TWI890765B - Sheet for manufacturing semiconductor device, and method for manufacturing semiconductor chip with film-like adhesive - Google Patents

Abstract

The present invention provides a sheet for manufacturing semiconductor devices, comprising a substrate, an adhesive layer, an intermediate layer, and a film adhesive, wherein the adhesive layer, the intermediate layer, and the film adhesive are sequentially stacked on the substrate, the substrate, the adhesive layer, the intermediate layer, and the film adhesive being arranged in concentric circles, the maximum width of the intermediate layer being smaller than the maximum width of the adhesive layer and the maximum width of the substrate, and the maximum width of the film adhesive being smaller than the maximum width of the adhesive layer. The maximum width of the adhesive layer and the maximum width of the substrate are each greater than or equal to 100,000; the intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component; the total light transmittance of at least one selected from the group consisting of the intermediate layer and the film-like adhesive is less than 60%; and the total light transmittance of at least one selected from the group consisting of the intermediate layer and the film-like adhesive is less than the total light transmittance of the support sheet formed by the substrate and the adhesive layer.

Description

Semiconductor device manufacturing sheet and method for manufacturing semiconductor chip with film adhesive

This invention relates to a sheet for manufacturing semiconductor devices. This application is based upon and claims priority from Japanese Patent Application No. 2020-058734 filed in Japan on March 27, 2020, the contents of which are incorporated herein by reference.

When manufacturing semiconductor devices, a semiconductor chip with a film adhesive is used. The semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive disposed on the inner surface of the semiconductor chip.

As an example of a method for manufacturing a semiconductor chip with a film adhesive, the following method can be cited.

That is, first, a dicing die is attached to the inner surface of the semiconductor wafer.

Examples of dicing wafers include those that include a support sheet and a film-like adhesive applied to one surface of the support sheet. These support sheets can be used as dicing wafers. Support sheets can have various configurations, including those that include a base material and an adhesive layer applied to one surface of the base material, and those consisting solely of a base material. Support sheets with an adhesive layer have the outermost surface of the adhesive layer serving as the surface where the film-like adhesive is applied. The dicing wafer is attached to the inner surface of the semiconductor wafer via the film-like adhesive in the dicing wafer.

Next, the semiconductor wafer and the film adhesive on the support sheet are cut together using a dicing blade. Cutting a semiconductor wafer is also called singulation, and it is used to separate the semiconductor wafer into the target semiconductor chips. The film adhesive is cut along the periphery of the semiconductor chip. In this way, a semiconductor chip with a film adhesive can be obtained, and a group of semiconductor chips with a film adhesive can be obtained. The semiconductor chip with a film adhesive comprises a semiconductor chip and a cut film adhesive disposed on the inner surface of the semiconductor chip. The group of semiconductor chips with a film adhesive is composed of a plurality of semiconductor chips with a film adhesive held in an orderly arrangement on a support sheet.

Next, the semiconductor chip with the film-like adhesive is pulled off the support sheet and picked up. When using a support sheet with a curable adhesive layer, the adhesive layer is cured to reduce the stickiness, making pickup easier.

Through the above operation, a semiconductor chip with a film-like adhesive for manufacturing semiconductor devices is obtained.

As another example of a method for manufacturing a semiconductor chip with a film-type adhesive, the following method can be cited.

That is, first, a back grinding tape (sometimes also called "surface protection tape") is attached to the circuit formation surface of the semiconductor wafer.

Next, a predetermined separation location is set within the semiconductor wafer. Laser light is focused onto the area within this location, forming a modified layer within the semiconductor wafer. The inner surface of the semiconductor wafer is then ground using a grinder to adjust the thickness to the target value. The force applied to the semiconductor wafer during grinding causes the semiconductor wafer to be divided (singulated) at the location where the modified layer was formed, producing multiple semiconductor chips. This method of separating semiconductor wafers with the formation of a modified layer is called stealth dicing (a registered trademark). It is fundamentally different from laser dicing, which involves gradually cutting the semiconductor wafer from the surface while irradiating the semiconductor wafer with laser light to remove the irradiated areas.

Furthermore, a piece of adhesive wafer is attached to the ground inner surface (in other words, the ground surface) of each of these semiconductor wafers fixed on the back grinding tape. The adhesive wafer can be the same as the dicing adhesive wafer described above. The adhesive wafer is not used for dicing the semiconductor wafer as described above and can sometimes be designed to have the same structure as the dicing adhesive wafer. The adhesive wafer is also attached to the inner surface of the semiconductor wafer via a film-like adhesive in the adhesive wafer.

After removing the back grinding tape from the semiconductor chip, the adhesive is cooled while being stretched in a process called cold expansion, parallel to the surface of the adhesive (e.g., the surface where the film adhesive is attached to the semiconductor chip). This process cuts the film adhesive along the periphery of the semiconductor chip.

Through the above operation, a semiconductor chip with a film-like adhesive is obtained. The semiconductor chip with a film-like adhesive comprises a semiconductor chip and a cut film-like adhesive disposed on the inner surface of the semiconductor chip.

Then, similar to the above-mentioned case of dicing with a blade, the semiconductor wafer with the film-like adhesive is pulled off the support sheet and picked up, thereby obtaining a semiconductor wafer with the film-like adhesive for use in manufacturing semiconductor devices.

Both dicing and bonding wafers can be used to manufacture semiconductor wafers with film-type adhesives, ultimately producing target semiconductor devices. In this specification, both dicing and bonding wafers are referred to as "sheets for semiconductor device manufacturing."

As a sheet for manufacturing semiconductor devices having a film-like adhesive that can be cut by expansion, for example, a sheet is disclosed in which a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive are sequentially laminated (see Patent Document 1).

The semiconductor device manufacturing sheet described in Patent Document 1 can be manufactured, for example, by the following steps.

First, a first intermediate laminate comprising a substrate and an adhesive layer, and a second intermediate laminate comprising an intermediate layer and a film-like adhesive layer are prepared in advance.

Next, the adhesive layer in the first interlayer structure is bonded to the interlayer in the second interlayer structure to produce a sheet for manufacturing semiconductor devices.

In the method for manufacturing a semiconductor device manufacturing sheet described in Patent Document 1, it is required to optically identify each layer of the semiconductor device manufacturing sheet using a sensor or the like.

In contrast, Patent Document 2 discloses an adhesive sheet for semiconductor device manufacturing, characterized by containing a pigment that absorbs or reflects light in the wavelength range of 290nm to 450nm.

It is generally believed that the use of this bonding sheet makes it possible to detect the presence of the bonding sheet attached to the semiconductor wafer when the semiconductor wafer is transported between various manufacturing steps in the semiconductor device manufacturing method.

In addition, Patent Document 3 describes a method for manufacturing a sheet for manufacturing a semiconductor device as shown below.

First, a first incision of a predetermined shape (e.g., a circle) is cut into the adhesive layer of an adhesive film composed of a release film and an adhesive layer. The unused adhesive layer portion outside the first incision is peeled off from the release film, resulting in an adhesive film having an adhesive layer of the predetermined shape formed on the release film.

Next, the adhesive film is bonded to an adhesive film composed of an adhesive layer and a base film in such a way that the adhesive layer contacts the adhesive layer.

Next, after identifying and aligning the first cut in the release film formed on the adhesive film, a second cut is made in the adhesive film in a predetermined shape (e.g., a circle) similar to the shape of the adhesive layer. The unused portion of the adhesive film outside the second cut is peeled off from the adhesive film (release film) and rolled up, forming an adhesive film of the predetermined shape on the adhesive film (release film).

In the method for manufacturing a semiconductor device manufacturing sheet described in Patent Document 3, the depth of the first cut formed in the release film of the adhesive film is adjusted.

This allows the sensor to detect the difference between the transmittance at the location with the cutout and the transmittance at the location without the cutout (i.e., the location of the first cutout can be identified).

As a result, it is believed that an adhesive film of a predetermined shape can be formed on an adhesive film (release film).

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] International Publication No. 2020/179897.

[Patent Document 2] Japanese Patent Application Publication No. 2009-059917.

[Patent Document 3] Japanese Patent Application Publication No. 2012-080023.

However, the adhesive sheet described in Patent Document 2 contains pigment, which may reduce the reliability and shear strength of the adhesive sheet.

Furthermore, in the method for manufacturing a semiconductor device manufacturing sheet described in Patent Document 3, it is sometimes impossible to use a sensor to detect the difference in transmittance between locations with cutouts and locations without cutouts.

Therefore, the object of the present invention is to provide a semiconductor device manufacturing sheet that can optically identify an intermediate layer or film adhesive using a sensor.

This invention has the following aspects.

(1) A sheet for manufacturing a semiconductor device, comprising a substrate, an adhesive layer, an intermediate layer, and a film adhesive, wherein the adhesive layer, the intermediate layer, and the film adhesive are sequentially stacked on the substrate, the substrate, the adhesive layer, the intermediate layer, and the film adhesive being arranged in concentric circles, the maximum width of the intermediate layer being smaller than the maximum width of the adhesive layer and the maximum width of the substrate, the maximum width of the film adhesive being smaller than the maximum width of the adhesive layer. The maximum width of the adhesive layer and the maximum width of the substrate are defined. The intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a primary component. The total light transmittance of at least one selected from the group consisting of the intermediate layer and the film-like adhesive is 60% or less. The total light transmittance of at least one selected from the group consisting of the intermediate layer and the film-like adhesive is less than the total light transmittance of the support sheet formed by the substrate and the adhesive layer.

(2) The sheet for manufacturing a semiconductor device as described in (1), wherein the total light transmittance of the supporting sheet is 70% or more.

(3) The semiconductor device manufacturing sheet as described in (1) or (2), wherein the maximum width of the intermediate layer and the maximum width of the film adhesive are 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm.

(4) A method for manufacturing a semiconductor chip with a film adhesive, wherein the semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive disposed on the inner surface of the semiconductor chip; and the method for manufacturing the semiconductor chip with a film adhesive comprises the following steps: irradiating a semiconductor wafer with laser light by focusing it to a focal point disposed inside the semiconductor wafer, thereby forming a modified layer inside the semiconductor wafer; grinding the inner surface of the semiconductor wafer after forming the modified layer, and dividing the semiconductor wafer at the portion where the modified layer is formed by utilizing a force applied to the semiconductor wafer during grinding, thereby obtaining a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; The steps of heating the aforementioned semiconductor device manufacturing sheet as described in any one of items (1) to (3) and attaching the film adhesive in the aforementioned semiconductor device manufacturing sheet to the inner surfaces of all semiconductor chips in the aforementioned semiconductor chip group; cooling the aforementioned semiconductor device manufacturing sheet after being attached to the aforementioned semiconductor chips and stretching it in a direction parallel to the surface of the aforementioned semiconductor device manufacturing sheet to cut the aforementioned film adhesive along the outer periphery of the aforementioned semiconductor chips, thereby obtaining a semiconductor chip group with a film adhesive in which a plurality of semiconductor chips with a film adhesive are neatly arranged on the aforementioned intermediate layer; and, pulling the aforementioned semiconductor chip with a film adhesive off from the aforementioned intermediate layer and picking it up.

1: Support sheet

7: Pull-off mechanism

8: Back grinding tape

9: Semiconductor Chip

9’: Semiconductor wafer

9a: Circuit formation surface of semiconductor chip

9a’: Circuit formation surface of semiconductor wafer

9b: Inner surface of semiconductor chip

9b’: Inner surface of semiconductor wafer

10: Laminated film

11: Base material

11a: One side of the substrate (first side of the substrate)

12: Adhesive layer

12a: The surface of the adhesive layer opposite to the side with the substrate (the first surface of the adhesive layer)

13:Middle layer

13a: The surface of the intermediate layer opposite to the side with the adhesive layer (the first surface of the intermediate layer)

14: Film adhesive

14a: The first side of the film adhesive

15: Peeling membrane

90’: Modified layer

101: Sheet for semiconductor device manufacturing

140: Film adhesive after cutting

901: Semiconductor Chip Group

910: Semiconductor chip group with film adhesive

914: Semiconductor chip with film adhesive

E ₁ : Direction of Expansion

P: Direction of pulling away

W _9' : Width of semiconductor wafer

W ₁₃ : Width of the middle layer

W ₁₄ : Width of film adhesive

[Figure 1] is a schematic cross-sectional view of a semiconductor device manufacturing sheet according to one embodiment of the present invention.

[Figure 2] is a plan view of the semiconductor device manufacturing sheet shown in Figure 1.

[Figure 3A] is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention.

[Figure 3B] is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention.

[Figure 3C] is a cross-sectional view schematically illustrating an example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention.

[Figure 4A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[Figure 4B] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

[Figure 4C] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor chip.

FIG5A is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention.

FIG5B is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention.

FIG5C is a cross-sectional view schematically illustrating another example of a method for using a semiconductor device manufacturing sheet according to an embodiment of the present invention.

◇Sheets for semiconductor device manufacturing

A semiconductor device manufacturing sheet according to one embodiment of the present invention comprises a substrate, an adhesive layer, an intermediate layer, and a film adhesive, wherein the adhesive layer, the intermediate layer, and the film adhesive are sequentially laminated on the substrate. The intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component.

When the semiconductor device manufacturing sheet of this embodiment is used as a dicing wafer for blade dicing, the presence of the intermediate layer makes it easy to prevent the blade from reaching the substrate, thereby suppressing the generation of whisker-like chips (also known as "whiskers"; hereinafter, not limited to those originating from the substrate, and sometimes simply referred to as "chips") from the substrate. Furthermore, by using a non-silicone resin with a weight-average molecular weight of 100,000 or less, particularly a weight-average molecular weight of 100,000 or less, as the main component of the intermediate layer cut by the blade, the generation of chips from the intermediate layer can also be suppressed.

On the other hand, when using the semiconductor device manufacturing sheet of this embodiment as a bonding wafer for dicing (stealth dicing (registered trademark)) accompanied by the formation of a modified layer in a semiconductor wafer, since the semiconductor device manufacturing sheet includes the intermediate layer, the film adhesive can be cut with high precision at the target location by subsequently stretching (so-called expanding) the semiconductor device manufacturing sheet in a direction parallel to the surface of the semiconductor device manufacturing sheet (e.g., the surface where the film adhesive is attached to the semiconductor wafer), thereby suppressing cutting defects.

As such, the semiconductor device manufacturing sheet of this embodiment can suppress the generation of cutting chips from the substrate and interlayer during blade dicing, and can suppress poor cutting of the film adhesive during the aforementioned expansion process. This characteristic also suppresses defects during semiconductor wafer separation, resulting in excellent semiconductor wafer separation suitability.

In this specification, the "weight average molecular weight" refers to the polystyrene-equivalent value measured by gel permeation chromatography (GPC), unless otherwise specified.

The method for using the semiconductor device manufacturing sheet of this embodiment will be described in detail below.

The following describes the semiconductor device manufacturing sheet according to this embodiment in detail with reference to the accompanying drawings. The following illustrations sometimes show enlarged portions of key components for easier understanding of the features of the present invention, and the dimensional ratios of the components may not necessarily correspond to the actual dimensions.

FIG1 is a schematic cross-sectional view of a semiconductor device manufacturing sheet according to one embodiment of the present invention, and FIG2 is a plan view of the semiconductor device manufacturing sheet shown in FIG1.

Furthermore, in the figures following Figure 2, the same components as those shown in the previously described figures are denoted by the same symbols as in the previously described figures, and detailed descriptions are omitted.

The semiconductor device manufacturing sheet 101 shown here comprises a substrate 11 on which an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14 are sequentially laminated. Furthermore, the semiconductor device manufacturing sheet 101 comprises a release film 15 on the surface 14a of the film-like adhesive 14 opposite to the side on which the intermediate layer 13 is provided (hereinafter sometimes referred to as the "first surface") thereof.

In a semiconductor device manufacturing sheet 101, an adhesive layer 12 is provided on one side (sometimes referred to as the "first side" in this specification) 11a of a substrate 11, an intermediate layer 13 is provided on a side (sometimes referred to as the "first side" in this specification) 12a of the adhesive layer 12 opposite to the side on which the substrate 11 is provided, a film-like adhesive 14 is provided on a side (sometimes referred to as the "first side" in this specification) 13a of the intermediate layer 13 opposite to the side on which the adhesive layer 12 is provided, and a release film 15 is provided on the first side 14a of the film-like adhesive 14. In this manner, the semiconductor device manufacturing sheet 101 is constructed by laminating the substrate 11, adhesive layer 12, intermediate layer 13, and film adhesive 14 in this order in the thickness direction of these layers.

The semiconductor device manufacturing sheet 101 is used by attaching the first surface 14a of the film-like adhesive 14 in the semiconductor device manufacturing sheet 101 to the inner surface of a semiconductor wafer, semiconductor chip, or an incompletely divided semiconductor wafer (not shown) with the release film 15 removed.

