TWM665748U - Substrate for a reflective film structure with heat-resistant bending crack resistance - Google Patents
Substrate for a reflective film structure with heat-resistant bending crack resistance Download PDFInfo
- Publication number
- TWM665748U TWM665748U TW113208725U TW113208725U TWM665748U TW M665748 U TWM665748 U TW M665748U TW 113208725 U TW113208725 U TW 113208725U TW 113208725 U TW113208725 U TW 113208725U TW M665748 U TWM665748 U TW M665748U
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- reflective film
- layer
- reflective
- film structure
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000005452 bending Methods 0.000 title claims abstract description 31
- 238000005336 cracking Methods 0.000 claims abstract description 27
- 230000000694 effects Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 75
- 239000010408 film Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 3
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 3
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
Abstract
一種具抗熱彎曲破裂的反射膜結構之基板,包含:一基材、一輔助層及一反射層,基材具支撐作用,基材上設置一輔助層,輔助層上設置一反射膜,以形成一反射層結構,其中,反射膜外側為入光面。藉此,可應用輔助層結構提高反射膜的抵抗熱彎曲時破裂的性能,也能利用基板的反射膜結構,增加由入光面進入基板內的光線的反射效果。A substrate with a reflective film structure that resists thermal bending and cracking includes: a substrate, an auxiliary layer and a reflective layer, wherein the substrate has a supporting function, an auxiliary layer is disposed on the substrate, and a reflective film is disposed on the auxiliary layer to form a reflective layer structure, wherein the outer side of the reflective film is a light incident surface. Thus, the auxiliary layer structure can be used to improve the reflective film's resistance to cracking during thermal bending, and the reflective film structure of the substrate can also be used to increase the reflection effect of light entering the substrate from the light incident surface.
Description
本創作是關於一種基板,特別是有關於一種具有抗熱彎曲破裂的反射膜結構之基板。This invention relates to a substrate, and in particular to a substrate having a reflective film structure that is resistant to thermal bending and cracking.
在各種光學、光學元件和太陽能電池設備中,界面內的反射效果會大地影響性能,為了能充分留住並利用進入上述光電設備的光,在設備的入光界面,例如玻璃的基材(91)上,利用高溫製程工藝鍍上反射膜(92)塗層,如圖1之具有反射膜及基材的基板之剖面圖所示。In various optical devices, optical components and solar cell devices, the reflection effect within the interface will greatly affect the performance. In order to fully retain and utilize the light entering the above-mentioned optoelectronic devices, a reflective film (92) is coated on the light-incident interface of the device, such as a glass substrate (91), using a high-temperature process, as shown in the cross-sectional view of the substrate with a reflective film and a substrate in Figure 1.
由於基材(91)與反射膜(92)之間的熱能與應力成長的差異,使得反射膜塗層會產生殘留應力的問題,而在玻璃的基材(91)上沉積薄膜時,因為基材(91)與薄膜兩者之間的熱膨脹差別,更產生了熱應力的起源,也因為有殘留應力的產生,使得成長的薄膜會有破壞裂痕的情形發生,因為在高溫的沉積過程中,溫度所引發的熱張力大於薄膜的抗拉應力,使得裂痕成長。習用解決上述問題的方法可透過調整製程參數範圍,來降低裂痕的成長,但這種解決方式會對反射模材料的選擇造成限制。Due to the difference in heat energy and stress growth between the substrate (91) and the reflective film (92), the reflective film coating will produce residual stress. When the thin film is deposited on the glass substrate (91), the difference in thermal expansion between the substrate (91) and the thin film will generate the origin of thermal stress. Due to the generation of residual stress, the growing thin film will have destructive cracks. During the high-temperature deposition process, the thermal tension caused by the temperature is greater than the tensile stress of the thin film, causing the cracks to grow. The method used to solve the above problem can reduce the growth of cracks by adjusting the process parameter range, but this solution will limit the selection of reflective mold materials.
