TWI802590B - Inductor and its manufacturing method - Google Patents
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Abstract
本發明之電感器具備:配線,其具有寬度W;以及第1電極及第2電極,其等與配線之兩端之各者連續。配線、第1電極及第2電極位於同一平面上。第1電極之平面面積S1及第2電極之平面面積S2分別為寬度W之平方值(W2 )以上。配置有配線之區域位於第1電極及第2電極間。區域具有:沿著第1電極及第2電極之對向方向之與第1電極及第2電極間之長度L相等之長邊方向長度X、及相對於長邊方向正交之方向上之短邊方向長度Y。長邊方向長度X為短邊方向長度Y之1.5倍值以上。The inductor of the present invention includes: a wiring having a width W; and a first electrode and a second electrode continuous with each of both ends of the wiring. The wiring, the first electrode, and the second electrode are located on the same plane. The planar area S1 of the first electrode and the planar area S2 of the second electrode are each equal to or greater than the square value of the width W (W 2 ). The area where wiring is arranged is located between the first electrode and the second electrode. The region has: a length X in the longitudinal direction equal to the length L between the first electrode and the second electrode along the opposing direction of the first electrode and the second electrode, and a short length X in a direction perpendicular to the longitudinal direction. Length Y in the side direction. The length X in the long side direction is at least 1.5 times the length Y in the short side direction.
Description
本發明係關於一種電感器及其製造方法。 The present invention relates to an inductor and its manufacturing method.
已知將電感器搭載於電子機器等且用作電壓轉換構件等被動元件。 It is known that an inductor is mounted on an electronic device or the like and used as a passive element such as a voltage converting member.
例如,提出一種積層晶片電感器,其係於在厚度方向上重疊之多層基板之各者設置形成為蜿蜒形狀之內部電極,利用導孔將複數個內部電極相互電性連接後,於最上部之內部電極之一端部形成上側外部電極,且於最下部之內部電極之另一端部形成下側外部電極而成(例如,參照專利文獻1)。 For example, a multilayer chip inductor is proposed, which is provided with internal electrodes formed in a meandering shape on each of the multilayer substrates overlapping in the thickness direction. An upper external electrode is formed at one end of the internal electrode, and a lower external electrode is formed at the other end of the lowermost internal electrode (for example, refer to Patent Document 1).
專利文獻1:日本專利特開平7-86039號公報 Patent Document 1: Japanese Patent Laid-Open No. 7-86039
近年來,正在推進電子機器之小型化,因此,對於所搭載之電感器亦要求小型化。然而,專利文獻1中記載之積層晶片電感器具備多層基板,故而有無法滿足上述要求之不良情況。
In recent years, the miniaturization of electronic equipment is being promoted, and therefore, the miniaturization of the inductors mounted thereon is also required. However, since the multilayer chip inductor described in
另一方面,亦要求電感器之低電阻化,但專利文獻1中記載之積層晶片電感器有無法滿足上述要求之不良情況。
On the other hand, low resistance of inductors is also required, but the multilayer chip inductor described in
本發明提供一種實現了小型化及低電阻化之電感器及其製造方法。 The present invention provides an inductor which realizes miniaturization and low resistance and a manufacturing method thereof.
本發明(1)包含一種電感器,其具備:配線,其具有寬度W;及第1電極及第2電極,其等與上述配線之兩端之各者連續;且上述配線、上述第1電極及上述第2電極位於同一平面上,上述第1電極之平面面積S1及上述第2電極之平面面積S2分別為上述寬度W之平方值(W2)以上,配置有上述配線之區域位於上述第1電極及上述第2電極間,上述區域具有:沿著上述第1電極及上述第2電極之對向方向之與上述第1電極及上述第2電極間之長度L相等之長邊方向長度X、及相對於上述長邊方向正交之方向上之短邊方向長度Y,上述長邊方向長度X為上述短邊方向長度Y之1.5倍值以上。 The present invention (1) includes an inductor comprising: a wiring having a width W; and a first electrode and a second electrode continuous with each of both ends of the wiring; and the wiring, the first electrode and the second electrode are located on the same plane, the planar area S1 of the first electrode and the planar area S2 of the second electrode are each equal to or greater than the square value of the width W (W 2 ), and the region where the wiring is arranged is located in the first electrode. Between the first electrode and the second electrode, the region has a length X in the longitudinal direction equal to the length L between the first electrode and the second electrode along the opposing direction of the first electrode and the second electrode. , and the short-side length Y in a direction perpendicular to the above-mentioned long-side direction, wherein the above-mentioned long-side length X is 1.5 times or more of the above-mentioned short-side length Y.
該電感器中,由於配線、第1電極及第2電極位於同一平面上,故可實現厚度方向之小型化。又,由於區域之長邊方向長度X為短邊方向長度Y之1.5倍值以上,故可實現區域之短邊方向之更進一步之小型化。 In this inductor, since the wiring, the first electrode, and the second electrode are located on the same plane, miniaturization in the thickness direction can be achieved. Furthermore, since the length X of the region in the longitudinal direction is at least 1.5 times the length Y in the shorter direction, further miniaturization of the region in the shorter direction can be achieved.
其結果,可實現電感器之小型化。 As a result, miniaturization of the inductor can be realized.
又,該電感器中,由於第1電極之平面面積S1及第2電極之平面面積S2分別為配線之寬度W之平方值(W2)以上,故可實現電感器之低電阻化。 In addition, in this inductor, since the planar area S1 of the first electrode and the planar area S2 of the second electrode are each equal to or greater than the square value (W 2 ) of the width W of the wiring, the resistance of the inductor can be reduced.
其結果,該電感器實現了小型化及低電阻化之兩者。 As a result, this inductor achieves both miniaturization and low resistance.
本發明(2)包含如技術方案1之電感器,其進而具備磁性層,該磁性層被覆上述配線之厚度方向一面。
The present invention (2) includes the inductor according to
該電感器由於進而具備被覆配線之厚度方向一面之磁性層,故可確保高電感。 Since this inductor further includes a magnetic layer covering one side in the thickness direction of the wiring, high inductance can be ensured.
本發明(3)包含如(2)之電感器,其中上述磁性層之厚度為500μm以下。 The present invention (3) includes the inductor according to (2), wherein the above-mentioned magnetic layer has a thickness of 500 μm or less.
該電感器中,磁性層之厚度為500μm以下。因此,可確保電感器之高電感,並且實現電感器之小型化。 In this inductor, the thickness of the magnetic layer is 500 μm or less. Therefore, high inductance of the inductor can be ensured, and miniaturization of the inductor can be achieved.
本發明(4)包含如(2)或(3)之電感器,其進而具備:第1凸塊,其配置於上述第1電極之厚度方向一面;及第2凸塊,其配置於上述第2電極之厚度方向一面。 The present invention (4) includes the inductor according to (2) or (3), which further includes: a first bump arranged on one side in the thickness direction of the first electrode; and a second bump arranged on the first electrode above. 2 One side of the electrode in the thickness direction.
該電感器由於具備第1凸塊與第2凸塊,故可容易地實現搭載電感器之電子機器、與第1電極及第2電極之電性連接。 Since the inductor includes the first bump and the second bump, electrical connection between the electronic device on which the inductor is mounted and the first electrode and the second electrode can be easily realized.
本發明(5)包含如(4)之電感器,其中上述第1凸塊之平面面積BS1相對於上述第1電極之平面面積S1之比率為70%以上,上述第2凸塊之平面面積BS2相對於上述第2電極之平面面積S2之比率為70%以上。 The present invention (5) includes the inductor as in (4), wherein the ratio of the planar area BS1 of the first bump to the planar area S1 of the first electrode is 70% or more, and the planar area BS2 of the second bump is The ratio to the planar area S2 of the second electrode is 70% or more.
