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TWM462948U - Package structure - Google Patents

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Publication number
TWM462948U
TWM462948U TW101224412U TW101224412U TWM462948U TW M462948 U TWM462948 U TW M462948U TW 101224412 U TW101224412 U TW 101224412U TW 101224412 U TW101224412 U TW 101224412U TW M462948 U TWM462948 U TW M462948U
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TW
Taiwan
Prior art keywords
package structure
substrate
metal
package
encapsulant
Prior art date
Application number
TW101224412U
Other languages
Chinese (zh)
Inventor
胡迪群
詹英志
Original Assignee
欣興電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 欣興電子股份有限公司 filed Critical 欣興電子股份有限公司
Priority to TW101224412U priority Critical patent/TWM462948U/en
Publication of TWM462948U publication Critical patent/TWM462948U/en

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Classifications

    • H10W72/884
    • H10W74/15
    • H10W90/724
    • H10W90/732
    • H10W90/734

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  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

Disclosed is a package structure, comprising a substrate having a conductive pillar, an electronic component disposed on the substrate positing the conductive pillar at the peripheral thereof, and a metallic wall disposed on the substrate at the peripheral of the conductive pillar to control the range of forming an encasulant in the subsequent packaging process.

Description

封裝結構Package structure

  本創作係關於一種封裝結構,詳而言之,係關於一種具有金屬擋壁之封裝結構。This creation relates to a package structure, in particular, to a package structure having a metal barrier.

  隨著近年來可攜式電子產品的蓬勃發展,各類相關產品逐漸朝向高密度、高性能以及輕、薄、短、小之趨勢而走,各式樣封裝層疊(package on package,PoP)也因而配合推陳出新,以期能符合輕薄短小與高密度的要求。With the rapid development of portable electronic products in recent years, various related products are gradually moving toward high density, high performance, light, thin, short, and small, and various package on package (PoP) Cooperate with innovation, in order to meet the requirements of light, short and high density.

  如第1圖所示,係為習知封裝堆疊裝置1的剖視示意圖。如第1圖所示,該封裝堆疊裝置1包括兩相疊之封裝結構1a與另一封裝結構1b。As shown in FIG. 1, it is a schematic cross-sectional view of a conventional package stacking device 1. As shown in FIG. 1, the package stacking device 1 includes two stacked package structures 1a and another package structure 1b.

  其中一封裝結構1a係包含具有相對之第一及第二表面11a,11b之第一基板11、覆晶結合該第一基板11之第一電子元件10、設於該第一表面11a上之電性接觸墊111、形成於該第一基板11上以包覆該第一電子元件10之第一封裝膠體13、形成於該第一封裝膠體13之開孔130中之電性接觸墊111上之焊錫材料114及設於該第二表面11b上用於結合焊球14之植球墊112。The package structure 1a includes a first substrate 11 having opposite first and second surfaces 11a, 11b, a first electronic component 10 that is flip-chip bonded to the first substrate 11, and a power provided on the first surface 11a. The first contact substrate 111 is formed on the first substrate 11 to cover the first encapsulant 13 of the first electronic component 10, and is formed on the electrical contact pad 111 in the opening 130 of the first encapsulant 13. The solder material 114 and the ball pad 112 disposed on the second surface 11b for bonding the solder balls 14 .

  另一封裝結構1b係包含第二基板12、以打線方式結合於該第二基板12上之第二電子元件15a,15b、及形成於該第二基板12上以包覆該第二電子元件15a,15b之第二封裝膠體16,令該第二基板12藉由焊錫材料114疊設且電性連接於該第一基板11之電性接觸墊111上。The other package structure 1b includes a second substrate 12, second electronic components 15a, 15b bonded to the second substrate 12 in a wire bonding manner, and formed on the second substrate 12 to cover the second electronic component 15a. The second encapsulant 16 of the 15b is stacked on the second substrate 12 by the solder material 114 and electrically connected to the electrical contact pad 111 of the first substrate 11.

