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TWI830560B - Transparent copper foil substrate and manufacturing method thereof - Google Patents

Transparent copper foil substrate and manufacturing method thereof Download PDF

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Publication number
TWI830560B
TWI830560B TW111150415A TW111150415A TWI830560B TW I830560 B TWI830560 B TW I830560B TW 111150415 A TW111150415 A TW 111150415A TW 111150415 A TW111150415 A TW 111150415A TW I830560 B TWI830560 B TW I830560B
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transparent
layer
substrate
copper foil
blackened layer
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TW111150415A
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Chinese (zh)
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TW202426257A (en
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陳宗儀
黃薪恩
陳文欽
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柏彌蘭金屬化研究股份有限公司
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Abstract

本發明提供一種透明銅箔基板,其係包含:透明基板,其包括第一表面及第二表面;黑化層,其係藉由化學鍍而形成於透明基板的第一表面,黑化層包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21;及銅層,其係形成於黑化層之遠離透明基板的一面,並與黑化層複合為金屬導電層。又,本發明還提供一種透明銅箔基板的製造方法,包含:步驟(A),提供透明基板;步驟(B),藉由化學鍍將黑化層形成於透明基板的一面,且黑化層係包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21;及步驟(C),藉由電鍍將銅層形成於黑化層之遠離透明基板的一面,並與黑化層複合為金屬導電層。其中,黑化層之片電阻小於30Ω/m2,透明銅箔基板之由透明基板的第二表面穿射入第一表面方向所測得之入射光的反射率小於25%,且透明基材與金屬導電層的剝離強度大於0.5kgf/cm。藉由前述透明銅箔基板及其製造方法,能夠在降低反射率的同時,解決黑化層針孔過多的問題和形成配線時的側蝕問題,並能夠獲得具有低反射率且剝離強度足夠之透明銅箔基板。 The invention provides a transparent copper foil substrate, which includes: a transparent substrate including a first surface and a second surface; a blackened layer formed on the first surface of the transparent substrate by electroless plating, and the blackened layer includes Nickel and zinc, with a zinc/nickel weight ratio of 0.1 to 0.21; and a copper layer, which is formed on the side of the blackened layer away from the transparent substrate, and is combined with the blackened layer to form a metal conductive layer. In addition, the present invention also provides a method for manufacturing a transparent copper foil substrate, which includes: step (A), providing a transparent substrate; step (B), forming a blackened layer on one side of the transparent substrate by electroless plating, and the blackened layer The system includes nickel and zinc, and the weight ratio of zinc/nickel is 0.1~0.21; and step (C), forming a copper layer on the side of the blackened layer away from the transparent substrate by electroplating, and compounding it with the blackened layer to form a metal conductive layer. Among them, the sheet resistance of the blackened layer is less than 30Ω/m 2 , the reflectivity of the incident light measured from the second surface of the transparent substrate to the first surface of the transparent copper foil substrate is less than 25%, and the transparent substrate The peeling strength from the metal conductive layer is greater than 0.5kgf/cm. Through the aforementioned transparent copper foil substrate and its manufacturing method, it is possible to reduce the reflectivity while solving the problem of excessive pinholes in the blackened layer and the undercutting problem when forming wiring, and to obtain a substrate with low reflectivity and sufficient peel strength. Transparent copper foil substrate.

Description

透明銅箔基板及其製造方法 Transparent copper foil substrate and manufacturing method thereof

本發明係關於一種透明銅箔基板及其製造方法,特別是關於一種具有低反射率且剝離強度足夠之透明銅箔基板及其製造方法。 The present invention relates to a transparent copper foil substrate and a manufacturing method thereof, in particular to a transparent copper foil substrate with low reflectivity and sufficient peel strength and a manufacturing method thereof.

在顯示器的製造領域中,一般會在透明基材上形成銅的金屬配線,以作為透明銅箔基板來使用。但是,因為銅具有金屬光澤,故存在著因為光線反射而導致顯示器的視認性降低之問題。 In the field of display manufacturing, copper metal wiring is generally formed on a transparent substrate to be used as a transparent copper foil substrate. However, since copper has metallic luster, there is a problem that the visibility of the display is reduced due to light reflection.

針對上述問題,有人提出在銅的金屬配線與透明基材之間,藉由真空濺鍍形成黑化層,以降低透明導電性基板的反射率。 In response to the above problems, it has been proposed to form a blackened layer between the copper metal wiring and the transparent substrate by vacuum sputtering to reduce the reflectivity of the transparent conductive substrate.

然而,習知技術係利用真空濺鍍將黑化層形成於透明基材上,此係容易造成所形成之黑化層有大量針孔,進而造成後續形成之透明銅箔基板中透明基材與金屬導電層的剝離強度不佳的問題。又,習知技術的黑化層之組成係為金屬氧化物,此係導致在形成金屬(例如銅)配線的線路圖案時會產生側蝕問題。 However, the conventional technology uses vacuum sputtering to form a blackened layer on a transparent substrate, which easily results in a large number of pinholes in the formed blackened layer, which in turn causes the transparent substrate and the transparent copper foil substrate to be subsequently formed. The problem of poor peel strength of the metal conductive layer. In addition, the composition of the blackened layer in the conventional technology is metal oxide, which leads to the problem of undercutting when forming circuit patterns of metal (for example, copper) wiring.

因此,針對具有針孔少的黑化層、剝離強度足夠且低反射率之透明銅箔基板,有進一步改善的空間。 Therefore, there is room for further improvement for a transparent copper foil substrate with a blackened layer with few pinholes, sufficient peel strength, and low reflectivity.

本發明人們發現,藉由利用化學鍍方法和特定之黑化層的組成,能夠在降低透明銅箔基板的反射率的同時,解決黑化層針孔過多的問題和 形成配線時的側蝕問題,並能夠獲得具有低反射率且剝離強度足夠之透明銅箔基板。 The inventors of the present invention have discovered that by utilizing an electroless plating method and a specific composition of the blackened layer, the reflectivity of the transparent copper foil substrate can be reduced while simultaneously solving the problem of excessive pinholes in the blackened layer and the The problem of undercutting when forming wiring is eliminated, and a transparent copper foil substrate with low reflectivity and sufficient peel strength can be obtained.

為了解決上述問題,本發明一態樣的透明銅箔基板,其係包含:透明基材,其包括第一表面及第二表面;黑化層,其係藉由化學鍍而形成於該透明基材的第一表面,該黑化層包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21,且黑化層之片電阻小於30Ω/m2;銅層,其係形成於該黑化層之遠離透明基材的一面,並與該黑化層複合為金屬導電層;其中,該透明銅箔基板之由該透明基材的第二表面穿射入第一表面方向所測得之入射光的反射率小於25%,且該透明基材與該金屬導電層的剝離強度大於0.5kgf/cm。 In order to solve the above problems, a transparent copper foil substrate according to one aspect of the present invention includes: a transparent base material including a first surface and a second surface; and a blackened layer formed on the transparent base by electroless plating. The first surface of the material, the blackened layer includes nickel and zinc, and the weight ratio of zinc/nickel is 0.1~0.21, and the sheet resistance of the blackened layer is less than 30Ω/ m2 ; the copper layer is formed on the blackened layer The side of the layer away from the transparent substrate is composited with the blackened layer to form a metal conductive layer; wherein, the incident angle of the transparent copper foil substrate measured from the direction of the second surface of the transparent substrate penetrating into the first surface The light reflectance is less than 25%, and the peeling strength between the transparent substrate and the metal conductive layer is greater than 0.5kgf/cm.

