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TWI890925B - Method and apparatus for manufacturing substrates with wrap around electrodes - Google Patents

Method and apparatus for manufacturing substrates with wrap around electrodes

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Publication number
TWI890925B
TWI890925B TW111104694A TW111104694A TWI890925B TW I890925 B TWI890925 B TW I890925B TW 111104694 A TW111104694 A TW 111104694A TW 111104694 A TW111104694 A TW 111104694A TW I890925 B TWI890925 B TW I890925B
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Taiwan
Prior art keywords
substrate
major surface
electrodes
depositing
edge surface
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TW111104694A
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Chinese (zh)
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TW202303913A (en
Inventor
李察 哈根
克迪丹尼爾 修泰森
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美商康寧公司
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Publication of TW202303913A publication Critical patent/TW202303913A/en
Application granted granted Critical
Publication of TWI890925B publication Critical patent/TWI890925B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor
    • C03C17/002General methods for coating; Devices therefor for flat glass, e.g. float glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W90/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coating Apparatus (AREA)
  • Power Engineering (AREA)
  • Surface Treatment Of Glass (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Overhead Projectors And Projection Screens (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

A method and apparatus of manufacturing a display tile includes depositing a first portion of an electrode on a first major surface and an edge surface of a substrate and depositing a second portion of the electrode on an opposing second major surface and the edge surface of the substrate. The electrode extends along a portion of a first major surface, an edge surface, and a portion of a second major surface of the substrate.

Description

用於製造具有包覆圍繞電極的基板的方法及設備Method and apparatus for manufacturing a substrate having a wrap-around electrode

本申請案依專利法主張2021年2月10日申請的美國臨時申請案第63/147,854號及2021年6月3日申請的美國臨時申請案第63/196,360號的優先權權益,本文依賴於該些美國臨時申請案的內容並且該些美國臨時申請案的內容以全文引用的方式併入本文。This application claims the benefit of priority under patent law to U.S. Provisional Application No. 63/147,854, filed on February 10, 2021, and U.S. Provisional Application No. 63/196,360, filed on June 3, 2021, and this application relies upon and is incorporated herein by reference in its entirety.

本揭示案大體而言係關於用於製造具有包覆圍繞電極的基板的方法及設備,並且更特別地,係關於使用氣溶膠噴流來製造具有包覆圍繞電極的基板的方法及設備。The present disclosure relates generally to methods and apparatus for fabricating substrates having wrapped surrounding electrodes, and more particularly, to methods and apparatus for fabricating substrates having wrapped surrounding electrodes using aerosol jetting.

諸如微LED顯示器的顯示器包括無框線、無邊框及/或鋪瓦(tiled)式顯示器。頂部發射微LED顯示器要求一種用於電互連基板頂表面上的LED與位於基板後面的驅動器控制器板的方法。此可以藉由使用附接在基板邊緣處的撓曲連接器來完成。然而,在無框線、無邊框或鋪瓦式顯示器的狀況下,不期望使用附接至基板頂表面的撓曲連接器。在此類狀況下,撓曲連接器要麼對觀看者可見並且需要藉由邊框來隱藏,要麼撓曲連接器佔據瓦片之間的過多空間並且阻礙無縫鋪瓦。一種電連接顯示器基板頂表面與驅動器控制器板的解決方案為利用包覆圍繞電極。Displays such as micro-LED displays include frameless, bezel-less and/or tiled displays. Top-emitting micro-LED displays require a method for electrically interconnecting the LEDs on the top surface of the substrate with the driver controller board located behind the substrate. This can be accomplished by using flex connectors attached at the edge of the substrate. However, in the case of frameless, bezel-less or tiled displays, it is undesirable to use flex connectors attached to the top surface of the substrate. In such cases, the flex connectors are either visible to the viewer and need to be hidden by the bezel, or the flex connectors take up too much space between the tiles and prevent seamless tiling. One solution for electrically connecting the top surface of a display substrate to a driver controller board is to utilize wraparound electrodes.

包覆圍繞電極可圍繞基板邊緣製造。此使得該些包覆圍繞電極佔據較少實體空間,並且在視覺上不那麼顯眼。包覆圍繞電極已利用無框線、無邊框及鋪瓦式顯示器來證實。此類電極可包含多種材料,並且藉由包括列印、真空沉積、撓曲連接以及電鍍的方法來製造。用以改進包覆圍繞電極的電效能及可靠性的方法係經由材料及製程改進來實現。Wrap-around electrodes can be fabricated around the edge of a substrate. This allows them to occupy less physical space and be less visually obtrusive. Wrap-around electrodes have been demonstrated in frameless, bezel-less, and tiled displays. These electrodes can be made from a variety of materials and fabricated using methods including printing, vacuum deposition, flexure bonding, and electroplating. Improvements in materials and processes are being used to improve the electrical performance and reliability of wrap-around electrodes.

本文所揭示的實施例包括一種製造顯示器瓦片的方法。方法包括將電極的第一部分沉積至基板的第一主表面及邊緣表面上。方法包括將電極的第二部分沉積至基板的相對第二主表面及邊緣表面上。第一主表面在大致平行於第二主表面的方向上延伸,並且邊緣表面在第一主表面與第二主表面之間延伸。另外,電極沿著基板的第一主表面的部分、邊緣表面以及第二主表面的部分延伸。Embodiments disclosed herein include a method for manufacturing a display tile. The method includes depositing a first portion of an electrode onto a first major surface and an edge surface of a substrate. The method includes depositing a second portion of the electrode onto an opposing second major surface and an edge surface of the substrate. The first major surface extends in a direction generally parallel to the second major surface, and the edge surface extends between the first major surface and the second major surface. Furthermore, the electrode extends along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate.

本文所揭示的實施例亦包括一種用於製造顯示器瓦片的設備。設備包括第一孔口,該第一孔口用以將第一氣溶膠噴流導向基板的第一主表面及邊緣表面。設備亦包括第二孔口,該第二孔口用以將第二氣溶膠噴流導向基板的相對第二主表面及邊緣表面。第一主表面在大致平行於第二主表面的方向上延伸,並且邊緣表面在第一主表面與第二主表面之間延伸。另外,第一氣溶膠噴流用以將電極的第一部分沉積至基板的第一主表面及邊緣表面上,並且第二氣溶膠噴流用以將電極的第二部分沉積至基板的第二主表面及邊緣表面上。Embodiments disclosed herein also include an apparatus for manufacturing display tiles. The apparatus includes a first orifice for directing a first aerosol jet toward a first major surface and an edge surface of a substrate. The apparatus also includes a second orifice for directing a second aerosol jet toward an opposing second major surface and an edge surface of the substrate. The first major surface extends in a direction generally parallel to the second major surface, and the edge surface extends between the first major surface and the second major surface. In addition, the first aerosol jet is used to deposit a first portion of an electrode onto the first major surface and the edge surface of the substrate, and the second aerosol jet is used to deposit a second portion of the electrode onto the second major surface and the edge surface of the substrate.

本文所揭示的實施例的額外特徵及優勢將在隨後的詳細描述中闡述,並且熟習此項技術者自該描述將顯而易見或藉由實踐如本文(包括隨後的詳細描述、申請專利範圍以及附隨圖式)所描述的揭示實施例來識別額外特徵及優勢的部分。Additional features and advantages of the embodiments disclosed herein will be set forth in the detailed description that follows, and those skilled in the art will in part be obvious from that description or will recognize additional features and advantages by practicing the disclosed embodiments as described herein (including the following detailed description, claims, and accompanying drawings).

應瞭解,當前實施例的前述大體描述及以下詳細描述意在提供概述或框架以便瞭解所主張實施例的本質及特性。包括附隨圖式以提供進一步瞭解,並且附隨圖式併入本說明書並構成其部分。圖式說明本揭示案的各種實施例,並且與描述一起用以解釋其原理及操作。It should be understood that the foregoing general description and the following detailed description of the present embodiments are intended to provide an overview or framework for understanding the nature and character of the claimed embodiments. The accompanying drawings are included to provide a further understanding and are incorporated into and constitute a part of this specification. The drawings illustrate various embodiments of the present disclosure and, together with the description, serve to explain the principles and operation thereof.

現將詳細參照本揭示案的當前較佳實施例,該些實施例的實例說明於附隨圖式中。無論何時,圖式中自始至終使用相同元件符號來意指相同或類似零件。然而,本揭示案可以以許多不同的形式來實施,並且不應理解為限於本文所闡述的實施例。Reference will now be made in detail to the presently preferred embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts. However, the present disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

範圍可在本文中表達為自「約」一個特定值及/或至「約」另一特定值。當表達此類範圍時,另一實施例包括自一個特定值及/或至另一特定值。類似地,當值例如藉由使用先行詞「約」表達為近似時,應瞭解,特定值形成另一實施例。應進一步瞭解,範圍中的每一範圍的端點與另一端點相關時有意義,而獨立於另一端點時亦有意義。Ranges may be expressed herein as from "about" one particular value and/or to "about" another particular value. When such a range is expressed, another embodiment includes from the one particular value and/or to the other particular value. Similarly, when values are expressed as approximate, for example, by use of the antecedent "about," it should be understood that the particular value forms another embodiment. It should be further understood that the endpoints of each range are meaningful both in relation to the other endpoint and independently of the other endpoint.

如本文所使用的方向術語(例如,上、下、右、左、前、後、頂部、底部)僅參照如圖所繪製的附圖,並且並非意在暗指絕對定向。Directional terms as used herein (eg, up, down, right, left, front, back, top, bottom) refer only to the drawings as they are drawn and are not intended to imply an absolute orientation.

除非另外明確陳述,否則完全並非意在本文所陳闡述的任何方法理解為要求步驟以具體次序執行,亦完全並非意在要求藉由任何特定於設備的定向。因此,在方法請求項實際上沒有列舉其步驟所遵循的次序,或任何設備請求項實際上沒有列舉個別部件的次序或定向,或在請求項或描述中沒有以其他方式具體陳述步驟受限於具體次序,或沒有列舉設備部件的具體次序或定向的情況下,完全並非意在在任何方面推斷次序或定向。此適用於解譯的任何可能的未表達,包括:相對於步驟、操作流程、部件次序或部件定向的佈置的邏輯事項;自語法結構或標點符號導出的普通含義;以及說明書中所描述的實施例的數目或類型。Unless otherwise expressly stated, it is not intended that any method described herein be understood as requiring that steps be performed in a specific order, nor is it intended to require any particular orientation of the apparatus. Thus, if a method claim does not actually list an order in which its steps must be performed, or if any apparatus claim does not actually list an order or orientation of individual components, or if the claim or description does not otherwise specifically state that steps are subject to a specific order, or does not list a specific order or orientation of apparatus components, no order or orientation is intended to be inferred in any way. This applies to any possible non-expression of the interpretation, including: logical matters with respect to arrangement of steps, operational flow, order of components, or orientation of components; ordinary meaning derived from grammatical structure or punctuation; and the number or type of embodiments described in the specification.

