TWI892606B - Optoelectronic semiconductor module - Google Patents

Abstract

An optoelectronic semiconductor module (1), comprising a light source (10) having at least one semiconductor emitter (100) and a photovoltaic module (20) having at least one photovoltaic element (200) arranged on a substrate (210), is described herein. The light source (10) is configured to emit a first electromagnetic radiation. The photovoltaic module (20) is configured to convert at least part of the optical power of the first electromagnetic radiation into an electric power, and the photovoltaic module (20) comprises an absorbing buffer layer (220).

Description

Optoelectronic semiconductor module

The present invention relates to a photovoltaic semiconductor module. In particular, the photovoltaic semiconductor module is configured to convert an electrical input power signal into an output power signal having a different voltage and/or current.

The object of the present invention is to provide a photovoltaic semiconductor module with improved reliability.

The object of the invention is achieved by means of a device according to the independent claim. Advantageous embodiments and further developments of the device are the subject of the dependent claims and will become apparent from the following description and the accompanying drawings.

According to at least one embodiment, a photovoltaic semiconductor module includes a light source having at least one semiconductor emitter. Preferably, the semiconductor module includes a substrate on which the semiconductor emitter is disposed. In particular, the substrate is mechanically self-supporting. For example, the semiconductor emitter is disposed on a side of the substrate facing the photovoltaic module. Alternatively, the semiconductor emitter is disposed on a side of the substrate facing away from the photovoltaic module. Preferably, the substrate is formed of a material that is translucent to the electromagnetic radiation generated by the emitter during intended operation.

The semiconductor emitter is configured to emit electromagnetic radiation in a main emission direction, for example during intended operation. The main emission direction is preferably oriented perpendicularly to a main extension plane of the base body of the light source.

According to at least one embodiment, an optoelectronic semiconductor module includes a photovoltaic module having at least one optoelectronic element disposed on a substrate. The photovoltaic module is particularly suitable for converting optical power into electrical power. The substrate is preferably mechanically self-supporting. In particular, the substrate is a growth substrate for the optoelectronic element. For example, the substrate is formed from a semi-insulating material, in particular GaAs. Furthermore, the main emission direction of the light source is particularly oriented toward the photovoltaic module.

According to at least one embodiment of the optoelectronic semiconductor module, the light source is configured to emit first electromagnetic radiation. In particular, the first electromagnetic radiation has a dominant wavelength, with its spectral region beginning in the visible spectrum (i.e., between 380 nm and 780 nm) and extending into the infrared spectral region between 780 nm and 2 μm. For example, the dominant wavelength of the light source is between 800 nm and 900 nm. The dominant wavelength is understood to be the wavelength at which the intensity in the emission spectrum reaches a global maximum.

According to at least one embodiment of the optoelectronic semiconductor module, the photovoltaic module is configured to convert at least a portion of the optical power of the first electromagnetic radiation into electrical power. In particular, the first electromagnetic radiation has a dominant wavelength that overlaps with an absorption spectrum of the photovoltaic module. Preferably, the absorption spectrum of the photovoltaic module includes a peak in the dominant emission wavelength region of the light source.

According to at least one embodiment of the optoelectronic semiconductor module, the photovoltaic module includes an absorption buffer layer. The absorption buffer layer is configured to absorb first electromagnetic radiation. For example, the absorption buffer layer absorbs at least 90% of the incident first electromagnetic radiation that propagates through the absorption buffer layer. Preferably, the absorption buffer layer absorbs at least 99% of the incident first electromagnetic radiation that propagates through the absorption buffer layer. Even more preferably, the absorption buffer layer absorbs at least 99.9% of the incident first electromagnetic radiation that propagates through the absorption buffer layer. Preferably, the absorbing buffer layer is configured to absorb the first electromagnetic radiation incident on the region of the photovoltaic module to which the substrate would otherwise be directly exposed.

The absorbing buffer layer is preferably disposed on the side of the substrate facing the light source between the photovoltaic elements. In particular, the absorbing buffer layer covers at least the lateral portion between adjacent photovoltaic elements.

According to at least one embodiment of the optoelectronic semiconductor module, including

- a light source having at least one semiconducting emitter, and

- A photovoltaic module having at least one photovoltaic element disposed on a substrate, wherein

- The light source is configured to emit first electromagnetic radiation,

- The photovoltaic module is configured to convert at least a portion of the optical power of the first electromagnetic radiation into electrical power, and

- The photovoltaic module includes an absorber buffer layer.