該電感器中,由於第1凸塊之平面面積相對於第1電極之平面面積之比率為70%以上,且第2凸塊之平面面積相對於第2電極之平面面積之比率為70%以上,故可實現電感器之低電阻化,抑制電子機器與第1電極之電性連接可靠性之降低、及電子機器與第2電極之電性連接可靠性之降低。 In this inductor, since the ratio of the plane area of the first bump to the plane area of the first electrode is 70% or more, and the ratio of the plane area of the second bump to the plane area of the second electrode is 70% or more Therefore, the low resistance of the inductor can be realized, and the reduction in the reliability of the electrical connection between the electronic device and the first electrode and the reduction in the reliability of the electrical connection between the electronic device and the second electrode can be suppressed.
本發明(6)包含如(4)或(5)之電感器,其中上述第1凸塊及上述第2凸塊之厚度方向長度相對於上述磁性層之厚度而言較長。 The present invention (6) includes the inductor according to (4) or (5), wherein the length in the thickness direction of the first bump and the second bump is longer than the thickness of the magnetic layer.
該電感器中,由於第1凸塊及第2凸塊之厚度方向長度相對於磁性層之厚度而言較長,故可使電子機器、與第1電極及第2電極之電性 連接可靠性提高。 In this inductor, since the length in the thickness direction of the first bump and the second bump is longer than the thickness of the magnetic layer, it is possible to make the electrical connection between the electronic device and the first electrode and the second electrode Improved connection reliability.
本發明(7)包含如(4)至(6)中任一項之電感器,其中上述第1凸塊及上述第2凸塊與上述磁性層於面方向上隔開0.1μm以上之間隔而配置。 The present invention (7) includes the inductor according to any one of (4) to (6), wherein the first bump and the second bump are separated from the magnetic layer by an interval of 0.1 μm or more in the plane direction. configuration.
該電感器中,由於第1凸塊及第2凸塊與磁性層於面方向上隔開0.1μm以上之間隔而配置,故可有效地防止第1凸塊及第2凸塊、與磁性層之短路。因此,可使電子機器、與第1電極及第2電極之電性連接可靠性提高。 In this inductor, since the first bump and the second bump and the magnetic layer are arranged at a distance of 0.1 μm or more in the plane direction, it is possible to effectively prevent the first bump and the second bump from contacting the magnetic layer. short circuit. Therefore, the electrical connection reliability between the electronic device and the first electrode and the second electrode can be improved.
本發明(8)包含如(4)至(7)中任一項之電感器,其進而具備覆蓋絕緣層,該覆蓋絕緣層被覆上述第1凸塊及上述第2凸塊之周圍,且配置於上述配線、上述第1電極及上述第2電極之上述厚度方向一側。 The present invention (8) includes the inductor according to any one of (4) to (7), which further includes an insulating cover layer covering the surroundings of the first bump and the second bump, and is arranged On one side in the thickness direction of the wiring, the first electrode, and the second electrode.
該電感器由於具備覆蓋絕緣層,故可藉由覆蓋絕緣層而被覆(保護)第1電極、第2電極及配線,因此,可使電性連接可靠性提高。 Since the inductor is provided with a cover insulating layer, the first electrode, the second electrode, and the wiring can be covered (protected) by the cover insulating layer, so that the electrical connection reliability can be improved.
本發明(9)包含如(1)至(8)中任一項之電感器,其進而具備:基底絕緣層,其配置於上述配線之上述厚度方向另一面;及第2磁性層,其配置於上述基底絕緣層之上述厚度方向另一面。 The present invention (9) includes the inductor according to any one of (1) to (8), further comprising: an insulating base layer disposed on the other side of the wiring in the thickness direction; and a second magnetic layer disposed on on the other side in the thickness direction of the insulating base layer.
該電感器由於進而具備第2磁性層,故可確保高電感。 Since this inductor further includes a second magnetic layer, high inductance can be secured.
本發明(10)包含一種電感器之製造方法,其係用以製造如(2)至9中任一項之電感器之製造方法,且具備如下步驟:沿著上述面方向之一方向製作複數個包含1個上述配線、1個上述第1電極及1個上述第2電極之單元;以匯總被覆上述複數個單元中之上述複數個配線之上述厚度方向一面之方式,將於上述一方向上較長之長條之磁性薄片配置於上述複數個單元,自上述磁性薄片形成上述磁性層;及將上述磁性層沿著與上述一 方向交叉之方向切斷,將上述複數個單元單片化。 The present invention (10) includes a manufacturing method of an inductor, which is a manufacturing method for manufacturing an inductor according to any one of (2) to 9, and has the following steps: making a plurality of A unit including one of the above-mentioned wiring, one of the above-mentioned first electrode, and one of the above-mentioned second electrode; in the manner of collectively covering one side of the thickness direction of the above-mentioned plurality of wiring in the above-mentioned plurality of units, it will be compared in the above-mentioned one direction Long strips of magnetic thin sheets are arranged in the plurality of units, and the magnetic layer is formed from the magnetic thin sheet; Cutting in the direction where the directions intersect each other separates the plurality of units.
該製造方法以匯總被覆複數個單元中之複數個配線之厚度方向一面之方式,將於一方向上較長之長條之磁性薄片配置於複數個單元,將單元單片化,自磁性薄片形成磁性層,故可效率良好地製造複數個電感器。 In this manufacturing method, one side of the thickness direction of a plurality of wires covering a plurality of units is combined, and a long magnetic sheet that is longer in one direction is arranged in a plurality of units, and the unit is singulated to form a magnetic field from the magnetic sheet. layers, it is possible to efficiently manufacture a plurality of inductors.
本發明之電感器可實現小型化及低電阻化之兩者。 The inductor of the present invention can achieve both miniaturization and low resistance.
本發明之電感器之製造方法可效率良好地製造複數個電感器。 The method for manufacturing an inductor of the present invention can efficiently manufacture a plurality of inductors.
1:電感器 1: Inductor
2:基底層 2: Base layer
3:導體圖案 3: Conductor pattern
4:第1凸塊 4: 1st bump
5:第2凸塊 5: The second bump
6:覆蓋絕緣層 6: Cover the insulating layer
7:第2磁性層 7: The second magnetic layer
8:基底絕緣層 8: base insulating layer
9:配線 9: Wiring
10:磁性層 10: Magnetic layer
11:第1電極 11: 1st electrode
12:第2電極 12: 2nd electrode
13:直線部 13: Straight line
14:連結部 14: Connecting part
15:配線區域 15:Wiring area
16:導體層 16: Conductor layer
17:支持薄片 17: Support flakes
18:單元 18: unit
19:磁性薄片 19: Magnetic sheet
20:積層體 20: laminated body
21:連接構件 21: Connecting components
22:電感器集合體 22: Inductor aggregate
24:第1開口部 24: 1st opening
25:第2開口部 25: The second opening
BS1:第1凸塊之平面面積 BS1: Plane area of the first bump
BS2:第2凸塊之平面面積 BS2: Plane area of the second bump
IL0:假想最短線段 IL0: Imaginary shortest line segment
IL1:第1假想線段 IL1: The first imaginary line segment
IL2:第2假想線段 IL2: The second imaginary line segment
IL3:第3假想線段 IL3: The 3rd imaginary line segment
IL4:第4假想線段 IL4: The 4th imaginary line segment
IN:磁性層與第1凸塊及第2凸塊之間隔 IN: Space between the magnetic layer and the first and second bumps
L:沿著長邊方向(最短方向)之第1電極及第2電極間之長度 L: Length between the first electrode and the second electrode along the long side direction (shortest direction)
LS1:第1電極之長邊 LS1: Long side of the first electrode
LS2:第2電極之長邊 LS2: Long side of the second electrode
S1:第1電極之平面面積 S1: Plane area of the first electrode
S2:第2電極之平面面積 S2: Plane area of the second electrode
SP:間隔 SP: Interval
SS1:第1電極之短邊 SS1: The short side of the first electrode
SS2:第2電極之短邊 SS2: The short side of the second electrode
T1:第1凸塊及第2凸塊之厚度 T1: Thickness of the first bump and the second bump
T2:磁性層之厚度 T2: The thickness of the magnetic layer
W:寬度 W: width
W2:寬度之平方值 W 2 : the square value of the width
W3:寬度 W3: width
W4:寬度 W4: width
X:長邊方向長度 X: Length in the direction of the long side
Y:前後方向長度 Y: length in the front and back directions
圖1A及圖1B表示本發明之電感器之一實施形態,圖1A係省略覆蓋絕緣層之俯視圖,圖1B係省略第1凸塊、第2凸塊及覆蓋絕緣層之俯視圖。 1A and 1B show an embodiment of the inductor of the present invention. FIG. 1A is a plan view omitting the covering insulating layer, and FIG. 1B is a plan view omitting the first bump, the second bump and the covering insulating layer.
