TWM645270U - Semiconductor structure - Google Patents

Abstract

The present utility model provides a semiconductor structure including: a substrate having a mounting surface; a light-emitting chip and a circuit board disposed on the mounting surface; a first transmissive layer enclosing the circuit board; a second transmissive layer enclosing the light-emitting chip; and an optical blocking layer disposed on the substrate and located between the light-emitting chip and the circuit board. The optical blocking layer includes at least one wall inserted into the substrate; and a cover connected with the at least one wall and covering a portion of the first transmissive layer to form a light-receiving hole through the first transmissive layer.

Description

semiconductor structure

The present invention relates to a semiconductor structure, particularly a sensor device for sensing ambient light or distance of a device.

In the technical field of sensor devices for sensing ambient light or distance of a device, when an infrared chip emits light or when the light passes through a light-transmissive transparent glue, the light will be interfered and scattered. Therefore, the light leaving the device is not necessarily straight. There may still be light refracted at other angles and enter the light receiving area (or optical receiving area) of the sensor device, thereby affecting the measurement accuracy of the sensor device.

In the conventional technology, manufacturing the sensor device through a "double mold" or "one mold one cap" process can effectively reduce the number of optical receiving zone (Photic Detecting Zone) strings. The problem of sound interference. As shown in Figure 1, a semiconductor structure manufactured by a conventional process has a substrate S. The light-emitting chip and the circuit board provided on the substrate S are separated by an optical blocking layer B, so that the light emitted by the light-emitting chip irradiates the object along the incident light path I. O. The light is then reflected and directed toward the circuit board along the reflected light path R. However, the configuration of this process will limit the semiconductor structure of the sensor device to the specifications of the die mold flow and the upper cover. As a result, the size of the semiconductor structure will inevitably increase, which is not conducive to application in parts such as smartphones. In addition, the upper cover part of the optical blocking layer in the conventional technology does not block excess light, so that when the circuit board receives the incident light, it is interfered by the light-transmissive transparent glue, which in turn causes the signal generated after receiving the light to be inaccurate, and the measurement is not accurate. Sexuality is thus reduced.

Therefore, there is an urgent need in this field for an improved semiconductor structure for a sensor device to overcome the above-mentioned shortcomings.

In order to solve the above technical problems, the present invention provides a semiconductor structure, which includes: a substrate with a mounting surface; a light-emitting chip and a circuit board, the light-emitting chip and the circuit board are disposed on the mounting surface; a first A light-transmissive layer that encloses the circuit board; a second light-transmissible layer that encloses the light-emitting chip; and an optical blocking layer that is disposed on the substrate and between the light-emitting chip and the circuit board , wherein the optical blocking layer includes: at least one wall inserted into the substrate; and an upper cover connected to the at least one wall and covering a portion of the first light-transmissive layer to form a Light hole.

In the semiconductor structure provided by this invention, the circuit board is a light picker.

In the semiconductor structure provided by this invention, the position of the light-collecting hole corresponds to a light-collecting area of the light picker.

In the semiconductor structure provided by this invention, the optical blocking layer is formed by dispensing glue and the glue is black glue.

In the semiconductor structure provided by this invention, the optical blocking layer is formed by stamping.

In the semiconductor structure provided by this invention, the position of the light-collecting hole does not correspond to the connection line connecting the circuit board to the substrate.

In the semiconductor structure provided by this invention, the upper cover is formed by dispensing glue.

In the semiconductor structure provided by this invention, the upper cover covers a part of the second light-transmissive layer to form a light-emitting hole through the second light-transmissive layer.

In the semiconductor structure provided by this invention, the position of the light-emitting hole corresponds to the light-emitting chip.

In the semiconductor structure provided by this invention, the width of the at least one wall is greater than the width of the circuit board and the light-emitting chip.

This invention at least uses "an optical blocking layer, which is disposed on the substrate and between the light-emitting chip and the circuit board", and "a top cover, which is connected to the at least one wall and covers the first light-transmissive layer. Part of the technical feature is to form a light-collecting hole through the first light-transmissive layer, so that the optical blocking layer can block crosstalk interference between the light-emitting chip and the circuit board used to receive light, and can significantly reduce the component size. While still retaining the beneficial effect of performance improvement, it can be widely used in ambient light and distance sensors for portable 3C products such as mobile phones.

FIG. 2A shows a side cross-sectional end view of a semiconductor structure according to a first embodiment of the present invention. FIG. 2B shows a top view of a semiconductor structure according to the first embodiment of the present invention. FIG. 3 shows a side cross-sectional end view and a schematic light path diagram of the semiconductor structure according to the first embodiment of the present invention.

