor may be used to determine and adjust the vertical distance between the optics and the wafer surface.
  • FIG. 3 is a schematic side view of collection module 226, in accordance with an embodiment of the present invention. In this embodiment and in the embodiment shown in FIG. 2, module 226 is shown as comprising five DIIS 230. Alternatively, module 226 may comprise a smaller or greater number of DIIS, typically as many as ten DIIS. As noted above, all the DIIS image scattered radiation from a common area 348 on the surface of wafer 222, but each DIIS is configured to collect the radiation along a different angular axis (i.e., a different elevation and/or azimuth). Although system 220 is designed mainly for use in dark-field detection, one or more of DIIS 230 may be used for bright-field detection, as well, in conjunction with either the normal-incidence or oblique-incidence illumination beam.
  • An objective 350 collects and collimates the scattered light from area 348. In order to collect scattered light at low elevation, objective 350 preferably has a high NA, most preferably as high as 0.95. An exemplary design of objective 350, using multiple refractive elements, is described further in U.S. Published Application Number 20050219518. Alternatively, objective 350 may comprise a reflective or catadioptric element, as described, for example, in U.S. Pat. No. 6,392,793 to Chuang et al, which is hereby incorporated by reference herein. Each of DIIS 230 is positioned, as shown in FIG. 3, to receive a particular angular portion of the light collected by objective 350.
  • For each DIIS 230, a bandpass filter 352 selects the wavelength range that the DIIS is to receive. Typically, filter 352 selects one of the two wavelengths emitted by illumination module 224, while rejecting the other wavelength. Filter 352 may also be implemented as a dichroic beamsplitter, and configured so that one DIIS 230 receives the scattered light along a given angle at one wavelength, while another DIIS receives the scattered light along the same angle at the other wavelength. As a further alternative, filter 352 may be chosen to pass radiation in another wavelength range, such as a band in which wafer 222 is expected to fluoresce. For example, when organic materials, such as photoresist, are irradiated at 266 nm, they tend to fluoresce in the range of 400 nm. Thus, setting filter 152 to pass light in the 400 nm band allows DIIS 230 to detect defects in the organic material or residues thereof.
  • A spatial filter 354 can be used to limit the collection angle of each DIIS 230, by blocking certain regions of the collimated scattered light. The spatial filter is especially useful in eliminating background diffraction from repetitive features on patterned wafers. The spatial filter is chosen, based on the known diffraction pattern of the features on the wafer surface, to block these strong diffraction nodes, in order to enhance the sensitivity of system 220 to actual defects, as is known in the art. This use of spatial filtering for this purpose is described, for example, in U.S. Pat. No. 6,686,602 to Some, whose disclosure is incorporated herein by reference. This patent describes a method for creating spatial filters adaptively, in response to the diffraction lobes of different sorts of wafer patterns. This method may be implemented in filters 354 in module 226. Alternatively, spatial filters 354 may comprise fixed patterns, as is known in the art.
  • A rotatable polarizer 356 is provided in the optical path in order to select the direction of polarization of scattered light that is to be received by DIIS 230. The polarizer is useful, for example, in improving detection sensitivity by rejecting background scatter due to rough and/or highly-reflective surface structures on wafer 222. Optionally, polarizer 356 is implemented as a polarizing beamsplitter, which is configured so that two DIIS 230 receive the light scattered along a given angle in orthogonal polarizations.
  • As a further option (not shown in the figures), the optical path may comprise a beamsplitter, which divides the light scattered along a given collection angle between two or more different DIIS 230. The beamsplitter may be used for wavelength division, as mentioned above, or to divide the same wavelength between the two or more DIIS in a predetermined proportionality. Different spatial filters 354 may be used following the beamsplitter in the beam paths to the different DIIS, in order to filter out diffraction lobes due to different sorts of patterns on the wafer. As a further alternative, the beamsplitter may divide the light scattered along a given angle unequally between two or more of the DIIS, for example, in a ratio of 100:1. This arrangement effectively increases the dynamic range of system 220, since the DIIS receiving the smaller share of the radiation is still able to generate meaningful image data even in areas of bright scatter, in which the DIIS receiving the larger share of the radiation is saturated. An arrangement of this sort is described, for example, in U.S. Pat. No. 6,657,714 to Almogy et al whose disclosure is incorporated herein by reference.
  • A focusing lens 358 focuses the collected and filtered light onto DIIS 230. Lens 358 may be adjustable, either manually or under motorized control. A variable magnifier 360 may be used to change the size of the magnified image received by the DIIS. Alternatively, the functions of lens 358 and magnifier 360 may be combined within a single optical unit for each DIIS. The magnifier determines the resolution of the image captured by DIIS 230, i.e., the size of the area on the wafer surface that corresponds to each pixel in the output image from the DIIS. Magnifier 360 is typically operated in conjunction with telescopes in illumination module 224, so that size of the illuminated area is roughly equal to the area imaged by the DIIS.
  • Each DIIS 230 comprises an image intensifier 362, whose photocathode is aligned at the image plane of the focusing lens 358 and magnifier 360. Any suitable type of image intensifier tube of any generation/focusing approach(es) may be used for this purpose. For the sake of further illustration to the reader, non-limiting examples include first and second generation image intensifiers such as the C6654 image intensifier produced by Hamamatsu Photonics K.K. (Shizuoka-ken, Japan) or first generation magnetically focused image intensifiers produced by Photek Ltd (East Sussex, UK). To provide optimal imaging in the demanding environment of system 220, intensifier 362 preferably has high bandwidth and high resolution, and is preferably capable of gated operation, with high current and low phosphor memory, at the repetition rate of laser head 50—typically up to about 1000 pulses per sec. In one embodiment, the useful diameter of intensifier 362 is preferably at least 18 mm. In another embodiment, a larger diameter of intensifier 362, in the range of 25-40 mm, is used.
  • Although as mentioned above, focusing in intensifier 362 may be achieved by any approach (proximity, electrostatic, magnetic), in one embodiment, intensifier 362 is magnetically focused and results in superior optical performance and/or the possibility of enhancing the lifetime, as described above.
  • The output of image intensifier 362 is focused by optics 364 onto an image sensor 366. The optics 364 comprises, two fiber optic plates with a non-binding filling in the gap between the two plates as illustrated and described above with reference to FIGS. 1A and 1B. Image sensor 366 comprises a two-dimensional matrix of detector elements, such as a CCD or CMOS array, as is known in the art. For example, the image sensor may comprise a CMOS digital image sensor, such as model MI-MV13, made by Micron Technology Inc. (Boise, Id.). This sensor has 1280×1024 pixels, with 12 μm vertical and horizontal pitch, and a frame rate up to 500 frames per second for full frames. A detachable attaching medium is used to attach image intensifier 362 to image sensor 366 in DIIS 230, as illustrated and described above with reference to FIGS. 1A and 1A.