The optoelectronic semiconductor modules described herein are based on the following considerations: optoelectronic modules for wireless optical power transmission systems typically include a light source (e.g., VCSEL, edge-emitting laser, LED, etc.) located in front of a light absorbing device (e.g., photovoltaic module).

The output power of the light source is optically transmitted to the photovoltaic module, where it is converted back into electrical power. This process not only eliminates the need for wires as a physical medium for transmitting electrical power, but also increases or decreases the voltage or current at the output terminals of the photovoltaic module compared to the input terminals of the light source. Therefore, photovoltaic elements can be connected in an array, with the elements connected in series or parallel depending on whether the current or voltage needs to be increased or decreased.

In known transmission systems, there is a light source aperture for each photovoltaic element aperture. However, placing the emitter and photovoltaic element in perfect alignment in front of each other can be difficult. Small lateral and/or rotational offsets can change the position of the light beam incident on the photovoltaic module. Misalignment between the light source and the photovoltaic module can result in at least a portion of the light beam emitted by the light source not being fully incident on the photovoltaic module. In other words, misalignment can result in an inactive region of the photovoltaic module, which compromises its reliability and efficiency.

Another challenge arising from this situation is substrate leakage within the photovoltaic module. Typically, photovoltaic modules are grown/placed directly on a semi-insulating, high-resistance GaAs substrate. When the substrate material is directly exposed to light (which can occur, for example, due to misalignment between the light source and the photovoltaic module), its resistance drops significantly, and it becomes conductive. This can create a current leakage path beneath the photovoltaic element, effectively shorting it out.

The optoelectronic semiconductor module described herein is based on the concept of placing an absorption buffer layer between a substrate and a photovoltaic element. This absorption buffer layer can be closely lattice-matched to the underlying semi-insulating gallium arsenide (GaAs) substrate. For example, the absorption buffer layer has an energy gap Eg that is smaller than the photon energy of the incident first electromagnetic radiation. Additionally, the absorption buffer layer can be made thick enough to absorb a large portion of the first electromagnetic radiation that propagates through the absorption buffer layer. Furthermore, the absorption buffer layer can have a relatively high resistivity, allowing it to provide electrical isolation between adjacent photovoltaic elements. The absorption buffer layer's role in preventing photoleakage in the substrate further enables the use of alternative illumination methods and light sources.

According to at least one embodiment, the optoelectronic semiconductor module includes a light diffusing element disposed between the light source and the photovoltaic module. Preferably, the light diffusing element blocks any direct connection between the light source and the photovoltaic module. With the light diffusing element, rotational and/or lateral misalignment of the light source relative to the photovoltaic module is tolerated because the light diffusing element converts the emitter's single light beam into uniform illumination across the entire photovoltaic module.

According to at least one embodiment of the optoelectronic semiconductor module, a diffusing element is configured to diffuse the first electromagnetic radiation. The light diffusing element diffuses the light in a manner that transmits a softer light. The light diffusing element is, for example, a refractive or diffractive element for the first electromagnetic radiation. The light diffusing element is particularly transparent to the first electromagnetic radiation. The diffused light uniformly illuminates the photovoltaic module and advantageously reduces the need to align the light source with respect to the photovoltaic module.

According to at least one embodiment of the optoelectronic semiconductor module, the semiconductor emitter is a VCSEL. A vertical-cavity surface-emitting laser (VCSEL) is a type of laser diode that emits light perpendicular to the main extension plane of the semiconductor emitter. Advantageously, VCSEL diodes can have lower manufacturing costs and better beam quality than edge emitters. Furthermore, VCSELs can emit coherent radiation in monomode, and the wavelength can be easily determined due to their simple structure.

According to at least one embodiment of the optoelectronic module, the semiconductor emitter is a light-emitting diode, preferably a micro-LED.

Compared to VCSEL diodes, LEDs emit electromagnetic radiation with a wider spectral range. Advantageously, LEDs can emit electromagnetic radiation at a wide angle, thus achieving uniform illumination over large areas. LEDs are also available in micro-LED form factors, which are particularly small.

Broadly speaking, a micro-LED can be defined as any exceptionally small light-emitting diode (LED), typically not a laser. In general, in addition to size, the removal of the growth substrate from the micro-LED is a crucial criterion, so the typical height of such micro-LEDs is, for example, in the range of 1.5μm to 10μm.