  惟,於第1圖所示之習知封裝堆疊裝置中,係以雷射技術於該第一封裝膠體13中形成外露電性接觸墊111之開孔130,相較於一般形成於該第一基板11中之線路增層結構(build-up structure,圖略)之介電層中的盲孔(via),該開孔130之深度較深,致使雷射時間增加,因而提高成本。However, in the conventional package stacking device shown in FIG. 1, the opening 130 of the exposed electrical contact pad 111 is formed in the first encapsulant 13 by laser technology, which is formed in the first A via in the dielectric layer of the build-up structure (not shown) in the substrate 11, the depth of the opening 130 is deep, resulting in an increase in laser time, thereby increasing the cost.

  此外,受限於半導體晶片(即第一電子元件10)的厚度,堆疊兩封裝結構1a,1b時需維持兩者之間的高度,且隨著該封裝堆疊裝置1的體積縮小,該些開孔130的寬度亦需縮小,又由於投射至該封裝結構1a上的雷射通常為上寬下窄的光束,難以控制雷射光束的形狀,故該些開孔130的高縱橫比(即孔之深度與寬度的比例)會造成雷射加工不易及成本增加。In addition, limited by the thickness of the semiconductor wafer (ie, the first electronic component 10), the height between the two package structures 1a, 1b is maintained, and as the package stacking device 1 is reduced in size, the openings are opened. The width of the hole 130 also needs to be reduced, and since the laser projected onto the package structure 1a is generally a beam having an upper width and a lower width, it is difficult to control the shape of the laser beam, so the high aspect ratio (ie, the hole) of the openings 130 The ratio of depth to width) makes laser processing difficult and costly.

  再者,以往的印刷錫料設備對於此種高縱橫比的孔型容易於該開孔130中產生空隙,而現行下錫設備通常一次僅能產出一顆錫球,這樣的下錫量並不足以充填該開孔130,導致形成焊錫材料114於該開孔130之時間增加。Moreover, the conventional printing tin equipment is easy to generate a gap in the opening 130 for such a high aspect ratio hole type, and the current tin-pressing equipment usually only produces one solder ball at a time, and the amount of the tin is Not enough to fill the opening 130, resulting in an increase in the time during which the solder material 114 is formed in the opening 130.

  另外,習知封裝堆疊裝置1中,該兩封裝結構1a,1b之間會形成間隙d,而使該兩封裝結構1a,1b有脫落之虞慮。In addition, in the conventional package stacking device 1, a gap d is formed between the two package structures 1a, 1b, so that the two package structures 1a, 1b have a concern of falling off.

  又,因該焊錫材料114於回焊後之體積及高度之公差大,不僅接點容易產生缺陷,導致電性連接品質不良,而且該焊錫材料114所排列成之柵狀陣列(grid array)容易產生共面性(coplanarity)不良,導致接點應力(stress)不平衡而容易造成該兩封裝結構1a,1b之間呈傾斜接置,甚至產生接點偏移之問題。Moreover, since the tolerance of the volume and height of the solder material 114 after reflow is large, not only the contacts are prone to defects, but the electrical connection quality is poor, and the solder material 114 is arranged in a grid array. The coplanarity is poor, resulting in an unbalanced bond stress, which tends to cause tilting between the two package structures 1a, 1b, and even a problem of contact offset.

  因此,如何克服習知技術中之種種問題,實已成目前亟欲解決的課題。Therefore, how to overcome various problems in the prior art has become a problem that is currently being solved.

  鑑於上述習知技術之缺失,本創作提供一種封裝結構,係包括:基板,其表面上具有複數導接金屬柱;電子元件,係設於該基板表面上並電性連接該基板,且令該些導接金屬柱位於該電子元件之外圍;以及金屬擋壁,係設於該基板之邊緣上並圍繞於該些導接金屬柱之外圍。In view of the above-mentioned deficiencies of the prior art, the present invention provides a package structure comprising: a substrate having a plurality of conductive metal posts on a surface thereof; an electronic component disposed on the surface of the substrate and electrically connected to the substrate, and The conductive metal pillars are located at the periphery of the electronic component; and the metal barrier wall is disposed on the edge of the substrate and surrounds the periphery of the conductive metal pillars.

  前述之封裝結構中,該金屬擋壁的高度係大於該導接金屬柱的高度,且該金屬擋壁係呈環形或L形。In the above package structure, the height of the metal barrier is greater than the height of the conductive metal post, and the metal barrier is annular or L-shaped.

