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TWI820525B - Vapor chamber lid and manufacturing method thereof - Google Patents

Vapor chamber lid and manufacturing method thereof Download PDF

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Publication number
TWI820525B
TWI820525B TW110144280A TW110144280A TWI820525B TW I820525 B TWI820525 B TW I820525B TW 110144280 A TW110144280 A TW 110144280A TW 110144280 A TW110144280 A TW 110144280A TW I820525 B TWI820525 B TW I820525B
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Taiwan
Prior art keywords
plate
frame
heat dissipation
dissipation space
vapor chamber
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TW110144280A
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Chinese (zh)
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TW202322681A (en
Inventor
葉竣達
郭晉宏
王博立
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健策精密工業股份有限公司
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Priority to TW110144280A priority Critical patent/TWI820525B/en
Priority to CN202211160282.2A priority patent/CN116193800A/en
Priority to US18/045,469 priority patent/US12495525B2/en
Publication of TW202322681A publication Critical patent/TW202322681A/en
Application granted granted Critical
Publication of TWI820525B publication Critical patent/TWI820525B/en
Priority to US18/793,970 priority patent/US20240397668A1/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/20Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2039Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0283Means for filling or sealing heat pipes
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • F28D15/046Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
    • H10W40/73
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2275/00Fastening; Joining
    • F28F2275/06Fastening; Joining by welding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Telephone Function (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The present disclosure is related to a vapor chamber lid. The vapor chamber lid includes a base plate and a top plate. The base plate includes a plate body, a frame, a plurality of supporting pillars and a chip accommodating portion. The frame surrounds the plate body to define a cooling space. The cooling space is configured to accommodate a working fluid. The supporting pillars are located in the cooling space. The chip accommodating portion is located on the plate body of the base plate and is facing away from the cooling space. The top plate is located on the frame of the base plate to seal the cooling space. An external sidewall of the frame of the base plate is coplanar with an external sidewall of the top plate.

Description

晶片均溫板及其製造方法Wafer vapor chamber and manufacturing method thereof

本揭露係關於一種晶片均溫板及一種晶片均溫板的製造方法。The present disclosure relates to a wafer vapor chamber and a method for manufacturing the wafer vapor chamber.

隨著電子產品在功能上的提升,電子產品內處理器的散熱需求也變得越來越高,因而使得均溫板的應用也變得越來越普及。然而,傳統的均溫板將用於填充工作流體的管體設置在其本體的一端。當均溫板發生碰撞時,裸露的管體容易產生破裂與洩漏內部工作流體之風險。此外,隨著電子產品內處理器外形特徵的改變,均溫板的外觀結構也需做出變化,否則均溫板將無法完全覆蓋處理器,造成均溫板的散熱效果不佳。As the functions of electronic products improve, the heat dissipation requirements of processors in electronic products are becoming higher and higher, so the application of vapor chambers is becoming more and more popular. However, the traditional vapor chamber has a tube body for filling the working fluid disposed at one end of its body. When the vapor chamber collides, the exposed pipe body is prone to rupture and leakage of the internal working fluid. In addition, as the appearance characteristics of processors in electronic products change, the appearance structure of the vapor chamber also needs to be changed. Otherwise, the vapor chamber will not be able to completely cover the processor, resulting in poor heat dissipation effect of the vapor chamber.

本揭露之一技術態樣為一種晶片均溫板。One technical aspect of the present disclosure is a wafer vapor chamber.

根據本揭露一實施方式,一種晶片均溫板包括底板以及頂板。底板包括板體、邊框、複數個支撐柱以及晶片容置部。邊框圍繞板體以定義出散熱空間。散熱空間配置以容置工作流體。支撐柱位於散熱空間中。晶片容置部位於底板的板體上且背對散熱空間。頂板位於底板的邊框上以密封散熱空間。底板的邊框的外側壁與頂板的外側壁共平面。According to an embodiment of the present disclosure, a wafer vapor chamber includes a bottom plate and a top plate. The base plate includes a plate body, a frame, a plurality of support pillars and a chip accommodating part. A frame surrounds the board to define a space for heat dissipation. The heat dissipation space is configured to accommodate the working fluid. The support column is located in the heat dissipation space. The chip accommodating part is located on the plate body of the base plate and faces away from the heat dissipation space. The top plate sits on the frame of the bottom plate to seal the heat dissipation space. The outer side wall of the bottom plate frame is coplanar with the outer side wall of the top plate.

在本揭露一實施方式中,上述底板的邊框的外側壁無連通於散熱空間的管體從其延伸而出。In an embodiment of the present disclosure, no tube connected to the heat dissipation space extends from the outer side wall of the frame of the base plate.

在本揭露一實施方式中,上述底板的邊框的整個外側壁與頂板的外側壁完全重疊。In an embodiment of the present disclosure, the entire outer side wall of the frame of the bottom panel completely overlaps the outer side wall of the top panel.

在本揭露一實施方式中,上述邊框的周圍與頂板的周圍具有相同的輪廓。In an embodiment of the present disclosure, the periphery of the frame and the periphery of the top plate have the same outline.

在本揭露一實施方式中,上述邊框具有凸部。邊框的外側壁位於頂板的外側壁與邊框的凸部之間。In an embodiment of the present disclosure, the frame has a convex portion. The outer side wall of the frame is located between the outer side wall of the top plate and the convex portion of the frame.

在本揭露一實施方式中,上述底板的邊框的外側壁與頂板的外側壁各具有一凹部,且兩凹部重疊。In an embodiment of the present disclosure, the outer side walls of the frame of the bottom panel and the outer side walls of the top panel each have a recessed portion, and the two recessed portions overlap.

在本揭露一實施方式中,上述底板的邊框的凹部位於底板的相鄰兩角落之間,頂板的凹部位於頂板的相鄰兩角落之間。In an embodiment of the present disclosure, the recessed portion of the frame of the bottom plate is located between two adjacent corners of the bottom plate, and the recessed portion of the top plate is located between two adjacent corners of the top plate.

在本揭露一實施方式中,上述支撐柱彼此分開,且邊框圍繞支撐柱。In an embodiment of the present disclosure, the above-mentioned support columns are separated from each other, and the frame surrounds the support columns.

