M441675 五、新型說明： 【新型所屬之技術領域】 本創作是有關一種凝固裝置，且特別是有關於一種定 向凝固裝置。 【先前技術】 由於電子時代之來臨，電子性產品大量受到重視，故 晶圓材料即成為半導體產業與光電產業大量需求之產品。 而晶圓之生長方式有很多種，例如浮融帶長晶法(Fl〇atingM441675 V. New description: [New technical field] The present invention relates to a coagulation device, and in particular to a directional solidification device. [Prior Art] Due to the advent of the electronic age, electronic products have received a lot of attention, so wafer materials have become a product of the semiconductor industry and the optoelectronic industry. There are many ways to grow wafers, such as floatation and crystal growth (Fl〇ating).
Zone Method)、雷射加熱提拉長晶法(user Heated Pedestal Growth)、及柴式長晶法(Czochralski Method)等，而更因每 種長晶方式不同而所使用之設備亦不盡相同。 類最為常見 太陽能電池屬半導體之一種，故又稱為太陽能晶片， 石夕(silicon)為目削通用的太陽能電池之原料代表，其發電原 理為利用太陽光轉換成電能。太陽能光f基板(SQlar pv Cell)的晶片材質有很多種’大致上可分為單晶石夕、多晶石夕 、非晶碎’以及其它非特料，其+以單晶料多晶石夕兩 矽熔湯，以長晶 凝固矽熔湯時， 曰曰形成秒敎，進而供切割形成晶片。但於Zone Method), the user heated Pedestal Growth, and the Czochralski Method, and the equipment used for each crystal growth method is different. The most common type of solar cell is a kind of semiconductor, so it is also called solar wafer. The silicon is the representative of the raw material of the general-purpose solar cell. The power generation principle is to convert sunlight into electric energy. There are many kinds of wafer materials for solar light f-substrate (SQlar pv Cell), which can be roughly divided into single crystal, polycrystalline, amorphous, and other non-special materials. When the two soups are melted and the crystals are solidified, the crucible is formed into a second crucible, which is then cut to form a wafer. But
然而’於㈣太陽能晶片前，須先以賴凝固其内 ^ , \：ι a Λί ^ λ* 3/15 M441675 【新型内容】 本創作實施例在於提供一種定向凝固裝置，其用以使 形成的矽鑄錠内部具有較少的缺陷。 、 本創作實施例提供-種定向凝難置，用以凝固一石夕 炫湯，該定向義裝置包括：—職，其包含—内底面及 連接於該喊_面；以及—碳化物結構其設置 於捕納底©_L ’且該環側面頂緣離朗底面的距離為 該碳化物結構頂緣離該内底面的距離之至少五倍，該碳化 物結構界定成核用以於翻該贿湯時，能抑 制位於該成核空間内的矽熔湯之晶粒生長的尺寸。 較佳地，該碳化物結構包含數個層狀地排列於該坩鍋 内底面的引晶齡’且該些5丨晶顆粒與制底面包圍界定 出該成核空間。 —較佳地，該些引晶顆粒分別為直徑相同之圓球狀，且However, before the (four) solar wafer, it must be solidified by ^, \: ι a Λ ί ^ λ* 3/15 M441675. [New content] The present embodiment provides a directional solidification device for forming There are fewer defects inside the ingot casting. The present invention provides a directional solidification device for solidifying a stone shoal soup, the directional device comprising: a job, which includes an inner bottom surface and a connection to the shouting surface; and a carbide structure. The bottom edge of the ring is at least five times the distance from the bottom surface of the top surface of the ring, and the carbide structure defines a nucleus for turning over the bribe soup. At the same time, the size of grain growth of the crucible soup located in the nucleation space can be suppressed. Preferably, the carbide structure comprises a plurality of seeding ages arranged in a layered manner on the bottom surface of the crucible and the five twin particles surround the bottom surface to define the nucleation space. Preferably, the seeding particles are respectively spherical in shape of the same diameter, and
