TWM339081U - An LED chip package structure with a high-efficiency light-emitting effect - Google Patents
An LED chip package structure with a high-efficiency light-emitting effect Download PDFInfo
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- TWM339081U TWM339081U TW97203176U TW97203176U TWM339081U TW M339081 U TWM339081 U TW M339081U TW 97203176 U TW97203176 U TW 97203176U TW 97203176 U TW97203176 U TW 97203176U TW M339081 U TWM339081 U TW M339081U
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- 230000000694 effects Effects 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000084 colloidal system Substances 0.000 claims abstract description 34
- 235000012431 wafers Nutrition 0.000 claims description 17
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- 229910052751 metal Inorganic materials 0.000 claims description 6
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- 238000005286 illumination Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000010436 fluorite Substances 0.000 claims 1
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- 239000011573 trace mineral Substances 0.000 claims 1
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- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 229920001342 Bakelite® Polymers 0.000 description 2
- 239000004637 bakelite Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 229910052747 lanthanoid Inorganic materials 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000033458 reproduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
Description
M339081 八、新型說明： 【新型所屬之技術領域】 本創作係有關於一種發光二極體晶片之封裝結構，尤 指-種具有高效率侧向發光效果之發光二極體^ 口片之= 裝結構。 【先前技術】 請參閱第一圖所示，其係為習知發光二極體之封裝方 •法之流程圖。由流程圖中可知，習知發光二極體之封裝方 法’其步驟包括.首先’提供複數個封裝完成之發光二極 體（packagedLED) (S800);接著，提供—條狀基板:體 (stripped substrate body )，其上具有—正極導電軌跡 (positive electrode trace)與一負極導電軌跡（狀邮― electrode trace )( S802 );最後，依序將每—個封裝完成 之發光二極體（packaged LED)設置在該條狀基板本體 上，並將每一個封裝完成之發光二極體（packaged]LED) •之正、負極端分別電性連接於該條狀基板本體之正、負極 ， 導電執跡（S804)。 、 . 然而，關於上述習知發光二極體之封裝方法，由於每 顆封叙元成之發光二極體（package(j Led )必須先從一 整塊發光一極體封裝切割下來，然後再以表面黏著技術 i (SMT)製程，將每一顆封裝完成之發光二極體（packaged le=)設置於該條狀基板本體上，因此無法有效縮短其製 私¥間’再者’發光時，該等封裝完成之發光二極體 5 M339081 - (packaged LED )之間會有暗帶（dark band )現象存在， • 對於使用者視線仍然產生不佳效果。 請參閱第二圖所示，其係為習知發光二極體應用於侧 向發光之示意圖。由圖中可知，當習知之發光二極體晶片 D應用於侧向發光時（例如：使用於筆記型電腦螢幕之導 • 光板Μ之侧向光源），由於筆記型電腦螢幕之導光板Μ非 . 常薄的關係，該發光二極體晶片D之基座S 1的長度d 則必須相對的縮短。換言之，由於該基座S 1的長度 • 太短的關係，習知之發光二極體晶片D將無法得到有效的 散熱效果，進而產生發光二極體晶片D因過熱而燒壞的情 形。 是以，由上可知，目前習知之發光二極體的封裝方法 及封裝結構，顯然具有不便與缺失存在，而待加以改善者。 緣是，本創作人有感上述缺失之可改善，且依據多年 來從事此方面之相關經驗，悉心觀察且研究之，並配合學 理之運用，而提出一種設計合理且有效改善上述缺失之本 φ 創作。 【新型内容】 % 本創作所要解決的技術問題，在於提供一種具有高效 率側向發光效果之發光二極體晶片之封裝結構。本創作之 -發光二極體結構於發光時，形成一連續之發光區域’而無 -暗帶（dark band )及光衰減（decay )的情況發生’並且 本創作係透過晶片直接封裝（Chip On Board，COB)製 6 M339081 程並利用麗模（diemGld)的方式， 地縮短其製程時間，而能進行大量生產。 結構設計更適用於各種光源，諸如背光桓 壯I乍之 照明用燈、或是掃描器光源等應用 太^ 、且條、 範圍與產品。 自4㈣所應用之 另外，本創作之封裝膠體透過特殊模具之 創作之發光二極體晶片封 的二 1=4側:發光的效果，因此本創作不會有二不 足的情況發生。換言之，本釗作不描 …、 能，更能顧到應用於薄型殼體内之散敎側向投光的功 為了解決上述技術問題，根據本創 有括高嶋M339081 VIII. New Description: [New Technology Field] This creation is about a package structure of a light-emitting diode chip, especially a kind of light-emitting diode with high efficiency side-emitting effect. structure. [Prior Art] Please refer to the first figure, which is a flow chart of the package method of the conventional light-emitting diode. As can be seen from the flow chart, the conventional method of packaging a light-emitting diode includes the steps of: first providing a plurality of packaged LEDs (S800); and