TWI820525B - Vapor chamber lid and manufacturing method thereof - Google Patents
Vapor chamber lid and manufacturing method thereof Download PDFInfo
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- TWI820525B TWI820525B TW110144280A TW110144280A TWI820525B TW I820525 B TWI820525 B TW I820525B TW 110144280 A TW110144280 A TW 110144280A TW 110144280 A TW110144280 A TW 110144280A TW I820525 B TWI820525 B TW I820525B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/0283—Means for filling or sealing heat pipes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
- F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
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- H10W40/73—
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2275/00—Fastening; Joining
- F28F2275/06—Fastening; Joining by welding
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
本揭露係關於一種晶片均溫板及一種晶片均溫板的製造方法。The present disclosure relates to a wafer vapor chamber and a method for manufacturing the wafer vapor chamber.
隨著電子產品在功能上的提升,電子產品內處理器的散熱需求也變得越來越高,因而使得均溫板的應用也變得越來越普及。然而,傳統的均溫板將用於填充工作流體的管體設置在其本體的一端。當均溫板發生碰撞時,裸露的管體容易產生破裂與洩漏內部工作流體之風險。此外,隨著電子產品內處理器外形特徵的改變,均溫板的外觀結構也需做出變化,否則均溫板將無法完全覆蓋處理器,造成均溫板的散熱效果不佳。As the functions of electronic products improve, the heat dissipation requirements of processors in electronic products are becoming higher and higher, so the application of vapor chambers is becoming more and more popular. However, the traditional vapor chamber has a tube body for filling the working fluid disposed at one end of its body. When the vapor chamber collides, the exposed pipe body is prone to rupture and leakage of the internal working fluid. In addition, as the appearance characteristics of processors in electronic products change, the appearance structure of the vapor chamber also needs to be changed. Otherwise, the vapor chamber will not be able to completely cover the processor, resulting in poor heat dissipation effect of the vapor chamber.
本揭露之一技術態樣為一種晶片均溫板。One technical aspect of the present disclosure is a wafer vapor chamber.
根據本揭露一實施方式,一種晶片均溫板包括底板以及頂板。底板包括板體、邊框、複數個支撐柱以及晶片容置部。邊框圍繞板體以定義出散熱空間。散熱空間配置以容置工作流體。支撐柱位於散熱空間中。晶片容置部位於底板的板體上且背對散熱空間。頂板位於底板的邊框上以密封散熱空間。底板的邊框的外側壁與頂板的外側壁共平面。According to an embodiment of the present disclosure, a wafer vapor chamber includes a bottom plate and a top plate. The base plate includes a plate body, a frame, a plurality of support pillars and a chip accommodating part. A frame surrounds the board to define a space for heat dissipation. The heat dissipation space is configured to accommodate the working fluid. The support column is located in the heat dissipation space. The chip accommodating part is located on the plate body of the base plate and faces away from the heat dissipation space. The top plate sits on the frame of the bottom plate to seal the heat dissipation space. The outer side wall of the bottom plate frame is coplanar with the outer side wall of the top plate.
在本揭露一實施方式中,上述底板的邊框的外側壁無連通於散熱空間的管體從其延伸而出。In an embodiment of the present disclosure, no tube connected to the heat dissipation space extends from the outer side wall of the frame of the base plate.
在本揭露一實施方式中,上述底板的邊框的整個外側壁與頂板的外側壁完全重疊。In an embodiment of the present disclosure, the entire outer side wall of the frame of the bottom panel completely overlaps the outer side wall of the top panel.
在本揭露一實施方式中,上述邊框的周圍與頂板的周圍具有相同的輪廓。In an embodiment of the present disclosure, the periphery of the frame and the periphery of the top plate have the same outline.
在本揭露一實施方式中,上述邊框具有凸部。邊框的外側壁位於頂板的外側壁與邊框的凸部之間。In an embodiment of the present disclosure, the frame has a convex portion. The outer side wall of the frame is located between the outer side wall of the top plate and the convex portion of the frame.
在本揭露一實施方式中,上述底板的邊框的外側壁與頂板的外側壁各具有一凹部,且兩凹部重疊。In an embodiment of the present disclosure, the outer side walls of the frame of the bottom panel and the outer side walls of the top panel each have a recessed portion, and the two recessed portions overlap.