In principle, a micro-LED does not necessarily have a rectangular radiation-emitting surface. For example, a conventional LED may have a radiation-emitting surface where any lateral extent of the radiation-emitting surface is less than or equal to 100 μm or less than or equal to 70 μm in a top view of each layer of the layer stack.

For example, in the case of rectangular micro-LEDs, edge lengths (particularly when viewed from the top of the stack) are typically quoted as less than or equal to 70μm or less than or equal to 50μm as a standard. In most cases, these micro-LEDs are mounted on wafers with non-destructive, removable mounting structures. Currently, micro-LEDs are primarily used in displays.

Micro-LEDs form pixels or sub-pixels and emit light of defined colors. The small pixel size and high density make micro-LEDs suitable for small monolithic displays for AR applications, particularly data glasses. Other applications are also under development, particularly in data communications or pixelated lighting applications.

Different spellings of micro-LED, such as μLED, μ-LED, uLED, u-LED, or micro-light-emitting diode, can be found in the relevant literature.

According to at least one embodiment of the optoelectronic module, the light source includes only a semiconductor emitter. The use of a single emitter simplifies the manufacturing of the semiconductor module and can further save costs.

According to at least one embodiment of the photoconductor module, the light source includes a plurality of semiconductor emitters. By configuring a plurality of semiconductor emitters in the light source, better and more uniform light emission can be achieved.

According to at least one embodiment of the photoconductor module, the photovoltaic module includes a plurality of photovoltaic elements. For example, the photovoltaic elements are arranged in an array. The photovoltaic elements can be electrically connected in series or in parallel to generate high current or high voltage.

According to at least one embodiment of the optoelectronic module, each photovoltaic element is assigned to a semiconductor emitter. In other words, each semiconductor emitter has exactly one photovoltaic element.

According to at least one embodiment of the photoconductor module, the absorption buffer layer is formed epitaxially. For example, the absorption buffer layer is formed by an epitaxial growth process. In particular, the absorption buffer layer is lattice-matched to the material of the substrate.

According to at least one embodiment of the photoconductor module, the absorbing buffer layer is formed from a material having an energy gap Eg lower than the energy of the first electromagnetic radiation. The energy of the first electromagnetic radiation is described in terms of photon energy, which is directly proportional to the frequency of the first electromagnetic radiation. In other words, the energy gap Eg < h*f, where h is Planck's constant and f is the frequency of the first electromagnetic radiation. In particular, the absorbing buffer layer is formed from a semiconductor material.

According to at least one embodiment of the photoconductor module, the absorption buffer layer is formed from a material having a light absorption coefficient of at least 5000 cm ^-1 . This high light absorption coefficient enables high absorption at a small vertical distance, which facilitates the use of a thin absorption buffer layer.

According to at least one embodiment of the photoconductor module, the absorption buffer layer is formed from one of the following materials: gallium antimonide, aluminum arsenide, indium gallium arsenide, aluminum gallium arsenide, or a combination thereof. These materials have a high optical absorption coefficient for the first electromagnetic radiation.

According to at least one embodiment of the photoconductor module, the maximum distance between the diffusing element and the light source is at most 300 μm, preferably at most 100 μm, and more preferably at most 20 μm. The short distance between the light source and the diffusing element can particularly diffuse the light emission.

According to at least one embodiment of the photoconductor module, the diffusing element is attached to the light source. The diffusing element is arranged directly at the light source to allow for an advantageously small form factor.

According to at least one embodiment of the photoconductor module, the diffusion element includes at least one microlens. In particular, the diffusion element includes a plurality of microlenses. For example, the microlenses are arranged in a defocused manner relative to the light source to produce a blurred image.

According to at least one embodiment of the photoconductor module, the diffusion element is formed from at least one of the following materials: a polymer, glass, or a metamaterial. In particular, the diffusion element includes a translucent matrix material in which particles of an optical diffusion material are embedded. The diffusion material is made, for example, of titanium dioxide or barium sulfate.

The optoelectronic semiconductor module described herein is particularly suitable for use in optical power transmitters or photoelectric voltage transformers, for example, to power avalanche photodiodes that require high voltage.

1: Optoelectronic semiconductor module

10: Light Source

100:Semiconductor emitter

110: Matrix

20: Photovoltaic special module

200: Photovoltaic special components

2001: District 1

2002: District 2

2003: Zone 3; Anode Zone

2004: Contact Components

210:Substrate

220: Absorption buffer layer

30: Light Diffusing Element

30X: Distance

S: Space

Further advantages and advantageous designs and further developments of the optoelectronic semiconductor module will become apparent from the exemplary embodiments described below in conjunction with the accompanying drawings.

