TWM589363U - Wafer cleaning and drying device - Google Patents

Abstract

A wafer cleaning and drying device is provided. The wafer cleaning and drying device includes a cleaning tank, a support, and a liquid volatile solvent introduction tube. The cleaning liquid is stored in the cleaning tank, and the cleaning tank has a water inlet disposed at a lower side, an overflow port disposed at an upper portion, and a drain opening disposed at a bottom. The support is disposed in the cleaning tank to vertically carry a wafer. The liquid volatile solvent introduction tube for introducing a liquid volatile solvent from a periphery of the cleaning tank.

Description

Wafer cleaning and drying device

The present invention relates to a cleaning and drying device; in detail, it relates to a wafer cleaning and drying device.

In the prior art, after the wafer cleaning operation is performed in a wet process, the wafer needs to be dried immediately to facilitate the subsequent process.

In detail, since the finished products after wafer processing are all nano-level, the particles or chemicals remaining on the surface of the wafer during the processing process will seriously affect the yield of the finished wafer, and need to be Effectively removed from the wafer surface.

When the wafer cleaning operation is performed in a wet process, the wafer is immersed in a cleaning solution in a cleaning tank, and the remaining particles or chemicals are removed through the cleaning solution, and after the cleaning Wafers also need to effectively complete the drying operation before they can proceed to the subsequent process.

Therefore, how to use a wafer cleaning and drying device to complete the cleaning and drying operations of wafers in the shortest time is a problem that the industry urgently needs to solve.

An object of the present invention is to provide a wafer cleaning and drying method and a wafer cleaning and drying device, which can effectively remove particles or chemicals remaining on the wafer, and at the same time shorten the working time of drying the wafer, so as to minimize the time Complete wafer cleaning and drying operations.

To achieve the above purpose, a wafer cleaning and drying method disclosed by the present invention includes the following steps:

Provide a cleaning tank with one cleaning solution;

Immerse a wafer vertically into the cleaning solution;

Continue to inject cleaning liquid from one of the water inlets below the cleaning tank, so that excess cleaning liquid flows out from the overflow port above the cleaning tank;

Close the water inlet, and open one of the drains at the bottom of the cleaning tank, so that the cleaning fluid is discharged in a slow drain mode;

When one of the cleaning liquid drops above the wafer, close the drain of the cleaning tank;

Injecting a liquid volatile solvent onto the liquid surface of the cleaning solution in one or two stages to form a two liquid phase layer;

Open the drain again, and drain the cleaning fluid in slow drain mode;

When one of the liquid volatile solvents is below the lowest position of the wafer, the cleaning liquid is discharged in a rapid drainage mode; and

Introduce a high temperature nitrogen from above the cleaning tank to dry the wafer;

Among them, the steps of injecting liquid volatile solvent in a two-stage manner are

Inject the liquid volatile solvent for the first time, so that the liquid volatile solvent has a first height;

Standing liquid volatile solvent; and

The liquid volatile solvent is injected again so that the liquid volatile solvent reaches a second height.

In the new wafer cleaning and drying method, the liquid volatile solvent has a first height between 5 and 6 mm, and the liquid volatile solvent has a second height between 10 and 15 mm.

In the new wafer cleaning and drying method, the flow rate of the slow drain mode is between 3.5~5 L/M.

In the new wafer cleaning and drying method, when high temperature nitrogen is introduced to dry the wafer, the flow rate of high temperature nitrogen is between 380~430 L/M.

In the wafer cleaning and drying method of the present invention, when high temperature nitrogen is introduced from above the cleaning tank to blow dry the wafer, an air extraction step is further included, which is to simultaneously extract high temperature nitrogen through an air extraction system at the bottom of the cleaning tank. And one of the suction pressures of the suction system is between 60~90 Pa.

In the new wafer cleaning and drying method, the cleaning liquid is heated deionized water, and the liquid volatile solvent is liquid isopropyl alcohol.

To achieve the above purpose, a wafer cleaning and drying device of the present invention includes a cleaning tank, a support, and a liquid volatile solvent introduction pipeline. A cleaning liquid is stored in the cleaning tank, and the cleaning tank has a water inlet provided at the lower side, an overflow outlet provided at the upper side, and a drain outlet provided at the bottom. The holder is disposed in the cleaning tank to vertically carry a wafer. The liquid volatile solvent introduction pipeline is used to introduce a liquid volatile solvent from the peripheral edge above the cleaning tank.

In the wafer cleaning and drying device of the present invention, a drainage plate is further provided above the cleaning tank. When the liquid volatile solvent flows out of the liquid volatile solvent introduction pipeline, the drainage plate is used to guide the liquid volatile solvent to be directly injected into one of the cleaning solutions Liquid level.

