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TWM619998U - Shielding device and deposition equipment having shielding device - Google Patents

Shielding device and deposition equipment having shielding device Download PDF

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Publication number
TWM619998U
TWM619998U TW110207561U TW110207561U TWM619998U TW M619998 U TWM619998 U TW M619998U TW 110207561 U TW110207561 U TW 110207561U TW 110207561 U TW110207561 U TW 110207561U TW M619998 U TWM619998 U TW M619998U
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Taiwan
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shielding plate
shielding
plate
reaction chamber
sensing
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TW110207561U
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Chinese (zh)
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林俊成
沈祐德
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天虹科技股份有限公司
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Priority to TW110207561U priority Critical patent/TWM619998U/en
Publication of TWM619998U publication Critical patent/TWM619998U/en

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Abstract

本新型提供一種具有遮蔽裝置的沉積設備,主要包括一反應腔體、一承載盤及一遮蔽裝置,其中部分遮蔽裝置及承載盤位於反應腔體內。遮蔽裝置包括兩個遮蔽板及一驅動裝置,其中驅動裝置連接並驅動兩個遮蔽板朝相反方向擺動。兩個遮蔽板分別包括一彼此面對的側面,其中兩個側面分別設置一凹部及一凸部。在進行沉積製程時,驅動裝置帶動兩個遮蔽板相互遠離,並切換到開啟狀態。在進行清潔製程時,驅動裝置帶動兩個遮蔽板相互靠近,切換為遮蔽狀態,其中一個遮蔽板的凸部會進入另一個遮蔽板的凹部,並可有效的遮蔽承載盤。The present model provides a deposition equipment with a shielding device, which mainly includes a reaction chamber, a supporting tray and a shielding device, wherein part of the shielding device and the carrying tray are located in the reaction chamber. The shielding device includes two shielding plates and a driving device, wherein the driving device is connected and drives the two shielding plates to swing in opposite directions. The two shielding plates respectively include a side surface facing each other, and the two side surfaces are respectively provided with a concave portion and a convex portion. During the deposition process, the driving device drives the two shielding plates to move away from each other and switch to the open state. During the cleaning process, the driving device drives the two shielding plates to approach each other and switch to the shielding state. The convex part of one shielding plate enters the concave part of the other shielding plate and can effectively shield the carrier plate.

Description

遮蔽裝置及具有遮蔽裝置的沉積設備Shielding device and deposition equipment with shielding device

本新型有關於一種具有遮蔽裝置的沉積設備,主要透過遮蔽裝置完整的遮擋承載盤,以避免在清潔處理腔室的過程中汙染承載盤。The present invention relates to a deposition equipment with a shielding device, which mainly completely shields a carrying plate through the shielding device, so as to avoid contamination of the carrying plate in the process of cleaning a processing chamber.

化學氣相沉積(CVD)、物理氣相沉積(PVD)及原子層沉積(ALD)皆是常用的沉積設備,並普遍被使用在積體電路、發光二極體及顯示器等製程中。Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and Atomic Layer Deposition (ALD) are all commonly used deposition equipment, and are commonly used in integrated circuits, light-emitting diodes, and display manufacturing processes.

沉積設備主要包括一腔體及一晶圓承載盤,其中晶圓承載盤位於腔體內,並用以承載至少一晶圓。以物理氣相沉積為例,腔體內需要設置一靶材,其中靶材面對晶圓承載盤上的晶圓。在進行物理氣相沉積時,可將惰性氣體及/或反應氣體輸送至腔體內,分別對靶材及晶圓承載盤施加偏壓,並透過晶圓承載盤加熱承載的晶圓。The deposition equipment mainly includes a cavity and a wafer carrier. The wafer carrier is located in the cavity and used to carry at least one wafer. Taking physical vapor deposition as an example, a target material needs to be set in the cavity, where the target material faces the wafer on the wafer carrier tray. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the cavity, bias voltage is applied to the target and the wafer carrier respectively, and the wafer carried by the wafer carrier is heated through the wafer carrier.

腔體內的惰性氣體因為高壓電場的作用,形成離子化的惰性氣體,離子化的惰性氣體會受到靶材上的偏壓吸引而轟擊靶材。從靶材濺出的靶材原子或分子受到晶圓承載盤上的偏壓吸引,並沉積在加熱的晶圓的表面,以在晶圓的表面形成薄膜。The inert gas in the cavity forms ionized inert gas due to the action of the high-voltage electric field, and the ionized inert gas will be attracted by the bias on the target material and bombard the target material. The target atoms or molecules sputtered from the target are attracted by the bias voltage on the wafer carrier and are deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.

在經過一段時間的使用後,腔體的內表面會形成沉積薄膜,因此需要週期性的清潔腔體,以避免沉積薄膜在製程中掉落,進而汙染晶圓。此外靶材的表面亦可能形成氧化物或其他汙染物,因此同樣需要週期性的清潔靶材。一般而言,通常會透過預燒(burn-in)製程,以電漿離子撞擊腔體內的靶材,以去除靶材表面的氧化物或其他汙染物。After a period of use, a deposited film will be formed on the inner surface of the cavity. Therefore, the cavity needs to be cleaned periodically to prevent the deposited film from falling during the manufacturing process and contaminating the wafer. In addition, oxides or other contaminants may also form on the surface of the target, so it is also necessary to clean the target periodically. Generally speaking, a burn-in process is used to strike a target in the cavity with plasma ions to remove oxides or other contaminants on the surface of the target.

在進行上述清潔腔體及靶材時,需要將腔體內的晶圓承載盤及晶圓取出,或者隔離晶圓承載盤,以避免清潔過程中汙染晶圓承載盤及晶圓。When cleaning the cavity and the target, it is necessary to remove the wafer carrier and the wafer from the cavity or isolate the wafer carrier to avoid contamination of the wafer carrier and wafer during the cleaning process.

一般而言,沉積設備在經過一段時間的使用後,通常需要進行清潔,以去除腔室內沉積的薄膜及靶材上的氧化物或氮化物。在清潔的過程中產生的微粒會汙染承載盤,因此需要隔離承載盤及汙染物。本新型提出一種遮蔽裝置及具有遮蔽裝置的沉積設備,主要透過驅動裝置帶動兩個遮蔽板朝相反方向擺動,使得兩個遮蔽板操作在一開啟狀態及一遮蔽狀態。操作在遮蔽狀態的遮蔽板可完整的遮蔽承載盤,以有效避免清潔腔體或靶材時產生的微粒汙染承載盤。Generally speaking, after a period of use, the deposition equipment usually needs to be cleaned to remove the oxide or nitride on the thin film deposited in the chamber and the target material. The particles generated during the cleaning process will contaminate the carrier plate, so it is necessary to isolate the carrier plate and contaminants. The present invention proposes a shielding device and a deposition device with a shielding device. The driving device drives two shielding plates to swing in opposite directions, so that the two shielding plates are operated in an open state and a shielding state. The shielding plate operated in the shielding state can completely shield the carrier plate, so as to effectively avoid the contamination of the carrier plate by particles generated when cleaning the cavity or the target material.

