[go: up one dir, main page]

TWI812985B - Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame - Google Patents

Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame Download PDF

Info

Publication number
TWI812985B
TWI812985B TW110127725A TW110127725A TWI812985B TW I812985 B TWI812985 B TW I812985B TW 110127725 A TW110127725 A TW 110127725A TW 110127725 A TW110127725 A TW 110127725A TW I812985 B TWI812985 B TW I812985B
Authority
TW
Taiwan
Prior art keywords
mask
template
metal film
temperature
frame
Prior art date
Application number
TW110127725A
Other languages
Chinese (zh)
Other versions
TW202226640A (en
Inventor
李裕進
Original Assignee
南韓商奧魯姆材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商奧魯姆材料股份有限公司 filed Critical 南韓商奧魯姆材料股份有限公司
Publication of TW202226640A publication Critical patent/TW202226640A/en
Application granted granted Critical
Publication of TWI812985B publication Critical patent/TWI812985B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本發明涉及OLED像素形成用掩模、掩模支撐模板及框架一體型掩模的製造方法。根據本發明的OLED像素形成用掩模,其受掩模支撐模板支撐並附著在框架上,其中,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於採用預定設計值的掩模中從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm。The present invention relates to a method for manufacturing an OLED pixel forming mask, a mask supporting template, and a frame-integrated mask. A mask for OLED pixel formation according to the present invention is supported by a mask support template and attached to a frame, wherein the mask includes a mask unit formed with a plurality of mask patterns and a dummy portion around the mask unit, The mask has a pair of long sides and a pair of short sides. On any straight line parallel to the long or short sides of the mask, the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end is compared to In the mask using the predetermined design value, the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end is 0.1 μm to 20.0 μm larger.

Description

OLED像素形成用掩模、掩模支撐模板及框架一體型掩模的製造方法Method for manufacturing OLED pixel formation mask, mask support template and frame-integrated mask

發明領域Field of invention

本發明涉及OLED像素形成用掩模、掩模支撐模板及框架一體型掩模的製造方法。更詳細地,涉及一種可使掩模不發生變形且穩定地支撐並移動,且將掩模附著到框架上時通過減小掩模的變形提高位置精密度,從而能夠準確地對準(align)各掩模的OLED像素形成用掩模、掩模支撐模板及框架一體型掩模的製造方法。The present invention relates to a method for manufacturing an OLED pixel forming mask, a mask supporting template, and a frame-integrated mask. More specifically, the present invention relates to a device that can stably support and move a mask without deformation and improve positioning accuracy by reducing the deformation of the mask when attaching the mask to a frame, thereby enabling accurate alignment. A method for manufacturing an OLED pixel forming mask, a mask support template, and a frame-integrated mask for each mask.

發明背景Background of the invention

作為OLED製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask,精細金屬掩模)方法,該方法將薄膜形式的金屬掩模(Shadow Mask,陰影掩模)緊貼到基板且在所需位置上蒸鍍有機物。As a technology for forming pixels in the OLED manufacturing process, the FMM (Fine Metal Mask) method is mainly used. This method attaches a metal mask (Shadow Mask) in the form of a thin film to the substrate and places it where required. Evaporate organic matter on the position.

在現有的OLED製造工藝中,將掩模製造成條狀、板狀等後,將掩模焊接固定到OLED像素蒸鍍框架上並使用。一個掩模上可以具有與一個顯示器對應的多個單元。另外,為了製造大面積OLED,可將多個掩模固定於OLED像素蒸鍍框架,在固定於框架的過程中,拉伸各個掩模,以使其變得平坦。調節拉伸力以使掩模的整體部分變得平坦是非常困難的作業。尤其為了一邊使各單元都平坦化且一邊對準尺寸為數~數十μm的掩模圖案,需要進行如下高難度作業:一邊細微地調節施加於掩模各側的拉伸力,一邊即時地確認對準狀態。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel evaporation frame and used. One mask can have multiple cells corresponding to one display. In addition, in order to manufacture large-area OLEDs, multiple masks can be fixed to the OLED pixel evaporation frame. During the process of fixing to the frame, each mask is stretched to become flat. Adjusting the tensile force to flatten an entire portion of the mask is a very difficult task. In particular, in order to align a mask pattern with a size of several to tens of μm while flattening each unit, it is necessary to perform the following difficult operations: finely adjusting the tensile force applied to each side of the mask and checking in real time. Alignment status.

儘管如此,在將多個掩模固定於一個框架的過程中,仍然存在掩模之間及掩模單元之間對準不好的問題。另外,在將掩模焊接固定於框架的過程中,掩模膜的厚度過薄且面積大,因此存在掩模因荷重而下垂或者扭曲的問題;由於焊接過程中在焊接部分產生的皺紋、毛邊(burr)等,導致掩模單元的對準不準的問題等。Nevertheless, in the process of fixing multiple masks to a frame, there is still a problem of poor alignment between masks and between mask units. In addition, during the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem that the mask sag or twist due to the load; wrinkles and burrs are generated in the welded parts during the welding process. (burr), etc., causing misalignment of the mask unit, etc.

在超高畫質的OLED中,現有QHD畫質為500-600PPI(pixel per inch,每英寸像素),像素的尺寸達到約30-50μm,而4K UHD、8K UHD高畫質具有比其更高的~860PPI、~1600PPI等的解析度。如此,考慮到超高畫質的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm左右,超出這一誤差將導致產品的不良,所以產率可能極低。因此,需要開發能夠防止掩模的下垂或者扭曲等變形並使對準精確的技術以及將掩模固定於框架的技術等。Among ultra-high-definition OLEDs, the existing QHD picture quality is 500-600PPI (pixels per inch, pixels per inch), and the pixel size reaches about 30-50 μm, while 4K UHD and 8K UHD high-quality pictures have higher Resolutions of ~860PPI, ~1600PPI, etc. In this way, considering the pixel size of ultra-high-definition OLEDs, the alignment error between units needs to be reduced to about a few μm. Exceeding this error will lead to product defects, so the yield may be extremely low. Therefore, there is a need to develop technology that can prevent deformation such as sagging or twisting of the mask and achieve accurate alignment, as well as technology that can fix the mask to the frame.

[技術問題][Technical Issue]

因此,本發明為了解決如上所述的現有技術的各種問題而提出,其目的在於提供一種可使掩模不發生變形且穩定地得到支撐並移動,而且可防止掩模發生下垂或者扭曲等變形,並可準確地對準的OLED像素形成用掩模、掩模支撐模板及框架一體型掩模製造方法。Therefore, the present invention has been proposed in order to solve the various problems of the prior art as described above, and its object is to provide a mask that can be stably supported and moved without deformation, and can prevent the mask from deforming such as sagging or twisting. A method for manufacturing an integrated mask, a mask support template, and a frame for forming OLED pixels that can be accurately aligned.

此外,本發明的目的在於提供一種可明顯縮短製造時間並顯著提高產率的框架一體型掩模的製造方法。 [技術方案] In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that can significantly shorten the manufacturing time and significantly improve the productivity. [Technical solution]

本發明的上述目的通過OLED像素形成用掩模來實現,所述OLED像素形成用掩模受掩模支撐模板支撐並附著在框架上,其中,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於採用預定設計值的掩模中從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm。The above object of the present invention is achieved by a mask for forming OLED pixels, which is supported by a mask supporting template and attached to a frame, wherein the mask includes a mask formed with a plurality of mask patterns. The mask unit and the dummy part around the mask unit, the mask has a pair of long sides and a pair of short sides, on any straight line parallel to the long side or short side of the mask, from the mask pattern arranged at one end to the The distance of the mask pattern at the other end is 0.1 μm to 20.0 μm larger than the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end in the mask using the predetermined design value.

將掩模沿長邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於長邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為A,將掩模沿短邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於短邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為B,對於採用預定設計值的掩模的情況,將掩模沿長邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於長邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為C,將掩模沿短邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於短邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為D,此時A-C的值和B-D的值可分別為正數。When the mask is divided into three equal areas along the long side, any straight line is extended in each area in a direction perpendicular to the long side, and any straight line is drawn from the mask pattern arranged at one end to the mask pattern arranged at the other end. The average distance of the mold pattern is set to A. When the mask is divided into three equal areas along the short side direction, any straight line is extended in the direction perpendicular to the short side in each area, and any straight line is arranged from one end to the other. The average distance from the mask pattern to the mask pattern arranged at the other end is set to B. In the case of using a mask with a predetermined design value, when the mask is equally divided into three areas along the length direction, in each area Make any straight line extend in the direction perpendicular to the long side, set the average distance on any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end to be C, and divide the mask equally along the short side direction. When there are three areas, extend any straight line in the direction perpendicular to the short side in each area, and set the average distance on any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end as D , at this time the values of A-C and B-D can be positive numbers respectively.

A-C的值可為0.1μm至20.0μm,B-D的值可為0.1μm至15.0μm。The values of A-C may range from 0.1 μm to 20.0 μm, and the values of B-D may range from 0.1 μm to 15.0 μm.

掩模的熱膨脹係數可至少大於1,且模板的熱膨脹係數可小於1(大於0)。The thermal expansion coefficient of the mask may be at least greater than 1, and the thermal expansion coefficient of the template may be less than 1 (greater than 0).

受掩模支撐模板支撐的OLED像素形成用掩模可通過以下步驟製造:(a)準備一面形成有臨時黏合部的模板;(b)將工藝溫度上升至使臨時黏合部的黏合強度成為0至5kgf/cm 2的溫度並將掩模金屬膜接觸到模板上;(c)將工藝溫度下降至使臨時黏合部的黏合強度至少大於5kgf/cm 2的溫度並將掩模金屬膜黏合到模板上;(d)將工藝溫度下降至常溫;(e)通過在掩模金屬膜上形成掩模圖案來製造掩模。 A mask for OLED pixel formation supported by a mask supporting template can be manufactured by the following steps: (a) preparing a template with a temporary adhesive portion formed on one side; (b) raising the process temperature to a point where the adhesive strength of the temporary adhesive portion becomes 0 to a temperature of 5kgf/ cm2 and contact the mask metal film to the template; (c) lower the process temperature to a temperature such that the bonding strength of the temporary bonding part is at least greater than 5kgf/ cm2 and bond the mask metal film to the template ; (d) Lower the process temperature to normal temperature; (e) Manufacture the mask by forming a mask pattern on the mask metal film.

步驟(d)可包括以下步驟:(d1)將工藝溫度下降至低於常溫;(d2)將工藝溫度下降至常溫。Step (d) may include the following steps: (d1) lowering the process temperature to lower than normal temperature; (d2) lowering the process temperature to normal temperature.

步驟(b)中可將工藝溫度上升至110℃至200℃,步驟(c)中可將工藝溫度下降至低於步驟(b)的工藝溫度且高於常溫。In step (b), the process temperature can be raised to 110°C to 200°C, and in step (c), the process temperature can be lowered to lower than the process temperature of step (b) and higher than normal temperature.

步驟(b)中掩模金屬膜以與模板之間無黏合力的狀態下,相較於模板向側面進一步延伸,步驟(c)中掩模金屬膜以延伸的狀態黏合到模板上。In step (b), the mask metal film extends further to the side than the template when there is no adhesive force between it and the template. In step (c), the mask metal film adheres to the template in an extended state.

步驟(b)中工藝溫度越是提高,掩模金屬膜能夠以延伸程度越是變大的狀態黏合並固定到模板上。As the process temperature in step (b) increases, the mask metal film can be bonded and fixed to the template in a state of greater extension.

此外,本發明的目的可通過OLED像素形成用掩模來實現,所述OLED像素形成用掩模受掩模支撐模板支撐並附著在框架上,其中,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於通過以下步驟製造的掩模中從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm,所述步驟具體為:(1)準備一面形成有臨時黏合部的模板;(2)將工藝溫度上升至使臨時黏合部至少黏合掩模金屬膜和模板的溫度並將掩模金屬膜黏合到模板上;(3)將工藝溫度下降至常溫;(4)通過在掩模金屬膜上形成掩模圖案來製造掩模。In addition, the object of the present invention can be achieved by a mask for forming OLED pixels, which is supported by a mask supporting template and attached to the frame, wherein the mask includes a mask formed with a plurality of mask patterns The mask unit and the dummy part around the mask unit, the mask has a pair of long sides and a pair of short sides, on any straight line parallel to the long side or short side of the mask, from the mask pattern arranged at one end to The distance of the mask pattern arranged at the other end is 0.1 μm to 20.0 μm larger than the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end in the mask manufactured by the steps of Specifically: (1) Prepare a template with a temporary adhesive portion formed on one side; (2) Raise the process temperature to a temperature where the temporary adhesive portion at least adheres to the mask metal film and the template, and bond the mask metal film to the template; ( 3) Lower the process temperature to normal temperature; (4) Manufacture the mask by forming a mask pattern on the mask metal film.

掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,將掩模沿長邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於長邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為A,將掩模沿短邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於短邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為B,對於通過以下步驟:(1)準備一面形成有臨時黏合部的模板;(2)將工藝溫度上升至使臨時黏合部至少黏合掩模金屬膜和模板的溫度並將掩模金屬膜黏合到模板上;(3)將工藝溫度下降至常溫;(4)通過在掩模金屬膜上形成掩模圖案來製造掩模;製造的掩模情況,將掩模沿長邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於長邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為C,將掩模沿短邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於短邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為D,此時A-C的值和B-D的值可分別為正數。The mask includes a mask unit formed with a plurality of mask patterns and a dummy portion around the mask unit. The mask has a pair of long sides and a pair of short sides. When the mask is equally divided into three areas along the long side. , extend any straight line in the direction perpendicular to the long side in each area, set the average distance on any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end to be A, and set the mask along the When the short side direction is divided into three equal regions, any straight line in each area is extended in a direction perpendicular to the short side, and the distance on any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end is The average value is set to B. For the following steps: (1) Prepare a template with a temporary adhesive portion formed on one side; (2) Raise the process temperature to a temperature where the temporary adhesive portion at least adheres to the mask metal film and the template and place the mask The metal film is bonded to the template; (3) the process temperature is lowered to normal temperature; (4) the mask is manufactured by forming a mask pattern on the mask metal film; in the case of the manufactured mask, the mask is placed along the long side direction, etc. When divided into three areas, any straight line is extended in the direction perpendicular to the long side in each area, and the average distance on any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end is set to C. When the mask is divided into three equal areas along the short side, extend any straight line in each area in a direction perpendicular to the short side, and extend any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end. The average distance of the mask pattern is set to D. At this time, the values of A-C and B-D can be positive numbers respectively.