  前述之封裝結構中,復包括設於該基板上之輔助金屬柱,其高度係大於該導接金屬柱的高度。又包括設於該導接金屬柱上之焊錫材料。In the foregoing package structure, the auxiliary metal pillars disposed on the substrate have a height greater than a height of the conductive metal pillars. Also included is a solder material disposed on the conductive metal post.

  前述之封裝結構中,復包括另一封裝結構,係結合於該些導接金屬柱上,使該另一封裝結構堆疊於該基板與該電子元件之上方。又該金屬擋壁抵靠該另一封裝結構。另包括封裝膠體,係形成於該另一封裝結構與該基板之間,且該封裝膠體黏接該另一封裝結構與該基板,該封裝膠體並包覆該些導接金屬柱與該電子元件。In the foregoing package structure, another package structure is included on the lead metal posts, and the other package structure is stacked on the substrate and the electronic component. The metal barrier also abuts the other package structure. The encapsulant is formed between the other package structure and the substrate, and the encapsulant is adhered to the other package structure and the substrate, and the encapsulant encapsulates the lead metal posts and the electronic component .

  由上可知,本創作之封裝結構中,係藉由該金屬擋壁之設計,可控制該封裝膠體之成形範圍,且能提升該封裝膠體之流動性與填膠性,以避免該封裝膠體溢流而破壞該封裝結構,故能提升產品之品質。It can be seen from the above that in the package structure of the present invention, the design of the metal barrier wall can control the forming range of the encapsulant, and the fluidity and the glue filling property of the encapsulant can be improved to avoid the encapsulation colloid overflow. The flow destroys the package structure, so the quality of the product can be improved.

  再者,藉由該導接金屬柱(非焊錫材)堆疊且電性連接該封裝結構,故於進行堆疊製程後,藉由該導接金屬柱之尺寸變異易於控制,使其可克服雷射及下錫加工不易、堆疊結構間傾斜接置及接點偏移之問題。Furthermore, the conductive metal pillars (non-solder materials) are stacked and electrically connected to the package structure, so that the size variation of the conductive metal pillars can be easily controlled after the stacking process, so that the laser can be overcome. It is not easy to process the tin, the tilting between the stacked structures and the offset of the contacts.

  又,本發明於堆疊另一封裝結構之後,再形成封裝膠體,使該封裝膠體黏接該另一封裝結構與該基板,故可避免產生習知技術中之兩封裝結構間的間隙,因而可避免封裝結構間有脫落之虞慮並具有較佳的抗翹曲表現。In addition, after stacking another package structure, the present invention further forms an encapsulant, so that the encapsulant is adhered to the other package structure and the substrate, thereby avoiding the gap between the two package structures in the prior art. Avoid the risk of falling off between the package structures and have better resistance to warping.

  以下藉由特定的具體實施例說明本創作之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本創作之其他優點及功效。
  
  須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本創作可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本創作所能產生之功效及所能達成之目的下,均應仍落在本創作所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“下”、“左”、“右”、“第一”、“第二”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本創作可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本創作可實施之範疇。
The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure of the present disclosure.

It is to be understood that the structure, the proportions, the size and the like of the drawings are only used in conjunction with the disclosure of the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effectiveness and the purpose of the creation. The technical content revealed by the creation can be covered. At the same time, the terms "upper", "lower", "left", "right", "first", "second" and "one" as used in this specification are also for convenience of description. It is not intended to limit the scope of the creation of the creation, and the change or adjustment of the relative relationship is considered to be within the scope of the creation of the creation without substantial changes in the technical content.


  第2A至2E圖係為本創作之封裝結構2a之第一實施例之製法及其封裝堆疊裝置2的剖視示意圖。
  如第2A圖所示,提供一具有相對之第一表面21a及第二表面21b之第一基板21,該第一基板21之第一表面21a上具有複數焊墊211a及位於該些焊墊211a外圍之電性接觸墊211b,且該第一基板21之第二表面21b上具有複數植球墊212。又該第一基板21之第一及第二表面21a,21b上具有例如防焊層之絕緣保護層213,且該絕緣保護層213形成有複數外露該些焊墊211a、電性接觸墊211b及植球墊212之開孔213a,並於該電性接觸墊211b之外露表面上形成如銅柱之導接金屬柱210,而於該焊墊211a之外露表面上形成導電凸塊200a。