As shown in FIGS. 2A and 2B , the semiconductor structure 100 according to the first embodiment of the present invention includes a substrate 110 , a light-emitting chip 120 , a circuit board 130 , a first light-transmissive layer 140 , a second light-transmissible layer 150 and an optical barrier. Layer 160. The light-emitting chip 120 is bonded to the mounting surface 112 of the substrate 110 through the adhesive 122, and is connected to the circuit contact points (such as electrodes 114) on the substrate 110 through the first connection wire 121 to supply power to the light-emitting chip 120 and transmit electronic signals. to drive the light emitting chip 120. The second light-transmissive layer 150 encloses and completely covers the light-emitting chip 120 so that the light-emitting chip 120 is covered on the substrate 110 .

The circuit board 130 is adhered to the mounting surface 112 of the substrate 110 through adhesive 131, and is connected to circuit contact points (such as electrodes 113) on the substrate 110 through at least one second connection line 132 to supply power to the circuit board 130 and transmit power. Electronic signals drive the circuit board 130. The first light-transmissive layer 140 encloses and completely covers the circuit board 130 so that the circuit board 130 is covered on the substrate 110 .

The first light-transmitting layer 140 and the second light-transmitting layer 150 may be made of, for example, optical grade epoxy resin or the like. The adhesives 122 and 131 can be made of materials such as Die Attach Film (DAF) that are commonly known in the technical field of this invention. The first connection line 120 and the second connection line 132 may be made of, for example, gold bonding wires of conductive metal material.

As shown in FIG. 2A , the optical blocking layer 160 is disposed on the substrate 110 and is located between the light-emitting chip 120 and the circuit board 130 to block the light emitted by the light-emitting chip 120 from directly entering the circuit board 130 that may include the light picker 135. The light received by the light collecting area of the light picker 135 comes from the light directly reflected from the object.

The optical blocking layer 160 may include an upper cover 162 and a wall 161. The wall 161 is inserted into the substrate 110 and fixedly connected to the substrate 110 to block the light emitted by the light-emitting chip 120 from being directly received laterally by the light picker 135 on the circuit board 130. The upper cover 162 is connected to the wall 161 and extends to both sides in a direction perpendicular to the upright direction of the wall 161 and covers the upper surfaces of the first light-transmissive layer 140 and the second light-transmissible layer 150 . The upper cover 162 is provided with a light emitting hole 180 and a light receiving hole 170 . As shown in FIG. 2B , the position of the light-emitting hole 180 may correspond to the position of the light-emitting chip 120 on the substrate 110 , and the position of the light-receiving hole 170 may correspond to the position of the light-collecting area of the light picker 135 on the circuit board 130 . In other words, the position of the light-receiving hole 170 does not correspond to the connection line (for example, the second connection line 132 ) connecting the circuit board 130 to the substrate 110 . In addition, the width D1 of the optical blocking layer 160 or the wall 161 is larger than the width D2 of the circuit board 130 and the width D3 of the light-emitting chip 120 , and thus is also larger than the widths of the light inlet hole 170 and the light emitting hole 180 .

As shown in FIG. 3 , this enables the upper cover 162 of the optical blocking layer 160 to ensure that the light emitted by the light-emitting chip 120 passes through the light-emitting hole 180 along the incident light path I and irradiates the object O within the incident light area Z0, and further ensures that The light reflected from the object O in the first reflected light area Z1 can be illuminated roughly in the area of the light picker 135 on the circuit board 130 through the light inlet hole 170; while along the second reflected light area Z2, for example, The light of the reflected light path R2, which does not illuminate the area of the light picker 135, is blocked from the semiconductor structure 100 by the upper cover 162 of the optical blocking layer 160. In this way, in the first embodiment of the invention, the light emitted by the light-emitting chip 120 is blocked by the wall 161 of the optical blocking layer 160 and will not be directly received by the light picker 135 on the circuit board 130, so that the light picker 135 The detection effect is more accurate and the crosstalk interference between the light-emitting chip 120 and the circuit board 130 is reduced. In addition, the reflected light that does not illuminate the light picker 135 (for example, the light in the second reflected light area Z2 along the second reflected light path R2) is also blocked by the upper cover 162 of the optical blocking layer 160, so that the reflected light The light will not enter the light collecting area of the light picker 135 due to scattering or diffraction, thereby making the detection effect of the light picker 135 more accurate.

