TWI872659B - Die implant method - Google Patents

Abstract

A die implant method suitable for implanting multiple die vacancies in a first die array of a first carrier is provided. The die implant method includes: placing a second carrier having a second die array above the first carrier, aligning multiple second columns of the second die array with multiple first columns of the first die array, wherein the second die array includes multiple dies. The die implant method also includes: making the first carrier and the second carrier move relatively in a column direction. During the process of moving the first carrier and the second carrier relatively, when any dies overlap with any die vacancies, the dies overlapping the die vacancies are released from the second carrier and drop to the die vacancies. The die implant method of the present invention can increase the utilization rate of dies and implanting efficiency of dies during die implant.

Description

Grain filling method

The present invention relates to a filling method, in particular to a grain filling method.

When there are defective dies on the substrate that carries the die, it is necessary to go through a process to remove the defective dies and then perform die filling to make sure there are no vacancies on the substrate. The conventional die filling method is to align the filling carrier with the substrate up and down, and then transfer the dies on the filling carrier that correspond to the vacancies to the substrate.

However, after the filling process, although there are still many grains on the filling carrier, there are grain vacancies between these grains. Therefore, when the next grain filling process is performed, if the grain vacancies of the substrate to be filled correspond to the grain vacancies of the filling carrier, they cannot be filled. The substrate and the filling carrier need to be moved relative to each other and then realigned so that the grain vacancies of the substrate are aligned with the grains on the filling carrier. This will increase the time cost of the grain filling process. In addition, in order to reduce the probability that the grain vacancies of the substrate correspond to the grain vacancies of the filling carrier, new filling carriers need to be replaced frequently, thereby limiting the efficiency of grain use of the filling carrier.

The present invention provides a grain filling method, which can improve the grain utilization rate and grain filling efficiency during grain filling.

The grain filling method provided by the present invention is suitable for filling multiple grain vacancies of a first grain array of a first carrier. The grain filling method includes: placing a second carrier having a second grain array above the first carrier, aligning multiple second rows of the second grain array with multiple first rows of the first grain array, wherein the second grain array includes multiple grains; and moving the first carrier and the second carrier relative to each other in the row direction. During the relative movement, when any multiple grains overlap with any multiple grain vacancies, the grains overlapping the grain vacancies are dropped from the second carrier to the grain vacancies.

In one embodiment of the present invention, the step of moving the first carrier and the second carrier relative to each other in the row direction includes moving the first carrier and the second carrier.

In one embodiment of the present invention, the step of moving the first carrier and the second carrier relative to each other in the row direction includes moving one of the first carrier and the second carrier.

In one embodiment of the present invention, the step of causing the die overlapping the die vacancy to drop from the second carrier to the die vacancy includes providing a processing beam to irradiate the die overlapping the die vacancy.

In one embodiment of the present invention, the step of providing a processing beam to irradiate the grains overlapping the grain vacancies includes: providing a Gaussian beam by a laser light source, adjusting the energy distribution of the Gaussian beam into a processing beam with a flat-top distribution through a beam shaping element; and irradiating the processing beam to the grains overlapping the grain vacancies by a scanning galvanometer module.

In one embodiment of the present invention, the step of providing a processing beam to irradiate the die overlapping the die vacancies further includes: irradiating the processing beam to a scanning galvanometer module via a light guiding element.

In one embodiment of the present invention, the laser light source is a semiconductor-pumped solid-state laser (DPSS Laser) light source.

The die filling method of the present invention performs die filling during the relative movement of the first carrier and the second carrier, so that the die in each row on the second carrier used for filling can be used in sequence, thereby improving the die utilization rate and die filling efficiency during die filling.

In order to make the above and other purposes, features and advantages of the present invention more clearly understood, embodiments are specifically cited below and described in detail with reference to the accompanying drawings.

The above-mentioned other technical contents, features and effects of the present invention will be clearly presented in the detailed description of the preferred embodiment with reference to the following drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and are not used to limit the present invention.

FIG1 is a schematic flow chart of a grain filling method according to an embodiment of the present invention. FIG2 is a schematic top view of the alignment of a first carrier and a second carrier in a row direction according to an embodiment of the present invention. Referring to FIG1 and FIG2 , the grain filling method according to the present embodiment is suitable for filling a plurality of grain vacancies P of a first grain array 111 of a first carrier 110, and the grain filling method comprises the following steps. Step S1: Place a second carrier 120 having a second grain array 121 above a first carrier 110 having a first grain array 111, so that a plurality of second rows 122 of the second grain array 121 are aligned with a plurality of first rows 112 of the first grain array 111, wherein the second grain array 121 comprises a plurality of grains G. In one embodiment, when the second rows 122 of the second die array 121 are aligned with the first rows 112 of the first die array 111 , the second rows 122 of the second die array 121 and the first rows 112 of the first die array 111 do not overlap or partially overlap, for example.

