US20070151416A1 - Thermal interface material and semiconductor device incorporating the same - Google Patents
Thermal interface material and semiconductor device incorporating the same Download PDFInfo
- Publication number
- US20070151416A1 US20070151416A1 US11/309,463 US30946306A US2007151416A1 US 20070151416 A1 US20070151416 A1 US 20070151416A1 US 30946306 A US30946306 A US 30946306A US 2007151416 A1 US2007151416 A1 US 2007151416A1
- Authority
- US
- United States
- Prior art keywords
- thermal interface
- interface material
- groups
- heat
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- UPWOTATYTJQYSI-UHFFFAOYSA-N C.C.C=C[Si](C)(O[Si](C)(C)C)O[Si](C)(C)C Chemical compound C.C.C=C[Si](C)(O[Si](C)(C)C)O[Si](C)(C)C UPWOTATYTJQYSI-UHFFFAOYSA-N 0.000 description 2
- CNADZBRHWQJAHI-UHFFFAOYSA-N C.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CC(C)C(=O)OCCC[SiH2]C)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCC2CCC3OC3C2)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCCOCC2CO2)O[Si]([H])(C)O1 Chemical compound C.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CC(C)C(=O)OCCC[SiH2]C)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCC2CCC3OC3C2)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCCOCC2CO2)O[Si]([H])(C)O1 CNADZBRHWQJAHI-UHFFFAOYSA-N 0.000 description 2
- LPHSKPJDAPUFHG-UHFFFAOYSA-N C.C#[SiH].C#[Si]C=C.C#[Si]CC[SiH3].[Pt] Chemical compound C.C#[SiH].C#[Si]C=C.C#[Si]CC[SiH3].[Pt] LPHSKPJDAPUFHG-UHFFFAOYSA-N 0.000 description 1
- CDKORUOSPOCBCQ-UHFFFAOYSA-N C.COOC.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CC(C)C(=O)OCCC[SiH2]OC)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCC2CCC3OC3C2)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCCOCC2CO2)O[Si]([H])(C)O1 Chemical compound C.COOC.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CC(C)C(=O)OCCC[SiH2]OC)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCC2CCC3OC3C2)O[Si]([H])(C)O1.[H][Si]1(C)O[Si]([H])(C)O[Si](C)(CCCOCC2CO2)O[Si]([H])(C)O1 CDKORUOSPOCBCQ-UHFFFAOYSA-N 0.000 description 1
- JFYVSVZSPWHVHN-UHFFFAOYSA-N [H][Si](C)(O[Si](C)(C)C)O[Si](C)(C)O[Si](C)(C)C Chemical compound [H][Si](C)(O[Si](C)(C)C)O[Si](C)(C)O[Si](C)(C)C JFYVSVZSPWHVHN-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H10W40/251—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- H10W40/70—
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- H10W72/07251—
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- H10W72/20—
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- H10W72/877—
Definitions
- the present invention relates to a thermal interface material which is interposable between a heat-generating electronic component and a heat dissipating component, and it also relates to a semiconductor device using the thermal interface material.
- a heat dissipating apparatus such as a heat sink or a heat spreader is attached to a surface of the electronic component, so that the heat is transferred from the electronic component to ambient air via the heat dissipating apparatus.
- the contact surfaces between the heat dissipating apparatus and the electronic component are rough and therefore are separated from each other by a layer of interstitial air no mater how precisely the heat dissipating apparatus and the electronic component are brought into contact.
- the contact resistance is relatively high.
- a thermal interface material may be applied to the contact surfaces to eliminate the air interstices between the heat dissipating apparatus and the electronic component in order to improve heat dissipation.
- the thermal interface material includes base oil and fillers filled in the base oil.
- the base oil is used for filling the air interstices to create an intimate contact between the heat dissipating apparatus and the electronic component, whilst the fillers are used for improving the thermal conductivity of the thermal interface material to thereby increase the heat dissipation efficiency of the heat dissipating apparatus.
- the base oil may bleed from the thermal interface material when exposed to heat for a long period of time.
- the thermal interface material therefore tends to gradually harden, finally losing flexibility so that it peels off from the contact surfaces between the heat dissipating apparatus and the electronic component. This results in the thermal interface material undesirably increasing its thermal resistance and the heat dissipating apparatus accordingly decreasing its heat dissipation efficiency over time.
- the operational temperatures of the electronic components are undesirably increased, which leads to deterioration in their performance. Therefore, a thermal interface material, which can prevent the base oil from bleeding, is needed.
- the present invention relates, in one respect, to a thermal interface material for electronic products, and in another respect, to a semiconductor device using the thermal interface material.
- the semiconductor device includes a heat source, a heat-dissipating component for dissipating heat generated by the heat source, and a thermal interface material filled in spaces formed between the heat source and the heat-dissipating component.
- the thermal interface material includes 100 parts by weight of an alkenyl groups-containing organopolysiloxane, and a Si—H groups-containing compound selected from the group consisting of organo-hydrogenpolysiloxane and polyorganohydrogensiloxane, and 800 to 1200 parts by weight of fillers consisting of aluminum powder having a mean particle size of 0.1 to 1 um and zinc oxide powder having a mean particle size of 1 to 5 um in a weight ratio from 1/1 to 10/1.