FIG. 4 shows a side cross-sectional end view of a semiconductor structure according to a second embodiment of the present invention. The semiconductor structure 200 according to the second embodiment of the present invention includes a substrate 210, a light-emitting chip 220, a circuit board 230, a first light-transmissive layer 240, a second light-transmissible layer 250, a light blocking layer 260, a light-collecting hole 270, a light-emitting Hole 280 and other components, including the substrate 210, the light-emitting chip 220, the first connection line 221 of the light-emitting chip 220, the circuit board 230, the second connection line 232 of the circuit board 230, the first light-transmissive layer 240, the second light-transmissive layer The layer 250, the light-receiving hole 270, the light-emitting hole 280, and the mounting surface 214 respectively correspond to the substrate 110, the light-emitting chip 120, the first connection line 121 of the light-emitting chip 120, the circuit board 130, and the circuit board 130 in the first embodiment. The second connection line 132, the first light-transmissive layer 140, the second light-transmissible layer 150, the light-receiving hole 170, the light-emitting hole 180, and the mounting surface 112 are omitted here for the sake of brevity.

The optical blocking layer 260 of the second embodiment of the invention may include a first wall 261, a second wall 263, a third wall 264 and an upper cover 262. The first wall 261 , the second wall 263 and the third wall 264 are respectively inserted into the base plate 210 and fixedly connected to the base plate 210 . The first wall 261 is used to block the light emitted by the light-emitting chip 220 from being directly lateral to the circuit board 230 . The light detector 235 receives. The second wall 263 and the third wall 264 are respectively provided on two opposite sides of the substrate 210, that is, they are provided on two opposite sides of the first wall 261, so as to prevent the circuit board 230 and the light-emitting chip 220 from being affected by the semiconductor. Interference from other parts on the device other than the structure 200, such as crosstalk interference that may be caused by other electronic parts. The upper cover 262 is fixedly connected to the first wall 261, the second wall 263 and the third wall 264, from the second wall 263 to the third wall in a direction perpendicular to the upright direction of the first wall 261, the second wall 263 and the third wall 264. The three walls 264 extend and entirely cover the upper surfaces of the first light-transmissive layer 240 and the second light-transmissible layer 250 . The upper cover 262 is provided with a light emitting hole 280 and a light receiving hole 270 .

5A to 5F show schematic process diagrams of a semiconductor structure according to the first embodiment of the present invention. In the die attach process shown in FIG. 5A , the light-emitting chip 120 and the circuit board 130 are bonded to the mounting surface 112 of the substrate 110 through adhesives 122 and 131 respectively, and an electrode 113 is provided on the mounting surface 112 . ,114. In the wire bonding process shown in FIG. 5B , the first connection wire 121 and the second connection wire 132 electrically connect the light-emitting chip 120 and the circuit board 130 to the electrode 114 and the electrode 113 respectively. In the molding process shown in FIG. 5C , the light-transmissive layer 190 is molded on the substrate 110 to enclose and completely cover the circuit board 130 and the light-emitting chip 120 on the substrate 110 . In the pre-saw process shown in FIG. 5D , the light-transmissive layer 190 is cut into a first light-transmissive layer 140 and a second light-transmissible layer 150 , where a first light-transmissive layer 140 is formed with The first boss 141 is formed on the second light-transmissive layer 150 . In addition, a first recess 111 cut into the substrate 110 is formed between the first light-transmissive layer 140 and the second light-transmissible layer 150 . In the dispensing process shown in FIG. 5E , the optical blocking layer 160 is injected into the first recess 111 and the first light-transmissive layer 140 and the second light-transmissible layer 150 surrounding the first boss 141 and the second boss 151 The defined space is such that the optical blocking layer 160 forms the wall 161 and the upper cover 162 in the space, and the upper surface of the upper cover 162 is flush with the upper surfaces of the first boss 141 and the second boss 151 . Thereby, the first light-transmissive layer 140 forms a light-receiving hole 170 in the upper cover 162 through the first boss 141 , and the second light-transmissible layer 150 forms a light-emitting hole 180 in the upper cover 162 through the second boss 151 . Finally, in the top view of the package after cutting (PKG-saw) shown in FIG. 5F , the light-emitting chip 120 adhered to the substrate 110 by the adhesive 122 can be seen from the light-emitting hole 180 and the circuit board 130 can be seen from the light-receiving hole 170 The light picker 135 on.

