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TWI800945B - 顯示面板 - Google Patents

顯示面板 Download PDF

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Publication number
TWI800945B
TWI800945B TW110137797A TW110137797A TWI800945B TW I800945 B TWI800945 B TW I800945B TW 110137797 A TW110137797 A TW 110137797A TW 110137797 A TW110137797 A TW 110137797A TW I800945 B TWI800945 B TW I800945B
Authority
TW
Taiwan
Prior art keywords
display panel
panel
display
Prior art date
Application number
TW110137797A
Other languages
English (en)
Other versions
TW202316402A (zh
Inventor
吳仰恩
林世雄
蘇振嘉
李俊雨
Original Assignee
友達光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 友達光電股份有限公司 filed Critical 友達光電股份有限公司
Priority to TW110137797A priority Critical patent/TWI800945B/zh
Priority to US17/701,683 priority patent/US12412873B2/en
Priority to CN202210350437.2A priority patent/CN114613801A/zh
Publication of TW202316402A publication Critical patent/TW202316402A/zh
Application granted granted Critical
Publication of TWI800945B publication Critical patent/TWI800945B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10W70/099—
    • H10W70/60—
    • H10W70/6523—
    • H10W72/01304—
    • H10W72/071—
    • H10W72/07236—
    • H10W72/073—
    • H10W72/07307—
    • H10W72/07336—
    • H10W72/222—
    • H10W72/252—
    • H10W72/322—
    • H10W72/352—
    • H10W72/874—
    • H10W90/22—
    • H10W90/724—
    • H10W90/734—
TW110137797A 2021-10-12 2021-10-12 顯示面板 TWI800945B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW110137797A TWI800945B (zh) 2021-10-12 2021-10-12 顯示面板
US17/701,683 US12412873B2 (en) 2021-10-12 2022-03-23 Display panel having vertical light emitting device and flip chip light emitting device
CN202210350437.2A CN114613801A (zh) 2021-10-12 2022-04-02 显示面板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW110137797A TWI800945B (zh) 2021-10-12 2021-10-12 顯示面板

Publications (2)

Publication Number Publication Date
TW202316402A TW202316402A (zh) 2023-04-16
TWI800945B true TWI800945B (zh) 2023-05-01

Family

ID=81867318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110137797A TWI800945B (zh) 2021-10-12 2021-10-12 顯示面板

Country Status (3)

Country Link
US (1) US12412873B2 (zh)
CN (1) CN114613801A (zh)
TW (1) TWI800945B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120358862A (zh) * 2022-06-30 2025-07-22 湖北长江新型显示产业创新中心有限公司 一种显示面板、显示装置及制备方法
WO2025108558A1 (en) * 2023-11-24 2025-05-30 Ams-Osram International Gmbh Processed wafer and method for processing a plurality of optoelectronic devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111524928A (zh) * 2020-04-30 2020-08-11 厦门天马微电子有限公司 一种显示面板及显示装置
TW202127119A (zh) * 2020-01-14 2021-07-16 友達光電股份有限公司 顯示裝置及其製造方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US9443903B2 (en) * 2006-06-30 2016-09-13 Cree, Inc. Low temperature high strength metal stack for die attachment
WO2013097046A1 (zh) * 2011-12-26 2013-07-04 璩泽明 电极共平面的发光二极管元件、封装结构及光反射结构
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
WO2017049419A1 (zh) * 2015-09-21 2017-03-30 璩泽明 覆晶式发光二极管封装结构
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US10910535B2 (en) * 2017-11-08 2021-02-02 SemiLEDs Optoelectronics Co., Ltd. Method for making light emitting device LED arrays
TWI641126B (zh) 2017-12-04 2018-11-11 Au Optronics Corp. 畫素結構
TWI706554B (zh) * 2017-12-13 2020-10-01 友達光電股份有限公司 畫素陣列基板及其製造方法
US10840407B2 (en) * 2018-11-14 2020-11-17 Innolux Corporation Electronic device and method for manufacturing the same
CN112216803B (zh) * 2019-07-09 2025-04-29 群创光电股份有限公司 发光装置及其制作方法
TWI715277B (zh) * 2019-11-05 2021-01-01 友達光電股份有限公司 顯示面板及其製造方法
KR102905220B1 (ko) * 2020-07-15 2025-12-30 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR102222355B1 (ko) 2020-07-31 2021-03-03 (주)라이타이저 Led칩 디스플레이 패널로의 전사 및 그 전사 전의 led칩 테스트를 위한 미들 플랫폼 장치
CN112786641A (zh) * 2021-01-29 2021-05-11 錼创显示科技股份有限公司 可选择性修补的微型发光二极管显示器及其修补方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202127119A (zh) * 2020-01-14 2021-07-16 友達光電股份有限公司 顯示裝置及其製造方法
CN111524928A (zh) * 2020-04-30 2020-08-11 厦门天马微电子有限公司 一种显示面板及显示装置

Also Published As

Publication number Publication date
US12412873B2 (en) 2025-09-09
CN114613801A (zh) 2022-06-10
TW202316402A (zh) 2023-04-16
US20230112531A1 (en) 2023-04-13

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