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TWI815675B - A system for detecting silicon wafers - Google Patents

A system for detecting silicon wafers Download PDF

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TWI815675B
TWI815675B TW111136473A TW111136473A TWI815675B TW I815675 B TWI815675 B TW I815675B TW 111136473 A TW111136473 A TW 111136473A TW 111136473 A TW111136473 A TW 111136473A TW I815675 B TWI815675 B TW I815675B
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silicon
detection device
silicon wafer
contact
detecting
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TW202303796A (en
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付子成
黨志偉
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大陸商西安奕斯偉材料科技股份有限公司
大陸商西安奕斯偉矽片技術有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation

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  • General Health & Medical Sciences (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

本發明實施例公開了一種用於檢測矽片的系統,該系統包括:多個承載件,用於通過與該矽片的相應的多個部位接觸而對該述矽片進行承載;檢測裝置,用於通過相對於該矽片移動而對該矽片的不同部位的缺陷進行檢測;感測裝置,用於感測該檢測裝置的位置並且當感測到該檢測裝置處於對該矽片的與相應承載件接觸的部位進行檢測的位置時生成第一指令信號;驅動裝置,用於基於該第一指令信號使該相應承載件從與該矽片接觸的接觸位置移動至不與該矽片接觸的遠離位置,使得該矽片被該多個承載件中的除了該相應承載件以外的其他承載件承載。An embodiment of the present invention discloses a system for detecting silicon wafers. The system includes: a plurality of bearing members for carrying the silicon wafers by contacting corresponding multiple parts of the silicon wafers; a detection device, for detecting defects in different parts of the silicon chip by moving relative to the silicon chip; a sensing device for sensing the position of the detection device and when sensing that the detection device is in contact with the silicon chip A first command signal is generated when the contact position of the corresponding bearing member is detected; the driving device is used to move the corresponding bearing member from a contact position in contact with the silicon chip to a position not in contact with the silicon chip based on the first command signal The distance position is such that the silicon chip is carried by other bearing members in the plurality of bearing members except the corresponding bearing member.

Description

一種用於檢測矽片的系統A system for detecting silicon wafers

本發明屬於半導體製造領域,尤其關於一種用於檢測矽片的系統。The invention belongs to the field of semiconductor manufacturing, and in particular relates to a system for detecting silicon wafers.

為各種原因而導致矽片具有雜質從而產生缺陷,由於上述步驟之間複雜的相互作用,在矽片的邊緣區域往往更容易產生缺陷,在矽片的邊緣造成了不穩定的薄膜堆積,在後續的步驟中,這些薄膜的部分或者全部可能產生缺陷,而這些缺陷會被轉移到矽片的器件區域。隨著資訊化的全球發展,矽片應用領域的器件尺寸持續減小,上述缺陷的影響逐漸變的更加顯著。因此,矽片的邊緣在半導體製造中已經成為了良率限制的主要來源之一。在器件製造過程中,有效地去除這些在矽片邊緣處堆積起來的薄膜,可以減少缺陷,得到更高的器件良率。Due to various reasons, the silicon wafer contains impurities and causes defects. Due to the complex interaction between the above steps, defects are often more likely to occur in the edge area of the silicon wafer, causing unstable film accumulation at the edge of the silicon wafer. During the steps, defects may occur in part or all of these films, and these defects may be transferred to the device area of the silicon wafer. With the global development of informatization, the size of devices in silicon chip applications continues to decrease, and the impact of the above defects has gradually become more significant. As a result, the edge of the silicon wafer has become one of the major sources of yield limitations in semiconductor manufacturing. During the device manufacturing process, effectively removing these films accumulated at the edges of the silicon wafer can reduce defects and achieve higher device yields.

針對矽片外觀缺陷自動檢測裝置的使用目前已經十分普遍,其主要通過對矽片的表面進行拍攝,通過獲得的表面圖像識別矽片表面上的顆粒、劃痕、化學沾汙和邊緣破損等缺陷後經資訊處理模組對結果進行數位化處理,從而對該矽片的品質作出評定,判斷其能否滿足品質需求,從而避免不良產品流入後續的加工步驟之中,造成產能浪費,良率降低。The use of automatic detection devices for silicon wafer appearance defects is now very common. It mainly photographs the surface of the silicon wafer and uses the obtained surface image to identify particles, scratches, chemical contamination, edge damage, etc. on the surface of the silicon wafer. After the defect is detected, the information processing module digitizes the results to evaluate the quality of the silicon wafer and determine whether it can meet quality requirements, thereby preventing defective products from flowing into subsequent processing steps, resulting in waste of production capacity and low yield. reduce.