為了解決上述問題,本發明一態樣的透明銅箔基板的製造方法,其係包含:步驟(A),提供透明基材,其包括第一表面及第二表面;步驟(B),藉由化學鍍將黑化層形成於該透明基材的第一表面,且該黑化層係包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21,且該黑化層之片電阻小於30Ω/m2;及步驟(C),藉由電鍍將銅層形成於該黑化層之遠離透明基材的一面,並該銅層與該黑化層複合為金屬導電層;其中,該透明銅箔基板之由該透明基材的第二表面穿射入第一表面方向所測得之入射光的反射率小於25%,且該透明基材與該金屬導電層的剝離強度大於0.5kgf/cm。 In order to solve the above problems, a method for manufacturing a transparent copper foil substrate according to one aspect of the present invention includes: step (A), providing a transparent substrate including a first surface and a second surface; step (B), by Electroless plating forms a blackened layer on the first surface of the transparent substrate, and the blackened layer includes nickel and zinc, and the weight ratio of zinc/nickel is 0.1~0.21, and the sheet resistance of the blackened layer is less than 30Ω. /m 2 ; and step (C), forming a copper layer on the side of the blackened layer away from the transparent substrate by electroplating, and the copper layer and the blackened layer are combined into a metal conductive layer; wherein, the transparent copper The reflectivity of the incident light measured from the second surface of the transparent substrate to the first surface of the foil substrate is less than 25%, and the peeling strength of the transparent substrate and the metal conductive layer is greater than 0.5kgf/cm .

在實施例中,該透明基材的透光度大於87%,且選自由以下所組成之群組:聚醯亞胺(PI)、聚對苯二甲酸乙二酯(PET)、環烯烴聚合物(COP)及聚碳酸酯(PC)。 In an embodiment, the transmittance of the transparent substrate is greater than 87%, and is selected from the group consisting of: polyimide (PI), polyethylene terephthalate (PET), cyclic olefin polymerization material (COP) and polycarbonate (PC).

在實施例中,該銅層的厚度為0.2~20μm。 In embodiments, the thickness of the copper layer is 0.2~20 μm.

在實施例中,該黑化層還含有磷。 In embodiments, the blackened layer further contains phosphorus.

在實施例中,該透明基材和該黑化層之間存在高分子塗層,且該高分子塗層之透光度大於85%。 In an embodiment, a polymer coating exists between the transparent substrate and the blackened layer, and the transmittance of the polymer coating is greater than 85%.

在實施例中,在步驟(A)之後且步驟(B)之前,將高分子塗層貼合於該透明基材的一面,並使該高分子塗層位於該透明基材和該黑化層之間,且該高分子塗層之透光度大於85%。 In the embodiment, after step (A) and before step (B), the polymer coating is attached to one side of the transparent substrate, and the polymer coating is located on the transparent substrate and the blackened layer between, and the light transmittance of the polymer coating is greater than 85%.

在實施例中,該高分子塗層的材料選自由以下所組成之群組:聚醯亞胺(PI)、聚氨酯(PU)、壓克力樹脂及環氧樹脂。 In embodiments, the material of the polymer coating is selected from the group consisting of polyimide (PI), polyurethane (PU), acrylic resin and epoxy resin.

本發明一態樣是鑒於上述習知的問題點所完成者,其目的是,提供一種透明銅箔基板。前述透明銅箔基板能夠在降低反射率的同時,解決黑化層針孔過多的問題和形成配線時的側蝕問題。 One aspect of the present invention has been accomplished in view of the above-mentioned conventional problems, and an object thereof is to provide a transparent copper foil substrate. The aforementioned transparent copper foil substrate can reduce the reflectivity while solving the problem of excessive pinholes in the blackened layer and the problem of undercutting when forming wiring.

進一步地,本發明一態樣是鑒於上述習知的問題點所完成者,其目的是,提供一種透明銅箔基板的製造方法。藉由前述製造方法,能夠獲得具有低反射率且剝離強度足夠之透明銅箔基板。 Furthermore, one aspect of the present invention was completed in view of the above-mentioned conventional problems, and its purpose is to provide a method for manufacturing a transparent copper foil substrate. Through the aforementioned manufacturing method, a transparent copper foil substrate with low reflectivity and sufficient peel strength can be obtained.

1:透明基材 1:Transparent substrate

11:第一表面 11: First surface

12:第二表面 12: Second surface

2:黑化層 2: Blackened layer

3:銅層 3: Copper layer

100:透明銅箔基板 100:Transparent copper foil substrate

L:入射光 L: incident light

圖1係本發明一實施例的透明銅箔基板之剖面示意圖。 Figure 1 is a schematic cross-sectional view of a transparent copper foil substrate according to an embodiment of the present invention.

圖2係本發明一實施例的透明銅箔基板之製造流程圖。 Figure 2 is a manufacturing flow chart of a transparent copper foil substrate according to an embodiment of the present invention.

圖3係本發明透明銅箔基板之反射率的測量示意圖。 Figure 3 is a schematic diagram of the reflectivity measurement of the transparent copper foil substrate of the present invention.

圖4係本發明實施例3和比較例1、8之蝕刻線路的底部外觀照片。 Figure 4 is a bottom appearance photo of the etched circuit in Example 3 of the present invention and Comparative Examples 1 and 8.

圖5係本發明實施例3和比較例1、8之可見光區的反射率比較圖。 Figure 5 is a comparative chart of reflectance in the visible light region between Example 3 of the present invention and Comparative Examples 1 and 8.

以下係藉由特定的具體實施例說明本發明之實施方式,熟習此技藝之人士可由本說明書所揭示之內容瞭解本發明之其他優點與功效。本發明 也可藉由其他不同的具體實施例加以實施或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。 The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification. invention It can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

除非文中另有說明,否則說明書及所附申請專利範圍中所使用之術語「或」包括「及/或」之含義。 Unless the context indicates otherwise, the term "or" used in the specification and the appended claims includes the meaning of "and/or".

除非文中另有說明,否則說明書及所附申請專利範圍中所使用之術語「A~B」係包括「A以上且B以下」之含義。例如,術語「10~40重量%」係包括「10重量%以上且40重量%以下」之含義。 Unless otherwise stated in the text, the terms "A~B" used in the specification and the appended patent application scope include the meaning of "above A and below B". For example, the term "10 to 40% by weight" includes the meaning of "more than 10% by weight and less than 40% by weight".

