TWI829522B - Method for die transfer - Google Patents

Abstract

A method for die transfer, suitable for transferring multiple dies on a first carrier board to a second carrier board. The method for die transfer includes: selecting a transfer area on the first carrier board and one mask pattern unit from multiple mask pattern units as a processing unit. Each mask pattern unit includes multiple light-transmitting patterns arranged in M rows and N columns, and at least one of the values of M and N of a mask pattern unit is different from the values of M and N of the other mask pattern unit. A row pitch and a column pitch of the multiple light-transmitting patterns are greater than or equal to a row pitch and a column pitch of the multiple dies on the first carrier. The method for die transfer also includes: a provided processing light passes through the multiple light-transmitting patterns of the processing unit and the transfer area is irradiated, so that the multiple dies located in the transfer area are transferred to the second carrier.

Description

Grain transfer method

The present invention relates to a transfer method, in particular to a grain transfer method.

Micro LED Display is an emerging display technology in recent years. This technology thins, miniaturizes, and arrays light-emitting diodes (LEDs), and reduces the size of the light-emitting diodes to Micron level. In the current manufacturing process of micro-light-emitting diode displays, mass transfer is one of the key steps, mainly transferring the micro-light-emitting diode grains on the wafer to the driving carrier board. However, because the micro-light-emitting diode dies in different areas on the same wafer may have significant differences in luminance due to process factors, it is easy to have obvious uneven brightness when transferred to a driving carrier board.

The present invention provides a crystal grain transfer method to achieve the effect of crystal grain mixing.

In order to achieve the above advantages or other advantages, an embodiment of the present invention provides a die transfer method suitable for transferring a plurality of die on a first carrier to a second carrier. The die transfer method includes : Select the transfer area on the first carrier plate, and select one of the plurality of mask pattern units as the processing unit. Each mask pattern unit includes a plurality of light-transmitting patterns arranged in M rows and N columns, and any mask pattern unit The values of M and N of the pattern unit are at least one different from the values of M and N of another mask pattern unit, and the row spacing and column spacing of the plurality of light-transmitting patterns are greater than or equal to those of the plurality of dies on the first carrier board. OK distance and row spacing; and providing the processing light beam to illuminate the transfer area through the plurality of light-transmitting patterns of the processing unit, so that the plurality of dies located in the transfer area are transferred to the second carrier plate.

In an embodiment of the present invention, the step of transferring the plurality of dies located in the transfer area to the second carrier plate includes: placing the second carrier plate below the first carrier plate, and the first carrier plate The plurality of die facing the second carrier plate; and sequentially irradiating the plurality of die located in the transfer area with the processing beam, so that the multiple die located in the transfer area are sequentially detached from the first carrier plate and moved to the second carrier plate. The second carrier board sequentially receives a plurality of die dropped from the first carrier board.

In one embodiment of the present invention, the above-mentioned step of sequentially irradiating a plurality of dies located in the transfer area with a processing beam includes: moving the first carrier plate so that the plurality of dies located in the transfer area are sequentially exposed to the processing beam. irradiation.

In an embodiment of the present invention, the moving speed of the second carrier board is less than or equal to greater than the moving speed of the first carrier board.

In an embodiment of the present invention, the step of moving the first carrier plate includes moving the first carrier plate along the first direction and/or the second direction, and the step of moving the second carrier plate includes moving the second carrier plate along the first direction. direction and/or second direction movement.

In one embodiment of the present invention, the overall distribution profile of the plurality of die transferred to the second carrier plate is the same as or different from the overall distribution profile of the plurality of die transferred to the first carrier plate before transfer.

In one embodiment of the present invention, after the die located in the transfer area is transferred to the second carrier, another transfer area that is not adjacent to the transfer area is selected on the first carrier.

The die transfer method of the embodiment of the present invention is to select the transfer area on the first carrier plate and select an appropriate mask pattern as the processing unit. This can not only achieve the effect of die mixing, but also improve the transfer efficiency and transfer rate. Therefore, when the grain transfer method of the embodiment of the present invention is applied to the manufacture of a micro-light-emitting diode display device, the overall brightness of the micro-light-emitting diode display device can be made consistent and the manufacturing efficiency can be improved.

In order to make the above and other objects, features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings.

