TWI725745B - Substrate drying chamber - Google Patents
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- TWI725745B TWI725745B TW109105408A TW109105408A TWI725745B TW I725745 B TWI725745 B TW I725745B TW 109105408 A TW109105408 A TW 109105408A TW 109105408 A TW109105408 A TW 109105408A TW I725745 B TWI725745 B TW I725745B
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- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
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Abstract
Description
本發明係關於一種基板乾燥腔。更特定言之,本發明係關於一種容許在一乾燥程序之後最終排放一超臨界流體時,藉由使用形成於一下殼體中之一異物排放部件排放浸漬於一密封部件中或存在於密封部件周圍之異物(諸如顆粒)來防止異物被引入至一腔中之一基板上之一問題,且容許藉由引發超臨界流體之一對稱流動,在基板乾燥腔內部均勻地分配且供應超臨界流體及排放該超臨界流體而提高基板乾燥效率之基板乾燥腔。The invention relates to a substrate drying chamber. More specifically, the present invention relates to a method for allowing a supercritical fluid to be finally discharged after a drying process, by using a foreign substance discharging member formed in the lower housing to discharge immersed in a sealing member or present in the sealing member Surrounding foreign matter (such as particles) prevents foreign matter from being introduced into a substrate in a cavity, and allows a symmetrical flow of a supercritical fluid to uniformly distribute and supply the supercritical fluid inside the substrate drying chamber And a substrate drying chamber for discharging the supercritical fluid to improve the efficiency of substrate drying.
一半導體裝置之製造程序包含各種程序,諸如一微影程序、一蝕刻程序、一離子植入程序及類似者。在各程序結束之後且在執行一後續程序之前,執行一清潔程序及一乾燥程序以移除殘留於一晶圓表面上之雜質及殘餘物以清潔晶圓表面。The manufacturing process of a semiconductor device includes various processes, such as a lithography process, an etching process, an ion implantation process, and the like. After each process is completed and before performing a subsequent process, a cleaning process and a drying process are performed to remove impurities and residues remaining on the surface of a wafer to clean the surface of the wafer.
例如,在一蝕刻程序之後之一晶圓之一清潔程序中,將用於清潔程序之一化學液體供應至一晶圓表面上,且接著供應去離子水(DIW)使得執行沖洗處理。在沖洗處理之後,執行一乾燥程序以移除殘留於晶圓表面上之DIW以乾燥晶圓。For example, in a cleaning process of a wafer after an etching process, a chemical liquid used for the cleaning process is supplied to a surface of a wafer, and then deionized water (DIW) is supplied to perform a rinse process. After the rinsing process, a drying process is performed to remove the DIW remaining on the surface of the wafer to dry the wafer.
例如,作為執行乾燥程序之一方法,已知一種藉由用異丙醇(IPA)取代一晶圓上之DIW來乾燥一晶圓之技術。For example, as one of the methods of performing the drying process, a technique of drying a wafer by replacing the DIW on a wafer with isopropyl alcohol (IPA) is known.
然而,如圖1中所展示,根據此一習知乾燥技術,在乾燥程序期間,出現形成於晶圓上之一圖案歸因於IPA (其係一液體)之表面張力而塌縮之一問題。However, as shown in FIG. 1, according to this conventional drying technique, during the drying process, a pattern formed on the wafer collapses due to the surface tension of IPA (which is a liquid). .
為了解決上述問題,已提出一種其中表面張力變為零之超臨界乾燥技術。In order to solve the above problems, a supercritical drying technique in which the surface tension becomes zero has been proposed.
根據此一超臨界乾燥技術,將處於一超臨界狀態之二氧化碳(CO2 )供應至一晶圓上(該晶圓之一表面在一腔中用IPA潤濕),使得晶圓上之IPA溶解於一超臨界CO2 流體中。接著,自腔逐漸排放IPA溶解於其中之超臨界CO2 流體,使得可乾燥晶圓而未使一圖案塌縮。According to this supercritical drying technology, carbon dioxide (CO 2 ) in a supercritical state is supplied to a wafer (one surface of the wafer is wetted with IPA in a cavity), so that the IPA on the wafer is dissolved In a supercritical CO 2 fluid. Then, the supercritical CO 2 fluid in which the IPA is dissolved is gradually discharged from the cavity, so that the wafer can be dried without collapsing a pattern.
圖2繪示韓國專利公開申請案第10-2017-0137243號中所揭示之一基板處理腔,該案係與使用此一超臨界流體之一基板處理裝置結合之相關技術。FIG. 2 shows a substrate processing chamber disclosed in Korean Patent Publication Application No. 10-2017-0137243, which is a related technology combined with a substrate processing apparatus using this supercritical fluid.
參考圖2,在一超臨界乾燥程序中移除一有機溶劑之一程序中,可將一有機溶劑引入至構成一高壓腔410且彼此接觸之一上主體430與一下主體420之一耦接表面上。引入至上主體430與下主體420之耦接表面上之有機溶劑變為累積於耦接表面周圍之顆粒。Referring to FIG. 2, in a process of removing an organic solvent in a supercritical drying process, an organic solvent can be introduced into a coupling surface of an
在超臨界乾燥程序結束之後,敞開腔以將經處理基板卸載至外部。在此情況中,歸因於腔之一內部與外部之間的一壓差,上主體430與下主體420之耦接表面周圍之顆粒可被引入至該腔之內部中。After the supercritical drying process ends, the cavity is opened to unload the processed substrate to the outside. In this case, due to a pressure difference between the inside and the outside of one of the cavities, particles around the coupling surface of the
根據韓國專利公開申請案第10-2017-0137243號,由於一基板定位於上主體430與下主體420之耦接表面下方,而上主體430與下主體420之耦接表面周圍之顆粒被引入至腔之內部中,故存在一些顆粒歸因於重力而被引入至該基板上之一高概率。According to Korean Patent Publication Application No. 10-2017-0137243, since a substrate is positioned below the coupling surface of the
如上文所描述,由於引入至基板上之顆粒致使一程序缺陷,因此為了防止引入顆粒,有必要在上主體430與下主體420之耦接表面周圍額外地安裝一阻擋簾。因此,存在設備之一總體結構複雜之一問題。As described above, since the particles introduced onto the substrate cause a process defect, it is necessary to additionally install a barrier curtain around the coupling surface of the
此外,根據包含韓國專利公開申請案第10-2017-0137243號之相關技術,由於用於供應一初始增壓用超臨界流體之一下供應埠422及用於在一基板之乾燥之後排放超臨界流體之一排放埠426未定位於下主體420之一中心處,因此當供應及排放超臨界流體時,形成超臨界流體之一不對稱流動,使得難以在腔中均勻地分配且供應超臨界流體及自腔排放超臨界流體。因此,出現乾燥效率降級之一問題。In addition, according to the related technology including Korean Patent Application No. 10-2017-0137243, the
[相關技術文件] [專利文件] (專利文件1)韓國專利公開申請案第10-2017-0137243號(公開日期:2017年12月13日,標題:Apparatus and method for treating substrate)。[Related technical documents] [Patent Document] (Patent Document 1) Korean Patent Publication Application No. 10-2017-0137243 (Publication date: December 13, 2017, title: Apparatus and method for treating substrate).