在本揭露一實施方式中,上述底板的邊框的凹部位於底板的相鄰兩角落之間,頂板的凹部位於頂板的相鄰兩角落之間。In an embodiment of the present disclosure, the recessed portion of the frame of the bottom plate is located between two adjacent corners of the bottom plate, and the recessed portion of the top plate is located between two adjacent corners of the top plate.
在本揭露一實施方式中,上述支撐柱彼此分開,且邊框圍繞支撐柱。In an embodiment of the present disclosure, the above-mentioned support columns are separated from each other, and the frame surrounds the support columns.
在本揭露一實施方式中,上述支撐柱、板體以及邊框為一體成型結構。In an embodiment of the present disclosure, the above-mentioned support column, plate body and frame are an integrally formed structure.
在本揭露一實施方式中,上述晶片均溫板還包括第一結構板以及第二結構板。第一結構板位於散熱空間中。支撐柱的底部由第一結構板圍繞。第一結構板包括複數個第一毛細結構。第一毛細結構朝向頂板。第二結構板位於散熱空間中。支撐柱的頂部由第二結構板圍繞。第二結構板包括複數個第二毛細結構。第二毛細結構朝向底板的板體。In an embodiment of the present disclosure, the above-mentioned wafer vapor chamber further includes a first structural plate and a second structural plate. The first structural panel is located in the heat dissipation space. The bottom of the support column is surrounded by the first structural plate. The first structural plate includes a plurality of first capillary structures. The first capillary structure faces the top plate. The second structural panel is located in the heat dissipation space. The top of the support column is surrounded by a second structural panel. The second structural plate includes a plurality of second capillary structures. The second capillary structure faces the plate body of the bottom plate.
本揭露之另一技術態樣為一種晶片均溫板的製造方法。Another technical aspect of the present disclosure is a method for manufacturing a wafer vapor chamber.
根據本揭露一實施方式,一種晶片均溫板的製造方法包括:形成底板,其中底板包括板體、邊框以及複數個支撐柱,邊框圍繞板體以定義出散熱空間,散熱空間配置以容置工作流體;在底板的邊框上形成穿過邊框的通孔;在邊框上設置頂板,其中底板的邊框的外側壁與頂板的外側壁共平面;封閉並壓合通孔,以密封散熱空間;以及在底板的板體上形成晶片容置部,其中晶片容置部背對散熱空間。According to an embodiment of the present disclosure, a method for manufacturing a wafer vapor chamber includes: forming a base plate, wherein the base plate includes a plate body, a frame and a plurality of support columns, the frame surrounds the plate body to define a heat dissipation space, and the heat dissipation space is configured to accommodate work fluid; forming a through hole passing through the frame on the frame of the base plate; providing a top plate on the frame, wherein the outer side wall of the frame of the base plate is coplanar with the outer side wall of the top plate; closing and pressing the through hole to seal the heat dissipation space; and A chip accommodating portion is formed on the base plate, wherein the chip accommodating portion faces away from the heat dissipation space.
在本揭露一實施方式中,上述通孔是以電阻銲接、超音波銲接或高週波銲接的方式壓合。In an embodiment of the present disclosure, the above-mentioned through holes are pressed together by resistance welding, ultrasonic welding or high frequency welding.
在本揭露一實施方式中,上述方法還包括:在邊框背對散熱空間之一側設置連通於通孔與散熱空間的管體;經由管體與通孔填充工作流體到散熱空間中;以及切除管體。In an embodiment of the present disclosure, the above method further includes: arranging a tube connected to the through hole and the heat dissipation space on a side of the frame facing away from the heat dissipation space; filling the working fluid into the heat dissipation space through the tube body and the through hole; and cutting off tube body.
在本揭露一實施方式中,上述方法還包括在邊框上形成凸部,使邊框的外側壁位於頂板的外側壁與邊框的凸部之間。In an embodiment of the present disclosure, the above method further includes forming a convex portion on the frame so that the outer side wall of the frame is located between the outer side wall of the top plate and the convex portion of the frame.
