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TWI890835B - Photosensitive conductive paste, cured product, method for producing insulating ceramic layer with circuit pattern, method for producing electronic component, method for producing substrate with circuit pattern, and method for producing inductor - Google Patents

Photosensitive conductive paste, cured product, method for producing insulating ceramic layer with circuit pattern, method for producing electronic component, method for producing substrate with circuit pattern, and method for producing inductor

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Publication number
TWI890835B
TWI890835B TW110128861A TW110128861A TWI890835B TW I890835 B TWI890835 B TW I890835B TW 110128861 A TW110128861 A TW 110128861A TW 110128861 A TW110128861 A TW 110128861A TW I890835 B TWI890835 B TW I890835B
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Taiwan
Prior art keywords
circuit pattern
photosensitive
insulating ceramic
conductive paste
film
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TW110128861A
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Chinese (zh)
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TW202212971A (en
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小山麻里惠
高瀨皓平
橋本大樹
北澤賢三
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日商東麗股份有限公司
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041Printed circuit coils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283After-treatment of the printed patterns, e.g. sintering or curing methods
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/001Conductive additives
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    • C08K2201/005Additives being defined by their particle size in general

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Abstract

本發明之目的係提供一種可形成高精細的電路圖案且電路圖案之燒結時的收縮量小的感光性導電糊。 The object of the present invention is to provide a photosensitive conductive paste that can form a high-precision circuit pattern and has a small amount of shrinkage during sintering of the circuit pattern.

本發明係一種感光性導電糊,其含有導電性粉末(A)及感光性有機成分(B),前述導電性粉末(A)之粒徑分布的中位直徑r為3.0μm以上6.0μm以下,全固體成分中的前述導電性粉末(A)之含量V1為37體積%以上55體積%以下。 The present invention provides a photosensitive conductive paste comprising a conductive powder (A) and a photosensitive organic component (B). The conductive powder (A) has a particle size distribution with a median diameter (r) of 3.0 μm to 6.0 μm, and a content ( V1) of the conductive powder (A) in the total solids composition of the paste is 37% by volume to 55% by volume.

Description

感光性導電糊、硬化物、附電路圖案之絕緣性陶瓷層的製造方法、電子零件的製造方法、附電路圖案之基板的製造方法、及電感器的製造方法 Photosensitive conductive paste, cured product, method for manufacturing insulating ceramic layer with circuit pattern, method for manufacturing electronic component, method for manufacturing substrate with circuit pattern, and method for manufacturing inductor

本發明係關於感光性導電糊、硬化物、燒結體、電子零件、附電路圖案之絕緣性陶瓷層的製造方法、及電子零件的製造方法。 The present invention relates to a method for manufacturing a photosensitive conductive paste, a cured product, a sintered body, an electronic component, an insulating ceramic layer with a circuit pattern, and a method for manufacturing an electronic component.

近年來,隨著電子零件之高速化‧高頻率化‧小型化進展,對於用來安裝此等之基板亦要求形成微細且低電阻的電路圖案。例如,提案有一種感光性導電糊,其可在生胚(green sheet)上形成高精細的電路圖案,可抑制燒結缺陷(例如參照專利文獻1)。 In recent years, with the advancement of electronic components toward higher speed, higher frequency, and smaller size, there is a growing demand for substrates used to mount these components to form fine, low-resistance circuit patterns. For example, a photosensitive conductive paste has been proposed that can form high-precision circuit patterns on green sheets while suppressing sintering defects (e.g., see Patent Document 1).