Specifically, the first die array 111 of the first carrier 110 of the present embodiment includes, for example, die G1 arranged in 28 rows and 13 columns, wherein the first die array 111 includes, for example, 32 die vacancies P, and these die vacancies P are located between the die G1. The second die array 121 of the second carrier 120 of the present embodiment includes, for example, die G arranged in 10 rows and 13 columns. It should be noted that, although the die G of the second carrier 120 in FIG. 2 is shown with solid lines, the die G is located on the side of the second carrier 120 facing the first carrier 110. In addition, the number of the first row 112 of the present embodiment is, for example, the same as the number of the second row 122, for example, both are 13, so that the first row 112 of the first die array 111 can correspond one-to-one to the second row 122 of the second die array 121. In another embodiment, the number of the first row 112 may be greater or less than the number of the second row 122. In the embodiment where the number of the first row 112 is greater than the number of the second row 122, the die filling method of this embodiment may be repeated to complete the filling of the die vacancies P of the entire first carrier 110.

Next, please refer to step S2: the first carrier 110 and the second carrier 120 are moved relative to each other in the column direction X. During the relative movement, when any grain G overlaps with any grain vacancy P, the grain G overlapping with the grain vacancy P is made to fall from the second carrier 120 to the grain vacancy P. The step of making the grain G overlapping with the grain vacancy P fall from the second carrier 120 to the grain vacancy P includes, for example, providing a processing light beam L1 to irradiate the grain G overlapping with the grain vacancy P. FIG. 3A to FIG. 3D are partial process schematic diagrams of the relative movement of the first carrier and the second carrier in step S2, and FIG. 4 is a processing schematic diagram corresponding to FIG. 3A. Please refer to FIG. 3A and FIG. 4 first. In this embodiment, the rows of the first carrier 110 are, for example, the 1st row to the 28th row arranged in sequence from left to right, and the rows of the second carrier 120 are, for example, the 1st row to the 10th row arranged in sequence from right to left. When the first carrier 110 and the second carrier 120 move relative to each other along the column direction X so that the die G in the first row of the second carrier 120 overlaps with the die vacancies P in the first row of the first carrier 110, since the 13 first columns 112 of the first carrier 110 correspond to the 13 second columns 122 of the second carrier 120, for example, two die vacancies P in the first row of the first carrier 110 overlap with two die G in the first row of the second carrier 120. At this time, the processing light beam L1 irradiates the two die G overlapping with the two die vacancies P, so that the two die G fall from the second carrier 120 to the two die vacancies P in the first carrier 110. In this embodiment, the processing light beam L1 can be designed to irradiate the two die G at the same time or one by one. In addition, during the irradiation, the first carrier 110 and the second carrier 120 can be designed to temporarily stop moving or to continue moving according to the needs. On the other hand, the above-mentioned determination of whether the grain vacancy P and the grain G overlap is performed by, for example, taking images of the first carrier 110 and the second carrier 120 by an image detection element (not shown in the figure), and then irradiating the processing light beam L1 to the grain G overlapping with the grain vacancy P according to the above-mentioned image determination.

Please refer to FIG3B and FIG4. After the two grain vacancies P in the first row of the first carrier 110 are filled, when the first carrier 110 and the second carrier 120 are relatively moved along the column direction X to overlap the two grains G in the second row of the first carrier 110, the processing light beam L1 irradiates the two grains G overlapping with the grain vacancies P, so that the two grains G fall from the second carrier 120 onto the two grain vacancies P.

According to the aforementioned die filling method, the die vacancies P of the first carrier 110 are filled in sequence. Although the die vacancies P in the same row of the first carrier 110 are overlapped to the die G in the same row of the second carrier 120 in FIG. 3A and FIG. 3B for filling, it is also possible to fill when the die vacancies P in different rows are overlapped to the die G in different rows of the second carrier 120 at the same time. Please refer to Figures 3C and 4. When the first carrier 110 and the second carrier 120 move relative to each other along the column direction X to the position shown in Figure 3C, the 4 grain vacancies P in the 19th and 21st rows of the first carrier 110 overlap with the 4 grains G in the 2nd and 4th rows of the second carrier 120, respectively. Therefore, the processing light beam L1 can be irradiated to the 4 grains corresponding to the grain vacancies P, so that the 4 grains G fall from the second carrier 120 to the 4 grain vacancies P.