技術問題technical problem
本發明之一技術目的係在一乾燥程序之後最終排放一超臨界流體時,藉由使用形成於一下殼體中之一異物排放部件排放浸漬於一密封部件中或存在於該密封部件周圍之異物(諸如顆粒)來防止異物被引入至一腔中之一基板上之一問題。One of the technical objects of the present invention is to discharge the foreign matter immersed in a sealing member or existing around the sealing member by using a foreign matter discharging member formed in the lower casing when finally discharging a supercritical fluid after a drying process (Such as particles) to prevent foreign matter from being introduced onto a substrate in a cavity.
本發明之另一技術目的係藉由將基板配置於一高度高於一下殼體與一上殼體之一耦接表面之基板放置板上而防止以下之一問題:其中當乾燥程序結束且敞開腔時,提供於下殼體與上殼體之耦接表面上之一密封部件周圍的顆粒歸因於重力而根據該基板與該耦接表面之間的一高度差被引入至基板上。Another technical purpose of the present invention is to prevent one of the following problems by arranging the substrate on a substrate placement plate that is higher than the coupling surface of a lower casing and an upper casing: During the cavity, the particles provided around a sealing member on the coupling surface of the lower casing and the upper casing are introduced onto the substrate due to gravity due to a height difference between the substrate and the coupling surface.
本發明之又一技術目的係透過一個整合式供應/排放埠提供一初始增壓用超臨界流體之一供應路徑及在一基板之乾燥之後形成於基板上之一有機溶劑溶解於其中之一超臨界流體之一排放路徑,藉此藉由引發所供應及排放之超臨界流體之一對稱流動以在一腔中均勻地分配且供應超臨界流體及自腔排放超臨界流體而提高基板乾燥效率。Another technical purpose of the present invention is to provide a supply path of a supercritical fluid for initial pressurization through an integrated supply/discharge port and an organic solvent formed on the substrate after drying of a substrate is dissolved in one of the supercritical fluids. A discharge path of the critical fluid, whereby a symmetric flow of the supercritical fluid supplied and discharged is induced to uniformly distribute and supply the supercritical fluid in a cavity and discharge the supercritical fluid from the cavity to improve the drying efficiency of the substrate.
本發明之又一技術目的係使用基板放置必不可少之一基板放置板來阻擋在一乾燥程序結束之後敞開腔時再次引入之顆粒,在乾燥程序之一初始階段阻擋初始增壓用超臨界流體直接流向一基板表面以防止形成於基板上之一圖案塌縮,防止初始增壓用超臨界流體中可能含有之顆粒累積於基板上之一問題或減少顆粒之累積量,且因歸因於基板放置板所佔據之一體積減小腔之一工作體積而減少一乾燥程序時間。問題解決方案 Another technical purpose of the present invention is to use a substrate placement plate, which is essential for substrate placement, to block particles that are reintroduced when the cavity is opened after the end of a drying process, and to block the supercritical fluid for initial pressurization at an initial stage of the drying process Flow directly to the surface of a substrate to prevent a pattern formed on the substrate from collapsing, prevent particles that may be contained in the supercritical fluid for initial pressurization from accumulating on the substrate, or reduce the accumulation of particles, and due to the substrate The volume occupied by the placement plate reduces the working volume of the cavity and reduces the time of a drying process. Problem solution
一種根據本發明之基板乾燥腔包含:一上殼體;一下殼體,其可拆卸地耦接至該上殼體;一密封部件,其提供於該下殼體與該上殼體之一耦接表面上;一基板放置板,其耦接至該下殼體之一底表面且其上安置一基板,被一有機溶劑潤濕之一圖案形成於該基板上;一上供應埠,其形成於該上殼體之一中央區中以指向該基板放置板,且經構形以提供一乾燥用超臨界流體之一供應路徑;一整合式供應/排放埠,其形成於該下殼體中,且經構形以根據該乾燥用超臨界流體之一供應提供一初始增壓用超臨界流體之一供應路徑及其中在該基板之乾燥之後該有機溶劑溶解於該乾燥用超臨界流體中之一混合流體之一排放路徑;及一異物排放部件,其形成於該下殼體中,且經構形以提供浸漬於該密封部件中或存在於該密封部件周圍之異物透過其引入及排放至外部之一路徑。A substrate drying chamber according to the present invention includes: an upper casing; a lower casing, which is detachably coupled to the upper casing; and a sealing member, which is provided for coupling between the lower casing and the upper casing On the surface; a substrate placement board, which is coupled to a bottom surface of the lower housing and a substrate is placed on it, wetted by an organic solvent, a pattern is formed on the substrate; an upper supply port, which forms In a central area of the upper casing to point to the substrate placement plate, and configured to provide a supply path of a supercritical fluid for drying; an integrated supply/discharge port formed in the lower casing , And is configured to provide a supply path of an initial pressurizing supercritical fluid according to a supply of the drying supercritical fluid and the organic solvent is dissolved in the drying supercritical fluid after the substrate is dried A discharge path of a mixed fluid; and a foreign matter discharge member formed in the lower housing and configured to provide foreign matter immersed in the sealing member or present around the sealing member through which the foreign matter is introduced and discharged to One of the external paths.
