TWI811223B - Resin composition, resin sheet, circuit board, and semiconductor chip package - Google Patents

Abstract

An object of the present invention is to provide a resin composition that can suppress aggregation of carbon black while achieving a balance among characteristics such as color development, minimum melt viscosity, and glass transition temperature.

The resin composition of the present invention contains: (A) epoxy resin, (B) inorganic filler, (C) carbon black with a DBP absorption capacity of 130cm ³ /100g or less, and (D) glass transition temperature of 30°C or less polymer resin.

Description

Resin compositions, resin sheets, circuit substrates, and semiconductor chip packages

The present invention relates to a resin composition. Furthermore, the present invention relates to a resin sheet, a circuit board, and a semiconductor chip package obtained using the resin composition.

In recent years, electronic equipment has been miniaturized and improved in performance. Along with this, semiconductor package substrates are required to have multi-layered build-up layers and to have miniaturized and high-density wiring. In addition, with the popularity of smart phones and tablet devices, the demand for thinner devices has become stronger. Therefore, there is a demand for thinning the core material or adopting a thin package substrate with a coreless structure. In order to realize such a thin package substrate, the insulating layer system is required to have high insulation properties even though it is thin.

On the other hand, the insulating layer is sometimes required to contain carbon black for coloring. For example, Patent Document 1 discloses a resin composition containing carbon black as a smear inhibitory component. Furthermore, Patent Document 2 discloses a resin composition containing a polymer resin having a glass transition temperature of 30° C. or less.

[Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2014-005464

[Patent Document 2] Japanese Patent Application Publication No. 2014-095047

In order to increase the glass transition temperature of the insulating layer and improve the heat resistance, the inventors have tried to blend inorganic fillers into the resin composition. In addition, in order to adjust the melt viscosity of the resin composition to an appropriate value and improve the lamination properties of the resin sheets, the inventors have tried to blend a polymer resin with a glass transition temperature of 30° C. or lower into the resin composition. Then, the present inventors conducted research in order to improve the balance of physical properties in a resin composition composed of a combination of these inorganic fillers and a polymer resin.

During this study, the present inventors discovered that when such a resin composition is used for coloring with carbon black, aggregation of carbon black may occur. According to the research of the present inventors, it is believed that the above-mentioned aggregation of carbon black is caused by the difference in compatibility between carbon black, inorganic filler and polymer resin.

If agglomeration of carbon black occurs, the color development of the insulating layer will be affected by the aggregation, and the desired color tone may not be obtained. In addition, when the aggregation of carbon black produces agglomerates of carbon black defects of a size that can be visually distinguished, the commercial value may be underestimated even if there is no problem with the quality of the resin composition.

The present invention was proposed in view of the above-mentioned problems, and an object of the present invention is to provide a resin composition that can suppress the aggregation of carbon black while achieving a balance among characteristics such as color development, minimum melt viscosity, and glass transition temperature. object; a resin sheet having a resin composition layer, the resin composition layer comprising the aforementioned resin composition; a circuit substrate comprising an insulating layer, the insulating layer being a hardened product of the aforementioned resin composition What is formed; and, a semiconductor chip package including a cured product of the aforementioned resin composition.

The present inventors conducted in-depth research in order to solve the aforementioned problems. As a result, it was found that a combination of (A) epoxy resin, (B) inorganic filler, (C) carbon black with a DBP absorption amount below a specified value, and (D) polymer resin with a glass transition temperature of 30°C or below The resin composition can solve the above-mentioned problems, and thus the present invention has been completed.

That is, the present invention is as follows.

[1]. A resin composition containing: (A) epoxy resin, (B) inorganic filler, (C) carbon black with a DBP absorption capacity of 130cm ³ /100g or less, and (D) a glass transition temperature of 30 Polymer resin below ℃.

[2]. The resin composition according to [1], wherein the amount of component (B) is 30 mass% or more and 95 mass% or less based on 100 mass% of non-volatile components in the resin composition.

[3]. The resin composition according to [1] or [2], wherein relative to the resin The non-volatile components in the composition are 100% by mass, and the amount of component (B) is 75% by mass or more and 95% by mass or less.

[4]. The resin composition according to any one of [1] to [3], wherein the component (A) contains (A-1) a nitrogen-containing epoxy resin or an epoxy resin having a condensed ring structure.

[5]. The resin composition according to any one of [1] to [4], wherein the component (D) has a polybutadiene structure, a polysiloxane structure, and a polyalkylene group in the molecule. One or more structures selected from the group consisting of structure, polyalkyleneoxy structure, polyisoprene structure, polyisobutylene structure, polycarbonate structure and polyacrylic acid structure.

[6]. The resin composition according to any one of [1] to [5], wherein the component (D) has a functional group that can react with the component (A).

[7]. The resin composition according to any one of [1] to [6], wherein the component (D) has a hydroxyl group, an anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group and a urethane group. One or more functional groups selected from the group consisting of ester groups.

[8]. The resin composition according to any one of [1] to [7], wherein the number average molecular weight of component (D) is 4,000 or more and 100,000 or less.

[9]. The resin composition according to any one of [1] to [8], wherein the amount of component (D) is 0.2 mass% or more relative to 100 mass% of non-volatile components in the resin composition 20 mass% or less.

[10]. The resin composition according to any one of [1] to [9], wherein the amount of component (C) is 0.1 mass % or more based on 100 mass % of non-volatile components in the resin composition 3 mass% or less.

[11]. The resin composition according to any one of [1] to [10], which is a resin composition for the insulating layer of a semiconductor chip package.

[12]. The resin composition according to any one of [1] to [11], which is a resin composition for semiconductor sealing.

[13]. A resin sheet having a support body and a resin composition layer provided on the support body, the resin composition layer including the resin composition described in any one of [1] to [12].

[14]. The resin sheet according to [13], which is a resin sheet for an insulating layer of a semiconductor chip package.

[15]. A circuit board including an insulating layer formed from a cured product of the resin composition according to any one of [1] to [12].

[16]. A semiconductor chip package including: the circuit substrate described in [15] and a semiconductor chip mounted on the circuit substrate.

[17]. A semiconductor chip package including a semiconductor wafer and a cured product of the resin composition according to any one of [1] to [12] for sealing the semiconductor wafer.

According to the present invention, it is possible to provide a product that can achieve a balance among characteristics such as color development, minimum melt viscosity, glass transition temperature, etc. A resin composition that inhibits the aggregation of carbon black; a resin sheet having a resin composition layer, the resin composition layer including the aforementioned resin composition; a circuit substrate including an insulating layer, the insulating layer is formed by The cured product of the aforementioned resin composition is formed; and a semiconductor chip package includes the cured product of the aforementioned resin composition.

100:Semiconductor chip package

110:Semiconductor wafer

120:Sealing layer

130:Rewiring formation layer

140:Rewiring layer

150: Solder resist layer

160: Bump

[Fig. 1] Fig. 1 is a cross-sectional view schematically showing a Fan-out type WLP as an example of a semiconductor chip package according to the second embodiment of the present invention.

[The best way to implement the invention]

The following shows embodiments and examples, and explains the present invention in detail. However, the present invention is not limited to the embodiments and examples listed below, and can be arbitrarily modified and implemented without departing from the patentable scope of the present invention and its equivalent range.

[1. Overview of resin composition]

The resin composition of the present invention contains: (A) epoxy resin, (B) inorganic filler, (C) carbon black with DBP absorption below a specified value, and (D) polymer with a glass transition temperature below 30°C. resin. In the following description, "carbon black whose DBP absorption amount is less than or equal to a specified value" as the component (C) may be referred to as "(C) carbon black". In addition, in the following description, (D) may be referred to as The "polymer resin with a glass transition temperature of 30°C or less" is called "(D) polymer resin".

By combining and including the aforementioned (A) epoxy resin, (B) inorganic filler, (C) carbon black and (D) polymer resin, the resin composition can obtain the so-called "in-color, lowest melt viscosity and glass" The desired effect of the present invention is that the aggregation of carbon black can be suppressed while balancing characteristics such as transition temperature. The cured product of such a resin composition can be suitably used as an insulating layer and sealing material of a semiconductor chip package by utilizing its excellent characteristics.

Moreover, the said resin composition may further contain arbitrary components and may be combined with (A) epoxy resin, (B) inorganic filler, (C) carbon black, and (D) polymer resin. Examples of optional components include (E) curing agent, (F) curing accelerator, (G) thermoplastic resin, (H) flame retardant, and the like.

[2.(A) Epoxy resin]

The resin composition of the present invention contains an epoxy resin as component (A). (A) Epoxy resins usually have an epoxy group in the molecule. (A) The number of epoxy groups per molecule of the epoxy resin is usually 1 or more, preferably 2 or more. From the viewpoint of significantly obtaining the desired effects of the present invention, the ratio of the epoxy resin having two or more epoxy groups per molecule relative to 100% by mass of the non-volatile component of the epoxy resin (A) The content is preferably 50 mass% or more, more preferably 60 mass% or more, and particularly preferably 70 mass% or more.

Examples of (A) epoxy resin include bixylenol (bixylenol) type epoxy resin; bisphenol AF type epoxy resin, and perfluoroalkyl type epoxy resin and other fluorine-containing epoxy resins; bisphenol A type epoxy resin; bisphenol F type epoxy resin; Bisphenol S type epoxy resin; Bisphenol AF type epoxy resin; Dicyclopentadiene type epoxy resin; Trihydric phenol type epoxy resin; Naphthol novolak type epoxy resin; Phenol novolak type epoxy resin; tert-butyl-catechol epoxy resin; naphthalene epoxy resin; naphthol epoxy resin; anthracene epoxy resin; glycidyl amine epoxy resin; glycidyl ester epoxy resin; cresol Novolak type epoxy resin; biphenyl type epoxy resin; linear aliphatic epoxy resin; epoxy resin with butadiene structure; alicyclic epoxy resin; heterocyclic epoxy resin; containing spiro ring Epoxy resin; cyclohexane-type epoxy resin; cyclohexanedimethanol-type epoxy resin; naphthylene ether-type epoxy resin; trimethylol-type epoxy resin; tetraphenylethane-type epoxy resin Oxygen resin; epoxy resin containing phosphorus, etc. (A) The epoxy resin system can be used individually by 1 type, or can be used in combination of 2 or more types.

(A) The epoxy resin preferably contains (A-1) a nitrogen-containing epoxy resin or an epoxy resin having a condensed ring structure. As the component system (A-1), an epoxy resin containing only nitrogen, an epoxy resin having only a condensed ring structure, or a combination of an epoxy resin containing nitrogen and an epoxy resin having a condensed ring structure may be used. to use. When (A) the epoxy resin contains the component (A-1), the desired effects of the present invention can be significantly exhibited, and in particular, the glass transition temperature of the cured product of the resin composition can be effectively increased. The effect of raising the glass transition temperature in this way is remarkable when the component (A-1) and the polymer resin (D) are combined. Furthermore, the component (A-1) can generally improve the shear strength and breaking bending stress of the cured product of the resin composition. The change and rupture properties become good.

Nitrogen-containing epoxy resins are epoxy resins that contain nitrogen atoms in their molecules. Preferable nitrogen-containing epoxy resins include, for example, glycidyl amine type epoxy resin and amine phenol type epoxy resin.

Specific examples of nitrogen-containing epoxy resins include "630" and "630LSD" (glycidyl amine type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "EP-3950S" and "EP-3950L" manufactured by ADEKA Corporation ", "EP-3980S" (glycidyl amine type epoxy resin); "GAN" and "GOT" (glycidyl amine type epoxy resin) manufactured by Nippon Kayaku Corporation; "ELM-100" manufactured by Sumitomo Chemical Corporation ( Glycidylamine type epoxy resin), etc. These can be used individually by 1 type, or can be used in combination of 2 or more types.

The epoxy resin having a condensed ring structure is an epoxy resin having a condensed ring structure in the molecule. Preferable epoxy resins having a condensed ring structure include, for example, naphthalene-type epoxy resins, naphthalene-type tetrafunctional epoxy resins, naphthol-type epoxy resins, naphthyl ether-type epoxy resins, and anthracene-type epoxy resins. Oxygen resin, dicyclopentadiene-type epoxy resin. Among them, naphthalene-type epoxy resin, naphthalene-type tetrafunctional epoxy resin, naphthol-type epoxy resin, naphthylether-type epoxy resin, and dicyclopentadiene-type epoxy resin are more preferred, and naphthalene-type epoxy resin is preferred. Epoxy resin and naphthol type epoxy resin are more preferred.

Specific examples of the epoxy resin having a condensed ring structure include "HP4032" and "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC; "HP-4700" and "HP-4710" manufactured by DIC (Naphthalene type tetrafunctional epoxy resin); "HP-7200H", "HP-7200", "HP-7200L" (dicyclopentadiene type epoxy resin) manufactured by DIC Corporation; DIC Corporation "EXA7311", "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", "HP6000" (naphthyl ether type epoxy resin) manufactured by our company; "NC7000L" (naphthol phenolic resin) manufactured by DIC Varnish type epoxy resin); "ESN475V" (naphthol type epoxy resin) manufactured by Nippon Steel and Sumitomo Metal Chemical Co., Ltd.; "ESN485" (naphthol novolac type epoxy resin) manufactured by Nippon Steel and Sumitomo Metal Chemical Co., Ltd.; New "YX8800" (anthracene type epoxy resin) manufactured by Nippon Steel and Sumitomo Metal Chemical Co., Ltd.; "PG-100" and "CG-500" (anthracene type epoxy resin) manufactured by OSAKA Gas Chemical Co., Ltd.; "YL7800" manufactured by Mitsubishi Chemical Corporation "(Anthracene type epoxy resin); "YX8800" (Anthracene type epoxy resin) manufactured by Mitsubishi Chemical Corporation, etc. These can be used individually by 1 type, or can be used in combination of 2 or more types.

When using a combination of a nitrogen-containing epoxy resin and an epoxy resin having a condensed ring structure as the component (A-1), it is preferred that the amount ratio of these be within a specified range. Specifically, the mass ratio of "nitrogen-containing epoxy resin: epoxy resin having a condensed ring structure" is preferably 1:0.1~1:10, more preferably 1:0.3~1:5, and more preferably 1:0.6~1:2.5. By setting the quantitative ratio of the nitrogen-containing epoxy resin to the epoxy resin having a condensed ring structure in such a range, the heat resistance of the cured product of the resin composition can be effectively improved.

The amount of component (A-1) in the resin composition is preferably 0.5 mass% or more, more preferably 0.8 mass% or more, and particularly preferably 1.0 mass%, based on 100 mass% of the non-volatile components of the resin composition. The above content is preferably 10 mass% or less, more preferably 8 mass% or less, and particularly preferably 5 mass% or less. By keeping the amount of component (A-1) within the aforementioned range, it is possible to significantly obtain achieve the desired effects of the present invention. Furthermore, it is generally possible to improve the shear strength, breaking bending strain, and crack resistance of the cured product of the resin composition.