In this specification, in both semiconductor wafers and semiconductor chips, the side on which circuits are formed is referred to as the "circuit-forming surface," and the surface opposite to the circuit-forming surface is referred to as the "inner surface."

In this specification, a laminate having a substrate and an adhesive layer laminated in the thickness direction without an intermediate layer is sometimes referred to as a "support sheet." In Figure 1, reference numeral 1 indicates a support sheet.

In addition, a laminate having a structure in which a substrate, an adhesive layer, and an intermediate layer are sequentially laminated in the thickness direction is sometimes referred to as a "laminate sheet." In Figure 1 , reference numeral 10 denotes a laminate sheet. The laminate comprising the support sheet and the intermediate layer is included in the laminate sheet.

When viewed from above, the intermediate layer 13 and the film-like adhesive 14 appear circular in plan view. The diameter of the intermediate layer 13 is the same as that of the film-like adhesive 14.

Furthermore, in the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film-like adhesive 14 are arranged so that their centers are aligned. In other words, the positions of the outer peripheries of the intermediate layer 13 and the film-like adhesive 14 are aligned radially.

The areas of first surface 13a of intermediate layer 13 and first surface 14a of adhesive film 14 are both smaller than first surface 12a of adhesive layer 12. Furthermore, the maximum width _W13 (i.e., diameter) of intermediate layer 13 and the maximum width W14 (i.e., diameter) of adhesive film ₁₄ are both smaller than the maximum widths of adhesive layer 12 and substrate 11. Therefore, in semiconductor device manufacturing sheet 101, a portion of first surface 12a of adhesive layer 12 is not covered by intermediate layer 13 and adhesive film 14. The peeling film 15 is directly deposited on the area of the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not deposited. When the peeling film 15 is removed, the area is exposed (hereinafter, in this specification, the area is sometimes referred to as a "non-deposited area").

Furthermore, in the semiconductor device manufacturing sheet 101 having the peeling film 15, the area of the adhesive layer 12 not covered by the intermediate layer 13 and the film adhesive 14 may or may not have an area where the peeling film 15 is not deposited, as shown here.

As described below, a sheet for manufacturing semiconductor devices can be manufactured, for example, as follows. First, an adhesive layer, an intermediate layer, and a film-like adhesive are formed on a release film.

Next, the exposed surface of the adhesive layer opposite to the side with the release film is bonded to one surface of the substrate, thereby producing a first intermediate layer with a release film (in other words, a support sheet with a release film).

Next, the exposed surface of the film-like adhesive opposite to the side with the release film is bonded to the exposed surface of the intermediate layer opposite to the side with the release film, thereby producing a second intermediate laminate with a release film (a laminate of the release film, the intermediate layer, the film-like adhesive, and the release film).

Next, a stamping process is performed.

Specifically, for the second intermediate layer with the release film, a cutting knife is used to perform a punching process from the release film on the intermediate layer side to the film adhesive, removing the useless portion.

In this way, a second intermediate multilayered product with a release film is produced. The second intermediate multilayered product with a release film is constructed by sequentially laminating a film adhesive, an intermediate layer, and a release film on the release film side in the thickness direction, and has a circular planar shape.

Next, the release film is removed from the first intermediate layer body with the release film obtained above, exposing one side of the adhesive layer.

Then, the circular release film is removed from the second intermediate layer product with the release film obtained above, exposing one surface of the intermediate layer.

Next, the newly exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate workpiece to obtain a third intermediate laminate.

Then, the third intermediate layer is subjected to a secondary stamping process.

Specifically, a cutting blade is used to punch the third intermediate layer from the substrate side to remove unnecessary portions.

In this way, a semiconductor device manufacturing sheet can be obtained, wherein the planar shape of the support sheet is circular, and the support sheet, the circular film-shaped adhesive, and the intermediate layer are concentric.

In the aforementioned secondary stamping process, sensors are required to identify the circular adhesive film and intermediate layer, allowing stamping from the substrate side without cutting the adhesive film and intermediate layer.

The total light transmittance of one or more selected from the group consisting of an intermediate layer and a film-like adhesive is 60% or less, preferably 50% or less, more preferably 40% or less, and particularly preferably 30% or less.

This allows the sensor to optically identify the intermediate layer or film adhesive.

The total light transmittance of the middle layer is preferably 60% or less, more preferably 50% or less, more preferably 40% or less, and particularly preferably 30% or less.

This allows for more reliable optical identification of the intermediate layer using sensors.

There is no specific lower limit for the total light transmittance of the middle layer; for example, it can be set at 10%.

The total light transmittance of the film adhesive is preferably 60% or higher, more preferably 70% or higher, and particularly preferably 75% or higher.

When the total light transmittance of the film adhesive is adjusted by including a colorant in the adhesive composition as described below, the reliability of the shear strength between the film adhesive and the semiconductor chip can be improved by ensuring that the total light transmittance of the film adhesive is above the lower limit.

There is no specific upper limit on the total light transmittance of film adhesives; for example, it can be set to 100%.

The total light transmittance of the support sheet composed of the substrate and the adhesive layer is preferably 70% or more, more preferably 75% or more, particularly preferably 80% or more, and even more preferably 85% or more.

This allows sensors to more reliably identify circular film adhesives and intermediate layers during secondary stamping processes.

There is no specific upper limit on the total light transmittance of the support sheet; for example, it can be set to 100%.

The semiconductor device manufacturing sheet 101, which is attached to the semiconductor wafer or semiconductor chip by the film adhesive 14 without cutting the film adhesive 14, can be secured by attaching a portion of the aforementioned non-laminated area of the adhesive layer 12 of the semiconductor device manufacturing sheet 101 to a jig, such as a ring frame, used to secure the semiconductor wafer. Therefore, there is no need to provide a separate jig adhesive layer on the semiconductor device manufacturing sheet 101 to secure the semiconductor device manufacturing sheet 101 to the jig. Furthermore, since no jig adhesive layer is required, the semiconductor device manufacturing sheet 101 can be manufactured efficiently and cost-effectively.

Thus, semiconductor device manufacturing sheet 101 advantageously lacks a jig adhesive layer, but it may also include one. In this case, the jig adhesive layer is provided in an area near the periphery of the surface of any layer constituting semiconductor device manufacturing sheet 101. Examples of such areas include the aforementioned non-laminated area on first surface 12a of adhesive layer 12.

The jig adhesive layer can be a known one, for example, a single-layer structure containing an adhesive component, or a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a sheet serving as a core material.

Furthermore, when the conductive device manufacturing sheet 101 is stretched (so-called expanded) in a direction parallel to the surface of the semiconductor device manufacturing sheet 101 (e.g., the first surface 12a of the adhesive layer 12), as described below, the presence of the non-laminated region on the first surface 12a of the adhesive layer 12 facilitates expansion of the semiconductor device manufacturing sheet 101. Furthermore, not only can the film adhesive 14 be easily cut, but peeling of the intermediate layer 13 and the film adhesive 14 from the adhesive layer 12 can also be suppressed.

In the semiconductor device manufacturing sheet 101, the intermediate layer 13 contains a non-silicone resin having a weight average molecular weight of 100,000 or less as a main component.

The semiconductor device manufacturing sheet of this embodiment is not limited to that shown in Figures 1 and 2. Part of the structure shown in Figures 1 and 2 may be modified, deleted, or added without impairing the effectiveness of the present invention.

For example, the semiconductor device manufacturing sheet of this embodiment may also include other layers that do not correspond to any of the substrate, adhesive layer, intermediate layer, film adhesive, release film, or jig adhesive layer. However, the semiconductor device manufacturing sheet of this embodiment preferably includes the adhesive layer in direct contact with the substrate, the intermediate layer in direct contact with the adhesive layer, and the film adhesive in direct contact with the intermediate layer, as shown in Figure 1.

For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shapes of the intermediate layer and the film-like adhesive may be shapes other than circular, and the planar shapes of the intermediate layer and the film-like adhesive may be the same or different. Furthermore, the areas of the first surface of the intermediate layer and the first surface of the film-like adhesive are preferably both smaller than the areas of the surfaces of layers closer to the substrate (e.g., the first surface of the adhesive layer), and may be the same or different. Furthermore, the outer peripheries of the intermediate layer and the film-like adhesive may or may not be radially aligned.

Next, each layer constituting the semiconductor device manufacturing sheet of this embodiment will be described in detail.

○Base material

The aforementioned substrate is in sheet or film form.

The aforementioned substrate is preferably formed of various resins. Specific examples include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE), etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene butylene-styrene block copolymers, polyvinyl chloride, vinyl chloride copolymers, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate copolymers, ethylene-(meth)acrylic acid copolymers, and ethylene copolymers other than ethylene-(meth)acrylate copolymers, polystyrene, polycarbonate, fluororesins, hydrogenated products, modified products, crosslinked products, or copolymers of any of these resins.

Furthermore, in this specification, the term "(meth)acrylic acid" encompasses both "acrylic acid" and "methacrylic acid." Terms similar to (meth)acrylic acid, such as "(meth)acrylate," encompass both "acrylate" and "methacrylate," and "(meth)acryl" encompasses both "acryl" and "methacryl."

The resin constituting the base material may be a single type or may be two or more types. In the case of two or more types, the combination and ratio of these resins can be arbitrarily selected.

The substrate may consist of a single layer or multiple layers of two or more. In the case of a substrate consisting of multiple layers, these layers may be identical or different, and the combination of these layers is not particularly limited as long as it does not impair the effectiveness of the present invention.

In this specification, the phrase "multiple layers may be the same or different from each other" is not limited to the case of substrates and means "all layers may be the same, all layers may be different, or only some layers may be different." Furthermore, the phrase "multiple layers may be different from each other" means "each layer may differ from each other in at least one of its constituent material and thickness."

The thickness of the substrate can be appropriately selected depending on the intended purpose, preferably ranging from 50 μm to 300 μm, and more preferably from 60 μm to 150 μm. A substrate thickness above the lower limit provides a more stable substrate structure. A substrate thickness below the upper limit facilitates cutting of the film adhesive during blade dicing and during the aforementioned expansion of the semiconductor device manufacturing sheet.

Here, the term "substrate thickness" refers to the thickness of the entire substrate. For example, the term "thickness" of a multi-layer substrate refers to the combined thickness of all layers comprising the substrate.

Unless otherwise specified, "thickness" in this manual refers to the average of thickness measurements taken at five randomly selected locations. This value is obtained using a constant-pressure thickness gauge in accordance with JIS (Japanese Industrial Standards) K7130.

To improve adhesion with other layers such as adhesive layers disposed thereon, the substrate may also be subjected to the following surface treatments: roughening by spraying, solvent treatment, embossing, etc.; and oxidation treatments such as coma discharge treatment, electron beam irradiation, plasma treatment, ozone-UV irradiation, flame treatment, chromic acid treatment, and hot air treatment.

In addition, the surface of the substrate can also be primed.

In addition, the substrate may also have the following layers: an antistatic coating; a layer to prevent the substrate from adhering to other sheets or to the adsorption platform when the adhesive wafers are stacked and stored.

In addition to the aforementioned resin and other main components, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

The optical properties of the substrate are not particularly limited as long as they do not impair the effectiveness of the present invention. For example, the substrate may be capable of transmitting laser light or energy beams.

The substrate can be manufactured using known methods. For example, a substrate containing a resin (using a resin as a constituent material) can be manufactured by molding the aforementioned resin or a resin composition containing the aforementioned resin.

○Adhesive layer

The aforementioned adhesive layer is in sheet or film form and contains an adhesive.

The adhesive layer can be formed using an adhesive composition containing the aforementioned adhesive. For example, the adhesive composition can be applied to the surface where the adhesive layer is to be formed and dried as needed to form the adhesive layer at the target site.

In the adhesive layer, the total content of one or more of the following ingredients in the adhesive layer relative to the total mass of the adhesive layer does not exceed 100% by mass.

Similarly, in the adhesive composition, the total content of one or more of the following components in the adhesive composition relative to the total mass of the adhesive composition does not exceed 100% by mass.

The adhesive composition can be applied using known methods, such as air knife coaters, blade coaters, rod coaters, gravure coaters, roll coaters, knife-roll coaters, curtain coaters, die coaters, doctor blade coaters, screen coaters, Mayer rod coaters, and touch-touch coaters.

The drying conditions for the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, heat drying is preferred. In this case, for example, drying at 70°C to 130°C for 10 seconds to 5 minutes is preferred.

Examples of the adhesive include acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, ester resins, and other adhesive resins, with acrylic resins being preferred.

Furthermore, in this specification, the term "adhesive resin" encompasses both adhesive resins and adhesive resins. For example, the aforementioned adhesive resins include not only resins that possess adhesive properties themselves, but also resins that exhibit adhesive properties through the addition of other ingredients such as additives, or resins that exhibit adhesive properties through the presence of triggering agents such as heat or water.

The adhesive layer can be either hardening or non-hardening. For example, it can be either energy-beam hardening or non-energy-beam hardening. A hardening adhesive layer can easily adjust its physical properties before and after curing.

In this specification, "energy rays" refers to electromagnetic waves or charged particle beams containing energy quanta. Examples of energy rays include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be emitted using, for example, high-pressure mercury lamps, fusion lamps, xenon lamps, black lights, or LED (Light Emitting Diode) lamps as ultraviolet light sources. Electron beams can be emitted using, for example, electron beam accelerators.

In this specification, the term "energy ray-hardenable" refers to the property of being hardened by irradiation with energy rays, and the term "non-energy ray-hardenable" refers to the property of not being hardened even by irradiation with energy rays.

The adhesive layer may consist of a single layer or multiple layers of two or more. In the case of multiple layers, these layers may be the same or different, and the combination of these layers is not particularly limited.

The thickness of the first adhesive layer is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, and even more preferably 1 μm to 30 μm.

Here, the term "adhesive layer thickness" refers to the thickness of the adhesive layer as a whole. For example, the term "adhesive layer thickness" refers to the combined thickness of all layers comprising the adhesive layer.

The optical properties of the adhesive layer are not particularly limited as long as they do not impair the efficacy of the present invention. For example, the adhesive layer may also allow energy rays to penetrate.

Next, the adhesive composition is described.

[Adhesive composition]

When the adhesive layer is energy ray-curable, the adhesive composition containing the energy ray-curable adhesive, that is, the energy ray-curable adhesive composition, can be exemplified by the following adhesive compositions: Adhesive composition (I-1) containing a non-energy ray-curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)") and an energy ray-curable adhesive resin. energy ray-curable compound; an adhesive composition (I-2) comprising an energy ray-curable adhesive resin (I-2a) having an unsaturated group introduced into the side chain of a non-energy ray-curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-2a)"); and an adhesive composition (I-3) comprising the aforementioned adhesive resin (I-2a) and the energy ray-curable compound.

[Adhesive composition (I-1)]

As described above, the adhesive composition (I-1) contains a non-energy ray-curable adhesive resin (I-1a) and an energy ray-curable compound.

[Adhesive resin (I-1a)]

The aforementioned adhesive resin (I-1a) is preferably an acrylic resin.

Examples of the aforementioned acrylic resin include acrylic polymers having at least a constituent unit derived from an alkyl (meth)acrylate.

The aforementioned acrylic resin may contain only one type of constituent unit or two or more types. In the case of two or more types, the combination and ratio of these constituent units can be arbitrarily selected.

The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be a single type or may be two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-1a) may be arbitrarily selected.

In the adhesive composition (I-1), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-1) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 15% by mass to 90% by mass.

[Energy ray curing compound]

Examples of the aforementioned energy ray-curable compound contained in the adhesive composition (I-1) include monomers or oligomers having energy ray-polymerizable unsaturated groups and capable of being cured by irradiation with energy rays.

Examples of monomers in energy ray-curable compounds include: polyvalent (meth)acrylates such as trihydroxymethylpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylates; polyester (meth)acrylates; polyether (meth)acrylates; and epoxy (meth)acrylates.

Among energy ray-curable compounds, oligomers include, for example, oligomers obtained by polymerizing the monomers exemplified above.

Energy-beam-curable compounds are preferably (meth)acrylate urethanes and (meth)acrylate oligomers, as they have relatively large molecular weights and are less likely to reduce the storage elastic modulus of the adhesive layer.

The adhesive composition (I-1) may contain only one or two or more of the aforementioned energy ray-curable compounds. In the case of two or more, the combination and ratio of these energy ray-curable compounds may be arbitrarily selected.

In the adhesive composition (I-1), the content of the energy ray-curable compound relative to the total mass of the adhesive composition (I-1) is preferably 1% by mass to 95% by mass, more preferably 5% by mass to 90% by mass, and even more preferably 10% by mass to 85% by mass.

