TWI730512B - Producing method of mask integrated frame and mask changing method of mask integrated frame - Google Patents
Producing method of mask integrated frame and mask changing method of mask integrated frame Download PDFInfo
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- H—ELECTRICITY
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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Abstract
本發明涉及一種框架一體型掩模的製造方法及框架一體型掩模的掩模分離/替換方法。本發明涉及的框架一體型掩模的製造方法,該框架一體型掩模由多個掩模和用於支撐掩模的框架一體形成,該方法的特徵在於包括:(a)準備模板上黏合有掩模的掩模支撐模板的步驟,所述掩模上形成有多個掩模圖案P;(b)將包括具有多個掩模單元區域CR的框架的工藝區域的溫度上升至第一溫度ET的步驟;(c)將模板裝載在框架上並將掩模對應至框架的掩模單元區域CR的步驟;(d)將掩模附著在框架上的步驟;(e)反復步驟(c)至步驟(d)將掩模附著至框架的所有掩模單元區域CR的步驟;(f)將包括框架的工藝區域的溫度下降至第二溫度LT的步驟。The invention relates to a method for manufacturing a frame-integrated mask and a mask separation/replacement method for a frame-integrated mask. The present invention relates to a method for manufacturing a frame-integrated mask. The frame-integrated mask is integrally formed by a plurality of masks and a frame for supporting the mask. The method is characterized in that it includes: (a) The preparation template is bonded with A step of masking a mask supporting a template on which a plurality of mask patterns P are formed; (b) raising the temperature of a process area including a frame having a plurality of mask unit regions CR to a first temperature ET (C) the step of loading the template on the frame and corresponding the mask to the mask unit area CR of the frame; (d) the step of attaching the mask to the frame; (e) repeating steps (c) to Step (d) a step of attaching a mask to all mask cell regions CR of the frame; (f) a step of lowering the temperature of the process area including the frame to a second temperature LT.
Description
發明領域 本發明涉及一種框架一體型掩模的製造方法及框架一體型掩模的掩模分離/替換方法。更具體地,涉及一種使掩模不發生變形且可穩定地得到支撐並移動,可準確地在各掩模間進行對準(align),在從框架上分離替換掩模的過程中能夠防止框架的變形的框架一體型掩模的製造方法及框架一體型掩模的掩模分離/替換方法。Field of invention The invention relates to a method for manufacturing a frame-integrated mask and a mask separation/replacement method for a frame-integrated mask. More specifically, it relates to a mask that does not deform, can be stably supported and moved, can accurately align between the masks, and can prevent the frame from being separated from the frame to replace the mask. A modified frame-integrated mask manufacturing method and a frame-integrated mask mask separation/replacement method.
發明背景 作為OLED(有機發光二極體)製造工藝中形成像素的技術,主要使用FMM(Fine Metal Mask,精細金屬掩模)方法,該方法將薄膜形式的金屬掩模(Shadow Mask,陰影掩模)緊貼於基板並且在所需位置上沉積有機物。Background of the invention As a technology for forming pixels in the OLED (organic light emitting diode) manufacturing process, the FMM (Fine Metal Mask) method is mainly used, which tightens the thin film form of the metal mask (Shadow Mask). Stick to the substrate and deposit organics on the desired location.
在現有的OLED製造工藝中,將掩模製造成條狀、板狀等後,將掩模焊接固定到OLED像素沉積框架並使用。一個掩模上可以具備與一個顯示器對應的多個單元。另外,為了製造大面積OLED,可將多個掩模固定於OLED像素沉積框架,在固定於框架的過程中,拉伸各個掩模,以使其變得平坦。調節拉伸力以使掩模的整體部分變得平坦是非常困難的作業。特別是,為了使各個單元全部變得平坦,同時對準尺寸僅為數μm至數十μm的掩模圖案,需要微調施加到掩模各側的拉伸力並且即時確認對準狀態的高度作業要求。In the existing OLED manufacturing process, after the mask is manufactured into a strip shape, a plate shape, etc., the mask is welded and fixed to the OLED pixel deposition frame and used. One mask may have a plurality of cells corresponding to one display. In addition, in order to manufacture a large-area OLED, multiple masks can be fixed to the OLED pixel deposition frame, and during the process of fixing to the frame, each mask is stretched to make it flat. It is very difficult to adjust the stretching force to flatten the entire part of the mask. In particular, in order to make each unit flat while aligning a mask pattern with a size of only a few μm to several tens of μm, it is necessary to fine-tune the tensile force applied to each side of the mask and confirm the alignment status immediately. .
儘管如此,在將多個掩模固定於一個框架過程中,仍然存在掩模之間以及掩模單元之間對準不好的問題。另外,在將掩模焊接固定於框架的過程中,掩模膜的厚度過薄且面積大,因此存在掩模因荷重而下垂或者扭曲的問題;由於焊接過程中在焊接部分產生的皺紋、毛刺(burr)等,導致掩模單元的對準不准的問題等。Nevertheless, in the process of fixing multiple masks to one frame, there is still a problem of poor alignment between the masks and between the mask units. In addition, in the process of welding and fixing the mask to the frame, the thickness of the mask film is too thin and the area is large, so there is a problem of the mask sagging or twisting due to the load; due to wrinkles and burrs generated in the welding part during the welding process (Burr) and so on, causing the problem of inaccurate alignment of the mask unit.
在超高清的OLED中,現有的QHD畫質為500-600PPI(pixel per inch,每英吋像素),像素的尺寸達到約30-50μm,而4K UHD、8K UHD高清具有比之更高的~860PPI,~1600PPI等的解析度。如此,考慮到超高清的OLED的像素尺寸,需要將各單元之間的對準誤差縮減為數μm左右,超出這一誤差將導致產品的不良,所以收率可能極低。因此,需要開發能夠防止掩模的下垂或者扭曲等變形並且使對準精確的技術,以及將掩模固定於框架的技術等。In ultra-high-definition OLEDs, the existing QHD image quality is 500-600PPI (pixel per inch, pixels per inch), and the pixel size reaches about 30-50μm, while 4K UHD and 8K UHD have higher definitions~ Resolution of 860PPI, ~1600PPI, etc. In this way, considering the pixel size of the ultra-high-definition OLED, the alignment error between the units needs to be reduced to a few μm. Exceeding this error will lead to product failure, so the yield may be extremely low. Therefore, it is necessary to develop a technology that can prevent deformation such as sagging or twisting of the mask and make the alignment accurate, and a technology that fixes the mask to the frame, and the like.
另外,部分掩模沒有準確對準地固定或者掩模中發生缺陷時,需要將掩模分離,但是在分離及替換焊接的掩模的過程中,存在打亂其他掩模的對準的問題。In addition, when part of the mask is not accurately aligned and fixed or when a defect occurs in the mask, the mask needs to be separated. However, in the process of separating and replacing the soldered mask, there is a problem of disrupting the alignment of other masks.
發明概要 [技術問題] 因此,本發明為了解決如上所述的現有技術的各種問題而提出的,其目的在於,提供一種可使掩模不發生變形且穩定地得到支撐並移動,而且可防止掩模發生下垂或者扭曲等變形,並可準確地對準的框架一體型掩模的製造方法。Summary of the invention [technical problem] Therefore, the present invention was proposed in order to solve the various problems of the prior art as described above, and its object is to provide a mask that can be supported and moved stably without deformation, and can prevent the mask from sagging or twisting. A manufacturing method for a frame-integrated mask that is deformable and can be accurately aligned.
此外,本發明的目的在於提供一種可顯著地減少製造時間,並顯著地提升收率的框架一體型掩模的製造方法。In addition, an object of the present invention is to provide a method for manufacturing a frame-integrated mask that can significantly reduce the manufacturing time and significantly improve the yield.
此外,本發明的目的在於,提供一種在掩模和框架形成一體型結構的框架一體型掩模中可防止框架的扭曲等變形,且能夠分離及替換掩模以使掩膜準確地對準的框架一體型掩模的掩模分離/替換方法。 [解決手段]In addition, an object of the present invention is to provide a frame-integrated mask in which the mask and the frame form an integrated structure, which can prevent distortion of the frame and other deformations, and can separate and replace the mask to accurately align the mask. Mask separation/replacement method for frame-integrated masks. [Solution]
本發明的所述目的可通過以下框架一體型掩模的製造方法實現,該框架一體型掩模由多個掩模和用於支撐掩模的框架一體形成,該方法包括:(a)準備模板上黏合有掩模的掩模支撐模板的步驟,所述掩模上形成有多個掩模圖案;(b)將包括具有多個掩模單元區域的框架的工藝區域的溫度上升至第一溫度的步驟;(c)將模板裝載在框架上並將掩模對應至框架的掩模單元區域的步驟;(d)將掩模附著在框架上的步驟;(e)反復步驟(c)至步驟(d)將掩模附著至框架的所有掩模單元區域的步驟;以及(f)將包括框架的工藝區域的溫度下降至第二溫度的步驟。The object of the present invention can be achieved by the following method for manufacturing a frame-integrated mask, which is integrally formed by a plurality of masks and a frame for supporting the mask, and the method includes: (a) preparing a template A step of attaching a mask to a mask supporting template, the mask having a plurality of mask patterns formed thereon; (b) raising the temperature of a process area including a frame having a plurality of mask unit areas to a first temperature (C) the step of loading the template on the frame and corresponding the mask to the mask unit area of the frame; (d) the step of attaching the mask to the frame; (e) repeating steps (c) to steps (D) A step of attaching a mask to all mask unit areas of the frame; and (f) a step of lowering the temperature of the process area including the frame to a second temperature.
步驟(a)可包括:(a1)將掩模金屬膜黏合到一面形成有臨時黏合部的模板上的步驟;以及(a2)通過在掩模金屬膜上形成掩模圖案來製造掩模,從而提供模板上黏合有掩模的掩模支撐模板的步驟,所述掩模上形成有多個掩模圖案的。Step (a) may include: (a1) bonding a mask metal film to a template with a temporary bonding portion formed on one side; and (a2) manufacturing a mask by forming a mask pattern on the mask metal film, thereby A step of providing a mask support template with a mask adhered on the template, and a plurality of mask patterns formed on the mask.
在步驟(a1)與步驟(a2)之間,還可包括縮減黏合在模板上的掩模金屬膜厚度的步驟。Between step (a1) and step (a2), a step of reducing the thickness of the mask metal film bonded on the template may also be included.
臨時黏合部可以為基於加熱可分離的黏合劑或者黏合片材,基於照射UV可分離的黏合劑或者黏合片材。The temporary bonding part may be an adhesive or an adhesive sheet that is separable by heating, or an adhesive or an adhesive sheet that is separable by irradiation with UV.
步驟(a2)可包括:(a2-1)在掩模金屬膜上形成經圖案化的絕緣部的步驟;(a2-2)通過蝕刻絕緣部之間露出的掩模金屬膜部分來形成掩模圖案的步驟;以及(a2-3)去除絕緣部的步驟。Step (a2) may include: (a2-1) a step of forming a patterned insulating portion on the mask metal film; (a2-2) forming a mask by etching the portion of the mask metal film exposed between the insulating portions The step of patterning; and (a2-3) the step of removing the insulating part.
在步驟(d)中,在模板上部照射的雷射可通過雷射貫穿孔照射到掩模的焊接部。In step (d), the laser irradiated on the upper part of the template can be irradiated to the welding part of the mask through the laser through hole.
第一溫度可大於或者等於OLED像素沉積工藝溫度,第二溫度可至少低於第一溫度,第一溫度可為25℃至60℃中任意一溫度,第二溫度可低於第一溫度且為20℃至30℃中任意一溫度,OLED像素沉積工藝溫度可為25℃至45℃中任意一溫度。The first temperature may be greater than or equal to the OLED pixel deposition process temperature, the second temperature may be at least lower than the first temperature, the first temperature may be any temperature from 25°C to 60°C, and the second temperature may be lower than the first temperature and At any temperature from 20°C to 30°C, the OLED pixel deposition process temperature can be any temperature from 25°C to 45°C.
在步驟(c)中,不對掩模施加拉伸,而可以只通過控制模板的位置將模板上的掩模對應至掩模單元區域。In step (c), no stretching is applied to the mask, and the mask on the template can be mapped to the mask unit area only by controlling the position of the template.
在步驟(f)中,如果將工藝區域的溫度下降至第二溫度,則因附著在框架上的掩模收縮而會承受張力(tension)。In the step (f), if the temperature of the process area is lowered to the second temperature, the mask attached to the frame will be subjected to tension (tension) due to the shrinkage of the mask attached to the frame.