在根據本發明之基板乾燥腔中,該異物排放部件可包含:一異物流入路徑,其沿著該下殼體之一邊緣垂直地形成以定位於該密封部件下方,且經構形以提供該等異物透過其引入之一路徑;及一異物排放路徑,其形成為自該異物流入路徑之一遠端延伸至該下殼體之一側表面,且經構形以提供該等異物透過其排放至外部之一路徑。In the substrate drying chamber according to the present invention, the foreign matter discharge member may include: a foreign material inflow path formed vertically along an edge of the lower casing to be positioned below the sealing member and configured to provide the A path through which foreign matter is introduced; and a foreign matter discharge path, which is formed to extend from a distal end of the foreign matter inflow path to a side surface of the lower housing, and is configured to provide the foreign matter to be discharged through it A path to the outside.
在根據本發明之基板乾燥腔中,在敞開該異物排放部件且因此排放該等異物之同時,可敞開或閉合提供該混合流體之該排放路徑之該整合式供應/排放埠。In the substrate drying chamber according to the present invention, the integrated supply/discharge port that provides the discharge path of the mixed fluid can be opened or closed while opening the foreign matter discharging part and thus discharging the foreign matter.
在根據本發明之基板乾燥腔中,形成該異物排放部件之該異物流入路徑可具有對應於該下殼體之該邊緣之一形狀之一凹槽之一形狀。In the substrate drying chamber according to the present invention, the foreign substance inflow path forming the foreign substance discharge member may have a shape corresponding to a shape of a groove of the edge of the lower casing.
在根據本發明之基板乾燥腔中,垂直形成之複數個通氣孔可形成於該凹槽之一底表面中,且該異物排放路徑可與該複數個通氣孔連通。In the substrate drying chamber according to the present invention, a plurality of vent holes formed vertically may be formed in a bottom surface of the groove, and the foreign matter discharge path may communicate with the plurality of vent holes.
在根據本發明之基板乾燥腔中,該密封部件及該異物流入路徑可以一燕尾形方式耦接,且當該基板乾燥腔歸因於該上殼體與該下殼體之分離而敞開時,可防止該密封部件之釋放。In the substrate drying chamber according to the present invention, the sealing member and the foreign material inflow path may be coupled in a dovetail manner, and when the substrate drying chamber is opened due to the separation of the upper casing and the lower casing, It can prevent the release of the sealing part.
在根據本發明之基板乾燥腔中,該整合式供應/排放埠可形成為自該下殼體之一個側表面延伸至另一側表面且形成於該一個側表面及該另一側表面之一中間區中以指向該基板放置板。In the substrate drying chamber according to the present invention, the integrated supply/discharge port may be formed to extend from one side surface of the lower casing to the other side surface and be formed on one of the one side surface and the other side surface Place the board in the middle area to point to the substrate.
在根據本發明之基板乾燥腔中,該整合式供應/排放埠可包含:一第一管線,其形成為從該下殼體之該一個側表面至該中間區;一共同埠,其形成於該中間區中以與該第一管線連通,且形成為指向該基板放置板;及一第二管線,其經構形以在該中間區中與該共同埠及該第一管線連通,且形成為延伸至該下殼體之該另一側表面。In the substrate drying chamber according to the present invention, the integrated supply/discharge port may include: a first pipeline formed from the side surface of the lower housing to the middle area; and a common port formed at The intermediate zone is connected with the first pipeline and is formed to point to the substrate placement plate; and a second pipeline is configured to communicate with the common port and the first pipeline in the intermediate zone, and forms To extend to the other side surface of the lower shell.
在根據本發明之基板乾燥腔中,該第一管線及該共同埠可提供該初始增壓用超臨界流體之該供應路徑,且該共同埠及該第二管線可提供其中該有機溶劑溶解於該乾燥用超臨界流體中之該混合流體之該排放路徑。In the substrate drying chamber according to the present invention, the first pipeline and the common port can provide the supply path of the supercritical fluid for the initial pressurization, and the common port and the second pipeline can provide in which the organic solvent is dissolved in The discharge path of the mixed fluid in the supercritical fluid for drying.
在根據本發明之基板乾燥腔中,該基板可安置於一高度高於該下殼體與該上殼體之該耦接表面之該基板放置板上,且當該乾燥程序結束且該下殼體及該上殼體彼此拆卸時,可防止提供於該耦接表面上之該密封部件周圍之顆粒歸因於重力而根據該基板與該耦接表面之間的一高度差被引入至該基板上。In the substrate drying chamber according to the present invention, the substrate can be placed on a substrate placement plate that is higher than the coupling surface of the lower casing and the upper casing, and when the drying process ends and the lower casing When the body and the upper casing are detached from each other, it can prevent particles provided on the coupling surface around the sealing member from being introduced to the substrate due to gravity due to a height difference between the substrate and the coupling surface on.
在根據本發明之基板乾燥腔中,可藉由該基板放置板阻擋透過該第一管線及該共同埠供應之該初始增壓用超臨界流體,使得防止該初始增壓用超臨界流體直接噴灑至該基板上。In the substrate drying chamber according to the present invention, the substrate placement plate can block the supercritical fluid for initial pressurization supplied through the first pipeline and the common port, so that the supercritical fluid for initial pressurization is prevented from being sprayed directly To the substrate.