10, 10a: first carrier board

11, 12, 13: Transfer area

20: Second carrier board

30, 30a: photomask

31, 32, 33: Mask pattern unit

40:Light source

41:Beam

41a: Illumination block

A1, A2, B1, B2: Spacing

D: grain

P: Translucent pattern

R1, R2, R3, R4, R5, R6, R7, R8, R9: Area

S1, S2: steps

FIG. 1 is a schematic flowchart of a grain transfer method according to an embodiment of the present invention.

FIG. 2 is a schematic diagram of the grain transfer process according to an embodiment of the present invention.

FIG. 3 is a schematic top view of the first carrier board according to an embodiment of the present invention.

FIG. 4 is a schematic top view of the second carrier board according to an embodiment of the present invention.

FIG. 5 is a schematic top view of multiple mask pattern units according to an embodiment of the present invention.

6 and 7 are respectively a top view of a first carrier board and a second carrier board during a die transfer process according to an embodiment of the present invention.

8 and 9 are respectively a top view of a first carrier plate and a second carrier plate in another die transfer process according to an embodiment of the present invention.

10 and 11 are respectively a top view of a first carrier plate and a second carrier plate in another die transfer process according to an embodiment of the present invention.

Figure 12 is a schematic top view of the first carrier board according to another embodiment of the present invention.

FIG. 13 is a schematic top view of a mask pattern unit according to another embodiment of the present invention.

FIG. 1 is a schematic flowchart of a grain transfer method according to an embodiment of the present invention. FIG. 2 is a schematic diagram of the grain transfer process according to an embodiment of the present invention. FIG. 3 is a schematic top view of the first carrier board according to an embodiment of the present invention. FIG. 4 is a schematic top view of the second carrier board according to an embodiment of the present invention. FIG. 5 is a schematic top view of multiple mask pattern units according to an embodiment of the present invention. Please refer to Figure 1 to Figure 5. This implementation The die transfer method in this example is suitable for transferring multiple die D on the first carrier plate 10 to the second carrier plate 20. In FIG. 3, because the die D is located below the first carrier plate 10, Drawn with dashed lines. The grain transfer method in this embodiment includes step S1 and step S2, which will be described in detail below.

Step S1 is to select the transfer area 11 on the first carrier 10 and select one from a plurality of mask pattern units (eg, mask pattern units 31, 32, 33) as a processing unit. For example, the die transfer method does not sequentially select transfer areas on the first carrier 10 , but instead selects the best transfer area location, range or area after evaluating the die transfer rate and transfer efficiency. The transfer sequence is not limited to this, and the transfer area can also be randomly selected from the first carrier plate 10 . The above-mentioned mask pattern units 31, 32, and 33 are, for example, provided on the same mask 30, but the mask pattern units 31, 32, and 33 may also be independent masks. In addition, the present invention does not specifically limit the number of mask pattern units 31, 32, and 33.

Each of the above-mentioned mask pattern units 31, 32, and 33 includes a plurality of light-transmitting patterns P arranged in M rows and N columns, and at least one of the values of M and N in any of the mask pattern units 31, 32, and 33 is different from the other. The numerical values of M and N of the mask pattern units 31, 32, and 33 are, for example, the mask pattern units 31, 32, and 33 of this embodiment respectively have 5 rows and 2 columns, 3 rows and 2 columns, and 1 row and 2 columns. Transparent pattern P, but the present invention is not limited to this. The row spacing A2 and the column spacing B2 of the plurality of light-transmitting patterns P are greater than or equal to the row spacing A1 and the column spacing B1 of the plurality of dies D on the first carrier 10 . Specifically, two adjacent ones of the photomask 30 in FIG. 5 The distance between the two light-transmitting patterns P is greater than the distance between two adjacent dies D on the first carrier 10 , that is, the row distance A2 and column distance B2 between the two light-transmissive patterns P are greater than the first carrier 10 The row spacing A1 and column spacing B1 between two adjacent grains D.

In this embodiment, the first carrier board 10 may be a wafer substrate, a relay substrate (such as tape), or other carrier boards that carry the die D. The second carrier board 20 may be a relay substrate (eg, tape), a driving substrate, or other carrier board that carries the die D. Each die D carried by the first carrier 10 is, for example, a micro-die, and its length, width, and thickness are all less than 100 μm, for example. to 50 μm or less, such as 10 μm or less, but not limited to this. The grain D can also be a larger size grain, for example, the length, width, and thickness are approximately between 100 and 1000 μm. In addition, the above-mentioned microcrystal particles may be micro light emitting diodes (Micro LEDs), but the present invention is not limited thereto.