(A) The epoxy resin is preferably an epoxy resin that further contains (A-2) in addition to the component (A-1) and is liquid at 25°C, and is combined with the component (A-1). The component (A-2) does not include a nitrogen-containing epoxy resin that is liquid at 25°C and an epoxy resin that has a condensed ring structure that is liquid at 25°C. By using the component (A-2) in combination with the component (A-1), the desired effects of the present invention can be significantly obtained.

The epoxy resin that is liquid at 25°C as the component (A-2) is preferably one that has two or more epoxy groups in one molecule. Furthermore, as the epoxy resin that is liquid at 25° C. as the component (A-2), an aromatic epoxy resin having an aromatic ring in the molecule is preferably used. Here, the term "aromatic ring" includes not only a monocyclic aromatic ring but also a polycyclic aromatic ring and an aromatic heterocyclic ring.

Examples of the component (A-2) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, glycidyl ester type epoxy resin, and phenol novolak type epoxy resin. , alicyclic epoxy resin with an ester skeleton, cyclohexane-type epoxy resin, cyclohexanedimethanol-type epoxy resin, aliphatic epoxy resin, and epoxy resin with a butadiene structure. Among them, bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, and bisphenol AF-type epoxy resin are preferred from the viewpoint that the desired effects of the present invention can be significantly obtained. Type A epoxy resin and bisphenol F type epoxy resin are better.

Specific examples of the component (A-2) include Mitsubishi Chemical "828US" and "jER828EL" (bisphenol A-type epoxy resin) manufactured by the company; "JER806" and "jER807" (bisphenol F-type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER152" manufactured by Mitsubishi Chemical Corporation (Phenol novolak type epoxy resin); "ZX1059" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd. (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin); "EX-721" manufactured by Nagase Chemtex Corporation "(glycidyl ester type epoxy resin); "CELOXIDE 2021P" made by DAICEL Co., Ltd. (alicyclic epoxy resin with ester skeleton); "ZX1658" and "ZX1658GS" made by Nippon Steel Chemical Co., Ltd. (liquid 1 , 4-glycidylcyclohexane); "YX7400" manufactured by Mitsubishi Chemical Corporation (epoxy resin with a soft aliphatic skeleton). These can be used individually by 1 type, or can be used in combination of 2 or more types.

When the epoxy resin (A) contains a combination of the component (A-1) and the component (A-2), it is preferable that the quantitative ratio is within a specified range. Specifically, the mass ratio of "(A-1) component: (A-2) component" is preferably 1:0.1~1:10, more preferably 1:0.1~1:8, and more preferably 1 :0.1~1:6. By setting the mass ratio of the component (A-1) to the component (A-2) in such a range, the desired effects of the present invention can be significantly obtained. In addition, it is generally possible to improve the shear strength, breaking bending strain, and crackability of the cured product of the resin composition.

When (A) the epoxy resin contains the component (A-2), the amount of the component (A-2) is preferably 0.5 mass% or more relative to 100 mass% of the non-volatile components of the resin composition, and is preferably Preferably it is 1 mass % or more, more preferably 2 mass % or more, more preferably 10 mass % or less, further preferably 8 mass % or less, more preferably 6 mass % or less. Since the amount of component (A-2) is within the aforementioned range, Therefore, the desired effects of the present invention can be significantly obtained. Furthermore, the crack resistance of the cured product of the resin composition can generally be improved.

The (A) epoxy resin system may contain any epoxy resin (A-3) other than the (A-1) component and (A-2) component, and may be combined with the (A-1) component and (A-2) ) ingredient combination. As such component (A-3), an epoxy resin that is solid at 20° C. is preferred. The epoxy resin which is solid at 20° C. preferably has three or more epoxy groups per molecule. Furthermore, the component (A-3) is preferably an aromatic epoxy resin having an aromatic ring in the molecule.

Preferred components (A-3) include, for example, a cresol novolak type epoxy resin, a trihydric phenol type epoxy resin, a biphenyl type epoxy resin, a bisphenol A type epoxy resin, and bisphenol AF. Type epoxy resin, tetraphenylene ethane type epoxy resin. Among them, biphenyl-type epoxy resin is preferred from the viewpoint that the desired effects of the present invention can be significantly obtained.

Specific examples of the component (A-3) include "N-690" (cresol novolak type epoxy resin) and "N-695" (cresol novolak type epoxy resin) manufactured by DIC Corporation; "EPPN-502H" (trihydric phenol type epoxy resin), "YX4000HK" (bixylenol type epoxy resin), "YL7760" (bisphenol AF type epoxy resin), "NC3000L" manufactured by Nippon Kayaku Co., Ltd. "(Biphenyl-type epoxy resin); "jER1010" (solid bisphenol A-type epoxy resin), "jER1031S" (tetraphenyl ethane-type epoxy resin), "157S70" (bisphenol-A type epoxy resin) manufactured by Mitsubishi Chemical Corporation Novolak type epoxy resin), "jER1031S" (tetraphenyl ethane type epoxy resin), etc. These can be used individually by 1 type, or can be used in combination of 2 or more types.

When (A) the epoxy resin contains the component (A-3), the amount of the component (A-3) is preferably 0.5 mass% or more relative to 100 mass% of the non-volatile components in the resin composition, and It is preferably 1% by mass or more, more preferably 2% by mass or more, preferably 10% by mass or less, further preferably 8% by mass or less, and more preferably 6% by mass or less. When the amount of the component (A-3) is within the aforementioned range, the desired effects of the present invention can be significantly obtained. Furthermore, the mechanical strength and insulation reliability of the cured product of the resin composition can generally be improved.

The amount of the entire epoxy resin (A) containing the above-mentioned components (A-1) to (A-3) is preferably 0.5 mass% or more relative to 100 mass% of the non-volatile components of the resin composition, and is preferably at least 0.5 mass%. Preferably it is 1 mass % or more, particularly preferably 3 mass % or more, more preferably 30 mass % or less, more preferably 20 mass % or less, and more preferably 15 mass % or less. When the amount of (A) epoxy resin is within the aforementioned range, the desired effects of the present invention can be significantly obtained.

(A) The epoxy equivalent of the epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, more preferably 80 to 2000, still more preferably 110 to 1000. By setting it within this range, the crosslinking density of the cured product of the resin composition becomes sufficient, and when the cured product is used as an insulating layer, an insulating layer with a smaller surface roughness can be obtained. Incidentally, the epoxy equivalent of component (A) can be measured according to JIS K7236, and is the mass of resin containing 1 equivalent of epoxy groups.

(A) The weight average molecular weight of the epoxy resin is preferably 100 to 5,000, more preferably 250 to 3,000, and more preferably 400 to 1,500. Here, the weight average molecular weight of the liquid epoxy resin was determined by gel permeation chromatography. The weight average molecular weight in terms of polystyrene measured by the (GPC) method.

(A) The number average molecular weight of the epoxy resin is preferably less than 4,000, more preferably 3,500 or less, more preferably 3,000 or less. The lower limit is preferably 500 or more, more preferably 1,000 or more, and more preferably 1,500 or more. The number average molecular weight (Mn) is a number average molecular weight in terms of polystyrene measured using gel permeation chromatography.

[3.(B) Inorganic filler]

The resin composition of the present invention contains an inorganic filler as component (B). By using (B) the inorganic filler, the heat resistance of the resin composition can be improved. Furthermore, by using (B) the inorganic filler, the thermal expansion coefficient of the cured product of the resin composition can generally be reduced, thereby suppressing warpage. Furthermore, (B) the inorganic filler can generally improve the insulation performance and sealing performance of the cured product of the resin composition.

As the material of the inorganic filler, inorganic materials are usually used, and inorganic compounds are preferably used. Examples of materials for the inorganic filler (B) include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, water Aluminum ore, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, Bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate, etc. Among them, silica is particularly suitable from the viewpoint that the desired effects of the present invention can be significantly obtained. as silicon dioxide Spherical silica is preferred. Moreover, (B) the inorganic filler system can be used individually by 1 type, or can be used in combination of 2 or more types.

Generally speaking, (B) the inorganic filler is contained in the resin composition in the form of particles. (B) The average particle size of the inorganic filler is preferably 0.01 μm or more, more preferably 0.05 μm or more, more preferably 0.1 μm or more, and preferably 5 μm or less, further preferably 2.5 μm or less, and more Preferably, it is 2.2 μm or less, and particularly preferably, it is 2 μm or less. When the average particle size of the inorganic filler (B) is in the above range, the desired effects of the present invention can be significantly obtained, and an insulating layer with a low surface roughness can generally be obtained.

(B) The average particle size of the inorganic filler can be measured by the laser diffraction and scattering method based on the Mie scattering theory. Specifically, the particle size distribution of (B) the inorganic filler can be prepared based on the volume basis using a laser diffraction and scattering particle size distribution measuring device, and the average particle size can be measured from the particle size distribution to serve as the average particle size. diameter. As a measurement sample, it is preferable to use one in which the (B) inorganic filler is dispersed in a solvent such as water by ultrasonic waves. As a laser diffraction scattering particle size distribution measuring device, "LA-500" manufactured by Horiba Manufacturing Co., Ltd., etc. can be used.

Examples of the above-mentioned (B) inorganic filler include "YC100C", "YA050C", "YA050C-MJE", and "YA010C" manufactured by Admatechs; "UFP-30" manufactured by Denki Chemical Industry Co., Ltd.; and Tokuyama "Shirufiru NSS-3N", "Shirufiru NSS-4N", "Shirufiru NSS-5N" manufactured by Admatechs; "SC2500SQ", "SO-C6", "SO-C4", "SO-C2", "SO- C1" and so on.

(B) The inorganic filler is preferably surface-treated with an appropriate surface treatment agent. By surface treatment, the moisture resistance and dispersibility of (B) the inorganic filler can be improved. Examples of the surface treatment agent include fluorine-containing silane coupling agents, aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, alkoxysilane compounds, and organic silicon nitrogen. Alkane compounds, titanate coupling agents, etc.

Examples of commercially available surface treatment agents include "KBM22" (dimethyldimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. and "KBM403" (3-glycidoxypropyltrimethylsilane) manufactured by Shin-Etsu Chemical Industries, Ltd. Oxysilane), "KBM803" (3-mercaptopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBE903" (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd., Shin-Etsu Chemical Industries "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by the company, "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM103" manufactured by Shin-Etsu Chemical Industries, Ltd. "(phenyltrimethoxysilane), "KBM-4803" manufactured by Shin-Etsu Chemical Industry Co., Ltd. (long-chain epoxy silane coupling agent), etc. In addition, one type of surface treatment agent may be used alone, or two or more types may be used in combination.

The amount of (B) inorganic filler in the resin composition is preferably 30 mass% or more, more preferably 50 mass% or more, and more preferably 75 mass% based on 100 mass% of the non-volatile components in the resin composition. % or more, preferably 95 mass% or less, more preferably 93 mass% or less, more preferably 90 mass% or less. When the amount of (B) the inorganic filler is within the aforementioned range, the desired effects of the present invention can be significantly obtained. In addition, usually the amount of the inorganic filler (B) is not less than the lower limit of the aforementioned range, so that the resin composition can be reduced. When the thermal expansion coefficient of the cured product of the finished product is within the above-mentioned range and is below the upper limit, the mechanical strength, especially the elongation, of the resin composition can be improved.

[4.(C) Carbon black]

The resin composition of the present invention contains carbon black having a DBP absorption amount below a specified value as component (C). (C) The specific DBP absorption amount of carbon black is usually 130 cm ³ /100g or less, preferably 100 cm ³ /100g or less, particularly preferably 80 cm ³ /100g or less. When (C) carbon black has such a small DBP absorption capacity, it can be suppressed when combined with (A) epoxy resin, (B) inorganic filler, and (D) polymer resin. agglutination. In addition, the characteristics of the resin composition containing (C) carbon black and its cured product (the minimum melt viscosity of the resin composition, the color development and glass transition temperature of the cured product of the resin composition, etc.) are compared to The properties of the resin composition obtained by combining other carbon blacks with (A) epoxy resin, (B) inorganic filler, and (D) polymer resin are excellent to the same extent or more. Therefore, by using (C) carbon black, it is possible to realize a resin composition that can suppress the aggregation of carbon black while balancing characteristics such as color development, minimum melt viscosity, and glass transition temperature. In view of the fact that in a resin composition containing (B) an inorganic filler and (D) a polymer resin, carbon black generally tends to agglomerate easily, the above-mentioned effects are obvious to those with ordinary knowledge in the technical field. Words are the result of surprise. (C) The lower limit of the DBP absorption amount of carbon black is not particularly limited, but may be, for example, 10 cm ³ /100g or more, 20 cm ³ /100g or more, or 40 cm ³ /100g or more.

(C) The DBP absorption capacity of carbon black is based on JIS K 6217- 4:2017 to determine the method specified. The DBP absorption amount is a physical property value that is affected by factors such as the type and amount of functional groups present on the surface of the carbon black and the specific surface area of the carbon black. The DBP absorption amount is related to (B) the inorganic filler. There is a correlation with the dispersibility of (C) carbon black mixed with (D) polymer resin, which was previously unknown.

(C) The average particle size of carbon black is preferably 5 nm or more, more preferably 10 nm or more, particularly preferably 15 nm or more, preferably 300 nm or less, further preferably 100 nm or less, and particularly preferably 50 nm or less. Generally speaking, carbon blacks with smaller average particle diameters tend to aggregate easily, but the resin composition of the present invention can generally suppress aggregation even with smaller (C) carbon blacks. Therefore, from the viewpoint of effectively utilizing the effects of the present invention, it is preferable to use one with a smaller average particle diameter as described above as (C) carbon black. Furthermore, by using (C) carbon black with a small average particle diameter as described above, the color of the cured product of the resin composition can be easily adjusted.

The average particle diameter of (C) carbon black mentioned above does not mean the average particle diameter of the secondary particles aggregated by a plurality of (C) carbon blacks, but represents the average particle diameter of the primary particles of individual (C) carbon blacks. The average particle diameter of the (C) carbon black can be obtained by observing the (C) carbon black using an electronic microscope and determining its arithmetic mean diameter.

(C) The pH system of carbon black is preferably 1.0 or more, more preferably 2.0 or more, particularly preferably 3.0 or more, preferably 7.0 or less, further preferably 6.0 or less, and particularly preferably 4.0 or less. By using (C) carbon black with a pH in such a range, the desired effects of the present invention can be significantly obtained, in particular, the aggregation of (C) carbon black can be significantly suppressed.

(C) The pH system of carbon black can be measured according to the method specified in JIS K 5101-17-2:2004.

(C) For the carbon black system, commercially available carbon black may be used as it is, or a plurality of commercially available products may be appropriately mixed so that physical property values such as DBP absorption are concentrated within a specified range. Commercially available strains of carbon black are available from, for example, Mitsubishi Chemical Corporation, Tokai Carbon Corporation, Asahicar Bon Corporation, NSCC Carbon Corporation, Nippon Pigment Corporation, Toyo-color Corporation, Mikuni Color Corporation.