在本揭露一實施方式中,上述支撐柱、板體以及邊框為一體成型結構。In an embodiment of the present disclosure, the above-mentioned support column, plate body and frame are an integrally formed structure.

在本揭露一實施方式中,上述晶片均溫板還包括第一結構板以及第二結構板。第一結構板位於散熱空間中。支撐柱的底部由第一結構板圍繞。第一結構板包括複數個第一毛細結構。第一毛細結構朝向頂板。第二結構板位於散熱空間中。支撐柱的頂部由第二結構板圍繞。第二結構板包括複數個第二毛細結構。第二毛細結構朝向底板的板體。In an embodiment of the present disclosure, the above-mentioned wafer vapor chamber further includes a first structural plate and a second structural plate. The first structural panel is located in the heat dissipation space. The bottom of the support column is surrounded by the first structural plate. The first structural plate includes a plurality of first capillary structures. The first capillary structure faces the top plate. The second structural panel is located in the heat dissipation space. The top of the support column is surrounded by a second structural panel. The second structural plate includes a plurality of second capillary structures. The second capillary structure faces the plate body of the bottom plate.

本揭露之另一技術態樣為一種晶片均溫板的製造方法。Another technical aspect of the present disclosure is a method for manufacturing a wafer vapor chamber.

根據本揭露一實施方式,一種晶片均溫板的製造方法包括:形成底板,其中底板包括板體、邊框以及複數個支撐柱,邊框圍繞板體以定義出散熱空間,散熱空間配置以容置工作流體;在底板的邊框上形成穿過邊框的通孔;在邊框上設置頂板,其中底板的邊框的外側壁與頂板的外側壁共平面;封閉並壓合通孔,以密封散熱空間;以及在底板的板體上形成晶片容置部,其中晶片容置部背對散熱空間。According to an embodiment of the present disclosure, a method for manufacturing a wafer vapor chamber includes: forming a base plate, wherein the base plate includes a plate body, a frame and a plurality of support columns, the frame surrounds the plate body to define a heat dissipation space, and the heat dissipation space is configured to accommodate work fluid; forming a through hole passing through the frame on the frame of the base plate; providing a top plate on the frame, wherein the outer side wall of the frame of the base plate is coplanar with the outer side wall of the top plate; closing and pressing the through hole to seal the heat dissipation space; and A chip accommodating portion is formed on the base plate, wherein the chip accommodating portion faces away from the heat dissipation space.

在本揭露一實施方式中,上述通孔是以電阻銲接、超音波銲接或高週波銲接的方式壓合。In an embodiment of the present disclosure, the above-mentioned through holes are pressed together by resistance welding, ultrasonic welding or high frequency welding.

在本揭露一實施方式中,上述方法還包括:在邊框背對散熱空間之一側設置連通於通孔與散熱空間的管體;經由管體與通孔填充工作流體到散熱空間中;以及切除管體。In an embodiment of the present disclosure, the above method further includes: arranging a tube connected to the through hole and the heat dissipation space on a side of the frame facing away from the heat dissipation space; filling the working fluid into the heat dissipation space through the tube body and the through hole; and cutting off tube body.

在本揭露一實施方式中,上述方法還包括在邊框上形成凸部,使邊框的外側壁位於頂板的外側壁與邊框的凸部之間。In an embodiment of the present disclosure, the above method further includes forming a convex portion on the frame so that the outer side wall of the frame is located between the outer side wall of the top plate and the convex portion of the frame.

在本揭露一實施方式中,上述在底板的板體上形成晶片容置部係使用化學機械平坦化、銑銷、沖壓或蝕刻。In an embodiment of the present disclosure, chemical mechanical planarization, milling, stamping or etching are used to form the wafer accommodating portion on the plate body of the base plate.

在本揭露一實施方式中,上述方法還包括在底板的邊框的外側壁與頂板的外側壁上各形成一凹部,其中兩凹部重疊。In an embodiment of the present disclosure, the above method further includes forming a recessed portion on each of the outer side walls of the frame of the bottom panel and the outer side wall of the top panel, wherein the two recessed portions overlap.

在本揭露一實施方式中,上述方法還包括:設置第一結構板,其中支撐柱的底部由第一結構板圍繞,第一結構板包括複數個第一毛細結構,第一毛細結構朝向頂板;以及設置第二結構板,其中支撐柱的頂部由第二結構板圍繞,第二結構板包括複數個第二毛細結構,第二毛細結構朝向底板的板體。In an embodiment of the present disclosure, the above method further includes: arranging a first structural plate, wherein the bottom of the support column is surrounded by the first structural plate, the first structural plate includes a plurality of first capillary structures, and the first capillary structures face the top plate; And a second structural plate is provided, wherein the top of the support column is surrounded by the second structural plate, the second structural plate includes a plurality of second capillary structures, and the second capillary structures face the plate body of the bottom plate.

在本揭露上述實施方式中,晶片均溫板的底板的邊框的外側壁與頂板的外側壁共平面,也就是說,底板的邊框上並無連通於散熱空間的管體從其延伸而出。由於晶片均溫板的底板的邊框上不具有管體,從而避免了裸露的管體受到碰撞產生破裂之機會,也降低了因管體破裂而導致散熱空間中的工作流體洩漏的風險。In the above embodiments of the present disclosure, the outer side walls of the bottom frame of the wafer vapor chamber are coplanar with the outer side walls of the top plate. That is to say, there is no tube extending from the frame of the bottom plate that is connected to the heat dissipation space. Since there is no tube body on the frame of the bottom plate of the wafer vapor chamber, the chance of the exposed tube body being broken due to collision is avoided, and the risk of leakage of the working fluid in the heat dissipation space due to tube body rupture is also reduced.

以下揭示之實施方式內容提供了用於實施所提供的標的之不同特徵的許多不同實施方式,或實例。下文描述了元件和佈置之特定實例以簡化本案。當然,該等實例僅為實例且並不意欲作為限制。此外,本案可在各個實例中重複元件符號及/或字母。此重複係用於簡便和清晰的目的,且其本身不指定所論述的各個實施方式及/或配置之間的關係。The following disclosure of embodiments provides many different implementations, or examples, for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present application. Of course, these examples are examples only and are not intended to be limiting. Additionally, reference symbols and/or letters may be repeated in each instance. This repetition is for simplicity and clarity and does not by itself specify a relationship between the various embodiments and/or configurations discussed.