另外,上述光電設備之玻璃的基材(91)常常會安裝於曲面上,因此需配合將基材(91)彎曲成曲面或直接生產曲面基材(91)的需求,以彎曲基材(91)而言,在將具有反射膜(92)的基材(91)進行熱彎曲加工,而由於玻璃的基材(91)熱彎曲後,在熱彎曲曲率小於一定半徑後,由於在基材(91)彎曲時,反射膜(92)的鍍膜層不伸展,因而會使在基材反射膜(91)彎曲面外側的反射膜(92)鍍膜層產生明顯的張力裂紋的情形,容易導致該反射膜(92)破裂。In addition, the glass substrate (91) of the above-mentioned optoelectronic device is often installed on a curved surface, so it is necessary to bend the substrate (91) into a curved surface or directly produce a curved substrate (91). As for the bent substrate (91), the substrate (91) with the reflective film (92) is subjected to a heat bending process. Since the glass substrate (91) is heat-bent, after the heat bending curvature is less than a certain radius, the coating layer of the reflective film (92) does not stretch when the substrate (91) is bent, and thus obvious tension cracks will be generated in the coating layer of the reflective film (92) on the outer side of the curved surface of the substrate reflective film (91), which can easily cause the reflective film (92) to rupture.
有鑑於此,先前技術確實仍有加以改善之必要。In view of this, the prior art still needs to be improved.
本創作之目的在於提供一種具抗熱彎曲破裂的反射膜結構之基板,以改良先前技術之缺點。The purpose of this invention is to provide a substrate with a reflective film structure that is resistant to thermal bending and cracking, so as to improve the shortcomings of the prior art.
本創作之另一目的在於提供一種具抗熱彎曲破裂的反射膜結構之基板,可提高反射膜的抵抗熱彎曲時破裂的性能。Another purpose of the present invention is to provide a substrate with a reflective film structure that is resistant to thermal bending and cracking, which can improve the reflective film's ability to resist cracking during thermal bending.
本創作之另一目的在於提供一種具抗熱彎曲破裂的反射膜結構之基板,可藉由形成結構體後再進行熱製程,增加反射膜結構的反射效果。Another purpose of this invention is to provide a substrate with a reflective film structure that is resistant to thermal bending and cracking, which can increase the reflective effect of the reflective film structure by performing a thermal process after forming the structure.
為達上述及其他之目的,本創作提供一種具抗熱彎曲破裂的反射膜結構之基板。To achieve the above and other purposes, the present invention provides a substrate having a reflective film structure that is resistant to thermal bending and cracking.
為達成上述及其他目的,本創作之具抗熱彎曲破裂的反射膜結構之基板,包含:一基材;一輔助層(buffer layer),設置於該基材上;及一反射層,設置於該輔助層上形成反射膜,其中,該反射膜外側為入光面。To achieve the above and other purposes, the present invention provides a substrate with a reflective film structure that is resistant to thermal bending and cracking, comprising: a substrate; a buffer layer disposed on the substrate; and a reflective layer disposed on the buffer layer to form a reflective film, wherein the outer side of the reflective film is a light incident surface.
在一實施例中,該反射層為多層反射膜。In one embodiment, the reflective layer is a multi-layer reflective film.
在一實施例中,該多層反射膜為基數層或偶數層。In one embodiment, the multi-layer reflective film is a base number layer or an even number layer.
在一實施例中,該多層反射膜包含重覆交錯堆疊之數個高折射率層及數個低折射率層。In one embodiment, the multi-layer reflective film includes a plurality of high refractive index layers and a plurality of low refractive index layers that are repeatedly and alternately stacked.
在一實施例中,先形成於該輔助層上為該高折射率層或該低折射率層。In one embodiment, the high refractive index layer or the low refractive index layer is first formed on the auxiliary layer.
本創作全文所述方向性或其近似用語,例如前、後、左、右、上(頂)、下(底)、內、外、側等,主要是參考圖式的方向,各方向性或其近似用語僅用以輔助說明及理解本創作的各實施例,非用以限制本創作。The directions or similar terms described throughout the present invention, such as front, back, left, right, top, bottom, inside, outside, side, etc., are mainly with reference to the directions of the drawings. Each direction or similar terms are only used to assist in explaining and understanding the various embodiments of the present invention, and are not used to limit the present invention.