在本揭露一實施方式中,上述在底板的板體上形成晶片容置部係使用化學機械平坦化、銑銷、沖壓或蝕刻。In an embodiment of the present disclosure, chemical mechanical planarization, milling, stamping or etching are used to form the wafer accommodating portion on the plate body of the base plate.
在本揭露一實施方式中,上述方法還包括在底板的邊框的外側壁與頂板的外側壁上各形成一凹部,其中兩凹部重疊。In an embodiment of the present disclosure, the above method further includes forming a recessed portion on each of the outer side walls of the frame of the bottom panel and the outer side wall of the top panel, wherein the two recessed portions overlap.
在本揭露一實施方式中,上述方法還包括:設置第一結構板,其中支撐柱的底部由第一結構板圍繞,第一結構板包括複數個第一毛細結構,第一毛細結構朝向頂板;以及設置第二結構板,其中支撐柱的頂部由第二結構板圍繞,第二結構板包括複數個第二毛細結構,第二毛細結構朝向底板的板體。In an embodiment of the present disclosure, the above method further includes: arranging a first structural plate, wherein the bottom of the support column is surrounded by the first structural plate, the first structural plate includes a plurality of first capillary structures, and the first capillary structures face the top plate; And a second structural plate is provided, wherein the top of the support column is surrounded by the second structural plate, the second structural plate includes a plurality of second capillary structures, and the second capillary structures face the plate body of the bottom plate.
在本揭露上述實施方式中,晶片均溫板的底板的邊框的外側壁與頂板的外側壁共平面,也就是說,底板的邊框上並無連通於散熱空間的管體從其延伸而出。由於晶片均溫板的底板的邊框上不具有管體,從而避免了裸露的管體受到碰撞產生破裂之機會,也降低了因管體破裂而導致散熱空間中的工作流體洩漏的風險。In the above embodiments of the present disclosure, the outer side walls of the bottom frame of the wafer vapor chamber are coplanar with the outer side walls of the top plate. That is to say, there is no tube extending from the frame of the bottom plate that is connected to the heat dissipation space. Since there is no tube body on the frame of the bottom plate of the wafer vapor chamber, the chance of the exposed tube body being broken due to collision is avoided, and the risk of leakage of the working fluid in the heat dissipation space due to tube body rupture is also reduced.
以下揭示之實施方式內容提供了用於實施所提供的標的之不同特徵的許多不同實施方式,或實例。下文描述了元件和佈置之特定實例以簡化本案。當然,該等實例僅為實例且並不意欲作為限制。此外,本案可在各個實例中重複元件符號及/或字母。此重複係用於簡便和清晰的目的,且其本身不指定所論述的各個實施方式及/或配置之間的關係。The following disclosure of embodiments provides many different implementations, or examples, for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present application. Of course, these examples are examples only and are not intended to be limiting. Additionally, reference symbols and/or letters may be repeated in each instance. This repetition is for simplicity and clarity and does not by itself specify a relationship between the various embodiments and/or configurations discussed.