  • The use of image intensifiers 362 increases the sensitivity substantially compared to using image sensors 366 alone without intensification. Image intensifiers 362 intensifiers may be gated, in synchronization with the light pulses from illumination module 224, in order to increase the sensitivity of the DIIS and reduce their noise levels still further. Typically, the photocathodes of intensifiers 362 are chosen to have high quantum efficiency at the wavelengths emitted by the illumination module 224, while the phosphors of the intensifiers 362 may be chosen to emit light in a different wavelength range in which image sensors 366 have high responsivity. Thus, the image intensifiers 362, in addition to amplifying the incident scattered light, are also useful in downconverting the ultraviolet (UV) and blue light that is scattered from wafer 222 to the green or red range, to which the silicon image sensors are more responsive. In addition, intensifiers 362 act as low-pass spatial filters, and may thus help to smooth high-frequency structures in the scattered light that might otherwise cause aliasing in the images output by sensors 366.
  • Intensifiers 362 preferably have high resolution, as dictated by the resolution of sensors 366. For example, to take full advantage of the resolution of the above-mentioned MV13 sensor, intensifier 362 should be designed to provide 1640 distinct pixels along the image diagonal. This resolution criterion may also be expressed in terms of the modulation transfer function (MTF) of the intensifier, giving for example MTF=30% for a test image with 33 line pairs/mm or 30%-40% at 40 line pairs/mm depending on the embodiment of intensifiers 362. Bright points in the image captured by DIIS 230 can result in formation of a bright halo, generally due to reflections inside the image intensifier tube, which may compromise the resolution of the image. Intensifiers 362 are preferably designed to suppress such reflections so that the halo diameter is no more than 0.2 mm in any case. Furthermore, in order to exploit the full range of sensitivity of sensor 366, intensifier 362 should exhibit linear behavior up to high maximum output brightness (MOB), typically on the order of 600 μW/cm2.
  • For brevity of description, other details relating to system 220 as provided in U.S. published application number 20050219518 are hereby incorporated by reference rather than being replicated here.
  • For ease of understanding, the description above described a single fiber optic plate 22 coupled to a photo-emitting output area of image intensifier tube 16 (or 362) and a single fiber optic plate 32 coupled to a photosensitive input area of image sensor 34 (or 366) with a gap between the two plates filled with a non-binding filling 40. However, it should be evident to the reader that in some embodiments single fiber optic plate 22 may be replaced with a plurality of fiber optic plates 22 and/or single fiber optic plate 32 may be replaced with a plurality of fiber optic plates 32. In addition, or instead there may be fiber optic plates in between image intensifier tube 16 (or 362) and image sensor 34 (or 366) which are not clearly associated with either image intensifier 16 (362) or image sensor 34 (366). Therefore in order to understand the possible embodiments, the reader should recognize that there are at least two fiber optic plates between the photo-emitting output area of image intensifier tubes 16 (362) and the photosensitive input area of image intensifier 34 (366). (For ease of explanation, each fiber optic plate is designated 22/32 because the association or non-association of each plate with image intensifier tube 16 (362) or image sensor 34 (366) may vary with the embodiment). Depending on whether a particular fiber optic plate 22/32 has a neighboring fiber optic plate 22/32 on one side or both sides, that fiber optic plate 22/32 can be considered to belong to one or two pairs of adjacent fiber optic plates, respectively. The gap between one pair of adjacent fiber optic plates 22/32 is filled with non-binding filling 40, but the selection of which pair of adjacent plates 22/32 out of all possible pairs of adjacent plates 22/32 has the gap filled with non-binding filling 40 may vary depending on the embodiment. Also depending on the embodiment, if there are other pairs of adjacent fiber optic plates 22/32, the gap(s) between all other pair(s) of adjacent fiber optic plates 22/32 may be filled with non-binding filling 40, the gap(s) between all other pair(s) of adjacent fiber optic plates 22/32 may be filled with a known in the art adhesive, or some of the gap(s) between the other pair(s) of adjacent fiber optic plates 22/32 may be filled with non-binding filling 40 whereas the gap(s) between other(s) of the other pair(s) of adjacent fiber optic plates 22/32 may be filled with a known in the art adhesive. The reader will recognize that as long as the gap between at least one pair of adjacent fiber optic plates 22/32 is filled with non-binding filling 40, those pair(s) of adjacent fiber optic plates 22/32 may be separated from one another (and therefore image intensifier tube 16 (362) and image sensor 34 (366) may be separated from one another) without substantially damaging the DIIS 10 (for example without substantially damaging any of image sensor 34 (366), image intensifier 16 (362) or fiber optic plates 22/32).
  • The methods and systems described above, apply to embodiments with more than two fiber optic plates 22/32 between the photo-emitting output area of image intensifier tubes 16 (362) and the photosensitive input area of image intensifier 34 (366), mutatis mutandis. An example is now provided which uses more than two fiber optic plates 22/32. The number of plates, types of bindings between the plates, and other assumptions of the example are provided solely for further illustration to the reader and should therefore not be construed as limiting. It is assumed that a first fiber optic plate is coupled to image intensifier 16 (362) and a second fiber optic plate is attached with an adhesive to the first fiber optic plate. It is further assumed that a third fiber optic plate is coupled to image sensor 34 (366) and a fourth fiber optic plate is aligned between third fiber optic plate and second fiber optic plate. It is further assumed that a non-binding filling 40 fills the gap between the pair of third fiber optic plate and fourth fiber optic plate and a non-binding filling 40 (not necessarily the same filling) fills the gap between the pair of second fiber optic plate and fourth fiber optic plate. In this example, when detachably attaching image sensor 34 (366 to image intensifier 16 (362) using a detachable attaching medium as described above, it is assumed that at least the pair of third fiber optic plate and fourth optic plate are pushed close together and the pair of second fiber optic plate and fourth fiber optic plate are pushed close together. In one embodiment of the example, the detachable attaching medium is assumed to include an elastic material which at least allows the pair of third and fourth fiber optic plates to be pushed close together and the pair of second and fourth fiber optic plates to be pushed close together without substantially damaging any of the fiber optic plates (for example first, second, third and fourth fiber optic plates), image sensor 34 (366) and/or image intensifier 16 (362). In this example if detachment of image sensor 34 (366) from image intensifier 16 (362) is later desired as described above, then in some embodiments the detachment process may include inter-alia the separation of second and fourth fiber optic from one another and/or the separation of third and fourth fiber optic plates from one another.
  • While the invention has been shown and described with respect to particular embodiments, it is not thus limited. Numerous modifications, changes and improvements within the scope of the invention will now occur to the reader.

Claims (12)

1. An apparatus for inspection of a sample, comprising:
a radiation source, which is adapted to direct optical radiation onto an area of a surface of the sample;
at least one image intensifier, each of which is detachably coupled to an image sensor, so as to receive the radiation from the area over a certain angular range, and to provide intensified radiation to the image sensor; and
at least one image sensor, each of which is configured to receive radiation from at least one image intensifier, so as to form at least one respective image of the area.
2. The apparatus of claim 1, further comprising: an image processor, which is adapted to process at least one of the respective images so as to detect a defect on the surface.