When the first carrier 110 and the second carrier 120 move relative to each other along the row direction X to the position shown in FIG. 3D , for example, all the die vacancies P of the first carrier 110 are filled, and the number of the die G of each second row 122 of the second carrier 120 is reduced according to the number of the die vacancies P of each first row 112 of the corresponding first carrier 110. In this way, there will be no die vacancies between the remaining die G on the second carrier 120, so when the second carrier 120 is applied to other die filling processes, the filling efficiency will not be affected by the die vacancies. Compared with the prior art, the die filling method of this embodiment can increase the use efficiency of the die G of the second carrier 120.

In this embodiment, the step of moving the first carrier 110 and the second carrier 120 relative to each other in the column direction X is, for example, moving both the first carrier 110 and the second carrier 120, but the present invention is not limited thereto. In other embodiments, one of the first carrier 110 and the second carrier 120 may be moved.

Specifically, the step of providing the processing beam L1 to irradiate the grain G overlapping the grain vacancy P includes, for example, providing the Gaussian beam L2 by the laser light source 130, adjusting the energy distribution of the Gaussian beam L2 into the processing beam L1 with a flat-top distribution by the beam shaping element 140, and then irradiating the processing beam L1 to the grain G overlapping the grain vacancy P by the scanning galvanometer module 160. The scanning galvanometer module 160, for example, swings within a predetermined angle range through two galvanometers 161 and 162 having different swing axes, so that the processing beam L1 is irradiated at different positions within a preset working range. In other words, the position where the grain G on the second carrier 120 overlaps the grain vacancy P on the first carrier 110 is within the working range of the scanning galvanometer module 160. The scanning galvanometer module 160 further includes a projection lens 163, which is suitable for irradiating the processing light beam L1 to the die G. In addition, the laser light source 130 is, for example, a semiconductor pumped solid-state laser (DPSS Laser) light source, but the present invention is not limited thereto. A light guiding element 150 can be arranged between the beam shaping element 140 and the scanning galvanometer module 160. The beam shaping element 140 is used to adjust the energy distribution of the Gaussian beam L2 into a processing light beam L1 with a flat-top distribution, which helps to separate the die G from the second carrier 120. The light guiding element 150 guides the processing light beam L1 to the scanning galvanometer module 160. In FIG. 4, the light guiding element 150 is, for example, a reflective element, and the number is, for example, 2, but the present invention does not limit the type and number of the light guiding element 150. For example, a mask 170 is further included between the beam shaping element 140 and the light guiding element 150 for adjusting the shape of the light spot formed when the processing beam L1 irradiates the grain G. The mask 170 can be a movable mask with multiple patterns (not shown), and different patterns can be selected according to usage requirements.

In this embodiment, the second carrier 120 can be a wafer substrate, a relay substrate or other carrier that carries the grain G. The first carrier 110 can be a relay substrate, a temporary substrate (Temporary), a driving substrate or other carrier that carries the grain G1. Each of the grains G1 and G carried by the first carrier 110 and the second carrier 120 is, for example, a micro grain, and its length, width, and thickness are, for example, less than 100μm, and can even be less than 50μm, for example, less than 10μm, but not limited to this. The grains G1 and G can also be larger-sized grains, for example, with a length, width, and thickness of approximately 100 to 1000μm. In addition, the above-mentioned micro grains can be micro light-emitting diodes (Micro LEDs), but the present invention is not limited to this.

The present invention adopts a grain filling method, so the grain utilization rate and grain filling efficiency during grain filling can be improved.

Although the second carrier 120 used in the die filling process in this embodiment may be, for example, a second carrier 120 without die vacancies (as shown in FIG. 2 ), or a second carrier 120 having die vacancies after the die filling process (as shown in FIG. 3D ), wherein the die vacancies P of the second carrier 120 in FIG. 3D are arranged in sequence. Both of the above-mentioned second carriers 120 may be applied to other die filling processes, but the present invention is not limited thereto. In another embodiment, a second carrier having randomly distributed die vacancies P may also be used in the die filling process.