The amount of (C) carbon black in the resin composition is preferably 0.1 mass% or more, more preferably 0.15 mass% or more, and particularly preferably 0.2 mass%, based on 100 mass% of the non-volatile components in the resin composition. The above content is preferably 3% by mass or less, more preferably 2.5% by mass or less, and particularly preferably 2% by mass or less. When the amount of (C) carbon black is within the aforementioned range, the desired effects of the present invention can be significantly obtained. In particular, when the amount of (C) carbon black is not less than the lower limit of the above range, the cured product of the resin composition can be appropriately colored, and when the amount of (C) carbon black is not more than the upper limit of the above range. , thus the aggregation of (C) carbon black can be particularly effectively suppressed.

[5.(D)Polymer resin]

The resin composition of the present invention contains a polymer resin with a glass transition temperature of 30° C. or less as component (D). By using component (D), the minimum melt viscosity of the resin composition can be lowered. Therefore, the laminability of the resin sheet provided with the resin composition layer can generally be improved. Specifically, the glass transition temperature of the polymer resin (D) is usually 30°C or lower, preferably 20°C. ℃ or less, more preferably 10 ℃ or less. The lower limit of the glass transition temperature is not particularly limited, but it can be -30°C or higher, for example. In addition, by using the (D) polymer resin, the elastic modulus of the cured product of the resin composition can generally be reduced, thereby improving the peel strength of the sealing layer and the insulating layer formed using the cured product. In addition, the (D) polymer resin system generally has a linear thermal expansion coefficient that does not easily change in a wide temperature range of 25°C to 220°C, and therefore can improve the dimensional stability of the cured product of the resin composition.

(D) The glass transition temperature of the polymer resin can be measured according to any of the following measurement methods.

That is, the glass transition temperature of (D) the polymer resin can be measured by thermomechanical analysis using the tensile load method. The measurement system can be performed using a test piece of approximately 5 mm in width and 15 mm in length, which is made of (D) polymer resin. In addition, the measurement conditions are usually a load of 1g and a temperature rise rate of 5°C/min. The measurement is performed twice continuously, and the glass transition temperature can be calculated in the second measurement.

Furthermore, when the glass transition temperature Tg of the cured product of the resin composition is measured by thermomechanical analysis using the tensile load method, in the results of the thermomechanical analysis of the cured product, in addition to the glass transition temperature of the cured product In addition to Tg, the glass transition temperature of (D) polymer resin can also be displayed. Therefore, by measuring the glass transition temperature Tg of the hardened material through thermomechanical analysis using the tensile load method, the glass transition temperature of the polymer resin (D) can be determined.

Furthermore, (D) the glass transition temperature of the polymer resin can be measured using a DSC (differential scanning calorimeter). Can be used as DSC series "EXSTARDSC6200" manufactured by Seiko Instruments. When measuring using DSC, the inflection point temperature is measured by raising the temperature from -60°C under the measurement conditions of 10 mg of sample and 10°C/min in a nitrogen environment, and can be determined from the inflection point temperature. Calculate the glass transition temperature (Tg).

(D) The polymer resin has a polybutadiene structure, a polysiloxane structure, a polyalkylene structure, a polyalkyleneoxy structure, a polyisoprene structure, and a polyisobutylene structure in its molecule. Compounds with one or more structures selected from the group consisting of , polycarbonate structure, and polyacrylic acid structure are preferred. By using the (D) polymer resin having such a structure, the desired effects of the present invention can be remarkably obtained. In addition, the (D) polymer resin system having such a structure usually has excellent flexibility and can effectively reduce the minimum melt viscosity of the resin composition. Furthermore, although carbon black generally tends to aggregate easily, when combined with (D) polymer resin having such a structure, the above-mentioned (C) carbon black does not agglomerate easily. Therefore, from the viewpoint of effectively suppressing the aggregation of (C) carbon black, it is preferable that the (D) polymer resin is a compound having the above-mentioned structure in its molecule. Among them, from the viewpoint of exerting the above effects more effectively, polybutadiene structure, polysiloxane structure, polyisoprene structure, polyisobutylene structure, polycarbonate structure and polyacrylic acid structure are preferred. , polybutadiene structure, polyisoprene structure, and polycarbonate structure are more preferred, and polybutadiene structure and polycarbonate structure are particularly preferred.

The polybutadiene structure includes not only the structure formed by polymerizing butadiene, but also the structure formed by hydrogenating the structure. make. In addition, only a part of the butadiene structure may be hydrogenated, or all of it may be hydrogenated. Furthermore, the polybutadiene structure is included in the molecule of the polymer resin (D) and may be included in the main chain or the side chain. A resin having a polybutadiene structure in its molecule is sometimes referred to as "butadiene resin" below. As the butadiene resin, a butadiene resin that is liquid at 25°C or has a glass transition temperature of 25°C or lower is preferred.

The polysiloxane structure is a structure containing siloxane bonds, and is included in, for example, polysiloxane rubber. The polysiloxane structure is contained in the molecule of the polymer resin (D) and may be included in the main chain or the side chain. A resin having a polysiloxane structure in its molecule is sometimes referred to as "siloxane resin" below.

The polyalkylene structure preferably has the specified number of carbon atoms. The specific carbon number system of the polyalkylene structure is preferably 2 or more, more preferably 3 or more, particularly preferably 5 or more, preferably 15 or less, further preferably 10 or less, and particularly preferably 6 or less. Moreover, the polyalkylene structure is contained in the molecule of (D) polymer resin, and may be contained in a main chain or a side chain. A resin having a polyalkylene structure in its molecule may be referred to as "alkylene resin" below.

The polyalkyleneoxy structure preferably has the specified number of carbon atoms. The specific number of carbon atoms in the polyalkyleneoxy structure is preferably 2 or more, preferably 3 or more, further preferably 5 or more, preferably 15 or less, further preferably 10 or less, and particularly preferably 6 or less. . The polyalkyleneoxy structure is contained in the molecule of the polymer resin (D) and may be included in the main chain or in the side chain. Resins having a polyalkyleneoxy structure in the molecule are sometimes referred to as "Alkyleneoxy resin".

The polyisoprene structure is contained in the molecule of the polymer resin (D) and may be included in the main chain or in the side chain. A resin having a polyisoprene structure in its molecule is sometimes referred to as "isoprene resin" below.

The polyisobutylene structure is contained in the molecule of the polymer resin (D) and may be included in the main chain or the side chain. A resin having a polyisobutylene structure in its molecule is sometimes referred to as "isobutylene resin" below.

The polycarbonate structure is contained in the molecule of (D) polymer resin, and may be included in the main chain or the side chain. A resin having a polycarbonate structure in its molecule is sometimes referred to as "carbonate resin" below. As the carbonate resin, a carbonate resin having a glass transition temperature of 25° C. or less is preferred.

The polyacrylic acid structure is a structure in which a compound containing at least one of an acrylic group and a methacrylic group (acrylate, methacrylate, etc.) is formed by polymerizing the aforementioned acrylic group or methacrylic group. Construct. Polyacrylic acid is structured in the molecule of (D) polymer resin, and may be included in the main chain or in the side chain. Hereinafter, resins having a polyacrylic acid structure in the molecule are referred to as "acrylic resins". As the acrylic resin, an acrylic resin having a glass transition temperature of 25°C or lower is preferred.

It is preferred that the polymer resin (D) has a functional group capable of reacting with the epoxy resin (A). This functional group also includes those that appear by heating Reactive group. Since (D) the polymer resin has the above-mentioned functional group, the mechanical strength of the cured product of the resin composition can be improved.

Examples of the functional group include a hydroxyl group, a carboxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group, a urethane group, and the like. Among them, from the viewpoint of significantly obtaining the effects of the present invention, the functional group is a group consisting of a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group and a urethane group. One or more selected functional groups are preferred, and phenolic hydroxyl groups are particularly preferred.

(D) The polymer resin preferably has an imide structure. By having an imide structure, the heat resistance of (D) polymer resin can be effectively improved.

Preferable examples of the polymer resin (D) include butadiene resin. Preferable examples of the butadiene resin include a hydrogenated polybutadiene skeleton-containing resin, a hydroxyl group-containing butadiene resin, a phenolic hydroxyl group-containing butadiene resin, a carboxyl group-containing butadiene resin, Anhydride group-containing butadiene resin, epoxy group-containing butadiene resin, isocyanate group-containing butadiene resin, and urethane group-containing butadiene resin. Among them, a butadiene resin containing a phenolic hydroxyl group is more preferred. Here, the so-called "resin containing a hydrogenated polybutadiene skeleton" refers to a resin in which at least a part of the polybutadiene skeleton is hydrogenated, and does not necessarily mean a resin in which the polybutadiene skeleton is completely hydrogenated. Examples of the resin containing a hydrogenated polybutadiene skeleton include an epoxy resin containing a hydrogenated polybutadiene skeleton. Examples of the butadiene resin containing a phenolic hydroxyl group include a resin having a polybutadiene structure and a phenolic hydroxyl group.

Specific examples of the butadiene resin include "Ricon 657" (epoxy group-containing polybutadiene), "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20" and "Ricon" manufactured by Cray Valle Co., Ltd. 131MA5", "Ricon 131MA10", "Ricon 131MA17", "Ricon 131MA20", "Ricon 184MA6" (polybutadiene containing acid anhydride groups), "JP-100" and "JP-200" manufactured by Nippon Soda Co., Ltd. ( Epoxidized polybutadiene), "GQ-1000" (polybutadiene with hydroxyl and carboxyl groups introduced), "G-1000", "G-2000", "G-3000" (polybutadiene with both terminal hydroxyl groups) ), "GI-1000", "GI-2000", "GI-3000" (hydrogenated polybutadiene with both terminal hydroxyl groups), "PB3600" and "PB4700" (polybutadiene skeleton epoxy compound) manufactured by DAICEL ), "EPOFRIEND A1005", "EPOFRIEND A1010", "EPOFRIEND A1020" (epoxy compound of styrene-butadiene-styrene block copolymer), "FCA-061L" (hydrogenated polybutylene) manufactured by Nagasechemtex Corporation (olefin skeleton epoxy compound), "R-45EPT" (polybutadiene skeleton epoxy compound), etc.

Preferable examples of butadiene resins include linear polyimides using hydroxyl-terminated polybutadiene, a diisocyanate compound, and a tetrabasic acid anhydride as raw materials (Japanese Patent Application Laid-Open No. 2006-37083 , polyimide described in International Publication No. 2008/153208). The content rate of the polybutadiene structure of the polyimide resin is preferably 60 mass% to 95 mass%, and more preferably 75 mass% to 85 mass%. For details on the polyimide resin, please refer to Japanese Patent Application Laid-Open No. 2006-37083 and International Publication No. 2008/153208, the contents of which are incorporated into this specification.

Another preferred example of the polymer resin (D) is a siloxane resin. Specific examples of the siloxane resin include "SMP-2006", "SMP-2003PGMEA", "SMP-5005PGMEA" manufactured by Shin-Etsu Silicone Co., Ltd., amino-terminated polysiloxane, and tetrabasic acid anhydride. The raw material is linear polyimide (International Publication No. 2010/053185), etc.

Preferred examples of the polymer resin (D) include alkylene resins and alkyleneoxy resins. Specific examples of alkylene resins and alkyleneoxy resins include "PTXG-1000" and "PTXG-1800" manufactured by Asahi Kasei Fibers Co., Ltd., and "YX-7180" (including ether bonds) manufactured by Mitsubishi Chemical Corporation. Alkylene structure resin), "EXA-4850-150", "EXA-4816", "EXA-4822" manufactured by DIC Corporation, "EP-4000", "EP-4003" manufactured by ADEKA Corporation, "EP-4010", "EP-4011", "BEO-60E" and "BPO-20E" manufactured by New Nippon Rika Corporation, "YL7175" and "YL7410" manufactured by Mitsubishi Chemical Corporation, etc.

Another preferred example of the polymer resin (D) is isoprene resin. Specific examples of isoprene resins include "KL-610" and "KL-613" manufactured by Kuraray Corporation.

Another preferred example of the polymer resin (D) is isobutylene resin. Specific examples of the isobutylene resin include "SIBSTAR-073T" (styrene-isobutylene-styrene triblock copolymer) and "SIBSTAR-042D" (styrene-isobutylene diblock copolymer) manufactured by Kaneka Corporation. wait.

Another preferred example of the polymer resin (D) is a carbonate resin. Preferable examples of the carbonate resin include a hydroxyl group-containing carbonate resin, a phenolic hydroxyl group-containing carbonate resin, a carboxyl group-containing carbonate resin, an acid anhydride group-containing carbonate resin, and an epoxy group-containing carbonate resin. Ester resin, isocyanate group-containing carbonate resin, urethane group-containing carbonate resin, etc.

Specific examples of the carbonate resin include "T6002" and "T6001" (polycarbonate diol) manufactured by Asahi Kasei Chemical Co., Ltd., and "C-1090", "C-2090" and "C-" manufactured by Kuraray Corporation. 3090" (polycarbonate diol), etc.

Preferable examples of carbonate resins include linear polyimides using hydroxyl-terminated polycarbonate, diisocyanate compounds, and tetrabasic acid anhydrides as raw materials. The content rate of the polycarbonate structure of the polyimide resin is preferably 60 mass% to 95 mass%, and more preferably 75 mass% to 85 mass%. For details of the polyimide resin, please refer to International Publication No. 2016/129541, the content of which is incorporated into this specification.

Another preferred example of the polymer resin (D) is an acrylic resin. Preferable examples of the acrylic resin include hydroxyl group-containing acrylic resin, phenolic hydroxyl group-containing acrylic resin, carboxyl group-containing acrylic resin, acid anhydride group-containing acrylic resin, epoxy group-containing acrylic resin, isocyanate group-containing acrylic resin Acrylic resin, acrylic resin containing urethane group, etc.

Specific examples of acrylic resin include TEISAN RESIN "SG-70L" manufactured by Nagasechemtex Co., Ltd. "SG-708-6", "WS-023", "SG-700AS", "SG-280TEA" (carboxyl group-containing acrylate copolymer resin, acid value 5~34 mgKOH/g, weight average molecular weight 400,000~90 million, Tg-30℃~5℃), "SG-80H", "SG-80H-3", "SG-P3" (epoxy group-containing acrylate copolymer resin, epoxy equivalent 4761~14285g/eq , weight average molecular weight 350,000~850,000, Tg11℃~12℃), "SG-600TEA", "SG-790" (hydroxyl-containing acrylate copolymer resin, hydroxyl value 20~40 mgKOH/g, weight average molecular weight 50 0,000 to 1.2 million, Tg-37℃~-32℃), "ME-2000", "W-116.3" (acrylate copolymer resin containing carboxyl group), "W-197C" (containing hydroxyl group) manufactured by Negami Industrial Co., Ltd. acrylate copolymer resin), "KG-25", "KG-3000" (epoxy group-containing acrylate copolymer resin), etc.