FIG1 shows a cross-sectional view of a photovoltaic module according to a first exemplary embodiment.

FIG2 shows a detailed view of a cross-sectional view of a photovoltaic module according to the first exemplary embodiment.

FIG3 shows a cross-sectional view of a photovoltaic semiconductor module according to the first exemplary embodiment.

FIG4 shows a cross-sectional view of a substrate of a photovoltaic module according to a second exemplary embodiment.

FIG5 is a graph showing the optical transmittance in the absorption buffer layer of the photovoltaic module according to the second exemplary embodiment.

FIG6 shows a cross-sectional view of an optoelectronic semiconductor module according to a second exemplary embodiment.

FIG7 shows a cross-sectional view of an optoelectronic semiconductor module according to a third exemplary embodiment.

FIG8 shows a cross-sectional view of an optoelectronic semiconductor module according to a fourth exemplary embodiment.

In the drawings, identical, similar, or equivalent elements are labeled with the same reference numerals. The figures and the proportions of the elements shown in the figures relative to one another should not be considered true to scale. On the contrary, individual elements may be exaggerated for better representation and/or comprehensibility.

FIG1 shows a cross-sectional view of a photovoltaic module 20 according to a first exemplary embodiment. The photovoltaic module 20 includes a plurality of photovoltaic elements 200 disposed on a substrate 210. The photovoltaic module 20 is designed to have a global maximum in its absorption spectrum at, for example, 850 nm.

Each photovoltaic device 200 includes a first region 2001, a second region 2002, and a third region 2003 stacked on top of each other. The first region 2001 is an n-conductive semiconductor region. The second region 2002 is a p-conductive semiconductor region. The third region 2003 is an anode region. For example, the photovoltaic module 20 is formed of GaAs. Each photovoltaic device 200 includes at least one electrically active region between the first region 2001 and the second region 2002, serving as a single-junction device. When light with a wavelength within the absorption spectrum of the photovoltaic device 200 is incident on the active region, electric charges are generated. In particular, each photovoltaic device 200 can include multiple active regions, serving as a multi-junction device.

During operation, photovoltaic element 200 generates voltage and converts light power into electrical power. Furthermore, contact element 2004 is attached to photovoltaic element 200 and connects the anode region 2003 of adjacent photovoltaic element 200 to first region 2001 of photovoltaic element 200. Consequently, multiple photovoltaic elements 200 are connected in series. This can generate high voltage. Alternatively, all photovoltaic elements 200 can be connected in parallel to generate high current at a lower voltage.

FIG2 shows a detailed cross-sectional view of a photovoltaic module 20 according to a first exemplary embodiment. The detailed view in FIG2 clearly illustrates the arrangement of contact elements 2004 between adjacent photovoltaic elements 200 and empty spaces S. If substrate 210 is irradiated with first electromagnetic radiation, for example, in empty spaces S between adjacent photovoltaic elements 200, this can result in the undesirable generation of free charge carriers in the substrate, significantly reducing the substrate's resistivity and thus causing leakage currents and short circuits in photovoltaic module 20.

Figure 3 shows a cross-sectional view of a photovoltaic semiconductor module 1 according to a first exemplary embodiment. The photovoltaic semiconductor module 1 includes a light source having a plurality of semiconductor emitters 100 disposed on a substrate 110. The substrate 110 is formed from a mechanically stable material, such as a growth substrate formed from sapphire. In particular, the mechanically stable element is self-supporting. The semiconductor emitters 100 are disposed on the side of the substrate 110 facing the photovoltaic module 20.

Furthermore, the semiconductor emitter 100 is configured to emit electromagnetic radiation along a main emission direction during the intended operation. The main emission direction is preferably oriented perpendicular to the main extension plane of the optoelectronic semiconductor module 1.

The optoelectronic semiconductor module 1 further includes a photovoltaic module 20 having a plurality of photovoltaic elements 200 disposed on a substrate 210. Each emitter 100 is assigned a dedicated photovoltaic element 200.

The photovoltaic module 20 is particularly suitable for converting light power into electrical power. The substrate 210 is preferably mechanically self-supporting. In particular, the substrate 210 serves as a growth substrate for the photovoltaic element 200. For example, the substrate 210 is formed of GaAs.