FIG5 is a top view schematic diagram of the first carrier and the second carrier aligned in the row direction in another embodiment of the present invention. Referring to FIG5, the grain filling method of this embodiment is similar to that of the previous embodiment, and the main difference is that the second carrier 120a used for the grain filling process of this embodiment has, for example, randomly distributed grain vacancies P located between grains G, while the second carrier 120 of the previous embodiment (such as FIG3A to FIG3D) has, for example, no grain vacancies P or has sequentially arranged grain vacancies P. FIG6A to FIG6B are partial process schematic diagrams of the relative movement of the first carrier and the second carrier in another embodiment of step S2. Please refer to FIG. 6A . When the first carrier 110 and the second carrier 120a of the present embodiment complete step S1 and proceed to step S2, since the grain vacancies P on the second carrier 120a are randomly distributed, for example, the grain vacancies P on the second carrier 120a may overlap with the grain vacancies P on the first carrier 110 (such as the position indicated by the arrow P in FIG. 6A ), wherein the positions of the grain vacancies P on the second carrier 120a can be detected, for example, by using the image captured by the aforementioned image detection element (not shown).

Specifically, two die vacancies P on the first row of the first carrier 110 overlap one die G and one die vacancies P on the first row of the second carrier 120a, for example, respectively, so that in FIG6A , for example, only one die G on the first row of the second carrier 120a falls into the die vacancies P of the first carrier 110. Next, please refer to FIG6B , when the first carrier 110 and the second carrier 120a move relative to each other in the row direction X (as shown in FIG4 ) to the position shown in FIG6B , when the die G on the second row of the second carrier 120a overlaps the die vacancies P on the first row of the first carrier 110, the processing light beam L1 irradiates the die G overlapping the die vacancies P, so that the die G overlapping the die vacancies P falls from the second carrier 120a into the die vacancies P. Therefore, the second carrier 120a with randomly distributed die vacancies P can still be used for the die filling process. According to the aforementioned die filling method, the second carrier 120a can be used to sequentially fill the die vacancies P of the first carrier 110.

Although the present invention has been disclosed as above by way of embodiments, they are not intended to limit the present invention. A person having ordinary knowledge in the technical field to which the present invention belongs may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the attached patent application.

110: First carrier 111: First array of crystals 112: First row 120, 120a: Second carrier 121: Second array of crystals 122: Second row 130: Laser source 140: Beam shaping element 150: Light guide element 160: Scanning galvanometer module 161, 162: Galvanometer 163: Projection lens 170: Mask L1: Processing beam L2: Gaussian beam G, G1: Crystals P: Crystal vacancy S1, S2: Steps X: Column direction

FIG. 1 is a schematic diagram of the process of the grain filling method of an embodiment of the present invention. FIG. 2 is a schematic diagram of the top view of the first carrier and the second carrier aligned in the column direction in an embodiment of the present invention. FIG. 3A to FIG. 3D are schematic diagrams of the local process of the relative movement of the first carrier and the second carrier in step S2. FIG. 4 is a processing schematic diagram corresponding to FIG. 3A. FIG. 5 is a schematic diagram of the top view of the first carrier and the second carrier aligned in the column direction in another embodiment of the present invention. FIG. 6A to FIG. 6B are schematic diagrams of the local process of the relative movement of the first carrier and the second carrier in step S2 in another embodiment.

S1, S2: Steps

Claims (7)

A grain filling method is suitable for filling multiple grain vacancies of a first grain array of a first carrier, and the grain filling method includes: Placing a second carrier having a second grain array above the first carrier, aligning multiple second rows of the second grain array with multiple first rows of the first grain array, wherein the second grain array includes multiple grains; and Moving the first carrier and the second carrier relative to each other in a row direction, during the relative movement, when any of the grains overlaps with any of the grain vacancies, causing the grain overlapping the grain vacancies to fall from the second carrier to the grain vacancies. The die filling method as described in claim 1, wherein the step of moving the first carrier and the second carrier relative to each other in the row direction includes moving the first carrier and the second carrier. The die filling method as described in claim 1, wherein the step of moving the first carrier and the second carrier relative to each other in the row direction includes moving one of the first carrier and the second carrier. In the die filling method as described in claim 1, the step of causing the die overlapping the die vacancy to fall from the second carrier to the die vacancy includes providing a processing beam to irradiate the die overlapping the die vacancy. The grain filling method as described in claim 4, wherein the step of providing the processing beam to irradiate the grain overlapping the grain vacancy includes: Providing a Gaussian beam by a laser light source, adjusting the energy distribution of the Gaussian beam into a processing beam with a flat-top distribution through a beam shaping element; and Irradiating the processing beam to the grain overlapping the grain vacancy by a scanning galvanometer module. The die filling method as described in claim 5, wherein the step of providing the processing beam to illuminate the die overlapping the die vacancy further includes: Irradiating the processing beam to the scanning galvanometer module via a light guiding element. A grain filling method as described in claim 5, wherein the laser light source is a semiconductor-pumped solid-state laser light source.

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