TWM655959U - Batch substrate atomic layer deposition apparatus - Google Patents

Abstract

A batch substrate atomic layer deposition device includes a vacuum chamber, a shaft sealing device and a rotary drive assembly. The vacuum chamber includes a front side wall, a rear side wall and a peripheral surface; the front side wall and the rear side wall are arranged parallel to each other, and the peripheral surface connects the edges of the front side wall and the rear side wall to form a reaction space. The inner side of the peripheral surface is provided with a plurality of staggered recesses and a plurality of protrusions, and the plurality of recesses and the plurality of protrusions are arranged radially around a rotation axis, and the bottom of each recess is a plane, and the rotation axis passes through the front side wall and the rear side wall. One end of the shaft sealing device is connected to the rear side wall along the rotation axis. The rotary drive assembly is connected to the other end of the shaft seal device to connect to the vacuum chamber through the shaft seal device and drive the vacuum chamber to rotate along the rotary axis.

Description

Batch substrate atomic layer deposition equipment

The new device is related to a batch substrate atomic layer deposition device, which is used to accommodate multiple substrates to be processed and perform atomic layer deposition operations on the surfaces of multiple substrates to be processed in batches.

Nanoparticles are generally defined as particles smaller than 100 nanometers in at least one dimension. Nanoparticles have completely different physical and chemical properties from macroscopic matter. Generally speaking, the physical properties of macroscopic matter are unrelated to their size, but this is not the case for nanoparticles. Nanoparticles have potential applications in biomedicine, optics, and electronics.

Quantum dots are semiconductor nanoparticles. The semiconductor materials currently being studied are II-VI materials, such as ZnS, CdS, CdSe, etc., among which CdSe is the most popular. The size of quantum dots is usually between 2 and 50 nanometers. When quantum dots are irradiated with ultraviolet light, the electrons in the quantum dots absorb energy and jump from the valence band to the conduction band. When the excited electrons return from the conduction band to the valence band, they release energy through luminescence.

The energy gap of quantum dots is related to their size. The larger the size of the quantum dots, the smaller the energy gap. After irradiation, they will emit light with a longer wavelength. The smaller the size of the quantum dots, the larger the energy gap. After irradiation, they will emit light with a shorter wavelength. For example, quantum dots of 5 to 6 nanometers will emit orange or red light, while quantum dots of 2 to 3 nanometers will emit blue or green light. Of course, the color of the light depends on the material composition of the quantum dots.

The light generated by light-emitting diodes (LEDs) using quantum dots can approach a continuous spectrum, have high color rendering, and help improve the light-emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, making quantum dots the focus of the development of a new generation of light-emitting devices and displays.

Although quantum dots have the above advantages and characteristics, they are prone to agglomeration during the manufacturing process. In addition, quantum dots have high surface activity and are prone to react with air and water vapor, thereby shortening the life of quantum dots.

Specifically, during the process of making quantum dots into the sealant of LEDs, agglomeration may occur, which reduces the optical performance of quantum dots. In addition, after the quantum dots are made into the sealant of LEDs, external oxygen or water vapor may still pass through the sealant and contact the surface of the quantum dots, causing the quantum dots to oxidize and shorten the performance or service life of the quantum dots and LEDs. In addition, surface defects and dangling bonds of quantum dots may also cause nonradiative recombination.

Currently, the industry uses atomic layer deposition (ALD) to form a nanometer-thick film on the surface of quantum dots, or to form multiple layers of films on the surface of quantum dots to form a quantum well structure.

Atomic layer deposition can form a film of uniform thickness on a substrate and can effectively control the thickness of the film. In theory, it is also applicable to three-dimensional quantum dots. When quantum dots are placed on a carrier plate, there will be contact points between adjacent quantum dots, making it impossible for the precursor gas of atomic layer deposition to contact these contact points, and resulting in the inability to form a film of uniform thickness on the surface of all nanoparticles.

In view of the above technical problems, this novel invention proposes a batch substrate atomic layer deposition device to form a thin film with uniform thickness on the surface of nanoparticles.