每一引晶顆粒的直徑大致為0 5公釐至40公釐，該些引晶 顆粒彼此緊鄰地排列。 —BB 較佳地，該些引晶顆粒分別為外型相同的方柱，且每 一引晶顆粒的橫截面邊長大致為0·5公釐至40公釐，該些 引晶顆粒彼此間隔地呈矩陣式排列。 較佳地，該碳化物結構具有一基部及一突出部，該基 部呈板狀且具有相對應的一第一表面與一第二表面，該^ 出部自該基部的第一表面延伸所形成，且該基部與該突出 部包圍界定出該成核空間，該基部的第二表面設置於該坩 鋼内底面上’且該基部的第二表面形狀與該内底面形 狀大致相同。 較佳地，該突出部包含數個橫向凸條及數個縱向凸條 4/15 ’該些橫向凸條與該些縱向凸條彼此交錯排列，以使該成 核空間形成數個矩陣式排列的開孔。 較佳地’每一開孔的孔徑自鄰近該基部朝遠離該基部 的方向皆大致相同。 較佳地’該突出部包含數個凸柱，該些凸柱彼此間隔 地呈矩陣式排列，以使該成核空間形成數個彼此交錯的溝 槽。 較佳地，該碳化物結構進一步限定為一碳化矽結構。 本創作另提供一種如上所述之定向凝固裝置，其具有 一氮化物結構以替代該碳化物結構。 車又佳地，该氮化物結構進一步限定為一氮化矽結構。 本創作又提供一種如上所述之定向凝固裝置，其具有 石墨結構以替代該碳化物結構。 4上所述，本創作實施例所提供的定向凝固裝置，其 购底部的魏湯騎H粒具有較小的粒 二進而降低雜湯所凝_成㈣鑄_部缺陷。 =能更it-步瞭解本創作之㈣及技術 ==作=r與附圖，然而所附圖式= 制/、肖並非用來對本創作的_朗作任何的限 【實施方式】 〔第—實施例 睛參閱圖1至圖6，名丨_ 圖:、.及圖5為本實施例的剖視示意圖，圖2、 其為本創作的第—實 、圖4、及圖5盔士盘......... 其中， 及圖6為本實施例的俯視示意圖。 復參照圖1和圖2 % - , $回2所不，本實施例為一種 圖3 定向凝固裝 置10〇，其包括一坩鍋110以及一碳化物結構12〇。 其中，上述坩鍋110呈中空方柱狀且包含一内 =連接於上述内絲⑴的—環側面藉此透過掛 鍋110的内底面⑴與環側面112㈣形成的空間’ 一矽熔湯200(如圖7)β 所述碳化物結構12〇的較佳選擇為碳化石夕結構。再者 二就材質上來說，其亦可以為氮化物結構，且較佳選擇為 氦化矽結構；或者為石墨結構。 但於實際躺時，只要碳化物結構12〇(或氮化物結構 、石墨結構)可在高溫環境(如：石夕炫料炫融成魏湯時的溫 度)下不與⑪反應且不分解即可，並不受限於上述的碳化石夕 結構、石墨結構或氮化石夕結構。 再者所述兔化物結構12〇包含數個引晶顆粒κι，所 述引晶顆粒121係層狀地排列於坩鍋110内底面111，且該 些引晶顆粒121與内底面⑴包圍界定出—成核空間122 〇 .須說明的是，於本實施例中，該些引晶顆粒121可分 別為圓球狀，且彼此緊鄰地排列。而引晶顆粒121的排列 方式可如同圖2所示的錯位排列，或者如同圖3所示的矩 陣式排列。 其中，a亥些引晶顆粒J21的直徑實質相同，且每一引 晶顆粒121的直徑大致為〇 5公楚至4〇公爱。而上述引晶 顆粒121與坩鍋110内底面nl所界定之成核空間122，其 密度在此不加以限制，較佳為3〇%至9〇%。 再者，所述碳化物結構120(即上述引晶顆粒121)設置 於坩鍋11〇内底面lu上時，坩鍋11〇環側面112頂緣離内 6/15 M441675 ==為Sf—底面_ 叫父佳為_ m環側面》，碳化物結構⑽的高度 拯古夕，户、去讀面】】2而度D1的15%以下。 可不相上述條件的情況下’該曰顆极121 :==_若_粒12心= 的 的直魏佳為一環側面"2高㈣Each of the seed crystal particles has a diameter of approximately 0 5 mm to 40 mm, and the seed crystal particles are arranged in close proximity to each other. Preferably, the seeding particles are respectively square columns of the same shape, and each of the seeding particles has a cross-sectional side length of approximately 0.5 mm to 40 mm, and the seeding particles are spaced apart from each other. The grounds are arranged in a matrix. Preferably, the carbide structure has a base portion and a protruding portion, the base portion is plate-shaped and has a corresponding first surface and a second surface, and the protruding portion is formed to extend from the first surface of the base portion. And the base portion and the protrusion portion define the nucleation space, the second surface of the base portion is disposed on the inner bottom surface of the steel piece and the second surface shape of the base portion is substantially the same as the shape of the inner bottom surface. Preferably, the protruding portion includes a plurality of lateral ridges and a plurality of longitudinal ribs 4/15'. The lateral ridges and the longitudinal ribs are staggered with each other to form the nucleation space into a plurality of matrix arrangements. Opening. Preferably, the aperture of each aperture is substantially the same from adjacent the base toward away from the base. Preferably, the projection comprises a plurality of studs arranged in a matrix spaced apart such