在步驟(d)與步驟(e)之間,還可包括通過對臨時黏合部進行加熱、化學處理、施加超聲波、施加紫外線中至少任意一個,將掩模與模板進行分離的步驟。Between step (d) and step (e), it may further include a step of separating the mask from the template by heating the temporary bonding part, chemical treatment, applying ultrasonic waves, and applying ultraviolet rays.
此外,本發明的所述目的可通過框架一體型掩模的掩模分離/替換方法實現,該框架一體型掩模由多個掩模和用於支撐掩模的框架一體形成,該方法包括:(a)將包括框架的工藝區域的溫度上升至第一溫度的步驟;(b)將目標掩模從框架分離的步驟;(c)準備模板,並在框架上裝載模板,從而將掩模對應至將目標掩模分離後的掩模單元區域上的步驟,所述掩模上形成有多個掩模圖案;(d)將掩模附著在框架上的步驟;(e)將包括框架的工藝區域的溫度下降至第二溫度的步驟。In addition, the object of the present invention can be achieved by a mask separation/replacement method for a frame-integrated mask, which is integrally formed by a plurality of masks and a frame for supporting the mask, and the method includes: (A) The step of raising the temperature of the process area including the frame to the first temperature; (b) The step of separating the target mask from the frame; (c) The template is prepared, and the template is loaded on the frame to match the mask To the step of separating the target mask on the mask unit area, a plurality of mask patterns are formed on the mask; (d) the step of attaching the mask to the frame; (e) the process of including the frame The step of decreasing the temperature of the zone to the second temperature.
第一溫度可大於或者等於OLED像素沉積工藝溫度,第二溫度可至少低於第一溫度,第一溫度可為25℃至60℃中任意一溫度,第二溫度可低於第一溫度且為20℃至30℃中任意一溫度,OLED像素沉積工藝溫度可為25℃至45℃中任意一溫度。The first temperature may be greater than or equal to the OLED pixel deposition process temperature, the second temperature may be at least lower than the first temperature, the first temperature may be any temperature from 25°C to 60°C, and the second temperature may be lower than the first temperature and At any temperature from 20°C to 30°C, the OLED pixel deposition process temperature can be any temperature from 25°C to 45°C.
在步驟(c)中,不對掩模施加拉伸,而可以只通過控制模板的位置將模板上的掩模對應至掩模單元區域。In step (c), no stretching is applied to the mask, and the mask on the template can be mapped to the mask unit area only by controlling the position of the template.
在步驟(a)中,如果將工藝區域的溫度上升至第一溫度,則附著在框架上的掩模上施加的張力(tension)可被解除。In step (a), if the temperature of the process area is raised to the first temperature, the tension applied to the mask attached to the frame can be released.
在步驟(e)中,如果將工藝區域的溫度下降至第二溫度,則因附著在框架上的掩模發生收縮而會承受張力(tension)。In the step (e), if the temperature of the process area is lowered to the second temperature, the mask attached to the frame will be subjected to tension due to shrinkage.
在步驟(b)中,擠壓作為分離/替換對象的目標掩模的至少一側棱角的外側框架部分,並可通過向掩模的一側棱角施加外力將掩模從框架上分離。 [發明效果]In step (b), the outer frame portion of at least one corner of the target mask to be separated/replaced is squeezed, and the mask can be separated from the frame by applying an external force to one corner of the mask. [Effects of the invention]
根據具有如上所述結構的本發明,使掩模不發生變形且穩定地得到支撐並移動,而且可防止掩模發生下垂或者扭曲等變形,並可準確地對準。According to the present invention having the structure as described above, the mask can be stably supported and moved without deformation, and the mask can be prevented from being deformed such as sagging or twisting, and can be accurately aligned.
此外,根據本發明,具有可顯著地減少製造時間,並顯著地提升收率的效果。In addition, according to the present invention, the manufacturing time can be significantly reduced, and the yield can be significantly improved.
此外,根據本發明,掩模和框架形成一體型結構的框架一體型掩模可防止框架的扭曲等變形,而且能夠進行分離及替換掩模使掩模準確地對準。In addition, according to the present invention, the frame-integrated mask in which the mask and the frame form an integrated structure can prevent distortion of the frame, etc., and can separate and replace the mask to accurately align the mask.
具體實施方式 後述的對於本發明的詳細說明將參照附圖,該附圖將能夠實施本發明的特定實施例作為示例示出。充分詳細地說明這些實施例,以使本領域技術人員能夠實施本發明。應當理解,本發明的多種實施例雖然彼此不同,但是不必相互排斥。例如,在此記載的特定形狀、結構及特性與一實施例有關,在不脫離本發明的精神及範圍的情況下,能夠實現為其他實施例。另外,應當理解,各個公開的實施例中的個別構成要素的位置或配置,在不脫離本發明的精神及範圍的情況下,能夠進行變更。因此,後述的詳細說明不應被視為具有限制意義,只要適當地說明,則本發明的範圍僅由所附的申請專利範圍及與其等同的所有範圍限定。圖中相似的附圖標記從多方面表示相同或相似的功能,為了方便起見,長度、面積、厚度及其形狀可以誇大表示。Detailed ways The detailed description of the present invention described later will refer to the accompanying drawings, which illustrate specific embodiments capable of implementing the present invention as examples. These embodiments are explained in sufficient detail to enable those skilled in the art to implement the present invention. It should be understood that although the various embodiments of the present invention are different from each other, they are not necessarily mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented in other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of the individual constituent elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description should not be regarded as having a restrictive meaning, and as long as it is appropriately described, the scope of the present invention is limited only by the scope of the attached patent application and all equivalent scopes thereof. Similar reference numerals in the figures represent the same or similar functions from many aspects. For convenience, the length, area, thickness and shape thereof may be exaggerated.
以下,將參照附圖對本發明的優選實施例進行詳細說明,以便本領域技術人員能夠容易地實施本發明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily implement the present invention.
圖1是示出現有的OLED像素沉積用掩模10的示意圖。FIG. 1 is a schematic diagram showing a
參照圖1,現有的掩模10可以以條式(Stick-Type)或者板式(Plate-Type)製造。圖1的(a)中示出的掩模10作為條式掩模,可以將條的兩側焊接固定於OLED像素沉積框架並使用。圖1的(b)中示出的掩模100作為板式掩模,可以使用於大面積的像素形成工藝。1, the existing
在掩模10的主體(Body,或者掩模膜11)中,具備多個顯示單元C。一個單元C與智慧手機等的一個顯示器(display)對應。單元C中形成有像素圖案P,以便與顯示器的各個像素對應。放大單元C時,顯示與R、G、B對應的多個像素圖案P。作為一例,在單元C中形成有像素圖案P,以便具有70×140解析度。即,大量的像素圖案P形成集合,以構成一個單元C,並且多個單元C可以形成於掩模10。The main body (body, or mask film 11) of the
圖2是示出現有的將掩模10附著至框架20的過程的示意圖。圖3是示出在現有的拉伸F1~F2掩模10的過程中發生單元之間的對準誤差的示意圖。下面,以圖1的(a)示出的具備6個單元C(C1~C6)的條式掩模10為例進行說明。FIG. 2 is a schematic diagram showing a process of attaching the
參照圖2的(a),首先,應將條式掩模10平坦地展開。沿著條式掩模10的長軸方向施加拉伸力F1~F2,隨著拉伸,展開條式掩模10。在該狀態下,將條式掩模10裝載在方框形狀的框架20上。條式掩模10的單元C1~C6將位於框架20的框內部空白區域部分。框架20的尺寸可以足以使一個條式掩模10的單元C1~C6位於框內部空白區域,也可以足以使多個條式掩模10的單元C1~C6位於框內部空白區域。Referring to FIG. 2(a), first, the
參照圖2的(b),微調施加到條式掩模10各側的拉伸力F1~F2,同時對準後,隨著焊接W條式掩模10側面的一部分,將條式掩模10和框架20彼此連接。圖2的(c)示出彼此連接的條式掩模10和框架的側截面。2(b), fine-tune the tensile forces F1~F2 applied to each side of the
參照圖3,儘管微調施加到條式掩模10各側的拉伸力F1~F2,但是顯示出掩模單元C1~C3彼此之間對準不好的問題。例如,單元C1~C3的圖案P之間的距離D1~D1''、D2~D2''彼此不同,或者圖案P歪斜。由於條式掩模10具有包括多個(作為一例,為6個)單元C1~C6的大面積,並且具有數十μm的非常薄的厚度,所以容易因荷重而下垂或者扭曲。另外,調節拉伸力F1~F2,以使各個單元C1~C6全部變得平坦,同時通過顯微鏡即時確認各個單元C1~C6之間的對準狀態是非常困難的作業。Referring to FIG. 3, although the tensile forces F1 to F2 applied to each side of the
因此,拉伸力F1~F2的微小誤差可能引起條式掩模10各單元C1~C3的拉伸或者展開程度的誤差,由此,導致掩模圖案P之間的距離D1~D1''、D2~D2''不同。雖然完美地對準以使誤差為0是非常困難的,但是為了避免尺寸為數μm至數十μm的掩模圖案P對超高清OLED的像素工藝造成壞影響,優選對準誤差不大於3μm。將如此相鄰的單元之間的對準誤差稱為像素定位精度(pixel position accuracy,PPA)。Therefore, slight errors in the stretching forces F1 to F2 may cause errors in the degree of stretching or unfolding of each unit C1 to C3 of the
另外,將大概6-20個條式掩模10分別連接在一個框架20,同時使多個條式掩模10之間,以及條式掩模10的多個單元C-C6之間的對準狀態精確是非常困難的作業,並且只能增加基於對準的工藝時間,這成為降低生產性的重要理由。In addition, about 6-20
另一方面,將條式掩模10連接固定到框架20後,施加到條式掩模10的拉伸力F1~F2會反向地作用於框架20。即,由於拉伸力F1~F2而繃緊拉伸的條式掩模10連接在框架20後,能夠將張力(tension)作用於框架20。通常,該張力不大,不會對框架20產生大的影響,但是在框架20的尺寸實現小型化且強度變低的情況下,這種張力可能使框架20細微變形。如此,可能發生破壞多個單元C~C6間的對準狀態的問題。On the other hand, after the
鑒於此,本發明提出能夠使掩模100與框架200形成一體式結構的框架200以及框架一體型掩模。與框架200形成一體的掩模100能夠防止下垂或者扭曲等變形,並且精確地對準於框架200。當掩模100連接到框架200上時,不對掩模100施加任何拉伸力,因此掩模100連接到框架200後,不會對掩模200施加引起變形的張力。並且,能夠顯著地縮短將掩模100一體地連接到框架200的製造時間,並且顯著提升收率。In view of this, the present invention proposes a
圖4是示出本發明的一實施例涉及的框架一體型掩模的主視圖(圖4的(a))以及側剖視圖(圖4的(b)),圖5是示出本發明的一實施例涉及的框架的主視圖(圖5的(a))以及側剖視圖(圖5的b)。4 is a front view (FIG. 4(a)) and a side cross-sectional view (FIG. 4(b)) of a frame-integrated mask according to an embodiment of the present invention, and FIG. 5 is a view showing an aspect of the present invention A front view (FIG. 5( a)) and a side cross-sectional view (FIG. 5 b) of the frame related to the embodiment.