諸如「在……下方」、「在……之下」、「下部」、「在……之上」、「上部」等等空間相對術語可在本文中為了便於描述之目的而使用,以描述如附圖中所示之一個元件或特徵與另一元件或特徵之關係。空間相對術語意欲涵蓋除了附圖中所示的定向之外的在使用或操作中的裝置的不同定向。裝置可經其他方式定向(旋轉90度或以其他定向)並且本文所使用的空間相對描述詞可同樣相應地解釋。Spatially relative terms such as “below,” “below,” “lower,” “above,” “upper,” and the like may be used herein for convenience of description, to describe The relationship of one element or feature to another element or feature is illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation illustrated in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
第1圖繪示根據本揭露一實施方式之晶片均溫板100的立體圖。第2圖繪示第1圖的晶片均溫板100沿線段2-2的剖面圖。同時參照第1圖與第2圖,晶片均溫板100包括底板110以及頂板120。底板110包括板體112、邊框114、複數個支撐柱116以及晶片容置部S2。板體112具有頂面113以及相對於頂面113的底面。邊框114圍繞板體112與支撐柱116以定義出散熱空間S1。此外,邊框114的底側(例如背對頂板120的一側)可具有黏合面,以將晶片均溫板100黏合於基板(圖未示)上。散熱空間S1配置以容置工作流體。舉例來說,工作流體可為水,但並不以此為限。支撐柱116位於散熱空間S1中且彼此分開。在一些實施方式中,晶片容置部S2位於底板110的板體112上且背對散熱空間S1。晶片容置部S2配置以容置晶片(圖未示),以把晶片在運作時所產生的熱能帶走。此外,晶片容置部S2可根據不同晶片的尺寸及厚度在外觀上具有變化,以提供客製化效果並使晶片可完全容置於其中。Figure 1 is a perspective view of a
頂板120位於底板110的邊框114上,以密封散熱空間S1。值得注意的是,底板110的邊框114的外側壁111與頂板120的外側壁121共平面。底板110的邊框114的周圍與頂板120的周圍具有相同的輪廓。在本實施方式中,底板110的邊框114的外側壁111無連通於散熱空間S1的管體從其延伸而出,且底板110的邊框114的外側壁111與頂板120的外側壁121完全重疊。The
具體而言,由於晶片均溫板100的底板110的邊框114的外側壁111與頂板120的外側壁121共平面,也就是說,底板110的邊框114上並無連通於散熱空間S1的管體從其延伸而出,從而避免了裸露的管體受到碰撞產生破裂之機會,也降低了因管體破裂而導致散熱空間S1中的工作流體洩漏的風險。除此之外,支撐柱116、邊框114與板體112係為一體成型結構,因此底板110具有良好的結構強度。如此一來,當晶片均溫板100運作時,晶片均溫板100因受熱而變形甚至損壞的機率能夠有效降低,使得晶片均溫板100的作業表現及工作壽命得以有效提升。Specifically, since the
第3圖繪示第1圖的晶片均溫板100的爆炸圖。同時參照第2圖與第3圖,晶片均溫板100還包括第一結構板130以及第二結構板140。第一結構板130位於散熱空間S1中。支撐柱116的底部116a由第一結構板130圍繞。第一結構板130包括複數個第一毛細結構132。第一毛細結構132朝向頂板120。第二結構板140位於散熱空間S1中。支撐柱116的頂部116b由第二結構板140圍繞。第二結構板140包括複數個第二毛細結構142。第二毛細結構142朝向底板110的板體112。Figure 3 shows an exploded view of the
根據實際應用情況,第一結構板130的第一毛細結構132與第二結構板140的第二毛細結構142可為微小的凸出結構、凹陷結構或網狀結構等,但並不以此為限。舉例來說,當晶片均溫板100運作時,容置於散熱空間S1中的工作流體會藉由反覆蒸發與凝結以改變其相位,從而提供散熱效果。第一結構板130的第一毛細結構132與第二結構板140的第二毛細結構142係配置以提高工作流體於散熱空間S1中蒸發與凝結的效率。According to actual application conditions, the
應理解到,已敘述的元件連接關係與功效將不重覆贅述,合先敘明。在以下敘述中,將說明其他形式的晶片均溫板。It should be understood that the connection relationships and functions of the components that have been described will not be repeated and will be explained first. In the following description, other forms of wafer vapor chambers will be described.
第4A圖繪示根據本揭露另一實施方式之晶片均溫板100a的立體圖。第4B圖繪示第4A圖的晶片均溫板100a沿線段4B-4B的剖面圖。同時參照第4A圖與第4B圖,晶片均溫板100a的底板110的板體112上具有晶片容置部S2,且晶片容置部S2背對散熱空間S1。晶片容置部S2可把晶片在運作時所產生的熱能帶走。第4A圖所示之實施方式與第1圖所示之實施方式不同地方在於,晶片均溫板100a的底板110的邊框114具有凸部115。底板110的邊框114的外側壁111位於頂板120的外側壁121與邊框114的凸部115之間。舉例來說,晶片均溫板100a的底板110的邊框114的凸部115可與扣合機構(圖未示)相互抵接,以提供固定效果。Figure 4A illustrates a perspective view of a
第5圖繪示根據本揭露又一實施方式之晶片均溫板100b的立體圖。雖然圖未示,但晶片均溫板100b的底板110上可具有如第2圖所示之晶片容置部S2。晶片容置部S2可把晶片在運作時所產生的熱能帶走。與第1圖之實施方式不同地方在於,晶片均溫板100b的底板110的邊框114的外側壁111與頂板120的外側壁121分別具有凹部117以及凹部127。底板110的邊框114的凹部117與頂板120的凹部127重疊。底板110的邊框114的凹部117位於底板110的相鄰兩角落之間。頂板120的凹部127位於頂板120的相鄰兩角落之間。Figure 5 illustrates a perspective view of a
在以下敘述中,將說明晶片均溫板的製造方法。In the following description, a method of manufacturing the wafer vapor chamber will be explained.