<透明銅箔基板> <Transparent copper foil substrate>

首先,請參照圖1,圖1係本發明一實施例的透明銅箔基板之剖面示意圖。如圖1所示,本發明一實施例的透明銅箔基板100係包含:透明基材1;黑化層2;和銅層3。其中,透明基材1包括第一表面11和第二表面12,且黑化層2和銅層3可複合為金屬導電層。又,透明銅箔基板100之由透明基材1的第二表面12穿射入第一表面11方向所測得之入射光的反射率小於25%以下(參照圖3),且透明基材1與金屬導電層的剝離強度大於0.5kgf/cm,較佳大於0.55kgf/cm。 First, please refer to FIG. 1 , which is a schematic cross-sectional view of a transparent copper foil substrate according to an embodiment of the present invention. As shown in FIG. 1 , a transparent copper foil substrate 100 according to an embodiment of the present invention includes: a transparent base material 1 ; a blackened layer 2 ; and a copper layer 3 . The transparent substrate 1 includes a first surface 11 and a second surface 12, and the blackened layer 2 and the copper layer 3 can be combined into a metal conductive layer. In addition, the reflectivity of the incident light measured in the direction of the second surface 12 of the transparent substrate 1 penetrating into the first surface 11 of the transparent copper foil substrate 100 is less than 25% (see Figure 3), and the transparent substrate 1 The peeling strength from the metal conductive layer is greater than 0.5kgf/cm, preferably greater than 0.55kgf/cm.

接著,如圖1所示,黑化層2係形成於透明基材1的第一表面11,而銅層3係形成於黑化層2之遠離透明基材1的一面,即透明銅箔基板100的結構係依序為透明基材1、黑化層2和銅層3。接下來,針對本發明的透明銅箔基板100進行詳細說明。 Next, as shown in Figure 1, the blackened layer 2 is formed on the first surface 11 of the transparent substrate 1, and the copper layer 3 is formed on the side of the blackened layer 2 away from the transparent substrate 1, that is, the transparent copper foil substrate The structure of 100 is a transparent substrate 1, a blackened layer 2 and a copper layer 3 in order. Next, the transparent copper foil substrate 100 of the present invention will be described in detail.

<<透明基材>> <<Transparent substrate>>

只要是透光度大於87%的材料,則並未特別限制,皆可作為本發明的透明基材。又,在考慮到輕量化等情況下,透明基材較佳係由塑膠材料而成。具體來說,透明基材的材料可選自由以下所組成之群組:聚醯亞胺(PI)、聚對苯二 甲酸乙二酯(PET)、環烯烴聚合物(COP)及聚碳酸酯(PC)。在一具體例中,透明基材係選用聚醯亞胺(PI)。上述透明基材的材料來源可為市售品,例如透明基材可選用達邁科技製的透明聚醯亞胺膜,型號為OT2-025。 As long as the material has a transmittance greater than 87%, it is not particularly limited and can be used as the transparent base material of the present invention. In addition, in consideration of lightweight, etc., the transparent base material is preferably made of plastic material. Specifically, the material of the transparent substrate can be selected from the group consisting of: polyimide (PI), polyterephthalene Ethylene formate (PET), cycloolefin polymer (COP) and polycarbonate (PC). In a specific example, the transparent substrate is polyimide (PI). The material source of the above-mentioned transparent substrate can be commercially available products. For example, the transparent substrate can be a transparent polyimide film made by Damai Technology, model number OT2-025.

<<黑化層>> <<Blackened layer>>

黑化層係包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21,且黑化層之片電阻小於30Ω/m2。又,因為磷屬於強還原劑,故藉由添加磷,有助於進行化學鍍。具體來說,藉由使化學鍍液中包含作為還原劑的次磷酸鈉(Sodium hypophosphite),在鎳離子的還原沉積過程中,磷也會共同析出作為合金組成之一;其中,磷的含量較佳為析出合金的1~14重量%,並可經由化學鍍液的成份和操作條件來控制。在一實施例中,黑化層係包含鎳、鋅和磷的三元合金。此外,黑化層的厚度較佳為50~250nm,若黑化層的厚度小於50nm,則會導致黑化層的電阻太高(大於30Ω/m2),不利於後續電鍍銅層;若黑化層的厚度大於250nm,則會導致黑化層的應力大,內部有微裂紋(micro crack),不利電流的通電。 The blackened layer includes nickel and zinc, and the weight ratio of zinc/nickel is 0.1~0.21, and the sheet resistance of the blackened layer is less than 30Ω/m 2 . In addition, since phosphorus is a strong reducing agent, adding phosphorus facilitates electroless plating. Specifically, by including sodium hypophosphite as a reducing agent in the electroless plating solution, phosphorus will also co-precipitate as one of the alloy components during the reduction deposition process of nickel ions; among them, the content of phosphorus is relatively high. It is best to precipitate 1~14% by weight of the alloy, and can be controlled by the composition and operating conditions of the electroless plating solution. In one embodiment, the blackened layer includes a ternary alloy of nickel, zinc and phosphorus. In addition, the thickness of the blackened layer is preferably 50~250nm. If the thickness of the blackened layer is less than 50nm, the resistance of the blackened layer will be too high (greater than 30Ω/m 2 ), which is not conducive to subsequent electroplating of the copper layer; if the blackened layer If the thickness of the blackened layer is greater than 250nm, the stress in the blackened layer will be large and there will be micro cracks inside, which will be detrimental to the flow of current.

在本發明中,黑化層係以化學鍍在透明基材的一面上形成鍍層。就化學鍍而言,可以是習知的化學鍍方法(依據氧化還原反應原理,利用強還原劑在含有金屬離子的溶液中,將金屬離子還原成金屬而沉積在各種材料表面而形成緻密鍍層的方法),並未特別限制。又,就化學鍍的具體例而言,首先將透明基材進行電暈改質處理,作業條件為功率3kw、速度3m/分鐘,接著浸泡於40℃的2%氫氧化鉀(KOH)溶液中150秒,完成透明基材膜面的親水化處理。再參照日本奧野製藥股份有限公司的SLP金屬化製程(SLP process),使用SLP系 列無電解鍍鎳試劑(包括SLP-200、SLP-300、SLP-400、SLP-500、SLP-660)依續進行電荷調節、預浸、催化、速化、還原鍍鎳等步驟,作業條件說明如下。 In the present invention, the blackened layer is formed on one side of the transparent substrate by electroless plating. As for electroless plating, it can be the commonly known electroless plating method (based on the principle of redox reaction, using a strong reducing agent in a solution containing metal ions to reduce metal ions into metal and deposit them on the surface of various materials to form a dense coating. method) and is not particularly limited. In addition, as a specific example of electroless plating, the transparent substrate is first subjected to corona modification treatment, and the operating conditions are power 3kw, speed 3m/minute, and then immersed in a 2% potassium hydroxide (KOH) solution at 40°C. It takes 150 seconds to complete the hydrophilization treatment of the transparent substrate film surface. Then refer to the SLP metallization process (SLP process) of Japan Okuno Pharmaceutical Co., Ltd., use the SLP system A series of electroless nickel plating reagents (including SLP-200, SLP-300, SLP-400, SLP-500, SLP-660) are used to sequentially perform charge adjustment, pre-soaking, catalysis, acceleration, reduction nickel plating and other steps. Operating conditions Instructions are as follows.