Other preferred examples of the polymer resin (D) include acrylic rubber particles, polyamide fine particles, polysiloxane particles, and the like. Specific examples of acrylic rubber particles include resins that exhibit rubber elasticity, such as acrylonitrile butadiene rubber, butadiene rubber, and acrylic rubber, which are chemically cross-linked and are insoluble and infusible in organic solvents. Resin microparticles. Specific examples of acrylic rubber particles include: Made by Kureha Chemical Industry Co., Ltd.), etc. As the polyamide fine particle system, those having a soft skeleton such as aliphatic polyamide, polyamide imine, etc. such as nylon can be used. Specific examples of polyamide fine particles include VESTOSINT 2070 (made by DAICELHUELS); SP500 (made by Toray), etc.

(D) Polymer resin system can be used individually by 1 type, or can be used in combination of 2 or more types.

(D) From the viewpoint of exhibiting excellent flexibility, the polymer resin preferably has a high molecular weight. (D) The specific number average molecular weight Mn of the polymer resin is preferably 4,000 or more, more preferably 4,500 or more, more preferably 5,000 or more, particularly preferably 5,500 or more, preferably 100,000 or less, still more preferably 95,000. Below, the best value is below 90,000. When the number average molecular weight Mn of the (D) polymer resin is within the aforementioned range, the desired effects of the present invention can be significantly obtained. (D) The number average molecular weight Mn of the polymer resin is a polystyrene-converted number average molecular weight measured using GPC (gel permeation chromatography).

When (D) the polymer resin has a functional group, the functional group equivalent of the (D) polymer resin is preferably 100 or more, more preferably 200 or more, more preferably 1,000 or more, and particularly preferably 2,500 or more. The price is preferably 50,000 or less, more preferably 30,000 or less, more preferably 10,000 or less, and particularly preferably 5,000 or less. Functional group equivalents are grams of resin containing 1 gram equivalent of functional groups. For example, the epoxy group equivalent system can be measured based on JIS K7236. In addition, for example, the hydroxyl equivalent can be calculated by dividing the hydroxyl value measured in accordance with JIS K1557-1 by the molecular weight of KOH.

The amount of (D) polymer resin in the resin composition is preferably 0.2 mass% or more, more preferably 0.3 mass% or more, and particularly preferably 0.4 mass%, based on 100 mass% of the non-volatile components of the resin composition. above, compared to It is preferably 20 mass% or less, more preferably 15 mass% or less, and particularly preferably 10 mass% or less. When the amount of the polymer resin (D) is within the aforementioned range, the desired effects of the present invention can be significantly obtained. In particular, when the amount of the polymer resin (D) is not less than the lower limit of the aforementioned range, the minimum melt viscosity of the resin composition can be effectively reduced, and by being equal to or less than the upper limit of the aforementioned range, it is possible to increase the minimum melt viscosity of the resin composition. The glass transition temperature of the cured product of the resin composition improves the heat resistance.

[6.(E) Hardener]

In addition to the above-mentioned components, the resin composition may contain (E) a hardener as an optional component. (E) The hardener system usually reacts with (A) epoxy resin to harden the resin composition. (E) The hardener system can be used individually by 1 type, or can be used in combination of 2 or more types.

Examples of the curing agent of the component (E) include active ester curing agents, phenol curing agents, naphthol curing agents, benzoxazine curing agents, cyanate ester curing agents, and carbodiimides. Hardener, etc. Among them, from the viewpoint of significantly obtaining the desired effects of the present invention, (E) the curing agent is a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent, and a cyanate ester-based curing agent. Preferably, phenol-based hardeners and active ester-based hardeners are more preferred.

As the active ester hardener, a compound having one or more active ester groups per molecule can be used. Among them, active ester hardeners include phenol esters, thiophenol esters, N-hydroxylamine esters, esters of heterocyclic hydroxyl compounds, etc., which have two or more reactive properties per molecule. Compounds with ester groups are preferred. The active ester hardener is preferably obtained by the condensation reaction of a carboxylic acid compound and/or a thiocarboxylic acid compound and a hydroxy compound and/or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester hardener obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester hardener obtained from a carboxylic acid compound, a phenol compound and/or a naphthol compound is preferred. Hardener is also preferred.

Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromethic acid, and the like.

Examples of the phenol compound or naphthol compound include hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, reduced phenolphthalein, methylated bisphenol A, methylated bisphenol F, and toluene. Sylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-di Hydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, phloroglucinol, dicyclopentadiene-type diphenol compound, phenol novolac wait. Here, the "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol into one molecule of dicyclopentadiene.

Preferred specific examples of the active ester-based hardener include an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, and an active ester compound containing an acetate of phenol novolac. , an active ester compound containing a benzyl compound of phenol novolac. Among these, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure are further preferred. The so-called "double "Cyclopentadiene-type diphenol structure" represents a divalent structure composed of phenylene-dicyclopentylene-phenylene group.

Examples of commercially available active ester hardeners include "EXB9451", "EXB9460", "EXB9460S", "HPC-8000-65T", which are active ester compounds containing a dicyclopentadiene-type diphenol structure. "HPC-8000H-65TM", "EXB-8000L-65TM" (manufactured by DIC Corporation); "EXB9416-70BK" (manufactured by DIC Corporation) as an active ester compound containing a naphthalene structure; as an acetate compound containing phenol novolac "DC808" (manufactured by Mitsubishi Chemical Corporation) as an active ester compound; "YLH1026" (manufactured by Mitsubishi Chemical Corporation) as an active ester compound containing the benzyl compound of phenol novolac; and "YLH1026" (manufactured by Mitsubishi Chemical Corporation) as an acetyl compound of phenol novolac Ester-based hardener "DC808" (manufactured by Mitsubishi Chemical Corporation); "YLH1026" (manufactured by Mitsubishi Chemical Corporation) and "YLH1030" (manufactured by Mitsubishi Chemical Corporation), active ester-based hardeners that are benzyl compounds of phenol novolaks , "YLH1048" (manufactured by Mitsubishi Chemical Corporation), etc.

As the phenol-based hardener and the naphthol-based hardener, those having a novolak structure are preferred from the viewpoint of heat resistance and water resistance. Furthermore, from the viewpoint of adhesion to the conductor layer, a nitrogen-containing phenol-based hardening agent is preferred, and a phenol-based hardening agent containing a triazine skeleton is further preferred.

Specific examples of phenol-based hardeners and naphthol-based hardeners include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Meiwa Kasei Co., Ltd.; and "NHN" manufactured by Nippon Kayaku Co., Ltd. , "CBN", "GPH"; "SN170", "SN180", "SN190", "SN475", "SN485" made by Nippon Steel & Sumitomo Metal Corporation, "SN495V", "SN375", "SN395"; "TD-2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB" made by DIC Corporation -9500", "HPC-9500", "KA-1160", "KA-1163", "KA-1165"; "GDP-6115L", "GDP-6115H" made by Kunyeong Chemical Co., Ltd., etc.

Specific examples of the benzoxazine-based hardener include "HFB2006M" manufactured by Showa Polymer Co., Ltd. and "P-d" and "F-a" manufactured by Shikoku Chemical Industry Co., Ltd.

Examples of the cyanate-based hardener include bisphenol A dicyanate, polyhydric phenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), and 4,4' -Methylene bis(2,6-dimethylphenyl cyanate), 4,4'-ethylene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2- Bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1, 3-Bis(4-cyanatophenyl-1-(methylethylene))benzene, bis(4-cyanatephenyl)sulfide, and bis(4-cyanatephenyl)ether, etc. Bifunctional cyanate ester resin; multifunctional cyanate ester resin derived from phenol novolac and cresol novolac; prepolymers in which these cyanate ester resins are partially triazinized, etc. Specific examples of cyanate-based hardeners include "PT30" and "PT60" manufactured by LONZA Japan (both are phenol novolac type polyfunctional cyanate ester resins), "BA230", and "BA230S75" (bisphenol A part or all of the dicyanate is triazinated into a three-dimensional body and becomes a prepolymer), etc.

Specific examples of carbodiimide-based hardeners include "V-03" and "V-07" manufactured by Nisshinbo Chemical Co., Ltd.

When the resin composition contains (E) a hardener, the amount of the (E) hardener is preferably 0.5 mass% or more, and more preferably 1.0 mass%, based on 100 mass% of the non-volatile components in the resin composition. Above, particularly preferably it is 2.0 mass% or more, more preferably 20 mass% or less, more preferably 15 mass% or less, and particularly preferably 10 mass% or less. When the amount of component (E) is within the aforementioned range, the desired effects of the present invention can be significantly obtained.

When the epoxy group number of (A) the epoxy resin is 1, the reactive group number of the (E) hardener is preferably 0.10 or more, more preferably 0.15 or more, more preferably 0.20 or more, and more preferably 2 or less, preferably 1.5 or less, more preferably 1.0 or less. Here, "the number of epoxy groups of (A) epoxy resin" refers to the total value obtained by dividing the mass of non-volatile components of (A) epoxy resin present in the resin composition by the epoxy equivalent value. In addition, the "number of active groups of (B) hardener" refers to the total value obtained by dividing the mass of non-volatile components of (E) hardener present in the resin composition by the active group equivalent. By setting the epoxy group number of (A) the epoxy resin to 1 and the reactive group number of the (E) hardener being in the aforementioned range, the desired effect of the present invention can be significantly improved, and the general hardening of the resin composition layer can be achieved The heat resistance of the material is further improved.

[7.(F) Hardening accelerator]

In addition to the above-mentioned components, the resin composition may contain (F) a hardening accelerator as an optional component. By using the (F) hardening accelerator, hardening can be accelerated when the resin composition is hardened.

Examples of the hardening accelerator of component (F) include phosphorus Hardening accelerator, amine hardening accelerator, imidazole hardening accelerator, guanidine hardening accelerator, metal hardening accelerator, etc., with phosphorus hardening accelerator, amine hardening accelerator, imidazole hardening accelerator, metal Hardening accelerator is preferred. Among them, amine-based hardening accelerators, imidazole-based hardening accelerators, and metal-based hardening accelerators are preferable from the viewpoint that the effects of the present invention can be significantly exerted, and imidazole-based hardening accelerators are particularly preferable. One type of hardening accelerator may be used alone, or two or more types may be used in combination.

Examples of the phosphorus-based hardening accelerator include triphenylphosphine, phosphonium borate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, ( 4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, etc. Among them, triphenylphosphine and tetrabutylphosphonium decanoate are preferred.

Examples of amine-based hardening accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6, -Shen(dimethylaminomethyl)phenol, 1,8-diazinebicyclo(5,4,0)-undecene, etc. Among them, 4-dimethylaminopyridine and 1,8-diazinebicyclo(5,4,0)-undecene are preferred.

Examples of imidazole-based hardening accelerators include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2- Methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl Ethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazole trimellitic acid Ester, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-deca Monoalkyl imidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')] -Ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2 -Phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro -1H-pyrrole[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, etc. Imidazole compounds and adducts of imidazole compounds and epoxy resins. Among them, 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferred.

As the imidazole hardening accelerator system, commercially available products can be used, and examples thereof include "P200-H50" manufactured by Mitsubishi Chemical Corporation; "1B2PZ" manufactured by Shikoku Chemical Industry Co., Ltd., and the like.

Examples of the guanidine-based hardening accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, Dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7-methyl- 1,5,7-Triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-Dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, etc. Among them, dicyanodiamide and 1,5,7-triazinebicyclo[4.4.0]dec-5-ene are preferred.

Examples of metal-based hardening accelerators include organic metal complexes or organic metal complexes of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Organometallic salts. Specific examples of the organic metal complex include organic cobalt complexes such as cobalt (II) acetylpyruvate and cobalt (III) acetylpyruvate, and copper (II) acetylpyruvate. Organic copper complexes, organic zinc complexes such as zinc acetylpyruvate (II), organic iron complexes such as iron acetylpyruvate (III), nickel acetylpyruvate, etc. Organic nickel complexes, organic manganese complexes such as manganese acetylpyruvate (II), etc. Examples of organic metal salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate, and the like.

When the resin composition contains (F) a hardening accelerator, the amount of the (F) hardening accelerator is based on 100 mass of the non-volatile components of the resin composition from the viewpoint that the desired effect of the present invention can be significantly obtained. %, preferably 0.01 mass% or more, more preferably 0.03 mass% or more, particularly preferably 0.05 mass% or more, preferably 3 mass% or less, further preferably 1.5 mass% or less, particularly preferably 1 mass% the following.

[8.(G) Thermoplastic resin]

In addition to the above-mentioned components, the resin composition may contain (G) thermoplastic resin as an optional component.

Examples of the thermoplastic resin of component (G) include phenoxy resin, polyvinyl acetal resin, polyolefin resin, butadiene resin, siloxane resin, alkylene resin, and alkyleneoxy resin. Isoprene resin, isobutylene resin, carbonate resin, acrylic resin, polyimide resin, polyamideimide resin, polyetherimide resin, polystyrene resin, polyetherstyrene resin, polyphenylene ether resin , polyetheretherketone resin, polyester resin.

Examples of the phenoxy resin include a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a bisphenol acetophenone skeleton, a novolak skeleton, a biphenyl skeleton, a fluorene skeleton, and a dicyclopentadiene skeleton. Phenoxy resin with one or more skeletons selected from the group consisting of norbornene skeleton, naphthalene skeleton, anthracene skeleton, adamantane skeleton, terpene skeleton, and trimethylcyclohexane skeleton. The terminal system of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group.

Specific examples of phenoxy resins include "1256" and "4250" manufactured by Mitsubishi Chemical Corporation (both are phenoxy resins containing a bisphenol A skeleton); "YX8100" manufactured by Mitsubishi Chemical Corporation (bisphenol S skeleton contains phenoxy resin); "YX6954" manufactured by Mitsubishi Chemical Corporation (phenoxy resin containing bisphenol acetophenone skeleton); "FX280" and "FX293" manufactured by Nippon Steel and Sumitomo Metal Chemical Corporation; Mitsubishi Chemical Company-made "YX6954BH30", "YX6954BH30", "YX7553", "YX7553BH30", "YL7769BH30", "YL6794", "YL7213", "YL7290", "YL7891BH30" and "YL7482", etc.

(G) The weight average molecular weight Mw of the thermoplastic resin is preferably 8,000 or more, further preferably 10,000 or more, particularly preferably 20,000 or more, from the viewpoint of significantly obtaining the desired effects of the present invention. The price is below 70,000, preferably below 60,000, and particularly preferably below 50,000. (G) The weight average molecular weight Mw of the thermoplastic resin is a number average molecular weight in terms of polystyrene measured using GPC.