圖2表示沿著圖1A及圖1B之C-C線之剖視圖。 Fig. 2 shows a cross-sectional view along line C-C of Figs. 1A and 1B.
圖3A~圖3E係圖2所示之電感器之製造步驟之剖視圖,圖3A表示準備基底絕緣層及導體層之步驟,圖3B表示設置配線、第1電極及第2電極之步驟,圖3C表示設置磁性層及第2磁性層之步驟,圖3D表示設置第1凸塊及第2凸塊之步驟,圖3E表示設置覆蓋絕緣層之步驟。 3A to 3E are cross-sectional views of the manufacturing steps of the inductor shown in FIG. 2. FIG. 3A shows the steps of preparing the base insulating layer and the conductor layer. FIG. 3B shows the steps of setting wiring, the first electrode and the second electrode, and FIG. 3C It shows the step of providing the magnetic layer and the second magnetic layer, FIG. 3D shows the step of providing the first bump and the second bump, and FIG. 3E shows the step of providing the cover insulating layer.
圖4A~圖4D係圖2所示之電感器之製造步驟之立體圖,圖4A表示準備基底絕緣層及導體層之步驟,圖4B表示設置配線、第1電極及第2電極之步驟,圖4C表示設置磁性層及第2磁性層之步驟,圖4D表示設置第1凸塊及第2凸塊之步驟、設置覆蓋絕緣層之步驟、及將電感器集合體單片化之步驟。 4A to 4D are perspective views of the manufacturing steps of the inductor shown in FIG. 2. FIG. 4A shows the steps of preparing the base insulating layer and the conductor layer. FIG. 4B shows the steps of setting wiring, the first electrode and the second electrode, and FIG. 4C It shows the step of providing the magnetic layer and the second magnetic layer, and FIG. 4D shows the step of providing the first bump and the second bump, the step of providing the covering insulating layer, and the step of singulating the inductor assembly.
圖5表示圖1B所示之電感器之第1變化例之俯視圖。 FIG. 5 shows a top view of a first modification example of the inductor shown in FIG. 1B.
圖6及圖7表示圖1B所示之電感器之第3變化例之俯視圖。 6 and 7 show top views of a third modification example of the inductor shown in FIG. 1B.
圖7表示圖1B所示之電感器之第3變化例之俯視圖。 FIG. 7 shows a top view of a third modification example of the inductor shown in FIG. 1B.
圖8表示圖1B所示之電感器之第4變化例之俯視圖。 FIG. 8 shows a plan view of a fourth modification example of the inductor shown in FIG. 1B.
圖9表示圖2所示之電感器之第5變化例之剖視圖。 Fig. 9 is a sectional view showing a fifth modification of the inductor shown in Fig. 2 .
圖10表示圖2所示之電感器之第6變化例之剖視圖。 FIG. 10 shows a cross-sectional view of a sixth modification example of the inductor shown in FIG. 2 .
圖11表示圖2所示之電感器之第7變化例之剖視圖。 FIG. 11 shows a cross-sectional view of a seventh modification example of the inductor shown in FIG. 2 .
圖12表示圖2所示之電感器之第8變化例之剖視圖。 Fig. 12 is a cross-sectional view showing an eighth modification of the inductor shown in Fig. 2 .
圖13表示圖2所示之電感器之第9變化例之剖視圖。 Fig. 13 is a cross-sectional view showing a ninth modification of the inductor shown in Fig. 2 .
圖14表示圖2所示之電感器之第10變化例之剖視圖。 Fig. 14 is a cross-sectional view showing a tenth modification of the inductor shown in Fig. 2 .
圖15係比較例1之電感器之俯視圖,其表示省略第1凸塊、第2凸塊及覆蓋絕緣層之俯視圖。 15 is a plan view of the inductor of Comparative Example 1, which shows a plan view in which the first bump, the second bump and the insulating cover layer are omitted.
圖16表示圖8所示之電感器之第4變化例之進一步之變化例之俯視圖。 FIG. 16 shows a plan view of a further modification of the fourth modification of the inductor shown in FIG. 8 .
參照圖1A~圖2說明本發明之電感器之一實施形態。 One embodiment of the inductor of the present invention will be described with reference to FIGS. 1A to 2 .
於圖1A及圖1B中,紙面左右方向表示電感器之長邊方向。圖1A及圖1B之左側為長邊方向一側,圖1A及圖1B之右側為長邊方向另一側。 In FIG. 1A and FIG. 1B , the left-right direction on the paper surface represents the long-side direction of the inductor. The left side in FIG. 1A and FIG. 1B is one side in the longitudinal direction, and the right side in FIG. 1A and FIG. 1B is the other side in the longitudinal direction.
於圖1A及圖1B中,上下方向表示前後方向(電感器之短邊方向)。圖1A及圖1B之下側為前側(短邊方向一側),圖1A及圖1B之上側為後側(短邊方向另一側)。 In FIG. 1A and FIG. 1B , the up-down direction represents the front-back direction (the short-side direction of the inductor). The lower side in FIGS. 1A and 1B is the front side (one side in the short-side direction), and the upper side in FIGS. 1A and 1B is the rear side (the other side in the short-side direction).
於圖1A及圖1B中,紙面紙厚方向表示電感器之厚度方向。圖1A及圖1B之紙面近前側為上側(厚度方向一側),圖1A及圖1B之紙面裏側為下側(厚度方向另一側)。 In FIG. 1A and FIG. 1B , the paper thickness direction represents the thickness direction of the inductor. The front side of the paper in Fig. 1A and Fig. 1B is the upper side (one side in the thickness direction), and the back side of the paper in Fig. 1A and Fig. 1B is the lower side (the other side in the thickness direction).
