TWI900078B - Pixel circuit - Google Patents
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Abstract
Description
本揭露是關於一種畫素電路,且特別是關於一種具備驅動電流補償功能的畫素電路。The present disclosure relates to a pixel circuit, and more particularly to a pixel circuit with a driving current compensation function.
微發光二極體(Micro LED)可以自主發光,不須背光模組或液晶層,不僅省電,更具有高效率、高亮度、高解析度、高色彩飽和度及反應時間快等特點,且還具低耗能、機構簡易、體積小、薄型等優勢,使得微發光二極體顯示器被視為下一代主流顯示器產品的熱門技術之一。Micro LEDs can generate their own light, eliminating the need for a backlight module or liquid crystal layer. These devices are not only energy-efficient but also boast high efficiency, high brightness, high resolution, high color saturation, and fast response times. Their low energy consumption, simple structure, small size, and thin profile make them a popular technology for the next generation of mainstream display products.
然而,隨著微發光二極體的點亮時間增長,微發光二極體的溫度會逐漸升高,這會造成微發光二極體的亮度及發光效率下降。因此,如何改善上述問題為此領域技術人員所關心的議題。However, as the lighting time of the micro-LED increases, the temperature of the micro-LED gradually increases, which causes the brightness and luminous efficiency of the micro-LED to decrease. Therefore, how to improve the above problem has become a concern of technical personnel in this field.
本揭露至少一實施例提供一種畫素電路,包括驅動電晶體、發光元件及電壓訊號反饋電路。發光元件耦接驅動電晶體以根據驅動電晶體所提供的驅動電流而發光。電壓訊號反饋電路耦接於驅動電晶體的閘極端與發光元件的陽極端之間。電壓訊號反饋電路包括多個電晶體與一電容,電容串聯耦接所述多個電晶體之至少一者,電壓訊號反饋電路用以於畫素電路的發光期間將發光元件的陽極端的電壓透過電容而反饋至驅動電晶體的閘極端,以對於驅動電流進行電流補償。At least one embodiment of the present disclosure provides a pixel circuit comprising a drive transistor, a light-emitting element, and a voltage signal feedback circuit. The light-emitting element is coupled to the drive transistor to emit light in response to a drive current provided by the drive transistor. The voltage signal feedback circuit is coupled between a gate terminal of the drive transistor and an anode terminal of the light-emitting element. The voltage signal feedback circuit includes multiple transistors and a capacitor. The capacitor is coupled in series with at least one of the multiple transistors. During the pixel circuit's light-emitting period, the voltage signal feedback circuit is used to feed back the voltage at the anode terminal of the light-emitting element through the capacitor to the gate terminal of the drive transistor to compensate for the drive current.
在本揭露至少一實施例中,上述多個電晶體包括第一電晶體、第二電晶體與第三電晶體,第一電晶體的源極端耦接第三電晶體的源極端,且第一電晶體的汲極端耦接第三電晶體的汲極端,第一電晶體與第三電晶體耦接於發光元件的陽極端與電容的第一端之間,電容的第二端耦接驅動電晶體的閘極端,第二電晶體的第一端耦接至發光元件的陽極端,第二電晶體的第二端耦接至系統低電壓端或起始電壓端。In at least one embodiment of the present disclosure, the plurality of transistors include a first transistor, a second transistor, and a third transistor. The source terminal of the first transistor is coupled to the source terminal of the third transistor, and the drain terminal of the first transistor is coupled to the drain terminal of the third transistor. The first transistor and the third transistor are coupled between the anode terminal of the light-emitting element and the first terminal of the capacitor. The second terminal of the capacitor is coupled to the gate terminal of the drive transistor. The first terminal of the second transistor is coupled to the anode terminal of the light-emitting element, and the second terminal of the second transistor is coupled to a system low voltage terminal or a starting voltage terminal.
在本揭露至少一實施例中,上述畫素電路更包括發光控制電晶體,串聯耦接於驅動電晶體與發光元件之間。發光控制電晶體與第一電晶體皆受控於發光控制訊號,發光控制訊號用以於畫素電路的發光期間導通發光控制電晶體與第一電晶體。第二電晶體與第三電晶體皆受控於第一掃描訊號,第一掃描訊號用以於畫素電路的重置期間與補償期間導通第二電晶體與第三電晶體。In at least one embodiment of the present disclosure, the pixel circuit further includes a light-emission control transistor coupled in series between the driver transistor and the light-emitting element. The light-emission control transistor and the first transistor are both controlled by a light-emission control signal, which turns them on during the pixel circuit's light-emission period. The second and third transistors are both controlled by a first scanning signal, which turns them on during the pixel circuit's reset and compensation periods.
在本揭露至少一實施例中,上述第二電晶體與第三電晶體皆受控於第一掃描訊號,第一掃描訊號用以於畫素電路的重置期間與補償期間導通第二電晶體與第三電晶體。第一電晶體受控於第二掃描訊號,第二掃描訊號用以於畫素電路的發光期間的至少一時間段導通第一電晶體。In at least one embodiment of the present disclosure, the second and third transistors are both controlled by a first scanning signal, which turns on the second and third transistors during the pixel circuit's reset and compensation periods. The first transistor is controlled by a second scanning signal, which turns on the first transistor during at least one portion of the pixel circuit's light-emitting period.
在本揭露至少一實施例中,上述畫素電路更包括寫入電晶體、電容與重置電晶體。寫入電晶體的第一端用以接收資料訊號。電容耦接於寫入電晶體的第二端與驅動電晶體的閘極端之間。重置電晶體耦接於寫入電晶體的第二端與參考高電壓端之間。重置電晶體受控於第三掃描訊號,第三掃描訊號用以於畫素電路的重置期間導通重置電晶體。In at least one embodiment of the present disclosure, the pixel circuit further includes a write transistor, a capacitor, and a reset transistor. The first terminal of the write transistor is configured to receive a data signal. The capacitor is coupled between the second terminal of the write transistor and the gate terminal of the drive transistor. The reset transistor is coupled between the second terminal of the write transistor and a reference high voltage terminal. The reset transistor is controlled by a third scanning signal, which is configured to turn on the reset transistor during a reset period of the pixel circuit.
在本揭露至少一實施例中,上述發光元件為微發光二極體(Micro LED),驅動電晶體與所述多個電晶體皆為P型金屬氧化物半導體場效電晶體(MOSFET)。In at least one embodiment of the present disclosure, the light-emitting element is a micro-light-emitting diode (Micro LED), and the driving transistor and the plurality of transistors are all P-type metal oxide semiconductor field effect transistors (MOSFET).
本揭露至少一實施例另提供一種畫素電路,包括驅動電晶體、發光元件、電容及電壓訊號反饋電路。發光元件耦接驅動電晶體以根據驅動電晶體所提供的驅動電流而發光。電壓訊號反饋電路與電容串聯而耦接於驅動電晶體的閘極端與發光元件的陰極端之間。電壓訊號反饋電路包括彼此耦接的多個電晶體。於畫素電路的發光期間,發光元件的陽極端的電壓被反饋至驅動電晶體的源極端,且電壓訊號反饋電路用以將發光元件的陰極端的電壓透過電容而反饋至驅動電晶體的閘極端,以對於驅動電流進行電流補償。At least one embodiment of the present disclosure further provides a pixel circuit comprising a driver transistor, a light-emitting element, a capacitor, and a voltage signal feedback circuit. The light-emitting element is coupled to the driver transistor to emit light in response to a driving current provided by the driver transistor. The voltage signal feedback circuit is connected in series with the capacitor and coupled between the gate terminal of the driver transistor and the cathode terminal of the light-emitting element. The voltage signal feedback circuit includes a plurality of transistors coupled to each other. During the pixel circuit's light-emitting period, the voltage at the anode of the light-emitting element is fed back to the source of the drive transistor, and the voltage signal feedback circuit is used to feed back the voltage at the cathode of the light-emitting element to the gate of the drive transistor through a capacitor to compensate for the drive current.
在本揭露至少一實施例中,上述多個電晶體包括第一電晶體與第二電晶體,第一電晶體與電容串聯而耦接於驅動電晶體的閘極端與發光元件的陰極端之間,第二電晶體的第一端耦接於第一電晶體與電容之間,第二電晶體的第二端耦接至起始電壓端。In at least one embodiment of the present disclosure, the plurality of transistors include a first transistor and a second transistor. The first transistor is connected in series with a capacitor and coupled between the gate terminal of the drive transistor and the cathode terminal of the light-emitting element. The first terminal of the second transistor is coupled between the first transistor and the capacitor, and the second terminal of the second transistor is coupled to the starting voltage terminal.
在本揭露至少一實施例中,上述畫素電路更包括第一發光控制電晶體,串聯耦接於驅動電晶體與發光元件之間。第一發光控制電晶體與第一電晶體皆受控於第一發光控制訊號,第一發光控制訊號用以於畫素電路的發光期間導通第一發光控制電晶體與第一電晶體。第二電晶體受控於第一掃描訊號,第一掃描訊號用以於畫素電路的重置期間導通第二電晶體。In at least one embodiment of the present disclosure, the pixel circuit further includes a first light-emission control transistor coupled in series between the driver transistor and the light-emitting element. Both the first light-emission control transistor and the first transistor are controlled by a first light-emission control signal, which is used to turn on the first light-emission control transistor and the first transistor during the pixel circuit's light-emission period. A second transistor is controlled by a first scanning signal, which is used to turn on the second transistor during the pixel circuit's reset period.
在本揭露至少一實施例中,上述畫素電路更包括第二發光控制電晶體與第一重置電晶體,第二發光控制電晶體串聯耦接於系統高電壓端與驅動電晶體之間。第一重置電晶體的第一端耦接於第二發光控制電晶體與驅動電晶體之間,第一重置電晶體的第二端耦接至驅動電晶體的閘極端。In at least one embodiment of the present disclosure, the pixel circuit further includes a second light-emission control transistor and a first reset transistor. The second light-emission control transistor is coupled in series between the system high voltage terminal and the drive transistor. A first terminal of the first reset transistor is coupled between the second light-emission control transistor and the drive transistor, and a second terminal of the first reset transistor is coupled to the gate terminal of the drive transistor.