本創作全文所記載的元件及構件使用之冠詞,如一或該,僅是為了方便使用或簡化描述,應被解讀為包括一個或至少一個,且單一的概念也包括複數的概念,除非明顯有不同意思。The articles used in the elements and components described in the present invention, such as a or the, are only for the convenience of use or simplified description and should be interpreted as including one or at least one, and a single concept also includes a plural concept unless it is obvious that there is a different meaning.
為讓上述及其他目的、功效、特徵更明顯易懂,下文特舉部分較佳實施例,並參照所附圖式,作詳細說明。在不背離創作精神下,本案具有多種實施方式,並不受限於下文實施方式所具體描述的細節,且圖式未必按照實際比例繪製,僅為說明實施例而提供。In order to make the above and other purposes, effects, and features more clearly understood, some preferred embodiments are specifically cited below, and detailed descriptions are made with reference to the attached drawings. Without departing from the creative spirit, this case has a variety of implementation methods, and is not limited to the details specifically described in the implementation methods below, and the drawings may not be drawn according to the actual scale, but are provided only for illustrating the embodiments.
圖2為本創作一實施例之具抗熱彎曲破裂的反射膜結構之基板剖面圖。請參考圖2所示,本實施例之具抗熱彎曲破裂的反射膜結構之基板,包含:一基材(10)、一輔助層(20)及一反射層(30),該基材(10)可提供該輔助層(20)的支撐結構;該輔助層(20)設置於該基材(10)上,且可支撐該反射層(30)之設置;該反射層(30)設置於該輔助層(20)上形成反射膜,該反射膜之外側為一入光面(301),該入光面(301)可供光線(L)進入。藉由反射膜的結構及製程(例如多層反射膜結構及電漿濺鍍製程),可使進入該反射層(30)的光線(L)更容易被反射在具有反射膜結構之基板,具有提高其反射效果。FIG2 is a cross-sectional view of a substrate with a reflective film structure that resists thermal bending and cracking according to an embodiment of the present invention. Referring to FIG2 , the substrate with a reflective film structure that resists thermal bending and cracking according to the present embodiment comprises: a substrate (10), an auxiliary layer (20) and a reflective layer (30), wherein the substrate (10) can provide a supporting structure for the auxiliary layer (20); the auxiliary layer (20) is disposed on the substrate (10) and can support the arrangement of the reflective layer (30); the reflective layer (30) is disposed on the auxiliary layer (20) to form a reflective film, and the outer side of the reflective film is a light incident surface (301), and the light incident surface (301) allows light (L) to enter. By means of the structure and process of the reflective film (such as a multi-layer reflective film structure and a plasma sputtering process), the light (L) entering the reflective layer (30) can be more easily reflected on the substrate having the reflective film structure, thereby improving its reflection effect.
圖3為本創作一實施例之具抗熱彎曲破裂的多層反射膜結構之基板剖面圖。請參考圖3所示,較佳地,該反射層(30)為多層反射膜,且該多層反射膜可為基數層或偶數層。Fig. 3 is a cross-sectional view of a substrate of a multi-layer reflective film structure with heat-resistant bending and cracking according to an embodiment of the present invention. Referring to Fig. 3, preferably, the reflective layer (30) is a multi-layer reflective film, and the multi-layer reflective film can be a base number layer or an even number layer.
圖4為本創作另一實施例之具抗熱彎曲破裂的多層反射膜結構之基板剖面圖。請參考圖3及圖4所示,上述多層反射膜包含重覆交錯堆疊之數個高折射率層(31)及數個低折射率層(32),且可先在該輔助層(20)上形成高折射率層(31)或低折射率層(32)不拘。FIG4 is a cross-sectional view of a substrate of a multi-layer reflective film structure with heat-resistant bending and cracking according to another embodiment of the invention. Referring to FIG3 and FIG4, the multi-layer reflective film comprises a plurality of high refractive index layers (31) and a plurality of low refractive index layers (32) stacked repeatedly and staggered, and the high refractive index layer (31) or the low refractive index layer (32) can be formed on the auxiliary layer (20) first.