[Crosslinking agent]

When the aforementioned acrylic polymer having constituent units derived from a functional group-containing monomer in addition to constituent units derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-1) preferably further contains a crosslinking agent.

The crosslinking agent reacts with the functional groups to crosslink the adhesive resins (I-1a).

Examples of crosslinking agents include: isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as toluene diisocyanate, hexamethylene diisocyanate, xylene diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents having an aziridine group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate-based crosslinking agents (crosslinking agents having an isocyanuric acid skeleton).

In terms of increasing the cohesive force of the adhesive and thus the adhesion of the adhesive layer, as well as being easier to obtain, the crosslinking agent is preferably an isocyanate-based crosslinking agent.

The adhesive composition (I-1) may contain only one crosslinking agent or two or more. In the case of two or more crosslinking agents, the combination and ratio of these crosslinking agents can be arbitrarily selected.

When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and even more preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[Photopolymerization initiator]

The adhesive composition (I-1) may further contain a photopolymerization initiator. The adhesive composition (I-1) containing a photopolymerization initiator will fully undergo a curing reaction even when irradiated with relatively low energy such as ultraviolet light.

Examples of the photopolymerization initiator include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, benzoin dimethyl ketal and other benzoin compounds; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one; bis(2,4,6-trimethylbenzyl)phenylphosphine oxide, 2,4,6-trimethylbenzyldiphenylphosphine oxide; Acylphosphine oxide compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as bismuthocene; thiothione compounds such as thiothione; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothione; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc.

In addition, as the aforementioned photopolymerization initiator, for example, quinone compounds such as 1-chloroanthraquinone, and photosensitizers such as amines may also be used.

The adhesive composition (I-1) may contain only one type of photopolymerization initiator or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable compound.

[Other additives]

The adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above-mentioned ingredients, as long as they do not impair the efficacy of the present invention.

Examples of the aforementioned other additives include: antistatic agents, antioxidants, softeners (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, viscosity enhancers, reaction retarders, crosslinking promoters (catalysts), and other well-known additives.

Furthermore, the so-called reaction retarder is, for example, a component used to inhibit unintended cross-linking reactions in the adhesive composition (I-1) during storage due to the action of a catalyst mixed into the adhesive composition (I-1). Examples of reaction retarders include those that form chelate complexes by chelating the catalyst, and more specifically, those having two or more carbonyl groups (-C(=O)-) in one molecule.

The adhesive composition (I-1) may contain only one type of other additives or two or more types. In the case of two or more types, the combination and ratio of these other additives can be arbitrarily selected.

The content of other additives in the adhesive composition (I-1) is not particularly limited and can be appropriately selected according to their type.

[solvent]

The adhesive composition (I-1) may also contain a solvent. By containing a solvent, the adhesive composition (I-1) improves its application suitability to the surface to which it is applied.

The aforementioned solvent is preferably an organic solvent.

[Adhesive composition (I-2)]

As described above, the adhesive composition (I-2) contains an energy-ray-curable adhesive resin (I-2a) having an unsaturated group introduced into the side chain of a non-energy-ray-curable adhesive resin (I-1a).

[Adhesive resin (I-2a)]

The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group with a functional group in the adhesive resin (I-1a).

The aforementioned unsaturated group-containing compound is a compound having, in addition to the aforementioned energy ray-polymerizable unsaturated group, a group capable of bonding to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a).

Examples of the aforementioned energy ray-polymerizable unsaturated group include (meth)acryloyl, ethenyl, and allyl (2-propenyl), with (meth)acryloyl being preferred.

Examples of groups capable of bonding to functional groups in the adhesive resin (I-1a) include isocyanate groups and glycidyl groups capable of bonding to hydroxyl groups or amino groups, and hydroxyl groups and amino groups capable of bonding to carboxyl groups or epoxy groups.

Examples of the aforementioned unsaturated group-containing compounds include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.

The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be a single type or may be two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-2a) may be arbitrarily selected.

In the adhesive composition (I-2), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-2) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 10% by mass to 90% by mass.

[Crosslinking agent]

For example, when the aforementioned acrylic polymer having constituent units derived from functional group-containing monomers, similar to those in the adhesive resin (I-1a), is used as the adhesive resin (I-2a), the adhesive composition (I-2) may further contain a crosslinking agent.

As the aforementioned crosslinking agent in the adhesive composition (I-2), the same crosslinking agents as those in the adhesive composition (I-1) can be cited.

The adhesive composition (I-2) may contain only one crosslinking agent or two or more. In the case of two or more crosslinking agents, the combination and ratio of these crosslinking agents can be arbitrarily selected.

When a crosslinking agent is used, the content of the crosslinking agent in the adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and even more preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Photopolymerization initiator]

The adhesive composition (I-2) may further contain a photopolymerization initiator. The adhesive composition (I-2) containing a photopolymerization initiator will fully undergo a curing reaction even when irradiated with relatively low energy such as ultraviolet light.

As the aforementioned photopolymerization initiator in the adhesive composition (I-2), the same ones as those in the adhesive composition (I-1) can be cited.

The adhesive composition (I-2) may contain only one type of photopolymerization initiator or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Other additives, solvents]

The adhesive composition (I-2) may also contain other additives that are not equivalent to any of the above-mentioned ingredients, as long as they do not impair the efficacy of the present invention.

In addition, the adhesive composition (I-2) may also contain a solvent for the same purpose as the adhesive composition (I-1).

The aforementioned other additives and solvents in adhesive composition (I-2) may be the same as those in adhesive composition (I-1). Adhesive composition (I-2) may contain only one other additive and solvent, or two or more. In the case of two or more other additives and solvents, the combination and ratio of these other additives and solvents may be arbitrarily selected.

The content of other additives and solvents in the adhesive composition (I-2) is not particularly limited and can be appropriately selected according to their type.

[Adhesive composition (I-3)]

As described above, the adhesive composition (I-3) contains the adhesive resin (I-2a) and an energy ray-curable compound.

In the adhesive composition (I-3), the content of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-3) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 15% by mass to 90% by mass.

[Energy ray curing compound]

Examples of the aforementioned energy ray-curable compound contained in the adhesive composition (I-3) include monomers and oligomers having energy ray-polymerizable unsaturated groups and capable of being cured by irradiation with energy rays. Examples include the same energy ray-curable compounds contained in the adhesive composition (I-1).

The adhesive composition (I-3) may contain only one or two or more of the aforementioned energy ray-curable compounds. In the case of two or more, the combination and ratio of these energy ray-curable compounds may be arbitrarily selected.

In the adhesive composition (I-3), the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and even more preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the adhesive resin (I-2a).

[Photopolymerization initiator]

The adhesive composition (I-3) may further contain a photopolymerization initiator. The adhesive composition (I-3) containing a photopolymerization initiator undergoes a sufficient curing reaction even when irradiated with relatively low energy such as ultraviolet light.

As the aforementioned photopolymerization initiator in the adhesive composition (I-3), the same ones as those in the adhesive composition (I-1) can be cited.

The adhesive composition (I-3) may contain only one type of photopolymerization initiator or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy ray-curable compound.

[Other additives, solvents]

The adhesive composition (I-3) may also contain other additives that are not equivalent to any of the above-mentioned ingredients, as long as they do not impair the efficacy of the present invention.

In addition, the adhesive composition (I-3) may also contain a solvent for the same purpose as the adhesive composition (I-1).

The aforementioned other additives and solvents in adhesive composition (I-3) may be the same as those in adhesive composition (I-1). Adhesive composition (I-3) may contain only one other additive and solvent, or two or more. In the case of two or more other additives and solvents, the combination and ratio of these other additives and solvents may be arbitrarily selected.

The content of other additives and solvents in the adhesive composition (I-3) is not particularly limited and can be appropriately selected according to their type.

[Adhesive compositions other than adhesive compositions (I-1) to (I-3)]

So far, the description has focused on adhesive composition (I-1), adhesive composition (I-2), and adhesive composition (I-3). However, the components described herein can also be applied to all adhesive compositions other than these three adhesive compositions (referred to in this manual as "adhesive compositions other than adhesive compositions (I-1) to (I-3)").

As adhesive compositions other than adhesive compositions (I-1) to (I-3), in addition to energy ray-curable adhesive compositions, non-energy ray-curable adhesive compositions can also be cited.

Examples of non-energy ray-curable adhesive compositions include adhesive compositions (I-4) containing non-energy ray-curable adhesive resins (I-1a) such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins. Preferably, the adhesive composition contains an acrylic resin.

Adhesive compositions other than adhesive composition (I-1) to adhesive composition (I-3) preferably contain one or more crosslinking agents, and the content of the crosslinking agent can be the same as that of the above-mentioned adhesive composition (I-1).

[Adhesive composition (I-4)]

Preferred adhesive compositions (I-4) include, for example, those containing the aforementioned adhesive resin (I-1a) and a crosslinking agent.

[Adhesive resin (I-1a)]

As the adhesive resin (I-1a) in the adhesive composition (I-4), the same ones as the adhesive resin (I-1a) in the adhesive composition (I-1) can be cited.

The adhesive resin (I-1a) contained in the adhesive composition (I-4) may be a single type or may be two or more types. In the case of two or more types, the combination and ratio of these adhesive resins (I-1a) may be arbitrarily selected.

In the adhesive composition (I-4), the content of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-4) is preferably 5% by mass to 99% by mass, more preferably 10% by mass to 95% by mass, and even more preferably 15% by mass to 90% by mass.

[Crosslinking agent]

When the aforementioned acrylic polymer having constituent units derived from a functional group-containing monomer in addition to constituent units derived from an alkyl (meth)acrylate is used as the adhesive resin (I-1a), the adhesive composition (I-4) preferably further contains a crosslinking agent.

As the crosslinking agent in the adhesive composition (I-4), the same crosslinking agents as those in the adhesive composition (I-1) can be cited.

The adhesive composition (I-4) may contain only one crosslinking agent or two or more. In the case of two or more crosslinking agents, the combination and ratio of these crosslinking agents can be arbitrarily selected.

In the adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and even more preferably 0.1 to 10 parts by mass, relative to 100 parts by mass of the adhesive resin (I-1a).

[Other additives, solvents]

The adhesive composition (I-4) may also contain other additives that are not equivalent to any of the above-mentioned ingredients, as long as they do not impair the efficacy of the present invention.

In addition, the adhesive composition (I-4) may also contain a solvent for the same purpose as the adhesive composition (I-1).

The aforementioned other additives and solvents in adhesive composition (I-4) may be the same as those in adhesive composition (I-1). Adhesive composition (I-4) may contain only one other additive and solvent, or two or more. In the case of two or more other additives and solvents, the combination and ratio of these other additives and solvents may be arbitrarily selected.

The contents of other additives and solvents in the adhesive composition (I-4) are not particularly limited and can be appropriately selected according to their types.

[Method for producing adhesive composition]

Adhesive compositions other than adhesive compositions (I-1) to (I-3) or adhesive composition (I-4), such as adhesive composition (I-1) to (I-3), are obtained by mixing the aforementioned adhesive and, if necessary, other components other than the aforementioned adhesive, to form the adhesive composition.

There is no specific order for adding the ingredients, and two or more ingredients can be added simultaneously.

When a solvent is used, the solvent may be mixed with any other ingredients to pre-dilute the ingredients before use, or the solvent may be mixed with the ingredients without pre-diluting any other ingredients.

The method for mixing the ingredients during preparation is not particularly limited and can be appropriately selected from known methods such as the following: mixing by rotating a stirrer or agitator, mixing using a mixer, or mixing by applying ultrasonic waves.

The temperature and time for adding and mixing the ingredients are not particularly limited as long as they do not degrade. Adjustments can be made appropriately. The ideal temperature is 15°C to 30°C.

○Intermediate layer, intermediate layer-forming composition

The intermediate layer is in sheet or film form and contains the aforementioned non-silicone resin as a main component.

The middle layer may contain only a non-silicone resin (composed solely of a non-silicone resin), or may contain a non-silicone resin and components other than the non-silicone resin.

The interlayer can be formed, for example, using an interlayer-forming composition containing the aforementioned non-silicone resin. For example, the interlayer can be formed in the target area by applying the interlayer-forming composition to the surface where the interlayer is to be formed and drying it as needed.

In the intermediate layer, the total content of one or more of the following ingredients in the intermediate layer relative to the total mass of the intermediate layer shall not exceed 100% by mass.

Similarly, in the intermediate layer-forming composition, the total content of one or more of the components described below relative to the total mass of the intermediate layer-forming composition does not exceed 100% by mass.

The intermediate layer-forming composition can be applied using the same method as the adhesive composition described above.

The drying conditions for the interlayer-forming composition are not particularly limited. When the interlayer-forming composition contains a solvent described below, heat drying is preferably performed. In this case, drying is preferably performed at 60°C to 130°C for 1 to 6 minutes, for example.

The weight average molecular weight of the aforementioned non-silicone resin is 100,000 or less.

In order to further improve the separation suitability of the semiconductor wafer of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicone resin can be, for example, 80,000 or less, 60,000 or less, or 40,000 or less.

The lower limit of the weight average molecular weight of the aforementioned non-silicone resin is not particularly limited. For example, the aforementioned non-silicone resin having a weight average molecular weight of 5000 or above is more readily available.

The weight-average molecular weight of the non-silicone resin can be appropriately adjusted within a range defined by combining the aforementioned lower limit with any upper limit. For example, in one embodiment, the weight-average molecular weight can be any of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

In this embodiment, the phrase "the interlayer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component" means that "the interlayer contains the non-silicone resin in an amount sufficient to fully demonstrate the effects of containing the non-silicone resin having a weight-average molecular weight of 100,000 or less." From this perspective, the ratio of the non-silicone resin content in the interlayer to the total mass of the interlayer (in other words, the ratio of the non-silicone resin content to the total content of all components other than the solvent in the interlayer-forming composition) is preferably 80% by mass or greater, more preferably 90% by mass or greater, and can be, for example, any of 95% by mass or greater, 97% by mass or greater, and 99% by mass or greater.

On the other hand, the aforementioned ratio is less than 100 mass %.

The aforementioned non-silicone resin has a weight average molecular weight of 100,000 or less. It is not particularly limited as long as it is a resin component having a weight average molecular weight of 100,000 or less and does not contain silicon atoms as constituent atoms.

The non-silicone resin may be, for example, a polar resin having a polar group or a non-polar resin not having a polar group.

For example, the non-silicone resin is preferably a polar resin because it has high solubility in the intermediate layer-forming composition and the intermediate layer-forming composition has higher coating suitability.

In this specification, unless otherwise specified, the term "non-silicone resin" refers to a non-silicone resin having a weight average molecular weight of 100,000 or less.

The non-silicone resin may be, for example, a homopolymer that is a polymer of one monomer (in other words, having only one constituent unit), or a copolymer that is a polymer of two or more monomers (in other words, having two or more constituent units).

Examples of the polar group include carbonyloxy (-C(=O)-O-), oxycarbonyl (-O-C(=O)-), and the like.

The aforementioned polar resin may contain only constituent units having polar groups, or may contain both constituent units having polar groups and constituent units not having polar groups.

Examples of constituent units having the aforementioned polar groups include constituent units derived from vinyl acetate.

Examples of constituent units that do not have the aforementioned polar groups include constituent units derived from ethylene.

The term "derivative" mentioned here refers to the structural changes required for the polymerization of the aforementioned monomers.

In the polar resin, the mass ratio of the constituent units having polar groups relative to the total mass of all constituent units is preferably 5% to 70% by mass, and may be, for example, 7.5% to 55% by mass or 10% to 40% by mass. In other words, the mass ratio of the constituent units not having polar groups relative to the total mass of all constituent units in the polar resin is preferably 30% to 95% by mass, and may be, for example, 45% to 92.5% by mass or 60% to 90% by mass. When the mass ratio of the constituent units having polar groups is above the lower limit, the polar resin exhibits more pronounced properties due to the presence of polar groups. By keeping the mass ratio of the constituent units having polar groups below the aforementioned upper limit, the polar resin can more appropriately possess the characteristics of not containing polar groups.

Examples of the aforementioned polar resins include ethylene-vinyl acetate copolymers.

Preferred polar resins include, for example, ethylene-vinyl acetate copolymers in which the ratio of the mass of the constituent units derived from vinyl acetate relative to the total mass of all constituent units (occasionally referred to as the "content of the constituent units derived from vinyl acetate" in this specification) is 10% to 40% by mass. In other words, preferred polar resins include, for example, ethylene-vinyl acetate copolymers in which the ratio of the mass of the constituent units derived from ethylene relative to the total mass of all constituent units is 60% to 90% by mass.

Examples of the aforementioned non-polar resins include polyethylene (PE) such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE); and polypropylene (PP).