本新型的一目的,在於提供一種具有遮蔽裝置的沉積設備,主要包括一反應腔體、一承載盤及一遮蔽裝置。遮蔽裝置包括一驅動裝置及兩個遮蔽板,其中驅動裝置連接並驅動兩個遮蔽板分別朝相反方向擺動,使得兩個遮蔽板操作在一開啟狀態及一遮蔽狀態。An object of the present invention is to provide a deposition equipment with a shielding device, which mainly includes a reaction chamber, a supporting plate and a shielding device. The shielding device includes a driving device and two shielding plates, wherein the driving device connects and drives the two shielding plates to swing in opposite directions respectively, so that the two shielding plates operate in an open state and a shielding state.

兩個遮蔽板分別包括一側面,其中兩個遮蔽板的側面相面對,並於兩個遮蔽板相面對的側面上分別設置至少一凹部及至少一凸部。在清潔反應腔體時,驅動裝置帶動兩個遮蔽板以擺動的方式相互靠近,其中一個遮蔽板的側面上的凸部會進入另一個遮蔽板的側面上的凹部,並在兩遮蔽板之間形成一重疊區域,使得兩個遮蔽板構成一個完整的遮蔽構件。在進行沉積製程時,驅動裝置帶動兩個遮蔽板以擺動的方式相互遠離,並可對反應腔體內的基板進行薄膜沉積。The two shielding plates respectively include a side surface, wherein the side surfaces of the two shielding plates face each other, and at least one concave portion and at least one convex portion are respectively provided on the side surfaces of the two shielding plates facing each other. When cleaning the reaction chamber, the driving device drives the two shielding plates to approach each other in a swinging manner, and the convex part on the side of one shielding plate will enter the concave part on the side of the other shielding plate and be between the two shielding plates. An overlapping area is formed so that the two shielding plates constitute a complete shielding member. During the deposition process, the driving device drives the two shielding plates to move away from each other in a swinging manner, and can deposit thin films on the substrate in the reaction chamber.

本新型的一目的,在於提供一種具有遮蔽裝置的沉積設備,主要透過兩個遮蔽板構成一個完整的遮蔽件,可縮小收納遮蔽板需要的空間。在本新型一實施例中,兩個遮蔽板可以在反應腔體的容置空間內進行相反方向的擺動,其中兩個遮蔽板可以在反應腔體的容置空間內操作在開啟狀態或遮蔽狀態,可簡化反應腔體的構造及縮小反應腔體的體積。An object of the present invention is to provide a deposition device with a shielding device, which mainly constitutes a complete shielding member through two shielding plates, which can reduce the space required for storing the shielding plates. In an embodiment of the present invention, the two shielding plates can swing in opposite directions in the accommodating space of the reaction chamber, and the two shielding plates can be operated in the open state or the shielded state in the accommodating space of the reaction chamber. , Can simplify the structure of the reaction chamber and reduce the volume of the reaction chamber.

本新型的一目的,在於提供一種具有遮蔽裝置的沉積設備,其中驅動裝置透過兩個連接臂分別連接及承載兩個遮蔽板,以降低連接臂的負重。此外亦可進一步使用厚度較大的遮蔽板,以防止遮蔽板在清潔沉積設備時發生高溫變形,並有利於提高遮蔽板遮擋承載盤的效果。An object of the present invention is to provide a deposition equipment with a shielding device, wherein the driving device is connected to and carries two shielding plates through two connecting arms respectively, so as to reduce the load of the connecting arms. In addition, a shielding plate with a larger thickness can be further used to prevent high temperature deformation of the shielding plate when cleaning the deposition equipment, and to improve the effect of the shielding plate in shielding the carrier plate.

為了達到上述的目的,本新型提出一種具有遮蔽裝置的沉積設備,包括:一反應腔體,包括一容置空間:一承載盤,位於容置空間內,並用以承載至少一基板;及一遮蔽裝置,包括:一第一遮蔽板,位於容置空間內,並包括一第一內側面,其中第一內側面包括至少一凸部;一第二遮蔽板,位於容置空間內,並包括一第二內側面,其中第二內側面包括至少一凹部,第一內側面的凸部對應第二內側面的凹部;及一驅動裝置,連接第一遮蔽板及第二遮蔽板,並分別驅動第一遮蔽板及第二遮蔽板朝相反的方向擺動,使得第一遮蔽板及第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中遮蔽狀態的第一遮蔽板的第一內側面及第二遮蔽板的第二內側面會相互靠近,而第一內側面上的凸部則會進入第二內側面上的凹部,並以第一遮蔽板及第二遮蔽板遮擋承載盤。In order to achieve the above-mentioned objective, the present invention proposes a deposition device with a shielding device, which includes: a reaction chamber, including an accommodating space: a carrier plate located in the accommodating space, and used to carry at least one substrate; and a shielding The device includes: a first shielding plate located in the accommodating space and including a first inner side surface, wherein the first inner side surface includes at least one convex part; a second shielding plate located in the accommodating space and including a The second inner side surface, wherein the second inner side surface includes at least one concave portion, and the convex portion on the first inner side surface corresponds to the concave portion on the second inner side surface; A shielding plate and a second shielding plate swing in opposite directions, so that the first shielding plate and the second shielding plate are switched between an open state and a shielding state, wherein the first inner surface of the first shielding plate in the shielding state and The second inner side surfaces of the second shielding plate will be close to each other, and the convex portion on the first inner side surface will enter the concave portion on the second inner side surface, and the first and second shielding plates will shield the carrier tray.

本新型提出一種遮蔽裝置,適用於一沉積設備,包括:一第一遮蔽板,包括一第一內側面,其中第一內側面包括至少一凸部;一第二遮蔽板,包括一第二內側面,其中第二內側面包括至少一凹部,第一內側面的凸部對應第二內側面的凹部;及一驅動裝置,連接第一遮蔽板及第二遮蔽板,並分別驅動第一遮蔽板及第二遮蔽板朝相反的方向擺動,使得第一遮蔽板及第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中遮蔽狀態的第一遮蔽板的第一內側面及第二遮蔽板的第二內側面會相互靠近,而第一內側面上的凸部則會進入第二內側面上的凹部。The present model proposes a shielding device suitable for a deposition device, comprising: a first shielding plate including a first inner side surface, wherein the first inner side surface includes at least one convex part; a second shielding plate including a second inner surface Side surface, wherein the second inner side surface includes at least one concave portion, and the convex portion on the first inner side surface corresponds to the concave portion on the second inner side surface; And the second shielding plate swing in opposite directions, so that the first shielding plate and the second shielding plate are switched between an open state and a shielding state, wherein the first inner side surface of the first shielding plate and the second shielding state in the shielding state The second inner side surface of the board will be close to each other, and the convex part on the first inner side surface will enter the concave part on the second inner side surface.