圖5為本創作一實施例之具抗熱彎曲破裂的反射膜結構之基板之製造方法流程圖。請參考圖5所示,本實施例之具抗熱彎曲破裂的反射膜結構之基板之製造方法,其步驟包含:提供基材步驟(S10)、成形輔助層步驟(S20)及成形反射層步驟(S30),該提供一基材步驟(S10)係提供一基材,可作為支撐;該成形輔助層步驟(S20)係於該基材上表面形成一輔助層;該成形反射層步驟(S30)係於該輔助層上表面形成一層或多層反射膜。FIG5 is a flow chart of a method for manufacturing a substrate with a reflective film structure that resists thermal bending and cracking according to an embodiment of the present invention. Referring to FIG5, the method for manufacturing a substrate with a reflective film structure that resists thermal bending and cracking according to the present embodiment comprises: providing a substrate step (S10), forming an auxiliary layer step (S20), and forming a reflective layer step (S30), wherein the providing a substrate step (S10) is to provide a substrate that can be used as a support; the forming auxiliary layer step (S20) is to form an auxiliary layer on the upper surface of the substrate; and the forming reflective layer step (S30) is to form one or more layers of reflective film on the upper surface of the auxiliary layer.
藉由上述步驟及形成之結構,可選用具一定可繞特性及附著性之材料(其中有不少材料用於軟性可繞基板)作為該輔助層,利用該輔助層的設計及製造方法,克服多層膜的反射層在彎曲過程中的破裂及應力的抵銷,能提高反射膜抵抗熱彎曲時破裂的性能。Through the above steps and the structure formed, a material with certain flexibility and adhesion properties (many of which are used for soft and flexible substrates) can be selected as the auxiliary layer. By utilizing the design and manufacturing method of the auxiliary layer, the cracking and stress offset of the reflective layer of the multi-layer film during the bending process can be overcome, and the performance of the reflective film in resisting cracking during thermal bending can be improved.
如圖5所示,進一步地,於該成形一反射層步驟(S30)之後,另包含一熱製程步驟(S40),該熱製程步驟(S40)係對該基材、該輔助層及該反射層進行熱製程處理,能增加反射膜結構的反射效果。As shown in FIG. 5 , further, after the step of forming a reflective layer ( S30 ), a thermal process step ( S40 ) is further included. The thermal process step ( S40 ) is to perform a thermal process on the substrate, the auxiliary layer and the reflective layer to increase the reflective effect of the reflective film structure.
圖6為經本創作之熱製程處理後與處理前之反射率比較之折線圖。請參考圖6所示,在進行熱製程處理(即熱處理)前,該具反射膜結構之基板的紅外線波段之波長的平均反射率約為 50 % ,經熱製程步驟(S40)後,該具反射膜結構之基板的紅外線波段之波長的平均反射率約為 58.9 % ,提升達 17 % 。此外,該熱製程步驟(S40)不僅可優化輔助層及反射層介面,亦可使得輔助層及反射層材料再結晶,使得光學反射效果獲得提升。FIG6 is a line graph comparing the reflectivity before and after the thermal process of the invention. Referring to FIG6, before the thermal process (i.e., heat treatment), the average reflectivity of the infrared wavelength band of the substrate with the reflective film structure is about 50%. After the thermal process step (S40), the average reflectivity of the infrared wavelength band of the substrate with the reflective film structure is about 58.9%, an increase of 17%. In addition, the thermal process step (S40) can not only optimize the interface between the auxiliary layer and the reflective layer, but also make the auxiliary layer and the reflective layer materials recrystallize, so that the optical reflection effect is improved.
較佳地,在一實施例中,該輔助層為透明陶瓷材料,可較不影響光線穿透率。Preferably, in one embodiment, the auxiliary layer is made of a transparent ceramic material, which has little effect on light transmittance.