於圖1A之俯視圖中,為了明確表示第1電極11、第2電極12及配線9(配線區域15)(下述)之俯視(與於厚度方向上投影時含義相同)下之相對配置,省略覆蓋絕緣層6(下述)。
In the top view of FIG. 1A , in order to clearly show the relative arrangement of the
於圖1B之俯視圖中,為了明確表示第1電極11、第2電極12及配線9(配線區域15)(下述)之俯視(與於厚度方向上投影時含義相同)下之相對配置,省略第1凸塊4、第2凸塊5及覆蓋絕緣層6(下述),以虛線表示磁性層10(下述)。
In the top view of FIG. 1B , in order to clearly show the relative arrangement of the
電感器1具有於長邊方向上延伸之大致矩形薄片形狀。電感器1具備基底層2、導體圖案3、第1凸塊4及第2凸塊5、磁性層10、以及覆蓋絕緣層6。
The
基底層2具有與電感器1相同之外形形狀之薄片形狀。基底層2朝向厚度方向上側依序具備第2磁性層7、及基底絕緣層8。
The
第2磁性層7係對電感器1賦予較高之電感之層。第2磁性層7具有薄片形狀,該薄片形狀具有沿著長邊方向及前後方向之平坦之上表面及下表面。第2磁性層7係電感器1之最下層。又,第2磁性層7亦為基底層2之下層。第2磁性層7之材料例如可列舉日本專利特開2014-189015號公報等所揭示之磁性組合物(具體而言,硬化磁性組合物)等。第2磁性層7之厚度例如為10μm以上,較佳為50μm以上,又,例如為500μm以下,較佳為300μm以下。
The second
基底絕緣層8配置於第2磁性層7之上表面整面。基底絕緣
層8為基底層2之上層。基底絕緣層8具有沿著長邊方向及前後方向之平坦之上表面及下表面。基底絕緣層8之上表面形成基底層2之上表面。又,基底絕緣層8之上表面亦為用以將下文說明之導體圖案3配置於同一平面上之平面。基底絕緣層8之材料可列舉例如玻璃、陶瓷等無機材料、例如聚醯亞胺、氟樹脂等有機材料、例如其等之複合材料(玻璃環氧樹脂)等絕緣材料。基底絕緣層8之厚度例如為0.1μm以上,較佳為0.5μm以上,又,例如為15μm以下,較佳為10μm以下。
The insulating
基底層2之厚度為第2磁性層7之厚度及基底絕緣層8之厚度之總和,例如為10.1μm以上,較佳為50.5μm以上,又,例如為515μm以下,較佳為310μm以下。
The thickness of the
導體圖案3配置於基底層2之上表面。導體圖案3係連續具備第1電極11、第2電極12、及配線9之電極圖案。
The
第1電極11配置於基底絕緣層8之上表面。具體而言,第1電極11位於基底絕緣層8之上表面之長邊方向一端部(圖1A及圖1B之左端部)。又,第1電極11為導體圖案3之長邊方向一端部。
The
第1電極11具有於短邊方向(前後方向)上延伸之俯視大致矩形狀。
The
第2電極12配置於基底絕緣層8之上表面。具體而言,第2電極12於基底絕緣層8之上表面,相對於第1電極11隔開間隔地對向配置於長邊方向另一側(圖1A及圖1B之右側)。詳細而言,第2電極12位於基底絕緣層8之上表面之長邊方向另一端部(圖1A及圖1B之右端部)。又,第2電極12為導體圖案3之長邊方向另一端部。
The
第2電極12具有與第1電極11相同之形狀。亦即,第2電極12具有於短邊方向(前後方向)上延伸之俯視大致矩形狀。第1電極11及第2電極12形成
1對電極。
The
第1電極11及第2電極12之對向方向係沿著將第1電極11及第2電極12以最短距離連結之假想最短線段IL0(參照圖1A)之方向(最短方向)。最短方向與電感器1之長邊方向相同。假想最短線段IL0之長度為第1電極11及第2電極12間之最短距離(長度L)。
The opposing direction of the
配線9配置於作為區域之一例之配線區域15。
The
配線區域15係位於第1電極11及第2電極12間之區域,具體而言,具有:沿著電感器1之長邊方向之與第1電極11及第2電極12間之長度L相等之長邊方向長度X、及相對於長邊方向正交之方向上之作為短邊方向長度之一例之前後方向長度Y。「第1電極11及第2電極12間之長度L」將於下文詳細敍述。
The
配線區域15係電感器1之長邊方向之沿著第1電極11之長邊方向另一端緣(右端緣,靠近第2電極12之側之端緣)之第1假想線段IL1、與沿著第2電極12之長邊方向一端緣(左端緣,靠近第1電極11之側之端緣)之第2假想線段IL2之間的區域,且係沿著配線9之前端緣之第3假想線段IL3、與沿著配線9之後端緣之第4假想線段IL4之間的區域。再者,於該一實施形態中,第3假想線段IL3沿著第1電極11及第2電極12各自之前端緣,第4假想線段IL4沿著第1電極11及第2電極12各自之後端緣。第1假想線段IL1及第2假想線段IL2平行,又,第3假想線段IL3及第4假想線段IL4平行,由第1假想線段IL1、第2假想線段IL2、第3假想線段IL3及第4假想線段IL4區隔出之俯視大致矩形狀之區域係配線區域15。如此一來,配線區域15之平面面積由配線區域15之長邊方向長度X及前後方向長度Y之積(XY)表示。
The
配線9以與第1電極11及第2電極12連續之方式配置於配線區域15內。配線9具有寬度W,且於配線區域15內具有俯視大致曲折形狀。配線9之兩端部與第1電極11及第2電極12之各者連續。具體而言,配線9連續地具有複數個直線部13、及將相互鄰接之2個直線部13之長邊方向一端部間彼此或兩端部間彼此連結之複數個連結部14。複數個直線部13於前後方向上彼此隔開間隔而配置。複數個直線部13之各者具有沿著長邊方向延伸之形狀。複數個直線部13中,例如,位於後端部之直線部13與第1電極11之後端部連續,位於前端部之直線部13與第2電極12之前端部連續。複數個連結部14之各者相對於複數個直線部13之各者而言較短。複數個連結部14於配線區域15內,交替配置於第1電極11之附近、及第2電極12之附近。
The
又,第1電極11、第2電極12及配線9位於同一平面上。第1電極11、第2電極12及配線9於長邊方向上投影時重疊,更具體而言,為一致。又,根據圖2可知,於上述投影時,第1電極11、第2電極12及配線9各自之上表面及下表面亦重疊,更具體而言,為一致。
In addition, the
導體圖案3中之配線9、第1電極11及第2電極12包含相同材料。導體圖案3之材料例如可列舉日本專利特開2014-189015號公報所揭示之導體,較佳為可列舉銅等金屬。
The
導體圖案3之厚度例如為5μm以上,較佳為10μm以上,又,例如為300μm以下,較佳為100μm以下。
The thickness of the
導體圖案3之俯視下之尺寸等將於下文詳細敍述。
The dimensions and the like of the
第1凸塊4係用於第1電極11與連接構件21(參照下述圖2之假想線)之電性連接之接點。第1凸塊4配置於第1電極11之上表面。具體而
言,第1凸塊4具有於前後方向及厚度方向上延伸之大致矩形箱(板)形狀。第1凸塊4具有與第1電極11大致相似之形狀。第1凸塊4之下表面與第1電極11之上表面之中央部接觸,另一方面,第1凸塊4之上表面於上側露出。再者,第1電極11之周端部自第1凸塊4露出。第1凸塊4之側面(長邊方向兩側面及前後兩面)由下述覆蓋絕緣層6被覆。第1凸塊4由於與第1電極11之上表面接觸,故亦為第1電極柱。作為第1凸塊4之材料,可列舉上述導體(包含焊料)。
The
第1凸塊4之平面面積BS1相對於第1電極11之平面面積S1(下述)之比率(BS1/S1)例如為70%以上,較佳為80%以上,更佳為90%以上,又,例如為100%以下。若BS1/S1為上述下限以上,則可實現第1凸塊4及第1電極11之低電阻化,抑制電子機器(未圖示)與第1電極11之電性連接可靠性之降低。
The ratio (BS1/S1) of the planar area BS1 of the
第2凸塊5係用於第2電極12與連接構件21(參照下述圖2之假想線)之電性連接之接點。第2凸塊5配置於第2電極12之上表面。具體而言,第2凸塊5具有於前後方向及厚度方向上延伸之大致矩形箱(板)形狀。第2凸塊5具有與第2電極12大致相似之形狀。第2凸塊5之下表面與第2電極12之上表面之中央部接觸,另一方面,第2凸塊5之上表面於上側露出。再者,第2電極12之周端部自第2凸塊5露出。第2凸塊5之側面(長邊方向兩側面及前後兩面)由下述覆蓋絕緣層6被覆。第2凸塊5由於與第2電極12之上表面接觸,故亦為第2電極柱。第2凸塊5之材料與第1凸塊4之材料相同。
The
第2凸塊5之平面面積BS2相對於第2電極12之平面面積S2(下述)之比率(BS2/S2)例如為70%以上,較佳為80%以上,更佳為90%
以上,又,例如為100%以下。若BS2/S2為上述下限以上,則可實現第2凸塊5及第2電極12之低電阻化,抑制電子機器(未圖示)與第2電極12之電性連接可靠性之降低。
The ratio (BS2/S2) of the planar area BS2 of the
第1凸塊4之厚度T1及第2凸塊5之厚度T1彼此相同,例如為15μm以上,較佳為50μm以上,又,例如為600μm以下,較佳為500μm以下。再者,第1凸塊4之厚度T1為自第1電極11(導體圖案3)之上表面至第1凸塊4之上表面之距離。第2凸塊5之厚度T1為自第2電極12(導體圖案3)之上表面至第2凸塊5之上表面之距離。
