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TWI800665B - 半導體晶圓的加工方法 - Google Patents

半導體晶圓的加工方法 Download PDF

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Publication number
TWI800665B
TWI800665B TW108124119A TW108124119A TWI800665B TW I800665 B TWI800665 B TW I800665B TW 108124119 A TW108124119 A TW 108124119A TW 108124119 A TW108124119 A TW 108124119A TW I800665 B TWI800665 B TW I800665B
Authority
TW
Taiwan
Prior art keywords
processing method
semiconductor wafer
wafer processing
semiconductor
wafer
Prior art date
Application number
TW108124119A
Other languages
English (en)
Other versions
TW202006810A (zh
Inventor
若原匡俊
法蘭克 魏
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202006810A publication Critical patent/TW202006810A/zh
Application granted granted Critical
Publication of TWI800665B publication Critical patent/TWI800665B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H10P34/42—
    • H10P50/242—
    • H10P50/691—
    • H10P54/00—
    • H10P70/00—
    • H10P70/23—
    • H10P72/7402—
    • H10W10/00—
    • H10W10/01—
    • H10W74/014—
    • H10P14/40—
    • H10P14/60—
    • H10P52/00—
    • H10P72/7416—
    • H10W72/012—
    • H10W72/01208—
    • H10W72/01235—
    • H10W72/01238—
    • H10W72/01251—
    • H10W72/01253—
    • H10W72/01257—
    • H10W72/252—
    • H10W72/29—
    • H10W72/923—
    • H10W72/9415—
    • H10W72/952—
    • H10W72/983—
    • H10W74/129—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
TW108124119A 2018-07-10 2019-07-09 半導體晶圓的加工方法 TWI800665B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018130981A JP7109862B2 (ja) 2018-07-10 2018-07-10 半導体ウェーハの加工方法
JP2018-130981 2018-07-10

Publications (2)

Publication Number Publication Date
TW202006810A TW202006810A (zh) 2020-02-01
TWI800665B true TWI800665B (zh) 2023-05-01

Family

ID=69139633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108124119A TWI800665B (zh) 2018-07-10 2019-07-09 半導體晶圓的加工方法

Country Status (6)

Country Link
US (1) US10796962B2 (zh)
JP (1) JP7109862B2 (zh)
KR (1) KR102708971B1 (zh)
CN (1) CN110707008B (zh)
DE (1) DE102019210185B4 (zh)
TW (1) TWI800665B (zh)

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JP7068028B2 (ja) * 2018-05-09 2022-05-16 株式会社ディスコ ウェーハの分割方法
US11171109B2 (en) * 2019-09-23 2021-11-09 Micron Technology, Inc. Techniques for forming semiconductor device packages and related packages, intermediate products, and methods
WO2021138794A1 (en) * 2020-01-07 2021-07-15 Yangtze Memory Technologies Co., Ltd. Methods for multi-wafer stacking and dicing
CN115023801B (zh) * 2020-01-27 2025-08-29 琳得科株式会社 带保护膜的半导体芯片的剥离方法
JP7062147B2 (ja) * 2020-02-21 2022-05-02 ヌヴォトンテクノロジージャパン株式会社 個片化方法
JP7273756B2 (ja) * 2020-03-18 2023-05-15 株式会社東芝 半導体装置及びその製造方法
KR102439099B1 (ko) * 2020-03-19 2022-09-02 매그나칩 반도체 유한회사 반도체 다이 형성 및 칩-온-플라스틱 패키징 방법
US11393720B2 (en) 2020-06-15 2022-07-19 Micron Technology, Inc. Die corner protection by using polymer deposition technology
JP7570860B2 (ja) * 2020-09-16 2024-10-22 株式会社ディスコ ウエーハの加工方法
US11728312B2 (en) 2021-01-22 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor packaging and methods of forming same
US20220238473A1 (en) * 2021-01-25 2022-07-28 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
KR20220167106A (ko) 2021-06-11 2022-12-20 삼성전자주식회사 반도체 칩 및 반도체 패키지
JP7785469B2 (ja) * 2021-06-30 2025-12-15 株式会社ディスコ 製造方法
JP7726690B2 (ja) * 2021-07-30 2025-08-20 株式会社ディスコ チップの製造方法
JP2023046922A (ja) * 2021-09-24 2023-04-05 株式会社ディスコ 板状物の加工方法
CN115051664B (zh) * 2022-07-06 2025-11-28 成都泰美克晶体技术有限公司 一种石英谐振器晶片的制作方法及石英谐振器晶片
JP2024035335A (ja) * 2022-09-02 2024-03-14 株式会社ディスコ デバイスウェーハの加工方法
CN117399089B (zh) * 2023-12-06 2026-01-06 苏州敏芯微电子技术股份有限公司 微流道芯片的制造方法