根據本發明之基板乾燥腔可進一步包含一基板放置板支撐件,該基板放置板支撐件具有耦接至該下殼體之該底表面之一個端及耦接至該基板放置板之另一端,且經構形以在支撐該基板放置板之同時將該基板放置板與該下殼體之該底表面分離。The substrate drying chamber according to the present invention may further include a substrate placing plate support having one end coupled to the bottom surface of the lower housing and the other end coupled to the substrate placing plate, And it is configured to separate the substrate placing plate from the bottom surface of the lower casing while supporting the substrate placing plate.
在根據本發明之基板乾燥腔中,歸因於該基板放置板支撐件而存在於該下殼體之該底表面與該基板放置板之間的一第一分離空間可引發透過該整合式供應/排放埠供應之該初始增壓用超臨界流體沿著該基板放置板之一底表面移動以逐漸擴散至其中安置該基板之一處理區域中。In the substrate drying chamber according to the present invention, a first separation space existing between the bottom surface of the lower housing and the substrate placing plate due to the substrate placing plate support can be induced through the integrated supply /The supercritical fluid for initial pressurization supplied by the discharge port moves along a bottom surface of the substrate placement plate to gradually diffuse into a processing area in which the substrate is placed.
根據本發明之基板乾燥腔可進一步包含一基板支撐件,該基板支撐件具有耦接至該基板放置板之一頂表面之一個端及耦接至該基板之另一端,且經構形以在支撐該基板之同時將該基板與該基板放置板之該頂表面分離。The substrate drying chamber according to the present invention may further include a substrate support having one end coupled to a top surface of the substrate placement plate and the other end coupled to the substrate, and is configured to While supporting the substrate, the substrate is separated from the top surface of the substrate placement plate.
在根據本發明之基板乾燥腔中,歸因於該基板支撐件而存在於該基板放置板之該頂表面與該基板之間的一第二分離空間可使該基板之該底表面暴露於透過該整合式供應/排放埠供應之該初始增壓用超臨界流體及透過一噴嘴供應之該乾燥用超臨界流體,藉此減少該乾燥程序之一時間。有利發明效應 In the substrate drying chamber according to the present invention, a second separation space existing between the top surface of the substrate placement plate and the substrate due to the substrate support allows the bottom surface of the substrate to be exposed to penetration The supercritical fluid for initial pressurization supplied by the integrated supply/discharge port and the supercritical fluid for drying supplied through a nozzle, thereby reducing one time of the drying process. Beneficial invention effect
根據本發明,可在一乾燥程序之後最終排放一超臨界流體時,藉由使用形成於一下殼體中之一異物排放部件排放浸漬於一密封部件中或存在於該密封部件周圍之異物(諸如顆粒)來防止異物被引入至一腔中之一基板上之一問題。According to the present invention, when a supercritical fluid is finally discharged after a drying process, a foreign substance discharging member formed in the lower casing is used to discharge foreign substances immersed in a sealing member or existing around the sealing member (such as Particles) to prevent foreign matter from being introduced to a substrate in a cavity.
此外,當乾燥程序結束且敞開腔時,可藉由將基板配置於一高度高於一下殼體與一上殼體之一耦接表面之基板放置板上,而防止提供於該下殼體與該上殼體之該耦接表面上之一密封部件周圍之顆粒歸因於重力而根據該基板與該耦接表面之間的一高度差被引入至該基板上之一問題。In addition, when the drying process is completed and the cavity is opened, the substrate can be placed on a substrate placement plate that is higher than the coupling surface of the lower housing and an upper housing to prevent the substrate from being provided on the lower housing and the upper housing. A problem that particles around a sealing component on the coupling surface of the upper casing are introduced to the substrate due to gravity due to a height difference between the substrate and the coupling surface.
此外,根據本發明,可透過一個整合式供應/排放埠提供一初始增壓用超臨界流體之一供應路徑及一基板之乾燥之後形成於基板上之一有機溶劑溶解於其中之一超臨界流體之一排放路徑,使得可藉由引發所供應及排放之超臨界流體之一對稱流動以將該超臨界流體均勻地分配且供應至一腔中及自該腔排放該超臨界流體而提高基板乾燥效率。In addition, according to the present invention, a supply path of a supercritical fluid for initial pressurization and a substrate after drying can be provided through an integrated supply/discharge port. An organic solvent formed on the substrate is dissolved in one of the supercritical fluids. A discharge path, so that by inducing a symmetric flow of the supercritical fluid supplied and discharged to uniformly distribute and supply the supercritical fluid into a cavity and discharge the supercritical fluid from the cavity to improve the drying of the substrate effectiveness.
此外,根據本發明,可藉由以下來防止形成於基板上之一圖案之塌縮:使用配置基板必不可少之一基板放置板來阻擋在乾燥程序結束之後敞開腔時再次引入之顆粒,在該乾燥程序之一初始階段防止初始增壓用超臨界流體直接流向基板之一表面,防止初始增壓用超臨界流體中可能含有之顆粒累積於基板上之一問題,減少顆粒之沈積量,及因歸因於基板放置板所佔據之一體積減小該腔之一工作體積而減少該乾燥程序之一時間。In addition, according to the present invention, the collapse of a pattern formed on the substrate can be prevented by: using a substrate placement plate, which is essential for the layout of the substrate, to block the particles that are introduced again when the cavity is opened after the drying process is completed. The initial stage of the drying process prevents the supercritical fluid for initial pressurization from flowing directly to a surface of the substrate, prevents particles that may be contained in the supercritical fluid for initial pressurization from accumulating on the substrate, and reduces the amount of particles deposited, and The time of the drying process is reduced due to the reduction of the working volume of the cavity due to the volume occupied by the substrate placement plate.
本文中所揭示之本發明之實施例之特定結構及功能描述僅為闡釋性的且出於描述根據本發明之概念之實施例之目的,且根據本發明之概念之此等實施例可以各種形式實施且不應被解釋為限於本文中所描述之實施例。The specific structure and function descriptions of the embodiments of the present invention disclosed herein are only illustrative and for the purpose of describing embodiments according to the concept of the present invention, and these embodiments according to the concept of the present invention may be in various forms Implementation and should not be construed as being limited to the embodiments described herein.