- FIG. 1 is a schematic cross-sectional view of a semiconductor device having a thermal interface material according to a preferred embodiment of the present invention.
- an electronic device 10 includes a heat source 12 disposed on a circuit board 11 , a heat-dissipating component 13 for dissipating heat generated by the heat source 12 , and a thermal interface material 14 filled in spaces formed between the heat source 12 and the heat-dissipating component 13 .
- the heat source 12 is an electronic component, such as a central processing unit (CPU) of a computer, which needs to be cooled.
- the heat-dissipating component 13 is a heat sink, which includes a base 131 and a plurality of fins 133 disposed on the base 131 .
- the heat-dissipating component 13 is attached to the circuit board 11 via a resilient fixing member 15 , which provides a resilient force for clamping the heat dissipation component 13 and the circuit board 11 together.
- the base 131 of the heat-dissipating component 13 is sandwiched between the fixing member 15 and the circuit board 11 , and is urged downwardly towards the heat source 12 on the circuit board 11 via the resilient force exerted thereon.
- the thermal interface material 14 is pressed by the heat-dissipating component 13 thus filled in the spaces formed between the heat source 12 and the heat-dissipating component 13 .
- the thermal interface material 14 is silicone grease composition having high thermal conductivity, and includes a base oil and an amount of fillers filled in the base oil.
- the base oil makes up 100 parts by weight of the thermal interface material 14 .
- the base oil is cured silicone oil including three components: component (A), component (B), and component (C).
- Component (A) of the base oil is an organo-hydrogenpolysiloxane having a chemical structure formula:
- Component (A) contains at least a Si—H group at side chains thereof.
- Component (B) of the base oil is a polyorganohydrogensiloxane having one of the following chemical structure formulas:
- component (B) contains at least three Si-bonded hydrogen atoms therein.
- Component (C) of the base oil is an organopolysiloxane having a chemical structure formula:
- component (C) contains at least two alkenyl groups therein.
- m can also be numbered to satisfy a viscosity of component (C) being in a range from 50 to 5000 cps at 25° C.
- the amount of components (A), (B), and (C) of the base oil is such that the ratio of the number of the alkenyl groups in component (C) to the number of the Si—H groups in component (A), and to the number of the Si-bonded hydrogens in component (B) is 4:1:3.
- Components (A), (B), and (C) of the base oil are used in such proportions that component (C), component (B), and component (A) are heat cured and cross linked together to thereby obtain a composition with a satisfactorily networked structure, giving the thermal interface material a sufficient structure to prevent displacement of the base oil.
- the base oil may include two components, i.e. component (A)/component (B), and component (C).
- the ratio of Si—H groups in component (A)/component (B) to alkenyl groups in component (C) is 1:1, which heat cures and cross links the component (A)/component (B) and component (C) together to thereby obtain compositions with satisfactorily networked structures.
- the reaction formula for the Si—H groups and the alkenyl groups is:
- the fillers are 800 to 1200 parts by weight of the thermal interface material 14 .
- the fillers are a mixture of aluminum powder and zinc oxide powder in a weight ratio of from 1/1 to 10/1.
- the aluminum powder is substantially spherical-shaped and has an average particle size from 1 to 5 um.
- the zinc oxide powder is substantially spherical-shaped and has an average particle size from 0.1 to 1 um.
- the thermal interface material further includes a catalyst selected from among platinum and platinum compounds, which serves to promote addition reaction between alkenyl groups in component (C) and Si—H groups in component (A), and/or Si-bonded hydrogen in component (B).
- a catalyst selected from among platinum and platinum compounds, which serves to promote addition reaction between alkenyl groups in component (C) and Si—H groups in component (A), and/or Si-bonded hydrogen in component (B).
- Exemplary catalysts are elemental platinum, chloroplatinic acid, platinum-olefin complexes, platinum-alcohol complexes, and platinum coordinate compounds.
- An appropriate amount of the catalyst is 0.1 to 500 parts by weight of per million parts of component (C).
- the thermal interface material 14 is used to fill the spaces formed between the heat source 12 and the heat-dissipating component 13 .
- components (A), (B), and (C) cure with the heat produced by the heat source and the catalyst blending thereinto. Once cured, the thermal interface material 14 has a sufficient structure to prevent displacement of the base oil and a long-lasting flexibility to prevent its peeling off from the heat source 12 or the heat-dissipating component 13 . Therefore, the silicone composition ensures a high level of heat dissipation efficiency, improving the overall reliability of the electronic device 10 .
- examples of the substituted hydrocarbon group for methyl attached to a silicon atom include alkyl groups such as ethyl, propyl, isopropyl, butyl, isobutyl, pentyl, neopentyl, hexyl, cyclohexyl, octyl, nonyl, decyl and dodecyl; aryl groups such as phenyl, tolyl, xylyl and naphthyl; aralkyl groups such as benzyl, phenylethyl and 2-phenylpropyl; alkenyl groups such as vinyl, allyl, propenyl, isopropenyl, 1-butenyl, 1-hexenyl, cyclohexenyl and octenyl; and substituted ones of the foregoing groups in which some or all of the hydrogen atoms are substituted with halogen atoms (e.g.