諸如「在……下方」、「在……之下」、「下部」、「在……之上」、「上部」等等空間相對術語可在本文中為了便於描述之目的而使用,以描述如附圖中所示之一個元件或特徵與另一元件或特徵之關係。空間相對術語意欲涵蓋除了附圖中所示的定向之外的在使用或操作中的裝置的不同定向。裝置可經其他方式定向(旋轉90度或以其他定向)並且本文所使用的空間相對描述詞可同樣相應地解釋。Spatially relative terms such as “below,” “below,” “lower,” “above,” “upper,” and the like may be used herein for convenience of description, to describe The relationship of one element or feature to another element or feature is illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation illustrated in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

第1圖繪示根據本揭露一實施方式之晶片均溫板100的立體圖。第2圖繪示第1圖的晶片均溫板100沿線段2-2的剖面圖。同時參照第1圖與第2圖,晶片均溫板100包括底板110以及頂板120。底板110包括板體112、邊框114、複數個支撐柱116以及晶片容置部S2。板體112具有頂面113以及相對於頂面113的底面。邊框114圍繞板體112與支撐柱116以定義出散熱空間S1。此外,邊框114的底側(例如背對頂板120的一側)可具有黏合面,以將晶片均溫板100黏合於基板(圖未示)上。散熱空間S1配置以容置工作流體。舉例來說,工作流體可為水,但並不以此為限。支撐柱116位於散熱空間S1中且彼此分開。在一些實施方式中,晶片容置部S2位於底板110的板體112上且背對散熱空間S1。晶片容置部S2配置以容置晶片(圖未示),以把晶片在運作時所產生的熱能帶走。此外,晶片容置部S2可根據不同晶片的尺寸及厚度在外觀上具有變化,以提供客製化效果並使晶片可完全容置於其中。Figure 1 is a perspective view of a wafer vapor chamber 100 according to an embodiment of the present disclosure. Figure 2 shows a cross-sectional view along line 2-2 of the wafer vapor chamber 100 in Figure 1 . Referring to FIGS. 1 and 2 simultaneously, the wafer vapor chamber 100 includes a bottom plate 110 and a top plate 120 . The base plate 110 includes a plate body 112, a frame 114, a plurality of support pillars 116, and a chip accommodating portion S2. The plate body 112 has a top surface 113 and a bottom surface opposite to the top surface 113 . The frame 114 surrounds the plate body 112 and the support column 116 to define a heat dissipation space S1. In addition, the bottom side of the frame 114 (eg, the side facing away from the top plate 120 ) may have an adhesive surface to adhere the wafer vapor chamber 100 to the substrate (not shown). The heat dissipation space S1 is configured to accommodate the working fluid. For example, the working fluid can be water, but is not limited thereto. The support pillars 116 are located in the heat dissipation space S1 and are separated from each other. In some embodiments, the chip accommodating portion S2 is located on the plate body 112 of the base plate 110 and faces away from the heat dissipation space S1. The chip accommodating part S2 is configured to accommodate a chip (not shown) to take away the heat energy generated by the chip during operation. In addition, the chip receiving portion S2 can change in appearance according to the size and thickness of different chips to provide a customized effect and allow the chip to be completely accommodated therein.

頂板120位於底板110的邊框114上,以密封散熱空間S1。值得注意的是,底板110的邊框114的外側壁111與頂板120的外側壁121共平面。底板110的邊框114的周圍與頂板120的周圍具有相同的輪廓。在本實施方式中,底板110的邊框114的外側壁111無連通於散熱空間S1的管體從其延伸而出,且底板110的邊框114的外側壁111與頂板120的外側壁121完全重疊。The top plate 120 is located on the frame 114 of the bottom plate 110 to seal the heat dissipation space S1. It is worth noting that the outer side wall 111 of the frame 114 of the bottom plate 110 is coplanar with the outer side wall 121 of the top plate 120 . The periphery of the frame 114 of the bottom panel 110 has the same contour as the periphery of the top panel 120 . In this embodiment, no tube extending from the outer wall 111 of the frame 114 of the bottom plate 110 connected to the heat dissipation space S1 completely overlaps with the outer wall 121 of the top plate 120 .

具體而言,由於晶片均溫板100的底板110的邊框114的外側壁111與頂板120的外側壁121共平面,也就是說,底板110的邊框114上並無連通於散熱空間S1的管體從其延伸而出,從而避免了裸露的管體受到碰撞產生破裂之機會,也降低了因管體破裂而導致散熱空間S1中的工作流體洩漏的風險。除此之外,支撐柱116、邊框114與板體112係為一體成型結構,因此底板110具有良好的結構強度。如此一來,當晶片均溫板100運作時,晶片均溫板100因受熱而變形甚至損壞的機率能夠有效降低,使得晶片均溫板100的作業表現及工作壽命得以有效提升。Specifically, since the outer side wall 111 of the frame 114 of the bottom plate 110 of the wafer vapor chamber 100 is coplanar with the outer side wall 121 of the top plate 120 , that is to say, there is no tube connected to the heat dissipation space S1 on the frame 114 of the bottom plate 110 Extending from it, this avoids the chance of the exposed pipe body being ruptured due to collision, and also reduces the risk of leakage of the working fluid in the heat dissipation space S1 due to the rupture of the pipe body. In addition, the support column 116, the frame 114 and the plate body 112 are an integrally formed structure, so the bottom plate 110 has good structural strength. In this way, when the wafer vapor chamber 100 is operating, the probability of the wafer vapor chamber 100 being deformed or even damaged due to heat can be effectively reduced, so that the operating performance and working life of the wafer vapor chamber 100 can be effectively improved.