此外,本發明的上述目的通過掩模支撐模板來實現,該模板用於支撐OLED像素形成用掩模並將該掩模對應到框架上,該掩模支撐模板包括:模板;臨時黏合部,其形成在模板上;以及掩模,其通過夾設臨時黏合部黏合到模板上且形成有多個掩模圖案,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於採用預定設計值的掩模中從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm。In addition, the above object of the present invention is achieved by a mask supporting template, which is used to support the OLED pixel forming mask and correspond the mask to the frame. The mask supporting template includes: a template; a temporary adhesive portion, formed on the template; and a mask, which is bonded to the template by sandwiching a temporary adhesive portion and formed with a plurality of mask patterns, and the mask includes a mask unit formed with a plurality of mask patterns and a mask unit around the mask unit. Dummy part, the mask has a pair of long sides and a pair of short sides, on any straight line parallel to the long side or short side of the mask, the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end Compared with a mask using predetermined design values, the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end is 0.1 μm to 20.0 μm larger.

此外,本發明的目的可通過掩模支撐模板來實現,所述掩模支撐模板用於支撐OLED像素形成有掩模並將該掩模對應到框架上,該掩模支撐模板包括:模板;臨時黏合部,其形成在模板上;以及掩模,其通過夾設臨時黏合部黏合到模板上且形成有多個掩模圖案,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於通過以下步驟製造的掩模中從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm,所述步驟具體為:(1)準備一面形成有臨時黏合部的模板;(2)將工藝溫度上升至使臨時黏合部至少黏合掩模金屬膜和模板的溫度並將掩模金屬膜黏合到模板上;(3)將工藝溫度下降至常溫;(4)通過在掩模金屬膜上形成掩模圖案來製造掩模。In addition, the object of the present invention can be achieved by a mask support template, which is used to support the OLED pixels formed with a mask and correspond the mask to the frame. The mask support template includes: a template; a temporary an adhesive portion formed on the template; and a mask, which is bonded to the template by interposing a temporary adhesive portion and formed with a plurality of mask patterns, and the mask includes a mask unit formed with a plurality of mask patterns and a mask The dummy part around the mold unit. The mask has a pair of long sides and a pair of short sides. On any straight line parallel to the long or short sides of the mask, from the mask pattern arranged at one end to the mask arranged at the other end. The distance of the mold pattern is 0.1 μm to 20.0 μm larger than the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end in the mask manufactured by the following steps, specifically: (1) Prepare a template with a temporary adhesive portion formed on one side; (2) Raise the process temperature to a temperature where the temporary adhesive portion at least adheres to the mask metal film and the template and bond the mask metal film to the template; (3) Lower the process temperature to normal temperature; (4) The mask is manufactured by forming a mask pattern on the mask metal film.

此外,本發明的上述目的通過框架一體型掩模的製造方法來實現,該框架一體型掩模由至少一個掩模及用於支撐掩模的框架一體形成,其中,該方法可包括以下步驟:(a)將請求項12或者13所述的掩模支撐模板裝載到具有至少一個掩模單元區域的框架上,並將掩模對應到框架的掩模單元區域;以及(b)將掩模附著到框架上。 [有益效果] In addition, the above object of the present invention is achieved by a method for manufacturing a frame-integrated mask, which is integrally formed by at least one mask and a frame for supporting the mask, wherein the method may include the following steps: (a) loading the mask support template described in claim 12 or 13 onto a frame having at least one mask unit area, and corresponding the mask to the mask unit area of the frame; and (b) attaching the mask onto the frame. [beneficial effect]

根據具有如上所述結構的本發明,具有可使掩模不發生變形且穩定地得到支撐並移動,而且可防止掩模發生下垂或者扭曲等變形並可準確地對準的效果。According to the present invention having the above-mentioned structure, the mask can be supported and moved stably without deformation, and the mask can be prevented from deformation such as sagging or twisting and can be accurately aligned.

另外,根據本發明,具有能夠明顯縮短製造時間並顯著提高產率的效果。In addition, according to the present invention, the manufacturing time can be significantly shortened and the productivity can be significantly improved.

具體實施方式Detailed implementation

下面,參照附圖詳細說明本發明,所述附圖用於圖示作為本發明可實施的特定實施例的示例。對這些實施例進行詳細說明,以使本領域技術人員能夠充分地實施本發明。本發明的各種實施例應理解為互為不同但不相排斥。例如,在此記載的特定形狀、結構及特性可將一實施例在不超出本發明的精神及範圍的情況下實現為其他實施例。另外,公開的每一個實施例中的個別組成要素的位置或佈置應理解為在不超出本發明精神及範圍情況下可進行變更。因此,以下詳細說明並非用於限定本發明,只要能適當地說明,本發明的範圍僅由所附的申請專利範圍和與其等同的所有範圍限定。附圖中類似的附圖標記通過各個方面指代相同或類似的功能,為了方便起見,長度、面積及厚度等及其形態還可誇大表示。The present invention will be described in detail below with reference to the accompanying drawings, which illustrate examples of specific embodiments in which the invention can be implemented. These embodiments are described in detail to fully enable those skilled in the art to practice the invention. The various embodiments of the invention are to be understood as being different from each other but not mutually exclusive. For example, the specific shapes, structures, and characteristics described herein may be used to implement one embodiment into other embodiments without departing from the spirit and scope of the invention. In addition, it should be understood that the position or arrangement of individual components in each disclosed embodiment can be changed without departing from the spirit and scope of the invention. Therefore, the following detailed description is not intended to limit the present invention. As long as it can be properly explained, the scope of the present invention is limited only by the appended patent scope and all scopes equivalent thereto. Similar reference numerals in the drawings refer to the same or similar functions in various aspects. For convenience, the length, area, thickness, etc. and their shapes may also be exaggerated.

下面,為了能夠使本領域技術人員容易實施本發明,參照附圖對本發明涉及的優選實施例進行詳細說明。In order to enable those skilled in the art to easily implement the present invention, preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

圖1是現有的將掩模附著到框架的過程的示意圖。Figure 1 is a schematic diagram of the existing process of attaching a mask to a frame.

現有的掩模10為條型(Stick-Type)或者板型(Plate-Type),圖1的條型掩模10可以將條的兩側焊接固定到OLED像素蒸鍍框架上並使用。掩模10的主體(Body,或者掩模膜11)具有多個顯示單元C。一個單元C與智慧手機等的一個顯示器對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。The existing mask 10 is a stick-type or a plate-type. The stick-type mask 10 in Figure 1 can be used by welding and fixing both sides of the strip to the OLED pixel evaporation frame. The body (or mask film 11) of the mask 10 has a plurality of display units C. One unit C corresponds to one display of a smartphone or the like. A pixel pattern P is formed in the cell C so as to correspond to each pixel of the display.

參照圖1的(a),沿著條型掩模10的長軸方向施加拉伸力F1-F2,並在展開的狀態下將條型掩模10裝載在方框形狀的框架20上。條型掩模10的單元C1-C6將位於框架20的框內部空白區域部分。Referring to FIG. 1( a ), tensile force F1 - F2 is applied along the long axis direction of the strip mask 10 , and the strip mask 10 is loaded on the square frame 20 in an unfolded state. The cells C1 - C6 of the strip mask 10 will be located in the blank area inside the frame 20 .

參照圖1的(b),微調施加到條型掩模10各側的拉伸力F1-F2的同時進行對準,之後通過焊接W條型掩模10側面的一部分,使條型掩模10和框架20彼此連接。圖1的(c)示出彼此連接的條型掩模10和框架的側截面。Referring to (b) of FIG. 1 , alignment is performed while finely adjusting the tensile force F1 - F2 applied to each side of the strip mask 10 , and then a part of the side surface of the strip mask 10 is welded to make the strip mask 10 and frame 20 are connected to each other. (c) of FIG. 1 shows a side section of the strip mask 10 and the frame connected to each other.

儘管微調施加到條型掩模10各側的拉伸力F1-F2,但是仍發生掩模單元C1-C3彼此之間對準不好的問題。例如,單元C1-C6的圖案P之間的距離彼此不同或者圖案P歪斜。由於條型掩模10具有包括多個單元C1-C6的大面積,並且具有數十μm的非常薄的厚度,所以容易因荷重而下垂或者扭曲。另外,一邊調節拉伸力F1-F2使各單元C1-C6全部變得平坦,一邊通過顯微鏡即時確認各單元C1-C6之間的對準狀態是非常困難的作業。但是為了避免尺寸為數μm至數十μm的掩模圖案P對超高畫質OLED的像素工藝造成壞影響,對準誤差優選不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Despite fine-tuning the tensile forces F1 - F2 applied to each side of the strip mask 10 , the problem of poor alignment of the mask units C1 - C3 with each other still occurs. For example, the distances between the patterns P of the cells C1 to C6 are different from each other or the patterns P are skewed. Since the stripe mask 10 has a large area including a plurality of cells C1 to C6 and has a very thin thickness of several tens of μm, it is prone to sagging or distortion due to load. In addition, it is a very difficult task to instantly confirm the alignment status between the units C1 to C6 through a microscope while adjusting the tensile force F1 to F2 so that all units C1 to C6 are flattened. However, in order to avoid the negative impact of the mask pattern P with a size of several μm to tens of μm on the pixel process of ultra-high-definition OLED, the alignment error is preferably no more than 3 μm. The alignment error between such adjacent units is called pixel position accuracy (PPA).

進一步而言,將各條型掩模10分別連接到一個框架20,同時使多個條型掩模10之間及條型掩模10的多個單元C-C6之間的對準狀態精確是非常困難的作業,而且只會增加基於對準的工藝時間,從而成為降低生產效率的重要原因。Furthermore, each strip mask 10 is connected to a frame 20 respectively, and at the same time, the alignment state between the multiple strip masks 10 and between the multiple units C-C6 of the strip mask 10 is accurately It is a very difficult operation and will only increase the process time based on alignment, thus becoming an important reason for reducing production efficiency.

另外,將條型掩模10連接固定到框架20後,施加到條型掩模10的拉伸力F1-F2會反向地作用於框架20。該張力會導致框架20細微變形,而且會發生多個單元C-C6間的對準狀態扭曲的問題。In addition, after the strip mask 10 is connected and fixed to the frame 20 , the tensile force F1 - F2 applied to the strip mask 10 will act in reverse on the frame 20 . This tension may cause slight deformation of the frame 20, and may cause distortion of the alignment between the plurality of units C-C6.

鑒於此,本發明提出能夠使掩模100與框架200形成一體型結構的框架200及框架一體型掩模。與框架200形成一體的掩模100不僅可以防止下垂或者扭曲等變形,而且可以與框架200準確地對準。In view of this, the present invention proposes a frame 200 and a frame-integrated mask that enable the mask 100 and the frame 200 to form an integrated structure. The mask 100 integrated with the frame 200 can not only prevent deformation such as sagging or twisting, but also can be accurately aligned with the frame 200 .

圖2是根據本發明一實施例的框架一體型掩模的主視圖[圖2的(a)]及側截面圖[圖2的(b)]。FIG. 2 is a front view [FIG. 2(a)] and a side cross-sectional view [FIG. 2(b)] of a frame-integrated mask according to an embodiment of the present invention.

本說明書雖然對框架一體型掩模的配置進行說明,但框架一體型掩模的結構、製造過程可理解為包括韓國發明專利申請第2018-0016186號的全部內容。Although this specification describes the configuration of the frame-integrated mask, the structure and manufacturing process of the frame-integrated mask can be understood to include the entire contents of Korean Invention Patent Application No. 2018-0016186.

參照圖2,框架一體型掩模可以包括多個掩模100及一個框架200。換而言之,是將多個掩模100分別附著至框架200的形態。下面,為了便於說明,以四角形狀的掩模100為例進行說明,但是掩模100附著到框架200之前,可以是兩側具備用於夾持的突出部的條型掩模形狀,附著到框架200上後可以去除突出部。Referring to FIG. 2 , the frame-integrated mask may include multiple masks 100 and a frame 200 . In other words, the plurality of masks 100 are respectively attached to the frame 200 . In the following, for convenience of explanation, the quadrangular mask 100 will be described as an example. However, before the mask 100 is attached to the frame 200, it may be in the shape of a strip mask with protrusions for clamping on both sides, and the mask 100 may be attached to the frame. 200 can be used to remove the protrusions.

各掩模100上形成有多個掩模圖案P,一個掩模100上可以形成有一個單元C。一個掩模單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each mask 100, and one cell C can be formed on one mask 100. One mask unit C can correspond to one display of a smartphone or the like.

掩模100也可以為因瓦合金(invar)、超因瓦合金(super invar)、鎳(Ni)、鎳-鈷(Ni-Co)等材料。掩模100可使用由軋製(rolling)工藝或者電鑄(electroforming)生成的金屬片材(sheet)。The mask 100 may also be made of invar, super invar, nickel (Ni), nickel-cobalt (Ni-Co), or other materials. The mask 100 may use a metal sheet produced by a rolling process or electroforming.

框架200可以以附著多個掩模100的形式形成。考慮到熱變形,框架200優選由與掩模具有相同熱膨脹係數的因瓦合金、超級因瓦合金、鎳、鎳-鈷等材料形成。框架200可包括大致四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以為中空形態。The frame 200 may be formed in a form in which a plurality of masks 100 are attached. Considering thermal deformation, the frame 200 is preferably formed of materials such as Invar, Super Invar, nickel, nickel-cobalt, etc. that have the same thermal expansion coefficient as the mask. The frame 200 may include a substantially quadrangular or square frame-shaped edge frame portion 210 . The inside of the edge frame part 210 may be hollow.

另外,框架200具備多個掩模單元區域CR,並且可以包括與邊緣框架部210連接的掩模單元片材部220。掩模單元片材部220可以由邊緣片材部221及第一柵格片材部223、第二柵格片材部225組成。邊緣片材部221及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各部分,它們彼此形成一體。In addition, the frame 200 is provided with a plurality of mask unit areas CR, and may include a mask unit sheet portion 220 connected to the edge frame portion 210 . The mask unit sheet part 220 may be composed of an edge sheet part 221 and a first grid sheet part 223 and a second grid sheet part 225 . The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are portions divided on the same sheet, and they are integrated with each other.

邊緣框架部210的厚度可以大於掩模單元片材部220的厚度,可以以數mm至數十cm的厚度形成。掩模單元片材部220的厚度雖然薄於邊緣框架部210的厚度,但比掩模100厚,可約為0.1mm至1mm的厚度。第一柵格片材部223、第二柵格片材部225的寬度可以約為1-5mm。The thickness of the edge frame part 210 may be greater than the thickness of the mask unit sheet part 220, and may be formed with a thickness of several mm to several tens of centimeters. Although the thickness of the mask unit sheet portion 220 is thinner than that of the edge frame portion 210 , it is thicker than the mask 100 , and may be approximately 0.1 mm to 1 mm thick. The widths of the first grid sheet part 223 and the second grid sheet part 225 may be about 1-5 mm.

在平面片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個掩模單元區域CR(CR11-CR56)。In the planar sheet, in addition to the areas occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225, a plurality of mask unit areas CR (CR11-CR56) may be provided.

掩模200具備多個掩模單元區域CR,各掩模100可以各掩模單元C與各掩模單元區域CR分別對應的方式附著。掩模單元C與框架200的掩模單元區域CR對應,虛設部的局部或者全部可以附著到框架200(掩模單元片材部220)上。因此,掩模100和框架200可以形成一體型結構。The mask 200 includes a plurality of mask unit areas CR, and each mask 100 can be attached so that each mask unit C corresponds to each mask unit area CR. The mask unit C corresponds to the mask unit region CR of the frame 200, and part or all of the dummy portion may be attached to the frame 200 (mask unit sheet portion 220). Therefore, the mask 100 and the frame 200 may form an integrated structure.

圖3是根據本發明的一實施例的掩模100的示意圖。Figure 3 is a schematic diagram of a mask 100 according to an embodiment of the present invention.

掩模100可包括形成有多個掩模圖案P的掩模單元C和掩模單元C周圍的虛設部DM。可利用軋製工藝、電鑄等生成的金屬片材製造掩模100,掩模100中可形成有一個單元C。虛設部DM與除單元C以外的掩模膜110(掩模金屬膜110)部分對應,且可以只包括掩模膜110,或者包括形成有類似於掩模圖案P形態的預定的虛設部圖案的掩模膜110。虛設部DM對應掩模100的邊緣且虛設部DM的局部或者全部可附著在框架200(掩模單元片材部220)。The mask 100 may include a mask unit C in which a plurality of mask patterns P are formed and a dummy portion DM around the mask unit C. The mask 100 can be manufactured using a metal sheet produced by a rolling process, electroforming, etc., and one unit C can be formed in the mask 100 . The dummy portion DM corresponds to a portion of the mask film 110 (mask metal film 110) other than the cell C, and may include only the mask film 110, or may include a predetermined dummy portion pattern formed with a shape similar to the mask pattern P Mask film 110. The dummy part DM corresponds to the edge of the mask 100 and part or all of the dummy part DM may be attached to the frame 200 (mask unit sheet part 220).

掩模圖案P的寬度可小於40μm,而且掩模100的厚度可約為5-20μm。由於框架200具備多個掩模單元區域CR(CR11-CR56),因此也可具備多個掩模100,所述掩模100具有對應每個掩模單元區域CR(CR11-CR56)的掩模單元C(C11-C56)。The width of the mask pattern P may be less than 40 μm, and the thickness of the mask 100 may be about 5-20 μm. Since the frame 200 is provided with a plurality of mask unit areas CR (CR11-CR56), it may also be provided with a plurality of masks 100 having mask units corresponding to each mask unit area CR (CR11-CR56). C(C11-C56).

參照圖4的(a),可提供模板50(template)。模板50是一種媒介,其一面上附著有掩模100並以支撐掩模100的狀態使掩模100移動。模板50的一面優選為平坦面以支撐並搬運平坦的掩模100。中心部50a可對應掩模金屬膜110的掩模單元C,邊緣部50b可對應掩模金屬膜110的虛設部DM。為了能夠整體上支撐掩模金屬膜110,模板50為面積大於掩模金屬膜110的平坦形狀。Referring to (a) of Figure 4, a template 50 (template) may be provided. The template 50 is a medium to which the mask 100 is attached on one side and moves the mask 100 while supporting the mask 100 . One side of the template 50 is preferably a flat surface to support and transport the flat mask 100 . The central part 50a may correspond to the mask unit C of the mask metal film 110, and the edge part 50b may correspond to the dummy part DM of the mask metal film 110. In order to support the mask metal film 110 as a whole, the template 50 has a flat shape with an area larger than the mask metal film 110 .

為了使從模板50的上部照射的雷射L能夠到達掩模100的焊接部WP(執行焊接的區域),模板50上可形成有雷射通過孔51。雷射通過孔51能夠以與焊接部WP的位置和數量對應的方式形成在模板50上。由於在掩模100的邊緣或者虛設部DM部分上以預定的間隔佈置多個焊接部WP,因此與之對應地也可以以預定間隔形成多個雷射通過孔51。作為一示例,由於在掩模100的兩側(左側/右側)虛設部DM部分上以預定間隔佈置多個焊接部WP,因此雷射通過孔51也可以在模板50的兩側(左側/右側)以預定間隔形成多個。In order that the laser L irradiated from the upper part of the template 50 can reach the welding part WP (area where welding is performed) of the mask 100 , a laser passage hole 51 may be formed in the template 50 . The laser passage holes 51 can be formed on the template 50 in a manner corresponding to the position and number of the welding portions WP. Since the plurality of welding portions WP are arranged at predetermined intervals on the edge of the mask 100 or the dummy portion DM portion, a plurality of laser passage holes 51 may be formed at predetermined intervals accordingly. As an example, since a plurality of welding portions WP are arranged at predetermined intervals on both sides (left/right side) of the dummy portion DM portion of the mask 100 , the laser passage hole 51 may also be provided on both sides (left/right side) of the template 50 ) are formed into multiple at predetermined intervals.

雷射通過孔51的位置和數量不必一定與焊接部WP的位置和數量對應。例如,也可以僅對部分雷射通過孔51照射雷射L以進行焊接。此外,不與焊接部WP對應的部分雷射通過孔51在對準掩模100與模板50時也可作為對準標記而使用。如果模板50的材料對雷射L透明,則也可以不形成雷射通過孔51。The position and number of the laser passage holes 51 do not necessarily correspond to the position and number of the welding portions WP. For example, only part of the laser passage hole 51 may be irradiated with the laser L to perform welding. In addition, the portion of the laser passage hole 51 that does not correspond to the welding portion WP can also be used as an alignment mark when aligning the mask 100 and the template 50 . If the material of the template 50 is transparent to the laser L, the laser passage hole 51 does not need to be formed.

模板50的一面可形成臨時黏合部55。掩模100附著到框架200之前,臨時黏合部55可使掩模100(或者掩模金屬膜110)臨時附著在模板50的一面並支撐在模板50上。A temporary bonding portion 55 can be formed on one side of the template 50 . Before the mask 100 is attached to the frame 200 , the temporary adhesive portion 55 allows the mask 100 (or the mask metal film 110 ) to be temporarily attached to one side of the template 50 and supported on the template 50 .

臨時黏合部55可使用基於加熱可分離的黏合劑、基於照射UV可分離的黏合劑。The temporary adhesive portion 55 may use an adhesive detachable by heating or an adhesive detachable by UV irradiation.

作為一示例,臨時黏合部55可使用液蠟(liquid wax)。液蠟可使用與半導體晶圓的拋光步驟等中使用的相同的蠟,其類型沒有特別限制。作為主要用於控制與維持力有關的黏合力、耐衝擊性等的樹脂成分,液蠟可包括如丙烯酸、醋酸乙烯酯,尼龍及各種聚合物的物質及溶劑。作為一示例,臨時黏合部55可使用包括作為樹脂成分的丁腈橡膠(ABR,Acrylonitrile butadiene rubber)和作為溶劑成分的n-丙醇的SKYLIQUIDABR-4016。在臨時黏合部55上使用旋塗方法形成液蠟。As an example, the temporary adhesive portion 55 may use liquid wax. The liquid wax can use the same wax used in the polishing step of a semiconductor wafer, etc., and its type is not particularly limited. As a resin component mainly used to control adhesion, impact resistance, etc. related to maintaining force, liquid wax can include substances and solvents such as acrylic acid, vinyl acetate, nylon and various polymers. As an example, SKYLIQUIDABR-4016 including Acrylonitrile butadiene rubber (ABR) as a resin component and n-propanol as a solvent component can be used for the temporary adhesive portion 55 . A spin coating method is used to form liquid wax on the temporary bonding portion 55 .

作為液蠟的臨時黏合部55在高於85℃-100℃的溫度下黏性下降,而在低於85℃的溫度下黏性增加,一部分被固化成固體,從而可將掩模金屬膜110與模板50固定黏合。The viscosity of the temporary adhesive portion 55 as liquid wax decreases at temperatures above 85°C to 100°C, and increases at temperatures below 85°C, and a part of it is solidified, so that the mask metal film 110 can be Fixed and glued to the template 50.

其次,參照圖4的(b),可以在模板50上黏合掩模金屬膜110。可以將液蠟加熱到85℃以上,並將掩模金屬膜110接觸到模板50,之後使掩模金屬膜110與模板50通過滾軸之間以進行黏合。Next, referring to (b) of FIG. 4 , the mask metal film 110 can be bonded to the template 50 . The liquid wax can be heated to above 85° C., and the mask metal film 110 is brought into contact with the template 50 , and then the mask metal film 110 and the template 50 are passed between rollers for bonding.

根據一實施例,在約120℃下對模板50執行60秒的烘焙(baking),從而使臨時黏合部55的溶劑氣化,之後可馬上進行掩模金屬膜層壓(lamination)工藝。層壓通過在一面上形成有臨時黏合部55的模板50上裝載掩模金屬膜110並使其通過約100℃的上部滾軸(roll)和約0℃的下部滾軸之間來執行。其結果,掩模金屬膜110可通過夾設臨時黏合部55與模板50接觸。According to one embodiment, the template 50 is baked at approximately 120° C. for 60 seconds to vaporize the solvent in the temporary bonding portion 55 , and the mask metal film lamination process can be performed immediately thereafter. Lamination is performed by loading the mask metal film 110 on the template 50 having the temporary adhesive portion 55 formed on one side and passing it between an upper roll at about 100°C and a lower roll at about 0°C. As a result, the mask metal film 110 can be in contact with the template 50 with the temporary adhesive portion 55 interposed therebetween.

將掩模金屬膜110黏合到模板50之後,也可以對掩模金屬膜110的一面進行平坦化。由軋製工藝製造的掩模金屬膜110可通過平坦化工藝縮減其厚度。此外,還可以對通過電鑄工藝制得的掩模金屬膜110進行平坦化工藝,以此控制其表面特性、厚度。另外,也可以將掩模金屬膜110黏合到模板50之前,對掩模金屬膜110進行平坦化工藝。掩模金屬膜110的厚度可約為5μm至20μm。After the mask metal film 110 is bonded to the template 50 , one side of the mask metal film 110 may also be planarized. The thickness of the mask metal film 110 produced by the rolling process can be reduced through the planarization process. In addition, the mask metal film 110 produced through the electroforming process can also be subjected to a planarization process to control its surface characteristics and thickness. In addition, before bonding the mask metal film 110 to the template 50 , a planarization process can also be performed on the mask metal film 110 . The thickness of the mask metal film 110 may be approximately 5 μm to 20 μm.

另外,通過蝕刻掩模金屬膜110來形成掩模金屬膜時,應防止蝕刻液進入掩模金屬膜110與臨時黏合部55的介面以損傷臨時黏合部55/模板50,從而引起掩模圖案P的蝕刻誤差。因此,在掩模金屬膜110的一面上形成有第一絕緣部23的狀態下,將掩模金屬膜110黏合到模板50的上部面。即,可使形成有第一絕緣部23的掩模金屬膜110的面朝向模板50的上部面。掩模金屬膜110與模板50可通過中間夾設第一絕緣部23和臨時黏合部55相互黏合。In addition, when forming the mask metal film by etching the mask metal film 110, the etching liquid should be prevented from entering the interface between the mask metal film 110 and the temporary bonding portion 55 to damage the temporary bonding portion 55/template 50, thereby causing the mask pattern P etching error. Therefore, in a state where the first insulating portion 23 is formed on one side of the mask metal film 110 , the mask metal film 110 is bonded to the upper surface of the template 50 . That is, the surface of the mask metal film 110 on which the first insulating portion 23 is formed may face the upper surface of the template 50 . The mask metal film 110 and the template 50 can be bonded to each other by sandwiching the first insulating portion 23 and the temporary bonding portion 55 .

第一絕緣部23可使用不受蝕刻液蝕刻的光阻劑材料並通過印刷方法等形成於掩模金屬膜110上。此外,為了經多次濕蝕刻工藝後仍保持圓形,第一絕緣部23可包括固化性負型光阻劑、含有環氧樹脂的負型光阻劑中的至少任意一個。作為一示例,優選使用基於環氧樹脂的SU-8光阻劑、黑色矩陣光阻劑(black matrix),以實現在臨時黏合部55的烘焙、第二絕緣部25的烘焙(參照圖5的(c))等的過程中一起固化。The first insulating portion 23 can be formed on the mask metal film 110 by a printing method or the like using a photoresist material that is not etched by the etching liquid. In addition, in order to maintain a circular shape after multiple wet etching processes, the first insulating portion 23 may include at least any one of a curable negative photoresist and a negative photoresist containing epoxy resin. As an example, it is preferable to use epoxy resin-based SU-8 photoresist or black matrix photoresist (black matrix) to achieve baking in the temporary bonding part 55 and the second insulating part 25 (refer to FIG. 5 (c)) etc. are solidified together during the process.

由於所述第一絕緣部23的材料特性,即使形成第二絕緣部25[參照圖5的(c)]後執行多次後續蝕刻工藝也不會被蝕刻液溶化。如果第一絕緣部23不存在,則蝕刻液可進入受損的臨時黏合部55與掩模金屬膜110的介面之間,會進一步蝕刻第一掩模圖案P的下部,進而會引發圖案尺寸形成過大或者局部不定形缺陷的問題。隨著本發明進一步夾設第一絕緣部23,在利用多次工藝形成掩模圖案P的過程中,即使掩模金屬膜110被貫通,圖案寬度也不會進一步擴大,從而能夠維持絕緣部25的圖案寬度。Due to the material characteristics of the first insulating portion 23, even if multiple subsequent etching processes are performed after the second insulating portion 25 is formed (see FIG. 5(c)), it will not be dissolved by the etching liquid. If the first insulating portion 23 does not exist, the etching liquid can enter between the damaged temporary adhesive portion 55 and the interface of the mask metal film 110, which will further etch the lower part of the first mask pattern P, thereby causing pattern size formation. Problems with excessively large or locally irregular defects. As the present invention further interposes the first insulating portion 23 , in the process of forming the mask pattern P using multiple processes, even if the mask metal film 110 is penetrated, the pattern width will not further expand, so that the insulating portion 25 can be maintained. pattern width.