根據本發明之概念之實施例可以各種方式修改且可具有各種形式,使得此等實施例將在隨附圖式中繪示且在本文中詳細描述。然而,應理解,並不意欲將根據本發明之概念之實施例限於本發明之特定形式,而是包含落入本發明之精神及範疇內之所有修改、等效物及替代。The embodiments according to the concept of the present invention can be modified in various ways and can have various forms, so that these embodiments will be illustrated in the accompanying drawings and described in detail herein. However, it should be understood that the embodiments according to the concept of the present invention are not intended to be limited to the specific form of the present invention, but include all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention.
術語第一、第二及類似者可用來描述各種組件,但該等組件不應受此等術語限制。此等術語僅可用於區分一個組件與另一組件之目的,且例如,在不脫離本發明之範疇之情況下,一第一組件可被稱為第二元件,且同樣地,第二組件亦可被稱為第一組件。The terms first, second, and the like can be used to describe various components, but these components should not be limited by these terms. These terms can only be used for the purpose of distinguishing one component from another component, and for example, without departing from the scope of the present invention, a first component can be referred to as a second component, and similarly, the second component is also Can be referred to as the first component.
當一組件被稱為「連接」或「耦接」至另一組件時,其可直接連接或耦接至另一組件,但應理解,在該組件與另一組件之間可存在又一組件。相比之下,當一組件被稱為「直接連接」或「直接耦接」至另一組件時,應理解,在該組件與另一組件之間可不存在另一組件。亦應如上文所描述般解釋描述組件之間的關係之其他表達,即,「在...之間」及「直接在...之間」或「相鄰於」及「直接相鄰於」。When a component is referred to as being “connected” or “coupled” to another component, it can be directly connected or coupled to another component, but it should be understood that there may be another component between the component and another component . In contrast, when a component is referred to as being “directly connected” or “directly coupled” to another component, it should be understood that there may not be another component between the component and the other component. Other expressions describing the relationship between components should also be explained as described above, that is, "between" and "directly between" or "adjacent to" and "directly adjacent to ".
本文中所使用之術語僅用於描述特定實施例之目的且並不意欲限制本發明。除非上下文另有明確指示,否則單數形式包含複數形式。在本說明書中,術語「包括」、「包含」、「具有」及類似者用來指定存在本文中所描述之一特徵、一數目、一步驟、一操作、一組件、一元件或其等之一組合,且應理解,此等並不排除預先存在或添加一或多個其他特徵、數目、步驟、操作、組件、元件或其等之一組合之可能性。The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the present invention. Unless the context clearly indicates otherwise, the singular form includes the plural form. In this specification, the terms "include", "include", "have" and the like are used to designate the existence of a feature, a number, a step, an operation, a component, an element or the like described herein. A combination, and it should be understood that these do not exclude the possibility of pre-existing or adding one or more other features, numbers, steps, operations, components, elements, or a combination thereof.
除非另有定義,否則本文中所使用之所有術語(包含技術或科技術語)具有相同於熟習本發明所屬領域之技術者所通常理解之含義。一字典中所定義之通用術語應被解釋為具有在相關技術之內容背景中一致之含義,且除非在本發明中有明確定義,否則將不被解釋為具有一理想或過分形式化含義。Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meanings commonly understood by those skilled in the art to which the present invention belongs. A general term defined in a dictionary should be interpreted as having a consistent meaning in the context of the related technology, and unless clearly defined in the present invention, it shall not be interpreted as having an ideal or excessive formal meaning.
在下文中,將參考隨附圖式詳細描述本發明之例示性實施例。Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖3係繪示本發明之一項實施例之一基板乾燥腔之一圖,圖4係繪示根據本發明之一項實施例之形成於一下殼體中之一異物排放部件之一例示性形狀之一圖,圖5係繪示根據本發明之一項實施例之形成於下殼體中之異物排放部件之另一例示性形狀之一圖,圖6係繪示根據本發明之一項實施例之一初始增壓用超臨界流體之一擴散路徑之一圖,圖7係繪示根據本發明之一項實施例之一乾燥用超臨界流體之一擴散路徑之一圖,圖8係繪示根據本發明之一項實施例之其中一有機溶劑溶解於乾燥用超臨界流體中之一混合流體之一排放路徑之一圖,且圖9係用於描述防止在一乾燥程序結束時顆粒被引入至一基板上之原理之一圖,其中顆粒存在於提供於一上殼體與下殼體之一耦接表面上之一密封部件上且存在於密封部件周圍。FIG. 3 is a diagram of a substrate drying chamber according to an embodiment of the present invention, and FIG. 4 is an exemplary illustration of a foreign matter discharge member formed in a lower housing according to an embodiment of the present invention Figure 5 is a diagram showing another exemplary shape of a foreign matter discharging member formed in the lower casing according to an embodiment of the present invention, and Figure 6 is a diagram showing another exemplary shape according to the present invention. A diagram of a diffusion path of a supercritical fluid for initial pressurization of one embodiment, FIG. 7 is a diagram of a diffusion path of a supercritical fluid for drying according to an embodiment of the present invention, and FIG. 8 is A diagram showing a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid for drying according to an embodiment of the present invention, and FIG. 9 is used to describe preventing particles at the end of a drying process A schematic diagram of the principle introduced on a substrate, in which particles are present on a sealing member provided on a coupling surface of an upper casing and a lower casing and are present around the sealing member.