所述的沉積設備及遮蔽裝置,其中驅動裝置包括一軸封裝置及至少一驅動馬達,驅動馬達透過軸封裝置連接第一遮蔽板及第二遮蔽板。In the deposition equipment and the shielding device, the driving device includes a shaft sealing device and at least one driving motor, and the driving motor is connected to the first shielding plate and the second shielding plate through the shaft sealing device.

所述的沉積設備及遮蔽裝置,其中軸封裝置包括一外管體及一軸體,外管體包括一空間用以容置軸體,驅動馬達透過外管體連接第一遮蔽板,透過軸體連接第二遮蔽板,並同步驅動軸體及外管體朝相反的方向轉動。In the deposition equipment and the shielding device, the shaft sealing device includes an outer tube body and a shaft body, the outer tube body includes a space for accommodating the shaft body, the driving motor is connected to the first shielding plate through the outer tube body, and the shaft body The second shielding plate is connected, and the shaft body and the outer tube body are synchronously driven to rotate in opposite directions.

所述的沉積設備及遮蔽裝置,包括兩個感測區連接反應腔體,兩個感測區分別包括一感測空間流體連接容置空間,兩個感測區的厚度小於反應腔體,其中兩個感測區分別設置至少一位置感測單元,用以感測進入感測空間的第一遮蔽板及第二遮蔽板。The deposition equipment and the shielding device include two sensing areas connected to the reaction chamber, the two sensing areas respectively include a sensing space and fluidly connected accommodating space, and the thickness of the two sensing areas is smaller than that of the reaction chamber, wherein At least one position sensing unit is respectively arranged in the two sensing areas to sense the first shielding plate and the second shielding plate entering the sensing space.

所述的沉積設備及遮蔽裝置,包括至少一位置感測單元設置於反應腔體,並用以感測第一遮蔽板及第二遮蔽板的位置。The deposition equipment and the shielding device include at least one position sensing unit arranged in the reaction chamber and used for sensing the positions of the first shielding plate and the second shielding plate.

所述的沉積設備及遮蔽裝置,其中第一遮蔽板的面積大於第二遮蔽板的面積。In the deposition equipment and the shielding device, the area of the first shielding plate is larger than the area of the second shielding plate.

請參閱圖1,為本新型具有遮蔽裝置的沉積設備操作在遮蔽狀態一實施例的側面剖面示意圖。如圖所示,沉積設備10主要包括一反應腔體11、一承載盤13及一遮蔽裝置100,其中反應腔體11包括一容置空間12用以容置承載盤13及部分的遮蔽裝置100。Please refer to FIG. 1, which is a schematic side cross-sectional view of an embodiment of a new deposition device with a shielding device operating in a shielded state. As shown in the figure, the deposition equipment 10 mainly includes a reaction chamber 11, a carrier plate 13 and a shielding device 100. The reaction chamber 11 includes an accommodating space 12 for accommodating the carrier plate 13 and part of the shielding device 100. .

承載盤13位於反應腔體11的容置空間12內,並用以承載至少一基板163。以沉積設備10為物理氣相沉積腔體為例,反應腔體11內設置一靶材161,其中靶材161面對基板163及承載盤13。例如靶材161可設置在反應腔體11的上表面,並朝向位於容置空間12內的承載盤13及/或基板163。The carrier plate 13 is located in the accommodating space 12 of the reaction chamber 11 and is used to carry at least one substrate 163. Taking the deposition device 10 as a physical vapor deposition chamber as an example, a target 161 is set in the reaction chamber 11, wherein the target 161 faces the substrate 163 and the carrier plate 13. For example, the target 161 may be disposed on the upper surface of the reaction chamber 11 and face the carrier plate 13 and/or the substrate 163 in the accommodating space 12.

請配合參閱圖2及圖3,遮蔽裝置100包括一第一遮蔽板151、一第二遮蔽板153及一驅動裝置17,其中第一遮蔽板151及第二遮蔽板153位於容置空間12內。驅動裝置17連接第一遮蔽板151及第二遮蔽板153,並分別驅動第一遮蔽板151及第二遮蔽板153朝相反方向擺動,例如第一遮蔽板151及第二遮蔽板153以驅動裝置17為軸心同步擺動。Please refer to FIGS. 2 and 3 together, the shielding device 100 includes a first shielding plate 151, a second shielding plate 153, and a driving device 17. The first shielding plate 151 and the second shielding plate 153 are located in the accommodating space 12 . The driving device 17 connects the first shielding plate 151 and the second shielding plate 153, and drives the first shielding plate 151 and the second shielding plate 153 to swing in opposite directions, for example, the first shielding plate 151 and the second shielding plate 153 drive the device 17 is the axis swing synchronously.

在本新型一實施例中,驅動裝置17連接一第一連接臂141及一第二連接臂143,並透過第一連接臂141及一第二連接臂143分別連接第一遮蔽板151及第二遮蔽板153,其中驅動裝置17分別透過第一連接臂141及一第二連接臂143帶動第一遮蔽板151及第二遮蔽板153朝相反方向擺動或轉動。In an embodiment of the present invention, the driving device 17 is connected to a first connecting arm 141 and a second connecting arm 143, and is connected to the first shielding plate 151 and the second shielding plate 151 through the first connecting arm 141 and the second connecting arm 143, respectively. The shielding plate 153, wherein the driving device 17 drives the first shielding plate 151 and the second shielding plate 153 to swing or rotate in opposite directions through a first connecting arm 141 and a second connecting arm 143, respectively.

第一遮蔽板151及第二遮蔽板153可為板體,其中第一遮蔽板151及第二遮蔽板153的面積及形狀可為相近,例如第一遮蔽板151及第二遮蔽板153可為半圓形的板體。當驅動裝置17帶動第一遮蔽板151及第二遮蔽板153閉合時,第一遮蔽板151及第二遮蔽板153會相互靠近並形成一圓板狀的遮蔽件15,並透過遮蔽件15遮擋承載盤13及/或基板163。The first shielding plate 151 and the second shielding plate 153 can be plate bodies. The area and shape of the first shielding plate 151 and the second shielding plate 153 can be similar. For example, the first shielding plate 151 and the second shielding plate 153 can be Semi-circular plate body. When the driving device 17 drives the first shielding plate 151 and the second shielding plate 153 to close, the first shielding plate 151 and the second shielding plate 153 will approach each other to form a disc-shaped shielding member 15, and the shielding member 15 shields the load. The disk 13 and/or the substrate 163.