1.將透明基材浸泡於65℃的SLP-200溶液中75秒以進行電荷調節,取出並水洗。2.連續浸泡於25℃的SLP-300溶液中25秒及SLP-400溶液中75秒,使觸媒附著於透明基材表面,取出並水洗。3.接著浸泡於35℃的SLP-500溶液中75秒以活化觸媒,取出並水洗。4.最後浸泡於添加0~0.014mole/L硫酸鋅的SLP-660溶液中,並控制pH值8.5~9.0、溫度40~75℃、反應3~25分鐘,取出並水洗,即可完成鍍有不同厚度黑化層的透明基材+黑化層。 1. Soak the transparent substrate in the SLP-200 solution at 65°C for 75 seconds to adjust the charge, take it out and wash it with water. 2. Continuously soak in SLP-300 solution at 25°C for 25 seconds and SLP-400 solution for 75 seconds to make the catalyst adhere to the surface of the transparent substrate, take it out and wash it with water. 3. Then soak it in SLP-500 solution at 35°C for 75 seconds to activate the catalyst, take it out and wash it with water. 4. Finally, soak in the SLP-660 solution with 0~0.014 mole/L zinc sulfate added, and control the pH value to 8.5~9.0, the temperature to 40~75°C, and react for 3~25 minutes. Take it out and wash it with water to complete the plating. Transparent substrate + blackened layer with different thicknesses of blackened layer.

<<銅層>> <<Copper Layer>>

本發明的銅層並未特別限制,只要是能夠形成後續蝕刻線路的銅層即可,並未特別限制。又,在本發明一實施例中,較佳係使用電鍍的方式將銅層鍍於黑化層上,就用於銅層的電鍍液而言,可為市售品,例如可使用硫酸銅電鍍液(購自濟緯實業股份有限公司)等。此外,銅層的厚度較佳為0.2~20μm。 The copper layer of the present invention is not particularly limited as long as it is a copper layer that can form subsequent etching circuits. Furthermore, in one embodiment of the present invention, it is preferable to use electroplating to plate the copper layer on the blackened layer. As for the electroplating solution used for the copper layer, it can be a commercial product, for example, copper sulfate electroplating can be used. Liquid (purchased from Jiwei Industrial Co., Ltd.), etc. In addition, the thickness of the copper layer is preferably 0.2~20 μm.

接著,在一實施例中,為了增加透明基材和黑化層的結合力,能夠於透明基材和黑化層之間存在一高分子塗層(未圖示)。且為了確保透明銅箔基板整體的透光性質,高分子塗層之透光度需大於85%。具體來說,高分子塗層的材料可選自由以下所組成之群組:聚醯亞胺(PI)、聚氨酯(PU)、壓克力樹脂及環氧樹脂。同樣地,上述高分子塗層的材料來源可為市售品。 Next, in one embodiment, in order to increase the bonding force between the transparent substrate and the blackened layer, a polymer coating (not shown) can be present between the transparent substrate and the blackened layer. In order to ensure the overall light transmittance of the transparent copper foil substrate, the light transmittance of the polymer coating needs to be greater than 85%. Specifically, the material of the polymer coating can be selected from the group consisting of: polyimide (PI), polyurethane (PU), acrylic resin and epoxy resin. Likewise, the material source of the above-mentioned polymer coating can be commercially available products.

<透明銅箔基板的製造方法> <Manufacturing method of transparent copper foil substrate>

首先,請參照圖2,圖2係本發明一實施例的透明銅箔基板之製造流程圖。如圖2所示,本發明一實施例的透明銅箔基板之製造方法係包含:提供透明基材1,其包括第一表面11及第二表面12(A步驟);藉由化學鍍將黑化層2形成於透 明基材1的第一表面11(B步驟);藉由電鍍將銅層3形成於黑化層2之遠離透明基材1的一面(C步驟)。 First, please refer to FIG. 2 , which is a manufacturing flow chart of a transparent copper foil substrate according to an embodiment of the present invention. As shown in Figure 2, a method for manufacturing a transparent copper foil substrate according to an embodiment of the present invention includes: providing a transparent substrate 1, which includes a first surface 11 and a second surface 12 (step A); Chemical layer 2 is formed in the transparent The first surface 11 of the base material 1 is exposed (step B); the copper layer 3 is formed on the side of the blackened layer 2 away from the transparent base material 1 by electroplating (step C).

又,為了增加透明基材和黑化層的結合力,於一實施例中,在A步驟之後且B步驟之前,將高分子塗層(未圖示)塗佈於透明基材的第一表面,並使該高分子塗層位於該透明基材和該黑化層之間。 Furthermore, in order to increase the bonding force between the transparent substrate and the blackened layer, in one embodiment, after step A and before step B, a polymer coating (not shown) is coated on the first surface of the transparent substrate. , and the polymer coating is located between the transparent substrate and the blackened layer.

接著,就電鍍而言,可使用習知的電鍍方法,例如在添加有電鍍液的電鍍槽中進行卷對卷(RTR,Roll to Roll)電鍍。通電條件可為電流2.7A/電壓3V,平均鍍速為0.5μm/min,控制電鍍時間即可鍍上不同厚度的銅層。又,就電鍍液而言,可為包含150g/L的H2SO4、120g/L的CuSO4及濃度50ppm的氯離子之電鍍液,並未特別限制。 Next, as for electroplating, a conventional electroplating method can be used, such as roll-to-roll (RTR, Roll to Roll) electroplating in an electroplating tank added with a plating solution. The energization conditions can be current 2.7A/voltage 3V, and the average plating speed is 0.5μm/min. By controlling the plating time, copper layers of different thicknesses can be plated. Moreover, the plating solution may be one containing 150 g/L H 2 SO 4 , 120 g/L CuSO 4 and a chloride ion concentration of 50 ppm, and is not particularly limited.

此處,關於化學鍍、透明基材、黑化層、銅層和高分子塗層的詳細內容係如前述,於此不再贅述。 Here, the details about electroless plating, transparent substrate, blackened layer, copper layer and polymer coating are as mentioned above and will not be repeated here.

[實施例] [Example]

以下,雖然藉由各實施例和比較例來具體的說明本發明,但本發明並不限於此等實施例和比較例。 Hereinafter, although each Example and a comparative example are used to demonstrate this invention concretely, this invention is not limited to these Examples and Comparative examples.