The wafer cleaning and drying device of the present invention further includes an air extraction system, which is disposed at the bottom of the cleaning tank.

In the new wafer cleaning and drying device, the cleaning liquid is heated deionized water, and the liquid volatile solvent is liquid isopropyl alcohol.

The present invention relates to a wafer cleaning and drying method and a wafer cleaning and drying device, which can effectively remove particles or chemicals remaining on the wafer, at the same time shorten the working time of drying the wafer, thereby completing the crystal in the shortest time Round cleaning and drying operations.

In the drawings, FIG. 1 is a step diagram of a new wafer cleaning and drying method. 2 to 11 are schematic diagrams corresponding to the steps of FIG. 1.

In detail, as shown in FIG. 1, a wafer cleaning and drying method disclosed by the present invention includes the following steps:

S1: Provide one cleaning tank with one cleaning solution.

As shown in FIG. 3, a cleaning tank 110 storing a cleaning liquid 200 is provided, and the cleaning liquid 200 is injected from a water inlet 112 below the cleaning tank 110.

S2: Immerse a wafer vertically into the cleaning solution.

As shown in FIG. 4, after the cleaning liquid 200 in the cleaning tank 110 is injected to a certain height, a wafer 300 is vertically immersed in the cleaning liquid 200 so that the wafer 300 is carried by a holder 120 and the wafer 300 It is completely soaked in the cleaning fluid 200.

S3: Inject cleaning fluid continuously from one of the water inlets below the cleaning tank, so that excess cleaning fluid flows out from the overflow outlet above the cleaning tank.

Please refer to FIG. 5 together. After the wafer 300 is vertically immersed in the cleaning liquid 200 and the wafer 300 is completely immersed in the cleaning liquid 200, the cleaning liquid 200 is continuously injected into the water inlet 112 below the cleaning tank 110 The wafer 200 is rinsed. As a result, after the wafer 200 is rinsed, the cleaning liquid 200 with particles or chemicals will be pushed by the newly injected cleaning liquid 200 under the cleaning tank 110 to become an excess cleaning liquid 200, and then from above the cleaning tank 110 One overflow port 114 flows out.

That is, particles or chemicals remaining on the surface of the wafer 300 during the wafer processing process can be effectively removed at this stage.

The wafer 300 still has other subsequent processing steps after the cleaning operation is completed, so the cleaned wafer 300 needs to be quickly dried to ensure that the subsequent related processing steps can proceed smoothly. Therefore, the following drying steps will be explained:

S4: Close the water inlet, and open one of the drain outlets at the bottom of the cleaning tank, so that the cleaning fluid is discharged in a slow drain mode.

As shown in FIG. 6, since the wafer 300 has effectively removed the particles or chemicals remaining on the surface of the wafer 300 in the foregoing steps, after closing the water inlet 112, one of the drains at the bottom of the cleaning tank 110 will be opened At 116, the cleaning solution 200 is discharged from the bottom of the cleaning tank 110 in a slow drainage mode.

S5: When one of the cleaning liquid drops above the wafer, close the drain of the cleaning tank.

Next, as shown in FIG. 7, when the cleaning liquid 200 is discharged from the bottom of the cleaning tank 110 in a slow drainage mode, so that a liquid level of the cleaning liquid 200 drops above the wafer 300, the drain port 116 of the cleaning tank 110 is closed.

S6: Injecting a liquid volatile solvent onto the liquid surface of the cleaning liquid in a two-stage manner to form a two-liquid phase layer.

As shown in FIG. 8, when the liquid level of the cleaning liquid 200 drops above the wafer 300 and the drain 116 of the cleaning tank 110 is closed, a liquid volatile solvent 400 is injected into the liquid of the cleaning liquid 200 in a two-stage manner To form a two-liquid phase layer.

S7: Open the drain again, and drain the cleaning fluid in the slow drain mode.

As shown in FIG. 9, after the two-liquid-phase layer is formed, the drain port 116 is opened again, and the cleaning solution 200 is discharged in the slow drain mode. In this way, in the process of slowly discharging the cleaning liquid 200, the liquid volatile solvent 400 will be able to completely contact the wafer 300 from top to bottom and gradually volatilize. Since the liquid volatile solvent 400 will take away the moisture and impurities remaining on the wafer 300 during the volatilization process, this step will surely complete the drying operation of the wafer 300.

S8: When one of the liquid volatile solvents is lower than the lowest position of the wafer, the cleaning liquid is discharged in a rapid drainage mode.