第6圖繪示根據本揭露一實施方式之晶片均溫板的製造方法的流程圖。晶片均溫板的製造方法包括下列步驟。首先在步驟500中,形成底板,其中底板包括板體、邊框以及支撐柱,邊框圍繞板體以定義出散熱空間,散熱空間配置以容置工作流體。接著在步驟600中,在底板的邊框上形成穿過邊框的通孔。接著在步驟700中,在邊框上設置頂板,其中底板的邊框的外側壁與頂板的外側壁共平面。之後在步驟800中,封閉並壓合通孔,以密封散熱空間。接著在步驟900中,在底板的板體上形成晶片容置部,其中晶片容置部背對散熱空間。在以下敘述中,將詳細說明上述各步驟。FIG. 6 illustrates a flow chart of a method for manufacturing a wafer vapor chamber according to an embodiment of the present disclosure. The manufacturing method of the wafer vapor chamber includes the following steps. First, in
第7圖繪示根據本揭露一實施方式之底板110與頂板120尚未組裝的示意圖。第8圖繪示第7圖的底板110與頂板120組裝後的示意圖。同時參照第7圖與第8圖,形成底板110,其中底板110包括板體112、邊框114以及支撐柱116。邊框114圍繞板體112以定義出散熱空間S1。散熱空間S1配置以容置工作流體。舉例來說,工作流體可為水,但並不以此為限。在本實施方式中,支撐柱116、邊框114與板體112為一體成型結構,因此底板110具有良好的結構強度。如此一來,當晶片均溫板100運作時,晶片均溫板100因受熱而變形甚至損壞的機率能夠有效降低,使得晶片均溫板100的作業表現及工作壽命得以有效提升。在形成底板110後,在底板110的邊框114上形成穿過邊框114的通孔H。FIG. 7 shows a schematic diagram of the
接著,同時參照第2圖、第7圖以及第8圖,製造方法還包括:設置第一結構板130,其中支撐柱116的底部116a由第一結構板130圍繞,第一結構板130包括第一毛細結構132,第一毛細結構132朝向頂板120;以及設置第二結構板140,其中支撐柱116的頂部116b由第二結構板140圍繞,第二結構板140包括第二毛細結構142,第二毛細結構142朝向底板110的板體112。Next, referring to Figures 2, 7 and 8 simultaneously, the manufacturing method further includes: setting a first
接著,在邊框114上設置頂板120以密封散熱空間S1,以形成如第8圖所示之結構。值得注意的是,底板110的邊框114的外側壁111與頂板120的外側壁121共平面。底板110的邊框114的周圍與頂板120的周圍具有相同的輪廓。底板110的外側壁111無連通於散熱空間S1的管體從其延伸而出,且底板110的邊框114的外側壁111與頂板120的外側壁121完全重疊。接著,可經由通孔H對散熱空間S1抽真空,並經由通孔H填充工作流體至散熱空間S1中。將工作流體填充至散熱空間S1中後,封閉並壓合通孔H,以密封散熱空間S1。在本實施方式中,通孔H是以電阻銲接、超音波銲接或高週波銲接的方式壓合。Next, a
接著,製造方法還包括在底板110的板體112上形成晶片容置部S2。晶片容置部S2背對散熱空間S1。舉例來說,形成晶片容置部S2可使用化學機械平坦化、銑銷、沖壓或蝕刻等方式。此外,可根據不同晶片的尺寸及厚度形成晶片容置部S2,以提供客製化效果,並使晶片可完全容置於晶片容置部S2中。Next, the manufacturing method further includes forming the wafer accommodating portion S2 on the