在本揭露至少一實施例中,上述第一重置電晶體為銦鎵鋅氧化物(IGZO)電晶體。In at least one embodiment of the present disclosure, the first reset transistor is an indium gallium zinc oxide (IGZO) transistor.
在本揭露至少一實施例中,上述畫素電路更包括第二重置電晶體,耦接於系統高電壓端與驅動電晶體的閘極端之間。第二重置電晶體受控於第一掃描訊號,第一掃描訊號用以於畫素電路的重置期間導通第二重置電晶體。In at least one embodiment of the present disclosure, the pixel circuit further includes a second reset transistor coupled between the system high voltage terminal and the gate terminal of the drive transistor. The second reset transistor is controlled by a first scanning signal, which is used to turn on the second reset transistor during a reset period of the pixel circuit.
在本揭露至少一實施例中,上述第二重置電晶體為銦鎵鋅氧化物電晶體。In at least one embodiment of the present disclosure, the second reset transistor is an indium gallium zinc oxide transistor.
在本揭露至少一實施例中,上述發光元件為微發光二極體,驅動電晶體與所述多個電晶體皆為N型金屬氧化物半導體場效電晶體。In at least one embodiment of the present disclosure, the light-emitting element is a micro-luminescent diode, and the driving transistor and the plurality of transistors are all N-type metal oxide semiconductor field effect transistors.
為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present disclosure more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.
以下仔細討論本揭露的實施例。然而,可以理解的是,實施例提供許多可應用的概念,其可實施於各式各樣的特定內容中。所討論、揭示之實施例僅供說明,並非用以限定本揭露之範圍。關於本文中所使用之「第一」、「第二」等,並非特別指次序或順位的意思,其僅為了區別以相同技術用語描述的元件或操作。The following discusses embodiments of the present disclosure in detail. However, it should be understood that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific contexts. The embodiments discussed and disclosed are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The terms "first," "second," etc., used herein, do not specifically denote a sequence or order; they are used solely to distinguish between elements or operations described using the same technical terminology.
圖1係根據本揭露的第一實施例至第六實施例之畫素電路的示意圖。圖1所示的畫素電路包括驅動電晶體T1、初始化電晶體T2、寫入電晶體T3、補償電晶體T4與T5、發光控制電晶體T6、重置電晶體T7、電容C1、發光元件L1及電壓訊號反饋電路120。其中,發光元件L1為電流驅動元件,例如為微發光二極體(Micro LED)、有機發光二極體(OLED),但本揭露不限於此。具體而言,圖1所示的畫素電路適用於微發光二極體顯示器或有機發光二極體,但本揭露不限於此。FIG1 is a schematic diagram of a pixel circuit according to the first to sixth embodiments of the present disclosure. The pixel circuit shown in FIG1 includes a drive transistor T1, an initialization transistor T2, a write transistor T3, compensation transistors T4 and T5, a light-emitting control transistor T6, a reset transistor T7, a capacitor C1, a light-emitting element L1, and a voltage signal feedback circuit 120. The light-emitting element L1 is a current-driven element, such as a micro-LED or an organic light-emitting diode (OLED), but the present disclosure is not limited thereto. Specifically, the pixel circuit shown in FIG1 is suitable for use in a micro-LED display or an organic light-emitting diode, but the present disclosure is not limited thereto.
其中,驅動電晶體T1、發光控制電晶體T6與發光元件L1構成圖1所示的畫素電路的發光電路。驅動電晶體T1具有用以接收資料訊號Data的閘極端G,發光控制電晶體T6具有用以接收發光控制訊號EM的閘極端。發光控制電晶體T6串聯耦接於驅動電晶體T1與發光元件L1之間。具體而言,發光元件L1與驅動電晶體T1、發光控制電晶體T6串聯而耦接在系統高電壓端VDD與系統低電壓端VSS之間,以形成一電流路徑。The driver transistor T1, the emission control transistor T6, and the light-emitting element L1 constitute the light-emitting circuit of the pixel circuit shown in Figure 1. The driver transistor T1 has a gate terminal G for receiving the data signal Data, and the emission control transistor T6 has a gate terminal for receiving the emission control signal EM. The emission control transistor T6 is coupled in series between the driver transistor T1 and the light-emitting element L1. Specifically, the light-emitting element L1, the driver transistor T1, and the emission control transistor T6 are coupled in series between the system high voltage terminal VDD and the system low voltage terminal VSS, forming a current path.
其中,初始化電晶體T2、寫入電晶體T3、補償電晶體T4與T5、重置電晶體T7與電容C1構成圖1所示的畫素電路的控制與補償電路。重置電晶體T7具有用以接收掃描訊號S1的閘極端,初始化電晶體T2具有用以接收發光控制訊號EM的閘極端,寫入電晶體T3與補償電晶體T4與T5具有用以接收掃描訊號S2的閘極端。The initialization transistor T2, write transistor T3, compensation transistors T4 and T5, reset transistor T7, and capacitor C1 form the control and compensation circuit of the pixel circuit shown in Figure 1. Reset transistor T7 has a gate terminal for receiving scanning signal S1, initialization transistor T2 has a gate terminal for receiving emission control signal EM, and write transistor T3 and compensation transistors T4 and T5 have gate terminals for receiving scanning signal S2.
其中,寫入電晶體T3的第一端用以接收資料訊號Data,電容C1耦接於寫入電晶體T3的第二端B與驅動電晶體T1的閘極端G之間,初始化電晶體T2耦接於寫入電晶體T3的第二端B與參考電壓端Vp之間。The first terminal of the write transistor T3 is used to receive the data signal Data, the capacitor C1 is coupled between the second terminal B of the write transistor T3 and the gate terminal G of the drive transistor T1, and the initialization transistor T2 is coupled between the second terminal B of the write transistor T3 and the reference voltage terminal Vp.
於圖1所示的畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T7導通,使得重置電晶體T7的一端會被重置電晶體T7的另一端所耦接的起始電壓端Vini的電壓所重置。During the reset period of the pixel circuit shown in FIG1 , the scanning signal S1 is controlled to turn on the reset transistor T7 so that one end of the reset transistor T7 is reset by the voltage of the starting voltage terminal Vini to which the other end of the reset transistor T7 is coupled.
於圖1所示的畫素電路的補償期間,控制掃描訊號S1以使重置電晶體T7關斷,另一方面,控制掃描訊號S2以使寫入電晶體T3與補償電晶體T4與T5導通,使得電容C1耦接寫入電晶體T3的一端(即寫入電晶體T3的第二端B)接收資料訊號Data,並且補償電晶體T4與T5形成充電路徑,使得電容C1耦接補償電晶體T4的一端(即驅動電晶體T1的閘極端G)被充電至達到系統高電壓端VDD(即驅動電晶體T1的源極端耦接系統高電壓端VDD)的電壓與驅動電晶體T1的臨界電壓的差值(即VDD-|Vth|,也可表示為VDD+Vth,其中臨界電壓Vth為負值)。藉此,電容C1會儲存驅動電晶體T1的臨界電壓,換句話說,在圖1所示的畫素電路的補償期間,可以針對驅動電晶體T1的臨界電壓來進行補償。During the compensation period of the pixel circuit shown in FIG1 , the scanning signal S1 is controlled to turn off the reset transistor T7. On the other hand, the scanning signal S2 is controlled to turn on the write transistor T3 and the compensation transistors T4 and T5. This causes the capacitor C1 to couple to one end of the write transistor T3 (i.e., the second end B of the write transistor T3) to receive the data signal Data, and the compensation transistors T4 and T5 form a charging circuit. The diameter of the capacitor C1 is such that the terminal coupled to the compensation transistor T4 (i.e., the gate terminal G of the driver transistor T1) is charged to a voltage equal to the difference between the system high voltage terminal VDD (i.e., the source terminal of the driver transistor T1 coupled to the system high voltage terminal VDD) and the critical voltage of the driver transistor T1 (i.e., VDD - |Vth|, which can also be expressed as VDD + Vth, where the critical voltage Vth is a negative value). In this way, capacitor C1 stores the critical voltage of the driver transistor T1. In other words, during the compensation period of the pixel circuit shown in Figure 1, compensation can be provided for the critical voltage of the driver transistor T1.
於圖1所示的畫素電路的發光期間,控制發光控制訊號EM以使初始化電晶體T2與發光控制電晶體T6導通,使得電容C1耦接初始化電晶體T2的一端(即寫入電晶體T3的第二端B)會由資料訊號Data的電壓變化至參考電壓端Vp的電壓,且上述的電壓變化會由電容C1耦合至電容C1耦接驅動電晶體T1的另一端。另一方面,由於驅動電晶體T1與發光控制電晶體T6皆導通,圖1所示的畫素電路的發光電路可以產生導通電流流經發光元件L1使其發光。換言之,發光元件L1耦接驅動電晶體T1以根據驅動電晶體T1所提供的驅動電流而發光。During the luminescence period of the pixel circuit shown in Figure 1 , the luminescence control signal EM is controlled to turn on the initialization transistor T2 and the luminescence control transistor T6. This causes the voltage at one end of capacitor C1 coupled to the initialization transistor T2 (i.e., the second end B of the write transistor T3) to change from the voltage of the data signal Data to the voltage of the reference voltage terminal Vp. This voltage change is then coupled through capacitor C1 to the other end of capacitor C1 coupled to the drive transistor T1. Furthermore, because both the drive transistor T1 and the luminescence control transistor T6 are turned on, the luminescence circuit of the pixel circuit shown in Figure 1 generates a conduction current flowing through the light-emitting element L1, causing it to emit light. In other words, the light-emitting element L1 is coupled to the drive transistor T1 and emits light in response to the drive current provided by the drive transistor T1.
如圖1所示,畫素電路的電壓訊號反饋電路120耦接於驅動電晶體T1的閘極端G與發光元件L1的陽極端A之間。電壓訊號反饋電路120用以將發光元件L1的陽極端A的電壓反饋至驅動電晶體T1的閘極端G,以對於上述之驅動電流進行電流補償。As shown in Figure 1, the pixel circuit's voltage signal feedback circuit 120 is coupled between the gate terminal G of the drive transistor T1 and the anode terminal A of the light-emitting element L1. The voltage signal feedback circuit 120 is used to feed back the voltage at the anode terminal A of the light-emitting element L1 to the gate terminal G of the drive transistor T1 to compensate for the aforementioned drive current.