雖然第一絕緣部23和臨時黏合部55圖示為形成於模板50的上部面,但是也可以相反地形成於掩模金屬膜110的下部面。此外,模板50和掩模金屬膜110上還可分別形成有第一絕緣部23和臨時黏合部55。Although the first insulating portion 23 and the temporary bonding portion 55 are illustrated as being formed on the upper surface of the template 50 , they may be formed on the lower surface of the mask metal film 110 instead. In addition, a first insulating part 23 and a temporary bonding part 55 may be formed on the template 50 and the mask metal film 110 respectively.

然後,參照圖5的(c),可在掩模金屬膜110上形成經圖案化的絕緣部25(第二絕緣部25)。絕緣部25可利用印刷法等由光阻劑形成。Then, referring to (c) of FIG. 5 , the patterned insulating portion 25 (second insulating portion 25 ) may be formed on the mask metal film 110 . The insulating portion 25 can be formed of photoresist using a printing method or the like.

接下來,可對掩模金屬膜110進行蝕刻。可不受限制地使用乾式蝕刻、濕式蝕刻等方法,經蝕刻的結果,由絕緣部25之間的空白空間26露出的掩模金屬膜110部分可被蝕刻掉。掩模金屬膜110中被蝕刻的部分形成掩模圖案P,從而可製造形成有多個掩模圖案P的掩模100。Next, the mask metal film 110 may be etched. Methods such as dry etching and wet etching can be used without limitation. As a result of etching, the portion of the mask metal film 110 exposed by the blank space 26 between the insulating portions 25 can be etched away. The etched portion of the mask metal film 110 forms the mask pattern P, so that the mask 100 in which a plurality of mask patterns P is formed can be manufactured.

然後,參照圖5的(d),通過去除絕緣部25(第二絕緣部)可結束支撐掩模100的模板50的製造。Then, referring to (d) of FIG. 5 , the manufacturing of the template 50 supporting the mask 100 can be completed by removing the insulating portion 25 (second insulating portion).

另外,圖5的(d)中雖然說明了將掩模金屬膜110黏合到模板50之後形成掩模圖案P的過程,但不限於此,可以通過圖4的(a)和(b)將形成有掩模圖案P的掩模100(參照圖3)黏合到模板50上,以此結束用於支撐掩模100的模板50的製造。In addition, although (d) of FIG. 5 illustrates the process of forming the mask pattern P after bonding the mask metal film 110 to the template 50, the process is not limited to this and can be formed by (a) and (b) of FIG. 4 The mask 100 with the mask pattern P (refer to FIG. 3 ) is bonded to the template 50 , thereby completing the manufacturing of the template 50 for supporting the mask 100 .

由於框架200具有多個掩模單元區域CR(CR11-CR56),因此也可具有多個掩模100,所述掩模100具有對應每個掩模單元區域CR(CR11-CR56)的掩模單元C(C11-C56)。此外,可具有多個模板50,其用於分別支撐多個掩模100的每一個。Since the frame 200 has a plurality of mask unit areas CR (CR11-CR56), it may also have a plurality of masks 100 having mask units corresponding to each mask unit area CR (CR11-CR56). C(C11-C56). Furthermore, there may be a plurality of templates 50 for respectively supporting each of the plurality of masks 100 .

圖6是根據比較例的模板的熱膨脹係數高於掩模時存在的問題的示意圖。FIG. 6 is a schematic diagram illustrating problems that exist when the thermal expansion coefficient of the template is higher than that of the mask according to the comparative example.

參照圖6的(a),將執行掩模金屬膜110(或者掩模100)與模板50'黏合工藝的空間的工藝溫度上升到高於常溫的溫度T1。工藝溫度T1可以是使上述臨時黏合部55的黏性下降的85℃-100℃。接著,通過烘焙使臨時黏合部55的溶劑氣化,並將掩模金屬膜110黏合到模板50'上。然後,可將工藝溫度降到使臨時黏合部55的黏性變大且能夠使一部分固化成固體的溫度T2。Referring to (a) of FIG. 6 , the process temperature of the space where the bonding process of the mask metal film 110 (or the mask 100 ) and the template 50 ′ is performed is raised to a temperature T1 higher than normal temperature. The process temperature T1 may be 85°C to 100°C, which reduces the viscosity of the temporary bonding portion 55 . Next, the solvent in the temporary bonding portion 55 is vaporized by baking, and the mask metal film 110 is bonded to the template 50'. Then, the process temperature can be lowered to a temperature T2 that increases the viscosity of the temporary bonding portion 55 and allows a part of it to solidify.

過去,作為模板50'的材料使用玻璃(glass)、硼矽酸鹽玻璃(borosilicate glass)等。其中,尤其作為硼矽酸鹽玻璃的BOROFLOAT®33的熱膨脹係數約為3.3X10 -6/℃,其與熱膨脹係數約為1.5-3 X 10 -6/℃的因瓦合金(invar)掩模金屬膜110的熱膨脹係數差異較小,容易控制掩模金屬膜110,因此經常使用。 In the past, glass, borosilicate glass, etc. were used as the material of the template 50'. Among them, BOROFLOAT®33, which is a borosilicate glass, has a thermal expansion coefficient of about 3.3 The difference in thermal expansion coefficient of the film 110 is small, and the mask metal film 110 is easy to control, so it is often used.

模板50’的熱膨脹係數高於掩模金屬膜110,當如圖6的(a)所示使溫度T2下降時,掩模金屬膜110基於溫度變化而收縮的程度L2相對小,相反,模板50’相對收縮的程度L1(L1>L2)大。與此同時,模板50’和掩模金屬膜110為中間夾設臨時黏合部55而被牢固地黏合固定的狀態,掩模金屬膜110被施以比原來收縮的程度L2欲更加收縮的力CT。欲更加收縮的力CT由於模板50’收縮的程度L1大於掩模金屬膜110收縮的程度L2而產生。因此,掩模金屬膜110被施以側面方向(掩模金屬膜110的內側)的壓縮力CT的狀態黏合到模板50’上。The thermal expansion coefficient of the template 50' is higher than that of the mask metal film 110. When the temperature T2 is lowered as shown in FIG. 'The degree of relative shrinkage L1 (L1>L2) is large. At the same time, the template 50' and the mask metal film 110 are firmly adhered and fixed with the temporary adhesive portion 55 interposed therebetween, and the mask metal film 110 is exerted a shrinkage force CT that is greater than the original shrinkage degree L2. . The force CT to shrink more is generated because the template 50' shrinks to a greater extent L1 than the mask metal film 110 shrinks to a level L2. Therefore, the mask metal film 110 is adhered to the template 50' in a state where the compressive force CT in the side direction (inside of the mask metal film 110) is applied.

如果模板50’的熱膨脹係數高於掩模100(或者掩模金屬膜110),則會發生如下問題。If the thermal expansion coefficient of the template 50' is higher than that of the mask 100 (or the mask metal film 110), the following problems may occur.

參照圖6的(b),通過將圖6的(a)的模板50’裝載到框架200(或者邊緣片材部221、第一柵格片材部223及第二柵格片材部225)上從而對應掩模100,而且通過焊接形成焊珠WB,從而可以將掩模100附著到框架200上。Referring to (b) of FIG. 6 , the template 50 ′ of (a) of FIG. 6 is loaded onto the frame 200 (or the edge sheet part 221 , the first grid sheet part 223 and the second grid sheet part 225 ). Thereby corresponding to the mask 100, and welding beads WB are formed by welding, so that the mask 100 can be attached to the frame 200.

此外,可以從掩模100分離模板50’。然而,從掩模100分離模板50’的同時施加到掩模100上的壓縮力CT被解除,從而會導致掩模100的對準狀態被打亂。換而言之,會發生以下問題,即不能以掩模100兩側朝外側繃緊地拉拽的狀態下附著到框架200上,而以褶皺或下垂的狀態附著到框架200上的問題。這將造成基於掩模100的對準誤差、單元C之間的PPA誤差等的產品不良。Additionally, the template 50' can be detached from the mask 100. However, when the template 50' is separated from the mask 100, the compressive force CT applied to the mask 100 is released, thereby causing the alignment state of the mask 100 to be disrupted. In other words, there is a problem that the mask 100 cannot be attached to the frame 200 with both sides of the mask 100 being pulled tightly toward the outside, but is attached to the frame 200 in a wrinkled or sagging state. This will cause product defects based on alignment errors of the mask 100, PPA errors between cells C, etc.

因此,本發明的模板50具有熱膨脹係數低於掩模100(或者掩模金屬膜110)的特點。Therefore, the template 50 of the present invention has a thermal expansion coefficient lower than that of the mask 100 (or the mask metal film 110).

圖7是根據本發明一實施例的模板的熱膨脹係數低於掩模時的掩模與模板的介面狀態及掩模附著到框架上的狀態的示意圖。7 is a schematic diagram of the interface state between the mask and the template and the state of the mask attached to the frame when the thermal expansion coefficient of the template is lower than that of the mask according to an embodiment of the present invention.

參照圖7的(a),如圖6的(a)所示將執行工藝的空間的工藝溫度上升到高於常溫的溫度T1,並將掩模金屬膜110(或者已形成圖案P的掩模100)黏合到模板50上。接著,可將工藝溫度降到使臨時黏合部55的黏性變大且能夠使一部分固化成固體的溫度T2。Referring to FIG. 7(a) , as shown in FIG. 6(a) , the process temperature of the space where the process is performed is raised to a temperature T1 higher than the normal temperature, and the mask metal film 110 (or the mask on which the pattern P is formed is 100) Glued to template 50. Then, the process temperature can be lowered to a temperature T2 that increases the viscosity of the temporary bonding portion 55 and allows a part of it to solidify.

掩模金屬110(或者掩模100)為熱膨脹係數至少大於1的因瓦合金、超因瓦合金、鎳、鎳-鈷等材料。反之,模板50的熱膨脹係數可以小於1(大於0)。優選地,可使用熱膨脹係數為0.55的石英(quartz)材料的模板50,但不限於此。The mask metal 110 (or the mask 100) is made of Invar alloy, super Invar alloy, nickel, nickel-cobalt and other materials with a thermal expansion coefficient at least greater than 1. On the contrary, the thermal expansion coefficient of the template 50 may be less than 1 (greater than 0). Preferably, the template 50 may be made of quartz material with a thermal expansion coefficient of 0.55, but is not limited thereto.

由於模板50的熱膨脹係數低於掩模金屬膜110,當如圖7的(a)所示使溫度T2下降時,模板50幾乎不收縮或者收縮的程度相對小於掩模金屬膜110。掩模金屬膜110的收縮程度[收縮圖7(a)的L2程度]雖然會相對較大,但由於是通過夾設臨時黏合部55而牢固地黏合固定到模板50上的狀態,因此不能收縮且被施以欲收縮的內部力IT。換而言之,掩模金屬膜110被施以側面方向的拉伸力IT並以繃緊的狀態黏合到模板50。Since the thermal expansion coefficient of the template 50 is lower than that of the mask metal film 110 , when the temperature T2 is lowered as shown in FIG. 7( a ), the template 50 hardly shrinks or shrinks to a relatively smaller extent than the mask metal film 110 . Although the degree of shrinkage of the mask metal film 110 [the degree of shrinkage L2 in FIG. 7(a) ] is relatively large, it cannot shrink because it is firmly adhered and fixed to the template 50 with the temporary adhesive portion 55 interposed therebetween. And is exerted an internal force IT to shrink. In other words, the mask metal film 110 is exerted a tensile force IT in the side direction and is adhered to the template 50 in a tight state.

參照圖7的(b),以圖6的(a)狀態將模板50裝載到框架200(或者邊緣片材部221、第一柵格片材部223及第二柵格片材部225)上從而對應掩模100,而且通過焊接形成焊珠WB,從而可以將掩模100黏合到框架200。Referring to FIG. 7( b ), the template 50 is loaded onto the frame 200 (or the edge sheet part 221 , the first grid sheet part 223 and the second grid sheet part 225 ) in the state of FIG. 6( a ). Thereby corresponding to the mask 100, and welding beads WB are formed by welding, so that the mask 100 can be bonded to the frame 200.

此外,可以從掩模100分離模板50。然而,從掩模100分離模板50’的同時施加到掩模100上的拉伸力IT被解除並會轉換成使掩模100的兩側繃緊的張力TS。換而言之,該狀態是拉拽到比掩模100的原來下降溫度T2下的長度更長的長度後黏合到模板50上的狀態,由於在該狀態原封不動地焊接黏合到框架200上,因此能夠保持被拉拽的狀態(自身對周邊的掩模單元片材部220施加張力TS的狀態)。掩模100以被繃緊拉拽的狀態附著到框架200上,從而不會發生皺紋、變形等。因此,具有減少掩模100的對準誤差、單元C間的PPA誤差的效果。Additionally, the template 50 can be separated from the mask 100 . However, when the template 50' is separated from the mask 100, the tensile force IT applied to the mask 100 is released and converted into a tension TS that tightens both sides of the mask 100. In other words, this state is a state in which the mask 100 is pulled to a length longer than the original length at the lowered temperature T2 and then bonded to the template 50. Since the mask 100 is welded and bonded to the frame 200 as it is in this state, Therefore, the pulled state (the state in which it exerts tension TS on the surrounding mask unit sheet portion 220) can be maintained. The mask 100 is attached to the frame 200 in a taut and pulled state, so that wrinkles, deformation, etc. do not occur. Therefore, there is an effect of reducing the alignment error of the mask 100 and the PPA error between the cells C.

圖8是根據本發明的一實施例的掩模金屬膜110和模板50針對工藝溫度變化的延伸狀態的示意圖。FIG. 8 is a schematic diagram of the extended state of the mask metal film 110 and the template 50 in response to process temperature changes according to an embodiment of the present invention.