第3圖繪示第1圖的晶片均溫板100的爆炸圖。同時參照第2圖與第3圖,晶片均溫板100還包括第一結構板130以及第二結構板140。第一結構板130位於散熱空間S1中。支撐柱116的底部116a由第一結構板130圍繞。第一結構板130包括複數個第一毛細結構132。第一毛細結構132朝向頂板120。第二結構板140位於散熱空間S1中。支撐柱116的頂部116b由第二結構板140圍繞。第二結構板140包括複數個第二毛細結構142。第二毛細結構142朝向底板110的板體112。Figure 3 shows an exploded view of the wafer vapor chamber 100 of Figure 1 . Referring to FIGS. 2 and 3 simultaneously, the wafer vapor chamber 100 further includes a first structural plate 130 and a second structural plate 140 . The first structural plate 130 is located in the heat dissipation space S1. The bottom 116a of the support column 116 is surrounded by the first structural plate 130. The first structural plate 130 includes a plurality of first capillary structures 132 . The first capillary structure 132 faces the top plate 120 . The second structural plate 140 is located in the heat dissipation space S1. The top 116b of the support column 116 is surrounded by a second structural panel 140. The second structural plate 140 includes a plurality of second capillary structures 142 . The second capillary structure 142 faces the plate body 112 of the bottom plate 110 .

根據實際應用情況,第一結構板130的第一毛細結構132與第二結構板140的第二毛細結構142可為微小的凸出結構、凹陷結構或網狀結構等,但並不以此為限。舉例來說,當晶片均溫板100運作時,容置於散熱空間S1中的工作流體會藉由反覆蒸發與凝結以改變其相位,從而提供散熱效果。第一結構板130的第一毛細結構132與第二結構板140的第二毛細結構142係配置以提高工作流體於散熱空間S1中蒸發與凝結的效率。According to actual application conditions, the first capillary structure 132 of the first structural plate 130 and the second capillary structure 142 of the second structural plate 140 can be tiny protruding structures, concave structures or mesh structures, etc., but this is not the case. limit. For example, when the wafer vapor chamber 100 is operating, the working fluid contained in the heat dissipation space S1 will change its phase by repeatedly evaporating and condensing, thereby providing a heat dissipation effect. The first capillary structure 132 of the first structural plate 130 and the second capillary structure 142 of the second structural plate 140 are configured to improve the efficiency of evaporation and condensation of the working fluid in the heat dissipation space S1.

應理解到,已敘述的元件連接關係與功效將不重覆贅述,合先敘明。在以下敘述中,將說明其他形式的晶片均溫板。It should be understood that the connection relationships and functions of the components that have been described will not be repeated and will be explained first. In the following description, other forms of wafer vapor chambers will be described.

第4A圖繪示根據本揭露另一實施方式之晶片均溫板100a的立體圖。第4B圖繪示第4A圖的晶片均溫板100a沿線段4B-4B的剖面圖。同時參照第4A圖與第4B圖,晶片均溫板100a的底板110的板體112上具有晶片容置部S2,且晶片容置部S2背對散熱空間S1。晶片容置部S2可把晶片在運作時所產生的熱能帶走。第4A圖所示之實施方式與第1圖所示之實施方式不同地方在於,晶片均溫板100a的底板110的邊框114具有凸部115。底板110的邊框114的外側壁111位於頂板120的外側壁121與邊框114的凸部115之間。舉例來說,晶片均溫板100a的底板110的邊框114的凸部115可與扣合機構(圖未示)相互抵接,以提供固定效果。Figure 4A illustrates a perspective view of a wafer vapor chamber 100a according to another embodiment of the present disclosure. Figure 4B illustrates a cross-sectional view along line segment 4B-4B of the wafer vapor chamber 100a of Figure 4A. Referring to Figures 4A and 4B simultaneously, the plate body 112 of the bottom plate 110 of the wafer vapor chamber 100a has a wafer accommodating portion S2, and the wafer accommodating portion S2 faces away from the heat dissipation space S1. The chip accommodating part S2 can take away the heat energy generated by the chip during operation. The difference between the embodiment shown in FIG. 4A and the embodiment shown in FIG. 1 is that the frame 114 of the bottom plate 110 of the wafer vapor chamber 100 a has a convex portion 115 . The outer side wall 111 of the frame 114 of the bottom panel 110 is located between the outer side wall 121 of the top panel 120 and the convex portion 115 of the frame 114 . For example, the convex portion 115 of the frame 114 of the bottom plate 110 of the wafer vapor chamber 100a can abut against a locking mechanism (not shown) to provide a fixing effect.

第5圖繪示根據本揭露又一實施方式之晶片均溫板100b的立體圖。雖然圖未示,但晶片均溫板100b的底板110上可具有如第2圖所示之晶片容置部S2。晶片容置部S2可把晶片在運作時所產生的熱能帶走。與第1圖之實施方式不同地方在於,晶片均溫板100b的底板110的邊框114的外側壁111與頂板120的外側壁121分別具有凹部117以及凹部127。底板110的邊框114的凹部117與頂板120的凹部127重疊。底板110的邊框114的凹部117位於底板110的相鄰兩角落之間。頂板120的凹部127位於頂板120的相鄰兩角落之間。Figure 5 illustrates a perspective view of a wafer vapor chamber 100b according to yet another embodiment of the present disclosure. Although not shown in the figure, the bottom plate 110 of the wafer vapor chamber 100b may have a wafer accommodating portion S2 as shown in FIG. 2 . The chip accommodating part S2 can take away the heat energy generated by the chip during operation. The difference from the embodiment in FIG. 1 is that the outer side wall 111 of the frame 114 of the bottom plate 110 of the wafer vapor chamber 100 b and the outer side wall 121 of the top plate 120 have recesses 117 and 127 respectively. The recess 117 of the frame 114 of the bottom plate 110 overlaps the recess 127 of the top plate 120 . The recess 117 of the frame 114 of the bottom plate 110 is located between two adjacent corners of the bottom plate 110 . The recess 127 of the top plate 120 is located between two adjacent corners of the top plate 120 .

在以下敘述中,將說明晶片均溫板的製造方法。In the following description, a method of manufacturing the wafer vapor chamber will be explained.