If the resin composition contains (G) thermoplastic resin When , the amount of (G) thermoplastic resin in the resin composition is preferably 0.01% relative to 100% by mass of the non-volatile components in the resin composition from the viewpoint of significantly obtaining the desired effects of the present invention. Mass% or more, preferably 0.1 mass% or more, more preferably 0.3 mass% or more, preferably 20 mass% or less, more preferably 10 mass% or less, still more preferably 5 mass% or less.

[9.(H) Flame retardant]

In addition to the above-mentioned components, the resin composition may contain (H) a flame retardant as an optional component.

Examples of the (H) flame retardant include organic phosphorus-based flame retardants, phosphorus compounds containing organic nitrogen, nitrogen compounds, polysiloxane-based flame retardants, metal hydroxides, and the like. One type of flame retardant agent may be used alone, or two or more types may be used in combination.

Specific examples of the (H) flame retardant include "HCA-HQ" manufactured by Sanko Corporation, "PX-200" manufactured by Daihachi Chemical Industry Co., Ltd., and the like. As a flame retardant, one that is difficult to hydrolyze is preferred. For example, 10-(2,5-dihydroxyphenyl)-10-hydrogen-9-oxa-10-phosphaphenanthrene-10-peroxide is preferred. good.

When the resin composition contains (H) a flame retardant, the amount of the (H) flame retardant is preferably 0.01 mass % or more, and more preferably 0.1 mass %, based on 100 mass % of the non-volatile components in the resin composition. % or more, more preferably 0.3 mass % or more, more preferably 20 mass % or less, still more preferably 10 mass % or less, still more preferably 5 mass % or less.

[10.(I) Optional additives]

In addition to the above-mentioned components, the resin composition may further contain additives as optional components. Examples of such additives include organic metal compounds such as organic copper compounds, organic zinc compounds, and organic cobalt compounds; and resins such as binders, tackifiers, defoaming agents, leveling agents, and adhesion-imparting agents. Additives etc. These additives can be used individually by 1 type, or can be used in combination of 2 or more types.

[11. Manufacturing method of resin composition]

The resin composition can be produced by, for example, stirring the ingredients using a stirring device such as a rotary mixer.

[12. Characteristics of resin composition]

Through the above-mentioned resin composition, the minimum melt viscosity can be reduced. Therefore, the lamination properties of the resin sheet using the resin composition can be improved. When (B) an inorganic filler is used, the insulation performance and sealing performance of the cured resin composition can be improved, but generally speaking, the melt viscosity of the composition containing the (B) inorganic filler will become higher, so there is a problem. Tendency to impair lamination. In this regard, by using (D) polymer resin, the above-mentioned resin composition can reduce melt viscosity while using (B) inorganic filler, thereby achieving good lamination properties. The specific minimum melt viscosity of the resin composition is preferably 30,000 poise or less, more preferably 20,000 poise or less, and more preferably 12,000 poise or less. The lower limit of the minimum melt viscosity of the resin composition is not particularly limited, but may be, for example, 100 poise or more. The minimum melt viscosity of the resin composition can be measured according to the method described in the examples.

By using the above-mentioned resin composition, a hardened product with a high glass transition temperature can be obtained. Therefore, the cured product of the resin composition can be made to have good heat resistance, so that an insulating layer and a sealing layer having excellent heat resistance can be obtained. For example, the resin composition is thermally cured according to the conditions described in the examples, and the specific glass transition temperature of the obtained cured product is preferably 140°C or higher, more preferably 145°C or higher, and particularly preferably 150°C. above. The upper limit of the glass transition temperature of the cured product of the resin composition is not particularly limited, but can be, for example, 300° C. or less. The glass transition temperature of the cured product of the resin composition can be measured by the method described in the Examples.

With the above-mentioned resin composition, the carbon black functions as a colorant, and therefore appropriate color development can be obtained depending on the application for which the carbon black is used. Generally, the carbon black system functions as a black pigment, and therefore the color of the cured product of the resin composition can be made black or a color close to black. For example, when the insulating layer is formed from a cured resin composition according to the method described in the Examples, a black insulating layer can be obtained. Specifically, the coordinate L ^* in the L ^* a ^* b ^* color system of the insulating layer is the same as the coordinate L * in the L ^* a ^* b ^* color system of the alumina white ^plate as the white standard plate. The difference ΔL ^* is preferably -100 or more, more preferably -40 or less, further preferably -50 or less, and particularly preferably -60 or less. Furthermore, the difference Δb between the coordinate b ^* in the L ^* a ^* b ^* color system of the insulating layer and the coordinate b ^* in the L ^* a ^* b ^* color system of the alumina white plate serving as the white standard plate ^* system is preferably -20 or more, more preferably -15 or more, particularly preferably -10 or more, preferably 20 or less, further preferably 15 or less, and particularly preferably 10 or less.

The above-mentioned resin composition can inhibit the aggregation of carbon black. by Conventionally, in resin compositions containing (B) inorganic fillers and (D) polymer resins, carbon blacks are generally prone to aggregation, so it is necessary to achieve excellent characteristics such as color development, minimum melt viscosity, and glass transition temperature. , and inhibiting the aggregation of carbon black are actually difficult. In contrast, the above-mentioned resin composition can suppress the aggregation of (C) carbon black even when (B) the inorganic filler and (D) the polymer resin are combined. Therefore, while achieving a balance among characteristics such as color development, minimum melt viscosity, and glass transition temperature as mentioned above, it is also possible to suppress the occurrence of defects caused by aggregation of (C) carbon black. Specifically, when forming a resin composition layer, it is possible to reduce the occurrence frequency of aggregates of (C) carbon black having a maximum length exceeding 100 μm.

The cured material system of the above-mentioned resin composition usually has excellent insulating properties. The inorganic filler (B) can obtain excellent insulating properties and can suppress the aggregation of carbon black. Therefore, it can suppress the decrease in insulating properties caused by the aggregation of carbon black. In addition, the generation of agglomerates of carbon black can be suppressed, so a resin composition can be used as a material for a thin insulating layer.

The cured product system of the above-mentioned resin composition usually has excellent sealing performance. (B) The inorganic filler can obtain excellent sealing performance, and can suppress the aggregation of carbon black, thereby suppressing the occurrence of cracks starting from the agglomerates of carbon black, and suppressing the sealing performance caused by the cracks. of reduction.

[13.Use of resin composition]

Taking advantage of the above advantages, a sealing layer and an insulating layer can be formed by using the cured product of the aforementioned resin composition. Therefore, this resin composition system can make Resin composition used as semiconductor sealing or insulating layer.

For example, the aforementioned resin composition system can be suitably used as a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package), and for forming a circuit board (including a printed wiring board). Resin composition for the insulating layer (resin composition for the insulating layer of the circuit board). Furthermore, for example, the resin composition described above can be suitably used as a resin composition for forming a conductor layer (including a rewiring layer) formed on an insulating layer (an insulating layer for forming a conductor layer). resin composition for forming).

For example, the resin composition described above can be suitably used as a resin composition for sealing a semiconductor wafer (a resin composition for sealing a semiconductor wafer).

Examples of semiconductor chip packages suitable for use with a sealing layer or an insulating layer formed of a cured product of the resin composition include FC-CSP, MIS-BGA package, ETS-BGA package, and Fan-out type WLP ( Wafer Level Package), Fan-in type WLP, Fan-out type PLP (Panel Level Package), Fan-in type PLP.

In addition, the aforementioned resin composition system can be used as an underfill material, and can also be used as a material for MUF (Molding Under Filling), which is used after connecting a semiconductor wafer and a substrate, for example.

Furthermore, the aforementioned resin composition can be used in a wide range of applications such as sheet-like laminates such as resin sheets and prepregs, solder resists, die bonding materials, hole-filling resins, and component embedding resins. middle.

[14.Resin sheet]

The resin sheet of the present invention has a support body and a resin composition layer provided on the support body. The resin composition layer is a layer containing the resin composition of the present invention, and can generally be formed from the resin composition.

From the viewpoint of thinning, the thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, more preferably 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, or 40 μm or less. The lower limit of the thickness of the resin composition layer is not particularly limited, and may be, for example, 1 μm or more, 5 μm or more, 10 μm or more, or the like.

Examples of the support include films, metal foils, and release papers made of plastic materials, and films and metal foils made of plastic materials are preferred.

When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes referred to as "PET"), polyethylene naphthalate Acrylic polymerization such as polyester (hereinafter sometimes abbreviated to "PEN"); polycarbonate (hereinafter sometimes abbreviated to "PC"); polymethyl methacrylate (hereinafter sometimes abbreviated to "PMMA"), etc. material; cyclic polyolefin; triacetyl cellulose (hereinafter sometimes referred to as "TAC"); polyether sulfide (hereinafter sometimes referred to as "PES"); polyetherketone; polyimide, etc. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and polyethylene terephthalate is particularly preferred in terms of convenience.

When using metal foil as a support, as gold Examples of metal foil include copper foil, aluminum foil, and the like. Among them, copper foil is preferred. As the copper foil, foils made of copper as a single metal or foils made of alloys of copper and other metals (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) can be used. .

The support system can be subjected to treatments such as matting treatment, corona discharge treatment, static electricity suppression treatment, etc. on the surface bonded to the resin composition layer.

In addition, as the support system, a release layer-equipped support body having a release layer on the surface bonded to the resin composition layer can be used. Examples of the release agent that can be used in the release layer of a support with a release layer include alkyd resins, polyolefin resins, urethane resins, and polysiloxane resins. More than one release agent selected from. Examples of commercially available release agents include "SK-1", "AL-5", and "AL-7" made by LINTEC, which are alkyd resin release agents. Examples of the support with a release layer include "Lumirror T60" manufactured by Toray Corporation, "PUREX" manufactured by Teijin Corporation, and "Unipeel" manufactured by Unitika Corporation.

The thickness of the support is preferably in the range of 5 μm to 75 μm, and further preferably in the range of 10 μm to 60 μm. Furthermore, when using a support with a release layer, it is preferable that the thickness of the entire support with a release layer is within the above range.

The resin sheet can be produced by, for example, dissolving the resin composition in an organic solvent to prepare a resin varnish, applying the resin varnish to the support using a coating device such as a die coater, and then applying the resin varnish to the support. This is dried to form a resin composition layer.

Examples of organic solvents include ketone solvents such as acetone, methyl ethyl ketone (MEK), and cyclohexanone; ethyl acetate, butyl acetate, cellosolve acetate, and propylene glycol monomethyl ether acetate. Acetate solvents such as and carbitol acetate; carbitol solvents such as cellosolve and butyl carbitol; aromatic hydrocarbon solvents such as toluene and xylene; dimethylformamide, dimethyl Acetamide-based solvents such as DMAc and N-methylpyrrolidone. One type of organic solvent may be used alone, or two or more types may be used in combination.

Drying can be carried out by well-known methods such as heating and blowing hot air. The content of the organic solvent in the dry resin composition layer is usually 10% by mass or less, preferably 5% by mass or less. It varies depending on the boiling point of the organic solvent in the resin varnish. For example, if a resin varnish containing 30% to 60% by mass of organic solvent is used, dry it at 50°C to 150°C for 3 minutes~ 10 minutes to form a resin composition layer.

The resin sheet may include any layer other than the support and the resin composition layer as needed. For example, a protective film may be provided on the surface of the resin sheet that is not in contact with the support of the resin composition layer (that is, the surface opposite to the support) based on the support. The thickness of the protective film is, for example, 1 μm to 40 μm. The protective film can prevent dust or the like from adhering to or scratching the surface of the resin composition layer. If the resin sheet has a protective film, the protective film can be peeled off to become a usable resin sheet. The resin sheet can be rolled into a roll for storage.

The resin sheet can be suitably used to form an insulating layer (insulating layer of the semiconductor chip package) when manufacturing the semiconductor chip package. with resin sheets). For example, a resin sheet can be suitably used to form an insulating layer of a circuit board (a resin sheet for an insulating layer of a circuit board), and can be suitably used to form interlayer insulation on which a conductor layer is formed by plating. layer (for the interlayer insulating layer of a circuit board where a conductor layer is formed by plating). Examples of packages using such a substrate include FC-CSP, MIS-BGA packages, and ETS-BGA packages.

Moreover, the resin sheet can be suitably used for sealing a semiconductor wafer (resin sheet for semiconductor wafer sealing), or for forming wiring on a semiconductor wafer (resin sheet for semiconductor wafer wiring formation). Examples of applicable semiconductor chip packages include Fan-out type WLP (Wafer Level Package), Fan-in type WLP, Fan-out type PLP (Panel Level Package), Fan-in type PLP, and the like.

In addition, the resin sheet can be used as the material of the MUF used to connect the semiconductor wafer and the substrate.

Furthermore, the resin sheet can be used in a wide range of other applications requiring high insulation reliability. For example, the resin sheet can be suitably used to form an insulating layer of a circuit board such as a printed wiring board.

[15.Circuit board]

The circuit board of the present invention includes an insulating layer formed of a cured product of the resin composition of the present invention. The circuit board can be manufactured, for example, by a manufacturing method including the following steps (1) and (2).

(1) The step of forming a resin composition layer on a substrate.

(2) The step of thermally hardening the resin composition layer to form an insulating layer steps.

In step (1), the substrate is prepared. Examples of the base material include glass epoxy substrates, metal substrates (stainless steel or cold-rolled steel plates (SPCC), etc.), polyester substrates, polyimide substrates, BT resin substrates, thermosetting polyphenylene ether substrates, and the like. substrate. In addition, the base material may have a metal layer such as copper foil on the surface as a part of the base material. For example, a base material having a releasable first metal layer and a second metal layer on both surfaces can be used. When such a base material is used, a conductor layer serving as a wiring layer that functions as a circuit wiring is usually formed on the surface opposite to the first metal layer of the second metal layer. Examples of a base material having such a metal layer include ultra-thin copper foil "Micro Thin" with a supporting copper foil manufactured by Mitsui Mining & Metals Co., Ltd.

In addition, a conductor layer may be formed on one or both surfaces of the base material. In the following description, a member including a base material and a conductor layer formed on the surface of the base material may be referred to as a "base material with a wiring layer." Examples of the conductor material included in the conductor layer include a group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. A material made of more than one selected metal. As the conductor material, a simple metal or an alloy may be used. Examples of alloys include alloys of two or more metals selected from the above-mentioned groups (for example, nickel-chromium alloys, copper-nickel alloys, and copper-titanium alloys). Among them, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper as elemental metals; and nickel‧ Chromium alloy, copper‧nickel alloy, copper‧titanium alloy For better. Among them, elemental metals of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper; and nickel-chromium alloys are more preferred, and elemental metals of copper are more preferred.

