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US20020140084A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US20020140084A1
US20020140084A1 US10/115,524 US11552402A US2002140084A1 US 20020140084 A1 US20020140084 A1 US 20020140084A1 US 11552402 A US11552402 A US 11552402A US 2002140084 A1 US2002140084 A1 US 2002140084A1
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US
United States
Prior art keywords
hollow pipe
semiconductor device
substrate
tape wiring
wiring substrate
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Granted
Application number
US10/115,524
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US6605869B2 (en
Inventor
Naoto Kimura
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Renesas Electronics Corp
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Individual
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Filing date
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Assigned to NEC CORPORATION reassignment NEC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIMURA, NAOTO
Publication of US20020140084A1 publication Critical patent/US20020140084A1/en
Assigned to NEC ELECTRONICS CORPORATION reassignment NEC ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NEC CORPORATION
Application granted granted Critical
Publication of US6605869B2 publication Critical patent/US6605869B2/en
Assigned to RENESAS ELECTRONICS CORPORATION reassignment RENESAS ELECTRONICS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NEC ELECTRONICS CORPORATION
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10W72/00
    • H10W90/00
    • H10W90/724
    • H10W90/754

Definitions

  • the present invention relates to a semiconductor integrated circuit layout method and in particular, to a semiconductor device capable of improving cooling efficiency with a high integration density and reducing electric resistance as well as increasing the assembling efficiency.
  • Japanese Patent Publication 58-114500 discloses a semiconductor device as shown in FIG. 6.
  • a semiconductor device 42 connected to a lead 43 is mounted on each of unit substrates 41 .
  • the units substrates are arranged in matrix shape (honeycomb shape)and the leads between the unit substrates are connected to each other via connectors (not depicted).
  • coolant is flown so as to cool the semiconductor device 42 .
  • Japanese Patent Publication 6-342991 discloses a semiconductor device as shown in FIG. 7.
  • prolonged main body substrates 51 having a hexagonal end face are bundled and semiconductor devices 52 are mounted on the outer exposed surface.
  • a lead 53 is formed to be connected to the semiconductor device 52 .
  • leads 53 of the adjacent substrates are connected in contact with each other.
  • coolant is flown through a hollow center 54 of the prolonged main body substrate 51 so as to cool the semiconductor device 52 .
  • the present invention provides a semiconductor device comprising: a tape wiring substrate; a semiconductor device mounted on one main side of the tape wiring substrate; a solder ball or bump electrode electrically connected with a predetermined position of the one main side of the tape wiring substrate including the semiconductor device and provided on the other side of the tape wiring substrate; and a hollow pipe-shaped substrate; wherein the tape wiring substrate is wound on the hollow pipe-shaped substrate with the one main side directed to the hollow pipe-shape substrate.
  • FIG. 1 a semiconductor device according to a first embodiment of the present invention.
  • FIG. 2 a semiconductor device according to a second embodiment of the present invention.
  • FIG. 3 shows a production step of the semiconductor device production method according to the embodiment of the present invention.
  • FIG. 4 shows a step after the step of FIG. 3.
  • FIG. 5 shows a step after the step of FIG. 4.
  • FIG. 6 shows a semiconductor device according to the conventional technique.
  • FIG. 7 shows another semiconductor device according to the conventional technique.
  • FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention including a cross sectional end surface.
  • a tape wiring substrate 12 is wound around a hollow pipe-shaped substrate 11 having a hexagonal outer shape.
  • This tape wiring substrate 12 is a tape made from a flexible film such as a polyimide film.