參照圖4以及圖5,框架一體型掩模可以包括多個掩模100以及一個框架200。換句話說,將多個掩模100分別附著至框架200的形態。以下,為了便於說明,以四角形狀的掩模100為例進行說明,但是掩模100在附著至框架200之前,可以是兩側具備用於夾持的突出部的條式掩模形狀,附著至框架200後,可以去除突出部。4 and 5, the frame-integrated mask may include a plurality of
各個掩模100上形成有多個掩模圖案P,一個掩模100上可以形成有一個單元C。一個掩模單元C可以與智慧手機等的一個顯示器對應。A plurality of mask patterns P are formed on each
掩模100可為熱膨脹係數約為1.0X10-6/℃的因瓦合金(invar),膨脹係數約為1.0X10-7/℃的超因瓦合金(super invar)材料。該材料的掩模100由於熱膨脹係數十分低因此很少存在因熱能導致掩模的圖案變形的憂慮,進而在高解析度OLED製造中可作為FMM(Fine Metal Mask)、陰影掩模(Shadow Mask)使用。除此之外,考慮到最近開發的在溫度變化值不大的範圍內執行像素沉積工藝的技術,掩模100也可以是熱膨脹係數略大於此的鎳(Ni)、鎳-鈷(Ni-Co)等材料。掩模100可使用由壓延(rolling)工藝或者電鑄(electroforming)生成的金屬片材(sheet)。以下通過圖9和圖10將進行詳細說明。The
框架200可以以附著多個掩模100的形式形成。包括最外圍邊緣在內,框架200可以包括沿著第一方向(例如,橫向)、第二方向(例如,豎向)形成的多個棱角。這種多個棱角可以在框架200上劃分用於附著掩模100的區域。The
框架200可以包括大概呈四角形狀、方框形狀的邊緣框架部210。邊緣框架部210的內部可以是中空形狀。即,邊緣框架部210可以包括中空區域R。框架200可以由因瓦合金、超級因瓦合金、鋁、鈦等金屬材料形成,考慮到熱變形,優選由與掩模具有相同熱膨脹係數的因瓦合金、超級因瓦合金、鎳、鎳-鈷等材料形成,這些材料均可應用於所有作為框架200的構成要素的邊緣框架部210、掩模單元片材部220。The
另外,框架200具備多個掩模單元區域CR,並且可以包括連接到邊緣框架部210的掩模單元片材部220。掩模單元片材部220可以與掩模100相同地通過壓延形成,或者也可以通過使用如電鑄的其他成膜工藝形成。另外,掩模單元片材部220可以通過雷射劃線、蝕刻等在平面狀片材(sheet)上形成多個掩模單元區域CR後,連接到邊緣框架部210。或者,掩模單元片材部220可以將平面狀的片材連接到邊緣框架部210後,通過雷射劃線、蝕刻等形成多個掩模單元區域CR。本說明書中主要對首先在掩模單元片材部220形成多個掩模單元區域CR後,連接到邊緣框架部210的情況進行說明。In addition, the
掩模單元片材部220可以包括邊緣片材部221以及第一柵格片材部223、第二柵格片材部225中的至少一種。邊緣片材部221以及第一柵格片材部223、第二柵格片材部225是指在同一片材上劃分的各個部分,它們彼此之間形成一體。The mask
邊緣片材部221可以實質上連接到邊緣框架部210。因此,邊緣片材部221可以具有與邊緣框架部210對應的大致四角形狀、方框形狀。The
另外,第一柵格片材部223可以沿著第一方向(橫向)延伸形成。第一柵格片材部223以直線形態形成,其兩端可以連接到邊緣片材部221。當掩模單元片材部220包括多個第一柵格片材部223時,各個第一柵格片材部223優選具有相同的間距。In addition, the first
另外,進一步地,第二柵格片材部225可以沿著第二方向(豎向)延伸形成,第二柵格片材部225以直線形態形成,其兩端可以連接到邊緣片材部221。第一柵格片材部223和第二柵格片材部225可以彼此垂直交叉。當掩模單元片材部220包括多個第二柵格片材部225時,各個第二柵格片材部225優選具有相同的間距。In addition, further, the second
另一方面,第一柵格片材部223之間的間距和第二柵格片材部225之間的間距,可以根據掩模單元C的尺寸而相同或不同。On the other hand, the spacing between the first
第一柵格片材部223以及第二柵格片材部225雖然具有薄膜形態的薄的厚度,但是垂直於長度方向的截面的形狀可以是諸如矩形、如梯形的四邊形形狀、三角形形狀等,邊、角的一部分可以形成圓形。截面形狀可以在雷射劃線、蝕刻等過程中進行調節。Although the first
邊緣框架部210的厚度可以大於掩模單元片材部220的厚度。由於邊緣框架部210負責框架200的整體剛性,可以以數mm至數十cm的厚度形成。The thickness of the
就掩模單元片材部220而言,實際上製造厚片材的工藝困難,過厚,則有可能在OLED 像素沉積工藝中有機物源600(參照圖22)堵塞通過掩模100的路徑。相反,過薄,則有可能難以確保足以支撐掩模100的剛性。由此,掩模單元片材部220優選比邊緣框架部210的厚度薄,但是比掩模100更厚。掩模單元片材部220的厚度可以約為0.1mm至1mm。並且,第一柵格片材部223、第二柵格片材部225的寬度可以約為1~5mm。Regarding the mask
在平面狀片材中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外,可以提供多個掩模單元區域CR(CR11~CR56)。從另一個角度來說,掩模單元區域CR可以是指在邊緣框架部210的中空區域R中,除了邊緣片材部221、第一柵格片材部223、第二柵格片材部225佔據的區域以外的空白區域。In the planar sheet, in addition to the area occupied by the
隨著掩模100的單元C與該掩模單元區域CR對應,實際上可以用作通過掩模圖案P沉積OLED的像素的通道。如前所述,一個掩模單元C與智慧手機等的一個顯示器對應。一個掩模100中可以形成有用於構成一個單元C的掩模圖案P。或者,一個掩模100具備多個單元C且各個單元C可以與框架200的各個單元區域CR對應,但是為了精確地對準掩模100,需要避免大面積掩模100,優選為具備一個單元C的小面積掩模100。或者,也可以是具有多個單元C的一個掩模100與掩模200的一個單元區域CR對應。此時,為了精確地對準,可以考慮具有2-3個單元C的掩模100與掩模200的一個單元區域CR對應。As the cell C of the
掩模200具備多個掩模單元區域CR,可以將各個掩模100以各個掩模單元C與各個掩模單元區域CR分別對應的方式附著。各個掩模100可以包括形成有多個掩模圖案P的掩模單元C以及掩模單元C周邊的虛擬部(相當於除了單元C以外的掩模膜110部分)。虛擬部可以只包括掩模膜110,或者可以包括形成有與掩模圖案P類似形態的規定的虛擬圖案的掩模膜110。掩模單元C與框架200的掩模單元區域CR對應,虛擬部的一部分或者全部可以附著至框架200(掩模單元片材部220)。由此,掩模100和框架200可以形成一體式結構。The
另一方面,根據另一實施例,框架不是以將掩模單元片材部220附著至邊緣框架部210的方式製造,而是可以使用在邊緣框架部210的中空區域R部分直接形成與邊緣框架部210成為一體的柵格框架(相當於柵格片材部223、225)的框架。這種形態的框架也包括至少一個掩模單元區域CR,可以使掩模100與掩模單元區域CR對應,以製造框架一體型掩模。On the other hand, according to another embodiment, the frame is not manufactured by attaching the mask
以下,對框架一體型掩模的製造過程進行說明。Hereinafter, the manufacturing process of the frame-integrated mask will be described.
首先,可以提供圖4以及圖5中所述的框架200。圖6是示出本發明的一實施例涉及的框架200的製造過程的示意圖。First, the
參照圖6的(a),提供邊緣框架部210。邊緣框架部210可以是包括中空區域R的方框形狀。Referring to (a) of FIG. 6, an
其次,參照圖6的(b),製造掩模單元片材部220。掩模單元片材部220使用壓延、電鑄或者其他的成膜工藝,製造平面狀的片材後,通過雷射劃線、蝕刻等,去除掩模單元區域CR部分,從而可以製造。本說明書中,以形成6×5的掩模單元區域CR(CR11~CR56)為例進行說明。可以存在5個第一柵格片材部223以及4個第二柵格片材部225。Next, referring to FIG. 6( b ), the mask
然後,可以將掩模單元片材部220與邊緣框架部210對應。在對應的過程中,可以在拉伸F1~F4掩模單元片材部220的所有側部以使掩模單元片材部220平坦伸展的狀態下,使邊緣片材部221與邊緣框架部210對應。在一側部也能以多個點(作為圖6的(b)的例,1~3點)夾持掩模單元片材部220並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2掩模單元片材部220。Then, the mask
然後,使掩模單元片材部220與邊緣框架部210對應時,可以將掩模單元片材部220的邊緣片材部221以焊接W方式附著。優選地,焊接W所有側部,以便掩模單元片材部220牢固地附著至邊緣框架部210,但不限於此。應當最大限度地接近框架部210的棱角側進行焊接W,才能最大限度地減少邊緣框架部210和掩模單元片材部220之間的翹起空間,並提升黏合性。焊接W部分可以以線(line)或者點(spot)形狀生成,具有與掩模單元片材部220相同的材料,並可以成為將邊緣框架部210和掩模單元片材部220連接成一體的媒介。Then, when the mask
圖7是示出本發明的另一實施例涉及的框架的製造過程的示意圖。圖6的實施例首先製造具備掩模單元區域CR的掩模單元片材部220後,附著至邊緣框架部210,而圖7的實施例將平面狀的片材附著至邊緣框架部210後,形成掩模單元區域CR部分。Fig. 7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. The embodiment of FIG. 6 first manufactures the mask
首先,與圖6的(a)相同地提供包括中空區域R的邊緣框架部210。First, the
然後,參照圖7的(a),可以使平面狀的片材(平面狀的掩模單元片材部220')與邊緣框架部210對應。掩模單元片材部220'是還未形成掩模單元區域CR的平面狀態。在對應的過程中,可以在拉伸F1~F4掩模單元片材部220'的所有側部以使掩模單元片材部220'平坦伸展狀態下,使其與邊緣框架部210對應。在一側部也能以多個點(作為圖7的(a)的例,1~3點)夾持單元片材部220'並進行拉伸。另一方面,也可以不是所有側部,而是沿著一部分側部方向,拉伸F1、F2掩模單元片材部220'。Then, referring to FIG. 7( a ), a planar sheet (a planar mask
然後,使掩模單元片材部220'與邊緣框架部210對應時,可以將掩模單元片材部220'的邊緣部分以焊接W方式進行附著。優選地,焊接W所有側部,以便掩模單元片材部220'牢固地附著至邊緣框架部220,但不限於此。應當最大限度地接近邊緣框架部210的棱角側進行焊接W,才能最大限度地減少邊緣框架部210和掩模單元片材部220'之間的翹起空間,並提升黏合性。焊接W部分可以以線(line)或者點(spot)形狀生成,與掩模單元片材部220'具有相同材料,並可以成為將邊緣框架部210和掩模單元片材部220'連接成一體的媒介。Then, when the mask unit sheet portion 220' corresponds to the
然後,參照圖7的(b),在平面狀的片材(平面狀的掩模單元片材部220')上形成掩模單元區域CR。通過雷射劃線、蝕刻等,去除掩模單元區域CR部分的片材,從而可以形成掩模單元區域CR。本說明書中,以形成6×5的掩模單元區域CR(CR11~CR56)為例進行說明。當形成掩模單元區域CR時,可以構成掩模單元片材部220,其中,與邊緣框架部210焊接W的部分成為邊緣片材部221,並且具備5個第一柵格片材部223以及4個第二柵格片材部225。Then, referring to FIG. 7( b ), the mask cell region CR is formed on the planar sheet (the planar mask
圖8是示出用於形成現有的高解析度OLED的掩模的示意圖。FIG. 8 is a schematic diagram showing a mask used to form an existing high-resolution OLED.
為了實現高解析度的OLED,圖案的尺寸逐漸變小,其使用的掩模金屬膜的厚度也有必要變薄。如圖8的(a)所示,如果想要實現高解析度的OLED像素6,則在掩模10'中需要縮減像素間隔及像素尺寸等(PD->PD')。此外,為了防止因陰影效應導致OLED像素6不均勻地沉積,有必要將掩模10'的圖案傾斜地形成14。然而,在具有約30~50μm的厚度T1的較厚的掩模10'中將圖案傾斜地形成14的過程中,由於在細微的像素間隔PD'和像素尺寸上很難形成與其匹配的圖案13,因此成為加工工藝中導致收率降低的因素。換而言之,具有細微的像素間隔PD'且為了將圖案傾斜地形成14,有必要使用較薄厚度的掩模10'。In order to realize a high-resolution OLED, the size of the pattern gradually becomes smaller, and the thickness of the mask metal film used therefor must also become thinner. As shown in FIG. 8(a), if a high-
特別是,為了實現UHD級別的高解析度,如圖8的(b)所示,只有使用具有20μm以下厚度T2的薄的掩模10',才能進行細微的圖案化。此外,為了實現UHD以上的超高解析度,可考慮使用具有10μm厚度T2的薄掩模10'。In particular, in order to achieve high resolution of the UHD level, as shown in FIG. 8(b), only a thin mask 10' with a thickness T2 of 20 μm or less can be used for fine patterning. In addition, in order to achieve ultra-high resolution above UHD, a thin mask 10' with a thickness T2 of 10 μm can be considered.