相關技術中,針對矽片外觀缺陷監測常用的檢測方法有背面接觸式檢測和邊緣接觸式檢測,其中在使用背面接觸式缺陷檢測方法時通過對矽片背面的吸附能夠實現對矽片的固定,從而精準地拍攝矽片的邊緣和上表面的缺陷,但是,背面吸附裝置使的無法獲取矽片背面的完整圖像,同時因為背面接觸會留下汙染了矽片背面的污漬而影響產品品質,增加後續步驟中清洗步驟的負擔,同時在後續的清潔步驟中並不能夠保證完全地清除上述殘留的污漬。在使用邊緣接觸式缺陷檢測方法時通過矽片邊緣夾持裝置實現矽片的固定,通過照相機對矽片的表面進行拍攝,由於用於夾持矽片的夾具會在拍攝矽片表面時遮擋一部分矽片,所以為了獲得完整的矽片邊緣的圖像,在一次矽片表面拍攝後需要鬆開夾具,將矽片旋轉預定角度後重新夾持進行第二次針對矽片表面的拍攝,這就使得相關技術中的邊緣接觸式檢測的檢測效率低,並且重複夾持的動作會給矽片的邊緣造成額外的汙染。In related technologies, commonly used detection methods for monitoring silicon wafer appearance defects include back contact detection and edge contact detection. When using the back contact defect detection method, the silicon wafer can be fixed by adsorption to the back of the silicon wafer. Thus, the edge of the silicon wafer and the defects on the upper surface can be accurately photographed. However, the back adsorption device makes it impossible to obtain a complete image of the back of the silicon wafer. At the same time, because the back surface contact will leave stains that contaminate the back of the silicon wafer, affecting product quality. This increases the burden of the cleaning steps in the subsequent steps, and at the same time, it is not guaranteed to completely remove the above-mentioned residual stains in the subsequent cleaning steps. When using the edge contact defect detection method, the silicon wafer is fixed by a silicon wafer edge clamping device, and the surface of the silicon wafer is photographed through a camera. Since the clamp used to clamp the silicon wafer will block part of the surface of the silicon wafer when photographing Silicon wafer, so in order to obtain a complete image of the edge of the silicon wafer, it is necessary to loosen the clamp after taking a shot of the silicon wafer surface, rotate the silicon wafer to a predetermined angle and then re-clamp it to take a second shot of the silicon wafer surface. This is This makes the detection efficiency of edge contact detection in the related art low, and repeated clamping actions will cause additional contamination to the edge of the silicon wafer.

為解決上述技術問題,本發明實施例期望提供一種用於檢測矽片的系統,通過在檢測裝置處於對矽片的與任一承載件接觸的部位進行檢測的位置時控制相應的承載件躲避檢測裝置的構型保證晶矽片邊緣缺陷檢測的完整性,避免漏檢。In order to solve the above technical problems, embodiments of the present invention are expected to provide a system for detecting silicon wafers, by controlling the corresponding carrier to avoid detection when the detection device is in a position to detect the part of the silicon wafer that is in contact with any carrier. The configuration of the device ensures the integrity of edge defect detection of silicon wafers and avoids missed detections.

本發明的技術方案是這樣實現的: 一種用於檢測矽片的系統,該系統包括:多個承載件,用於通過與該矽片的相應的多個部位接觸而對該矽片進行承載;檢測裝置,用於通過相對於該矽片移動而對該矽片的不同部位的缺陷進行檢測;感測裝置,用於感測該檢測裝置的位置並且當感測到該檢測裝置處於對該矽片的與相應承載件接觸的部位進行檢測的位置時生成第一指令信號;驅動裝置,用於基於該第一指令信號使該相應承載件從與該矽片接觸的接觸位置移動至不與該矽片接觸的遠離位置,使得該矽片被該多個承載件中的除了該相應承載件以外的其他承載件承載。 The technical solution of the present invention is implemented as follows: A system for detecting silicon wafers, the system includes: a plurality of carriers, used to carry the silicon wafers by contacting with corresponding multiple parts of the silicon wafers; a detection device, used to pass relative to the silicon wafers The chip moves to detect defects in different parts of the silicon chip; the sensing device is used to sense the position of the detection device and when it senses that the detection device is in contact with the corresponding bearing member of the silicon chip, A first command signal is generated when the detected position is detected; a driving device is used to move the corresponding carrier from a contact position in contact with the silicon chip to a distant position not in contact with the silicon chip based on the first command signal, so that the silicon chip The sheet is carried by other carriers in the plurality of carriers except the corresponding carrier.

本發明實施例提供了一種用於檢測矽片的系統,通過感測裝置感測檢測裝置的位置,當檢測位置處於對該矽片的與相應承載件接觸的部位進行檢測的位置時驅動相應承載件不與矽片接觸,使得檢測裝置能夠完全的獲得矽片的邊緣的圖像,同時通過多個承載件能獨立地在接觸位置與遠離位置之間切換的構型,保證當相應承載件不與矽片接觸時,矽片能夠被其他承載件穩定地保持。Embodiments of the present invention provide a system for detecting silicon wafers. The position of the detection device is sensed by a sensing device. When the detection position is at a position for detecting the portion of the silicon wafer that is in contact with the corresponding carrier, the corresponding carrier is driven. The components are not in contact with the silicon wafer, so that the detection device can completely obtain the image of the edge of the silicon wafer. At the same time, through the configuration of multiple carriers that can independently switch between the contact position and the away position, it is ensured that when the corresponding carrier is not When in contact with the silicon chip, the silicon chip can be stably held by other bearing members.