that the nucleation space forms a plurality of interlaced grooves. Preferably, the carbide structure is further defined as a tantalum carbide structure. The present invention further provides a directional solidification apparatus as described above having a nitride structure in place of the carbide structure. Preferably, the nitride structure is further defined as a tantalum nitride structure. The present invention further provides a directional solidification apparatus as described above having a graphite structure in place of the carbide structure. As described above, in the directional solidification apparatus provided in the present embodiment, the Wei Tang riding H grain at the bottom of the creation has a smaller particle size 2 and further reduces the defects of the compound soup. = can be more step-by-step understanding of the creation of (4) and technology == for =r and the drawing, however, the drawing = system /, Xiao is not used to limit the creation of this creation [implementation] [ - Embodiments, referring to FIG. 1 to FIG. 6, a schematic diagram of a cross-sectional view of the present embodiment, and FIG. 2 is a schematic view of the first embodiment of the present invention, FIG. 2, and FIG. Disk......... and FIG. 6 is a schematic plan view of the present embodiment. Referring to Fig. 1 and Fig. 2% -, $2, the present embodiment is a directional solidification apparatus 10, which includes a crucible 110 and a carbide structure 12A. Wherein, the crucible 110 has a hollow square column shape and includes a ring surface connected to the inner wire (1) to penetrate the inner bottom surface (1) of the hanging pot 110 and the ring side surface 112 (four). A preferred choice for the carbide structure 12A of Figure 7) is a carbonized carbide structure. Further, in terms of material, it may also be a nitride structure, and is preferably selected from a bismuth telluride structure; or a graphite structure. However, in actual lying, as long as the carbide structure 12〇 (or nitride structure, graphite structure) can not react with 11 and does not decompose in a high temperature environment (such as the temperature when Shi Xi Xuan material is melted into Wei Tang) It may not be limited to the above-described carbonized carbide structure, graphite structure or nitride structure. Furthermore, the rabbit compound structure 12A includes a plurality of seeding particles κι, and the seed crystal particles 121 are layered in the bottom surface 111 of the crucible 110, and the seed crystal particles 121 are surrounded by the inner bottom surface (1) to define The nucleation space 122 须. It should be noted that, in this embodiment, the seed crystal particles 121 may be spherical and arranged in close proximity to each other. The seed crystal particles 121 can be arranged in the same manner as the misalignment shown in Fig. 2 or in the matrix arrangement as shown in Fig. 3. Wherein, the diameters of the aforesaid seed crystal particles J21 are substantially the same, and the diameter of each of the seed