TWM622809U - Powder atomic layer deposition machine with downward blowing line - Google Patents
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- TWM622809U TWM622809U TW110208785U TW110208785U TWM622809U TW M622809 U TWM622809 U TW M622809U TW 110208785 U TW110208785 U TW 110208785U TW 110208785 U TW110208785 U TW 110208785U TW M622809 U TWM622809 U TW M622809U
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Abstract
本新型提供一種具有下吹管線的粉末原子層沉積機台,主要包括一真空腔體、一軸封裝置及一驅動單元,其中驅動單元經由軸封裝置連接真空腔體,並帶動真空腔體轉動。真空腔體包括一反應空間及一下吹管線,其中反應空間用以容置複數顆粉末,而下吹管線則連接反應空間,並朝向反應空間的底部。至少一非反應氣體輸送管線位於軸封裝置內,用以連接下吹管線,並經由下吹管線將一非反應氣體輸送至反應空間內,以吹動沉積在反應空間的底部的粉末,以利於在粉末的表面形成厚度均勻的薄膜。 The new model provides a powder atomic layer deposition machine with a downward blowing line, which mainly includes a vacuum chamber, a shaft sealing device and a driving unit, wherein the driving unit is connected to the vacuum chamber through the shaft sealing device and drives the vacuum chamber to rotate. The vacuum chamber includes a reaction space and a blow-down line, wherein the reaction space is used for accommodating a plurality of powders, and the blow-down line is connected to the reaction space and faces the bottom of the reaction space. At least one non-reactive gas delivery line is located in the shaft sealing device for connecting the down blowing line, and delivering a non-reactive gas to the reaction space through the down blowing line to blow the powder deposited at the bottom of the reaction space, so as to facilitate A film of uniform thickness is formed on the surface of the powder.
Description
本新型有關於一種具有下吹管線的粉末原子層沉積機台,有利於在粉末的表面形成厚度均勻的薄膜。 The new model relates to a powder atomic layer deposition machine with a downward blowing line, which is beneficial to form a thin film with a uniform thickness on the surface of the powder.
奈米顆粒(nanoparticle)一般被定義為在至少一個維度上小於100奈米的顆粒,奈米顆粒與宏觀物質在物理及化學上的特性截然不同。一般而言,宏觀物質的物理特性與本身的尺寸無關,但奈米顆粒則非如此,奈米顆粒在生物醫學、光學和電子等領域都具有潛在的應用。 Nanoparticles are generally defined as particles smaller than 100 nanometers in at least one dimension that are physically and chemically distinct from macroscopic substances. In general, the physical properties of macroscopic substances are independent of their size, but this is not the case for nanoparticles, which have potential applications in fields such as biomedicine, optics, and electronics.
量子點(Quantum Dot)是半導體材料的奈米顆粒,目前研究的半導體材料為II-VI材料,如ZnS、CdS、CdSe等,其中又以CdSe最受到矚目。量子點的尺寸通常在2至50奈米之間,量子點被紫外線照射後,量子點中的電子會吸收能量,並從價帶躍遷到傳導帶。被激發的電子從傳導帶回到價帶時,會通過發光釋放出能量。 Quantum Dot (Quantum Dot) is a nanoparticle of semiconductor material. The currently studied semiconductor materials are II-VI materials, such as ZnS, CdS, CdSe, etc. Among them, CdSe has attracted the most attention. The size of quantum dots is usually between 2 and 50 nanometers. When the quantum dots are irradiated with ultraviolet light, the electrons in the quantum dots absorb energy and transition from the valence band to the conduction band. Excited electrons release energy by emitting light as they travel from the conduction band back to the valence band.
量子點的能隙與尺寸大小相關,量子點的尺寸越大能隙越小,經照射後會發出波長較長的光,量子點的尺寸越小則能隙越大,經照射後會發出波長較短的光。例如5到6奈米的量子點會發出橘光或紅光,而2到3奈米的量子點則會發出藍光或綠光,當然光色還需取決於量子點的材料組成。 The energy gap of quantum dots is related to the size. The larger the size of the quantum dot, the smaller the energy gap, and it will emit light with a longer wavelength after irradiation. The smaller the size of the quantum dot, the larger the energy gap, and the wavelength will be emitted after irradiation. shorter light. For example, quantum dots of 5 to 6 nanometers will emit orange or red light, while quantum dots of 2 to 3 nanometers will emit blue or green light. Of course, the light color depends on the material composition of the quantum dots.