The thickness T1 of the
磁性層10係於電感器1中賦予高電感之層。磁性層10具有於電感器1之長邊方向及短邊方向上延伸之大致薄片形狀。磁性層10於基底絕緣層8上被覆配線9。因此,磁性層10具備與配線9之形狀對應之下表面、及與下表面之上側對向之平坦之上表面。另一方面,磁性層10於電感器1之長邊方向上,隔開間隔地位於第1電極11及第2電極12之內側,且未被覆第1電極11及第2電極12。
The
亦即,磁性層10之長邊方向一端緣相對於第1凸塊4之長邊方向另一端緣隔開微小之間隔而位於長邊方向另一側,磁性層10之長邊方向另一端緣相對於第2凸塊5之長邊方向一端緣隔開微小間隔而位於長邊方向一側。具體而言,磁性層10相對於第1凸塊4及第2凸塊5,於長邊方向上隔開例如0.1μm以上、較佳為0.3μm以上、更佳為0.5μm以上之間隔IN且例如10μm以下之間隔IN。
That is, one end edge in the longitudinal direction of the
若上述間隔IN為上述下限以上,則可有效地防止第1凸塊4及第2凸塊5、與磁性層10之短路。
If the said interval IN is more than the said minimum, the short circuit of the
又,磁性層10之前後兩端緣於厚度方向上投影時,與基底
層2之前後兩端緣一致。
Also, when the front and rear ends of the
磁性層10之厚度T2例如相對於第1凸塊4及第2凸塊5之厚度T1而言較短。換言之,第1凸塊4及第2凸塊5之厚度T1相對於磁性層10之厚度T2而言較長。
The thickness T2 of the
具體而言,磁性層10之厚度T2相對於第1凸塊4及第2凸塊5之厚度T1例如為99%以下,較佳為97%以下,更佳為95%以下,又,例如為70%以上。
Specifically, the thickness T2 of the
詳細而言,磁性層10之厚度T2例如為500μm以下,較佳為300μm以下,更佳為100μm以下,又,例如為10μm以上。
Specifically, the thickness T2 of the
若磁性層10之厚度T2為上述上限以下,則可實現電感器1之小型化。
If the thickness T2 of the
再者,磁性層10之厚度T2係自配線9(導體圖案3)之上表面至磁性層10之上表面之距離。
Furthermore, the thickness T2 of the
若第1凸塊4及第2凸塊5之厚度T1相對於磁性層10之厚度T2而言較長,則連接構件21(下述)與第1凸塊4及第2凸塊5之上表面接觸時,連接構件21不易與磁性層10接觸,因此,可使電子機器(未圖示)與第1電極11及第2電極12之電性連接可靠性提高。
If the thickness T1 of the
磁性層10之材料與第2磁性層7之材料相同。
The material of the
覆蓋絕緣層6係保護第1電極11、第2電極12及配線9之保護絕緣層。覆蓋絕緣層6於基底絕緣層8之上,被覆第1電極11、第1凸塊4、第2電極12、及第2凸塊5之周圍,並且被覆磁性層10整體。具體而言,覆蓋絕緣層6被覆第1凸塊4之側面、第2凸塊5之側面、第1電極11之上表面之周端部及側面、以及第2電極12之上表面之周端部及側面。又,覆蓋絕緣層6被覆磁性層10之側面及上表面。進而,覆蓋絕緣層6亦被覆基底絕
緣層8之上表面中除形成有第1電極11及第2電極12、與磁性層10之部分以外之部分。因此,覆蓋絕緣層6具有與第1電極11及第2電極12和磁性層10對應之下表面、及與下表面之上側對向之平坦之上表面。又,覆蓋絕緣層6之上表面與第1凸塊4及第2凸塊5之上表面為同一平面。亦即,覆蓋絕緣層6之上表面與第1凸塊4及第2凸塊5之上表面形成1個平面。又,覆蓋絕緣層6之周端緣於厚度方向上投影時,與基底層2之周端緣一致。
The
覆蓋絕緣層6之材料與基底絕緣層8之材料相同。覆蓋絕緣層6之厚度例如為120μm以下,較佳為100μm以下,又,例如為0.1μm以上,較佳為0.3μm以上。
The material of the covering insulating
其次,將第1電極11及第2電極12間之長度L、與配線區域15之長邊方向長度X之關係與本發明之範圍外之比較例1加以對比而詳細敍述。
Next, the relationship between the length L between the
如圖1A及圖1B所示,於一實施形態中,第1電極11及第2電極12間之長度L、與配線區域15之長邊方向長度X相等。
As shown in FIGS. 1A and 1B , in one embodiment, the length L between the
又,如圖5所示,於處於本發明之範圍內之第1變化例中,將於下文詳細敍述,將第1電極11及第2電極12於長邊方向上投影時,一部分重疊,將第1電極11及第2電極12以最短之距離連結之假想最短線段IL0之長度、即第1電極11及第2電極12間之長度L與配線區域15之長邊方向長度X相等。
Also, as shown in FIG. 5 , in the first modification within the scope of the present invention, which will be described in detail below, when the
相對於該等,如圖15所示,於比較例1中,將第1電極11及第2電極12於長邊方向上投影時不重疊(偏移),而且,假想最短線段IL0、即第1電極11及第2電極12間之長度L與配線區域15之長邊方向長度X相比較長。亦即,第1電極11及第2電極12間之長度L、與配線區域15之長方向
長度X不同。因此,比較例1為本發明之範圍外。
On the other hand, as shown in FIG. 15 , in Comparative Example 1, the
其次,如圖1A及圖1B所示,詳細敍述導體圖案3之俯視下之尺寸。
Next, as shown in FIG. 1A and FIG. 1B , the dimension of the
配線9之寬度W之平均值例如為500μm以下,較佳為100μm以下,又,例如為10μm以上,較佳為50μm以上。又,鄰接之直線部13間之間隔SP與上述寬度W相同。又,配線9之數量並未特別限定,例如為1以上,較佳為3以上,又,例如為1000以下,較佳為100以下。
The average value of the width W of the
第1電極11之平面面積S1及第2電極12之平面面積S2分別為配線9之寬度W之平方值(W2)以上,詳細而言,相對於平方值(W2)之比率(S1/W2、或S2/W2)超過1,較佳為2以上,更佳為3以上,進而較佳為4以上,特佳為5以上,又,例如為100以下。
The planar area S1 of the
若第1電極11之平面面積S1及第2電極12之平面面積S2分別不足配線9之寬度W之平方值(W2),則無法實現電感器1之低電阻化。換言之,若第1電極11之平面面積S1及第2電極12之平面面積S2分別為配線9之寬度W之平方值(W2)以上,則可實現電感器1之低電阻化。
If the planar area S1 of the
再者,由於第1電極11為矩形狀,故第1電極11之平面面積S1可根據電感器1之長邊方向之第1電極11之長度(短邊)SS1、與前後方向之第1電極11之長度(長邊)LS1而求出,具體而言,為SS1×LS1。
Furthermore, since the
由於第2電極12為矩形狀,故第2電極12之平面面積S2可根據電感器1之長邊方向之第2電極12之長度(短邊)SS2、與前後方向之第2電極12之長度(長邊)LS2而求出,具體而言,為SS2×LS2。
Since the
具體而言,第1電極11之平面面積S1及第2電極12之平面面積S2例如為10,000μm2以上,較佳為超過20,000μm2,更佳為超過25,000
μm2,又,例如為100,000μm2以下,較佳為50,000μm2以下。
Specifically, the plane area S1 of the
第1電極11之長邊LS1相對於配線9之寬度W之比(LS1/W)例如為1以上,較佳為2以上,更佳為4以上,又,例如為50以下。第1電極11之短邊SS1對應於上述之平面面積S1及長邊LS1而適當設定。
The ratio (LS1/W) of the long side LS1 of the
第2電極12之長邊LS2相對於配線9之寬度W之比(LS2/W)與上述比(LS1/W)相同。第2電極12之短邊SS2對應於上述之平面面積S2及長邊LS2而適當設定。
The ratio (LS2/W) of the long side LS2 of the
又,配線區域15之長邊方向長度X為短邊方向長度Y之1.5倍值以上。
Also, the length X in the longitudinal direction of the
亦即,滿足下式(1)。 That is, the following formula (1) is satisfied.