The present invention proposes a batch substrate atomic layer deposition device, which includes a vacuum chamber, a shaft sealing device and a rotary drive assembly. The vacuum chamber includes a front side wall, a rear side wall and a peripheral surface; the front side wall and the rear side wall are arranged parallel to each other, and the peripheral surface connects the edges of the front side wall and the rear side wall to form a reaction space. The inner side of the peripheral surface is provided with a plurality of recesses and a plurality of protrusions arranged in a staggered manner, and the plurality of recesses and the plurality of protrusions are arranged radially around a rotation axis, and the bottom of each recess is a plane, and the rotation axis passes through the front side wall and the rear side wall. One end of the shaft sealing device is connected to the rear side wall along the rotation axis. The rotary drive assembly is connected to the other end of the shaft seal device to connect to the vacuum chamber through the shaft seal device and drive the vacuum chamber to rotate along the rotary axis.

In at least one embodiment, the batch substrate atomic layer deposition device further includes a base having a setting surface, and the rotary drive assembly is disposed on the setting surface.

In at least one embodiment, the batch substrate atomic layer deposition device further includes a plurality of gas pipelines extending in the shaft sealing device, and the fluid is connected to the vacuum chamber, and the plurality of gas pipelines are fixed and do not rotate with the vacuum chamber.

In at least one embodiment, the shaft sealing device includes an outer sleeve and a center shaft. The outer sleeve is rotatably mounted on a mounting surface through a bearing frame, and the outer sleeve has a first end, a second end, and a receiving space; the rotary drive assembly is connected to the first end of the outer sleeve, and the second end of the outer sleeve is connected to the rear wall of the vacuum chamber, so that the rotary drive assembly drives the outer sleeve to rotate and drives the vacuum chamber to rotate. The center shaft has a tubular space, and a plurality of gas pipelines extend in the tubular space. The center shaft is inserted into the receiving space, and the outer sleeve and the center shaft are coaxially arranged in the direction of the rotation axis; the center shaft is fixedly arranged, and the center shaft does not rotate with the outer sleeve.

In at least one embodiment, a through hole is provided on the rear side wall, the central shaft protrudes from the second end of the outer sleeve, is inserted into the through hole and forms a rotary seal with the vacuum chamber, and one or more shaft seals are provided between the central shaft and the outer sleeve.

In at least one embodiment, the plurality of gas pipelines include an exhaust pipeline, a reaction gas pipeline, and a blowing pipeline. The exhaust pipeline fluid is connected to the reaction space and is used to extract the gas in the reaction space. The reaction gas pipeline fluid is connected to the reaction space and is used to transport the reaction gas containing the reactants to the reaction space. The blowing pipeline fluid is connected to the reaction space and is used to transport the inert gas that does not participate in the reaction as a purge gas to the reaction space.

In at least one embodiment, a filter unit is disposed at one end of the central axis connected to the reaction space; the exhaust pipeline is connected to the reaction space through the filter unit fluid, and the gas in the reaction space is extracted through the filter unit.

In at least one embodiment, the vacuum chamber further includes a surrounding wall, which is disposed on the rear wall at one side of the reaction space and surrounds the through hole.

In at least one embodiment, the batch substrate atomic layer deposition device further includes a heater and a temperature sensing unit. The heater is disposed in the tubular space for heating the tubular space. The temperature sensing unit is disposed in the tubular space of the central axis for measuring the temperature of the heater or the tubular space to adjust the power of the heater.

In at least one embodiment, the batch substrate atomic layer deposition device further includes a heating device, which is arranged around the outer side of the periphery to heat the vacuum chamber and the reaction space.

Through the new batch substrate atomic layer deposition device, batch atomic layer film deposition can be performed on multiple substrates to be processed at the same time. The powder used to form a part of the film can be effectively stirred and spread in the reaction space to form a film of uniform thickness on the surface of the substrate to be processed.

100: Batch substrate atomic layer deposition equipment

110: Base

112: Setting surface

114: Bearing frame

120: Rotary drive assembly

122: Motor

124: Transmission components

130: Shaft sealing device

132: Outer sleeve tube

132a: First end

132b: Second end

132c: Storage space

134:Center axis

134a: Tubular space

134b: Filter unit

140: Vacuum chamber

140a: Reaction space

140b: Cavity body

140c: Cover plate

142: Anterior wall

144: posterior wall

144a: Perforation

146: Peripheral

147: Concave part

148: convex part

149:Surrounding wall

150: Gas pipeline

152: Exhaust pipeline

154: Reaction gas pipeline

156: Air blowing pipeline

158: Temperature sensing unit

159: Heater

160: Shaft seal

180: Heating device

182:Connection frame

P: Powder

C: Substrate to be processed

Figure 1 is a three-dimensional diagram of a batch substrate atomic layer deposition device of the present novel embodiment.