應用量子點的發光二極體(LED)產生的光接近連續光譜,同時具有高演色性,並有利於提高發光二極體的發光品質。此外亦可透過改變量 子點的尺寸調整發射光的波長,使得量子點成為新一代發光裝置及顯示器的發展重點。 Light emitting diodes (LEDs) using quantum dots produce light close to a continuous spectrum, and at the same time have high color rendering properties, which are beneficial to improve the luminous quality of light emitting diodes. In addition, by changing the The size of the subdots adjusts the wavelength of the emitted light, making quantum dots the focus of the development of a new generation of light-emitting devices and displays.
量子點雖然具有上述的優點及特性,但在應用或製造的過程中容易產生團聚現象。此外量子點具有較高的表面活性,並容易與空氣及水氣發生反應,進而縮短量子點的壽命。 Although quantum dots have the above-mentioned advantages and characteristics, they are prone to agglomeration in the process of application or manufacture. In addition, quantum dots have high surface activity and easily react with air and water vapor, thereby shortening the life of quantum dots.
具體來說,將量子點製作成為發光二極體的密封膠時,可能會產生團聚效應,而降低量子點的光學性能。此外,量子點在製作成發光二極體的密封膠後,外界的氧或水氣仍可能會穿過密封膠而接觸量子點的表面,導致量子點氧化,並影響量子點及發光二極體的效能或使用壽命。量子點表面的缺陷及懸空鍵(dangling bonds)亦可能造成非輻射復合(non-radiative recombination),同樣會影響量子點的發光效率。 Specifically, when quantum dots are used as sealants for light-emitting diodes, agglomeration effects may occur, reducing the optical properties of quantum dots. In addition, after the quantum dots are made into the sealant of the light-emitting diodes, the external oxygen or moisture may still pass through the sealant and contact the surface of the quantum dots, resulting in oxidation of the quantum dots and affecting the quantum dots and light-emitting diodes. performance or service life. Defects and dangling bonds on the surface of quantum dots may also cause non-radiative recombination, which also affects the luminous efficiency of quantum dots.
目前業界主要透過原子層沉積(atomic layer deposition,ALD)在量子點的表面形成一層奈米厚度的薄膜,或者是在量子點的表面形成多層薄膜,以形成量子井結構。 At present, the industry mainly uses atomic layer deposition (ALD) to form a nanometer-thick film on the surface of the quantum dot, or to form a multi-layer film on the surface of the quantum dot to form a quantum well structure.
原子層沉積可以在基板上形成厚度均勻的薄膜,並可有效控制薄膜的厚度,理論上亦適用於三維的量子點。量子點靜置在承載盤時,相鄰的量子點之間會存在接觸點,使得原子層沉積的前驅物氣體無法接觸這些接觸點,並導致無法在所有的奈米顆粒的表面皆形成厚度均勻的薄膜。 Atomic layer deposition can form a thin film with uniform thickness on the substrate, and can effectively control the thickness of the thin film. It is also suitable for three-dimensional quantum dots in theory. When the quantum dots are placed on the carrier plate, there will be contact points between adjacent quantum dots, so that the precursor gas of atomic layer deposition cannot contact these contact points, and it is impossible to form uniform thickness on the surface of all nanoparticles. film.
為了解決上述先前技術的問題,本新型提出一種具有下吹管線的粉末原子層沉積機台,可於原子層沉積製程中充份攪拌粉末,使得粉末擴 散到真空腔體的反應空間的各個區域,以利於在各個粉末的表面上形成厚度均勻的薄膜。 In order to solve the above-mentioned problems of the prior art, the present invention proposes a powder atomic layer deposition machine with a downward blowing line, which can fully stir the powder during the atomic layer deposition process, so that the powder expands It is scattered to each area of the reaction space of the vacuum chamber, so as to facilitate the formation of a thin film with uniform thickness on the surface of each powder.