具體而言,電壓訊號反饋電路120之目的在於偵測發光元件L1的陽極端A的電壓,並將其反饋至驅動電晶體T1的閘極端G。如此一來,當發光元件L1因特定原因(例如高溫或老化)而導致其陽極端A的電壓發生改變時,驅動電晶體T1可以即時改變其驅動電流,以實現對於驅動電流的電流補償。舉例而言,當發光元件L1為微發光二極體且因長時間點亮而導致其因熱效應而溫度升高時,發光元件L1的順向電壓(forward voltage,Vf)會隨著溫度升高而下降,導致發光元件L1的陽極端A的電壓(即VSS+Vf)變小,與此同時,透過電壓訊號反饋電路120將發光元件L1的陽極端A的電壓反饋至驅動電晶體T1的閘極端G,從而使得驅動電晶體T1也會因為其閘極端G的電壓下降而輸出更大的驅動電流,因此發光元件L1的亮度也會隨之上升,進而達到電流補償的效果。總的來說,電壓訊號反饋電路120可以即時偵測微發光二極體(即發光元件L1)因升溫造成的電性變化並使得驅動電晶體T1增加驅動電流,以使微發光二極體(即發光元件L1)的亮度隨之增加,則可以減小因亮度差異造成的mura(亮度不均)或色偏。Specifically, the purpose of the voltage signal feedback circuit 120 is to detect the voltage at the anode terminal A of the light-emitting element L1 and feed it back to the gate terminal G of the drive transistor T1. In this way, when the voltage at the anode terminal A of the light-emitting element L1 changes due to specific reasons (such as high temperature or aging), the drive transistor T1 can immediately change its drive current to achieve current compensation for the drive current. For example, when the light-emitting element L1 is a micro-luminescent diode and its temperature rises due to thermal effects due to long-term lighting, the forward voltage (Vf) of the light-emitting element L1 will decrease as the temperature rises, causing the voltage at the anode terminal A of the light-emitting element L1 (i.e., VSS+Vf) to decrease. At the same time, the voltage at the anode terminal A of the light-emitting element L1 is fed back to the gate terminal G of the drive transistor T1 through the voltage signal feedback circuit 120. As a result, the drive transistor T1 will also output a larger drive current due to the decrease in the voltage at its gate terminal G. Therefore, the brightness of the light-emitting element L1 will also increase, thereby achieving the effect of current compensation. In general, the voltage signal feedback circuit 120 can instantly detect the electrical changes of the micro-luminescent diode (i.e., the light-emitting element L1) caused by temperature increase and cause the drive transistor T1 to increase the drive current, thereby increasing the brightness of the micro-luminescent diode (i.e., the light-emitting element L1). This can reduce mura (uneven brightness) or color shift caused by brightness differences.
圖2係根據本揭露的第一實施例之畫素電路的示意圖。圖2所示的畫素電路的電壓訊號反饋電路120包括電晶體T8、T9、T10與電容C2,其中電容C2串聯耦接電晶體T8,且電容C2串聯耦接電晶體T10。FIG2 is a schematic diagram of a pixel circuit according to the first embodiment of the present disclosure. The voltage signal feedback circuit 120 of the pixel circuit shown in FIG2 includes transistors T8, T9, and T10 and a capacitor C2, wherein capacitor C2 is coupled in series with transistor T8, and capacitor C2 is coupled in series with transistor T10.
如圖2所示,在本揭露的第一實施例中,電晶體T8的源極端耦接電晶體T10的源極端,且電晶體T8的汲極端耦接電晶體T10的汲極端,電晶體T8與電晶體T10耦接於發光元件L1的陽極端A與電容C2的第一端C之間,電容C2的第二端耦接驅動電晶體T1的閘極端G,電晶體T9的第一端耦接至發光元件L1的陽極端A,電晶體T9的第二端耦接至系統低電壓端VSS。As shown in FIG. 2 , in the first embodiment of the present disclosure, the source terminal of transistor T8 is coupled to the source terminal of transistor T10, and the drain terminal of transistor T8 is coupled to the drain terminal of transistor T10. Transistor T8 and transistor T10 are coupled between the anode terminal A of light-emitting element L1 and the first terminal C of capacitor C2. The second terminal of capacitor C2 is coupled to the gate terminal G of drive transistor T1. The first terminal of transistor T9 is coupled to the anode terminal A of light-emitting element L1, and the second terminal of transistor T9 is coupled to the system low voltage terminal VSS.
如圖2所示,在本揭露的第一實施例中,驅動電晶體T1、初始化電晶體T2、寫入電晶體T3、補償電晶體T4與T5、發光控制電晶體T6、重置電晶體T7、電晶體T8、T9、T10皆為P型金屬氧化物半導體場效電晶體(MOSFET)。As shown in FIG. 2 , in the first embodiment of the present disclosure, the drive transistor T1, the initialization transistor T2, the write transistor T3, the compensation transistors T4 and T5, the light control transistor T6, the reset transistor T7, and the transistors T8, T9, and T10 are all P-type metal oxide semiconductor field effect transistors (MOSFETs).
圖3係根據本揭露的第一實施例之畫素電路的訊號時序波形圖。如圖2與圖3所示,在本揭露的第一實施例中,電晶體T9與T10皆受控於掃描訊號S3,掃描訊號S3用以於畫素電路的重置期間與補償期間導通電晶體T9與T10。如圖2與圖3所示,在本揭露的第一實施例中,初始化電晶體T2、發光控制電晶體T6與電晶體T8皆受控於發光控制訊號EM,發光控制訊號EM用以於畫素電路的發光期間導通初始化電晶體T2、發光控制電晶體T6與電晶體T8。Figure 3 shows signal timing waveforms for the pixel circuit according to the first embodiment of the present disclosure. As shown in Figures 2 and 3, in the first embodiment of the present disclosure, transistors T9 and T10 are both controlled by a scan signal S3, which turns on transistors T9 and T10 during the pixel circuit's reset and compensation periods. As shown in Figures 2 and 3, in the first embodiment of the present disclosure, initialization transistor T2, emission control transistor T6, and transistor T8 are all controlled by an emission control signal EM, which turns on initialization transistor T2, emission control transistor T6, and transistor T8 during the pixel circuit's emission period.
如圖2與圖3所示,如上述所討論過的,掃描訊號S2用以於畫素電路的補償期間導通補償電晶體T4與T5,使得驅動電晶體T1的閘極端G被充電至VDD+Vth;掃描訊號S2用以於畫素電路的補償期間導通寫入電晶體T3,使得寫入電晶體T3的第二端B接收資料訊號Data。此外,掃描訊號S3用以於畫素電路的補償期間導通電晶體T9與T10,使得電容C2的第一端C具有系統低電壓端VSS的電壓。As shown in Figures 2 and 3 , as discussed above, scan signal S2 is used to turn on compensation transistors T4 and T5 during the pixel circuit's compensation period, charging gate G of drive transistor T1 to VDD + Vth. Scan signal S2 is also used to turn on write transistor T3 during the pixel circuit's compensation period, allowing the second terminal B of write transistor T3 to receive data signal Data. Furthermore, scan signal S3 is used to turn on transistors T9 and T10 during the pixel circuit's compensation period, causing the first terminal C of capacitor C2 to have a voltage equal to the system low-voltage terminal VSS.
接著,如圖2與圖3所示,如上述所討論過的,發光控制訊號EM用以於畫素電路的發光期間導通初始化電晶體T2,使得寫入電晶體T3的第二端B具有參考電壓端Vp的電壓。此外,發光控制訊號EM用以於畫素電路的發光期間導通發光控制電晶體T6與電晶體T8,使得電容C2的第一端C具有VSS+Vf的電壓(即此時發光元件L1的陽極端A的電壓)。Next, as shown in Figures 2 and 3 , and as discussed above, the emission control signal EM is used to turn on initialization transistor T2 during the pixel circuit's emission period, causing the second terminal B of write transistor T3 to have a voltage of reference voltage terminal Vp. Furthermore, the emission control signal EM is used to turn on emission control transistors T6 and T8 during the pixel circuit's emission period, causing the first terminal C of capacitor C2 to have a voltage of VSS + Vf (i.e., the voltage of anode terminal A of light-emitting element L1 at this time).
根據上述兩段的內容,在本揭露的第一實施例中,於畫素電路的發光期間,驅動電晶體T1的閘極端G的電壓準位會因為電容耦合效應而有對應的改變,其中上述的電容耦合效應包含:(a1)電容C1將寫入電晶體T3的第二端B的電壓變化(由資料訊號Data變為參考電壓端Vp的電壓)耦合至驅動電晶體T1的閘極端G;以及(a2)電容C2將電容C2的第一端C的電壓變化(由系統低電壓端VSS的電壓變為具有VSS+Vf的電壓)耦合至驅動電晶體T1的閘極端G,意即,電壓訊號反饋電路120用以於畫素電路的發光期間將發光元件L1的陽極端A的電壓(也可稱之為電壓變化(由系統低電壓端VSS的電壓變為具有VSS+Vf的電壓))透過電容C2的電容耦合效應而反饋至驅動電晶體T1的閘極端G。據此,於畫素電路的發光期間,驅動電晶體T1的閘極端G的電壓準位會變為如同以下式(1)所示: (1) 其中,a1=C1/(C1+C2),a2=C2/(C1+C2)。 According to the contents of the above two paragraphs, in the first embodiment of the present disclosure, during the luminescence period of the pixel circuit, the voltage level of the gate terminal G of the driving transistor T1 will change accordingly due to the capacitive coupling effect, wherein the capacitive coupling effect includes: (a1) the capacitor C1 couples the voltage change of the second terminal B of the write transistor T3 (from the data signal Data to the voltage of the reference voltage terminal Vp) to the gate terminal G of the driving transistor T1; and (a2) the capacitor C2 couples the voltage of the capacitor C2 to the gate terminal G of the driving transistor T1. The voltage change at the first terminal C (from the voltage of the system low voltage terminal VSS to a voltage of VSS+Vf) is coupled to the gate terminal G of the driving transistor T1. That is, the voltage signal feedback circuit 120 is used to feed back the voltage of the anode terminal A of the light-emitting element L1 (also referred to as the voltage change (from the voltage of the system low voltage terminal VSS to a voltage of VSS+Vf)) to the gate terminal G of the driving transistor T1 through the capacitive coupling effect of the capacitor C2 during the luminescence period of the pixel circuit. Accordingly, during the luminescence period of the pixel circuit, the voltage level of the gate terminal G of the driving transistor T1 becomes as shown in the following formula (1): (1) Where, a1=C1/(C1+C2), a2=C2/(C1+C2).