為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效,茲將本發明配合附圖及附件,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍,合先敘明。In order to help the review committee understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is described in detail below in the form of embodiments with the accompanying drawings and attachments, and the drawings used therein are , its purpose is only for illustration and auxiliary description, and may not represent the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited to the actual implementation of the present invention. The scope shall be stated first.

在本發明實施例的描述中,需要理解的是,術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“垂直”、“水平”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明實施例和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical" The orientations or positional relationships indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description. , rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be construed as a limitation of the present invention.

此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中,“多個”的含義是兩個或兩個以上,除非另有明確具體的限定。In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, features defined as “first” and “second” may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present invention, "plurality" means two or more than two, unless otherwise explicitly and specifically limited.

在本發明實施例中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言,可以根據具體情況理解上述術語在本發明實施例中的具體含義。In the embodiments of the present invention, unless otherwise expressly stipulated and limited, the terms "installation", "connection", "connection", "fixing" and other terms should be understood in a broad sense. For example, it can be a fixed connection or a removable connection. Disassembly and connection, or integration; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two elements or an interaction between two elements. For those with ordinary knowledge in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

在相關技術中的邊緣接觸式缺陷檢測方法無法在只進行一次檢測的前提下獲得矽片表面的完整圖像,因為用於固定矽片的矽片邊緣夾具會遮擋夾具與矽片邊緣接觸的部位,存在邊緣缺陷漏檢的風險。為了避免上述風險,在相關技術中獲得矽片的上下表面之後轉動矽片再重新夾持矽片進行缺陷檢測,但以此方式會增加工藝時間,降低整體效率。基於此,發明人提出了一種用於檢測矽片的系統,通過該系統能夠在矽片檢測的過程中避免矽片邊緣夾具遮擋矽片邊緣,從而通過一次檢測便能夠實現對矽片邊緣完整地缺陷檢測,同時還能夠在檢測矽片表面缺陷的整個過程中穩定地保持矽片。The edge contact defect detection method in the related art cannot obtain a complete image of the silicon wafer surface under the premise of only one inspection, because the silicon wafer edge clamp used to fix the silicon wafer will block the part where the clamp contacts the edge of the silicon wafer. , there is a risk of missed detection of edge defects. In order to avoid the above risks, in the related art, the upper and lower surfaces of the silicon wafer are obtained, the silicon wafer is rotated, and then the silicon wafer is re-clamped for defect detection. However, this method will increase the process time and reduce the overall efficiency. Based on this, the inventor proposed a system for detecting silicon wafers. Through this system, the edge clamp of the silicon wafer can be prevented from blocking the edge of the silicon wafer during the detection of the silicon wafer, so that the edge of the silicon wafer can be completely detected through one inspection. Defect detection, while also being able to stably hold the silicon wafer during the entire process of detecting surface defects on the silicon wafer.

參見附圖1,上述用於檢測矽片的系統包括:多個承載件G,該多個承載件G互相配合穩定地保持矽片W,參見附圖1,承載件G可選有8個,該多個承載件G以與矽片W的相應的多個部位接觸的方式對矽片W進行承載,單個承載件G與矽片W接觸的部位固定、即在整個矽片檢測過程中該單個承載件G與矽片W接觸的部位始終保持不變,該單個承載件G能夠從與矽片W接觸的接觸位置移動至釋放矽片W的遠離位置、即該單個承載件G能夠移動遠離矽片W不與矽片W接觸,其中,每個承載件G能夠實現單獨地從接觸位置移動至遠離位置,可選地,承載件G通過接觸該矽片W的背面的周緣對該矽片W進行支承,從而減少了在檢測過程中矽片W被承載件G所遮擋的面積; 用於檢測矽片W缺陷的檢測裝置D,在檢測過程中該檢測裝置D相對於矽片W移動,該檢測裝置D在移動過程中能夠獲取位於該檢測裝置D的檢測範圍之內的矽片W的表面圖像,通過影像處理單元分析所獲取的圖像而檢測出矽片W的表面上不同部位存在的缺陷。可選地,該檢測裝置D為用於拍攝該矽片W的圖像的相機,例如CCD相機。 Referring to Figure 1, the above-mentioned system for detecting silicon wafers includes: a plurality of carriers G, which cooperate with each other to stably hold the silicon wafer W. Referring to Figure 1, there are 8 optional carriers G. The multiple carriers G carry the silicon wafer W in a manner that they are in contact with corresponding multiple parts of the silicon wafer W. The parts in contact with the silicon wafer W of a single carrier G are fixed, that is, during the entire silicon wafer detection process, the single carrier G carries the silicon wafer W. The position where the carrier G is in contact with the silicon chip W always remains unchanged, and the single carrier G can move from the contact position with the silicon chip W to the away position where the silicon chip W is released, that is, the single carrier G can move away from the silicon. The sheet W is not in contact with the silicon sheet W, wherein each carrier G can move independently from the contact position to the away position. Optionally, the carrier G moves against the silicon sheet W by contacting the periphery of the back side of the silicon sheet W. Support, thereby reducing the area of the silicon chip W blocked by the carrier G during the detection process; A detection device D used to detect defects in the silicon wafer W. During the detection process, the detection device D moves relative to the silicon wafer W. During the movement, the detection device D can acquire the silicon wafers located within the detection range of the detection device D. The surface image of W is analyzed by the image processing unit to detect defects in different parts of the surface of the silicon wafer W. Optionally, the detection device D is a camera used to capture an image of the silicon chip W, such as a CCD camera.