本新型的一目的,在於提供一種具有下吹管線的粉末原子層沉積機台,主要包括一驅動單元、一軸封裝置及一真空腔體,其中驅動單元經由軸封裝置連接並帶動真空腔體轉動。真空腔體包括一反應空間及一下吹管線,其中反應空間用以容置複數顆粉末,而下吹管線則連接反應空間,並朝向反應空間的底部或側壁。 An object of the present invention is to provide a powder atomic layer deposition machine with a blow-down line, which mainly includes a driving unit, a shaft sealing device and a vacuum chamber, wherein the driving unit is connected through the shaft sealing device and drives the vacuum chamber to rotate . The vacuum chamber includes a reaction space and a blow-down line, wherein the reaction space is used for accommodating a plurality of powders, and the blow-down line is connected to the reaction space and faces the bottom or sidewall of the reaction space.
軸封裝置內設置至少一抽氣管線、至少一進氣管線及至少一非反應氣體輸送管線,其中非反應氣體輸送管線連接真空腔體的下吹管線,並經由下吹管線將一非反應氣體氣體吹向反應空間的底部或側壁,以吹動沉積在反應空間的底部的粉末。此外真空腔體轉動到特定角度時,非反應氣體輸送管線才會連通真空腔體的下吹管線,使得下吹管線固定朝反應空間內的特定角度或位置吹出非反應氣體。 The shaft sealing device is provided with at least one suction line, at least one intake line and at least one non-reactive gas conveying line, wherein the non-reactive gas conveying line is connected to the down blowing line of the vacuum chamber, and a non-reactive gas is passed through the down blowing line. The gas is blown against the bottom or side walls of the reaction space to blow the powder deposited on the bottom of the reaction space. In addition, when the vacuum chamber rotates to a specific angle, the non-reactive gas delivery line will be connected to the down blowing line of the vacuum chamber, so that the down blowing line is fixed to blow the non-reactive gas toward a specific angle or position in the reaction space.
本新型的一目的,在於提供一種具有下吹管線的粉末原子層沉積機台,包括一轉接空間設置於真空腔體及/或軸封裝置,其中非反應氣體輸送管線經由轉接空間連接真空腔體的下吹管線。轉接空間的截面積大於非反應氣體輸送管線及下吹管線,以利於非反應氣體輸送管線經由轉接空間對準下吹管線,並將非反應氣體經由轉接空間輸送至下吹管線。 An object of the present invention is to provide a powder atomic layer deposition machine with a blow-down pipeline, including a transition space disposed in the vacuum chamber and/or the shaft sealing device, wherein the non-reactive gas delivery pipeline is connected to the vacuum through the transition space The blowdown line of the cavity. The cross-sectional area of the transition space is larger than that of the non-reactive gas delivery line and the down blowing line, so that the non-reactive gas delivery line is aligned with the down blowing line through the transition space, and the non-reactive gas is transported to the down blowing line through the transition space.
此外轉接空間可為環狀的空間,並環繞在軸封裝置的內管體周圍,其中非反應氣體輸送管線可經由環狀的轉接空間將非反應氣體持續輸送至下吹管線,使得下吹管線可以持續將非反應氣體輸送至真空腔體的反應空間內,並吹向反應空間的各個方位。 In addition, the transition space can be an annular space and surrounds the inner pipe body of the shaft sealing device, wherein the non-reactive gas delivery line can continuously convey the non-reactive gas to the down blowing line through the annular transition space, so that the down-flow line can be continuously transported. The blowing line can continuously deliver the non-reactive gas into the reaction space of the vacuum chamber, and blow it to all directions of the reaction space.
本新型的一目的,在於提供一種具有下吹管線的粉末原子層沉積機台,其中設置在軸封裝置內的非反應氣體輸送管線用以連接真空腔體的下吹管線,並於非反應氣體輸送管線及下吹管線的連接位置的兩側分別設置一密封環。 An object of the present invention is to provide a powder atomic layer deposition machine with a blow down line, wherein the non-reactive gas delivery line arranged in the shaft sealing device is used to connect the blow down line of the vacuum chamber, and the non-reactive gas is connected to the down blow line of the vacuum chamber. A sealing ring is respectively provided on both sides of the connection position of the conveying pipeline and the blowing-down pipeline.