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TW200303071A (en) * 2002-02-08 2003-08-16 Hitachi Ltd Manufacturing method of semiconductor device
TW201448009A (zh) * 2013-05-22 2014-12-16 應用材料股份有限公司 藉由雷射劃線及電漿蝕刻混合手段以寬切口進行晶圓分割
TW201643957A (zh) * 2015-04-17 2016-12-16 迪思科股份有限公司 晶圓的分割方法
TW201820465A (zh) * 2016-08-30 2018-06-01 上海新昇半導體科技有限公司 蝕刻方法、蝕刻裝置及半導體晶圓分割方法

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JP2000243754A (ja) * 1999-02-24 2000-09-08 Sanyo Electric Co Ltd 半導体装置
US6420245B1 (en) * 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
US6596562B1 (en) * 2002-01-03 2003-07-22 Intel Corporation Semiconductor wafer singulation method
JP4072141B2 (ja) 2003-07-31 2008-04-09 沖電気工業株式会社 半導体装置の製造方法
JP2005064231A (ja) * 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd 板状物の分割方法
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JP4422463B2 (ja) * 2003-11-07 2010-02-24 株式会社ディスコ 半導体ウエーハの分割方法
US6974726B2 (en) * 2003-12-30 2005-12-13 Intel Corporation Silicon wafer with soluble protective coating
GB2420443B (en) * 2004-11-01 2009-09-16 Xsil Technology Ltd Increasing die strength by etching during or after dicing
JP2006237056A (ja) * 2005-02-22 2006-09-07 Mitsubishi Electric Corp 半導体装置の製造方法
JP2009021476A (ja) * 2007-07-13 2009-01-29 Disco Abrasive Syst Ltd ウエーハの分割方法
JP5589576B2 (ja) * 2010-06-10 2014-09-17 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体基板
US8912077B2 (en) * 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US8598016B2 (en) * 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US8673741B2 (en) * 2011-06-24 2014-03-18 Electro Scientific Industries, Inc Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall
JP6166034B2 (ja) * 2012-11-22 2017-07-19 株式会社ディスコ ウエーハの加工方法
JP2014120494A (ja) * 2012-12-13 2014-06-30 Disco Abrasive Syst Ltd ウエーハの加工方法
US20140273401A1 (en) * 2013-03-14 2014-09-18 Wei-Sheng Lei Substrate laser dicing mask including laser energy absorbing water-soluble film
JP6162018B2 (ja) * 2013-10-15 2017-07-12 株式会社ディスコ ウエーハの加工方法
JP6587911B2 (ja) * 2015-11-16 2019-10-09 株式会社ディスコ ウエーハの分割方法
JP6560969B2 (ja) * 2015-12-01 2019-08-14 株式会社ディスコ ウエーハの分割方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200303071A (en) * 2002-02-08 2003-08-16 Hitachi Ltd Manufacturing method of semiconductor device
TW201448009A (zh) * 2013-05-22 2014-12-16 應用材料股份有限公司 藉由雷射劃線及電漿蝕刻混合手段以寬切口進行晶圓分割
TW201643957A (zh) * 2015-04-17 2016-12-16 迪思科股份有限公司 晶圓的分割方法
TW201820465A (zh) * 2016-08-30 2018-06-01 上海新昇半導體科技有限公司 蝕刻方法、蝕刻裝置及半導體晶圓分割方法

Also Published As

Publication number Publication date
DE102019210185A1 (de) 2020-01-16
CN110707008B (zh) 2023-09-19
TW202006810A (zh) 2020-02-01
CN110707008A (zh) 2020-01-17
US10796962B2 (en) 2020-10-06
JP7109862B2 (ja) 2022-08-01
DE102019210185B4 (de) 2022-06-23
KR20200006498A (ko) 2020-01-20
KR102708971B1 (ko) 2024-09-23
US20200020585A1 (en) 2020-01-16
JP2020009957A (ja) 2020-01-16

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