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UA97691C2 - Способ получения твердого поликристаллического кремния высокой чистоты - Google Patents

Способ получения твердого поликристаллического кремния высокой чистоты

Info

Publication number
UA97691C2
UA97691C2 UAA201004264A UAA201004264A UA97691C2 UA 97691 C2 UA97691 C2 UA 97691C2 UA A201004264 A UAA201004264 A UA A201004264A UA A201004264 A UAA201004264 A UA A201004264A UA 97691 C2 UA97691 C2 UA 97691C2
Authority
UA
Ukraine
Prior art keywords
polycrystalline silicon
melt
silicon
solid polycrystalline
purity
Prior art date
Application number
UAA201004264A
Other languages
English (en)
Ukrainian (uk)
Inventor
Доминик Леблан
Рене Буасвер
Original Assignee
Силисиум Беканкур Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Силисиум Беканкур Инк. filed Critical Силисиум Беканкур Инк.
Publication of UA97691C2 publication Critical patent/UA97691C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Предлагается способ получения твердого поликристаллического кремния высокой чистоты путем очистки металлургического кремния низкой чистоты, содержащего, по меньшей мере, одно загрязняющее вещество. Способ включает выдержку расплава металлургического кремния низкой чистоты в форме, имеющей изолированные нижнюю и боковые стенки и открытую верхнюю часть; отверждение расплава направленным отверждением от открытой верхней части в направлении к нижней стенке при электромагнитном перемешивании расплава; контролирование скорости направленного отверждения; прекращение направленного отверждения, когда расплав частично затвердел,
UAA201004264A 2007-09-13 2008-03-13 Способ получения твердого поликристаллического кремния высокой чистоты UA97691C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US96006107P 2007-09-13 2007-09-13
PCT/CA2008/000492 WO2009033255A1 (en) 2007-09-13 2008-03-13 Process for the production of medium and high purity silicon from metallurgical grade silicon

Publications (1)

Publication Number Publication Date
UA97691C2 true UA97691C2 (ru) 2012-03-12

Family

ID=40451503

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201004264A UA97691C2 (ru) 2007-09-13 2008-03-13 Способ получения твердого поликристаллического кремния высокой чистоты

Country Status (16)

Country Link
US (1) US7727502B2 (ru)
EP (1) EP2212249B1 (ru)
JP (1) JP2010538952A (ru)
KR (1) KR20100061510A (ru)
CN (1) CN101868422B (ru)
AU (1) AU2008299523A1 (ru)
BR (1) BRPI0816972A2 (ru)
CA (1) CA2695393C (ru)
EA (1) EA017480B1 (ru)
ES (1) ES2530720T3 (ru)
MX (1) MX2010002728A (ru)
MY (1) MY143807A (ru)
NO (1) NO20100512L (ru)
UA (1) UA97691C2 (ru)
WO (1) WO2009033255A1 (ru)
ZA (1) ZA201000882B (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2632827C2 (ru) * 2015-12-08 2017-10-10 Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") Устройство для рафинирования кремния

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100178195A1 (en) * 2007-06-08 2010-07-15 Motoyuki Yamada Method of solidifying metallic silicon
JP4748187B2 (ja) * 2007-12-27 2011-08-17 国立大学法人東北大学 Ｓｉ結晶インゴットの製造方法
WO2011146814A2 (en) 2010-05-20 2011-11-24 Dow Corning Corporation Method and system for producing an aluminum-silicon alloy
JP2012106886A (ja) * 2010-11-17 2012-06-07 Nippon Steel Materials Co Ltd 金属シリコンの凝固精製方法及び装置
CN102275931B (zh) * 2011-07-05 2013-05-29 兰州大学 氢氧焰等离子体提纯冶金级多晶硅粉体的方法
EP2710156B1 (en) * 2011-07-18 2016-09-21 ABB Research Ltd. A method and a control system for controlling a melting process
CN103266350B (zh) * 2013-05-31 2015-08-12 大连理工大学 多晶硅铸锭硅真空固液分离方法及分离设备
CN103266349B (zh) * 2013-05-31 2015-07-15 大连理工大学 高纯中空硅材料、多晶硅铸锭硅真空固液分离方法及设备
JP6401051B2 (ja) * 2014-12-26 2018-10-03 京セラ株式会社 多結晶シリコンインゴットの製造方法
CN107255572B (zh) * 2017-05-12 2020-04-21 宜昌南玻硅材料有限公司 半熔铸锭工艺中硅锭的少子寿命抽样方法
JP6919633B2 (ja) 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
AU2019444019B2 (en) * 2019-04-30 2022-03-10 Wacker Chemie Ag Method for refining crude silicon melts using a particulate mediator
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
EP4082966A1 (en) * 2021-04-26 2022-11-02 Ferroglobe Innovation, S.L. Method for obtaining purified silicon metal

