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TWI800024B - Semiconductor device and operation method thereof - Google Patents

Semiconductor device and operation method thereof Download PDF

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Publication number
TWI800024B
TWI800024B TW110137321A TW110137321A TWI800024B TW I800024 B TWI800024 B TW I800024B TW 110137321 A TW110137321 A TW 110137321A TW 110137321 A TW110137321 A TW 110137321A TW I800024 B TWI800024 B TW I800024B
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TW
Taiwan
Prior art keywords
semiconductor device
operation method
semiconductor
Prior art date
Application number
TW110137321A
Other languages
Chinese (zh)
Other versions
TW202232738A (en
Inventor
呂函庭
宋政霖
陳威臣
Original Assignee
旺宏電子股份有限公司
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Filing date
Publication date
Application filed by 旺宏電子股份有限公司 filed Critical 旺宏電子股份有限公司
Publication of TW202232738A publication Critical patent/TW202232738A/en
Application granted granted Critical
Publication of TWI800024B publication Critical patent/TWI800024B/en

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TW110137321A 2021-02-05 2021-10-07 Semiconductor device and operation method thereof TWI800024B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163145989P 2021-02-05 2021-02-05
US63/145,989 2021-02-05

Publications (2)

Publication Number Publication Date
TW202232738A TW202232738A (en) 2022-08-16
TWI800024B true TWI800024B (en) 2023-04-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW110137321A TWI800024B (en) 2021-02-05 2021-10-07 Semiconductor device and operation method thereof

Country Status (1)

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TW (1) TWI800024B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240251550A1 (en) * 2023-01-19 2024-07-25 Winbond Electronics Corp. Three-dimensional flash memory device and method for forming the same
US20250220882A1 (en) * 2023-12-29 2025-07-03 Nanya Technology Corporation Semiconductor device including vertical transistor and method of manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201939721A (en) * 2018-03-14 2019-10-01 日商東芝記憶體股份有限公司 Semiconductor device
US20200168623A1 (en) * 2018-11-28 2020-05-28 Sandisk Technologies Llc Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same
CN111211130A (en) * 2020-01-16 2020-05-29 长江存储科技有限责任公司 3D memory device and method of manufacturing the same
TW202101738A (en) * 2019-06-27 2021-01-01 大陸商長江存儲科技有限責任公司 Semiconductor device and method of fabricating the same
CN112185980A (en) * 2020-09-09 2021-01-05 长江存储科技有限责任公司 Three-dimensional memory and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201939721A (en) * 2018-03-14 2019-10-01 日商東芝記憶體股份有限公司 Semiconductor device
US20200168623A1 (en) * 2018-11-28 2020-05-28 Sandisk Technologies Llc Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same
TW202101738A (en) * 2019-06-27 2021-01-01 大陸商長江存儲科技有限責任公司 Semiconductor device and method of fabricating the same
CN111211130A (en) * 2020-01-16 2020-05-29 长江存储科技有限责任公司 3D memory device and method of manufacturing the same
CN112185980A (en) * 2020-09-09 2021-01-05 长江存储科技有限责任公司 Three-dimensional memory and manufacturing method thereof

Also Published As

Publication number Publication date
TW202232738A (en) 2022-08-16

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