圖9是示出本發明的一實施例涉及的掩模100的示意圖。FIG. 9 is a schematic diagram showing a
掩模100可包括形成有多個掩模圖案P的掩模單元C及掩模單元C周圍的虛擬部DM。如上所述,利用壓延工藝,電鑄等生成的金屬片材可製造掩模100,掩模100中可形成有一個單元C。虛擬部DM與除單元C以外的掩模膜110[掩模金屬膜110]部分對應,且可以只包括掩模膜110,或者包括形成有類似於掩模圖案P形態的預定的虛擬部圖案的掩模膜110。虛擬部DM對應掩模100的邊緣且虛擬部DM的一部分或者全部可附著在框架200[掩模單元片材部220]。The
掩模圖案P的寬度可小於40μm,掩模100的厚度可約為5~20μm。由於框架200具有多個掩模單元區域CR(CR11~CR56),因此也可具有多個對應每個掩模單元區域CR(CR11~CR56)的掩模單元C(C11~C56)的掩模100。The width of the mask pattern P may be less than 40 μm, and the thickness of the
由於掩模100的一面101是接觸並附著在框架200的一面,因此優選為平坦面。可利用以下敘述的平坦化工藝使一面101變為平坦的同時被鏡面化。掩模100的另一面102可與以下敘述的模板50的一面相面對。Since one
以下將對製造掩模金屬膜110'並將其支撐在模板50上來製造掩模100,通過將支撐有掩模100的模板50裝載在框架200上並將掩模100附著在框架200來製造框架一體型掩模的一系列工藝進行說明。In the following, the mask metal film 110' will be manufactured and supported on the
圖10是示出本發明一實施例涉及的以壓延(rolling)方式製造掩模金屬膜的過程的示意圖。圖11是示出本發明另一實施例涉及的以電鑄(electroforming)方式製造掩模金屬膜的過程的示意圖。FIG. 10 is a schematic diagram showing a process of manufacturing a mask metal film by rolling according to an embodiment of the present invention. FIG. 11 is a schematic diagram showing a process of manufacturing a mask metal film by electroforming according to another embodiment of the present invention.
首先,可準備掩模金屬膜110。作為一實施例,可利用壓延方式準備掩模金屬膜110。First, the
參照圖10的(a),由壓延工藝製造的金屬片材基於製造工藝可具有數十至數百μm的厚度。如前面在圖8中所述,為了得到UHD級別的高解析度只有使用具有20μm以下厚度的薄掩模金屬膜110才能進行細微的圖案化,為了獲得UHD以上的超高解析度,需要使用具有10μm厚度的薄掩模金屬膜110。然而,由壓延(rolling)工藝生成的掩模金屬膜110'具有約為25~500μm的厚度,因此有必要將厚度縮小。Referring to (a) of FIG. 10, the metal sheet manufactured by the rolling process may have a thickness of tens to hundreds of μm based on the manufacturing process. As described above in Figure 8, in order to obtain UHD-level high resolution, only a thin
因此,可進一步執行對掩模金屬膜110'的一面進行平坦化PS的工藝。其中,平坦化PS是指對掩模金屬膜110'的一面(上面)進行鏡面化的同時,通過部分地去除掩模金屬膜110'的上部,使厚度變薄。平坦化PS可利用CMP(Chemical Mechanical Polishing)方法執行,只要是公知的CMP方法,可不受限制地使用。此外,利用化學濕式蝕刻(chemical wet etching)或者乾式蝕刻(dry etching)方法可使掩模金屬膜110'的厚度變薄。除此之外,可不受限制地使用使掩模金屬膜110'的厚度變薄的平坦化的工藝。Therefore, a process of planarizing PS on one side of the mask metal film 110' can be further performed. Among them, the planarization PS means that one surface (upper surface) of the mask metal film 110' is mirror-finished, and at the same time, the upper portion of the mask metal film 110' is partially removed to make the thickness thinner. The planarization PS can be performed by the CMP (Chemical Mechanical Polishing) method, and it can be used without limitation as long as it is a well-known CMP method. In addition, the thickness of the mask metal film 110' can be thinned by using a chemical wet etching or dry etching method. In addition to this, a planarization process that thins the thickness of the mask metal film 110' can be used without limitation.
在執行平坦化PS的過程中,作為一例,在CMP過程中,可控制掩模金屬膜110'上部面的表面粗糙度Ra。優選地,可執行用於進一步減小表面粗糙度的鏡面化。或者,作為另一例子,還可以通過化學濕式蝕刻或者乾式蝕刻過程進行平坦化PS之後,再附加進行額外的CMP工藝等拋光工藝以減小表面粗糙度Ra。In the process of performing the planarization PS, as an example, during the CMP process, the surface roughness Ra of the upper surface of the mask metal film 110' can be controlled. Preferably, mirroring for further reducing the surface roughness can be performed. Or, as another example, after the PS is planarized through a chemical wet etching or dry etching process, an additional polishing process such as a CMP process may be additionally performed to reduce the surface roughness Ra.
如此,可將掩模金屬膜110'製成約50μm以下較薄的厚度。由此,掩模金屬膜110的厚度優選約以2μm至50μm的厚度形成,更優選地,厚度可約以5μm至20μm左右形成。然而,並非一定受限於此。In this way, the mask metal film 110' can be made into a thinner thickness of about 50 μm or less. Therefore, the thickness of the
參照圖10的(b),如同圖10的(a),可通過縮減由壓延工藝製造的掩模金屬膜110'的厚度來製造掩模金屬膜110。只是,掩模金屬膜110'以中間夾設有臨時黏合部55的狀態黏合在以下敘述的模板50上,並在這種狀態下執行平坦化PS工藝,從而縮減厚度。10(b), like FIG. 10(a), the
作為另一實施例,可以電鑄方式準備掩模金屬膜110。As another example, the
參照圖11的(a),準備導電性基材21。為了能夠執行電鑄(electroforming),母板的基材21可為導電性材料。母板在電鑄中可作為陰極(cathode)電極使用。Referring to (a) of FIG. 11, a
作為導電性材料,對於金屬,表面可能生成有金屬氧化物,金屬製造過程中可能會摻入雜質,對於多晶矽基材,可能存在夾雜物或者晶界(Grain Boundary),對於導電性高分子基材,可能存在很高的含雜質的可能性,可能強度、耐酸性等比較脆弱。如金屬氧化物、雜質、夾雜物、晶界等妨礙在母板(或者陰極)的表面上均勻地形成電磁場的要素被稱之為“缺陷”(Defect)。由於缺陷(Defect),上述材料的陰極上不能引入均勻的電磁場,從而可使鍍膜110[或者掩模金屬膜110]的一部分不均勻地形成。As a conductive material, for metals, metal oxides may be formed on the surface, and impurities may be mixed in the metal manufacturing process. For polysilicon substrates, there may be inclusions or grain boundaries (Grain Boundary). For conductive polymer substrates , There may be a high possibility of impurities, and may be weak in strength and acid resistance. Elements such as metal oxides, impurities, inclusions, and grain boundaries that hinder the uniform formation of electromagnetic fields on the surface of the mother board (or cathode) are called "defects". Due to defects, a uniform electromagnetic field cannot be introduced into the cathode of the above-mentioned materials, so that a part of the plating film 110 [or the mask metal film 110] may be formed unevenly.
在實現UHD級別以上的超高畫質像素的過程中,鍍膜及鍍膜圖案[掩模圖案P]的不均勻會對像素的形成造成不良的影響。例如,目前的QHD畫質為500~600PPI(pixel per inch),像素的尺寸達到約30~50μm,而4K UHD、8K UHD高清晰具有比之更高的~860PPI,~1600PPI等解析度。而且直接應用在VR機器的微顯示器或插入VR機器中並使用的微顯示器以大約2000PPI以上級的超高畫質作為目標,且像素尺寸約為5~10μm左右。在此使用的FMM、陰影掩模的圖案寬度可為數μm~數十μm,優選小於30μm,因此即便是數μm的缺陷,也在掩模的圖案尺寸中佔據大幅比重。而且,為了去除上述材料的陰極中的缺陷,可進行用於去除金屬氧化物、雜質等的附加工藝,在該工藝中還會引發陰極材料被蝕刻等的其他缺陷。In the process of realizing ultra-high image quality pixels above the UHD level, the unevenness of the coating film and the coating pattern [mask pattern P] will adversely affect the formation of the pixel. For example, the current QHD image quality is 500~600PPI (pixel per inch), and the pixel size is about 30~50μm, while 4K UHD and 8K UHD have higher resolutions of ~860PPI, ~1600PPI. In addition, the micro-display directly applied to the VR machine or the micro-display inserted into the VR machine aims at ultra-high image quality above about 2000PPI, and the pixel size is about 5-10μm. The pattern width of the FMM and shadow mask used here can be several μm to several tens of μm, preferably less than 30 μm. Therefore, even defects of several μm occupy a large proportion in the pattern size of the mask. Moreover, in order to remove the defects in the cathode of the above-mentioned materials, an additional process for removing metal oxides, impurities, etc. may be performed, and other defects such as etching of the cathode material may also be caused in this process.
因此,本發明可使用單晶材料的母板(或者陰極)。特別地,優選為單晶矽材料。為了具有導電性,單晶矽材料的母板中可執行1019 /cm3 以上高濃度摻雜。摻雜可對母板的全部進行,也可僅對母板表面部分進行。Therefore, the present invention can use a mother board (or cathode) of a single crystal material. In particular, it is preferably a single crystal silicon material. In order to have conductivity, a high-concentration doping of 10 19 /cm 3 or more can be performed in the mother board of monocrystalline silicon material. The doping can be performed on the entire motherboard or only on the surface of the motherboard.
另外,作為單晶材料可使用Ti、Cu、Ag等金屬,GaN、SiC、GaAs、GaP、AlN、InN、InP、Ge等半導體,石墨(graphite)、石墨烯(graphene)等碳系材料,包括CH3NH3PbCl3、CH3NH3PbBr3、CH3NH3PbI3、SrTiO3等的鈣鈦礦(perovskite)結構等的超導體用單晶陶瓷,航空器部件用單晶超耐熱合金等。對於金屬、碳系材料,基本上為導電性材料。對於半導體材料,為了具有導電性可進行1019 /cm3 以上高濃度的摻雜。對於其他材料,可通過進行摻雜或者形成氧空位(oxygen vacancy)等來形成導電性。摻雜可對母板的全部進行,也可僅對母板表面部分進行。In addition, as single crystal materials, metals such as Ti, Cu, Ag, semiconductors such as GaN, SiC, GaAs, GaP, AlN, InN, InP, Ge, and carbon-based materials such as graphite and graphene can be used, including Single crystal ceramics for superconductors such as CH3NH3PbCl3, CH3NH3PbBr3, CH3NH3PbI3, SrTiO3, etc., perovskite structures, and single crystal superalloys for aircraft parts. Metals and carbon-based materials are basically conductive materials. For semiconductor materials, doping at a high concentration of 10 19 /cm 3 or more can be performed in order to have conductivity. For other materials, conductivity can be formed by doping or forming oxygen vacancy. The doping can be performed on the entire motherboard or only on the surface of the motherboard.