參考圖3至圖9,根據本發明之一項實施例之一基板乾燥腔1包含一上殼體10、一下殼體20、一密封部件30、一基板放置板40、一整合式供應/排放埠50、一上供應埠60、一基板放置板支撐件70、一基板支撐件80、一殼體驅動器90及一異物排放部件100。3-9, a
上殼體10及下殼體20彼此可拆卸地耦接,且提供在其中執行一乾燥程序之一空間。例如,上殼體10及下殼體20可各自經構造具有一圓柱形形狀,但本發明不限於此。如下文描述,上供應埠60形成於上殼體10中,且整合式供應/排放埠50及異物排放部件100形成於下殼體20中。The
密封部件30提供於下殼體20與上殼體10之一耦接表面上,且維持下殼體20與上殼體10之耦接表面之氣密性以阻隔基板乾燥腔1之一內部區與其外部。例如,密封部件30可包含聚合物材料,但本發明不限於此。The sealing
異物排放部件100形成於下殼體20中,且當乾燥程序完成時,異物排放部件100提供在乾燥程序期間浸漬於密封部件30中或存在於密封部件30周圍之異物透過其引入及排放至外部之一路徑。The foreign
如下描述異物在乾燥程序期間浸漬於密封部件30中或存在經密封部件30周圍之原因及異物透過異物排放部件100排放之原理。The reason why the foreign matter is immersed in the sealing
首先,將如下描述根據本發明之一項實施例之基板乾燥腔之一乾燥處理程序。First, a drying process of one of the substrate drying chambers according to an embodiment of the present invention will be described as follows.
首先,在一設定初始增壓時間期間透過構成整合式供應/排放埠50之第一管線510及共同埠520供應一初始增壓用超臨界流體,且在經過一初始增壓時間之後,阻擋初始增壓用超臨界流體之供應且可在一乾燥時間期間透過上供應埠60供應乾燥用超臨界流體,且接著,在經過乾燥時間之後,阻擋乾燥用超臨界流體,且在一排放時間期間透過構成整合式供應/排放埠50之共同埠520及第二管線530排放混合流體。在此情況中,例如,乾燥用超臨界流體之供應及混合流體之排放可重複達預定次數,即,可被清洗。在上述清洗程序中,基板乾燥腔1中之超臨界流體及更明確言之超臨界流體及溶解於超臨界流體中之有機溶劑浸漬於構成密封部件30之聚合物鏈之間的一空間中。First, during a set initial pressurization time, an initial pressurization supercritical fluid is supplied through the
同時,當乾燥程序結束時,由於在最終排放超臨界流體之同時,基板乾燥腔1之一內部壓力降低至一臨界點以下,因此浸漬於密封部件30中之超臨界流體及溶解於超臨界流體中之有機溶劑中發生相變使得超臨界流體汽化,有機溶劑以顆粒之形式自密封部件30排放,且當不對顆粒進行處理時,存在可能歸因於顆粒被引入至一基板W上而出現一程序缺陷之一問題。At the same time, when the drying process ends, since the internal pressure of one of the
本發明之一項實施例係為了防止上述問題。參考圖9用於描述防止顆粒被引入至基板W上之原理,其中顆粒存在於提供於上殼體10與下殼體20之耦接表面上之密封部件30上且存在於密封部件30周圍,當乾燥程序結束時,使用形成於下殼體20中之異物排放部件100提供浸漬於密封部件30中或存在於密封部件30周圍之異物(諸如顆粒)透過其引入及排放至外部之一路徑,使得可防止基板W之污染。An embodiment of the present invention is to prevent the above-mentioned problems. 9 is used to describe the principle of preventing particles from being introduced onto the substrate W, where the particles are present on the sealing
例如,形成於下殼體20中之異物排放部件100可包含一異物流入路徑110及一異物排放路徑120。For example, the foreign
異物流入路徑110沿著下殼體20之一邊緣垂直地形成以定位於密封部件30之一下部部分處,且提供浸漬於密封部件30中且存在於密封部件30周圍之異物透過其引入之一路徑。The foreign
異物排放路徑120形成為自異物流入路徑110之一下部遠端延伸至下殼體20之一側表面,且提供異物透過其排放之一路徑。例如,用於將異物排放至外部之一管線可連接至異物排放路徑120之一遠端,且可提供用於控制管線之敞開及閉合之一閥。The foreign
例如,如圖4中所展示,異物流入路徑110可經形成具有對應於下殼體20之邊緣之一形狀之一凹槽形狀。此外,一或多個異物排放路徑120及121可經提供以形成為自異物流入路徑110之下部遠端延伸至下殼體20之側表面。在圖4中,繪示兩個異物排放路徑120及121,但此僅為一個實例。For example, as shown in FIG. 4, the foreign
例如,密封部件30及構成異物排放部件100之異物流入路徑110以一燕尾形方式耦接,且因此,當基板乾燥腔1歸因於上殼體10與下殼體20之分離而敞開時,異物流入路徑110可經構形以防止密封部件30之釋放。For example, the sealing
替代地,如圖5中所展示,垂直形成之複數個通氣孔130可形成於構成圖4中所展示之異物流入路徑110之一凹槽之一底表面上,且異物排放路徑120及121可經構形以與複數個通氣孔130連通。此處,術語「連通」意謂著複數個通氣孔130及異物排放路徑120及121彼此連接及且通向彼此。Alternatively, as shown in FIG. 5, a plurality of vent holes 130 formed vertically may be formed on a bottom surface of a groove constituting the foreign
同時,例如,當乾燥程序結束且下殼體20及上殼體10彼此拆卸時,基板W可安置於一高度高於下殼體20與上殼體10之耦接表面之基板放置板40上,且當乾燥程序結束且下殼體20及上殼體10彼此拆卸時,可形成基板乾燥腔1以防止顆粒歸因於重力而歸因於基板W與耦接表面之間的一高度差被引入至基板W上,其中顆粒存在於提供於耦接表面上之密封部件30周圍。At the same time, for example, when the drying process ends and the
基板放置板40耦接至下殼體20之一底表面22,且其係其上安置基板W之一組件,在基板W上潤濕且形成一有機溶劑。The
例如,透過構成整合式供應/排放埠50之一第一管線510及一共同埠520供應之一初始增壓用超臨界流體可被基板放置板40阻擋以防止直接噴灑至基板W上。For example, a