Figure 2 is a schematic cross-sectional view of a batch substrate atomic layer deposition device of the present novel embodiment.

Figure 3 is a cross-sectional schematic diagram of the shaft seal device in this novel embodiment.

Figure 4 is a three-dimensional diagram of the vacuum chamber in this novel embodiment.

Figure 5 is a schematic cross-sectional view of the vacuum chamber in this novel embodiment.

Figure 6 is another cross-sectional schematic diagram of the vacuum chamber in this novel embodiment.

Figure 7 is a three-dimensional diagram of a batch substrate atomic layer deposition device of another embodiment of the present invention.

Figure 8 is a cross-sectional schematic diagram of a batch substrate atomic layer deposition device of another embodiment of the present invention.

Please refer to FIG. 1, FIG. 2, FIG. 3 and FIG. 4, which are a batch substrate atomic layer deposition device 100 proposed in the present novel embodiment. As shown in FIG. 1 and FIG. 2, the batch substrate atomic layer deposition device 100 includes a base 110, a rotary drive assembly 120, a shaft seal device 130, a vacuum chamber 140 and a plurality of gas pipelines 150. The rotary drive assembly 120 is connected to the vacuum chamber 140 through the shaft seal device 130, and drives the vacuum chamber 140 to rotate along a rotation axis. The plurality of gas pipelines 150 extend in the shaft seal device 130, and are fluidly connected to the inside of the vacuum chamber 140, and the plurality of gas pipelines 150 are fixed and do not rotate with the vacuum chamber 140.

As shown in Figures 1, 2 and 4, the vacuum chamber 140 includes a front sidewall 142, a rear sidewall 144 and a peripheral surface 146. The front sidewall 142 and the rear sidewall 144 are arranged parallel to each other. The peripheral surface 146 connects the edges of the front sidewall 142 and the rear sidewall 144 to form a reaction space 140a for accommodating powder P. The shaft sealing device 130 is connected to the rear sidewall 144, a rotation axis passes through the front sidewall 142 and the rear sidewall 144, and the peripheral surface 146 surrounds the rotation axis.

As shown in FIG. 5 and FIG. 6 , a plurality of recesses 147 and a plurality of protrusions 148 are arranged in a staggered manner on the inner side of the peripheral surface 146, and the bottom of each recess 147 is a plane. The plurality of recesses 147 and the plurality of protrusions 148 are arranged radially around the rotation axis. The plurality of recesses 147 are respectively used for placing a substrate C to be processed thereon, so as to perform atomic layer deposition on a plurality of substrates C to be processed in batches at the same time.

As shown in FIG. 1 and FIG. 2 , the base 110 has a mounting surface 112 for mounting various components thereon. The base 110 may be an independent plate that can be detachably mounted on a work platform. The base 110 may also be a part of the work platform.

As shown in FIG. 2 and FIG. 3 , one end of the shaft seal device 130 is connected to the rear side wall 144 of the vacuum chamber 140 along the rotation axis, and the rotary drive assembly 120 is connected to the other end of the shaft seal device 130. Specifically, the shaft seal device 130 includes an outer sleeve 132 and a center shaft 134. The outer sleeve 132 is rotatably mounted on the mounting surface 112 of the base 110 through a bearing frame 114, and the rotary drive assembly 120 is disposed on the mounting surface 112. The outer sleeve 132 has a first end 132a, a second end 132b, and a receiving space 132c. Specifically, the outer sleeve 132 is a hollow cylinder, the rotary drive assembly 120 is directly or indirectly connected to the first end 132a of the outer sleeve 132, and the second end 132b of the outer sleeve 132 is connected to the rear side wall 144 of the vacuum chamber 140, so that the rotary drive assembly 120 is connected to the vacuum chamber 140 through the shaft seal device 130. The rotary drive assembly 120 is used to drive the outer sleeve 132 to rotate and drive the vacuum chamber 140 to rotate along the rotation axis.