第一遮蔽板151包括一第一內側面1511及至少一第一外側面1513,而第二遮蔽板153則包括一第二內側面1531及至少一第二外側面1533,其中第一遮蔽板151的第一內側面1511面對第二遮蔽板153的第二內側面1531。The first shielding plate 151 includes a first inner side 1511 and at least one first outer side 1513, and the second shielding plate 153 includes a second inner side 1531 and at least one second outer side 1533. The first shielding plate 151 The first inner side 1511 faces the second inner side 1531 of the second shielding plate 153.

第一遮蔽板151的第一內側面1511包括至少一凸部1515,而第二遮蔽板153的第二內側面1531包括至少一凹部1535。第一內側面1511的凸部1515對應第二內側面1531的凹部1535,其中凸部1515的體積略小於凹部1535。如圖4所示,凸部1515位於第一遮蔽板151的第一內側面1511的中間位置,而凹部1535則位於第二遮蔽板153的第二內側面1531的中間位置。如圖6所示,凸部1515位於第一遮蔽板151的第一內側面1511的上方位置,而凹部1535亦位於第二遮蔽板153的第二內側面1531的上方位置。The first inner side 1511 of the first shielding plate 151 includes at least one protrusion 1515, and the second inner side 1531 of the second shielding plate 153 includes at least one recess 1535. The convex portion 1515 of the first inner side surface 1511 corresponds to the concave portion 1535 of the second inner side surface 1531, wherein the volume of the convex portion 1515 is slightly smaller than the concave portion 1535. As shown in FIG. 4, the convex portion 1515 is located at the middle position of the first inner side surface 1511 of the first shielding plate 151, and the concave portion 1535 is located at the middle position of the second inner side surface 1531 of the second shielding plate 153. As shown in FIG. 6, the convex portion 1515 is located above the first inner surface 1511 of the first shielding plate 151, and the concave portion 1535 is also located above the second inner surface 1531 of the second shielding plate 153.

如圖5所示,本新型實施例所述的第一遮蔽板151及第二遮蔽板153操作在遮蔽狀態,可被定義為第一遮蔽板151的第一內側面1511及第二遮蔽板153的第二內側面1531相互靠近,其中操作在遮蔽狀態的第一遮蔽板151的第一內側面1511與第二遮蔽板153的第二內側面1531之間形成一間隙154。As shown in FIG. 5, the first shielding plate 151 and the second shielding plate 153 according to the embodiment of the present invention are operated in the shielding state, which can be defined as the first inner side 1511 of the first shielding plate 151 and the second shielding plate 153 The second inner side surfaces 1531 of each are close to each other, wherein a gap 154 is formed between the first inner side surface 1511 of the first shielding plate 151 operating in the shielding state and the second inner side surface 1531 of the second shielding plate 153.

此外第一遮蔽板151及第二遮蔽板153操作在遮蔽狀態時,第一內側面1511的凸部1515會進入第二內側面1531的凹部1535內,其中凸部1515與凹部1535之間亦會存在間隙154。In addition, when the first shielding plate 151 and the second shielding plate 153 are operated in the shielding state, the convex portion 1515 of the first inner side surface 1511 will enter the concave portion 1535 of the second inner side surface 1531, and the gap between the convex portion 1515 and the concave portion 1535 will also be There is a gap 154.

第一內側面1511及第二內側面1531之間的間隙154距小於一門檻值,例如小於1mm。具體而言,第一遮蔽板151及第二遮蔽板153並不會直接接觸,第一遮蔽板151的凸部1515與第二遮蔽板153的凹部1535亦不會直接接觸,以防止第一遮蔽板151及第二遮蔽板153在接觸過程中產生微粒,而汙染反應腔體11的容置空間12及/或承載盤13。The gap 154 between the first inner side surface 1511 and the second inner side surface 1531 is smaller than a threshold value, for example, smaller than 1 mm. Specifically, the first shielding plate 151 and the second shielding plate 153 do not directly contact, and the convex part 1515 of the first shielding plate 151 and the concave part 1535 of the second shielding plate 153 do not directly contact, so as to prevent the first shielding The plate 151 and the second shielding plate 153 generate particles during the contact process, which contaminate the accommodating space 12 of the reaction chamber 11 and/or the carrier plate 13.

以第一遮蔽板151及第二遮蔽板153為半圓形的板體為例,第一遮蔽板151的第一內側面1511及第二遮蔽板153的第二內側面1531為一直線的側邊,第一遮蔽板151的第一外側面1513及第二遮蔽板153的第二外側面1533及一半圓形或弧形的側邊。Taking the semicircular plate bodies of the first shielding plate 151 and the second shielding plate 153 as an example, the first inner side 1511 of the first shielding plate 151 and the second inner side 1531 of the second shielding plate 153 are straight sides. , The first outer side 1513 of the first shielding plate 151 and the second outer side 1533 of the second shielding plate 153 and semicircular or arc-shaped sides.

上述第一遮蔽板151的第一內側面1511及第二遮蔽板153的第二內側面1531為直線的側邊僅為本新型一實施例,並非本新型權利範圍的限制。在實際應用時,上述第一遮蔽板151的第一內側面1511及第二遮蔽板153的第二內側面1531亦可以是對應的曲線或鋸齒狀側邊。The linear sides of the first inner side surface 1511 of the first shielding plate 151 and the second inner side surface 1531 of the second shielding plate 153 are only an embodiment of the present invention, and are not limited by the scope of rights of the present invention. In practical applications, the first inner side 1511 of the first shielding plate 151 and the second inner side 1531 of the second shielding plate 153 may also be corresponding curved or jagged sides.

此外第一遮蔽板151及第二遮蔽板153的面積及形狀相近,並為半圓形的板體僅為本新型一實施例,並非本新型權利範圍的限制。在實際應用時,第一遮蔽板151及第二遮蔽板153可以是具有不同面積及形狀的板體,亦可為方形、橢圓形或任意幾何形狀的板體,例如第一遮蔽板151的面積可大於第二遮蔽板153的面積。In addition, the area and shape of the first shielding plate 151 and the second shielding plate 153 are similar, and the semicircular plate body is only an embodiment of the present invention, and is not a limitation of the scope of rights of the present invention. In practical applications, the first shielding plate 151 and the second shielding plate 153 can be plates with different areas and shapes, or can be square, elliptical, or any geometrical shape, such as the area of the first shielding plate 151 The area of the second shielding plate 153 may be larger.

在本新型一實施例中,如圖7所示,驅動裝置17包括至少一驅動馬達171及一軸封裝置173,其中驅動馬達171透過軸封裝置173連接第一遮蔽板151及第二遮蔽板153。驅動馬達171位於反應腔體11的容置空間12外,而軸封裝置173則穿過並設置在反應腔體11,其中部分的軸封裝置173位於反應腔體11的容置空間12內。In an embodiment of the present invention, as shown in FIG. 7, the driving device 17 includes at least one driving motor 171 and a shaft sealing device 173, wherein the driving motor 171 is connected to the first shielding plate 151 and the second shielding plate 153 through the shaft sealing device 173 . The driving motor 171 is located outside the accommodating space 12 of the reaction chamber 11, and the shaft sealing device 173 passes through and is disposed in the reaction chamber 11, and part of the shaft sealing device 173 is located in the accommodating space 12 of the reaction chamber 11.