較佳地,該輔助層之材料包括二氧化矽(SiO 2)、氟摻雜氧化(FTO)、共摻雜的氧化錫(LFTO)、鋁摻雜氧化鋅(AZO)、氧化銻錫(ATO)、氧化銦錫(ITO)或氧化銦鎵鋅(IGZO)。 Preferably, the material of the auxiliary layer includes silicon dioxide (SiO 2 ), fluorine doped oxide (FTO), co-doped tin oxide (LFTO), aluminum doped zinc oxide (AZO), antimony tin oxide (ATO), indium tin oxide (ITO) or indium gallium zinc oxide (IGZO).
較佳地,在一實施例中,該輔助層之厚度為150-250nm。Preferably, in one embodiment, the thickness of the auxiliary layer is 150-250 nm.
較佳地,該輔助層成形方式包含物理氣相沈積(PVD)方法及化學氣相沈積(CVD)方法。本創作選用電漿濺鍍方法來進行輔助層之製作。Preferably, the auxiliary layer is formed by physical vapor deposition (PVD) and chemical vapor deposition (CVD). This invention uses plasma sputtering to make the auxiliary layer.
綜上所述,本創作之特點包括:應用在基材與反射層間增鍍一輔助層結構,藉由該輔助層之較佳的可繞特性及附著性的材料特性,加上電漿濺鍍的成形製程,可使該輔助層具備緩衝性,能抵銷多層膜在熱彎曲過程中累積的應力,可克服熱彎曲過程的破裂問題。本創作另設計有高低折射率交錯堆疊之多層反射膜結構,能增強其光線的反射效果。In summary, the features of this invention include: an auxiliary layer structure is applied between the substrate and the reflective layer. Through the auxiliary layer's better flexibility and adhesion material properties, coupled with the plasma sputtering forming process, the auxiliary layer can have a buffering property, which can offset the stress accumulated in the multi-layer film during the thermal bending process and overcome the cracking problem during the thermal bending process. This invention also designs a multi-layer reflective film structure with high and low refractive index staggered stacking, which can enhance its light reflection effect.
本創作已利用上述較佳實施例揭示,惟其並非用以限定本創作。本創作所屬技術領域中具有通常知識者,可清楚了解本創作並不受限於上述說明性實施方式的細節。實施方式僅為說明本創作,而非限制本創作,本創作以申請專利範圍為依據,而非以上述說明為依據。申請專利範圍之文義及其均等範圍均屬本創作之專利權範圍。The present invention has been disclosed by using the above preferred embodiments, but they are not used to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can clearly understand that the present invention is not limited to the details of the above illustrative implementation methods. The implementation methods are only for explaining the present invention, not for limiting the present invention. The present invention is based on the scope of the patent application, not on the above description. The meaning of the scope of the patent application and its equivalent scope are all within the scope of the patent right of the present invention.
[本創作] (10):基材 (20):輔助層 (30):反射層 (301):入光面 (31):高折射率層 (32):低折射率層 (L):光線 (S10):提供基材步驟 (S20):成形輔助層步驟 (S30):成形反射層步驟 (S40):熱製程步驟 [習用] (91):基材 (92):反射膜 [Original work] (10): substrate (20): auxiliary layer (30): reflective layer (301): light incident surface (31): high refractive index layer (32): low refractive index layer (L): light (S10): substrate providing step (S20): auxiliary layer forming step (S30): reflective layer forming step (S40): thermal process step [Application] (91): substrate (92): reflective film
圖1為習用技術之具有反射膜及基材的基板之剖面圖。 圖2為本創作一實施例之具抗熱彎曲破裂的反射膜結構之基板剖面圖。 圖3為本創作一實施例之具抗熱彎曲破裂的多層反射膜結構之基板剖面圖。 圖4為本創作另一實施例之具抗熱彎曲破裂的多層反射膜結構之基板剖面圖。 圖5為本創作一實施例之具抗熱彎曲破裂的反射膜結構之基板之製造方法流程圖。 圖6為經本創作之熱製程處理後與處理前之反射率比較之折線圖。 FIG1 is a cross-sectional view of a substrate with a reflective film and a substrate of a conventional technology. FIG2 is a cross-sectional view of a substrate with a reflective film structure resistant to thermal bending and cracking in an embodiment of the present invention. FIG3 is a cross-sectional view of a substrate with a multi-layer reflective film structure resistant to thermal bending and cracking in an embodiment of the present invention. FIG4 is a cross-sectional view of a substrate with a multi-layer reflective film structure resistant to thermal bending and cracking in another embodiment of the present invention. FIG5 is a flow chart of a manufacturing method of a substrate with a reflective film structure resistant to thermal bending and cracking in an embodiment of the present invention. FIG6 is a line graph comparing the reflectivity after and before the thermal process of the present invention.