3. The apparatus of claim 1, further comprising at least two fiber optic plates for each image intensifier, wherein said image intensifier is further detachably coupled to one of the image sensors using said at least two fiber optic plates, and wherein non-binding filling fills at least one gap which is between at least one pair of adjacent fiber optic plates among said at least two fiber optic plates.
4. The apparatus of claim 3, wherein said non-binding filling is an oil or gel with an index of refraction that is closer to an index of refraction of said fiber optic plates than an index of refraction of air is to said index of refraction of said fiber optic plates.
5. The apparatus of claim 3, further comprising: a detachable attaching medium detachably coupling each said image intensifier to one of the image sensors, wherein said medium includes an elastic material configured to at least allow said at least one pair of adjacent fiber optic plates to be pushed close together without substantially damaging any of said image intensifier tube, image sensor, and said fiber optic plates.
6. The apparatus of claim 1, further comprising: a detachable attaching medium detachably coupling each said image intensifier to one of the image sensors.
7. The apparatus of claim 6, wherein said detachable attaching medium includes at least one screw configured when screwed in to prevent separation of each said image intensifier tube from said one image sensor.
8. The apparatus of claim 1, wherein at least one of said image intensifiers is magnetically coupled.
9. A method of inspecting a sample, comprising:
a. providing at least one image intensifier tube detachably coupled to an image sensor with non-binding filling;
b. directing optical radiation onto an area of a surface of a sample to be inspected;
c. receiving and intensifying the radiation scattered from the area using said at least one provided detachably coupled image intensifier tube and image sensor, so as to form a respective images of the area, each of said provided detachably coupled image intensifier tube and image sensor being configured to receive the radiation that is scattered to into a different, respective angular range; and
d. processing at least one of the respective images so as to detect a defect on the surface.
10. The method of claim 9, wherein said non-binding filling fills at least one gap which is between at least one pair of adjacent fiber optic plates among at least two fiber optic plates aligned between said image intensifier tube and said image sensor.
11. A method of inspecting a sample comprising:
a. providing an image intensifier tube detachably coupled to an image sensor;
b. separating said image intensifier tube from said image sensor;
c. coupling at least one of said separated image intensifier tube and image sensor in a combination of image intensifier tube and image sensor;
d. directing optical radiation onto an area of a surface of a sample to be inspected;
e. receiving the radiation scattered from the area using said combination coupled in (c) so as to form a respective image of the area; and
f. processing said image so as to detect a defect on the surface.
12. The method of claim 11, wherein said coupling in (c) includes detachably coupling the same or different image intensifier tube to said separated image sensor using at least two fiber optic plates and a non-binding filling which fills at least one gap which is between at least one pair of adjacent fiber optic plates among said at least two fiber optic plates.
US11/929,216 2002-09-30 2007-10-30 Detachably coupled image intensifier and image sensor Abandoned US20080054166A1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080297783A1 (en) * 2007-04-25 2008-12-04 Yuta Urano Defect inspection system and method of the same
US9110034B1 (en) * 2013-09-16 2015-08-18 L-3 Communications Corp. Night vision device test apparatus
US20150369753A1 (en) * 2011-07-12 2015-12-24 Kla-Tencor Corporation Wafer Inspection
WO2018127757A1 (en) * 2017-01-05 2018-07-12 Illumina, Inc. Modular optical analytic systems and methods
JP2021056146A (en) * 2019-09-30 2021-04-08 国立大学法人 奈良先端科学技術大学院大学 Plant sensing device and real-time plant monitoring system

Families Citing this family (173)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7584893B2 (en) 1998-03-24 2009-09-08 Metrologic Instruments, Inc. Tunnel-type digital imaging system for use within retail shopping environments such as supermarkets
US8042740B2 (en) 2000-11-24 2011-10-25 Metrologic Instruments, Inc. Method of reading bar code symbols on objects at a point-of-sale station by passing said objects through a complex of stationary coplanar illumination and imaging planes projected into a 3D imaging volume
CN1685220B (en) * 2002-09-30 2010-04-28 应用材料以色列股份有限公司 dark field detection system
US7265900B2 (en) * 2002-09-30 2007-09-04 Applied Materials, Inc. Inspection system with oblique viewing angle
US7525659B2 (en) 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
US7365834B2 (en) * 2003-06-24 2008-04-29 Kla-Tencor Technologies Corporation Optical system for detecting anomalies and/or features of surfaces
JP5006040B2 (en) * 2003-09-04 2012-08-22 ケーエルエー−テンカー コーポレイション Method and system for inspection of specimens using different inspection parameters
US7558999B2 (en) * 2004-05-21 2009-07-07 International Business Machines Corporation Learning based logic diagnosis
JP2005337851A (en) * 2004-05-26 2005-12-08 Hitachi High-Technologies Corp Defect inspection method and apparatus
JP2006029881A (en) * 2004-07-14 2006-02-02 Hitachi High-Technologies Corp Pattern defect inspection method and apparatus
US7471382B2 (en) * 2004-10-04 2008-12-30 Kla-Tencor Technologies Corporation Surface inspection system with improved capabilities
US7804993B2 (en) 2005-02-28 2010-09-28 Applied Materials South East Asia Pte. Ltd. Method and apparatus for detecting defects in wafers including alignment of the wafer images so as to induce the same smear in all images
US7813541B2 (en) 2005-02-28 2010-10-12 Applied Materials South East Asia Pte. Ltd. Method and apparatus for detecting defects in wafers
GB0504913D0 (en) * 2005-03-10 2005-04-13 Eastman Kodak Co Method and apparatus for digital processing of images
US20070051879A1 (en) * 2005-09-08 2007-03-08 Tal Kuzniz Image Intensifier Device and Method
US7498557B2 (en) 2005-09-08 2009-03-03 Applied Materials Israel Ltd. Cascaded image intensifier
JP4996856B2 (en) 2006-01-23 2012-08-08 株式会社日立ハイテクノロジーズ Defect inspection apparatus and method