The above-mentioned step S2 is to provide the processing beam 41 to illuminate the transfer area 11 through the plurality of light-transmitting patterns P of the processing unit, so that the plurality of dies D located in the transfer area 11 are transferred to the second carrier plate 20 . Step S2 will be described in detail below with reference to the drawings.

6 and 7 are respectively a top view of a first carrier board and a second carrier board during a die transfer process according to an embodiment of the present invention. Please refer to Figures 2, 5, 6 and 7. In this embodiment, the second carrier board 20 is placed below the first carrier board 10, and the plurality of dies D on the first carrier board 10 face the second carrier board 10. The carrier plate 20 and the photomask 30 are, for example, disposed above the first carrier plate 10 , and the light source 40 is disposed above the photomask 30 . In other words, the first carrier board 10 is disposed between the photomask 30 and the second carrier board 20 , and the photomask 30 is disposed between the light source 40 and the first carrier board 10 . In this embodiment, for example, the transfer area 11 located on the first carrier 10 is selected. The transfer area 11 has, for example, 15 rows and 4 columns, a total of 60 dies D, and then the appropriate selection is made according to the size of the transfer area 11 . The mask pattern unit serves as the processing unit, for example, the mask pattern unit 31. In other embodiments of the present invention, the size of the transfer area can be determined according to the selected position of the transfer area, and a mask pattern unit suitable for the transfer area range can be selected as the processing unit. For example, if the first carrier plate 10 is circular and the transfer area is located near the center of the circle, the range of the transfer area can be enlarged, and a mask pattern unit with more light-transmitting patterns can be selected as the processing unit accordingly. Increase the number of grains D transferred each time and increase the transfer efficiency. If the first carrier plate 10 is circular and the transfer area is, for example, located near the circumference or at the edge of the overall distribution profile of the die D, the range of the transfer area can be narrowed and a mask pattern suitable for the small area can be selected accordingly. unit, thereby improving the transfer rate of grains. The present invention does not specifically limit this.

When the light beam 41 is irradiated on the first carrier 10 through the light-transmitting pattern P of the mask pattern unit 31, for example, 10 irradiation blocks 41a are formed, and the size of each irradiation block 41a is, for example, the same as one die D. are equal in size, and two adjacent irradiation blocks 41 a have, for example, a spacing of two grains D. In other words, the distance between the irradiation blocks 41a at both ends of a row along the first direction X is, for example, 13 dies D.

Align the light beam 41 with the mask pattern unit 31, and simultaneously align the light-transmitting pattern P of the mask pattern unit 31 with the die D in the transfer area 11 of the first carrier board 10 and the second carrier board 20 to receive the die D. A region such as R1 is aligned. Next, the light source 40 is used to provide the processing beam 41 to illuminate the mask pattern unit 31 of the mask 30. When the processing beam 41 passes through the five rows and two columns of the light transmission pattern P of the mask pattern unit 31, it is illuminated to the transfer area 11 to form 10 The irradiation block 41a causes the 10 die D located in the transfer area 11 that are irradiated by the irradiation block 41a to fall off the first carrier plate 10 and transfer to the second carrier plate 20, and then transfer to the second carrier plate. Grain D on 20 is shown in the R1 region. The above steps complete the transfer of the first crystal grain D in the transfer area 11 .

Next, the second transfer of the die D in the transfer area 11 will be described. For example, the first carrier plate 10 is moved by a distance of one die D along the first direction X, and the second carrier plate 20 is moved, for example, along the first direction X. Move the distance of 15 dies D in the direction The area of the carrier 20 to receive the second transferred die D is aligned with R2, for example. Then the processing beam 41 passes through the 10 light-transmitting patterns P of the mask pattern unit 31 again, so that the 10 dies in the transfer area 11 are irradiated by the irradiation block 41a, then fall off from the first carrier plate 10 and transfer to the second For example, region R2 of the carrier board 20 . After that, by analogy, the above-mentioned steps are repeated once more to perform the third transfer of the grain D in the transfer area 11, so that the processing beam 41 passes through the processing unit to form the irradiation area 41a on the first carrier 10 for a total of, for example, The 30 die D located in the transfer area 11 are irradiated three times sequentially. The 30 die D are sequentially detached from the first carrier plate 10 three times, and the second carrier plate 20 is moved three times sequentially from the areas R1 and R2. , R3 takes over the 30 die D that fell off from the first carrier board 10 .