2A to 2E are schematic cross-sectional views showing the manufacturing method of the first embodiment of the package structure 2a and the package stacking device 2 thereof.
As shown in FIG. 2A, a first substrate 21 having a first surface 21a and a second surface 21b is formed. The first surface 21a of the first substrate 21 has a plurality of pads 211a and the pads 211a. The peripheral electrical contact pad 211b has a plurality of ball bump pads 212 on the second surface 21b of the first substrate 21. Further, the first and second surfaces 21a, 21b of the first substrate 21 have an insulating protective layer 213 such as a solder resist layer, and the insulating protective layer 213 is formed with a plurality of exposed pads 211a and electrical contact pads 211b. The opening 213a of the ball pad 212 is formed on the exposed surface of the electrical contact pad 211b, and the conductive pillar 200a is formed on the exposed surface of the pad 211a.


  於本實施例中,於該焊墊211a之外露表面上係先形成銅凸塊200b,再於該銅凸塊200b上形成焊錫凸塊200c,以構成該導電凸塊200a。

In this embodiment, a copper bump 200b is formed on the exposed surface of the pad 211a, and a solder bump 200c is formed on the copper bump 200b to form the conductive bump 200a.


  如第2B圖所示,於該第一基板21之第一表面21a之邊緣上形成一金屬擋壁27,使該金屬擋壁27圍繞該些導接金屬柱210之外圍,如第2C’圖所示。

As shown in FIG. 2B, a metal barrier wall 27 is formed on the edge of the first surface 21a of the first substrate 21, so that the metal barrier wall 27 surrounds the periphery of the conductive metal pillars 210, as shown in FIG. 2C'. Shown.


  於本實施例中,該金屬擋壁27係為銅材並位於該第一基板21相鄰兩邊緣處(即第2C’圖所示之上側與右側,呈「L」字形),且該金屬擋壁27的高度h係高於該導接金屬柱210的高度t。

In this embodiment, the metal barrier wall 27 is made of copper and is located at the adjacent edges of the first substrate 21 (ie, the upper side and the right side of the second C' figure are in an "L" shape), and the metal The height h of the retaining wall 27 is higher than the height t of the guiding metal post 210.


  如第2C圖所示,於該焊墊211a上藉由該些導電凸塊200a設置至少一第一電子元件20,令該些導接金屬柱210位於該第一電子元件20之外圍,再以底膠201包覆該些導電凸塊200a,即該第一電子元件20之電極墊200以覆晶方式電性連接該第一基板21,並於該植球墊212之外露表面上結合焊球24,以構成本創作之封裝結構2a之第一實施例。

As shown in FIG. 2C, at least one first electronic component 20 is disposed on the solder pad 211a by the conductive bumps 200a, so that the conductive metal pillars 210 are located on the periphery of the first electronic component 20, and then The primer 201 covers the conductive bumps 200a, that is, the electrode pads 200 of the first electronic component 20 are electrically connected to the first substrate 21 in a flip chip manner, and the solder balls are combined on the exposed surface of the ball bump pad 212. 24, to constitute the first embodiment of the package structure 2a of the present invention.


  於本實施例中,該第一電子元件20係為主動元件及/或被動元件,該主動元件係例如:晶片,而該被動元件係例如:電阻、電容及電感。

In this embodiment, the first electronic component 20 is an active component and/or a passive component, such as a wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor.


  如第2D圖所示,於該些導接金屬柱210之外露表面上形成焊錫材料214,以藉由回焊該焊錫材料214而堆疊另一封裝結構2b於該導接金屬柱210上。

As shown in FIG. 2D, a solder material 214 is formed on the exposed surface of the conductive metal pillars 210 to stack another package structure 2b on the conductive metal pillars 210 by reflowing the solder material 214.


  於本實施例中,該另一封裝結構2b係於一第二基板22上設有第二電子元件25a,25b,且該第二電子元件25a,25b係以打線方式接置並電性連接該第二基板22(亦可以覆晶方式接置並電性連接該第二基板22),並以封裝膠體26包覆該第二電子元件25a,25b。

In this embodiment, the other package structure 2b is provided with a second electronic component 25a, 25b on a second substrate 22, and the second electronic component 25a, 25b is electrically connected and electrically connected to the second electronic component 25a, 25b. The second substrate 22 (which may also be flip-chip connected and electrically connected to the second substrate 22) and encapsulates the second electronic components 25a, 25b with the encapsulant 26.