在整個檢測過程中,該多個承載件G能夠互相配合始終穩定地保持矽片W,為了解決上述所面臨的技術問題,發明人所提出的系統在該檢測裝置D移動至矽片W的與任一承載件G接觸的部位時,相應承載件G能夠從接觸位置移動至遠離位置,使得矽片W上與相應承載件G接觸的部位暴露在該檢測裝置D的檢測範圍內而不被該相應承載件G遮擋,該用於檢測矽片W的系統包括感測裝置S,該感測裝置S用於感測該檢測裝置D的位置,當該檢測裝置D對矽片W上與任一承載件G接觸的部位進行檢測時該感測裝置S能夠生成第一指令信號,也就是說,該檢測裝置D的檢測範圍內出現任一承載件G時該感測裝置S能夠生成第一指令信號; 同時,該用於檢測矽片W的系統還包括驅動裝置M,該驅動裝置M能夠接收該第一指令信號,並基於該第一指令信號驅動位於該檢測裝置D的檢測範圍內的相應承載件G從接觸位置移動至遠離位置,從而使得矽片W上被該相應承載件G遮擋的部分暴露在該檢測裝置D的檢測範圍內,驅動裝置M可選為步進電機。與此同時,矽片W仍然被不位於該檢測裝置D的檢測範圍內的多個其他承載件G承載而被穩定地保持。可選地,該相應承載件G沿著被支承的矽片W的徑向移動,以避免承載件G在移動過程中與該系統的其他裝置發生碰撞。 During the entire detection process, the multiple carriers G can cooperate with each other to hold the silicon wafer W stably. In order to solve the above technical problems, the system proposed by the inventor moves the detection device D to the silicon wafer W. When any part of the carrier G is in contact, the corresponding carrier G can move from the contact position to the far away position, so that the part of the silicon chip W that is in contact with the corresponding carrier G is exposed within the detection range of the detection device D without being detected by the detection device D. The corresponding carrier G is blocked. The system for detecting the silicon wafer W includes a sensing device S. The sensing device S is used to sense the position of the detection device D. When the detection device D detects any contact between the silicon wafer W and the silicon wafer W, The sensing device S can generate a first command signal when detecting the part in contact with the carrier G. That is to say, the sensing device S can generate a first command when any carrier G appears within the detection range of the detection device D. signal; At the same time, the system for detecting the silicon wafer W also includes a driving device M, which can receive the first command signal and drive the corresponding carrier located within the detection range of the detection device D based on the first command signal. G moves from the contact position to the away position, so that the portion of the silicon chip W blocked by the corresponding carrier G is exposed within the detection range of the detection device D. The driving device M can be selected as a stepper motor. At the same time, the silicon wafer W is still carried by a plurality of other carriers G that are not located within the detection range of the detection device D and is stably held. Optionally, the corresponding carrier G moves along the radial direction of the supported silicon chip W to prevent the carrier G from colliding with other devices of the system during movement.

通過上述用於檢測矽片W的系統對矽片W的不同部位的表面進行缺陷檢測時,當檢測裝置D移動至矽片W上與任一承載件G接觸的部位時,感測裝置S向驅動裝置M發出第一指令信號,該驅動裝置M驅動相應承載件G遠離矽片W,退出該檢測裝置D的檢測範圍,從而使矽片W上被該相應承載件G遮擋的部位完整地暴露在該檢測裝置D的檢測範圍之中,解決了在矽片W表面缺陷檢測過程中,由於承載件G遮擋矽片W邊緣導致檢測不完整的技術問題。可選地,該檢測裝置D包括在被承載的該矽片W兩側移動以分別對該矽片W的正面和背面進行檢測的正面檢測器和背面檢測器,通過在矽片W的正面和背面分別設置相應的檢測器,使得檢測裝置D在移動過程中能夠同時對矽片W的同一部位的上、下表面檢測。When defects are detected on the surface of different parts of the silicon wafer W through the above-mentioned system for detecting the silicon wafer W, when the detection device D moves to the part of the silicon wafer W that is in contact with any carrier G, the sensing device S moves toward The driving device M sends a first command signal, and the driving device M drives the corresponding carrier G away from the silicon chip W and exits the detection range of the detection device D, thereby completely exposing the portion of the silicon chip W that is blocked by the corresponding carrier G. Within the detection range of the detection device D, the technical problem of incomplete detection due to the carrier G blocking the edge of the silicon wafer W during the surface defect detection process of the silicon wafer W is solved. Optionally, the detection device D includes a front detector and a back detector that move on both sides of the carried silicon chip W to detect the front and back sides of the silicon chip W respectively. Corresponding detectors are respectively provided on the back side, so that the detection device D can simultaneously detect the upper and lower surfaces of the same part of the silicon wafer W during movement.