Next, as shown in FIG. 10, when one of the liquid levels of the liquid volatile solvent 400 is lower than the lowest position of the wafer 300, it means that the liquid volatile solvent 400 has covered the surface of the wafer 300 and is no longer subject to the cleaning liquid Due to the effect of 200, the cleaning solution 200 can be discharged from the cleaning tank 110 in a rapid drainage mode to facilitate subsequent removal of the wafer 300 from the cleaning tank 110.

S9: Introduce a high temperature nitrogen gas from above the cleaning tank to blow dry the wafer.

Finally, as shown in FIG. 11, after the cleaning solution 200 is completely discharged from the cleaning tank 110, a high temperature nitrogen 500 can be introduced from above the cleaning tank 110 to accelerate the volatilization of the liquid volatile solvent 400 to blow dry the wafer 300.

Among them, the step of injecting the liquid volatile solvent 400 in the S6: two-stage method may further include the following steps:

S61: The liquid volatile solvent is injected for the first time, so that the liquid volatile solvent has a first height.

S62: standing liquid volatile solvent; and

S63: Inject liquid volatile solvent again to make the liquid volatile solvent reach a second height.

In detail, as shown in FIG. 12, since the initial process of injecting the liquid volatile solvent 400 into the liquid surface of the cleaning liquid 200, the liquid surface of the cleaning liquid 200 will show an uneven turbidity, so in the S61 stage Only a small amount of liquid volatile solvent 400 with a first height H1 will be injected first.

Next, as shown in step S62, after the liquid volatile solvent 400 is allowed to stand for a first time so that the cleaning liquid 200 and the liquid volatile solvent 400 assume the initial two-liquid phase layer, as shown in FIG. 13 and step S63, the liquid is injected again The volatile solvent 400 makes the liquid volatile solvent 400 reach the second height H2.

At this time, since the liquid phase volatile solvent 400 is already above the initial two-liquid-phase layer after standing at step 62, the liquid volatile solvent 400 re-injected in step S63 will not be in contact with the cleaning solution 200. The situation of surface contact can avoid the occurrence of turbidity and shorten the waiting time of the liquid volatile solvent 400 at rest.

In other words, in the present invention, the step of injecting the liquid volatile solvent 400 in a two-stage manner is used to shorten the waiting time after the liquid volatile solvent is injected into the liquid level of the cleaning liquid in the prior art, and thus increase the waiting time. Working efficiency of wafer cleaning and drying device method.

In the new wafer cleaning and drying method, the liquid volatile solvent 400 injected in the first stage has a first height H1 between 5 and 6 mm. This height allows the liquid volatile solvent injected in the second stage 400 does not come into contact with the cleaning fluid 200, thereby effectively avoiding the phenomenon of turbidity. After the liquid volatile solvent 400 is injected in the second stage, the liquid volatile solvent 400 has a second height H2 (ie, total height) between 10 and 15 mm, to ensure that in step S7 shown in FIG. 9 When the liquid volatile solvent 400 contacts the wafer 300 from top to bottom and gradually volatilizes, a sufficient amount of the liquid volatile solvent 400 can contact the wafer 300.

In the new wafer cleaning and drying method, the flow rate of the slow drain mode is between 3.5~5 L/M. This flow rate can ensure that the liquid surfaces of the cleaning liquid 200 and the liquid volatile solvent 400 maintain a gentle decrease during the drainage process, so that the liquid volatile solvent 400 contacts the wafer 300 and evaporates accordingly.

In the new wafer cleaning and drying method, when high-temperature nitrogen 500 is introduced to blow dry the wafer 300, the flow rate of the high-temperature nitrogen 500 is between 380 and 430 L/M. In addition, when high-temperature nitrogen 500 is introduced from above the cleaning tank 110 to blow dry the wafer 300, a pumping step may be further included, which is to simultaneously extract high-temperature nitrogen 500 through a pumping system 140 at the bottom of the cleaning tank 110, and pump The gas system 140 has a pumping pressure between 60-90 Pa.

The introduction of high-temperature nitrogen 500 can accelerate the drying operation of wafer 300, and the use of air extraction system 140 helps to quickly discharge the gas with water or other impurities after the volatile liquid volatile solvent 400 volatilizes, avoiding the crystal again. Circle 300 caused pollution.

In a preferred embodiment of the new wafer cleaning and drying method, the cleaning liquid 200 is heated deionized water, and the liquid volatile solvent 400 is liquid isopropyl alcohol.

Please refer to FIG. 3 to FIG. 11 again. The present invention further discloses a wafer cleaning and drying device 100, which includes a cleaning tank 110, a holder 120 and a liquid volatile solvent introduction pipeline 130 for performing the aforementioned FIG. 1 The wafer cleaning and drying method.