X/Y≧1.5 (1) X/Y≧1.5 (1)
較佳為滿足下式(2)。 It is preferable to satisfy the following formula (2).
X/Y≧2.0 (2) X/Y≧2.0 (2)
若X/Y低於上述下限(式(1)中為1.5,式(2)中為2.0),則無法實現第2凸塊5之前後方向之更進一步之小型化。換言之,若X/Y為上述下限以上,則可實現第2凸塊5之前後方向之更進一步之小型化,其結果,可實現電感器1之小型化。
If X/Y is lower than the above-mentioned lower limit (1.5 in formula (1), 2.0 in formula (2)), further miniaturization in the front-back direction of the
其次,參照圖3A~圖3E及圖4A~圖4D說明電感器1之製造方法。
Next, the manufacturing method of the
如圖3A及圖4A所示,於該方法中,首先,準備基底絕緣層8及導體層16。
As shown in FIGS. 3A and 4A , in this method, first, the insulating
基底絕緣層8以於最終獲得之電感器1之前後方向(短邊方向)上較長之長條薄片的形式來準備。另一方面,基底絕緣層8具有與電感
器1之長邊方向長度相同長度之寬度W3。
The insulating
導體層16係設置於基底絕緣層8之上表面整面之導體薄片。導體層16之材料與導體圖案3之材料相同。
The
又,可以利用支持薄片17自下側支持之狀態來準備基底絕緣層8及導體層16。支持薄片17係包含樹脂或金屬之隔離件。
In addition, the insulating
亦即,準備朝向厚度方向上側依序具備支持薄片17、第2磁性層7及導體層16之積層體20。
That is, the
如圖3B及圖4B所示,其次,自導體層16形成導體圖案3。例如,藉由包含蝕刻之減成法等形成具有第1電極11、第2電極12及配線9之導體圖案3。具體而言,沿著前後方向(基底絕緣層8之長條方向)製作複數個包含1個第1電極11、1個第2電極12、及1個配線9之單元18。
As shown in FIGS. 3B and 4B , next, the
如圖3C及圖4C所示,其次,將磁性層10以被覆配線9之方式設置於基底絕緣層8之上。
As shown in FIG. 3C and FIG. 4C , next, the
為了設置磁性層10,首先,如圖3B之上側圖及圖4B之上側圖所示,準備於前後方向上較長之具有長條薄片形狀之磁性薄片19。
To provide the
磁性薄片19之寬度W4與複數個磁性層10之長邊方向長度相同。磁性薄片19之材料例如可列舉日本專利申請特開2014-189015號公報所揭示之硬化性磁性組合物等。磁性薄片19之厚度可根據所獲得之磁性層10之厚度而適當設定。
The width W4 of the
繼而,如圖3B之箭頭及圖4B之箭頭所示,將磁性薄片19以匯總被覆複數個單元18中之複數個配線9之上表面及側面之方式配置於複數個單元18。具體而言,將長條之1個磁性薄片19對複數個單元18進行按壓(下壓)。如圖3C及圖4C所示,其後或與按壓同時地,視需要使磁性
薄片19硬化,而形成於前後方向上連續之磁性層10。
Next, as shown by the arrows in FIG. 3B and FIG. 4B , the
同時,於基底絕緣層8之下表面設置第2磁性層7。為了設置第2磁性層7,首先,將圖3B所示之支持薄片17自基底絕緣層8之下表面剝離(亦即,自積層體20去除支持薄片17),繼而,利用另一磁性薄片19形成第2磁性層7。
At the same time, the second
如圖3D及圖4D所示,繼而,設置第1凸塊4及第2凸塊5。具體而言,例如根據加成法、減成法等圖案形成法,於第1電極11及第2電極12之上表面形成複數個第1凸塊4及複數個第2凸塊5。
As shown in FIGS. 3D and 4D ,
其後,以上述圖案設置覆蓋絕緣層6。
Thereafter, the
如圖4D之假想線所示,藉此,匯總製造複數個電感器集合體22,該電感器集合體22具備1個基底層2、複數個單元18(參照圖4C)、複數個第1凸塊4及複數個第2凸塊5、1個磁性層10、及1個覆蓋絕緣層6。
As shown by the imaginary line in FIG. 4D, thereby, a plurality of inductor aggregates 22 are collectively manufactured, and the inductor aggregates 22 include a
其後,如圖4D之粗假想線所示,於電感器集合體22中,以將複數個單元18、複數個第1凸塊4及複數個第2凸塊5單片化之方式,將長條狀之覆蓋絕緣層6(參照圖3E)、長條狀之磁性層10、及長條狀之基底層2(基底絕緣層8及第2磁性層7)沿著電感器1之厚度方向(與前後方向正交之方向)切斷。
Thereafter, as shown by the thick imaginary line in FIG. 4D , in the
藉此,製造具備1個基底層2、1個導體圖案3、1個第1凸塊4及1個第2凸塊5、1個磁性層10、以及1個覆蓋絕緣層6之電感器1。較佳為電感器1僅由基底層2、導體圖案3、第1凸塊4及第2凸塊5、磁性層10、以及覆蓋絕緣層6構成。
In this way, an
電感器1並非下述電子機器,而是電子機器之一零件、即用以製作電子機器之零件,不包含電子元件(晶片、電容器等)、或安裝電
子元件之安裝基板,以零件個體之形式流通,且係產業上可利用之器件。
該電感器1例如搭載(組裝)於電子機器等。雖未圖示,但電子機器具備安裝基板、及安裝於安裝基板之電子元件(晶片、電容器等)。而且,於電子機器中,電感器1安裝於安裝基板。
This
具體而言,如圖2之假想線所示,導線或焊料等連接構件21與第1凸塊4及第2凸塊5之上表面接觸。電感器1經由連接構件21而安裝於安裝基板,且與其他電子機器電性連接,作為被動元件發揮作用。
Specifically, as shown by phantom lines in FIG. 2 ,
而且,該電感器1中,配線9、第1電極11及第2電極12位於同一平面上,故可實現厚度方向之小型化。又,配線區域15之長邊方向長度X為前後方向長度Y之1.5倍值以上,故可實現配線區域15之前後方向之小型化。其結果,可實現電感器1之更進一步之小型化。
Furthermore, in this
又,該電感器1中,第1電極11之平面面積S1及第2電極12之平面面積S2分別為配線9之寬度W之平方值(W2)以上,故可實現電感器1之低電阻化。
In addition, in this
該電感器1進而具備磁性層10,故可確保高電感。
Since this
該電感器1中,可確保電感器1之高電感,並且若磁性層10之厚度T2為500μm以下,則可實現電感器1之小型化。
In this
該電感器1具備第1凸塊4與第2凸塊5,故若使連接構件21與第1電極11及第2電極12之上表面接觸,則可容易地實現搭載電感器1之電子機器(未圖示)、與第1電極11及第2電極12之電性連接。
Since the
該電感器1中,若第1凸塊4之平面面積BS1相對於第1電極11之平面面積S1之比率為70%以上,且第2凸塊5之平面面積BS2相對於第2電極12之平面面積S2之比率為70%以上,則可實現電感器1之低電阻
化,抑制電子機器(未圖示)、與第1電極11及第2電極12之電性連接可靠性之降低。
In the
該電感器1中,若第1凸塊4及第2凸塊5之厚度方向長度T1相對於磁性層10之厚度T2而言較長,則於連接構件21與第1凸塊4及第2凸塊5之上表面接觸時,連接構件21不易與磁性層10接觸,因此,可抑制因連接構件21接觸於磁性層10所導致之短路,而使電子機器(未圖示)、與第1電極11及第2電極12之電性連接可靠性提高。
In this
該電感器1中,若第1凸塊4及第2凸塊5與磁性層10於面方向上隔開100μm以上之間隔IN而配置,則可有效地防止第1凸塊4及第2凸塊5、與磁性層10之短路。因此,可使電子機器(未圖示)、與第1電極11及第2電極12之電性連接可靠性提高。
In this
該電感器1具備覆蓋絕緣層6,故可藉由覆蓋絕緣層6而被覆(保護)第1電極11、第2電極12及配線9,因此,可使電性連接可靠性提高。
Since the
該電感器1除了具備磁性層10以外,進而具備第2磁性層7,故可確保高電感。
Since the
該電感器1之製造方法中,以匯總被覆複數個單元中之複數個配線9之上表面之方式,將於前後方向上較長之長條之磁性薄片19配置於複數個單元18,自磁性薄片19形成磁性層10。亦即,製造包含複數個電感器1之電感器集合體22。其後,將電感器集合體22單片化,製造複數個電感器1。其結果,可效率良好地製造複數個電感器1。
In the manufacturing method of the