如本文所使用,除非上下文另外明確說明,否則單數形式「一個/種(a/an)」、及「該/該些(the)」包括複數指示物。因此,例如,除非上下文另外明確說明,否則參照「一個」部件包括具有兩個或更多個此類部件的態樣。As used herein, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a" element includes aspects of having two or more such elements unless the context clearly dictates otherwise.

第1圖展示示例性玻璃製造設備10。在一些實例中,玻璃製造設備10可包含玻璃熔融爐12,該玻璃熔融爐12可包括熔融槽14。除了熔融槽14,玻璃熔融爐12可任選地包括一或多個額外部件,諸如,加熱原始材料並且將原始材料轉化為熔融玻璃的加熱元件(例如,燃燒鍋爐或電極)。在進一步實例中,玻璃熔融爐12可以包括用於降低熔融槽附近的熱損失的熱管理裝置(例如,絕熱部件)。在另外的進一步實例中,玻璃熔融爐12可以包括有助於將原始材料熔融為玻璃熔態的電子裝置及/或電磁裝置。更進一步,玻璃熔融爐12可以包括支撐結構(例如,支撐底盤、支撐構件等)或其他部件。FIG1 illustrates an exemplary glassmaking apparatus 10. In some examples, the glassmaking apparatus 10 may include a glass melting furnace 12, which may include a melting tank 14. In addition to the melting tank 14, the glass melting furnace 12 may optionally include one or more additional components, such as heating elements (e.g., a furnace or electrodes) that heat the raw material and convert it into molten glass. In further examples, the glass melting furnace 12 may include a thermal management device (e.g., an insulating component) to reduce heat loss near the melting tank. In yet further examples, the glass melting furnace 12 may include electronic devices and/or electromagnetic devices that assist in melting the raw material into molten glass. Furthermore, the glass melting furnace 12 may include a support structure (e.g., a support base, support members, etc.) or other components.

玻璃熔融槽14通常包含耐火材料,諸如,耐火陶瓷材料,例如,包含氧化鋁或氧化鋯的耐火陶瓷材料。在一些實例中,玻璃熔融槽14可以由耐火陶瓷磚構造。玻璃熔融槽14的具體實施例將在下文更詳細描述。The glass melting tank 14 generally comprises a refractory material, such as a refractory ceramic material, for example, a refractory ceramic material comprising aluminum oxide or zirconium oxide. In some embodiments, the glass melting tank 14 can be constructed of refractory ceramic bricks. Specific embodiments of the glass melting tank 14 will be described in more detail below.

在一些實例中,玻璃熔融爐可以作為玻璃製造設備的部件併入,以便製造玻璃片,例如,連續長度的玻璃帶。在一些實例中,本揭示案的玻璃熔融爐可以作為玻璃製造設備的部件併入,該玻璃製造設備包含拉縫設備、浮式浴槽設備、下拉設備(諸如,熔合製程)、上拉設備、壓輥設備、拉管設備或可得益於本文所揭示的態樣的任何其他玻璃製造設備。舉例而言,第1圖示意性地說明作為熔合下拉玻璃製造設備10的部件的玻璃熔融爐12,該熔合下拉玻璃製造設備10用於熔合拉製玻璃帶以供後續處理為個別玻璃片。In some examples, a glass melting furnace can be incorporated as a component of a glassmaking apparatus for producing glass sheets, e.g., continuous lengths of glass ribbon. In some examples, the glass melting furnaces of the present disclosure can be incorporated as a component of a glassmaking apparatus, including a slotting apparatus, a floating bath apparatus, a downdraw apparatus (e.g., a fusion process), an updraw apparatus, a roll apparatus, a tube drawing apparatus, or any other glassmaking apparatus that can benefit from the aspects disclosed herein. For example, FIG. 1 schematically illustrates a glass melting furnace 12 as a component of a fusion downdraw glassmaking apparatus 10 for fusing drawn glass ribbons for subsequent processing into individual glass sheets.

玻璃製造設備10 (例如,熔合下拉設備10)可任選地包括相對於玻璃熔融槽14定位在上游的上游玻璃製造設備16。在一些實例中,上游玻璃製造設備16的部分或整體可以作為玻璃熔融爐12的部分併入。The glassmaking apparatus 10 (e.g., fusion downdraw apparatus 10) may optionally include an upstream glassmaking apparatus 16 positioned upstream relative to the glass melting tank 14. In some examples, part or all of the upstream glassmaking apparatus 16 may be incorporated as part of the glass melting furnace 12.

如所說明的實例所示,上游玻璃製造設備16可包括儲存箱18、原始材料遞送裝置20以及連接至原始材料遞送裝置的電動機22。儲存箱18可以用以儲存一定量的原始材料24,該一定量的原始材料24可如箭頭26所指示饋送至玻璃熔融爐12的熔融槽14。原始材料24通常包含一或多種玻璃形成金屬氧化物及一或多種修飾劑。在一些實例中,原始材料遞送裝置20可由電動機22供電,以使得原始材料遞送裝置20將預定量的原始材料24自儲存箱18遞送至熔融槽14。在進一步實例中,電動機22可向原始材料遞送裝置20供電,以便基於熔融槽14下游感測的熔融玻璃的位準而以受控速率引入原始材料24。此後,熔融槽14內的原始材料24可經加熱以形成熔融玻璃28。As shown in the illustrated example, the upstream glassmaking equipment 16 may include a storage tank 18, a raw material delivery device 20, and a motor 22 connected to the raw material delivery device. The storage tank 18 may be used to store a quantity of raw material 24, which may be fed to the melting tank 14 of the glass melting furnace 12 as indicated by arrow 26. The raw material 24 typically includes one or more glass-forming metal oxides and one or more modifiers. In some examples, the raw material delivery device 20 may be powered by the motor 22 so that the raw material delivery device 20 delivers a predetermined quantity of raw material 24 from the storage tank 18 to the melting tank 14. In a further example, the motor 22 can power the raw material delivery device 20 to introduce the raw material 24 at a controlled rate based on the level of molten glass sensed downstream of the melting tank 14. Thereafter, the raw material 24 in the melting tank 14 can be heated to form molten glass 28.

玻璃製造設備10亦可任選地包括相對於玻璃熔融爐12定位在下游的下游玻璃製造設備30。在一些實例中,下游玻璃製造設備30的部分可以作為玻璃熔融爐12的部分併入。在一些例子中,下文所論述的第一連接導管32,或下游玻璃製造設備30的其他部分可以作為玻璃熔融爐12的部分併入。下游玻璃製造設備的元件(包括第一連接導管32)可以由貴金屬製成。適當貴金屬包括選自由以下族金屬組成的鉑族金屬:鉑、銥、銠、鋨、釕及鈀,或其合金。例如,玻璃製造設備的下游部件可以由包括自約70 wt.%至約90 wt.%的鉑及自約10 wt.%至約30 wt.%的銠的鉑-銠合金製成。然而,其他適當金屬可包括鉬、鈀、錸、鉭、鈦、鎢及其合金。The glassmaking apparatus 10 may also optionally include a downstream glassmaking apparatus 30 positioned downstream relative to the glass melting furnace 12. In some examples, portions of the downstream glassmaking apparatus 30 may be incorporated as part of the glass melting furnace 12. In some instances, the first connecting conduit 32 discussed below, or other portions of the downstream glassmaking apparatus 30, may be incorporated as part of the glass melting furnace 12. Components of the downstream glassmaking apparatus, including the first connecting conduit 32, may be made of a precious metal. Suitable precious metals include a platinum group metal selected from the group consisting of platinum, iridium, rhodium, zirconium, ruthenium, and palladium, or alloys thereof. For example, downstream components of glassmaking equipment can be made of a platinum-rhodium alloy comprising from about 70 wt.% to about 90 wt.% platinum and from about 10 wt.% to about 30 wt.% rhodium. However, other suitable metals may include molybdenum, palladium, arsenic, tungsten, titanium, and alloys thereof.

下游玻璃製造設備30可包括第一調節(亦即,處理)槽,諸如精煉槽34,該第一調節槽位於熔融槽14下游並且藉助上文參照的第一連接導管32耦接至熔融槽14。在一些實例中,熔融玻璃28可以藉助第一連接導管32自熔融槽14重力饋送至精煉槽34。例如,重力可以致使熔融玻璃28自熔融槽14經由第一連接導管32的內部途徑傳遞至精煉槽34。然而,應瞭解,其他調節槽可以定位在熔融槽14下游,例如,在熔融槽14與精煉槽34之間。在一些實施例中,調節槽可以採用於熔融槽與精煉槽之間,其中來自主要熔融槽的熔融玻璃經進一步加熱以繼續熔融製程,或在進入精煉槽之前經冷卻至低於熔融槽中熔融玻璃的溫度的溫度。The downstream glassmaking equipment 30 can include a first conditioning (i.e., processing) tank, such as a finishing tank 34, located downstream from the melting tank 14 and coupled to the melting tank 14 via the first connecting conduit 32 referenced above. In some examples, the molten glass 28 can be gravity-fed from the melting tank 14 to the finishing tank 34 via the first connecting conduit 32. For example, gravity can cause the molten glass 28 to pass from the melting tank 14 to the finishing tank 34 via an internal path of the first connecting conduit 32. However, it should be understood that other conditioning tanks can be positioned downstream from the melting tank 14, for example, between the melting tank 14 and the finishing tank 34. In some embodiments, a conditioning tank may be employed between the melting tank and the finishing tank, wherein the molten glass from the main melting tank is further heated to continue the melting process, or is cooled to a temperature lower than the temperature of the molten glass in the melting tank before entering the finishing tank.

來自精煉槽34內的熔融玻璃28的氣泡可以藉由各種技術來移除。例如,原始材料24可以包括多價化合物(亦即,精煉劑),諸如氧化錫,該多價化合物在經加熱時經受化學還原反應並且釋放氧氣。其他適當精煉劑包括但不限於砷、銻、鐵及鈰。精煉槽34經加熱至高於熔融槽溫度的溫度,從而加熱熔融玻璃及精煉劑。由精煉劑的溫度誘發的化學還原產生的氧氣氣泡在精煉槽內的熔融玻璃中上升,其中熔融玻璃中在熔融爐中形成的氣體可擴散或聚結至由精煉劑形成的氧氣氣泡中。隨後,放大的氣體氣泡可上升至精煉槽中熔融玻璃的自由表面,並且此後排出精煉槽。氧氣氣泡可進一步誘發精煉槽中熔融玻璃的機械混合。Bubbles from the molten glass 28 in the refining tank 34 can be removed by various techniques. For example, the starting material 24 may include a polyvalent compound (i.e., a refining agent), such as tin oxide, which undergoes a chemical reduction reaction when heated and releases oxygen. Other suitable refining agents include, but are not limited to, arsenic, antimony, iron, and barium. The refining tank 34 is heated to a temperature higher than the melting tank temperature, thereby heating the molten glass and the refining agent. Oxygen bubbles generated by the chemical reduction induced by the temperature of the refining agent rise in the molten glass in the refining tank, where gases formed in the molten glass in the melting furnace can diffuse or coalesce into the oxygen bubbles formed by the refining agent. The enlarged gas bubbles can then rise to the free surface of the molten glass in the refining tank and thereafter exit the refining tank. The oxygen bubbles can further induce mechanical mixing of the molten glass in the refining tank.