Light source 10 is configured to emit first electromagnetic radiation. Specifically, the first electromagnetic radiation has a dominant wavelength in a spectral region that begins in the visible spectrum, i.e., between 380 nm and 780 nm, and extends into the infrared spectrum, between 780 nm and 2 μm. The dominant wavelength is understood to be the wavelength in the emission spectrum where the intensity reaches a global maximum. For example, the dominant wavelength of the light source is between 800 nm and 900 nm.

The photovoltaic module 20 is configured to convert at least a portion of the optical power of the first electromagnetic radiation into electrical power. In particular, the first electromagnetic radiation has a dominant wavelength that overlaps with the absorption spectrum of the photovoltaic module 20. Preferably, the absorption spectrum of the photovoltaic module 20 includes a peak in the dominant emission wavelength region of the light source 10.

The photovoltaic module 20 further includes an absorption buffer layer 220. The absorption buffer layer 220 is configured to absorb the first electromagnetic radiation. For example, the absorption buffer layer 220 absorbs at least 90% of the incident first electromagnetic radiation that propagates through the absorption buffer layer 220. Preferably, the absorption buffer layer 220 absorbs at least 99% of the incident first electromagnetic radiation that propagates through the absorption buffer layer 220, and most preferably, the absorption buffer layer 220 absorbs at least 99.9% of the incident first electromagnetic radiation that propagates through the absorption buffer layer 220. The absorbing buffer layer 220 is preferably disposed on the side of the substrate 210 facing the light source 10 between the photovoltaic elements 200. In particular, the absorbing buffer layer 220 covers at least the lateral portion between adjacent photovoltaic elements 200.

Thus, even slight lateral and/or rotational and/or non-planar misalignments of the light source 10 relative to the photovoltaic module 20 can be tolerated, since the absorbing buffer layer 220 prevents the generation of undesired free charge carriers in the substrate 210.

FIG4 illustrates a cross-sectional view of a substrate 210 of a photovoltaic module 20 according to a second exemplary embodiment. The detailed view of FIG4 illustrates incident first electromagnetic radiation on the photovoltaic module 20. The photovoltaic module 20 includes an absorption buffer layer 220 disposed on the substrate 210 of the photovoltaic module 20. The absorption buffer layer 220 is disposed on the side of the substrate 210 facing the light source 10 emitting the first electromagnetic radiation. The first electromagnetic radiation is preferably at least partially absorbed in the absorption buffer layer 220 and thus does not reach the substrate 210 at its full intensity. For example, after propagating through the absorption buffer layer 220, less than 0.1% of the intensity of the first electromagnetic radiation reaches the substrate 210. Preferably, the first electromagnetic radiation is completely absorbed in the absorption buffer layer 220 and does not reach the substrate 210.

FIG5 is a graph showing the optical transmittance of the absorption buffer layer 220 of the photovoltaic module 20 according to the second exemplary embodiment. The graph illustrates the optical intensity of the first electromagnetic radiation as it propagates through the absorption buffer layer 220. As the propagation distance d increases, the intensity decreases dramatically. After propagating through a distance d of 0.5 μm, less than 20% of the initial intensity of the first electromagnetic radiation remains.

FIG6 shows a cross-sectional view of a photovoltaic semiconductor module 1 according to a second exemplary embodiment. The second exemplary embodiment is essentially the same as the first exemplary embodiment shown in FIG3 .

Additionally, the optoelectronic semiconductor module 1 includes a light diffusing element 30 disposed between the light source 10 and the photovoltaic module 20. Preferably, the light diffusing element 30 blocks any direct connection of the light beam propagating between the light source 10 and the photovoltaic module 20.

The light diffusing element 30 is configured to diffuse the first electromagnetic radiation. In particular, the light diffusing element 30 diffuses light in a manner to transmit soft light. The light diffusing element 30 may be, for example, a refractive element, a diffractive element, or an element pattern for the first electromagnetic radiation. In particular, the light diffusing element 30 is transparent to the first electromagnetic radiation.

The light diffusion element 30 enables uniform illumination of the photovoltaic module 20, while the absorption buffer layer 220 prevents illumination of the substrate 210 to avoid leakage current in the substrate.

FIG7 shows a cross-sectional view of a photovoltaic semiconductor module 1 according to a third exemplary embodiment. The third exemplary embodiment is substantially the same as the second exemplary embodiment shown in FIG6 . However, the number of semiconductor emitters 100 is smaller than the number of photovoltaic elements 200. Alternatively, the light source 10 may include only semiconductor emitters 100 to illuminate a plurality of photovoltaic elements 200.