上述感測裝置S還能夠在感測到該檢測裝置D處於對該矽片W的不與相應的承載件G接觸的部分進行檢測時生成第二控制信號,也就是說,在矽片W表面缺陷檢測的過程中,檢測裝置D對矽片W表面上被任一承載件G遮擋的部位完成檢測後繼續相對於矽片W移動,當位於檢測範圍內的矽片W表面不再具有能夠與相應承載件G接觸的部位時,該感測裝置S向該驅動裝置M發送第二指令信號,該驅動裝置M基於該第二指令信號驅動相應承載件G從遠離位置返回至接觸位置,實現對矽片W邊緣部分的夾持,此時由於檢測裝置D已完成了該部位的檢測,所以該相應承載件G在接觸位置承載矽片W也不會遮擋矽片W的表面。在另一實施方式中,該感測裝置S包括用於測量該檢測裝置D與其移動方向上的固定位置之間的距離的測距儀,以根據該距離獲得該檢測裝置D的位置,該測距儀包括設置在該固定位置處的鐳射發射器以及設置在該檢測裝置D上跟隨該檢測裝置D一起移動的鐳射接收器,其中,該鐳射發射器與該鐳射接收器可選地設置在同一水平高度。The above-mentioned sensing device S can also generate a second control signal when sensing that the detection device D is detecting a portion of the silicon wafer W that is not in contact with the corresponding carrier G, that is, on the surface of the silicon wafer W During the defect detection process, the detection device D continues to move relative to the silicon wafer W after completing the detection of the parts of the surface of the silicon wafer W that are blocked by any carrier G. When the surface of the silicon wafer W located within the detection range no longer has the ability to communicate with When the corresponding bearing member G is in contact with the position, the sensing device S sends a second command signal to the driving device M. The driving device M drives the corresponding bearing member G to return from the away position to the contact position based on the second command signal to realize the alignment. For the clamping of the edge part of the silicon chip W, since the detection device D has completed the detection of this part at this time, the corresponding carrier G does not block the surface of the silicon chip W when it carries the silicon chip W at the contact position. In another embodiment, the sensing device S includes a distance meter for measuring the distance between the detection device D and its fixed position in the direction of movement, so as to obtain the position of the detection device D according to the distance. The distance meter includes a laser transmitter disposed at the fixed position and a laser receiver disposed on the detection device D and moving together with the detection device D, wherein the laser transmitter and the laser receiver are optionally disposed at the same location. Horizontal height.

具體的,在實際檢測過程中,參見附圖2,在矽片檢測開始之前,多個承載件G處於接觸位置承載矽片W,檢測裝置D從初始位置沿著矽片W的徑向移動,當檢測裝置D移動至處於對矽片W的與承載件G1接觸的部位P1進行檢測的位置Q1時,由於承載件G1與矽片W接觸的部位P1是固定的,當檢測裝置D位於位置Q1時可知檢測裝置D的檢測範圍內的矽片W存在與承載件G1接觸的部位,於是當感測裝置S感測到檢測裝置D位於檢測位置Q1時生成第一指令信號,驅動裝置M基於第一指令信號驅動承載件G1從接觸位置移動至遠離位置,使得矽片W的部位P1完整的暴露在檢測裝置D的檢測範圍之內,檢測裝置D獲得矽片W邊緣部位P1的完整圖像,此時承載件G1之外的多個承載件G處於接觸位置穩定地承載矽片W;當檢測裝置D完成對矽片W的部位P1的檢測後繼續移動,矽片W的部位P1相對地離開檢測裝置D的檢測範圍,即檢測裝置D處於對矽片W的不與承載件G1接觸的部位進行檢測的位置,此時感測裝置S生成第二指令信號,驅動裝置M基於第二指令信號驅動承載件G1從遠離位置移動至接觸位置,承載件G1接觸矽片W的邊緣部位P1以實現對矽片W的承載。當檢測裝置D移動至處於對矽片W的與承載件G2接觸的部位進行檢測的位置時重複上述過程。Specifically, during the actual detection process, see Figure 2, before the silicon wafer detection starts, multiple carriers G are in contact positions to carry the silicon wafer W, and the detection device D moves from the initial position along the radial direction of the silicon wafer W. When the detection device D moves to the position Q1 for detecting the part P1 of the silicon chip W that is in contact with the carrier G1, since the part P1 of the silicon chip W that is in contact with the carrier G1 is fixed, when the detection device D is at the position Q1 It can be seen that the silicon chip W within the detection range of the detection device D exists in contact with the carrier G1, so when the sensing device S senses that the detection device D is located at the detection position Q1, the first command signal is generated, and the driving device M is based on the first command signal. A command signal drives the carrier G1 to move from the contact position to the away position, so that the part P1 of the silicon wafer W is completely exposed within the detection range of the detection device D. The detection device D obtains a complete image of the edge part P1 of the silicon wafer W. At this time, multiple carriers G other than the carrier G1 are in contact positions to stably carry the silicon chip W; when the detection device D completes the detection of the part P1 of the silicon chip W and continues to move, the part P1 of the silicon chip W moves away relatively The detection range of the detection device D, that is, the detection device D is in a position to detect the part of the silicon chip W that is not in contact with the carrier G1. At this time, the sensing device S generates a second command signal, and the driving device M is based on the second command signal. The carrier G1 is driven to move from the away position to the contact position, and the carrier G1 contacts the edge portion P1 of the silicon chip W to support the silicon chip W. The above process is repeated when the detection device D moves to a position for detecting the portion of the silicon chip W that is in contact with the carrier G2.