  再者,該金屬擋壁27的高度h係等於該導接金屬柱210及焊錫材料214的高度總和L,使該金屬擋壁27抵靠該另一封裝結構2b。

Moreover, the height h of the metal barrier wall 27 is equal to the total height L of the conductive metal pillars 210 and the solder material 214, so that the metal barrier wall 27 abuts against the other package structure 2b.


  如第2E圖所示,藉由例如封模方式(molding),由該兩封裝結構2a,2b之側面形成封裝膠體23於該另一封裝結構2b與該第一基板21之間,以令該封裝膠體23包覆該些導接金屬柱210及焊錫材料214,且該封裝膠體23黏接該另一封裝結構2b與該第一基板21,以構成一封裝堆疊裝置2。
  於本實施例中,該金屬擋壁27係限制該封裝膠體23之成形範圍。因該金屬擋壁27位於該第一基板21相鄰兩邊緣處,故該封裝膠體23可由該第一基板21之其它側邊(如第2C’圖所示之下側與左側)填入,因而該封裝膠體23能包覆該第一電子元件20。

As shown in FIG. 2E, the encapsulant 23 is formed between the other package structure 2b and the first substrate 21 by the side of the two package structures 2a, 2b by, for example, a molding method. The encapsulant 23 covers the lead metal posts 210 and the solder material 214, and the encapsulant 23 adheres the other package structure 2b and the first substrate 21 to form a package stacking device 2.
In the present embodiment, the metal barrier wall 27 limits the forming range of the encapsulant 23 . Since the metal barrier wall 27 is located at the adjacent edges of the first substrate 21, the encapsulant 23 can be filled in by other sides of the first substrate 21 (such as the lower side and the left side shown in FIG. 2C'). Thus, the encapsulant 23 can cover the first electronic component 20.


  因此,如第2E(a)至2E(c)圖所示,該金屬擋壁27a,27b,27c若呈環形而位於該第一基板21邊緣處,該金屬擋壁27a,27b,27c需具有至少一缺口270,以將該封裝膠體23填入該另一封裝結構2b與該第一基板21之間。

Therefore, as shown in FIGS. 2E(a) to 2E(c), the metal retaining walls 27a, 27b, 27c are annularly located at the edge of the first substrate 21, and the metal retaining walls 27a, 27b, 27c are required to have At least one notch 270 is formed to fill the encapsulant 23 between the other encapsulation structure 2b and the first substrate 21.


  本創作之封裝結構2a藉由該金屬擋壁27之設計,可控制該封裝膠體23之成形範圍,且能提升該封裝膠體23之流動性與填膠性,以避免該封裝膠體23溢流而破壞該封裝結構2a,故能提升產品之品質。

The package structure 2a of the present invention can control the forming range of the encapsulant 23 by the design of the metal barrier wall 27, and can improve the fluidity and the glue filling property of the encapsulant 23 to prevent the encapsulant 23 from overflowing. The package structure 2a is destroyed, so that the quality of the product can be improved.


  其中一方面,於堆疊另一封裝結構2b之後,再形成該封裝膠體23,使該封裝膠體23黏接該另一封裝結構2b與該第一基板21,故該兩封裝結構2a,2b間不會產生間隙,因而能提升該兩封裝結構2a,2b之結合性,以避免上方封裝結構2b脫落並具有較佳的抗翹曲表現。

After the other package structure 2b is stacked, the package body 23 is formed, and the package body 23 is adhered to the other package structure 2b and the first substrate 21. Therefore, the two package structures 2a and 2b are not A gap is generated, so that the combination of the two package structures 2a, 2b can be improved to prevent the upper package structure 2b from falling off and having better warpage resistance.