在取得驅動電晶體T1的閘極端G的電壓準位之後,可接著將其帶入驅動電晶體T1的驅動電流公式I ds=k(V GS-Vth) 2,其中k為轉導參數,V GS為閘極到源極的偏壓差。如此一來,在本揭露的第一實施例中,於畫素電路的發光期間,驅動電晶體T1的驅動電流可以表示為如同以下式(2)所示: (2) After obtaining the voltage level of the gate terminal G of the driver transistor T1, it can be substituted into the driver current formula of the driver transistor T1: I ds = k(V GS - Vth) 2 , where k is the transconductance parameter and V GS is the gate-to-source bias voltage difference. Thus, in the first embodiment of the present disclosure, during the luminescence period of the pixel circuit, the driver current of the driver transistor T1 can be expressed as shown in the following formula (2): (2)
一方面,由於式(2)包含發光元件L1的順向電壓Vf,因此可知,用以使得發光元件L1發光之驅動電晶體T1所提供的驅動電流可以針對發光元件L1的順向電壓Vf進行電流補償,意即,可以對於驅動電流進行電流補償。另一方面,由於式(2)不包含系統低電壓端VSS的電壓,因此可知,系統低電壓端VSS的電壓已經被補償。On the one hand, because equation (2) includes the forward voltage Vf of light-emitting element L1, it can be seen that the driving current provided by driver transistor T1, which is used to make light-emitting element L1 emit light, can compensate for the forward voltage Vf of light-emitting element L1. In other words, current compensation can be performed on the driving current. On the other hand, because equation (2) does not include the voltage of the system low-voltage terminal VSS, it can be seen that the voltage of the system low-voltage terminal VSS has already been compensated.
圖4係根據本揭露的第二實施例之畫素電路的示意圖。圖4所示的本揭露的第二實施例之畫素電路類似於圖2所示的本揭露的第一實施例之畫素電路,兩者的差異在於,如圖4所示,在本揭露的第二實施例中,電晶體T8是受控於掃描訊號S4而非發光控制訊號EM。FIG4 is a schematic diagram of a pixel circuit according to a second embodiment of the present disclosure. The pixel circuit of the second embodiment shown in FIG4 is similar to the pixel circuit of the first embodiment shown in FIG2 . The difference between the two is that, as shown in FIG4 , in the second embodiment of the present disclosure, transistor T8 is controlled by the scanning signal S4 rather than the emission control signal EM.
圖5係根據本揭露的第二實施例之畫素電路的訊號時序波形圖。如圖4與圖5所示,在本揭露的第二實施例中,電晶體T8受控於掃描訊號S4,掃描訊號S4用以於畫素電路的發光期間的至少一時間段導通電晶體T8。值得一提的是,在本揭露的第二實施例中,可根據使用者實際需求來調整上述之至少一時間段的時長與時間點。舉例而言,如圖5所示,掃描訊號S4用以於畫素電路的發光期間開始後的一時間段T ON導通電晶體T8,且掃描訊號S4於該時間段T ON之後關斷電晶體T8。 Figure 5 shows signal timing waveforms for a pixel circuit according to the second embodiment of the present disclosure. As shown in Figures 4 and 5, in the second embodiment of the present disclosure, transistor T8 is controlled by a scan signal S4. Scan signal S4 is used to turn on transistor T8 during at least one time period during the pixel circuit's light-emitting period. It is worth noting that in the second embodiment of the present disclosure, the duration and timing of the at least one time period can be adjusted based on actual user needs. For example, as shown in Figure 5, scan signal S4 is used to turn on transistor T8 during a time period T ON after the pixel circuit's light-emitting period begins, and scan signal S4 turns off transistor T8 after this time period T ON .
一方面,在本揭露的第二實施例中,於畫素電路的發光期間,當電晶體T8導通時,驅動電晶體T1的驅動電流將會如同以上式(2)所示。另一方面,在本揭露的第二實施例中,於畫素電路的發光期間,當電晶體T8關斷時,由於電晶體T10亦為關斷,因此驅動電晶體T1的閘極端G所受到的電容耦合效應將不再包含電容C2的電容耦合效應而僅只包含電容C1的電容耦合效應,據此,驅動電晶體T1的驅動電流可以表示為如同以下式(3)所示: (3) 由於式(3)不包含發光元件L1的順向電壓Vf,因此可知,於畫素電路的發光期間,當電晶體T8關斷時,不會對於驅動電流進行電流補償,意即,畫素電路關閉電流補償功能。 On the one hand, in the second embodiment of the present disclosure, during the luminescence period of the pixel circuit, when transistor T8 is turned on, the driving current of the driving transistor T1 will be as shown in the above formula (2). On the other hand, in the second embodiment of the present disclosure, during the luminescence period of the pixel circuit, when transistor T8 is turned off, since transistor T10 is also turned off, the capacitive coupling effect on the gate terminal G of the driving transistor T1 no longer includes the capacitive coupling effect of capacitor C2 but only includes the capacitive coupling effect of capacitor C1. Therefore, the driving current of the driving transistor T1 can be expressed as shown in the following formula (3): (3) Since formula (3) does not include the forward voltage Vf of the light-emitting element L1, it can be seen that during the light-emitting period of the pixel circuit, when the transistor T8 is turned off, no current compensation is performed on the driving current, that is, the pixel circuit turns off the current compensation function.
圖6係根據本揭露的第三實施例之畫素電路的示意圖。圖6所示的本揭露的第三實施例之畫素電路類似於圖2所示的本揭露的第一實施例之畫素電路,兩者的差異在於,如圖6所示,在本揭露的第三實施例中,電晶體T9的第二端是耦接至起始電壓端Vini而非系統低電壓端VSS。應注意的是,本揭露的第三實施例之畫素電路的訊號時序波形圖與圖3相同。Figure 6 is a schematic diagram of a pixel circuit according to a third embodiment of the present disclosure. The pixel circuit of the third embodiment shown in Figure 6 is similar to the pixel circuit of the first embodiment of the present disclosure shown in Figure 2 . The difference between the two is that, as shown in Figure 6 , the second terminal of transistor T9 is coupled to the starting voltage terminal Vini rather than the system low voltage terminal VSS. It should be noted that the signal timing waveforms of the pixel circuit of the third embodiment of the present disclosure are the same as those in Figure 3 .
如圖6與圖3所示,掃描訊號S2用以於畫素電路的補償期間導通寫入電晶體T3,使得寫入電晶體T3的第二端B接收資料訊號Data;掃描訊號S3用以於畫素電路的補償期間導通電晶體T9與T10,使得電容C2的第一端C具有起始電壓端Vini的電壓。As shown in Figures 6 and 3 , the scan signal S2 is used to turn on the write transistor T3 during the pixel circuit's compensation period, causing the second terminal B of the write transistor T3 to receive the data signal Data. The scan signal S3 is also used to turn on transistors T9 and T10 during the pixel circuit's compensation period, causing the first terminal C of the capacitor C2 to have the voltage of the starting voltage terminal Vini.
接著,如圖6與圖3所示,發光控制訊號EM用以於畫素電路的發光期間導通初始化電晶體T2,使得寫入電晶體T3的第二端B具有參考電壓端Vp的電壓;發光控制訊號EM用以於畫素電路的發光期間導通電晶體T8,使得電容C2的第一端C具有VSS+Vf的電壓(即此時發光元件L1的陽極端A的電壓)。Next, as shown in Figures 6 and 3 , the emission control signal EM is used to turn on the initialization transistor T2 during the pixel circuit's emission period, causing the second terminal B of the write transistor T3 to have a voltage of the reference voltage terminal Vp. The emission control signal EM is used to turn on the transistor T8 during the pixel circuit's emission period, causing the first terminal C of the capacitor C2 to have a voltage of VSS + Vf (i.e., the voltage of the anode terminal A of the light-emitting element L1 at this time).
根據上述兩段的內容,在本揭露的第三實施例中,於畫素電路的發光期間,驅動電晶體T1的閘極端G的電壓準位會因為電容耦合效應而有對應的改變,其中上述的電容耦合效應包含:(a1)電容C1將寫入電晶體T3的第二端B的電壓變化(由資料訊號Data變為參考電壓端Vp的電壓)耦合至驅動電晶體T1的閘極端G;以及(a2)電容C2將電容C2的第一端C的電壓變化(由起始電壓端Vini的電壓變為具有VSS+Vf的電壓)耦合至驅動電晶體T1的閘極端G。據此,於畫素電路的發光期間,驅動電晶體T1的閘極端G的電壓準位會變為如同以下式(4)所示: (4) According to the above two paragraphs, in the third embodiment of the present disclosure, during the pixel circuit's light-emitting period, the voltage level of the gate terminal G of the drive transistor T1 changes accordingly due to a capacitive coupling effect. The capacitive coupling effect includes: (a1) capacitor C1 couples the voltage change at the second terminal B of the write transistor T3 (from the data signal Data to the voltage of the reference voltage terminal Vp) to the gate terminal G of the drive transistor T1; and (a2) capacitor C2 couples the voltage change at the first terminal C of capacitor C2 (from the voltage of the starting voltage terminal Vini to a voltage of VSS+Vf) to the gate terminal G of the drive transistor T1. Therefore, during the luminescence period of the pixel circuit, the voltage level of the gate terminal G of the driving transistor T1 becomes as shown in the following formula (4): (4)
在取得驅動電晶體T1的閘極端G的電壓準位之後,可接著將其帶入驅動電晶體T1的驅動電流公式I ds=k(V GS-Vth) 2,其中k為轉導參數,V GS為閘極到源極的偏壓差。如此一來,在本揭露的第三實施例中,於畫素電路的發光期間,驅動電晶體T1的驅動電流可以表示為如同以下式(5)所示: (5) After obtaining the voltage level of the gate terminal G of the driver transistor T1, it can be substituted into the driver current formula of the driver transistor T1: I ds = k(V GS - Vth) 2 , where k is the transconductance parameter and V GS is the gate-to-source bias voltage difference. Thus, in the third embodiment of the present disclosure, during the luminescence period of the pixel circuit, the driver current of the driver transistor T1 can be expressed as shown in the following formula (5): (5)
由於式(5)包含發光元件L1的順向電壓Vf,因此可知,用以使得發光元件L1發光之驅動電晶體T1所提供的驅動電流可以針對發光元件L1的順向電壓Vf進行電流補償,意即,可以對於驅動電流進行電流補償。Since equation (5) includes the forward voltage Vf of the light-emitting element L1, it can be seen that the driving current provided by the driving transistor T1 for causing the light-emitting element L1 to emit light can be current compensated for the forward voltage Vf of the light-emitting element L1, that is, current compensation can be performed on the driving current.