在另一實施方式中,檢測裝置D沿著矽片W的徑向移動,多個承載件G成對的設置,各對承載件G中的兩個承載件G之間的連接線彼此平行並且都垂直於該徑向,通過上述構型,該檢測裝置D能夠同時對該矽片W的與每對承載件G中的兩個承載件G接觸的部位進行檢測。進一步地,位於該徑向的同一側的該承載件G在被承載的該矽片W的周向上均勻分佈,參見附圖3,位於該徑向同一側的承載件G沿著矽片W的周向等間距地間隔設置,各對承載件G中的兩個承載件G能夠同時地在接觸位置與遠離位置之間切換,並且該各對承載件G經配置為當任一對承載件G處於遠離位置時,其餘各對承載件G均處於接觸位置以實現對矽片W的穩定承載。In another embodiment, the detection device D moves along the radial direction of the silicon chip W, a plurality of carriers G are arranged in pairs, and the connecting lines between two carriers G in each pair of carriers G are parallel to each other and are perpendicular to the radial direction. With the above configuration, the detection device D can simultaneously detect the parts of the silicon chip W that are in contact with the two carriers G in each pair of carriers G. Further, the carriers G located on the same side in the radial direction are evenly distributed in the circumferential direction of the silicon chip W being carried. Referring to Figure 3, the carriers G located on the same side in the radial direction are evenly distributed along the circumferential direction of the silicon chip W. Circumferentially equally spaced, two load bearing members G in each pair of load bearing members G can switch between the contact position and the distance position simultaneously, and each pair of load bearing members G is configured such that when any pair of load bearing members G When in the distanced position, the remaining pairs of bearing members G are in contact positions to achieve stable bearing of the silicon wafer W.

具體的,在實際檢測過程中,參見附圖4,在矽片檢測開始之前,多個承載件G處於接觸位置承載矽片W,檢測裝置D從初始位置沿著矽片W的徑向移動,當檢測裝置D移動至處於對矽片W的與一對承載件G1接觸的部位P1和部位P1'進行檢測的位置Q1時,由於一對承載件G1與矽片W接觸的部位是固定的,當檢測裝置D位於位置Q1時可知檢測裝置D的檢測範圍內的矽片W表面存在與一對承載件G1接觸的部位P1和部位P1',於是感測裝置S感測到檢測裝置D位於檢測位置Q1時生成第一指令信號,驅動裝置M基於第一指令信號驅動一對承載件G1從接觸位置移動至遠離位置,使得矽片W的部位P1和部位P1'完整的暴露在檢測裝置D的檢測範圍之內,檢測裝置D獲得矽片W邊緣部位P1和部位P1'的完整圖像,此時一對承載件G1之外的多對承載件G處於接觸位置以穩定地承載矽片W;當檢測裝置D完成對矽片W的部位P1和部位P1'的檢測後繼續移動,矽片W的部位P1和部位P1'相對地離開檢測裝置D的檢測範圍,即檢測裝置D處於對矽片W的不與一對承載件G1接觸的部位進行檢測的位置,此時感測裝置S生成第二指令信號,驅動裝置M基於第二指令信號驅動承載件G1從遠離位置移動至接觸位置,一對承載件G1接觸矽片W的部位P1和部位P1'以實現對矽片W的承載。當檢測裝置D移動至處於對矽片W的與另一對承載件G2接觸的部位進行檢測的位置時重複上述過程。Specifically, during the actual detection process, see Figure 4, before the silicon wafer detection starts, multiple carriers G are in contact positions to carry the silicon wafer W, and the detection device D moves along the radial direction of the silicon wafer W from the initial position. When the detection device D moves to the position Q1 for detecting the parts P1 and P1' of the silicon chip W that are in contact with the pair of carriers G1, since the parts of the pair of carriers G1 that are in contact with the silicon chip W are fixed, When the detection device D is located at the position Q1, it can be seen that the surface of the silicon chip W within the detection range of the detection device D has a portion P1 and a portion P1' that are in contact with a pair of carriers G1, so the sensing device S senses that the detection device D is located at the detection range. The first command signal is generated at the position Q1, and the driving device M drives the pair of carriers G1 to move from the contact position to the away position based on the first command signal, so that the parts P1 and P1' of the silicon chip W are completely exposed to the detection device D. Within the detection range, the detection device D obtains a complete image of the edge portion P1 and P1' of the silicon wafer W. At this time, multiple pairs of carriers G other than the pair of carriers G1 are in contact positions to stably carry the silicon wafer W; When the detection device D completes the detection of the parts P1 and P1' of the silicon wafer W, it continues to move. The parts P1 and P1' of the silicon wafer W relatively leave the detection range of the detection device D, that is, the detection device D is in the position of detecting the silicon wafer W. The position of W that is not in contact with the pair of carriers G1 is detected. At this time, the sensing device S generates a second command signal, and the driving device M drives the carrier G1 to move from the away position to the contact position based on the second command signal. The supporting member G1 contacts the portion P1 and the portion P1' of the silicon chip W to support the silicon chip W. The above process is repeated when the detection device D moves to a position for detecting the portion of the silicon chip W that is in contact with the other pair of carriers G2.