crystal particles 121 is approximately 公5 public Chu to 4〇 public. The density of the nucleation space 122 defined by the above-mentioned seed crystal particles 121 and the bottom surface n1 of the crucible 110 is not limited, and is preferably from 3% to 9%. Furthermore, when the carbide structure 120 (ie, the above-mentioned seed crystal particles 121) is disposed on the bottom surface lu of the crucible 11〇, the top edge of the side surface 112 of the crucible 11 is separated from the inside by 6/15. M441675 == Sf—bottom surface _ Called the father is _ m ring side, the height of the carbide structure (10) is auspicious, the household, to read the surface]] 2 degrees below D1 of D1. In the case of the above conditions, the 曰 pole 121 :== _ if _ grain 12 heart = the straight Wei Jia is a ring side " 2 high (four)
ΐ間122。於實際應用時，較佳的排列方式為 曰曰顆粒121亦可為不規則狀，但 细地說，該些引晶顆粒121為外^實質相同的方 ^，且母-引晶_ 121的橫戴面(大致平行於内底面ιη) 邊長L大致為0.5純至4G Μ。並且，上述引晶顆粒ΐ2ι 與内底面111所界定之成核空間122，其密度較佳亦為 30%Ϊ́123. In practical applications, the preferred arrangement is that the ruthenium particles 121 may also be irregular, but in detail, the seed crystal particles 121 are substantially the same square, and the mother-crystallized _121 The lateral wear surface (substantially parallel to the inner bottom surface ιη) has a side length L of approximately 0.5 pure to 4G Μ. Moreover, the nucleation space 122 defined by the above-mentioned seeding particles ΐ2ι and the inner bottom surface 111 preferably has a density of 30%.
至 90%。 綜上所述，定向凝固裝置100的碳化物結構12〇用以 於凝固矽熔湯200時，能抑制位於成核空間122内的矽熔 湯200之晶粒生長的尺寸。藉此，使得利用本實施例定向 凝固裝置100所形成的石夕鑄鍵(圖未示），可降低其内部之缺 陷。 ' 此外’由於本實施例所述之碳化物結構120(:或氮化物 結構、石墨结構）可在南溫丨哀境下不與碎反應且不分解，因 此’碳化物結構120(或亂化物結構、石墨結構)適於重複使 用。 7/15 粒πΠ。兄明一點’如圖7A戶斤示’其為本實施例於引晶顆 直徑為1mm時所形成的矽鑄錠213相較於習知未使 日結構時所形成之石夕鑄旋的兩者缺陷面積密度比較示 思圖。 ’ Α1 «I本實施例的矽鑄錠213經切割後位於中 、區域的日日碗，A2代表本實施例的碎铸鍵2丨3經切割後位 =側邊與角落區域的㈣。而B1代表習知的石夕鑄旋經切割 後位於中央區域的晶石定，B2代表習知的石夕鑄旋經切割後位 於侧邊與角落區域的晶碇。 由圖7A即可清楚得知，本實施例所形成的矽鑄錠213 相車乂於習知而言，其缺陷面積密度顯然得到大幅地改善， 具有習知技術無法預期之效果。 此外，本實施例的矽鑄錠213經切割後的晶碇，於其 底部的晶粒經測試後得知直徑約為〇.7cm。然而，習知的石夕 鑄錠經切割後的晶碇之底部晶粒直徑約為13至L8crn。也 就是說，本實施例所述定向凝固裝置1〇〇的碳化物結構12〇 用以於凝固矽熔湯200時，確實能抑制位於成核空間122 内的石夕炼湯200之晶粒生長的尺寸。 〔第二實施例〕 請參閱圖8至圖14，其為本創作的第二實施例，其中 ’圖8、11、13為本實施例的剖視示意圖，圖9、1〇、12 、14為本實施例的俯視示意圖。 本實施例與第一實施例類似’而兩者不同之處主要在 於碳化物結構120，故坩鍋110的構造不再復述，而碳化物 結構120的具體差異如下所述。 復參照圖8和圖9，所述碳化物結構120具有—基部 8/15 M441675 123及一突出部124。其中，上述基部i23呈板狀且具有相 對的一第一表面1231與一第二表面1232。上述突出部ι24 自基。卩123的第一表面1231延伸所形成，而基部丨23與突 ‘ 出邛I24包圍界定出一成核空間丨22。 : 更詳細地說，所述基部123的第二表面1232形狀與坩 鍋110内底面111形狀大致相同，當基部123第二表面〗 設置於_ 11G内底面]n上，基部123第二表面咖盘 坩鋼no内底面⑴之間大致呈無縫隙接觸，但不受限於 • 此。 所述突出部124包含數個橫向凸條124ι及數個縱向凸 條1242，上述橫向凸條】241與縱向凸條1242的縱截面（ 大致垂直於内底面111)之面積大致相同且呈方形(如·長方 形或正方形）。並且，所述橫向凸條1241與縱向凸條1242 彼此乂錯排列，以使上述成核空間122形成數個矩陣式排 列的開孔1221。 其中，每一開孔1221的橫截面(大致平行於内底面ηι) • 呈方开且其孔控D3自鄰近基部123朝遠離基部123的方 向皆大致相同。須說明的是，上述開孔】221的孔徑仍大 致為0.5公釐至4〇公釐，且其密度較佳亦為鄕至卯％， 但不受限於此。 此外，亦可透過改變橫向凸條】241及縱向凸條㈣ 的外型，而使所侧孔1221的橫截面被設計為圓形(如圖 川所示）或者使開孔咖的縱截面被設計為梯形(如圖n 和圖12所示）。 附帶說明-點，所述成核空間122除了形成上述開孔 】221之型態外，亦可如圖13和圖14所示，突出部⑶為 9/15 M441675 數個凸柱1243’且上述凸柱1243彼此間隔地呈矩陣式排列 ，以使成核空間122形成數個彼此交錯的長條狀溝槽1222 〇 其中，所述凸柱1243於本實施例中係以方柱為例，並 且溝槽1222的寬度D4大致為〇.5公釐至4〇公釐，且其密 度較佳亦為30%至90%，但不以上述為限. 