[反射率的測定] [Measurement of reflectivity]

使用中燦科技有限公司的分光色差儀(Spectrophotometer)(型號:X-Rite/Ci60)進行透明銅箔基板之反射率的測定。首先,校正分光色差儀並將分析模式調整為反射率量測,再把10cm*10cm之透明銅箔基板的待測樣品放置於白色底板上。 The reflectance of the transparent copper foil substrate was measured using the Spectrophotometer (Model: X-Rite/Ci60) of Zhongcan Technology Co., Ltd. First, calibrate the spectrophotometer and adjust the analysis mode to reflectance measurement, and then place the sample to be measured on a 10cm*10cm transparent copper foil substrate on a white bottom plate.

接著,參照圖3,圖3係本發明透明銅箔基板之反射率的測量示意圖。如圖3所示,使透明基材1面朝上,下壓分光色差儀,使入射光從第二表面12穿射入 第一表面11方向,即可量測入射角10°、波長範圍400nm~700nm的入射光L之反射率。 Next, refer to FIG. 3 , which is a schematic diagram of measuring the reflectivity of the transparent copper foil substrate of the present invention. As shown in Figure 3, make the transparent substrate 1 face up, press down the spectrophotometer, and let the incident light pass through the second surface 12. In the direction of the first surface 11, the reflectance of the incident light L with an incident angle of 10° and a wavelength range of 400nm~700nm can be measured.

[剝離強度的測定] [Measurement of Peel Strength]

使用廣鍊儀器的萬能拉力機(型號:ΩC-538M1)進行透明銅箔基板中的透明基材與金屬導電層之剝離強度的測定。首先,將透明銅箔基板之銅層厚度調整為18μm,並依據IPC-TM-650 2.4.9的規範,製作線路並於萬能拉力機上進行90°角的剝離強度檢測。 Use Guanglian Instrument's universal tensile machine (model: ΩC-538M1) to measure the peel strength of the transparent substrate and the metal conductive layer in the transparent copper foil substrate. First, adjust the thickness of the copper layer of the transparent copper foil substrate to 18 μm. According to the specifications of IPC-TM-650 2.4.9, the circuit is produced and the peel strength test is performed at a 90° angle on a universal tensile machine.

[片電阻的測定] [Measurement of sheet resistance]

使用南北貿易有限公司的低阻抗分析儀(型號:LORESTA/MCP-T370)進行具有黑化層的透明基材之片電阻的測定,以評估是否能夠在黑化層上進一步電鍍銅層。首先,將具有黑化層的透明基材之10cm*10cm樣品置於量測台上,將四點探針探頭均勻接觸黑化層的鎳面即可量測片電阻。此外,將下述各實施例和比較例的反射率、剝離強度和片電阻的測定結果整理於表1~2。 The sheet resistance of the transparent substrate with a blackened layer was measured using the low impedance analyzer of North and South Trading Co., Ltd. (Model: LORESTA/MCP-T370) to evaluate whether a copper layer can be further electroplated on the blackened layer. First, place a 10cm*10cm sample of a transparent substrate with a blackened layer on the measuring table, and measure the sheet resistance by evenly contacting the four-point probe probe with the nickel surface of the blackened layer. In addition, the measurement results of reflectance, peel strength, and sheet resistance of each of the following Examples and Comparative Examples are summarized in Tables 1 to 2.

<實施例1> <Example 1>

(透明基材前處理) (Transparent substrate pre-treatment)

使用達邁科技製的透明聚醯亞胺膜(型號為OT2-025)作為透明基材,於電暈(corona)處理機(日本WEDGE公司製)上進行連續式親水化改質,作業條件為功率3kw、速度3m/分鐘。接著將透明基材裁剪為15cm*15cm的尺寸,並浸泡於40℃的2%氫氧化鉀(KOH)溶液中150秒。 Use the transparent polyimide film (model OT2-025) produced by Damai Technology as the transparent substrate, and perform continuous hydrophilic modification on a corona treatment machine (manufactured by Japan WEDGE Co., Ltd.). The operating conditions are: Power 3kw, speed 3m/min. Then cut the transparent substrate into a size of 15cm*15cm and soak it in a 2% potassium hydroxide (KOH) solution at 40°C for 150 seconds.

(化學鍍黑化層) (Electroless plating black layer)

以日本奧野製藥股份有限公司的SLP金屬化製程(SLP process)陸續進行電荷調節、預浸、催化、速化、還原鍍黑化層等步驟,作業條件說明如下。1.將 完成前處理的透明基材浸泡於65℃的SLP-200溶液中75秒以進行電荷調節,取出並水洗;2.連續浸泡於25℃的SLP-300溶液中25秒及SLP-400溶液中75秒,使觸媒附著於基材表面,取出並水洗;3.接著浸泡於35℃的SLP-500溶液中75秒以活化觸媒,取出並水洗;4.最後浸泡於添加硫酸鋅的SLP-660溶液中,以形成雙面鍍有黑化層之透明基材。其中,黑化層的鍍液包含約17~20g/L之次磷酸鈉、約4.6~5.0g/L的鎳,0.006mole/L的硫酸鋅,在pH=9.0及溫度45℃的條件下浸泡10分鐘,即可完成化學鍍黑化層。隨即用CuCl2溶液蝕刻其中一面黑化層,得到單面(第一表面)鍍有包含鎳/鋅/磷三元合金的黑化層之透明基材。又,將實施例1的化學鍍條件、黑化層的組成和黑化層鍍膜的特性整理於表1。 The SLP metallization process (SLP process) of Japan Okuno Pharmaceutical Co., Ltd. is used to successively carry out steps such as charge adjustment, pre-impregnation, catalysis, acceleration, reduction and blackening layer plating. The operating conditions are described below. 1. Soak the pre-treated transparent substrate in the SLP-200 solution at 65°C for 75 seconds for charge adjustment, take it out and wash it; 2. Continuously soak it in the SLP-300 solution at 25°C for 25 seconds and SLP-400 Soak in the solution for 75 seconds to make the catalyst adhere to the surface of the substrate, take it out and wash it with water; 3. Then soak it in the SLP-500 solution at 35°C for 75 seconds to activate the catalyst, take it out and wash it with water; 4. Finally soak it in the solution with zinc sulfate added of SLP-660 solution to form a transparent substrate coated with a blackened layer on both sides. Among them, the plating solution for the blackened layer contains about 17~20g/L sodium hypophosphite, about 4.6~5.0g/L nickel, and 0.006 mole/L zinc sulfate, and is soaked at pH=9.0 and a temperature of 45°C. In 10 minutes, the electroless black plating layer can be completed. Then, one side of the blackened layer is etched with a CuCl 2 solution to obtain a transparent substrate plated with a blackened layer containing a nickel/zinc/phosphorus ternary alloy on one side (the first surface). In addition, the electroless plating conditions, the composition of the blackened layer, and the characteristics of the blackened layer coating of Example 1 are summarized in Table 1.