The composition for forming the intermediate layer and the intermediate layer may contain only one non-silicone resin or two or more. In the case of two or more, the combination and ratio of these non-silicone resins can be arbitrarily selected.

For example, the intermediate layer-forming composition and the intermediate layer may contain one or more non-silicone resins as polar resins and no non-silicone resins as non-polar resins; may contain one or more non-silicone resins as non-polar resins and a non-silicone resin as polar resins; or may contain one or more non-silicone resins as polar resins and a non-silicone resin as non-polar resins.

The intermediate layer-forming composition and the intermediate layer preferably contain at least a non-silicone resin as a polar resin.

In the interlayer-forming composition and the interlayer, the content of the aforementioned non-silicone resin as a polar resin relative to the total content of the aforementioned non-silicone resin is preferably 80% by mass or greater, more preferably 90% by mass or greater, and can be, for example, 95% by mass or greater, 97% by mass or greater, or 99% by mass or greater. By ensuring that the aforementioned ratio is above the aforementioned lower limit, the effects of using the aforementioned polar resin can be more significantly achieved.

On the other hand, the aforementioned ratio is less than 100 mass %.

That is, in the interlayer-forming composition and the interlayer, the content of the aforementioned non-silicone resin as a non-polar resin relative to the total content of the aforementioned non-silicone resin is preferably 20% by mass or less, more preferably 10% by mass or less, and can be, for example, 5% by mass or less, 3% by mass or less, or 1% by mass or less.

On the other hand, the aforementioned ratio is 0 mass % or more.

In terms of good workability, the intermediate layer-forming composition preferably contains a solvent in addition to the aforementioned non-silicone resin. It may also contain a component that is neither equivalent to the aforementioned non-silicone resin nor the solvent (sometimes referred to as an "additive" in this specification).

The intermediate layer may contain only the aforementioned non-silicone resin, or it may contain both the aforementioned non-silicone resin and the aforementioned additive.

The aforementioned additives may be either resin components (sometimes referred to as "other resin components" in this specification) or non-resin components.

Examples of the aforementioned other resin components include non-silicone resins with a weight average molecular weight (Mw) exceeding 100,000 and silicone resins.

Non-silicone resins with a weight average molecular weight exceeding 100,000 are not particularly limited as long as they meet these conditions.

As described below, the intermediate layer containing the aforementioned silicone resin facilitates the pickup of semiconductor chips with film-like adhesives.

The aforementioned silicone resin is not particularly limited as long as it is a resin component containing silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicone resin is not particularly limited.

Preferred silicone resins include, for example, resin components that exhibit a demolding effect on adhesive components, and more preferably silicone resins (resin components having a siloxane bond (-Si-O-Si-), also known as silicone compounds).

Examples of the aforementioned silicone resin include polydialkylsiloxanes. The carbon number of the alkyl group in the polydialkylsiloxane is preferably 1 to 20.

Examples of the aforementioned polydialkylsiloxane include polydimethylsiloxane and the like.

In the aforementioned polydialkylsiloxane, the two alkyl groups bonded to a single silicon atom may be the same or different. When the two alkyl groups bonded to a single silicon atom are different, the combination of these two alkyl groups is not particularly limited.

Examples of the aforementioned polydialkylsiloxane include polydimethylsiloxane and the like.

The non-resin component may be, for example, an organic compound or an inorganic compound, and is not particularly limited.

The intermediate layer-forming composition and the intermediate layer may contain only one or more of the aforementioned additives. In the case of two or more, the combination and ratio of these additives can be arbitrarily selected.

For example, the intermediate layer-forming composition and the intermediate layer may contain one or more resin components and no non-resin components as the aforementioned additives, one or more non-resin components and no resin components, or a combination of one or more resin components and non-resin components.

The composition for forming the intermediate layer preferably contains a colorant as an additive.

This allows the total light transmittance of the middle layer to be adjusted to the desired value.

Examples of colorants include well-known inorganic pigments, organic pigments, and organic dyes. Inorganic pigments are preferred as colorants.

Examples of the organic pigments and organic dyes include aluminum pigments, cyanine pigments, merocyanine pigments, crotonium pigments, squalene pigments, azulenium pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalocyanine pigments, naphtholactam pigments, azo pigments, condensed azo pigments, indigo pigments, pyrene pigments, perylene pigments, dioxazines, Pigments include quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex dyes), dithiol metal complex pigments, indolephenol pigments, triallylmethane pigments, anthraquinone pigments, dioxazine pigments, naphthol pigments, azomethine pigments, benzimidazolone pigments, pyranthrone pigments, and threonine pigments.

Examples of the aforementioned inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (Indium Tin Oxide)-based pigments, and ATO (Antimony Tin Oxide)-based pigments. Among these, carbon black is preferred.

The composition for forming the intermediate layer and the colorant that the intermediate layer may contain may be a single type or two or more types. In the case of two or more types, the combination and ratio of these colorants can be arbitrarily selected.

When the interlayer-forming composition and the interlayer contain a colorant, the ratio of the mass of the colorant in the interlayer to 100 mass% of the total mass of the interlayer (in other words, the ratio of the content of the colorant in the interlayer-forming composition to the total content of all components other than the solvent) is preferably 0.2 mass% to 50 mass%, more preferably 0.3 mass% to 20 mass%, and even more preferably 0.5 mass% to 15 mass%.

When the intermediate layer-forming composition and the intermediate layer contain the aforementioned additives, and the aforementioned additives do not contain a colorant, the contents of the components of the intermediate layer-forming composition may be as follows.

In the interlayer, the ratio of the non-silicone resin content to the total mass of the interlayer (in other words, the ratio of the non-silicone resin content to the total mass of all components other than the solvent in the interlayer-forming composition) is preferably 90% by mass to 99.99% by mass. For example, it may be any of 90% by mass to 97.5% by mass, 90% by mass to 95% by mass, and 90% by mass to 92.5% by mass. It may also be any of 92.5% by mass to 99.99% by mass, 95% by mass to 99.99% by mass, and 97.5% by mass to 99.99% by mass. It may also be 92.5% by mass to 97.5% by mass.

In the interlayer, the ratio of the content of the aforementioned additive to the total mass of the interlayer (in other words, the ratio of the content of the aforementioned additive to the total content of all components other than the solvent in the interlayer-forming composition) is preferably 0.01 to 10 mass%. For example, it may be any of 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%. It may also be any of 0.01 to 7.5 mass%, 0.01 to 5 mass%, and 0.01 to 2.5 mass%. It may also be 2.5 to 7.5 mass%.

When the interlayer-forming composition and the interlayer contain the aforementioned other resin components, the ratio of the total content of the aforementioned other resin components to the total content of the aforementioned non-silicone resin in the interlayer (in other words, the ratio of the total content of the aforementioned other resin components to the total content of the aforementioned non-silicone resin in the interlayer-forming composition) is preferably 0% by mass to 10% by mass, more preferably 3% by mass to 10% by mass, and particularly preferably 6% by mass to 10% by mass.

The aforementioned solvent contained in the intermediate layer-forming composition is not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

The intermediate layer-forming composition may contain only one solvent or two or more solvents. In the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily selected.

In order to more uniformly mix the components in the intermediate layer-forming composition, the solvent contained in the intermediate layer-forming composition is preferably tetrahydrofuran or the like.

The content of the solvent in the intermediate layer-forming composition is not particularly limited and can be appropriately selected based on the types of components other than the solvent.

As described below, in order to facilitate pickup of semiconductor chips with film-type adhesives, a preferred intermediate layer includes, for example, one containing an ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, wherein the ratio of the ethylene-vinyl acetate copolymer (the non-silicone resin) content in the intermediate layer to the total mass of the intermediate layer is within any of the numerical ranges described above, and the ratio of the siloxane compound (the additive) content in the intermediate layer to the total mass of the intermediate layer is within any of the numerical ranges described above.

For example, an example of such an intermediate layer includes an ethylene-vinyl acetate copolymer as the non-silicone resin and a silicone compound as the additive, wherein the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the silicone compound in the intermediate layer is 0.01% to 10% by mass relative to the total mass of the intermediate layer. However, this is only one example of a preferred intermediate layer.

An example of a more preferred intermediate layer is one in which the intermediate layer comprises an ethylene-vinyl acetate copolymer as the non-silicone resin and a silicone compound as the additive, wherein the ratio of the mass of the constituent units derived from vinyl acetate in the ethylene-vinyl acetate copolymer to the total mass of all constituent units (in other words, the content of the constituent units derived from vinyl acetate) is 10% to 40% by mass, the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90% to 99.99% by mass, and the content of the silicone compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01% to 10% by mass. However, this is only one example of a more preferred intermediate layer.

In terms of enabling more reliable identification of semiconductor chips with film-type adhesives, a preferred interlayer includes one containing ethylene-vinyl acetate copolymer as the non-silicone resin and a colorant as the additive, with the content of the ethylene-vinyl acetate copolymer in the interlayer being 85% to 99.5% by mass relative to the total mass of the interlayer, and the content of the colorant in the interlayer being 0.5% to 15% by mass relative to the total mass of the interlayer. However, this is only one example of a preferred interlayer.

A more preferred intermediate layer includes, for example, an ethylene-vinyl acetate copolymer as the non-silicone resin and a colorant as the additive, wherein the ratio of the mass of the constituent units derived from vinyl acetate in the ethylene-vinyl acetate copolymer to the total mass of all constituent units (in other words, the content of the constituent units derived from vinyl acetate) is 10% to 40% by mass, the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 85% to 99.5% by mass, and the content of the colorant in the intermediate layer relative to the total mass of the intermediate layer is 0.5% to 15% by mass. However, this is only one example of a preferred intermediate layer.

In a semiconductor device manufacturing wafer, when analyzing the film-type adhesive side of the interlayer (e.g., first surface 13a of interlayer 13 in Figure 1) using X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification), the ratio of the silicon concentration to the combined concentration of carbon, oxygen, nitrogen, and silicon (sometimes referred to as the "silicon concentration ratio" in this specification) is preferably 1% to 20% on a molar basis. Using a semiconductor device manufacturing wafer having such an interlayer makes it easier to pick up semiconductor wafers having a film-type adhesive, as described below.

The aforementioned silicon concentration ratio can be calculated using the following formula.

[Measured value of silicon concentration in XPS analysis (atomic%)] / {[Measured value of carbon concentration in XPS analysis (atomic%)] + [Measured value of oxygen concentration in XPS analysis (atomic%)] + [Measured value of nitrogen concentration in XPS analysis (atomic%)] + [Measured value of silicon concentration in XPS analysis (atomic%)]} × 100.

XPS analysis can be performed on the surface of the intermediate layer on the film adhesive side using an X-ray photoelectron spectrometer (such as the "Quantra SXM" manufactured by Ulvac) at an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W.

In order to achieve a more pronounced effect, the silicon concentration ratio, calculated on a molar basis of the element, may be, for example, 4% to 20%, 8% to 20%, or 12% to 20%, or 1% to 16%, 1% to 12%, or 1% to 8%, or 4% to 16% or 8% to 12%.

When performing XPS analysis as described above, it is possible that other elements other than carbon, oxygen, nitrogen, and silicon may be detected in the aforementioned surface of the intermediate layer (the surface analyzed by XPS). However, even if these other elements are detected, their concentrations are typically very low. Therefore, when calculating the silicon concentration ratio, the measured values of carbon, oxygen, nitrogen, and silicon concentrations can be used to accurately calculate the silicon concentration ratio.

The intermediate layer may be composed of a single layer or multiple layers of two or more. In the case of multiple layers, these layers may be the same or different, and the combination of these layers is not particularly limited.

As described above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate.

The maximum width of the interlayer can be appropriately selected based on the size of the semiconductor wafer. For example, the maximum width of the interlayer can be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width of 150mm, a maximum width of 200mm, or a maximum width of 300mm in a direction parallel to the surface on which the semiconductor device manufacturing sheet is attached. However, as described above, after dicing is performed with the formation of a modified layer in the semiconductor wafer, when the film adhesive is cut by expanding the semiconductor device manufacturing sheet, as described later, the plurality of semiconductor chips (a group of semiconductor chips) after dicing are treated as a whole, and the semiconductor device manufacturing sheet is attached to these semiconductor chips.

In this specification, unless otherwise specified, the term "intermediate layer width" means, for example, "the width of the intermediate layer in a direction parallel to the first surface of the intermediate layer." For example, in the case of a circular intermediate layer, the maximum value of the intermediate layer width is the diameter of the circle representing the planar shape.

The same applies to semiconductor wafers. Specifically, the term "semiconductor wafer width" refers to the width of the semiconductor wafer in a direction parallel to the surface on which the semiconductor device manufacturing sheet is attached. For example, in the case of a circular semiconductor wafer, the maximum width of the semiconductor wafer is the diameter of the circle.

The maximum width of the intermediate layer of 150mm to 160mm means that it is equal to or no more than 10mm larger than the maximum width of a 150mm semiconductor wafer.

Similarly, the maximum width of the intermediate layer of 200mm to 210mm means that it is equal to or no more than 10mm larger than the maximum width of the 200mm semiconductor wafer.

Similarly, the maximum width of the intermediate layer of 300mm to 310mm means that it is equal to or no more than 10mm larger than the maximum width of the 300mm semiconductor wafer.

That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0 mm to 10 mm.

The thickness of the interlayer can be appropriately selected depending on the intended purpose, preferably ranging from 5μm to 150μm, more preferably from 5μm to 120μm. For example, it can be between 10μm and 90μm, between 10μm and 60μm, or between 30μm and 120μm, or between 60μm and 120μm. When the thickness of the interlayer is above the lower limit, the structure of the interlayer becomes more stable. When the thickness of the interlayer is below the upper limit, the film adhesive can be more easily cut during blade dicing and during the aforementioned expansion of the semiconductor device manufacturing sheet.

Here, the term "thickness of the interlayer" refers to the thickness of the interlayer as a whole. For example, the term "thickness of an interlayer composed of multiple layers" refers to the combined thickness of all layers that constitute the interlayer.

When the interlayer contains the aforementioned silicone resin, especially when the silicone resin has low compatibility with the aforementioned non-silicone resin as the main component, the silicone resin in the interlayer tends to concentrate on both surfaces of the interlayer (the first surface and the surface opposite it) and the surrounding areas in the wafer for semiconductor device manufacturing. Furthermore, the stronger this tendency, the easier it is for the film adhesive adjacent to (directly contacting) the interlayer to peel off from the interlayer. This makes it easier to pick up semiconductor chips coated with the film adhesive, as described below.

For example, when comparing interlayers that differ only in thickness but are identical in all other aspects, such as composition and the area of the two surfaces, the ratio (mass %) of the silicone resin content relative to the total mass of the interlayer in these interlayers is the same. However, the silicone resin content (mass %) in the thicker interlayer is higher than that in the thinner interlayer. Therefore, in the case where silicone resin tends to concentrate in the interlayer as described above, the thicker interlayer will have a higher amount of silicone resin concentrated on the two surfaces (the first surface and the surface opposite it) and their surrounding areas than the thinner interlayer. Therefore, even without changing the aforementioned ratio, the pick-up suitability of semiconductor wafers with film-type adhesives can be adjusted by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet, semiconductor wafers with film-type adhesives can be picked up more easily.

The intermediate layer can be formed using an adhesive composition containing the constituent materials of the intermediate layer. For example, the adhesive composition can be applied to the surface where the film-like adhesive is to be formed and dried as needed to form a film-like adhesive on the target area.

The intermediate layer-forming composition can be applied using the same method as the adhesive composition described above.

The drying conditions for the intermediate layer-forming composition are not particularly limited. When the intermediate layer-forming composition contains the aforementioned solvent, it is preferably dried by heat. In this case, it is preferably dried at 60°C to 130°C for 1 to 6 minutes, for example.

○Film adhesive

The aforementioned film adhesive is curable, preferably thermosetting, and even more preferably pressure-sensitive. Film adhesives that exhibit both thermosetting and pressure-sensitive properties can be adhered to various adherends by lightly pressing them in their uncured state. Alternatively, the film adhesive can be softened by heating and subsequently adhered to various adherends. Curing of the film adhesive ultimately results in a highly impact-resistant cured product that maintains sufficient adhesive properties even under severe high-temperature and high-humidity conditions.

When viewing the semiconductor device manufacturing sheet from above, the area of the film adhesive (i.e., the area of the first surface) is preferably smaller than the area of the substrate (i.e., the area of the first surface) and the area of the adhesive layer (i.e., the area of the first surface), so as to approximate the area of the semiconductor wafer before dicing. In this semiconductor device manufacturing sheet, a portion of the first surface of the adhesive layer includes a region (i.e., the aforementioned non-laminated region) that is not in contact with the intermediate layer and the film adhesive. This facilitates expansion of the semiconductor device manufacturing sheet and prevents the force applied to the film adhesive during expansion from being dispersed, making it easier to cut the film adhesive.