The conductor layer may be patterned in order to function as a wiring layer, for example. At this time, the line width (circuit width)/space (width between circuits) ratio of the conductor layer is not particularly limited, but is preferably 20/20 μm or less (that is, the pitch is 40 μm or less), and more preferably 10/10 μm or less. It is more preferably 5/5 μm or less, still more preferably 1/1 μm or less, and particularly preferably 0.5/0.5 μm or more. The spacing does not need to be the same throughout the conductor layer. The minimum pitch of the conductor layer can be, for example, 40 μm or less, 36 μm or less, or 30 μm or less.

The thickness of the conductor layer varies depending on the design of the circuit substrate, preferably 3 μm~35 μm, more preferably 5 μm~30 μm, more preferably 10~20 μm, and particularly preferably 15~20 μm. In addition, when the insulating layer is ground or ground after the formation of the insulating layer to expose the conductor layer, and the conductor layer is connected between layers, the conductor layer that is connected between the layers and the conductor layer that is not connected between the layers are represented by Different thicknesses are preferred. Among the conductor layers, the thickness of the thickest conductor layer (conductive pillar) varies depending on the desired design of the wiring board, but is preferably 2 μm or more and 100 μm or less. The thickness of the conductor layer is formed by repeating the aforementioned pattern and thus can be adjusted. In addition, the conductor layer system connected between layers can be formed into a convex shape.

The conductor layer can be formed, for example, by a method including the following steps: a step of laminating a dry film (photoresist film) on a substrate; and using a photomask to expose and develop the dry film according to specified conditions. The step of patterning to obtain a patterned dry film; drying the developed pattern The step of using the dry-type film as a plating mask and forming a conductor layer through plating methods such as electrolytic plating; and the step of peeling off the patterned dry-type film. As the dry film system, a photosensitive dry film made of a photoresist composition can be used. For example, a dry film made of a resin such as novolac resin or acrylic resin can be used. The lamination conditions of the base material and the dry film can be the same as the lamination conditions of the base material and the resin sheet described later. The dry film can be peeled off using an alkaline peeling liquid such as sodium hydroxide solution. Unnecessary wiring patterns can also be removed by etching if necessary.

After preparing the base material, a resin composition layer is formed on the base material. When the conductor layer is formed on the surface of the base material, the resin composition layer is preferably formed so that the conductor layer is embedded in the resin composition layer.

The resin composition layer is usually formed by laminating a resin sheet and a base material. This lamination can be performed, for example, by removing the protective film of the resin sheet and then pressing the resin sheet onto the base material with heat from the support side to bond the resin composition layer to the base material. Examples of a member for heat-pressing a resin sheet onto a base material (hereinafter sometimes referred to as a "heat-pressing member") include a heated metal plate (SUS mirror plate, etc.) or a metal roller (SUS roller). However, it is better not to directly press the heated pressing member onto the resin sheet, but to press the resin sheet through an elastic material such as heat-resistant rubber so that the resin sheet can fully follow the surface irregularities of the base material. good.

The lamination system of the base material and the resin sheet can be implemented, for example, by a vacuum lamination method. In the vacuum lamination method, the heating and pressing temperature system is preferably 60°C. ~160℃, preferably in the range of 80℃~140℃. The heating and pressing pressure is preferably in the range of 0.098MPa to 1.77MPa, and more preferably in the range of 0.29MPa to 1.47MPa. The heating and pressing time is preferably in the range of 20 seconds to 400 seconds, and more preferably in the range of 30 seconds to 300 seconds. The lamination system is preferably carried out under reduced pressure conditions of 13 hPa or less.

After lamination, the laminated resin sheets can be smoothed by pressing the heated pressing member under normal pressure (atmospheric pressure), for example, from the support side. The pressing conditions of the smoothing treatment can be set to the same conditions as the heat pressing conditions of the above-mentioned lamination. However, lamination and smoothing can be performed continuously using a vacuum laminating machine.

After forming the resin composition layer on the base material, in step (2), the resin composition layer is thermally hardened to form an insulating layer. The thermal hardening conditions of the resin composition layer vary depending on the type of the resin composition, etc., but the curing temperature is usually in the range of 120°C to 240°C (preferably in the range of 150°C to 220°C, and more preferably The range of 170°C to 200°C), the hardening time is usually in the range of 5 minutes to 120 minutes (preferably 10 minutes to 100 minutes, and more preferably 15 minutes to 90 minutes).

Before thermally curing the resin composition layer, the resin composition layer may be heated at a temperature lower than the curing temperature to perform a preheating treatment. For example, before thermally hardening the resin composition layer, the resin composition can usually be composed at a temperature of 50°C or more and less than 120°C (preferably 60°C or more and 110°C or less, and more preferably 70°C or more and 100°C or less). The preheating time of the material layer is usually more than 5 minutes (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes).

In the above manner, a circuit substrate with an insulating layer can be manufactured. In addition, the manufacturing method of the circuit board may further include arbitrary steps.

The method of manufacturing a circuit board may include, for example, a step of peeling off the support of the resin sheet. The support system may be peeled off before the resin composition layer is thermally cured, or may be peeled off after the resin composition layer is thermally cured.

The manufacturing method of the circuit substrate may include, for example, a step of grinding the surface of the insulating layer after forming the insulating layer. The grinding method is not particularly limited. For example, a surface grinding disc can be used to grind the surface of the insulating layer.

The manufacturing method of the circuit substrate may include, for example, step (3) of connecting the conductor layers between layers. This step (3) usually causes the conductor layer provided on one side of the insulating layer (for example, the conductor layer formed on the surface of the base material) to be connected to the other side of the conductor layer. This step (3) may include forming a via hole on the insulating layer, and then forming a conductor layer at an appropriate position on the insulating layer including the position where the via hole is formed to perform interlayer connection. In addition, step (3) may also include grinding or grinding the insulating layer to expose the conductor layer formed on one side of the insulating layer to perform interlayer connection.

When using a through hole for interlayer connection, for example, after forming a through hole in an insulating layer formed on a base material with a wiring layer, a conductor layer is formed on the side opposite to the base material with the insulating layer to perform interlayer connection. connection. Examples of methods for forming through holes include laser irradiation, etching, mechanical drilling, and the like. Among them, laser irradiation is preferred. This laser irradiation system can use carbon dioxide gas laser, YAG laser, excimer laser, etc. Any light source can be used with an appropriate laser processing machine. For example, by irradiating the support side of the resin sheet with laser and penetrating the support and the insulating layer, a through hole can be formed to expose the conductor layer on the surface of the base material.

Laser irradiation can be carried out according to the appropriate steps according to the selected laser processing machine. The shape of the through hole is not particularly limited, but is generally circular or substantially circular. The shape of the through hole refers to the shape of the outline of the opening when viewed along the extending direction of the through hole.

After the through hole is formed, it is better to remove the slag in the through hole. This step is sometimes referred to as the desmear step. For example, when a conductor layer is formed on an insulating layer through a plating step, a wet desmear process may also be performed on the through hole. Furthermore, when the conductor layer is formed on the insulating layer by a sputtering step, a dry desmearing step such as a plasma treatment step may be performed. Furthermore, the insulation layer can be roughened through the desmearing step.

In addition, before forming the conductor layer on the insulating layer, the insulating layer may be roughened. According to this roughening treatment, the surface including the insulating layer in the through hole can generally be roughened. As the roughening treatment system, any roughening treatment of dry type and wet type can be performed. Examples of dry roughening treatment include plasma treatment and the like. Examples of the wet roughening treatment include a method of sequentially performing swelling treatment with a swelling liquid, roughening treatment with an oxidizing agent, and neutralization treatment with a neutralizing liquid.

The surface roughness Ra of the roughened insulating layer surface is preferably 350nm or more, more preferably 400nm or more, more preferably 450nm or more, preferably 700nm or less, further preferably 650nm or less, more preferably Below 600nm. Surface roughness Ra can be measured using a non-contact surface roughness meter.

After the through holes are formed, a conductor layer is formed on the insulating layer. By forming a conductor layer at the position where the through hole is formed, the newly formed conductor layer is electrically connected to the conductor layer on the surface of the base material and is connected between layers. Examples of methods for forming the conductor layer include plating, sputtering, and evaporation. Among them, plating is preferred. In a suitable embodiment, the surface of the insulating layer is plated by an appropriate method such as a semi-additive method or a full-additive method, thereby forming a conductor layer having a desired wiring pattern. Furthermore, when the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by the elimination process. The material system of the formed conductor layer may be a single metal or an alloy. In addition, the conductor layer may have a single-layer structure or a multi-layer structure including two or more layers of different types of materials.

Here, an example of an embodiment in which a conductive layer is formed on an insulating layer will be described in detail. On the surface of the insulating layer, a plating seed layer is formed by electroless plating. Next, on the formed plating seed layer, a mask pattern is formed to expose a part of the plating seed layer in accordance with a desired wiring pattern. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating. At this time, at the same time as the electrolytic plating layer is formed, the through holes are buried by electrolytic plating to form filled holes. After the electrolytic plating layer is formed, the mask pattern is removed. Thereafter, unnecessary plating seed layer is removed by processing such as etching, thereby forming a conductor layer having a desired wiring pattern. However, when forming the conductor layer, the dryer used in the formation of the mask pattern The formula film is the same as the dry film mentioned above.

The conductive layer is not only a linear wiring, but may also include, for example, an electrode pad (land) on which an external terminal can be mounted. Alternatively, the conductor layer may be composed of electrode pads only.

In addition, the conductor layer can be formed by forming the electrolytic plating layer and filling the holes without using a mask pattern after the formation of the plating seed layer, and then patterning through etching.

When the interlayer connection is performed by grinding or grinding the insulating layer, for example, after grinding or grinding the insulating layer formed on the base material with the wiring layer, the conductor layer formed on the base material Exposed on the side opposite to the base material of the insulating layer. As the polishing method and grinding method of the insulating layer, any method that can expose the conductor layer on the surface of the base material can be used. Among them, the method of obtaining a parallel grinding surface or grinding surface by grinding or cutting the layer plane of the insulating layer is preferred. Examples include a chemical mechanical polishing method using a chemical mechanical polishing device, a mechanical polishing method such as polishing, a surface grinding method using a grinding wheel rotation, and the like. In addition, when the interlayer connection is made by grinding or grinding the insulating layer, the same as the case of using through holes for interlayer connection, the slag removal step, the roughening step, and the insulating step can also be performed. The step of forming a conductor layer on the layer. In addition, it is not necessary to expose the entire conductor layer on the surface of the base material, and a part of it may be exposed.

The manufacturing method of the circuit substrate may include, for example, step (4) of removing the base material. By removing the base material, a circuit board having an insulating layer and a conductor layer embedded in the insulating layer can be obtained. For example, if you use tools This step (4) can be performed when there are substrates for the first metal layer and the second metal layer that can be peeled off. Suitable examples are described below. A conductor layer is formed on the surface of the base material having the first metal layer and the second metal layer and the second metal layer. Furthermore, a resin composition layer is formed on the second metal layer so that the conductor layer is embedded in the resin composition layer, and is thermally cured to obtain an insulating layer. After that, after interlayer connection is performed as required, the portion of the base material other than the second metal layer is peeled off. Furthermore, the second metal layer is etched and removed using an etching solution such as a copper chloride aqueous solution. Thereby, the base material can be removed. At this time, if necessary, the base material can be removed while protecting the conductor layer with a protective film.

In other embodiments, the circuit board can be manufactured using prepreg. The prepreg system impregnates the resin composition into the sheet-like fiber base material through methods such as hot melt method, solvent method, etc. Examples of the sheet-like fiber base material include glass cloth, aromatic polyamide nonwoven fabric, liquid crystal polymer nonwoven fabric, and the like. Moreover, from the viewpoint of thinning, the thickness of the sheet-like fiber base material is preferably 900 μm or less, more preferably 800 μm or less, more preferably 700 μm or less, particularly preferably 600 μm or less, and further preferably 1 μm or more. , 1.5μm or more, 2μm or more. The thickness of the prepreg can be in the same range as the resin composition layer in the above-mentioned resin sheet. The manufacturing method of a circuit board using such a prepreg is basically the same as when using a resin sheet.

[16.Semiconductor chip package]

Semiconductor chip packaging system package related to first embodiment of the present invention It includes the above-mentioned circuit substrate and a semiconductor chip mounted on the circuit substrate. The semiconductor chip packaging system can be manufactured by bonding the semiconductor chip to the circuit substrate.

The bonding conditions between the circuit board and the semiconductor wafer can be any condition in which conductive connection can be made between the terminal electrodes of the semiconductor wafer and the circuit wiring of the circuit board. For example, conditions used in flip-chip mounting of semiconductor wafers can be adopted. Furthermore, for example, the semiconductor chip and the circuit board may be bonded via an insulating adhesive.

An example of the bonding method is a method of pressing a semiconductor wafer onto a circuit board. As the pressing conditions, the pressing temperature is usually in the range of 120°C to 240°C (preferably in the range of 130°C to 200°C, and more preferably in the range of 140°C to 180°C), and the pressing time is usually 1 The range is from seconds to 60 seconds (preferably from 5 seconds to 30 seconds).

Another example of the bonding method is a method of re-soldering the semiconductor wafer to the circuit board and bonding the semiconductor wafer. The reflow conditions can be set within the range of 120°C to 300°C.

After the semiconductor wafer is bonded to the circuit substrate, the semiconductor wafer can be filled with molded underfill. As the molding underfill material, the above-mentioned resin composition can be used, and the above-mentioned resin sheet can also be used.

A semiconductor chip packaging system according to a second embodiment of the present invention includes a semiconductor wafer and a cured product of the resin composition that seals the semiconductor wafer. In such a semiconductor chip package, a cured resin composition usually functions as a sealing layer. as second Examples of the semiconductor chip package according to the embodiment include Fan-out type WLP.

FIG. 1 is a cross-sectional view schematically showing a Fan-out type WLP as an example of a semiconductor chip package according to the second embodiment of the present invention. The semiconductor chip package 100 of the Fan-out type WLP, for example, as shown in FIG. 1 , includes: a semiconductor wafer 110; a sealing layer 120 formed to cover the periphery of the semiconductor wafer 110; The sealing layer 120 is the surface opposite to the rewiring formation layer 130 as an insulating layer; the rewiring layer 140 as a conductor layer; the solder resist layer 150; and the bumps 160.

The manufacturing method of such a semiconductor chip package may include the following steps: (A) a step of laminating a temporary fixing film on a base material, (B) a step of temporarily fixing the semiconductor chip to the temporary fixing film, (C) The step of forming a sealing layer on the semiconductor wafer, (D) the step of peeling off the base material and the temporary fixing film from the semiconductor wafer, (E) forming an insulating layer on the surface of the semiconductor wafer from which the base material and the temporary fixing film have been peeled off (F) forming a rewiring layer as a conductor layer on the rewiring forming layer; and (G) forming a solder resist layer on the rewiring layer.

Furthermore, the manufacturing method of the aforementioned semiconductor chip package may include: (H) cutting a plurality of semiconductor chip packages into half pieces one by one. Conductor chip packages are used to perform individual chipping steps. This manufacturing method will be described in detail below.