(電鍍銅層) (Electroplated copper layer)

將前述單面鍍有包含鎳/鋅/磷三元合金的黑化層之透明基材以不鏽鋼框架固定,先浸泡於3% H2SO4溶液中1分鐘以清潔表面,再放入電鍍槽進行RTR電鍍。電鍍液包含150g/L之H2SO4、120g/L之CuSO4及濃度50ppm之氯離子。通電條件為電流2.7A/電壓3V,平均鍍速0.5μm/min,控制時間即可按照需求沉積0.2~20μm厚的銅層。 The aforementioned transparent substrate plated with a blackened layer containing nickel/zinc/phosphorus ternary alloy on one side is fixed on a stainless steel frame, first soaked in 3% H 2 SO 4 solution for 1 minute to clean the surface, and then placed in the electroplating tank Perform RTR plating. The electroplating solution contains 150g/L H 2 SO 4 , 120g/L CuSO 4 and chloride ions with a concentration of 50ppm. The energization conditions are current 2.7A/voltage 3V, and the average plating speed is 0.5μm/min. By controlling the time, a 0.2~20μm thick copper layer can be deposited as required.

<比較例1~6和實施例2~7> <Comparative Examples 1 to 6 and Examples 2 to 7>

接著,以與實施例1相同的方式,使用相同之黑化層鍍液,並基於下述表1來變更化學鍍條件和黑化層的組成,來形成比較例1~6和實施例2~7的透明銅箔基板。 Next, in the same manner as in Example 1, the same blackened layer plating solution was used, and the electroless plating conditions and the composition of the blackened layer were changed based on Table 1 below to form Comparative Examples 1 to 6 and Examples 2 to 7 transparent copper foil substrate.

Figure 111150415-A0305-02-0012-1
Figure 111150415-A0305-02-0012-1

首先,從表1能夠得知,因為實施例1~7皆使用化學鍍來形成黑化層,且黑化層中鋅/鎳的重量比為0.1~0.21之間,黑化層的片電阻小於30Ω/m2,故能夠獲得由透明基材的第二表面穿射入第一表面方向所測得之入射光的反射率小於25%之透明銅箔基板,且同時具備足夠的剝離強度(>0.5kgf/cm)。 First, it can be seen from Table 1 that because Examples 1 to 7 all use electroless plating to form the blackened layer, and the weight ratio of zinc/nickel in the blackened layer is between 0.1 and 0.21, the sheet resistance of the blackened layer is less than 30Ω/m 2 , so it is possible to obtain a transparent copper foil substrate with a reflectivity of less than 25% of the incident light measured in the direction of the second surface of the transparent substrate penetrating into the first surface, and at the same time having sufficient peel strength (> 0.5kgf/cm).

接著,因為比較例1~3之黑化層中鋅/鎳的重量比小於0.1,故此等比較例所製造之透明銅箔基板的反射率大於25%,不符合需求。另,因為比較例6之黑化層中鋅/鎳的重量比大於0.21,故使得鍍率過低且片電阻過高(大於30Ω/m2),不利於後續電鍍銅層。 Next, because the weight ratio of zinc/nickel in the blackened layer of Comparative Examples 1 to 3 is less than 0.1, the reflectivity of the transparent copper foil substrates produced in these comparative examples is greater than 25%, which does not meet the requirements. In addition, because the weight ratio of zinc/nickel in the blackened layer of Comparative Example 6 is greater than 0.21, the plating rate is too low and the sheet resistance is too high (more than 30Ω/m 2 ), which is not conducive to subsequent electroplating of the copper layer.

再者,因為比較例4~5的黑化層厚度分別小於50nm及大於250nm,故使得片電阻過高(大於30Ω/m2),不利於後續電鍍銅層。 Furthermore, because the thickness of the blackened layer in Comparative Examples 4 to 5 is less than 50 nm and greater than 250 nm respectively, the sheet resistance is too high (more than 30Ω/m 2 ), which is not conducive to subsequent electroplating of the copper layer.

<比較例7> <Comparative Example 7>

比較例7與上述實施例1~7和比較例1~6的主要差異是,比較例7使用真空濺鍍方式製造黑化層,且黑化層為金屬氧化物(氧化銅)。 The main difference between Comparative Example 7 and the above-mentioned Examples 1 to 7 and Comparative Examples 1 to 6 is that Comparative Example 7 uses vacuum sputtering to produce the blackened layer, and the blackened layer is metal oxide (copper oxide).

首先,將10cm*10cm透明聚醯亞胺膜作為透明基材並黏貼於玻璃基板上,接著將其置入濺鍍機(真空磁控電漿濺鍍系統,高敦科技股份有限公司製)腔體中,關閉艙門並開始抽真空。 First, a 10cm*10cm transparent polyimide film is used as a transparent substrate and adhered to the glass substrate, and then placed into the chamber of a sputtering machine (vacuum magnetron plasma sputtering system, manufactured by Goldon Technology Co., Ltd.) body, close the hatch and start vacuuming.

接著,先鍍第一層金屬氧化物,靶材選用氧化銅,以形成濺鍍層1(黑化層)。鍍膜條件:工作壓力4.8*10-3torr、氬氣流量30sccm、功率150w、時間14min,即可得到厚度622Å的氧化銅層(黑化層),外觀為黑色。 Next, the first layer of metal oxide is plated, and copper oxide is selected as the target material to form the sputtering layer 1 (blackened layer). Coating conditions: Working pressure 4.8*10 -3 torr, argon flow 30sccm, power 150w, time 14min, a copper oxide layer (blackened layer) with a thickness of 622Å can be obtained, with a black appearance.

然後,在不取出玻璃基板且在真空氛圍下,使用銅靶材於濺鍍層1上濺鍍第二層金屬,並形成濺鍍層2(銅層)。鍍膜條件:功率75w、時間5min,即可得到厚度911Å的銅層。 Then, without taking out the glass substrate and in a vacuum atmosphere, a copper target is used to sputter a second layer of metal on the sputtering layer 1 to form a sputtering layer 2 (copper layer). Coating conditions: power 75w, time 5min, a copper layer with a thickness of 911Å can be obtained.

<比較例8> <Comparative Example 8>

比較例8與比較例7類似地,使用濺鍍方式製造黑化層,惟濺鍍條件和黑化層的組成與比較例7不同。 Comparative Example 8 is similar to Comparative Example 7 in that the blackened layer is produced by sputtering, but the sputtering conditions and the composition of the blackened layer are different from Comparative Example 7.

首先,先濺鍍第一層金屬氧化物,使用銅鎳合金靶材(靶材的Cu/Ni比例為85/15),並通入氧氣進行反應式鍍膜,以形成濺鍍層1(黑化層)。鍍膜條件:工作壓力6.0*10-3torr、氬氣流量21sccm、氧氣流量9sccm、功率300w、時間7min,即可得到厚度564Å的銅鎳氧化物合金層(黑化層),外觀為黑色。 First, the first layer of metal oxide is sputtered, using a copper-nickel alloy target (the Cu/Ni ratio of the target is 85/15), and passing in oxygen for reactive coating to form sputtering layer 1 (blackened layer) ). Coating conditions: Working pressure 6.0*10 -3 torr, argon flow 21sccm, oxygen flow 9sccm, power 300w, time 7min, a copper-nickel oxide alloy layer (blackened layer) with a thickness of 564Å can be obtained, with a black appearance.