軸封裝置173包括一外管體1731及一軸體1733。外管體1731包括一空間1732用以容置軸體1733,其中外管體1731及軸體1733同軸設置,且外管體1731及軸體1733可相對轉動。外管體1731連接第一連接臂141,並經由第一連接臂141連接並帶動第一遮蔽板151擺動。軸體1733連接第二連接臂143,並經由第二連接臂143連接並帶動第二遮蔽板153擺動。在本新型另一實施例中,軸封裝置173可以是磁流體軸封。The shaft sealing device 173 includes an outer tube body 1731 and a shaft body 1733. The outer tube body 1731 includes a space 1732 for accommodating the shaft body 1733, wherein the outer tube body 1731 and the shaft body 1733 are coaxially arranged, and the outer tube body 1731 and the shaft body 1733 can rotate relatively. The outer tube body 1731 is connected to the first connecting arm 141, and is connected via the first connecting arm 141 to drive the first shielding plate 151 to swing. The shaft 1733 is connected to the second connecting arm 143 and connected via the second connecting arm 143 to drive the second shielding plate 153 to swing. In another embodiment of the present invention, the shaft sealing device 173 may be a magnetic fluid shaft seal.

在本新型一實施例中,如圖7所示,驅動馬達171的數量可為兩個,兩個驅動馬達171分別連接軸封裝置173的外管體1731及軸體1733,並分別驅動外管體1731及軸體1733朝相反方向同步轉動,以透過外管體1731及軸體1733分別帶動第一遮蔽板151及第二遮蔽板153朝不同方向擺動。In an embodiment of the present invention, as shown in FIG. 7, the number of driving motors 171 may be two, and the two driving motors 171 are respectively connected to the outer tube body 1731 and the shaft body 1733 of the shaft sealing device 173, and respectively drive the outer tube The body 1731 and the shaft body 1733 rotate in opposite directions synchronously to drive the first shielding plate 151 and the second shielding plate 153 to swing in different directions through the outer tube body 1731 and the shaft body 1733, respectively.

在本新型另一實施例中,驅動馬達171的數量可為一個,並透過一連動機構經由第一連接臂141及第二連接臂143分別連接及驅動第一遮蔽板151及第二遮蔽板153朝相反方向同步擺動。In another embodiment of the present invention, the number of the driving motor 171 may be one, and the first shielding plate 151 and the second shielding plate 153 are respectively connected and driven by a linkage mechanism through the first connecting arm 141 and the second connecting arm 143 Swing synchronously in the opposite direction.

具體而言,本新型的沉積設備10及/或遮蔽裝置100可操作在兩種狀態,分別是開啟狀態及遮蔽狀態。如圖2及圖9所示,驅動裝置17可驅動第一遮蔽板151及第二遮蔽板153朝相反方向擺動,使得第一遮蔽板151及第二遮蔽板153相互遠離,並操作在開啟狀態。操作在開啟狀態的第一遮蔽板151及第二遮蔽板153之間會形成一間隔空間152,使得靶材161與承載盤13及基板163之間不存在第一遮蔽板151及第二遮蔽板153。Specifically, the deposition apparatus 10 and/or the shielding device 100 of the present invention can be operated in two states, namely an open state and a shielded state. As shown in FIGS. 2 and 9, the driving device 17 can drive the first shielding plate 151 and the second shielding plate 153 to swing in opposite directions, so that the first shielding plate 151 and the second shielding plate 153 are separated from each other and operated in the open state . A space 152 is formed between the first shielding plate 151 and the second shielding plate 153 operating in the open state, so that there is no first shielding plate 151 and second shielding plate between the target 161 and the carrier plate 13 and the substrate 163 153.

而後可驅動承載盤13及基板163朝靶材161的方向靠近,並透過容置空間12內的氣體,例如惰性氣體,撞擊靶材161,以在基板163的表面沉積薄膜。Then, the carrier plate 13 and the substrate 163 can be driven to approach the target 161, and the gas in the accommodating space 12, such as an inert gas, strikes the target 161 to deposit a thin film on the surface of the substrate 163.

在本新型一實施例中,如圖1所示,反應腔體11的容置空間12可設置一擋件111,其中擋件111的一端連接反應腔體11,而擋件111的另一端則形成一開口112。承載盤13朝靶材161靠近時,會進入或接觸擋件111形成的開口112。反應腔體11、承載盤13及擋件111會在容置空間12內區隔出一反應空間,並在反應空間內的基板163表面沉積薄膜,防止在反應空間外的反應腔體11及承載盤13的表面形成沉積薄膜。In an embodiment of the present invention, as shown in FIG. 1, the accommodating space 12 of the reaction chamber 11 may be provided with a stopper 111, wherein one end of the stopper 111 is connected to the reaction chamber 11, and the other end of the stopper 111 is An opening 112 is formed. When the carrier plate 13 approaches the target 161, it enters or contacts the opening 112 formed by the stopper 111. The reaction chamber 11, the carrier plate 13 and the stopper 111 partition a reaction space in the accommodating space 12, and deposit a thin film on the surface of the substrate 163 in the reaction space to prevent the reaction chamber 11 and the carrier from being outside the reaction space. A deposited film is formed on the surface of the disk 13.

此外,如圖3及圖9所示,驅動裝置17可驅動第一遮蔽板151及第二遮蔽板153朝相反方向擺動,使得第一遮蔽板151及第二遮蔽板153相互靠近,並操作在遮蔽狀態。閉合的第一遮蔽板151及第二遮蔽板153可形成遮蔽件15,其中遮蔽件15會位在靶材161與承載盤13之間,並用以遮蔽承載盤13以隔離靶材161及承載盤13。In addition, as shown in FIGS. 3 and 9, the driving device 17 can drive the first shielding plate 151 and the second shielding plate 153 to swing in opposite directions, so that the first shielding plate 151 and the second shielding plate 153 are close to each other and operate at Covered state. The closed first shielding plate 151 and the second shielding plate 153 can form the shielding member 15, wherein the shielding member 15 is located between the target 161 and the carrier plate 13, and is used to shield the carrier plate 13 to isolate the target material 161 and the carrier plate 13.

遮蔽件15可在容置空間12內區隔一清潔空間121,其中清潔空間121與反應空間的區域部分重疊或相近。可在清潔空間121內進行預燒(burn-in)製程,以清潔靶材161及清潔空間121內的反應腔體11及/或擋件111,並去除靶材161表面的氧化物、氮化物或其他汙染物,及反應腔體11及/或擋件111表面的沉積薄膜。The shielding member 15 may partition a clean space 121 in the accommodating space 12, wherein the clean space 121 and the reaction space partially overlap or are close to each other. A burn-in process can be performed in the clean space 121 to clean the target 161 and the reaction chamber 11 and/or the stopper 111 in the clean space 121, and to remove oxides and nitrides on the surface of the target 161 Or other contaminants, and the deposition film on the surface of the reaction chamber 11 and/or the stopper 111.