為了達到上述的目的,本新型提出一種具有下吹管線的粉末原子層沉積機台,包括:一驅動單元;一軸封裝置,連接驅動單元;一真空腔體,連接軸封裝置,驅動單元透過軸封裝置帶動真空腔體轉動,真空腔體包括:一蓋板及一腔體,蓋板的一內表面覆蓋腔體以在兩者之間形成一反應空間,並於蓋板的內表面設置一監控晶圓,其中反應空間用以容置複數顆粉末,粉末受到重力作用沉積在反應空間的一底部;及一下吹管線,連接反應空間,並朝向反應空間的底部;至少一抽氣管線,位於軸封裝置內,流體連接真空腔體的反應空間,並用以抽出反應空間內的一氣體;至少一進氣管線,位於軸封裝置內,流體連接真空腔體的反應空間,並用以將一前驅物氣體輸送至反應空間;及至少一非反應氣體輸送管線,位於軸封裝置內,並用以連接真空腔體的下吹管線,其中非反應氣體輸送管線用以將一非反應氣體經由下吹管線輸送至反應空間,以吹向反應空間的底部。 In order to achieve the above-mentioned purpose, the present invention proposes a powder atomic layer deposition machine with a downward blowing line, including: a driving unit; a shaft sealing device connected to the driving unit; a vacuum chamber connected to the shaft sealing device, the driving unit passing through the shaft The sealing device drives the vacuum cavity to rotate. The vacuum cavity includes: a cover plate and a cavity. An inner surface of the cover plate covers the cavity to form a reaction space between the two. A reaction space is formed on the inner surface of the cover plate. a monitoring wafer, wherein the reaction space is used for accommodating a plurality of powders, and the powders are deposited on a bottom of the reaction space by gravity; and a blow-down line is connected to the reaction space and faces the bottom of the reaction space; The shaft sealing device is fluidly connected to the reaction space of the vacuum chamber and used to extract a gas in the reaction space; at least one intake line is located in the shaft sealing device, fluidly connected to the reaction space of the vacuum chamber, and used to pump a precursor The reactant gas is transported to the reaction space; and at least one non-reactive gas transport line is located in the shaft sealing device and is used to connect the down blowing line of the vacuum chamber, wherein the non-reactive gas transport line is used to pass a non-reactive gas through the down blowing line Transported to the reaction space to blow towards the bottom of the reaction space.
所述的具有下吹管線的粉末原子層沉積機台,其中軸封裝置包括一外管體及一內管體,外管體包括一容置空間用以容置內管體,而內管體則包括至少一連接空間用以容置抽氣管線、進氣管線及非反應氣體輸送管線。 The powder atomic layer deposition machine with blowing down pipeline, wherein the shaft sealing device includes an outer tube body and an inner tube body, the outer tube body includes an accommodating space for accommodating the inner tube body, and the inner tube body Then it includes at least one connection space for accommodating the gas extraction pipeline, the gas inlet pipeline and the non-reactive gas delivery pipeline.
所述的具有下吹管線的粉末原子層沉積機台,其中非反應氣體輸送管線包括一分枝部,分枝部貫穿內管體,並用以連接下吹管線。 In the powder atomic layer deposition machine with down blowing line, the non-reactive gas conveying line includes a branch part, and the branch part penetrates through the inner pipe body and is used for connecting the down blowing line.
所述的具有下吹管線的粉末原子層沉積機台,其中真空腔體或內管體包括一轉接空間,非反應氣體輸送管線經由轉接空間連接下吹管線,轉接空間的一截面積大於非反應氣體輸送管線及下吹管線。 The powder atomic layer deposition machine with down blowing line, wherein the vacuum chamber or inner pipe body includes a transition space, the non-reactive gas conveying pipeline is connected to the down blowing line through the transition space, and a cross-sectional area of the transition space is Larger than the non-reactive gas delivery line and down blow line.
所述的具有下吹管線的粉末原子層沉積機台,其中轉接空間為一環狀體,環繞在內管體的周圍。 In the powder atomic layer deposition machine with down blowing line, the transition space is an annular body, which surrounds the inner tube body.
所述的具有下吹管線的粉末原子層沉積機台,包括一第一密封環位於內管體與真空腔體之間。 The powder atomic layer deposition machine with down blowing line includes a first sealing ring located between the inner pipe body and the vacuum chamber.
所述的具有下吹管線的粉末原子層沉積機台,包括一第二密封環位於外管體與真空腔體之間,其中非反應氣體輸送管線與下吹管線的連接位置位於第一密封環與第二密封環之間。 The powder atomic layer deposition machine with blow-down line includes a second seal ring located between the outer pipe body and the vacuum chamber, wherein the connection position of the non-reactive gas delivery line and the blow-down line is located in the first seal ring and the second sealing ring.
所述的具有下吹管線的粉末原子層沉積機台,包括一延伸管體連接進氣管線,延伸管體位於真空腔體的反應空間內。 The powder atomic layer deposition machine with down blowing line includes an extension pipe body connected to the air inlet line, and the extension pipe body is located in the reaction space of the vacuum chamber.
所述的具有下吹管線的粉末原子層沉積機台,包括至少一固定單元用以將真空腔體固定在軸封裝置上,連接單元解除鎖固後,真空腔體由軸封裝置卸下。 The powder atomic layer deposition machine with down blowing line includes at least one fixing unit for fixing the vacuum chamber on the shaft sealing device. After the connecting unit is unlocked, the vacuum chamber is removed from the shaft sealing device.
10:具有下吹管線的粉末原子層沉積機台 10: Powder atomic layer deposition machine with down blowing line
11:真空腔體 11: Vacuum chamber
111:蓋板 111: Cover
1111:內表面 1111: inner surface
112:固定單元 112: Fixed unit
113:腔體 113: Cavity
114:凹部 114: Recess
115:監控晶圓 115: Monitor Wafers
116:底部 116: Bottom
117:下吹管線 117: Down blow line
12:反應空間 12: Reaction Space
121:粉末 121: Powder
13:軸封裝置 13: Shaft seal device
131:外管體 131: outer tube body
132:容置空間 132: accommodating space
133:內管體 133: inner tube body
134:連接空間 134: Connect Space
139:過濾單元 139: Filter unit
14:齒輪 14: Gear
15:驅動單元 15: Drive unit
161:第一密封環 161: The first sealing ring
163:第二密封環 163: Second sealing ring
171:非反應氣體輸送管線 171: Non-reactive gas delivery line
1711:分枝部 1711: Branches
172:延伸管體 172: Extension tube body
1721:出氣孔 1721: Air vent
173:進氣管線 173: Intake line
175:加熱器 175: Heater
177:抽氣管線 177: Exhaust line
179:溫度感測單元 179: Temperature Sensing Unit
18:轉接空間 18: Transfer space
[圖1]為本新型具有下吹管線的粉末原子層沉積機台一實施例的立體示意體。 [FIG. 1] This is a three-dimensional schematic diagram of an embodiment of a new type of powder atomic layer deposition machine with down blowing line.
[圖2]為本新型具有下吹管線的粉末原子層沉積機台一實施例的剖面示意圖。 Fig. 2 is a schematic cross-sectional view of an embodiment of a new type of powder atomic layer deposition machine with a blow-down line.
[圖3]為本新型具有下吹管線的粉末原子層沉積機台的軸封裝置一實施例的剖面示意圖。 FIG. 3 is a schematic cross-sectional view of an embodiment of a shaft sealing device for a powder atomic layer deposition machine with a down-blowing line.
[圖4]為本新型具有下吹管線的粉末原子層沉積機台又一實施例的剖面示意圖。 FIG. 4 is a schematic cross-sectional view of another embodiment of the novel powder atomic layer deposition machine with down blowing line.
[圖5]為本新型具有下吹管線的粉末原子層沉積機台又一實施例的剖面示意圖。 Fig. 5 is a schematic cross-sectional view of another embodiment of the novel powder atomic layer deposition machine with down blowing line.
[圖6]為本新型具有下吹管線的粉末原子層沉積機台又一實施例的剖面示意圖。 Fig. 6 is a schematic cross-sectional view of another embodiment of the novel powder atomic layer deposition machine with down blowing line.
[圖7]為本新型具有下吹管線的粉末原子層沉積機台又一實施例的剖面示意圖。 FIG. 7 is a schematic cross-sectional view of another embodiment of the novel powder atomic layer deposition machine with down blowing line.
[圖8]為本新型具有下吹管線的粉末原子層沉積機台又一實施例的分解剖面示意圖。 FIG. 8 is a schematic exploded cross-sectional view of another embodiment of the novel powder atomic layer deposition machine with down blowing line.
請參閱圖1、圖2及圖3分別為本新型具有下吹管線的粉末原子層沉積機台一實施例的立體示意圖、剖面示意圖及具有下吹管線的粉末原子層沉積機台的軸封裝置的剖面示意圖。如圖所示,具有下吹管線的粉末原子層沉積機台10主要包括一真空腔體11、一軸封裝置13及一驅動單元15,其中驅動單元15透過軸封裝置13連接並帶動真空腔體11轉動。
Please refer to FIG. 1 , FIG. 2 and FIG. 3 , which are a three-dimensional schematic diagram, a schematic cross-sectional view, and a shaft sealing device of a powder atomic layer deposition machine with a down-blowing line, respectively, according to an embodiment of the new type of powder atomic layer deposition machine with a down-blowing line. cross-sectional schematic diagram. As shown in the figure, the powder atomic
真空腔體11內具有一反應空間12,用以容置複數顆粉末121,其中真空腔體11靜置時,粉末121會受到重力作用沉積在反應空間12的底部。粉末121可以是量子點(Quantum Dot),例如ZnS、CdS、CdSe等II-VI半導體
材料,而形成在量子點上的薄膜可以是三氧化二鋁(Al2O3)。真空腔體11可包括一蓋板111及一腔體113,其中蓋板111的一內表面1111用以覆蓋腔體113,並在兩者之間形成反應空間12。
The
在本新型一實施例中,可於蓋板111的內表面1111設置一監控晶圓115,當蓋板111覆蓋腔體113時,監控晶圓115會位於反應空間12內。在反應空間12內進行原子層沉積時,監控晶圓115的表面會形成薄膜。在實際應用時可進一步量測監控晶圓115表面的薄膜厚度與粉末121表面的薄膜厚度,並計算出兩者之間的關係。而後便可透過量測監控晶圓115表面的薄膜厚度,換算出粉末121表面的薄膜厚度。
In an embodiment of the present invention, a
軸封裝置13包括一外管體131及一內管體133,其中外管體131具有一容置空間132,而內管體133則具有一連接空間134,例如外管體131及內管體133可為空心柱狀體。外管體131的容置空間132用以容置內管體133,其中外管體131及內管體133同軸設置。軸封裝置13可以是一般常見的軸封或磁流體軸封,主要用以隔離真空腔體11的反應空間12與外部的空間,以維持反應空間12的真空。
The
驅動單元15連接軸封裝置13的一端,並透過軸封裝置13帶動真空腔體11轉動,例如透過外管體131連接真空腔體11,並透過外管體131帶動真空腔體11轉動。
The driving
驅動單元15可連接並帶動外管體131及真空腔體11以同一方向持續轉動,例如順時針或逆時針方向持續轉動。在本新型一實施例中,驅動單元15可為馬達,透過至少一齒輪14連接外管體131,並經由齒輪14帶動外管體131及真空腔體11相對於內管體133轉動。
The driving
內管體133的連接空間134內可設置至少一非反應氣體輸送管線171、至少一進氣管線173、一加熱器175、一抽氣管線177及/或一溫度感測單元179,如圖2及圖3所示。
At least one non-reactive
抽氣管線177流體連接真空腔體11的反應空間12,並用以抽出反應空間12內的氣體,使得反應空間12為真空狀態,以進行原子層沉積製程。具體而言抽氣管線177可連接一幫浦,並透過幫浦抽出反應空間12內的氣體。
The
進氣管線173流體連接真空腔體11的反應空間12,並用以將一前驅物氣體或一非反應氣體輸送至反應空間12,其中非反應氣體可以是氮氣或氬氣等惰性氣體。例如進氣管線173可透過閥件組連接一前驅物氣體儲存槽及一非反應氣體儲存槽,並透過閥件組將前驅物氣體輸送至反應空間12內,使得前驅物氣體沉積在粉末121表面。在實際應用時,進氣管線173可能會將一載送氣體(carrier gas)及前驅物氣體一起輸送到反應空間12內。而後透過閥件組將非反應氣體輸送至反應空間12內,並透過抽氣管線177抽氣,以去除反應空間12內的前驅物氣體。在本新型一實施例中,進氣管線173可連接複數個分枝管線,並分別透過各個分枝管線將不同的前驅物氣體依序輸送至反應空間12內。
The
此外進氣管線173可增大輸送至反應空間12的非反應氣體的流量,並透過非反應氣體吹動反應空間12內的粉末121,使得粉末121受到非反應氣體的帶動,而擴散到反應空間12的各個區域。
In addition, the
本新型所述的真空腔體11包括一下吹管線117,其中下吹管線117連接反應空間12,並朝向真空腔體11及反應空間12的底部或側面,例如下
吹管線117可相對於真空腔體11及/或軸封裝置13的軸心傾斜。在本新型一實施例中,反應空間12可近似一圓柱體或多邊形柱狀體,包括兩個底面及一個側面,其中兩個底面彼此面對,而側面則連接兩個底面。
The
非反應氣體輸送管線171用以連接真空腔體11的下吹管線117,並經由下吹管線117將一非反應氣體輸送至反應空間12內,以攪拌反應空間12內的粉末121。具體而言,下吹管線117可用以朝反應空間12的側面及/或底部噴出非反應氣體,由以吹動受到重力作用而沉積在反應空間12的底部的粉末121。
The non-reactive
在本新型一實施例中,非反應氣體輸送管線171的設置方向大致與軸封裝置13的軸向平行,並具有一分枝部1711。分枝部1711靠近內管體133連接真空腔體11的一端,其中分枝部1711貫穿內管體133,並用以連接下吹管線117,例如分枝部1711沿著軸封裝置13的徑向設置。
In an embodiment of the present invention, the disposition direction of the non-reactive
當軸封裝置13的外管體131帶動真空腔體11轉動時,真空腔體11的下吹管線117會相對於軸封裝置13的內管體133及非反應氣體輸送管線171轉動。在本新型一實施例中,當下吹管線117轉動到一特定角度時,下吹管線117才會連接非反應氣體輸送管線171,使得非反應氣體可由非反應氣體輸送管線171輸送至下吹管線117。
When the
在本新型一實施例中,進氣管線173及非反應氣體輸送管線171都可以用以將非反應氣體輸送至反應空間12,其中進氣管線173輸送的非反應氣體的流量較小,主要用以去除反應空間12內的前驅物氣體,而非反應氣體輸送管線171輸送的非反應氣體的流量較大,主要用以吹動反應空間12內的粉末121。
In an embodiment of the present invention, both the
本新型的驅動單元15帶動外管體131及真空腔體11轉動時,內管體133及其內部的非反應氣體輸送管線171、抽氣管線177及進氣管線173不會隨著轉動,有利於提高進氣管線173及/或非反應氣體輸送管線171輸送至反應空間12的非反應氣體及/或前驅物氣體的穩定度。
When the driving
加熱器175用以加熱連接空間134及內管體133,並透過加熱器175加熱內管體133內的抽氣管線177、進氣管線173及/或非反應氣體輸送管線171。溫度感測單元179則用以量測加熱器175或連接空間134的溫度,以得知加熱器175的工作狀態。當然在真空腔體11的內部、外部或周圍通常會設置另一個加熱裝置,其中加熱裝置鄰近或接觸真空腔體11,並用以加熱真空腔體11及反應空間12。
The
在本新型一實施例中,如圖4所示,軸封裝置13及/或真空腔體11之間可設置至少一個密封環,例如第一密封環161及/或第二密封環163,其中非反應氣體輸送管線171與下吹管線117的連接位置位於兩個密封環之間。
In an embodiment of the present invention, as shown in FIG. 4 , at least one sealing ring, such as the
在實際應用時,第一密封環161位於內管體133及真空腔體11之間,而第二密封環163位於外管體131及真空腔體11之間,其中第一密封環161為一動態密封環,而第二密封環163為一靜態密封環。例如第一密封環161可套設在內管體133上,並為鐵氟龍O型環(Teflonoring),而第二密封環163則為橡膠製的O型環。軸封裝置13與真空腔體11之間具有第一及第二密封環161/163僅為本新型一實施例,在不同實施例中軸封裝置13與真空腔體11之間可僅設置第一密封環161,便可達到密封反應空間12的目的。
In practical application, the
在本新型一實施例中,真空腔體11或軸封裝置13之間可設置一過濾單元139,其中設置在內管體133內的抽氣管線177、進氣管線173及/或非反應氣體輸送管線171經由過濾單元139流體連接真空腔體11的反應空間12。
In an embodiment of the present invention, a
在本新型一實施例中,如圖5所示,進氣管線173可由內管體133的連接空間134延伸至真空腔體11的反應空間12,並在真空腔體11的反應空間12內形成一延伸管體172。延伸管體172的端部及/或管壁上可設置至少一出氣孔1721,延伸管體172可經由出氣孔1721將前驅物氣體或非反應氣體輸送至反應空間12。
In an embodiment of the present invention, as shown in FIG. 5 , the
在本新型一實施例中,如圖6所示,非反應氣體輸送管線171及下吹管線117之間可設置一轉接空間18,其中轉接空間18可設置在軸封裝置13的內管體133及/或真空腔體11上,並有利於對位非反應氣體輸送管線171及下吹管線117。轉接空間18的截面積大於非反應氣體輸送管線171及下吹管線117,當真空腔體11相對於軸封裝置13的內管體133轉動時,非反應氣體輸送管線171可經由轉接空間18流體連接下吹管線117。