  • the flip-chip type semiconductor element 15 is composed of a semiconductor chip 21 and a solder ball or a bump electrode 22 and a sealing resin 25 .
  • the semiconductor chip 21 has an upper surface exposed from the sealing resin 25 to be in direct contact with the outer wall of the hollow pipe-shaped substrate 11 .
  • the wire type semiconductor element 16 is composed of a semiconductor chip 23 , a bonding wire 24 , and a sealing resin 26 constituting the package.
  • the sealing resin 26 constituting the package has its upper surface in direct contact with the outer wall of the hollow pipe-shaped substrate 11 .
  • solder ball or a bump electrode 13 is electrically connected with a predetermined position inside the tape wiring substrate 12 including the semiconductor elements 15 and 16 .
  • the hollow pipe-shaped substrate 11 having a length greater than the width of the tape wiring substrate 12 has a hollow center as a coolant path 14 where a cooling gas and a cooling liquid are flown so as to cool down the semiconductor element.
  • FIG. 2 is a front view of a semiconductor device according to a second embodiment of the present invention. It should be noted that like elements as in FIG. 1 are denoted by like reference symbols and their explanations are omitted. Moreover, to prevent complicated representation, in FIG. 2, the semiconductor elements 15 , 16 are not depicted.
  • FIG. 2 a plurality of the structures shown in FIG. 1 are stacked one on another and the solder ball or bump electrode 13 of the tape wiring substrate (shown by a thick line) 12 wound around the hollow pipe-shaped substrate 11 is connected to the solder ball or bump electrode 13 of the tape wiring substrate 12 wound on the adjacent hollow pipe-shaped substrate 11 and lowermost solder ball or bump electrode 13 in the figure is connected to a predetermined position of a wiring pattern (not depicted) formed on the wiring substrate 18 , thereby reducing the electric resistance.
  • a wiring pattern not depicted
  • a wiring pattern is formed on a main surface of a flexible tape such as a polyimide film so as to constitute the tape wiring substrate 12 having one main surface (upper surface in Figure) on which the semiconductor elements 15 , 16 are mounted.
  • the semiconductor elements are flip-chip type semiconductor 15
  • the solder ball or the bump electrode 22 is connected to a predetermined position of the wiring pattern of the tape wiring substrate 12 .
  • the semiconductor element is a wire type semiconductor element 16
  • a bonding wire 24 is used to connect the electrode pad of the semiconductor chip 23 to a predetermined position of the wiring pattern of the tape wiring substrate 12 .
  • the sealing resin 25 is molded so as to expose the upper surface of the semiconductor chip 21 .
  • sealing resin 26 is used to perform molding so that the entire surface is covered.
  • solder ball or bump electrode 13 is formed on the other surface (lower surface in the figure) of the tape wiring substrate 12 .
  • This solder ball or bump electrode 13 is electrically connected with the upper surface of the tape wiring substrate 12 including the semiconductor elements 15 , 16 .
  • the tape wiring substrate 12 is wound on the hollow pipe-shaped substrate 11 with the aforementioned main surface inside. It should be noted that in FIG. 5, the tape wiring substrate 12 is shown by a thick line as in FIG. 1 and FIG. 2.
  • connection is made by using the solder ball or bump electrode on the hollow pipe-shaped substrate, the connection is shortest, thereby reducing the electric resistance.
  • the solder balls or bump electrodes on the different hollow pipe-shaped substrates it is possible to make a plurality of hollow pipe-shaped substrates wound with the tape wiring substrate into a unitary block and accordingly, it is possible to reduce the electric resistance between the semiconductor elements on the different hollow pipe-shaped substrates.
  • the tape wiring substrate is wound around the hollow pipe-shaped substrate with one of its main surfaces facing to the hollow pipe-shaped substrate, thereby mounting the semiconductor elements on the hollow pipe-shaped substrate. This significantly improves the work efficiency.
  • the semiconductor element can be arranged over all the outer periphery of the hollow pipe-shaped substrate, the semiconductor device can increase its mounting density.