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lubricants (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94144809 | 2005-12-16 | ||
| TW094144809A TWI285675B (en) | 2005-12-16 | 2005-12-16 | Heat conductive grease and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20070151416A1 true US20070151416A1 (en) | 2007-07-05 |
Family
ID=38223012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/309,463 Abandoned US20070151416A1 (en) | 2005-12-16 | 2006-08-10 | Thermal interface material and semiconductor device incorporating the same |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20070151416A1 (zh) |
| TW (1) | TWI285675B (zh) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090057877A1 (en) * | 2007-08-29 | 2009-03-05 | Maxat Touzelbaev | Semiconductor Device with Gel-Type Thermal Interface Material |
| US7833839B1 (en) * | 2007-09-15 | 2010-11-16 | Globalfoundries Inc. | Method for decreasing surface delamination of gel-type thermal interface material by management of the material cure temperature |
| US20110163460A1 (en) * | 2008-09-01 | 2011-07-07 | Dow Corning Toray Co., Ltd. | Thermally Conductive Silicone Composition And Semiconductor Device |
| CN103483372A (zh) * | 2013-09-02 | 2014-01-01 | 上海硅普化学品有限公司 | 3,4-环氧环己基乙基甲基环硅氧烷及其制备方法 |
| JP7735613B1 (ja) * | 2024-12-25 | 2025-09-08 | 株式会社フコク | 熱伝導性硬化性シリコーン組成物、前記組成物を硬化してなる硬化物ないしギャップフィラー、前記組成物を得るための２液型シリコーン組成物セット、及び前記組成物の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021494A (en) * | 1988-10-03 | 1991-06-04 | Toshiba Silicone Co., Ltd | Thermal conductive silicone composition |
| US5239034A (en) * | 1990-08-03 | 1993-08-24 | Shin-Etsu Chemical Co., Ltd. | High-strength silicon rubber compositions |
| US5925709A (en) * | 1996-08-29 | 1999-07-20 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of silicone rubber |
| US6169142B1 (en) * | 1998-06-17 | 2001-01-02 | Shin Etsu Chemical Co., Ltd. | Thermal conductive silicone rubber compositions and method of making |
| US6649258B2 (en) * | 2001-05-01 | 2003-11-18 | Shin-Etsu Chemical Co., Ltd. | Heat conductive silicone composition and semiconductor device |
-
2005
- 2005-12-16 TW TW094144809A patent/TWI285675B/zh active
-
2006
- 2006-08-10 US US11/309,463 patent/US20070151416A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021494A (en) * | 1988-10-03 | 1991-06-04 | Toshiba Silicone Co., Ltd | Thermal conductive silicone composition |
| US5239034A (en) * | 1990-08-03 | 1993-08-24 | Shin-Etsu Chemical Co., Ltd. | High-strength silicon rubber compositions |
| US5925709A (en) * | 1996-08-29 | 1999-07-20 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of silicone rubber |
| US6169142B1 (en) * | 1998-06-17 | 2001-01-02 | Shin Etsu Chemical Co., Ltd. | Thermal conductive silicone rubber compositions and method of making |
| US6649258B2 (en) * | 2001-05-01 | 2003-11-18 | Shin-Etsu Chemical Co., Ltd. | Heat conductive silicone composition and semiconductor device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090057877A1 (en) * | 2007-08-29 | 2009-03-05 | Maxat Touzelbaev | Semiconductor Device with Gel-Type Thermal Interface Material |
| US7678615B2 (en) * | 2007-08-29 | 2010-03-16 | Advanced Micro Devices, Inc. | Semiconductor device with gel-type thermal interface material |
| US7833839B1 (en) * | 2007-09-15 | 2010-11-16 | Globalfoundries Inc. | Method for decreasing surface delamination of gel-type thermal interface material by management of the material cure temperature |
| US20110163460A1 (en) * | 2008-09-01 | 2011-07-07 | Dow Corning Toray Co., Ltd. | Thermally Conductive Silicone Composition And Semiconductor Device |
| CN103483372A (zh) * | 2013-09-02 | 2014-01-01 | 上海硅普化学品有限公司 | 3,4-环氧环己基乙基甲基环硅氧烷及其制备方法 |
| JP7735613B1 (ja) * | 2024-12-25 | 2025-09-08 | 株式会社フコク | 熱伝導性硬化性シリコーン組成物、前記組成物を硬化してなる硬化物ないしギャップフィラー、前記組成物を得るための２液型シリコーン組成物セット、及び前記組成物の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200724661A (en) | 2007-07-01 |
| TWI285675B (en) | 2007-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: FOXCONN TECHNOLOGY CO., LTD., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHENG, CHING-TAI;CHENG, NIEN-TIEN;REEL/FRAME:018089/0283 Effective date: 20060801 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |