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TWI905141B - Methods for manufacturing protective film forming wafers, wafers with protective films, and laminates. - Google Patents

Methods for manufacturing protective film forming wafers, wafers with protective films, and laminates.

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Publication number
TWI905141B
TWI905141B TW110103355A TW110103355A TWI905141B TW I905141 B TWI905141 B TW I905141B TW 110103355 A TW110103355 A TW 110103355A TW 110103355 A TW110103355 A TW 110103355A TW I905141 B TWI905141 B TW I905141B
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Taiwan
Prior art keywords
wafer
aforementioned
resin film
protective film
sheet
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TW110103355A
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Chinese (zh)
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TW202136448A (en
Inventor
中石康喜
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日商琳得科股份有限公司
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Abstract

本實施形態之保護膜形成用片係具備支撐片、及設置於前述支撐片的一個面上的硬化性樹脂膜;前述硬化性樹脂膜為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述晶圓的前述面形成保護膜;前述支撐片於前述一個面中,具有設有前述硬化性樹脂膜之第一區域、及包圍前述第一區域且未設有前述硬化性樹脂膜之第二區域。The protective film forming sheet of this embodiment has a support sheet and a curable resin film disposed on one side of the support sheet; the curable resin film is used to adhere to the surface of the wafer with protruding electrodes and to be cured, thereby forming a protective film on the surface of the wafer; the support sheet has a first region in the first side where the curable resin film is disposed, and a second region surrounding the first region where the curable resin film is not disposed.

Description

保護膜形成用片、具保護膜之晶片的製造方法、以及積層物Methods for manufacturing protective film forming wafers, wafers with protective films, and laminates.

本發明係關於一種保護膜形成用片、具保護膜之晶片的製造方法、以及積層物。 本申請案係基於2020年2月27日於日本提出申請之日本特願2020-031717號主張優先權,將該申請案之內容援用於此。 This invention relates to a protective film forming sheet, a method for manufacturing a chip with a protective film, and a laminate. This application claims priority based on Japanese Patent Application No. 2020-031717, filed on February 27, 2020, the contents of which are incorporated herein by reference.

先前,於將MPU(Micro Processing Unit;微處理單元)或閘陣列等所用之多接腳的LSI(Large Scale Integration;大型積體電路)封裝體構裝於印刷配線基板之情形時,一直採用下述覆晶構裝方法:作為晶片,使用在連接墊部形成有由共晶焊料、高溫焊料、金屬等所構成的突起狀電極(亦稱為「凸塊」)之晶片,藉由所謂倒裝方式,使這些突起狀電極面向晶片搭載用基板上之相對應之端子部並接觸,進行熔融/擴散接合。Previously, when mounting multi-pin LSI (Large Scale Integration) packages used in MPUs (Micro Processing Units) or gate arrays on printed wiring boards, the following flip-chip mounting method was used: As a chip, a chip with protruding electrodes (also called "bumps") formed on the interconnect pads made of eutectic solder, high-temperature solder, metal, etc. was used. By flip-chip bonding, these protruding electrodes faced and contacted the corresponding terminals on the chip mounting substrate, and fusion/diffusion bonding was performed.

在此構裝方法中所用之晶片係藉由將於電路面形成有突起狀電極之晶圓加以單片化而獲得。而且,於該過程中,通常為了保護晶圓之電路面及突起狀電極而將硬化性樹脂膜貼附於電路面,並使該樹脂膜硬化,藉此於電路面形成保護膜。硬化性樹脂膜係以作為與支撐片之積層物的保護膜形成用片之狀態使用。保護膜形成用片中,於支撐片的一面之整個面設有硬化性樹脂膜。The chip used in this fabrication method is obtained by monolithically forming a wafer with protruding electrodes on a circuit surface. Furthermore, during this process, a curable resin film is typically attached to the circuit surface to protect the circuit surface and the protruding electrodes, and the resin film is then cured to form a protective film on the circuit surface. The curable resin film is used as a protective film forming sheet for a laminate with a support sheet. In the protective film forming sheet, a curable resin film is provided on the entire surface of one side of the support sheet.

例如,將保護膜形成用片中之硬化性樹脂膜一邊加熱一邊貼附於晶圓之電路面,繼而沿著晶圓之外周將硬化性樹脂膜與支撐片一併切斷,將保護膜形成用片的未貼附於晶圓之區域去掉後,將支撐片剝離去除。繼而,使硬化性樹脂膜硬化,藉此於晶圓的電路面形成保護膜。繼而,將晶圓加以分割而單片化為晶片,沿著晶片的外周切斷保護膜,藉此獲得於晶片之電路面設有切斷後之保護膜的具保護膜之晶片(參照專利文獻1)。 [先前技術文獻] [專利文獻] For example, a curable resin film in a protective film forming die is heated and then attached to the electrical surface of a wafer. The curable resin film and support sheet are then cut along the outer periphery of the wafer. The areas of the protective film forming die not attached to the wafer are removed, and the support sheet is peeled off. The curable resin film is then cured, thereby forming a protective film on the electrical surface of the wafer. The wafer is then diced to form wafers, and the protective film is cut along the outer periphery of the wafer, thereby obtaining a wafer with a protective film on its electrical surface (see Patent 1). [Prior Art Documents] [Patent Documents]

[專利文獻1]國際公開第2017/077957號。[Patent Document 1] International Publication No. 2017/077957.

[發明所欲解決之課題][The problem the invention aims to solve]

對於此種硬化性樹脂膜,使用相對較柔軟者,以於將該硬化性樹脂膜貼附於晶圓時,充分密接於晶圓的具有突起狀電極之面(電路面)。然而,於將藉由加熱而變柔軟之硬化性樹脂膜貼附於晶圓時,產生如下問題點。For this type of curing resin film, a relatively softer one is used so that when the curing resin film is attached to the wafer, it can make sufficient contact with the surface of the wafer with protruding electrodes (electrical surface). However, when the curing resin film, which becomes soft by heating, is attached to the wafer, the following problems arise.

於晶圓的具有突起狀電極之面貼附經加熱之狀態的硬化性樹脂膜時,會對硬化性樹脂膜施加壓力。硬化性樹脂膜通常係以作為與支撐片之積層物的保護膜形成用片之狀態使用,此種壓力經由支撐片傳遞至硬化性樹脂膜。於是,硬化性樹脂膜會因為該壓力而朝向晶圓之徑向外側的方向流動,亦即,從貼附於晶圓之區域朝向未貼附於晶圓之區域流動。而且,於硬化性樹脂膜未貼附於晶圓之區域、尤其是晶圓之附近區域中,硬化性樹脂膜向相對於晶圓之徑向而正交且從硬化性樹脂膜朝向晶圓之方向流動,會導致該硬化性樹脂膜之厚度較貼附於晶圓之區域更厚。When a heated, cured resin film is attached to the surface of a wafer with protruding electrodes, pressure is applied to the cured resin film. The cured resin film is typically used as a protective film layer in the deposition of a support sheet, and this pressure is transmitted to the cured resin film via the support sheet. Consequently, the cured resin film flows radially outward from the wafer due to this pressure, that is, from the area attached to the wafer towards the area not attached to the wafer. Furthermore, in areas where the hardened resin film is not attached to the wafer, especially in the vicinity of the wafer, the hardened resin film flows orthogonally to the radial direction of the wafer and toward the wafer, resulting in a thicker hardened resin film than in areas where it is attached to the wafer.

如此,硬化性樹脂膜的增厚之區域為多餘部位,且於具保護膜之晶片的任一製造過程中,會直接附著於晶圓之側面、或具保護膜之晶片的製造裝置的任一部位,並污染這些部分。Thus, the thickened areas of the hardened resin film are redundant and will directly adhere to the side of the wafer or any part of the wafer manufacturing apparatus during any manufacturing process of the protective film-coated wafer, contaminating these parts.

本發明之目的在於提供一種保護膜形成用片,係具備用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述面形成保護膜之樹脂膜;並且,前述保護膜形成用片於將前述樹脂膜貼附於晶圓的具有突起狀電極之面時,能夠抑制因前述樹脂膜之流動而形成厚度增厚之區域。 [用以解決課題之手段] The purpose of this invention is to provide a protective film forming sheet, comprising a resin film for attaching to and curing a surface of a wafer with protruding electrodes, thereby forming a protective film on the aforementioned surface; and, when the aforementioned protective film forming sheet is used to attach the resin film to the surface of the wafer with protruding electrodes, it can suppress the formation of areas of increased thickness due to the flow of the aforementioned resin film. [Means for Solving the Problem]

本發明採用以下構成。 [1].一種保護膜形成用片,係具備支撐片、及設置於前述支撐片的一面上之硬化性樹脂膜;並且,前述硬化性樹脂膜為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述晶圓的前述面形成保護膜;前述支撐片於前述一面中,具有設有前述硬化性樹脂膜之第一區域、及包圍前述第一區域且未設有前述硬化性樹脂膜之第二區域。 The present invention comprises the following: [1]. A protective film forming sheet comprising a support sheet and a curable resin film disposed on one side of the support sheet; wherein the curable resin film is used to adhere to and cure the surface of a wafer having protruding electrodes, thereby forming a protective film on the aforementioned surface of the wafer; the support sheet has, on the aforementioned side, a first region having the aforementioned curable resin film and a second region surrounding the first region but not having the aforementioned curable resin film.

[2].如[1]所記載之保護膜形成用片,其中以溫度90℃、頻率1Hz之條件使直徑25mm、厚度1mm之前述硬化性樹脂膜之試片產生應變,測定前述試片之儲存彈性模數,於將前述試片之應變為1%時的前述試片之儲存彈性模數設為Gc1,將前述試片之應變為300%時的前述試片之儲存彈性模數設為Gc300時,藉由下述式:X=Gc1/Gc300所算出之X值為19以上至未達10000。 [3].如[1]或[2]所記載之保護膜形成用片,其中前述硬化性樹脂膜之厚度為25μm以上。 [4].如[1]至[3]中任一項所記載之保護膜形成用片,其中前述硬化性樹脂膜之寬度之最大值為140mm至150mm、190mm至200mm、290mm至300mm或者440mm至450mm。 [2]. The protective film forming sheet as described in [1], wherein a specimen of the aforementioned curable resin film with a diameter of 25 mm and a thickness of 1 mm is strained under conditions of 90°C and 1 Hz, and the storage elastic modulus of the specimen is measured, wherein the storage elastic modulus of the specimen when the strain of the specimen is 1% is set as Gc1, and the storage elastic modulus of the specimen when the strain of the specimen is 300% is set as Gc300, and the value of X calculated by the following formula: X = Gc1/Gc300 is 19 or more and less than 10000. [3]. The protective film forming sheet as described in [1] or [2], wherein the thickness of the aforementioned curable resin film is 25 μm or more. [4]. A protective film forming sheet as described in any of [1] to [3], wherein the maximum width of the aforementioned curable resin film is 140 mm to 150 mm, 190 mm to 200 mm, 290 mm to 300 mm, or 440 mm to 450 mm.

[5].如[1]至[4]中任一項所記載之保護膜形成用片,其中前述支撐片為圓形。 [6].如[5]所記載之保護膜形成用片,其中前述支撐片為黏著片,或者沿著前述支撐片之外周部具有治具用接著劑層。 [7].如[1]至[4]中任一項所記載之保護膜形成用片,其中前述支撐片為剝離膜。 [8].如[1]至[7]中任一項所記載之保護膜形成用片,其中於前述晶圓的前述面形成有成為前述晶圓的分割部位之溝槽。 [5]. A protective film forming sheet as described in any of [1] to [4], wherein the aforementioned support sheet is circular. [6]. A protective film forming sheet as described in [5], wherein the aforementioned support sheet is an adhesive sheet, or has a jig adhesive layer along its outer periphery. [7]. A protective film forming sheet as described in any of [1] to [4], wherein the aforementioned support sheet is a peeling film. [8]. A protective film forming sheet as described in any of [1] to [7], wherein a groove is formed on the aforementioned surface of the aforementioned wafer to form a dicing portion of the aforementioned wafer.

[9].一種具保護膜之晶片的製造方法,係具有:貼附步驟,一邊將如[1]至[8]中任一項所記載之保護膜形成用片中的前述硬化性樹脂膜加熱,一邊貼附於晶圓的具有突起狀電極之面;硬化步驟,使貼附後之前述硬化性樹脂膜硬化,藉此於前述晶圓的前述面形成保護膜;以及加工步驟,將形成前述保護膜後之前述晶圓分割,切斷前述保護膜,藉此獲得具保護膜之晶片,該具保護膜之晶片具備晶片、及設置於前述晶片之切斷後之前述保護膜。 [10].如[9]所記載之具保護膜之晶片的製造方法,其中作為前述晶圓,使用前述面之俯視時之面積相對於前述硬化性樹脂膜的朝向前述晶圓之貼附面之面積為同等以上的晶圓;於前述貼附步驟中,將前述硬化性樹脂膜的前述貼附面之整個面貼附於前述晶圓的前述面。 [9]. A method for manufacturing a wafer with a protective film comprises: an attachment step, wherein a curable resin film in a protective film forming wafer as described in any one of [1] to [8] is heated and attached to a surface of a wafer having protruding electrodes; a curing step, wherein the attached curable resin film is cured, thereby forming a protective film on the aforementioned surface of the wafer; and a processing step, wherein the wafer after the formation of the protective film is diced, and the protective film is cut, thereby obtaining a wafer with a protective film, the wafer having a protective film comprising a wafer and the aforementioned protective film disposed on the diced wafer. [10]. A method for manufacturing a wafer with a protective film as described in [9], wherein the wafer used is a wafer whose area when viewed from above is equal to or greater than the area of the surface of the curable resin film facing the wafer; in the aforementioned attachment step, the entire surface of the surface of the curable resin film is attached to the aforementioned surface of the wafer.

[11].如[9]或[10]所記載之具保護膜之晶片的製造方法,其中於前述晶圓的前述面,形成有成為前述晶圓的分割部位之溝槽,於前述貼附步驟中,於朝向前述晶圓的前述面貼附前述硬化性樹脂膜時,將前述硬化性樹脂膜填充於前述溝槽。 [12].如[9]至[11]中任一項所記載之具保護膜之晶片的製造方法,其中於前述貼附步驟中,使用輥將前述硬化性樹脂膜貼附於前述晶圓的前述面。 [13].一種積層物,係藉由下述方式獲得:於剝離膜的剝離處理面形成熱硬化性樹脂膜,將前述熱硬化性樹脂膜與前述剝離膜一併加工為圓形,將與具備前述剝離膜之側為相反側的面之整個面與帶狀之背面研磨帶的表面貼合。 [14].一種積層物,係具備:剝離膜;設置於前述剝離膜的一個剝離處理面的熱硬化性樹脂膜;以及背面研磨帶,設置於前述熱硬化性樹脂膜中的與前述剝離膜側為相反側之面;並且,前述剝離膜之平面形狀與前述熱硬化性樹脂膜之平面形狀均為圓形;前述剝離膜與前述熱硬化性樹脂膜於這些膜之徑向上,外周部之位置相互一致地配置;前述背面研磨帶為帶狀。 [發明功效] [11]. A method for manufacturing a wafer with a protective film as described in [9] or [10], wherein a groove is formed on the aforementioned surface of the wafer to form a dicing portion of the wafer, and in the aforementioned attachment step, when the aforementioned curable resin film is attached to the aforementioned surface facing the wafer, the aforementioned curable resin film is filled into the aforementioned groove. [12]. A method for manufacturing a wafer with a protective film as described in any one of [9] to [11], wherein in the aforementioned attachment step, a roller is used to attach the aforementioned curable resin film to the aforementioned surface of the wafer. [13]. A deposit is obtained by forming a thermosetting resin film on the peeling surface of a peeling membrane, processing the thermosetting resin film and the peeling membrane together into a circular shape, and bonding the entire surface of the surface opposite to the side having the peeling membrane to the surface of a strip-shaped back abrasive belt. [14]. A laminate comprising: a peeling membrane; a thermosetting resin film disposed on a peeling treatment surface of the peeling membrane; and a back abrasive belt disposed on a surface of the thermosetting resin film opposite to the peeling membrane side; wherein the planar shape of the peeling membrane and the planar shape of the thermosetting resin film are both circular; the peeling membrane and the thermosetting resin film are arranged symmetrically at their outer peripheries in the radial direction; and the back abrasive belt is strip-shaped. [Invention Benefits]

圖1為用於示意性地說明本發明所欲解決之課題的剖面圖。於硬化性樹脂膜62的未貼附於晶圓9之區域中之周緣部附近之區域622,通常存在溫度較硬化性樹脂膜62的貼附於晶圓9之區域621、及未貼附於晶圓9之晶圓9的附近之區域620更低的區域。這是由於如以下的理由所造成。亦即,硬化性樹脂膜62的貼附於晶圓9之區域621例如通常如後述般,以經加熱之晶圓9作為加熱源而受到加熱,於前述區域621與前述區域620中,該熱容易傳遞而溫度上升,相對於此,熱不易傳遞至遠離晶圓9的前述周緣部附近之區域622。從而,硬化性樹脂膜62於貼附於晶圓9之區域621、及未貼附於晶圓9之晶圓9的附近之區域620中容易流動,相對於此,於硬化性樹脂膜62之溫度低的周緣部附近之區域622中,流動性低,堵住流動而來之硬化性樹脂膜62。因此,如上文所說明,於硬化性樹脂膜62的未貼附於晶圓9之區域、尤其是晶圓9的附近之區域620相較於貼附於晶圓9之區域621,硬化性樹脂膜厚度增厚之現象變得明顯。Figure 1 is a cross-sectional view schematically illustrating the problem that the present invention seeks to solve. In the region 622 near the periphery of the area where the cured resin film 62 is not attached to the wafer 9, there is typically a region with a lower temperature than the region 621 where the cured resin film 62 is attached to the wafer 9 and the region 620 near the wafer 9 where it is not attached. This is due to the following reason: the region 621 where the cured resin film 62 is attached to the wafer 9 is heated, for example, as described later, using the heated wafer 9 as a heat source. In the aforementioned regions 621 and 620, heat is easily transferred and the temperature rises. In contrast, heat is not easily transferred to the region 622, which is far from the aforementioned periphery of the wafer 9. Consequently, the cured resin film 62 flows easily in the area 621 attached to wafer 9 and in the area 620 near wafer 9 where it is not attached. In contrast, the flowability is low in the area 622 near the periphery where the temperature of the cured resin film 62 is low, thus blocking the flow of the cured resin film 62. Therefore, as explained above, the phenomenon that the cured resin film thickness is increased in the area 620 where it is not attached to wafer 9, especially in the area 620 near wafer 9, compared to the area 621 where it is attached to wafer 9 becomes more obvious.

相對於此,藉由使用本發明之保護膜形成用片,能夠於將前述保護膜形成用片中的硬化性樹脂膜貼附於晶圓的具有突起狀電極之面時,使硬化性樹脂膜的未貼附於晶圓之區域變窄或消失,能夠減少流動的硬化性樹脂膜之量,故而能夠抑制形成硬化性樹脂膜的厚度增厚之區域。進而,於上述硬化性樹脂膜的周緣部附近之區域中,不存在成為低溫之區域,因而能夠更高度地抑制形成硬化性樹脂膜的厚度增厚之區域。In contrast, by using the protective film forming sheet of this invention, when the curable resin film in the aforementioned protective film forming sheet is attached to the surface of the wafer with protruding electrodes, the area of the curable resin film not attached to the wafer is narrowed or disappears, thereby reducing the amount of flowing curable resin film and thus suppressing the formation of areas where the curable resin film thickness increases. Furthermore, in the area near the periphery of the aforementioned curable resin film, there is no area that becomes cold, thus further suppressing the formation of areas where the curable resin film thickness increases.

根據本發明之具保護膜之晶片的製造方法,藉由使用此種保護膜形成用片製造具保護膜之晶片,而能夠抑制晶圓之側面、或具保護膜之晶片的製造裝置的任一部位因硬化性樹脂膜之多餘部位之附著而被污染。According to the present invention, by using such a protective film forming wafer to manufacture a protective film chip, it is possible to prevent contamination of the side of the wafer or any part of the protective film chip manufacturing apparatus due to the adhesion of excess parts of the hardened resin film.

[保護膜形成用片] 本發明之一實施形態之保護膜形成用片係具備:支撐片;以及設置於前述支撐片的一面上的硬化性樹脂膜;並且,前述硬化性樹脂膜為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述晶圓的前述面形成保護膜;前述支撐片於前述一面中,具有設有前述硬化性樹脂膜之第一區域、及包圍前述第一區域且未設有前述硬化性樹脂膜之第二區域。 本實施形態之保護膜形成用片於前述支撐片中具有前述第一區域及第二區域,藉此於將前述保護膜形成用片中的前述硬化性樹脂膜貼附於晶圓的具有突起狀電極之面時,能夠抑制硬化性樹脂膜未貼附於晶圓且形成厚度增厚之區域。 以下,一邊參照圖式,一邊對本實施形態之保護膜形成用片進行說明。 [Protective Film Forming Sheet] One embodiment of the present invention provides a protective film forming sheet comprising: a support sheet; and a curable resin film disposed on one side of the support sheet; wherein the curable resin film is used to adhere to and cure the surface of a wafer having protruding electrodes, thereby forming a protective film on the aforementioned surface of the wafer; the support sheet has, on the aforementioned side, a first region having the aforementioned curable resin film and a second region surrounding the first region but not having the aforementioned curable resin film. The protective film forming sheet of this embodiment has the aforementioned first and second regions in the support sheet, thereby preventing areas where the cured resin film in the protective film forming sheet fails to adhere to the wafer and forms thickened areas when the cured resin film is attached to the surface of the wafer with protruding electrodes. Hereinafter, the protective film forming sheet of this embodiment will be described with reference to the drawings.

圖2為示意性地表示本實施形態之保護膜形成用片之一例的平面圖,圖3為圖2所示之保護膜形成用片之於I-I線之剖面圖。 以下之說明中所用之圖有時為了容易地理解本發明之特徵,為方便起見而將成為主要部位之部分放大表示,各構成要素之尺寸比率等未必與實際相同。 圖3以後之圖中,對於已說明之圖所示相同之構成要素標注與該已說明之圖之情形相同的符號,省略詳細說明。 Figure 2 is a plan view schematically illustrating an example of a protective film forming sheet according to this embodiment, and Figure 3 is a cross-sectional view of the protective film forming sheet shown in Figure 2 along line I-I. In the following description, for ease of understanding of the features of the invention, some parts that are considered key components are sometimes enlarged for convenience, and the dimensional ratios of the constituent elements may not be the same as in the actual figures. In the figures following Figure 3, for constituent elements whose labels are the same as those in the previously described figures, detailed explanations are omitted.

此處所示之保護膜形成用片1具備:支撐片11;以及設置於支撐片11的一面11a上的硬化性樹脂膜12。 支撐片11在該一面11a、亦即硬化性樹脂膜12側之面中,具有設有硬化性樹脂膜12之第一區域111a、及包圍第一區域111a且未設有硬化性樹脂膜12之第二區域112a。亦即,支撐片11中,第一區域111a之整個區域由硬化性樹脂膜12被覆,第二區域112a之整個區域未由硬化性樹脂膜12被覆。 The protective film forming sheet 1 shown here comprises: a support sheet 11; and a curable resin film 12 disposed on one side 11a of the support sheet 11. The support sheet 11 has a first region 111a on the side 11a, i.e., the side facing the curable resin film 12, where the curable resin film 12 is disposed, and a second region 112a surrounding the first region 111a but not covered by the curable resin film 12. That is, the entire area of the first region 111a in the support sheet 11 is covered by the curable resin film 12, while the entire area of the second region 112a is not covered by the curable resin film 12.

支撐片11的一面11a中之第二區域112a較佳為露出(為露出面)。The second region 112a of one side 11a of the support piece 11 is preferably exposed (the exposed side).

硬化性樹脂膜12為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於晶圓的具有突起狀電極之面形成保護膜。 本說明書中,作為「晶圓」,可列舉:由矽、鍺、硒等元素半導體或GaAs、GaP、InP、CdTe、ZnSe、SiC等化合物半導體所構成之半導體晶圓;由藍寶石、玻璃等絕緣體所構成之絕緣體晶圓。 The curable resin film 12 is used to adhere to and cure the surface of the wafer with protruding electrodes, thereby forming a protective film on the surface of the wafer with protruding electrodes. In this specification, "wafer" may include: semiconductor wafers composed of elemental semiconductors such as silicon, germanium, and selenium, or compound semiconductors such as GaAs, GaP, InP, CdTe, ZnSe, and SiC; and insulating wafers composed of insulators such as sapphire and glass.

於這些晶圓的一面上形成有電路,本說明書中,將如此形成有電路之側的晶圓之面稱為「電路面」。而且,將晶圓中的與電路面為相反側之面稱為「內面」。晶圓的具有突起狀電極之面與電路面為相同含意。 晶圓係藉由切割等方法進行分割而成為晶片。本說明書中,與晶圓之情形同樣地,將形成有電路之側的晶片之面稱為「電路面」,將晶片中的與電路面為相反側之面稱為「內面」。 於晶圓的電路面及晶片之電路面,均設有凸塊、柱等突起狀電極。突起狀電極較佳為由焊料構成。 Electrical circuits are formed on one side of these wafers. In this specification, this side of the wafer with the electrical circuits is referred to as the "electrical surface." The side of the wafer opposite to the electrical surface is referred to as the "inner surface." The side of the wafer with protruding electrodes has the same meaning as the electrical surface. Wafers are diced into chips using methods such as dicing. In this specification, similarly to the case of wafers, the side of the chip with the electrical circuits is referred to as the "electrical surface," and the side of the chip opposite to the electrical surface is referred to as the "inner surface." Bolts, pillars, or other protruding electrodes are provided on both the electrical surface of the wafer and the electrical surface of the chip. These protruding electrodes are preferably made of solder.

支撐片11支撐硬化性樹脂膜12。作為支撐片11,更具體而言,例如可列舉:僅由具有此種支撐功能之基材構成者;剝離膜;能夠於晶圓之內面研削時貼附於晶圓而使用之黏著片等。前述黏著片亦可於該周緣部中貼附環形框架等治具。另外,藉由支撐片11為前述剝離膜,有時如後述般保護膜形成用片的製造變容易。The support sheet 11 supports the hardened resin film 12. More specifically, the support sheet 11 can be, for example, composed solely of a substrate having this supporting function; a release film; or an adhesive sheet that can be attached to the wafer during grinding on the inner surface of the wafer. The aforementioned adhesive sheet can also have a jig such as a ring frame attached to its periphery. Furthermore, by using the support sheet 11 as the aforementioned release film, the manufacture of the protective film forming sheet, as described later, is sometimes easier.

支撐片11之平面形狀、亦即前述一面11a之形狀為圓形。例如,於支撐片11為黏著片之情形時,或者如後述般沿著該外周部具有治具用接著劑層之情形時,尤佳為像這樣支撐片11之平面形狀為圓形。原因在於:此種支撐片11之平面形狀通常為與圓環狀之環形框架等治具的內周一致的形狀,無需於貼附於環形框架等治具後將支撐片11切斷。The planar shape of the support piece 11, that is, the shape of the aforementioned surface 11a, is circular. For example, when the support piece 11 is an adhesive piece, or when it has a layer of adhesive for the jig along its outer periphery as described later, it is particularly preferable that the planar shape of the support piece 11 is circular. The reason is that the planar shape of this support piece 11 is usually consistent with the inner periphery of the jig such as the annular frame, so it is not necessary to cut the support piece 11 after it is attached to the jig such as the annular frame.

硬化性樹脂膜12之平面形狀、亦即與支撐片11側為相反側之面12a之形狀為圓形。再者,於晶圓為了進行結晶方位之辨識或對準而有時設有定向平面或缺口,有時晶圓之形狀並非完全之圓形,硬化性樹脂膜12亦可設為與該形狀一致之平面形狀。The planar shape of the hardened resin film 12, that is, the shape of the side 12a opposite to the side of the support sheet 11, is circular. Furthermore, sometimes an orientation plane or notch is provided on the wafer for the purpose of identifying or aligning the crystal orientation. Sometimes the shape of the wafer is not perfectly circular, and the hardened resin film 12 can also be set to a planar shape consistent with that shape.

於對保護膜形成用片1自該硬化性樹脂膜12側之上方朝下看而俯視時,支撐片11與硬化性樹脂膜12係這些之中心位置一致,配置成同心狀。 支撐片11之寬度之最大值、亦即直徑D 11大於硬化性樹脂膜12之寬度之最大值、亦即直徑D 12When the protective film forming sheet 1 is viewed from above and downwards from the side of the curing resin film 12, the support sheet 11 and the curing resin film 12 are aligned at their centers and arranged concentrically. The maximum width of the support sheet 11, i.e., its diameter D 11, is greater than the maximum width of the curing resin film 12, i.e., its diameter D 12 .

支撐片11之第一區域111a之平面形狀及大小與硬化性樹脂膜12之平面形狀及大小相同,為直徑D 12之圓形。 支撐片11之第二區域112a之平面形狀係寬度為(D 11-D 12)/2之圓環。 The planar shape and size of the first region 111a of the support sheet 11 are the same as those of the hardened resin film 12, and are circles with a diameter of D 12. The planar shape of the second region 112a of the support sheet 11 is an annulus with a width of (D 11 - D 12 )/2.

相對於作為硬化性樹脂膜12之貼附對象之晶圓的內面之面積(晶圓的具有突起狀電極之面之俯視時之面積),硬化性樹脂膜12中的與支撐片11側為相反側之面12a之面積(支撐片11之第一區域111a之面積)較佳為同等以下。藉由選擇此種硬化性樹脂膜12,而於將保護膜形成用片1中的硬化性樹脂膜12貼附於晶圓的具有突起狀電極之面時,能夠進一步減少硬化性樹脂膜12向支撐片11的第二區域112a上之溢出量,結果能夠進一步抑制硬化性樹脂膜12未貼附於晶圓且形成厚度增厚之區域。The area of the inner surface of the wafer to which the curable resin film 12 is attached (the area of the wafer with protruding electrodes when viewed from above) is preferably equal to or less than the area of the surface 12a of the curable resin film 12 opposite to the side of the support sheet 11 (the area of the first region 111a of the support sheet 11). By selecting this type of curable resin film 12, when the curable resin film 12 in the protective film forming sheet 1 is attached to the surface of the wafer with protruding electrodes, the amount of curable resin film 12 overflowing onto the second region 112a of the support sheet 11 can be further reduced. As a result, the areas where the curable resin film 12 is not attached to the wafer and forms a thickened area can be further suppressed.

相對於作為硬化性樹脂膜12之貼附對象之晶圓的最大徑(例如直徑),硬化性樹脂膜12之寬度之最大值(直徑)D 12較佳為同等以下。 作為平面形狀為圓形之晶圓,例如有直徑為6吋、8吋、12吋及18吋之晶圓。作為以這些任一晶圓為貼附對象的較佳之硬化性樹脂膜12,例如可列舉該寬度之最大值(直徑)D 12為140mm至150mm、190mm至200mm、290mm至300mm或者440mm至450mm之硬化性樹脂膜。 The maximum width (diameter) D 12 of the curable resin film 12 is preferably equal to or less than the maximum diameter (e.g., diameter) of the wafer to which the curable resin film 12 is attached. For example, wafers with a planar circular shape may have diameters of 6 inches, 8 inches, 12 inches, and 18 inches. Preferred curable resin films 12 for attaching to any of these wafers may have a maximum width (diameter) D 12 of 140 mm to 150 mm, 190 mm to 200 mm, 290 mm to 300 mm, or 440 mm to 450 mm.

於支撐片11的前述一面11a中,前述第二區域112a之寬度((D 11-D 12)/2)相對於前述第一區域111a之寬度之最大值(D 12)較佳為0.05倍至0.4倍,更佳為0.07倍至0.3倍。藉由第二區域112a之寬度為前述下限值以上,而於支撐片11為黏著片之情形、或者具有前述治具用接著劑層之情形時,於將支撐片11貼附於環形框架等治具時,能夠減少硬化性樹脂膜12接觸前述治具之可能性。藉由第二區域112a之寬度為前述上限值以下,則能夠抑制前述第二區域112a之面積變得過於寬廣。 In the aforementioned surface 11a of the support piece 11, the width of the second region 112a ((D 11 - D 12 )/2) is preferably 0.05 to 0.4 times, more preferably 0.07 to 0.3 times, relative to the maximum width (D 12 ) of the first region 111a. By having the width of the second region 112a at or above the aforementioned lower limit, when the support piece 11 is an adhesive sheet or has the aforementioned adhesive layer for fixtures, the possibility of the hardened resin film 12 contacting the fixture can be reduced when the support piece 11 is attached to a fixture such as a ring frame. By limiting the width of the second region 112a to below the aforementioned upper limit, it is possible to prevent the area of the second region 112a from becoming too wide.

於作為硬化性樹脂膜12之貼附對象之晶圓的具有前述突起狀電極之面,亦可形成有於將晶圓加以分割而單片化為晶片時成為晶圓的分割部位之溝槽。亦即,硬化性樹脂膜12亦可為用以貼附於晶圓的具有突起狀電極且進而形成有成為前述晶圓的分割部位之溝槽的前述面並進行硬化,藉此於前述晶圓的前述面形成保護膜之樹脂膜。 前述溝槽係以與目標晶片之大小及形狀對應的形態形成於晶圓的具有突起狀電極之面。 On the surface of the wafer to which the curable resin film 12 is attached, where the protruding electrodes are located, grooves can also be formed that form the wafer's dicing portions when the wafer is sliced and monolithically assembled into chips. That is, the curable resin film 12 can also be a resin film used to attach to the surface of the wafer with protruding electrodes and thus forming the grooves that constitute the wafer's dicing portions, and then cured to form a protective film on the aforementioned surface of the wafer. The aforementioned grooves are formed on the surface of the wafer with protruding electrodes in a shape corresponding to the size and shape of the target chip.

例如,藉由將於具有前述突起狀電極之面形成有前述溝槽之晶圓中的與前述面為相反側之面(內面)研削至前述溝槽出現為止,而獲得於前述溝槽之部位經分割之晶片。此時,藉由貼附硬化性樹脂膜12,前述溝槽會被硬化性樹脂膜12所填充,其結果,若成為被硬化性樹脂膜12之硬化物、亦即保護膜所填充之狀態,則在獲得前述晶片之後,藉由將前述晶片間之前述保護膜切斷,可獲得如下形式之具保護膜之晶片:前述晶片不僅於具有前述突起狀電極之面具備保護膜,且於四個側面亦具備保護膜。如此側面亦經保護之晶片可獲得由保護膜所得之更高保護效果。For example, by grinding the inner surface (opposite side) of a wafer with the aforementioned grooves formed on the surface having the aforementioned protruding electrodes until the aforementioned grooves appear, a wafer segmented at the aforementioned groove location is obtained. At this time, by attaching a hardening resin film 12, the aforementioned grooves are filled by the hardening resin film 12. As a result, if it becomes a state filled with the hardened material of the hardening resin film 12, that is, a protective film, after obtaining the aforementioned wafer, by cutting the aforementioned protective film between the aforementioned wafers, a wafer with a protective film can be obtained in the following form: the aforementioned wafer not only has a protective film on the surface having the aforementioned protruding electrodes, but also has a protective film on all four sides. Chips that are protected on the sides can obtain a higher level of protection from the protective film.

支撐片11及硬化性樹脂膜12分別可由一層(單層)構成,亦可由兩層以上之多層構成。於支撐片11或硬化性樹脂膜12由多層構成之情形時,這些多層可相互相同亦可不同,這些多層之組合並無特別限定。The support sheet 11 and the cured resin film 12 may each be composed of a single layer (monolayer) or multiple layers (two or more layers). When the support sheet 11 or the cured resin film 12 is composed of multiple layers, these multiple layers may be the same or different from each other, and there is no particular limitation on the combination of these multiple layers.

本說明書中,不限於支撐片11及硬化性樹脂膜12之情形,所謂「多層可相互相同亦可不同」,意指「可使所有的層相同,亦可使所有的層不同,亦可僅使一部分層相同」,進而所謂「多層互不相同」,意指「各層之構成材料及厚度之至少一者互不相同」。In this specification, not limited to the case of support sheet 11 and hardened resin film 12, the phrase "multiple layers may be the same or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be the same". Furthermore, the phrase "multiple layers are different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

硬化性樹脂膜12之厚度T 12並無特別限定,較佳為10μm以上,更佳為20μm以上,進而較佳為25μm以上。藉由T 12像這樣為一定值以上,而於在晶圓的具有突起狀電極且形成有前述溝槽之面貼附硬化性樹脂膜12時,能夠利用硬化性樹脂膜12更高程度無間隙地填充前述溝槽。另外,能夠更高程度無間隙地被覆晶圓的突起狀電極之電路面附近之基部。亦即,硬化性樹脂膜12於填充前述溝槽之方面、及被覆突起狀電極之基部之方面更有利。 The thickness T 12 of the curable resin film 12 is not particularly limited, but is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 25 μm or more. By having T 12 at or above this value, when the curable resin film 12 is attached to the surface of the wafer with protruding electrodes and the aforementioned grooves, the curable resin film 12 can fill the aforementioned grooves with a higher degree of seamlessness. In addition, it can cover the base near the electrical surface of the protruding electrodes of the wafer with a higher degree of seamlessness. That is, the curable resin film 12 is more advantageous in terms of filling the aforementioned grooves and covering the base of the protruding electrodes.

硬化性樹脂膜12之厚度T 12之上限值並無特別限定。例如,就避免硬化性樹脂膜12之厚度變得過厚之方面而言,T 12較佳為200μm以下,更佳為130μm以下,進而較佳為80μm以下。 There is no particular upper limit to the thickness T 12 of the cured resin film 12. For example, in order to avoid the thickness of the cured resin film 12 becoming too thick, T 12 is preferably 200 μm or less, more preferably 130 μm or less, and even more preferably 80 μm or less.

本說明書中,所謂「硬化性樹脂膜之厚度」,意指硬化性樹脂膜整體之厚度,例如所謂由多層構成之硬化性樹脂膜之厚度,意指構成硬化性樹脂膜之所有層之合計厚度。In this manual, the term "thickness of the curing resin film" refers to the overall thickness of the curing resin film. For example, the term "thickness of a multi-layered curing resin film" refers to the total thickness of all the layers that make up the curing resin film.

保護膜形成用片1中,以溫度90℃、頻率1Hz之條件使直徑25mm、厚度1mm之硬化性樹脂膜12之試片產生應變,測定前述試片之儲存彈性模數,於將前述試片之應變為1%時的前述試片之儲存彈性模數設為Gc1,將前述試片之應變為300%時的前述試片之儲存彈性模數設為Gc300時,藉由下述式:X=Gc1/Gc300所算出之X值較佳為19以上至未達10000。此種硬化性樹脂膜12係軟質,適合用於對晶圓的具有突起狀電極之面及具有前述溝槽之晶圓般具有凹凸面之貼附對象物進行貼附。In the protective film forming sheet 1, a test piece of a curable resin film 12 with a diameter of 25 mm and a thickness of 1 mm is strained at a temperature of 90°C and a frequency of 1 Hz. The storage elastic modulus of the test piece is measured. When the storage elastic modulus of the test piece with a strain of 1% is set as Gc1, and the storage elastic modulus of the test piece with a strain of 300% is set as Gc300, the value of X calculated by the following formula: X=Gc1/Gc300 is preferably 19 or more and less than 10000. This curable resin film 12 is soft and suitable for attaching to objects with uneven surfaces, such as wafers with protruding electrodes and wafers with the aforementioned grooves.

前述試片為膜狀,該試片的平面形狀為圓形。 前述試片亦可為厚度1mm之單層之硬化性樹脂膜12,但就容易製作之方面而言,較佳為將厚度未達1mm之單層之硬化性樹脂膜12積層多片而構成之積層膜。 構成前述積層膜之多片單層之硬化性樹脂膜12之厚度可全部相同,或亦可全部不同,或亦可僅一部分相同,就容易製作之方面而言,較佳為全部相同。 The aforementioned test piece is in the form of a film, and its planar shape is circular. The aforementioned test piece can also be a single-layer curable resin film 12 with a thickness of 1 mm, but for ease of manufacture, it is preferable to form a laminated film by stacking multiple single-layer curable resin films 12 with a thickness of less than 1 mm. The thicknesses of the multiple single-layer curable resin films 12 constituting the aforementioned laminated film can all be the same, or all be different, or only some can be the same; for ease of manufacture, it is preferable that they are all the same.

於本說明書中,不限於前述Gc1及Gc300,所謂「試片之儲存彈性模數」,意指「以溫度90℃、頻率1Hz之條件使直徑25mm、厚度1mm之硬化性樹脂膜之試片產生應變時的與該應變對應的試片之儲存彈性模數」。In this specification, not limited to the aforementioned Gc1 and Gc300, the term "storage elastic modulus of the test piece" means "the storage elastic modulus of the test piece corresponding to the strain when a test piece of a hardened resin film with a diameter of 25 mm and a thickness of 1 mm is subjected to strain at a temperature of 90°C and a frequency of 1 Hz".

於將硬化性樹脂膜12貼附於晶圓的具有突起狀電極之面時,突起狀電極的上部貫穿硬化性樹脂膜12而突出。而且,硬化性樹脂膜12以覆蓋突起狀電極之方式於突起狀電極間擴展,與晶圓的具有突起狀電極之面密接,並且覆蓋突起狀電極的表面、尤其是晶圓的具有突起狀電極之面之附近部位之表面,填埋突起狀電極之基部。於該狀態下,於以突起狀電極的頭頂部為首之上部,硬化性樹脂膜12之殘存得到抑制。因此,作為硬化性樹脂膜12之硬化物之保護膜12’於突起狀電極的上部之附著亦當然得到抑制。進而,在前述面形成有前述溝槽之情形時,於硬化性樹脂膜12開始滲入至前述溝槽之中間階段、與硬化性樹脂膜12被覆突起狀電極之基部而硬化性樹脂膜12充分填充前述溝槽之最後階段中,硬化性樹脂膜12之應變程度大幅度地不同。更具體而言,前述中間階段中之硬化性樹脂膜12之應變大,前述最後階段中之硬化性樹脂膜12之應變小。 硬化性樹脂膜12採用Gc1作為該應變小時之儲存彈性模數,採用Gc300作為該應變大時之儲存彈性模數,以Gc1變高且Gc300變低之方式將X值(=Gc1/Gc300)規定為19以上至未達10000,藉此發揮上文所說明之優異效果。 When the curable resin film 12 is attached to the surface of the wafer with protruding electrodes, the upper part of the protruding electrodes protrudes through the curable resin film 12. Furthermore, the curable resin film 12 expands between the protruding electrodes in a manner that covers them, making close contact with the surface of the wafer with protruding electrodes, and covering the surface of the protruding electrodes, especially the surface near the surface of the wafer with protruding electrodes, thus filling in the base of the protruding electrodes. In this state, the residue of the curable resin film 12 is suppressed, starting from the top of the protruding electrodes. Therefore, the adhesion of the protective film 12', which is the hardened component of the hardened resin film 12, to the upper part of the protruding electrode is naturally suppressed. Furthermore, when the aforementioned groove is formed on the aforementioned surface, the degree of strain of the hardened resin film 12 differs significantly between the intermediate stage where the hardened resin film 12 begins to penetrate into the aforementioned groove and the final stage where the hardened resin film 12 covers the base of the protruding electrode and fully fills the aforementioned groove. More specifically, the strain of the hardened resin film 12 is greater in the aforementioned intermediate stage and less in the aforementioned final stage. The hardened resin film 12 uses Gc1 as the storage elastic modulus when the strain is small and Gc300 as the storage elastic modulus when the strain is large. The X value (=Gc1/Gc300) is specified to be above 19 but below 10000, with Gc1 increasing and Gc300 decreasing, thereby achieving the excellent effects described above.

於硬化性樹脂膜12將突起狀電極的基部被覆之效果變得更高之方面而言,X值較佳為5000以下,更佳為2000以下,進而較佳為1000以下,尤佳為500以下,例如亦可為300以下、100以下及70以下之任一者。 就抑制硬化性樹脂膜12殘存於突起狀電極的上部之效果及硬化性樹脂膜12充分填充前述溝槽之效果變得更高之方面而言,X值較佳為25以上,更佳為30以上,進而較佳為40以上,尤佳為50以上,例如亦可為60以上。 Regarding improving the effect of the cured resin film 12 in coating the base of the protruding electrode, the X value is preferably 5000 or less, more preferably 2000 or less, further preferably 1000 or less, and especially preferably 500 or less; for example, it can also be any of 300 or less, 100 or less, and 70 or less. Regarding improving the effect of suppressing the presence of the cured resin film 12 on the upper part of the protruding electrode and improving the effect of the cured resin film 12 in fully filling the aforementioned groove, the X value is preferably 25 or more, more preferably 30 or more, further preferably 40 or more, and especially preferably 50 or more; for example, it can also be 60 or more.

硬化性樹脂膜12中,Gc1只要X值為19以上至未達10000,則並無特別限定。 其中,就容易增大X值之方面而言,Gc1較佳為1×10 4Pa至1×10 6Pa,更佳為3×10 4Pa至7×10 5Pa,進而較佳為5×10 4Pa至5×10 5Pa。 In the hardened resin film 12, there is no particular limitation on the Gc1 value as long as it is 19 or higher but not exceeding 10,000. In terms of ease of increasing the X value, the Gc1 is preferably 1× 10⁴ Pa to 1× 10⁶ Pa, more preferably 3× 10⁴ Pa to 7× 10⁵ Pa, and even more preferably 5× 10⁴ Pa to 5× 10⁵ Pa.

硬化性樹脂膜12中,Gc300只要X值為19以上至未達10000,則並無特別限定。 其中,就硬化性樹脂膜12充分填充前述溝槽之效果變得更高之方面而言,Gc300較佳為未達15000Pa,更佳為10000Pa以下,進而較佳為5000Pa以下,尤佳為4000Pa以下,例如亦可為3500Pa以下。 就硬化性樹脂膜12將突起狀電極的基部被覆之效果變得更高之方面而言,Gc300較佳為100Pa以上,更佳為500Pa以上,進而較佳為1000Pa以上。 In the cured resin film 12, there is no particular limitation on the Gc300 as long as the X value is 19 or higher but less than 10000. Regarding improving the effect of the cured resin film 12 in fully filling the aforementioned grooves, the Gc300 is preferably less than 15000 Pa, more preferably less than 10000 Pa, further preferably less than 5000 Pa, especially preferably less than 4000 Pa, and for example, less than 3500 Pa. Regarding improving the effect of the cured resin film 12 in covering the base of the protruding electrode, the Gc300 is preferably 100 Pa or higher, more preferably 500 Pa or higher, and further preferably 1000 Pa or higher.

硬化性樹脂膜12中,較佳為Gc1及Gc300均滿足上述任一數值範圍。In the hardened resin film 12, it is preferable that both Gc1 and Gc300 satisfy any of the above value ranges.

硬化性樹脂膜12之儲存彈性模數不限於Gc1及Gc300之情形,例如可藉由調節硬化性樹脂膜12之含有成分及其含量而加以調節。更具體而言,例如藉由使用聚乙烯縮醛作為後述之聚合物成分(A)或不具有能量線硬化性基之聚合物(b)等,而容易將前述Gc300調節為適當之值,將X值調節為適當之值。另外,藉由調節後述之添加劑(I)之種類或含量等,而容易將前述Gc1調節為適當之值,將X值調節為適當之值。另外,藉由使後述之填充材(D)及添加劑(I)之任一者或兩者之含量增大,而容易將Gc1調節為大的值,結果容易將X值調節為大的值。 關於硬化性樹脂膜12之含有成分等,將另外說明。 The storage elastic modulus of the cured resin film 12 is not limited to Gc1 and Gc300. For example, it can be adjusted by adjusting the components and their contents in the cured resin film 12. More specifically, for example, by using polyvinyl acetal as the polymer component (A) described later or a polymer (b) without energy line curing groups, the aforementioned Gc300 can be easily adjusted to an appropriate value, and the X value can be adjusted to an appropriate value. Furthermore, by adjusting the type or content of the additive (I) described later, the aforementioned Gc1 can be easily adjusted to an appropriate value, and the X value can be adjusted to an appropriate value. Additionally, by increasing the content of one or both of the filler (D) and additive (I) described later, the Gc1 can be easily adjusted to a larger value, resulting in a larger X value. The composition of the hardened resin film 12 will be explained separately.

支撐片11之厚度並無特別限定,較佳為50μm至850μm,更佳為75μm至700μm。藉由支撐片11之厚度為前述下限值以上,而支撐片11成為更高強度。藉由支撐片11之厚度為前述上限值以下,而支撐片11之柔軟性提高,操作性進一步提高。The thickness of the support sheet 11 is not particularly limited, but is preferably 50 μm to 850 μm, and more preferably 75 μm to 700 μm. By having a thickness of the support sheet 11 above the aforementioned lower limit, the support sheet 11 achieves higher strength. By having a thickness of the support sheet 11 below the aforementioned upper limit, the flexibility of the support sheet 11 is improved, and its operability is further enhanced.

本說明書中,所謂「支撐片之厚度」,意指支撐片整體之厚度,例如所謂由多層構成之支撐片之厚度,意指構成支撐片之所有層之合計厚度。In this manual, the term "thickness of the support sheet" refers to the overall thickness of the support sheet. For example, the term "thickness of a multi-layered support sheet" refers to the total thickness of all the layers that make up the support sheet.

圖4為示意性地表示本實施形態之保護膜形成用片之另一例的平面圖。 此處所示之保護膜形成用片2具備:支撐片21;以及設置於支撐片21的一面21a上的硬化性樹脂膜12。 Figure 4 is a plan view schematically illustrating another example of a protective film forming sheet according to this embodiment. The protective film forming sheet 2 shown here includes: a support sheet 21; and a hardened resin film 12 disposed on one side 21a of the support sheet 21.

支撐片21為長條帶狀,於該支撐片21之長邊方向,將多片硬化性樹脂膜12配置成一行。支撐片21除了像這樣在俯視時之形狀及大小不同之方面以外,與圖2至圖3所示之保護膜形成用片1中之支撐片11相同。例如,支撐片21之厚度與支撐片11之厚度相同。 而且,保護膜形成用片2除了具備支撐片21代替支撐片11,且硬化性樹脂膜12之個數不同的方面以外,與圖2至圖3所示之保護膜形成用片1相同。 The support sheet 21 is a long strip, and multiple sheets of cured resin film 12 are arranged in a row along its long side. The support sheet 21 is identical to the support sheet 11 in the protective film forming sheet 1 shown in Figures 2 and 3, except for the difference in shape and size when viewed from above. For example, the thickness of the support sheet 21 is the same as that of the support sheet 11. Furthermore, the protective film forming sheet 2 is identical to the protective film forming sheet 1 shown in Figures 2 and 3, except that it has the support sheet 21 instead of the support sheet 11 and the number of cured resin films 12 is different.

保護膜形成用片2適於在多片晶圓的具有突起狀電極之面連續地貼附硬化性樹脂膜12。The protective film forming sheet 2 is suitable for continuously attaching a hardened resin film 12 to the surface of multiple wafers with protruding electrodes.

支撐片21於該一面21a、亦即硬化性樹脂膜12側之面中,具有設有硬化性樹脂膜12之多個第一區域211a、及包圍這些第一區域211a且未設有硬化性樹脂膜12之第二區域212a。亦即,支撐片21中,各個第一區域211a之整個區域由硬化性樹脂膜12被覆,第二區域112a之整個區域未由硬化性樹脂膜12被覆。 支撐片21的一面21a中之第二區域212a較佳為露出(為露出面)。 The support sheet 21, on its side 21a, i.e., the side facing the cured resin film 12, has multiple first regions 211a on which the cured resin film 12 is disposed, and second regions 212a surrounding these first regions 211a but not on which the cured resin film 12 is disposed. That is, in the support sheet 21, the entire area of each first region 211a is covered by the cured resin film 12, while the entire area of the second region 212a is not covered by the cured resin film 12. Preferably, the second regions 212a in one side 21a of the support sheet 21 are exposed (exposed surface).

支撐片21之平面形狀、亦即前述一面21a之形狀為矩形,較佳為帶狀。 於對保護膜形成用片2自該硬化性樹脂膜12側之上方朝下看而俯視時,所有硬化性樹脂膜12於支撐片21上相互等間隔地設置。 保護膜形成用片2中的所有硬化性樹脂膜12之形狀及大小相同。而且,於保護膜形成用片2之寬度方向(相對於長邊方向為正交之方向),所有硬化性樹脂膜12之配置位置相同,與保護膜形成用片2之寬度方向之中間位置一致。 支撐片21之寬度之最大值D 21大於硬化性樹脂膜12之寬度之最大值、亦即直徑D 12。此處,支撐片21之寬度於支撐片21之長邊方向為一定,故而支撐片21之寬度之最大值僅意指支撐片21之寬度。 The planar shape of the support sheet 21, i.e., the shape of the aforementioned surface 21a, is rectangular, preferably strip-shaped. When viewed from above and downwards from the side of the curable resin film 12, all the curable resin films 12 are arranged at equal intervals on the support sheet 21. All the curable resin films 12 in the protective film forming sheet 2 have the same shape and size. Furthermore, in the width direction of the protective film forming sheet 2 (orthogonal to the long side direction), all the curable resin films 12 are positioned in the same way, coinciding with the center position in the width direction of the protective film forming sheet 2. The maximum width D 21 of the support sheet 21 is greater than the maximum width of the curable resin film 12, i.e., the diameter D 12 . Here, the width of the support piece 21 is constant along its long side, so the maximum width of the support piece 21 only refers to the width of the support piece 21.

支撐片21的第一區域211a之平面形狀及大小與硬化性樹脂膜12之平面形狀及大小相同,為直徑D 12之圓形。 支撐片21的第二區域212a之平面形狀為自矩形去掉一行的多個直徑D 12之圓而成的形狀。 The first region 211a of the support sheet 21 has the same planar shape and size as the hardened resin film 12, and is a circle with a diameter of D 12. The second region 212a of the support sheet 21 has a planar shape formed by removing one row from a rectangle and creating multiple circles with a diameter of D 12 .

於支撐片21的前述一面21a中,於將連結第一區域211a的外周部之一點與支撐片21的外周部之一點的線段之最小值設為L 1,將相鄰兩個硬化性樹脂膜12間之距離設為L 2時,L 1與L 2/2中較小之值相對於前述第一區域211a之寬度之最大值(D 12)較佳為0.03倍至0.25倍,更佳為0.05倍至0.2倍。前述值例如只要配合用以於多片晶圓的具有突起狀電極之面連續地貼附硬化性樹脂膜12之裝置之規格而適當調整即可。此處,表示L 1與(D 21-D 12)/2相等之情形,但表示L 1之式子係根據支撐片21的前述一面21a中之第一區域211a之配置位置或第一區域211a之大小而不同。 In the aforementioned surface 21a of the support piece 21, when the minimum value of the line segment connecting one point of the outer periphery of the first region 211a and one point of the outer periphery of the support piece 21 is set to L1 , and the distance between two adjacent curable resin films 12 is set to L2 , the smaller value between L1 and L2 /2 is preferably 0.03 to 0.25 times, more preferably 0.05 to 0.2 times, relative to the maximum value ( D12 ) of the width of the aforementioned first region 211a. The aforementioned values can be appropriately adjusted, for example, to match the specifications of the device used to continuously attach the curable resin film 12 to the surface of multiple wafers with protruding electrodes. Here, it indicates that L1 is equal to ( D21 - D12 )/2, but the formula for L1 varies depending on the configuration position or size of the first region 211a in the aforementioned side 21a of the support piece 21.

本實施形態之保護膜形成用片不限定於圖2至圖4所示之保護膜形成用片,亦可於圖2至圖4所示之保護膜形成用片中,變更、刪除或追加一部分構成。 例如,圖2所示之保護膜形成用片1中,亦可如圖5所示,於支撐片11的前述一面11a中之第二區域112a中,沿著支撐片11的外周部設有帶狀(此處為圓環狀)之治具用接著劑層13。治具用接著劑層13為用以將保護膜形成用片1固定於環形框架等治具之層。 同樣地,圖4所示之保護膜形成用片2中,亦可於支撐片21的前述一面21a中之第二區域212a中,針對每個硬化性樹脂膜12設有不接觸硬化性樹脂膜12且包圍第一區域211a的環狀之治具用接著劑層。 The protective film forming sheet of this embodiment is not limited to the protective film forming sheets shown in Figures 2 to 4. A portion of the structure can be modified, deleted, or added to the protective film forming sheets shown in Figures 2 to 4. For example, in the protective film forming sheet 1 shown in Figure 2, as shown in Figure 5, a strip-shaped (here, annular) fixture adhesive layer 13 can be provided along the outer periphery of the support sheet 11 in the second region 112a of the aforementioned surface 11a. The fixture adhesive layer 13 is used to fix the protective film forming sheet 1 to a fixture such as a ring frame. Similarly, in the protective film forming sheet 2 shown in Figure 4, an annular fixture adhesive layer may be provided in the second region 212a of the aforementioned side 21a of the support sheet 21, for each cured resin film 12, without contacting the cured resin film 12 and surrounding the first region 211a.

例如,圖2所示之保護膜形成用片1中,於支撐片11為黏著片之情形時,亦可於前述黏著片之黏著劑層上進而設有治具用接著劑層(例如圖5所示之治具用接著劑層13)。For example, in the protective film forming sheet 1 shown in FIG2, when the support sheet 11 is an adhesive sheet, a jig adhesive layer (such as the jig adhesive layer 13 shown in FIG5) may be provided on the adhesive layer of the aforementioned adhesive sheet.

例如,雖然圖2所示之保護膜形成用片1、及圖4所示之保護膜形成用片2中,硬化性樹脂膜12之平面形狀為圓形,但硬化性樹脂膜之平面形狀不限定於此,亦可為四角形等非圓形。For example, although the planar shape of the curing resin film 12 in the protective film forming sheet 1 shown in FIG. 2 and the protective film forming sheet 2 shown in FIG. 4 is circular, the planar shape of the curing resin film is not limited to this, and may also be a non-circular shape such as a quadrilateral.

例如,圖4所示之保護膜形成用片2中,可將一部分或所有的硬化性樹脂膜12不相互等間隔地設置,或者一部分或所有的硬化性樹脂膜12之形狀及大小亦可不同。另外,於保護膜形成用片2之寬度方向,一部分或所有的硬化性樹脂膜12之配置位置亦可不同。For example, in the protective film forming sheet 2 shown in Figure 4, some or all of the cured resin films 12 may be arranged at unequal intervals, or the shape and size of some or all of the cured resin films 12 may be different. In addition, the arrangement positions of some or all of the cured resin films 12 in the width direction of the protective film forming sheet 2 may also be different.

例如,圖4所示之保護膜形成用片2中,硬化性樹脂膜12之個數為3以上,但硬化性樹脂膜12之個數不限定於此。For example, in the protective film forming sheet 2 shown in Figure 4, the number of hardened resin films 12 is 3 or more, but the number of hardened resin films 12 is not limited to this.

例如,圖2所示之保護膜形成用片1或圖4所示之保護膜形成用片2中,亦可於硬化性樹脂膜12的兩面(支撐片11側或支撐片21側之面、及與該面為相反側之面12a)設有支撐片。列舉一例,亦可於圖4所示之保護膜形成用片2中,於硬化性樹脂膜12的與支撐片21側之面為相反側之面12a,設有圖2所示之支撐片11。於該情形時,較佳為支撐片21為剝離膜,且支撐片11為黏著片、或具有前述治具用接著劑層(例如圖5所示之治具用接著劑層13)之支撐片。藉由使用此種形態之保護膜形成用片,圖2所示之保護膜形成用片1之連續供給變得容易。此種形態之保護膜形成用片中,支撐片11及支撐片21均具有未設有硬化性樹脂膜12之第二區域。其中,通常支撐片11作為具有本發明之作用效果之支撐片發揮功能。For example, in the protective film forming sheet 1 shown in FIG. 2 or the protective film forming sheet 2 shown in FIG. 4, support sheets may be provided on both sides of the cured resin film 12 (the side facing the support sheet 11 or the support sheet 21, and the side 12a opposite to that side). As an example, in the protective film forming sheet 2 shown in FIG. 4, the support sheet 11 shown in FIG. 2 may be provided on the side 12a of the cured resin film 12 opposite to the side facing the support sheet 21. In this case, it is preferable that the support sheet 21 is a peeling film, and the support sheet 11 is an adhesive sheet, or a support sheet having the aforementioned jig adhesive layer (e.g., the jig adhesive layer 13 shown in FIG. 5). By using this type of protective film forming sheet, the continuous supply of the protective film forming sheet 1 shown in FIG. 2 becomes easier. In this type of protective film forming sheet, both the support sheet 11 and the support sheet 21 have a second region without the curing resin film 12. Typically, the support sheet 11 functions as a support sheet that has the effects of the present invention.

作為本實施形態之保護膜形成用片之一例,可列舉藉由下述方式所得之積層物:於剝離膜之剝離處理面形成熱硬化性樹脂膜,將前述熱硬化性樹脂膜與前述剝離膜一併加工為圓形,將與具備前述剝離膜之側為相反側之面之整個面與帶狀之背面研磨帶的表面貼合。 前述積層物包含圖4所示之保護膜形成用片2中的支撐片21與硬化性樹脂膜12之積層結構。該積層物中,相當於支撐片21之背面研磨帶具有第二區域,但剝離膜不具有第二區域。 As an example of a protective film forming sheet of this embodiment, a laminate obtained by means of the following method can be cited: a thermosetting resin film is formed on the peeling surface of a peeling membrane; the thermosetting resin film and the peeling membrane are processed together into a circular shape; and the entire surface of the side opposite to the side having the peeling membrane is bonded to the surface of a strip-shaped back abrasive belt. The aforementioned laminate includes the laminated structure of the support sheet 21 and the thermosetting resin film 12 in the protective film forming sheet 2 shown in FIG. 4. In this laminate, the back abrasive belt of the support sheet 21 has a second region, but the peeling membrane does not have a second region.

作為本實施形態之保護膜形成用片之一例,可列舉下述積層物,該積層物係具備:剝離膜;設置於前述剝離膜的一個剝離處理面的熱硬化性樹脂膜;以及背面研磨帶,設置於前述熱硬化性樹脂膜中的與前述剝離膜側為相反側之面;並且,前述剝離膜之平面形狀與前述熱硬化性樹脂膜之平面形狀均為圓形;前述剝離膜與前述熱硬化性樹脂膜於這些膜之徑向上,外周部之位置相互一致地配置;前述背面研磨帶為帶狀。該積層物中,相當於前述支撐片之背面研磨帶具有第二區域,但剝離膜不具有第二區域。As an example of a protective film forming sheet of this embodiment, a laminate can be described as follows: the laminate comprises: a peeling membrane; a thermosetting resin film disposed on a peeling treatment surface of the peeling membrane; and a back abrasive belt disposed on a surface of the thermosetting resin film opposite to the peeling membrane side; wherein the planar shape of the peeling membrane and the planar shape of the thermosetting resin film are both circular; the peeling membrane and the thermosetting resin film are arranged in a consistent manner at their radially adjacent peripheral positions; and the back abrasive belt is strip-shaped. In this laminate, the back abrasive belt corresponding to the support sheet has a second region, but the peeling membrane does not have a second region.

作為本實施形態之保護膜形成用片之一例,可列舉下述保護膜形成用片,該保護膜形成用片係具備:支撐片;以及設置於前述支撐片的一面上的硬化性樹脂膜;並且前述硬化性樹脂膜為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述晶圓的前述面形成保護膜;前述支撐片於前述一面中,具有設有前述硬化性樹脂膜之第一區域、及包圍前述第一區域且未設有前述硬化性樹脂膜之第二區域(但不包括藉由下述方式所獲得之積層物:於剝離膜之剝離處理面形成熱硬化性樹脂膜,將前述熱硬化性樹脂膜與前述剝離膜一併加工為圓形,將熱硬化性樹脂膜具備前述剝離膜之側之相反側之面之整個面來與帶狀之背面研磨帶之表面貼合)。As an example of a protective film forming sheet of this embodiment, a protective film forming sheet can be described as follows: the protective film forming sheet comprises: a support sheet; and a curable resin film disposed on one side of the support sheet; wherein the curable resin film is used to adhere to and cure the surface of the wafer having protruding electrodes, thereby forming a protective film on the aforementioned surface of the wafer; the support sheet has the aforementioned curable resin film disposed on the aforementioned side. The first region of the resin film, and the second region surrounding the first region and not having the aforementioned curable resin film (excluding the deposit obtained by means of: forming a thermosetting resin film on the peeling treatment surface of the peeling film, processing the thermosetting resin film and the peeling film together into a circle, and attaching the entire surface of the thermosetting resin film having the side opposite to the side of the peeling film to the surface of the strip-shaped back abrasive belt).

作為本實施形態之保護膜形成用片之另一例,可列舉下述保護膜形成用片,該保護膜形成用片係具備:支撐片;以及硬化性樹脂膜,設置於前述支撐片的一面上;並且前述硬化性樹脂膜為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述晶圓的前述面形成保護膜之樹脂膜,前述支撐片於前述一面中,具有設有前述硬化性樹脂膜之第一區域、及包圍前述第一區域且未設有前述硬化性樹脂膜之第二區域(但不包括下述積層物:該積層物係具備:剝離膜;熱硬化性樹脂膜,設置於前述剝離膜的一個剝離處理面;以及背面研磨帶,設置於前述熱硬化性樹脂膜中的與前述剝離膜側為相反側之面;並且,前述剝離膜之平面形狀與前述熱硬化性樹脂膜之平面形狀均為圓形,前述剝離膜與前述熱硬化性樹脂膜於這些膜之徑向上,外周部之位置相互一致地配置,前述背面研磨帶為帶狀)。As another example of a protective film forming sheet according to this embodiment, a protective film forming sheet can be described as follows: the protective film forming sheet comprises: a support sheet; and a curable resin film disposed on one side of the support sheet; wherein the curable resin film is a resin film for attaching to and curing the surface of a wafer with protruding electrodes, thereby forming a protective film on the aforementioned surface of the wafer; the support sheet has, on the aforementioned side, a first region in which the curable resin film is disposed, and a region surrounding the first region without the curable resin film. The second region of the resin film (excluding the following deposit: the deposit having: a peeling film; a thermosetting resin film disposed on a peeling treatment surface of the peeling film; and a back abrasive belt disposed on a surface of the thermosetting resin film opposite to the peeling film side; and the planar shape of the peeling film and the planar shape of the thermosetting resin film are both circular, the peeling film and the thermosetting resin film are arranged in a consistent manner in the radial direction of the outer periphery of these films, and the back abrasive belt is strip-shaped).

構成本實施形態之保護膜形成用片的前述硬化性樹脂膜可為熱硬化性及能量線硬化性之任一種,亦可具有熱硬化性及能量線硬化性之雙方的特性。The aforementioned curable resin film constituting the protective film forming sheet of this embodiment can be either thermosetting or energy-curable, or it can have both thermosetting and energy-curable properties.

本說明書中,所謂「能量線」,意指電磁波或帶電粒子束中具有能量量子者。作為能量線之例,可列舉紫外線、放射線、電子束等。紫外線例如可藉由使用高壓水銀燈、融合燈、氙燈、黑光或LED(Light Emitting Diode;發光二極體)燈等作為紫外線源而照射。關於電子束,可照射藉由電子束加速器等而產生者。 本說明書中,所謂「能量線硬化性」,意指藉由照射能量線而硬化之性質。 In this manual, the term "energy line" refers to electromagnetic waves or beams of charged particles containing energy quanta. Examples of energy lines include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be emitted by using high-pressure mercury lamps, fusion lamps, xenon lamps, black lights, or LED (Light Emitting Diode) lamps as ultraviolet sources. Electron beams can be emitted by irradiating particles generated using electron beam accelerators, etc. In this manual, the term "energy line hardening property" refers to the property of hardening by irradiation of energy lines.

前述硬化性樹脂膜可使用含有該硬化性樹脂膜之構成材料的硬化性樹脂膜形成用組成物來形成。例如,前述硬化性樹脂膜可藉由在該硬化性樹脂膜之形成對象面塗敷前述硬化性樹脂膜形成用組成物,視需要加以乾燥來形成。硬化性樹脂膜形成用組成物中的於常溫不氣化之成分彼此之含量之比率通常與硬化性樹脂膜中的前述成分彼此之含量之比率相同。本說明書中,所謂「常溫」,意指不特別冷或熱之溫度、亦即平常之溫度,例如可列舉15℃至25℃之溫度等。The aforementioned curable resin film can be formed using a curable resin film forming composition containing the constituent material of the curable resin film. For example, the aforementioned curable resin film can be formed by applying the aforementioned curable resin film forming composition to the object surface of the curable resin film and drying it as needed. The ratio of the content of the components that do not vaporize at room temperature in the curable resin film forming composition is usually the same as the ratio of the content of the aforementioned components in the curable resin film. In this specification, "room temperature" means a temperature that is neither particularly cold nor hot, that is, a normal temperature, such as temperatures from 15°C to 25°C.

前述硬化性樹脂膜形成用組成物之塗敷只要藉由公知之方法進行即可,例如可列舉:使用氣刀塗佈機、刮刀塗佈機、棒塗機、凹版塗佈機、輥塗機、輥刀塗佈機、簾幕式塗佈機、模塗機、刀片塗佈機、網版塗佈機、邁耶棒塗佈機、輕觸式塗佈機等各種塗佈機之方法。The application of the aforementioned components for forming a hardened resin film can be carried out using known methods, such as: methods using air knife coating machines, scraper coating machines, rod coating machines, gravure coating machines, roller coating machines, roller knife coating machines, curtain coating machines, mold coating machines, blade coating machines, screen coating machines, Mayer rod coating machines, touch coating machines, and other various coating machines.

與前述硬化性樹脂膜為熱硬化性及能量線硬化性之哪一個無關,前述硬化性樹脂膜形成用組成物之乾燥條件並無特別限定。然而,於硬化性樹脂膜形成用組成物含有後述之溶劑之情形時,較佳為進行加熱乾燥。另外,含有溶劑之硬化性樹脂膜形成用組成物例如較佳為於70℃至130℃以10秒鐘至5分鐘之條件進行加熱乾燥。其中,熱硬化性樹脂膜形成用組成物較佳為以使該組成物自身、及由該組成物所形成之熱硬化性樹脂膜不進行熱硬化的方式進行加熱乾燥。Regardless of whether the aforementioned curable resin film is thermosetting or energy-curable, the drying conditions for the aforementioned composition for forming a curable resin film are not particularly limited. However, when the composition for forming a curable resin film contains the solvent described later, heat drying is preferred. Furthermore, curable resin film forming compositions containing solvent are preferably heat-dried at 70°C to 130°C for 10 seconds to 5 minutes. Specifically, thermosetting resin film forming compositions are preferably heat-dried in a manner that prevents the composition itself and the thermosetting resin film formed by the composition from undergoing thermosetting.

作為熱硬化性樹脂膜,例如可列舉含有聚合物成分(A)及熱硬化性成分(B)者。 作為熱硬化性樹脂膜形成用組成物,例如可列舉含有聚合物成分(A)及熱硬化性成分(B)之熱硬化性樹脂膜形成用組成物(III)(於本說明書中,有時簡稱為「組成物(III)」)等。 Examples of thermosetting resin films include those containing a polymer component (A) and a thermosetting component (B). Examples of thermosetting resin film forming components include, for example, thermosetting resin film forming component (III) containing a polymer component (A) and a thermosetting component (B) (sometimes referred to as "Component (III)" in this specification).

就容易將上述Gc300調節為適當之值,將X值調節為適當之值之觀點而言,前述聚合物成分(A)較佳為聚乙烯縮醛。 作為聚合物成分(A)中之前述聚乙烯縮醛,可列舉公知者。其中,作為較佳之聚乙烯縮醛,例如可列舉聚乙烯甲醛、聚乙烯縮丁醛等,更佳為聚乙烯縮丁醛。 From the perspective of easily adjusting the aforementioned Gc300 and X value to an appropriate value, the aforementioned polymer component (A) is preferably polyvinyl acetal. As for the aforementioned polyvinyl acetal in polymer component (A), known alternatives can be listed. Among these, preferred polyvinyl acetals include, for example, polyvinyl formaldehyde and polyvinyl butyral, with polyvinyl butyral being more preferred.

作為前述熱硬化性成分(B),例如可列舉:由環氧樹脂(B1)及熱硬化劑(B2)所構成之環氧系熱硬化性樹脂;聚醯亞胺樹脂;不飽和聚酯樹脂等。Examples of the aforementioned thermosetting component (B) include: epoxy thermosetting resins composed of epoxy resin (B1) and thermosetting agent (B2); polyimide resins; unsaturated polyester resins, etc.

熱硬化性樹脂膜及前述組成物(III)亦可進而含有不相當於聚合物成分(A)及熱硬化性成分(B)之任一者之其他成分。 作為前述其他成分,例如可列舉:硬化促進劑(C)、填充材(D)、偶合劑(E)、交聯劑(F)、能量線硬化性樹脂(G)、光聚合起始劑(H)、添加劑(I)、溶劑等。 The thermosetting resin film and the aforementioned component (III) may further contain other components not equivalent to either the polymer component (A) or the thermosetting component (B). Examples of such other components include: curing accelerators (C), fillers (D), coupling agents (E), crosslinking agents (F), energy-line curing resins (G), photopolymerization initiators (H), additives (I), solvents, etc.

藉由調節前述填充材(D)之含量,而能夠更容易地調節前述X值。 填充材(D)可為有機填充材及無機填充材之任一種,較佳為無機填充材。作為較佳之無機填充材,例如可列舉:二氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、鐵丹、碳化矽、氮化硼等之粉末;將這些無機填充材加以球形化而成之珠粒;這些無機填充材之表面改質品;這些無機填充材之單晶纖維;玻璃纖維等。 在這些之中,無機填充材較佳為二氧化矽或氧化鋁。 By adjusting the content of the aforementioned filler (D), the aforementioned X value can be adjusted more easily. The filler (D) can be either an organic or inorganic filler, preferably an inorganic filler. Preferred inorganic fillers include, for example: powders of silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc.; beads formed by spheroidizing these inorganic fillers; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; glass fibers, etc. Among these, silicon dioxide or alumina is preferred as the inorganic filler.

就進一步提高熱硬化性樹脂膜對晶圓的溝槽之填充性之觀點而言,熱硬化性樹脂膜及前述組成物(III)中,填充材(D)之含量相對於溶劑以外之所有成分之總含量之比率較佳為5質量%至45質量%,更佳為5質量%至40質量%,進而較佳為5質量%至30質量%。From the perspective of further improving the filling performance of thermosetting resin film in wafer trenches, the ratio of the content of filler (D) in thermosetting resin film and the aforementioned composition (III) to the total content of all components other than solvent is preferably 5% to 45% by mass, more preferably 5% to 40% by mass, and even more preferably 5% to 30% by mass.

作為前述添加劑(I),例如可列舉:著色劑、塑化劑、抗靜電劑、抗氧化劑、收氣劑、流變控制劑、界面活性劑、聚矽氧油等。 於能夠適當地調節上述Gc1而容易地調節X值之方面而言,作為較佳之添加劑(I),例如可列舉:流變控制劑、界面活性劑、聚矽氧油等。 Examples of the aforementioned additive (I) include, for example, colorants, plasticizers, antistatic agents, antioxidants, gas-absorbing agents, rheology control agents, surfactants, and polysiloxane oils. Preferred additives (I) for easily adjusting the X value by appropriately adjusting the aforementioned Gc1 include, for example, rheology control agents, surfactants, and polysiloxane oils.

更具體而言,作為前述流變控制劑,例如可列舉:多羥基羧酸酯、多元羧酸、聚醯胺樹脂等。 作為前述界面活性劑,例如可列舉:改質矽氧烷、丙烯酸聚合物等。 作為前述聚矽氧油,例如可列舉芳烷基改質聚矽氧油、改質聚二甲基矽氧烷等,作為改質基,可列舉:芳烷基;羥基等極性基;乙烯基、苯基等具有不飽和鍵之基。 More specifically, examples of rheology control agents include: polyhydroxycarboxylic acid esters, polycarboxylic acids, and polyamide resins. Examples of surfactants include: modified silicates and acrylic polymers. Examples of polysiloxane oils include: aralkyl-modified polysiloxane oils and modified polydimethylsiloxanes. Modifying groups include: aralkyl groups; polar groups such as hydroxyl groups; and groups with unsaturated bonds such as vinyl and phenyl groups.

就前述X值之調節更容易之觀點而言,熱硬化性樹脂膜及前述組成物(III)中,添加劑(I)之含量相對於溶劑以外之所有成分之總含量之比率較佳為0.5質量%至10質量%,更佳為0.5質量%至7質量%,進而較佳為0.5質量%至5質量%。From the perspective that the aforementioned X value is easier to adjust, the ratio of the content of additive (I) to the total content of all components other than solvent in the thermosetting resin film and the aforementioned component (III) is preferably 0.5% to 10% by mass, more preferably 0.5% to 7% by mass, and even more preferably 0.5% to 5% by mass.

熱硬化性樹脂膜及前述組成物(III)所含有之聚合物成分(A)、熱硬化性成分(B)、硬化促進劑(C)、填充材(D)、偶合劑(E)、交聯劑(F)、能量線硬化性樹脂(G)、光聚合起始劑(H)、添加劑(I)、溶劑等各成分各自可僅為一種,或亦可為兩種以上,於為兩種以上之情形時,這些成分之組合及比率可任意選擇。The thermosetting resin film and the aforementioned component (III) contain polymer component (A), thermosetting component (B), curing accelerator (C), filler (D), coupling agent (E), crosslinking agent (F), energy line curing resin (G), photopolymerization initiator (H), additive (I), solvent, etc. Each component may be only one type or may be two or more types. In the case of two or more types, the combination and ratio of these components can be arbitrarily selected.

作為能量線硬化性樹脂膜,例如可列舉含有能量線硬化性成分(a)之能量線硬化性樹脂膜。 作為能量線硬化性樹脂膜形成用組成物,例如可列舉含有能量線硬化性成分(a)之能量線硬化性樹脂膜形成用組成物(IV)(本說明書中,有時僅簡稱為「組成物(IV)」)等。 Examples of energy-curing resin films include those containing energy-curing component (a). Examples of components for forming energy-curing resin films include components (IV) containing energy-curing component (a) (sometimes referred to simply as "component (IV)" in this specification).

能量線硬化性樹脂膜及前述組成物(IV)亦可進而含有不相當於能量線硬化性成分(a)之其他成分。 作為前述其他成分,例如可列舉:不具有能量線硬化性基之聚合物(b)、熱硬化性成分、填充材、偶合劑、交聯劑、光聚合起始劑、添加劑、溶劑等。 The energy-line curable resin film and the aforementioned component (IV) may further contain other components not equivalent to the energy-line curable component (a). Examples of such other components include: polymers (b) lacking energy-line curable groups, thermosetting components, fillers, coupling agents, crosslinking agents, photopolymerization initiators, additives, solvents, etc.

就容易將上述Gc300調節為適當之值,將X值調節為適當之值之觀點而言,不具有能量線硬化性基之聚合物(b)較佳為聚乙烯縮醛。From the perspective of easily adjusting the above-mentioned Gc300 to an appropriate value and adjusting the X value to an appropriate value, the polymer (b) without energy line hardening groups is preferably polyvinyl acetal.

能量線硬化性樹脂膜及前述組成物(IV)中之前述熱硬化性成分、填充材、偶合劑、交聯劑、光聚合起始劑、添加劑及溶劑係與上述熱硬化性樹脂膜及前述組成物(III)中之熱硬化性成分(B)、填充材(D)、偶合劑(E)、交聯劑(F)、光聚合起始劑(H)、添加劑(I)及溶劑相同。The thermosetting components, fillers, coupling agents, crosslinking agents, photopolymerization initiators, additives, and solvents in the energy line curing resin film and the aforementioned composition (IV) are the same as those in the thermosetting components (B), fillers (D), coupling agents (E), crosslinking agents (F), photopolymerization initiators (H), additives (I), and solvents in the aforementioned thermosetting resin film and the aforementioned composition (III).

能量線硬化性樹脂膜及前述組成物(IV)所含有之能量線硬化性成分(a)、不具有能量線硬化性基之聚合物(b)、熱硬化性成分、填充材、偶合劑、交聯劑、光聚合起始劑、添加劑、溶劑等各成分各自可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些成分之組合及比率可任意選擇。The energy-curing resin film and the aforementioned components (IV) contain energy-curing components (a), polymers (b) without energy-curing groups, thermosetting components, fillers, coupling agents, crosslinking agents, photopolymerization initiators, additives, solvents, etc. Each component may be only one type or two or more types. In the case of two or more types, the combination and ratio of these components can be arbitrarily selected.

構成本實施形態之保護膜形成用片的前述支撐片亦可為公知者。 例如,作為僅由前述基材構成之支撐片之構成材料,可列舉各種樹脂。 作為前述樹脂,例如可列舉:聚乙烯;聚丙烯等聚乙烯以外之聚烯烴;乙烯系共聚物(使用乙烯作為單體而得之共聚物);氯乙烯系樹脂(使用氯乙烯作為單體而得之樹脂);聚苯乙烯;聚環烯烴;聚酯;兩種以上之前述聚酯之共聚物;聚(甲基)丙烯酸酯;聚胺基甲酸酯;聚丙烯酸胺基甲酸酯;聚醯亞胺;聚醯胺;聚碳酸酯;氟樹脂;聚縮醛;改質聚苯醚;聚苯硫醚;聚碸;聚醚酮等。 另外,作為前述樹脂,例如亦可列舉前述聚酯與該聚酯以外之樹脂之混合物等聚合物合金。 另外,作為前述樹脂,例如亦可列舉:到此為止所例示之前述樹脂之一種或兩種以上交聯而成之交聯樹脂;使用到此為止所例示之前述樹脂之一種或兩種以上而成的離子聚合物等改質樹脂。 The aforementioned support sheet constituting the protective film forming sheet of this embodiment is also known. For example, various resins can be listed as constituent materials of the support sheet composed solely of the aforementioned substrate. Examples of the aforementioned resins include: polyethylene; polyolefins other than polyethylene such as polypropylene; ethylene-based copolymers (polymers obtained using ethylene as a monomer); vinyl chloride-based resins (resins obtained using vinyl chloride as a monomer); polystyrene; polycyclic olefins; polyesters; copolymers of two or more of the aforementioned polyesters; poly(meth)acrylates; polyurethane; polyurethane acrylates; polyimide; polyamide; polycarbonate; fluororesins; polyacetal; modified polyphenylene ether; polyphenylene sulfide; polyurethane; polyetherketone, etc. Furthermore, examples of the aforementioned resins include, for instance, polymer alloys such as mixtures of the aforementioned polyester and resins other than the polyester. Also, examples of the aforementioned resins include, for instance, crosslinked resins formed by crosslinking one or more of the aforementioned resins as described above; modified resins such as ionic polymers formed using one or more of the aforementioned resins as described above.

本說明書中,所謂「(甲基)丙烯酸」,係設為包含「丙烯酸」及「甲基丙烯酸」兩者之概念。關於與(甲基)丙烯酸類似之用語亦同,例如所謂「(甲基)丙烯酸酯」,為包含「丙烯酸酯」及「甲基丙烯酸酯」兩者之概念。In this manual, the term "(meth)acrylic acid" is intended to include both "acrylic acid" and "methacrylic acid". Similarly, the term "(meth)acrylate" includes both "acrylate" and "methacrylate".

構成僅由基材構成之支撐片的樹脂可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些樹脂之組合及比率可任意選擇。The resin constituting the support sheet consisting solely of a substrate may be of one type or more types. In the case of two or more types, the combination and ratio of these resins may be arbitrarily selected.

就通用性之觀點,以及於後述之具保護膜之晶片的製造方法中,於使具備支撐片之狀態之硬化性樹脂膜進行熱硬化之情形時,能夠對支撐片賦予耐熱性,另外就容易防止晶圓翹曲之觀點而言,前述樹脂較佳為聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯等聚酯;聚丙烯等。於該情形時,支撐片(基材)只要具有選自由包含聚酯之層、及包含聚丙烯膜之層所組成之群組中的一層或兩層以上,則可為單層,亦可為兩層以上之多層。From the perspective of versatility, and in the manufacturing method of the protective film described later, when the curable resin film in the state of having a support sheet is thermo-cured, it can impart heat resistance to the support sheet. In addition, from the perspective of easily preventing wafer warping, the aforementioned resin is preferably a polyester such as polyethylene terephthalate or polybutylene terephthalate; or a polypropylene. In this case, the support sheet (substrate) can be a single layer or a multilayer structure, as long as it has one or more layers selected from the group consisting of a polyester layer and a polypropylene film layer.

僅由前述基材構成且含有樹脂之支撐片可藉由將含有前述樹脂之樹脂組成物加以成形而製作。A support sheet consisting solely of the aforementioned substrate and containing resin can be manufactured by molding a resin composition containing the aforementioned resin.

作為前述支撐片之前述剝離膜亦可為下述剝離膜:自身由具有脫模性之材料構成,或具備易剝離性之層,藉此硬化性樹脂膜之剝離變容易。前述剝離膜可除了自身由具有脫模性之材料構成,或於基材上具備易剝離性之層之方面以外,與僅由前述基材所構成之支撐片相同。The release film used as the aforementioned support sheet can also be a release film composed of a material with release properties or having a peelable layer, thereby facilitating the peeling of the hardened resin film. The aforementioned release film can be identical to the support sheet composed solely of the aforementioned substrate, except that it is composed of a material with release properties or has a peelable layer on the substrate.

作為前述具有脫模性之材料,例如可列舉氟樹脂等。 作為前述易剝離性之層,例如可列舉:由聚矽氧系剝離劑、醇酸系剝離劑等剝離劑所構成之層。 Materials with release properties, such as fluoropolymers, can be cited as examples. Layers with easy-to-peel properties, such as those composed of polysiloxane-based or alkyd-based release agents, can be cited as examples.

作為前述支撐片之前述黏著片通常具備膜狀或片狀之基材、以及黏著劑層,亦可進而於基材與黏著劑層之間具備用以填埋突起狀電極之中間層。 作為黏著片中之前述基材,例如可列舉與僅由前述基材構成之支撐片相同者。 作為黏著片中之前述黏著劑層所含有之黏著劑,例如可列舉:丙烯酸系黏著劑、橡膠系黏著劑、胺基甲酸酯系黏著劑等。黏著劑層亦可藉由能量線之照射而黏著性降低。 作為黏著片中之前述中間層所含有之成分,例如可列舉:(甲基)丙烯酸胺基甲酸酯化合物之硬化物、熱塑性聚烯烴系樹脂(具有自烯烴衍生而成之構成單位之熱塑性樹脂)等。 The aforementioned adhesive sheet, serving as the support sheet, typically comprises a film-like or sheet-like substrate and an adhesive layer. An intermediate layer may also be provided between the substrate and the adhesive layer to embed the protruding electrodes. The aforementioned substrate in the adhesive sheet can be, for example, the same as that used in a support sheet composed solely of the aforementioned substrate. The adhesive contained in the aforementioned adhesive layer in the adhesive sheet can be, for example, acrylic adhesives, rubber adhesives, or carbamate adhesives. The adhesive layer's adhesion can also be reduced by irradiation with an energy beam. Components contained in the aforementioned intermediate layer of the adhesive sheet may include, for example, a cured form of (meth)acrylate aminocarbamate compound, and thermoplastic polyolefin resins (thermoplastic resins having constituent units derived from olefins).

支撐片亦可為背面研磨帶。亦即,後述晶圓之內面研削亦可於將支撐片貼附於硬化性樹脂膜之狀態下進行。 另外,支撐片亦可於晶圓之內面研削時,未貼附於硬化性樹脂膜。例如,在後述的具保護膜之晶片的製造方法中的製造方法2所用之支撐片可於硬化步驟之前去除,於該情形時,於晶圓之內面研削時,另將背面研磨帶貼附於硬化性樹脂膜。因此,支撐片並非必須具有作為背面研磨帶所需求之特性。另外,即便硬化步驟中伴隨硬化性樹脂膜之加熱而支撐片因加熱發生變形,或支撐片具有黏著劑層且該黏著劑層因加熱而軟化,亦能夠藉由將此種性質之支撐片於硬化步驟之前去除,而避免前述變形、軟化等問題。 The support sheet can also be a back-side polishing tape. That is, the inner-side polishing of the wafer, as described later, can also be performed with the support sheet attached to the hardened resin film. Alternatively, the support sheet can also be used during inner-side polishing of the wafer without being attached to the hardened resin film. For example, in manufacturing method 2 of the wafer manufacturing method with a protective film described later, the support sheet can be removed before the hardening step. In this case, during inner-side polishing of the wafer, a back-side polishing tape is attached to the hardened resin film. Therefore, the support sheet does not necessarily need to possess the characteristics required to be a back-side polishing tape. Furthermore, even if the support sheet deforms due to heating during the curing process along with the curing resin film, or if the support sheet has an adhesive layer that softens due to heating, these problems can be avoided by removing the support sheet with these properties before the curing process.

前述治具用接著劑層例如可具有含有接著劑成分之單層結構,或亦可具有多層結構,該多層結構具備成為芯材之片、及設置於前述片的兩面且含有接著劑成分之層。作為含有接著劑成分之層,可列舉與前述黏著片中的黏著劑層同樣者。The adhesive layer for the aforementioned fixture may have a single-layer structure containing adhesive components, or it may have a multi-layer structure, which includes a sheet serving as the core material and layers disposed on both sides of the sheet and containing adhesive components. Examples of layers containing adhesive components include those similar to the adhesive layer in the aforementioned adhesive sheet.

[保護膜形成用片的製造方法] 本實施形態之保護膜形成用片可藉由將上述各層(支撐片、硬化性樹脂膜、治具用接著劑層等)以成為對應之位置關係之方式依序積層而製造。各層之形成方法如上文所說明。另外,各層只要視需要於該層之積層前後之任一時序調節層之形狀即可。 [Manufacturing Method of Protective Film Forming Sheet] The protective film forming sheet of this embodiment can be manufactured by sequentially laminating the aforementioned layers (support sheet, curing resin film, fixture adhesive layer, etc.) in a corresponding positional relationship. The formation method of each layer is as described above. Furthermore, the shape of each layer can be adjusted at any time before or after its lamination, as needed.

例如,於前述保護膜形成用片的製造時,藉由在前述支撐片的一面上塗敷前述硬化性樹脂膜形成用組成物,視需要加以乾燥,而可於支撐片上積層前述硬化性樹脂膜。 另外,於前述保護膜形成用片的製造時,使用剝離膜作為支撐片,於該剝離膜的一面(剝離處理面)上塗敷前述硬化性樹脂膜形成用組成物,視需要加以乾燥,藉此於剝離膜上形成前述硬化性樹脂膜,獲得保護膜形成用片。於如此使用剝離膜作為支撐片之情形時,於下述方面而言較佳:於剝離膜的大致整個面形成硬化性樹脂膜後,將硬化性樹脂膜裁斷為與作為剝離膜的第一區域而設想的形狀相同之形狀(例如圓形),以產生第二區域之方式將多餘之硬化性樹脂膜去除,藉此容易獲得保護膜形成用片。另外,於使用帶狀之剝離膜作為支撐片之情形時,於下述方面而言較佳:以產生第二區域之方式將多餘之硬化性樹脂膜連續去除,藉此容易獲得圖4所示之保護膜形成用片2。另外,於下述方面而言較佳:將保護膜形成用片2的硬化性樹脂膜之露出面(與剝離膜側為相反側之面),與作為黏著片之支撐片的黏著面(例如黏著劑層之露出面)貼合後,將黏著片裁斷成較硬化性樹脂膜12更大的同心圓形,將多餘之黏著片連續去除,藉此以連續設置於帶狀之剝離膜上之狀態獲得圖2所示之保護膜形成用片1。於該情形時,硬化性樹脂膜上之剝離膜可於使用保護膜形成用片時去掉。 For example, during the manufacture of the aforementioned protective film forming sheet, the aforementioned curable resin film forming composition is applied to one side of the aforementioned support sheet and dried as needed, thereby depositing the aforementioned curable resin film on the support sheet. Alternatively, during the manufacture of the aforementioned protective film forming sheet, a peeling membrane is used as the support sheet, and the aforementioned curable resin film forming composition is applied to one side of the peeling membrane (the peeling treatment surface) and dried as needed, thereby forming the aforementioned curable resin film on the peeling membrane, thus obtaining the protective film forming sheet. When using a release membrane as a support sheet, it is preferable to form a hardened resin film on approximately the entire surface of the release membrane, then cut the hardened resin film into a shape (e.g., a circle) that is the same as the shape envisioned for the first region of the release membrane, and remove excess hardened resin film in a manner that creates a second region, thereby easily obtaining a protective film forming sheet. Alternatively, when using a strip-shaped release membrane as a support sheet, it is preferable to continuously remove excess hardened resin film in a manner that creates a second region, thereby easily obtaining the protective film forming sheet 2 shown in FIG. 4. Furthermore, it is preferable to adhere the exposed surface of the cured resin film (the side opposite to the release film side) of the protective film forming sheet 2 to the adhesive surface of the support sheet serving as the adhesive sheet (e.g., the exposed surface of the adhesive layer), then cut the adhesive sheet into concentric circles larger than the cured resin film 12, and continuously remove the excess adhesive sheet, thereby obtaining the protective film forming sheet 1 shown in FIG. 2 in a state of continuous placement on the strip-shaped release film. In this case, the release film on the cured resin film can be removed when using the protective film forming sheet.

[具保護膜之晶片的製造方法] 本發明之一實施形態之具保護膜之晶片的製造方法係具有:貼附步驟,一邊將上述本發明之一實施形態之保護膜形成用片中之前述硬化性樹脂膜加熱,一邊貼附於晶圓的具有突起狀電極之面;硬化步驟,使貼附後之前述硬化性樹脂膜硬化,藉此於前述晶圓的前述面形成保護膜;以及加工步驟,將形成前述保護膜後之前述晶圓分割,切斷前述保護膜,藉此獲得具保護膜之晶片,該具保護膜之晶片具備晶片、及設置於前述晶片的切斷後之前述保護膜。 根據本實施形態之具保護膜之晶片的製造方法,能夠於前述貼附步驟中,抑制形成硬化性樹脂膜的未貼附於晶圓且厚度增厚之區域。結果,於貼附步驟以後之步驟中,能夠抑制晶圓之側面、或具保護膜之晶片的製造裝置的任一部位因硬化性樹脂膜的多餘部位之附著而被污染。 [Method for Manufacturing a Wafer with a Protective Film] A method for manufacturing a wafer with a protective film according to one embodiment of the present invention comprises: a bonding step, wherein a curable resin film described above in the protective film forming wafer of one embodiment of the present invention is heated and bonded to the surface of a wafer having protruding electrodes; a curing step, wherein the bonded curable resin film is cured, thereby forming a protective film on the aforementioned surface of the wafer; and a processing step, wherein the wafer after the protective film has been formed is diced, and the protective film is cut, thereby obtaining a wafer with a protective film, the wafer having a protective film comprising a wafer and the aforementioned protective film disposed on the diced wafer. According to the method for manufacturing a wafer with a protective film according to this embodiment, in the aforementioned bonding step, areas where the hardened resin film is not bonded to the wafer and where its thickness increases can be suppressed. As a result, in steps following the bonding step, contamination of the wafer side or any part of the wafer manufacturing apparatus with the protective film due to excess hardened resin film adhesion can be prevented.

圖6A至圖6E為用以示意性地說明本實施形態之具保護膜之晶片的製造方法之一例的剖面圖。 此處,列舉使用圖2至圖3所示之保護膜形成用片1之情形為例進行說明,於使用圖4所示之保護膜形成用片2、或其他本實施形態之保護膜形成用片之情形時,具保護膜之晶片的製造方法之主旨亦相同。 Figures 6A to 6E are cross-sectional views illustrating one example of a method for manufacturing a wafer with a protective film according to this embodiment. Here, the example using the protective film forming sheet 1 shown in Figures 2 and 3 is used for explanation. The principle of the method for manufacturing a wafer with a protective film remains the same when using the protective film forming sheet 2 shown in Figure 4, or other protective film forming sheets of this embodiment.

前述貼附步驟中,一邊將保護膜形成用片1中之硬化性樹脂膜12加熱,一邊貼附於晶圓9的具有突起狀電極91之面9a。藉此,如圖6A所示,獲得具保護膜形成用片之晶圓101,該具保護膜形成用片之晶圓101具備保護膜形成用片1、及設置於保護膜形成用片1中的硬化性樹脂膜12之中與支撐片11側為相反側之面12a上的晶圓9,晶圓9中的突起狀電極91的前述面9a附近之基部由硬化性樹脂膜12被覆而構成。再者,圖6A中,表示了直至突起狀電極91的頭頂部經硬化性樹脂膜12被覆之狀態,但亦可為突起狀電極91之頭頂部未經硬化性樹脂膜12被覆而露出之狀態。另外,於支撐片11為黏著片或具有治具用接著劑層之支撐片之情形時,支撐片11之周緣部亦可貼附於環形框架等治具(圖示省略)。In the aforementioned attachment step, the curable resin film 12 in the protective film forming sheet 1 is heated while being attached to the surface 9a of the wafer 9 with protruding electrodes 91. Thus, as shown in FIG. 6A, a wafer 101 with a protective film forming sheet is obtained. This wafer 101 has a protective film forming sheet 1 and a wafer 9 disposed in the curable resin film 12 in the protective film forming sheet 1 on a surface 12a opposite to the side of the support sheet 11. The base of the protruding electrodes 91 in the wafer 9 near the aforementioned surface 9a is formed by being covered by the curable resin film 12. Furthermore, Figure 6A shows the state where the top of the protruding electrode 91 is covered by the hardened resin film 12, but it could also show the state where the top of the protruding electrode 91 is not covered by the hardened resin film 12 and is exposed. In addition, when the support piece 11 is an adhesive piece or a support piece with a jig adhesive layer, the periphery of the support piece 11 can also be attached to a jig such as a ring frame (not shown).

保護膜形成用片1中的支撐片11於該一面11a上具有第二區域112a。因此,於將保護膜形成用片1中的硬化性樹脂膜12貼附於晶圓9的具有突起狀電極之面9a時,能夠使硬化性樹脂膜12的未貼附於晶圓9之區域變窄或消失,能夠減少流動之硬化性樹脂膜之量。另外,硬化性樹脂膜12的未貼附於晶圓9之區域中之周緣部附近之區域不會變得低溫。結果,於前述貼附步驟中,即便硬化性樹脂膜12因承受於該厚度方向之貼附時之壓力而向晶圓9之徑向外側(圖6A中向左、向右或向左右)流動,亦即從貼附於晶圓9之區域(支撐片11之第一區域111a上)向未貼附於晶圓9之區域(支撐片11之第二區域112a上)流動,亦能夠抑制於支撐片11之第二區域112a上形成硬化性樹脂膜12之厚度增厚之區域。The support sheet 11 in the protective film forming sheet 1 has a second region 112a on one side 11a. Therefore, when the curable resin film 12 in the protective film forming sheet 1 is attached to the surface 9a of the wafer 9 with protruding electrodes, the area of the curable resin film 12 not attached to the wafer 9 can be narrowed or disappeared, thereby reducing the amount of flowing curable resin film. In addition, the area near the periphery of the area of the curable resin film 12 not attached to the wafer 9 will not become cold. As a result, in the aforementioned attachment step, even if the hardened resin film 12 flows outward along the diameter of the wafer 9 (to the left, right, or left and right in Figure 6A) due to the pressure during attachment in the thickness direction, that is, from the area attached to the wafer 9 (on the first area 111a of the support sheet 11) to the area not attached to the wafer 9 (on the second area 112a of the support sheet 11), it is possible to suppress the formation of an area where the thickness of the hardened resin film 12 increases on the second area 112a of the support sheet 11.

於晶圓9的具有突起狀電極91之面9a,形成有多條將晶圓9加以分割而單片化為晶片時成為晶圓9的分割部位之溝槽90。於該情形時,於前述貼附步驟中,於對晶圓9的前述面9a貼附硬化性樹脂膜12時,將硬化性樹脂膜12填充至前述溝槽90的一部分或全部區域。圖6A中,表示於溝槽90的全部區域填充有硬化性樹脂膜12之狀態。On the surface 9a of wafer 9, which has protruding electrodes 91, a plurality of grooves 90 are formed to divide wafer 9 into wafers, thus becoming the dicing portions of wafer 9. In this case, during the aforementioned attachment step, when the curable resin film 12 is attached to the aforementioned surface 9a of wafer 9, the curable resin film 12 fills part or all of the aforementioned grooves 90. Figure 6A shows the state in which the entire area of the grooves 90 is filled with the curable resin film 12.

溝槽90例如可藉由使用公知之切割方法自晶圓9的前述面9a於晶圓9之厚度方向形成切口而形成。該方法於該領域中有時稱為「半切」。作為切割之方法,例如可列舉刀片切割、電漿切割等,並無特別限定。The groove 90 can be formed, for example, by forming a cut in the thickness direction of the wafer 9 from the aforementioned surface 9a using a known cutting method. This method is sometimes referred to as "half-cut" in the field. Examples of cutting methods include blade cutting and plasma cutting, and there is no particular limitation.

溝槽90之深度只要未達晶圓9之厚度,則並無特別限定,較佳為30μm至700μm,更佳為60μm至600μm,進而較佳為100μm至500μm。藉由溝槽90之深度為前述下限值以上,而於後述之加工步驟中,研削面容易藉由晶圓9的內面9b之研削而到達晶圓9,故而能夠更容易地分割晶圓9。藉由溝槽90之深度為前述上限值以下,而研削前之晶圓9之強度變得更高。The depth of the groove 90 is not particularly limited as long as it does not reach the thickness of the wafer 9, but is preferably 30μm to 700μm, more preferably 60μm to 600μm, and even more preferably 100μm to 500μm. Because the depth of the groove 90 is above the aforementioned lower limit, the grinding surface can be easily reached by grinding the inner surface 9b of the wafer 9 in the subsequent processing steps, thus making it easier to cleave the wafer 9. Because the depth of the groove 90 is below the aforementioned upper limit, the strength of the wafer 9 before grinding becomes higher.

溝槽90之寬度較佳為10μm至2000μm,更佳為30μm至1000μm,進而較佳為40μm至500μm,尤佳為50μm至300μm。藉由溝槽90之寬度為前述下限值以上,而於後述之加工步驟中,於晶圓9的內面9b之研削時,容易防止單片化後之晶片彼此因研削之振動而接觸。藉由溝槽90之寬度為前述上限值以下,而研削前之晶圓9之強度變得更高。The width of the groove 90 is preferably 10μm to 2000μm, more preferably 30μm to 1000μm, further preferably 40μm to 500μm, and even more preferably 50μm to 300μm. By having the width of the groove 90 above the aforementioned lower limit, it is easier to prevent the monolithized wafers from contacting each other due to grinding vibrations during the grinding process described later in the processing steps. By having the width of the groove 90 below the aforementioned upper limit, the strength of the wafer 9 before grinding becomes higher.

突起狀電極91之高度並無特別限定,較佳為30μm至300μm,更佳為60μm至250μm,進而較佳為80μm至200μm。藉由突起狀電極91之高度為前述下限值以上,而能夠進一步提高突起狀電極91之功能。藉由突起狀電極91之高度為前述上限值以下,而容易以高密度設置突起狀電極91,另外,可降低處理晶圓9時的突起狀電極91之破損之可能性。 本說明書中,所謂「突起狀電極之高度」,意指存在於突起狀電極中距晶圓的具有突起狀電極之面(電路面)最高的位置之部位的高度。 The height of the protruding electrode 91 is not particularly limited, but is preferably 30μm to 300μm, more preferably 60μm to 250μm, and even more preferably 80μm to 200μm. By ensuring the height of the protruding electrode 91 is above the aforementioned lower limit, the functionality of the protruding electrode 91 can be further improved. By ensuring the height of the protruding electrode 91 is below the aforementioned upper limit, it is easier to install the protruding electrodes 91 at high density, and the possibility of damage to the protruding electrodes 91 during wafer processing can be reduced. In this specification, the term "height of the protruding electrode" refers to the height of the portion of the protruding electrode located at the highest point on the wafer's surface (electrical surface) where the protruding electrode is located.

晶圓9之厚度並無特別限定,較佳為100μm至1000μm,更佳為200μm至900μm,進而較佳為300μm至800μm。藉由晶圓9之厚度為前述下限值以上,而容易抑制硬化性樹脂膜12的硬化時之收縮所伴隨之晶圓翹曲。藉由晶圓9之厚度為前述上限值以下,而能夠抑制後述之加工步驟中的晶圓9的內面9b之研削量,縮短研削所需要之時間。The thickness of wafer 9 is not particularly limited, but is preferably 100μm to 1000μm, more preferably 200μm to 900μm, and even more preferably 300μm to 800μm. By having the thickness of wafer 9 above the aforementioned lower limit, wafer warping caused by shrinkage during the curing of the hardening resin film 12 can be easily suppressed. By having the thickness of wafer 9 below the aforementioned upper limit, the amount of grinding on the inner surface 9b of wafer 9 in the subsequent processing steps can be suppressed, thus shortening the grinding time.

一邊將硬化性樹脂膜12加熱一邊貼附於晶圓9的前述面9a時之硬化性樹脂膜12之加熱可藉由公知方法進行。例如,亦可藉由使載置晶圓之工作台之溫度上升,而將晶圓加熱,將該經加熱之晶圓作為加熱源而加熱硬化性樹脂膜12。The heating of the curable resin film 12 while it is being heated and attached to the aforementioned surface 9a of the wafer 9 can be performed by known methods. For example, the wafer can be heated by raising the temperature of the stage on which the wafer is placed, and the heated wafer can be used as a heat source to heat the curable resin film 12.

一邊將硬化性樹脂膜12加熱一邊貼附於晶圓9的前述面9a時之硬化性樹脂膜12之溫度(加熱溫度)並無特別限定,較佳為50℃至150℃,更佳為60℃至130℃,進而較佳為70℃至110℃。藉由前述溫度為前述下限值以上,而能夠將硬化性樹脂膜12更高程度無間隙地填充於突起狀電極91的基部或溝槽90。藉由前述溫度為前述上限值以下,而能夠抑制硬化性樹脂膜12的流動性過高之情形之不良狀況。The temperature (heating temperature) of the curable resin film 12 when it is heated and attached to the aforementioned surface 9a of the wafer 9 is not particularly limited, but is preferably 50°C to 150°C, more preferably 60°C to 130°C, and even more preferably 70°C to 110°C. By setting the aforementioned temperature above the aforementioned lower limit, the curable resin film 12 can be filled more seamlessly into the base of the protruding electrode 91 or the groove 90. By setting the aforementioned temperature below the aforementioned upper limit, the undesirable condition of excessive flowability of the curable resin film 12 can be suppressed.

一邊將硬化性樹脂膜12加熱一邊貼附於晶圓9的前述面9a時之對硬化性樹脂膜12施加之壓力(於晶圓9之厚度方向之加壓壓力)並無特別限定,較佳為0.1MPa至1.5MPa,更佳為0.3MPa至1MPa。藉由前述壓力為前述下限值以上,而能夠將硬化性樹脂膜12更高程度無間隙地填充於晶圓9之溝槽90。藉由前述壓力為前述上限值以下,而能夠高程度地抑制晶圓9之破損。The pressure applied to the hardened resin film 12 while it is being heated and attached to the aforementioned surface 9a of the wafer 9 (the pressure applied in the thickness direction of the wafer 9) is not particularly limited, but is preferably 0.1 MPa to 1.5 MPa, more preferably 0.3 MPa to 1 MPa. By applying a pressure above the aforementioned lower limit, the hardened resin film 12 can be filled into the trench 90 of the wafer 9 to a greater extent without gaps. By applying a pressure below the aforementioned upper limit, damage to the wafer 9 can be suppressed to a greater extent.

於前述貼附步驟中,較佳為使用輥將硬化性樹脂膜12貼附於晶圓9之前述面9a。於使用輥將習知產品之硬化性樹脂膜貼附於晶圓9的前述面9a之情形時,容易明顯產生下述不良狀況:習知產品之硬化性樹脂膜自貼附於晶圓之區域向未貼附於晶圓之區域流動,導致未貼附於晶圓之區域相較於貼附於晶圓之區域而厚度增厚。原因在於:於輥之行進方向,硬化性樹脂膜之流動方向有偏差。相對於此,本實施形態中,藉由使用前述保護膜形成用片,而能夠抑制此種不良狀況。亦即,本實施形態中,藉由在前述貼附步驟中使用輥將硬化性樹脂膜12貼附於晶圓9的前述面9a,本發明之效果明顯提高。In the aforementioned attachment step, it is preferable to use a roller to attach the cured resin film 12 to the aforementioned surface 9a of the wafer 9. When using a roller to attach the cured resin film of a conventional product to the aforementioned surface 9a of the wafer 9, the following undesirable situation is likely to occur: the cured resin film of the conventional product flows from the area attached to the wafer to the area not attached to the wafer, resulting in the area not attached to the wafer being thicker than the area attached to the wafer. The reason is that the flow direction of the cured resin film is deviated in the direction of roller travel. In contrast, in this embodiment, by using the aforementioned protective film forming sheet, this undesirable situation can be suppressed. That is, in this embodiment, by using a roller to attach the hardened resin film 12 to the aforementioned surface 9a of the wafer 9 in the aforementioned attachment step, the effect of the present invention is significantly improved.

硬化性樹脂膜12可藉由公知方法使用輥貼附於晶圓9的前述面9a。亦即,使保護膜形成用片1的支撐片11側之最表面(此處為支撐片11中的與硬化性樹脂膜12側為相反側之面)與旋轉之輥的輥面接觸,藉此一邊將保護膜形成用片1送往輥之行進方向,一邊使晶圓9的前述面9a密接於保護膜形成用片1中的硬化性樹脂膜12的與支撐片11側為相反側之面12a,藉此能夠將硬化性樹脂膜12貼附於晶圓9的前述面9a。The curable resin film 12 can be attached to the aforementioned surface 9a of the wafer 9 using a roller by a known method. That is, the outermost surface of the support sheet 11 side of the protective film forming sheet 1 (the side of the support sheet 11 opposite to the side of the curable resin film 12) is brought into contact with the roller surface of the rotating roller, thereby feeding the protective film forming sheet 1 in the direction of roller travel, while the aforementioned surface 9a of the wafer 9 is brought into close contact with the side 12a of the curable resin film 12 in the protective film forming sheet 1, which is opposite to the side of the support sheet 11, thereby attaching the curable resin film 12 to the aforementioned surface 9a of the wafer 9.

作為晶圓9,較佳為使用下述晶圓:對該晶圓9自具有突起狀電極91之面9a的上方朝下看時之面積(亦即,前述面9a的俯視時之面積)相對於硬化性樹脂膜12的與支撐片11側為相反側之面12a之面積(亦即,硬化性樹脂膜12的對晶圓9之貼附面之面積)為同等以上。 而且,前述貼附步驟中,較佳為使用此種晶圓9,將硬化性樹脂膜12的前述面12a(對晶圓9之貼附面)之整個面貼附於晶圓9之前述面9a。 如此一來,硬化性樹脂膜12的前述面12a之整個面由晶圓9的前述面9a覆蓋,藉此能夠進一步減少硬化性樹脂膜12向支撐片11的第二區域112a上之溢出量,結果能夠進一步抑制形成硬化性樹脂膜12的未貼附於晶圓且厚度增厚之區域。 As for wafer 9, it is preferable to use a wafer in which the area of the wafer 9 when viewed from above the surface 9a having the protruding electrodes 91 (i.e., the area of the aforementioned surface 9a when viewed from above) is equal to or greater than the area of the surface 12a of the cured resin film 12 opposite to the side of the support sheet 11 (i.e., the area of the surface of the cured resin film 12 that adheres to the wafer 9). Furthermore, in the aforementioned attachment step, it is preferable to use this type of wafer 9 to attach the entire surface 12a (the surface of the surface of the wafer 9 that adheres to the wafer 9) of the cured resin film 12 to the aforementioned surface 9a of the wafer 9. In this way, the entire surface 12a of the cured resin film 12 is covered by the surface 9a of the wafer 9, thereby further reducing the amount of cured resin film 12 spilling onto the second region 112a of the support sheet 11. Consequently, it further suppresses the formation of areas where the cured resin film 12 is not attached to the wafer and has increased thickness.

就如此進一步抑制形成硬化性樹脂膜12之厚度增厚之區域之方面而言,作為前述貼附步驟中適合使用的硬化性樹脂膜12與晶圓9之組合,例如可列舉:寬度之最大值(直徑)D 12為140mm至150mm之硬化性樹脂膜12與直徑為6吋之晶圓9之組合;寬度之最大值(直徑)D 12為190mm至200mm之硬化性樹脂膜12與直徑為8吋之晶圓9之組合;寬度之最大值(直徑)D 12為290mm至300mm之硬化性樹脂膜12與直徑為12吋之晶圓9之組合;寬度之最大值(直徑)D 12為440mm至450mm之硬化性樹脂膜12與直徑為18吋之晶圓9之組合。 Regarding further suppressing the formation of areas where the thickness of the hardened resin film 12 increases, suitable combinations of the hardened resin film 12 and the wafer 9 used in the aforementioned attachment step include, for example: a combination of a hardened resin film 12 with a maximum width (diameter) D 12 of 140mm to 150mm and a wafer 9 with a diameter of 6 inches; a combination of a hardened resin film 12 with a maximum width (diameter) D 12 of 190mm to 200mm and a wafer 9 with a diameter of 8 inches; a combination of a hardened resin film 12 with a maximum width (diameter) D 12 of 290mm to 300mm and a wafer 9 with a diameter of 12 inches; and a combination of a hardened resin film 12 with a maximum width (diameter) D 12 of 140mm to 150mm and a wafer 9 with a diameter of 6 inches. 12 is a combination of a 440mm to 450mm hardened resin film 12 and an 18-inch diameter wafer 9.

於前述硬化步驟中,藉由使貼附於晶圓9後之硬化性樹脂膜12硬化,而如圖6B所示,於晶圓9的前述面9a形成保護膜12’。藉此,獲得具保護膜之晶圓102,該具保護膜之晶圓102具備晶圓9、及設置於晶圓9的具有突起狀電極91之面9a之保護膜12’。具保護膜之晶圓102中的保護膜12’於與晶圓9側為相反側之面12b’,進而具備支撐片11。圖6B中,符號12a’表示保護膜12’的與支撐片11側為相反側之面。 具保護膜之晶圓102中,晶圓9中的突起狀電極91的前述面9a附近之基部由保護膜12’被覆,於晶圓9的溝槽90之全部區域填充有保護膜12’。 In the aforementioned curing step, by curing the curable resin film 12 attached to the wafer 9, a protective film 12' is formed on the aforementioned surface 9a of the wafer 9, as shown in FIG. 6B. This yields a wafer 102 with a protective film, which includes the wafer 9 and the protective film 12' disposed on the surface 9a of the wafer 9, having protruding electrodes 91. On the surface 12b' opposite to the wafer 9 side of the protective film 12' in the wafer 102, a support sheet 11 is further formed. In FIG. 6B, the symbol 12a' indicates the surface of the protective film 12' opposite to the support sheet 11 side. In the wafer 102 with a protective film, the base near the aforementioned surface 9a of the protruding electrode 91 in wafer 9 is covered by a protective film 12', and the entire area of the trench 90 of wafer 9 is filled with the protective film 12'.

硬化性樹脂膜12的硬化只要配合硬化性樹脂膜12之特性藉由公知方法進行即可。例如,於硬化性樹脂膜12為熱硬化性之情形時,藉由將硬化性樹脂膜12加熱而進行硬化,於硬化性樹脂膜12為能量線硬化性之情形時,藉由向硬化性樹脂膜12照射能量線而進行硬化。The curing of the curable resin film 12 can be carried out using known methods, taking into account the characteristics of the curable resin film 12. For example, when the curable resin film 12 is thermosetting, it is cured by heating the curable resin film 12; when the curable resin film 12 is energy-curing, it is cured by irradiating the curable resin film 12 with energy rays.

於硬化性樹脂膜12之熱硬化時,加熱溫度較佳為100℃至200℃,更佳為120℃至150℃。加熱時間較佳為0.5小時至5小時,更佳為1小時至3小時。 於硬化性樹脂膜12之能量線硬化時,能量線之照度較佳為180mW/cm 2至280mW/cm 2,能量線之光量較佳為450mJ/cm 2至1000mJ/cm 2During the thermocuring of the curable resin film 12, the heating temperature is preferably 100°C to 200°C, more preferably 120°C to 150°C. The heating time is preferably 0.5 hours to 5 hours, more preferably 1 hour to 3 hours. During the energy line curing of the curable resin film 12, the illuminance of the energy line is preferably 180 mW/ cm² to 280 mW/ cm² , and the light intensity of the energy line is preferably 450 mJ/ cm² to 1000 mJ/ cm² .

前述加工步驟中,將形成保護膜12’後之(具保護膜之晶圓102中之)晶圓9加以分割。藉此,晶圓9經單片化為晶片9’,如圖6C所示,獲得具保護膜之晶圓分割體103,該具保護膜之晶圓分割體103具備多個晶片9’、及設置於這些多個晶片9’的具有突起狀電極91之面9a’的未切斷而連在一起之(一片)保護膜12’。In the aforementioned processing steps, the wafer 9 (in the wafer 102 with protective film) after the protective film 12' is formed is diced. Thereby, the wafer 9 is monolithized into wafers 9', as shown in FIG6C, to obtain a wafer dicing body 103 with protective film. The wafer dicing body 103 with protective film has multiple wafers 9' and a protective film 12' that is not cut off and connected together on the surface 9a' of the multiple wafers 9' with protruding electrodes 91.

晶圓9之分割例如可藉由下述方式進行:使用研磨機等研削機構,將晶圓9中的與具有突起狀電極91之面9a為相反側之面(內面)9b加以研削。此時,自晶圓9的前述內面9b朝向前述面9a研削晶圓9直至研削面達到前述溝槽90為止(直至前述溝槽90出現為止)。藉由如此設定,晶圓9之厚度變薄,並且溝槽90成為分割部位而將晶圓9分割。晶圓9的前述內面9b之研削係進行至晶片9’之厚度成為目標值為止。The wafer 9 can be diced, for example, by using a grinding machine or similar grinding mechanism to grind the inner surface 9b of the wafer 9, which is opposite to the surface 9a with the protruding electrode 91. At this time, the wafer 9 is ground from the inner surface 9b toward the surface 9a until the grinding surface reaches the groove 90 (until the groove 90 appears). By this arrangement, the thickness of the wafer 9 becomes thinner, and the groove 90 becomes the dicing point, thus dividing the wafer 9. The grinding of the inner surface 9b of the wafer 9 continues until the thickness of the wafer 9' reaches the target value.

前述加工步驟中,繼而於切斷保護膜12’之前,於具保護膜之晶圓分割體103中的所有晶片9’的內面9b’貼附切割片8,自保護膜12’去掉支撐片11。藉此,如圖6D所示,獲得切割片積層體104,該切割片積層體104係將具保護膜之晶圓分割體103以其中的晶片9’朝向切割片8側設於切割片8的一面上而構成。In the aforementioned processing steps, before cutting the protective film 12', a dicing 8 is attached to the inner surface 9b' of all the wafers 9' in the wafer dicing 103 with the protective film, and the support sheet 11 is removed from the protective film 12'. Thus, as shown in FIG6D, a dicing stack 104 is obtained, which is formed by placing the wafers 9' in the wafer dicing 103 with the protective film on one side of the dicing 8.

切割片8亦可為公知者。例如,作為切割片8,可列舉:僅由基材所構成者;具備基材、及設置於前述基材的一面上之黏著劑層者。於使用具備前述基材及黏著劑層之切割片8之情形時,將黏著劑層貼合於晶片9’之內面9b’。The dicing wafer 8 may also be a known type. For example, the dicing wafer 8 may be composed solely of a substrate; or it may have a substrate and an adhesive layer disposed on one side of the aforementioned substrate. When using a dicing wafer 8 having the aforementioned substrate and adhesive layer, the adhesive layer is bonded to the inner surface 9b' of the wafer 9'.

再者,本說明書中,於考慮本實施形態之保護膜形成用片(例如圖2至圖3所示之保護膜形成用片1、圖4所示之保護膜形成用片2)、與前述切割片(例如圖6D所示之切割片8)兩者之情形時,將本實施形態之保護膜形成用片中的基材稱為「第一基材」,將前述切割片中的基材稱為「第二基材」,區分這些基材。Furthermore, in this specification, when considering both the protective film forming sheet of this embodiment (e.g., the protective film forming sheet 1 shown in Figures 2 and 3, and the protective film forming sheet 2 shown in Figure 4) and the aforementioned cutting sheet (e.g., the cutting sheet 8 shown in Figure 6D), the substrate in the protective film forming sheet of this embodiment is referred to as the "first substrate," and the substrate in the aforementioned cutting sheet is referred to as the "second substrate," thus distinguishing these substrates.

切割片8中的第二基材及前述黏著劑層皆可為任意公知者。 作為前述第二基材,可列舉與前述第一基材相同者。 作為前述黏著劑層,可列舉能量線硬化性或非硬化性者。 本說明書中,所謂「非硬化性」,意指不因加熱或能量線之照射等任何方法而硬化之性質。 Both the second substrate in the cutting disc 8 and the aforementioned adhesive layer can be any known material. The second substrate can be the same as the first substrate. The adhesive layer can be either heat-curing or non-curing. In this specification, "non-curing" means a property that does not harden due to heating or irradiation by energy beams.

於將具保護膜之晶圓分割體103貼附於切割片8之前,例如亦可於具保護膜之晶圓分割體103中,沿著晶片9’之集合體之輪廓、亦即相當於分割前之晶圓9的外周之部位,將支撐片11切斷。於對具保護膜之晶圓分割體103自該晶片9’側之上方朝下看而俯視時,保護膜12’超出於支撐片11之形狀的情形時,將保護膜12’的自支撐片11溢出之部分同時切斷。圖6D中,表示如此將支撐片11及保護膜12’切斷之情形。Before attaching the wafer dicing 103 with the protective film to the dicing die 8, for example, the support sheet 11 can be cut along the outline of the wafer dicing 103 with the protective film, that is, at the portion corresponding to the outer periphery of the wafer 9 before dicing. When the protective film 12' extends beyond the shape of the support sheet 11 when viewed from above the wafer 9', the portion of the protective film 12' that overflows from the support sheet 11 is simultaneously cut off. Figure 6D shows the situation in which the support sheet 11 and the protective film 12' are cut off in this way.

前述加工步驟中,繼而藉由清潔將保護膜12’的與晶片9’側為相反側之面12b’之表層部位去掉,藉此使突起狀電極91的上部露出。於如圖6A所示,突起狀電極91的頭頂部經硬化性樹脂膜12被覆之情形時,較佳為進行此種清潔處理。前述加工步驟中,藉由進一步將保護膜12’切斷,而如圖6E所示,獲得多個具保護膜之晶片105,該具保護膜之晶片105具備晶片9’、及設置於晶片9’之切斷後之保護膜120’。本說明書中,有時將「切斷後之保護膜」簡稱為「保護膜」。更具體而言,切斷後之保護膜120’係設於晶片9’的具有突起狀電極91之面9a’。In the aforementioned processing steps, the surface portion of the protective film 12' opposite to the wafer 9' is then removed by cleaning, thereby exposing the upper part of the protruding electrode 91. This cleaning is preferably performed when the top of the protruding electrode 91 is covered by the hardened resin film 12, as shown in FIG. 6A. In the aforementioned processing steps, by further cutting the protective film 12', multiple wafers 105 with protective films are obtained, as shown in FIG. 6E. Each wafer 105 with a protective film includes a wafer 9' and a cut protective film 120' disposed on the wafer 9'. In this specification, the "cut protective film" is sometimes simply referred to as the "protective film". More specifically, the protective film 120' after being cut is disposed on the surface 9a' of the chip 9' with protruding electrodes 91.

保護膜12’的前述面12b’之表層部位之清潔可藉由電漿照射等公知方法進行。The surface portion of the aforementioned surface 12b' of the protective film 12' can be cleaned by known methods such as plasma irradiation.

保護膜12’係沿著晶片9’之外周(換言之為側面)切斷。此時,較佳為沿著晶片9’之外周(側面)將填充於相鄰晶片9’間之保護膜12’切斷而分為兩個。藉由如此般設定,而於相鄰晶片9’各自之側面亦設有切斷後之保護膜120’,對於每一個晶片9’而言,該具有突起狀電極91之面9a’與四個側面的合計五個面經保護膜120’保護,故而於晶片9’中可獲得保護膜120’所帶來之明顯高的保護效果。The protective film 12' is cut along the outer periphery (in other words, the side) of the wafer 9'. Preferably, the protective film 12' filling the space between adjacent wafers 9' is cut along the outer periphery (side) of the wafer 9', dividing it into two parts. With this arrangement, a cut protective film 120' is also provided on the side of each adjacent wafer 9'. For each wafer 9', the five surfaces—the surface 9a' with the protruding electrode 91 and the four sides—are protected by the protective film 120', thus achieving a significantly higher level of protection within the wafer 9'.

保護膜12’可藉由公知方法切斷。例如,可使用切割刀等公知之切斷機構將保護膜12’切斷。The protective film 12' can be cut by known methods. For example, the protective film 12' can be cut using a known cutting mechanism such as a cutting knife.

前述加工步驟後,將所得之具保護膜之晶片105自切割片8扯離並拾取。 具保護膜之晶片105可藉由公知之方法拾取。 After the aforementioned processing steps, the resulting wafer 105 with the protective film is peeled off the dicing die 8 and picked up. The wafer 105 with the protective film can be picked up using known methods.

於使用具備前述黏著劑層之切割片8之情形時,可將具保護膜之晶片105自黏著劑層扯離並拾取。 於黏著劑層為硬化性之情形時,藉由在黏著劑層之硬化後拾取具保護膜之晶片105,而能夠更容易地拾取。 When using a cutting disc 8 with the aforementioned adhesive layer, the wafer 105 with the protective film can be peeled off from the adhesive layer and picked up. When the adhesive layer is hardened, picking up the wafer 105 with the protective film after the adhesive layer has hardened makes it easier to pick up.

到此為止,列舉前述加工步驟中為了切斷保護膜12’而使用切割片8之情形為例進行了說明,但有時如上文所說明,於晶片9’的內面9b’設置保護膜,進一步保護晶片9’。於該情形時,可使用下述保護膜形成用片來代替切割片8,該保護膜形成用片係具備支撐片,且於前述支撐片的一面上具備用以形成保護膜之保護膜形成膜而構成。此處,前述支撐片亦可具備基材及黏著劑層,於該情形時,於該黏著劑層的與基材側為相反側之面上設有前述保護膜形成膜。 於使用前述保護膜形成用片之情形時,將前述保護膜形成膜貼合於晶片9’的內面9b’。 Up to this point, the example of using a cutting blade 8 to cut the protective film 12' in the aforementioned processing steps has been given. However, as explained above, sometimes a protective film is provided on the inner surface 9b' of the wafer 9' to further protect the wafer 9'. In this case, a protective film forming sheet can be used instead of the cutting blade 8. This protective film forming sheet is composed of a support sheet, and a protective film forming film for forming the protective film is provided on one side of the support sheet. Here, the support sheet may also have a substrate and an adhesive layer. In this case, the protective film forming film is provided on the side of the adhesive layer opposite to the substrate side. When using the aforementioned protective film forming sheet, the protective film forming film is adhered to the inner surface 9b' of the wafer 9'.

再者,本說明書中,於考慮本實施形態之保護膜形成用片(例如圖2至圖3所示之保護膜形成用片1、圖4所示之保護膜形成用片2)、與具備前述保護膜形成膜之保護膜形成用片兩者之情形時,將本實施形態之保護膜形成用片稱為「第一保護膜形成用片」,將具備前述保護膜形成膜之保護膜形成用片稱為「第二保護膜形成用片」,區分這些保護膜形成用片。 進而,於該情形時,將本實施形態之保護膜形成用片中的支撐片(例如圖2至圖3所示之支撐片11、圖4所示之支撐片21)稱為「第一支撐片」,將具備前述保護膜形成膜之保護膜形成用片中的支撐片稱為「第二支撐片」,區分這些支撐片。關於支撐片所具備之黏著劑層亦同樣,將第一支撐片中的黏著劑層稱為「第一黏著劑層」,將第二支撐片中的黏著劑層稱為「第二黏著劑層」,區分這些黏著劑層。 進而,於該情形時,將使用本實施形態之保護膜形成用片而由前述硬化性樹脂膜形成之保護膜(例如圖6B等所示之保護膜12’)稱為「第一保護膜」,將由前述保護膜形成膜所形成之保護膜(例如設於晶片9’的內面9b’之保護膜)稱為「第二保護膜」,區分這些保護膜。 Furthermore, in this specification, when considering both the protective film forming sheet of this embodiment (e.g., protective film forming sheet 1 shown in Figures 2 and 3, and protective film forming sheet 2 shown in Figure 4) and the protective film forming sheet having the aforementioned protective film forming film, the protective film forming sheet of this embodiment is referred to as the "first protective film forming sheet," and the protective film forming sheet having the aforementioned protective film forming film is referred to as the "second protective film forming sheet," thus distinguishing these protective film forming sheets. Furthermore, in this case, the support sheets in the protective film forming sheet of this embodiment (e.g., support sheet 11 shown in Figures 2 and 3, and support sheet 21 shown in Figure 4) are referred to as "first support sheets," and the support sheets in the protective film forming sheet having the aforementioned protective film forming film are referred to as "second support sheets," thus distinguishing these support sheets. Similarly, regarding the adhesive layers provided by the support sheets, the adhesive layer in the first support sheet is referred to as "first adhesive layer," and the adhesive layer in the second support sheet is referred to as "second adhesive layer," thus distinguishing these adhesive layers. Furthermore, in this case, the protective film formed from the aforementioned curable resin film using the protective film forming sheet of this embodiment (e.g., the protective film 12' shown in FIG. 6B) is referred to as the "first protective film," and the protective film formed from the aforementioned protective film forming film (e.g., the protective film disposed on the inner surface 9b' of the wafer 9') is referred to as the "second protective film," thus distinguishing these protective films.

第二保護膜形成用片中的前述第二支撐片亦可與第一保護膜形成用片中的前述第一支撐片相同。The aforementioned second support sheet in the second protective film forming sheet may also be the same as the aforementioned first support sheet in the first protective film forming sheet.

第二保護膜形成用片中的前述保護膜形成膜可為硬化性及非硬化性的任一種。 硬化性之前述保護膜形成膜可為熱硬化性及能量線硬化性的任一種,亦可具有熱硬化性及能量線硬化性之雙方的特性。 非硬化性之保護膜形成膜在設置於(形成於)目標對象物(即晶圓)的階段以後,被視為保護膜。 The aforementioned protective film forming film in the second protective film forming sheet can be either curable or non-curable. The curable protective film forming film can be either thermosetting or energy-line curable, or it can possess characteristics of both thermosetting and energy-line curable. The non-curable protective film forming film is considered a protective film after the stage of setting (forming) on the target object (i.e., the wafer).

於前述加工步驟中使用具備硬化性之前述保護膜形成膜的第二保護膜形成用片之情形時,可藉由將第二保護膜形成用片(前述保護膜形成膜)貼附於晶片9’的內面9b’後,於任一階段中使保護膜形成膜硬化,而形成第二保護膜。另外,於將具保護膜之晶片105自前述第二支撐片扯離並拾取之前的階段中,沿著晶片9’的外周將保護膜形成膜或第二保護膜切斷。When a second protective film forming sheet with hardenability is used in the aforementioned processing steps, the second protective film can be formed by attaching the second protective film forming sheet (the aforementioned protective film forming film) to the inner surface 9b' of the wafer 9' and then hardening the protective film forming film at any stage. Alternatively, in the stage before the wafer 105 with the protective film is detached from the aforementioned second support sheet and picked up, the protective film forming film or the second protective film is cut along the outer periphery of the wafer 9'.

於使用第二保護膜形成用片之情形時,可於在其中的晶片9’之內面9b’進而具備切斷後之前述保護膜形成膜或第二保護膜的狀態下,將具保護膜之晶片105自第二支撐片扯離並拾取。 於第二支撐片具備硬化性之黏著劑層之情形時,藉由在黏著劑層之硬化後拾取具保護膜之晶片105,而能夠更容易地拾取。 When using a second protective film forming sheet, the wafer 105 with the protective film can be peeled off from the second support and picked up after the aforementioned protective film forming film or second protective film has been cut from the inner surface 9b' of the wafer 9'. When the second support sheet has a hardened adhesive layer, picking up the wafer 105 with the protective film after the adhesive layer has hardened makes it easier to pick up.

本實施形態之具保護膜之晶片的製造方法只要依序具有前述貼附步驟 硬化步驟及加工步驟,則不限定於上述製造方法(以下有時稱為「製造方法1」),亦可於上述製造方法(製造方法1)中變更、刪除或追加一部分構成。 The method for manufacturing a chip with a protective film in this embodiment is not limited to the above-mentioned manufacturing method (hereinafter sometimes referred to as "manufacturing method 1") as long as it sequentially includes the aforementioned attachment step , hardening step and processing step. A portion of the above-mentioned manufacturing method (manufacturing method 1) may be modified, deleted or added.

例如,到此為止是針對製造方法1中,針對在具有突起狀電極的面設有溝槽的晶圓貼附保護膜形成用片,並藉由晶圓之內面研削而將晶圓單片化為晶片之情形進行了說明,但亦可藉由使用未設有前述溝槽之晶圓,利用切割刀將此種晶圓切斷的所謂全切來將晶圓單片化為晶片。 另外,亦可使用未設有前述溝槽之晶圓,藉由雷射照射於該晶圓之內部預先設置成為分割起點之改質層,將設有該晶圓之片擴展,或者利用晶圓之內面研削時之衝擊,藉此將晶圓單片化為晶片。 這些變形例中,有時同時進行晶圓向晶片之分割(單片化)、與保護膜之切斷。 For example, this explanation has so far addressed manufacturing method 1, which involves attaching a protective film to a wafer with grooves on the surface of its protruding electrodes, and then monolithically forming the wafer into a chip by grinding the inner surface of the wafer. However, it is also possible to monolithically form a wafer into a chip by using a wafer without the aforementioned grooves and cutting it with a dicing blade—a process known as a full cut. Alternatively, a wafer without the aforementioned grooves can be used, and the wafer can be expanded by irradiating a modified layer pre-formed as a dicing starting point inside the wafer with a laser, or by utilizing the impact during grinding the inner surface of the wafer. In these variations, sometimes wafer-to-chip dicing (monolithography) and protective film cutting are performed simultaneously.

另外,亦可於製造方法1中,連續地進行完成保護膜形成用片之步驟與前述貼附步驟來代替於前述貼附步驟中使用預先準備之保護膜形成用片。更具體而言,製造方法1亦可於即將進行貼附步驟之前具有裁斷步驟,該裁斷步驟係將形成於支撐片的大致整個面之硬化性樹脂膜裁斷成與作為支撐片的第一區域而設想之形狀相同之形狀,以產生第二區域之方式去除多餘之硬化性樹脂膜,藉此完成保護膜形成用片。藉由使用連續地進行此種裁斷步驟及前述貼附步驟之裝置,而能夠利用同一生產線進行保護膜形成用片之完成與對晶圓之貼附。Alternatively, in manufacturing method 1, the steps of completing the protective film forming sheet and the aforementioned bonding step can be performed consecutively instead of using a pre-prepared protective film forming sheet in the aforementioned bonding step. More specifically, manufacturing method 1 may also include a cutting step just before the bonding step, in which the curing resin film formed on approximately the entire surface of the support sheet is cut into a shape identical to the shape conceived for the first region of the support sheet, thereby removing excess curing resin film to create a second region, thus completing the protective film forming sheet. By using an apparatus that continuously performs this cutting step and the aforementioned bonding step, the completion of the protective film forming sheet and the bonding to the wafer can be performed on the same production line.

圖7A至圖7E為用以示意性地說明本實施形態之具保護膜之晶片的製造方法之另一例(以下有時稱為「製造方法2」)之剖面圖。以下說明之製造方法2相當於在上述製造方法1中變更了一部分步驟之順序。Figures 7A to 7E are cross-sectional views illustrating another example of a method for manufacturing a chip with a protective film according to the present embodiment (hereinafter sometimes referred to as "manufacturing method 2"). The manufacturing method 2 described below is equivalent to manufacturing method 1 described above, but with a change in the order of some steps.

製造方法2中,首先藉由與製造方法1之情形相同之方法進行前述貼附步驟,如圖7A所示,製作具保護膜形成用片之晶圓101。 製造方法2中,亦與製造方法1之情形同樣地,能夠於支撐片11的第二區域112a上,抑制形成硬化性樹脂膜12之厚度增厚之區域。 In manufacturing method 2, the aforementioned attachment step is first performed using the same method as in manufacturing method 1, as shown in FIG. 7A, to fabricate a wafer 101 for forming a protective film. In manufacturing method 2, similarly to manufacturing method 1, it is possible to suppress the thickening of the hardened resin film 12 in the second region 112a of the support sheet 11.

於製造方法2之前述硬化步驟中,於硬化性樹脂膜12硬化之前,於具保護膜形成用片之晶圓101中,沿著晶圓9的外周將支撐片11及硬化性樹脂膜12切斷。於支撐片11為黏著片或具有治具用接著劑層之支撐片之情形時,亦可於支撐片11及硬化性樹脂膜12之切斷前,將支撐片11的周緣部貼附於環形框架等治具(圖示省略)。另外,亦可將支撐片11及硬化性樹脂膜12切斷,或者不切斷而自硬化性樹脂膜12去掉支撐片11。In the curing step described earlier in manufacturing method 2, before the curable resin film 12 is cured, the support sheet 11 and the curable resin film 12 are cut along the outer periphery of the wafer 9 on the wafer 101 with the protective film forming sheet. When the support sheet 11 is an adhesive sheet or a support sheet with a jig adhesive layer, the periphery of the support sheet 11 can be attached to a jig such as a ring frame (not shown) before the support sheet 11 and the curable resin film 12 are cut. Alternatively, the support sheet 11 can be cut and the curable resin film 12 can be removed from the curable resin film 12 without cutting.

於製造方法2的前述硬化步驟中,利用與製造方法1之硬化步驟之情形相同的方法使貼附於晶圓9後之硬化性樹脂膜12硬化,藉此如圖7B所示,於晶圓9的前述面9a形成保護膜12’。藉此,可獲得與製造方法1之情形相同的構成之具保護膜之晶圓102。其中,與製造方法1之情形不同,具保護膜之晶圓102中的保護膜12’於與晶圓9側為相反側之面12b’,進而具備切斷後之支撐片11,或者不具備支撐片11。圖7B中,表示不具備支撐片11之情形。In the aforementioned curing step of manufacturing method 2, the curable resin film 12 attached to the wafer 9 is cured using the same method as in the curing step of manufacturing method 1, thereby forming a protective film 12' on the aforementioned surface 9a of the wafer 9, as shown in FIG. 7B. This yields a wafer 102 with a protective film, having the same configuration as in manufacturing method 1. However, unlike in manufacturing method 1, the protective film 12' in the wafer 102 with the protective film may or may not have a cut support sheet 11 on the surface 12b' opposite to the wafer 9. FIG. 7B shows the case where the support sheet 11 is not present.

於製造方法2之前述加工步驟中,於分割晶圓9之前,藉由清潔將保護膜12’的與晶圓9側為相反側之面12b’之表層部位去掉,藉此使突起狀電極91的上部露出,進而,於清潔後的保護膜12’的前述面12b’貼附與支撐片11不同之背面研磨帶7。In the processing steps described above in manufacturing method 2, before dicing the wafer 9, the surface portion of the protective film 12', which is opposite to the side of the wafer 9, is removed by cleaning, thereby exposing the upper part of the protruding electrode 91. Then, a back polishing tape 7, which is different from the support sheet 11, is attached to the aforementioned surface 12b' of the cleaned protective film 12'.

於製造方法2中,保護膜12’的前述面12b’之表層部位之清潔可利用與製造方法1之情形相同之方法進行。In manufacturing method 2, the cleaning of the surface portion of the aforementioned surface 12b' of the protective film 12' can be carried out using the same method as in manufacturing method 1.

於製造方法2之前述貼附步驟中,如上文所說明,硬化性樹脂膜12之厚度增厚之區域的形成得到抑制,因而本步驟中,保護膜12’自晶圓9的外周之溢出得到抑制。因此,能夠於保護膜12’的前述面12b’穩定地貼附背面研磨帶7。In the attachment step described earlier in manufacturing method 2, as explained above, the formation of areas where the thickness of the hardened resin film 12 increases is suppressed. Therefore, in this step, the overflow of the protective film 12' from the outer periphery of the wafer 9 is suppressed. Thus, the back surface polishing tape 7 can be stably attached to the aforementioned surface 12b' of the protective film 12'.

於製造方法2之前述加工步驟中,繼而將形成保護膜12’後之(具保護膜之晶圓102中的)晶圓9分割。藉此,晶圓9經單片化為晶片9’,如圖7C所示,獲得具保護膜之晶圓分割體103’,該具保護膜之晶圓分割體103’具備多個晶片9’、及設置於這些多個晶片9’的具有突起狀電極91之面9a’的未切斷而連在一起的(一片)保護膜12’。 具保護膜之晶圓分割體103’就藉由清潔而保護膜12’之厚度較最初更薄之方面而言,與製造方法1中的具保護膜之晶圓分割體103不同。 In the preceding processing steps of manufacturing method 2, the wafer 9 (in the protective film wafer 102) after the protective film 12' is formed is then diced. Thereby, the wafer 9 is monolithically converted into wafers 9', as shown in FIG. 7C, resulting in a protective film wafer dicing 103'. This protective film wafer dicing 103' has multiple wafers 9' and an uncut protective film 12' connected together on the surfaces 9a' of these multiple wafers 9' with protruding electrodes 91. The protective film wafer dicing 103' differs from the protective film wafer dicing 103' in that the thickness of the protective film 12' is thinner than initially achieved through cleaning.

於製造方法2中,晶圓9之分割可利用與製造方法1之情形相同之方法進行。In manufacturing method 2, the dicing of wafer 9 can be performed using the same method as in manufacturing method 1.

於製造方法2之前述加工步驟中,繼而於切斷保護膜12’之前,於具保護膜之晶圓分割體103’中的所有晶片9’的前述內面9b’貼附切割片8,自保護膜12’去掉背面研磨帶7。藉此,如圖7D所示,獲得切割片積層體104’,該切割片積層體104’係將具保護膜之晶圓分割體103’以其中之晶片9’朝向切割片8側設置於切割片8的一面上而構成。In the preceding processing steps of manufacturing method 2, prior to cutting the protective film 12', a dicing 8 is attached to the inner surface 9b' of all the wafers 9' in the wafer dicing 103' with the protective film, and the back-side polishing tape 7 is removed from the protective film 12'. Thus, as shown in FIG7D, a dicing stack 104' is obtained, which is formed by placing the wafer dicing 103' with the protective film and the wafers 9' facing the dicing 8 on one side of the dicing 8.

於製造方法2之前述加工步驟中,繼而切斷保護膜12’,藉此如圖7E所示,獲得與製造方法1之情形相同之構成的具保護膜之晶片105。In the processing steps described earlier in manufacturing method 2, the protective film 12' is then cut off, thereby obtaining a wafer 105 with a protective film having the same structure as in manufacturing method 1, as shown in FIG7E.

於製造方法2中,保護膜12’之切斷可利用與製造方法1之情形相同之方法進行。 於製造方法2中,亦由於與製造方法1之情形相同之原因,於沿著晶片9’的外周(換言之為側面)切斷保護膜12’時,較佳為沿著晶片9’的外周(側面)將填充於相鄰晶片9’間之保護膜12’切斷而分為兩個。 In manufacturing method 2, the cutting of the protective film 12' can be performed using the same method as in manufacturing method 1. In manufacturing method 2, for the same reasons as in manufacturing method 1, when cutting the protective film 12' along the outer periphery (in other words, the side surface) of the wafer 9', it is preferable to cut the protective film 12' filling the space between adjacent wafers 9' into two pieces along the outer periphery (side surface) of the wafer 9'.

製造方法2之前述加工步驟後,利用與製造方法1之情形相同之方法,將所得之具保護膜之晶片105自切割片8扯離並拾取。After the aforementioned processing steps in manufacturing method 2, the resulting wafer 105 with a protective film is peeled off from the dicing wafer 8 and picked up using the same method as in manufacturing method 1.

於製造方法2之前述加工步驟中,亦可與製造方法1之情形同樣地使用未設有前述溝槽之晶圓,將該晶圓單片化為晶片。 另外,製造方法2亦可與製造方法1之情形同樣地於即將進行前述貼附步驟之前具有前述裁斷步驟。 In the preceding processing steps of manufacturing method 2, a wafer without the aforementioned grooves can also be used, similarly to manufacturing method 1, to monolithize the wafer into a chip. Furthermore, manufacturing method 2 can also include the aforementioned cutting step, similar to manufacturing method 1, just before the aforementioned mounting step.

於製造方法1及製造方法2之任一情形,均能夠藉由將上述獲得之具保護膜之晶片105於其中的突起狀電極91之頭頂部覆晶連接於電路基板上的連接墊部,而製作基板裝置(圖示省略)。此時,具保護膜之晶片105連接於電路基板的電路形成面。例如,若為使用半導體晶圓作為晶圓之情形時,則作為前述基板裝置,可列舉半導體裝置。 [實施例] In either manufacturing method 1 or manufacturing method 2, a substrate device (not shown) can be manufactured by flip-chip bonding the top of the protruding electrode 91 of the obtained protective film wafer 105 to a bonding pad on a circuit substrate. In this case, the protective film wafer 105 is connected to the circuit formation surface of the circuit substrate. For example, if a semiconductor wafer is used as the wafer, a semiconductor device can be cited as an example of the aforementioned substrate device. [Example]

以下,藉由具體實施例對本發明加以詳細說明。然而,本發明不受以下所示之實施例之任何限定。The present invention will now be described in detail with reference to specific embodiments. However, the present invention is not limited to the embodiments shown below.

將用於製造以下所示之組成物(III)的原料顯示於以下。 聚合物成分(A)-1:具有下述式(i)-1、式(i)-2及式(i)-3所表示之構成單元的聚乙烯縮丁醛(積水化學工業公司製造之「S-lec BL-10」,重量平均分子量為25000,玻璃轉移溫度為59℃)。 The raw materials used to manufacture composition (III) shown below are shown. Polymer component (A)-1: Polyvinyl butyral (S-lec BL-10 manufactured by Sekisui Chemicals Co., Ltd., with a weight average molecular weight of 25,000 and a glass transition temperature of 59°C) having the constituent units represented by formulas (i)-1, (i)-2 and (i)-3.

[化1] (式中,l 1為約28,m 1為1至3,n 1為68至74之整數)。 [Chemistry 1] (In the formula, l1 is approximately 28, m1 is 1 to 3, and n1 is an integer from 68 to 74).

環氧樹脂(B1)-1:液狀改質雙酚A型環氧樹脂(DIC公司製造之「Epiclon EXA-4850-150」,分子量為900,環氧當量為450g/eq)。 環氧樹脂(B1)-4:二環戊二烯型環氧樹脂(DIC公司製造之「Epiclon HP-7200HH」,環氧當量為254g/eq至264g/eq)。 熱硬化劑(B2)-1:鄰甲酚型酚醛清漆樹脂(DIC公司製造之「Phenolite KA-1160」)。 硬化促進劑(C)-1:2-苯基-4,5-二羥基甲基咪唑(四國化成工業公司製造之「Curezol 2PHZ-PW」)。 填充材(D)-1:經環氧基修飾之球狀二氧化矽(Admatechs公司製造之「Admanano YA050C-MKK」,平均粒徑為50nm)。 添加劑(I)-1:流變控制劑(多羥基羧酸酯,BYK公司製造之「BYK-R606」)。 Epoxy Resin (B1)-1: Liquid modified bisphenol A type epoxy resin (DIC's "Epiclon EXA-4850-150", molecular weight 900, epoxy equivalent 450 g/eq). Epoxy Resin (B1)-4: Dicyclopentadiene type epoxy resin (DIC's "Epiclon HP-7200HH", epoxy equivalent 254 g/eq to 264 g/eq). Thermosetting Agent (B2)-1: o-cresol type phenolic varnish resin (DIC's "Phenolite KA-1160"). Hardening accelerator (C)-1: 2-Phenyl-4,5-dihydroxymethylimidazol (Curezol 2PHZ-PW manufactured by Shikoku Chemical Industry Co., Ltd.). Filler (D)-1: Epoxy-modified spherical silica (Admanano YA050C-MKK manufactured by Admatechs, with an average particle size of 50 nm). Additive (I)-1: Rheology control agent (polyhydroxycarboxylic acid ester, BYK-R606 manufactured by BYK Corporation).

[實施例1] 使聚合物成分(A)-1(100質量份)、環氧樹脂(B1)-1(350質量份)、環氧樹脂(B1)-4(270質量份)、熱硬化劑(B2)-1(190質量份)、硬化促進劑(C)-1(2質量份)、填充材(D)-1(90質量份)及添加劑(I)-1(9質量份)溶解或分散於甲基乙基酮,於23℃攪拌,藉此獲得溶劑以外之所有成分之合計濃度為45質量%的組成物(III)作為熱硬化性樹脂膜形成用組成物。再者,此處所示之溶劑以外之成分之調配量全部為不含溶劑之目標物之調配量。 [Example 1] Polymer component (A)-1 (100 parts by mass), epoxy resin (B1)-1 (350 parts by mass), epoxy resin (B1)-4 (270 parts by mass), thermosetting agent (B2)-1 (190 parts by mass), curing accelerator (C)-1 (2 parts by mass), filler (D)-1 (90 parts by mass), and additive (I)-1 (9 parts by mass) are dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to obtain composition (III) with a total concentration of 45% by mass of all components other than the solvent, which is used as a composition for thermosetting resin film formation. Furthermore, the amounts of components other than the solvent shown here are all solvent-free target amounts.

使用聚對苯二甲酸乙二酯製膜之單面經聚矽氧處理進行了剝離處理之剝離膜(琳得科公司製造之「SP-PET381031」,厚度38μm),於該剝離膜之前述剝離處理面塗敷上述所得之組成物(III),於120℃加熱乾燥2分鐘,藉此形成厚度30μm之熱硬化性樹脂膜。 繼而,將該熱硬化性樹脂膜與前述剝離膜一併加工為直徑170mm之圓形,藉此製作具剝離膜之試片。 將所得之試片之露出面(換言之,與具備剝離膜之側為相反側之面)整個面與透明的帶狀之背面研磨帶(琳得科公司製造之「E-8180」)的表面貼合,藉此獲得積層物。 所得之積層物係將背面研磨帶、試片(熱硬化性樹脂膜)及剝離膜依序於這些層之厚度方向積層而構成。 A single-sided polysiloxane-treated release liner (Lintec Corporation's "SP-PET381031", 38 μm thick) was prepared using polyethylene terephthalate (PET). The aforementioned composition (III) was then coated onto the previously treated surface of this release liner and dried at 120°C for 2 minutes to form a 30 μm thick thermosetting resin film. Subsequently, this thermosetting resin film and the aforementioned release liner were combined and processed into a 170 mm diameter circle to create a test piece with the release liner. The exposed surface of the obtained specimen (in other words, the side opposite to the side with the release film) is bonded to the surface of a transparent strip-shaped backing abrasive tape (Lintec Corporation's "E-8180") to obtain a laminate. The resulting laminate is formed by sequentially depositing the backing abrasive tape, the specimen (thermosetting resin film), and the release film along the thickness direction of these layers.

[實施例2] 將熱硬化性樹脂膜之厚度變更為45μm,將貼合之背面研磨帶變更為琳得科公司製造之「E-8510HR」,除此以外與實施例1同樣地獲得積層物。 [Example 2] The thickness of the thermosetting resin film was changed to 45 μm, and the backing abrasive tape was changed to "E-8510HR" manufactured by Lintec Corporation. Otherwise, the deposit was obtained in the same manner as in Example 1.

進而,除了將厚度設為50μm而非45μm的方面以外,另製作20片與上述相同之熱硬化性樹脂膜,將這些熱硬化性樹脂膜積層並裁斷,藉此獲得厚度1mm、直徑25mm之圓板狀之試片。使用黏彈性測定裝置(Anton Paar公司製造之「MCR301」)對前述試片進行黏彈性測定,測定Gc1及Gc300,算出X值,結果如下。 Gc1=115000Pa。 Gc300=3900Pa。 X值=29。 Furthermore, aside from setting the thickness to 50 μm instead of 45 μm, 20 additional thermosetting resin films identical to those described above were fabricated. These thermosetting resin films were laminated and cut to obtain circular plate-shaped specimens with a thickness of 1 mm and a diameter of 25 mm. The viscoelasticity of these specimens was measured using a viscoelasticity measuring device (MCR301 manufactured by Anton Paar), measuring Gc1 and Gc300, and calculating the X-value. The results are as follows: Gc1 = 115000 Pa. Gc300 = 3900 Pa. X-value = 29.

藉由以下順序評價上述所得之積層物中的熱硬化性樹脂膜對溝槽之填充性,結果為「A」。 (1)半導體晶片製作用晶圓之準備 作為半導體晶片製作用晶圓,使用將分割預定線加以半切之12吋之矽晶圓(厚度750μm)。前述矽晶圓之半切部、亦即溝槽之寬度為60μm,溝槽之深度為230μm。 (2)評價方法 自前述積層物去掉剝離膜,將藉此露出之熱硬化性樹脂膜之表面(露出面)以如下條件一邊按壓一邊貼附於半導體晶片製作用晶圓之半切形成面。 ·貼附裝置:全自動貼合機(琳得科公司製造,製品名「RAD-3510」)。 ·輥壓力:0.5MPa。 ·輥高度:-400μm。 ·貼附速度:5mm/sec。 ·貼附溫度:90℃。 繼而,將背面研磨帶自熱硬化性樹脂膜剝離後,將貼附有熱硬化性樹脂膜之半導體晶片製作用晶圓於130℃加熱4小時,藉此使熱硬化性樹脂膜硬化而形成保護膜。繼而,將半導體晶片製作用晶圓自該半切形成面向內面於半切部(溝槽)切斷,使用光學顯微鏡(Keyence公司製造之「VHX-1000」),評價保護膜對半切部(溝槽)之填充性。填充性之評價基準如下。 S:保護膜之形狀未見變形,填充性最良好。 A:於溝槽之開口部附近,保護膜之形狀可見稍許變形,但填充性良好。 B:填充性不良。 [產業可利用性] The trench filling performance of the thermosetting resin film in the aforementioned laminate was evaluated in the following order, and the result was "A". (1) Preparation of the semiconductor wafer fabrication wafer A 12-inch silicon wafer (750 μm thick) with pre-defined dicing lines was used as the semiconductor wafer fabrication wafer. The width of the diced portion of the aforementioned silicon wafer, i.e., the trench, was 60 μm, and the trench depth was 230 μm. (2) Evaluation method After removing the release film from the aforementioned laminate, the exposed surface of the thermosetting resin film (exposed surface) was pressed and attached to the diced surface of the semiconductor wafer under the following conditions. • Lamination Device: Fully automatic laminator (manufactured by Lintec Corporation, product name "RAD-3510"). • Roller Pressure: 0.5MPa. • Roller Height: -400μm. • Lamination Speed: 5mm/sec. • Lamination Temperature: 90℃. Subsequently, after peeling the back-side grinding tape from the thermosetting resin film, the semiconductor wafer with the thermosetting resin film attached is heated at 130℃ for 4 hours, thereby hardening the thermosetting resin film to form a protective film. Next, the semiconductor wafer was cut inwards from the dicing surface at the dicing portion (groove). Using an optical microscope (Keyence VHX-1000), the filling performance of the protective film at the dicing portion (groove) was evaluated. The evaluation criteria for filling performance are as follows: S: No deformation of the protective film shape was observed; the filling performance is the best. A: Slight deformation of the protective film shape was observed near the opening of the groove, but the filling performance is good. B: Poor filling performance. [Industry Applicability]

本發明能夠用於製造具有突起狀電極且於具有前述突起狀電極之面具備保護膜的晶片等。此種具備保護膜之晶片藉由覆晶連接於電路基板上的連接墊,而適於製作基板裝置。This invention can be used to manufacture chips with protruding electrodes and a protective film on the surface of the protruding electrodes. Such chips with protective films are connected to the circuit substrate by flip-chip bonding pads, making them suitable for manufacturing substrate devices.

1,2:保護膜形成用片 7:背面研磨帶 8:切割片 9:晶圓 9’:晶片 9a:晶圓的具有突起狀電極之面(電路面) 9a’:晶片的具有突起狀電極之面(電路面) 9b:晶圓的內面 9b’:晶片的內面 11,21:支撐片 11a,21a:支撐片的一面(支撐片的硬化性樹脂膜側之面) 12,62:硬化性樹脂膜 12’:保護膜 12a:硬化性樹脂膜的與支撐片側為相反側之面 12a’:保護膜的與支撐片側為相反側之面 12b’:保護膜的與晶片側為相反側之面 13:治具用接著劑層 90:晶圓之溝槽 91:晶圓之突起狀電極 101:具保護膜形成用片之晶圓 102:具保護膜之晶圓 103,103’:具保護膜之晶圓分割體 104,104’:切割片積層體 105:具保護膜之晶片 111a,211a:支撐片的一面中之第一區域 112a,212a:支撐片的一面中之第二區域 120’:切斷後之保護膜 620:未貼附於晶圓之晶圓的附近之區域 621:硬化性樹脂膜的貼附於晶圓之區域 622:周緣部附近之區域 D 11,D 21:支撐片之寬度之最大值(直徑) D 12:硬化性樹脂膜之寬度之最大值(直徑) L 1:連結第一區域的外周部之一點與支撐片的外周部之一點的線段之最小值 L 2:相鄰兩個硬化性樹脂膜間之距離 T 12:硬化性樹脂膜之厚度 1,2: Protective film forming sheet; 7: Backside grinding belt; 8: Dicing disc; 9: Wafer; 9': Wafer; 9a: Surface of the wafer with protruding electrodes (electrical surface); 9a': Surface of the wafer with protruding electrodes (electrical surface); 9b: Inner surface of the wafer; 9b': Inner surface of the wafer; 11,21: Support sheet; 11a,21a: One side of the support sheet (the side of the support sheet with the hardened resin film); 12,62: Cured resin film; 12': Protective film; 12a: Surface of the cured resin film opposite to the support sheet side; 12a': Surface of the protective film opposite to the support sheet side; 12b': Surface of the protective film opposite to the wafer side; 13: Fixture adhesive layer; 90: Wafer trench; 91: Wafer protrusion electrode; 101: Wafer with protective film forming layer; 102: Wafer with protective film; 103,103' : Wafer dicings with protective films 104, 104': Divided wafer stack 105: Wafers with protective films 111a, 211a: First region on one side of the support sheet 112a, 212a: Second region on one side of the support sheet 120': Protective film after cutting 620: Region near the wafer not attached to the wafer 621: Region on the wafer with a hardened resin film attached 622: Region near the periphery D 11 , D21 : Maximum width (diameter) of the support plate; D12 : Maximum width (diameter) of the cured resin film; L1 : Minimum value of the line segment connecting a point on the outer periphery of the first region to a point on the outer periphery of the support plate; L2 : Distance between two adjacent cured resin films; T12 : Thickness of the cured resin film.

[圖1]為用以示意性地說明本發明所欲解決之課題的剖面圖。 [圖2]為示意性地表示本發明之一實施形態之保護膜形成用片之一例的平面圖。 [圖3]為圖2所示之保護膜形成用片之於I-I線之剖面圖。 [圖4]為示意性地表示本發明之一實施形態之保護膜形成用片之另一例的平面圖。 [圖5]為示意性地表示本發明之一實施形態之保護膜形成用片之進而另一例的平面圖。 [圖6A]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之一例的剖面圖。 [圖6B]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之一例的剖面圖。 [圖6C]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之一例的剖面圖。 [圖6D]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之一例的剖面圖。 [圖6E]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之一例的剖面圖。 [圖7A]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之另一例的剖面圖。 [圖7B]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之另一例的剖面圖。 [圖7C]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之另一例的剖面圖。 [圖7D]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之另一例的剖面圖。 [圖7E]為用以示意性地說明本發明之一實施形態之具保護膜之晶片的製造方法之另一例的剖面圖。 [Figure 1] is a cross-sectional view schematically illustrating the problem to be solved by the present invention. [Figure 2] is a plan view schematically showing an example of a protective film forming wafer according to an embodiment of the present invention. [Figure 3] is a cross-sectional view of the protective film forming wafer shown in Figure 2 along line I-I. [Figure 4] is a plan view schematically showing another example of a protective film forming wafer according to an embodiment of the present invention. [Figure 5] is a plan view schematically showing yet another example of a protective film forming wafer according to an embodiment of the present invention. [Figure 6A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 6B] is a cross-sectional view schematically illustrating an example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 6C] is a cross-sectional view illustrating one example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 6D] is a cross-sectional view illustrating one example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 6E] is a cross-sectional view illustrating one example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 7A] is a cross-sectional view illustrating another example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 7B] is a cross-sectional view illustrating another example of a method for manufacturing a wafer with a protective film according to an embodiment of the present invention. [Figure 7C] is a cross-sectional view illustrating another example of a method for manufacturing a wafer with a protective film according to one embodiment of the present invention. [Figure 7D] is a cross-sectional view illustrating another example of a method for manufacturing a wafer with a protective film according to one embodiment of the present invention. [Figure 7E] is a cross-sectional view illustrating another example of a method for manufacturing a wafer with a protective film according to one embodiment of the present invention.

1:保護膜形成用片 11:支撐片 11a:支撐片的一面(支撐片的硬化性樹脂膜側之面) 12:硬化性樹脂膜 12a:硬化性樹脂膜的與支撐片側為相反側之面 D 11:支撐片之寬度之最大值(直徑) D 12:硬化性樹脂膜之寬度之最大值(直徑) 111a:支撐片的一面中之第一區域 112a:支撐片的一面中之第二區域 1: Protective film forming sheet; 11: Support sheet; 11a: One side of the support sheet (the side of the support sheet facing the curing resin film); 12: Curing resin film; 12a: The side of the curing resin film opposite to the support sheet side; D; 11 : Maximum width (diameter) of the support sheet; D; 12 : Maximum width (diameter) of the curing resin film; 111a: First region of one side of the support sheet; 112a: Second region of one side of the support sheet.

Claims (16)

一種保護膜形成用片,係具備:支撐片;以及設置於前述支撐片的一面上的硬化性樹脂膜;前述硬化性樹脂膜為用以貼附於晶圓的具有突起狀電極之面並進行硬化,藉此於前述晶圓的前述面形成保護膜;前述支撐片於前述一面中,具有設有前述硬化性樹脂膜之第一區域、及包圍前述第一區域且未設有前述硬化性樹脂膜之第二區域;以溫度90℃、頻率1Hz之條件使直徑25mm、厚度1mm之前述硬化性樹脂膜之試片產生應變,測定前述試片之儲存彈性模數,於將前述試片之應變為1%時的前述試片之儲存彈性模數設為Gc1,將前述試片之應變為300%時的前述試片之儲存彈性模數設為Gc300時,藉由下述式:X=Gc1/Gc300所算出之X值為19以上至未達10000。A protective film forming sheet comprises: a support sheet; and a curable resin film disposed on one side of the support sheet; the curable resin film is used to adhere to and cure the surface of a wafer with protruding electrodes, thereby forming a protective film on the surface of the wafer; the support sheet has a first region with the curable resin film disposed thereon on the first side, and a second region surrounding the first region without the curable resin film; the film is formed at a temperature of 90°C and a frequency of... A strain was induced in a specimen of the aforementioned hardened resin film with a diameter of 25 mm and a thickness of 1 mm under a 1 Hz condition. The storage elastic modulus of the specimen was measured. When the strain of the specimen was 1%, the storage elastic modulus of the specimen was set as Gc1. When the strain of the specimen was 300%, the storage elastic modulus of the specimen was set as Gc300. The value of X calculated by the following formula: X=Gc1/Gc300 was 19 or more but less than 10000. 如請求項1所記載之保護膜形成用片,其中前述硬化性樹脂膜之厚度為25μm以上。The protective film forming sheet as described in claim 1, wherein the thickness of the aforementioned hardened resin film is 25 μm or more. 如請求項1或2所記載之保護膜形成用片,其中前述硬化性樹脂膜之寬度之最大值為140mm至150mm。The protective film forming sheet as described in claim 1 or 2, wherein the maximum width of the aforementioned hardened resin film is 140 mm to 150 mm. 如請求項1或2所記載之保護膜形成用片,其中前述硬化性樹脂膜之寬度之最大值為190mm至200mm。The protective film forming sheet as described in claim 1 or 2, wherein the maximum width of the aforementioned hardened resin film is 190 mm to 200 mm. 如請求項1或2所記載之保護膜形成用片,其中前述硬化性樹脂膜之寬度之最大值為290mm至300mm。The protective film forming sheet as described in claim 1 or 2, wherein the maximum width of the aforementioned hardened resin film is 290 mm to 300 mm. 如請求項1或2所記載之保護膜形成用片,其中前述硬化性樹脂膜之寬度之最大值為440mm至450mm。The protective film forming sheet as described in claim 1 or 2, wherein the maximum width of the aforementioned hardened resin film is 440 mm to 450 mm. 如請求項1或2所記載之保護膜形成用片,其中前述支撐片為圓形。The protective film forming sheet as described in claim 1 or 2, wherein the aforementioned support sheet is circular. 如請求項7所記載之保護膜形成用片,其中前述支撐片為黏著片,或者沿著前述支撐片的外周部具有治具用接著劑層。As described in claim 7, the protective film forming sheet is an adhesive sheet, or has a jig adhesive layer along the outer periphery of the aforementioned support sheet. 如請求項1或2所記載之保護膜形成用片,其中前述支撐片為剝離膜。The protective film forming sheet as described in claim 1 or 2, wherein the aforementioned support sheet is a peeling film. 如請求項1或2所記載之保護膜形成用片,其中於前述晶圓的前述面形成有成為前述晶圓的分割部位之溝槽。The protective film forming sheet as described in claim 1 or 2, wherein a groove is formed on the aforementioned surface of the aforementioned wafer to serve as a dicing portion of the aforementioned wafer. 一種具保護膜之晶片的製造方法,係具有:貼附步驟,一邊將如請求項1至10中任一項所記載之保護膜形成用片中的前述硬化性樹脂膜加熱,一邊貼附於晶圓的具有突起狀電極之面;硬化步驟,使貼附後之前述硬化性樹脂膜硬化,藉此於前述晶圓的前述面形成保護膜;以及加工步驟,將形成前述保護膜後之前述晶圓分割,切斷前述保護膜,藉此獲得具保護膜之晶片,前述具保護膜之晶片具備晶片、及設置於前述晶片之切斷後之前述保護膜。A method for manufacturing a wafer with a protective film includes: an attachment step, in which a curable resin film in a protective film forming wafer as described in any one of claims 1 to 10 is attached to a surface of a wafer having protruding electrodes while being heated; a curing step, in which the attached curable resin film is cured to form a protective film on the aforementioned surface of the wafer; and a processing step, in which the aforementioned wafer after the formation of the protective film is diced and the aforementioned protective film is cut to obtain a wafer with a protective film, wherein the wafer with a protective film has a wafer and the aforementioned protective film disposed on the diced wafer. 如請求項11所記載之具保護膜之晶片的製造方法,其中使用前述面之俯視時之面積相對於前述硬化性樹脂膜的朝向前述晶圓之貼附面之面積為同等以上之晶圓作為前述晶圓;於前述貼附步驟中,將前述硬化性樹脂膜的前述貼附面之整個面貼附於前述晶圓的前述面。As described in claim 11, in the method for manufacturing a wafer with a protective film, a wafer is used as the wafer whose area when viewed from above is equal to or greater than the area of the surface of the hardened resin film facing the wafer; in the aforementioned attachment step, the entire surface of the aforementioned surface of the hardened resin film is attached to the aforementioned surface of the wafer. 如請求項11所記載之具保護膜之晶片的製造方法,其中於前述晶圓的前述面,形成有成為前述晶圓的分割部位之溝槽;於前述貼附步驟中,於朝向前述晶圓的前述面貼附前述硬化性樹脂膜時,將前述硬化性樹脂膜填充於前述溝槽。As described in claim 11, in the method for manufacturing a wafer with a protective film, a groove is formed on the aforementioned surface of the aforementioned wafer to form a segmentation portion of the aforementioned wafer; in the aforementioned attachment step, when the aforementioned hardened resin film is attached to the aforementioned surface facing the aforementioned wafer, the aforementioned hardened resin film is filled into the aforementioned groove. 如請求項11所記載之具保護膜之晶片的製造方法,其中於前述貼附步驟中,使用輥將前述硬化性樹脂膜貼附於前述晶圓的前述面。The method for manufacturing a wafer with a protective film as described in claim 11, wherein in the aforementioned attachment step, a roller is used to attach the aforementioned hardened resin film to the aforementioned surface of the aforementioned wafer. 一種積層物,係藉由下述方式獲得:於剝離膜的剝離處理面形成熱硬化性樹脂膜,將前述熱硬化性樹脂膜與前述剝離膜一併加工為圓形,將與具備前述剝離膜之側為相反側之面之整個面與帶狀之背面研磨帶的表面貼合;以溫度90℃、頻率1Hz之條件使直徑25mm、厚度1mm之前述熱硬化性樹脂膜之試片產生應變,測定前述試片之儲存彈性模數,於將前述試片之應變為1%時的前述試片之儲存彈性模數設為Gc1,將前述試片之應變為300%時的前述試片之儲存彈性模數設為Gc300時,藉由下述式:X=Gc1/Gc300所算出之X值為19以上至未達10000。A deposit is obtained by: forming a thermosetting resin film on the peeling surface of a peeling membrane; processing the thermosetting resin film and the peeling membrane together into a circular shape; bonding the entire surface of the surface opposite to the side having the peeling membrane to the surface of a strip-shaped back abrasive belt; and molding the aforementioned thermosetting resin film, with a diameter of 25 mm and a thickness of 1 mm, at a temperature of 90°C and a frequency of 1 Hz. The test piece of the chemical resin film exhibits strain, and the storage elastic modulus of the test piece is measured. When the strain of the test piece is 1%, the storage elastic modulus of the test piece is set as Gc1, and when the strain of the test piece is 300%, the storage elastic modulus of the test piece is set as Gc300. The value of X calculated by the following formula: X=Gc1/Gc300 is 19 or more but less than 10000. 一種積層物,係具備:剝離膜;設置於前述剝離膜的一個剝離處理面的熱硬化性樹脂膜;以及背面研磨帶,設置於前述熱硬化性樹脂膜的與前述剝離膜側為相反側之面;並且,前述剝離膜之平面形狀與前述熱硬化性樹脂膜之平面形狀均為圓形;前述剝離膜與前述熱硬化性樹脂膜於這些膜之徑向上,外周部的位置相互一致地配置;前述背面研磨帶為帶狀;以溫度90℃、頻率1Hz之條件使直徑25mm、厚度1mm之前述熱硬化性樹脂膜之試片產生應變,測定前述試片之儲存彈性模數,於將前述試片之應變為1%時的前述試片之儲存彈性模數設為Gc1,將前述試片之應變為300%時的前述試片之儲存彈性模數設為Gc300時,藉由下述式:X=Gc1/Gc300所算出之X值為19以上至未達10000。A laminate comprises: a peeling membrane; a thermosetting resin film disposed on a peeling treatment surface of the peeling membrane; and a back abrasive belt disposed on a side of the thermosetting resin film opposite to the peeling membrane side; wherein the planar shape of the peeling membrane and the planar shape of the thermosetting resin film are both circular; the peeling membrane and the thermosetting resin film are arranged symmetrically at their radially peripheral positions; the back abrasive belt is strip-shaped; and a temperature... A thermosetting resin film specimen with a diameter of 25 mm and a thickness of 1 mm was subjected to strain at 90°C and a frequency of 1 Hz. The storage elastic modulus of the specimen was measured. The storage elastic modulus of the specimen when the strain of the specimen was 1% was set as Gc1, and the storage elastic modulus of the specimen when the strain of the specimen was 300% was set as Gc300. The value of X calculated by the following formula: X=Gc1/Gc300 was 19 or more but less than 10000.
TW110103355A 2020-02-27 2021-01-29 Methods for manufacturing protective film forming wafers, wafers with protective films, and laminates. TWI905141B (en)

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