圖7係根據本揭露的第四實施例之畫素電路的示意圖。圖7所示的本揭露的第四實施例之畫素電路類似於圖2所示的本揭露的第一實施例之畫素電路,兩者的差異在於,如圖7所示,在本揭露的第四實施例中,畫素電路還包括重置電晶體T11,此外,重置電晶體T7的汲極端改為耦接至驅動電晶體T1的閘極端G,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T7導通,使得驅動電晶體T1的閘極端G會被重置電晶體T7的源極端所耦接的起始電壓端Vini的電壓所重置,重置電晶體T11具有用以接收掃描訊號S1的閘極端,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T11導通,使得寫入電晶體T3的第二端B會被重置電晶體T11的一端所耦接的參考高電壓端Vref的電壓所重置,這可以使得寫入電晶體T3的第二端B在畫素電路的重置期間能夠確實地被施加參考高電壓端Vref的電壓而非為浮接(floating)狀態。應注意的是,本揭露的第四實施例之畫素電路的訊號時序波形圖與圖3相同。FIG7 is a schematic diagram of a pixel circuit according to a fourth embodiment of the present disclosure. The pixel circuit of the fourth embodiment of the present disclosure shown in FIG7 is similar to the pixel circuit of the first embodiment of the present disclosure shown in FIG2 . The difference between the two is that, as shown in FIG7 , in the fourth embodiment of the present disclosure, the pixel circuit further includes a reset transistor T11. In addition, the drain terminal of the reset transistor T7 is coupled to the gate terminal G of the drive transistor T1. During the reset period of the pixel circuit, the scanning signal S1 is controlled to turn on the reset transistor T7, so that the gate terminal G of the drive transistor T1 is connected to the starting voltage coupled to the source terminal of the reset transistor T7. The reset transistor T11 is reset by the voltage at terminal Vini. The reset transistor T11 has a gate terminal for receiving the scan signal S1. During the reset period of the pixel circuit, the scan signal S1 is controlled to turn on the reset transistor T11, causing the second terminal B of the write transistor T3 to be reset by the voltage at the reference high voltage terminal Vref coupled to one terminal of the reset transistor T11. This ensures that the voltage at the reference high voltage terminal Vref is reliably applied to the second terminal B of the write transistor T3 during the reset period of the pixel circuit, rather than being in a floating state. It should be noted that the signal timing waveform diagram of the pixel circuit of the fourth embodiment of the present disclosure is the same as that in FIG3 .
圖8係根據本揭露的第五實施例之畫素電路的示意圖。圖8所示的本揭露的第五實施例之畫素電路類似於圖4所示的本揭露的第二實施例之畫素電路,兩者的差異在於,如圖8所示,在本揭露的第五實施例中,畫素電路還包括重置電晶體T11,此外,重置電晶體T7的汲極端改為耦接至驅動電晶體T1的閘極端G,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T7導通,使得驅動電晶體T1的閘極端G會被重置電晶體T7的源極端所耦接的起始電壓端Vini的電壓所重置,重置電晶體T11具有用以接收掃描訊號S1的閘極端,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T11導通,使得寫入電晶體T3的第二端B會被重置電晶體T11的一端所耦接的參考高電壓端Vref的電壓所重置,這可以使得寫入電晶體T3的第二端B在畫素電路的重置期間能夠確實地被施加參考高電壓端Vref的電壓而非為浮接狀態。應注意的是,本揭露的第五實施例之畫素電路的訊號時序波形圖與圖5相同。FIG8 is a schematic diagram of a pixel circuit according to a fifth embodiment of the present disclosure. The pixel circuit of the fifth embodiment of the present disclosure shown in FIG8 is similar to the pixel circuit of the second embodiment of the present disclosure shown in FIG4. The difference between the two is that, as shown in FIG8, in the fifth embodiment of the present disclosure, the pixel circuit further includes a reset transistor T11. In addition, the drain terminal of the reset transistor T7 is coupled to the gate terminal G of the drive transistor T1. During the reset period of the pixel circuit, the scanning signal S1 is controlled to turn on the reset transistor T7, so that the gate terminal G of the drive transistor T1 is coupled to the source terminal of the reset transistor T7. The reset transistor T11 is reset by the voltage of the initial voltage terminal Vini. The reset transistor T11 has a gate terminal for receiving the scan signal S1. During the reset period of the pixel circuit, the scan signal S1 is controlled to turn on the reset transistor T11, so that the second terminal B of the write transistor T3 is reset by the voltage of the reference high voltage terminal Vref coupled to one end of the reset transistor T11. This ensures that the voltage of the reference high voltage terminal Vref is reliably applied to the second terminal B of the write transistor T3 during the reset period of the pixel circuit, rather than being in a floating state. It should be noted that the signal timing waveform diagram of the pixel circuit of the fifth embodiment of the present disclosure is the same as that in FIG5 .
圖9係根據本揭露的第六實施例之畫素電路的示意圖。圖9所示的本揭露的第六實施例之畫素電路類似於圖6所示的本揭露的第三實施例之畫素電路,兩者的差異在於,如圖9所示,在本揭露的第六實施例中,畫素電路還包括重置電晶體T11,此外,重置電晶體T7的汲極端改為耦接至驅動電晶體T1的閘極端G,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T7導通,使得驅動電晶體T1的閘極端G會被重置電晶體T7的源極端所耦接的起始電壓端Vini的電壓所重置,重置電晶體T11具有用以接收掃描訊號S1的閘極端,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T11導通,使得寫入電晶體T3的第二端B會被重置電晶體T11的一端所耦接的參考高電壓端Vref的電壓所重置,這可以使得寫入電晶體T3的第二端B在畫素電路的重置期間能夠確實地被施加參考高電壓端Vref的電壓而非為浮接狀態。應注意的是,本揭露的第六實施例之畫素電路的訊號時序波形圖與圖3相同。FIG9 is a schematic diagram of a pixel circuit according to a sixth embodiment of the present disclosure. The pixel circuit of the sixth embodiment of the present disclosure shown in FIG9 is similar to the pixel circuit of the third embodiment of the present disclosure shown in FIG6 . The difference between the two is that, as shown in FIG9 , in the sixth embodiment of the present disclosure, the pixel circuit further includes a reset transistor T11. In addition, the drain terminal of the reset transistor T7 is coupled to the gate terminal G of the drive transistor T1. During the reset period of the pixel circuit, the scanning signal S1 is controlled to turn on the reset transistor T7, so that the gate terminal G of the drive transistor T1 is coupled to the source terminal of the reset transistor T7. The reset transistor T11 is reset by the voltage of the initial voltage terminal Vini. The reset transistor T11 has a gate terminal for receiving the scan signal S1. During the reset period of the pixel circuit, the scan signal S1 is controlled to turn on the reset transistor T11, so that the second terminal B of the write transistor T3 is reset by the voltage of the reference high voltage terminal Vref coupled to one end of the reset transistor T11. This ensures that the voltage of the reference high voltage terminal Vref is reliably applied to the second terminal B of the write transistor T3 during the reset period of the pixel circuit, rather than being in a floating state. It should be noted that the signal timing waveform diagram of the pixel circuit of the sixth embodiment of the present disclosure is the same as that in FIG3 .
圖10係根據本揭露的第七實施例與第八實施例之畫素電路的示意圖。圖10所示的畫素電路包括驅動電晶體T21、發光控制電晶體T22與T26、重置電晶體T23與T25、寫入電晶體T24、發光控制電晶體T26、電容C21、發光元件L21及電壓訊號反饋電路220。其中,發光元件L21為電流驅動元件,例如為微發光二極體。具體而言,圖10所示的畫素電路適用於微發光二極體顯示器,但本揭露不限於此。Figure 10 is a schematic diagram of a pixel circuit according to the seventh and eighth embodiments of the present disclosure. The pixel circuit shown in Figure 10 includes a drive transistor T21, emission control transistors T22 and T26, reset transistors T23 and T25, a write transistor T24, an emission control transistor T26, a capacitor C21, a light-emitting element L21, and a voltage signal feedback circuit 220. The light-emitting element L21 is a current-driven element, such as a micro-LED. Specifically, the pixel circuit shown in Figure 10 is suitable for use in a micro-LED display, but the present disclosure is not limited thereto.
其中,驅動電晶體T21、發光控制電晶體T22、T26與發光元件L21構成圖10所示的畫素電路的發光電路。驅動電晶體T21具有用以接收資料訊號Data及其臨接電壓Vth的和值的閘極端G,發光控制電晶體T22與T26分別具有用以接收發光控制訊號EM1與EM2的閘極端。發光控制電晶體T22與T26串聯耦接於驅動電晶體T21與發光元件L21之間,發光控制電晶體T22串聯耦接於系統高電壓端VDD與驅動電晶體T21之間,發光控制電晶體T26串聯耦接於驅動電晶體T21與發光元件L21之間。具體而言,發光元件L21與驅動電晶體T21、發光控制電晶體T22與T26串聯而耦接在系統高電壓端VDD與系統低電壓端VSS之間,以形成一電流路徑。The driver transistor T21, emission control transistors T22 and T26, and the light-emitting element L21 form the light-emitting circuit of the pixel circuit shown in Figure 10. The driver transistor T21 has a gate terminal G for receiving the sum of the data signal Data and its threshold voltage Vth. The emission control transistors T22 and T26 have gate terminals for receiving emission control signals EM1 and EM2, respectively. The emission control transistors T22 and T26 are coupled in series between the driver transistor T21 and the light-emitting element L21. The emission control transistor T22 is coupled in series between the system high voltage terminal VDD and the driver transistor T21, while the emission control transistor T26 is coupled in series between the driver transistor T21 and the light-emitting element L21. Specifically, the light-emitting element L21, the driving transistor T21, and the light-emitting control transistors T22 and T26 are connected in series and coupled between the system high voltage terminal VDD and the system low voltage terminal VSS to form a current path.