(10):基材 (10): Base material
(20):輔助層 (20): Auxiliary layer
(30):反射層 (30):Reflection layer
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113208725U TWM665748U (en) | 2024-08-13 | 2024-08-13 | Substrate for a reflective film structure with heat-resistant bending crack resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113208725U TWM665748U (en) | 2024-08-13 | 2024-08-13 | Substrate for a reflective film structure with heat-resistant bending crack resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM665748U true TWM665748U (en) | 2025-01-21 |
Family
ID=95124410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113208725U TWM665748U (en) | 2024-08-13 | 2024-08-13 | Substrate for a reflective film structure with heat-resistant bending crack resistance |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM665748U (en) |
-
2024
- 2024-08-13 TW TW113208725U patent/TWM665748U/en unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6043287B2 (en) | Quenchable three-layer antireflective coating, coated article comprising a quenchable three-layer antireflective coating and / or a method for producing the same | |
| JP5229075B2 (en) | Broadband reflector | |
| CN101866956B (en) | Anti-reflective film and preparation method thereof | |
| JP3247876B2 (en) | Glass substrate with transparent conductive film | |
| TWI695462B (en) | Thin film packaging structure and display device having the same | |
| JP2012518205A (en) | Method for manufacturing an omnidirectional multilayer photonic structure | |
| US20140147582A1 (en) | Heat treatable four layer anti-reflection coating | |
| KR101194257B1 (en) | Transparent substrate for solar cell having a broadband anti-reflective multilayered coating thereon and method for preparing the same | |
| CN110274326A (en) | A kind of radiation refrigerator and preparation method thereof in the daytime | |
| US11555953B2 (en) | Optical device with wires and organic moieties | |
| CN103579405A (en) | High-speed SNSPD with high-absorption structure and preparation method of high-speed SNSPD | |
| CN113151783A (en) | Combined reflective film and preparation method thereof | |
| JP2001085722A (en) | Method for manufacturing transparent electrode film and solar battery | |
| RU2008111986A (en) | GLASS COMPONENT OF A SUNNY ELEMENT, HAVING AN OPTIMIZING LIGHT-TRANSMISSION COATING, AND METHOD FOR ITS MANUFACTURE | |
| KR101688408B1 (en) | Multilayer coated substrate with high reflectance and high durability, useful for rear surface reflection of photovoltaic module and method for manufacturing the same | |
| TWM665748U (en) | Substrate for a reflective film structure with heat-resistant bending crack resistance | |
| TWM662990U (en) | Photovoltaic module structure | |
| TWI902396B (en) | Substrate for a reflective film structure with heat-resistant bending crack resistance and manufacturing method thereof | |
| TWI900196B (en) | Photovoltaic module structure and manufacturing method thereof | |
| CN115425149B (en) | A thermally stable perovskite solar cell structure and preparation method thereof | |
| CN206259358U (en) | A kind of crystal silicon solar energy battery double-layer reflection reducing coating for reducing power attenuation | |
| CN117631101A (en) | Low reflection film system structure and method for manufacturing same | |
| JP2011096730A (en) | Thin-film solar cell and method of manufacturing the same | |
| TWI867490B (en) | Infrared heat radiation reflector plate | |
| CN219842572U (en) | High-temperature-resistant resin lens |