第6圖繪示根據本揭露一實施方式之晶片均溫板的製造方法的流程圖。晶片均溫板的製造方法包括下列步驟。首先在步驟500中,形成底板,其中底板包括板體、邊框以及支撐柱,邊框圍繞板體以定義出散熱空間,散熱空間配置以容置工作流體。接著在步驟600中,在底板的邊框上形成穿過邊框的通孔。接著在步驟700中,在邊框上設置頂板,其中底板的邊框的外側壁與頂板的外側壁共平面。之後在步驟800中,封閉並壓合通孔,以密封散熱空間。接著在步驟900中,在底板的板體上形成晶片容置部,其中晶片容置部背對散熱空間。在以下敘述中,將詳細說明上述各步驟。FIG. 6 illustrates a flow chart of a method for manufacturing a wafer vapor chamber according to an embodiment of the present disclosure. The manufacturing method of the wafer vapor chamber includes the following steps. First, in step 500, a base plate is formed, where the base plate includes a plate body, a frame, and a support column. The frame surrounds the plate body to define a heat dissipation space, and the heat dissipation space is configured to accommodate the working fluid. Next, in step 600, a through hole passing through the frame is formed on the frame of the base plate. Next, in step 700, a top plate is set on the frame, wherein the outer side wall of the frame of the bottom plate is coplanar with the outer side wall of the top plate. Then in step 800, the through holes are closed and pressed to seal the heat dissipation space. Next, in step 900, a wafer accommodating portion is formed on the plate body of the base plate, wherein the wafer accommodating portion faces away from the heat dissipation space. In the following description, each of the above steps will be explained in detail.

第7圖繪示根據本揭露一實施方式之底板110與頂板120尚未組裝的示意圖。第8圖繪示第7圖的底板110與頂板120組裝後的示意圖。同時參照第7圖與第8圖,形成底板110,其中底板110包括板體112、邊框114以及支撐柱116。邊框114圍繞板體112以定義出散熱空間S1。散熱空間S1配置以容置工作流體。舉例來說,工作流體可為水,但並不以此為限。在本實施方式中,支撐柱116、邊框114與板體112為一體成型結構,因此底板110具有良好的結構強度。如此一來,當晶片均溫板100運作時,晶片均溫板100因受熱而變形甚至損壞的機率能夠有效降低,使得晶片均溫板100的作業表現及工作壽命得以有效提升。在形成底板110後,在底板110的邊框114上形成穿過邊框114的通孔H。FIG. 7 shows a schematic diagram of the base plate 110 and the top plate 120 before being assembled according to an embodiment of the present disclosure. FIG. 8 shows a schematic diagram of the bottom plate 110 and the top plate 120 of FIG. 7 after assembly. Referring to FIGS. 7 and 8 simultaneously, a base plate 110 is formed, where the base plate 110 includes a plate body 112 , a frame 114 and a support column 116 . The frame 114 surrounds the board body 112 to define a heat dissipation space S1. The heat dissipation space S1 is configured to accommodate the working fluid. For example, the working fluid can be water, but is not limited thereto. In this embodiment, the support column 116, the frame 114 and the plate body 112 are integrally formed, so the bottom plate 110 has good structural strength. In this way, when the wafer vapor chamber 100 is operating, the probability of the wafer vapor chamber 100 being deformed or even damaged due to heat can be effectively reduced, so that the operating performance and working life of the wafer vapor chamber 100 can be effectively improved. After the base plate 110 is formed, a through hole H passing through the frame 114 is formed on the frame 114 of the base plate 110 .

接著,同時參照第2圖、第7圖以及第8圖,製造方法還包括:設置第一結構板130,其中支撐柱116的底部116a由第一結構板130圍繞,第一結構板130包括第一毛細結構132,第一毛細結構132朝向頂板120;以及設置第二結構板140,其中支撐柱116的頂部116b由第二結構板140圍繞,第二結構板140包括第二毛細結構142,第二毛細結構142朝向底板110的板體112。Next, referring to Figures 2, 7 and 8 simultaneously, the manufacturing method further includes: setting a first structural plate 130, wherein the bottom 116a of the support column 116 is surrounded by the first structural plate 130, and the first structural plate 130 includes a first structural plate 130. a capillary structure 132, the first capillary structure 132 facing the top plate 120; and a second structural plate 140 is provided, wherein the top 116b of the support column 116 is surrounded by the second structural plate 140, the second structural plate 140 includes the second capillary structure 142, The two capillary structures 142 face the plate body 112 of the bottom plate 110 .

接著,在邊框114上設置頂板120以密封散熱空間S1,以形成如第8圖所示之結構。值得注意的是,底板110的邊框114的外側壁111與頂板120的外側壁121共平面。底板110的邊框114的周圍與頂板120的周圍具有相同的輪廓。底板110的外側壁111無連通於散熱空間S1的管體從其延伸而出,且底板110的邊框114的外側壁111與頂板120的外側壁121完全重疊。接著,可經由通孔H對散熱空間S1抽真空,並經由通孔H填充工作流體至散熱空間S1中。將工作流體填充至散熱空間S1中後,封閉並壓合通孔H,以密封散熱空間S1。在本實施方式中,通孔H是以電阻銲接、超音波銲接或高週波銲接的方式壓合。Next, a top plate 120 is disposed on the frame 114 to seal the heat dissipation space S1 to form a structure as shown in FIG. 8 . It is worth noting that the outer side wall 111 of the frame 114 of the bottom plate 110 is coplanar with the outer side wall 121 of the top plate 120 . The periphery of the frame 114 of the bottom panel 110 has the same contour as the periphery of the top panel 120 . The outer side wall 111 of the bottom plate 110 has no tube extending from it that is connected to the heat dissipation space S1, and the outer side wall 111 of the frame 114 of the bottom plate 110 completely overlaps the outer side wall 121 of the top plate 120. Then, the heat dissipation space S1 can be evacuated through the through hole H, and the working fluid can be filled into the heat dissipation space S1 through the through hole H. After the working fluid is filled into the heat dissipation space S1, the through hole H is closed and pressed to seal the heat dissipation space S1. In this embodiment, the through hole H is pressed by resistance welding, ultrasonic welding or high frequency welding.

接著,製造方法還包括在底板110的板體112上形成晶片容置部S2。晶片容置部S2背對散熱空間S1。舉例來說,形成晶片容置部S2可使用化學機械平坦化、銑銷、沖壓或蝕刻等方式。此外,可根據不同晶片的尺寸及厚度形成晶片容置部S2,以提供客製化效果,並使晶片可完全容置於晶片容置部S2中。Next, the manufacturing method further includes forming the wafer accommodating portion S2 on the plate body 112 of the base plate 110 . The chip accommodating part S2 faces away from the heat dissipation space S1. For example, chemical mechanical planarization, milling, stamping or etching may be used to form the wafer accommodating portion S2. In addition, the chip accommodating portion S2 can be formed according to the size and thickness of different chips to provide a customized effect and enable the chip to be completely accommodated in the chip accommodating portion S2.