Although the above-mentioned movement of the second carrier plate 20 makes the distance between two adjacent die D at the junction of the adjacent areas R1 and R2 equal to the distance between two adjacent die D in the area R1 or R2, the present invention does not do this. Specific restrictions. In another embodiment of the present invention, the second carrier plate 20 can also be moved so that the distance between two adjacent die D at the junction of the adjacent areas R1 and R2 is greater than the distance between two adjacent die D in the area R1 or R2. In yet another embodiment, the distance between two adjacent crystal grains D at the junction of the adjacent regions R1 and R2 can also be made smaller than the distance between two adjacent crystal grains D in the region R1 or R2.

In this embodiment, the light beam 41 is provided by a light source 40, where the light source 40 may include a laser. However, in other embodiments, the light source 40 can be replaced by other high-energy light sources 40, and the present invention does not limit the type of the light source 40. In addition, the light source 40 may further include a beam shaping element (not shown) to shape the beam 41 . The beam shaping element is, for example, a diffractive optical element (DOE), but is not limited thereto.

In addition, the above-mentioned step of sequentially irradiating the die D located in the transfer area 11 with the light beam 41 is, for example, moving the first carrier 10 so that the die D located in the transfer area 11 is sequentially irradiated with the light beam 41 . Specifically, the first carrier plate 10 can move along the first direction X and/or the second direction Y, for example. In another embodiment, the first carrier plate 10 may not move, but the irradiation position of the light beam 41 may be changed. In addition, the second carrier plate 20 moves, for example, along the first direction X and/or the second direction Y, so that the area of the second carrier plate 20 that is intended to receive the die D moves to a position that can receive the die D.

It is worth mentioning that in order to improve the overall transfer efficiency, the moving speeds of the first carrier board 10 and the second carrier board 20 can be different. For example, when the die D in the transfer area 11 of the first carrier board 10 completes the first transfer and continues the second transfer, the first carrier board 10 to be transferred for the second time must be When the die D moves to the light path of the irradiation area 41a, and the die D to be transferred for the second time is aligned with the area R2 of the second carrier 20 to receive the die D, the second carrier 20 The moving distance of , for example, is a distance of 15 die D, which is greater than the moving distance of the first carrier 10 , for example, a distance of 1 die D. If the first carrier plate 10 and the second carrier plate 20 are to be moved to the position at the same time, the moving speed of the second carrier plate 20 can be made greater than the moving speed of the first carrier plate 10 . However, the present invention does not limit the moving speed of the second carrier board 20 to be greater than the moving speed of the first carrier board 10 . In another embodiment, the second The movement speed of the carrier board 20 may be smaller than the movement speed of the first carrier board 10 . In yet another embodiment, the moving speed of the second carrier board 20 may be equal to the moving speed of the first carrier board 10 .

Continuing with the aforementioned FIGS. 6 and 7 , after the die transfer in the transfer area 11 is completed, steps S1 and S2 can be repeated to complete the entire die transfer process. 8 and 9 are respectively a top view of a first carrier plate and a second carrier plate in another die transfer process according to an embodiment of the present invention. Please refer to FIGS. 2 , 5 , 8 and 9 . After completing the grain transfer in the transfer area 11 following the aforementioned FIGS. 6 and 7 , another transfer area, such as the transfer area 12 , is then selected. For example, another reselected transfer area 12 is not adjacent to the previously selected transfer area 11 to improve the effect of grain mixing. In this embodiment, the transfer area 12 has, for example, 9 rows and 4 columns, a total of 36 die D, and a mask pattern unit 32 matching the number of die D in the transfer area 12 is selected as the processing unit. After that, the light-transmitting pattern P of the mask pattern unit 32 is aligned with the corresponding irradiation area 41 a on the transfer area 12 and the die D on the transfer area 12 on the first carrier 10 , and at the same time with the second carrier 20 The area to receive die D is aligned with R4, for example. Then, as mentioned above, the processing beam 41 is passed through the six light-transmitting patterns P of the mask pattern unit 32, so that the six dies D in the transfer area 12 are irradiated by the irradiation block 41a and then fall off from the first carrier 10 and transferred to, for example, region R4 of the second carrier board 20 . Repeat the above steps two more times, so that the irradiation block 41a sequentially irradiates the 18 die D located in the transfer area 12 three times in total. The 18 die D are sequentially detached from the first carrier 10 three times and moved. The second carrier board 20 sequentially receives the 18 dies D dropped from the first carrier board 10 from the regions R4, R5, and R6 in three times.