下游玻璃製造設備30可進一步包括另一調節槽,諸如,用於混合熔融玻璃的混合槽36。混合槽36可以位於精煉槽34下游。混合槽36可用以提供均質的玻璃熔體組合物,從而減少化學或熱不均勻性的條紋,該些化學或熱不均勻性的條紋原本可能會存在於離開精煉槽的經精煉熔融玻璃內。如圖所示,精煉槽34可以藉助第二連接導管38耦接至混合槽36。在一些實例中,熔融玻璃28可以藉助第二連接導管38自精煉槽34重力饋送至混合槽36。例如,重力可以致使熔融玻璃28自精煉槽34經由第二連接導管38的內部途徑傳遞至混合槽36。應注意,儘管混合槽36展示為位於精煉槽34下游,混合槽36可以定位在精煉槽34上游。在一些實施例中,下游玻璃製造設備30可以包括多個混合槽,例如,位於精煉槽34上游的混合槽及位於精煉槽34下游的混合槽。這些多個混合槽可以具有相同設計,或者可以具有不同設計。The downstream glassmaking equipment 30 may further include another conditioning tank, such as a mixing tank 36 for mixing the molten glass. The mixing tank 36 may be located downstream of the refining tank 34. The mixing tank 36 may be used to provide a homogenous glass melt composition, thereby reducing streaks of chemical or thermal inhomogeneities that may otherwise exist in the refined molten glass leaving the refining tank. As shown, the refining tank 34 may be coupled to the mixing tank 36 via a second connecting conduit 38. In some examples, the molten glass 28 may be gravity fed from the refining tank 34 to the mixing tank 36 via the second connecting conduit 38. For example, gravity may cause the molten glass 28 to be transferred from the refining tank 34 to the mixing tank 36 via an internal path of the second connecting conduit 38. It should be noted that although the mixing tank 36 is shown as being located downstream of the refining tank 34, the mixing tank 36 may be positioned upstream of the refining tank 34. In some embodiments, the downstream glassmaking apparatus 30 may include multiple mixing tanks, for example, a mixing tank located upstream of the refining tank 34 and a mixing tank located downstream of the refining tank 34. These multiple mixing tanks may have the same design or may have different designs.

下游玻璃製造設備30可進一步包括另一調節槽,諸如,可以位於混合槽36下游的遞送槽40。遞送槽40可以調節待饋送至下游形成裝置中的熔融玻璃28。例如,遞送槽40可充當聚集器及/或流量控制器,以便調整一致流量的熔融玻璃28及/或藉助出口導管44提供至形成主體42。如圖所示,混合槽36可以藉助第三連接導管46耦接至遞送槽40。在一些實例中,熔融玻璃28可以藉助第三連接導管46自混合槽36重力饋送至遞送槽40。例如,重力可以將熔融玻璃28自混合槽36經由第三連接導管46的內部途徑驅動至遞送槽40。The downstream glassmaking apparatus 30 may further include another conditioning tank, such as a delivery tank 40, which may be located downstream of the mixing tank 36. The delivery tank 40 may condition the molten glass 28 to be fed to the downstream forming device. For example, the delivery tank 40 may act as a collector and/or flow controller to regulate a consistent flow of molten glass 28 and/or provide it to the forming body 42 via the outlet conduit 44. As shown, the mixing tank 36 may be coupled to the delivery tank 40 via a third connecting conduit 46. In some examples, the molten glass 28 may be gravity-fed from the mixing tank 36 to the delivery tank 40 via the third connecting conduit 46. For example, gravity may drive the molten glass 28 from the mixing tank 36 through the internal path of the third connecting conduit 46 to the delivery tank 40.

下游玻璃製造設備30可進一步包括形成設備48,該形成設備48包含上文參照的形成主體42及入口導管50。出口導管44可經定位以將熔融玻璃28自遞送槽40遞送至形成設備48的入口導管50。例如,出口導管44可以套疊在入口導管50的內表面內並且與之間隔開,從而提供經定位在出口導管44的外表面與入口導管50的內表面之間的熔融玻璃的自由表面。熔合下拉玻璃製作設備中的形成主體42可包含經定位在形成主體的上表面及會聚形成表面54上的溝槽52,該會聚形成表面54沿著形成主體的底部邊緣56在拉製方向上會聚。經由遞送槽40、出口導管44及入口導管50遞送至形成主體溝槽的熔融玻璃溢流出溝槽的側壁,並且沿著會聚形成表面54下降為熔融玻璃的獨立流。熔融玻璃的獨立流沿著底部邊緣56在下方匯合,以便形成單個玻璃帶58,該單個玻璃帶58係藉由施加張力(諸如,藉由重力、邊緣輥72以及牽引輥82)至玻璃帶以在拉製或流動方向60上自底部邊緣56拉製,以便當玻璃冷卻並且玻璃黏度增大時控制玻璃帶的尺寸。因此,玻璃帶58經歷黏-彈轉變,並且獲取賦予玻璃帶58穩定尺寸特性的機械性質。在一些實施例中,玻璃帶58可以藉由玻璃帶的彈性區域中的玻璃分離設備90分離為個別玻璃片62。隨後,機器人64可以使用抓握工具65將個別玻璃片62轉移至輸送機系統,隨之個別玻璃片可以經進一步處理。例如,玻璃片62可以經進一步處理至如本文所描述一或多個基板100上。The downstream glassmaking apparatus 30 may further include a forming apparatus 48 including the forming body 42 and an inlet conduit 50 referenced above. An outlet conduit 44 may be positioned to deliver the molten glass 28 from the delivery trough 40 to the inlet conduit 50 of the forming apparatus 48. For example, the outlet conduit 44 may be nested within and spaced apart from the inner surface of the inlet conduit 50, thereby providing a free surface of molten glass positioned between the outer surface of the outlet conduit 44 and the inner surface of the inlet conduit 50. The forming body 42 in the fusion down-draw glassmaking apparatus may include grooves 52 positioned on an upper surface of the forming body and converging forming surfaces 54 that converge in the draw direction along a bottom edge 56 of the forming body. Molten glass delivered to the main channel via the delivery trough 40, outlet conduit 44, and inlet conduit 50 overflows the sides of the channel and descends along the converging forming surface 54 as separate streams of molten glass. The separate streams of molten glass converge below along the bottom edge 56 to form a single glass ribbon 58. The single glass ribbon 58 is drawn from the bottom edge 56 in a draw or flow direction 60 by applying tension (e.g., by gravity, edge rollers 72, and draw rollers 82) to the glass ribbon to control the dimensions of the glass ribbon as the glass cools and its viscosity increases. As a result, the glass ribbon 58 undergoes a viscoelastic transition and acquires mechanical properties that impart stable dimensional characteristics to the glass ribbon 58. In some embodiments, the glass ribbon 58 can be separated into individual glass sheets 62 by a glass separation device 90 in the elastic region of the glass ribbon. A robot 64 can then use a gripping tool 65 to transfer the individual glass sheets 62 to a conveyor system, where they can be further processed. For example, the glass sheets 62 can be further processed onto one or more substrates 100 as described herein.

第2圖展示基板100的透視圖,該基板100具有第一主表面102、在與第一主表面102大致平行的方向上延伸的相對第二主表面104 (在基板100的與第一主表面相對的側面上),以及在第一主表面102與第二主表面104之間延伸並且在與第一主表面102及第二主表面104大致垂直的方向上延伸的邊緣表面106。FIG2 shows a perspective view of a substrate 100 having a first major surface 102, an opposite second major surface 104 (on a side of the substrate 100 opposite the first major surface) extending in a direction substantially parallel to the first major surface 102, and an edge surface 106 extending between the first major surface 102 and the second major surface 104 and extending in a direction substantially perpendicular to the first major surface 102 and the second major surface 104.

在某些示例性實施例中,基板100可包含玻璃,諸如,由玻璃片62製成的基板100。In certain exemplary embodiments, the substrate 100 may include glass, such as the substrate 100 formed from a glass sheet 62.

第3圖展示以相對於沉積孔口300的斜角定向來定位的基板100上的電極沉積的透視圖。如第3圖所示,複數個接觸襯墊202經佈置在基板100的主表面上,並且複數個電極204的至少部分經沉積至接觸襯墊202、基板100的主表面及邊緣表面上。隨後,基板100可旋轉或翻轉,以便將複數個電極204的至少一部分沉積至基板100的相對主表面及邊緣表面上。例如,WO2019079253中揭示了其中基板可以相對於沉積孔口的各種角度來定向的電極沉積,該案的全部揭示內容以引用的方式併入本文。此類電極的沉積可藉由各種技術,包括但不限於列印晶種層電鍍、直接列印、鐳射誘發式金屬化、筆式分配以及氣溶膠噴流。FIG3 shows a perspective view of electrode deposition on a substrate 100 positioned at an oblique angle relative to a deposition orifice 300. As shown in FIG3, a plurality of contact pads 202 are disposed on a major surface of the substrate 100, and at least a portion of a plurality of electrodes 204 are deposited onto the contact pads 202, the major surface, and an edge surface of the substrate 100. Subsequently, the substrate 100 can be rotated or flipped to deposit at least a portion of the plurality of electrodes 204 onto the opposing major surface and edge surface of the substrate 100. For example, WO2019079253 discloses electrode deposition in which the substrate can be oriented at various angles relative to the deposition orifice, and the entire disclosure of that application is incorporated herein by reference. Such electrodes can be deposited by various techniques including, but not limited to, seed layer plating, direct printing, laser induced metallization, pen dispensing, and aerosol jetting.

本文所揭示的實施例包括電極經由一或多個氣溶膠噴流來沉積至基板上的實施例。例如,US20090061077中描述了氣溶膠噴流沉積,該案的全部揭示內容以引用的方式併入本文。此類沉積包括使用氣溶膠噴流以形成環形傳播噴流,該環形傳播噴流包含外部的鞘流流動及內部的含氣溶膠載體流動。在氣溶膠噴流製程中,氣溶膠氣流進入列印頭,較佳地直接在氣溶膠化製程之後或在傳遞通過加熱器組件之後,並且沿著裝置的軸線導向列印頭孔口。質量產量可由氣溶膠載體氣體質量流量控制器來控制。在列印頭內部,氣溶膠氣流可藉由傳遞通過0.1毫米大小的孔口來準直。隨後,出射的粒子氣流可與環形鞘流氣體組合,此舉用以減少噴嘴的堵塞並集中氣溶膠氣流。載體氣體及鞘流氣體可以例如包含乾燥氮氣、壓縮空氣或惰性氣體,其中的一者或全部可以經改質以含有溶劑蒸汽。例如,當氣溶膠由含水溶液形成時,可添加水蒸氣至載體氣體或鞘流氣體,以便防止液滴蒸發。Embodiments disclosed herein include those in which electrodes are deposited onto a substrate via one or more aerosol jets. Aerosol jet deposition is described, for example, in US20090061077, the entire disclosure of which is incorporated herein by reference. Such deposition involves using an aerosol jet to form an annular propagating jet comprising an outer sheath flow and an inner aerosol-containing carrier flow. In an aerosol jet process, an aerosol stream enters a print head, preferably directly after an aerosolization process or after passing through a heater assembly, and is directed along the axis of the device toward a print head orifice. Mass throughput can be controlled by an aerosol carrier gas mass flow controller. Inside the printhead, the aerosol stream can be collimated by passing it through a 0.1 mm orifice. The exiting particle stream can then be combined with an annular sheath gas to reduce nozzle clogging and focus the aerosol stream. The carrier gas and sheath gas can, for example, comprise dry nitrogen, compressed air, or an inert gas, one or all of which can be modified to contain solvent vapor. For example, when the aerosol is formed from an aqueous solution, water vapor can be added to the carrier gas or sheath gas to prevent droplet evaporation.