需要說明的是:本發明實施例所記載的技術方案之間,在不衝突的情況下,可以任意組合。附圖標記中所示出的各個部件之間的比例並非固定比例,其主要目的是為了便於方案理解。It should be noted that the technical solutions recorded in the embodiments of the present invention can be combined arbitrarily as long as there is no conflict. The proportions between the various components shown in the reference numerals are not fixed and are mainly intended to facilitate understanding of the scheme.

以上僅為本發明之較佳實施例,並非用來限定本發明之實施範圍,如果不脫離本發明之精神和範圍,對本發明進行修改或者等同替換,均應涵蓋在本發明申請專利範圍的保護範圍當中。The above are only preferred embodiments of the present invention and are not intended to limit the implementation scope of the present invention. If the present invention is modified or equivalently substituted without departing from the spirit and scope of the present invention, the protection shall be covered by the patent scope of the present invention. within the range.

M:驅動裝置 W:矽片 S:感測裝置 D:檢測裝置 G:承載件 G1:承載件 G2:承載件 Q1:位置 P1:部位 P1':部位 M: drive device W: silicon chip S: sensing device D:Detection device G: Bearing part G1: Bearing part G2: Bearing part Q1: Location P1: Part P1': Part

圖1為本發明實施例的一種用於檢測矽片的系統的示意圖; 圖2為本發明實施例的一種用於檢測矽片的系統的工作圖; 圖3為本發明另一實施例的一種用於檢測矽片的系統的示意圖; 圖4為本發明另一實施例的一種用於檢測矽片的系統的工作圖。 Figure 1 is a schematic diagram of a system for detecting silicon wafers according to an embodiment of the present invention; Figure 2 is a working diagram of a system for detecting silicon wafers according to an embodiment of the present invention; Figure 3 is a schematic diagram of a system for detecting silicon wafers according to another embodiment of the present invention; FIG. 4 is a working diagram of a system for detecting silicon wafers according to another embodiment of the present invention.

M:驅動裝置 M: drive device

W:矽片 W: silicon chip

S:感測裝置 S: sensing device

D:檢測裝置 D:Detection device

G:承載件 G: Bearing part

Claims (10)