then providing a strip substrate: stripped a substrate body having a positive electrode trace and a negative electrode trace (S802); and finally, each packaged LED is sequentially packaged. Provided on the strip substrate body, and electrically connecting each of the packaged LEDs of the packaged positive and negative terminals to the positive and negative poles of the strip substrate body, and conducting the conductive trace (S804). However, regarding the above-mentioned conventional LED package method, since each packaged LED (package(j Led ) must be cut from a whole piece of the light-emitting package, and then The surface mount technology i (SMT) process is used to set each packaged light-emitting diode (packaged le=) on the strip substrate body, so that it is not possible to effectively shorten the light-emitting time of the package. There is a dark band between the packaged light-emitting diodes 5 M339081 - (packaged LED), and the user's line of sight still has a poor effect. Please refer to the second figure, It is a schematic diagram of a conventional light-emitting diode applied to lateral light emission. It can be seen from the figure that when the conventional light-emitting diode chip D is applied to the lateral light-emitting (for example, the guide for the screen of the notebook computer) The lateral light source), because the light guide plate of the notebook computer screen is not normally thin, the length d of the base S 1 of the light-emitting diode wafer D must be relatively shortened. In other words, due to the base S Length of 1 • Too short In the relationship, the conventional light-emitting diode wafer D will not be able to obtain an effective heat-dissipating effect, and the light-emitting diode wafer D may be burnt due to overheating. Therefore, it is known from the above that the conventional light-emitting diode package is conventionally known. The method and package structure obviously have inconvenience and lack of existence, and those who need to be improved. The reason is that the creator feels that the above-mentioned deficiency can be improved, and based on years of experience in this field, he carefully observes and studies it, and In conjunction with the application of the theory, a design that is reasonable in design and effective in improving the above-mentioned defects is proposed. [New content] % The technical problem to be solved by this creation is to provide a light-emitting diode chip with high efficiency side-emitting effect. Package structure. The present invention-light-emitting diode structure forms a continuous light-emitting area when light is emitted, and no-dark band and light decay occurs. And the creation is directly packaged through the wafer. (Chip On Board, COB) 6 M339081 process and use the diemGld method to shorten the process time and make it large Production. The structural design is more suitable for various light sources, such as backlights, lighting lamps, or scanner light sources, etc., and the scope, range and products. In addition to the application of 4 (4), the encapsulation colloid of this creation The two 1=4 side of the LED package with the special mold creation: the effect of illuminating, so there is no shortage of this creation. In other words, this book does not describe..., can, more can be considered In order to solve the above technical problems, the work of diverging lateral light projection applied in a thin casing is based on the present invention.
封衣、、、口構’其包括· 一其;S 體單元、及-框架單元基板早發料元、—封裝膠 二中料光單①係具有複數個設置 =光::?=。該封装膠體單元係具有-覆蓋:該等 之條狀封裝膠體，其中該條狀封褒膠體 表刚表面係分別具有-膠體弧面（colloid cambered surface) ( colloid light-exiting surface)。練架單初㈣―層覆蓋韻絲單元上並包 覆该條狀封裝膠體而只露出該膠體出光面（ colloid light-exiting surface)之框架層（framelayer)。 因此，本創作之發光二極體結構於發光時，形成一速 續之發光區域，而無暗帶（darkband)及光衰減（decay) M3 3 9081 =情，=。並且，本創作係透過晶片直接封裝（加 ⑽）製程並利用壓模（仙_d)的方式，以使 付本創作可有效地縮短其製程時間，而能進行大量生 再者，由於本創作之發光二極體晶片封裝結 況下’即可產生側向發光的效果。因此，本創作 生側向投光的功能，更能顧到應用於薄型殼體内之散熱效 果。 > 為了能更進-步瞭解本創作為達成預定目的 ^支術、手段及功效，請參_下有關本㈣之詳细· ㈣圖’相信本創作之目的、特徵與特點，當可由此 深入且具體之瞭m所附圖式僅提供參考與說=， 並非用來對本創作加以限制者。 ’ 【實施方式】 請參閱第三圖、第三a圖至第三f圖、 第三F圖所示’本創作之第—實施例係提供 :^ 率側向發光效果之發光二極體晶片之封裝方法，文 列步驟·· /、包括下 …首先，請配合第三a圖及第三八圖所示，提供 單几1，其具有一基板本體（substratebody)丄〇 土 別形成於該基板本體i 〇上之複數個正極導電：： P〇sltlve electrode trace)工 i 與複數個負極導、 (negative electrode trace) 1 2 ( S100)。 吓 8 M339081 其中，該基板本體1 〇係包括一金屬層（metallayer) 1 0 A及一成形在該金屬層1 〇A上之電木層（bakelite layer) 1 〇 B (如第三a圖及第三A圖所示）。再者，依 不同的設計需求，該基板單元丄〇係可為一印刷電路板 (PCB )、一 軟基板（flexible substrate )、一 銘基板 (aluminum substrate )、一陶瓷基板（ceramic substmte )、 或一銅基板（copper substrate)。此外，該正、負極導電 軌跡1 1、1 2係可採用|呂線路（aluminum circuit)或報 線路（silver circuit)，並且該正、負極導電軌跡丄工 2之佈局（layout)係可隨著不同的需要而有所改變。 接著，請配合第三b圖及第三B圖所示，透過矩障 (matrix)的方式，分別電性連接地設置複數個發光二極 體晶片2 0於該基板本體1 〇上，以形成複數排横向發光 二極體晶片排（transverse LED chip row) 2，其中每〜 個發光二極體晶片2 0係具有分別電性連接於該基极單 元的正、負極導電執跡1 、；！ 2之一正極端（positive electiodeside)2 0 1 與一負極端（negative electrode side) 2 0 2 (S102) 〇 此外，以本創作之第一實施例而言，每一個發光二極 體晶片2 0之正、負極端2 0 1、2 〇 2係透過兩相對應 之’導線W並以打線（wire-bounding)的方式，以與該基板 單元1之正、負極導電軌跡1 1、1 2產生電性連接。再 者，每一排横向發光二極體晶片排（transverse LED chip 9 M339081 row) 2係以一直線的排列方式設置於該基板單元丄之基 f本體1 0上’並且每一個發光二極體晶片2 〇係可為一 監色發光二極體晶片（blue LED)。 夕^ 上述邊專發光一極體晶片2 0之電性連接方式 ^非用以限定本創作’例如··請參閱第四圖所示（本創作 發光二極體晶片透過覆晶的方式達成電性連接之示意 圖）/每一個發光二極體晶片2 〇 /之正、負極端2 g 1 、2 0 2 —係透過複數個相對應之錫球B並以覆晶 (mp-ChiP)的方式，以與該基板單元丄/之正、負極導 電軌跡11>、12/產生電性連接。 、，後，請配合第三c圖、第三c圖及第五圖所示，透 過一第一模具單元（first mold unit) Μ 1，將一封裝膠體 (package colloid ) 3 縱向地（loingitudinally )覆蓋在所 有横向發光二極體晶片排（longitudinal LEd dlip row ) 2 上其中该封裝膠體3之上表面係具有複數個:相對應，袁等 尤、向考X光一極體晶片排2之膠體弧面（colloid cambered surface) 3 0 〇，並且該封裝膠體3係具有複數個設置於 石亥荨相對應膠體弧面（c〇ll〇id cambered surface) 3 0 0 别端之膠體前端面（colloid lateral surface ) 3 0 1 (S104) 〇 其中，該第一模具單元Μ 1係由一第一上模具（first upper mold) Μ 1 1及一用於承載該基板本體1 〇之第一 下模具（first lower mold ) Μ 1 2所組成，並且該第一上 M339081 • 模具Ml 1係具有第一通道（first channel) Μ 1 10， ^ 其中該第一通道Μ 1 1 〇係具有複數個凹槽（concave groove) G，而每一個凹槽G之上表面及前表面係分別具 有一個相對應該膠體弧面（colloid cambered surface) 3 0 0 之模具弧面（mold cambered surface ) G 1 〇 〇 及一 • 個相對應該膠體前端面（colloid lateral surface) 3 0 1之 -模具前端面（mold lateral surface) G 1 〇 1。再者，該 封裝膠體3係可依據不同的使用需求，而選擇為：由一矽 鲁 膠（silicon)與一螢光粉（fluorescent powder)所混合形 成之螢光膠體（fluorescent resin )、或由一環氧樹脂 (epoxy)與一螢光粉（fluorescent powder)所混合形成 之螢光膠體（fluorescent resin)。 緊接著，請配合第三d圖及第三D圖所示，沿著每兩 個縱向發光二極體晶片2 0之間，横向地（transversely) 切割該封裝膠體3，以形成複數個彼此分開地覆蓋於海一 排横向發光二極體晶片排2上之條狀封裝膠體3 0，其中 _ 每一個條狀封裝膠體3 0的上表面係為該膠體弧面 • ( colloid cambered surface) 3 0 0，並且每一個條狀封 • 裝膠體3 0係具有一形成於該膠體弧面3 0 0前端之膠 體出光面（colloid light-exiting surface ) 302 (S106)。 然後，請配合第三e圖及第三E圖所示，透過一第二 模具單元（second mold unit) Μ 2，將一框架單元4覆蓋 於該基板本體1 〇及該等條狀封裝膠體3 0上並且填充 M339081 狀封編3〇之間（謂)。其中 二 椟具早兀]VI 2係山 ^ ’、由一弟二上模具（second upper mold) Μ 及用於承载該基板本體1 〇之第二下模具（second 1〇醫削1(1)^2所組成，並且該第二上模賴21係 八有彳木相對應該框架單元4之第二通道（second channel) Μ 2 1 Q，此外該第二通道M 2 1 ◦的尺寸係 與5亥框架單元4的尺寸相同。 敢後’凊再參閱第三e圖，並配合第三f圖及第三F 圖所示，沿著每兩個縱向發光二極體晶片2 〇之間，横向 地（transversely)切割該框架單元4及該基板本體1 ◦， 以形成衩數條光棒（light bar) L 1，並且使得該框架單 元4被切割成複數個分別只讓每一條光棒l1上之條狀 封衣膠體 3 0 的膠體出光面（colloid light-exiting surface ) 3 0 2露出之框架層40 (SI 10)。其中，該等框架層4 0係可為不透光框架層（ opaque frame layer )，例如，：白 色框架層（white frame layer )。 請參閱第六圖、第六a圖、及第六A圖所示，第二實 施例之步驟「S200至S202」及「S206至S210」係分別 與第一實施例之步驟「S100至S102」及「S106至S110」 相同。 再者，於步驟S202與S206之間，本創作之第二實 施例更進一步包括··首先，請參閱第六a圖及第六A圖所 示，透過一第一模具單元（first mold unit) Μ 1 將複 12 M339081 • 數個條狀封裝膠體3 0横向地（transversely)分別覆蓋該 等横向發光二極體晶片排（longitudinal LED chip row ) 2 上，其中每一個條狀封裝膠體3 0之上表面係具有一膠體 弧面（colloid cambered surface) 3 0 0，並且每一個條 狀封裝膠體3之侧表面係具有一形成於該膠體弧面3 0 0 前端之膠體出光面（colloid liglit_exiting surface ) 3 0 -2 (S206)〇 其中，該第一模具單元Ml /係由一第一上模具 _ ( first upper mold) Μ 1 1 ^及一用於承載該基板本體1 0之第一下模具（first lower mold ) Μ 1 2 —所組成，並 且該第一上模具Μ 1 1 /係具有複數個第一通道（first channel) Μ 1 1 〇 〃，其中每一個第一通道Μ 1 1 〇 一 之上表面及前表面係分別具有一個相對應該膠體弧面 (colloid cambered surface) 3 0 0 之模具弧面（mold cambered surface) G 1 0 0 /及一個相對應該膠體潘端 面（colloid lateral surface) 3 0 2 之模具前端面（mold 鲁 lateral surface) G1 0 1〆，並且每一個第一通道Ml 1 ' 〇 /的尺寸係與每一個條狀封裝膠體3 0的尺寸相同。 • 請參閱第七圖所示，其係為本創作發光二極體晶片之 封裝結構應用於側向發光之示意圖。由圖中可知，當本創 作之發光二極體晶片D應用於侧向發光時（例如：使用於 筆記型電腦螢幕之導光板Μ之側向光源），該發光二極體 晶片D之基座S 2的長度β可依散熱的需要而加長（不 13 M339081 像習知一樣受導光板Μ厚度的限制）。齡之，由於該基 座S 2的長度β可依散熱的需要而加長，因此本創作 發光二極體晶片D將可得到有效的散熱效果，進而可 叙光一極體晶片D因過熱而燒壞的情形。 紅所述，賴叙發光二#體、纟缚於發光時， -連繽之發光區域’而無暗帶（dark band)及光 -(二7)的情況發生，並且本創作係透過晶片直接二 j up On Board ’ C0B)製程並利用麵（此動⑷的 2二使:ί創作可有效地縮短其製程時間，而能進行 、里 者，由於本創作之發光二極體晶片封| έ士;^ 内之散熱^的舰’更能顧到應用於薄型殼體 惟，以上所述，僅為本創作最佳之—的且㉙ 砰細說明與圖式，惟本創作之特徵 非 創作申請專利範圍之精神與其 <貝轭例，皆應包含於本創作 文儿 藝者在本創作之领#肉可，任何熟悉該項技 莫在以3 Γ ί 易思及之變化或修飾皆可涵 風在Μ下本案之專利範圍。 白J㈡ 【圖式簡單說明】 弟—圖係為習知發光二極體之封裝方法之流程圖； 14 M339081 • 第二圖係為習知發光二極體應用於侧向發光之示意圖； • 第三圖係為本創作封裝方法之第一實施例之流程圖； 第三a圖至第三f圖分別為本創作封裝結構之第一實施 例之封裝流程立體示意圖； 第三A圖至第三F圖分別為本創作封裝結構之第一實施 ， 例之封裝流程剖面示意圖； . 第四圖係為本創作發光二極體晶片透過覆晶（flip-chip) 的方式達成電性連接之示意圖； • 第五圖係為本創作第三C圖未灌入封裝膠體前之示意圖； 第六圖係為本創作封裝方法之第二實施例之流程圖； 第六a圖為本創作封裝結構之第二實施例之部分封裝流 程立體示意圖； 第六A圖為本創作封裝結構之第二實施例之部分封裝流 程剖面示意圖；以及 第七圖係為本創作發光二極體晶片之封裝結構應用於侧 向發光之示意圖。 【主要元件符號說明】 [習知] 發光二極體晶片 D 導光板 Μ 基座 S 長度 a [本創作] 15 M339081 基板皁元 1 基板本體 10The sealing, and the mouth structure 'includes one'; the S body unit, and the frame unit substrate early-distribution element, the encapsulating glue, the second material, the light single 1 system has a plurality of settings = light::?=. The encapsulating colloid unit has a cover strip of the strip-shaped encapsulating colloid, wherein the strip-shaped encapsulating colloidal surface has a colloid light-exiting surface. The initial (4) layer covers the silk element unit and covers the strip-shaped encapsulant colloid to expose only the frame layer of the colloid light-exiting surface. Therefore, the light-emitting diode structure of the present invention forms a continuous light-emitting region when illuminated, without darkband and light attenuation (M3 3 9081 = emotion, =. Moreover, this creation system directly encapsulates (plus (10)) the process through the wafer and utilizes the stamper (Xian_d), so that the creation of the book can effectively shorten the process time, and can carry out a large number of reproductions, due to the creation. In the case of a light-emitting diode package, the side-emitting effect can be produced. Therefore, the function of the lateral light projection of the presenter can better consider the heat dissipation effect applied in the thin casing. > In order to be able to further understand the purpose of this creation in order to achieve the intended purpose, the means and functions, please refer to the details of this (4). (4) Figure 'I believe the purpose, characteristics and characteristics of this creation, when The in-depth and specific reference to m is for reference and explanation only, and is not intended to limit the creation. [Embodiment] Please refer to the third figure, the third a to the third f, and the third F. The first embodiment of the present invention provides: a light-emitting diode chip with a lateral light-emitting effect. The encapsulation method, the list of steps, ..., and the following: First, please provide a single 1 with a substrate body (the substrate body) formed in the third a figure and the third eight figure. The plurality of positive electrodes on the substrate body i are electrically conductive:: P〇sltlve electrode trace) and a plurality of negative electrode traces 1 2 (S100).惊8 M339081, wherein the substrate body 1 comprises a metal layer 10 A and a bakelite layer 1 〇 B formed on the metal layer 1 ( A (as shown in the third figure and Figure 3A shows). Furthermore, the substrate unit can be a printed circuit board (PCB), a flexible substrate, an aluminum substrate, a ceramic substrate (ceramic substmte), or A copper substrate. In addition, the positive and negative conductive traces 1 1 and 1 2 can adopt an aluminum circuit or a silver circuit, and the layout of the positive and negative conductive traces 2 can be followed. Changed with different needs. Then, in combination with the third b diagram and the third B diagram, a plurality of light emitting diode wafers 20 are electrically connected to each other on the substrate body 1 through a matrix to form a matrix. A plurality of transverse LED chip rows 2, wherein each of the light-emitting diode chips 20 has positive and negative conductive traces 1 electrically connected to the base unit, respectively; 2 a positive electiodeside 2 0 1 and a negative electrode side 2 0 2 (S102) Further, in the first embodiment of the present invention, each of the light emitting diode chips 20 The positive and negative terminals 2 0 1 , 2 〇 2 are transmitted through two corresponding 'wires W and wire-bounding to generate positive and negative conductive tracks 1 1 and 1 2 with the substrate unit 1 Electrical connection. Furthermore, each row of transverse LED chips 9 M339081 row 2 is disposed in a straight line arrangement on the base of the substrate unit f1 body 10 and each of the light emitting diode chips 2 The lanthanide can be a color LED chip (blue LED).