6A to 6G show schematic process diagrams of a semiconductor structure according to a second embodiment of the present invention. The die attachment (Die Attach) process shown in Figure 6A, the wire bonding (Wire Bonding) process shown in Figure 6B, the molding (Molding) process shown in Figure 6C and the package cutting (PKG-saw) shown in Figure 6G are respectively different from the above figures. 5A to 5C are the same as FIG. 5F and will not be described again for the sake of simplicity. In the pre-saw process shown in FIG. 6D , the light-transmissive layer 290 is cut into a first light-transmissive layer 240 and a second light-transmissible layer 250 , where a first light-transmissive layer 240 is formed with The first boss 241 is formed on the second light-transmissive layer 250 . In addition, a first recess 211 cut into the substrate 210 is formed between the first light-transmissible layer 240 and the second light-transmissible layer 250; and a cut-to-cut groove is formed near the outer edge of the first light-transmissible layer 240. The second recess 212 in the substrate 210 and the third recess 213 cut into the substrate 210 are formed near the outer edge of the second light-transmissible layer 250 . In the dispensing process shown in FIG. 6E , the optical blocking layer 260 is injected into the first concave portion 211 , the second concave portion 212 , the third concave portion 213 and the first light-transmissive portion surrounding the first boss 241 and the second boss 251 . The space defined by the layer 240 and the second light-transmissive layer 250 allows the optical blocking layer 260 to form the first wall 261, the second wall 263, and the third wall 264 and connect the first wall 261, the second wall 263, and the third wall 264. The upper cover 262 is in this space, and the upper surface of the upper cover 262 is flush with the upper surfaces of the first boss 241 and the second boss 251 . Thereby, the first light-transmissive layer 240 forms a light-receiving hole 270 in the upper cover 262 through the first boss 241 , and the second light-transmissible layer 250 forms a light-inlet hole 280 in the upper cover 262 through the second boss 251 . Finally, in the top view of FIG. 6G , the light-emitting chip 220 adhered to the substrate 210 by the adhesive 222 can be seen from the light-emitting hole 280 and the light picker 235 on the circuit board 230 can be seen from the light-collecting hole 270 .

FIG. 6F shows an end view taken along the section line 6F-6F of FIG. 6E , with the optical blocking layer 260 enclosing and covering the circuit board 230 enclosed by the first light-transmitting layer 240 on the substrate 210 . Similarly, the optical blocking layer 260 encloses and covers the light-emitting wafer 220 enclosed by the second light-transmitting layer 250 on the substrate 210 .

7A to 7J show another process diagram of a semiconductor structure according to the first embodiment of the present invention. The die attachment (Die Attach) process shown in Figure 7A, the wire bonding (Wire Bonding) process shown in Figure 7B, and the molding (Molding) process shown in Figure 7C are respectively the same as the above-mentioned Figures 5A to 5C, and are here for the sake of simplicity. No further description will be omitted. In the first pre-saw process shown in FIG. 7D , the light-transmissive layer 190 is cut into a first light-transmissive layer 140 and a second light-transmissible layer 150 , where in the first light-transmissive layer A first recess 111 cut into the substrate 110 is formed between 140 and the second light-transmissive layer 150, and the first recess 111 is connected to the upper surfaces of the first light-transmissive layer 140 and the second light-transmissible layer 150 respectively. Two stepped sections are formed. In the first dispensing process shown in FIG. 7E , the optical blocking layer 160 is injected into and fills the first recess 111 to form a T-shaped wall with a cross-section. The upper surface of the optical blocking layer 160 is in contact with the first light-transmissive layer 140 It is flush with the upper surface of the second light-transmissive layer 150 . In the second pre-saw process shown in FIG. 7F , a second pre-saw is performed, and the first light-transmissive layer 140 , the second light-transmissible layer 150 and the optical blocking layer 160 are jointly formed. Grooves are cut on the surface, and first bosses 141 and second bosses 151 are respectively formed on the first light-transmissive layer 140 and the second light-transmissible layer 150 . In the second dispensing process shown in Figure 7G, optical blocking material is injected into the trench by dispensing to form an additional optical blocking layer 160', and a covering optical blocking layer 160 is formed as shown in the top view of Figure 7I additional optical blocking layer 160'. In the package cutting (PKG-saw) process shown in FIG. 7H, the additional optical barrier layer 160' is cut so that its upper surface becomes flat, and the cut optical barrier layer 160' is in contact with the first boss 141 and the first boss 141. There is a certain height difference between the two bosses 151 . The first boss 141 forms the light-receiving hole 170 between the additional optical blocking layers 160', and the second boss 151 forms the light-emitting hole 180 between the additional optical blocking layers 160'. In this process embodiment, more than one photodetector and light-emitting chip can be disposed on the substrate 110 . For example, as shown in the top view after completing the package cutting process in FIG. 7I , two light-emitting wafers 120 and 120' can be seen from the light-emitting hole 180 and two light pickers on the circuit board 130 can be seen from the light-receiving hole 170 ( first light picker 133, second light picker 134).