另外,如圖7,雖然可通過將模板50的熱膨脹係數設定為低於掩模金屬膜110的熱膨脹係數,對掩模金屬膜110(或者掩模100)施加內部力IT(或者拉伸力IT),然而為了在模板50上黏合掩模金屬膜110而上升的溫度為85-100℃,該範圍下,模板50與掩模金屬膜110的熱膨脹程度的差值並不大,而且在臨時黏合部55的黏合強度充分大的狀態下進行黏合,因此存在掩模金屬膜110內含的拉伸力IT不大的局限性。In addition, as shown in FIG. 7 , although the thermal expansion coefficient of the template 50 is set to be lower than that of the mask metal film 110 , an internal force IT (or a tensile force IT) can be applied to the mask metal film 110 (or the mask 100 ). ), however, the temperature raised in order to bond the mask metal film 110 to the template 50 is 85-100°C. Within this range, the difference in thermal expansion between the template 50 and the mask metal film 110 is not large, and during temporary bonding Since the adhesive strength of the portion 55 is sufficiently high, there is a limitation that the tensile force IT contained in the mask metal film 110 is not large.

因此,本發明的特徵在於,如圖8所示,相比圖7的實施例 ,進一步控制工藝溫度,使掩模金屬膜110拉伸或者拉伸力IT進一步增大。圖8的(a)中,為了比較掩模金屬膜110與模板50的伸縮程度,它們的初期長度相同,但是模板50的初期長度可大於或者等於掩模金屬膜110。Therefore, a feature of the present invention is that, as shown in FIG. 8 , compared with the embodiment of FIG. 7 , the process temperature is further controlled to further stretch the mask metal film 110 or further increase the tensile force IT. In FIG. 8(a) , in order to compare the expansion and contraction degrees of the mask metal film 110 and the template 50 , their initial lengths are the same, but the initial length of the template 50 may be greater than or equal to the mask metal film 110 .

參照圖8的(a),在約25℃的常溫(Room Temperature; RT)下準備模板50和掩模金屬膜110(或者形成有掩模圖案P的掩模100)。第一絕緣部23和臨時黏合部50可形成於模板50或者/和掩模金屬膜110的一面。Referring to (a) of FIG. 8 , the template 50 and the mask metal film 110 (or the mask 100 in which the mask pattern P is formed) are prepared at a room temperature (RT) of about 25° C. The first insulating part 23 and the temporary bonding part 50 may be formed on one side of the template 50 or/and the mask metal film 110 .

接著,參照圖8的(b),可將工藝溫度上升至使臨時黏合部55的黏合強度(push-pull strength)成為0至5kgf/cm 2的第一工藝溫度TS1。第一工藝溫度TS1可約為110-200℃。在第一工藝溫度TS1下臨時黏合部55為0至5kgf/cm 2時,臨時黏合部55無異於不具有能夠黏合掩模金屬膜110與模板50的黏合力的狀態。即,臨時黏合部55無黏性的狀態下很難黏合掩模金屬膜110與模板50,該狀態可理解為即使不施加荷重或者外力也會使掩模金屬膜110和模板50十分容易地脫離的狀態。因此,即使中間夾設臨時黏合部55(與第一絕緣部23),掩模金屬膜110與模板50之間只發生接觸而沒有黏合。掩模金屬膜110不受臨時黏合部55的妨礙而隨著溫度的上升呈線性(linear)延伸。此外,掩模金屬膜110的熱膨脹係數小於模板50的熱膨脹係數,因此在第一工藝溫度TS1下掩模金屬膜110的延伸程度L1可大於模板50的延伸程度L2。 Next, referring to (b) of FIG. 8 , the process temperature can be increased to a first process temperature TS1 at which the push-pull strength of the temporary bonding portion 55 becomes 0 to 5 kgf/cm 2 . The first process temperature TS1 may be approximately 110-200°C. When the temporary bonding portion 55 is 0 to 5 kgf/cm 2 at the first process temperature TS1 , the temporary bonding portion 55 is equivalent to a state in which the temporary bonding portion 55 has no adhesive force capable of bonding the mask metal film 110 and the template 50 . That is, it is difficult to adhere the mask metal film 110 and the template 50 when the temporary adhesive portion 55 has no adhesiveness. This state can be understood to mean that the mask metal film 110 and the template 50 can be separated very easily even if no load or external force is applied. status. Therefore, even if the temporary bonding portion 55 (and the first insulating portion 23 ) is interposed, the mask metal film 110 and the template 50 are only in contact without adhesion. The mask metal film 110 is not hindered by the temporary adhesive portion 55 and extends linearly as the temperature rises. In addition, the thermal expansion coefficient of the mask metal film 110 is smaller than that of the template 50 , so the extension degree L1 of the mask metal film 110 may be greater than the extension degree L2 of the template 50 at the first process temperature TS1 .

接著,參照圖8的(c),在掩模金屬膜110與模板50發生接觸的狀態下可將工藝溫度下降至第二工藝溫度TS2,在第二工藝溫度TS2下臨時黏合部55的黏合強度至少大於5kgf/cm 2。第二工藝溫度TS2可小於85-100℃且大於常溫。隨著在第二工藝溫度TS2下臨時黏合部55呈現出黏合力,掩模金屬膜110和模板50可發生黏合。隨著溫度下降模板50可發生收縮(L2->L3),掩模金屬膜110也會相應地收縮。 Next, referring to FIG. 8(c) , the process temperature can be lowered to the second process temperature TS2 while the mask metal film 110 is in contact with the template 50. At the second process temperature TS2, the adhesion strength of the temporary adhesive portion 55 is At least greater than 5kgf/cm 2 . The second process temperature TS2 may be less than 85-100°C and greater than normal temperature. As the temporary adhesive portion 55 exhibits adhesive force at the second process temperature TS2, the mask metal film 110 and the template 50 may be adhered. As the temperature decreases, the template 50 may shrink (L2->L3), and the mask metal film 110 will shrink accordingly.

只是,圖8的步驟(b)至步驟(c)中工藝溫度下降(TS1->TS2)時,臨時黏合部55首先冷卻並固化,而掩模金屬膜110相比於臨時黏合部55溫度下降速度可延後。因此,相比於圖7的情況,掩模金屬膜110能夠以進一步延伸的狀態黏合在模板50上。換而言之,相比於如圖7在常溫RT下立即上升至第二工藝溫度TS2之後黏合掩模金屬膜110與模板50的情況,如圖8在常溫T與第二工藝溫度TS2之間,通過進一步增加將溫度上升至第一工藝溫度TS1的步驟,掩模金屬膜110能夠以進一步延伸的狀態黏合到模板50上。常溫RT下立即上升至第二工藝溫度TS2之後黏合掩模金屬膜110與模板50時,由於臨時黏合部55中存在相當大的黏合力,因此掩模金屬膜110將受到臨時黏合部55的阻擋,進而即使溫度上升也會不發生線性(linear)延伸。掩模金屬膜110的進一步延伸對應於受模板50支撐的掩模金屬膜110(或者掩模100)中內含的拉伸力IT進一步增加,是指在以後的工藝中將掩模100對應/附著至框架200之後掩模100能夠保持更繃緊的狀態。However, when the process temperature drops (TS1->TS2) from step (b) to step (c) in FIG. 8 , the temporary bonding portion 55 is first cooled and solidified, and the mask metal film 110 is lower in temperature than the temporary bonding portion 55 The speed can be delayed. Therefore, compared with the situation in FIG. 7 , the mask metal film 110 can be bonded to the template 50 in a further extended state. In other words, compared to the situation where the mask metal film 110 and the template 50 are bonded immediately after rising to the second process temperature TS2 at room temperature RT as shown in FIG. 7 , between the room temperature T and the second process temperature TS2 as shown in FIG. 8 , by further adding the step of raising the temperature to the first process temperature TS1, the mask metal film 110 can be bonded to the template 50 in a further extended state. When the mask metal film 110 and the template 50 are bonded after immediately rising to the second process temperature TS2 from room temperature RT, the mask metal film 110 will be blocked by the temporary bonding portion 55 due to the considerable adhesive force present in the temporary bonding portion 55 , and even if the temperature rises, linear extension will not occur. Further extension of the mask metal film 110 corresponds to a further increase in the tensile force IT contained in the mask metal film 110 (or the mask 100) supported by the template 50, which means that the mask 100 will correspond to/ Mask 100 can remain in a more taut state after being attached to frame 200.

接著,參照圖8的(e),可將工藝溫度下降至常溫RT。隨著溫度下降,模板50發生收縮(L3左右),掩模金屬膜110也相應地收縮。模板50可恢復到圖8的(a)的初期常溫RT狀態下的長度,而掩模金屬膜110能夠以相比初期常溫RT進一步延伸L5的狀態黏合並固定到模板50上。該延伸L5的程度和掩模金屬膜110中內含的拉伸力IT大於圖7中所述的程度。Next, referring to (e) of FIG. 8 , the process temperature can be lowered to normal temperature RT. As the temperature decreases, the template 50 shrinks (around L3), and the mask metal film 110 shrinks accordingly. The template 50 can be restored to the length in the initial room temperature RT state in FIG. 8(a) , and the mask metal film 110 can be bonded and fixed to the template 50 in a state extending L5 further than the initial room temperature RT. The extent of the extension L5 and the tensile force IT contained in the mask metal film 110 are greater than those described in FIG. 7 .

另外,在圖8的步驟(c)和步驟(e)之間,可進一步執行將工藝溫度下降至低於常溫RT的工藝溫度TS3的工藝。然後,可再次將溫度上升至常溫RT。隨著將溫度下降至工藝溫度TS3,模板50相較於常溫狀態會更加收縮L4,掩模金屬膜110也會相應地收縮。工藝溫度TS3可約為5-15℃。此外,工藝溫度TS3的維持時間可至少大於或者等於圖8的(b)和(c)的工藝溫度TS1和TS2的維持時間。例如,假設TS1維持時間為10分鐘,TS2維持時間為5分鐘,則TS3的維持時間可以是10分鐘以上。通過上述的急速冷卻而非緩慢冷卻,臨時黏合部55的黏性增加,從而可使黏合強度進一步增加。隨著臨時黏合部55的黏合強度最大化,能夠進一步牢固地黏合掩模金屬膜110與模板50,圖8的步驟(b)中進一步延伸的掩模金屬膜110,其長度在溫度下降後仍能維持。In addition, between step (c) and step (e) of FIG. 8 , a process of lowering the process temperature to a process temperature TS3 lower than the normal temperature RT may be further performed. Then, the temperature can be raised again to room temperature RT. As the temperature decreases to the process temperature TS3, the template 50 will shrink L4 more than the normal temperature state, and the mask metal film 110 will shrink accordingly. The process temperature TS3 may be approximately 5-15°C. In addition, the maintenance time of the process temperature TS3 may be at least greater than or equal to the maintenance time of the process temperatures TS1 and TS2 of (b) and (c) of FIG. 8 . For example, assuming that the maintenance time of TS1 is 10 minutes and the maintenance time of TS2 is 5 minutes, the maintenance time of TS3 can be more than 10 minutes. Through the above-mentioned rapid cooling instead of slow cooling, the viscosity of the temporary bonding portion 55 increases, thereby further increasing the bonding strength. As the bonding strength of the temporary bonding portion 55 is maximized, the mask metal film 110 and the template 50 can be further firmly bonded. The length of the mask metal film 110 further extended in step (b) of FIG. 8 remains unchanged after the temperature drops. Can be maintained.

另外,可通過加熱/製冷手段控制用於佈置掩模100和模板50的工藝區域的工藝溫度。此外,還可通過向掩模100和模板50施加等離子體、UV、雷射等的特定能量來控制工藝溫度。In addition, the process temperature of the process area where the mask 100 and the template 50 are arranged can be controlled by heating/cooling means. In addition, the process temperature can also be controlled by applying specific energy of plasma, UV, laser, etc. to the mask 100 and the template 50 .

圖9是根據本發明一實驗例的掩模的初期設計尺寸與工藝結束後的尺寸的比較資料。圖9的(a)和(c)分別顯示2個樣品的初期狀態,(b)和(d)顯示執行圖8的工藝後的狀態。分別在掩模金屬膜110(或者掩模100)的上部、中部、下部設置3個點並比較大小。(a)-(d)中用虛線表示的部分對應以預定設計值佈置掩模圖案P的區域(掩模單元C),用實線表示的部分為實際測量值。FIG. 9 is a comparison data of the initial design size and the size after the process of the mask according to an experimental example of the present invention. (a) and (c) of Figure 9 respectively show the initial state of the two samples, and (b) and (d) show the state after the process of Figure 8 is performed. Three points were respectively set at the upper, middle, and lower parts of the mask metal film 110 (or the mask 100), and the sizes were compared. The parts indicated by dotted lines in (a)-(d) correspond to the area (mask unit C) where the mask pattern P is arranged with predetermined design values, and the parts indicated by solid lines are actual measured values.

比較(a)與(b)和(c)與(d)可知,在執行圖8的工藝後,虛線比實線的間距變大。這是指掩模金屬膜110相比於相同的點發生延伸。比較(a)與(b)可知,朝X軸(短邊)方向進一步延伸約1.6μm,朝Y軸(長邊)方向進一步延伸約4.3μm,比較(c)與(d)可知,朝X軸方向進一步延伸約0.9μm,朝Y軸方向進一步延伸約3.3μm。Comparing (a) and (b) and (c) and (d), it can be seen that after the process of Figure 8 is performed, the distance between the dotted lines becomes larger than that of the solid lines. This means that the mask metal film 110 extends compared to the same point. Comparing (a) and (b), it can be seen that it extends further toward the X-axis (short side) direction by about 1.6 μm, and further extends toward the Y-axis (long side) direction by about 4.3 μm. The axial direction further extends by about 0.9 μm, and the Y-axis direction further extends by about 3.3 μm.

圖10是根據本發明一實驗例的工藝前後測量掩模的總間距的方法的示意圖。FIG. 10 is a schematic diagram of a method for measuring the total pitch of a mask before and after a process according to an experimental example of the present invention.