EP1982160A4 (en) * 2006-02-09 2016-02-17 Kla Tencor Tech Corp Methods and systems for determining a characteristic of a wafer
US8031931B2 (en) 2006-04-24 2011-10-04 Applied Materials South East Asia Pte. Ltd. Printed fourier filtering in optical inspection tools
US7659973B2 (en) * 2006-05-26 2010-02-09 Applied Materials Southeast Asia, Pte Ltd. Wafer inspection using short-pulsed continuous broadband illumination
KR100806795B1 (en) * 2006-09-12 2008-02-27 동부일렉트로닉스 주식회사 Auto focus system
JP2008116405A (en) * 2006-11-07 2008-05-22 Hitachi High-Technologies Corp Defect inspection method and apparatus
US7714997B2 (en) 2006-11-07 2010-05-11 Hitachi High-Technologies Corporation Apparatus for inspecting defects
JP5281741B2 (en) * 2006-12-13 2013-09-04 株式会社日立ハイテクノロジーズ Defect inspection equipment
JP5713562B2 (en) * 2007-01-30 2015-05-07 エフ・ポスザツト・ヒユー・エル・エル・シー Image transfer device
US7697128B2 (en) 2007-03-23 2010-04-13 Asml Netherlands B.V. Method of imaging radiation from an object on a detection device and an inspection device for inspecting an object
JP2009014510A (en) * 2007-07-04 2009-01-22 Hitachi High-Technologies Corp Inspection method and inspection apparatus
US7570354B1 (en) * 2007-09-06 2009-08-04 Kla-Tencor Corporation Image intensification for low light inspection
JP5317468B2 (en) * 2007-12-19 2013-10-16 株式会社日立ハイテクノロジーズ Defect inspection equipment
US7653097B2 (en) * 2007-12-31 2010-01-26 Corning Incorporated Systems and methods for polarization modulation of an optical signal
US7738092B1 (en) 2008-01-08 2010-06-15 Kla-Tencor Corporation System and method for reducing speckle noise in die-to-die inspection systems
US20110175997A1 (en) * 2008-01-23 2011-07-21 Cyberoptics Corporation High speed optical inspection system with multiple illumination imagery
US7970028B2 (en) * 2008-01-30 2011-06-28 Corning Incorporated System and methods for speckle reduction
US8285025B2 (en) * 2008-03-25 2012-10-09 Electro Scientific Industries, Inc. Method and apparatus for detecting defects using structured light
US8494802B2 (en) * 2008-06-19 2013-07-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer
US7843558B2 (en) * 2008-06-25 2010-11-30 Applied Materials South East Asia Pte. Ltd. Optical inspection tools featuring light shaping diffusers
JP5878373B2 (en) * 2008-12-01 2016-03-08 リアルディー インコーポレイテッドRealD Inc. Stereoscopic projection system using spatial multiplexing on intermediate image plane
DE102009000528B4 (en) * 2009-01-30 2011-04-07 Nanophotonics Ag Inspection device and method for the optical examination of object surfaces, in particular of wafer surfaces
KR101038206B1 (en) * 2009-02-09 2011-05-31 한국과학기술원 Variable field optics using telecentric scanner and two wedge prisms
DE102009044151B4 (en) * 2009-05-19 2012-03-29 Kla-Tencor Mie Gmbh Device for optical wafer inspection
JP5331586B2 (en) 2009-06-18 2013-10-30 株式会社日立ハイテクノロジーズ Defect inspection apparatus and inspection method
DE102010027647A1 (en) * 2009-07-17 2011-01-20 Continental Engineering Services Gmbh Laser-based method for friction coefficient classification in motor vehicles
WO2011011291A1 (en) 2009-07-22 2011-01-27 Kla-Tencor Corporation Dark field inspection system with ring illumination
US9068952B2 (en) * 2009-09-02 2015-06-30 Kla-Tencor Corporation Method and apparatus for producing and measuring dynamically focussed, steered, and shaped oblique laser illumination for spinning wafer inspection system
US8681211B2 (en) * 2009-09-22 2014-03-25 Cyberoptics Corporation High speed optical inspection system with adaptive focusing
US8894259B2 (en) * 2009-09-22 2014-11-25 Cyberoptics Corporation Dark field illuminator with large working area
US8670031B2 (en) * 2009-09-22 2014-03-11 Cyberoptics Corporation High speed optical inspection system with camera array and compact, integrated illuminator
US8872912B2 (en) * 2009-09-22 2014-10-28 Cyberoptics Corporation High speed distributed optical sensor inspection system
US8388204B2 (en) * 2009-09-22 2013-03-05 Cyberoptics Corporation High speed, high resolution, three dimensional solar cell inspection system
JP5417268B2 (en) * 2010-06-28 2014-02-12 富士フイルム株式会社 Endoscope system
US9406115B2 (en) 2010-07-03 2016-08-02 Rudolph Technologies, Inc. Scratch detection method and apparatus
EP3650162B1 (en) 2010-09-21 2021-10-27 Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Laser micro/nano fabricating system and method of processing a metal ion solution
US8358417B2 (en) * 2010-10-21 2013-01-22 Spectrasensors, Inc. Spectrometer with validation cell
US8573785B2 (en) 2010-11-23 2013-11-05 Corning Incorporated Wavelength-switched optical systems
TWI440114B (en) * 2010-11-30 2014-06-01 King Yuan Electronics Co Ltd Wafer inspection system
CN102486521B (en) * 2010-12-02 2014-04-02 京元电子股份有限公司 Wafer detection system
US20120307349A1 (en) * 2010-12-07 2012-12-06 Laser Light Engines Speckle Reduction Using Multiple Starting Wavelengths
JP2012127682A (en) 2010-12-13 2012-07-05 Hitachi High-Technologies Corp Defect inspection method and device therefor
SG10201510329VA (en) 2010-12-16 2016-01-28 Kla Tencor Corp Wafer inspection
US9409255B1 (en) 2011-01-04 2016-08-09 Nlight, Inc. High power laser imaging systems
US10095016B2 (en) 2011-01-04 2018-10-09 Nlight, Inc. High power laser system
US9429742B1 (en) 2011-01-04 2016-08-30 Nlight, Inc. High power laser imaging systems
JP5847841B2 (en) * 2011-01-06 2016-01-27 アプライド マテリアルズ イスラエル リミテッド Method and system for coherence reduction
JP2012185149A (en) * 2011-02-17 2012-09-27 Ricoh Co Ltd Defect inspection device and defect inspection processing method
CN102122081B (en) * 2011-03-27 2013-03-20 山东大学 Dodging shaping and facula-dispersing device for laser beam
WO2012138344A1 (en) * 2011-04-07 2012-10-11 Applied Materials Israel, Ltd. Inspection method and an inspection system exhibiting speckle reduction characteristics
GB2494733A (en) * 2011-09-14 2013-03-20 Malvern Instr Ltd Measuring particle size distribution by light scattering
US9720244B1 (en) 2011-09-30 2017-08-01 Nlight, Inc. Intensity distribution management system and method in pixel imaging
US9402036B2 (en) * 2011-10-17 2016-07-26 Rudolph Technologies, Inc. Scanning operation with concurrent focus and inspection
US9046697B2 (en) 2012-01-02 2015-06-02 Jgm Associates, Inc. Low-speckle light sources and displays employing multimode optical fiber
JP5865738B2 (en) 2012-03-13 2016-02-17 株式会社日立ハイテクノロジーズ Defect inspection method and apparatus
CN104136961B (en) * 2012-03-27 2017-06-20 恩耐有限公司 High power laser system
WO2013152509A1 (en) * 2012-04-14 2013-10-17 中国科学技术大学 Method for implementing super-resolution imaging of microscope system