然後,在不取出玻璃基板,且停止氧氣供應的情況下,接著使用銅靶材於濺鍍層1上濺鍍第二層金屬,以形成濺鍍層2(銅層)。鍍膜條件:功率150w、時間3min,即可得到厚度989Å的銅層。接著,將比較例7~8的鍍膜特性顯示於表2。 Then, without taking out the glass substrate and stopping the supply of oxygen, a copper target is used to sputter a second layer of metal on the sputtering layer 1 to form the sputtering layer 2 (copper layer). Coating conditions: power 150w, time 3min, a copper layer with a thickness of 989Å can be obtained. Next, the coating characteristics of Comparative Examples 7 to 8 are shown in Table 2.

Figure 111150415-A0305-02-0014-2
Figure 111150415-A0305-02-0014-2

如表2所示,雖然比較例7~8的片電阻和反射率皆符合需求,但因為比較例7~8係使用濺鍍法來形成黑化層而有大量針孔之品質不良的問題,故後續形成之透明銅箔基板的剝離強度僅約0.3kgf/cm左右,不符合需求。 As shown in Table 2, although the sheet resistance and reflectivity of Comparative Examples 7 to 8 meet the requirements, because Comparative Examples 7 to 8 use sputtering to form the blackened layer, there are a large number of pinholes and poor quality. Therefore, the peel strength of the subsequently formed transparent copper foil substrate is only about 0.3kgf/cm, which does not meet the requirements.

[測試例] [Test example]

接著,使用實施例3、比較例1和比較例8所獲得的透明銅箔基板進行線路的實作,並進行蝕刻線路的測試。 Next, circuits were implemented using the transparent copper foil substrates obtained in Example 3, Comparative Example 1, and Comparative Example 8, and the etched circuits were tested.

(線路製作) (line production)

將實施例3、比較例1和比較例8所獲得的透明銅箔基板依續進行前處理、壓膜、曝光、顯影、鍍銅、去膜、快蝕等半加成線路製程(Semi-additive process),對應地製備出具有線寬/線距為45/45μm的透明軟性電路板1~3。 The transparent copper foil substrates obtained in Example 3, Comparative Example 1 and Comparative Example 8 were successively subjected to semi-additive circuit processes such as pre-treatment, lamination, exposure, development, copper plating, film removal, and rapid etching. process), correspondingly prepare transparent flexible circuit boards 1~3 with line width/line spacing of 45/45μm.

(蝕刻線路測試) (Etched line test)

將前述透明軟性電路板1~3放置於金相顯微鏡(Nikon LV100金相顯微鏡,購自國祥貿易)的觀察檯面上,使透明PI面朝上,以20倍物鏡檢視線路底部,確認線路的黑化層側蝕(under-cut)程度。將結果顯示於圖4。 Place the aforementioned transparent flexible circuit boards 1 to 3 on the observation table of a metallographic microscope (Nikon LV100 metallographic microscope, purchased from Guoxiang Trading), with the transparent PI side facing up, and inspect the bottom of the line of sight with a 20x objective lens to confirm the wiring. The degree of under-cut of the blackened layer. The results are shown in Figure 4.

圖4係本發明實施例3、比較例1和比較例8之蝕刻線路的底部外觀照片。圖4的(A)、(B)及(C)係分別對應實施例3(化學電鍍,鎳/鋅/磷合金)、比較例1(化學電鍍,鎳/磷合金)和比較例8(真空濺鍍,氧化銅合金)。 Figure 4 is a photo of the bottom appearance of etched circuits in Example 3, Comparative Example 1 and Comparative Example 8 of the present invention. (A), (B) and (C) in Figure 4 correspond to Example 3 (electroless plating, nickel/zinc/phosphorus alloy), Comparative Example 1 (electroless plating, nickel/phosphorus alloy) and Comparative Example 8 (vacuum) respectively. sputtering, oxidized copper alloy).

如圖4的(A)所示,因為實施例3的透明銅箔基板的反射率低,且黑化層係使用化學鍍來形成,其蝕刻線路的底部外觀照片呈現不反光且無側蝕的狀態;相對於此,如圖4的(B)所示,因為比較例1的黑化層未包含鋅,透明銅箔基板的反射率高,故其外觀照片雖然無側蝕但呈現反光的狀態;又,如圖4的(C)所示,因為比較例8的黑化層係由真空濺鍍形成,黑化層中有針孔,故其 外觀照片雖然無反光但呈現嚴重側蝕的狀態。又,雖然比較例8使用銅鎳合金靶材,藉由鎳成分可以降低鍍層的蝕刻速率,減少其金屬氧化物在製作線路的側蝕程度,但比較例8的線路底部仍發現嚴重側蝕。 As shown in Figure 4 (A), because the reflectivity of the transparent copper foil substrate of Example 3 is low and the blackened layer is formed using electroless plating, the bottom appearance photo of the etched circuit appears non-reflective and has no side etching. state; on the other hand, as shown in Figure 4(B), since the blackened layer of Comparative Example 1 does not contain zinc and the reflectivity of the transparent copper foil substrate is high, the appearance photo shows a reflective state although there is no undercutting. ; Also, as shown in Figure 4 (C), because the blackened layer of Comparative Example 8 is formed by vacuum sputtering, there are pinholes in the blackened layer, so it is Although the exterior photos are non-reflective, they show severe side erosion. In addition, although Comparative Example 8 uses a copper-nickel alloy target, the nickel component can reduce the etching rate of the plating layer and reduce the degree of undercutting of the metal oxide in the fabricated circuits. However, severe undercutting was still found at the bottom of the circuit in Comparative Example 8.

接著,請參照圖5,圖5係本發明實施例3和比較例1、8之可見光區的反射率比較圖。如圖5所示,隨著入射光的波長從400nm上升至700nm,比較例1之反射率有增加的傾向,而比較例8之反射率則是先下降再上升,可見兩個比較例的反射率波動較大,使得後續製作之電子產品(例如顯示器)的品質不穩定;相對於此,實施例3之反射率則是呈現大致平穩的趨勢,能夠使得後續製作之電子產品的品質穩定。 Next, please refer to FIG. 5 , which is a comparison chart of reflectance in the visible light region of Example 3 of the present invention and Comparative Examples 1 and 8. As shown in Figure 5, as the wavelength of the incident light increases from 400nm to 700nm, the reflectance of Comparative Example 1 tends to increase, while the reflectance of Comparative Example 8 first decreases and then increases. It can be seen that the reflection of the two comparative examples The reflectivity of Example 3 exhibits a generally stable trend, making the quality of subsequent electronic products (such as displays) unstable.

本發明並不限定於上述各實施形態,可在請求項所示之範圍內做各種的變更,且將不同的實施形態中所揭示之技術手段適宜地組合而得之實施形態亦包含在本發明的技術範圍內。 The present invention is not limited to the above-described embodiments, and various changes can be made within the scope indicated in the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the present invention. within the technical scope.