八Up to 90%. In summary, the carbide structure 12 of the directional solidification apparatus 100 can suppress the size of grain growth of the crucible 200 located in the nucleation space 122 when the crucible 200 is solidified. Thereby, the inner stalks (not shown) formed by the directional solidification apparatus 100 of the present embodiment can be used to reduce the internal defects. 'In addition' because the carbide structure 120 (or nitride structure, graphite structure) described in this embodiment can not react with the broken and does not decompose under the south temperature, so the 'carbide structure 120 (or disordered compound) Structure, graphite structure) suitable for repeated use. 7/15 π Π. The brother clearly shows that, as shown in Fig. 7A, it is the two examples of the bismuth ingot 213 formed when the diameter of the seeding crystal is 1 mm, compared with the conventional one that is formed by the conventional structure. The defect area density comparison chart. Α1 «I 矽Ingot 213 of the present embodiment is cut into a day bowl in the middle and the area, and A2 represents the broken casting key 2丨3 of the present embodiment after cutting the side = side and corner area (4). While B1 represents the conventional spar, the spine is located in the central region after the spine is cut, and B2 represents the conventional crystal enamel which is placed in the side and corner regions after the spin. As is clear from Fig. 7A, the tantalum ingot 213 formed in the present embodiment is obviously improved in terms of defect area density, and has an effect unpredictable by the conventional technique. Further, the ruthenium ingot 213 of the present embodiment was subjected to dicing, and the crystal grains at the bottom thereof were tested to have a diameter of about 77 cm. However, the crystal grain size of the wafer after the cutting of the conventional Shixi ingot is about 13 to L8crn. That is to say, the carbide structure 12 of the directional solidification apparatus 1 of the present embodiment is used for solidifying the grain growth of the Shixijingtang 200 located in the nucleation space 122 when the smelting soup 200 is solidified. size of. [Second Embodiment] Please refer to FIG. 8 to FIG. 14 , which is a second embodiment of the present invention, wherein ' FIGS. 8 , 11 , and 13 are schematic cross-sectional views of the embodiment, and FIGS. 9 , 1 , 12 , and 14 . This is a schematic top view of the present embodiment. This embodiment is similar to the first embodiment' and the difference between the two is mainly in the carbide structure 120, so the configuration of the crucible 110 is not repeated, and the specific difference of the carbide structure 120 is as follows. Referring back to Figures 8 and 9, the carbide structure 120 has a base 8/15 M441675 123 and a projection 124. The base portion i23 has a plate shape and has a first surface 1231 and a second surface 1232. The above-mentioned protruding portion ι24 is