Film-like adhesives can be formed using an adhesive composition containing the constituent materials of the film-like adhesive. For example, by applying the adhesive composition to the surface where the film-like adhesive is to be formed and drying it as needed, a film-like adhesive can be formed on the target area.

In film adhesives, the total content of one or more of the following ingredients in the film adhesive shall not exceed 100% by mass relative to the total mass of the film adhesive.

Similarly, in the adhesive composition, the total content of one or more of the following components in the adhesive composition shall not exceed 100% by mass relative to the total mass of the adhesive composition.

The adhesive composition can be applied in the same manner as the adhesive composition described above.

The drying conditions for the adhesive composition are not particularly limited. When the adhesive composition contains a solvent described below, it is preferably dried by heating. In this case, it is preferably dried at 70°C to 130°C for 10 seconds to 5 minutes, for example.

The film adhesive may consist of a single layer or multiple layers of two or more. In the case of multiple layers, these layers may be the same or different, and the combination of these layers is not particularly limited.

As described above, the maximum width of the film adhesive is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate.

The maximum width of the film adhesive can be tailored to the size of the semiconductor wafer, which is the same as the maximum width of the intermediate layer described above.

In other words, the maximum width of the film adhesive can be appropriately selected based on the size of the semiconductor wafer. For example, the maximum width of the film adhesive can be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three numerical ranges correspond to a semiconductor wafer with a maximum width of 150mm, a maximum width of 200mm, or a maximum width of 300mm in a direction parallel to the surface to which the semiconductor device manufacturing sheet is attached.

In this specification, unless otherwise specified, the term "film adhesive width" means, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive with a circular planar shape, the maximum width of the film adhesive is the diameter of the circle representing the planar shape.

In addition, unless otherwise specified, the term "film adhesive width" refers to the "width of the film adhesive before (or before) cutting" during the manufacturing process of semiconductor chips with film adhesives, as described later, and does not refer to the width of the film adhesive after cutting.

The maximum width of a film adhesive of 150mm to 160mm means that it is equal to or no more than 10mm larger than the maximum width of a 150mm semiconductor wafer.

Similarly, the maximum width of a film adhesive of 200mm to 210mm means that it is equal to or no more than 10mm larger than the maximum width of a 200mm semiconductor wafer.

Similarly, the maximum width of a film adhesive of 300mm to 310mm means that it is equal to or no more than 10mm larger than the maximum width of a 300mm semiconductor wafer.

That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer can be, for example, 0 mm to 10 mm.

In this embodiment, the maximum width of the intermediate layer and the maximum width of the film-like adhesive may be within any of the above numerical ranges.

That is, as an example of a semiconductor device manufacturing sheet according to this embodiment, the maximum width of the intermediate layer and the maximum width of the film adhesive are both 150 mm to 160 mm, 200 mm to 210 mm, or 300 mm to 310 mm.

The thickness of the film adhesive is not particularly limited, but is preferably 1 μm to 30 μm, more preferably 2 μm to 20 μm, and even more preferably 3 μm to 10 μm. A film adhesive thickness exceeding the aforementioned lower limit provides a higher bonding strength to the adherend (semiconductor chip). A film adhesive thickness below the aforementioned upper limit facilitates cutting during blade dicing or during the aforementioned expansion of the semiconductor device manufacturing wafer.

Here, the term "thickness of a film adhesive" refers to the thickness of the film adhesive as a whole. For example, the term "thickness of a multi-layer film adhesive" refers to the combined thickness of all layers comprising the film adhesive.

Next, the aforementioned adhesive composition is explained.

The adhesive composition described below may contain one or more of the following components, for example, in such a manner that the total content (mass %) does not exceed 100 mass %.

[Adhesive composition]

Preferred adhesive compositions include, for example, a polymer component (a) and a thermosetting component (b). Each component is described below.

Furthermore, the adhesive composition shown below is a preferred example, and the adhesive composition in this embodiment is not limited to the one shown below.

[Polymer component (a)]

The polymer component (a) is formed by a polymerization reaction of a polymerizable compound and is used to impart film-forming properties and flexibility to the film-forming adhesive, thereby improving its adhesion (in other words, its adhesion) to the target object, such as a semiconductor chip. The polymer component (a) is thermoplastic and not thermosetting. In this specification, the term "polymer compound" also includes products of polycondensation reactions.

The polymer component (a) contained in the adhesive composition and the film-like adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these polymer components (a) may be arbitrarily selected.

Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins.

Among these, the polymer component (a) is preferably an acrylic resin.

In the adhesive composition, the ratio of the polymer component (a) content to the total content of all components other than the solvent (i.e., the ratio of the polymer component (a) content in the film-forming adhesive to the total mass of the film-forming adhesive) is preferably 20% by mass to 75% by mass, more preferably 30% by mass to 65% by mass.

[Thermosetting component (b)]

The thermosetting component (b) is a component that has thermosetting properties and is used to thermally cure the film adhesive.

The adhesive composition and film-like adhesive may contain only one thermosetting component (b) or two or more. In the case of two or more thermosetting components, the combination and ratio of these thermosetting components (b) can be arbitrarily selected.

Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins.

Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

○Epoxy-based thermosetting resin

Epoxy-based thermosetting resins are composed of epoxy resin (b1) and thermosetting agent (b2).

The epoxy-based thermosetting resin contained in the adhesive composition and film adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these epoxy-based thermosetting resins can be arbitrarily selected.

‧Epoxy resin (b1)

Examples of the epoxy resin (b1) include known epoxy resins, such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resin, dicyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, and phenylene skeleton epoxy resin, which are epoxy compounds having two or more functional groups.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. Epoxy resins having unsaturated hydrocarbon groups have a higher compatibility with acrylic resins than epoxy resins without unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using a film adhesive is improved.

The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these epoxy resins (b1) may be arbitrarily selected.

‧Thermosetting agent (b2)

The thermosetting agent (b2) functions as a hardener for the epoxy resin (b1).

Examples of the thermosetting agent (b2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and acid anhydride-converted groups. Phenolic hydroxyl groups, amino groups, or acid anhydride-converted groups are preferred, and phenolic hydroxyl groups or amino groups are more preferred.

Among the heat curing agents (b2), examples of phenolic curing agents having a phenolic hydroxyl group include: polyfunctional phenol resins, biphenol, novolac-type phenol resins, dicyclopentadiene-type phenol resins, aralkyl-type phenol resins, etc.

Among the heat curing agents (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY).

The heat hardener (b2) may also have an unsaturated hydrocarbon group.

The adhesive composition and the film-like adhesive may contain only one type of thermosetting agent (b2) or two or more types. In the case of two or more types, the combination and ratio of these thermosetting agents (b2) can be arbitrarily selected.

In the adhesive composition and film adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, per 100 parts by mass of the epoxy resin (b1). For example, the content can be any of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. When the content of the thermosetting agent (b2) is above the lower limit, curing of the film adhesive is facilitated. When the content of the thermosetting agent (b2) is below the upper limit, the moisture absorption rate of the film adhesive is reduced, further improving the reliability of the package obtained using the film adhesive.

In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (e.g., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) relative to 100 parts by mass of the polymer component (a) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and even more preferably 5 to 50 parts by mass. For example, the content can be any of 5 to 35 parts by mass and 5 to 20 parts by mass. By having the content of the thermosetting component (b) within this range, the peeling force between the intermediate layer and the film-like adhesive is more stable.

In order to improve various physical properties of the film adhesive, the adhesive composition and film adhesive may contain, in addition to the polymer component (a) and the thermosetting component (b), other components other than these components as needed.

Preferred other ingredients in adhesive compositions and film adhesives include, for example: curing accelerators (c), fillers (d), coupling agents (e), crosslinking agents (f), energy ray-curable resins (g), photopolymerization initiators (h), and general additives (i).

[Hardening accelerator (c)]

The hardening accelerator (c) is a component used to adjust the hardening speed of the adhesive composition.

Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylborates such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate.

The adhesive composition and film-like adhesive may contain only one type of hardening accelerator (c) or two or more types. In the case of two or more types, the combination and ratio of these hardening accelerators (c) can be arbitrarily selected.

When a hardening accelerator (c) is used, the content of the hardening accelerator (c) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the thermosetting component (b) in the adhesive composition and the film-like adhesive. By setting the content of the hardening accelerator (c) to be above the lower limit, the effect of using the hardening accelerator (c) can be more significantly achieved. By keeping the content of the curing accelerator (c) below the aforementioned upper limit, the effect of suppressing the highly polar curing accelerator (c) from migrating and segregating toward the interface between the film adhesive and the adherend under high temperature and high humidity conditions is enhanced, further improving the reliability of the package obtained using the film adhesive.

[Filling material (d)]

By including a filler (d), the film adhesive further enhances its expansion cutoff properties. Furthermore, by including a filler (d), the thermal expansion coefficient of the film adhesive is easily adjusted. By optimizing the thermal expansion coefficient for the object to which the film adhesive is attached, the reliability of the package using the film adhesive is further enhanced. Furthermore, by including a filler (d), the moisture absorption rate of the cured film adhesive can be reduced, thereby enhancing heat dissipation.

The filler (d) can be either an organic filler or an inorganic filler, but is preferably an inorganic filler.

Preferred inorganic fillers include, for example, powders of silicon dioxide, aluminum oxide, talc, calcium carbonate, titanium dioxide, red iron, silicon carbide, and boron nitride; beads formed by sphericalizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; and glass fibers.

Among these, the inorganic filler is preferably silicon dioxide or aluminum oxide.

The filler (d) contained in the adhesive composition and the film-like adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these fillers (d) may be arbitrarily selected.

When filler (d) is used, the ratio of the filler (d) content to the total content of all components other than the solvent in the adhesive composition (i.e., the ratio of the filler (d) content in the film-forming adhesive to the total mass of the film-forming adhesive) is preferably 5% to 80% by mass, more preferably 10% to 70% by mass, and even more preferably 20% to 60% by mass. By keeping the ratio within this range, the effects of using filler (d) can be more significantly achieved.

[Coupling agent (e)]

The inclusion of a coupling agent (e) in a film adhesive improves its adhesion and tightness to the adherend. Furthermore, the inclusion of a coupling agent (e) in the film adhesive improves the water resistance of the cured product without compromising heat resistance. The coupling agent (e) has a functional group that reacts with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group that can react with the functional groups of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

The adhesive composition and film-like adhesive may contain only one coupling agent (e) or two or more. In the case of two or more coupling agents, the combination and ratio of these coupling agents (e) can be arbitrarily selected.

When a coupling agent (e) is used, the amount of coupling agent (e) in the adhesive composition and film adhesive is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and even more preferably 0.1 to 5 parts by mass, per 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). By ensuring that the coupling agent (e) content is above the lower limit, the effects of using the coupling agent (e), such as improved dispersibility of the filler (d) in the resin and improved adhesion between the film adhesive and the adherend, can be more significantly achieved. By ensuring that the coupling agent (e) content is below the upper limit, outgassing can be further suppressed.

[Crosslinking agent (f)]

When using the aforementioned acrylic resins, which have functional groups such as vinyl, (meth)acryl, amino, hydroxyl, carboxyl, or isocyanate groups capable of bonding with other compounds, as the polymer component (a), the adhesive composition and film-forming adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is used to crosslink the aforementioned functional groups in the polymer component (a) with other compounds. This crosslinking can adjust the initial adhesion and cohesive strength of the film-forming adhesive.

Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

When an organic polyvalent isocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) contains an isocyanate group and the polymer component (a) contains a hydroxyl group, the reaction between the crosslinking agent (f) and the polymer component (a) allows for the simple introduction of a crosslinked structure into the film-forming adhesive.

The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents (f) may be arbitrarily selected.

When a crosslinking agent (f) is used, the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.3 to 5 parts by mass, per 100 parts by mass of the polymer component (a). By ensuring that the content of the crosslinking agent (f) is above the lower limit, the effects of using the crosslinking agent (f) are more significantly achieved. By ensuring that the content of the crosslinking agent (f) is below the upper limit, excessive use of the crosslinking agent (f) is suppressed.

[Energy ray curing resin (g)]

Since the adhesive composition and the film-like adhesive contain the energy-ray-curable resin (g), the film-like adhesive can change its properties by being irradiated with energy rays.

Energy ray-curing resin (g) is obtained from an energy ray-curing compound.

Examples of the aforementioned energy ray-hardening compound include compounds having at least one polymerizable double bond in the molecule, preferably acrylate compounds having a (meth)acryloyl group.

The adhesive composition may contain only one type of energy-beam-curable resin (g) or two or more types. In the case of two or more types, the combination and ratio of these energy-beam-curable resins (g) can be arbitrarily selected.

When using an energy ray-curable resin (g), the content of the energy ray-curable resin (g) in the adhesive composition relative to the total mass of the adhesive composition is preferably 1 mass % to 95 mass %, more preferably 5 mass % to 90 mass %, and even more preferably 10 mass % to 85 mass %.

[Photopolymerization initiator (h)]

When the adhesive composition and film-like adhesive contain an energy-beam-curable resin (g), a photopolymerization initiator (h) may also be contained in order to efficiently carry out the polymerization reaction of the energy-beam-curable resin (g).

Examples of the photopolymerization initiator (h) in the connecter composition include: benzoin compounds such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acyl compounds such as bis(2,4,6-trimethylbenzyl)phenylphosphine oxide and 2,4,6-trimethylbenzyldiphenylphosphine oxide; phosphine oxide compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thiothione compounds such as thiothionone; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothionone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc.

In addition, as the photopolymerization initiator (h), for example, photosensitizers such as amine can also be used.

The photopolymerization initiator (h) contained in the adhesive composition may be a single type or may be two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators (h) may be arbitrarily selected.

When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 2 to 5 parts by mass, per 100 parts by mass of the energy ray-curable resin (g).

[General additive (i)]

The general additive (i) may be any known additive and may be selected according to the intended purpose without particular limitation. Preferred additives include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and air getters.

The adhesive composition and film-forming adhesive may contain only one general-purpose additive (i) or two or more. In the case of two or more general-purpose additives, the combination and ratio of these general-purpose additives (i) may be arbitrarily selected.

There is no particular limitation on the content of the adhesive composition and film-forming adhesive; they can be appropriately selected according to the intended purpose.

As coloring agents, those exemplified in the composition for forming the intermediate layer can be cited.

The adhesive composition may contain only one colorant or two or more. In the case of two or more colorants, the combination and ratio of these colorants can be arbitrarily selected.

The content of the colorant in the adhesive composition relative to 100% by mass of the total mass of all components other than the solvent (i.e., the ratio of the mass of the colorant in the film-forming adhesive to the total mass of the film-forming adhesive) is preferably 0.2% by mass to 50% by mass, more preferably 0.3% by mass to 20% by mass, and even more preferably 0.5% by mass to 15% by mass.

By ensuring that the colorant content is above the aforementioned lower limit, the film adhesive can be more reliably optically identified using a sensor.

By keeping the colorant content ratio below the aforementioned upper limit, the reliability of the film adhesive and the semiconductor chip, such as the shear strength, can be improved.

[solvent]

The adhesive composition preferably further contains a solvent. Adhesive compositions containing a solvent improve workability.

The aforementioned solvent is not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

The adhesive composition may contain only one solvent or two or more solvents. In the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily selected.

In order to more evenly mix the components in the adhesive composition, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

The solvent content of the adhesive composition is not particularly limited and can be appropriately selected based on the types of components other than the solvent.

[Manufacturing method of adhesive composition]

The adhesive composition is obtained by mixing the various components that constitute the adhesive composition.

The adhesive composition can be manufactured using the same method as the adhesive composition described above, except for the different types of ingredients.

◇Method for manufacturing a sheet for semiconductor device manufacturing

The aforementioned semiconductor device manufacturing sheet can be manufactured by laminating the aforementioned layers in a corresponding positional relationship. The formation methods of each layer are as described above.

For example, the aforementioned semiconductor device manufacturing sheet can be manufactured by separately preparing a base material, an adhesive layer, an intermediate layer, and a film-shaped adhesive, and laminating these in the order of base material, adhesive layer, intermediate layer, and film-shaped adhesive.

However, this method is just one example of a method for manufacturing a sheet for manufacturing semiconductor devices.

The aforementioned semiconductor device manufacturing sheet can also be manufactured, for example, by pre-forming two or more intermediate laminates composed of multiple layers to constitute the semiconductor device manufacturing sheet and then laminating these intermediate laminates together. The structure of the intermediate laminate can be arbitrarily selected as appropriate. For example, a sheet for semiconductor device manufacturing can be produced by prefabricating a first interlayer structure (equivalent to the aforementioned support sheet) comprising a substrate and an adhesive layer, and a second interlayer structure comprising an interlayer and a film-like adhesive layer, and then laminating the adhesive layer in the first interlayer structure to the interlayer in the second interlayer structure.