(Step (A))

Step (A) is a step of laminating a temporary fixing film on the base material. The lamination conditions of the base material and the temporarily fixed film can be the same as the lamination conditions of the base material and the resin sheet in the manufacturing method of the circuit board.

Examples of the base material include, for example, silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel plates (SPCC); epoxy resins such as FR-4 substrates impregnated with glass fibers, etc. A substrate that has been thermally cured; a substrate made of bismaleimidetriazine resin such as BT resin, etc.

As the temporary fixing film, any material that can be peeled off from the semiconductor wafer and can temporarily fix the semiconductor wafer can be used. Examples of commercially available products include "REVALPHA" manufactured by Nitto Denko Co., Ltd.

(Step (B))

Step (B) is a step of temporarily fixing the semiconductor wafer to the temporary fixing film. The semiconductor wafer can be temporarily fixed using a device such as a flip chip bonding machine or a die bonding machine. The arrangement layout and arrangement number of the semiconductor chip can be appropriately set according to the shape and size of the temporary film, the target production number of semiconductor packages, etc. For example, the semiconductor wafers may be arranged in a matrix of multiple rows and columns and temporarily fixed.

(Step (C))

Step (C) is a step of forming a sealing layer on the semiconductor wafer. The sealing layer is formed from a cured product of the above-mentioned resin composition. The sealing layer is usually formed by a method including a step of forming a resin composition layer on a semiconductor wafer, and a step of thermally hardening the resin composition layer to form the sealing layer.

The resin composition layer is formed on the semiconductor wafer, usually using the above-mentioned resin sheet. Specifically, a resin composition layer of a resin sheet and a semiconductor wafer are laminated to form a resin composition layer on the semiconductor wafer. The above-mentioned resin composition usually has a low minimum melt viscosity, so the semiconductor wafer can be well sealed through the above-mentioned lamination.

The lamination of the semiconductor wafer and the resin sheet can be performed, for example, as follows: after removing the protective film of the resin sheet, the resin sheet is heated and pressed onto the semiconductor wafer from the support side, so that the resin composition layer is laminated combined on a semiconductor wafer. Examples of the heat-pressing member for heat-pressing the resin sheet onto the semiconductor wafer include a heated metal plate (SUS mirror plate, etc.) or a metal roller (SUS roller). Furthermore, it is preferable not to directly press the heat pressing member onto the resin sheet, but to press the resin sheet through an elastic material such as heat-resistant rubber so that the resin sheet can fully follow the surface irregularities of the semiconductor wafer.

In addition, the lamination of the semiconductor wafer and the resin sheet can be accomplished by a vacuum lamination method after removing the protective film of the resin sheet. Give. The lamination conditions in the vacuum lamination method can be set to be the same as the lamination conditions of the base material and the resin sheet in the circuit board manufacturing method.

The support system of the resin sheet may be peeled off before the resin sheet is laminated on the semiconductor wafer, or may be peeled off after the semiconductor wafer and the resin sheet are laminated and before the resin composition layer is thermally cured, or it may be peeled off before the semiconductor wafer is laminated. The wafer and the resin sheet are peeled off after thermally curing the resin composition layer.

In addition, the resin composition layer described above can be used to form the resin composition layer on the semiconductor wafer. Specifically, it can be performed by coating a resin composition on a semiconductor wafer. The coating conditions of the resin composition can be set to be the same as those used when forming the resin composition layer in the method for producing a resin sheet.

After the resin composition layer is formed on the semiconductor wafer, the resin composition layer is thermally cured to obtain a sealing layer covering the semiconductor wafer. Thereby, the semiconductor wafer can be sealed by the hardened material of the resin composition. The thermal curing conditions of the resin composition layer can be the same as those of the thermal curing conditions of the resin composition layer in the manufacturing method of the circuit board. Furthermore, before thermally curing the resin composition layer, the resin composition layer may be heated at a temperature lower than the curing temperature to perform a preheating treatment. The processing conditions of this preheating process can be the same as those of the preheating process in the manufacturing method of a circuit board.

(Step (D))

Step (D) is to peel the base material and the temporarily fixed film from the semiconductor wafer steps. The peeling method should be an appropriate method according to the material of the temporarily fixed film. Examples of the peeling method include a method of peeling the temporarily fixed film by heating, foaming or expanding it. As a peeling method, for example, the temporarily fixed film is irradiated with ultraviolet rays through the base material to reduce the adhesive force of the temporarily fixed film to perform peeling.

In the method of peeling off by heating, foaming or expanding the temporarily fixed film, the heating conditions are usually 100°C to 250°C for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of peeling off by irradiating ultraviolet rays to reduce the adhesive force of the temporarily fixed film, the irradiation dose of ultraviolet rays is usually 10mJ/cm ² to 1000mJ/cm ² .

(Step (E))

Step (E) is a step of forming a rewiring formation layer as an insulating layer on the surface of the semiconductor wafer from which the base material and the temporary fixing film have been peeled off.

The material of the rewiring forming layer can be any material that has insulating properties when forming the rewiring forming layer. Among them, photosensitive resin and thermosetting resin are preferable from the viewpoint of ease of manufacturing the semiconductor chip package. In addition, the resin composition of the present invention can be used as the thermosetting resin.

After the rewiring forming layer is formed, in order to connect the semiconductor chip and the rewiring layer between layers, a through hole can be formed on the rewiring forming layer.

When the material of the rewiring forming layer is a photosensitive resin, the method of forming the through hole is usually to use a mask pattern to rewire the rewiring. The surface of the formation layer is irradiated with active energy rays, thereby photohardening the rewiring formation layer in the irradiated portion. Examples of active energy rays include ultraviolet rays, visible rays, electron rays, X-rays, etc., and ultraviolet rays are particularly preferred. The amount and time of ultraviolet irradiation can be appropriately set according to the photosensitive resin. Examples of the exposure method include a contact exposure method in which the mask pattern is closely adhered to the rewiring formation layer and exposed, and a parallel light ray is used to expose without adhering the mask pattern to the rewiring formation layer. The non-contact exposure method, etc.

After the rewiring forming layer is photocured, the rewiring forming layer is developed to remove unexposed portions to form through holes. The development system can perform either wet development or dry development. Examples of the development method include a dipping method, a mixing method, a spray method, a brushing method, a shaking dipping method, and the like. From the viewpoint of analytical properties, the mixing method is suitable.

When the material of the rewiring formation layer is a thermosetting resin, examples of the method for forming the through hole include laser irradiation, etching, and mechanical drilling. Among them, laser irradiation is preferred. Laser irradiation can be performed using an appropriate laser processing machine using a light source such as carbon dioxide laser, UV-YAG laser, or excimer laser.

The shape of the through hole is not particularly limited, but is generally considered to be circular or substantially circular. The top diameter of the through hole is preferably 50 μm or less, more preferably 30 μm or less, more preferably 20 μm or less, preferably 3 μm or more, preferably 10 μm or more, and more preferably 15 μm or more. Here, the diameter of the tip of the through hole refers to the diameter of the opening of the through hole on the surface of the rewiring formation layer.

(Step (F))

Step (F) is a step of forming a rewiring layer as a conductor layer on the rewiring forming layer. The method of forming the rewiring layer on the rewiring formation layer can be the same as the method of forming the conductor layer on the insulating layer in the manufacturing method of the circuit board. Furthermore, steps (E) and (F) are repeated, and rewiring layers and rewiring forming layers (build-up layers) can be alternately deposited.

(Step (G))

Step (G) is a step of forming a solder resist layer on the rewiring layer. The material of the solder resist layer can be any material that has insulation properties when forming the solder resist layer. Among these, photosensitive resin and thermosetting resin are preferable from the viewpoint of ease of manufacturing the semiconductor chip package. Moreover, the resin composition of this invention can be used as a thermosetting resin.

Furthermore, in step (G), bump processing may be performed to form bumps as necessary. Bump processing can be performed using methods such as solder balls and solder plating. In addition, the formation of the through hole in the bump processing can be performed in the same manner as step (E).

(Step (H))

The method of manufacturing a semiconductor chip package may also include step (H) in addition to steps (A) to (G). Step (H) is a step of cutting a plurality of semiconductor chip packages into individual semiconductor chip packages for individual wafers. Cutting the semiconductor wafer package into individual semiconductor wafers The method of encapsulating the body is not particularly limited.

In the semiconductor chip package according to the third embodiment of the present invention, for example, in the semiconductor chip package 100 shown in FIG. Flux layer 150 of the semiconductor chip package.

[17.Semiconductor device]

Examples of semiconductor devices equipped with the above-described semiconductor chip package include those provided in electrical products (such as computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical equipment, and televisions). ) and various semiconductor devices in vehicles (such as motorcycles, cars, trams, ships and aircraft, etc.).

[Example]

The present invention will be specifically described below using examples. However, the present invention is not limited to the following examples. In the following description, "parts" and "%" indicating amounts refer to "parts by mass" and "% by mass" respectively, unless otherwise specified. In addition, the operations described below are performed in an environment of normal temperature and pressure unless otherwise specified.

[Synthesis example 1]

In a reaction vessel, 69 g of bifunctional hydroxyl-terminated polybutadiene ("G-3000" manufactured by Nippon Soda Co., Ltd., number average molecular weight = 3000, hydroxyl equivalent = 1800 g/eq.) and aromatic hydrocarbon mixed solvent ( Idemitsu Petrochemical Co., Ltd. Prepare 40g of "Ipsol 150") and 0.005g of dibutyltin dilaurate, and mix to dissolve evenly. When it was in a uniform state, the temperature was raised to 50°C, and 8 g of isophorone diisocyanate ("IPDI" manufactured by Evonik Degussa Japan, isocyanate group equivalent = 113 g/eq.) was added while stirring, and the reaction was carried out for about 3 hours.

Next, the resulting reaction mass was cooled to room temperature. To the cooled reactant, 23 g of cresol novolak resin (ethyl diglycol acetate/"KA-1160" manufactured by DIC Corporation, hydroxyl equivalent = 117 g/eq.) and ethyl diglycol acetate (manufactured by DAICEL Corporation) were added )60g, while stirring, the temperature was raised to 80°C, and the reaction was carried out for about 4 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. When the disappearance of the NCO peak is confirmed and considered as the end of the reaction, the reactant is cooled to room temperature. Furthermore, the reaction product was filtered through a 100-mesh filter cloth to obtain elastomer A having a butadiene structure and a phenolic hydroxyl group (butadiene resin containing a phenolic hydroxyl group: non-volatile content 50% by mass). The number average molecular weight of elastomer A is 5500 and the glass transition temperature is -5°C.

[Synthesis example 2]

In a flask equipped with a stirring device, a thermometer and a condenser, 368.41 g of ethyl diglycol acetate and 368.41 g of an aromatic solvent ("Solvesso 150" manufactured by Exxon Mobil Corporation) were placed as a solvent. Furthermore, 100.1 g (0.4 mol) of diphenylmethane diisocyanate, and polycarbonate diol ("C-2015N" manufactured by Kuraray Co., Ltd., number average molecular weight: about 2000, hydroxyl equivalent = 1000 g) were put into the aforementioned flask. /eq., non-volatile components: 100%) 400g (0.2 mol), and reacted at 70°C for 4 hours.

Next, 195.9 g (0.2 mol) of nonylphenol novolac resin (hydroxyl equivalent = 229.4 g/eq, average function 4.27, average calculated molecular weight 979.5 g/mol), and ethylene glycol were placed in the aforementioned flask. 41.0 g (0.1 mol) of alcohol bisanhydrous trimellitate was heated to 150°C over 2 hours and allowed to react for 12 hours. The disappearance of the NCO peak at 2250 cm ^-1 was confirmed by FT-IR. When the disappearance of the NCO peak is confirmed and considered as the end of the reaction, the reactant is cooled to room temperature. Furthermore, elastomer B (non-volatile content 50% by mass) having a carbonate structure was obtained by filtering through a 100-mesh filter cloth. The number average molecular weight of elastomer B is 6100 and the glass transition temperature is 5°C.

[Example 1]

At 25°C, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., a 1:1 mixture (mass ratio) of bisphenol A type epoxy resin and bisphenol F type epoxy resin, and Oxygen equivalent: 169g/eq.) 25 parts, glycidyl amine type epoxy resin (Sumitomo Chemical Co., Ltd. "ELM-100", epoxy equivalent: 107g/eq.) 5 parts, biphenyl type epoxy resin (Nippon Kayaku "NC3000L" produced by the company, epoxy equivalent 269g/eq.) 20 parts, 3 parts of amphiphilic polyether block copolymer ("Fortegra100" produced by Dow Chemical Co., number average molecular weight 6700), phenylamino group 380 parts of spherical silica (average particle diameter 0.5 μm, "SO-C2" manufactured by Admatechs) surface-treated with a silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.), active ester compound ("HPC" manufactured by DIC Corporation) -8000-65T", 7.7 parts of a toluene solution with a non-volatile content of about 223 g/eq. and a non-volatile content of 65% by mass), a triazine skeleton-containing phenol novolak-based hardener ("LA-7054" manufactured by DIC Corporation, hydroxyl 8.3 parts of MEK solution with an equivalent weight of approximately 125 g/eq., 60% non-volatile content), phenoxy resin ("YX7553BH30" manufactured by Mitsubishi Chemical Corporation, 30 mass% non-volatile content: cyclohexanone: methyl ethyl ketone (MEK) ), 16.6 parts of a 1:1 solution, flame retardant ("HCA-HQ" manufactured by Sanko Corporation, 10-(2,5-dihydroxyphenyl)-10-hydrogen-9-oxa-10-phosphaphenanthrene- 10-5 parts of peroxide, average particle size 2 μm), 1.5 parts of carbon black A (DBP absorption capacity 120cm ³ /100g, pH = 6.5, average particle size 20 nm), hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd. "1B2PZ ”, 0.3 parts of 1-benzyl-2-phenylimidazole), 25 parts of methyl ethyl ketone, and 25 parts of cyclohexanone were mixed and uniformly dispersed using a high-speed rotating mixer to obtain a mixture. This mixture was filtered using a filter cartridge ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 1.

Furthermore, the amphiphilic polyether block copolymer ("Fortegra 100" manufactured by Dow Chemical Co.) is a liquid resin at room temperature of about 25°C, so its glass transition temperature is 30°C or less.

[Example 2]

Change the amount of carbon black A from 1.5 parts to 1.0 parts. Resin varnish 2 was prepared by carrying out the same operation as Example 1 except for the above matters.