隨後,鞘流氣體可以藉由在氣溶膠入口下方的鞘流空氣入口進入,並且與氣溶膠氣流形成環形流動。與氣溶膠載體氣體一樣,鞘流氣體流率可以藉由質量流量控制器來控制。組合的氣流以高速(例如,每秒50米)經由導向目標的孔口離開噴嘴,並且隨後撞上目標。此環形流將氣溶膠氣流集中至目標上,並且允許列印具有小於例如約1微米的尺寸的特徵。列印圖案可藉由相對於目標移動列印頭來創建。商業可購得的氣溶膠噴流列印頭、裝置及系統的實例包括可購自Optomec公司的氣溶膠噴流列印頭、裝置及系統。The sheath gas can then enter through a sheath air inlet below the aerosol inlet and form an annular flow with the aerosol stream. As with the aerosol carrier gas, the sheath gas flow rate can be controlled by a mass flow controller. The combined air stream leaves the nozzle at a high speed (e.g., 50 meters per second) through an orifice directed toward the target and then impacts the target. This annular flow focuses the aerosol stream onto the target and allows the printing of features having a size of less than, for example, about 1 micron. The print pattern can be created by moving the print head relative to the target. Examples of commercially available aerosol jet print heads, devices, and systems include aerosol jet print heads, devices, and systems available from Optomec.

第4圖展示上面沉積有包覆圍繞電極204的基板100的部分的側面剖面圖。具體地,電極204沿著基板100的第一主表面102的部分、邊緣表面106以及第二主表面104延伸,同時接觸接觸襯墊202。並且,儘管基板100的邊緣區域展示為具有矩形橫截面,本文所揭示的實施例包括基板100的邊緣區域具有其他橫截面的情況,包括但不限於包括彎曲或斜角(例如,倒角)區域(未示出)的情況。FIG4 shows a side cross-sectional view of a portion of the substrate 100 on which a wrap-around electrode 204 is deposited. Specifically, the electrode 204 extends along a portion of the first major surface 102, the edge surface 106, and the second major surface 104 of the substrate 100 while contacting the contact pad 202. Furthermore, while the edge region of the substrate 100 is shown as having a rectangular cross-section, embodiments disclosed herein encompass edge regions of the substrate 100 having other cross-sections, including but not limited to curved or beveled (e.g., chamfered) regions (not shown).

電極204可以包含導電材料,諸如,導電金屬性材料,包括例如選自銀或銅的至少一種材料。The electrode 204 may include a conductive material, such as a conductive metallic material, including at least one material selected from silver or copper.

第5圖展示根據本文所揭示的實施例的基板100上的電極沉積的側面透視圖。第10圖展示第5圖的圓形區『A』中基板100上的電極沉積的分解側面透視圖。如第5圖及第10圖所示,遮罩206經定位在基板100的第一主表面102及第二主表面104上。如第5圖及第10圖進一步所示,電極204a的第一部分204a1經沉積至基板100的第一主表面102及邊緣表面106上,並且電極204a的第二部分204a2經沉積至基板100的第二主表面104及邊緣表面106上。具體地,電極204a的第一部分204a1由自導向基板100的第一主表面102及邊緣表面106的第一孔口(例如,噴嘴) 300a發射的第一氣溶膠噴流來沉積,並且電極204a的第二部分204a2由自導向基板100的第二主表面104及邊緣表面106的第二孔口(例如,噴嘴) 300b發射的第二氣溶膠噴流來沉積。第一孔口300a經可移除地安裝在第一支架302a上,並且第二孔口300b經可移除地安裝在第二支架302b上。FIG5 shows a side perspective view of electrode deposition on substrate 100 according to embodiments disclosed herein. FIG10 shows an exploded side perspective view of electrode deposition on substrate 100 in circled area "A" of FIG5 . As shown in FIG5 and FIG10 , mask 206 is positioned over first major surface 102 and second major surface 104 of substrate 100. As further shown in FIG5 and FIG10 , first portion 204a1 of electrode 204a is deposited over first major surface 102 and edge surface 106 of substrate 100, and second portion 204a2 of electrode 204a is deposited over second major surface 104 and edge surface 106 of substrate 100. Specifically, a first portion 204a1 of the electrode 204a is deposited by a first aerosol jet emitted from a first orifice (e.g., nozzle) 300a directed toward the first major surface 102 and edge surface 106 of the substrate 100, and a second portion 204a2 of the electrode 204a is deposited by a second aerosol jet emitted from a second orifice (e.g., nozzle) 300b directed toward the second major surface 104 and edge surface 106 of the substrate 100. The first orifice 300a is removably mounted on a first support 302a, and the second orifice 300b is removably mounted on a second support 302b.

第6圖展示根據本文所揭示的實施例的基板100上的電極沉積的頂部透視圖。如自第5圖、第6圖及第10圖可見,第一複數個電極204a沿著基板100的第一主表面102的部分、邊緣表面106以及第二主表面104的部分延伸。另外,第二複數個電極204b沿著第一主表面102的部分、相對邊緣表面106以及基板100的第二主表面104的部分延伸。具體地,第二複數個電極204b由自第三孔口(例如,噴嘴) 300c發射的第三氣溶膠噴流及自第四孔口(例如,噴嘴) 300d發射的第四氣溶膠噴流來沉積。在某些示例性實施例中,在沉積第一複數個電極204a的同時,沉積第二複數個電極204b。第三孔口300c經可移除地安裝在第三支架302c上,並且第四孔口經可移除地安裝在第四支架302d上。FIG6 shows a top perspective view of electrode deposition on a substrate 100 according to embodiments disclosed herein. As can be seen in FIG5, FIG6, and FIG10, a first plurality of electrodes 204a extend along portions of the first major surface 102, the edge surface 106, and a portion of the second major surface 104 of the substrate 100. Additionally, a second plurality of electrodes 204b extend along portions of the first major surface 102, the opposing edge surface 106, and a portion of the second major surface 104 of the substrate 100. Specifically, the second plurality of electrodes 204b are deposited by a third aerosol jet emitted from a third orifice (e.g., nozzle) 300c and a fourth aerosol jet emitted from a fourth orifice (e.g., nozzle) 300d. In certain exemplary embodiments, the second plurality of electrodes 204b are deposited concurrently with the deposition of the first plurality of electrodes 204a. The third port 300c is removably mounted on the third support 302c, and the fourth port is removably mounted on the fourth support 302d.

第7圖展示根據本文所揭示的實施例的基板100上的電極沉積的端部透視圖。如自第6圖及第7圖可見,第三複數個電極204c沿著基板100的第一主表面102的部分、邊緣表面106以及第二主表面104的部分延伸。具體地,第三複數個電極204c由自第五孔口(例如,噴嘴) 300e發射的第五氣溶膠噴流及自第六孔口(例如,噴嘴) 300f發射的第六氣溶膠噴流來沉積。在某些示例性實施例中,在沉積第一複數個電極204a的同時,沉積第三複數個電極204c。第五孔口300e經可移除地安裝在第五支架302e上,並且第六孔口300f經可移除地安裝在第六支架302f上。FIG7 shows an end perspective view of electrode deposition on substrate 100 according to embodiments disclosed herein. As can be seen in FIG6 and FIG7 , a third plurality of electrodes 204 c extends along portions of first major surface 102, edge surface 106, and portions of second major surface 104 of substrate 100. Specifically, third plurality of electrodes 204 c are deposited by a fifth aerosol jet emitted from a fifth orifice (e.g., nozzle) 300 e and a sixth aerosol jet emitted from a sixth orifice (e.g., nozzle) 300 f. In certain exemplary embodiments, third plurality of electrodes 204 c are deposited concurrently with deposition of first plurality of electrodes 204 a. The fifth port 300e is removably mounted on the fifth bracket 302e, and the sixth port 300f is removably mounted on the sixth bracket 302f.

如自第7圖進一步可見,第四複數個電極204d沿著基板100的第一主表面102的部分、相對邊緣表面106以及第二主表面(未示出)的部分延伸。具體地,第四複數個電極204d由自第七孔口(例如,噴嘴) 300g發射的第七氣溶膠噴流及自第八孔口(例如,噴嘴) (未示出)發射的第八氣溶膠噴流來沉積。在某些示例性實施例中,在沉積第二複數個電極204b的同時,沉積第四複數個電極204d。第七孔口300g經可移除地安裝在第七支架302g上,並且第八孔口(未示出)經可移除地安裝在第八支架(未示出)上。As further shown in FIG. 7 , the fourth plurality of electrodes 204 d extends along portions of the first major surface 102, the opposing edge surface 106, and portions of the second major surface (not shown) of the substrate 100. Specifically, the fourth plurality of electrodes 204 d is deposited by a seventh aerosol jet emitted from a seventh orifice (e.g., nozzle) 300 g and an eighth aerosol jet emitted from an eighth orifice (e.g., nozzle) (not shown). In certain exemplary embodiments, the fourth plurality of electrodes 204 d is deposited simultaneously with the deposition of the second plurality of electrodes 204 b. The seventh orifice 300 g is removably mounted on a seventh support 302 g, and the eighth orifice (not shown) is removably mounted on an eighth support (not shown).