CN103377746B (en) * 2012-04-14 2015-12-02 中国科学技术大学 Method for realizing super-resolution imaging of microscope system
US8772731B2 (en) * 2012-04-15 2014-07-08 Kla-Tencor Corporation Apparatus and method for synchronizing sample stage motion with a time delay integration charge-couple device in a semiconductor inspection tool
EP2850595B1 (en) * 2012-05-14 2016-04-06 Koninklijke Philips N.V. Dark field computed tomography imaging
US20130313440A1 (en) * 2012-05-22 2013-11-28 Kla-Tencor Corporation Solid-State Laser And Inspection System Using 193nm Laser
US8896827B2 (en) * 2012-06-26 2014-11-25 Kla-Tencor Corporation Diode laser based broad band light sources for wafer inspection tools
CN102854196B (en) * 2012-09-24 2014-06-25 江苏物联网研究发展中心 Wafer-level automatic test system for MEMS (Micro-electromechanical Systems) structure defects and test method of MEMS structure defects
CN103728314B (en) * 2012-10-16 2017-01-04 希捷科技有限公司 The method distinguishing grown surface feature and foreign surface feature
US9377394B2 (en) 2012-10-16 2016-06-28 Seagate Technology Llc Distinguishing foreign surface features from native surface features
US8860937B1 (en) * 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
TWI489090B (en) 2012-10-31 2015-06-21 Pixart Imaging Inc Detection system
CN103808305B (en) * 2012-11-07 2017-11-07 原相科技股份有限公司 Detection system
US8912495B2 (en) 2012-11-21 2014-12-16 Kla-Tencor Corp. Multi-spectral defect inspection for 3D wafers
US9310248B2 (en) 2013-03-14 2016-04-12 Nlight, Inc. Active monitoring of multi-laser systems
US9214786B2 (en) 2013-04-09 2015-12-15 Nlight Photonics Corporation Diode laser packages with flared laser oscillator waveguides
US9166369B2 (en) 2013-04-09 2015-10-20 Nlight Photonics Corporation Flared laser oscillator waveguide
WO2014188457A1 (en) * 2013-05-23 2014-11-27 Centro Sviluppo Materiali S.P.A. Method for the surface inspection of long products and apparatus suitable for carrying out such a method
US9274064B2 (en) * 2013-05-30 2016-03-01 Seagate Technology Llc Surface feature manager
US9513215B2 (en) 2013-05-30 2016-12-06 Seagate Technology Llc Surface features by azimuthal angle
US9255887B2 (en) 2013-06-19 2016-02-09 Kla-Tencor Corporation 2D programmable aperture mechanism
US9852519B2 (en) 2013-06-25 2017-12-26 Pixart Imaging Inc. Detection system
US9747670B2 (en) 2013-06-26 2017-08-29 Kla-Tencor Corporation Method and system for improving wafer surface inspection sensitivity
JP6069133B2 (en) * 2013-08-30 2017-02-01 株式会社日立ハイテクノロジーズ Defect inspection apparatus and defect inspection method
KR102099722B1 (en) 2014-02-05 2020-05-18 엔라이트 인크. Single-emitter line beam system
US9435964B2 (en) 2014-02-26 2016-09-06 TeraDiode, Inc. Systems and methods for laser systems with variable beam parameter product
US10914902B2 (en) 2014-02-26 2021-02-09 TeraDiode, Inc. Methods for altering properties of a radiation beam
US9506873B2 (en) 2014-04-15 2016-11-29 Kla-Tencor Corp. Pattern suppression in logic for wafer inspection
WO2015200271A1 (en) * 2014-06-25 2015-12-30 TeraDiode, Inc. Systems and methods for laser systems with variable beam parameter product
JP6408817B2 (en) * 2014-07-22 2018-10-17 オリンパス株式会社 Image processing apparatus, image processing method, image processing program, and imaging system
KR20160013695A (en) 2014-07-28 2016-02-05 삼성전자주식회사 Apparatus and method for inspection of substrate defect
BR112017002707B1 (en) * 2014-08-13 2022-08-09 Ipg Photonics Corporation MULTI-BEAM OUTPUT FIBER LASER SYSTEM AND METHOD OF PROVIDING A DYNAMICALLY CHANGEABLE MULTI-BEAM LASER BEAM
US9766186B2 (en) * 2014-08-27 2017-09-19 Kla-Tencor Corp. Array mode repeater detection
US10186836B2 (en) 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
SG10202110739PA (en) 2014-12-05 2021-11-29 Kla Tencor Corp Apparatus, method and computer program product for defect detection in work pieces
EP3238135B1 (en) * 2014-12-22 2020-02-05 California Institute Of Technology Epi-illumination fourier ptychographic imaging for thick samples
JP6528308B2 (en) * 2015-02-05 2019-06-12 国立大学法人神戸大学 Shape evaluation method and shape evaluation apparatus
CN104967759B (en) * 2015-02-13 2016-05-04 华中科技大学 A kind of scanning imaging system for low light level signal
US9841512B2 (en) * 2015-05-14 2017-12-12 Kla-Tencor Corporation System and method for reducing radiation-induced false counts in an inspection system
US10270224B2 (en) 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
EP3144887A1 (en) * 2015-09-17 2017-03-22 Thomson Licensing A method and an apparatus for generating data representative of a pixel beam
EP3144888A1 (en) * 2015-09-17 2017-03-22 Thomson Licensing An apparatus and a method for generating data representing a pixel beam
JP6723633B2 (en) * 2015-12-10 2020-07-15 株式会社ディスコ Inspection equipment
WO2017149689A1 (en) * 2016-03-02 2017-09-08 株式会社日立ハイテクノロジーズ Defect inspection device, pattern chip, and defect inspection method
JP2017198612A (en) * 2016-04-28 2017-11-02 キヤノン株式会社 Inspection device, inspection system, and method for manufacturing article
EP3296723A1 (en) 2016-09-14 2018-03-21 ASML Netherlands B.V. Illumination source for an inspection apparatus, inspection apparatus and inspection method
CN110178045B (en) * 2016-11-17 2023-05-30 特里纳米克斯股份有限公司 Detector for optically detecting at least one object
CN106645197B (en) * 2016-12-29 2024-01-30 中国工程物理研究院激光聚变研究中心 Online detection system for detecting particles on surface of precision optical element and application method
CN106707492B (en) * 2017-01-13 2019-07-26 清华大学 Collection terminal frequency domain based on spatial light modulator pieces microscopic system together
US10481101B2 (en) * 2017-01-23 2019-11-19 Applied Materials Israel Ltd. Asymmetrical magnification inspection system and illumination module
NL2018852B1 (en) 2017-05-05 2018-11-14 Illumina Inc Optical distortion correction for imaged samples
CN107121161B (en) * 2017-04-18 2019-06-04 北京佳百瑞科技有限责任公司 More imaging unit vision detection systems based on controllable polarization
CN106990119A (en) * 2017-04-27 2017-07-28 中科慧远视觉技术(洛阳)有限公司 The vision detection system and detection method of a kind of white glass surface defect of automatic detection
JP6876576B2 (en) * 2017-08-17 2021-05-26 日本電子株式会社 3D image construction method
EP3625602A4 (en) 2017-09-29 2021-02-24 Leica Biosystems Imaging, Inc. REAL-TIME AUTOMATIC FOCUS ALGORITHM
CA3075288C (en) 2017-09-29 2022-08-30 Leica Biosystems Imaging, Inc. Real-time autofocus scanning
EP3701245A4 (en) * 2017-10-26 2021-08-11 Particle Measuring Systems, Inc. SYSTEM AND METHOD FOR PARTICLE MEASUREMENT