Furthermore, the maximum distance 30X between the diffuser element 30 and the light source 10 is at most 300 μm, preferably at most 100 μm, and more preferably at most 20 μm. A short distance 30X between the light source 10 and the diffuser element 30 enables a particularly diffuse light emission. Furthermore, a small distance 30X between the diffuser element 30 and the light source 10 also requires a smaller diffuser element 30, since the light beam of the light source 10 diverges as the distance from the light source 10 increases.

FIG8 shows a cross-sectional view of an optoelectronic semiconductor module 1 according to a fourth exemplary embodiment. The fourth exemplary embodiment is essentially the same as the second exemplary embodiment shown in FIG6 . However, the semiconductor emitter 100 is disposed on a side of the substrate 110 facing away from the optoelectronic module 20. The substrate 110 is formed of a material that is translucent to the first electromagnetic radiation.

The light diffusing element 30 is attached to the light source 10. The first electromagnetic radiation propagates through the substrate 110 and then through the light diffusing element 30 before reaching the photovoltaic module 20. This photovoltaic semiconductor module 1 can also be called a bottom-emitting device.

The invention described herein is not limited to the description given with reference to the exemplary embodiments. On the contrary, the invention covers any novel feature and any combination of features, including in particular any feature in the scope of the patent application, even if the feature or combination itself is not explicitly indicated in the scope of the patent application or the exemplary embodiments.

This patent application claims priority to U.S. Provisional Patent Application No. 63/498,532, the disclosure of which is incorporated herein by reference.

1: Optoelectronic semiconductor module

10: Light Source

100:Semiconductor emitter

110: Matrix

20: Photovoltaic special module

200: Photovoltaic special components

210:Substrate

220: Absorption buffer layer

Claims (18)

A photoelectric semiconductor module (1) comprises: a light source (10) having at least one semiconductor emitter (100); and a photovoltaic module (20) having at least one photovoltaic element (200) disposed on a substrate (210), wherein the light source (10) is configured to emit first electromagnetic radiation, and the photovoltaic module (20) is configured to convert at least a portion of the optical power of the first electromagnetic radiation into electrical power; and the photovoltaic module (20) comprises an absorption buffer layer (220). The optoelectronic semiconductor module (1) as claimed in claim 1 further comprises: a light diffusion element (30) disposed between the light source (10) and the photovoltaic module (20), wherein the light diffusion element (30) is configured to diffuse the first electromagnetic radiation. The optoelectronic semiconductor module (1) as claimed in claim 1 or 2, wherein the semiconductor emitter (100) is a VCSEL. The optoelectronic semiconductor module (1) as claimed in claim 1 or 2, wherein the semiconductor emitter (100) is a light-emitting diode. The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the light source (10) comprises only one semiconductor emitter (100). The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the light source (10) includes a plurality of semiconductor emitters (100). The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the photovoltaic module (20) includes a plurality of photovoltaic elements (200). The optoelectronic semiconductor module (1) as claimed in claim 7, wherein each photovoltaic element (200) is assigned to one of the semiconductor emitters (100). The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the absorption buffer layer (220) is formed epitaxially. The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the absorption buffer layer (220) is formed of a material having an energy gap (Eg) lower than the energy of the first electromagnetic radiation. The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the absorption buffer layer (220) is formed of a material having a light absorption coefficient of at least 5000 cm ^-1 . The optoelectronic semiconductor module (1) as claimed in claim 1, wherein the absorption buffer layer (220) is formed of one of the following materials: gallium antimonide, aluminum arsenide, indium gallium arsenide, aluminum gallium arsenide, or a combination thereof. The optoelectronic semiconductor module (1) as claimed in claim 2, wherein the maximum distance (30X) between the light diffusion element (30) and the light source (10) is at most 300 μm. The optoelectronic semiconductor module (1) as claimed in claim 2, wherein the maximum distance (30X) between the light diffusion element (30) and the light source (10) is at most 100 μm. The optoelectronic semiconductor module (1) as claimed in claim 2, wherein the maximum distance (30X) between the light diffusion element (30) and the light source (10) is at most 20 μm. The optoelectronic semiconductor module (1) as claimed in claim 2, wherein the light diffusion element (30) is connected to the light source (10). The optoelectronic semiconductor module (1) as described in claim 2, wherein the light diffusion element (30) includes at least one microlens. The optoelectronic semiconductor module (1) as claimed in claim 2, wherein the light diffusion element (30) is formed of at least one of the following materials: polymer, glass, metamaterial.