self-based. The first surface 1231 of the crucible 123 extends to form, and the base 丨23 and the protrusion 24I24 surround define a nucleation space 丨22. In more detail, the shape of the second surface 1232 of the base portion 123 is substantially the same as the shape of the bottom surface 111 of the crucible 110, when the second surface of the base portion 123 is disposed on the bottom surface _11G, and the second surface of the base portion 123 There is no gap contact between the inner bottom surface (1) of the coiled steel, but it is not limited to this. The protruding portion 124 includes a plurality of lateral ribs 124 ι and a plurality of longitudinal ribs 1242 , and the lateral ribs 241 and the longitudinal ribs 1242 have substantially the same longitudinal section (substantially perpendicular to the inner bottom surface 111 ) and are square ( Such as · rectangle or square). Moreover, the lateral ribs 1241 and the longitudinal ribs 1242 are arranged in a wrong manner to each other such that the nucleation spaces 122 form a plurality of matrix-arranged openings 1221. Wherein, the cross section of each opening 1221 (substantially parallel to the inner bottom surface ηι) is square and its aperture D3 is substantially the same from the adjacent base 123 toward the direction away from the base 123. It should be noted that the aperture of the opening 221 is still substantially 0.5 mm to 4 mm, and the density is preferably 鄕 to 卯%, but is not limited thereto. In addition, by changing the shape of the lateral ribs 241 and the longitudinal ribs (4), the cross-section of the side holes 1221 is designed to be circular (as shown in the middle of the river) or the longitudinal section of the open-hole coffee is Designed as a trapezoid (as shown in Figure n and Figure 12). Incidentally, the nucleation space 122 may have the shape of the above-mentioned opening 221, as shown in FIG. 13 and FIG. 14, the protruding portion (3) is 9/15 M441675, and the plurality of protrusions 1243' and the above The pillars 1243 are arranged in a matrix arrangement with each other such that the nucleation space 122 forms a plurality of elongated grooves 1222 which are interlaced with each other. The pillars 1243 are exemplified by square pillars in this embodiment, and The width D4 of the groove 1222 is approximately 〇5 mm to 4 mm, and the density thereof is preferably 30% to 90%, but not limited to the above.
再者，所述碳化物結構12〇設置於坩鍋11〇内底面1U 上時，坩鍋110環側面112頂緣離内底面lu的距離D1為 碳化物結構120頂緣離内底面ln的距離D2之至少五倍。 更詳細地說，碳化物結構120的高度D2較佳為掛 側面m高度01的15%以下。 巧110衣 藉此，本實施例的碳化物結構120所形成之成核空間 122，能抑制位於其内之晶粒生長的尺寸。藉以使得利用本 實施例定向凝固裝置1〇〇所形成的矽鑄錠(圖未示），可降低 其内部之缺陷。 _ 本實施例所述之碳化物結構12〇的較佳選擇為 結構。再者，就材質上來說，其亦可以為氮化物結構，且 較佳選擇為氮化石夕結構；或者為石墨結構。 但於實際應用時’只要碳化物結構12〇(或氮化石夕結構 、石墨結構)可在尚溫環境(如：矽熔料熔融成矽炫湯時的溫 度)下不與矽反應且不分解即可，並不受限於上述的碳化矽 結構或氮化矽結構。 此外，由於本實施例所述之碳化物結構12〇(或氮化物 結構、石墨結構）可在高溫環境下不與石夕反應且不分解，因 此，碳化物結構12〇(或氮化物結構、石墨結構)適於重複使 用。 10/15 、而補充說明的是’本實施例所述的碳化物結構120 β 以一體成型的板狀構造為例，但於實際應用時，碳化物= 構120亦可依设计者需求而加以變化。舉例來說碳化物 結構可為k合式的構造，亦即，透過數個碳化物： 形成如本實施例所述之板狀構造。 — 〔實施例的可能功效〕 综合來說，本創作實施例的定向凝固裝置，其透過β 化物結構（或氮化物結構、；5墨結構）所界定出的成核空= 三以使位於坩鍋底部的矽熔湯所凝固之晶粒具有較小的粒 咎，進而降低矽熔湯所凝固形成的矽鑄錠内部缺陷。, 再者，使用者可透過選用引晶顆粒之型態、以不同排 列方式設置引晶顆粒、或設計突出部之外型，以使成核* 間形成使用者所需之空間型態。 乂二 另，由於所述之碳化物結構（或氮化物結構、石墨結構 )可在向溫壞境下不與⑦反應且不分解，因此，碳化物結 或氮化物結構、石墨結構)適於重複使用。 ° 以上，述僅為本創作之實施例，其並非用以侷限本創 作之專利範圍。 【圖式簡單說明】 圖1為本創作第-實施例所述定向凝固裝置的剖視示意圖 圖2為圖1的俯視示意圖； 圖3為圖1另-排列形式的俯視示意圖； 圖4為本創作第—實施例所述定向凝固裝置之5丨晶顆粒排 列為兩層的剖視示意圖； 圖5為本創作第-實施例所較向凝固裝置之引晶顆粒為 11/15 M441675 另一態樣的剖視示意圖； 圖6為圖5的俯視示意圖； 圖7為本創作第一實施例所述定向凝固裝置的使用狀態示 意圖； 圖7A為本創作所形成之矽鑄錠相較於習知矽鑄錠兩者的 缺陷面積密度示意圖； 圖8為本創作第二實施例所述定向凝固裝置的剖視示意圖 圖9為圖8的俯視示意圖， 圖10為圖8另一態樣的俯視示意圖； 圖11為本創作第二實施例所述定向凝固裝置另一型態的 剖視示意圖； 圖12為圖11的俯視示意圖； 圖13為本創作第二實施例所述定向凝固裝置之突出部為 凸柱的剖視示意圖；及 圖14為圖13的俯視示意圖。 【主要元件符號說明】 100定向凝固裝置 Π0坩鍋 111内底面 112環側面 120碳化物結構 121引晶顆粒 122成核空間 1221開孔 1222溝槽 12/15 M441675 ]23基部 1231第一表面 1232第二表面 124突出部 1241橫向凸條 1242縱向凸條 1243凸柱 200矽熔湯 L引晶顆粒的橫戴面邊長 D1坩鍋環側面頂緣離内底面的距離 D2碳化物結構頂緣離内底面的距離 D3開孔的孔徑 D4溝槽寬度 13/15Furthermore, when the carbide structure 12 is disposed on the inner bottom surface 1U of the crucible 11 , the distance D1 of the top edge of the ring side 112 of the crucible 110 from the inner bottom surface lu is the distance from the top edge of the carbide structure 120 from the inner bottom surface ln. At least five times as much as D2. More specifically, the height D2 of the carbide structure 120 is preferably 15% or less of the height 01 of the hanging side m. Thus, the nucleation space 122 formed by the carbide structure 120 of the present embodiment can suppress the size of grain growth therein. Therefore, by using the bismuth ingot (not shown) formed by the directional solidification apparatus 1 of the present embodiment, the internal defects can be reduced. Preferably, the carbide structure 12A described in this embodiment is a structure. Further, in terms of material, it may also be a nitride structure, and is preferably selected from a nitride structure or a graphite structure. However, in practical applications, as long as the carbide structure 12〇 (or nitride structure, graphite structure) can not react with hydrazine and does not decompose in a warm environment (such as the temperature at which the cerium melt is melted into sputum soup) That is, it is not limited to the above-described tantalum carbide structure or tantalum nitride structure. In addition, since the carbide structure 12〇 (or nitride structure, graphite structure) described in this embodiment can not react with the stone in the high temperature environment and does not decompose, the carbide structure 12〇 (or nitride structure, Graphite structure) suitable for repeated use. 10/15, and additionally, the carbide structure 120 β described in the present embodiment is exemplified by an integrally formed plate-like structure, but in practical use, the carbide = structure 120 can also be added according to the designer's needs. Variety. For example, the carbide structure may be of a k-type configuration, i.e., through a plurality of carbides: a plate-like configuration as described in this embodiment is formed. - [Possible Efficacy of the Embodiment] In summary, the directional