於以下各變化例中,對於與上述一實施形態相同之構件及步驟,標 註相同之參照符號,並省略其詳細說明。又,可將各變化例適當組合。進而,各變化例除了特別記載以外,可發揮與一實施形態相同之作用效果。 In each of the following variations, for the same components and steps as those in the above-mentioned embodiment, mark Note the same reference symbols and omit their detailed description. In addition, each modification example can be combined suitably. Furthermore, each modification example can exhibit the same operation and effect as that of the one embodiment, unless otherwise stated.
又,於圖5~圖8之俯視圖中,為了明確表示第1電極11、第2電極12及配線9(配線區域15)之相對配置,省略第1凸塊、第2凸塊及覆蓋絕緣層。
In addition, in the top views of FIGS. 5 to 8 , in order to clearly show the relative arrangement of the
第1變化例
如圖5所示,於電感器1中,將第1電極11及第2電極12於長邊方向上投影時,一部分重疊。具體而言,第1電極11於長邊方向上投影時,與配線區域15之後側部分及前後方向中央部重疊。第2電極12於長邊方向上投影時,與配線區域15之前側部分及前後方向中央部重疊。因此,於長邊方向上投影時,第1電極11之前端部、第2電極12之後端部、及配線區域15之前後方向中央部重疊。
As shown in FIG. 5 , in the
又,第1電極11之前端部與第2電極12之後端部於長邊方向上對向。因此,將第1電極11及第2電極12以最短距離連結之假想最短線段IL0為沿著長邊方向之線段,與第1實施形態同樣地,假想最短線段IL0之長度、即第1電極11及第2電極12間之長度L與配線區域15之長邊方向長度X相等。
In addition, the front end of the
第2變化例
配線9之圖案形狀並不限定於上述。如圖6所示,於第2變化例中,複數個直線部13於長邊方向上彼此隔開間隔而配置。複數個直線部13分別於前後方向上延伸。
The pattern shape of the
第3變化例
如圖7所示,於第3變化例中,配線9僅具有1個連結部14。連結部14
位於長邊方向中央部,將前側之直線部13之長邊方向一端緣、與後側之直線部13之長邊方向端部於前後方向連結。第3變化例中,連結部14之長度可與直線部13之長度相同,亦可較直線部13長。
As shown in FIG. 7 , in the third modification example, the
第4變化例
如圖8所示,於第4變化例中,複數個直線部13於隨著朝向前側而朝長邊方向一側傾斜之第1傾斜方向上,彼此隔開間隔而配置。複數個直線部13分別具有沿著與第1傾斜方向正交之方向(隨著朝向前側而朝長邊方向另一側傾斜之第2傾斜方向)延伸之形狀。
As shown in FIG. 8 , in the fourth modification, the plurality of
連結部14例如可具有俯視彎曲形狀。
The connecting
第5變化例
如圖9所示,電感器1不具備第2磁性層7(參照圖2)。基底層2不包含第2磁性層7,而僅由基底絕緣層8構成。基底絕緣層8為電感器1之最下層。
As shown in FIG. 9 , the
第6變化例
如圖10所示,電感器1不具備基底絕緣層8(參照圖2)。基底層2不包含基底絕緣層8,而僅由第2磁性層7構成。第2磁性層7之上表面係用以將導體圖案3配置於同一平面上之平面。亦即,於第2磁性層7之上表面,配置有導體圖案3。
As shown in FIG. 10 , the
第7變化例
如圖11所示,磁性層10亦被覆第1電極11之周端部及第2電極12之周端部。於第7變化例中,磁性層10亦相對於第1凸塊4及第2凸塊5於長邊方向上隔開上述間隔IN。
As shown in FIG. 11 , the
第8變化例
如圖12所示,第1凸塊4及第2凸塊5之各者相對於第1電極11及第2電極12之各者配置於下側。第1凸塊4及第2凸塊5之各者與第1電極11及第2電極12之下表面接觸。
As shown in FIG. 12 , each of the
覆蓋絕緣層6配置於基底絕緣層8之下。覆蓋絕緣層6被覆第1凸塊4及第2凸塊5之側面、與第2磁性層7之下表面及側面。
The insulating
覆蓋絕緣層6於俯視下較基底絕緣層8小。
The covering insulating
第1凸塊4及第2凸塊5分別於厚度方向上貫通基底絕緣層8及覆蓋絕緣層6,且其下表面與覆蓋絕緣層6之下表面成為同一平面。
The
第2磁性層7相對於第1凸塊4及第2凸塊5於長邊方向上隔開間隔IN。
The second
第9變化例
如圖13所示,第1凸塊4及第2凸塊5分別與第1電極11及第2電極12之下表面接觸,且第2磁性層7亦被覆第1凸塊4及第2凸塊5之周端部。於第9變化例中,第2磁性層7亦相對於第1凸塊4及第2凸塊5於長邊方向上隔開上述間隔IN。
As shown in Figure 13, the
第10變化例
如圖14所示,電感器1不具備第1凸塊4及第2凸塊5(參照圖2)。亦即,電感器1僅由基底層2、導體圖案3、磁性層10、及覆蓋絕緣層6構成。
As shown in FIG. 14 , the
覆蓋絕緣層6具有使第1電極11及第2電極12各自之上表面之中央部露出之第1開口部24及第2開口部25。
The insulating
連接構件21經由第1開口部24及第2開口部25之各者而與第1電極11及第2電極12各自之上表面接觸。
The
其他變化例 Other Variations
於一實施形態中,劃定配線區域15之第3假想線段IL3與第4假想線段IL4沿著第1電極11及第2電極12各自之前端緣與後端緣,但例如,如圖16所示,作為第4變化例之進一步之變化例,亦可為第3假想線段IL3位於較第1電極11及第2電極12之前端緣更靠前側,且第4假想線段IL4位於較第1電極11及第2電極12之後端緣更靠後側。
In one embodiment, the third imaginary line segment IL3 and the fourth imaginary line segment IL4 defining the
於一實施形態中,以減成法形成導體圖案3,雖未圖示,但亦可不準備導體層16,而是以使用種膜之加成法於基底絕緣層8之上表面形成導體圖案3。
In one embodiment, the
又,電感器1亦可以卷對卷法及單片法之任一方法而製造。
In addition, the
於一實施形態中,如圖3D所示,設置第1凸塊4及第2凸塊5,其後,如圖3E所示,設置覆蓋絕緣層6。然而,雖未圖示,但亦可首先以具有第1開口部24及第2開口部25之圖案設置覆蓋絕緣層6,其後設置第1凸塊4及第2凸塊5。
In one embodiment, as shown in FIG. 3D , the
以下表示實施例及比較例,更具體地說明本發明。再者,本發明不受實施例及比較例之任何限定。以下記載中使用之調配比率(含有比率)、物性值、參數等具體數值可代替上述「實施方式」中記載之對應於其等之調配比率(含有比率)、物性值、參數等該記載之上限值(定義為「以下」、「未達」之數值)或下限值(定義為「以上」、「超過」之數值)。 Examples and comparative examples are shown below to more specifically describe the present invention. In addition, this invention is not limited at all by an Example and a comparative example. Specific numerical values such as compounding ratios (content ratios), physical property values, and parameters used in the following descriptions can replace the corresponding compounding ratios (content ratios), physical property values, parameters, etc. described in the above-mentioned "embodiments" Limit value (defined as "below", "less than" value) or lower limit value (defined as "above", "exceeded" value).