Therein, a cleaning liquid 200 is stored in the cleaning tank 110, and the cleaning tank 100 has a water inlet 112 disposed below, an overflow 114 disposed above, and a drain 116 disposed at the bottom. The holder 120 is disposed in the cleaning tank 110 to vertically support a wafer 300. The liquid volatile solvent introduction line 130 is used to introduce a liquid volatile solvent 400 from the periphery above the cleaning tank 110.

Please refer to FIGS. 12 and 13 successively. In the wafer cleaning and drying apparatus 100 of the present invention, a drainage plate 118 is further provided above the cleaning tank 110. After the liquid volatile solvent 400 flows out of the liquid volatile solvent introduction line 130, through the setting of the drainage plate 118, the liquid volatile solvent 400 can be guided to be directly injected into a liquid surface of the cleaning liquid 200. In this way, the use of the drainage plate 118 can not only prevent the liquid volatile solvent 400 from flowing through the overflow port 114 above the cleaning tank 110 and be contaminated, but also the liquid volatile solvent 400 guided by the drainage plate 118 can also reduce the injection cleaning The turbidity generated at the liquid surface of the liquid 200 achieves the effect of shortening the waiting time required to stand still after injecting the liquid volatile solvent to the liquid surface of the cleaning liquid in the prior art.

As shown in FIGS. 3-11, the new wafer cleaning and drying device further includes an exhaust system 140, which is disposed at the bottom of the cleaning tank 110 to assist the drying operation of the wafer 200 and shorten the drying time.

In summary, through the two-stage liquid volatile solvent injection method of the novel wafer cleaning and drying method and the drainage plate of the wafer cleaning and drying device, when the liquid volatile solvent is injected into the liquid of the cleaning solution When the surface is used, the waiting time for the liquid volatile solvent and the cleaning liquid to form a stable two-liquid layer can be shortened, and the particles or chemicals remaining on the wafer can be effectively removed, thereby completing the cleaning of the wafer in the shortest time And drying operations.

The above-mentioned embodiments are only used to exemplify the implementation of the new type and explain the technical features of the new type, but not to limit the protection scope of the new type. Any changes or equivalence arrangements that can be easily completed by those familiar with this technology belong to the scope claimed by this new model, and the scope of protection of the rights of this new model shall be subject to the scope of patent application.

100‧‧‧wafer cleaning and drying device 110‧‧‧Cleaning tank 112‧‧‧ Water inlet 114‧‧‧Overflow 116‧‧‧Drain 118‧‧‧Drainage plate 120‧‧‧Bracket 130‧‧‧Liquid volatile solvent introduction pipeline 140‧‧‧Suction system 200‧‧‧cleaning liquid 300‧‧‧ Wafer 400‧‧‧Liquid volatile solvent 500‧‧‧High temperature nitrogen H1‧‧‧ First height H2‧‧‧second height

FIG. 1 is a step diagram of a novel wafer cleaning and drying method. FIG. 2 is a step diagram of injecting a liquid volatile solvent in a two-stage manner in the new wafer cleaning and drying method. 3 to 11 are schematic diagrams corresponding to the flow of FIG. 1. Figures 12-13 are schematic diagrams of the drainage plate above the cleaning tank in the new wafer cleaning and drying device.

100‧‧‧wafer cleaning and drying device

110‧‧‧Cleaning tank

112‧‧‧ Water inlet

114‧‧‧Overflow

116‧‧‧Drain

118‧‧‧Drainage plate

120‧‧‧Bracket

130‧‧‧Liquid volatile solvent introduction pipeline

140‧‧‧Suction system

200‧‧‧cleaning liquid

300‧‧‧ Wafer

400‧‧‧Liquid volatile solvent

Claims (4)

A wafer cleaning and drying device, including: A washing tank, in which a washing liquid is stored, the washing tank has a water inlet arranged at the lower side, an overflow outlet arranged at the upper side, and a drain outlet arranged at the bottom; A bracket provided in the cleaning tank to vertically support a wafer; and A liquid volatile solvent introduction pipeline is used to introduce a liquid volatile solvent from the peripheral edge above the cleaning tank. The wafer cleaning and drying device according to claim 1, wherein a drainage plate is further provided above the cleaning tank, and when the liquid volatile solvent flows out of the liquid volatile solvent introduction pipe, the drainage plate is used to guide the liquid volatilization The sexual solvent is directly injected into one of the surfaces of the cleaning solution. The wafer cleaning and drying device according to claim 1 further includes an air extraction system, which is disposed at the bottom of the cleaning tank. The wafer cleaning and drying device according to claim 1, wherein the cleaning liquid is heated deionized water, and the liquid volatile solvent is liquid isopropyl alcohol.

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