However, this is just one example of a method for manufacturing a sheet for manufacturing semiconductor devices.

When manufacturing the aforementioned semiconductor device manufacturing sheet, for example, as shown in Figure 1, where the areas of the first surface of the interlayer and the first surface of the film adhesive are both smaller than the areas of the first surface of the adhesive layer and the first surface of the substrate, a step of processing the interlayer and the film adhesive to the target size (this step is sometimes referred to as stamping) may be added at any stage of the aforementioned manufacturing method.

For example, a wafer for semiconductor device manufacturing can be manufactured by additionally processing the interlayer and film adhesive in the second interlayer to a target size in the aforementioned manufacturing method using the second interlayer.

The above-mentioned stamping process may also include, for example, the primary stamping process and the secondary stamping process mentioned below.

During the first punching process, the second intermediate layer with the release film is punched using a cutting knife from the release film on the intermediate layer side to the film adhesive, removing the unnecessary portion.

In this way, a second intermediate multilayered product with a release film is produced. The second intermediate multilayered product with a release film is constructed by sequentially laminating a film adhesive, an intermediate layer, and a release film on the release film side in the thickness direction, and has a circular planar shape.

Next, the release film is removed from the first intermediate layer body with the release film obtained above, exposing the adhesive layer.

Then, the circular release film is removed from the second intermediate layer product with the release film obtained above, exposing one side of the intermediate layer.

Next, the newly exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate workpiece to obtain a third intermediate laminate.

Then, the third intermediate layer is subjected to a secondary stamping process.

Specifically, the third intermediate layer is punched from the substrate side using a cutting blade to remove unnecessary portions.

In this way, a semiconductor device manufacturing sheet can be obtained, wherein the planar shape of the support sheet is circular, and the support sheet, the circular film-shaped adhesive, and the intermediate layer are concentric.

By using the aforementioned stamping process, a sheet for manufacturing semiconductor devices can be produced in which the area of the first surface of the intermediate layer and the area of the first surface of the film adhesive are both smaller than the area of the first surface of the adhesive layer and the first surface of the substrate.

Furthermore, when manufacturing a semiconductor device manufacturing sheet with a release film on a film-like adhesive, for example, the film-like adhesive can be formed on the release film, and the remaining layers can be deposited while maintaining this state to produce the semiconductor device manufacturing sheet. Alternatively, the substrate, adhesive layer, intermediate layer, and film-like adhesive can be deposited, and then the release film can be deposited on the film-like adhesive to produce the semiconductor device manufacturing sheet. The release film can be removed at a necessary stage before using the semiconductor device manufacturing sheet.

A sheet for manufacturing semiconductor devices having layers other than a substrate, adhesive layer, intermediate layer, film adhesive, and release film can be manufactured by adding the steps of forming and laminating the other layers at appropriate times to the above-mentioned manufacturing method.

◇How to use a sheet for semiconductor device manufacturing (Method for manufacturing semiconductor chips with film-type adhesive)

The aforementioned semiconductor device manufacturing sheet can be used in the semiconductor device manufacturing process to manufacture semiconductor chips with film-type adhesives.

The following describes in detail the method for using the aforementioned semiconductor device manufacturing sheet (a method for manufacturing a semiconductor chip with a film-like adhesive) with reference to the drawings.

Figures 3A, 3B, and 3C are cross-sectional views schematically illustrating an example of a method for using a semiconductor device manufacturing sheet. They show the semiconductor device manufacturing sheet being attached to a semiconductor wafer before use. In this method, the semiconductor device manufacturing sheet is used as a dicing wafer. Here, the method of use is explained using the semiconductor device manufacturing sheet 101 shown in Figure 1 as an example.

First, as shown in Figure 3A, while heating the semiconductor device manufacturing sheet 101 with the release film 15 removed, the film-like adhesive 14 in the semiconductor device manufacturing sheet 101 is attached to the inner surface 9b' of the semiconductor wafer 9'.

Symbol 9a' represents the circuit formation surface of the semiconductor wafer 9'.

The heating temperature during the attachment of the semiconductor device manufacturing sheet 101 is not particularly limited. However, in order to further improve the thermal attachment stability of the semiconductor device manufacturing sheet 101, a temperature of 40°C to 70°C is preferred.

The maximum width _W13 of the intermediate layer 13 and the maximum width _W14 of the film adhesive 14 in the semiconductor device manufacturing sheet 101 are completely identical to the maximum width W9 _' of the semiconductor wafer 9', or are substantially identical with slight differences.

Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above is cut with a blade from the circuit formation surface 9a' side of the semiconductor wafer 9' (blade dicing), thereby dividing the semiconductor wafer 9' and cutting the film adhesive 14.

Blade dicing can be performed using known methods. For example, the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film adhesive 14 are not deposited (the aforementioned non-deposited area) can be fixed to a jig such as a ring frame (not shown). A blade can then be used to separate the semiconductor wafers 9' and cut the film adhesive 14.

This step yields multiple semiconductor chips 914 with film adhesive, as shown in Figure 3B. Each semiconductor chip 914 includes a semiconductor chip 9 and a cut film adhesive 140 formed on the inner surface 9b of the semiconductor chip 9. These semiconductor chips 914 are neatly aligned and fixed on the intermediate layer 13 of the laminate 10, forming a semiconductor chip group 910 with film adhesive.

The inner surface 9b of the semiconductor chip 9 corresponds to the inner surface 9b' of the semiconductor wafer 9'. In Figure 3, the symbol 9a represents the circuit formation surface of the semiconductor chip 9, which corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'.

During blade dicing, it is preferred to use the blade to separate the semiconductor wafer 9' by cutting into the entire thickness direction. Furthermore, for the semiconductor device manufacturing sheet 101, the blade is cut from the first surface 14a of the film adhesive 14 to a region midway through the intermediate layer 13. This allows the film adhesive 14 to be severed throughout its entire thickness direction without cutting into the adhesive layer 12.

That is, during dicing, it is preferred that the blade be used to cut through the stack of semiconductor device manufacturing sheet 101 and semiconductor wafer 9' from circuit-forming surface 9a' of semiconductor wafer 9' to at least first surface 13a of intermediate layer 13 in the stacking direction, without cutting into the surface of intermediate layer 13 opposite first surface 13a (i.e., the surface in contact with adhesive layer 12).

During this step, the blade can be easily prevented from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. Furthermore, the main component of the intermediate layer 13 cut by the blade is a non-silicone resin with a weight-average molecular weight of 100,000 or less, particularly a weight-average molecular weight of 100,000 or less, thereby also suppressing the generation of cutting chips from the intermediate layer 13.

The conditions for blade cutting can be adjusted appropriately according to the purpose and are not particularly limited.

Generally, the blade rotation speed is preferably between 15,000 rpm and 50,000 rpm, and the blade movement speed is preferably between 5 mm/sec and 75 mm/sec.

After dicing, as shown in Figure 3C , the semiconductor wafer 914 with the film-like adhesive is pulled from the intermediate layer 13 of the laminate 10 and picked up. Here, a pulling mechanism 7, such as a vacuum chuck, is shown pulling the semiconductor wafer 914 with the film-like adhesive in the direction of arrow P. Furthermore, a cross-section of the pulling mechanism 7 is shown.

The semiconductor chip 914 with the film adhesive can be picked up using a known method.

When the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is between 1% and 20%, it is easier to pick up the semiconductor chip 914 with the film adhesive.

When the intermediate layer 13 contains, for example, ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the ratio of the ethylene-vinyl acetate copolymer content in the intermediate layer relative to the total mass of the intermediate layer is 90% to 99.99% by mass, and the ratio of the siloxane compound content in the intermediate layer relative to the total mass of the intermediate layer is 0.01% to 10% by mass, semiconductor chips 914 with film adhesive can be more easily picked up.

In the above-mentioned method for manufacturing a semiconductor chip with a film adhesive, as a preferred embodiment, the following method for manufacturing a semiconductor chip with a film adhesive can be cited as an example, wherein the semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive disposed on the inner surface of the aforementioned semiconductor chip, and the aforementioned semiconductor device manufacturing sheet comprises the aforementioned substrate, adhesive layer, intermediate layer and film adhesive; the aforementioned manufacturing method comprises the following steps: while heating the aforementioned semiconductor device manufacturing sheet, the film adhesive in the semiconductor device manufacturing sheet is adhered to the inner surface of the aforementioned semiconductor wafer; The semiconductor wafer having the film adhesive is cut into the entire thickness direction from the circuit-forming surface side to separate the semiconductor wafer, thereby producing semiconductor chips. The semiconductor device manufacturing sheet is cut into the film adhesive from the film adhesive side to a region midway along the intermediate layer in the thickness direction, without cutting into the adhesive layer, thereby severing the film adhesive, thereby obtaining a group of semiconductor chips having the film adhesive in which a plurality of semiconductor chips having the film adhesive are neatly arranged on the intermediate layer. The semiconductor chips having the film adhesive are then separated from the intermediate layer and picked up (sometimes referred to as "manufacturing method 1" in this specification).

Figures 4A, 4B, and 4C are cross-sectional views schematically illustrating an example of a method for manufacturing a semiconductor wafer used as a sheet for semiconductor device manufacturing. They show how the semiconductor wafer is manufactured by dicing accompanied by the formation of a modified layer in the semiconductor wafer.

Figures 5A, 5B, and 5C are cross-sectional views schematically illustrating another example of a method for using a semiconductor device manufacturing sheet. They show how the semiconductor device manufacturing sheet is attached to a semiconductor chip. In this method, the semiconductor device manufacturing sheet is used as a chip adhesive. Here, the method for using semiconductor device manufacturing sheet 101 shown in Figure 1 is used as an example.

First, before using the semiconductor device manufacturing sheet 101, as shown in Figure 4A, a semiconductor wafer 9' is prepared, and a back grinding tape (sometimes also called a "surface protection tape") 8 is attached to the circuit formation surface 9a' of the semiconductor wafer 9'.

In FIG4A , symbol W _{9 ′} represents the width of semiconductor wafer 9 ′.

Next, laser light (not shown) is irradiated to a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in Figure 4B.

The aforementioned laser light is preferably irradiated onto the semiconductor wafer 9' from the inner surface 9b' of the semiconductor wafer 9'.

The focal point at this time is the predetermined position for dividing (dicing) the semiconductor wafer 9' and is set so that semiconductor chips of the target size, shape, and number are obtained from the semiconductor wafer 9'.

Next, a grinder (not shown) is used to grind the inner surface 9b' of the semiconductor wafer 9'. This adjusts the thickness of the semiconductor wafer 9' to the target value. The grinding force applied to the semiconductor wafer 9' is then utilized to separate the semiconductor wafer 9' at the location where the modified layer 90' is to be formed, thereby producing a plurality of semiconductor chips 9 as shown in FIG4C .

Unlike other areas of the semiconductor wafer 9', the modified layer 90' of the semiconductor wafer 9' is altered and weakened by laser light irradiation. Therefore, by applying force to the semiconductor wafer 9' with the modified layer 90' formed thereon, the semiconductor wafer 9' is fractured at the location of the modified layer 90', resulting in multiple semiconductor chips 9.

Through the above operation, semiconductor wafers 9 are obtained, which are used as semiconductor device manufacturing sheets 101. More specifically, through this step, a semiconductor wafer group 901 is obtained, in which a plurality of semiconductor wafers 9 are fixed in an orderly manner on the back grinding tape 8.

When the semiconductor chip group 901 is viewed from above, the planar shape formed by connecting the outermost portions of the semiconductor chip group 901 (in this specification, this planar shape is sometimes referred to as the "planar shape of the semiconductor chip group") is identical to the planar shape of the semiconductor wafer 9' when viewed from above in the same manner, or the difference between these planar shapes is so slight as to be negligible. It can be said that the planar shape of the semiconductor chip group 901 and the planar shape of the semiconductor wafer 9' are substantially identical.

Therefore, as shown in FIG4C , the width of the planar shape of semiconductor chip group 901 is considered to be the same as the width W _{9 ′} of semiconductor wafer 9 ′. Furthermore, the maximum value of the width of the planar shape of semiconductor chip group 901 is considered to be the same as the maximum value of the width W _{9 ′} of semiconductor wafer 9 ′.

Furthermore, this diagram shows the process of producing semiconductor chips 9 from semiconductor wafer 9' according to the intended purpose. However, depending on the grinding conditions of the inner surface 9b' of semiconductor wafer 9', some areas of semiconductor wafer 9' may not be divided into semiconductor chips 9.

Next, the semiconductor chip 9 (semiconductor chip group 901) obtained above is used to manufacture a semiconductor chip with a film-like adhesive.

First, as shown in Figure 5A, a semiconductor device manufacturing sheet 101 with the release film 15 removed is heated while the film adhesive 14 in the semiconductor device manufacturing sheet 101 is applied to the inner surfaces 9b of all semiconductor chips 9 in the semiconductor chip group 901. The film adhesive 14 can also be applied to semiconductor wafers that have not been completely separated.

The maximum width _W13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum width _W14 of the film adhesive 14 are exactly the same as the maximum width W9' of the semiconductor wafer 9 _' (in other words, the width of the semiconductor chip group 901), or are different but with slight errors and are basically the same.

At this time, the film adhesive 14 (semiconductor device manufacturing sheet 101) is attached to the semiconductor chip group 901 using the same method as the method for attaching the film adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the aforementioned manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

Next, the back grinding tape 8 is removed from the fixed semiconductor wafer group 901. Then, as shown in FIG5B , the semiconductor device manufacturing sheet 101 is stretched parallel to its surface (e.g., the first surface 12a of the adhesive layer 12) while cooling. The direction of expansion of the semiconductor device manufacturing sheet 101 is indicated by arrow _E1 . This expansion cuts the film adhesive 14 along the periphery of the semiconductor wafer 9.

This step yields multiple semiconductor chips 914 with film adhesive. Each of these semiconductor chips 914 includes a semiconductor chip 9 and a cut film adhesive 140 disposed on the inner surface 9b of the semiconductor chip 9. These semiconductor chips 914 are neatly aligned and fixed on the intermediate layer 13 of the laminate 10, forming a semiconductor chip group 910 with film adhesive.

The semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained here are substantially the same as the semiconductor chip 914 with a film-like adhesive and the semiconductor chip group 910 with a film-like adhesive obtained by the manufacturing method 1 described above.

As described above, when the semiconductor wafer 9' is being divided, if a portion of the semiconductor wafer 9' has not been divided into semiconductor chips 9, this step is performed to separate the portion into semiconductor chips.

The semiconductor device manufacturing sheet 101 is preferably expanded at a temperature of -5°C to 5°C. By cooling and expanding the semiconductor device manufacturing sheet 101 in this manner (cold expansion), the film adhesive 14 can be cut more easily and with high precision.

The semiconductor device manufacturing sheet 101 can be expanded using known methods. For example, the area near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not deposited (the aforementioned non-deposited area) is secured to a jig such as a ring frame (not shown). The entire area of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are deposited is then raised from the side of the substrate 11 in a direction from the substrate 11 toward the adhesive layer 12, thereby expanding the semiconductor device manufacturing sheet 101.

In Figure 5(b), the non-laminated region on the first surface 12a of the adhesive layer 12, where the intermediate layer 13 and the film-like adhesive 14 are not laminated, is generally parallel to the first surface 13a of the intermediate layer 13. However, as described above, when expanded by the lifting of the semiconductor device manufacturing sheet 101, the non-laminated region includes an inclined surface, the height of which decreases in a direction opposite to the lifting direction as it approaches the periphery of the adhesive layer 12.

In this step, because the semiconductor device manufacturing sheet 101 includes the intermediate layer 13 (in other words, the film adhesive 14 before cutting is provided on the intermediate layer 13), the film adhesive 14 can be cut with high precision at the target location (in other words, along the periphery of the semiconductor wafer 9), thereby suppressing cutting defects.

After expansion, as shown in FIG5C , the semiconductor chip 914 with the film adhesive is pulled off the middle layer 13 in the laminate 10 and picked up.

The picking process at this point can be performed using the same method as described above in Manufacturing Method 1, and the picking suitability is also the same as that in Manufacturing Method 1.

For example, in this step, when the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1% to 20%, it is easier to pick up the semiconductor chip 914 with the film adhesive.

Furthermore, when the intermediate layer 13 contains, for example, ethylene-vinyl acetate copolymer as the non-silicone resin and a siloxane compound as the additive, and the ratio of the ethylene-vinyl acetate copolymer content in the intermediate layer relative to the total mass of the intermediate layer is 90% to 99.99% by mass, and the ratio of the siloxane compound content in the intermediate layer relative to the total mass of the intermediate layer is 0.01% to 10% by mass, semiconductor chips 914 with film adhesive can be more easily picked up.