第11A圖及第11B圖各自展示根據本文所揭示的實施例的基板100上的電極沉積的端部透視圖。具體地,第11A圖及第11B圖展示第一複數個電極204a的第一部分204a1經沉積至基板100的第一主表面102及邊緣表面106上,並且第一複數個電極204a的第二部分204a2經沉積至基板100的第二主表面104及邊緣表面106上。更具體地,第一複數個電極204a的第一部分204a1由自第一孔口(例如,噴嘴) 300a發射的第一氣溶膠噴流來沉積至基板100的第一主表面102及邊緣表面106上,並且第一複數個電極204a的第二部分204a2由自第二孔口(例如,噴嘴) 300b發射的第二氣溶膠噴流來沉積至基板100的第二主表面104及邊緣表面106上。11A and 11B each show an end perspective view of electrode deposition on a substrate 100 according to embodiments disclosed herein. Specifically, FIG11A and FIG11B show a first portion 204a1 of a first plurality of electrodes 204a deposited onto the first major surface 102 and edge surface 106 of the substrate 100, and a second portion 204a2 of the first plurality of electrodes 204a deposited onto the second major surface 104 and edge surface 106 of the substrate 100. More specifically, a first portion 204a1 of the first plurality of electrodes 204a is deposited onto the first major surface 102 and the edge surface 106 of the substrate 100 by a first aerosol jet emitted from a first orifice (e.g., nozzle) 300a, and a second portion 204a2 of the first plurality of electrodes 204a is deposited onto the second major surface 104 and the edge surface 106 of the substrate 100 by a second aerosol jet emitted from a second orifice (e.g., nozzle) 300b.

在某些示例性實施例中,諸如第11A圖及第11B圖所示,第一複數個電極204a中的一者的第一部分204a1經沉積至基板100的第一主表面102及邊緣表面106上,並且第一複數個電極204a中的一者的第二部分204a2經同時沉積至基板100的第二主表面104及邊緣表面106上。如第11A圖所示,第一部分204a1及第二部分204a2為同一電極的部分。如第11B圖(第7圖的圓形區『B』的分解圖)所示,第一部分204a1及第二部分204a2為不同電極的部分(亦即,第一孔口300a及第二孔口300b處於交錯構型)。In certain exemplary embodiments, as shown in FIG. 11A and FIG. 11B , a first portion 204a1 of one of the first plurality of electrodes 204a is deposited onto the first major surface 102 and the edge surface 106 of the substrate 100, and a second portion 204a2 of one of the first plurality of electrodes 204a is simultaneously deposited onto the second major surface 104 and the edge surface 106 of the substrate 100. As shown in FIG. 11A , the first portion 204a1 and the second portion 204a2 are portions of the same electrode. As shown in FIG. 11B (an exploded view of the circled area "B" in FIG. 7 ), the first portion 204a1 and the second portion 204a2 are portions of different electrodes (i.e., the first opening 300a and the second opening 300b are in a staggered configuration).

第8圖及第9圖相應地展示根據本文所揭示的實施例的電極沉積設備340的側面及頂部透視圖。電極沉積設備340包括複數個台350,每一台350包括Y-軸線移動機構352、X-軸線移動機構354,以及複數個可移動地安裝的孔口(例如,噴嘴) 300,該複數個可移動地安裝的孔口(例如,噴嘴) 300用以將氣溶膠噴流發射至基板100上,以使得在上面沉積複數個電極。每一基板100可經固定地安裝至基板定位機構356上,該基板定位機構356能夠在諸對台350之間移動每一基板100。並且,儘管第9圖展示四對台350,本文所揭示的實施例可包括任何數目個台350或任何數目對台350。另外,儘管第9圖展示針對每個台350的兩個可移除地安裝的孔口300,本文所揭示的實施例包括每一台350包括任何數目個可移除地安裝的孔口300的情況。FIG8 and FIG9 respectively show side and top perspective views of an electrode deposition apparatus 340 according to embodiments disclosed herein. The electrode deposition apparatus 340 includes a plurality of stages 350, each of which includes a Y-axis motion mechanism 352, an X-axis motion mechanism 354, and a plurality of movably mounted orifices (e.g., nozzles) 300 for emitting aerosol jets onto substrates 100 to deposit a plurality of electrodes thereon. Each substrate 100 can be fixedly mounted on a substrate positioning mechanism 356, which is capable of moving each substrate 100 between pairs of stages 350. Furthermore, although FIG. 9 shows four pairs of stages 350, embodiments disclosed herein may include any number of stages 350 or any number of pairs of stages 350. Additionally, although FIG. 9 shows two removably mounted apertures 300 for each stage 350, embodiments disclosed herein include each stage 350 including any number of removably mounted apertures 300.

複數個台350實現例如第一複數個電極在上游台350沉積至基板100上(或第一及第二複數個電極藉由一對上游台350沉積至基板100上),並且隨後額外複數個電極藉由一或多個下游遊台350 (或者一或多對下游台350)沉積至同一基板100上。因此,本文所揭示的實施例包括在沉積第一複數個電極之後,沉積沿著基板100的第一主表面102的部分、邊緣表面106以及第二主表面104的部分延伸的第三複數個電極的實施例(例如,其中第三複數個電極由位於沉積第一複數個電極的台350下游的台350沉積至基板100上)。隨後複數個電極可額外地藉由一或多個進一步下游台350沉積至基板100上。此可例如實現在基板100上沉積在X方向上具有變化尺寸的電極。The plurality of stages 350 enables, for example, a first plurality of electrodes to be deposited onto a substrate 100 at an upstream stage 350 (or a first and second plurality of electrodes to be deposited onto a substrate 100 by a pair of upstream stages 350), and subsequently an additional plurality of electrodes to be deposited onto the same substrate 100 by one or more downstream stages 350 (or one or more pairs of downstream stages 350). Thus, embodiments disclosed herein include embodiments in which, after depositing the first plurality of electrodes, a third plurality of electrodes extending along a portion of the first major surface 102, the edge surface 106, and a portion of the second major surface 104 of the substrate 100 is deposited (e.g., wherein the third plurality of electrodes is deposited onto the substrate 100 by a stage 350 downstream from the stage 350 that deposited the first plurality of electrodes). Subsequently, a plurality of electrodes can additionally be deposited onto the substrate 100 via one or more further downstream stages 350. This can, for example, enable electrodes having varying dimensions in the X direction to be deposited on the substrate 100.

Y-軸線移動機構352及X-軸線移動機構354各自能夠在Y及X方向上相對於基板100相應地移動孔口300。第12圖為孔口300相對於基板的X及Y移動的頂部。如第12圖所示,孔口300在基板100的邊緣表面106的第一位置P1中開始離開,隨後藉由Y-軸線移動機構352在Y方向上移動至第二位置P2,如由實線箭頭M1所示。在此移動期間,孔口300將氣溶膠噴流發射至基板100上,以便在上面沉積電極。接著,孔口300藉由X-軸線移動機構354在X方向上移動至第三位置P3,如由虛線箭頭M2所示。在此移動期間,孔口300並不將氣溶膠噴流發射至基板100上。相反,此移動的長度提供相鄰電極之間的節距距離(節距距離為相鄰電極在X方向上的中間寬度之間的最短距離)。接著,孔口藉由Y-軸線移動機構352在Y方向上移動至第四位置P4,如由實線箭頭M3所示。在此移動期間,孔口300將氣溶膠噴流發射至基板100上,以便在上面沉積電極。接著,孔口300再次藉由Y-軸線移動機構354在Y方向上移動至第五位置P5,如由虛線箭頭M4所示。在此移動期間,孔口300並不將氣溶膠噴流發射至基板100上。最後,孔口300藉由X-軸線移動機構354在X方向上移動至第六位置P6,如由虛線箭頭M5所示。在此移動期間,孔口300並不將氣溶膠噴流發射至基板100上。此移動的長度提供相鄰電極之間的節距距離。The Y-axis movement mechanism 352 and the X-axis movement mechanism 354 are each capable of moving the orifice 300 relative to the substrate 100 in the Y and X directions, respectively. FIG12 illustrates the X and Y movement of the orifice 300 relative to the substrate. As shown in FIG12 , the orifice 300 begins in a first position P1 away from the edge surface 106 of the substrate 100 and is then moved in the Y direction to a second position P2, as indicated by the solid arrow M1, by the Y-axis movement mechanism 352. During this movement, the orifice 300 emits an aerosol jet onto the substrate 100 to deposit an electrode thereon. Next, the orifice 300 is moved in the X-direction to a third position P3, as indicated by the dashed arrow M2, by the X-axis movement mechanism 354. During this movement, the orifice 300 does not emit an aerosol jet onto the substrate 100. Instead, the length of this movement provides the pitch distance between adjacent electrodes (the pitch distance is the shortest distance between the mid-widths of adjacent electrodes in the X-direction). Next, the orifice is moved in the Y-direction to a fourth position P4, as indicated by the solid arrow M3, by the Y-axis movement mechanism 352. During this movement, the orifice 300 emits an aerosol jet onto the substrate 100 to deposit electrodes thereon. Next, the orifice 300 is again moved in the Y direction by the Y-axis movement mechanism 354 to a fifth position P5, as indicated by the dashed arrow M4. During this movement, the orifice 300 does not emit an aerosol spray onto the substrate 100. Finally, the orifice 300 is moved in the X direction by the X-axis movement mechanism 354 to a sixth position P6, as indicated by the dashed arrow M5. During this movement, the orifice 300 does not emit an aerosol spray onto the substrate 100. The length of this movement provides the pitch distance between adjacent electrodes.

在某些示例性實施例中,在其中孔口300並不將氣溶膠噴流發射至基板100上的移動期間,一或多個遮罩部件(未示出)可有效地阻止孔口300與基板100之間的流動。此可例如實現孔口300氣溶膠噴流發射的更有效的連續操作。In certain exemplary embodiments, during periods of movement in which the orifice 300 is not emitting an aerosol spray onto the substrate 100, one or more shield members (not shown) may effectively prevent flow between the orifice 300 and the substrate 100. This may, for example, enable more efficient continuous operation of the aerosol spray emission from the orifice 300.

儘管本揭示案的第12圖及其他附圖指示相鄰電極知己近似恆定的節距距離,本文所揭示的實施例包括X-軸線移動機構可在相鄰電極之間產生變化的節距距離的情況。另外,儘管第12圖展示藉由Y-軸線移動機構在Y方向上單邊移動以沉積電極(例如,如由實線箭頭M1及M3所示),本文所揭示的實施例包括藉由Y-軸線機構的雙邊移動來沉積電極的情況(亦即,Y-軸線機構在Y方向上移動噴嘴以部分地沉積電極,隨後在Y方向上反向以繼續沉積同一或另一(例如)相鄰電極)。Although FIG. 12 and other figures of this disclosure indicate an approximately constant pitch distance between adjacent electrodes, embodiments disclosed herein include cases where the X-axis motion mechanism can produce a varying pitch distance between adjacent electrodes. In addition, although FIG. 12 shows unilateral movement in the Y direction by the Y-axis movement mechanism to deposit the electrode (e.g., as indicated by solid arrows M1 and M3), the embodiments disclosed herein include cases where the electrode is deposited by bilateral movement of the Y-axis mechanism (i.e., the Y-axis mechanism moves the nozzle in the Y direction to partially deposit the electrode, and then reverses in the Y direction to continue depositing the same or another (e.g., adjacent) electrode).

在某些示例性實施例中,電極204可在X方向上自約10微米變化至約100微米,諸如,自約20微米變化至約80微米,包括約50微米。在某些示例性實施例中,相鄰電極之間的節距距離可自約20微米至約200微米,諸如,自約50微米至約150微米,包括約100微米。In certain exemplary embodiments, the electrodes 204 may range from about 10 microns to about 100 microns in the X direction, e.g., from about 20 microns to about 80 microns, including about 50 microns. In certain exemplary embodiments, the pitch distance between adjacent electrodes may range from about 20 microns to about 200 microns, e.g., from about 50 microns to about 150 microns, including about 100 microns.