  另一方面,藉由該導接金屬柱210以堆疊且電性連接該兩封裝結構2a,2b,因可控制該導接金屬柱210的高度與體積,故於回焊該焊錫材料214後,該導接金屬柱210與該焊錫材料214所構成之接點不會產生缺陷,因而維持良好之電性連接品質,而且該導接金屬柱210所排列成之柵狀陣列(grid array)之共面性(coplanarity)良好,因而接點應力(stress)保持平衡而不會造成該兩封裝結構2a,2b之間呈傾斜接置,以避免產生接點偏移之問題。

On the other hand, after the metal pillars 210 are stacked and electrically connected to the two package structures 2a, 2b, since the height and volume of the conductive metal pillars 210 can be controlled, after the solder material 214 is reflowed, The contact between the conductive metal pillars 210 and the solder material 214 does not cause defects, thereby maintaining good electrical connection quality, and the conductive metal pillars 210 are arranged in a grid array. The coplanarity is good, so the contact stress is balanced without causing the two package structures 2a, 2b to be tilted to avoid the problem of joint offset.

  第3A至3B圖係為本創作之封裝結構3a之第二實施例及其封裝堆疊裝置3的剖視示意圖。本實施例與第一實施例的差異在於新增如銅材之輔助金屬柱(dummy post)37,其它結構大致相同。
  如第3A及3A’圖所示,係該第一基板21之第一表面21a上形成有複數輔助金屬柱37。
3A to 3B are cross-sectional views showing a second embodiment of the package structure 3a of the present invention and its package stacking device 3. The difference between this embodiment and the first embodiment is that an auxiliary dummy post 37 such as a copper material is added, and other structures are substantially the same.
As shown in FIGS. 3A and 3A', a plurality of auxiliary metal pillars 37 are formed on the first surface 21a of the first substrate 21.


  於本實施例中,該些輔助金屬柱37係位於各該導接金屬柱210之間(如該導接金屬柱210之內側、外側等周圍)及該導接金屬柱210與該第一電子元件20之間,以構成本創作之封裝結構3a之第三實施例。

In the embodiment, the auxiliary metal pillars 37 are located between the guiding metal pillars 210 (such as the inner side, the outer side, and the like of the guiding metal pillars 210), and the guiding metal pillars 210 and the first electrons. Between the elements 20, a third embodiment of the package structure 3a of the present invention is constructed.


  再者,該輔助金屬柱37之高度係大於該導接金屬柱210的高度,且該輔助金屬柱37之寬度小於該導接金屬柱210的寬度,亦即相較於該導接金屬柱210,該輔助金屬柱37係為細長柱體。

Furthermore, the height of the auxiliary metal pillars 37 is greater than the height of the guiding metal pillars 210, and the width of the auxiliary metal pillars 37 is smaller than the width of the guiding metal pillars 210, that is, compared to the guiding metal pillars 210. The auxiliary metal column 37 is an elongated cylinder.

  如第3B圖所示,進行堆疊另一封裝結構2b,使該些輔助金屬柱37係抵靠該另一封裝結構2b,再於該另一封裝結構2b與該第一基板21之間形成封裝膠體23,使該封裝膠體23包覆該些輔助金屬柱37,以構成一封裝堆疊裝置5。As shown in FIG. 3B, another package structure 2b is stacked, the auxiliary metal posts 37 are abutted against the other package structure 2b, and a package is formed between the other package structure 2b and the first substrate 21. The colloid 23 is such that the encapsulant 23 covers the auxiliary metal posts 37 to form a package stacking device 5.


  本創作藉由該輔助金屬柱37之設計,不僅能提升該封裝膠體23之流動性與填膠性,且能直接抵靠該另一封裝結構2b,以提供更好之共面性(coplanarity),使上方之封裝結構2b更能保持平衡而不會呈傾斜。

The design of the auxiliary metal pillar 37 not only improves the fluidity and the glue filling property of the encapsulant 23, but also directly abuts the other package structure 2b to provide better coplanarity. The upper package structure 2b is more balanced without tilting.


  綜上所述,本創造之封裝結構,係藉由該金屬擋壁(及輔助金屬柱)之設計,可控制該封裝膠體之成形範圍,且能提升該封裝膠體之流動性與填膠性,以避免該封裝膠體溢流而破壞該封裝結構,故能提升產品之品質。

In summary, the package structure of the present invention can control the forming range of the encapsulant by the design of the metal retaining wall (and the auxiliary metal post), and can improve the fluidity and the filling property of the encapsulant. In order to avoid the overflow of the encapsulant and destroy the package structure, the quality of the product can be improved.


  再者,該輔助金屬柱因直接抵靠上方封裝結構,以提供更好之共面性,使上方之封裝結構更能保持平衡而不傾斜。

Moreover, the auxiliary metal post is directly abutted against the upper package structure to provide better coplanarity, so that the upper package structure can be more balanced without tilting.