7J shows an end view taken along the section line 7J-7J from FIG. 7I, with the additional optical blocking layer 160' covering the circuit board 130 with the first light-transmitting layer 140 surrounding the substrate 110. Similarly, the optical blocking layer 160' covers the light-emitting wafers 120, 120' enclosed by the second light-transmitting layer 150 on the substrate 110.

The content disclosed above is only one of the best possible embodiments of this invention, and does not limit the patentable scope of this invention. All equivalent technical changes made by using the description and drawings of this invention are included in this invention. within the scope of the patent application.

100, 200: Semiconductor structure 110, 210: Substrate 111, 211: first concave part 212:Second recess 213: The third concave part 112, 214: Installation surface 113, 114, 215, 216: Electrode 120, 120’, 220: Luminous chip 121, 221: first connection line 130, 230: Circuit board 131, 122, 222, 231: Viscose 132, 232: Second connection line 133:The first light picker 134: Second light picker 135, 235: Light picker 140, 240: first light-transmissive layer 141, 241: The first boss 150, 250: Second light-transmissive layer 151, 251: Second boss 160, 260: Optical barrier layer 160’: Additional optical blocking layer 161: wall 261:First wall 263:Second wall 264:Third wall 162, 262: Upper cover 170, 270: Light receiving hole 180, 280: Luminous hole 190: Translucent layer B: Optical barrier layer D1~D3: Width I: incident light path O:Object R: Reflected light path R1: first reflected light path R2: second reflected light path S:Substrate Z0: incident light area Z1: first reflected light area Z2: The second reflected light area

FIG. 1 shows a side cross-sectional end view and a schematic light path diagram of a semiconductor structure in the prior art.

FIG. 2A shows a side cross-sectional end view of a semiconductor structure according to a first embodiment of the present invention.

FIG. 2B shows a top view of a semiconductor structure according to the first embodiment of the present invention.

FIG. 3 shows a side cross-sectional end view and a schematic light path diagram of the semiconductor structure according to the first embodiment of the present invention.

FIG. 4 shows a side cross-sectional end view of a semiconductor structure according to a second embodiment of the present invention.

5A to 5F show schematic process diagrams of a semiconductor structure according to the first embodiment of the present invention.

6A to 6G show schematic process diagrams of a semiconductor structure according to a second embodiment of the present invention.

7A to 7J show another process diagram of a semiconductor structure according to the first embodiment of the present invention.

100:Semiconductor Structure

110:Substrate

112:Installation surface

113, 114: Electrode

120:Light-emitting chip

121: First connection line

130:Circuit board

131:Viscose

132: Second connection line

140: First light-transmissive layer

150: Second light-transmissive layer

160: Optical barrier layer

161: wall

162: Upper cover

170: Light receiving hole

180: Luminous hole

Claims (10)

A semiconductor structure comprising: a base plate having a mounting surface; A light-emitting chip and a circuit board, the light-emitting chip and the circuit board are arranged on the mounting surface; a first light-transmissive layer enclosing the circuit board; a second light-transmissive layer enclosing the light-emitting chip; and An optical blocking layer is provided on the substrate and between the light-emitting chip and the circuit board, wherein the optical blocking layer includes: at least one wall inserted into the base plate; and The upper cover is connected to the at least one wall and covers a part of the first light-transmissive layer to form a light-collecting hole through the first light-transmissible layer. The semiconductor structure of claim 1, wherein the circuit board is a light picker. The semiconductor structure according to claim 2, wherein the position of the light-collecting hole corresponds to a light-collecting area of the light picker. The semiconductor structure of claim 1, wherein the optical blocking layer is formed by dispensing glue and the glue is black glue. The semiconductor structure of claim 1, wherein the optical blocking layer is formed by stamping. The semiconductor structure of claim 1, wherein the position of the light collecting hole does not correspond to the connection line connecting the circuit board to the substrate. The semiconductor structure as claimed in claim 1, wherein the upper cover is formed by dispensing. The semiconductor structure of claim 1, wherein the upper cover covers a portion of the second light-transmissive layer to form a light-emitting hole through the second light-transmissive layer. The semiconductor structure of claim 8, wherein the position of the light-emitting hole corresponds to the light-emitting chip. The semiconductor structure of claim 1, wherein the width of the at least one wall is greater than the width of the circuit board and the light-emitting chip.