第9圖繪示根據本揭露另一實施方式之底板110與頂板120尚未組裝的示意圖。第10圖繪示第9圖的底板110與頂板120組裝後的示意圖。同時參照第9圖與第10圖,第9圖所示之實施方式與第8圖所示之實施方式不同地方在於,製造方法還包括在底板110的邊框114背對散熱空間S1之一側設置管體150。管體150具有連通於通孔H與散熱空間S1的開口。開口暴露於底板110外。在設置管體150後,可經由管體150的開口對散熱空間S1抽真空,並經由管體150與通孔H填充工作流體至散熱空間S1中。在將工作流體填充至散熱空間S1後,封閉並壓合通孔H,以密封散熱空間S1。在壓合通孔H後,切除管體150,並在底板110的板體112上形成如第2圖所示之晶片容置部S2。晶片容置部S2背對散熱空間S1。FIG. 9 illustrates a schematic diagram of the base plate 110 and the top plate 120 before being assembled according to another embodiment of the present disclosure. Figure 10 shows a schematic diagram of the bottom plate 110 and the top plate 120 of Figure 9 after assembly. Referring to Figures 9 and 10 at the same time, the difference between the embodiment shown in Figure 9 and the embodiment shown in Figure 8 is that the manufacturing method also includes disposing a side of the frame 114 of the base plate 110 facing away from the heat dissipation space S1 Tube body 150. The tube body 150 has an opening communicating with the through hole H and the heat dissipation space S1. The opening is exposed outside the bottom plate 110 . After the tube body 150 is installed, the heat dissipation space S1 can be evacuated through the opening of the tube body 150 , and the working fluid can be filled into the heat dissipation space S1 through the tube body 150 and the through hole H. After the working fluid is filled into the heat dissipation space S1, the through hole H is closed and pressed to seal the heat dissipation space S1. After the through hole H is pressed, the tube body 150 is cut off, and a chip receiving portion S2 as shown in FIG. 2 is formed on the plate body 112 of the bottom plate 110 . The chip accommodating part S2 faces away from the heat dissipation space S1.

請參照第4A圖以及第4B圖,製造方法還包括:在底板110的邊框114上形成凸部115,使邊框114的外側壁111位於頂板120的外側壁121與邊框114的凸部115之間。如此一來,晶片均溫板100a具有不同於第1圖之晶片均溫板100的外觀。詳細來說,晶片均溫板100a的邊框114具有段差,且晶片均溫板100a的底板110的邊框114的凸部115可與扣合機構(圖未示)相互抵接,以提供固定效果。Referring to Figures 4A and 4B, the manufacturing method also includes: forming a protrusion 115 on the frame 114 of the bottom plate 110, so that the outer wall 111 of the frame 114 is located between the outer wall 121 of the top plate 120 and the protrusion 115 of the frame 114. . As a result, the wafer vapor chamber 100a has an appearance different from the wafer vapor chamber 100 in FIG. 1 . Specifically, the frame 114 of the wafer vapor chamber 100a has a step difference, and the convex portion 115 of the frame 114 of the bottom plate 110 of the wafer vapor chamber 100a can abut with the buckling mechanism (not shown) to provide a fixing effect.

請參照第5圖,製造方法還包括在底板110的邊框114的外側壁111與頂板120的外側壁121上分別形成凹部117以及凹部127。底板110的邊框114的凹部117位於底板110的相鄰兩角落之間。頂板120的凹部127位於頂板120的相鄰兩角落之間。底板110的邊框114的凹部117與頂板120的凹部127重疊。如此一來,晶片均溫板100b具有不同於第1圖之晶片均溫板100的外觀,以達到客製化效果。Referring to FIG. 5 , the manufacturing method also includes forming recesses 117 and 127 on the outer side wall 111 of the frame 114 of the bottom plate 110 and the outer side wall 121 of the top plate 120 respectively. The recess 117 of the frame 114 of the bottom plate 110 is located between two adjacent corners of the bottom plate 110 . The recess 127 of the top plate 120 is located between two adjacent corners of the top plate 120 . The recess 117 of the frame 114 of the bottom plate 110 overlaps the recess 127 of the top plate 120 . In this way, the wafer vapor chamber 100b has a different appearance from the wafer vapor chamber 100 in Figure 1 to achieve a customized effect.

綜上所述,晶片均溫板的底板的邊框的外側壁與頂板的外側壁共平面,也就是說,底板的邊框上並無連通於散熱空間的管體從其延伸而出。由於晶片均溫板的底板的邊框上不具有管體,從而避免了裸露的管體受到碰撞產生破裂之機會,也降低了因管體破裂而導致散熱空間中的工作流體洩漏的風險。To sum up, the outer wall of the frame of the bottom plate of the wafer vapor chamber is coplanar with the outer wall of the top plate. That is to say, there is no tube connected to the heat dissipation space extending from the frame of the base plate. Since there is no tube body on the frame of the bottom plate of the wafer vapor chamber, the chance of the exposed tube body being broken due to collision is avoided, and the risk of leakage of the working fluid in the heat dissipation space due to tube body rupture is also reduced.

前述概述了幾個實施方式的特徵,使得本領域技術人員可以更好地理解本揭露的態樣。本領域技術人員應當理解,他們可以容易地將本揭露用作設計或修改其他過程和結構的基礎,以實現與本文介紹的實施方式相同的目的和/或實現相同的優點。本領域技術人員還應該認識到,這樣的等效構造不脫離本揭露的精神和範圍,並且在不脫離本揭露的精神和範圍的情況下,它們可以在這裡進行各種改變,替換和變更。The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can be variously changed, substituted, and altered herein without departing from the spirit and scope of the present disclosure.