對於單晶材料,由於其不存在缺陷,因此具有電鑄時由於在整個表面均勻地形成電磁場,從而可均勻地形成鍍膜110的優點。通過均勻的鍍膜製造的框架一體型掩模100、200能夠進一步改善OLED像素的畫質水平。此外,由於無需執行去除、解除缺陷的額外的工藝,因此具有降低工藝成本、提高生產效率的優點。For the single crystal material, since it does not have defects, it has the advantage of uniformly forming an electromagnetic field on the entire surface during electroforming, so that the
重新參照圖11的(a),然後,通過將導電性基材21作為母板[陰極(Cathode Body)]使用,並將陽極(未圖示)相隔地佈置,從而利用電鑄在導電性基材21上可形成鍍膜110[或者掩模金屬膜110]。鍍膜110可形成於與陽極相面對且電磁場可作用的導電性基材21的露出的上部面和側面上。除了導電性基材21的側面以外還可在導電性基材21的下部面的局部生成鍍膜110。11(a) again, then, by using the
然後,利用雷射將鍍膜110的邊緣部分切除D,或者僅在鍍膜110上部形成光刻膠層後對露出的鍍膜110的部分進行蝕刻並去除D。由此,如圖11的(b)所示,可將鍍膜110從導電性基材21分離。Then, the edge portion of the
另外,將鍍膜110從導電性基材21分離之前,可執行熱處理H。本發明的特徵在於,為了降低掩模100的熱膨脹係數的同時為了防止因熱導致的掩模100及掩模圖案P的變形,將鍍膜110從導電性基材21[或者母板或者陰極]分離之前執行熱處理H。熱處理可以300℃至800℃的溫度執行。In addition, before separating the
通常由電鑄生成的因瓦合金薄板的熱膨脹係數高於由壓延生成的因瓦合金薄板的熱膨脹係數。因此,通過對因瓦合金薄板進行熱處理可降低熱膨脹係數,但是在該熱處理過程中因瓦合金薄板可發生剝離、變形等。這是由於只對因瓦合金薄板進行熱處理,或者只對臨時黏合在導電性基材21的上部面的因瓦合金薄板進行熱處理而造成的。然而,本發明不僅在導電性基材21的上部而且側面和下部面的局部上也形成鍍膜110,因此即便進行熱處理H,也不會發生剝離、變形等。換而言之,由於導電性基材21與鍍膜110以緊密黏合的狀態進行熱處理,因此具有可防止因熱處理導致的剝離、變形等,並能夠穩定地進行熱處理的優點。Generally, the thermal expansion coefficient of Invar alloy sheet produced by electroforming is higher than that of Invar alloy sheet produced by rolling. Therefore, the thermal expansion coefficient of the Invar alloy sheet can be reduced by heat-treating the Invar alloy sheet, but the Invar alloy sheet may be peeled, deformed, etc. during the heat treatment process. This is caused by the heat treatment of only the Invar alloy sheet, or the heat treatment of only the Invar alloy sheet temporarily bonded to the upper surface of the
由電鑄工藝生成的掩模金屬膜110其厚度可薄於由壓延工藝生成的掩模金屬膜110。由此,雖然還可以省略用於縮減厚度的圖案化PS工藝,但基於鍍金掩模金屬膜110的表面層的成分、結晶結構/細微結構,可具有不同蝕刻特徵,因此有必要通過執行圖案化PS來控制表面特性、厚度。The thickness of the
圖12至圖13是示出本發明的一實施例涉及的在模板50上黏合掩模金屬膜110並形成掩模100進而製造掩模支撐模板的過程的示意圖。FIGS. 12 to 13 are schematic diagrams illustrating a process of bonding a
參照圖12的(a),可提供模板50(template)。模板50是一種媒介,其一面上附著有掩模100並以支撐掩模100的狀態移動掩模100。模板50的一面優選為平坦面以支撐並搬運平坦的掩模100。中心部50a可對應掩模金屬膜110的掩模單元C,邊緣部50b可對應掩模金屬膜110的虛擬部DM。為了能夠整體上支撐掩模金屬膜110,模板50的面積大於掩模金屬膜110的面積,且可為平坦形狀。Referring to FIG. 12(a), a template 50 (template) may be provided. The
模板50優選為透明材料以便於在將掩模100與框架200對準並附著的過程中進行視覺(vision)觀察等。此外,採用透明材料時,也可使雷射穿過。作為透明的材料可使用玻璃(glass)、矽膠(silica)、耐熱玻璃,石英(quartz),氧化鋁(Al2O3)、硼矽酸鹽玻璃(borosilicate glass)、氧化鋯(zirconia)等材料。作為一例,模板50可使用硼矽酸鹽玻璃中具有優異的耐熱性、化學耐久性、機械強度、透明性等的BOROFLOAT®33材料。此外,BOROFLOAT®33的熱膨脹係數約為3.3,熱膨脹係數與因瓦合金掩模金屬膜110相差很小,具有容易控制掩模金屬膜110的優點。The
另外,為了防止與掩模金屬膜110[或者掩模100]的分界之間發生氣隙(air gap),模板50與掩模金屬膜110接觸的一面可為鏡面。考慮到這一點,模板50的一面的表面粗糙度Ra可為100nm以下。為了實現表面粗糙度Ra為100nm以下的模板50,模板50可使用晶圓(wafer)。晶圓(wafer)其表面粗糙度Ra約為10nm左右,市面上具有很多產品,表面處理工藝廣為所知,因此可作為模板50使用。由於模板50的表面粗糙度Ra為nm級別,因此可為沒有氣隙或者幾乎沒有氣隙的水準,從而基於雷射焊接容易生成焊珠WB,對掩模圖案P的對準誤差不產生影響。In addition, in order to prevent an air gap from occurring between the boundary with the mask metal film 110 [or the mask 100], the contact surface of the
為了使從模板50的上部照射的雷射L能夠到達掩模100的焊接部WP(執行焊接的區域),模板50上可形成有雷射貫穿孔51。雷射貫穿孔51能夠以與焊接部WP的位置和數量對應的方式形成在模板50上。由於在掩模100的邊緣或者虛擬部DM部分上以預定的間隔佈置多個焊接部WP,因此雷射貫穿孔51也與之對應地以預定間隔形成多個。作為一例,由於在掩模100的兩側(左側/右側)虛擬部DM部分上以預定間隔佈置多個焊接部WP,因此雷射貫穿孔51也可以在模板50的兩側(左側/右側)以預定間隔可形成多個。In order for the laser L irradiated from the upper portion of the
雷射貫穿孔51不必一定與焊接部WP的位置和數量對應。例如,也可以僅對雷射貫穿孔51中的一部分進行雷射L照射,並進行焊接。此外,與焊接部WP不對應的雷射貫穿孔51中的一部分在對準掩模100與模板50時也可以代替對準標記而使用。假設,模板50的材料對於雷射L的光透明,則也可以不形成雷射貫穿孔51。The laser through-
模板50的一面可形成臨時黏合部55。掩模100附著在框架200之前,臨時黏合部55可使掩模100[或者掩模金屬膜110]臨時附著在模板50的一面並支撐在模板50上。A
臨時黏合部55可使用基於加熱可分離的黏合劑或者黏合片材(thermal release type),基於照射UV可分離的黏合劑或者黏合片材(UV release type)。The temporary
作為一例,臨時黏合部55可使用液蠟(liquid wax)。液蠟可使用與半導體晶圓的拋光步驟等中使用的相同的蠟,其類型沒有特別限制。作為主要用於控制與維持力有關的黏合力、耐衝擊性等的樹脂成分,液蠟可包括如丙烯酸、醋酸乙烯酯,尼龍及各種聚合物的物質及溶劑。作為一例,臨時黏合部55可使用包括作為樹脂成分的丁腈橡膠(ABR,Acrylonitrile butadiene rubber),作為溶劑成分的n-丙醇的SKYLIQUID ABR-4016。在臨時黏合部55上使用旋塗方法形成液蠟。As an example, liquid wax (liquid wax) can be used for the
作為液蠟的臨時黏合部55在高於85℃~100℃的溫度下黏性下降,在低於85℃的溫度下黏性增加,一部分可如固體固化,從而可將掩模金屬膜110'與模板50固定黏合。Temporary
然後,參照圖12的(b),可在模板50上黏合掩模金屬膜110'。將液蠟加熱至85℃以上,將掩模金屬膜110'接觸到模板50上之後,使掩模金屬膜110'和模板50通過滾軸之間從而執行黏合。Then, referring to FIG. 12( b ), the
根據一實施例,在模板50上約以120℃烘焙(baking)60秒,將臨時黏合部55的溶劑氣化後,可立即執行掩模金屬膜層壓(lamination)工藝。層壓通過在一面上形成有臨時黏合部55的模板50上裝載掩模金屬膜110'並使其通過約100℃的上部滾軸(roll)和約0℃的下部滾軸之間來執行。其結果,掩模金屬膜110'可與模板50接觸且中間夾設有臨時黏合部55。According to an embodiment, after baking on the
圖14是示出本發明的一實施例涉及的臨時黏合部55的放大截面示意圖。作為又一例,臨時黏合部55可使用熱剝離膠帶(thermal release tape)。熱剝離膠帶的中間佈置有PET膜等芯膜56(core film),芯膜56的兩面上佈置有可熱剝離的黏合層57a、57b(thermal release adhesive),黏合層57a、57b的外輪廓可為佈置有剝離膜/離型膜58a、58b的形態。其中,佈置在芯膜56的兩面上的黏合層57a、57b的相互剝離溫度可相互不同。FIG. 14 is an enlarged schematic cross-sectional view showing the
根據一實施例,在去除剝離膜/離型膜58a、58b的狀態下,熱剝離膠帶的下部面[第二黏合層57b]黏合在模板50上,熱剝離膠帶的上部面[第一黏合層57a]可黏合在掩模金屬膜110'上。由於第一黏合層57a和第二黏合層57b具有相互不同的剝離溫度,因此,後述的圖17中將模板50從掩模100分離時,通過施加使第一黏合層57a剝離的熱,掩模100可從模板50和臨時黏合部55分離。According to one embodiment, with the release film/
接下來,再參照圖12的(b),可平坦化PS掩模金屬膜110'的一面。圖10中如上所述,由壓延工藝製造的掩模金屬膜110'可通過平坦化PS工藝縮減厚度(110'->110)。此外,為了控制表面特性、厚度,也可對由電鑄工藝製造的掩模金屬膜110進行平坦化PS工藝。Next, referring to FIG. 12(b) again, one side of the PS mask metal film 110' can be planarized. As described above in FIG. 10, the mask metal film 110' manufactured by the calendering process can be reduced in thickness (110'->110) through the planarization PS process. In addition, in order to control the surface characteristics and thickness, the
由此,如圖12的(c)所示,隨著掩模金屬膜110'的厚度縮減(110'->110),掩模金屬膜110的厚度可約為5μm至20μm。Thus, as shown in (c) of FIG. 12, as the thickness of the
然後,參照圖13的(d),可在掩模金屬膜110上形成被圖案化的絕緣部25。絕緣部25可通過印刷法等由光刻膠材料形成。Then, referring to (d) of FIG. 13, the patterned insulating
接下來,可對掩模金屬膜110進行蝕刻。可不受限制地使用乾式蝕刻,濕式蝕刻等方法,經蝕刻的結果,由絕緣部25之間的空白空間26露出的掩模金屬膜110部分可被蝕刻。掩模金屬膜110中被蝕刻的部分構成掩模圖案P,從而可製造形成有多個掩模圖案P的掩模100。Next, the
然後,參照圖13的(e),通過去除絕緣部25可結束用於支撐掩模100的模板50的製造。Then, referring to FIG. 13( e ), the manufacturing of the
由於框架200具有多個掩模單元區域CR(CR11~CR56),因此還可具有多個掩模100,所述掩模100具有與每個掩模單元區域CR(CR11~CR56)對應的掩模單元C(C11~C56)。此外,可具有多個模板50,其用於分別支撐多個掩模100的每一個。Since the
圖15是示出本發明的一實施例涉及的將掩模支撐模板裝載在框架上的過程的示意圖。FIG. 15 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention.