Landscapes

  • Wire Bonding (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Mounting Of Printed Circuit Boards And The Like (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Casings For Electric Apparatus (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention provides a semiconductor device comprising: a tape wiring substrate; a semiconductor element mounted one main surface of the tape wiring substrate; a solder ball or pump electrode provided on the other surface of the tape wiring substrate while electrically connected with a predetermined position of the main surface of the tape wiring substrate including the semiconductor element; and a hollow pipe-shaped substrate; wherein the tape wiring substrate is wound around the hollow pipe-shaped substrate with the main surface arranged toward the hollow pipe-shaped substrate.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to a semiconductor integrated circuit layout method and in particular, to a semiconductor device capable of improving cooling efficiency with a high integration density and reducing electric resistance as well as increasing the assembling efficiency. [0002]
  • 2. Description of the Prior Art [0003]
  • Conventionally, there have been suggested various semiconductor devices capable of improving cooling efficiency with a high integration density. For example, Japanese Patent Publication 58-114500 discloses a semiconductor device as shown in FIG. 6. In FIG. 6, on each of [0004] unit substrates 41, a semiconductor device 42 connected to a lead 43 is mounted. The units substrates are arranged in matrix shape (honeycomb shape)and the leads between the unit substrates are connected to each other via connectors (not depicted). In space 44 between the unit substrates thus assembled, coolant is flown so as to cool the semiconductor device 42.
  • Moreover, Japanese Patent Publication 6-342991 discloses a semiconductor device as shown in FIG. 7. In FIG. 7, prolonged [0005] main body substrates 51 having a hexagonal end face are bundled and semiconductor devices 52 are mounted on the outer exposed surface. On the hexagonal surface of the main body substrates 51, a lead 53 is formed to be connected to the semiconductor device 52. Moreover, leads 53 of the adjacent substrates are connected in contact with each other. And coolant is flown through a hollow center 54 of the prolonged main body substrate 51 so as to cool the semiconductor device 52.
  • In the conventional technique shown in FIG. 6, coolant is flown inside and the semiconductor device can be cooled down. However, leads are used for connection between the semiconductor devices, which increases electric resistance. Moreover, a plenty of unit substrates are assembled to form a space for flowing the coolant and connectors are used for connection between the unit substrates. Thus, a plenty of assembling steps are required. Furthermore, since each semiconductor device is mounted separately, the number of assembling steps is further increased. [0006]
  • On the other hand, in the conventional technique as shown in FIG. 7, the coolant flown inside can cool down the semiconductor device. However, in the same way as in FIG. 6, since leads are used for connection between the semiconductor devices, the electric resistance is increased. Moreover, since each semiconductor device is separately mounted, the number of assembling steps is increased. Furthermore, the semiconductor devices are mounted only on the outer exposed surface of the bundled main body substrates and accordingly, it is impossible to realize a higher integration density. [0007]
  • It is therefore an object of the present invention to provide a semiconductor device capable of sufficiently cooling the semiconductor device, reducing the electric resistance, realizing a high integration density, and reducing the number of assembling steps. [0008]
  • BRIEF SUMMARY OF THE INVENTION Object of the Invention
  • It is therefore an object of the present invention to provide a semiconductor device capable of sufficiently cooling the semiconductor device, reducing the electric resistance, realizing a high integration density, and reducing the number of assembling steps. [0009]
  • Summary of the Invention
  • The present invention provides a semiconductor device comprising: a tape wiring substrate; a semiconductor device mounted on one main side of the tape wiring substrate; a solder ball or bump electrode electrically connected with a predetermined position of the one main side of the tape wiring substrate including the semiconductor device and provided on the other side of the tape wiring substrate; and a hollow pipe-shaped substrate; wherein the tape wiring substrate is wound on the hollow pipe-shaped substrate with the one main side directed to the hollow pipe-shape substrate.[0010]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above-mentioned and other objects, features and advantages of this invention will become more apparent by reference to the following detailed description of the invention taken in conjunction with the accompanying drawings, wherein: [0011]
  • FIG. 1 a semiconductor device according to a first embodiment of the present invention. [0012]
  • FIG. 2 a semiconductor device according to a second embodiment of the present invention. [0013]
  • FIG. 3 shows a production step of the semiconductor device production method according to the embodiment of the present invention. [0014]
  • FIG. 4 shows a step after the step of FIG. 3. [0015]
  • FIG. 5 shows a step after the step of FIG. 4. [0016]
  • FIG. 6 shows a semiconductor device according to the conventional technique. [0017]
  • FIG. 7 shows another semiconductor device according to the conventional technique.[0018]
  • DETAILED DESCRIPTION OF THE INVENTION
  • Description will now be directed to embodiments of the present invention with reference to the attached drawings. [0019]
  • FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention including a cross sectional end surface. A [0020] tape wiring substrate 12 is wound around a hollow pipe-shaped substrate 11 having a hexagonal outer shape.