以如下表1的條件進行了圖7和圖8的工藝。 表1 實驗例 條件 實驗例1 60℃(10分鐘)->RT(直接製冷) 實驗例2 80℃(10分鐘)->RT(直接製冷) 實驗例3 100℃(10分鐘)->RT(直接製冷) 實驗例4 120℃(10分鐘)->RT(直接製冷) 實驗例5 120℃(10分鐘)->50℃(5分鐘)->11℃(10分鐘)->RT 實驗例6 130℃(10分鐘)->50℃(5分鐘)->11℃(10分鐘)->RT 實驗例7 150℃(10分鐘)->11℃(10分鐘)->RT 實驗例8 150℃(10分鐘)->50℃(5分鐘)->11℃(10分鐘)->RT The processes of Figures 7 and 8 were carried out under the conditions of Table 1 below. Table 1 Experimental example condition Experimental example 1 60℃(10 minutes)->RT(direct cooling) Experimental example 2 80℃(10 minutes)->RT(direct refrigeration) Experimental example 3 100℃(10 minutes)->RT(direct refrigeration) Experimental example 4 120℃(10 minutes)->RT(direct refrigeration) Experimental example 5 120℃(10 minutes)->50℃(5 minutes)->11℃(10 minutes)->RT Experimental example 6 130℃(10 minutes)->50℃(5 minutes)->11℃(10 minutes)->RT Experimental example 7 150℃(10 minutes)->11℃(10 minutes)->RT Experimental example 8 150℃(10 minutes)->50℃(5 minutes)->11℃(10 minutes)->RT

實驗例1至3對應圖7的工藝,實驗例5、6及8對應圖8的工藝。實驗例4中只有初期上升溫度TS2對應圖8的工藝,實驗例7對應圖8的工藝中省略下降至TS2的步驟並直接冷卻至TS3的工藝。Experimental examples 1 to 3 correspond to the process of FIG. 7 , and experimental examples 5, 6, and 8 correspond to the process of FIG. 8 . In Experimental Example 4, only the initial rising temperature TS2 corresponds to the process of FIG. 8 , and Experimental Example 7 corresponds to the process of omitting the step of lowering to TS2 and directly cooling to TS3 in the process of FIG. 8 .

圖10示出了執行工藝後測量掩模100的延伸狀態的方法。掩模100中實際附著在框架200(掩模單元片材部220)上起到掩模單元C作用的部分為形成有掩模圖案P的部分,因此能夠以除虛設部DM以外的掩模圖案P的位置為基準測量延伸的狀態。掩模單元C中位於端部的掩模圖案P之間的距離被稱為總間距(total pitch; TP)。FIG. 10 shows a method of measuring the extended state of the mask 100 after performing the process. The portion of the mask 100 that is actually attached to the frame 200 (mask unit sheet portion 220) and functions as the mask unit C is the portion where the mask pattern P is formed. Therefore, a mask pattern other than the dummy portion DM can be used. The position of P is the state of reference measurement extension. The distance between the mask patterns P located at the ends of the mask unit C is called the total pitch (TP).

參照圖10,當掩模100具有一對長邊(X軸邊)和一對短邊(Y軸邊)時,如果將掩模100沿著短邊方向等分為三個區域,則在各區域中使任意直線S1、S2及S3朝垂直於短邊的方向延伸,並且可計算在任意直線S1、S2及S3中從佈置於一端的掩模圖案P至佈置於另一端的掩模圖案P的距離的平均值(X軸TP)。此外,如果沿長邊方向等分為三個區域,則在各區域中使任意直線S4、S5及S6朝垂直於長邊方向的方向延伸,而且可計算在任意直線S4、S5及S6中從佈置於一端的掩模圖案P至佈置於另一端的掩模圖案P的距離的平均值(Y軸TP)。Referring to FIG. 10 , when the mask 100 has a pair of long sides (X-axis sides) and a pair of short sides (Y-axis sides), if the mask 100 is equally divided into three areas along the short side direction, then in each area In the area, any straight lines S1, S2 and S3 are extended in the direction perpendicular to the short side, and the distance from the mask pattern P arranged at one end to the mask pattern P arranged at the other end in any straight line S1, S2 and S3 can be calculated. The average of the distances (X-axis TP). In addition, if it is equally divided into three areas along the long side direction, then any straight lines S4, S5 and S6 are extended in the direction perpendicular to the long side direction in each area, and the distance between any straight lines S4, S5 and S6 can be calculated. The average value of the distance from the mask pattern P arranged at one end to the mask pattern P arranged at the other end (Y-axis TP).

下表顯示實驗例1-8的X軸(長軸)TP和Y軸(短軸)TP。各軸的平均值可通過測量三個區域的TP來進行計算。△TP是在執行圖8的工藝後測定的TP值的基礎上減掉執行圖7的工藝後測定的TP值而獲得的。此外,△TP是在執行圖8的工藝後測定的TP值的基礎上減掉圖9中所述的預定設計值(參照圖9的虛線)而獲得的。實驗例1-7針對3個樣品進行了TP測定,實驗例8針對2個樣品2進行了TP測定。各實驗例中臨時黏合部55的黏合強度約為40kgf/cm 2(-4MPa)。表中數值單位為μm。 表2 實驗例 X軸△TP Y軸△TP X軸△TP平均/Y軸△TP平均 實驗例1 -0.9/-0.6/+0.2 -0.2/-0.1/+0.8 -0.4/+0.2 實驗例2 -0.6/-0.7/-0.2 +0.1/-0.3/+0.1 -0.5/-0.0 實驗例3 -0.1/-0.3/-0.6 0.0/0.0/+0.2 -0.6/+0.1 實驗例4 +0.6/+1.0/+0.6 0.0/+0.3/-0.2 +0.7/+0.0 實驗例5 +1.1/+0.9/-0.4 +0.6/+0.6/+0.3 +0.5/+0.5 實驗例6 +2.6/+5.5/+3.8 +1.7/+2.7/+2.0 +4.0/+2.1 實驗例7 +2.0/+2.3/+2.0 +1.7/+2.1/+1.2 +2.1/+1.7 實驗例8 +6.8/+5.2 +2.9/+2.3 +6.0/+2.6 The following table shows the X-axis (long axis) TP and Y-axis (short axis) TP of Experimental Example 1-8. The average value for each axis can be calculated by measuring the TP of three areas. ΔTP is obtained by subtracting the TP value measured after performing the process of FIG. 7 from the TP value measured after performing the process of FIG. 8 . In addition, ΔTP is obtained by subtracting the predetermined design value described in FIG. 9 (refer to the dotted line in FIG. 9 ) from the TP value measured after performing the process of FIG. 8 . Experimental Examples 1-7 performed TP measurements on three samples, and Experimental Example 8 performed TP measurements on two samples 2. The bonding strength of the temporary bonding portion 55 in each experimental example is approximately 40kgf/cm 2 (-4MPa). The unit of values in the table is μm. Table 2 Experimental example X-axis △TP Y axis △TP X-axis △TP average/Y-axis △TP average Experimental example 1 -0.9/-0.6/+0.2 -0.2/-0.1/+0.8 -0.4/+0.2 Experimental example 2 -0.6/-0.7/-0.2 +0.1/-0.3/+0.1 -0.5/-0.0 Experimental example 3 -0.1/-0.3/-0.6 0.0/0.0/+0.2 -0.6/+0.1 Experimental example 4 +0.6/+1.0/+0.6 0.0/+0.3/-0.2 +0.7/+0.0 Experimental example 5 +1.1/+0.9/-0.4 +0.6/+0.6/+0.3 +0.5/+0.5 Experimental example 6 +2.6/+5.5/+3.8 +1.7/+2.7/+2.0 +4.0/+2.1 Experimental example 7 +2.0/+2.3/+2.0 +1.7/+2.1/+1.2 +2.1/+1.7 Experimental example 8 +6.8/+5.2 +2.9/+2.3 +6.0/+2.6

參照表2可知,實驗例1至3中△TP的平均為負數而非正數。在對應圖8工藝的實驗例5、6及8中,△TP的平均為正數。尤其,可確認的是,隨著執行實驗例5、6及8,即,初期上升溫度TP2越是提高,△TP的絕對值越是變大。Referring to Table 2, it can be seen that the average value of ΔTP in Experimental Examples 1 to 3 is a negative number rather than a positive number. In Experimental Examples 5, 6 and 8 corresponding to the process in Figure 8, the average value of ΔTP is a positive number. In particular, it was confirmed that as Experimental Examples 5, 6, and 8 were executed, that is, as the initial rising temperature TP2 increased, the absolute value of ΔTP became larger.

尤其,△TP以長軸為基準優選約為0.1μm-20.0μm,以短軸為基準優選約為0.1μm-15.0μm。如果小於上述基準,則掩模100在框架200上很難維持充分緊繃的狀態,如果大於上述基準,則因掩模100施加在框架200上張力變大,使掩模圖案P發生對準誤差的可能性增大,反而會引起掩模100的局部發生褶皺。In particular, ΔTP is preferably about 0.1 μm to 20.0 μm based on the long axis, and preferably about 0.1 μm to 15.0 μm based on the short axis. If it is less than the above reference, it will be difficult for the mask 100 to maintain a sufficiently tight state on the frame 200. If it is greater than the above reference, the tension exerted by the mask 100 on the frame 200 will increase, causing an alignment error in the mask pattern P. The possibility increases, which may cause local wrinkles of the mask 100 .

圖11是根據本發明一實驗例的各工藝前後掩模總間距的測量結果的曲線圖。T1-T5作為初期上升溫度TP2,分別對應120℃-150℃。FIG. 11 is a graph showing the measurement results of the total mask spacing before and after each process according to an experimental example of the present invention. T1-T5 serve as the initial rising temperature TP2, corresponding to 120℃-150℃ respectively.

參照圖11可知,圖8的工藝中初期上升溫度TP2越是提高,△TP越是變大。該傾向與圖10的實驗例5、6及8相同。即,可以確認的是,初期上升溫度TP2越是提高,掩模金屬膜110以延伸程度越是變大的狀態黏合並固定到模板50上。Referring to FIG. 11 , it can be seen that in the process of FIG. 8 , ΔTP becomes larger as the initial rising temperature TP2 increases. This tendency is the same as Experimental Examples 5, 6 and 8 in Fig. 10 . That is, it was confirmed that as the initial rising temperature TP2 increases, the mask metal film 110 adheres and is fixed to the template 50 in a state in which the degree of extension increases.

圖12是根據本發明一實驗例的將掩模100附著到框架200之後將砝碼MS放到掩模100上來測量張力的過程的示意圖。FIG. 12 is a schematic diagram of a process of measuring tension by placing the weight MS on the mask 100 after attaching the mask 100 to the frame 200 according to an experimental example of the present invention.

掩模100以附著在框架200(掩模單元片材部220:223、225)的狀態下,將50g的砝碼MS放到掩模100的中心部並測量掩模單元片材部(220:223,225)相對掩模100的下垂量。下表中,實驗例9和10為未執行圖8工藝的狀態,實驗例11和12為執行了圖8工藝的狀態。在初期狀態下,掩模單元片材部220的高度為0,其為基準值,△(OM)顯示將砝碼MS放到掩模100上時掩模單元片材部220的下垂量(μm)。 表3   實驗例9 實驗例10 實驗例11 實驗例12 開始 35 48 26 36 砝碼(50g) -716 -702 -671 -683 △(OM) -222 -232 -230 -235 △(開始-砝碼加重後) -751 -750 -697 -719 結束 35 48 26 39 △(OM)(開始-結束) 0 0 0 3 With the mask 100 attached to the frame 200 (mask unit sheet parts 220: 223, 225), a weight MS of 50 g is placed on the center of the mask 100 and the mask unit sheet part (220: 223, 225) The amount of sagging relative to the mask 100. In the table below, Experimental Examples 9 and 10 are states where the process of Figure 8 is not executed, and Experimental Examples 11 and 12 are states where the process of Figure 8 is executed. In the initial state, the height of the mask unit sheet portion 220 is 0, which is a reference value. Δ(OM) indicates the amount of sagging of the mask unit sheet portion 220 (μm) when the weight MS is placed on the mask 100 ). table 3 Experimental example 9 Experimental example 10 Experimental example 11 Experimental example 12 Start 35 48 26 36 Weight(50g) -716 -702 -671 -683 △(OM) -222 -232 -230 -235 △(Start-after the weight is increased) -751 -750 -697 -719 end 35 48 26 39 △(OM)(start-end) 0 0 0 3

參照表3可知,由於從開始階段起實驗例11和12的掩模100便具有較大的拉伸力且緊繃地附著在掩模單元片材部220上,因此高度較低。可以確認的是,掩模單元片材部220的變形量△(OM)幾乎保持恒定。此外,對於將砝碼MS放到掩模100上的情況,實驗例9和10中平均值為-750,相反地,實驗例11和12的平均值為-708,下垂量減少42μm。這意味著,掩模100以較大的拉伸力IT或者張力TS(參照圖15)附著在框架200上。Referring to Table 3, it can be seen that the masks 100 of Experimental Examples 11 and 12 have a large tensile force and are tightly attached to the mask unit sheet portion 220 from the initial stage, so the height is low. It was confirmed that the deformation amount Δ(OM) of the mask unit sheet portion 220 remained almost constant. In addition, when the weight MS is placed on the mask 100, the average value is -750 in Experimental Examples 9 and 10. On the contrary, the average value is -708 in Experimental Examples 11 and 12, and the amount of sagging is reduced by 42 μm. This means that the mask 100 is attached to the frame 200 with a large tensile force IT or tension TS (see FIG. 15 ).

圖13是根據本發明一實施例的將模板50裝載到框架200上並將掩模100對應到框架200的單元區域CR的狀態的示意圖。圖13中列舉了將一個掩模100對應/附著在單元區域CR上的方式,但也可以執行將多個掩模100同時對應到所有的單元區域CR並將掩模100附著到框架200上的過程。此時可具有多個模板50,其用於分別支撐多個掩模100的每一個。FIG. 13 is a schematic diagram of a state in which the template 50 is loaded onto the frame 200 and the mask 100 is mapped to the unit area CR of the frame 200 according to an embodiment of the present invention. FIG. 13 illustrates a method of mapping/attaching one mask 100 to the unit area CR, but it is also possible to map multiple masks 100 to all unit areas CR at the same time and attach the masks 100 to the frame 200 . Process. At this time, there may be a plurality of templates 50 for supporting each of the plurality of masks 100 respectively.

模板50可通過真空吸盤90移送。可以用真空吸盤90吸附黏合有掩模100的模板50的面的相反面並進行移送。真空吸盤90吸附模板50並進行翻轉之後向框架200移送模板50的過程中仍不會影響掩模100的黏合狀態和對準狀態。The template 50 can be transferred by a vacuum suction cup 90 . The surface opposite to the surface of the template 50 to which the mask 100 is adhered can be sucked and transferred using the vacuum suction cup 90 . The vacuum suction cup 90 absorbs and flips the template 50 and then transfers the template 50 to the frame 200 without affecting the bonding state and alignment of the mask 100 .