Continuing with the aforementioned FIGS. 8 and 9 , after the die transfer in the transfer area 12 is completed, steps S1 and S2 can be repeated to complete the entire die transfer process. 10 and 11 are respectively a top view of a first carrier plate and a second carrier plate in another die transfer process according to an embodiment of the present invention. Please refer to Figures 2, 5, 10 and 11. After completing the grain transfer in the transfer area 12 following the aforementioned Figures 8 and 9, another transfer area is selected, such as the transfer area 13, where The area 13 has, for example, 3 rows and 4 columns, a total of 12 die D, and a mask pattern unit 33 matching the number of die D in the transfer area 13 is selected as a processing unit. Next, the light-transmitting pattern P of the mask pattern unit 33 is placed in the corresponding irradiation area 41 a of the transfer area 13 It is aligned with the die D in the transfer area 13 on the first carrier 10 and at the same time, it is aligned with the area of the second carrier 20 to receive the die D, such as R7. Then, as mentioned above, the processing beam 41 is passed through the two light-transmitting patterns P of the mask pattern unit 33, so that the two dies D in the transfer area 13 are irradiated by the irradiation block 41a and then fall off from the first carrier 10 and transferred to, for example, region R7 of the second carrier board 20 . Repeat the above steps two more times, so that the irradiation block 41a sequentially irradiates the six die D located in the transfer area 13 three times in total. The six die D are sequentially detached from the first carrier 10 three times and moved. The second carrier board 20 sequentially receives the six dies D that have fallen off from the first carrier board 10 from the regions R7, R8, and R9 in three steps.

Although the above figures 6, 8 and 10 show that three transfer areas 11, 12 and 13 are selected for transfer on the first carrier board 10, in another embodiment of the present invention, three transfer areas 11, 12 and 13 can be selected on the first carrier board 10. Multiple transfer areas are used to transfer the die D, and different transfer areas may partially overlap, for example. An appropriate mask pattern unit is selected corresponding to the position and size of the transfer area, which is not specifically limited by the present invention.

The die transfer method in this embodiment is to select the transfer area on the first carrier plate and select an appropriate mask pattern as the processing unit. This can not only achieve the effect of die mixing, but also improve the transfer efficiency. and transfer rate. Therefore, when the grain transfer method of the embodiment of the present invention is applied to the manufacture of a micro-light-emitting diode display device, the overall brightness of the micro-light-emitting diode display device can be made consistent and the manufacturing efficiency can be improved.

Figure 12 is a schematic top view of the first carrier board according to another embodiment of the present invention. Please refer to FIG. 3, FIG. 4 and FIG. 12. In another embodiment of the present invention, the above-mentioned die transfer method includes, for example, adjusting the overall distribution profile of the plurality of die D transferred to the second carrier 20 to the plurality of die transfer methods. The overall distribution profile of each die D before the transfer on the first carrier 10a is the same or different. In FIGS. 3 and 4 , it is taken as an example that the overall distribution profiles of the grains D of the second carrier 20 and the first carrier 10 are different (circular and square respectively). In another embodiment in which the die transfer is performed in conjunction with FIG. 4 and FIG. 12 , the overall distribution profile of the die D on the first carrier 10 a is the same as the overall distribution profile of the die D on the second carrier 20 . For example, in this embodiment, the overall distribution profile of the grains D of the first carrier 10a in Figure 12 is different from that of the second carrier 20 in Figure 3 The overall distribution profile of the die D is, for example, square, that is, the overall distribution profile of the die D of the first carrier 10 a and the second carrier 20 is the same. In addition, although the overall distribution profiles of the grains D of the first carrier 10a and the second carrier 20 shown in this embodiment are both square, the embodiment of the present invention is not limited thereto. The overall distribution profile of the crystal grains D of the first carrier plate 10a and the overall distribution profile of the crystal grains D of the second carrier plate 20 may include shapes other than circles and squares.