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
US3752221A (en) * 1969-10-30 1973-08-14 United Aircraft Corp Mold apparatus for casting with downward unidirectional solidification
US4094731A (en) * 1976-06-21 1978-06-13 Interlake, Inc. Method of purifying silicon
US4298423A (en) * 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4242175A (en) * 1978-12-26 1980-12-30 Zumbrunnen Allen D Silicon refining process
GB2052461B (en) * 1979-05-24 1983-04-07 Aluminum Co Of America Silicon purification method
US4304703A (en) * 1980-06-23 1981-12-08 Ppg Industries, Inc. Cationic polymer dispersions and their method of preparation
DE3150539A1 (de) 1981-12-21 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere fuer solarzellen, verwendbarem silizium
FR2524489A1 (fr) * 1982-03-30 1983-10-07 Pechiney Aluminium Procede de purification de metaux par segregation
DE3220285A1 (de) 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen polykristalliner, fuer nachfolgendes zonenschmelzen geeigneter siliciumstaebe
NO152551C (no) * 1983-02-07 1985-10-16 Elkem As Fremgangsmaate til fremstilling av rent silisium.
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von grobkristallinem silicium
DE3323896A1 (de) 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
JPH0696444B2 (ja) 1987-08-27 1994-11-30 川崎製鉄株式会社 高純度シリコンの製造方法
DE3802531A1 (de) 1988-01-28 1989-08-17 Siemens Ag Verfahren zum abtrennen von festen partikeln aus siliziumschmelzen
DE3804248A1 (de) 1988-02-11 1989-08-24 Siemens Ag Verfahren zum abtrennen von verunreinigungen aus einer siliziumschmelze durch gerichtete erstarrung
DE3929635A1 (de) 1989-09-06 1991-03-07 Siemens Ag Verfahren zum abtrennen fester partikel aus siliziumschmelzen
JPH05124809A (ja) 1991-10-30 1993-05-21 Nippon Sheet Glass Co Ltd シリコンの凝固精製法
JP3263104B2 (ja) 1991-11-27 2002-03-04 川崎製鉄株式会社 金属シリコンの精製方法
JPH05254817A (ja) * 1992-03-12 1993-10-05 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
WO1997003922A1 (en) 1994-01-10 1997-02-06 Showa Aluminum Corporation Process for producing high-purity silicon
JP3140300B2 (ja) 1994-03-29 2001-03-05 川崎製鉄株式会社 シリコンの精製方法および精製装置
NO180532C (no) * 1994-09-01 1997-05-07 Elkem Materials Fremgangsmåte for fjerning av forurensninger fra smeltet silisium
JPH0873297A (ja) 1994-09-05 1996-03-19 Shin Etsu Chem Co Ltd 太陽電池用基板材料の製法とこれを用いた太陽電池
JPH08217436A (ja) 1995-02-17 1996-08-27 Kawasaki Steel Corp 金属シリコンの凝固精製方法、その装置及びその装置に用いる鋳型
EP0757013B1 (en) * 1995-08-04 2001-11-07 Sharp Kabushiki Kaisha Apparatus for purifying metal
BR9611816A (pt) * 1996-10-14 1999-07-13 Kawasaki Steel Co Processo e aparelho para fabricação de silício policristalino e processo para fabricação de pastilhas de silício para baterias solares
JPH10139415A (ja) 1996-10-30 1998-05-26 Kawasaki Steel Corp 溶融シリコンの凝固精製方法
JPH10182135A (ja) 1996-12-20 1998-07-07 Kawasaki Steel Corp シリコンの凝固精製方法
JPH10182286A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp シリコンの連続鋳造方法
JPH10182137A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