  • Inside the tape wiring substrate (shown a thick line) are mounted a flip-chip [0021] type semiconductor element 15 and a wire type semiconductor element 16. These elements have their upper surfaces pushed against the six outer walls of the hollow pipe-shaped substrate 11 and between them, adhesive resin 17 is molded. This tape wiring substrate 12 is a tape made from a flexible film such as a polyimide film.
  • The flip-chip [0022] type semiconductor element 15 is composed of a semiconductor chip 21 and a solder ball or a bump electrode 22 and a sealing resin 25. The semiconductor chip 21 has an upper surface exposed from the sealing resin 25 to be in direct contact with the outer wall of the hollow pipe-shaped substrate 11.
  • The wire [0023] type semiconductor element 16 is composed of a semiconductor chip 23, a bonding wire 24, and a sealing resin 26 constituting the package. The sealing resin 26 constituting the package has its upper surface in direct contact with the outer wall of the hollow pipe-shaped substrate 11.
  • On the other hand, outside the wound [0024] tape wiring substrate 12, there is provided a solder ball or a bump electrode 13. This solder ball or bump electrode 13 is electrically connected with a predetermined position inside the tape wiring substrate 12 including the semiconductor elements 15 and 16.
  • Spaces between the [0025] semiconductor elements 15, 16, the hollow pipe-shaped substrate 11, and the tape wiring substrate 12 are filled with adhesive resin 17 which is different from the resin 25, 26 constituting the package, thereby making the components as a unitary block.
  • Moreover, the hollow pipe-[0026] shaped substrate 11 having a length greater than the width of the tape wiring substrate 12 has a hollow center as a coolant path 14 where a cooling gas and a cooling liquid are flown so as to cool down the semiconductor element.
  • FIG. 2 is a front view of a semiconductor device according to a second embodiment of the present invention. It should be noted that like elements as in FIG. 1 are denoted by like reference symbols and their explanations are omitted. Moreover, to prevent complicated representation, in FIG. 2, the [0027] semiconductor elements 15, 16 are not depicted.
  • In FIG. 2, a plurality of the structures shown in FIG. 1 are stacked one on another and the solder ball or [0028] bump electrode 13 of the tape wiring substrate (shown by a thick line) 12 wound around the hollow pipe-shaped substrate 11 is connected to the solder ball or bump electrode 13 of the tape wiring substrate 12 wound on the adjacent hollow pipe-shaped substrate 11 and lowermost solder ball or bump electrode 13 in the figure is connected to a predetermined position of a wiring pattern (not depicted) formed on the wiring substrate 18, thereby reducing the electric resistance.
  • Next, referring to FIG. 3 to FIG. 5, explanation will be given on the production method of the embodiments of the present invention. [0029]
  • Firstly, as shown in FIG. 3, a wiring pattern is formed on a main surface of a flexible tape such as a polyimide film so as to constitute the [0030] tape wiring substrate 12 having one main surface (upper surface in Figure) on which the semiconductor elements 15, 16 are mounted. When the semiconductor elements are flip-chip type semiconductor 15, the solder ball or the bump electrode 22 is connected to a predetermined position of the wiring pattern of the tape wiring substrate 12. When the semiconductor element is a wire type semiconductor element 16, a bonding wire 24 is used to connect the electrode pad of the semiconductor chip 23 to a predetermined position of the wiring pattern of the tape wiring substrate 12.
  • Next, as shown in FIG. 4, when the semiconductor element is the flip-chip [0031] type semiconductor element 15, the sealing resin 25 is molded so as to expose the upper surface of the semiconductor chip 21. Moreover, when the semiconductor element is the wire type semiconductor element 16, sealing resin 26 is used to perform molding so that the entire surface is covered.
  • Then, a solder ball or [0032] bump electrode 13 is formed on the other surface (lower surface in the figure) of the tape wiring substrate 12. This solder ball or bump electrode 13 is electrically connected with the upper surface of the tape wiring substrate 12 including the semiconductor elements 15, 16.
  • Next, as shown in FIG. 5, the [0033] tape wiring substrate 12 is wound on the hollow pipe-shaped substrate 11 with the aforementioned main surface inside. It should be noted that in FIG. 5, the tape wiring substrate 12 is shown by a thick line as in FIG. 1 and FIG. 2.
  • Spaces between the [0034] semiconductor elements 15, 16 and the hollow pipe-shaped substrate 11, and the tape wiring substrate 12 are filled with an adhesive resin 17 which is different from the resin 25, 26 constituting the package, thereby obtaining a unitary block.
  • According to this invention, since connection is made by using the solder ball or bump electrode on the hollow pipe-shaped substrate, the connection is shortest, thereby reducing the electric resistance. Especially by connecting the solder balls or bump electrodes on the different hollow pipe-shaped substrates, it is possible to make a plurality of hollow pipe-shaped substrates wound with the tape wiring substrate into a unitary block and accordingly, it is possible to reduce the electric resistance between the semiconductor elements on the different hollow pipe-shaped substrates. [0035]
  • Moreover, the tape wiring substrate is wound around the hollow pipe-shaped substrate with one of its main surfaces facing to the hollow pipe-shaped substrate, thereby mounting the semiconductor elements on the hollow pipe-shaped substrate. This significantly improves the work efficiency. [0036]
  • Furthermore, since the semiconductor element can be arranged over all the outer periphery of the hollow pipe-shaped substrate, the semiconductor device can increase its mounting density. [0037]
  • Although the invention has been described with reference to specific embodiments, this description is not meant to be construed in a limiting sense. Various modifications of the disclosed embodiments will become apparent to persons skilled in the art upon reference to the description of the invention. It is therefore contemplated that the appended claims will cover any modifications or embodiments as fall within the true scope of the invention. [0038]