在清潔沉積設備10的過程中,承載盤13及/或基板163會被遮蔽件15遮擋或隔離,以避免清潔過程中產生的物質汙染或沉積在承載盤13及/或基板163的表面。In the process of cleaning the deposition apparatus 10, the carrier plate 13 and/or the substrate 163 will be shielded or isolated by the shielding member 15 to avoid contamination or deposition on the surface of the carrier plate 13 and/or the substrate 163 by substances generated during the cleaning process.

具體而言,本新型透過第一遮蔽板151及第二遮蔽板153構成遮蔽件15,並透過第一連接臂141及第二連接臂143分別承載第一遮蔽板151及第二遮蔽板153的重量,可降低第一連接臂141及第二連接臂143的負擔。Specifically, the present invention constitutes the shield 15 through the first shielding plate 151 and the second shielding plate 153, and carries the first shielding plate 151 and the second shielding plate 153 through the first connecting arm 141 and the second connecting arm 143, respectively. The weight can reduce the burden of the first connecting arm 141 and the second connecting arm 143.

此外,亦可進一步增加第一遮蔽板151及第二遮蔽板153的厚度或重量,以避免第一及第二遮蔽板151/153在清潔沉積設備10的過程中發生高溫變形,可防止清潔過程中的電漿或汙染通過變形的第一遮蔽板151及第二遮蔽板153接觸下方的承載盤13或基板163。In addition, the thickness or weight of the first shielding plate 151 and the second shielding plate 153 can be further increased to prevent the first and second shielding plates 151/153 from being deformed at high temperature during the cleaning of the deposition equipment 10, which can prevent the cleaning process Plasma or contamination in the battery contacts the lower carrier plate 13 or the substrate 163 through the deformed first shielding plate 151 and the second shielding plate 153.

將遮蔽件15區分成兩個可相互連接及分離的第一遮蔽板151及第二遮蔽板153,更有利於縮小開啟狀態下的第一遮蔽板151及第二遮蔽板153需要的收納空間,並可簡化或調整反應腔體11的構造。Dividing the shielding member 15 into two first shielding plate 151 and second shielding plate 153 that can be connected and separated is more conducive to reducing the storage space required by the first shielding plate 151 and the second shielding plate 153 in the open state. The structure of the reaction chamber 11 can be simplified or adjusted.

在本新型一實施例中,如圖8及圖9所示,第一遮蔽板151及第二遮蔽板153可以在反應腔體11的容置空間12內操作在開啟狀態及遮蔽狀態,而不需要額外設置一個或多個儲存腔體來儲存開啟狀態的遮蔽板。例如可使得反應腔體11及/容置空間12的體積略大於原本的體積,便可使得第一遮蔽板151及第二遮蔽板153在反應腔體11的容置空間12內開啟或閉合。In an embodiment of the present invention, as shown in FIGS. 8 and 9, the first shielding plate 151 and the second shielding plate 153 can be operated in the open state and the shielded state in the accommodating space 12 of the reaction chamber 11, and not One or more storage cavities need to be additionally provided to store the shielding plate in the open state. For example, the volume of the reaction chamber 11 and/or the accommodating space 12 can be slightly larger than the original volume, so that the first shielding plate 151 and the second shielding plate 153 can be opened or closed in the accommodating space 12 of the reaction chamber 11.

在本新型一實施例中,可進一步在反應腔體11上設置複數個位置感測單元19,其中位置感測單元19朝向容置空間12,並用以感測第一遮蔽板151及第二遮蔽板153的位置,以判斷第一遮蔽板151及第二遮蔽板153是否處在開啟狀態。例如位置感測單元19可以是光感測單元。In an embodiment of the present invention, a plurality of position sensing units 19 may be further provided on the reaction chamber 11, wherein the position sensing units 19 face the accommodating space 12 and are used to sense the first shielding plate 151 and the second shielding The position of the plate 153 is used to determine whether the first shielding plate 151 and the second shielding plate 153 are in the open state. For example, the position sensing unit 19 may be a light sensing unit.

在實際應用時,可調整位置感測單元19的位置,其中第一遮蔽板151及第二遮蔽板153開啟到特定角度後才會被位置感測單元19所感測。而後承載盤13才能朝靶材161的方向靠近,以避免承載盤13、第一遮蔽板151及第二遮蔽板153發生碰撞。In practical applications, the position of the position sensing unit 19 can be adjusted, and the first shielding plate 151 and the second shielding plate 153 will be sensed by the position sensing unit 19 only after opening to a specific angle. Only then can the carrier plate 13 approach the target 161 to avoid the carrier plate 13, the first shielding plate 151 and the second shielding plate 153 from colliding.

在實際應用時可依據沉積設備10上其他機構或動線的配置,調整遮蔽裝置100在反應腔體11的位置。以反應腔體11的容置空間12為四方體為例,如圖8及圖9所示,遮蔽裝置100的驅動裝置17可設置在反應腔體11及/或容置空間12的側邊。如圖10所示,遮蔽裝置100的驅動裝置17亦可設置在反應腔體11/或容置空間12的角落,以利於在反應腔11的側邊設置基板進料口及抽氣管線等機構。In practical applications, the position of the shielding device 100 in the reaction chamber 11 can be adjusted according to the configuration of other mechanisms or moving lines on the deposition device 10. Taking the accommodating space 12 of the reaction chamber 11 as a square as an example, as shown in FIG. 8 and FIG. As shown in FIG. 10, the driving device 17 of the shielding device 100 can also be arranged at the corner of the reaction chamber 11/or the accommodating space 12, so as to facilitate the installation of substrate feed ports and exhaust pipes on the side of the reaction chamber 11 .

在本新型一實施例中,反應腔體11可連接兩個感測區113,其中感測區113凸出反應腔體11的側表面,且感測區113的厚度小於反應腔體11。兩個感測區113分別包括一感測空間120,且感測區113的感測空間120流體連接反應腔體11的容置空間12,其中感測空間120的厚度或高度小於容置空間12。當第一遮蔽板151及第二遮蔽板153操作在開啟狀態時,部分的第一遮蔽板151及部分的第二遮蔽板153會分別進入流體連接容置空間12的兩個感測空間120,其中位於感測空間120內的第一遮蔽板151及第二遮蔽板153的面積小於位於容置空間12內的第一遮蔽板151及第二遮蔽板153的面積。In an embodiment of the present invention, the reaction cavity 11 can be connected to two sensing areas 113, wherein the sensing area 113 protrudes from the side surface of the reaction cavity 11, and the thickness of the sensing area 113 is smaller than that of the reaction cavity 11. The two sensing regions 113 respectively include a sensing space 120, and the sensing space 120 of the sensing region 113 is fluidly connected to the accommodating space 12 of the reaction chamber 11, wherein the thickness or height of the sensing space 120 is smaller than the accommodating space 12 . When the first shielding plate 151 and the second shielding plate 153 are operated in the open state, part of the first shielding plate 151 and part of the second shielding plate 153 will respectively enter the two sensing spaces 120 fluidly connected to the accommodation space 12. The area of the first shielding plate 151 and the second shielding plate 153 located in the sensing space 120 is smaller than the area of the first shielding plate 151 and the second shielding plate 153 located in the accommodating space 12.