  又,藉由該導接金屬柱之設計,故能克服雷射及下錫加工不易、堆疊結構間傾斜接置及接點偏移之問題。

Moreover, by the design of the guiding metal post, it is possible to overcome the problem that the laser and the tin-working are not easy, the tilting between the stacked structures, and the offset of the contacts.


  另外,該封裝結構藉由該封裝膠體黏接該另一封裝結構與該基板,因而有效避免封裝結構間發生脫落並具有較佳的抗翹曲表現。

In addition, the package structure adheres the other package structure and the substrate by the encapsulant, thereby effectively preventing the separation between the package structures and having better anti-warpage performance.


  上述實施例係用以例示性說明本創作之原理及其功效,而非用於限制本創作。任何熟習此項技藝之人士均可在不違背本創作之精神及範疇下,對上述實施例進行修改。因此本創作之權利保護範圍,應如後述之申請專利範圍所列。


The above embodiments are intended to illustrate the principles of the present invention and its effects, and are not intended to limit the present invention. Anyone who is familiar with the art may modify the above embodiments without departing from the spirit and scope of the creation. Therefore, the scope of protection of this creation should be as listed in the scope of patent application described later.

1,2,3‧‧‧封裝堆疊裝置1,2,3‧‧‧ package stacking device

1a,1b,2a,2b,3a‧‧‧封裝結構1a, 1b, 2a, 2b, 3a‧‧‧ package structure

10,20‧‧‧第一電子元件10,20‧‧‧First electronic components

101,201‧‧‧底膠101,201‧‧‧Bottom glue

11,21‧‧‧第一基板11, 21‧‧‧ first substrate

11a,21a‧‧‧第一表面11a, 21a‧‧‧ first surface

11b,21b‧‧‧第二表面11b, 21b‧‧‧ second surface

111,211b‧‧‧電性接觸墊111,211b‧‧‧Electrical contact pads

112,212‧‧‧植球墊112,212‧‧‧Ball mat

114,214‧‧‧焊錫材料114,214‧‧‧ solder materials

12,22‧‧‧第二基板12,22‧‧‧second substrate

120‧‧‧焊錫球120‧‧‧ solder balls

13‧‧‧第一封裝膠體13‧‧‧First encapsulant

130‧‧‧開孔130‧‧‧Opening

14,24‧‧‧焊球14,24‧‧‧ solder balls

15a,15b,25a,25b‧‧‧第二電子元件15a, 15b, 25a, 25b‧‧‧ second electronic components

16‧‧‧第二封裝膠體16‧‧‧Second encapsulant

200‧‧‧電極墊200‧‧‧electrode pads

200a‧‧‧導電凸塊200a‧‧‧conductive bumps

200b‧‧‧銅凸塊200b‧‧‧ copper bumps

200c‧‧‧焊錫凸塊200c‧‧‧ solder bumps

210‧‧‧導接金屬柱210‧‧‧Guided metal column

211a‧‧‧焊墊211a‧‧‧ pads

213‧‧‧絕緣保護層213‧‧‧Insulating protective layer

213a‧‧‧開孔213a‧‧‧Opening

23,26‧‧‧封裝膠體23,26‧‧‧Package colloid

27,27a,27b,27c‧‧‧金屬擋壁27,27a,27b,27c‧‧Metal barrier

270‧‧‧缺口270‧‧ ‧ gap

37‧‧‧輔助金屬柱37‧‧‧Auxiliary metal column

d‧‧‧間隙D‧‧‧ gap

h,t‧‧‧高度h, t‧‧‧ height

L‧‧‧高度總和L‧‧‧ height sum

  第1圖係為習知封裝堆疊裝置之剖視示意圖;Figure 1 is a schematic cross-sectional view of a conventional package stacking device;

  第2A至2E圖係為本創作之封裝結構之第一實施例之製法及其封裝堆疊裝置的剖視示意圖;其中,第2C’圖係為第2C圖(未設置該第一電子元件前)之上視示意圖,第2E(a)至2E(c)圖係為第2C’圖之其它實施態樣;以及2A to 2E are schematic cross-sectional views showing a method of fabricating a first embodiment of the package structure of the present invention and a package stacking device thereof; wherein the 2Cth image is the 2Cth image (before the first electronic component is not disposed) In the top view, the 2E(a) to 2E(c) diagrams are other embodiments of the 2C' diagram;

  第3A至3B圖係為本創作之封裝結構之第二實施例及其封裝堆疊裝置的剖視示意圖;其中,第3A’圖係為第3A圖(未設置該第一電子元件前)之上視示意圖。3A to 3B are cross-sectional views showing a second embodiment of the package structure of the present invention and a package stacking device thereof; wherein the 3A' figure is the 3A figure (before the first electronic component is not disposed) See the schematic.