第9圖繪示根據本揭露另一實施方式之底板110與頂板120尚未組裝的示意圖。第10圖繪示第9圖的底板110與頂板120組裝後的示意圖。同時參照第9圖與第10圖,第9圖所示之實施方式與第8圖所示之實施方式不同地方在於,製造方法還包括在底板110的邊框114背對散熱空間S1之一側設置管體150。管體150具有連通於通孔H與散熱空間S1的開口。開口暴露於底板110外。在設置管體150後,可經由管體150的開口對散熱空間S1抽真空,並經由管體150與通孔H填充工作流體至散熱空間S1中。在將工作流體填充至散熱空間S1後,封閉並壓合通孔H,以密封散熱空間S1。在壓合通孔H後,切除管體150,並在底板110的板體112上形成如第2圖所示之晶片容置部S2。晶片容置部S2背對散熱空間S1。FIG. 9 illustrates a schematic diagram of the
請參照第4A圖以及第4B圖,製造方法還包括:在底板110的邊框114上形成凸部115,使邊框114的外側壁111位於頂板120的外側壁121與邊框114的凸部115之間。如此一來,晶片均溫板100a具有不同於第1圖之晶片均溫板100的外觀。詳細來說,晶片均溫板100a的邊框114具有段差,且晶片均溫板100a的底板110的邊框114的凸部115可與扣合機構(圖未示)相互抵接,以提供固定效果。Referring to Figures 4A and 4B, the manufacturing method also includes: forming a
請參照第5圖,製造方法還包括在底板110的邊框114的外側壁111與頂板120的外側壁121上分別形成凹部117以及凹部127。底板110的邊框114的凹部117位於底板110的相鄰兩角落之間。頂板120的凹部127位於頂板120的相鄰兩角落之間。底板110的邊框114的凹部117與頂板120的凹部127重疊。如此一來,晶片均溫板100b具有不同於第1圖之晶片均溫板100的外觀,以達到客製化效果。Referring to FIG. 5 , the manufacturing method also includes forming
綜上所述,晶片均溫板的底板的邊框的外側壁與頂板的外側壁共平面,也就是說,底板的邊框上並無連通於散熱空間的管體從其延伸而出。由於晶片均溫板的底板的邊框上不具有管體,從而避免了裸露的管體受到碰撞產生破裂之機會,也降低了因管體破裂而導致散熱空間中的工作流體洩漏的風險。To sum up, the outer wall of the frame of the bottom plate of the wafer vapor chamber is coplanar with the outer wall of the top plate. That is to say, there is no tube connected to the heat dissipation space extending from the frame of the base plate. Since there is no tube body on the frame of the bottom plate of the wafer vapor chamber, the chance of the exposed tube body being broken due to collision is avoided, and the risk of leakage of the working fluid in the heat dissipation space due to tube body rupture is also reduced.
前述概述了幾個實施方式的特徵,使得本領域技術人員可以更好地理解本揭露的態樣。本領域技術人員應當理解,他們可以容易地將本揭露用作設計或修改其他過程和結構的基礎,以實現與本文介紹的實施方式相同的目的和/或實現相同的優點。本領域技術人員還應該認識到,這樣的等效構造不脫離本揭露的精神和範圍,並且在不脫離本揭露的精神和範圍的情況下,它們可以在這裡進行各種改變,替換和變更。The foregoing outlines features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can be variously changed, substituted, and altered herein without departing from the spirit and scope of the present disclosure.