In terms of specific composition, the vacuum chamber 140 includes a chamber body 140b and a cover plate 140c. The chamber body 140b has a rear side wall 144 and a peripheral surface 146. The peripheral surface 146 extends from the edge of the rear side wall 144 to form an opening. The cover plate 140c is used to be combined with the opening to serve as the front side wall 142, and a reaction space 140a is formed between the chamber body 140b and the cover plate 140c.

The aforementioned powder P can be a quantum dot, such as II-VI semiconductor materials such as ZnS, CdS, and CdSe, and the thin film formed on the quantum dot can be aluminum oxide (Al2O3). The above materials are only examples of the present invention.

As shown in FIG. 2 and FIG. 3 , the central shaft 134 has a tubular space 134a, and a plurality of gas pipelines 150 extend in the tubular space 134a. The central shaft 134 is inserted into the accommodating space 132c of the outer sleeve 132, and the outer sleeve 132 and the central shaft 134 are coaxially arranged in the rotation axis direction. The central shaft 134 is fixedly arranged, the rotary drive assembly 120 is not connected to the central shaft 134, and there is no fixed connection between the outer sleeve 132 and the central shaft 134, so the central shaft 134 does not rotate with the outer sleeve 132, for example, the central shaft 134 is directly or indirectly fixed to the base 110, and the outer sleeve 132 is rotatably sleeved on the central shaft 134. The non-rotating center shaft 134 helps maintain the stability of multiple gas pipelines 150.

As shown in FIG. 1 and FIG. 2 , the second end 132b of the outer sleeve 132 is vertically connected to the rear side wall 144, so that the rotary drive assembly 120 drives the vacuum chamber 140 to rotate along the rotation axis through the outer sleeve 132.

As shown in FIG. 2 , a through hole 144a is provided on the rear wall 144. The central shaft 134 protrudes from the second end 132b of the outer sleeve 132 and is inserted into the through hole 144a to form a rotary seal with the vacuum chamber 140. Specifically, one or more shaft seals 160 are provided between the central shaft 134 and the outer sleeve 132. The shaft seals 160 may be mechanical shaft seals or magnetic fluid shaft seals to enhance the airtightness of the reaction space 140a and prevent the gap between the central shaft 134 and the through hole 144a from affecting the airtightness of the reaction space 140a.

As shown in FIG. 1 and FIG. 2 , specifically, the rotary drive assembly 120 has a motor 122 and a transmission element 124. The motor 122 is fixed on the mounting surface 112 of the base 110 and is connected to the outer sleeve 132 of the shaft seal device 130 through the transmission element 124. In one embodiment, the transmission element 124 includes a driving gear connected to the motor 122 and a driven gear disposed on the outer sleeve 132. The driving gear engages with the driven gear, so that the motor 122 drives the outer sleeve 132 through the transmission element 124, thereby driving the vacuum chamber 140 to rotate. The transmission element 124 does not exclude other components, such as a combination of a belt and a pulley coupled to the motor 122/the outer sleeve 132. It is possible to omit the transmission element 124 and directly connect the outer sleeve 132 with the motor 122. The rotary drive assembly 120 drives the outer sleeve 132 to rotate, so that the vacuum chamber 140 rotates continuously in the same direction, such as continuously rotating clockwise or counterclockwise.

As shown in FIG. 2 and FIG. 3 , a plurality of gas pipelines 150 are placed in the tubular space 134a of the central axis 134 and connected to the reaction space 140a. The plurality of gas pipelines 150 include a vacuum pipeline 152, a reaction gas pipeline 154, and a blowing pipeline 156, and the fluid is connected to the reaction space 140a of the vacuum chamber 140.

As shown in FIG. 2 and FIG. 3 , the exhaust line 152 is used to connect to an external exhaust pump, and the fluid is connected to the reaction space 140a of the vacuum chamber 140, so that the exhaust pump is used to exhaust the reaction space 140a, and the gas in the reaction space 140a is extracted to perform the subsequent atomic layer deposition process.

As shown in FIG. 2 and FIG. 3 , the reaction gas pipeline 154 is fluidly connected to the reaction space 140a of the vacuum chamber 140, and is used to transport the reaction gas containing the reactant (initiator/precursor) to the reaction space 140a, so that the reactant (initiator/precursor) is adsorbed on the surface of the powder P. The reaction gas may include an inert gas (such as nitrogen) as a carrier and the initiator/precursor blown by the inert gas; or, the main component of the reaction gas itself is the reactant (initiator/precursor). In actual application, the reaction gas pipeline 154 will continue to transport the reaction gas into the reaction space 140a, and the vacuum pump will continue to pump air through the vacuum pipeline 152 to remove the unreacted precursor gas in the reaction space 140a. There can be multiple reaction gas pipelines 154, each of which transports reaction gas containing different reactants.