接著參照圖13,可以將掩模100對應到框架200的一個掩模單元區域CR上。通過將模板50裝載到框架200(或者掩模單元片材部220)可使掩模100對應至掩模單元區域CR。控制模板50/真空吸盤90的位置的同時可通過顯微鏡觀察掩模100是否對應於掩模單元區域CR。由於模板50擠壓掩模100,因此掩模100可與框架200緊貼。Next, referring to FIG. 13 , the mask 100 can be mapped to a mask unit region CR of the frame 200 . The mask 100 can be made to correspond to the mask unit region CR by loading the template 50 to the frame 200 (or the mask unit sheet portion 220). While controlling the position of the template 50/vacuum suction cup 90, it can be observed through a microscope whether the mask 100 corresponds to the mask unit area CR. Since the template 50 presses the mask 100, the mask 100 can be in close contact with the frame 200.

另外,框架200下部可以進一步佈置下部支撐體70。下部支撐體70可擠壓與掩模100接觸的掩模單元區域CR的反面。與此同時,由於下部支撐體70和模板50向相互相反的方向擠壓掩模100的邊緣和框架200(或者掩模單元片材部220),因此能夠保持掩模100的對準狀態且不被打亂。In addition, a lower support body 70 may be further arranged at the lower part of the frame 200 . The lower support 70 may press the opposite surface of the mask unit region CR in contact with the mask 100 . At the same time, since the lower support 70 and the template 50 press the edge of the mask 100 and the frame 200 (or the mask unit sheet portion 220 ) in opposite directions, the alignment state of the mask 100 can be maintained and no Be disrupted.

接下來,向掩模100照射雷射L並基於雷射焊接將掩模100附著到框架200上。通過雷射焊接的掩模的焊接部WP部分上生成焊珠WB,焊珠WB可具有與掩模100/框架200相同的材料且與它們一體連接。Next, the mask 100 is irradiated with laser L and attached to the frame 200 based on laser welding. Welding beads WB are generated on the welding portion WP of the mask by laser welding. The welding beads WB may have the same material as the mask 100/frame 200 and be integrally connected with them.

圖14是根據本發明一實施例的將掩模附著到框架上之後使掩模與模板分離的過程的示意圖。14 is a schematic diagram of a process of separating the mask from the template after attaching the mask to the frame according to an embodiment of the present invention.

參照圖14,將掩模100附著到框架200之後,可將掩模100與模板50分離(debonding)。掩模100與模板50的分離可通過對臨時黏合部55進行加熱ET、化學處理CM、施加超聲波US、施加紫外線UV中至少任意一個來執行。由於掩模100保持附著在框架200的狀態,因此可以只抬起模板50。作為一示例,如果施加高於85℃-100℃的溫度的熱ET,則臨時黏合部55的黏性降低,掩模100與模板50的黏合力減弱,從而可分離掩模100與模板50。作為另一示例,可通過利用將臨時黏合部55沉浸CM在IPA、丙酮、乙醇等化學物質中以使臨時黏合部55溶解、去除等的方式來使掩模100與模板50分離。作為另一示例,通過施加超聲波US或者施加紫外線UV使掩模100與模板50的黏合力減弱,從而可以使掩模100與模板50分離。Referring to FIG. 14 , after the mask 100 is attached to the frame 200 , the mask 100 may be debonded from the template 50 . The separation of the mask 100 and the template 50 can be performed by at least any one of heating ET, chemical treatment CM, application of ultrasonic waves US, and application of ultraviolet UV to the temporarily bonded portion 55 . Since the mask 100 remains attached to the frame 200, only the template 50 can be lifted. As an example, if thermal ET at a temperature higher than 85° C. to 100° C. is applied, the viscosity of the temporary adhesive portion 55 is reduced, and the adhesive force between the mask 100 and the template 50 is weakened, so that the mask 100 and the template 50 can be separated. As another example, the mask 100 and the template 50 can be separated from the template 50 by immersing the temporary adhesive portion 55 in CM in chemical substances such as IPA, acetone, ethanol, etc. to dissolve, remove, or the like. As another example, the adhesive force between the mask 100 and the template 50 is weakened by applying ultrasonic waves US or ultraviolet UV, so that the mask 100 and the template 50 can be separated.

如果模板50從掩模100分離,則施加到掩模100上的拉伸力IT被解除的同時可轉換成使掩模100的兩側繃緊的張力TS。由此,可通過向框架200(掩模單元片材部220)施加張力TS使掩模100以繃緊的狀態附著。If the template 50 is separated from the mask 100 , the tensile force IT applied to the mask 100 is released and converted into a tension TS that tightens both sides of the mask 100 . Thereby, the mask 100 can be attached in a tight state by applying the tension TS to the frame 200 (mask unit sheet portion 220).

圖15是根據本發明一實施例的將掩模100附著到框架200的狀態的示意圖。圖15中圖示了將所有掩模100附著到框架200的單元區域CR的狀態。雖然可一一附著掩模100後再分離模板50,但也可將所有掩模100附著後再分離所有模板50。FIG. 15 is a schematic diagram of a state in which the mask 100 is attached to the frame 200 according to an embodiment of the present invention. A state in which all masks 100 are attached to the unit area CR of the frame 200 is illustrated in FIG. 15 . Although the masks 100 can be attached one by one and then the template 50 is detached, it is also possible to attach all the masks 100 and then detach all the templates 50 .

現有的圖1的掩模10包括6個單元C1-C6,因此具有較長的長度,而本發明的掩模100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度會變小。而且,本發明由於只需要對應掩模100的一個單元C並確認對準狀態即可,因此與同時對應多個單元C(C1-C6)並需要確認全部對準狀態的現有方法相比,本發明可以明顯縮短製造時間。The existing mask 10 of FIG. 1 includes 6 units C1-C6 and therefore has a longer length, while the mask 100 of the present invention includes one unit C and therefore has a shorter length, so the PPA (pixel position accuracy) is distorted. will become smaller. Moreover, the present invention only needs to correspond to one unit C of the mask 100 and confirm the alignment status. Therefore, compared with the existing method that simultaneously corresponds to multiple units C (C1-C6) and needs to confirm all the alignment statuses, the present invention is more efficient. Inventions can significantly reduce manufacturing time.

如果每個掩模100均附著在對應的掩模單元區域CR上之後再分離模板50與掩模100,則由於多個掩模100會施加向相反的方向收縮的張力TS,所述張力相互抵消,因此掩模單元片材部220上不會發生變形。例如,在CR11單元區域上附著的掩模100與CR12單元區域上附著的掩模100之間的第一柵格片材部223上,附著在CR11單元區域上的掩模100向右側方向作用的張力TS與附著在CR12單元區域上的掩模100向左側方向作用的張力TS可相互抵消。因此,框架200(或者掩模單元片材部220)因張力TS發生的變形被最小化,從而具有使掩模100(或者掩模圖案P)的對準誤差最小化的優點。If each mask 100 is attached to the corresponding mask unit region CR and then the template 50 and the mask 100 are separated, the plurality of masks 100 will exert tension TS that shrinks in opposite directions, and the tensions will cancel each other out. , therefore the mask unit sheet portion 220 will not be deformed. For example, on the first grid sheet portion 223 between the mask 100 attached to the CR11 unit area and the mask 100 attached to the CR12 unit area, the mask 100 attached to the CR11 unit area acts in the right direction. The tension TS and the tension TS acting in the left direction of the mask 100 attached to the CR12 unit area can cancel each other out. Therefore, the deformation of the frame 200 (or the mask unit sheet portion 220 ) due to the tension TS is minimized, thereby minimizing the alignment error of the mask 100 (or the mask pattern P).

如上所述,本發明列舉了優選實施例進行圖示和說明,但是本發明不限於上述實施例,在不脫離本發明的精神的範圍內,本領域技術人員能夠進行各種變形和變更。這種變形和變更均屬於本發明和所附的申請專利範圍的範圍。As mentioned above, the present invention has been illustrated and described by enumerating preferred embodiments. However, the present invention is not limited to the above-described embodiments. Those skilled in the art can make various modifications and changes within the scope that does not depart from the spirit of the present invention. Such deformations and changes all fall within the scope of the present invention and the appended patent applications.

23:第一絕緣部 25:第二絕緣部 50:模板(template) 51:雷射通過孔 55:臨時黏合部 100:掩模 110:掩模膜、掩模金屬膜 200:框架 210:邊緣框架部 220:掩模單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 C:單元、掩模單元 CR:掩模單元區域 DM:虛設部、掩模虛設部 L:雷射 P:掩模圖案 RT:常溫 S1-S6:直線 TS1,TS2,TS3:第一、二、三工藝溫度 WB:焊珠 23:First insulation department 25:Second Insulation Department 50: template 51: Laser pass hole 55: Temporary bonding part 100:mask 110: Mask film, mask metal film 200:Frame 210: Edge frame part 220:Mask unit sheet section 221: Edge sheet part 223: The first grid sheet department 225: Second grid sheet part C: unit, mask unit CR: mask unit area DM: Dummy Department, Mask Dummy Department L:Laser P:Mask pattern RT: normal temperature S1-S6: straight line TS1, TS2, TS3: first, second and third process temperatures WB:weld beads

圖1是現有的將掩模附著到框架的過程的示意圖。 圖2是根據本發明一實施例的框架一體型掩模的主視圖及側截面圖。 圖3是根據本發明一實施例的掩模的示意圖。 圖4至圖5是根據本發明一實施例的通過在模板上黏合掩模金屬膜來形成掩模以製造掩模支撐模板的過程的示意圖。 圖6是根據比較例的模板的熱膨脹係數高於掩模時存在的問題的示意圖。 圖7是根據本發明一實施例的模板的熱膨脹係數低於掩模時的掩模與模板的介面狀態及掩模附著到框架上的狀態的示意圖。 圖8是根據本發明的一實施例的掩模金屬膜和模板針對工藝溫度變化的延伸狀態的示意圖。 圖9是根據本發明一實驗例的掩模的初期設計尺寸與工藝結束後的尺寸的比較資料。 圖10是根據本發明一實驗例的工藝前後測量掩模的總間距的方法的示意圖。 圖11是根據本發明一實驗例的各工藝溫度前後掩模總間距的測量結果的曲線圖。 圖12是根據本發明的一實驗例的將掩模附著到框架上之後將砝碼放到掩模上來測量張力的過程的示意圖。 圖13是根據本發明的一實施例的將模板裝載到框架上並將掩模對應到框架的單元區域的狀態的示意圖。 圖14是根據本發明的一實施例的將掩模附著到框架上之後使掩模和模板分離的過程的示意圖。 圖15是根據本發明一實施例的將掩模附著到框架的單元區域的狀態的示意圖。 Figure 1 is a schematic diagram of the existing process of attaching a mask to a frame. 2 is a front view and a side cross-sectional view of a frame-integrated mask according to an embodiment of the present invention. Figure 3 is a schematic diagram of a mask according to an embodiment of the present invention. 4 to 5 are schematic diagrams of a process of forming a mask by bonding a mask metal film on the template to manufacture a mask supporting template according to an embodiment of the present invention. FIG. 6 is a schematic diagram illustrating problems that exist when the thermal expansion coefficient of the template is higher than that of the mask according to the comparative example. 7 is a schematic diagram of the interface state between the mask and the template and the state of the mask attached to the frame when the thermal expansion coefficient of the template is lower than that of the mask according to an embodiment of the present invention. FIG. 8 is a schematic diagram of the extended state of the mask metal film and the template in response to process temperature changes according to an embodiment of the present invention. FIG. 9 is a comparison data of the initial design size and the size after the process of the mask according to an experimental example of the present invention. FIG. 10 is a schematic diagram of a method for measuring the total pitch of a mask before and after a process according to an experimental example of the present invention. FIG. 11 is a graph showing the measurement results of the total mask spacing before and after each process temperature according to an experimental example of the present invention. 12 is a schematic diagram of a process of measuring tension by placing a weight on the mask after attaching the mask to the frame according to an experimental example of the present invention. FIG. 13 is a schematic diagram of a state in which a template is loaded onto a frame and the mask is mapped to a unit area of the frame according to an embodiment of the present invention. 14 is a schematic diagram of a process of separating the mask and the template after attaching the mask to the frame according to an embodiment of the present invention. FIG. 15 is a schematic diagram of a state in which a mask is attached to a unit area of a frame according to an embodiment of the present invention.

100:掩模 100:mask

P:掩模圖案 P:Mask pattern

S1-S6:直線 S1-S6: straight line

Claims (8)