其中,重置電晶體T23與T25、寫入電晶體T24與電容C21構成圖10所示的畫素電路的控制與補償電路。重置電晶體T23與T25具有用以接收掃描訊號S1的閘極端,寫入電晶體T24具有用以接收掃描訊號S2的閘極端。Reset transistors T23 and T25, write transistor T24, and capacitor C21 form the control and compensation circuit of the pixel circuit shown in Figure 10. Reset transistors T23 and T25 have gate terminals for receiving scan signal S1, and write transistor T24 has a gate terminal for receiving scan signal S2.
其中,寫入電晶體T24的一端用以接收資料訊號Data,寫入電晶體T24的另一端耦接驅動電晶體T21的第一端,電容C21與電壓訊號反饋電路220串聯而耦接於發光元件L21的陰極端與驅動電晶體T21的閘極端G之間,重置電晶體T23耦接於驅動電晶體T21的第二端與閘極端G之間,重置電晶體T23的第一端耦接於發光控制電晶體T22與驅動電晶體T21之間,重置電晶體T23的第二端耦接至驅動電晶體T21的閘極端G,重置電晶體T25耦接於起始電壓端Vini與發光元件L21的陽極端ANO之間。Among them, one end of the write transistor T24 is used to receive the data signal Data, and the other end of the write transistor T24 is coupled to the first end of the drive transistor T21. The capacitor C21 and the voltage signal feedback circuit 220 are connected in series and coupled between the cathode end of the light-emitting element L21 and the gate end G of the drive transistor T21. The reset transistor T23 is coupled to the drive transistor The first end of the reset transistor T23 is coupled between the light-emitting control transistor T22 and the drive transistor T21. The second end of the reset transistor T23 is coupled to the gate terminal G of the drive transistor T21. The reset transistor T25 is coupled between the starting voltage terminal Vini and the anode terminal ANO of the light-emitting element L21.
於圖10所示的畫素電路的重置期間,控制掃描訊號S1與發光控制訊號EM1以分別使重置電晶體T23與發光控制電晶體T22導通,使得驅動電晶體T21的閘極端G的電壓被重置為系統高電壓端VDD的電壓。於圖10所示的畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T25導通,使得發光元件L21的陽極端ANO的電壓被重置為起始電壓端Vini的電壓。During the reset period of the pixel circuit shown in Figure 10 , the scanning signal S1 and the emission control signal EM1 are controlled to respectively turn on the reset transistor T23 and the emission control transistor T22, thereby resetting the voltage at the gate terminal G of the drive transistor T21 to the voltage of the system high voltage terminal VDD. During the reset period of the pixel circuit shown in Figure 10 , the scanning signal S1 is controlled to turn on the reset transistor T25, thereby resetting the voltage at the anode terminal ANO of the light-emitting element L21 to the voltage of the starting voltage terminal Vini.
於圖10所示的畫素電路的補償期間,控制掃描訊號S1以使重置電晶體T23與T25關斷,另一方面,控制掃描訊號S2以使寫入電晶體T24導通,使得驅動電晶體T21的第一端接收資料訊號Data,並且使得電容C21耦接驅動電晶體T21的閘極端G的一端的電壓成為資料訊號Data與驅動電晶體T21的臨界電壓Vth的和值(即Data+Vth)。藉此,電容C21會儲存驅動電晶體T21的臨界電壓,換句話說,在圖10所示的畫素電路的補償期間,可以針對驅動電晶體T21的臨界電壓來進行補償。During the compensation period of the pixel circuit shown in FIG10 , the scan signal S1 is controlled to turn off the reset transistors T23 and T25. Meanwhile, the scan signal S2 is controlled to turn on the write transistor T24, causing the first terminal of the drive transistor T21 to receive the data signal Data. Furthermore, the voltage at one terminal of the capacitor C21, which is coupled to the gate terminal G of the drive transistor T21, becomes the sum of the data signal Data and the critical voltage Vth of the drive transistor T21 (i.e., Data + Vth). Thus, capacitor C21 stores the critical voltage of the driving transistor T21. In other words, during the compensation period of the pixel circuit shown in FIG10 , compensation can be performed for the critical voltage of the driving transistor T21.
於圖10所示的畫素電路的發光期間,控制發光控制訊號EM1與EM2以分別使發光控制電晶體T22與T26導通,圖10所示的畫素電路的發光電路可以產生導通電流流經發光元件L21使其發光。換言之,發光元件L21耦接驅動電晶體T21以根據驅動電晶體T21所提供的驅動電流而發光。During the luminescence period of the pixel circuit shown in FIG10 , luminescence control signals EM1 and EM2 are controlled to turn on luminescence control transistors T22 and T26, respectively. The luminescence circuit of the pixel circuit shown in FIG10 generates a conduction current flowing through the luminescence element L21, causing it to emit light. In other words, the luminescence element L21 is coupled to the drive transistor T21 and emits light based on the drive current provided by the drive transistor T21.
如圖10所示,畫素電路的電壓訊號反饋電路220與電容C21串聯而耦接於驅動電晶體T21的閘極端G與發光元件L21的陰極端之間。電壓訊號反饋電路220用以將發光元件L21的陰極端的電壓反饋至驅動電晶體T21的閘極端G,以使得驅動電晶體T21的閘極端G與源極端之間的跨壓包含發光元件L21的順向電壓(Vf),如此一來,包含電壓訊號反饋電路220的畫素電路能夠對於上述之驅動電流進行電流補償。As shown in Figure 10 , the pixel circuit's voltage signal feedback circuit 220 is connected in series with capacitor C21 and coupled between the gate terminal G of the drive transistor T21 and the cathode terminal of the light-emitting element L21. The voltage signal feedback circuit 220 is used to feed back the voltage at the cathode terminal of the light-emitting element L21 to the gate terminal G of the drive transistor T21, so that the voltage across the gate terminal G and the source terminal of the drive transistor T21 includes the forward voltage (Vf) of the light-emitting element L21. In this way, the pixel circuit including the voltage signal feedback circuit 220 can compensate for the aforementioned drive current.
具體而言,當發光元件L21因特定原因(例如高溫或老化)而導致其順向電壓(Vf)發生改變時,驅動電晶體T21可以即時改變其驅動電流,以實現對於驅動電流的電流補償。舉例而言,當發光元件L21為微發光二極體且因長時間點亮而導致其因熱效應而溫度升高時,發光元件L21的順向電壓(Vf)會隨著溫度升高而下降,導致發光元件L21的陽極端ANO的電壓(即VSS+Vf)變小,與此同時,驅動電晶體T21會因為發光元件L21的陽極端ANO的電壓下降而輸出更大的驅動電流,因此發光元件L21的亮度也會隨之上升,進而達到電流補償的效果。總的來說,包含電壓訊號反饋電路220的畫素電路可以即時偵測微發光二極體(即發光元件L21)因升溫造成的電性變化並使得驅動電晶體T21增加驅動電流,以使微發光二極體(即發光元件L21)的亮度隨之增加,則可以減小因亮度差異造成的mura(亮度不均)或色偏。Specifically, when the forward voltage (Vf) of the light-emitting element L21 changes due to certain reasons (such as high temperature or aging), the driving transistor T21 can instantly change its driving current to achieve current compensation for the driving current. For example, when the light-emitting element L21 is a micro-luminescent diode and its temperature rises due to thermal effects due to being lit for a long time, the forward voltage (Vf) of the light-emitting element L21 will decrease as the temperature rises, causing the voltage at the anode terminal ANO of the light-emitting element L21 (i.e., VSS+Vf) to decrease. At the same time, the driving transistor T21 will output a larger driving current due to the decrease in the voltage at the anode terminal ANO of the light-emitting element L21. Therefore, the brightness of the light-emitting element L21 will also increase, thereby achieving the effect of current compensation. In general, the pixel circuit including the voltage signal feedback circuit 220 can instantly detect the electrical changes of the micro-luminescent diode (i.e., the light-emitting element L21) caused by temperature increase and cause the drive transistor T21 to increase the drive current, thereby increasing the brightness of the micro-luminescent diode (i.e., the light-emitting element L21). This can reduce mura (uneven brightness) or color shift caused by brightness differences.
圖11係根據本揭露的第七實施例之畫素電路的示意圖。圖11所示的畫素電路的電壓訊號反饋電路220包括電晶體T27與T28,其中電晶體T27與電容C21串聯而耦接於驅動電晶體T21的閘極端G與發光元件L21的陰極端之間,其中電晶體T28的第一端耦接於電晶體T27與電容C21之間,其中電晶體T28的第二端耦接至起始電壓端Vini。Figure 11 is a schematic diagram of a pixel circuit according to a seventh embodiment of the present disclosure. The voltage signal feedback circuit 220 of the pixel circuit shown in Figure 11 includes transistors T27 and T28. Transistor T27 and capacitor C21 are connected in series and coupled between the gate terminal G of the drive transistor T21 and the cathode terminal of the light-emitting element L21. A first terminal of transistor T28 is coupled between transistor T27 and capacitor C21, and a second terminal of transistor T28 is coupled to the starting voltage terminal Vini.
如圖11所示,在本揭露的第七實施例中,驅動電晶體T21、發光控制電晶體T22與T26、重置電晶體T23與T25、寫入電晶體T24、電晶體T27與T28皆為N型MOSFET。As shown in FIG11 , in the seventh embodiment of the present disclosure, the drive transistor T21, the light-emitting control transistors T22 and T26, the reset transistors T23 and T25, the write transistor T24, and the transistors T27 and T28 are all N-type MOSFETs.