As shown in FIG. 2 and FIG. 3 , the blowing pipeline 156 is fluidly connected to the reaction space 140a of the vacuum chamber 140 and is used to transport an inert gas that does not participate in the reaction as a purge gas, such as nitrogen, into the reaction space 140a. The purge gas creates a flow field of the powder P in the reaction space 140a, blows the powder P in the reaction space 140a, and cooperates with the rotary drive assembly 120 to drive the vacuum chamber 140 to rotate, which can effectively and evenly stir the powder P in the reaction space 140a, so as to deposit a thin film of uniform thickness on the surface of each powder P. In addition, the flow rate of the gas delivered to the reaction space 140a by the reaction gas pipeline 154 can be increased, and the powder P in the reaction space 140a can be blown by the gas, so that the powder P is driven by the gas and diffused to various areas of the reaction space 140a. In addition, the blowing pipeline 156 can also be omitted, and the flow rate of the reaction gas delivered by the reaction gas pipeline 154 can be directly increased to create a flow field of the powder P with the reaction gas.

In addition, the batch substrate atomic layer deposition device 100 further includes a temperature sensing unit 158 and a heater 159. The temperature sensing unit 158 can be a thermocouple, which is disposed in the tubular space 134a of the central axis 134. The heater 159 is also disposed in the tubular space 134a, and is used to heat the tubular space 134a to adjust the gas temperature in the multiple gas pipelines 150. The temperature sensing unit 158 is used to measure the temperature of the heater 159 or the tubular space 134a to know the working state of the heater 159, thereby adjusting the power of the heater 159.

As shown in FIG. 5 , the substrate C to be processed can be an LED substrate or a wafer, and the substrate C to be processed can be placed on the plane of the recess 147. The vacuum chamber 140 is driven to rotate by the driving device and the shaft sealing device 130, and the reactant (precursor/starting material) can be deposited and attached to the surface of the substrate C to be processed to form a thin film. At the same time, the powder P continues to fall under the influence of gravity and falls on the substrate C to be processed that is moved to the bottom. The reactant can effectively adsorb the powder P to form a thin film with powder P particles.

In addition, during the rotation of the vacuum chamber 140, the convex portion 148 that continuously moves in the circumferential direction can also stir the powder P and lift up the powder P in the reaction space 140a, so that the powder P can be more fully dispersed without being accumulated at a specific position on the peripheral surface 146.

As shown in FIG. 2 , in an embodiment of the present invention, a filter unit 134b may be provided at one end of the central axis 134 connected to the reaction space 140a, wherein the exhaust pipe 152 is connected to the reaction space 140a through the fluid of the filter unit 134b, and the gas in the reaction space 140a is extracted through the filter unit 134b. The filter unit 134b is mainly used to filter the powder P in the reaction space 140a to prevent the powder P from entering the exhaust pipe 152 during the exhaust process, thereby causing the loss of the powder P.

In order to prevent the powder P stirred by the protrusion 148 from accumulating in large quantities in the filter unit 134b and clogging the filter unit 134b, the vacuum chamber 140 further includes a surrounding wall 149, which is arranged on the rear wall 144 at one side of the reaction space 140a and surrounds the through hole 144a. The surrounding wall 149 blocks the through hole 144a from the radial direction of the through hole 144a, thereby preventing the stirred powder P from falling directly into the through hole 144a area and clogging the filter unit 134b.

Referring to FIG. 7 and FIG. 8 , in order to maintain the temperature in the reaction space 140a, the batch substrate atomic layer deposition device 100 further includes a heating device 180, which is disposed on the outer side of the peripheral surface 146 of the vacuum chamber 140. Specifically, the heating device 180 is annular and is disposed around the outer side of the peripheral surface 146. The heating device 180 body can be metal, and a heating coil or a heating rod is buried inside. The heating device 180 is used to heat the vacuum chamber 140 and the reaction space 140a. In an embodiment of the present invention, the heating device 180 can be connected to the base 110 via the connecting frame 182, and the rotary drive assembly 120 drives the vacuum chamber 140 to rotate relative to the heating device 180 via the shaft sealing device 130.