在某些示例性實施例中,基板100可以具有在第一主表面102與第二主表面104之間自約0.1毫米變化至約1毫米的厚度,諸如自約0.2毫米至約0.8毫米,並且進一步諸如自約0.3毫米至約0.7毫米,包括約0.5毫米。In certain exemplary embodiments, the substrate 100 may have a thickness between the first major surface 102 and the second major surface 104 ranging from about 0.1 mm to about 1 mm, such as from about 0.2 mm to about 0.8 mm, and further such as from about 0.3 mm to about 0.7 mm, including about 0.5 mm.

藉由移動機構(例如,Y-軸線移動機構352及/或X-軸線移動機構354)的重複增量移動,諸如第12圖中所說明並且以諸如上文所闡述的尺寸,可例如藉由音圈型電動機所致動的平行運動撓曲機構來實現。此類機構可用以在相對小的距離內提供重複的準確孔口定位,以使得實現數百萬、數億,甚至數十億的重複。此類機構亦可提供相對於其他構型的最小累積零件移動,同時仍在包含如本文所描述的基板100及電極204的各種期望顯示器瓦片構型上提供快速電極沉積。Repeated incremental movement of a motion mechanism (e.g., Y-axis motion mechanism 352 and/or X-axis motion mechanism 354), as illustrated in FIG. 12 and with the dimensions described above, can be achieved, for example, by a parallel motion flexure mechanism actuated by a voice coil motor. Such a mechanism can be used to provide repeated accurate orifice positioning over relatively small distances, enabling millions, hundreds of millions, or even billions of repetitions. Such a mechanism can also provide minimal cumulative part movement relative to other configurations while still providing rapid electrode deposition on a variety of desired display tile configurations including substrate 100 and electrode 204 as described herein.

基板100與電極沉積設備340之間的相對移動可藉由各種示例性構型來促進,如本文進一步所描述。Relative movement between the substrate 100 and the electrode deposition apparatus 340 can be facilitated by various exemplary configurations, as further described herein.

例如,第13圖展示根據本文所揭示的實施例的基板100上的電極沉積構型的側面透視圖。如第13圖所示,基板100的第一端110受固定件400約束,而基板100的第二端112可藉由致動器500撓曲(如虛線區所示)。致動器500可相對於基板100移動,並且基板100的第二端112的撓曲可實現其相對於沉積孔口300的移動,以便在基板100的第二端112附近部分地列印電極(未示出)。此類構型,以及第14圖至第16圖所示的其他構型,可實現高精度定位,而無需精確的軸承系統來引導沉積孔口300的列印衝程。For example, FIG. 13 shows a side perspective view of an electrode deposition configuration on a substrate 100 according to embodiments disclosed herein. As shown in FIG. 13 , the first end 110 of the substrate 100 is constrained by a fixture 400 , while the second end 112 of the substrate 100 can be flexed by an actuator 500 (as shown in the dashed area). The actuator 500 can be moved relative to the substrate 100 , and the flexure of the second end 112 of the substrate 100 can achieve movement relative to the deposition orifice 300 , thereby partially printing an electrode (not shown) near the second end 112 of the substrate 100 . This configuration, as well as other configurations shown in FIG. 14 through FIG. 16 , can achieve high-precision positioning without requiring a precise bearing system to guide the print stroke of the deposition orifice 300 .

第14圖展示根據本文所揭示的實施例的基板100上的另一電極沉積構型的側面透視圖。如第14圖所示,基板100的第一主表面102與空氣軸承600流體連通,該空氣軸承600可經真空預載以旋轉地約束並加固基板100。致動器500可進而沿著空氣軸承600在兩個維度上移位基板100,以便提供相對於沉積孔口300的移動,從而部分地列印複數個電極(未示出)。致動器500可以例如包含真空葉片或邊緣抓持器。FIG14 shows a side perspective view of another electrode deposition configuration on a substrate 100 according to embodiments disclosed herein. As shown in FIG14 , the first major surface 102 of the substrate 100 is in fluid communication with an air bearing 600, which can be vacuum preloaded to rotationally constrain and stabilize the substrate 100. An actuator 500 can further displace the substrate 100 along the air bearing 600 in two dimensions to provide movement relative to the deposition orifice 300, thereby partially printing a plurality of electrodes (not shown). The actuator 500 can, for example, comprise a vacuum blade or an edge gripper.

第15A圖及第15B圖展示根據本文所揭示的實施例的基板100上的另一電極沉積構型的側面透視圖。類似於第14圖所示的構型,採用了空氣軸承600,該空氣軸承600可經真空預載,並且在此種狀況下旋轉地約束托架700 (諸如,真空夾盤),該托架700旋轉地約束並加固基板100,其中基板的第一主表面102與托架700流體連通。托架700可包括參照特徵(未示出)以固定並定位基板100,並且致動器500可沿著空氣軸承600在兩個維度上移位托架700,以便提供相對於沉積孔口300的移動,從而部分地列印複數個電極(未示出)。另外,如第15B圖所示,托架700及基板100可相對於空氣軸承600及沉積孔口300再定向以列印複數個電極的相對側面(未示出)。FIG15A and FIG15B show side perspective views of another electrode deposition configuration on a substrate 100 according to embodiments disclosed herein. Similar to the configuration shown in FIG14 , an air bearing 600 is employed. The air bearing 600 can be vacuum preloaded and, in this state, rotationally constrains a support 700 (e.g., a vacuum chuck). The support 700 rotationally constrains and secures the substrate 100, with the first major surface 102 of the substrate in fluid communication with the support 700. The carriage 700 may include reference features (not shown) to secure and position the substrate 100, and the actuator 500 may displace the carriage 700 in two dimensions along the air bearing 600 to provide movement relative to the deposition orifice 300 to partially print a plurality of electrodes (not shown). Additionally, as shown in FIG. 15B , the carriage 700 and substrate 100 may be reoriented relative to the air bearing 600 and deposition orifice 300 to print opposite sides of the plurality of electrodes (not shown).

第16圖展示根據本文所揭示的實施例的基板100上的電極沉積構型的側面透視圖。如第16圖所示,基板100經由致動器500圍繞旋轉軸線(A)旋轉,從而實現基板100與沉積孔口300之間的相對移動,以使得完整電極(未示出)可以在單次移動中沉積至基板100上。FIG16 shows a side perspective view of an electrode deposition configuration on a substrate 100 according to an embodiment disclosed herein. As shown in FIG16 , the substrate 100 is rotated about a rotation axis (A) by an actuator 500, thereby enabling relative movement between the substrate 100 and the deposition orifice 300, so that a complete electrode (not shown) can be deposited onto the substrate 100 in a single movement.

第17圖展示根據本文所揭示的實施例的基板100上的電極沉積構型的側面透視圖。如第17圖所示,基板100相對於沉積孔口300傾斜地定位,此舉同時將電極(未示出)沉積至基板100的相對端部上,其中沉積孔口300經定向在相對的豎直方向上。FIG17 shows a side perspective view of an electrode deposition configuration on a substrate 100 according to an embodiment disclosed herein. As shown in FIG17 , the substrate 100 is positioned at an angle relative to the deposition aperture 300, thereby simultaneously depositing electrodes (not shown) on opposite ends of the substrate 100, wherein the deposition aperture 300 is oriented in opposite vertical directions.

由於本文中的實施例(包括第13圖至第16圖所示的實施例)可以包括基板100的主表面與自沉積孔口300發射的氣溶膠噴流的主軸線之間的傾斜斜角關係,包括沉積孔口300與基板100之間的變化斜角關係,此可以自然地導致沉積孔口300與基板100之間的變化距離。由於自沉積孔口300發射的氣溶膠噴流在本質上趨於成為錐形,沉積孔口300與基板100之間的變化距離可導致變化的電極寬度。此類斜角關係亦可導致沿著基板100每單位長度上電極材料的變化沉積,從而導致不一致的電極厚度。這些問題可藉由控制沉積孔口300與基板100之間的相對移動來解決(亦即,補償),例如藉由控制或改變基板100相對於沉積孔口300移動的距離及/或速度,以便沉積寬度及厚度相對恆定或均一的電極(例如,藉由控制致動器500的移動)。此類可例如根據普通熟習此項技術者已知的三維(three dimensional, 3D)列印技術來完成,該些三維(3D)列印技術可應用至本文所揭示的實施例中的任何者。Because the embodiments herein (including the embodiments shown in Figures 13-16) can include an oblique bevel relationship between the major surface of the substrate 100 and the major axis of the aerosol jet emitted from the deposition orifice 300, including a varying bevel relationship between the deposition orifice 300 and the substrate 100, this can naturally result in a varying distance between the deposition orifice 300 and the substrate 100. Because the aerosol jet emitted from the deposition orifice 300 tends to be tapered in nature, the varying distance between the deposition orifice 300 and the substrate 100 can result in a varying electrode width. Such an oblique angle relationship can also result in variable deposition of electrode material per unit length along the substrate 100, resulting in inconsistent electrode thickness. These issues can be addressed (i.e., compensated for) by controlling the relative motion between the deposition orifice 300 and the substrate 100, for example by controlling or varying the distance and/or speed at which the substrate 100 moves relative to the deposition orifice 300, so as to deposit an electrode of relatively constant or uniform width and thickness (e.g., by controlling the motion of the actuator 500). This can be accomplished, for example, according to three-dimensional (3D) printing techniques known to those skilled in the art, which can be applied to any of the embodiments disclosed herein.

本文所揭示的實施例亦包括包含本文所揭示的顯示器瓦片中的任何者的電子裝置。Embodiments disclosed herein also include electronic devices comprising any of the display tiles disclosed herein.

儘管已參照熔合下拉製程來描述上述實施例,應瞭解,此類實施例亦能夠應用至其他玻璃形成製程,諸如,浮式製程、拉縫製程、上拉製程、拉管製程,以及壓輥製程。Although the above embodiments have been described with reference to a fusion down-draw process, it should be understood that such embodiments are also applicable to other glass forming processes, such as float processes, slit processes, up-draw processes, tube drawing processes, and roll processes.

熟習此項技術者將明白,在本揭示案的實施例不脫離本揭示案的精神及範疇的情況下,可對本揭示案的實施例做出修改及變化。因此,預期本揭示案涵蓋屬於隨附請求項及其等效物的範疇的此類修改及變化。Those skilled in the art will appreciate that modifications and variations can be made in the embodiments of the present disclosure without departing from the spirit and scope of the present disclosure. Therefore, it is intended that the present disclosure covers such modifications and variations as come within the scope of the appended claims and their equivalents.