圖12係根據本揭露的第七實施例之畫素電路的訊號時序波形圖。如圖11與圖12所示,在本揭露的第七實施例中,電晶體T27受控於發光控制訊號EM2,發光控制訊號EM2用以於畫素電路的發光期間導通電晶體T27。如圖11與圖12所示,在本揭露的第七實施例中,電晶體T28受控於掃描訊號S1,掃描訊號S1用以於畫素電路的重置期間導通電晶體T28。Figure 12 shows signal timing waveforms for a pixel circuit according to the seventh embodiment of the present disclosure. As shown in Figures 11 and 12, in the seventh embodiment of the present disclosure, transistor T27 is controlled by the emission control signal EM2, which turns on transistor T27 during the pixel circuit's emission period. As shown in Figures 11 and 12, in the seventh embodiment of the present disclosure, transistor T28 is controlled by the scan signal S1, which turns on transistor T28 during the pixel circuit's reset period.
如圖11與圖12所示,在本揭露的第七實施例中,掃描訊號S1用以於畫素電路的重置期間導通電晶體T28,使得電容C21的第二端B具有起始電壓端Vini的電壓;掃描訊號S1用以於畫素電路的重置期間導通重置電晶體T25,使得發光元件L21的陽極端ANO具有起始電壓端Vini的電壓;發光控制訊號EM1與掃描訊號S1分別用以於畫素電路的重置期間導通發光控制電晶體T22與重置電晶體T23,使得驅動電晶體T21的閘極端G具有系統高電壓端VDD的電壓。As shown in Figures 11 and 12 , in the seventh embodiment of the present disclosure, the scanning signal S1 is used to turn on the transistor T28 during the reset period of the pixel circuit, causing the second terminal B of the capacitor C21 to have the voltage of the starting voltage terminal Vini. The scanning signal S1 is used to turn on the reset transistor T25 during the reset period of the pixel circuit, causing the anode terminal ANO of the light-emitting element L21 to have the voltage of the starting voltage terminal Vini. The emission control signal EM1 and the scanning signal S1 are used to turn on the emission control transistor T22 and the reset transistor T23, respectively, during the reset period of the pixel circuit, causing the gate terminal G of the drive transistor T21 to have the voltage of the system high voltage terminal VDD.
如圖11與圖12所示,在本揭露的第七實施例中,掃描訊號S2用以於畫素電路的補償期間導通寫入電晶體T24,使得驅動電晶體T21的閘極端G的電壓成為Data+Vth。As shown in FIG. 11 and FIG. 12 , in the seventh embodiment of the present disclosure, the scan signal S2 is used to turn on the write transistor T24 during the compensation period of the pixel circuit, so that the voltage of the gate terminal G of the drive transistor T21 becomes Data+Vth.
接著,如圖11與圖12所示,在本揭露的第七實施例中,發光控制訊號EM1與EM2分別用以於畫素電路的發光期間導通發光控制電晶體T22與T26,使得發光元件L21的陽極端ANO的電壓成為VSS+Vf,並且由於此時發光控制電晶體T26導通,因此發光元件L21的陽極端ANO的電壓會被反饋至驅動電晶體T21的源極端。此外,發光控制訊號EM2用以於畫素電路的發光期間導通電晶體T27,使得電容C21的第二端B具有系統低電壓端VSS的電壓。Next, as shown in Figures 11 and 12 , in the seventh embodiment of the present disclosure, emission control signals EM1 and EM2 are used to turn on emission control transistors T22 and T26, respectively, during the pixel circuit's emission period. This causes the voltage at anode terminal ANO of light-emitting element L21 to reach VSS + Vf. Since emission control transistor T26 is turned on during this period, the voltage at anode terminal ANO of light-emitting element L21 is fed back to the source terminal of driver transistor T21. Furthermore, emission control signal EM2 is used to turn on transistor T27 during the pixel circuit's emission period, causing the second terminal B of capacitor C21 to have a voltage equal to the system low-voltage terminal VSS.
根據上述兩段的內容,在本揭露的第七實施例中,於畫素電路的發光期間,驅動電晶體T21的閘極端G的電壓準位會因為電容耦合效應而有對應的改變,其中上述的電容耦合效應包含:電容C21將電容C21的第二端B的電壓變化(由起始電壓端Vini的電壓變為系統低電壓端VSS的電壓)耦合至驅動電晶體T21的閘極端G,意即,電壓訊號反饋電路220用以於畫素電路的發光期間將發光元件L21的陰極端的電壓(系統低電壓端VSS的電壓)透過電容C21的電容耦合效應而反饋至驅動電晶體T21的閘極端G。據此,於畫素電路的發光期間,驅動電晶體T21的閘極端G的電壓準位會變為如同以下式(6)所示: (6) According to the contents of the above two paragraphs, in the seventh embodiment of the present disclosure, during the luminescence period of the pixel circuit, the voltage level of the gate terminal G of the driving transistor T21 will change accordingly due to the capacitive coupling effect, wherein the above-mentioned capacitive coupling effect includes: the capacitor C21 changes the voltage of the second terminal B of the capacitor C21 (from the voltage of the starting voltage terminal Vini to The voltage signal feedback circuit 220 is coupled to the gate terminal G of the driving transistor T21 (the voltage of the system low voltage terminal VSS). That is, the voltage signal feedback circuit 220 is used to feed back the voltage of the cathode terminal of the light-emitting element L21 (the voltage of the system low voltage terminal VSS) to the gate terminal G of the driving transistor T21 through the capacitive coupling effect of the capacitor C21 during the luminescence period of the pixel circuit. Accordingly, during the luminescence period of the pixel circuit, the voltage level of the gate terminal G of the driving transistor T21 becomes as shown in the following formula (6): (6)
在取得驅動電晶體T21的閘極端G的電壓準位之後,可接著將其帶入驅動電晶體T21的驅動電流公式I ds=k(V GS-Vth) 2。如此一來,在本揭露的第七實施例中,於畫素電路的發光期間,驅動電晶體T21的驅動電流可以表示為如同以下式(7)所示: (7) After obtaining the voltage level of the gate terminal G of the drive transistor T21, it can be substituted into the drive current formula of the drive transistor T21: I ds = k(V GS - Vth) 2 . Thus, in the seventh embodiment of the present disclosure, during the luminescence period of the pixel circuit, the drive current of the drive transistor T21 can be expressed as shown in the following formula (7): (7)
一方面,由於式(7)包含發光元件L21的順向電壓Vf,因此可知,用以使得發光元件L21發光之驅動電晶體T21所提供的驅動電流可以針對發光元件L21的順向電壓Vf進行電流補償,意即,可以對於驅動電流進行電流補償。另一方面,由於式(7)不包含系統低電壓端VSS的電壓,因此可知,系統低電壓端VSS的電壓已經被補償。On the one hand, because equation (7) includes the forward voltage Vf of light-emitting element L21, it can be seen that the driving current provided by driver transistor T21, which is used to make light-emitting element L21 emit light, can compensate for the forward voltage Vf of light-emitting element L21. In other words, current compensation can be performed on the driving current. On the other hand, because equation (7) does not include the voltage of the system low-voltage terminal VSS, it can be seen that the voltage of the system low-voltage terminal VSS has already been compensated.
值得一提的是,在本揭露的第七實施例中,重置電晶體T23可以使用銦鎵鋅氧化物(IGZO)電晶體,從而使得本揭露的第七實施例之畫素電路適用於低頻操作,但本揭露不限於此。It is worth mentioning that in the seventh embodiment of the present disclosure, the reset transistor T23 may use an indium gallium zinc oxide (IGZO) transistor, thereby making the pixel circuit of the seventh embodiment of the present disclosure suitable for low-frequency operation, but the present disclosure is not limited thereto.
圖13係根據本揭露的第八實施例之畫素電路的示意圖。圖13所示的本揭露的第八實施例之畫素電路類似於圖11所示的本揭露的第七實施例之畫素電路,兩者的差異在於,如圖13所示,在本揭露的第八實施例中,電晶體T27、發光控制電晶體T22與T26皆受控於發光控制訊號EM,這可以使得本揭露的第八實施例之畫素電路的閘極控制訊號僅有三組(即掃描訊號S1、S2與發光控制訊號EM),另外,重置電晶體T23的閘極端是受控於掃描訊號S2而非掃描訊號S1,並且,本揭露的第八實施例之畫素電路還包括重置電晶體T29。重置電晶體T29耦接於系統高電壓端VDD與驅動電晶體T21的閘極端G之間,重置電晶體T29具有用以接收掃描訊號S1的閘極端,於畫素電路的重置期間,控制掃描訊號S1以使重置電晶體T29導通,使得驅動電晶體T21的閘極端G會被重置電晶體T29的一端所耦接的系統高電壓端VDD的電壓所重置。Figure 13 is a schematic diagram of a pixel circuit according to an eighth embodiment of the present disclosure. The pixel circuit of the eighth embodiment shown in Figure 13 is similar to the pixel circuit of the seventh embodiment of the present disclosure shown in Figure 11 . The difference between the two is that, as shown in Figure 13 , in the eighth embodiment of the present disclosure, transistor T27 and emission control transistors T22 and T26 are all controlled by the emission control signal EM. This allows the pixel circuit of the eighth embodiment of the present disclosure to have only three sets of gate control signals (i.e., scanning signals S1, S2, and emission control signal EM). In addition, the gate of the reset transistor T23 is controlled by the scanning signal S2 rather than the scanning signal S1. Furthermore, the pixel circuit of the eighth embodiment of the present disclosure also includes a reset transistor T29. Reset transistor T29 is coupled between the system high voltage terminal VDD and the gate terminal G of the drive transistor T21. Reset transistor T29 has a gate terminal for receiving the scan signal S1. During the reset period of the pixel circuit, the scan signal S1 is controlled to turn on reset transistor T29, so that the gate terminal G of the drive transistor T21 is reset by the voltage of the system high voltage terminal VDD, to which one terminal of reset transistor T29 is coupled.