一種OLED像素形成用掩模,其受模板支撐並附著在框架上,該模板上支撐有掩模,其中,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,根據下面的(I)或者(II)製造掩模,(I):(a)準備一面形成有臨時黏合部的模板;(b)將工藝溫度上升至使臨時黏合部的黏合強度(push-pull strength)至少成為0至5kgf/cm2的溫度並將掩模金屬膜接觸到模板上;(c)將工藝溫度下降至使臨時黏合部的黏合強度至少大於5kgf/cm2的溫度並將掩模金屬膜黏合到模板上;(d)將工藝溫度下降至常溫;(e)通過在掩模金屬膜上形成掩模圖案來製造掩模;(II):(a)準備形成有掩模圖案的掩模;(b)準備一面形成有臨時黏合部的模板;(c)將工藝溫度上升至使臨時黏合部的黏合強度至少成為0至5kgf/cm2的溫度並將掩模接觸到模板上;(d)將工藝溫度下降至使臨時黏合部的黏合強度至少大於5kgf/cm2的溫度並將掩模黏合到模板上;(e)將工藝溫度下降至常溫;採用預定設計值的掩模是通過以下步驟製造的掩模:(1)準備一面形成有臨時黏合部的模板;(2)將工藝溫度上升至使臨時黏合部至少黏合掩模金屬膜和模板的85℃至100℃並將掩模金屬膜黏合到模板上;(3)將工藝溫度下降至常溫;(4)通過在掩模金屬膜上形成掩模圖案來製造掩模;在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於採用預定設計值的掩模中從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm,掩模的熱膨脹係數至少大於1X10-6/℃,模板的熱膨脹係數小於1X10-6/℃(超過0),其中,在步驟(b)中將工藝溫度上升至110℃至200℃,在步驟(c)中將工藝溫 度下降至低於步驟(b)的工藝溫度且高於常溫。 A mask for OLED pixel formation, which is supported by a template and attached to a frame. The template supports a mask, wherein the mask includes a mask unit formed with a plurality of mask patterns and dummy holes around the mask unit. The mask has a pair of long sides and a pair of short sides. Make the mask according to (I) or (II) below. (I): (a) Prepare a template with a temporary bonding part formed on one side; (b) Apply the process The temperature rises to a temperature where the push-pull strength of the temporary bonding part becomes at least 0 to 5 kgf/cm 2 and the mask metal film contacts the template; (c) The process temperature is lowered to a temperature where the push-pull strength of the temporary bonding part becomes at least 0 to 5 kgf/cm 2 The bonding strength is at least greater than 5kgf/cm 2 at a temperature and the mask metal film is bonded to the template; (d) the process temperature is lowered to normal temperature; (e) the mask is manufactured by forming a mask pattern on the mask metal film; (II): (a) Prepare a mask with a mask pattern formed on it; (b) Prepare a template with a temporary adhesive portion formed on one side; (c) Increase the process temperature until the adhesive strength of the temporary adhesive portion becomes at least 0 to 5kgf / cm2 and contact the mask to the template; (d) Lower the process temperature to a temperature such that the bonding strength of the temporary bonding part is at least greater than 5kgf/ cm2 and bond the mask to the template; (e) The process temperature is lowered to normal temperature; the mask using the predetermined design value is a mask manufactured through the following steps: (1) prepare a template with a temporary adhesive portion formed on one side; (2) increase the process temperature to a point where the temporary adhesive portion at least adheres to the mask The temperature of the mold metal film and the template is 85°C to 100°C and the mask metal film is bonded to the template; (3) the process temperature is lowered to normal temperature; (4) the mask is manufactured by forming a mask pattern on the mask metal film ; On any straight line parallel to the long side or short side of the mask, the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end is compared with the distance from the mask pattern arranged at the predetermined design value to The distance from the mask pattern at one end to the mask pattern arranged at the other end is 0.1 μm to 20.0 μm larger. The thermal expansion coefficient of the mask is at least greater than 1X10 -6 /℃, and the thermal expansion coefficient of the template is less than 1X10 -6 /℃ (more than 0) , wherein the process temperature is raised to 110°C to 200°C in step (b), and the process temperature is lowered to lower than the process temperature of step (b) and higher than normal temperature in step (c). 如請求項1所述的OLED像素形成用掩模,其中,將掩模沿長邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於長邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為A,將掩模沿短邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於短邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為B,對於採用預定設計值的掩模的情況,將掩模沿長邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於長邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為C,將掩模沿短邊方向等分為三個區域時,在各個區域中使任意直線朝垂直於短邊的方向延伸,將任意直線上從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離平均值設定為D,此時A-C的值和B-D的值分別為正數。 The OLED pixel forming mask according to claim 1, wherein when the mask is divided into three equal regions along the long side, any straight line is extended in each region in a direction perpendicular to the long side, and the arbitrary straight line is extended in a direction perpendicular to the long side. The average distance from the mask pattern arranged at one end to the mask pattern arranged at the other end is set to A. When the mask is equally divided into three areas along the short side direction, any straight line is directed vertically in each area. Extending in the direction of the short side, the average distance on any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end is set to B. For the case of using a mask with a predetermined design value, the mask When dividing the area into three equal areas along the long side, extend any straight line in each area in a direction perpendicular to the long side, and extend any straight line from the mask pattern arranged at one end to the mask pattern arranged at the other end. The average distance is set to C. When the mask is equally divided into three areas along the short side, any straight line is extended in the direction perpendicular to the short side in each area, and any straight line is drawn from the mask pattern arranged at one end. The average distance to the mask pattern arranged at the other end is set to D, and at this time, the values of A-C and B-D are positive numbers respectively. 如請求項2所述的OLED像素形成用掩模,其中,A-C的值為0.1μm至20.0μm,B-D的值為0.1μm至15.0μm。 The OLED pixel formation mask according to claim 2, wherein the values of A-C are 0.1 μm to 20.0 μm, and the values of B-D are 0.1 μm to 15.0 μm. 如請求項1所述的OLED像素形成用掩模,其中,步驟(d)包括以下步驟:(d1)將工藝溫度下降至低於常溫;(d2)將工藝溫度上升至常溫。 The mask for forming OLED pixels according to claim 1, wherein step (d) includes the following steps: (d1) lowering the process temperature to lower than normal temperature; (d2) raising the process temperature to normal temperature. 如請求項1所述的OLED像素形成用掩模,其中,步驟(b)中掩模金屬膜以與模板之間無黏合力的狀態下,相較於模板向側面進一步延伸,步驟(c)中掩模金屬膜以延伸的狀態黏合到模板上。 The mask for forming OLED pixels as described in claim 1, wherein in step (b), the mask metal film extends further to the side than the template in a state where there is no adhesive force between it and the template, and step (c) The mid-mask metal film is bonded to the template in an extended state. 如請求項5所述的OLED像素形成用掩模,其中,步驟(b)中工 藝溫度越是提高,掩模金屬膜以延伸程度越是變大的狀態黏合並固定到模板上。 The mask for OLED pixel formation as described in claim 5, wherein in step (b) As the process temperature increases, the mask metal film is bonded and fixed to the template in a state of greater extension. 一種支撐有掩模的模板,該模板用於支撐OLED像素形成用掩模並將該掩模對應到框架上,包括:模板;臨時黏合部,其形成在模板上;以及掩模,其通過夾設臨時黏合部黏合到模板上且形成有多個掩模圖案,掩模包括一個形成有多個掩模圖案的掩模單元和掩模單元周圍的虛設部,掩模具有一對長邊和一對短邊,根據下面的(I)或者(II)製造掩模,(I):(a)準備一面形成有臨時黏合部的模板;(b)將工藝溫度上升至使臨時黏合部的黏合強度(push-pull strength)至少成為0至5kgf/cm2的溫度並將掩模金屬膜接觸到模板上;(c)將工藝溫度下降至使臨時黏合部的黏合強度至少大於5kgf/cm2的溫度並將掩模金屬膜黏合到模板上;(d)將工藝溫度下降至常溫;(e)通過在掩模金屬膜上形成掩模圖案來製造掩模;(II):(a)準備形成有掩模圖案的掩模;(b)準備一面形成有臨時黏合部的模板;(c)將工藝溫度上升至使臨時黏合部的黏合強度至少成為0至5kgf/cm2的溫度並將掩模接觸到模板上;(d)將工藝溫度下降至使臨時黏合部的黏合強度至少大於5kgf/cm2的溫度並將掩模黏合到模板上;(e)將工藝溫度下降至常溫;採用預定設計值的掩模是通過以下步驟製造的掩模:(1)準備一面形成有臨時黏合部的模板;(2)將工藝溫度上升至使臨時黏合部至少黏合掩模金屬膜和模板的85℃至100℃並將掩模金屬膜黏合到模板上;(3)將工藝溫度下降至常溫;(4)通過在掩模金屬膜上形成掩模圖案來製造掩模;在平行於掩模的長邊或者短邊的任意直線上,從佈置於一端的掩模圖案至佈置於另一端的掩模圖案的距離相較於採用預定設計值的掩模中從佈置於一端 的掩模圖案至佈置於另一端的掩模圖案的距離大0.1μm至20.0μm,掩模的熱膨脹係數至少大於1X10-6/℃,模板的熱膨脹係數小於1X10-6/℃(超過0),其中,在步驟(b)中將工藝溫度上升至110℃至200℃,在步驟(c)中將工藝溫度下降至低於步驟(b)的工藝溫度且高於常溫。 A template that supports a mask, the template is used to support a mask for forming OLED pixels and correspond the mask to a frame, including: a template; a temporary adhesive portion formed on the template; and a mask that passes through a clamp Assume that the temporary adhesive portion is bonded to the template and is formed with multiple mask patterns. The mask includes a mask unit formed with multiple mask patterns and a dummy portion around the mask unit. The mask has a pair of long sides and a pair of On the short side, make a mask according to (I) or (II) below, (I): (a) prepare a template with a temporary bonding portion formed on one side; (b) increase the process temperature to a level that increases the bonding strength of the temporary bonding portion ( push-pull strength) to a temperature of at least 0 to 5kgf/ cm2 and contact the mask metal film to the template; (c) lower the process temperature to a temperature where the bonding strength of the temporary bonding part is at least greater than 5kgf/ cm2 and Bond the mask metal film to the template; (d) Lower the process temperature to normal temperature; (e) Make the mask by forming a mask pattern on the mask metal film; (II): (a) Prepare to form a mask (b) prepare a template with a temporary bonding portion formed on one side; (c) raise the process temperature to a temperature such that the bonding strength of the temporary bonding portion becomes at least 0 to 5kgf/ cm2 and contact the mask on the template; (d) lower the process temperature to a temperature where the bonding strength of the temporary bonding part is at least greater than 5kgf/ cm2 and bond the mask to the template; (e) lower the process temperature to normal temperature; use the predetermined design value The mask is a mask manufactured by the following steps: (1) preparing a template with a temporary adhesive portion formed on one side; (2) raising the process temperature to 85°C to 100°C where the temporary adhesive portion can at least adhere to the mask metal film and the template And bond the mask metal film to the template; (3) Reduce the process temperature to normal temperature; (4) Make the mask by forming a mask pattern on the mask metal film; Place a mask parallel to the long or short side of the mask On any straight line along the edge, the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end is compared with the distance from the mask pattern arranged at one end to the mask pattern arranged at the other end in the mask using the predetermined design value. The distance between the mask patterns is 0.1 μm to 20.0 μm, the thermal expansion coefficient of the mask is at least greater than 1X10 -6 /℃, and the thermal expansion coefficient of the template is less than 1X10 -6 /℃ (more than 0), where the process is The temperature rises to 110°C to 200°C, and in step (c), the process temperature is lowered to lower than the process temperature of step (b) and higher than normal temperature. 一種框架一體型掩模的製造方法,該框架一體型掩模由至少一個掩模及用於支撐掩模的框架一體形成,其中,該方法包括以下步驟:(a)將請求項7所述的支撐有掩模的模板裝載到具有至少一個掩模單元區域的框架上,並將掩模對應到框架的掩模單元區域;以及(b)將掩模附著到框架上。 A method for manufacturing a frame-integrated mask, the frame-integrated mask is integrally formed by at least one mask and a frame for supporting the mask, wherein the method includes the following steps: (a) combining the method described in claim 7 Loading the template supporting the mask onto a frame having at least one mask unit area and corresponding the mask to the mask unit area of the frame; and (b) attaching the mask to the frame.
TW110127725A 2020-09-04 2021-07-28 Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame TWI812985B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2020-0112930 2020-09-04
KR1020200112930A KR102501250B1 (en) 2020-09-04 2020-09-04 Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame

Publications (2)

Publication Number Publication Date
TW202226640A TW202226640A (en) 2022-07-01
TWI812985B true TWI812985B (en) 2023-08-21

Family

ID=80394122

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110127725A TWI812985B (en) 2020-09-04 2021-07-28 Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame

Country Status (3)

Country Link
KR (1) KR102501250B1 (en)
CN (1) CN114134459B (en)
TW (1) TWI812985B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838063B (en) * 2023-01-04 2024-04-01 達運精密工業股份有限公司 Correction method of metal mask

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102013434B1 (en) * 2018-10-12 2019-08-22 주식회사 티지오테크 Producing method of template for supporting mask and producing method of mask integrated frame
TW202021174A (en) * 2018-11-27 2020-06-01 南韓商Tgo科技股份有限公司 Producing method of mask integrated frame and mask changing method of mask integrated frame

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101986528B1 (en) * 2018-10-11 2019-06-07 주식회사 티지오테크 Template for supporting mask and producing methoe thereof and producing method of mask integrated frame
CN111224019B (en) * 2018-11-23 2023-05-02 Tgo科技株式会社 Mask support template, method for manufacturing the same, and method for manufacturing mask and frame connector
KR102241771B1 (en) * 2018-11-30 2021-04-19 주식회사 오럼머티리얼 Template for supporting mask, template for supporting mask metal sheet and producing methoe thereof and producing method of mask integrated frame

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102013434B1 (en) * 2018-10-12 2019-08-22 주식회사 티지오테크 Producing method of template for supporting mask and producing method of mask integrated frame
TW202021174A (en) * 2018-11-27 2020-06-01 南韓商Tgo科技股份有限公司 Producing method of mask integrated frame and mask changing method of mask integrated frame

Also Published As

Publication number Publication date
CN114134459A (en) 2022-03-04
CN114134459B (en) 2024-11-26
KR20220031242A (en) 2022-03-11
KR102501250B1 (en) 2023-02-21
TW202226640A (en) 2022-07-01

Similar Documents

Publication Publication Date Title
CN111261802B (en) Mask supporting template, mask metal film supporting template, mask supporting template manufacturing method, and frame integrated mask manufacturing method
TWI758661B (en) Template for supporting mask and producing method thereof and producing method of mask integrated frame
KR101986528B1 (en) Template for supporting mask and producing methoe thereof and producing method of mask integrated frame
CN112639156B (en) Method for manufacturing frame-integrated mask and frame
TWI730512B (en) Producing method of mask integrated frame and mask changing method of mask integrated frame
TWI810381B (en) Template for supporting mask and producing method thereof and producing method of mask integrated frame
KR101988498B1 (en) Template for supporting mask and producing methoe thereof and producing method of mask integrated frame
CN111224019A (en) Mask supporting template, method for manufacturing the same, and method for manufacturing frame-integrated mask
KR102013434B1 (en) Producing method of template for supporting mask and producing method of mask integrated frame
TWI812985B (en) Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame
TW202108790A (en) Template for supporting mask, producing method of template for supporting mask and producing method of mask integrated frame
TWI771976B (en) Template for supporting mask and producing method thereof and producing method of mask and producing method of mask integrated frame
KR20220071891A (en) Mask for forming oled picture element and mask integrated frame
CN116426870B (en) Method for controlling tensile force of mask and method for manufacturing frame-integrated mask
KR102404746B1 (en) Producing method of template for supporting mask and tension applying method to mask and producing method of mask integrated frame
TWI832113B (en) Mask for forming oled picture element and mask integrated frame
TWI810497B (en) Producing method of template for supporting mask and producing method of mask integrated frame
KR102854300B1 (en) Control method of mask tension and producing method of mask intergrated frame
TWI830051B (en) Producing method of template for supporting mask and template for supporting mask and producing method of mask integrated frame
TWI770929B (en) Mask metal sheet and template for supporting mask metal sheet and template for supporting mask and producing method thereof
CN117051356A (en) Method for reducing stretching force applied to mask
KR20230165428A (en) Producing method of mask and producing method of template supporting mask
KR20220060377A (en) Mask for forming oled picture element