參照圖15,模板50可基於真空吸盤90移送。可用真空吸盤90吸附黏合有掩模100的模板50的面的反面並移送。真空吸盤90可與向x、y、z、θ軸移動的移動手段(未圖示)連接。此外,真空吸盤90可以與通過吸附模板50來進行翻轉(flip)的翻轉手段(未圖示)連接。如圖16的(b)所示,在真空吸盤90吸附模板50並翻轉後向框架200上移送模板50的過程中,同樣不影響掩模100的黏合狀態和對準狀態。15, the
圖16是示出本發明的一實施例涉及的將工藝區域溫度上升之後將模板裝載在框架上並將掩模對應至框架的單元區域的狀態的示意圖。圖16中列舉了將一個掩模100對應/附著在單元區域CR上的方式,也可以進行將多個掩模100同時對應到所有的單元區域CR並將掩模100附著在框架200上的過程。這種情況下,可具有用於分別支撐多個掩模100的多個模板50。16 is a schematic diagram showing a state in which a template is mounted on a frame after the temperature of a process area is increased, and the mask is corresponding to a unit area of the frame according to an embodiment of the present invention. The method of corresponding/attaching one
然後,參照圖16,使工藝區域的溫度上升ET之後,可將掩模100對應至框架200的一個掩模單元區域CR。本發明的特徵在於,在將掩模100對應至框架200的掩模單元區域CR的過程中,不向掩模100施加任何拉伸力。Then, referring to FIG. 16, after the temperature of the process area is increased by ET, the
框架200的掩模單元片材部220由於具有很薄的厚度,因此如果掩模100以被施加拉伸力的狀態附著在掩模單元片材部220上,則掩模100上殘留的拉伸力可能會作用在掩模單元片材部220及掩模單元區域CR上,並使其發生變形。因此,應以不施加拉伸力於掩模100上的狀態將掩模100附著在掩模單元片材部220上。因此,可防止施加在掩模100上的拉伸力反過來以張力(tension)的形式作用在框架200上使框架200[或者掩模單元片材部220]發生變形。Since the mask
只是,對掩模100不施加拉伸力地附著在框架200[或者掩模單元片材部220]上以製造框架一體型掩模,而且將該框架一體型掩模用於像素沉積工藝時可發生一個問題。在約25~45℃左右溫度下執行像素沉積工藝時,掩模100以預定長度膨脹。即使是因瓦合金材料的掩模100,基於用於形成像素沉積工藝氣氛的10℃左右的溫度上升,其長度也會發生約1~3ppm的變化。例如,掩模100的總長度為500mm時,其長度可增加約5~15μm。由此,導致掩模100因自身的重量發生下垂,或者以固定在框架200的狀態被拉長並發生扭曲等變形,同時引發圖案P間的對準誤差變大的問題。However, the
因此,本發明的特徵在於,在高於常溫的非常溫溫度下,以對掩模100不施加拉伸力的狀態,將掩模100對應至框架200的掩模單元區域CR並附著。本說明書中表述為,在將工藝區域的溫度上升至第一溫度ET之後,將掩模100對應至框架200並附著。Therefore, the present invention is characterized in that the
“工藝區域”可指用於放置掩模100、框架200等構成要素,而且用於執行掩模100的附著工藝等的空間。工藝區域也可以是密封腔室內的空間,也可以是開放空間。而且,“第一溫度”可指,將框架一體型掩模用於OLED像素沉積工藝中時,等於或者高於像素沉積工藝溫度的溫度。考慮到像素沉積工藝溫度約為25~45℃,第一溫度可約為25℃至60℃。工藝區域的溫度上升可通過在腔室設置加熱手段,或者在工藝區域的周圍設置加熱手段的方法等來執行。The "process area" may refer to a space for placing constituent elements such as the
再參照圖16,將包括框架200的工藝區域的溫度上升至第一溫度ET之後,可將掩模100對應至掩模單元區域CR。或者,將掩模100對應至掩模單元區域CR之後,可將包括框架200的工藝區域的溫度上升至第一溫度ET。16 again, after the temperature of the process area including the
通過將模板50裝載在框架200[或者掩模單元片材部220]上,可將掩模100對應至掩模單元區域CR。控制模板50/真空吸盤90的位置的同時可通過顯微鏡觀察掩模100是否對應於掩模單元區域CR上。由於模板50擠壓掩模100,因此掩模100可與框架200緊貼。由於可通過控制模板50的位置便可將掩模100對應至掩模單元區域CR,因此可以不向掩模100直接施加任何拉伸力。By loading the
另外,進一步可將下部支撐體70佈置在框架200下部。下部支撐體70具有可進入框架邊緣部210的中空區域R內的尺寸且可為平板狀。此外,下部支撐體70的上部面也可形成有對應掩模單元片材部220形狀的預定的支撐槽(未圖示)。這種情況下,由於邊緣片材部221和第一柵格片材部223及第二柵格片材部225插在支撐槽中,因此掩模單元片材部220會被更加牢固地固定。In addition, the
下部支撐體70可擠壓掩模100接觸的掩模單元區域CR的反面。即,下部支撐體70通過向上部方向支撐掩模單元片材部220,從而可防止在附著掩模100的過程中掩模單元片材部220向下部方向發生下垂。與此同時,由於下部支撐體70和模板50向相互相反的方向擠壓掩模100的邊緣和框架200[或者掩模單元片材部220],因此可維持掩模100的對準狀態而不被打亂。The
如此,只通過在模板50上附著掩模100並將模板50裝載到框架200上,便可結束將掩模100對應至框架200的掩模單元區域CR上的過程,該過程中可做到對掩模100不施加任何拉伸力。In this way, only by attaching the
接下來,可以向掩模100照射雷射L並基於雷射焊接將掩模100附著在框架200上。由雷射焊接的掩模的焊接部WP部分上生成焊珠WB,焊珠WB可具有與掩模100/框架200相同的材料且與它們一體連接。Next, the laser L may be irradiated to the
圖17是示出本發明的一實施例涉及的將掩模100附著在框架200之後將掩模100與模板50分離的過程的示意圖。FIG. 17 is a schematic diagram showing a process of separating the
參照圖17,將掩模100附著在框架200之後,可將掩模100與模板50進行分離(debonding)。掩模100與模板50的分離可通過對臨時黏合部55進行加熱EP、化學處理CM、施加超聲波US,施加紫外線UV中至少任意一個而執行。由於掩模100維持附著在框架200的狀態,因此可只抬起模板50。作為一例,如果施加高於85℃~100℃的溫度的熱EP,則臨時黏合部55的黏性降低,掩模100與模板50的黏合力減弱,從而可分離掩模100與模板50。作為另一例,可通過利用將臨時黏合部55沉浸CM在IPA、丙酮、乙醇等化學物質中以使臨時黏合部55溶解、去除等方式來分離掩模100與模板50。作為另一例,通過施加超聲波US或者施加紫外線UV使掩模100與模板50的黏合力減弱,從而可分離掩模100與模板50。Referring to FIG. 17, after the
進一步而言,作為黏合掩模100與模板50的媒介的臨時黏合部55為TBDB黏合材料(temporary bonding & debonding adhesive),從而可使用各種分離(debonding)方法。Furthermore, the
作為一例,可使用基於化學處理CM的溶劑分離(Solvent Debonding)方法。可基於溶劑(solvent)的滲透使臨時黏合部55溶解並進行分離。此時,掩模100上已形成有圖案P,因此溶劑可通過掩模圖案P及掩模100與模板50的分界滲透。溶劑分離可在常溫(room temperature)下進行,由於無需額外的複雜的分離設備,因此相比於其他分離方法具有相對廉價的優點。As an example, a solvent separation (Solvent Debonding) method based on chemical treatment of CM can be used. The
作為另一例,可使用基於加熱EP的熱分離(Heat Debonding)方法。通過利用高溫的熱來誘導臨時黏合部55的分解,如果掩模100與模板50間的黏合力減弱,則可向上下方向或者左右方向進行分離。As another example, a heat separation (Heat Debonding) method based on heating EP can be used. By using high-temperature heat to induce the decomposition of the temporary
作為另一例,可使用基於加熱EP、施加紫外線UV等的剝離黏合劑分離(Peelable Adhesive Debonding)方法。當臨時黏合部55為熱剝離膠帶時,可利用剝離黏合劑分離方法來進行分離,該方法無需進行如熱分離方法的高溫熱處理且無需額外設置高價的熱處理設備,具有進行過程相對簡單的優點。As another example, a Peelable Adhesive Debonding (Peelable Adhesive Debonding) method based on heating EP, applying ultraviolet UV, or the like can be used. When the
作為另一例,可使用基於化學處理CM、施加超聲波US、施加紫外線UV等的常溫分離(Room Temperature Debonding)方法。如果在掩模100或者模板50的一部分(中心部)進行non-sticky處理,則通過使用臨時黏合部55只黏合在邊緣部分上。此外,分離時溶劑滲透到邊緣部分使臨時黏合部55溶解從而實現分離。該方法具有在黏合和分離的過程中除掩模100、模板50的邊緣區域以外的剩餘部分不發生直接的損失或者分離時不發生因黏合材料殘留物(residue)導致的缺陷等優點。此外,不同於熱分離法,由於在分離時無需高溫熱處理過程,因此具有可相對縮減工藝成本的優點。As another example, a room temperature separation (Room Temperature Debonding) method based on chemical treatment of CM, application of ultrasonic waves US, application of ultraviolet rays UV, and the like can be used. If the non-sticky process is performed on a part (central part) of the
圖18是示出本發明一實施例涉及的將掩模100對應至相鄰的框架200的單元區域CR的狀態的示意圖。FIG. 18 is a schematic diagram showing a state in which the
參照圖18,可將掩模100對應至與附著有掩模100的掩模單元區域CR111相鄰的掩模單元區域CR121。工藝區域的溫度可維持圖16中上升至第一溫度ET的狀態。由此,掩模100可以在不施加拉伸力的狀態下維持第一溫度的體積。Referring to FIG. 18, the
可通過將模板50裝載在框架200[或者掩模單元片材部220]上來將掩模100對應至掩模單元區域CR121。通過控制模板50的位置將掩模100對應至掩模單元區域CR121的方法與圖16的過程相同。另外,也可將掩模100首先對應至與掩模單元區域CR111相鄰的掩模單元區域CR121以外的其他掩模單元區域CR。The
接下來,可通過向掩模100照射雷射L並基於雷射焊接將掩模100附著在框架200上。雷射焊接的掩模的焊接部部分上形成有焊珠WB,焊珠WB可具有與掩模100/框架200相同的材料且與它們一體連接。Next, the
圖19是示出本發明一實施例涉及的將掩模100附著至相鄰的框架200的單元區域CR之後將掩模100與模板50分離的過程的示意圖。FIG. 19 is a schematic diagram illustrating a process of separating the
參照圖19,將掩模100附著在框架200之後,可將掩模100與模板50進行分離(debonding)。掩模100與模板50的分離可通過對臨時黏合部55進行加熱EP、化學處理CM、施加超聲波US、施加紫外線UV中至少任意一個而執行。由於掩模100維持附著在框架200的狀態,因此可只抬起模板50。這與圖17中敘述的內容相同。Referring to FIG. 19, after the
圖20是示出本發明一實施例涉及的將掩模附著到框架的狀態的示意圖。FIG. 20 is a schematic diagram showing a state in which a mask is attached to a frame according to an embodiment of the present invention.
然後,參照圖20,可執行將掩模100對應至剩餘的掩模單元區域CR並進行附著的過程。所有的掩模100可附著在框架200的掩模單元區域CR上。Then, referring to FIG. 20, a process of mapping and attaching the
現有的圖1的掩模10包括6個單元C1~C6,因此具有較長的長度,而本發明的掩模100包括一個單元C,因此具有較短的長度,因此PPA(pixel position accuracy)扭曲的程度會變小。假設包括多個單元C1~C6…的掩模10的長度為1m,並且在1m的總長度中發生10μm的PPA誤差,則本發明的掩模100可以隨著相對長度減小(相當於單元C數量減少)而將上述誤差範圍變成1/n。例如,本發明的掩模100長度為100mm,則具有從現有的掩模10的1m減小為1/10的長度,因此在100mm的總長度中發生1μm的PPA誤差,顯著降低對準誤差。The existing
另一方面,掩模100具備多個單元C,並且即使使各個單元C與框架200的各個單元區域CR對應仍處於對準誤差最小化的範圍內,則掩模100也可以與框架200的多個掩模單元區域CR對應。或者,具有多個單元C的掩模100也可以與一個掩模單元區域CR對應。在這種情況下,考慮到基於對準的工藝時間和生產性,掩模100優選具備盡可能少量的單元C。On the other hand, the
在本發明中,由於只需匹配掩模100的一個單元C並確認對準狀態即可,因此與同時匹配多個單元C(C1~C6)並需要確認全部對準狀態的現有方法相比,可以顯著縮短製造時間。In the present invention, it is only necessary to match one cell C of the
即,本發明的框架一體型掩模的製造方法與同時匹配6個單元C1~C6並同時確認6個單元C1~C6的對準狀態的現有方法相比,通過使包含於6個掩模100的各個單元C11~C16分別與一個單元區域CR11~CR16對應並通過確認各個對準狀態的6次過程,能夠明顯縮短時間。That is, the manufacturing method of the frame-integrated mask of the present invention is compared with the conventional method of matching 6 cells C1 to C6 at the same time and confirming the alignment state of the 6 cells C1 to C6 at the same time. Each of the cells C11~C16 corresponds to a cell area CR11~CR16, and the time can be significantly shortened through the 6 processes of confirming the alignment status of each.
另外,在本發明的框架一體型掩模的製造方法,在使30個掩模100分別與30個單元區域CR(CR11~CR56)對應並對準的30次的過程中的產品收率,可以明顯高於使分別包括6個單元C1~C6的5個掩模10(參照圖2的(a))與框架20對應並對準的5次過程中的現有產品的收率。由於在每次對應於6個單元C的區域中對準6個單元C1~C6的現有方法是明顯繁瑣且困難的作業,而且產品收率低。In addition, in the manufacturing method of the frame-integrated mask of the present invention, the product yield during 30 times of alignment and alignment of 30
圖21是示出本發明一實施例涉及的將掩模100附著至框架200的單元區域CR之後將工藝區域的溫度下降LT的過程的示意圖。FIG. 21 is a schematic diagram illustrating a process of lowering the temperature of the process area LT after attaching the
然後,參照圖21,將工藝區域的溫度下降至第二溫度LT。“第二溫度”可指低於第一溫度的溫度。考慮到第一溫度約為25℃至60℃,第二溫度以低於第一溫度為前提,可約為20℃至30℃,優選地,第二溫度可以是常溫。工藝區域的溫度下降可通過在腔室設置冷卻手段或者在工藝區域周圍設置冷卻手段的方法,以及常溫下自然冷卻的方法等來執行。Then, referring to FIG. 21, the temperature of the process area is lowered to the second temperature LT. The "second temperature" may refer to a temperature lower than the first temperature. Considering that the first temperature is about 25°C to 60°C, the second temperature is assumed to be lower than the first temperature, and may be about 20°C to 30°C. Preferably, the second temperature may be normal temperature. The temperature drop of the process area can be performed by a method of providing a cooling means in the chamber or a cooling means around the process area, a method of natural cooling at room temperature, and the like.