一種用於檢測矽片的系統,該系統包括: 多個承載件,用於通過與該矽片的相應的多個部位接觸而對該述矽片進行承載; 檢測裝置,用於通過相對於該矽片移動而對該矽片的不同部位的缺陷進行檢測; 感測裝置,用於感測該檢測裝置的位置並且當感測到該檢測裝置處於對該矽片的與相應承載件接觸的部位進行檢測的位置時生成第一指令信號; 驅動裝置,用於基於該第一指令信號使該相應承載件從與該矽片接觸的接觸位置移動至不與該矽片接觸的遠離位置,使得該矽片被該多個承載件中的除了該相應承載件以外的其他承載件承載。 A system for detecting silicon wafers, the system includes: A plurality of bearing members, used to carry the silicon chip by contacting corresponding multiple parts of the silicon chip; A detection device used to detect defects in different parts of the silicon wafer by moving relative to the silicon wafer; a sensing device, configured to sense the position of the detection device and generate a first command signal when it is sensed that the detection device is in a position for detecting the portion of the silicon chip that is in contact with the corresponding carrier; A driving device for moving the corresponding carrier from a contact position in contact with the silicon chip to a remote position not in contact with the silicon chip based on the first command signal, so that the silicon chip is removed from the plurality of carriers. The load is carried by other load-bearing members than the corresponding load-bearing member. 如請求項1所述之用於檢測矽片的系統,其中,該感測裝置還用於當感測到該檢測裝置處於對該矽片的不與該相應承載件接觸的部位進行檢測的位置時生成第二指令信號,該驅動裝置還用於基於該第二指令信號使該相應承載件從該遠離位置移動至該接觸位置。The system for detecting silicon wafers as described in claim 1, wherein the sensing device is also used to detect parts of the silicon wafer that are not in contact with the corresponding carrier when it is sensed that the detection device is in a position. When generating a second command signal, the driving device is also used to move the corresponding bearing member from the away position to the contact position based on the second command signal. 如請求項1或2所述之用於檢測矽片的系統,其中,該檢測裝置沿著被承載的該矽片的徑向移動,該多個承載件成對地設置,各對承載件中的兩個承載件之間的連接線彼此平行並且都垂直於該徑向,使得該檢測裝置同時對該矽片的與每對承載件中的兩個承載件接觸的部位進行檢測。The system for detecting silicon wafers as described in claim 1 or 2, wherein the detection device moves along the radial direction of the silicon wafer being carried, the plurality of carriers are arranged in pairs, and the carriers in each pair The connection lines between the two carriers are parallel to each other and perpendicular to the radial direction, so that the detection device simultaneously detects the portions of the silicon chip that are in contact with the two carriers in each pair of carriers. 如請求項3所述之用於檢測矽片的系統,其中,位於該徑向的同一側的該承載件在被承載的該矽片的周向上均勻分佈。The system for detecting silicon wafers as described in claim 3, wherein the carriers located on the same side of the radial direction are evenly distributed in the circumferential direction of the silicon wafer being carried. 如請求項3所述之用於檢測矽片的系統,其中,該感測裝置包括用於測量該檢測裝置與該徑向上的固定位置之間的距離的測距儀,以根據該距離獲得該檢測裝置的位置。The system for detecting silicon wafers as described in claim 3, wherein the sensing device includes a distance meter for measuring the distance between the detecting device and the fixed position in the radial direction, so as to obtain the distance based on the distance. The location of the detection device. 如請求項5所述之用於檢測矽片的系統,其中,該測距儀包括設置在該固定位置處的鐳射發射器和設置在該檢測裝置上以隨該檢測裝置一起移動的鐳射接收器。The system for detecting silicon wafers as described in claim 5, wherein the rangefinder includes a laser transmitter arranged at the fixed position and a laser receiver arranged on the detection device to move together with the detection device . 如請求項1所述之用於檢測矽片的系統,其中,該多個承載件通過接觸該矽片的背面的周緣對該矽片進行支承。The system for detecting silicon wafers as claimed in claim 1, wherein the plurality of carriers support the silicon wafer by contacting the periphery of the back side of the silicon wafer. 如請求項7所述之用於檢測矽片的系統,其中,該相應承載件沿著被支承的該矽片的徑向移動。The system for detecting silicon wafers as described in claim 7, wherein the corresponding bearing member moves along the radial direction of the supported silicon wafer. 如請求項1所述之用於檢測矽片的系統,其中,該檢測裝置包括分別在被承載的該矽片兩側移動以分別對該矽片的正面和背面進行檢測的正面檢測器和背面檢測器。The system for detecting silicon wafers as described in claim 1, wherein the detection device includes a front detector and a back side that move on both sides of the carried silicon wafer to respectively detect the front and back sides of the silicon wafer. detector. 如請求項1所述之用於檢測矽片的系統,其中,該檢測裝置為用於拍攝該矽片的圖像的相機。The system for detecting silicon wafers as described in claim 1, wherein the detection device is a camera used to take images of the silicon wafers.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201614751A (en) * 2014-10-06 2016-04-16 Disco Corp Wafer inspection method and wafer inspection apparatus
TW202006864A (en) * 2018-06-29 2020-02-01 台灣積體電路製造股份有限公司 Method for identifying robot arm responsible for wafer scratch

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60324656D1 (en) * 2003-01-15 2008-12-24 Negevtech Ltd Method and apparatus for fast on-line and electro-optical defect detection on wafers
FR2959864B1 (en) * 2010-05-06 2013-01-18 Altatech Semiconductor DEVICE AND METHOD FOR INSPECTING SEMICONDUCTOR MOVING PLATELETS.
CN103048297A (en) * 2011-10-16 2013-04-17 上海太阳能工程技术研究中心有限公司 Silicon wafer and silicon solar battery piece defect detecting method
CN109030509B (en) * 2018-07-02 2021-03-26 京东方科技集团股份有限公司 Detection device, color film repair equipment and detection method
CN211029905U (en) * 2020-06-11 2020-07-17 西安奕斯伟硅片技术有限公司 a load bearing structure
CN112595729B (en) * 2021-03-03 2021-06-04 惠州高视科技有限公司 Mini-LED wafer rapid detection system and method
CN215589200U (en) * 2021-12-08 2022-01-21 西安奕斯伟材料科技有限公司 Manipulator and system for clamping silicon wafers in silicon wafer box
CN115078402B (en) * 2022-06-15 2025-02-11 西安奕斯伟材料科技股份有限公司 System for detecting silicon wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201614751A (en) * 2014-10-06 2016-04-16 Disco Corp Wafer inspection method and wafer inspection apparatus
TW202006864A (en) * 2018-06-29 2020-02-01 台灣積體電路製造股份有限公司 Method for identifying robot arm responsible for wafer scratch

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