Claims (7)

What is claimed is:
1. A semiconductor device comprising:
a tape wiring substrate;
a semiconductor element mounted one main surface of the tape wiring substrate;
a solder ball or pump electrode provided on the other surface of the tape wiring substrate while electrically connected with a predetermined position of the main surface of the tape wiring substrate including the semiconductor element; and
a hollow pipe-shaped substrate;
wherein the tape wiring substrate is wound around the hollow pipe-shaped substrate with the main surface arranged toward the hollow pipe-shaped substrate.
2. The semiconductor device according to claim 1, wherein the hollow pipe-shaped substrate has a polygonal or circular outer shape.
3. The semiconductor device according to claim 1, wherein the hollow pipe-shaped substrate has a hexagonal outer shape.
4. The semiconductor device according to claim 1, wherein a plurality of the hollow pipe-shaped substrate each wound with the tape wiring substrate are provided, and a solder ball or bump electrode of a tape wiring substrate wound around a first hollow pipe-shaped substrate is in abutment with and connected to a solder ball or bump electrode of a tape wiring substrate wound on a second hollow pipe-shaped substrate adjacent tot he first hollow pipe-shaped substrate.
5. The semiconductor device according to claim 1, wherein spaces between the semiconductor elements and the hollow pipe-shaped substrates and the tape wiring substrates are filled with resin.
6. The semiconductor device according to claim 1, wherein coolant flows through the hollow center of the hollow pipe-shaped substrate.
7. The semiconductor device according to claim 1, wherein the solder ball or the bump electrode is mounted with connection to the wiring of the wiring substrate.
US10/115,524 2001-04-03 2002-04-03 Semiconductor device with improved cooling efficiency and reduced electric resistance Expired - Fee Related US6605869B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001104923A JP4401037B2 (en) 2001-04-03 2001-04-03 Semiconductor device and manufacturing method thereof
JP2001-104923 2001-04-03
JP104923/2001 2001-04-03