[Example 3]

At 25°C, liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., a 1:1 mixture (mass ratio) of bisphenol A type epoxy resin and bisphenol F type epoxy resin, and Oxygen equivalent: 169g/eq.) 10 parts, glycidyl amine type epoxy resin (Sumitomo Chemical Co., Ltd. "ELM-100", epoxy equivalent: 107g/eq.) 5 parts, naphthalene type epoxy resin (DIC Co., Ltd. "HP4032SS" ”, 7 parts of epoxy equivalent: 151 g/eq.), 16 parts of elastomer A prepared in Synthesis Example 1 (non-volatile content 50% by mass), phenylaminosilane coupling agent (manufactured by Shin-Etsu Chemical Industry Co., Ltd. "KBM573" ”) 310 parts of surface-treated spherical silica (average particle size 0.5 μm, “SO-C2” manufactured by Admatechs), active ester compound (“HPC-8000-65T” manufactured by DIC, active group equivalent: approximately 223 g/ eq., 7.7 parts of toluene solution with 65 mass% non-volatile content), a phenol novolak-based hardener containing a triazine skeleton ("LA-7054" manufactured by DIC, hydroxyl equivalent of approximately 125 g/eq., 60% non-volatile content) MEK solution) 25 parts, carbon black A (DBP absorption 120cm ³ /100g, pH = 6.5, average particle size 20nm) 4 parts, hardening accelerator (Shikoku Chemical Industry Co., Ltd. "1B2PZ", 1-benzyl-2 -Phenylimidazole) and 20 parts of methyl ethyl ketone were mixed and uniformly dispersed using a high-speed rotating mixer to obtain a mixture. This mixture was filtered using a filter cartridge ("SHP050" manufactured by ROKITECHNO) to prepare resin varnish 3.

[Example 4]

Change the amount of carbon black A from 4 parts to 2 parts. Also, the amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Resin varnish 4 was prepared by carrying out the same operation as Example 3 except for the above matters.

[Example 5]

4 parts of carbon black B (DBP absorption capacity 70 cm ³ /100 g, pH = 3.5, average particle diameter 20 nm) was used instead of 1.5 parts of carbon black A. Resin varnish 5 was prepared by carrying out the same operation as Example 1 except for the above matters.

[Example 6]

2.5 parts of carbon black B (DBP absorption capacity 70cm ³ /100g, pH=3.5, average particle diameter 20nm) was used instead of 4 parts of carbon black A. Also, the amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Resin varnish 6 was prepared by carrying out the same operation as Example 3 except for the above matters.

[Example 7]

16 parts of elastomer B (50 mass % non-volatile matter) prepared in Synthesis Example 2 was used instead of 16 parts of elastomer A (50 mass % non-volatile matter) prepared in Synthesis Example 1. Furthermore, the amount of carbon black A was changed from 4 parts to 2 parts. Furthermore, the amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Resin varnish 7 was prepared by carrying out the same operation as Example 3 except for the above matters.

[Example 8]

The amount of liquid epoxy resin ("ZX1059" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd.) was changed from 25 parts to 22 parts. Moreover, 4 parts of carbon black B (DBP absorption capacity 70 cm ³ /100 g, pH = 3.5, average particle diameter 20 nm) was used instead of 1.5 parts of carbon black A. Furthermore, as the material of the resin varnish, 3 parts of rubber elastic epoxy resin ("YX7400" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 410g/eq.) can be added. Resin varnish 8 was prepared by carrying out the same operation as Example 1 except for the above matters.

[Comparative example 1]

No active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) is used. Furthermore, the amount of the phenol novolak-based hardener containing a triazine skeleton ("LA-7054" manufactured by DIC Corporation, 60% non-volatile matter) was changed from 8.3 parts to 16.6 parts. Furthermore, 1.5 parts of carbon black C (DBP absorption capacity 140cm ³ /100g, pH=8, average particle diameter 20nm) was used instead of 1.5 parts of carbon black A. Resin varnish 9 was prepared by carrying out the same operation as Example 1 except for the above matters.

[Comparative example 2]

No active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) is used. Furthermore, the amount of the phenol novolak-based hardener containing a triazine skeleton ("LA-7054" manufactured by DIC Corporation, non-volatile matter 60%) was changed from 25 parts to 33.3 parts. Furthermore, 4 parts of carbon black C (DBP absorption 140 cm ³ /100 g, pH = 8, average particle diameter 20 nm) was used instead of 4 parts of carbon black A. Also, the amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Resin varnish 10 was prepared by carrying out the same operation as Example 3 except for the above matters.

[Comparative example 3]

An active ester compound ("HPC-8000-65T manufactured by DIC Corporation") is not used. In addition, the amount of a phenol novolak-based hardener ("LA-7054" manufactured by DIC Corporation, non-volatile matter 60%) containing a triazine skeleton is changed from 8.3 copies changed to 16.6 copies. Furthermore, 0.6 part of carbon black C (DBP absorption 140 cm ³ /100 g, pH = 8, average particle diameter 20 nm) was used instead of 1.5 part of carbon black A. Furthermore, the amount of the hardening accelerator ("1B2PZ" manufactured by Shikoku Chemical Industry Co., Ltd.) was changed from 0.3 parts to 0.7 parts. Resin varnish 11 was prepared by carrying out the same operation as Example 1 except for the above matters.

[Comparative example 4]

No active ester compound ("HPC-8000-65T" manufactured by DIC Corporation) is used. Furthermore, the amount of the phenol novolak-based hardener containing a triazine skeleton ("LA-7054" manufactured by DIC Corporation, non-volatile matter 60%) was changed from 25 parts to 33.3 parts. Furthermore, 1.3 parts of carbon black C (DBP absorption 140 cm ³ /100 g, pH = 8, average particle diameter 20 nm) was used instead of 4 parts of carbon black A. Also, the amount of methyl ethyl ketone was changed from 20 parts to 25 parts. Resin varnish 12 was prepared by carrying out the same operation as Example 3 except for the above matters.

[Comparative example 5]

1.5 parts of carbon black C (DBP absorption capacity 140cm ³ /100g, pH=8, average particle diameter 20nm) was used instead of 1.5 parts of carbon black A. Resin varnish 13 was prepared by carrying out the same operation as Example 1 except for the above matters.

[Evaluation of shortcomings of carbon black in the resin composition layer]

A polyethylene terephthalate film ("PET501010" manufactured by LINTEC, thickness 50 μm) with a release treatment on the surface was prepared as a support. body. In such a way that the thickness of the dried resin composition layer becomes 50 μm, the resin varnishes prepared in the Examples and Comparative Examples are evenly applied to the release surface of the support, and the coating is heated at 80°C to 120°C (average 100 °C) for 5 minutes to obtain a resin sheet with a width of 30 cm and a length of 30 cm.

While irradiating the resin sheet with light, a digital microscope ("VH-Z20R" manufactured by Keyence Corporation) was used to observe the resin sheet from the support side, and the presence or absence of carbon black aggregates was investigated. If there are aggregates with a maximum length of more than 100 μm, it is judged as "bad", and if there are no aggregates, it is judged as "good".

[Measurement of ΔL* and Δb* of the insulating layer]

A polyethylene terephthalate film ("PET501010" manufactured by LINTEC Corporation, thickness 50 μm) with a release treatment on the surface was prepared as a support. In such a way that the thickness of the dried resin composition layer becomes 100 μm, the resin varnishes prepared in the Examples and Comparative Examples are evenly applied to the release surface of the support, and the coating is heated at 80°C to 120°C (average 100 °C) for 5 minutes to obtain a resin sheet.

Using a batch-type vacuum pressure laminating machine ("MVLP-500" manufactured by Meiji Co., Ltd.), the resin sheet and the copper-clad laminate are connected to each other in such a way that the resin composition layer of the resin sheet is connected to both sides of the copper-clad laminate. Plywood is laminated. Lamination is performed by lowering the pressure to 13 hPa or less after reducing the pressure for 30 seconds, and then pressing it down at 100° C. and a pressure of 0.74 MPa for 30 seconds. After lamination, the support is removed. After that, the resin was heated to hardening conditions of 100°C for 30 minutes and then 180°C for 30 minutes. The composition layer hardens, forming an insulating layer.

Using a colorimeter (KONICA MINOLTA JAPAN, "CR-10" manufactured by KONICA MINOLTA JAPAN), the L ^* a ^* b ^* coordinates L ^* and b ^* of the obtained insulating layer color system and the L ^* a ^* of the white standard plate were measured. b ^＊ represents the difference ΔL ^＊ and Δb ^＊ between the coordinates L ^＊ and b ^＊ of the color system. As the white standard plate system, an alumina white plate is used.

[Measurement of glass transition temperature of cured product of resin composition]

A polyethylene terephthalate film ("PET501010" manufactured by LINTEC Corporation, thickness 50 μm) with a release treatment on the surface was prepared as a support. In such a way that the thickness of the dried resin composition layer becomes 100 μm, the resin varnishes prepared in the Examples and Comparative Examples are evenly applied to the release surface of the support, and the coating is heated at 80°C to 120°C (average 100 °C) for 5 minutes to obtain a resin sheet.

The resin sheet was heated in an oven at 180° C. for 90 minutes to thermally harden the resin composition layer, thereby obtaining a cured layer of the resin composition. The support body was peeled off from the hardened material layer, and the hardened material layer was cut to obtain a test piece with a width of approximately 5 mm and a length of approximately 15 mm. This test piece was subjected to thermomechanical analysis by the tensile load method using a thermal mechanical analysis device ("Thermo Plus TMA8310" manufactured by Rigaku Corporation). Specifically, after the test piece was installed in the aforementioned thermomechanical analysis device, the measurement was performed twice continuously under the measurement conditions of a load of 1 g and a temperature rise rate of 5°C/min. Moreover, in the second measurement, the glass transition temperature Tg (°C) was calculated.

[Measurement of minimum melt viscosity of resin composition]

A polyethylene terephthalate film ("PET501010" manufactured by LINTEC Corporation, thickness 50 μm) with a release treatment on the surface was prepared as a support. In such a way that the thickness of the dried resin composition layer becomes 100 μm, the resin varnishes prepared in the Examples and Comparative Examples are evenly applied to the release surface of the support, and the coating is heated at 80°C to 120°C (average 100 °C) for 5 minutes to obtain a resin sheet.

After peeling off the support, the resin composition layer was compressed using a mold to produce measurement particles (18 mm in diameter, 1.2 g to 1.3 g). Then, the minimum melt viscosity of the measurement particles was measured using a dynamic viscoelasticity measuring device ("Rheosol-G3000" manufactured by UBM Corporation). Specifically, for 1 g of measurement particles, a parallel plate with a diameter of 18 mm was used, the temperature was increased in the temperature range from the starting temperature of 60°C to 200°C, and the dynamic viscoelastic modulus was measured to calculate the minimum melt viscosity (poise). The measurement conditions were a temperature rise rate of 5°C/min, a measurement temperature interval of 2.5°C, a vibration frequency of 1Hz, and a strain of 1deg.

[result]

The results of the above-mentioned Examples and Comparative Examples are shown in the following table. In the following tables, the amounts of each component represent parts by mass of non-volatile components. In addition, in the following tables, the abbreviations have the following meanings.

CB-A: Carbon Black A.

CB-B: carbon black B.

CB-C: carbon black C.

CB Disadvantages: Carbon Black Disadvantages.

[Review]

As can be seen from Tables 1 and 2, compared to the comparative examples using carbon blacks other than (C) carbon black, the examples using (C) carbon black having a DBP absorption amount in the specified range can achieve the same level of results. Or better color development, lowest melt viscosity and glass transition temperature, which can inhibit the occurrence of defects caused by the aggregation of carbon black. From this result, it was confirmed that according to the present invention, hair color and optimal A resin composition that can suppress the aggregation of carbon black while achieving a balance between characteristics such as low melt viscosity and glass transition temperature.

In addition, the present inventors repeated the experiments of Examples 1 to 8 described above until agglomerates of carbon black were generated. As a result, compared to Examples 1 to 4 and 7 using carbon black A, in Examples 5, 6, and 8 using carbon black B, the number of experiments required to produce agglomerates of carbon black was larger. This result shows that compared with the use of carbon black A, the use of carbon black B effectively suppresses the aggregation of carbon black and further reduces the frequency of generation of agglomerates.

100:Semiconductor chip package

110:Semiconductor wafer

120:Sealing layer

130:Rewiring formation layer

140:Rewiring layer

150: Solder resist layer

160: Bump

Claims (15)

A resin composition characterized by comprising: (A) epoxy resin; (B) inorganic filler, except that component (C) is removed; (C) carbon black with a DBP absorption capacity of 130cm ³ /100g or less; and (D) ) A polymer resin with a glass transition temperature of 30°C or lower, but with the organosilicon compound removed; wherein the amount of component (A) is 0.5% by mass or more and 30% by mass or less based on 100% by mass of non-volatile components in the resin composition. , the amount of component (B) is 30 mass % or more and 95 mass % or less based on 100 mass % of non-volatile components in the resin composition, and the amount of component (C) is 30 mass % or more and 95 mass % or less based on 100 mass % of non-volatile components in the resin composition. The amount is 0.1% by mass or more and 3% by mass or less, the amount of component (D) is 0.2% by mass or more and 20% by mass or less based on 100% by mass of non-volatile components in the resin composition, and the pH of component (C) is 1.0 Above 6.0 and below. The resin composition of claim 1, wherein the amount of component (B) is 75 mass% or more and 95 mass% or less based on 100 mass% of non-volatile components in the resin composition. The resin composition of claim 1, wherein the component (A) includes (A-1) a nitrogen-containing epoxy resin or an epoxy resin having a condensed ring structure. The resin composition of claim 1, wherein the component (A) includes (A-1) an epoxy resin containing nitrogen or an epoxy resin having a condensed ring structure, and (A-2) a liquid liquid at 25°C. Epoxy resin, and (A-3) an epoxy resin that is solid at 20°C. The resin composition of claim 1, wherein the component (D) has a polybutadiene structure, a polyalkylene structure, a polyalkyleneoxy structure, a polyisoprene structure, and a polyisobutylene structure in the molecule. One or more structures selected from the group consisting of , polycarbonate structure and polyacrylic acid structure. The resin composition of claim 1, wherein the component (D) has a functional group capable of reacting with the component (A). The resin composition of claim 1, wherein the component (D) has at least one selected from the group consisting of a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group and a urethane group. of functional groups. The resin composition of claim 1, wherein the number average molecular weight of component (D) is 4,000 or more and 100,000 or less. The resin composition of claim 1 is a resin composition for an insulating layer of a semiconductor chip package. The resin composition of claim 1 is a resin composition for semiconductor sealing. A resin sheet, characterized by having: a support body and a resin composition layer provided on the support body, the resin composition layer including the resin composition according to any one of claims 1 to 10. The resin sheet of Claim 11 is a resin sheet for an insulating layer of a semiconductor chip package. A circuit substrate including an insulating layer, characterized in that the insulating layer is formed by a cured product of the resin composition according to any one of claims 1 to 10. A semiconductor chip package is characterized by comprising: the circuit substrate of claim 13 and a semiconductor chip mounted on the circuit substrate. A semiconductor chip package, characterized by comprising a semiconductor wafer and a cured product of the resin composition according to any one of claims 1 to 10 for sealing the semiconductor wafer.