更明確言之,如繪示初始增壓用超臨界流體之一擴散路徑之圖6及繪示其中有機溶劑溶解於乾燥用超臨界流體中之一混合流體之一排放路徑之圖8中所展示,可減少一乾燥程序時間使得可藉由以下來防止形成於基板W上之一圖案之塌縮:使用配置基板W必不可少且係乾燥程序之一目標之基板放置板40來阻擋在乾燥程序結束之後敞開基板乾燥腔1時再次引入之顆粒,及在乾燥程序之一初始階段阻擋初始增壓用超臨界流體直接流向基板W之一表面,且可防止初始增壓用超臨界流體中可能含有之顆粒累積於基板W上之一問題,或可減少顆粒之沈積量,且可因歸因於基板放置板40所佔據之一體積減小基板乾燥腔1之一工作體積而減少乾燥程序時間。More specifically, as shown in Fig. 6 showing a diffusion path of the supercritical fluid for initial pressurization and Fig. 8 showing a discharge path of a mixed fluid in which the organic solvent is dissolved in the supercritical fluid for drying , A drying process time can be reduced so that the collapse of a pattern formed on the substrate W can be prevented by the following: the use of the
整合式供應/排放埠50形成為自下殼體20之一個側表面24延伸至另一側表面26,且形成為從一個側表面24及另一側表面26之一中間區28朝向基板放置板40。整合式供應/排放埠50係用於提供初始增壓用超臨界流體之一供應路徑及在基板之乾燥之後形成於基板W上之有機溶劑溶解於其中之超臨界流體之一排放路徑之一組件。The integrated supply/
透過一個整合式供應/排放埠50提供初始增壓用超臨界流體之供應路徑及在基板之乾燥之後形成於基板W上之有機溶劑溶解於其中之超臨界流體之排放路徑,使得存在藉由引發所供應及排放之超臨界流體之一對稱流動以將超臨界流體均勻地分配且供應至基板乾燥腔1中及自基板乾燥腔1排放超臨界流體而提高基板乾燥效率之一效應。An integrated supply/
例如,整合式供應/排放埠50包含:第一管線510,其形成為自下殼體20之一個側表面24至其中間區28;共同埠520,其形成為在中間區28中與第一管線510連通,且面向基板放置板40;及一第二管線530,其經構形以在中間區28中與共同埠520及第一管線510連通,且形成為延伸至下殼體20之另一側表面26。第一管線510及共同埠520可經構形以提供初始增壓用超臨界流體之供應路徑,且共同埠520及第二管線530可經構形以提供有機溶劑溶解於其中之超臨界流體之排放路徑。For example, the integrated supply/
上供應埠60係形成於上殼體10之一中央區中以指向基板放置板40以提供乾燥用超臨界流體之供應路徑之一組件。The
基板放置板支撐件70係其一個端耦接至下殼體20之底表面22且另一端耦接至基板放置板40之一組件,且其在支撐基板放置板40之同時將基板放置板40與下殼體20之底表面22分離。The substrate
例如,歸因於基板放置板支撐件70而存在於下殼體20之底表面22與基板放置板40之間的一第一分離空間R1可執行藉由容許透過整合式供應/排放埠50供應之初始增壓用超臨界流體沿著基板放置板40之一底表面移動,而引發初始增壓用超臨界流體逐漸擴散至其中安置基板W之一處理區域中之一功能。For example, a first separation space R1 existing between the
基板支撐件80係其一個端耦接至基板放置板40之一頂表面且另一端耦接至基板W之一組件,且其在支撐基板W之同時將基板W與基板放置板40之頂表面分離。The
例如,歸因於基板支撐件80而存在於基板放置板40之頂表面與基板W之間的一第二分離空間R2執行藉由使基板W之一底表面暴露於透過整合式供應/排放埠50供應之初始增壓用超臨界流體及透過上供應埠60供應之乾燥用超臨界流體,而減少一乾燥程序時間之一功能。For example, a second separation space R2 existing between the top surface of the
殼體驅動器90係用於敞開或閉合腔之一部件。在乾燥程序結束之後,驅動下殼體20與上殼體10分離以敞開腔,或當起始乾燥程序時,殼體驅動器90可執行驅動下殼體20且將下殼體20耦接至上殼體10以閉合腔之一功能。儘管在圖式中已將殼體驅動器90繪示為驅動下殼體20,但此僅為一個實例,且殼體驅動器90可經構形以驅動上殼體10。The
例如,初始增壓用超臨界流體及乾燥用超臨界流體可包含二氧化碳(CO2 ),且有機溶劑可包含醇,但本發明不限於此。作為一特定實例,醇可包含甲醇、乙醇、1-丙醇、2-丙醇(異丙醇(IPA))及1-丁醇,但本發明不限於此。For example, the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ), and the organic solvent may include alcohol, but the present invention is not limited thereto. As a specific example, the alcohol may include methanol, ethanol, 1-propanol, 2-propanol (isopropanol (IPA)), and 1-butanol, but the present invention is not limited thereto.
例如,根據在根據本發明之一項實施例之基板乾燥腔中執行之超臨界乾燥技術,將處於一超臨界狀態之CO2 供應至基板W,基板W之一表面在腔中被諸如醇或類似者之有機溶劑潤濕,使得基板W上之醇溶解於一超臨界CO2 流體中。接著,自腔逐漸排放醇溶解於其中之超臨界CO2 流體,使得可乾燥基板W而未使一圖案塌縮。For example, according to a supercritical drying technique performed in a substrate drying chamber according to an embodiment of the present invention, CO 2 in a supercritical state is supplied to the substrate W, and one surface of the substrate W is in the cavity such as alcohol or The similar organic solvent wets, so that the alcohol on the substrate W is dissolved in a supercritical CO 2 fluid. Then, the supercritical CO 2 fluid in which the alcohol is dissolved is gradually discharged from the cavity, so that the substrate W can be dried without collapsing a pattern.