10:玻璃製造設備 12:玻璃熔融爐 14:熔融槽 16:上游玻璃製造設備 18:儲存箱 20:原始材料遞送裝置 22:電動機 24:原始材料 26:箭頭 28:熔融玻璃 30:下游玻璃製造設備 32:第一連接導管 34:精煉槽 36:混合槽 38:第二連接導管 40:遞送槽 42:形成主體 44:出口導管 46:第三連接導管 48:形成設備 50:入口導管 52:溝槽 54:會聚形成表面 56:底部邊緣 58:該單個玻璃帶 60:拉製或流動方向 62:個別玻璃片 64:機器人 65:抓握工具 72:邊緣輥 82:牽引輥 90:玻璃分離設備 100:基板 102:第一主表面 104:相對第二主表面 106:邊緣表面 110:第一端 112:第二端 202:接觸襯墊 204:電極 204a:電極 204a1:電極的第一部分 204a2:電極的第二部分 204b:電極 204c:第三複數個電極 204d:第四複數個電極 206:遮罩 300:沉積孔口 300a:第一孔口 300b:第二孔口 300c:第三孔口 300d:第四孔口 300e:第五孔口 300f:第六孔口 300g:第七孔口 302a:第一支架 302b:第二支架 302c:第三支架 302d:第四支架 302e:第五支架 302f:第六支架 302g:第七支架 340:電極沉積設備 350:台 352:Y-軸線移動機構 354:X-軸線移動機構 356:基板定位機構 400:固定件 500:致動器 600:空氣軸承 700:托架 X:軸線 Y:軸線 A:圓形區 B:圓形區 P1:第一位置 P2:第二位置 P3:第三位置 P4:第四位置 P5:第五位置 P6:第六位置 M1:箭頭 M2:箭頭 M3:箭頭 M4:箭頭 M5:箭頭 10: Glassmaking equipment 12: Glass melting furnace 14: Melting tank 16: Upstream glassmaking equipment 18: Storage tank 20: Raw material delivery device 22: Motor 24: Raw material 26: Arrow 28: Molten glass 30: Downstream glassmaking equipment 32: First connecting conduit 34: Refining tank 36: Mixing tank 38: Second connecting conduit 40: Delivery trough 42: Forming body 44: Outlet conduit 46: Third connecting conduit 48: Forming equipment 50: Inlet conduit 52: Groove 54: Converging forming surface 56: Bottom edge 58: The single glass ribbon 60: Draw or flow direction 62: Individual glass sheets 64: Robot 65: Gripping tool 72: Edge roller 82: Pull roller 90: Glass separation apparatus 100: Substrate 102: First major surface 104: Opposing second major surface 106: Edge surface 110: First end 112: Second end 202: Contact pad 204: Electrode 204a: Electrode 204a1: First portion of electrode 204a2: Second portion of electrode 204b: Electrode 204c: Third plurality of electrodes 204d: Fourth plurality of electrodes 206: Mask 300: Deposition orifice 300a: First opening 300b: Second opening 300c: Third opening 300d: Fourth opening 300e: Fifth opening 300f: Sixth opening 300g: Seventh opening 302a: First bracket 302b: Second bracket 302c: Third bracket 302d: Fourth bracket 302e: Fifth bracket 302f: Sixth bracket 302g: Seventh bracket 340: Electrode deposition equipment 350: Stage 352: Y-axis motion mechanism 354: X-axis motion mechanism 356: Substrate positioning mechanism 400: Fixing element 500: Actuator 600: Air bearing 700: Bracket X-axis Y: Axis A: Circular area B: Circular area P1: First position P2: Second position P3: Third position P4: Fourth position P5: Fifth position P6: Sixth position M1: Arrow M2: Arrow M3: Arrow M4: Arrow M5: Arrow

第1圖為實例熔合下拉玻璃製作設備及製程的示意圖;Figure 1 is a schematic diagram of an example fusion down-draw glass manufacturing apparatus and process;

第2圖為基板的透視圖;FIG2 is a perspective view of the substrate;

第3圖為以相對於沉積孔口的斜角定向來定位的電極沉積的透視圖;FIG3 is a perspective view of an electrode deposition positioned at an oblique angle relative to the deposition orifice;

第4圖為上面沉積有包覆圍繞電極的基板的部分的側面剖面圖;FIG4 is a side cross-sectional view of a portion of a substrate on which a coating surrounding an electrode is deposited;

第5圖為根據本文所揭示的實施例的基板上的電極沉積的側面透視圖;FIG5 is a side perspective view of electrode deposition on a substrate according to embodiments disclosed herein;

第6圖為根據本文所揭示的實施例的基板上的電極沉積的頂部透視圖;FIG6 is a top perspective view of electrode deposition on a substrate according to embodiments disclosed herein;

第7圖為根據本文所揭示的實施例的基板上的電極沉積的端部透視圖;FIG7 is an end perspective view of electrode deposition on a substrate according to embodiments disclosed herein;

第8圖為根據本文所揭示的實施例的電極沉積設備的側面透視圖;FIG8 is a side perspective view of an electrode deposition apparatus according to an embodiment disclosed herein;

第9圖為根據本文所揭示的實施例的電極沉積設備的頂部透視圖;FIG. 9 is a top perspective view of an electrode deposition apparatus according to embodiments disclosed herein;

第10圖為根據本文所揭示的實施例的基板上的電極沉積的側面透視圖;FIG. 10 is a side perspective view of electrode deposition on a substrate according to embodiments disclosed herein;

第11A圖及第11B圖為根據本文所揭示的實施例的基板上的電極沉積的端部透視圖;11A and 11B are end perspective views of electrode deposition on a substrate according to embodiments disclosed herein;

第12圖為相對於基板的X及Y孔口移動的頂部視圖;FIG12 is a top view of the X and Y orifice movement relative to the substrate;

第13圖為根據本文所揭示的實施例的基板上的電極沉積構型的側面透視圖;FIG13 is a side perspective view of an electrode deposition configuration on a substrate according to embodiments disclosed herein;

第14圖為根據本文所揭示的實施例的基板上的電極沉積構型的側面透視圖;FIG14 is a side perspective view of an electrode deposition configuration on a substrate according to embodiments disclosed herein;

第15A圖及第15B圖為根據本文所揭示的實施例的基板上的電極沉積構型的側面透視圖;15A and 15B are side perspective views of electrode deposition configurations on a substrate according to embodiments disclosed herein;

第16圖為根據本文所揭示的實施例的基板上的電極沉積構型的側面透視圖;以及FIG. 16 is a side perspective view of an electrode deposition configuration on a substrate according to embodiments disclosed herein; and

第17圖為根據本文所揭示的實施例的基板上的電極沉積構型的側面透視圖。FIG. 17 is a side perspective view of an electrode deposition configuration on a substrate according to embodiments disclosed herein.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic Storage Information (Please enter in order by institution, date, and number) None International Storage Information (Please enter in order by country, institution, date, and number) None

100:基板 100:Substrate

204a:電極 204a: Electrode

204b:電極 204b: Electrode

300a:第一孔口 300a: First orifice

300b:第二孔口 300b: Second orifice

300c:第三孔口 300c: Third orifice

300d:第四孔口 300d: Fourth orifice

302a:第一支架 302a: First bracket

302b:第二支架 302b: Second bracket

302c:第三支架 302c: Third bracket

302d:第四支架 302d: Fourth bracket

206:遮罩 206: Mask

A:圓形區 A: Circular area

Claims (28)