CN107727655B (en) * 2017-11-24 2024-06-18 苏州精濑光电有限公司 Quick optical correction device
US11087451B2 (en) * 2017-12-19 2021-08-10 Texas Instruments Incorporated Generating multi-focal defect maps using optical tools
JP6818702B2 (en) * 2018-01-15 2021-01-20 株式会社東芝 Optical inspection equipment and optical inspection method
US20190355110A1 (en) * 2018-05-15 2019-11-21 Camtek Ltd. Cross talk reduction
US20190369307A1 (en) * 2018-05-30 2019-12-05 Key Technology, Inc. Electromagnetic Radiation Detector Assembly
EP3581091A1 (en) * 2018-06-12 2019-12-18 Koninklijke Philips N.V. System and method for determining at least one vital sign of a subject
US10408767B1 (en) * 2018-06-13 2019-09-10 Hatch Ltd. System and method for detecting imperfections in a reflective surface
US10877382B2 (en) * 2018-08-14 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for handling mask and lithography apparatus
CN110849900A (en) * 2018-08-21 2020-02-28 深圳中科飞测科技有限公司 Wafer defect detection system and method
CN109239078A (en) * 2018-09-12 2019-01-18 苏州工业园区纳米产业技术研究院有限公司微纳制造分公司 A kind of wafer defect detection device
JP7158224B2 (en) * 2018-09-26 2022-10-21 浜松ホトニクス株式会社 Semiconductor device inspection method and semiconductor device inspection apparatus
WO2020074250A1 (en) * 2018-10-12 2020-04-16 Asml Netherlands B.V. Detection system for an alignment sensor
CN111198192B (en) * 2018-11-20 2022-02-15 深圳中科飞测科技股份有限公司 Detection device and detection method
TWI724370B (en) * 2019-02-01 2021-04-11 由田新技股份有限公司 An automatic optical inspection system, and method for measuring a hole structure
CN111638226B (en) * 2019-02-14 2021-08-31 深圳中科飞测科技股份有限公司 Detection method, image processor and detection system
CN109916902A (en) * 2019-03-12 2019-06-21 中国工程物理研究院激光聚变研究中心 Imaging device and imaging method
CN109932826B (en) * 2019-04-29 2023-10-31 中国工程物理研究院激光聚变研究中心 A spliced strip laser device for defect detection of optical components
US11162897B2 (en) * 2019-05-15 2021-11-02 Onto Innovation Inc. Optical metrology device using numerical aperture reduction
CN110208284B (en) * 2019-05-27 2021-09-17 武汉中导光电设备有限公司 Method and system for multi-channel defect merging analysis
JP2020204579A (en) * 2019-06-18 2020-12-24 住友電工デバイス・イノベーション株式会社 Wafer surface inspection method, surface inspection device, and method for manufacturing electronic component
DE102019209213A1 (en) * 2019-06-26 2020-12-31 Q.ant GmbH Sensor arrangement for characterization of particles
CN110426397B (en) * 2019-08-14 2022-03-25 深圳市麓邦技术有限公司 Optical detection system, device and method
CN112581512A (en) * 2019-09-27 2021-03-30 鲁班嫡系机器人(深圳)有限公司 Image matching, 3D imaging and posture recognition method, device and system
CN110779694B (en) * 2019-11-11 2021-02-19 四川大学 Method for measuring refractive index by irradiating double prism facets
WO2021096865A2 (en) * 2019-11-12 2021-05-20 Applied Materials, Inc. Systems and methods for controlling non-uniformity
US11343435B2 (en) 2019-12-26 2022-05-24 Waymo Llc Microlensing for real-time sensing of stray light
EP4176228B1 (en) 2020-07-03 2025-08-13 Scuola universitaria professionale della Svizzera italiana (SUPSI) 3d image acquisition system for optical inspection and method for optical inspection of objects, in particular electronic assemblies, electronic boards and the like
CN112180579B (en) * 2020-09-11 2021-11-16 中国科学院西安光学精密机械研究所 Microscopic imaging assembly, device, system and imaging method using array objective lens
TWI779357B (en) * 2020-09-23 2022-10-01 南亞科技股份有限公司 Method of detecting a surface defect on an object and system thereof
US11899375B2 (en) * 2020-11-20 2024-02-13 Kla Corporation Massive overlay metrology sampling with multiple measurement columns
CN112630128B (en) * 2020-12-21 2023-11-10 深圳中科飞测科技股份有限公司 Illumination system and scanning device
KR102470065B1 (en) * 2020-12-22 2022-11-23 (주) 엘티아이에스 Particle measuring device
CN114666455A (en) * 2020-12-23 2022-06-24 Oppo广东移动通信有限公司 Shooting control method and device, storage medium and electronic device
CN112908126B (en) * 2021-01-21 2022-07-08 潍坊学院 Lens imaging experimental device with focusing state digital display
CN115248531A (en) * 2021-04-26 2022-10-28 上海微电子装备(集团)股份有限公司 Particle size detection device and detection method thereof, and lithography machine
CN113418932B (en) * 2021-06-30 2023-08-04 天津大学 Device and method for non-destructive testing of semiconductor wafers
JP7566703B2 (en) * 2021-08-24 2024-10-15 株式会社東芝 OPTICAL INSPECTION METHOD, OPTICAL INSPECTION PROGRAM, AND OPTICAL INSPECTION APPARATUS
JP2023038765A (en) * 2021-09-07 2023-03-17 株式会社東芝 Inspection method, inspection device, inspection system, program, and storage medium
FR3127296B1 (en) * 2021-09-17 2024-02-02 Safran Electronics & Defense Imaging device with modular design and remote infrared sensor
CN113768472B (en) * 2021-11-10 2022-03-22 华中科技大学 A three-dimensional image acquisition device and method with fluorescent markers
NL1044332B1 (en) * 2022-05-17 2023-11-24 Felixsonip B V Method for improved scanning of a photographic emulsion
KR20240084706A (en) * 2022-12-07 2024-06-14 (주)넥스틴 Dark-field inspection device with real time variable function
CN115930850B (en) * 2023-02-06 2023-05-30 宜科(天津)电子有限公司 Data processing system for detecting surface roughness of object
CN119986931A (en) * 2023-11-10 2025-05-13 致茂电子(苏州)有限公司 Optimal diffuser position adjustment method for Kohler illumination system
US20260009969A1 (en) * 2024-07-02 2026-01-08 Applied Materials Israel Ltd. Auto focus using multiple location illumination

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5161008A (en) * 1989-11-06 1992-11-03 Proxitronic Funk Gmbh & Co. Kg Optoelectronic image sensor for color cameras
US5739542A (en) * 1993-03-25 1998-04-14 Seiko Instruments Inc. X-ray analyzing
US5933473A (en) * 1996-04-04 1999-08-03 Hitachi, Ltd. Non-destructive inspection apparatus and inspection system using it
US6313465B1 (en) * 1998-03-25 2001-11-06 Kabushiki Kaisha Toshiba Radiation discriminative measuring apparatus and radiation discriminative measuring method
US6646272B2 (en) * 1996-07-10 2003-11-11 Packard Instrument Company, Inc. Fiber optic coupling device for detecting luminescent samples
US7015452B2 (en) * 2001-10-09 2006-03-21 Itt Manufacturing Enterprises, Inc. Intensified hybrid solid-state sensor

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3628080A (en) * 1969-08-08 1971-12-14 Westinghouse Electric Corp Fiber optic output faceplate assembly system
NL7309383A (en) * 1973-07-05 1975-01-07 Philips Nv COUPLING OF TWO OPTICAL WINDOWS.