In the above-mentioned method for manufacturing a semiconductor chip with a film adhesive described above, as a preferred embodiment, the following method for manufacturing a semiconductor chip with a film adhesive can be cited, wherein the semiconductor chip with a film adhesive comprises a semiconductor chip and a film adhesive disposed on the inner surface of the semiconductor chip, and the sheet for manufacturing a semiconductor device comprises the substrate, the adhesive layer, the intermediate layer and the film adhesive. The manufacturing method comprises the following steps: forming a modified layer inside the semiconductor wafer by irradiating the semiconductor wafer with laser light in a manner focused on a focal point set inside the semiconductor wafer; grinding the inner surface of the semiconductor wafer after forming the modified layer, and dividing the semiconductor wafer at the portion where the modified layer is formed by utilizing a force applied to the semiconductor wafer during grinding to obtain a semiconductor wafer. The method comprises the steps of heating the semiconductor device manufacturing sheet and attaching the film adhesive in the semiconductor device manufacturing sheet to the inner surfaces of all the semiconductor chips in the semiconductor chip group; cooling the semiconductor device manufacturing sheet after being attached to the semiconductor chip, and applying a film adhesive to the inner surfaces of all the semiconductor chips in the semiconductor chip group; The method further comprises stretching the film adhesive in a direction parallel to the substrate to cut the film adhesive along the periphery of the semiconductor chip, thereby obtaining a group of semiconductor chips with film adhesive in which a plurality of semiconductor chips with film adhesive are neatly arranged on the intermediate layer; and pulling the semiconductor chips with film adhesive off the intermediate layer and picking them up (sometimes referred to as "manufacturing method 2" in this specification).

Thus far, both Manufacturing Method 1 and Manufacturing Method 2 have been described using the semiconductor device manufacturing sheet 101 shown in FIG. 1 as an example. However, other semiconductor device manufacturing sheets according to this embodiment can also be used in the same manner. In such cases, additional steps may be added as needed based on the differences in the structure of the semiconductor device manufacturing sheet and the semiconductor device manufacturing sheet 101, and the semiconductor device manufacturing sheet may be used.

Not limited to the cases of manufacturing methods 1 and 2, after obtaining the group of semiconductor chips with film adhesive, and before picking up the semiconductor chips with film adhesive, the laminate sheet may be expanded in a direction parallel to the surface (first surface) of the intermediate layer side opposite the adhesive layer. This state is then maintained while heating the peripheral portion of the laminate sheet where the semiconductor chips with film adhesive (group of semiconductor chips with film adhesive) are not placed.

This configuration shrinks the peripheral edge and maintains a sufficiently wide and uniform kerf width between adjacent semiconductor chips on the laminate. Furthermore, it makes it easier to pick up semiconductor chips with film adhesive.

In the above-mentioned manufacturing method 2, the maximum width of the film adhesive is preferably 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm.

These three numerical ranges correspond to a semiconductor wafer with a maximum width of 150 mm, a maximum width of 200 mm, or a maximum width of 300 mm relative to the surface on which the semiconductor device manufacturing sheet is attached.

As will be described later in the embodiments, by keeping the maximum width of the film adhesive within the above range, it is possible to suppress scattering of the film adhesive during expansion of the semiconductor device manufacturing sheet.

[Example]

The present invention is described in more detail below using specific embodiments. However, the present invention is not limited to the embodiments shown below.

[Raw materials for adhesive components]

The raw materials used to make the adhesive composition are shown below.

[Polymer component (a)]

(a)-1: Acrylic resin (weight average molecular weight 800,000, glass transition temperature 9°C) prepared by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).

[Epoxy resin (b1)]

(b1)-1: Cresol novolac-type epoxy resin with an acryl group added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent weight 518 g/eq, number average molecular weight 2100, unsaturated group content is equal to the epoxy group content).

[Thermosetting agent (b2)]

(b2)-1: Aralkyl phenol resin ("Milex XLC-4L" manufactured by Mitsui Chemicals, number average molecular weight 1100, softening point 63°C)

[Filling material (d)]

(d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatechs, average particle size 50nm, methacrylate-treated)

[Coupling agent (e)]

(e)-1: Silane coupling agent, 3-glycidyloxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Polysilicone Co., Ltd.)

[Crosslinking agent (f)]

(f)-1: Toluene diisocyanate crosslinking agent ("Coronate L" manufactured by Tosoh Corporation)

[Reference Example 1]

[Manufacturing and evaluation of semiconductor device manufacturing sheets (1)]

[Manufacturing of base materials]

Low-density polyethylene (LDPE, Sumitomo Chemical Co., Ltd., "Sumikasen L705") was melted using an extruder and extruded using a T-die method. The extrudate was then stretched biaxially using cooling rolls to produce an LDPE substrate (110 μm thick).

[Preparation of adhesive layer]

A non-energy ray-curable adhesive composition was prepared, comprising an acrylic resin ("Oribain BPS 6367X" manufactured by Toyo-Chem) (100 parts by mass) as an adhesive resin (I-1a) and a crosslinking agent ("BXX 5640" manufactured by Toyo-Chem) (1 part by mass).

Next, a release film of polyethylene terephthalate film with a silicone-treated release layer on one side was used. The adhesive composition obtained above was applied to the release-treated surface and dried at 100°C for 2 minutes to produce a non-energy ray-curable adhesive layer (10 μm thick).

[Production of the middle layer]

At room temperature, 15 g of ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of vinyl acetate-derived units 25% by mass) was dissolved in 85 g of tetrahydrofuran. To the resulting solution was added 1.5 g of a siloxane compound (polydimethylsiloxane, BYK-333 manufactured by BYK Chemie Japan, containing 45 to 230 units represented by the formula "-Si(-CH ₃ ) ₂ -O-" per molecule) and stirred to prepare a composition for forming an intermediate layer.

A release film of polyethylene terephthalate film with a silicone treatment on one side was used. The intermediate layer-forming composition obtained above was applied to the release-treated surface and then dried at 70°C for 5 minutes to produce an intermediate layer (20 μm thick).

[Preparation of film adhesive]

A thermosetting adhesive composition is prepared, wherein the thermosetting adhesive composition comprises a polymer component (a)-1 (100 parts by mass), an epoxy resin (b1)-1 (10 parts by mass), a thermosetting agent (b2)-1 (1.5 parts by mass), a filler (d)-1 (75 parts by mass), a coupling agent (e)-1 (0.5 parts by mass), and a crosslinking agent (f)-1 (0.5 parts by mass).

Next, a release film of polyethylene terephthalate film with one side treated with silicone for release was used. The adhesive composition obtained above was applied to the release-treated surface and dried at 80°C for 2 minutes to produce a thermosetting film-like adhesive (7 μm thick).

[Manufacturing of sheets for semiconductor device manufacturing]

The exposed surface of the adhesive layer obtained above, which is opposite to the side with the release film, is bonded to one surface of the substrate obtained above, thereby producing a first intermediate layer with a release film (in other words, a support sheet with a release film).

The exposed surface of the film-like adhesive obtained above, which is opposite to the side with the release film, is laminated to the exposed surface of the intermediate layer obtained above, which is opposite to the side with the release film, to produce a second intermediate laminate with a release film (a laminate of the release film, the intermediate layer, the film-like adhesive, and the release film).

Next, a stamping process is performed.

Specifically, for the second intermediate layer with the release film, a cutting knife is used to perform a punching process from the release film on the intermediate layer side to the film adhesive, removing the useless portion.

In this way, a second intermediate multilayered product with a release film was produced. The second intermediate multilayered product with a release film was constructed by laminating a film adhesive (7 μm thick), an intermediate layer (20 μm thick), and a release film in this order in the thickness direction on the release film on the film adhesive side. The planar shape of the product was circular (305 mm in diameter).

Next, the release film is removed from the first intermediate layer body with the release film obtained above, exposing one side of the adhesive layer.

Then, the circular release film is removed from the second intermediate layer product with the release film obtained above, exposing one side of the intermediate layer.

Next, the newly exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly exposed surface of the intermediate layer in the second intermediate laminate workpiece to obtain a third intermediate laminate.

Then, the third intermediate layer is subjected to a secondary stamping process.

Specifically, the third intermediate layer was punched from the substrate side using a cutting blade (370mm) to remove unnecessary portions.

This yielded a semiconductor device manufacturing sheet in which the support sheet had a circular planar shape (370 mm in diameter) and was concentric with the circular film adhesive and intermediate layer (305 mm in diameter).

Through the above operation, a semiconductor device manufacturing sheet with a release film was obtained. The semiconductor device manufacturing sheet with a release film was composed of a substrate (thickness 110μm), an adhesive layer (thickness 10μm), an intermediate layer (thickness 20μm), a film-like adhesive (thickness 7μm), and a release film layered sequentially in the thickness direction.

[Calculation of the ratio of silicon concentration on the film adhesive side of the intermediate layer]

During the manufacturing process of the aforementioned semiconductor device manufacturing sheet, the exposed surface of the interlayer, prior to lamination with the adhesive layer, was analyzed using XPS to measure the atomic % concentrations of carbon (C), oxygen (O), nitrogen (N), and silicon (Si). The ratio (%) of the silicon concentration to the combined concentrations of carbon, oxygen, nitrogen, and silicon was calculated from these measured values.

XPS analysis was performed using an X-ray photoelectron spectrometer (Quantra SXM, manufactured by Ulvac) at an irradiation angle of 45°, an X-ray beam diameter of 20 μm, and an output of 4.5 W. The results, along with the concentration ratios (%) of other elements, are shown in the "Element Concentration Ratio (%) in the Intermediate Layer" column in Table 1.

[Evaluation of the effect of suppressing chip generation during blade cutting]

[Manufacturing of silicon wafers with film adhesives]

The release film is removed from the semiconductor device manufacturing sheet obtained above.

A silicon wafer (300 mm in diameter, 75 μm thick) whose inner surface had been dry-polished was used. A laminating machine (Adwill RAD2500, manufactured by Lintec) was used to heat the semiconductor device manufacturing sheet to 60°C while laminating it via the film adhesive of the semiconductor device manufacturing sheet. This resulted in a laminated product consisting of a substrate, adhesive layer, intermediate layer, film adhesive, and silicon wafer laminated in this order along the thickness direction.

Next, the area near the periphery of the first surface of the adhesive layer in the laminate where no intermediate layer is provided (the aforementioned non-laminated area) is fixed to a wafer dicing ring frame.

Next, a dicing machine (Disco's "DFD6361") was used to separate the silicon wafer and cut the film adhesive, yielding 8mm x 8mm silicon chips. The dicing was performed at a blade rotation speed of 30,000 rpm and a blade travel speed of 30 mm/sec. The blade cut into the semiconductor device manufacturing wafer from the film adhesive surface of the wafer where the silicon wafer was attached to the wafer to a region midway along the intermediate layer (i.e., the entire thickness of the film adhesive and the region midway along the intermediate layer from the film adhesive side). The blade used was the "Z05-SD2000-D1-90 CC" manufactured by Disco.

Through the above operation, a group of silicon wafers with film adhesive is obtained in the following state: a plurality of silicon wafers with film adhesive, each comprising a silicon wafer and a film adhesive disposed on the inner surface of the silicon wafer after cutting, are neatly arranged and fixed on the intermediate layer of the stacked wafer via the film adhesive.

[Evaluation of the Chip Generation Suppression Effect]

The silicon wafers with film-like adhesive obtained above were observed from above using a digital microscope (Keyence VH-Z100) to check for the presence of shavings. A score of "A" indicated no shavings at all, while a score of "B" indicated slight shavings. The results are shown in Table 1.

[Evaluation of the cut-off properties of film adhesives during expansion]

[Manufacturing of silicon wafers with film adhesives]

A circular silicon wafer with a diameter of 300 mm and a thickness of 775 μm was used. Back grinding tape (Adwill E-3100TN manufactured by Lintec) was attached to one side of the wafer.

Next, a laser irradiation device (Disco's "DFL73161") was used to focus laser light onto the silicon wafer, thereby forming a modified layer within the wafer. The focus was set so that a large number of 8mm x 8mm silicon chips were formed from the wafer. Laser light was irradiated from the other side of the wafer (the side not attached to the back grinding tape).

Next, the other side of the silicon wafer is ground using a grinder, adjusting the thickness to 30μm. The grinding force is then used to split the silicon wafer at the site where the modified layer will be formed, producing multiple silicon wafers. This results in a cluster of silicon wafers neatly aligned and fixed on the back grinding tape.

Next, using a taping machine ("Adwill RAD2500" manufactured by Lintec), the semiconductor device manufacturing sheet obtained above was heated to 60°C while the film-like adhesive on the semiconductor device manufacturing sheet was attached to the other side (in other words, the ground surface) of all the aforementioned silicon wafers (silicon wafer group).

Next, the area near the periphery of the adhesive layer on the first surface of the semiconductor device manufacturing sheet attached to the silicon wafer group, where no intermediate layer is provided (the aforementioned non-laminated area), is fixed to a wafer dicing ring frame.

Next, the back grinding tape was removed from the fixed silicon wafer assembly. Using a fully automated die separation machine (Disco's "DDS2300"), the semiconductor device manufacturing wafer was cooled in a 0°C environment while being expanded parallel to the surface of the wafer, thereby cutting the film adhesive along the periphery of the silicon wafer. By securing the periphery of the semiconductor device manufacturing wafer, the entire area of the semiconductor device manufacturing wafer where the intermediate layer and film adhesive were deposited was raised 15 mm from the substrate side for expansion.

In this way, a group of silicon wafers with film adhesive is obtained in the following state: a plurality of silicon wafers with film adhesive, each having a silicon wafer and a cut film adhesive disposed on the other surface (the ground surface), are neatly arranged and fixed on the intermediate layer.

After temporarily releasing the expansion of the semiconductor device manufacturing sheet, the laminated product (i.e., the laminated sheet) consisting of the substrate, adhesive layer, and intermediate layer is expanded at room temperature in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the peripheral portion of the laminated sheet, where the silicon wafer with the film-like adhesive is not placed, is heated. This shrinks the peripheral portion, and the width of the kerf between adjacent silicon wafers on the laminated sheet is maintained at a constant value or greater.

[Evaluation of the Cutting Properties of Film Adhesives]

During the production of the aforementioned silicon wafer group with film adhesive, the resulting silicon wafer group with film adhesive was observed from above the side of the silicon wafer using a digital microscope ("VH-Z100" manufactured by Keyence Corporation). Furthermore, the number of the following cut lines was confirmed, and the cutability of the film adhesive was evaluated according to the following evaluation criteria: the cut lines extending in one direction, which would necessarily form if the film adhesive were normally cut by expanding the semiconductor device manufacturing sheet, and the cut lines extending in a direction orthogonal to the direction, as well as the cut lines that were not actually formed and the cut lines that were incompletely formed. The results are shown in Table 1.

[Evaluation Criteria]

A: The total number of cut lines where the film adhesive was not actually formed and the cut lines where the film adhesive was not fully formed is 5 or less.

B: The total number of cut lines where the film adhesive was not actually formed and the cut lines where the film adhesive was not fully formed is 6 or more.

[Evaluation of the Pickup Properties of Silicon Wafers with Film Adhesives After Expansion]

After evaluating the cutability of the film adhesive, a group of silicon wafers coated with film adhesive and a die-bonding device ("PU100" manufactured by Fasford Technology) were used to pick up the film adhesive-coated silicon wafers from the middle layer of the laminated wafer at a lift height of 250μm, a lift speed of 5mm/s, and a lift time of 500ms. The evaluation was "A" if all film adhesive-coated silicon wafers were picked up normally, and "B" if more than one film adhesive-coated silicon wafer could not be picked up normally. The results are shown in Table 1.

[Determination of T-peel strength between the intermediate layer and the film adhesive]

The release film is removed from the semiconductor device manufacturing sheet obtained above.

The entire surface of the semiconductor device manufacturing sheet, with the film adhesive exposed, was bonded to the adhesive surface of a polyethylene terephthalate-layered adhesive tape ("PET50(A)PL thin 8LK" manufactured by Lintec). The resulting laminate was cut into 50 mm x 100 mm pieces to prepare test pieces.

In accordance with JIS K6854-3, the laminate of the substrate, adhesive layer, and intermediate layer (i.e., the laminated sheet) was peeled off from the laminate of the film adhesive and adhesive tape. The maximum peel force (mN/50mm) measured during this process was used as the T-peel strength. The peeling speed was set at 50 mm/min. The results are shown in Table 1.