Since the die transfer method of this embodiment may include changing the overall distribution profile of the die D when the die D is transferred from the first carrier 10 to the second carrier 20 , such that the die on the second carrier 20 The overall distribution profile of D can be adjusted according to needs.

The row spacing A2 and column spacing B2 of the light-transmitting pattern P in the above embodiment are larger than the row spacing A1 and column spacing B1 of the plurality of dies D on the first carrier 10 , for example. However, the light-transmitting pattern P of the present invention is The distance may also be equal to the distance between two adjacent dies D on the first carrier 10 . FIG. 13 is a schematic top view of a mask pattern unit according to another embodiment of the present invention. Referring to FIG. 13 , the row spacing A2 and column spacing B2 between two adjacent light-transmitting patterns P of the photomask 30 a are equal to the row spacing A1 and column spacing B1 between two adjacent dies D on the first carrier 10 . Although both the row spacing A2 and the column spacing B2 of the above-mentioned light-transmitting pattern P are simultaneously greater than or equal to the row spacing A1 and column spacing B1 between two adjacent dies D on the first carrier 10 , this is not specified in the present invention. limit. In another embodiment of the present invention, the row spacing A2 of the light-transmitting pattern P is, for example, equal to the row spacing A1 between two adjacent die D, but the column pitch B2 of the light-transmitting pattern P is, for example, greater than the distance between two adjacent die D. The column distance is B1. In another embodiment of the present invention, the row spacing A2 of the light-transmitting pattern P is, for example, greater than the row spacing A1 between two adjacent die D, but the column spacing B2 of the light-transmitting pattern P is, for example, equal to the distance between two adjacent die D. The column distance is B1.

In summary, the die transfer method of the embodiment of the present invention is to select the transfer area on the first carrier plate and select an appropriate mask pattern as the processing unit. This not only achieves the effect of die mixing, but also Improve transfer efficiency and transfer rate. Therefore, when the grain transfer method of the embodiment of the present invention is applied to the manufacture of a micro-light-emitting diode display device, the micro-light-emitting diode display device can be The overall brightness tends to be consistent and manufacturing efficiency can be improved. In addition, during the grain transfer, the overall grain distribution profile of the second carrier can be adjusted as required, and the adjustment of the overall grain distribution profile can be performed simultaneously with grain mixing.

Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the appended patent application scope.

S1, S2: steps

Claims (6)

A die transfer method suitable for transferring multiple die on a first carrier to a second carrier. The die transfer method includes: selecting a transfer on the first carrier. area, and select one from a plurality of mask pattern units as a processing unit, each of the mask pattern units includes a plurality of light-transmitting patterns arranged in M rows and N columns, and the M of any of the mask pattern units The value of N is at least one different from the values of M and N of the other photomask pattern units, and the row spacing and column spacing of the light-transmitting patterns are greater than or equal to the row spacing of the die on the first carrier board. and column spacing; and provide a processing light beam to illuminate the transfer area through the light-transmitting patterns of the processing unit, so that the die located in the transfer area are transferred to the second carrier plate, and the transfer area is The overall distribution profile of the die transferred to the second carrier is the same as or different from the overall distribution profile of the die transferred to the first carrier. The die transfer method of claim 1, wherein the step of transferring the die located in the transfer area to the second carrier includes: placing the second carrier on the first carrier below, with the die on the first carrier facing the second carrier; and sequentially irradiating the die in the transfer area with the processing beam, so that the die in the transfer area The dies are dropped off from the first carrier plate in sequence, and the second carrier plate is moved to receive the dice dropped off from the first carrier plate in sequence. The die transfer method as described in claim 2, wherein the step of sequentially irradiating the die located in the transfer area with the processing beam includes: moving the first carrier plate so that the die located in the transfer area Some dies are irradiated by the processing beam in sequence. The die transfer method of claim 3, wherein the moving speed of the second carrier plate is greater than, less than, or equal to the moving speed of the first carrier plate. The die transfer method according to claim 3, wherein: the step of moving the first carrier includes moving the first carrier along a first direction and/or a second direction; moving the second carrier The step includes moving the second carrier plate along the first direction and/or the second direction. The die transfer method as described in claim 1, wherein after the die located in the transfer area are transferred to the second carrier, a new selection is made on the first carrier that is different from the transfer area. Another adjacent transfer area.