JPS6114009Y2 (en) * 1980-12-18 1986-05-01
DE3232885A1 (en) * 1982-09-04 1984-03-08 Robert Bosch Gmbh, 7000 Stuttgart METHOD FOR AUTOMATICALLY INSPECTING SURFACES
US4619508A (en) * 1984-04-28 1986-10-28 Nippon Kogaku K. K. Illumination optical arrangement
JPH079368B2 (en) * 1986-04-07 1995-02-01 株式会社日立製作所 Circuit board inspection device
JPS62293718A (en) * 1986-06-13 1987-12-21 Canon Inc Exposure device
EP0286393B1 (en) * 1987-04-10 1992-11-19 British Aerospace Public Limited Company Imaging system
JP2838797B2 (en) * 1987-04-13 1998-12-16 株式会社ニコン Projection optical device
JP2512059B2 (en) * 1988-02-26 1996-07-03 株式会社日立製作所 Foreign object detection method and apparatus
JPH0235447A (en) 1988-07-26 1990-02-06 Fuji Photo Film Co Ltd Method for forming fixation type optical image forming sheet
JP2693791B2 (en) * 1988-10-25 1997-12-24 三菱電機株式会社 Defect inspection equipment
JP3204406B2 (en) * 1991-10-30 2001-09-04 株式会社ニコン Surface position detection method and apparatus, semiconductor exposure apparatus, and exposure method using the method
US5264912A (en) * 1992-02-07 1993-11-23 Tencor Instruments Speckle reduction track filter apparatus for optical inspection of patterned substrates
US5228101A (en) 1992-03-02 1993-07-13 Motorola, Inc. Electrical to optical links using metalization
JP2987007B2 (en) * 1992-05-28 1999-12-06 日立電子エンジニアリング株式会社 Foreign matter detection optical system of color filter
US5313479A (en) * 1992-07-29 1994-05-17 Texas Instruments Incorporated Speckle-free display system using coherent light
CN2138294Y (en) * 1992-09-19 1993-07-14 杨锡庚 Laser instant infrared temperature meter
CN1025642C (en) * 1992-11-02 1994-08-10 中国大恒公司 Photoelectric fingerprint reader
US5420954A (en) 1993-05-24 1995-05-30 Photonics Research Incorporated Parallel optical interconnect
US5359447A (en) 1993-06-25 1994-10-25 Hewlett-Packard Company Optical communication with vertical-cavity surface-emitting laser operating in multiple transverse modes
JPH07104192A (en) * 1993-10-07 1995-04-21 Olympus Optical Co Ltd Tv observation device for microscope
JP3271425B2 (en) * 1994-03-30 2002-04-02 ソニー株式会社 Foreign matter inspection device and foreign matter inspection method
US5526458A (en) * 1994-05-27 1996-06-11 Eastman Kodak Company Vision system with fiber optic plate to detilt oblique images
US5673144A (en) * 1994-09-14 1997-09-30 International Business Machines, Corporation Oblique viewing microscope system
DE4434699C2 (en) * 1994-09-28 2001-02-22 Fraunhofer Ges Forschung Arrangement for checking transparent or reflective objects
JP3744966B2 (en) * 1994-10-07 2006-02-15 株式会社ルネサステクノロジ Manufacturing method of semiconductor substrate
JPH08152430A (en) * 1994-11-29 1996-06-11 Seiko Instr Inc Microscope with alignment function
US5633747A (en) * 1994-12-21 1997-05-27 Tencor Instruments Variable spot-size scanning apparatus
US5500770A (en) * 1994-12-30 1996-03-19 Amarel Precision Instruments Macrolens system for emission microscopy
US6118525A (en) * 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US5903342A (en) * 1995-04-10 1999-05-11 Hitachi Electronics Engineering, Co., Ltd. Inspection method and device of wafer surface
WO1996039619A1 (en) * 1995-06-06 1996-12-12 Kla Instruments Corporation Optical inspection of a specimen using multi-channel responses from the specimen
US5729374A (en) * 1995-07-03 1998-03-17 The Regents Of The University Of California Speckle averaging system for laser raster-scan image projection
JP2820103B2 (en) * 1996-01-31 1998-11-05 日本電気株式会社 Injection-locked laser device
FR2744764B1 (en) * 1996-02-12 1998-04-17 Inst Francais Du Petrole TWO STROKE MOTOR WITH A MEANS OF CONTROL OF THE MOVEMENT OF THE VALVE
JPH09305094A (en) * 1996-05-10 1997-11-28 Komatsu Ltd Telecentric optical device
AU3376597A (en) * 1996-06-04 1998-01-05 Tencor Instruments Optical scanning system for surface inspection
JPH10141932A (en) * 1996-11-07 1998-05-29 Fujitsu Ltd Pattern inspection method and device
US5801824A (en) * 1996-11-25 1998-09-01 Photon Dynamics, Inc. Large area defect monitor tool for manufacture of clean surfaces
US5774224A (en) * 1997-01-24 1998-06-30 International Business Machines Corporation Linear-scanning, oblique-viewing optical apparatus
WO1998044330A2 (en) * 1997-03-31 1998-10-08 Microtherm, Llc Optical inspection module and method for detecting particles and defects on substrates in integrated process tools
JPH10335240A (en) * 1997-05-30 1998-12-18 Nikon Corp Surface position detector
JPH1164234A (en) * 1997-08-20 1999-03-05 Advantest Corp Method and device for detecting foreign matter
US6201601B1 (en) * 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
US6956644B2 (en) * 1997-09-19 2005-10-18 Kla-Tencor Technologies Corporation Systems and methods for a wafer inspection system using multiple angles and multiple wavelength illumination
US6104481A (en) * 1997-11-11 2000-08-15 Kabushiki Kaisha Topcon Surface inspection apparatus
US6304373B1 (en) * 1998-03-09 2001-10-16 Lucid, Inc. Imaging system using multi-mode laser illumination to enhance image quality
JPH11223795A (en) * 1998-02-06 1999-08-17 Sony Corp Light coherence reduction method and device, illumination method and device, and bundle fiber
JP3385994B2 (en) * 1998-02-27 2003-03-10 株式会社ニコン Image detector
JPH11326826A (en) * 1998-05-13 1999-11-26 Sony Corp Lighting method and lighting device
JPH11326653A (en) * 1998-05-15 1999-11-26 Sony Corp Light coherence reduction method and device, illumination method and device, and optical fiber bundle
US6256093B1 (en) * 1998-06-25 2001-07-03 Applied Materials, Inc. On-the-fly automatic defect classification for substrates using signal attributes
US6137570A (en) * 1998-06-30 2000-10-24 Kla-Tencor Corporation System and method for analyzing topological features on a surface