100:晶片均溫板 100a:晶片均溫板 100b:晶片均溫板 110:底板 111:外側壁 112:板體 113:頂面 114:邊框 115:凸部 116:支撐柱 116a:底部 116b:頂部 117:凹部 120:頂板 121:外側壁 123:頂面 127:凹部 130:第一結構板 132:第一毛細結構 140:第二結構板 142:第二毛細結構 150:管體 500:步驟 600:步驟 700:步驟 800:步驟 900:步驟 H:通孔 S1:散熱空間 S2:晶片容置部 2-2:線段 4B-4B:線段 100: Wafer vapor chamber 100a: Wafer vapor chamber 100b: Wafer vapor chamber 110: Bottom plate 111:Outside wall 112:Plate body 113:Top surface 114:Border 115:convex part 116:Support column 116a: bottom 116b:Top 117: concave part 120:top plate 121:Outside wall 123:Top surface 127: concave part 130:First structural plate 132: First capillary structure 140:Second structural plate 142: Second capillary structure 150:tube body 500: steps 600: Steps 700: Steps 800: Step 900: steps H:Through hole S1: heat dissipation space S2: Chip accommodating part 2-2: Line segment 4B-4B: line segment

當結合隨附諸圖閱讀時,得自以下詳細描述最佳地理解本揭露之一實施方式。應強調,根據工業上之標準實務,各種特徵並未按比例繪製且僅用於說明目的。事實上,為了論述清楚,可任意地增大或減小各種特徵之尺寸。 第1圖繪示根據本揭露一實施方式之晶片均溫板的立體圖。 第2圖繪示第1圖的晶片均溫板沿線段2-2的剖面圖。 第3圖繪示第1圖的晶片均溫板的爆炸圖。 第4A圖繪示根據本揭露另一實施方式之晶片均溫板的立體圖。 第4B圖繪示第4A圖的晶片均溫板沿線段4B-4B的剖面圖。 第5圖繪示根據本揭露又一實施方式之晶片均溫板的立體圖。 第6圖繪示根據本揭露一實施方式之晶片均溫板的製造方法的流程圖。 第7圖繪示根據本揭露一實施方式之底板與頂板尚未組裝的示意圖。 第8圖繪示第7圖的底板與頂板組裝後的示意圖。 第9圖繪示根據本揭露另一實施方式之底板與頂板尚未組裝的示意圖。 第10圖繪示第9圖的底板與頂板組裝後的示意圖。 One embodiment of the present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It is emphasized that, in accordance with standard industry practice, various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. Figure 1 is a perspective view of a chip vapor chamber according to an embodiment of the present disclosure. Figure 2 shows a cross-sectional view along line 2-2 of the wafer vapor chamber in Figure 1 . Figure 3 shows an exploded view of the wafer vapor chamber in Figure 1 . Figure 4A is a perspective view of a wafer vapor chamber according to another embodiment of the present disclosure. Figure 4B illustrates a cross-sectional view along line 4B-4B of the wafer vapor chamber in Figure 4A. Figure 5 is a perspective view of a chip vapor chamber according to another embodiment of the present disclosure. FIG. 6 illustrates a flow chart of a method for manufacturing a wafer vapor chamber according to an embodiment of the present disclosure. FIG. 7 is a schematic diagram of the base plate and the top plate before being assembled according to an embodiment of the present disclosure. Figure 8 shows a schematic diagram of the bottom plate and top plate of Figure 7 after assembly. FIG. 9 is a schematic diagram of the base plate and the top plate before being assembled according to another embodiment of the present disclosure. Figure 10 shows a schematic diagram of the bottom plate and top plate of Figure 9 after assembly.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without

100:晶片均溫板 100: Wafer vapor chamber

110:底板 110: Bottom plate

111:外側壁 111:Outside wall

120:頂板 120:top plate

121:外側壁 121:Outside wall

123:頂面 123:Top surface

2-2:線段 2-2: Line segment

Claims (17)