實施例1 Example 1
根據上述製造方法製造圖1A~圖2所示之一實施形態之電感器1。電感器1具備第2磁性層7、基底絕緣層8、導體圖案3、第1凸塊4及第2凸塊5、磁性層10、以及覆蓋絕緣層6。
The
導體圖案3包含第1電極11、第2電極12及配線9,材料為銅,厚度為50μm。又,第1凸塊4及第2凸塊5之材料為SnAgCu焊料,厚度為140μm。
The
第2磁性層7及磁性層10之材料為日本專利特開2014-189015號公報之實施例1中記載之磁性組合物。
The material of the second
第1電極11、第2電極12及配線9之尺寸、以及第1凸塊4及第2凸塊5與磁性層10之間隔IN分別如表1所記載。
The dimensions of the
實施例2~比較例1
將第1電極11及第2電極12之尺寸等如表1所記載般進行變更,除此以外,與實施例1同樣地準備電感器1。
The
再者,實施例3為圖5所示之第1變化例之電感器1,又,比較例1為圖15所示之本發明之範圍外之電感器1。
In addition, Example 3 is the
[電阻] [resistance]
以四端子法分別測定製造中途之圖3B及圖4B所示之第1電極11及第2電極12間之電阻R1、與所獲得之電感器1之第1凸塊4及第2凸塊5間之電阻R2,算出第1電極11及第2電極12間之電阻R1相對於第1凸塊4及第2凸塊5間之電阻R2之百分率(R1/R2×100)。
The resistance R1 between the
[短路] [short circuit]
以兩端子法測定第1凸塊4及磁性層10間之電阻值,並根據下述評估
第1凸塊4及磁性層10間之短路性(導通性)。
Measure the resistance value between the
○:1MΩ以上。 ○: 1 MΩ or more.
△:超過0.1MΩ且未達1MΩ。 Δ: More than 0.1 MΩ and less than 1 MΩ.
×:未達0.1MΩ。 ×: Less than 0.1 MΩ.
再者,上述發明作為本發明之例示之實施形態而提供,但其僅為例示,不能限定性地進行解釋。對該技術領域之業者而言明確之本發明之變化例包含於下述申請專利範圍。 In addition, the above-mentioned invention is provided as an exemplary embodiment of the present invention, but it is only an illustration and should not be interpreted limitedly. Modifications of the present invention that are clear to those skilled in the art are included in the following claims.
電感器例如用作被動元件。 Inductors are used, for example, as passive components.
1‧‧‧電感器 1‧‧‧Inductor
2‧‧‧基底層 2‧‧‧Base layer
3‧‧‧導體圖案 3‧‧‧conductor pattern
4‧‧‧第1凸塊 4‧‧‧1st bump
5‧‧‧第2凸塊 5‧‧‧The second bump
6‧‧‧覆蓋絕緣層 6‧‧‧Covering insulating layer
8‧‧‧基底絕緣層 8‧‧‧Insulating base layer
9‧‧‧配線 9‧‧‧Wiring
10‧‧‧磁性層 10‧‧‧Magnetic layer
11‧‧‧第1電極 11‧‧‧1st electrode
12‧‧‧第2電極 12‧‧‧Second electrode
13‧‧‧直線部 13‧‧‧straight line
14‧‧‧連結部 14‧‧‧connection part
15‧‧‧配線區域 15‧‧‧Wiring area
IL0‧‧‧假想最短線段 IL0‧‧‧imaginary shortest line segment
IL1‧‧‧第1假想線段 IL1‧‧‧1st imaginary line segment
IL2‧‧‧第2假想線段 IL2‧‧‧The second imaginary line segment
IL3‧‧‧第3假想線段 IL3‧‧‧3rd imaginary line segment
IL4‧‧‧第4假想線段 IL4‧‧‧4th imaginary line segment
L‧‧‧沿著長邊方向(最短方向)之第1電極及第2電極間之長度 L‧‧‧The length between the first electrode and the second electrode along the long side direction (shortest direction)
LS1‧‧‧第1電極之長邊 LS1‧‧‧long side of the first electrode
LS2‧‧‧第2電極之長邊 LS2‧‧‧long side of the second electrode
SP‧‧‧間隔 SP‧‧‧Interval
SS1‧‧‧第1電極之短邊 SS1‧‧‧The short side of the first electrode
SS2‧‧‧第2電極之短邊 SS2‧‧‧Short side of the second electrode
W‧‧‧寬度 W‧‧‧Width
W3‧‧‧寬度 W3‧‧‧width
X‧‧‧長邊方向長度 X‧‧‧long side length
Y‧‧‧前後方向長度 Y‧‧‧Length in front and rear direction
Claims (10)
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2018
- 2018-09-05 CN CN201880062334.8A patent/CN111149177B/en active Active
- 2018-09-05 WO PCT/JP2018/032853 patent/WO2019058967A1/en not_active Ceased
- 2018-09-05 KR KR1020207008165A patent/KR102512587B1/en active Active
- 2018-09-05 US US16/648,173 patent/US11735355B2/en active Active
- 2018-09-13 TW TW107132160A patent/TWI802590B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200060377A (en) | 2020-05-29 |
| KR102512587B1 (en) | 2023-03-21 |
| TW201921393A (en) | 2019-06-01 |
| CN111149177A (en) | 2020-05-12 |
| JP7140481B2 (en) | 2022-09-21 |
| JP2019062002A (en) | 2019-04-18 |
| US20200265991A1 (en) | 2020-08-20 |
| CN111149177B (en) | 2022-06-07 |
| WO2019058967A1 (en) | 2019-03-28 |
| US11735355B2 (en) | 2023-08-22 |
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