Through the new batch substrate atomic layer deposition device 100, batch atomic layer thin film deposition can be performed on multiple substrates C to be processed at the same time. The powder P used to form a part of the thin film can be effectively stirred and spread in the reaction space 140a to form a thin film with uniform thickness on the surface of the substrate C to be processed.

140: Vacuum chamber

140b: Cavity body

140c: Cover plate

142: Anterior wall

144: posterior wall

146: Peripheral

147: Concave part

148: convex part

Claims (10)

A batch substrate atomic layer deposition device comprises: a vacuum chamber, comprising a front side wall, a rear side wall and a peripheral surface; the front side wall and the rear side wall are arranged parallel to each other, and the peripheral surface connects the edges of the front side wall and the rear side wall to form a reaction space; wherein the inner side of the peripheral surface is provided with a plurality of concave portions and a plurality of convex portions arranged in a staggered manner, and the plurality of concave portions and the plurality of convex portions surround the The vacuum chamber is radially arranged along a rotation axis, the bottom of each concave portion is a plane, and the rotation axis passes through the front side wall and the rear side wall; an axis sealing device, one end of which is connected to the rear side wall along the rotation axis; and a rotation drive assembly connected to the other end of the axis sealing device to connect to the vacuum chamber through the axis sealing device and drive the vacuum chamber to rotate along the rotation axis. The batch substrate atomic layer deposition device as described in claim 1 further includes a base having a setting surface, and the rotary drive assembly is set on the setting surface. The batch substrate atomic layer deposition device as described in claim 1 further includes a plurality of gas pipelines extending in the shaft sealing device, and the fluid is connected to the vacuum chamber, and the plurality of gas pipelines are fixed and do not rotate with the vacuum chamber. The batch substrate atomic layer deposition device as described in claim 3, wherein the shaft sealing device comprises: an outer sleeve, which is rotatably mounted on the mounting surface through a bearing frame, and the outer sleeve has a first end, a second end and a containing space; the rotary drive assembly is connected to the first end of the outer sleeve, and the second end of the outer sleeve is connected to the rear wall of the vacuum chamber, so that the rotary drive assembly The drive assembly is connected to the rear wall of the vacuum chamber through the outer sleeve tube to drive the vacuum chamber to rotate; and a central shaft having a tubular space, the plurality of gas pipelines extending in the tubular space; wherein the central shaft is inserted into the accommodating space, and the outer sleeve tube and the central shaft are coaxially arranged in the direction of the rotation axis; the central shaft is fixedly arranged, and the central shaft does not rotate with the outer sleeve tube. The batch substrate atomic layer deposition device as described in claim 4, wherein the rear side wall is provided with a through hole, the central shaft protrudes from the second end of the outer sleeve tube, is inserted into the through hole and forms a rotation seal with the vacuum chamber, and one or more shaft seals are provided between the central shaft and the outer sleeve tube. The batch substrate atomic layer deposition apparatus as described in claim 5, wherein the plurality of gas pipelines include: an exhaust pipeline, the fluid of which is connected to the reaction space, and is used to exhaust the gas in the reaction space; a reaction gas pipeline, the fluid of which is connected to the reaction space, and is used to transport the reaction gas containing the reactant to the reaction space; and a blowing pipeline, the fluid of which is connected to the reaction space, and is used to transport the inert gas that does not participate in the reaction as the blowing gas to the reaction space. As described in claim 6, a batch substrate atomic layer deposition device, wherein a filter unit is provided at one end of the central axis connected to the reaction space; the exhaust pipeline is connected to the reaction space through the fluid of the filter unit, and the gas in the reaction space is extracted through the filter unit. As described in claim 7, the batch substrate atomic layer deposition device, wherein the vacuum chamber further includes a surrounding wall, which is arranged on one side of the rear wall located in the reaction space and surrounds the through hole. The batch substrate atomic layer deposition device as described in claim 8 further comprises: a heater, disposed in the tubular space, for heating the tubular space; and a temperature sensing unit, disposed in the tubular space of the central axis, for measuring the temperature of the heater or the tubular space to adjust the power of the heater. The batch substrate atomic layer deposition device as described in claim 1 further includes a heating device, which is arranged around the outer side of the periphery to heat the vacuum chamber and the reaction space.

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