一種製造一顯示器瓦片的方法,包含以下步驟: 沉積第一複數個電極,該些第一複數個電極沿著一基板的一第一主表面的一部分、一邊緣表面以及一相對第二主表面的一部分延伸,沉積該些第一複數個電極的每一電極之步驟包含以下步驟: 將該電極的一第一部分沉積至該基板的該第一主表面及該邊緣表面上;及 將該電極的一第二部分沉積至該基板的該相對第二主表面及該邊緣表面上; 其中: 該沉積之步驟包含同時地進行以下步驟:將該些第一複數個電極中之一者的該第一部分沉積至該基板的該第一主表面及該邊緣表面上;以及將該些第一複數個電極中之一者的一第二部分沉積至該基板的該第二主表面及該邊緣表面上,其中該第一部分與該第二部分係不同電極的部分; 該第一主表面在大致平行於該第二主表面的一方向上延伸,並且該邊緣表面在該第一主表面與該第二主表面之間延伸;並且 該電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸。 A method for manufacturing a display tile comprises the following steps: Depositing a first plurality of electrodes, the first plurality of electrodes extending along a portion of a first major surface, an edge surface, and a portion of an opposing second major surface of a substrate, the step of depositing each of the first plurality of electrodes comprising the following steps: Depositing a first portion of the electrode onto the first major surface and the edge surface of the substrate; and Depositing a second portion of the electrode onto the opposing second major surface and the edge surface of the substrate; Wherein: The depositing step includes simultaneously depositing a first portion of one of the first plurality of electrodes onto the first major surface and the edge surface of the substrate; and depositing a second portion of one of the first plurality of electrodes onto the second major surface and the edge surface of the substrate, wherein the first portion and the second portion are portions of different electrodes; The first major surface extends in a direction substantially parallel to the second major surface, and the edge surface extends between the first major surface and the second major surface; and The electrode extends along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate. 如請求項1所述之方法,其中該電極的該第一部分由自一第一孔口發射並且導向該基板的該第一主表面及該邊緣表面的一第一氣溶膠噴流來沉積,並且該電極的該第二部分由自一第二孔口發射並且導向該基板的該第二主表面及該邊緣表面的一第二氣溶膠噴流來沉積。The method of claim 1, wherein the first portion of the electrode is deposited by a first aerosol jet emitted from a first orifice and directed toward the first major surface and the edge surface of the substrate, and the second portion of the electrode is deposited by a second aerosol jet emitted from a second orifice and directed toward the second major surface and the edge surface of the substrate. 如請求項1所述之方法,其中該方法包含以下步驟:在沉積該些第一複數個電極的同時,沉積第二複數個電極,該些第二複數個電極沿著該基板的該第一主表面的一部分、一相對邊緣表面以及該第二主表面的一部分延伸。The method of claim 1, wherein the method comprises the steps of depositing a second plurality of electrodes simultaneously with depositing the first plurality of electrodes, the second plurality of electrodes extending along a portion of the first major surface, an opposite edge surface, and a portion of the second major surface of the substrate. 如請求項1所述之方法,其中該方法包含以下步驟:在沉積該些第一複數個電極的同時,沉積第三複數個電極,該些第三複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸。The method of claim 1, wherein the method comprises the steps of depositing a third plurality of electrodes simultaneously with depositing the first plurality of electrodes, the third plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate. 如請求項1所述之方法,其中該方法包含以下步驟:在沉積該些第一複數個電極之後,沉積第三複數個電極,該些第三複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸。The method of claim 1, wherein the method comprises the steps of depositing a third plurality of electrodes after depositing the first plurality of electrodes, the third plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate. 如請求項3所述之方法,其中該方法包含以下步驟:在沉積該些第一複數個電極的同時,沉積第三複數個電極,該些第三複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸,並且在沉積該些第二複數個電極的同時,沉積第四複數個電極,該些第四複數個電極沿著該基板的該第一主表面的一部分、該相對邊緣表面以及該第二主表面的一部分延伸。A method as described in claim 3, wherein the method includes the following steps: depositing a third plurality of electrodes simultaneously with depositing the first plurality of electrodes, wherein the third plurality of electrodes extend along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate, and depositing a fourth plurality of electrodes simultaneously with depositing the second plurality of electrodes, wherein the fourth plurality of electrodes extend along a portion of the first major surface, the opposite edge surface, and a portion of the second major surface of the substrate. 如請求項1所述之方法,其中該方法包含以下步驟:相對於一孔口移動該基板,該孔口將一氣溶膠噴流沉積至該基板上。The method of claim 1, wherein the method comprises the steps of moving the substrate relative to an orifice that deposits an aerosol jet onto the substrate. 如請求項7所述之方法,其中該基板的移動受一致動器影響。The method of claim 7, wherein the movement of the substrate is affected by an actuator. 如請求項8所述之方法,其中該基板與一空氣軸承流體連通。The method of claim 8, wherein the substrate is in fluid communication with an air bearing. 如請求項1所述之方法,其中在該沉積之期間,該基板經定位在一支架上,該支架與一空氣軸承流體連通。The method of claim 1, wherein during the deposition, the substrate is positioned on a support that is in fluid communication with an air bearing. 如請求項1所述之方法,其中在該沉積之期間,該基板的該第一主表面相對於該氣溶膠噴流的一主軸線傾斜地斜角。The method of claim 1, wherein during the depositing, the first major surface of the substrate is beveled relative to a major axis of the aerosol jet. 如請求項7所述之方法,其中該基板相對於該孔口的移動速度及該基板與該孔口之間的一距離經控制以沉積寬度及厚度近似均一的該電極。The method of claim 7, wherein the speed of movement of the substrate relative to the orifice and a distance between the substrate and the orifice are controlled to deposit the electrode with approximately uniform width and thickness. 如請求項1所述之方法,其中該基板包含玻璃。The method of claim 1, wherein the substrate comprises glass. 一種製造一顯示器瓦片的方法,包含以下步驟: 沉積第一複數個電極,該些第一複數個電極沿著一基板的一第一主表面的一部分、一邊緣表面以及一相對第二主表面的一部分延伸,沉積該些第一複數個電極的每一電極之步驟包含以下步驟: 將該電極的一第一部分沉積至該基板的該第一主表面及該邊緣表面上; 將該電極的一第二部分沉積至該基板的該相對第二主表面及該邊緣表面上;及 沉積第二複數個電極,該些第二複數個電極沿著該基板的該第一主表面的一部分、一相對邊緣表面以及該第二主表面的一部分延伸 其中: 沉積該些第一複數個電極之步驟與沉積該些第二複數個電極之步驟同時發生; 該第一主表面在大致平行於該第二主表面的一方向上延伸,並且該邊緣表面在該第一主表面與該第二主表面之間延伸;並且 該電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸。 A method for manufacturing a display tile comprises the following steps: Depositing a first plurality of electrodes, the first plurality of electrodes extending along a portion of a first major surface, an edge surface, and a portion of an opposing second major surface of a substrate, the step of depositing each of the first plurality of electrodes comprising the following steps: Depositing a first portion of the electrode onto the first major surface and the edge surface of the substrate; Depositing a second portion of the electrode onto the opposing second major surface and the edge surface of the substrate; and Depositing a second plurality of electrodes, the second plurality of electrodes extending along a portion of the first major surface, an opposing edge surface, and a portion of the second major surface of the substrate Wherein: Depositing the first plurality of electrodes occurs simultaneously with depositing the second plurality of electrodes. The first major surface extends in a direction substantially parallel to the second major surface, and the edge surface extends between the first major surface and the second major surface. The electrodes extend along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate. 如請求項14所述之方法,其中該電極的該第一部分由自一第一孔口發射並且導向該基板的該第一主表面及該邊緣表面的一第一氣溶膠噴流來沉積,並且該電極的該第二部分由自一第二孔口發射並且導向該基板的該第二主表面及該邊緣表面的一第二氣溶膠噴流來沉積。The method of claim 14, wherein the first portion of the electrode is deposited by a first aerosol jet emitted from a first orifice and directed toward the first major surface and the edge surface of the substrate, and the second portion of the electrode is deposited by a second aerosol jet emitted from a second orifice and directed toward the second major surface and the edge surface of the substrate. 如請求項14所述之方法,其中在該沉積之期間,該基板經定位在一支架上,該支架與一空氣軸承流體連通。The method of claim 14, wherein during the deposition, the substrate is positioned on a support that is in fluid communication with an air bearing. 如請求項14所述之方法,其中該基板包含玻璃。The method of claim 14, wherein the substrate comprises glass. 一種用於製造一顯示器瓦片的設備,包含: 一第一孔口,用以將一第一氣溶膠噴流導向一基板的一第一主表面及一邊緣表面;以及 一第二孔口,用以將一第二氣溶膠噴流導向該基板的一相對第二主表面及一邊緣表面; 其中: 該第一主表面在大致平行於該第二主表面的一方向上延伸,並且該邊緣表面在該第一主表面與該第二主表面之間延伸; 該第一氣溶膠噴流用以將一電極的一第一部分沉積至一基板的該第一主表面及該邊緣表面上; 該第二氣溶膠噴流用以將該電極的一第二部分沉積至該基板的該第二主表面及該邊緣表面上; 該設備被配置為:沉積第一複數個電極,該些第一複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸;以及 該設備被配置為:在沉積該些第一複數個電極的同時,沉積第二複數個電極,該些第二複數個電極沿著該基板的該第一主表面的一部分、一相對邊緣表面以及該第二主表面的一部分延伸。 An apparatus for manufacturing a display tile comprises: a first orifice for directing a first aerosol jet toward a first major surface and an edge surface of a substrate; and a second orifice for directing a second aerosol jet toward an opposing second major surface and an edge surface of the substrate; wherein: the first major surface extends in a direction generally parallel to the second major surface, and the edge surface extends between the first major surface and the second major surface; the first aerosol jet is used to deposit a first portion of an electrode onto the first major surface and the edge surface of a substrate; the second aerosol jet is used to deposit a second portion of the electrode onto the second major surface and the edge surface of the substrate; The apparatus is configured to deposit a first plurality of electrodes, the first plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate; and simultaneously with depositing the first plurality of electrodes, the apparatus is configured to deposit a second plurality of electrodes, the second plurality of electrodes extending along a portion of the first major surface, an opposing edge surface, and a portion of the second major surface of the substrate. 如請求項18所述之設備,其中該設備用以在沉積該些第一複數個電極的同時,沉積第三複數個電極,該些第三複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸。The apparatus of claim 18, wherein the apparatus is configured to deposit a third plurality of electrodes simultaneously with depositing the first plurality of electrodes, the third plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate. 如請求項18所述之設備,其中該設備用以在沉積該些第一複數個電極之後,沉積第三複數個電極,該些第三複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸。The apparatus of claim 18, wherein the apparatus is configured to deposit a third plurality of electrodes after depositing the first plurality of electrodes, the third plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate. 如請求項18所述之設備,其中該設備用以在沉積該些第一複數個電極的同時,沉積第三複數個電極,該些第三複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸,並且在沉積該些第二複數個電極的同時,沉積第四複數個電極,該些第四複數個電極沿著該基板的該第一主表面的一部分、該相對邊緣表面以及該第二主表面的一部分延伸。The apparatus of claim 18, wherein the apparatus is configured to deposit a third plurality of electrodes simultaneously with depositing the first plurality of electrodes, the third plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate, and to deposit a fourth plurality of electrodes simultaneously with depositing the second plurality of electrodes, the fourth plurality of electrodes extending along a portion of the first major surface, the opposite edge surface, and a portion of the second major surface of the substrate. 如請求項18所述之設備,其中該設備包含一致動器,該致動器用以影響該基板相對於該第一孔口的移動。The apparatus of claim 18, wherein the apparatus comprises an actuator for affecting movement of the substrate relative to the first orifice. 如請求項22所述之設備,其中該設備包含一空氣軸承,該空氣軸承用以與該基板流體連通。The apparatus of claim 22, wherein the apparatus comprises an air bearing in fluid communication with the substrate. 如請求項22所述之設備,其中該設備包含一支架,該支架用以將該基板定位在其上,並且用以與一空氣軸承流體連通。The apparatus of claim 22, wherein the apparatus comprises a support for positioning the substrate thereon and for fluidly communicating with an air bearing. 如請求項22所述之設備,其中該設備用以定位該基板,以使得該基板的該第一主表面相對於該第一氣溶膠噴流的一主軸線傾斜地斜角。The apparatus of claim 22, wherein the apparatus is configured to position the substrate such that the first major surface of the substrate is angled obliquely relative to a major axis of the first aerosol jet. 一種藉由如請求項1所述之方法製作的顯示器瓦片。A display tile manufactured by the method of claim 1. 一種包含如請求項26所述之顯示器瓦片的電子裝置。An electronic device comprising the display tile of claim 26. 一種用於製造一顯示器瓦片的設備,包含: 一第一孔口,用以將一第一氣溶膠噴流導向一基板的一第一主表面及一邊緣表面;以及 一第二孔口,用以將一第二氣溶膠噴流導向該基板的一相對第二主表面及一邊緣表面; 其中: 該第一主表面在大致平行於該第二主表面的一方向上延伸,並且該邊緣表面在該第一主表面與該第二主表面之間延伸; 該第一氣溶膠噴流用以將一電極的一第一部分沉積至一基板的該第一主表面及該邊緣表面上; 該第二氣溶膠噴流用以將該電極的一第二部分沉積至該基板的該第二主表面及該邊緣表面上; 該設備被配置為:沉積第一複數個電極,該些第一複數個電極沿著該基板的該第一主表面的一部分、該邊緣表面以及該第二主表面的一部分延伸;以及 該設備被配置為:同時沉積該些第一複數個電極的不同電極的該第一部分與該第二部分,其中該第一部分與該第二部分係不同電極的部分。 An apparatus for manufacturing a display tile comprises: a first orifice for directing a first aerosol jet toward a first major surface and an edge surface of a substrate; and a second orifice for directing a second aerosol jet toward an opposing second major surface and an edge surface of the substrate; wherein: the first major surface extends in a direction generally parallel to the second major surface, and the edge surface extends between the first major surface and the second major surface; the first aerosol jet is used to deposit a first portion of an electrode onto the first major surface and the edge surface of a substrate; the second aerosol jet is used to deposit a second portion of the electrode onto the second major surface and the edge surface of the substrate; The apparatus is configured to deposit a first plurality of electrodes, the first plurality of electrodes extending along a portion of the first major surface, the edge surface, and a portion of the second major surface of the substrate; and the apparatus is configured to simultaneously deposit the first portion and the second portion of different electrodes of the first plurality of electrodes, wherein the first portion and the second portion are portions of different electrodes.
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