2a‧‧‧封裝結構2a‧‧‧Package structure

20‧‧‧第一電子元件20‧‧‧First electronic components

200‧‧‧電極墊200‧‧‧electrode pads

200a‧‧‧導電凸塊200a‧‧‧conductive bumps

201‧‧‧底膠201‧‧‧Bottom glue

21‧‧‧第一基板21‧‧‧First substrate

21a‧‧‧第一表面21a‧‧‧ first surface

210‧‧‧導接金屬柱210‧‧‧Guided metal column

211a‧‧‧焊墊211a‧‧‧ pads

212‧‧‧植球墊212‧‧‧Ball mat

24‧‧‧焊球24‧‧‧ solder balls

27‧‧‧金屬擋壁27‧‧‧Metal barrier

Claims (8)

一種封裝結構,係包括:基板,其表面上具有複數導接金屬柱;電子元件,係設於該基板表面上並電性連接該基板,且令該些導接金屬柱位於該電子元件之外圍;以及金屬擋壁,係設於該基板之邊緣上並圍繞於該些導接金屬柱之外圍。 A package structure includes a substrate having a plurality of conductive metal pillars on a surface thereof, and an electronic component disposed on the surface of the substrate and electrically connected to the substrate, wherein the conductive metal pillars are located on the periphery of the electronic component And a metal barrier wall disposed on an edge of the substrate and surrounding the periphery of the guiding metal posts. 如申請專利範圍第1項所述之封裝結構,其中,該金屬擋壁的高度係大於該導接金屬柱的高度。 The package structure of claim 1, wherein the height of the metal barrier is greater than the height of the conductive metal post. 如申請專利範圍第1或2項所述之封裝結構,其中,該金屬擋壁係呈環形或L形。 The package structure of claim 1 or 2, wherein the metal barrier is annular or L-shaped. 如申請專利範圍第1項所述之封裝結構,復包括設於該基板上之輔助金屬柱,其高度係大於該導接金屬柱的高度。 The package structure according to claim 1, further comprising an auxiliary metal column disposed on the substrate, the height of which is greater than the height of the guiding metal column. 如申請專利範圍第1或4項所述之封裝結構,復包括設於該導接金屬柱上之焊錫材料。 The package structure according to claim 1 or 4, further comprising a solder material disposed on the conductive metal pillar. 如申請專利範圍第1項所述之封裝結構,復包括另一封裝結構,係結合於該些導接金屬柱上,使該另一封裝結構堆疊於該基板與該電子元件之上方。 The package structure of claim 1, further comprising another package structure coupled to the lead metal posts to stack the other package structure over the substrate and the electronic component. 如申請專利範圍第6項所述之封裝結構,其中,該金屬擋壁抵靠該另一封裝結構。 The package structure of claim 6, wherein the metal barrier wall abuts the other package structure. 如申請專利範圍第6項所述之封裝結構,復包括封裝膠體,係形成於該另一封裝結構與該基板之間,且該封裝膠體黏接該另一封裝結構與該基板,該封裝膠體並包覆該些導接金屬柱與該電子元件。The package structure of claim 6, further comprising an encapsulant formed between the other package structure and the substrate, and the encapsulant is adhered to the other package structure and the substrate, the encapsulant And guiding the lead metal posts and the electronic component.
TW101224412U 2012-12-17 2012-12-17 Package structure TWM462948U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569386B (en) * 2013-01-23 2017-02-01 台灣積體電路製造股份有限公司 Structure and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569386B (en) * 2013-01-23 2017-02-01 台灣積體電路製造股份有限公司 Structure and method
US10366971B2 (en) 2013-01-23 2019-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Pre-applying supporting materials between bonded package components

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