100:晶片均溫板
100a:晶片均溫板
100b:晶片均溫板
110:底板
111:外側壁
112:板體
113:頂面
114:邊框
115:凸部
116:支撐柱
116a:底部
116b:頂部
117:凹部
120:頂板
121:外側壁
123:頂面
127:凹部
130:第一結構板
132:第一毛細結構
140:第二結構板
142:第二毛細結構
150:管體
500:步驟
600:步驟
700:步驟
800:步驟
900:步驟
H:通孔
S1:散熱空間
S2:晶片容置部
2-2:線段
4B-4B:線段
100:
當結合隨附諸圖閱讀時,得自以下詳細描述最佳地理解本揭露之一實施方式。應強調,根據工業上之標準實務,各種特徵並未按比例繪製且僅用於說明目的。事實上,為了論述清楚,可任意地增大或減小各種特徵之尺寸。
第1圖繪示根據本揭露一實施方式之晶片均溫板的立體圖。
第2圖繪示第1圖的晶片均溫板沿線段2-2的剖面圖。
第3圖繪示第1圖的晶片均溫板的爆炸圖。
第4A圖繪示根據本揭露另一實施方式之晶片均溫板的立體圖。
第4B圖繪示第4A圖的晶片均溫板沿線段4B-4B的剖面圖。
第5圖繪示根據本揭露又一實施方式之晶片均溫板的立體圖。
第6圖繪示根據本揭露一實施方式之晶片均溫板的製造方法的流程圖。
第7圖繪示根據本揭露一實施方式之底板與頂板尚未組裝的示意圖。
第8圖繪示第7圖的底板與頂板組裝後的示意圖。
第9圖繪示根據本揭露另一實施方式之底板與頂板尚未組裝的示意圖。
第10圖繪示第9圖的底板與頂板組裝後的示意圖。
One embodiment of the present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It is emphasized that, in accordance with standard industry practice, various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
Figure 1 is a perspective view of a chip vapor chamber according to an embodiment of the present disclosure.
Figure 2 shows a cross-sectional view along line 2-2 of the wafer vapor chamber in Figure 1 .
Figure 3 shows an exploded view of the wafer vapor chamber in Figure 1 .
Figure 4A is a perspective view of a wafer vapor chamber according to another embodiment of the present disclosure.
Figure 4B illustrates a cross-sectional view along
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without
100:晶片均溫板 100: Wafer vapor chamber
110:底板 110: Bottom plate
111:外側壁 111:Outside wall
120:頂板 120:top plate
121:外側壁 121:Outside wall
123:頂面 123:Top surface
2-2:線段 2-2: Line segment
Claims (17)
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| US18/045,469 US12495525B2 (en) | 2021-11-26 | 2022-10-11 | Vapor chamber lid and manufacturing method thereof |
| US18/793,970 US20240397668A1 (en) | 2021-11-26 | 2024-08-05 | Vapor chamber lid and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201616943A (en) * | 2014-10-21 | 2016-05-01 | Asia Vital Components Co Ltd | EMI shielding structure for electronic components |
| TW201617578A (en) * | 2014-11-05 | 2016-05-16 | Auras Technology Co Ltd | Vapor chamber |
| TWM614442U (en) * | 2021-03-25 | 2021-07-11 | 健策精密工業股份有限公司 | Vapor chamber |
| TWM625563U (en) * | 2021-11-26 | 2022-04-11 | 健策精密工業股份有限公司 | Vapor chamber lid |
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| US8970029B2 (en) * | 2009-07-30 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermally enhanced heat spreader for flip chip packaging |
| TWI542277B (en) * | 2014-09-30 | 2016-07-11 | 旭德科技股份有限公司 | Thermal module |
| TWI658248B (en) | 2018-02-13 | 2019-05-01 | 奇鋐科技股份有限公司 | Vapor chamber water-filling section sealing structure and manufacturing method thereof |
| TWI701419B (en) | 2019-06-27 | 2020-08-11 | 國立清華大學 | Vapor chamber structure |
| US11839057B2 (en) * | 2019-07-12 | 2023-12-05 | Samsung Electronics Co., Ltd | Apparatus with housing having structure for radiating heat |
| CN112868275B (en) * | 2019-09-12 | 2022-09-16 | 华为技术有限公司 | Vapor chamber, heat sink, and terminal |
| CN111343838A (en) * | 2020-03-12 | 2020-06-26 | 苏州永腾电子制品有限公司 | Temperature-equalizing plate and production process thereof |
| TW202212763A (en) | 2020-09-15 | 2022-04-01 | 建準電機工業股份有限公司 | A vapor chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201616943A (en) * | 2014-10-21 | 2016-05-01 | Asia Vital Components Co Ltd | EMI shielding structure for electronic components |
| TW201617578A (en) * | 2014-11-05 | 2016-05-16 | Auras Technology Co Ltd | Vapor chamber |
| TWM614442U (en) * | 2021-03-25 | 2021-07-11 | 健策精密工業股份有限公司 | Vapor chamber |
| TWM625563U (en) * | 2021-11-26 | 2022-04-11 | 健策精密工業股份有限公司 | Vapor chamber lid |
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