夕^ The electrical connection method of the above-mentioned side-light-emitting one-pole wafer 20 is not used to limit the creation. For example, please refer to the fourth figure (the light-emitting diode wafer of the present invention is formed by flip chip). Schematic diagram of the sexual connection) / each of the light-emitting diode chips 2 〇 / positive, negative end 2 g 1 , 2 0 2 - through a plurality of corresponding solder balls B and in the form of flip-chip (mp-ChiP) And electrically connected to the positive and negative conductive traces 11>, 12/ of the substrate unit 丄/. Then, in conjunction with the third c-figure, the third c-figure, and the fifth-figure, a package colloid 3 is longitudinally (longing) through a first mold unit Μ1. Covering all the horizontal LED rows (longitudinal LEd dlip row 2), the surface of the encapsulant 3 has a plurality of surfaces: corresponding, Yuan et al., colloidal arc of the X-ray one-pole wafer row 2 Colloid cambered surface 3 0 〇, and the encapsulating colloid 3 has a plurality of colloidal front faces disposed at the other end of the corresponding colloidal cambered surface (c〇ll〇id cambered surface) The first mold unit Μ 1 is composed of a first upper mold Μ 1 1 and a first lower mold for carrying the substrate body 1 (first) Lower mold ) Μ 1 2, and the first upper M339081 • The mold Ml 1 has a first channel first 1 10, ^ where the first channel Μ 1 1 has a plurality of grooves (concave Groove) G, and above each groove G The face and the front surface respectively have a mold cambered surface G 1 相对 corresponding to a colloid cambered surface 300 and a corresponding colloid lateral surface 3 0 1 - mold front surface (mold lateral surface) G 1 〇 1. Furthermore, the encapsulant 3 can be selected from a fluorescent resin formed by mixing a silicon and a fluorescent powder according to different usage requirements, or by An epoxy resin formed by mixing an epoxy with a fluorescent powder. Next, in conjunction with the third d-picture and the third D-picture, the encapsulation colloid 3 is transversely cut along each of the two longitudinal light-emitting diode wafers 20 to form a plurality of separate bodies. Covering a strip of encapsulating colloids 30 on a row of horizontally-emitting diode chips 2 in the sea, wherein the upper surface of each strip of encapsulating colloids 30 is the colloid cambered surface. 0, and each of the strip seals 100 has a colloid light-exiting surface 302 (S106) formed at the front end of the colloidal arc surface. Then, a frame unit 4 is covered on the substrate body 1 and the strip-shaped encapsulant 3 through a second mold unit Μ 2 as shown in the third and third E-frames. 0 on and fill the M339081-like seal between 3 ( (predicate). The second one has an early 兀] VI 2 series mountain ^ ', a second upper mold Μ and a second lower mold for carrying the substrate body 1 (second 1 〇 削 1 (1) ^2 is composed, and the second upper mold is 21, and the second wooden layer corresponds to the second channel Μ 2 1 Q of the frame unit 4, and the size of the second channel M 2 1 ◦ is 5 The dimensions of the frame unit 4 are the same. After the daring, please refer to the third e-picture, and in conjunction with the third f-figure and the third F-picture, along each of the two longitudinally-emitting diode chips 2, horizontally The frame unit 4 and the substrate body 1 are cut transversely to form a plurality of light bars L1, and the frame unit 4 is cut into a plurality of pieces, respectively, for each of the light bars l1 a stripe-shaped encapsulating surface of the strip-like sealant 30, and an exposed frame layer 40 (SI 10), wherein the frame layer 40 is an opaque frame layer (opaque Frame layer ), for example: white frame layer. Please refer to the sixth figure, the sixth a picture, and the As shown in FIG. 2, the steps "S200 to S202" and "S206 to S210" of the second embodiment are the same as the steps "S100 to S102" and "S106 to S110" of the first embodiment. Further, in step S202 Between S206 and S206, the second embodiment of the present invention further includes: · First, please refer to the sixth a figure and the sixth A picture, through a first mold unit Μ 1 will be 12 M339081 • a plurality of strip-shaped encapsulants 30 laterally covering the longitudinal LED chip rows 2, wherein each of the strip-shaped encapsulants 30 has a colloid on the surface a colloid cambered surface 300, and a side surface of each strip-shaped encapsulant 3 has a colloid liglit_exiting surface 3 0 -2 formed at the front end of the colloidal arc surface 300 (S206) Wherein the first mold unit M1 is composed of a first upper mold Μ 1 1 ^ and a first lower mold 承载 1 for carrying the substrate body 10 2 - composed of, and the first upper mold Μ 1 1 / system has a plurality of first channels first 1 1 〇〃, wherein each of the first channels Μ 1 1 〇 an upper surface and a front surface system respectively have a corresponding colloidal cambered surface (colloid cambered Surface) 3 0 0 mold cambered surface G 1 0 0 / and a colloid lateral surface 3 0 2 mold front surface (mold rulateral surface) G1 0 1 〆, and The size of each of the first passages M1 1 '〇/ is the same as the size of each of the strip-shaped encapsulants 30. • Please refer to the figure in Figure 7, which is a schematic diagram of the application of the package structure of the light-emitting diode chip to the lateral illumination. As can be seen from the figure, when the LED array D of the present invention is applied to lateral illumination (for example, a lateral light source used for a light guide panel of a notebook computer screen), the base of the LED chip D is The length β of S 2 can be lengthened according to the need of heat dissipation (not 13 M339081 is limited by the thickness of the light guide plate as is conventional). Since the length β of the susceptor S 2 can be lengthened according to the need of heat dissipation, the present illuminating diode wafer D can obtain an effective heat dissipation effect, and thus the photo-wafer wafer D can be burned out due to overheating. The situation. According to the red, the Lai Xuguang II body, the shackles are in the illuminating, the illuminating area of the singularity, and the dark band and the light- (2) are generated, and the creation is directly through the wafer. Two j up On Board 'C0B) process and use the surface (this move (4) of 2 2: ί creation can effectively shorten the process time, and can be carried out, the inside, due to the creation of the light-emitting diode package | έ The ship's heat sink ^ can be considered for use in thin shells, but the above is only the best for this creation - 29 砰 detailed description and schema, but the characteristics of this creation are not creative The spirit of applying for a patent scope and its <before yoke example should be included in the creation of the author of this creation. #肉可, any familiar with the skill is not changed or modified