US6987873B1 (en) * 1998-07-08 2006-01-17 Applied Materials, Inc. Automatic defect classification with invariant core classes
JP4426026B2 (en) * 1998-08-07 2010-03-03 シスメックス株式会社 Multi-light source unit and optical system using the same
US6122046A (en) * 1998-10-02 2000-09-19 Applied Materials, Inc. Dual resolution combined laser spot scanning and area imaging inspection
JP4304548B2 (en) * 1998-12-01 2009-07-29 株式会社ニコン Microscope equipment
US6621570B1 (en) * 1999-03-04 2003-09-16 Inspex Incorporated Method and apparatus for inspecting a patterned semiconductor wafer
US6091488A (en) * 1999-03-22 2000-07-18 Beltronics, Inc. Method of and apparatus for automatic high-speed optical inspection of semi-conductor structures and the like through fluorescent photoresist inspection
JP4258058B2 (en) * 1999-03-23 2009-04-30 ソニー株式会社 Inspection apparatus and inspection method for disk-shaped recording medium
JP4455771B2 (en) * 1999-04-12 2010-04-21 ドイッチェ テレコム アーゲー Method and apparatus for reducing speckle formation on a projection screen
US6370219B1 (en) 1999-04-20 2002-04-09 Lucent Technologies Inc. Self-modulated, filament-based, solid state laser
US6853446B1 (en) 1999-08-16 2005-02-08 Applied Materials, Inc. Variable angle illumination wafer inspection system
JP2000136910A (en) * 1999-11-01 2000-05-16 Olympus Optical Co Ltd Board inspection apparatus
US6369888B1 (en) * 1999-11-17 2002-04-09 Applied Materials, Inc. Method and apparatus for article inspection including speckle reduction
US6956878B1 (en) * 2000-02-07 2005-10-18 Silicon Light Machines Corporation Method and apparatus for reducing laser speckle using polarization averaging
JP4604300B2 (en) * 2000-02-09 2011-01-05 株式会社ニコン microscope
JP2001250760A (en) * 2000-03-06 2001-09-14 Nikon Corp Aberration measurement method, mark detection method using the method, and exposure method
JP3996728B2 (en) * 2000-03-08 2007-10-24 株式会社日立製作所 Surface inspection apparatus and method
WO2001071323A1 (en) * 2000-03-24 2001-09-27 Olympus Optical Co., Ltd. Apparatus for detecting defect
JP3858571B2 (en) * 2000-07-27 2006-12-13 株式会社日立製作所 Pattern defect inspection method and apparatus
US7136159B2 (en) * 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Excimer laser inspection system
US6323984B1 (en) * 2000-10-11 2001-11-27 Silicon Light Machines Method and apparatus for reducing laser speckle
US6693930B1 (en) * 2000-12-12 2004-02-17 Kla-Tencor Technologies Corporation Peak power and speckle contrast reduction for a single laser pulse
US6522437B2 (en) * 2001-02-15 2003-02-18 Harris Corporation Agile multi-beam free-space optical communication apparatus
US6625381B2 (en) * 2001-02-20 2003-09-23 Eastman Kodak Company Speckle suppressed laser projection system with partial beam reflection
US6445487B1 (en) * 2001-02-20 2002-09-03 Eastman Kodak Company Speckle suppressed laser projection system using a multi-wavelength doppler shifted beam
JP3271622B2 (en) * 2001-03-12 2002-04-02 株式会社日立製作所 Method for manufacturing semiconductor device
RU2214058C2 (en) * 2001-04-25 2003-10-10 Общество с ограниченной ответственностью "Подсолнечник Технологии" Method for generating light beams for open optical communication systems
US6747781B2 (en) * 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6778267B2 (en) * 2001-09-24 2004-08-17 Kla-Tencor Technologies Corp. Systems and methods for forming an image of a specimen at an oblique viewing angle
US6895149B1 (en) * 2002-05-13 2005-05-17 James Jeffery Jacob Apparatus for beam homogenization and speckle reduction
US7116413B2 (en) * 2002-09-13 2006-10-03 Kla-Tencor Corporation Inspection system for integrated applications
CN1685220B (en) * 2002-09-30 2010-04-28 应用材料以色列股份有限公司 dark field detection system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5161008A (en) * 1989-11-06 1992-11-03 Proxitronic Funk Gmbh & Co. Kg Optoelectronic image sensor for color cameras
US5739542A (en) * 1993-03-25 1998-04-14 Seiko Instruments Inc. X-ray analyzing
US5933473A (en) * 1996-04-04 1999-08-03 Hitachi, Ltd. Non-destructive inspection apparatus and inspection system using it
US6646272B2 (en) * 1996-07-10 2003-11-11 Packard Instrument Company, Inc. Fiber optic coupling device for detecting luminescent samples
US6313465B1 (en) * 1998-03-25 2001-11-06 Kabushiki Kaisha Toshiba Radiation discriminative measuring apparatus and radiation discriminative measuring method
US7015452B2 (en) * 2001-10-09 2006-03-21 Itt Manufacturing Enterprises, Inc. Intensified hybrid solid-state sensor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080297783A1 (en) * 2007-04-25 2008-12-04 Yuta Urano Defect inspection system and method of the same
US8274652B2 (en) * 2007-04-25 2012-09-25 Hitachi High-Technologies Corporation Defect inspection system and method of the same
US20150369753A1 (en) * 2011-07-12 2015-12-24 Kla-Tencor Corporation Wafer Inspection
US9915622B2 (en) * 2011-07-12 2018-03-13 Kla-Tencor Corp. Wafer inspection
US9110034B1 (en) * 2013-09-16 2015-08-18 L-3 Communications Corp. Night vision device test apparatus
WO2018127757A1 (en) * 2017-01-05 2018-07-12 Illumina, Inc. Modular optical analytic systems and methods
US10732122B2 (en) 2017-01-05 2020-08-04 Illumina, Inc. Modular optical analytic systems and methods
US11408828B2 (en) 2017-01-05 2022-08-09 Illumina, Inc. Modular optical analytic systems and methods
US12044626B2 (en) 2017-01-05 2024-07-23 Illumina, Inc. Modular optical analytic systems and methods
JP2021056146A (en) * 2019-09-30 2021-04-08 国立大学法人 奈良先端科学技術大学院大学 Plant sensing device and real-time plant monitoring system
JP7424607B2 (en) 2019-09-30 2024-01-30 国立大学法人 奈良先端科学技術大学院大学 Plant sensing device and real-time plant monitoring system

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