1:透明基材 1:Transparent substrate

11:第一表面 11: First surface

12:第二表面 12: Second surface

2:黑化層 2: Blackened layer

3:銅層 3: Copper layer

Claims (11)

一種透明銅箔基板,其係包含:透明基材,其包括第一表面及第二表面;黑化層,其係藉由化學鍍而形成於該透明基材的第一表面,該黑化層包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21,且該黑化層之片電阻小於30Ω/m2;及銅層,其係形成於該黑化層之遠離該透明基材的一面,並與該黑化層複合為金屬導電層;其中,該透明銅箔基板之由該透明基材的第二表面穿射入第一表面方向所測得之入射光的反射率小於25%,且該透明基材與該金屬導電層的剝離強度大於0.5kgf/cm。 A transparent copper foil substrate, which includes: a transparent base material, which includes a first surface and a second surface; a blackened layer, which is formed on the first surface of the transparent base material by electroless plating, and the blackened layer Including nickel and zinc, the weight ratio of zinc/nickel is 0.1~0.21, and the sheet resistance of the blackened layer is less than 30Ω/ m2 ; and a copper layer is formed on the blackened layer away from the transparent substrate One side is combined with the blackened layer to form a metal conductive layer; wherein the reflectivity of the incident light measured from the second surface of the transparent substrate to the first surface of the transparent copper foil substrate is less than 25%. , and the peeling strength between the transparent substrate and the metal conductive layer is greater than 0.5kgf/cm. 如請求項1所述之透明銅箔基板,其中,該透明基材的透光度大於87%,且選自由以下所組成之群組:聚醯亞胺(PI)、聚對苯二甲酸乙二酯(PET)、環烯烴聚合物(COP)及聚碳酸酯(PC)。 The transparent copper foil substrate according to claim 1, wherein the transmittance of the transparent substrate is greater than 87%, and is selected from the group consisting of: polyimide (PI), polyethylene terephthalate Diester (PET), cycloolefin polymer (COP) and polycarbonate (PC). 如請求項1所述之透明銅箔基板,其中,該透明基材和該黑化層之間存在高分子塗層,且該高分子塗層之透光度大於85%。 The transparent copper foil substrate as claimed in claim 1, wherein a polymer coating exists between the transparent substrate and the blackened layer, and the transmittance of the polymer coating is greater than 85%. 如請求項3所述之透明銅箔基板,其中,該高分子塗層的材料選自由以下所組成之群組:聚醯亞胺(PI)、聚氨酯(PU)、壓克力樹脂及環氧樹脂。 The transparent copper foil substrate according to claim 3, wherein the material of the polymer coating is selected from the group consisting of: polyimide (PI), polyurethane (PU), acrylic resin and epoxy resin. 如請求項1~4中任一項所述之透明銅箔基板,其中,該黑化層更包括磷。 The transparent copper foil substrate according to any one of claims 1 to 4, wherein the blackened layer further includes phosphorus. 一種透明銅箔基板的製造方法,其係包含: 步驟(A),提供透明基材,其包括第一表面及第二表面;步驟(B),藉由化學鍍將黑化層形成於該透明基材的第一表面,且該黑化層係包括鎳和鋅,並鋅/鎳的重量比為0.1~0.21,且該黑化層之片電阻小於30Ω/m2;及步驟(C),藉由電鍍將銅層形成於該黑化層之遠離該透明基材的一面,並該銅層與該黑化層複合為金屬導電層;其中,該透明銅箔基板之由該透明基材的第二表面穿射入第一表面方向所測得之入射光的反射率小於25%,且該透明基材與該金屬導電層的剝離強度大於0.5kgf/cm。 A method for manufacturing a transparent copper foil substrate, which includes: Step (A), providing a transparent substrate including a first surface and a second surface; Step (B), forming a blackened layer on the transparent substrate through electroless plating The first surface of the substrate, and the blackened layer includes nickel and zinc, and the weight ratio of zinc/nickel is 0.1~0.21, and the sheet resistance of the blackened layer is less than 30Ω/ m2 ; and step (C), A copper layer is formed on the side of the blackened layer away from the transparent substrate by electroplating, and the copper layer and the blackened layer are combined into a metal conductive layer; wherein, the transparent copper foil substrate is composed of The reflectivity of the incident light measured in the direction of the second surface penetrating into the first surface is less than 25%, and the peeling strength of the transparent substrate and the metal conductive layer is greater than 0.5kgf/cm. 如請求項6所述之透明銅箔基板的製造方法,其中,該透明基材的透光度大於87%,且選自由以下所組成之群組:聚醯亞胺(PI)、聚對苯二甲酸乙二酯(PET)、環烯烴聚合物(COP)及聚碳酸酯(PC)。 The manufacturing method of a transparent copper foil substrate as described in claim 6, wherein the transmittance of the transparent substrate is greater than 87%, and is selected from the group consisting of: polyimide (PI), polyparaphenylene Ethylene dicarboxylate (PET), cycloolefin polymer (COP) and polycarbonate (PC). 如請求項6所述之透明銅箔基板的製造方法,其中,該銅層的厚度為0.2~20μm。 The manufacturing method of a transparent copper foil substrate as claimed in claim 6, wherein the thickness of the copper layer is 0.2~20 μm. 如請求項6所述之透明銅箔基板的製造方法,其中,在該步驟(A)之後且該步驟(B)之前,將高分子塗層塗佈於該透明基材的第一表面,並使該高分子塗層位於該透明基材和該黑化層之間。 The manufacturing method of a transparent copper foil substrate as claimed in claim 6, wherein after step (A) and before step (B), a polymer coating is coated on the first surface of the transparent substrate, and The polymer coating is located between the transparent substrate and the blackened layer. 如請求項9所述之透明銅箔基板的製造方法,其中,該高分子塗層之透光度大於85%,並該高分子塗層的材料選自由以下所組成之群組:聚醯亞胺(PI)、聚氨酯(PU)、壓克力樹脂及環氧樹脂。 The manufacturing method of a transparent copper foil substrate as claimed in claim 9, wherein the transmittance of the polymer coating is greater than 85%, and the material of the polymer coating is selected from the group consisting of: polyamide Amine (PI), polyurethane (PU), acrylic resin and epoxy resin. 如請求項6~10中任一項所述之透明銅箔基板的製造方法,其中,該黑化層更包括磷。 The method for manufacturing a transparent copper foil substrate according to any one of claims 6 to 10, wherein the blackened layer further includes phosphorus.
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CN105549775A (en) * 2014-10-24 2016-05-04 大同特殊钢株式会社 Laminated body
TWI622088B (en) * 2015-06-16 2018-04-21 神戶製鋼所股份有限公司 Low reflection electrode for display device, display device, input device, and sputtering target

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105549775A (en) * 2014-10-24 2016-05-04 大同特殊钢株式会社 Laminated body
TWI622088B (en) * 2015-06-16 2018-04-21 神戶製鋼所股份有限公司 Low reflection electrode for display device, display device, input device, and sputtering target

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