In an embodiment of the present invention, as shown in FIG. 6 , a
轉接空間18可以是下吹管線117的一部分,使得下吹管線117連接非反應氣體輸送管線171的位置具有較大的截面積,例如下吹管線117連接非反應氣體輸送管線171的一端為喇叭狀。在本新型另一實施例中,轉接空間18可為一環狀體,並環繞在內管體133的周圍,使得設置在內管體133的非反應氣體輸送管線171可經由環狀的轉接空間18持續連接下吹管線117,並經由下吹管線117持續將非反應氣體輸送置反應空間12,例如輸出的非反應氣體會隨著下吹管線117轉動,並吹向反應空間12的不同角度。
The
在本新型一實施例中,如圖7及圖8所示,真空腔體11及軸封裝置13可被設計為兩個獨立的構件。在進行原子層沉積時,如圖7所示,可將真空腔體11連接軸封裝置13,並透過固定單元112固定真空腔體11及軸封裝置13,例如固定單元112為螺絲,使得驅動單元15可透過軸封裝置13帶動真空腔體11轉動。在完成原子層沉積後,可解除固定單元112的鎖固,並將真空腔體11由軸封裝置13上卸下。
In an embodiment of the present invention, as shown in FIG. 7 and FIG. 8 , the
在本新型一實施例中,如圖8所示,真空腔體11的底部116可設置一凹部114,並於凹部114內設置第一密封環161。軸封裝置13的內管體133部分凸出外管體131,並於外管體131連接真空腔體11的底部116的一側設置第二密封環163。
In an embodiment of the present invention, as shown in FIG. 8 , a
凸出的內管體133插入真空腔體11的凹部114時,凸出的內管體133會壓迫凹部114內的第一密封環161,而真空腔體11的底部116或凹部114則會壓迫設置在軸封裝置13的外管體131上的第二密封環163。上述第一密封環161、第二密封環163及/或凹部114的數量及設置位置僅為本新型一具體實施例,並非本新型權利範圍的限制。
When the protruding
在本新型一實施例中,凹部114可由真空腔體11的底部116延伸至反應空間12內,而軸封裝置13的內管體133則由外管體131的容置空間132延伸至外部,並凸出軸封裝置13及外管體131。連接真空腔體11及軸封裝置13時,凸出軸封裝置13的內管體133可用以插入凹部114,其中軸封裝置13的內管體133會由外管體131的容置空間132延伸至真空腔體11的凹部114及/或反應空間12。
In an embodiment of the present invention, the
以上所述者,僅為本新型之一較佳實施例而已,並非用來限定本新型實施之範圍,即凡依本新型申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本新型之申請專利範圍內。 The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included within the scope of the patent application of the present invention.
10:具有下吹管線的粉末原子層沉積機台 10: Powder atomic layer deposition machine with down blowing line
11:真空腔體 11: Vacuum chamber
111:蓋板 111: Cover
1111:內表面 1111: inner surface
113:腔體 113: Cavity
115:監控晶圓 115: Monitor Wafers
117:下吹管線 117: Down blow line
12:反應空間 12: Reaction Space
121:粉末 121: Powder
13:軸封裝置 13: Shaft seal device
131:外管體 131: outer tube body
132:容置空間 132: accommodating space
133:內管體 133: inner tube body
134:連接空間 134: Connect Space
14:齒輪 14: Gear
15:驅動單元 15: Drive unit
171:非反應氣體輸送管線 171: Non-reactive gas delivery line
1711:分枝部 1711: Branches
175:加熱器 175: Heater
177:抽氣管線 177: Exhaust line
Claims (9)
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