如果工藝區域的溫度下降至第二溫度LT,則掩模100可以預定的長度進行熱收縮。掩模100可沿著所有側面方向以各向同性地進行熱收縮。只是,由於掩模100通過焊接W固定連接在框架200[或者掩模單元片材部220],因此掩模100的熱收縮本身向周圍的掩模單元片材部220施加張力TS。基於掩模100自身施加的張力TS,掩模100可更加繃緊地附著在框架200上。If the temperature of the process area drops to the second temperature LT, the
此外,在每個掩模100全部附著在對應的掩模單元區域CR上之後,工藝區域的溫度將下降至第二溫度LT,由此所有掩模100同時產生熱收縮,因此導致框架200發生變形或者圖案P的對準誤差變大的問題。進一步說明,即使張力TS施加到掩模單元片材部220,由於多個掩模100施加向相反的方向收縮的張力TS,該張力TS相互抵消,因此掩模單元片材部220上不會發生變形。例如,在CR11單元區域上附著的掩模100與CR12單元區域上附著的掩模100之間的第一柵格片材部223中,附著在CR11單元區域上的掩模100向右側方向作用的張力TS與附著在CR12單元區域上的掩模100向左側方向作用的張力TS可相互抵消。由此,通過最小化框架200[或者掩模單元片材部220]因張力TS發生的變形,從而具有可最小化掩模100[或者,掩模圖案P]的對準誤差的優點。In addition, after each
圖22是示出本發明的一實施例涉及的利用框架一體型掩模100、200的OLED像素沉積裝置1000的示意圖。FIG. 22 is a schematic diagram showing an OLED
參照圖22,OLED像素沉積裝置1000包括:磁板300,其容納有磁體310,並且排布有冷卻水管350;沉積源供給部500,其從磁板300的下部供給有機物原料600。22, the OLED
磁板300與沉積源沉積部500之間可以插入有用於沉積有機物源600的玻璃等目標基板900。目標基板900上可以以緊貼或非常接近的方式配置有使有機物源600按不同像素沉積的框架一體型掩模100、200(或者FMM)。磁體310可以產生磁場,並通過磁場緊貼到目標基板900上。A
沉積源供給部500可以往返左右路徑並供給有機物源600,由沉積源供給部500供給的有機物源600可以通過形成於框架一體型掩模100、200的圖案P附著至目標基板900的一側。通過框架一體型掩模100、200的圖案P後沉積的有機物源600,可以用作OLED的像素700。The deposition
為了防止由於陰影效應(Shadow Effect)發生的像素700的不均勻沉積,框架一體型掩模100、200的圖案可以傾斜地形成S(或者以錐形S形成)。沿著傾斜表面,在對角線方向上通過圖案的有機物源600,也可以有助於像素700的形成,因此,能夠整體上厚度均勻地沉積像素700。In order to prevent uneven deposition of the
在高於像素沉積工藝溫度的第一溫度下,掩模100附著固定於框架200上,因此即使提升至用於沉積像素工藝的溫度,也對掩模圖案P的位置幾乎不構成影響,掩模100和與其相鄰的掩模100之間的PPA能夠保持為不超過3μm。At a first temperature higher than the temperature of the pixel deposition process, the
圖23是示出將掩模從框架一體型掩模分離時的問題的示意圖。FIG. 23 is a schematic diagram showing a problem when the mask is separated from the frame-integrated mask.
另外,當發生如附著在框架200的掩模100中夾雜有雜質或者掩模圖案P發生損傷等缺陷時,有必要替換掩模100。或者,當掩模100附著到框架200上但掩模圖案P的一部分對準不準確時,也有必要通過替換掩模100使對準準確。In addition, when defects such as impurities are included in the
參照圖23,現有方式是通過向焊接在框架200上的掩模100施加物理的力量並將掩模100從框架200分離的方式。例如,當附著在單元區域CR11上的掩模100發生缺陷時,需要取下該掩模100,但是將掩模100從框架200分離時,由於除單元區域CR11以外的剩餘的單元區域CR12、CR13、CR21、…上附著的掩模100的張力TS,框架200可發生細微的變形。這種變形可導致掩模圖案P及掩模單元C沿著PL線依次發生對準誤差(參照圖23的放大部分)。即,隨著將任意一個掩模100[單元區域CR111的掩模100]從框架200分離,多個掩模100向相互相反方向的施加張力TS而相互抵消的力將重新作用於框架200,從而發生對準誤差。Referring to FIG. 23, the existing method is a method in which physical force is applied to the
因此,本發明的特徵在於,重新調整至使這種張力TS不作用於框架200的狀態之後,再將發生缺陷而需要分離/替換的目標掩模100進行分離/替換。Therefore, the present invention is characterized in that after readjusting to the state where such tension TS does not act on the
圖24至圖26是示出本發明一實施例涉及的將掩模100從框架一體型掩模分離並替換的過程的示意圖。作為一例,假設以將包括掩模單元C11的目標掩模100從框架200分離/替換為例進行說明。此外,假設以掩模100為左側棱角及右側棱角被焊接並附著在框架200[掩模單元片材部220]上的狀態為例進行說明,但是也同樣適用於四個邊全部焊接的掩模100。24 to 26 are schematic diagrams showing a process of separating and replacing the
參照圖24,首先可將工藝區域的溫度上升至第一溫度ET。第一溫度可指,將框架一體型掩模用於OLED像素沉積工藝時,等於或者高於像素沉積工藝溫度的溫度。考慮到像素沉積工藝溫度可約為25~45℃,第一溫度可約為25℃至60℃。這與圖16中上升至第一溫度ET的情況相同。Referring to FIG. 24, first, the temperature of the process area can be increased to the first temperature ET. The first temperature may refer to a temperature equal to or higher than the temperature of the pixel deposition process when the frame-integrated mask is used in the OLED pixel deposition process. Considering that the pixel deposition process temperature may be about 25 to 45°C, the first temperature may be about 25 to 60°C. This is the same as the case of rising to the first temperature ET in FIG. 16.
如果工藝區域的溫度上升至第一溫度ET,則熱收縮的掩模100同時產生預定的熱膨脹。熱膨脹的程度相當於解除張力TS的程度。換而言之,如果工藝區域的溫度上升至第一溫度ET,則附著在框架200上的掩模100上施加的張力TS將被解除。由此,掩模100及框架200可變為無應力(stree free)的狀態。If the temperature of the process area rises to the first temperature ET, the thermally contracted
然後,參照圖25,可將目標掩模100從框架200分離。可通過向目標掩模100施加物理力來將掩模從框架200分離。只是,為了防止作用於框架200的力導致發生變形,當揭下一個邊時有必要對剩餘的邊進行擠壓。Then, referring to FIG. 25, the
將包括掩模單元C11的掩模100的一側棱角(右側棱角)從框架200揭下之後,可將另一側棱角(左側棱角)從框架200揭下。具體來說,掩模100的一側棱角可以是附著在作為掩模單元區域CR111的右側棱角的第一柵格片材部223上的狀態。因此,通過向掩模100的一側棱角施加外力將其揭下時,存在由於掩模100與框架200[第一柵格片材部223]的附著力導致第一柵格片材部223的部分發生變形的問題。因此,有必要將框架200[第一柵格片材部223]緊緊地固定之後揭下掩模100。After peeling off one side corner (right corner) of the
為了抵抗外力而牢牢地固定框架200,可對外力直接作用的掩模100的一側棱角(右側棱角)的外側部分進行擠壓。即,可對位於附著的掩模100一側棱角的外側的框架200[第一柵格片材部223]部分進行擠壓。擠壓優選對相較於一側棱角更靠近外側的框架200[第一柵格片材部223]部分的上部面和下部面的兩面進行。上部面可使用加壓條(未圖示)進行擠壓,下部面可使用用於支撐框架200的下部支撐體70[參照圖16]進行擠壓。將另一側棱角(左側棱角)從框架200揭下時,也可同樣對另一側棱角(左側棱角)的外側部分進行擠壓。In order to firmly fix the
然後,參照圖26,可將待替換的新掩模100對應至掩模單元區域CR111。可通過將模板50裝載到框架200[或者掩模單元片材部220]上實現將掩模100對應至掩模單元區域CR111。接下來,向掩模100照射雷射L並基於雷射焊接將掩模100附著在框架200上。這與圖16的過程相同。Then, referring to FIG. 26, the
然後,可將工藝區域的溫度下降至第二溫度LT。考慮到第一溫度約為25℃至60℃,第二溫度以低於第一溫度為前提,可約為20℃至30℃,優選地,第二溫度可為常溫。這與圖21中下降至第二溫度LT的情況相同。Then, the temperature of the process zone can be lowered to the second temperature LT. Considering that the first temperature is about 25°C to 60°C, and the second temperature is lower than the first temperature, it may be about 20°C to 30°C. Preferably, the second temperature may be normal temperature. This is the same as the case where the temperature drops to the second temperature LT in FIG. 21.
如果工藝區域的溫度下降至第二溫度LT,則掩模100可以以預定長度進行熱收縮。掩模100可沿著側面方向進行熱收縮。與此同時,由於多個掩模100以相互相反的方向施加張力TS,導致該力相互抵消,因此,掩模單元片材部220上不發生變形。If the temperature of the process area drops to the second temperature LT, the
如上所述,當分離/替換發生缺陷的掩模100時,由於通過將工藝區域的溫度上升至第一溫度使分離/替換在無應力的狀態下進行,因此可防止框架200的變形,而且不產生掩模圖案P、掩模單元C的對準誤差,具有穩定地分離/替換掩模100的優點。As described above, when the
如上所述,本發明列舉了優選實施例進行圖示和說明,但是不限於上述實施例,在不脫離本發明的精神的範圍內,本領域技術人員能夠進行各種變形和變更。這種變形及變更均落在本發明和所附的申請專利範圍的範圍內。As described above, the present invention exemplifies preferred embodiments for illustration and description, but is not limited to the above-mentioned embodiments, and those skilled in the art can make various modifications and changes within the scope not departing from the spirit of the present invention. Such deformations and changes fall within the scope of the present invention and the attached patent application.