如圖10所示,兩個感測區113分別設置在反應腔體11相鄰的兩個側邊,並於兩個感測區113上分別設置至少一位置感測單元19,分別用以感測進入感測空間120的第一遮蔽板151及第二遮蔽板153。As shown in FIG. 10, two sensing areas 113 are respectively provided on two adjacent sides of the reaction chamber 11, and at least one position sensing unit 19 is respectively provided on the two sensing areas 113 for sensing respectively The first shielding plate 151 and the second shielding plate 153 that enter the sensing space 120 are detected.

以上所述者,僅為本新型之一較佳實施例而已,並非用來限定本新型實施之範圍,即凡依本新型申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本新型之申請專利範圍內。The foregoing is only one of the preferred embodiments of the present invention, and is not used to limit the scope of implementation of the present invention, that is, all the equivalent changes and changes in the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention Modifications should be included in the scope of the patent application for this new model.

10:沉積設備 100:遮蔽裝置 11:反應腔體 111:擋件 112:開口 113:感測區 12:容置空間 120:感測空間 121:清潔空間 13:承載盤 141:第一連接臂 143:第二連接臂 15:遮蔽件 151:第一遮蔽板 1511:第一內側面 1513:第一外側面 1515:凸部 152:間隔空間 153:第二遮蔽板 1531:第二內側面 1533:第二外側面 1535:凹部 154:間隙 161:靶材 163:基板 17:驅動裝置 171:驅動馬達 173:軸封裝置 1731:外管體 1732:空間 1733:軸體 19:位置感測單元10: Deposition equipment 100: Shading device 11: Reaction chamber 111: stop 112: opening 113: Sensing area 12: accommodating space 120: Sensing Space 121: clean space 13: Carrier plate 141: First connecting arm 143: second connecting arm 15: Shield 151: The first shielding board 1511: first inner side 1513: first outer side 1515: convex 152: Interval 153: The second shielding board 1531: second inner side 1533: second outer side 1535: recess 154: Gap 161: Target 163: Substrate 17: Drive 171: drive motor 173: Shaft seal device 1731: Outer tube body 1732: space 1733: Shaft 19: Position sensing unit

[圖1]為本新型具有遮蔽裝置的沉積設備操作在遮蔽狀態一實施例的側面剖面示意圖。[Fig. 1] is a schematic side sectional view of an embodiment of a new type of deposition equipment with a shielding device operating in a shielded state.

[圖2]為本新型沉積設備的遮蔽裝置操作在開啟狀態一實施例的立體示意圖。[Figure 2] is a three-dimensional schematic diagram of an embodiment of the shielding device of the new deposition equipment operating in an open state.

[圖3]為本新型沉積設備的遮蔽裝置操作在遮蔽狀態一實施例的立體示意圖。[Figure 3] is a three-dimensional schematic diagram of an embodiment of the shielding device of the new deposition equipment operating in the shielding state.

[圖4]為本新型遮蔽裝置未操作在遮蔽狀態一實施例的部分放大剖面示意圖。[Fig. 4] is a partial enlarged cross-sectional schematic diagram of an embodiment of the new-type shielding device not operating in the shielding state.

[圖5]為本新型遮蔽裝置操作在遮蔽狀態一實施例的部分放大剖面示意圖。[Figure 5] is a partial enlarged cross-sectional schematic diagram of an embodiment of the new type of shielding device operating in the shielding state.

[圖6]為本新型遮蔽裝置未操作在遮蔽狀態又一實施例的部分放大剖面示意圖。[Fig. 6] is a schematic partial enlarged cross-sectional view of another embodiment of the new shielding device not operating in the shielding state.

[圖7]為本新型遮蔽裝置的驅動裝置一實施例的立體剖面示意圖。[Fig. 7] is a three-dimensional cross-sectional schematic diagram of an embodiment of the driving device of the new type of shielding device.

[圖8]為本新型具有遮蔽裝置的沉積設備操作在開啟狀態一實施例的俯視圖。[Fig. 8] is a top view of an embodiment of a deposition device with a shielding device operating in an open state.

[圖9]為本新型具有遮蔽裝置的沉積設備操作在遮蔽狀態一實施例的俯視圖。[Fig. 9] is a top view of an embodiment of the new deposition equipment with a shielding device operating in a shielded state.

[圖10]為本新型具有遮蔽裝置的沉積設備操作在開啟狀態又一實施例的俯視圖。[Fig. 10] is a top view of another embodiment of the deposition device with a shielding device operating in an open state.

10:沉積設備 10: Deposition equipment

100:遮蔽裝置 100: Shading device

11:反應腔體 11: Reaction chamber

111:擋件 111: stop

112:開口 112: opening

12:容置空間 12: accommodating space

121:清潔空間 121: clean space

13:承載盤 13: Carrier plate

141:第一連接臂 141: First connecting arm

143:第二連接臂 143: second connecting arm

15:遮蔽件 15: Shield

151:第一遮蔽板 151: The first shielding board

153:第二遮蔽板 153: The second shielding board

161:靶材 161: Target

163:基板 163: Substrate

17:驅動裝置 17: Drive

Claims (10)