1:基板乾燥腔 10:上殼體 20:下殼體 22:底表面 24:一個側表面 26:另一側表面 28:中間區 30:密封部件 40:基板放置板 50:整合式供應/排放埠 60:上供應埠 70:基板放置板支撐件 80:基板支撐件 90:殼體驅動器 100:異物排放部件 110:異物流入路徑 120:異物排放路徑 121:異物排放路徑 130:通氣孔 410:高壓腔 420:下主體 422:下供應埠 426:排放埠 430:上主體 510:第一管線 520:共同埠 530:第二管線 R1:第一分離空間 R2:第二分離空間 W:基板1: Substrate drying chamber 10: Upper shell 20: Lower shell 22: bottom surface 24: One side surface 26: The other side surface 28: Middle area 30: Sealing parts 40: substrate placement board 50: Integrated supply/drain port 60: Upper supply port 70: substrate placement board support 80: substrate support 90: housing drive 100: Foreign body emission parts 110: Foreign logistics inbound path 120: foreign matter discharge path 121: Foreign matter discharge path 130: Vent 410: high pressure chamber 420: lower main body 422: Down Supply Port 426: Drain Port 430: upper body 510: The first pipeline 520: Common Port 530: second pipeline R1: The first separation space R2: Second separation space W: substrate
圖1係繪示根據相關技術之在一基板乾燥程序期間發生之一圖案塌縮現象之一圖。FIG. 1 is a diagram showing a pattern collapse phenomenon that occurs during a substrate drying process according to the related art.
圖2係繪示一習知基板乾燥腔之一圖。FIG. 2 shows a diagram of a conventional substrate drying chamber.
圖3係繪示根據本發明之一項實施例之一基板乾燥腔之一圖。FIG. 3 is a diagram showing a substrate drying chamber according to an embodiment of the present invention.
圖4係繪示根據本發明之一項實施例之形成於一下殼體中之一異物排放部件之一例示性形狀之一圖。4 is a diagram showing an exemplary shape of a foreign matter discharging member formed in a lower casing according to an embodiment of the present invention.
圖5係繪示根據本發明之一項實施例之形成於下殼體中之異物排放部件之另一例示性形狀之一圖。FIG. 5 is a diagram showing another exemplary shape of the foreign matter discharging member formed in the lower casing according to an embodiment of the present invention.
圖6係繪示根據本發明之一項實施例之一初始增壓用超臨界流體之一擴散路徑之一圖。Fig. 6 is a diagram showing a diffusion path of a supercritical fluid for initial pressurization according to an embodiment of the present invention.
圖7係繪示根據本發明之一項實施例之一乾燥用超臨界流體之一擴散路徑之一圖。Fig. 7 is a diagram showing a diffusion path of a supercritical fluid for drying according to an embodiment of the present invention.
圖8係繪示根據本發明之一項實施例之其中一有機溶劑溶解於乾燥用超臨界流體中之一混合流體之一排放路徑之一圖。FIG. 8 is a diagram showing a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid for drying according to an embodiment of the present invention.
圖9係用於描述防止在一乾燥程序結束時顆粒被引入至一基板上之原理之一圖,其中顆粒存在於提供於一上殼體與下殼體之一耦接表面上之一密封部件上且存在於密封部件周圍。Figure 9 is a diagram for describing the principle of preventing particles from being introduced onto a substrate at the end of a drying process, in which particles are present in a sealing member provided on a coupling surface of an upper housing and a lower housing And exist around the sealing part.
1:基板乾燥腔 1: Substrate drying chamber
10:上殼體 10: Upper shell
20:下殼體 20: Lower shell
22:底表面 22: bottom surface
24:一個側表面 24: One side surface
26:另一側表面 26: The other side surface
30:密封部件 30: Sealing parts
40:基板放置板 40: substrate placement board
50:整合式供應/排放埠 50: Integrated supply/drain port
60:上供應埠 60: Upper supply port
70:基板放置板支撐件 70: substrate placement board support
80:基板支撐件 80: substrate support
90:殼體驅動器 90: housing drive
100:異物排放部件 100: Foreign body emission parts
110:異物流入路徑 110: Foreign logistics inbound path
120:異物排放路徑 120: foreign matter discharge path
121:異物排放路徑 121: Foreign matter discharge path
510:第一管線 510: The first pipeline
520:共同埠 520: Common Port
530:第二管線 530: second pipeline
R1:第一分離空間 R1: The first separation space
R2:第二分離空間 R2: Second separation space
W:基板 W: substrate
Claims (14)
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| KR1020190022391A KR102178594B1 (en) | 2019-02-26 | 2019-02-26 | Substrate drying chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001028368A (en) * | 1999-05-12 | 2001-01-30 | Kobe Steel Ltd | Method and apparatus for forming film |
| CN105575855A (en) * | 2014-11-03 | 2016-05-11 | 细美事有限公司 | Substrate treating apparatus |
| CN208422868U (en) * | 2017-05-16 | 2019-01-22 | 凯斯科技股份有限公司 | chamber for processing substrates |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4985973B2 (en) * | 2007-12-11 | 2012-07-25 | Nok株式会社 | Sealing structure |
| KR101096122B1 (en) * | 2009-11-25 | 2011-12-20 | 세메스 주식회사 | Substrate drying apparatus and its substrate drying method |
| KR102037844B1 (en) * | 2013-03-12 | 2019-11-27 | 삼성전자주식회사 | Apparatus for treating substrate using supercritical fluid, substrate treatment system comprising the same, and method for treating substrate |
| KR101856611B1 (en) * | 2016-03-14 | 2018-05-14 | 세메스 주식회사 | Apparatus and method for treating substrate |
| KR101856606B1 (en) | 2016-06-02 | 2018-05-15 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| KR101935951B1 (en) * | 2016-11-25 | 2019-01-08 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| KR102417011B1 (en) * | 2017-05-16 | 2022-07-07 | 주식회사 케이씨텍 | Substrate processing chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001028368A (en) * | 1999-05-12 | 2001-01-30 | Kobe Steel Ltd | Method and apparatus for forming film |
| CN105575855A (en) * | 2014-11-03 | 2016-05-11 | 细美事有限公司 | Substrate treating apparatus |
| CN208422868U (en) * | 2017-05-16 | 2019-01-22 | 凯斯科技股份有限公司 | chamber for processing substrates |
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