JPH10182129A (ja) 1996-12-26 1998-07-07 Kawasaki Steel Corp 金属シリコンの精製方法
JP3852147B2 (ja) 1996-12-27 2006-11-29 Ｊｆｅスチール株式会社 太陽電池用多結晶シリコン・インゴットの製造方法
JPH10251009A (ja) 1997-03-14 1998-09-22 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法
JPH10251008A (ja) 1997-03-14 1998-09-22 Kawasaki Steel Corp 金属シリコンの凝固精製方法
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
JPH10273313A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
JPH10273311A (ja) 1997-03-28 1998-10-13 Kawasaki Steel Corp 太陽電池用シリコンの精製方法及び装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
US5972107A (en) * 1997-08-28 1999-10-26 Crystal Systems, Inc. Method for purifying silicon
JP4003271B2 (ja) 1998-01-12 2007-11-07 Ｊｆｅスチール株式会社 シリコンの一方向凝固装置
JPH11310496A (ja) * 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
JP4365480B2 (ja) 1999-06-07 2009-11-18 昭和電工株式会社 高純度シリコンの製造方法
JP2001278613A (ja) 2000-03-29 2001-10-10 Kawasaki Steel Corp シリコンの一方向凝固装置
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
JP2003238137A (ja) 2002-02-21 2003-08-27 Kawatetsu Techno Res Corp 太陽電池用多結晶シリコンの製造方法
NO318092B1 (no) 2002-05-22 2005-01-31 Elkem Materials Kalsium-silikatbasert slagg, fremgangsmate for fremstilling av kalsium-silikatbasert slagg, og anvendelse for slaggbehandling av smeltet silium
AU2003277041A1 (en) * 2002-09-27 2004-04-19 Astropower, Inc. Methods and systems for purifying elements
CN1221470C (zh) 2002-11-26 2005-10-05 郑智雄 高纯度硅的生产方法
CN1299983C (zh) 2003-07-22 2007-02-14 龚炳生 光电级硅的制造方法
US20070202029A1 (en) 2003-12-04 2007-08-30 Gary Burns Method Of Removing Impurities From Metallurgical Grade Silicon To Produce Solar Grade Silicon
NO333319B1 (no) 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP4115432B2 (ja) 2004-07-14 2008-07-09 シャープ株式会社 金属の精製方法
UA97488C2 (ru) * 2006-09-14 2012-02-27 Силисиум Беканкур Инк. Способ очистки кремнийсодержащего материала низкой чистоты, применение барабанной печи в нем, расплав кремнийсодержащего материала, отходящие газы и твердый поликристаллический кремний, полученные данным способом

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2632827C2 (ru) * 2015-12-08 2017-10-10 Общество с ограниченной ответственностью "Современные химические и металлургические технологии" (ООО "СХИМТ") Устройство для рафинирования кремния

Also Published As

Publication number Publication date
EP2212249A4 (en) 2012-08-15
ZA201000882B (en) 2011-04-28
NO20100512L (no) 2010-04-08
US7727502B2 (en) 2010-06-01
EA017480B1 (ru) 2012-12-28
JP2010538952A (ja) 2010-12-16
CA2695393C (en) 2012-01-03
CN101868422A (zh) 2010-10-20
MX2010002728A (es) 2010-08-02
BRPI0816972A2 (pt) 2015-03-24
MY143807A (en) 2011-07-15
CA2695393A1 (en) 2009-03-19
EA201070358A1 (ru) 2010-08-30
KR20100061510A (ko) 2010-06-07
CN101868422B (zh) 2013-10-09
US20090074648A1 (en) 2009-03-19
EP2212249B1 (en) 2015-01-14
EP2212249A1 (en) 2010-08-04
ES2530720T3 (es) 2015-03-04
AU2008299523A1 (en) 2009-03-19
WO2009033255A1 (en) 2009-03-19

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