一種具有遮蔽裝置的沉積設備,包括: 一反應腔體,包括一容置空間; 一承載盤,位於該容置空間內,並用以承載至少一基板; 一擋件,該擋件的一端連接該反應腔體,而該擋件的另一端則形成一開口;及 一遮蔽裝置,包括: 一第一遮蔽板,位於該容置空間內,並包括一第一內側面,其中該第一內側面包括至少一凸部; 一第二遮蔽板,位於該容置空間內,並包括一第二內側面,其中該第二內側面包括至少一凹部,該第一內側面的該凸部對應該第二內側面的該凹部;及 一驅動裝置,連接該第一遮蔽板及該第二遮蔽板,並分別驅動該第一遮蔽板及該第二遮蔽板朝相反的方向擺動,使得該第一遮蔽板及該第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中該遮蔽狀態的該第一遮蔽板的該第一內側面及該第二遮蔽板的該第二內側面會相互靠近,而該第一內側面上的該凸部則會進入該第二內側面上的該凹部,並以該第一遮蔽板及該第二遮蔽板遮擋該承載盤。 A deposition equipment with a shielding device, including: A reaction chamber, including an accommodating space; A carrying tray located in the accommodating space and used for carrying at least one substrate; A block, one end of the block is connected to the reaction chamber, and the other end of the block forms an opening; and A shielding device, including: A first shielding plate located in the accommodating space and including a first inner side surface, wherein the first inner side surface includes at least one convex portion; A second shielding plate is located in the accommodating space and includes a second inner side surface, wherein the second inner side surface includes at least one concave portion, and the convex portion of the first inner side surface corresponds to the concave portion of the second inner side surface ;and A driving device connects the first shielding plate and the second shielding plate, and drives the first shielding plate and the second shielding plate to swing in opposite directions, so that the first shielding plate and the second shielding plate are at Switch between an open state and a shielding state, wherein the first inner side surface of the first shielding plate in the shielding state and the second inner side surface of the second shielding plate are close to each other, and the first inner side surface The protruding part enters the concave part on the second inner side surface, and the carrier tray is covered by the first shielding plate and the second shielding plate. 如請求項1所述的具有遮蔽裝置的沉積設備,其中該驅動裝置包括一軸封裝置及至少一驅動馬達,該驅動馬達透過該軸封裝置連接該第一遮蔽板及該第二遮蔽板。The deposition apparatus with a shielding device according to claim 1, wherein the driving device includes a shaft sealing device and at least one driving motor, and the driving motor is connected to the first shielding plate and the second shielding plate through the shaft sealing device. 如請求項2所述的具有遮蔽裝置的沉積設備,其中該軸封裝置包括一外管體及一軸體,該外管體包括一空間用以容置該軸體,該驅動馬達透過該外管體連接該第一遮蔽板,透過該軸體連接該第二遮蔽板,並同步驅動該軸體及該外管體朝相反的方向轉動。The deposition apparatus with a shielding device according to claim 2, wherein the shaft sealing device includes an outer tube body and a shaft body, the outer tube body includes a space for accommodating the shaft body, and the driving motor penetrates the outer tube The body is connected to the first shielding plate, the second shielding plate is connected through the shaft body, and the shaft body and the outer tube body are synchronously driven to rotate in opposite directions. 如請求項1所述的具有遮蔽裝置的沉積設備,包括兩個感測區連接該反應腔體,該兩個感測區分別包括一感測空間流體連接該容置空間,該兩個感測區的厚度小於該反應腔體,其中該兩個感測區分別設置至少一位置感測單元,用以感測進入該感測空間的該第一遮蔽板及該第二遮蔽板。The deposition apparatus with a shielding device according to claim 1, comprising two sensing areas connected to the reaction chamber, the two sensing areas respectively include a sensing space fluidly connected to the accommodating space, the two sensing areas The thickness of the zone is smaller than that of the reaction chamber, wherein the two sensing zones are respectively provided with at least one position sensing unit for sensing the first shielding plate and the second shielding plate entering the sensing space. 如請求項1所述的具有遮蔽裝置的沉積設備,包括至少一位置感測單元設置於該反應腔體,並用以感測該第一遮蔽板及該第二遮蔽板的位置。The deposition equipment with a shielding device according to claim 1, comprising at least one position sensing unit disposed in the reaction chamber and used for sensing the positions of the first shielding plate and the second shielding plate. 如請求項1所述的具有遮蔽裝置的沉積設備,其中該第一遮蔽板的面積大於該第二遮蔽板的面積。The deposition apparatus with a shielding device according to claim 1, wherein the area of the first shielding plate is larger than the area of the second shielding plate. 一種遮蔽裝置,適用於一沉積設備,包括: 一第一遮蔽板,包括一第一內側面,其中該第一內側面包括至少一凸部; 一第二遮蔽板,包括一第二內側面,其中該第二內側面包括至少一凹部,該第一內側面的該凸部對應該第二內側面的該凹部;及 一驅動裝置,連接該第一遮蔽板及該第二遮蔽板,並分別驅動該第一遮蔽板及該第二遮蔽板朝相反的方向擺動,使得該第一遮蔽板及該第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中該遮蔽狀態的該第一遮蔽板的該第一內側面及該第二遮蔽板的該第二內側面會相互靠近,而該第一內側面上的該凸部則會進入該第二內側面上的該凹部,且該凸部與該凹部之間具有一間隙。 A shielding device suitable for a deposition equipment, including: A first shielding plate including a first inner side surface, wherein the first inner side surface includes at least one convex portion; A second shielding plate including a second inner side surface, wherein the second inner side surface includes at least one concave portion, and the convex portion of the first inner side surface corresponds to the concave portion of the second inner side surface; and A driving device connects the first shielding plate and the second shielding plate, and drives the first shielding plate and the second shielding plate to swing in opposite directions, so that the first shielding plate and the second shielding plate are at Switch between an open state and a shielding state, wherein the first inner side surface of the first shielding plate in the shielding state and the second inner side surface of the second shielding plate are close to each other, and the first inner side surface The protruding portion enters the recessed portion on the second inner surface, and there is a gap between the protruding portion and the recessed portion. 如請求項7所述的遮蔽裝置,其中該驅動裝置包括一軸封裝置及至少一驅動馬達,該驅動馬達透過該軸封裝置連接該第一遮蔽板及該第二遮蔽板。The shielding device according to claim 7, wherein the driving device includes a shaft sealing device and at least one driving motor, and the driving motor is connected to the first shielding plate and the second shielding plate through the shaft sealing device. 如請求項8所述的遮蔽裝置,其中該軸封裝置包括一外管體及一軸體,該外管體包括一空間用以容置該軸體,該驅動馬達透過該外管體連接該第一遮蔽板,透過該軸體連接該第二遮蔽板,並同步驅動該軸體及該外管體朝相反的方向轉動。The shielding device according to claim 8, wherein the shaft sealing device includes an outer tube body and a shaft body, the outer tube body includes a space for accommodating the shaft body, and the driving motor is connected to the second shaft through the outer tube body. A shielding plate is connected to the second shielding plate through the shaft body, and synchronously driving the shaft body and the outer tube body to rotate in opposite directions. 如請求項7所述的遮蔽裝置,其中該第一遮蔽板的面積大於該第二遮蔽板的面積。The shielding device according to claim 7, wherein the area of the first shielding plate is larger than the area of the second shielding plate.
TW110207561U 2021-06-29 2021-06-29 Shielding device and deposition equipment having shielding device TWM619998U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116254516A (en) * 2021-12-09 2023-06-13 天虹科技股份有限公司 Shielding device and thin film deposition machine with shielding device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116254516A (en) * 2021-12-09 2023-06-13 天虹科技股份有限公司 Shielding device and thin film deposition machine with shielding device
CN116254516B (en) * 2021-12-09 2025-10-31 天虹科技股份有限公司 Shielding device and thin film deposition machine with same

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