6:OLED像素 10、10':掩模 11:掩模膜 13:圖案 20:框架 26:空白空間 50...模板(template) 50a:中心部 50b:邊緣部 51:雷射貫穿孔 55:臨時黏合部 56:芯膜 57a:第一黏合層 57b:第二黏合層 58a、58b:剝離膜/離型膜 70:下部支撐體 90:真空吸盤 100:掩模 101:掩模的一面 102:掩模的另一面 110、110':掩模膜、掩模金屬膜 200:框架 210:邊緣框架部 220:掩模單元片材部 221:邊緣片材部 223:第一柵格片材部 225:第二柵格片材部 300:磁板 310:磁體 500:沉積源供給部 600:有機物源 700:像素 900:目標基板 1000:OLED像素沉積裝置 C:C(C1~C6、C11~C56):單元、掩模單元 CM:化學處理 CR(CR11~CR56):掩模單元區域 D1~D1"、D2~D2":距離 DM:虛設部,掩模虛設部 ET:將工藝區域的溫度上升至第一溫度 EP:加熱 F1~F2:拉伸力 L:雷射 LT:將工藝區域的溫度下降至第二溫度 P:掩模圖案 PD':像素間隔 PS:平坦化 R:邊緣框架部的中空區域 Ra:表面粗糙度 T1、T2:厚度 US:超聲波 UV:紫外線 W:焊接 WB:焊珠 WP:焊接部6: OLED pixels 10, 10': mask 11: Mask film 13: pattern 20: Frame 26: Blank space 50...template 50a: Center 50b: Edge 51: Laser through hole 55: Temporary bonding part 56: core membrane 57a: The first adhesive layer 57b: second adhesive layer 58a, 58b: release film/release film 70: Lower support 90: vacuum suction cup 100: mask 101: One side of the mask 102: The other side of the mask 110, 110': mask film, mask metal film 200: frame 210: edge frame 220: Mask unit sheet section 221: Edge sheet section 223: The first grid sheet part 225: The second grid sheet part 300: magnetic plate 310: Magnet 500: Deposition Source Supply Department 600: Organic Source 700: pixels 900: target substrate 1000: OLED pixel deposition device C: C (C1~C6, C11~C56): unit, mask unit CM: Chemical treatment CR (CR11~CR56): Mask unit area D1~D1", D2~D2": distance DM: dummy part, mask dummy part ET: Raise the temperature of the process area to the first temperature EP: heating F1~F2: Stretching force L: Laser LT: Decrease the temperature of the process area to the second temperature P: Mask pattern PD': pixel interval PS: Flattening R: The hollow area of the edge frame Ra: surface roughness T1, T2: thickness US: Ultrasound UV: Ultraviolet W: welding WB: Solder bead WP: Welding Department
圖1是示出現有的OLED像素沉積用掩模的示意圖。 圖2是示出現有的將掩模附著至框架的過程的示意圖。 圖3是示出在現有的拉伸掩模的過程中發生單元之間的對準誤差的示意圖。 圖4是示出本發明的一實施例涉及的框架一體型掩模的主視圖以及側剖視圖。 圖5是示出本發明的一實施例涉及的框架的主視圖以及側剖視圖。 圖6是示出本發明的一實施例涉及的框架製造過程的示意圖。 圖7是示出本發明的另一實施例涉及的框架的製造過程的示意圖。 圖8是示出現有的用於形成高解析度OLED的掩模的示意圖。 圖9是示出本發明的一實施例涉及的掩模的示意圖。 圖10是示出本發明一實施例涉及的以壓延(rolling)方式製造掩模金屬膜的過程的示意圖。 圖11是示出本發明另一實施例涉及的以電鑄(electroforming)方式製造掩模金屬膜的過程的示意圖。 圖12至圖13是示出本發明一實施例涉及的通過在模板上黏合掩模金屬膜並形成掩模來製造掩模支撐模板的過程的示意圖。 圖14是示出本發明一實施例涉及的臨時黏合部的放大截面示意圖。 圖15是示出本發明一實施例涉及的將掩模支撐模板裝載到框架上的過程的示意圖。 圖16是示出本發明一實施例涉及的將工藝區域的溫度上升之後將模板裝載到框架上並將掩模對應至框架的單元區域的狀態的示意圖。 圖17是示出本發明一實施例涉及的將掩模附著到框架之後將掩模與模板分離的過程的示意圖。 圖18是示出本發明一實施例涉及的將掩模對應至相鄰的框架的單元區域的狀態的示意圖。 圖19是示出本發明一實施例涉及的將掩模附著至相鄰的框架的單元區域之後將掩模與模板分離的過程的示意圖。 圖20是示出本發明一實施例涉及的將掩模附著到框架的狀態的示意圖。 圖21是示出本發明一實施例涉及的將掩模附著至框架的單元區域之後使工藝區域的溫度下降的過程的示意圖。 圖22是示出本發明一實施例涉及的利用框架一體型掩模的OLED像素沉積裝置的示意圖。 圖23是示出將掩模從框架一體型掩模分離時的問題的示意圖。 圖24至圖26是示出本發明一實施例涉及的將掩模從框架一體型掩模分離並替換的過程的示意圖。FIG. 1 is a schematic diagram showing a conventional mask for OLED pixel deposition. Fig. 2 is a schematic diagram showing a conventional process of attaching a mask to a frame. FIG. 3 is a schematic diagram showing that an alignment error between units occurs in the process of stretching a mask in the prior art. 4 is a front view and a side cross-sectional view showing a frame-integrated mask according to an embodiment of the present invention. Fig. 5 is a front view and a side sectional view showing a frame according to an embodiment of the present invention. Fig. 6 is a schematic diagram showing a frame manufacturing process related to an embodiment of the present invention. Fig. 7 is a schematic diagram showing a manufacturing process of a frame according to another embodiment of the present invention. FIG. 8 is a schematic diagram showing a conventional mask used to form a high-resolution OLED. Fig. 9 is a schematic diagram showing a mask according to an embodiment of the present invention. FIG. 10 is a schematic diagram showing a process of manufacturing a mask metal film by rolling according to an embodiment of the present invention. FIG. 11 is a schematic diagram showing a process of manufacturing a mask metal film by electroforming according to another embodiment of the present invention. FIGS. 12 to 13 are schematic diagrams illustrating a process of manufacturing a mask support template by bonding a mask metal film on the template and forming a mask according to an embodiment of the present invention. Fig. 14 is an enlarged schematic cross-sectional view showing a temporary bonding portion according to an embodiment of the present invention. FIG. 15 is a schematic diagram showing a process of loading a mask support template on a frame according to an embodiment of the present invention. 16 is a schematic diagram showing a state in which the template is loaded on the frame after the temperature of the process area is increased and the mask is mapped to the unit area of the frame according to an embodiment of the present invention. FIG. 17 is a schematic diagram showing a process of separating the mask from the template after attaching the mask to the frame according to an embodiment of the present invention. FIG. 18 is a schematic diagram showing a state in which a mask is associated with a unit area of an adjacent frame according to an embodiment of the present invention. 19 is a schematic diagram showing a process of separating the mask from the template after attaching the mask to the unit area of the adjacent frame according to an embodiment of the present invention. FIG. 20 is a schematic diagram showing a state in which a mask is attached to a frame according to an embodiment of the present invention. FIG. 21 is a schematic diagram showing a process of lowering the temperature of a process area after attaching a mask to a cell area of a frame according to an embodiment of the present invention. FIG. 22 is a schematic diagram showing an OLED pixel deposition apparatus using a frame-integrated mask according to an embodiment of the present invention. FIG. 23 is a schematic diagram showing a problem when the mask is separated from the frame-integrated mask. 24 to 26 are schematic diagrams showing a process of separating and replacing the mask from the frame-integrated mask according to an embodiment of the present invention.
50:模板(template) 50: template
51:雷射貫穿孔 51: Laser through hole
70:下部支撐體 70: Lower support
90:真空吸盤 90: vacuum suction cup
100:掩模 100: mask
200:框架 200: frame
210:邊緣框架部 210: edge frame
221:邊緣片材部 221: Edge sheet section
223:第一柵格片材部 223: The first grid sheet part
225:第二柵格片材部 225: The second grid sheet part
C(C11、C12、C13):單元、掩模單元 C (C11, C12, C13): unit, mask unit
CM:化學處理 CM: Chemical treatment
CR(CR13、CR21、CR22、CR23):掩模單元區域 CR (CR13, CR21, CR22, CR23): mask unit area
ET:將工藝區域的溫度上升至第一溫度 ET: Raise the temperature of the process area to the first temperature
EP:加熱 EP: heating
US:超聲波 US: Ultrasound
UV:紫外線 UV: Ultraviolet
W:焊接 W: welding
WB:焊珠 WB: Solder bead
Claims (14)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180148602A KR102202529B1 (en) | 2018-11-27 | 2018-11-27 | Producing method of mask integrated frame and mask changing method of mask integrated frame |
| KR10-2018-0148602 | 2018-11-27 |
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| Publication Number | Publication Date |
|---|---|
| TW202021174A TW202021174A (en) | 2020-06-01 |
| TWI730512B true TWI730512B (en) | 2021-06-11 |
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| TW108142959A TWI730512B (en) | 2018-11-27 | 2019-11-26 | Producing method of mask integrated frame and mask changing method of mask integrated frame |
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| KR (1) | KR102202529B1 (en) |
| CN (1) | CN111218644B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102501250B1 (en) * | 2020-09-04 | 2023-02-21 | 주식회사 오럼머티리얼 | Mask for forming oled picture element and template for supporting mask and producing method of mask integrated frame |
| CN112226731B (en) * | 2020-09-30 | 2023-05-26 | 昆山国显光电有限公司 | Mask plate frame and evaporation mask plate assembly |
| KR102435236B1 (en) * | 2020-10-07 | 2022-08-24 | 주식회사 효산 | Producing method of mask and mask |
| TWI832113B (en) * | 2020-11-24 | 2024-02-11 | 南韓商奧魯姆材料股份有限公司 | Mask for forming oled picture element and mask integrated frame |
| CN112859510B (en) * | 2021-01-28 | 2024-05-24 | 江苏高光半导体材料有限公司 | A mask plate and a method for manufacturing the same |
| KR102618776B1 (en) * | 2021-02-25 | 2023-12-29 | 주식회사 오럼머티리얼 | Producing method of mask integrated frame |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006152396A (en) * | 2004-11-30 | 2006-06-15 | Sony Corp | Manufacturing method of metal mask, electroforming mask master and master master |
| TW200927962A (en) * | 2007-08-24 | 2009-07-01 | Dainippon Printing Co Ltd | Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask, method for manufacturing vapor deposition mask device and method for manufacturing sheet-shaped member for vapor deposition mask |
| US20120234236A1 (en) * | 2011-03-15 | 2012-09-20 | Samsung Mobile Display Co., Ltd. | Deposition Mask and Method of Manufacturing the Same |
| TW201409605A (en) * | 2012-07-09 | 2014-03-01 | Samsung Display Co Ltd | Clamp |
| TW201443253A (en) * | 2013-05-08 | 2014-11-16 | Samsung Display Co Ltd | Mask assembly |
| JP2015127446A (en) * | 2013-12-27 | 2015-07-09 | 大日本印刷株式会社 | Production method of vapor deposition mask and vapor deposition mask device with protective film |
| JP2015127441A (en) * | 2013-12-27 | 2015-07-09 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06322331A (en) * | 1993-05-10 | 1994-11-22 | Sanyo Chem Ind Ltd | Adhesive for temporal tacking of interlining and method for temporal tacking/peeling of interlining |
| KR100687488B1 (en) * | 2004-11-19 | 2007-03-02 | 알투스주식회사 | Stretching mask frame for organic el and practical method thereof |
| JP5382259B1 (en) * | 2013-01-10 | 2014-01-08 | 大日本印刷株式会社 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
| KR102162790B1 (en) * | 2013-05-02 | 2020-10-08 | 삼성디스플레이 주식회사 | Welding device for mask frame assembly |
| JP5455099B1 (en) * | 2013-09-13 | 2014-03-26 | 大日本印刷株式会社 | Metal plate, metal plate manufacturing method, and mask manufacturing method using metal plate |
| CN104498871B (en) * | 2015-01-14 | 2017-04-12 | 京东方科技集团股份有限公司 | Mask device and assembling method thereof |
| TWI665319B (en) * | 2015-07-17 | 2019-07-11 | 日商凸版印刷股份有限公司 | Metal mask substrate for vapor deposition, metal mask for vapor deposition, method of producing metal mask substrate for vapor deposition, and method of producing metal mask for vapor deposition |
-
2018
- 2018-11-27 KR KR1020180148602A patent/KR102202529B1/en active Active
-
2019
- 2019-11-26 CN CN201911173364.9A patent/CN111218644B/en not_active Expired - Fee Related
- 2019-11-26 TW TW108142959A patent/TWI730512B/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006152396A (en) * | 2004-11-30 | 2006-06-15 | Sony Corp | Manufacturing method of metal mask, electroforming mask master and master master |
| TW200927962A (en) * | 2007-08-24 | 2009-07-01 | Dainippon Printing Co Ltd | Vapor deposition mask, vapor deposition mask device, method for manufacturing vapor deposition mask, method for manufacturing vapor deposition mask device and method for manufacturing sheet-shaped member for vapor deposition mask |
| US20120234236A1 (en) * | 2011-03-15 | 2012-09-20 | Samsung Mobile Display Co., Ltd. | Deposition Mask and Method of Manufacturing the Same |
| TW201409605A (en) * | 2012-07-09 | 2014-03-01 | Samsung Display Co Ltd | Clamp |
| TW201443253A (en) * | 2013-05-08 | 2014-11-16 | Samsung Display Co Ltd | Mask assembly |
| JP2015127446A (en) * | 2013-12-27 | 2015-07-09 | 大日本印刷株式会社 | Production method of vapor deposition mask and vapor deposition mask device with protective film |
| JP2015127441A (en) * | 2013-12-27 | 2015-07-09 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device |
Also Published As
| Publication number | Publication date |
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| KR102202529B1 (en) | 2021-01-13 |
| KR20200062780A (en) | 2020-06-04 |
| CN111218644A (en) | 2020-06-02 |
| TW202021174A (en) | 2020-06-01 |
| CN111218644B (en) | 2022-05-17 |
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