by 3 Γ ί The scope of the patent can be covered by the wind. White J (2) [Simple description of the drawing] The brother-picture is a flow chart of the packaging method of the conventional light-emitting diode; 14 M339081 • The second picture is a conventional light-emitting diode The schematic diagram of the body applied to the lateral illumination; The flow chart of the embodiment; the third to third f diagrams are respectively a perspective view of the packaging flow of the first embodiment of the creation package structure; the third A to the third F diagrams are respectively the first of the creation and packaging structure Implementation, example of a schematic diagram of the packaging process; . The fourth figure is a schematic diagram of the electrical connection of the light-emitting diode chip through flip-chip; the fifth picture is the third C of the creation The figure is a schematic diagram of the second embodiment of the present invention; the sixth figure is a schematic diagram of a part of the packaging process of the second embodiment of the present invention; 6A is a schematic cross-sectional view of a part of the packaging process of the second embodiment of the present invention; and the seventh figure is a schematic diagram of the package structure of the LED package for lateral illumination. [Main component symbol description] [Authentic] LED Diode Wafer D Light Guide 基座 Base S Length a [This Creation] 15 M339081 Substrate Soap Element 1 Substrate Body 10
金屬層 1〇AMetal layer 1〇A
電木層 1 0 B 正極導電執跡 11 負極導電執跡 12 - 基板單元 1^ 正極導電軌跡 11/ _ 負極導電執跡 12/ 横向發光二極體晶片排2 發光二極體晶片2 0Bakelite 1 0 B Positive Conductive Trace 11 Negative Conductive Trace 12 - Substrate Unit 1^ Positive Conductor Track 11/ _ Negative Conductor Trace 12/ Lateral Light Emitting Diode 2 Light Emitting Diode 2 0
封裝膠體 框架單元 導線 錫球 第一模具單元 正極端 201 負極端 202 發光二極體晶片2 0 / 正極端 201" 負極端 202 3 條狀封裝膠體 30 膠體弧面 300 膠體前端面 301 膠體出光面 3 0 2 4 框架層 40Package colloid frame unit wire solder ball first die unit positive terminal 201 negative terminal 202 light emitting diode chip 2 0 / positive pole 201 " negative terminal 202 3 strip encapsulated colloid 30 colloidal arc surface 300 colloid front end surface 301 colloidal light surface 3 0 2 4 frame layer 40
WW
BB
Ml 第一上模具 Mil 第一通道 Μ 1 1 0 第一下模具 Μ 1 2Ml first upper mold Mil first passage Μ 1 1 0 first lower mold Μ 1 2
凹槽 G 16 M339081 第一模具單元 第二模具單元 光棒 發光二極體晶片 導光板 基座 長度 模具弧面 模具前端面 Μ 1 —第一上模具 第一通道 第一下模具 模具弧面 模具前端面 M2 第二上模具 第二通道 第二下模具 L 1 D Μ S 2 a G 1 〇 〇 G 1 Ο 1 Mir Ml 1 Ο Μ 1 2 ^ G 1 Ο Ο G 1 〇 1 M2 1 M2 1 Ο Μ 2 2Groove G 16 M339081 First Mold Unit Second Mold Unit Light Bar Light Emitting Diode Wafer Light Guide Plate Base Length Mold Arc Face Mold Front End Face 1 — First Upper Mold First Passage First Lower Mold Mold Arc Face Mold Front End Face M2 Second upper mold Second passage Second lower mold L 1 D Μ S 2 a G 1 〇〇G 1 Ο 1 Mir Ml 1 Ο Μ 1 2 ^ G 1 Ο Ο G 1 〇1 M2 1 M2 1 Ο Μ twenty two
1717
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| TWI469395B (en) * | 2012-02-03 | 2015-01-11 | 恆日光電股份有限公司 | Light module |
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| TWI469395B (en) * | 2012-02-03 | 2015-01-11 | 恆日光電股份有限公司 | Light module |
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