一種晶片均溫板,包含:一底板,包含:一板體;一邊框,圍繞該板體以定義出一散熱空間及一晶片容置部,其中該散熱空間配置以容置一工作流體,該晶片容置部位於該板體背對該散熱空間的一側;以及複數個支撐柱,位於該散熱空間中;以及一頂板,位於該底板的該邊框上以密封該散熱空間,其中該底板的該邊框的一外側壁與該頂板的一外側壁共平面,其中該底板的該外側壁具有一第一部分與相鄰於該第一部分的一第二部分,該第一部分較該第二部分靠近該頂板,該底板的該外側壁的該第一部分之整體與該頂板的該外側壁之整體彼此對齊,該邊框從該頂板的一底面延伸至超過該板體的一底面的位置,使得該散熱空間與該晶片容置部皆由該邊框圍繞。 A wafer vapor chamber, including: a bottom plate, including: a plate body; a frame surrounding the plate body to define a heat dissipation space and a wafer accommodating part, wherein the heat dissipation space is configured to accommodate a working fluid, the The chip accommodating part is located on the side of the plate body facing away from the heat dissipation space; and a plurality of support pillars are located in the heat dissipation space; and a top plate is located on the frame of the bottom plate to seal the heat dissipation space, wherein the bottom plate An outer side wall of the frame is coplanar with an outer side wall of the top plate, wherein the outer side wall of the bottom plate has a first part and a second part adjacent to the first part, and the first part is closer to the second part than the second part. The top plate, the entire first part of the outer side wall of the bottom plate and the entire outer side wall of the top plate are aligned with each other, and the frame extends from a bottom surface of the top plate to a position beyond a bottom surface of the plate body, so that the heat dissipation space and the chip accommodating part are surrounded by the frame. 如請求項1所述之晶片均溫板,其中該底板的該邊框的外側壁無連通於該散熱空間的管體從其延伸而出。 The wafer vapor chamber according to claim 1, wherein no tube connected to the heat dissipation space extends from the outer wall of the frame of the base plate. 如請求項1所述之晶片均溫板,其中該邊框的該外側壁與該頂板的外側壁完全重疊。 The wafer vapor chamber according to claim 1, wherein the outer side wall of the frame completely overlaps the outer side wall of the top plate. 如請求項1所述之晶片均溫板,其中該邊框的周圍與該頂板的周圍具有相同的輪廓。 The wafer vapor chamber according to claim 1, wherein the periphery of the frame and the periphery of the top plate have the same outline. 如請求項1所述之晶片均溫板,其中該邊框具有一凸部,且該邊框的該外側壁位於該頂板的該外側壁與該邊框的該凸部之間。 The wafer vapor chamber according to claim 1, wherein the frame has a convex portion, and the outer wall of the frame is located between the outer wall of the top plate and the convex portion of the frame. 如請求項1所述之晶片均溫板,其中該底板的該邊框的該外側壁與該頂板的外側壁各具有一凹部,且該兩凹部重疊。 The wafer vapor chamber according to claim 1, wherein the outer side wall of the frame of the bottom plate and the outer side wall of the top plate each have a recess, and the two recesses overlap. 如請求項6所述之晶片均溫板,其中該底板的該邊框的該凹部位於該底板的相鄰兩角落之間,該頂板的該凹部位於該頂板的相鄰兩角落之間。 The wafer vapor chamber according to claim 6, wherein the recessed portion of the frame of the bottom plate is located between two adjacent corners of the bottom plate, and the recessed portion of the top plate is located between two adjacent corners of the top plate. 如請求項1所述之晶片均溫板,其中該些支撐柱彼此分開,且該邊框圍繞該些支撐柱。 The wafer vapor chamber according to claim 1, wherein the support pillars are separated from each other, and the frame surrounds the support pillars. 如請求項1所述之晶片均溫板,其中該些支撐柱、該板體以及該邊框為一體成型結構。 The wafer vapor chamber according to claim 1, wherein the support pillars, the plate body and the frame are an integrally formed structure. 如請求項1所述之晶片均溫板,更包含:一第一結構板,位於該散熱空間中,其中該些支撐柱的 底部由該第一結構板圍繞,該第一結構板包含複數個第一毛細結構,該些第一毛細結構朝向該頂板;以及一第二結構板,位於該散熱空間中,其中該些支撐柱的頂部由該第二結構板圍繞,該第二結構板包含複數個第二毛細結構,該些第二毛細結構朝向該底板的該板體。 The chip vapor chamber as described in claim 1 further includes: a first structural plate located in the heat dissipation space, in which the support columns The bottom is surrounded by the first structural plate, which includes a plurality of first wick structures facing the top plate; and a second structural plate located in the heat dissipation space, in which the support columns The top is surrounded by the second structural plate, the second structural plate includes a plurality of second wick structures, and the second wick structures face the plate body of the bottom plate. 一種晶片均溫板的製造方法,包含:形成一底板,其中該底板包含一板體、一邊框以及複數個支撐柱,該邊框圍繞該板體以定義出一散熱空間,該散熱空間配置以容置一工作流體;在該邊框上形成穿過該邊框的一通孔;在該邊框上設置一頂板,其中該底板的該邊框的一外側壁與該頂板的一外側壁共平面;封閉並壓合該通孔,以密封該散熱空間;以及在該底板的該板體上形成一晶片容置部,其中該晶片容置部位於該板體背對該散熱空間的一側,該邊框圍繞該板體以定義出該晶片容置部,且該邊框從該頂板的一底面延伸至超過該板體的一底面的位置,使得該散熱空間與該晶片容置部皆由該邊框圍繞。 A method of manufacturing a wafer vapor chamber, including: forming a bottom plate, wherein the bottom plate includes a plate body, a frame and a plurality of support pillars. The frame surrounds the plate body to define a heat dissipation space. The heat dissipation space is configured to accommodate A working fluid is placed; a through hole is formed on the frame through the frame; a top plate is provided on the frame, wherein an outer side wall of the frame of the bottom plate is coplanar with an outer side wall of the top plate; closed and pressed The through hole is used to seal the heat dissipation space; and a chip accommodating part is formed on the plate body of the base plate, wherein the chip accommodating part is located on the side of the plate body facing away from the heat dissipation space, and the frame surrounds the plate The body is used to define the chip accommodating part, and the frame extends from a bottom surface of the top plate to a position beyond a bottom surface of the plate body, so that the heat dissipation space and the chip accommodating part are both surrounded by the frame. 如請求項11所述之方法,其中該通孔是以電阻銲接、超音波銲接或高週波銲接的方式壓合。 The method of claim 11, wherein the through hole is pressed by resistance welding, ultrasonic welding or high frequency welding. 如請求項11所述之方法,更包含: 在該邊框背對該散熱空間之一側設置連通於該通孔與該散熱空間的一管體;經由該管體與該通孔填充該工作流體到該散熱空間中;以及切除該管體。 The method described in request 11 further includes: A tube connected to the through hole and the heat dissipation space is provided on a side of the frame facing away from the heat dissipation space; the working fluid is filled into the heat dissipation space through the tube and the through hole; and the tube is cut off. 如請求項11所述之方法,更包含:在該邊框上形成一凸部,使該邊框的該外側壁位於該頂板的該外側壁與該邊框的該凸部之間。 The method of claim 11 further includes: forming a convex portion on the frame so that the outer wall of the frame is located between the outer wall of the top plate and the convex portion of the frame. 如請求項11所述之方法,其中在該底板的該板體上形成該晶片容置部係使用化學機械平坦化、銑銷、沖壓或蝕刻。 The method of claim 11, wherein forming the wafer accommodating portion on the plate body of the base plate uses chemical mechanical planarization, milling, stamping or etching. 如請求項11所述之方法,更包含:在該底板的該邊框的該外側壁與該頂板的該外側壁上各形成一凹部,其中該兩凹部重疊。 The method of claim 11, further comprising: forming a recess on each of the outer wall of the frame of the bottom plate and the outer wall of the top plate, wherein the two recesses overlap. 如請求項11所述之方法,更包含:設置一第一結構板,其中該些支撐柱的底部由該第一結構板圍繞,該第一結構板包含複數個第一毛細結構,該些第一毛細結構朝向該頂板;以及設置一第二結構板,其中該些支撐柱的頂部由該第二結構板圍繞,該第二結構板包含複數個第二毛細結構,該些 第二毛細結構朝向該底板的該板體。 The method of claim 11, further comprising: arranging a first structural plate, wherein the bottoms of the support columns are surrounded by the first structural plate, the first structural plate includes a plurality of first capillary structures, and the first structural plate A capillary structure faces the top plate; and a second structural plate is provided, wherein the tops of the support columns are surrounded by the second structural plate, the second structural plate includes a plurality of second capillary structures, the The second capillary structure faces the plate body of the bottom plate.
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