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US6605869B2 US6605869B2 (en) 2003-08-12

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JP (1) JP4401037B2 (en)
KR (1) KR20020079436A (en)
CN (1) CN1379617A (en)
TW (1) TW516361B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
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US7608919B1 (en) 2003-09-04 2009-10-27 University Of Notre Dame Du Lac Interconnect packaging systems
US20130187272A1 (en) * 2011-07-29 2013-07-25 Kabushiki Kaisha Toshiba Semiconductor module
US9620473B1 (en) 2013-01-18 2017-04-11 University Of Notre Dame Du Lac Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment
DE102019212638A1 (en) * 2019-08-23 2021-02-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing and applying a power electronic module to a heat sink and the resulting arrangement

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US6787884B2 (en) * 2002-05-30 2004-09-07 Matsushita Electric Industrial Co., Ltd. Circuit component, circuit component package, circuit component built-in module, circuit component package production and circuit component built-in module production
TW576549U (en) * 2003-04-04 2004-02-11 Advanced Semiconductor Eng Multi-chip package combining wire-bonding and flip-chip configuration
KR100694834B1 (en) * 2005-06-01 2007-03-14 주식회사 영신알에프 Polygonal 3D RF Amplifier Module
KR100655218B1 (en) * 2005-07-01 2006-12-08 삼성전자주식회사 3D semiconductor module with a polygonal ground block
DE102009024370B4 (en) * 2009-06-09 2014-04-30 Semikron Elektronik Gmbh & Co. Kg Converter arrangement with cooling device and manufacturing method for this purpose
CN102121829B (en) 2010-08-09 2013-06-12 汪滔 Miniature inertia measurement system
CN106030245B (en) 2014-04-25 2019-11-15 深圳市大疆创新科技有限公司 Inertial Sensing Device
US9646953B2 (en) * 2014-11-12 2017-05-09 Intel Corporation Integrated circuit packaging techniques and configurations for small form-factor or wearable devices
JP6825594B2 (en) * 2018-03-09 2021-02-03 オムロン株式会社 Electronic devices and their manufacturing methods

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JPS58114500A (en) 1981-12-28 1983-07-07 富士通株式会社 High density mounting substrate
US5270485A (en) 1991-01-28 1993-12-14 Sarcos Group High density, three-dimensional, intercoupled circuit structure
US5646446A (en) * 1995-12-22 1997-07-08 Fairchild Space And Defense Corporation Three-dimensional flexible assembly of integrated circuits
TW408497B (en) * 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7608919B1 (en) 2003-09-04 2009-10-27 University Of Notre Dame Du Lac Interconnect packaging systems
US7612443B1 (en) * 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
US8021965B1 (en) 2003-09-04 2011-09-20 University Of Norte Dame Du Lac Inter-chip communication
US8623700B1 (en) 2003-09-04 2014-01-07 University Of Notre Dame Du Lac Inter-chip communication
US10410989B2 (en) 2003-09-04 2019-09-10 University Of Notre Dame Du Lac Inter-chip alignment
US20130187272A1 (en) * 2011-07-29 2013-07-25 Kabushiki Kaisha Toshiba Semiconductor module
US9087831B2 (en) * 2011-07-29 2015-07-21 Kabushiki Kaisha Toshiba Semiconductor module including first and second wiring portions separated from each other
US9620473B1 (en) 2013-01-18 2017-04-11 University Of Notre Dame Du Lac Quilt packaging system with interdigitated interconnecting nodules for inter-chip alignment
DE102019212638A1 (en) * 2019-08-23 2021-02-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing and applying a power electronic module to a heat sink and the resulting arrangement
DE102019212638B4 (en) 2019-08-23 2023-12-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing and applying a power electronic module to a heat sink and the resulting arrangement

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CN1379617A (en) 2002-11-13
JP2002299545A (en) 2002-10-11
TW516361B (en) 2003-01-01
US6605869B2 (en) 2003-08-12
KR20020079436A (en) 2002-10-19
JP4401037B2 (en) 2010-01-20

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