solidification apparatus of the present embodiment is nucleated by a β-structure (or nitride structure, 5 ink structure) to make it located in the 坩The grains solidified by the enamel soup at the bottom of the pot have smaller granules, which in turn reduces the internal defects of the bismuth ingot formed by the smelting of the smelting soup. Furthermore, the user can select the type of seeding particles, set the seeding particles in different rows, or design the shape of the protrusions so that the nucleation* forms a spatial pattern desired by the user. Further, since the carbide structure (or nitride structure, graphite structure) can be reacted without decomposition with 7 in a temperature environment, and is not decomposed, a carbide structure or a nitride structure or a graphite structure is suitable. reuse. ° The above is only an example of this creation, and it is not intended to limit the scope of the patents created by this creation. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view of the directional solidification apparatus according to the first embodiment of the present invention; FIG. 2 is a top plan view of FIG. 1; FIG. 3 is a top plan view of another arrangement of FIG. The five crystal grains of the directional solidification apparatus described in the first embodiment are arranged in two layers. FIG. 5 is a schematic view of the first embodiment of the present invention. The seeding particles of the solidification apparatus are 11/15 M441675. Figure 6 is a top plan view of Figure 5; Figure 7 is a schematic view showing the state of use of the directional solidification device according to the first embodiment of the present invention; Figure 7A is a schematic view of a cast ingot formed by the present invention. FIG. 8 is a schematic cross-sectional view of the directional solidification apparatus according to the second embodiment of the present invention, FIG. 9 is a top plan view of FIG. 8, and FIG. 10 is a top plan view of another aspect of FIG. Figure 11 is a cross-sectional view showing another embodiment of the directional solidification device according to the second embodiment of the present invention; Figure 12 is a plan view of Figure 11; Figure 13 is a projection of the directional solidification device according to the second embodiment of the present invention; a schematic cross-sectional view of the stud And Figure 14 is a top plan view of Figure 13. [Main component symbol description] 100 directional solidification device Π0 crucible 111 inner bottom surface 112 ring side surface 120 carbide structure 121 seeding particles 122 nucleation space 1221 opening 1222 groove 12/15 M441675 ] 23 base 1231 first surface 1232 Two surface 124 protrusions 1241 lateral ribs 1242 longitudinal ribs 1243 protrusions 200 矽 molten soup L granules of the transverse surface length D1 crucible ring side top edge distance from the inner bottom surface D2 carbide structure top edge The distance from the bottom surface D3 The aperture of the opening D4 The width of the groove 13/15