圖14係根據本揭露的第八實施例之畫素電路的訊號時序波形圖。如圖13與圖14所示,在本揭露的第八實施例中,電晶體T27、發光控制電晶體T22與T26皆受控於發光控制訊號EM,發光控制訊號EM用以於畫素電路的發光期間導通電晶體T27、發光控制電晶體T22與T26。Figure 14 shows signal timing waveforms for a pixel circuit according to the eighth embodiment of the present disclosure. As shown in Figures 13 and 14 , in the eighth embodiment of the present disclosure, transistor T27 and emission control transistors T22 and T26 are all controlled by an emission control signal EM. This emission control signal EM turns on transistors T27, T22, and T26 during the pixel circuit's emission period.
值得一提的是,在本揭露的第八實施例中,重置電晶體T23與T29可以使用銦鎵鋅氧化物(IGZO)電晶體,從而使得本揭露的第八實施例之畫素電路適用於低頻操作,但本揭露不限於此。It is worth mentioning that in the eighth embodiment of the present disclosure, the reset transistors T23 and T29 may use indium gallium zinc oxide (IGZO) transistors, thereby making the pixel circuit of the eighth embodiment of the present disclosure suitable for low-frequency operation, but the present disclosure is not limited thereto.
綜上,本揭露所提出的畫素電路透過電壓訊號反饋電路來將發光元件的其中一端的電壓反饋至驅動電晶體的閘極端,以對於驅動電流進行電流補償,可以減小微發光二極體因熱效應導致的亮度差異所造成的mura(亮度不均)或色偏。In summary, the pixel circuit proposed in this disclosure uses a voltage signal feedback circuit to feed back the voltage at one end of the light-emitting element to the gate terminal of the drive transistor to compensate for the drive current. This can reduce mura (uneven brightness) or color shift caused by brightness differences in the micro-LED due to thermal effects.
以上概述了數個實施例的特徵,因此熟習此技藝者可以更了解本揭露的態樣。熟習此技藝者應了解到,其可輕易地把本揭露當作基礎來設計或修改其他的製程與結構,藉此實現和在此所介紹的這些實施例相同的目標及/或達到相同的優點。熟習此技藝者也應可明白,這些等效的建構並未脫離本揭露的精神與範圍,並且他們可以在不脫離本揭露精神與範圍的前提下做各種的改變、替換與變動。The above summarizes the features of several embodiments so that those skilled in the art can better understand the scope of the present disclosure. Those skilled in the art should understand that they can easily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same goals and/or achieve the same advantages as the embodiments described herein. Those skilled in the art should also understand that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and modifications without departing from the spirit and scope of the present disclosure.
120,220:電壓訊號反饋電路 A,ANO:陽極端 B:第二端 C:第一端 C1,C2,C21:電容 Data:資料訊號 EM,EM1,EM2:發光控制訊號 G:閘極端 L1,L21:發光元件 S1,S2,S3,S4:掃描訊號 T1,T21:驅動電晶體 T2:初始化電晶體 T3,T24:寫入電晶體 T4,T5:補償電晶體 T6,T22,T26l:發光控制電晶體 T7,T11,T23,T25,T29:重置電晶體 T8,T9,T10,T27,T28:電晶體 T ON:時間段 VDD:系統高電壓端 Vini:起始電壓端 Vp:參考電壓端 Vref:參考高電壓端 VSS:系統低電壓端 120, 220: Voltage signal feedback circuit A, ANO: Anode B: Second terminal C: First terminal C1, C2, C21: Capacitor Data: Data signal EM, EM1, EM2: Lighting control signal G: Gate terminal L1, L21: Light-emitting element S1, S2, S3, S4: Scan signal T1, T21: Drive transistor T2: Initialization transistor T3, T24: Write transistor T4, T5: Compensation transistor T6, T22, T261: Lighting control transistor T7, T11, T23, T25, T29: Reset transistor T8, T9, T10, T27, T28: Transistor T ON : Time period VDD: system high voltage terminal Vini: starting voltage terminal Vp: reference voltage terminal Vref: reference high voltage terminal VSS: system low voltage terminal
從以下結合所附圖式所做的詳細描述,可對本揭露之態樣有更佳的了解。需注意的是,根據業界的標準實務,各特徵並未依比例繪示。事實上,為了使討論更為清楚,各特徵的尺寸都可任意地增加或減少。 [圖1]係根據本揭露的第一實施例至第六實施例之畫素電路的示意圖。 [圖2]係根據本揭露的第一實施例之畫素電路的示意圖。 [圖3]係根據本揭露的第一實施例之畫素電路的訊號時序波形圖。 [圖4]係根據本揭露的第二實施例之畫素電路的示意圖。 [圖5]係根據本揭露的第二實施例之畫素電路的訊號時序波形圖。 [圖6]係根據本揭露的第三實施例之畫素電路的示意圖。 [圖7]係根據本揭露的第四實施例之畫素電路的示意圖。 [圖8]係根據本揭露的第五實施例之畫素電路的示意圖。 [圖9]係根據本揭露的第六實施例之畫素電路的示意圖。 [圖10]係根據本揭露的第七實施例與第八實施例之畫素電路的示意圖。 [圖11]係根據本揭露的第七實施例之畫素電路的示意圖。 [圖12]係根據本揭露的第七實施例之畫素電路的訊號時序波形圖。 [圖13]係根據本揭露的第八實施例之畫素電路的示意圖。 [圖14]係根據本揭露的第八實施例之畫素電路的訊號時序波形圖。 A better understanding of the present disclosure can be gained from the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. [Figure 1] is a schematic diagram of pixel circuits according to the first through sixth embodiments of the present disclosure. [Figure 2] is a schematic diagram of a pixel circuit according to the first embodiment of the present disclosure. [Figure 3] is a signal timing waveform diagram of the pixel circuit according to the first embodiment of the present disclosure. [Figure 4] is a schematic diagram of a pixel circuit according to the second embodiment of the present disclosure. [Figure 5] is a signal timing waveform diagram of the pixel circuit according to the second embodiment of the present disclosure. [Figure 6] is a schematic diagram of a pixel circuit according to the third embodiment of the present disclosure. [Figure 7] is a schematic diagram of a pixel circuit according to the fourth embodiment of the present disclosure. [Figure 8] is a schematic diagram of a pixel circuit according to the fifth embodiment of the present disclosure. [Figure 9] is a schematic diagram of a pixel circuit according to the sixth embodiment of the present disclosure. [Figure 10] is a schematic diagram of pixel circuits according to the seventh and eighth embodiments of the present disclosure. [Figure 11] is a schematic diagram of a pixel circuit according to the seventh embodiment of the present disclosure. [Figure 12] is a signal timing waveform diagram of the pixel circuit according to the seventh embodiment of the present disclosure. [Figure 13] is a schematic diagram of the pixel circuit according to the eighth embodiment of the present disclosure. [Figure 14] is a signal timing waveform diagram of the pixel circuit according to the eighth embodiment of the present disclosure.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic Storage Information (Please enter in order by institution, date, and number) None International Storage Information (Please enter in order by country, institution, date, and number) None
120:電壓訊號反饋電路 120: Voltage signal feedback circuit
A:陽極端 A: Anode
B:第二端 B: Second end
C1:電容 C1: Capacitor
Data:資料訊號 Data: Data signal
EM:發光控制訊號 EM: Luminescence control signal
G:閘極端 G: Gate terminal
L1:發光元件 L1: Light-emitting element
S1,S2:掃描訊號 S1, S2: Scanning signal
T1:驅動電晶體 T1: driving transistor
T2:初始化電晶體 T2: Initialize transistors
T3:寫入電晶體 T3: Write transistor
T4,T5:補償電晶體 T4, T5: Compensation transistors
T6:發光控制電晶體 T6: Luminescence control transistor
T7:重置電晶體 T7: Reset transistor
VDD:系統高電壓端 VDD: System high voltage terminal
Vini:起始電壓端 Vini: Starting voltage terminal
Vp:參考電壓端 Vp: Reference voltage terminal
VSS:系統低電壓端 VSS: System low voltage terminal
Claims (12)
Priority Applications (1)
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| TW113123468A TWI900078B (en) | 2024-06-24 | 2024-06-24 | Pixel circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| TW113123468A TWI900078B (en) | 2024-06-24 | 2024-06-24 | Pixel circuit |
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| Publication Number | Publication Date |
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| TWI900078B true TWI900078B (en) | 2025-10-01 |
| TW202601605A TW202601605A (en) | 2026-01-01 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266757A (en) * | 2007-03-14 | 2008-09-17 | 三星Sdi株式会社 | Pixel, organic light emitting display using same, and driving method thereof |
| CN103390386A (en) * | 2012-05-11 | 2013-11-13 | 伊格尼斯创新公司 | Pixel circuits including feedback capacitor and reset capacitor, and display system therefore |
| US20160267846A1 (en) * | 2005-01-28 | 2016-09-15 | Ignis Innovation Inc. | Voltage programmed pixel circuit, display system and driving method thereof |
| US20220114961A1 (en) * | 2020-10-13 | 2022-04-14 | Joled Inc. | Pixel circuit driving method, pixel circuit, and display device |
| CN114694591A (en) * | 2020-12-30 | 2022-07-01 | 乐金显示有限公司 | Display device, control method thereof, and feedback device |
| US20230318458A1 (en) * | 2022-03-29 | 2023-10-05 | Samsung Display Co ., Ltd. | Power provider and display device including the same |
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2024
- 2024-06-24 TW TW113123468A patent/TWI900078B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160267846A1 (en) * | 2005-01-28 | 2016-09-15 | Ignis Innovation Inc. | Voltage programmed pixel circuit, display system and driving method thereof |
| CN101266757A (en) * | 2007-03-14 | 2008-09-17 | 三星Sdi株式会社 | Pixel, organic light emitting display using same, and driving method thereof |
| CN103390386A (en) * | 2012-05-11 | 2013-11-13 | 伊格尼斯创新公司 | Pixel circuits including feedback capacitor and reset capacitor, and display system therefore |
| US20220114961A1 (en) * | 2020-10-13 | 2022-04-14 | Joled Inc. | Pixel circuit driving method, pixel circuit, and display device |
| CN114694591A (en) * | 2020-12-30 | 2022-07-01 | 乐金显示有限公司 | Display device, control method thereof, and feedback device |
| US20230318458A1 (en) * | 2022-03-29 | 2023-10-05 | Samsung Display Co ., Ltd. | Power provider and display device including the same |
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