[Production and Evaluation of Sheets for Semiconductor Device Manufacturing (1)]

[Reference Example 2]

A wafer for semiconductor device manufacturing was produced and evaluated using the same method as Reference Example 1, except for the aforementioned changes, with the amount of interlayer-forming composition applied increased and the thickness of the interlayer set to 80 μm instead of 20 μm. The results are shown in Table 1.

[Reference Example 3]

When preparing the interlayer-forming composition, the aforementioned siloxane compound was omitted, and the amount of the aforementioned ethylene-vinyl acetate copolymer used was reduced to 16.5 g instead of 15 g (in other words, the siloxane compound was replaced with the same mass of the aforementioned ethylene-vinyl acetate copolymer, and only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). A wafer for semiconductor device fabrication was produced and evaluated using the same method as Reference Example 1, except for the above-mentioned differences. The results are shown in Table 1. "-" in the additive column in Table 1 indicates that the additive was not used.

[Comparative example 1]

When preparing the interlayer-forming composition, an ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of vinyl acetate-derived units 25% by mass) was used in place of the aforementioned ethylene-vinyl acetate copolymer. The amount of interlayer-forming composition applied was increased, and the thickness of the interlayer was set to 80 μm instead of 20 μm. A wafer for semiconductor device fabrication was produced and evaluated using the same method as Reference Example 1, except for the above-mentioned differences. The results are shown in Table 1.

[Comparative example 2]

When preparing the interlayer-forming composition, a sheet for semiconductor device fabrication was produced and evaluated using the same method as in Reference Example 1, except that an equivalent amount of ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 200,000, content of vinyl acetate-derived units 25% by mass) was used instead of the aforementioned ethylene-vinyl acetate copolymer. The results are shown in Table 1.

The above results indicate that in Reference Examples 1 to 3, the generation of cutting chips during blade cutting was suppressed, and poor cutting of the film adhesive during expansion was suppressed, resulting in excellent silicon wafer separation suitability.

In Reference Examples 1 to 3, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as the main component in the intermediate layer of the semiconductor device manufacturing sheet is 30,000.

Furthermore, in Reference Examples 1 to 3, the content of the ethylene-vinyl acetate copolymer in the intermediate layer was 90.9% by mass or greater relative to the total mass of the intermediate layer, and the content of the siloxane compound was 9.1% by mass or less relative to the total mass of the intermediate layer.

In addition, Reference Examples 1 and 2 further demonstrated excellent pick-up performance for silicon wafers with film adhesives after expansion.

In Reference Examples 1 and 2, the T-peel strength between the interlayer and the film adhesive was moderately low, below 100 mN/50 mm. Furthermore, the silicon concentration ratio in the interlayer was moderately high, reaching 9%. These evaluation results match the aforementioned evaluation results for the pickup properties of silicon wafers with film adhesives.

In Reference Example 3, the intermediate layer in the semiconductor device manufacturing sheet does not contain the aforementioned siloxane compound.

The only difference between the semiconductor device manufacturing sheets of Reference Examples 1 and 2 is the thickness of the interlayer. The T-shaped peel strength between the interlayer and the film adhesive is weaker in the semiconductor device manufacturing sheet of Reference Example 2 than in the semiconductor device manufacturing sheet of Reference Example 1. Therefore, the pick-up of silicon wafers with film adhesive is easier in Reference Example 2 than in Reference Example 1. The reason is presumably that, even though the ratio (mass %) of the siloxane compound content in the interlayer relative to the total mass of the interlayer is the same in Reference Examples 1 and 2, the content (mass %) of the siloxane compound in the interlayer is greater in Reference Example 2 than in Reference Example 1. Furthermore, the siloxane compound in the interlayer tends to be concentrated on both surfaces of the interlayer and its surrounding areas. Therefore, the amount of siloxane compound concentrated on both surfaces of the interlayer and its surrounding areas is also greater in Reference Example 2 than in Reference Example 1.

Furthermore, in Reference Examples 1 to 3, no nitrogen was detected when XPS analysis was performed on the exposed surface of the intermediate layer.

In contrast, in Comparative Examples 1 and 2, the generation of cutting chips during blade dicing was not suppressed, resulting in poor silicon wafer separation suitability.

In Comparative Examples 1 and 2, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as the main component in the intermediate layer of the semiconductor device manufacturing sheet is 200,000.

Furthermore, the only difference between the semiconductor device manufacturing sheets of Comparative Examples 1 and 2 is the thickness of the interlayer. The relationship between the T-peel strength between the interlayer and the film adhesive in Comparative Examples 1 and 2 shows the same tendency as that in Reference Examples 1 and 2.

In addition, in Comparative Examples 1 and 2, no nitrogen was detected when XPS analysis was performed on the exposed surface of the intermediate layer.

[Example 1]

[Manufacturing and evaluation of semiconductor device manufacturing sheets (2)]

No silicone compounds were added to the interlayer-forming composition. Instead, carbon black ("MA600B" manufactured by Mitsubishi Chemical Corporation) was added as a colorant. The carbon black content in the interlayer-forming composition was 0.5% by mass relative to the total content of all components excluding the solvent (100% by mass).

In addition, when preparing the intermediate layer-forming composition, ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of units derived from vinyl acetate 20% by mass) was used instead of ethylene-vinyl acetate copolymer (EVA, weight-average molecular weight 30,000, content of units derived from vinyl acetate 25% by mass).

In addition, the amount of adhesive composition applied was increased, and the thickness of the adhesive layer was changed to 20μm.

Except for these points, a sheet for manufacturing a semiconductor device was produced in the same manner as in Reference Example 3.

[Determination of total light transmittance]

During the film adhesive production process, the total light transmittance (%) of the film adhesive with a release film (7 μm thickness), the intermediate layer with a release film (20 μm thickness), and the first intermediate layer (the support sheet with a release film) was measured using a haze meter (NDH7000, manufactured by Nippon Denshoku Industries) in accordance with JIS K7361-1:1997. The results are shown in Table 2.

[Identification of intermediate layer or film adhesive]

During the secondary stamping process in the manufacture of the aforementioned semiconductor device manufacturing sheet, sensors were used to identify the interlayer or film adhesive in the third interlayer to evaluate whether the secondary stamping process could be performed normally. The results are shown in Table 2.

[Evaluation Criteria]

A: Secondary stamping can be performed normally.

B: Secondary stamping cannot be performed normally.

[Evaluation of the dispersion suppression properties of film-like adhesives during expansion]

Silicon wafers with film adhesives were manufactured using the method described in [Evaluation of the effect of suppressing chip generation during blade cutting] in [Manufacturing and evaluation of wafers for semiconductor device manufacturing (1)].

During the production of the aforementioned silicon wafers with film adhesive, the resulting silicon wafers with film adhesive were visually inspected from above the sides of the wafers. Furthermore, the presence of scattering film adhesive adhered to the circuit-forming surfaces of the silicon wafers was checked. The scattering suppression properties of the film adhesive were evaluated according to the following evaluation criteria. The results are shown in Table 2.

[Evaluation Criteria]

A: The number of silicon wafers where film adhesive was observed to adhere to the circuit formation surface was 0.

B: The number of silicon wafers where film adhesive was observed to be attached to the circuit formation surface was one or more.

[Evaluation of shear bond strength of silicon wafers with film adhesives]

First, using a taping machine ("Adwill RAD2500" manufactured by Lintec), the semiconductor device manufacturing sheet was heated to 60°C and then attached to the polished surface of a dry-polished (#2000) silicon wafer (150 mm diameter, 350 μm thickness) via the film adhesive on the semiconductor device manufacturing sheet.

Next, the silicon wafer was cut into 2mm x 2mm pieces using a dicing device ("DFD651" manufactured by Disco) at 50mm/second, 30,000rpm, to obtain chips.

Next, the wafer with the semiconductor device manufacturing sheet attached was pressed against a copper plate at 150°C, 0.98N (100gf), and 1 second.

The wafer was then heated in a heating oven at 175°C for 5 hours to thermally cure the film adhesive on the semiconductor device manufacturing sheet. The shear bond strength (N/2mm) was then measured at room temperature using an adhesion tester (Dage 4000 Series, manufactured by Dage). Nine measurements were performed, and the lowest value was recorded. The results are shown in Table 2.

[Example 2]

No carbon black was added to the intermediate layer-forming composition, but carbon black was added to the adhesive composition. The carbon black content in the adhesive composition was 0.5% by mass relative to the total mass of all components excluding the solvent (100% by mass). Except for these features, a sheet for semiconductor device manufacturing was produced and evaluated in the same manner as in Example 1. The results are shown in Table 2.

[Example 3]

During the primary stamping process of the aforementioned semiconductor device manufacturing wafer, a second intermediate laminate with a release film was produced. This second intermediate laminate with a release film was constructed by sequentially laminating a film adhesive (7 μm thick), an intermediate layer (20 μm thick), and a release film in the thickness direction. The planar shape of the wafer was circular (330 mm diameter). Except for this, the wafer was manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[Example 4]

During the primary stamping process of the aforementioned semiconductor device manufacturing sheet manufacturing step, the following second intermediate laminated product with a release film is produced. The second intermediate laminated product with a release film is constructed by laminating a film adhesive, an intermediate layer, and a release film on the release film side in this order in the thickness direction, and has a circular planar shape (diameter 155 mm).

In addition, during the secondary stamping process in the manufacturing step of the semiconductor device manufacturing sheet, a cutting blade (207 mm) is used to stamp the support sheet so that its planar shape becomes circular (diameter 207 mm).

In addition, in the production of the aforementioned silicon wafer group with film adhesive, a circular silicon wafer with a diameter of 150mm and a thickness of 775μm was used.

Except for the above three aspects, wafers for semiconductor device manufacturing were manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[Example 5]

During the primary stamping process of the aforementioned semiconductor device manufacturing sheet manufacturing step, the following second intermediate laminated product with a release film is produced. The second intermediate laminated product with a release film is constructed by laminating a film adhesive, an intermediate layer, and a release film on the release film side in this order in the thickness direction, and has a circular planar shape (diameter 205 mm).

In addition, during the secondary stamping process of the semiconductor device manufacturing sheet, a cutting blade (270 mm) was used to stamp the support sheet so that its planar shape became circular (270 mm in diameter).

In addition, in the production of the aforementioned silicon wafer group with film adhesive, a circular silicon wafer with a diameter of 200mm and a thickness of 775μm was used.

Except for the above three aspects, wafers for semiconductor device manufacturing were manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[Comparative example 3]

Carbon black is then added to the adhesive composition. The carbon black content in the adhesive composition is 1.0 mass% relative to the total mass of all components excluding the solvent (100 mass%).

Except for the above aspects, wafers for semiconductor device manufacturing were produced and evaluated using the same method as in Example 1. The results are shown in Table 2.

[Comparative example 4]

Reduce the amount of carbon black added to the interlayer-forming composition. The carbon black content in the interlayer-forming composition is 0.1% by mass relative to the total content of all components excluding the solvent (100% by mass).

Except for the above aspects, wafers for semiconductor device manufacturing were produced and evaluated using the same method as in Example 1. The results are shown in Table 2.

In Examples 1 to 5, the total light transmittance of at least one selected from the group consisting of the intermediate layer and the film-shaped adhesive is 60% or less. Furthermore, in Examples 1 to 5, the total light transmittance of at least one selected from the group consisting of the intermediate layer and the film-shaped adhesive is less than the total light transmittance of the support sheet composed of the substrate and the adhesive layer.

In Examples 1 to 5, during the secondary stamping process, sensors can be used to identify the intermediate layer or film adhesive, allowing the secondary stamping process to proceed normally.

In contrast, in Comparative Example 3, the total light transmittance of the intermediate layer and the film-like adhesive is greater than that of the support sheet.

In addition, in Comparative Example 4, the total light transmittance of the intermediate layer and film adhesive exceeded 60%.

In Comparative Examples 3 and 4, the sensor was unable to identify the intermediate layer or film adhesive during the secondary stamping process, preventing the secondary stamping process from proceeding properly.

In Comparative Examples 3 and 4, alignment was performed visually, and punching was performed manually. The resulting semiconductor device manufacturing sheet was attached to a silicon wafer, and the film adhesive's scattering suppression and the shear bond strength of the silicon wafer with the film adhesive were evaluated.

In Examples 1 and 2 and Comparative Examples 3 and 4, the planar shape of the semiconductor device manufacturing sheet was circular (diameter 305 mm), and the film adhesive's scattering suppression rating was A.

In Example 4, the planar shape of the semiconductor device manufacturing sheet was circular (diameter 155 mm), and the film adhesive's scattering suppression performance was rated A.

In Example 5, the planar shape of the semiconductor device manufacturing sheet was circular (diameter 205 mm), and the film adhesive's scattering suppression performance was rated A.

In contrast, in Example 3, the planar shape of the semiconductor device manufacturing sheet was circular (diameter 330 mm), and the film adhesive's scattering suppression performance was rated B.

In Examples 1 to 2, Examples 4 to 5, and Comparative Examples 3 to 4, it is believed that the region of the semiconductor device manufacturing sheet where the silicon wafer is not placed is narrow, thus suppressing the scattering of the film adhesive during expansion.

In contrast, in Example 3, it is thought that the film adhesive is easily scattered during expansion because the area of the semiconductor device manufacturing sheet where the silicon wafer is not placed is large.

In Examples 1, 3 to 5, and Comparative Examples 3 to 4, the adhesive composition did not contain carbon black, and the minimum shear bond strength was 40 N/2 mm.

In contrast, in Example 2, the adhesive composition contains carbon black, and the minimum shear strength is 30N/2mm□.

[Industrial Availability]

The present invention can be used to manufacture semiconductor devices.

Claims (6)

A sheet for manufacturing semiconductor devices comprises: a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive; The adhesive layer, the intermediate layer, and the film-like adhesive are sequentially stacked on the substrate; The substrate, the adhesive layer, the intermediate layer, and the film-like adhesive are arranged in concentric circles; The maximum width of the intermediate layer is less than the maximum width of the adhesive layer and the maximum width of the substrate; The maximum width of the film-like adhesive is less than the maximum width of the adhesive layer and the maximum width of the substrate; The width of the intermediate layer, the width of the film-like adhesive, the width of the adhesive layer, and the width of the substrate respectively refer to the width in a direction parallel to the first surface of the intermediate layer, the width in a direction parallel to the first surface of the film-like adhesive, the width in a direction parallel to the first surface of the adhesive layer, and the width in a direction parallel to the first surface of the substrate. The intermediate layer contains a non-silicone resin having a weight-average molecular weight of 100,000 or less as a main component. The total light transmittance of one or more selected from the group consisting of the intermediate layer and the film-like adhesive is 60% or less. The total light transmittance of one or more materials selected from the group consisting of the intermediate layer and the film-like adhesive is less than the total light transmittance of the support sheet composed of the substrate and the adhesive layer. The semiconductor device manufacturing sheet as recited in claim 1, wherein the total light transmittance of the supporting sheet is 70% or greater. In the semiconductor device manufacturing sheet as recited in claim 1 or 2, the maximum width of the intermediate layer and the maximum width of the film adhesive are between 150 mm and 160 mm. In the semiconductor device manufacturing sheet as recited in claim 1 or 2, the maximum width of the intermediate layer and the maximum width of the film adhesive are between 200 mm and 210 mm. In the semiconductor device manufacturing sheet as recited in claim 1 or 2, the maximum width of the intermediate layer and the maximum width of the film adhesive are between 300 mm and 310 mm. A method for manufacturing a semiconductor chip with a film-like adhesive, wherein the semiconductor chip with a film-like adhesive comprises a semiconductor chip and a film-like adhesive disposed on the inner surface of the semiconductor chip. The method comprises the following steps: Irradiating the semiconductor wafer with laser light by focusing it to a focal point set within the interior of the semiconductor wafer, thereby forming a modified layer within the interior of the semiconductor wafer; Grinding the inner surface of the semiconductor wafer after forming the modified layer, and utilizing the force applied to the semiconductor wafer during grinding to separate the semiconductor wafer at the portion where the modified layer was formed, thereby obtaining a semiconductor chip group in which a plurality of semiconductor chips are neatly arranged; The steps of heating the semiconductor device manufacturing sheet as recited in any one of claims 1 to 5 while applying a film adhesive to the inner surfaces of all semiconductor chips in the group of semiconductor chips; cooling the semiconductor device manufacturing sheet after being applied to the semiconductor chips while stretching the sheet in a direction parallel to the surface of the semiconductor device manufacturing sheet to cut the film adhesive along the outer periphery of the semiconductor chips, thereby obtaining a group of semiconductor chips with film adhesive in which a plurality of semiconductor chips with film adhesive are neatly arranged on the intermediate layer; and removing the semiconductor chips with film adhesive from the intermediate layer and picking up the semiconductor chips with film adhesive.