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2019/202889號 [Patent Document 1] International Publication No. 2019/202889

作為電子零件的製作方法之一例,可列舉下述方法:在絕緣性陶瓷層上使用感光性導電糊而形成電路圖案,將所得之附電路圖案之絕緣性陶瓷層積層而 燒結。然而,當使用專利文獻1所記載之感光性導電糊之情形中,燒結時,積層多個電路圖案之部位係收縮量大且與絕緣性陶瓷層之收縮量的差大,因此有在電子零件之端部易發生彎曲、易發生缺陷或層間之剝離之課題。 As an example of a method for manufacturing electronic components, the following method can be cited: a circuit pattern is formed on an insulating ceramic layer using a photosensitive conductive paste, and the resulting insulating ceramic layer with the circuit pattern is stacked and sintered. However, when using the photosensitive conductive paste described in Patent Document 1, the area where the multiple circuit patterns are stacked shrinks significantly during sintering, and the difference in shrinkage between the stacked layers and the insulating ceramic layer is significant. This can lead to problems such as warping at the ends of the electronic component, defects, and interlayer separation.

因此,本發明之目的係提供一種可形成高精細的電路圖案且電路圖案之燒結時的收縮量小的感光性導電糊。 Therefore, the object of the present invention is to provide a photosensitive conductive paste that can form a high-precision circuit pattern and has a small amount of shrinkage during sintering of the circuit pattern.

亦即,本發明係一種感光性導電糊,其含有導電性粒子(A)及感光性有機成分(B),前述導電性粒子(A)之粒徑分布的中位直徑r為3.0μm以上6.0μm以下,全固體成分中的前述導電性粒子(A)之含量V1為37體積%以上55體積%以下。 That is, the present invention is a photosensitive conductive paste comprising conductive particles (A) and a photosensitive organic component (B), wherein the median diameter r of the particle size distribution of the conductive particles (A) is from 3.0 μm to 6.0 μm, and the content V1 of the conductive particles (A) in the total solids is from 37 volume % to 55 volume %.

又,本發明係一種硬化物,其係將本發明之感光性導電糊硬化而成。 Furthermore, the present invention is a cured product, which is formed by curing the photosensitive conductive paste of the present invention.

又,本發明係一種燒結體,其係將本發明之感光性導電糊燒結而成。 Furthermore, the present invention is a sintered body, which is formed by sintering the photosensitive conductive paste of the present invention.

又,本發明係一種電子零件,其包含本發明之燒結體及絕緣性陶瓷層。 Furthermore, the present invention is an electronic component comprising the sintered body of the present invention and an insulating ceramic layer.

又,本發明係一種附電路圖案之絕緣性陶瓷層的製造方法,其具有:將本發明之感光性導電糊塗布於絕緣性陶瓷層上而得到塗布膜之步驟、將前述塗布膜乾燥而得到乾燥膜之步驟、與將前述乾燥膜曝光及顯影而得到電路圖案之步驟。 The present invention also provides a method for manufacturing an insulating ceramic layer with a circuit pattern, comprising: applying the photosensitive conductive paste of the present invention onto the insulating ceramic layer to obtain a coating film; drying the coating film to obtain a dried film; and exposing and developing the dried film to obtain a circuit pattern.

又,本發明係一種電子零件的製造方法,其具備:在藉由本發明之附電路圖案之絕緣性陶瓷層的製造方法所得之附電路圖案之絕緣性陶瓷層上依序重複多次以下的步驟A~步驟F而得到積層體之步驟、與將前述積層體燒結之步驟;步驟A:將感光性絕緣性陶瓷組成物塗布而得到塗布膜之步驟,步驟B:將前述塗布膜乾燥而得到乾燥膜之步驟,步驟C:將前述乾燥膜曝光及顯影而得到絕緣性陶瓷層之步驟,步驟D:在前述絕緣性陶瓷層上,塗布本發明之感光性導電糊而得到塗布膜之步驟,步驟E:將前述塗布膜乾燥而得到乾燥膜之步驟,步驟F:將前述乾燥膜曝光及顯影而得到電路圖案之步驟。 Furthermore, the present invention is a method for manufacturing an electronic component, comprising: a step of obtaining a laminate by sequentially repeating the following steps A to F multiple times on an insulating ceramic layer with a circuit pattern obtained by the method for manufacturing an insulating ceramic layer with a circuit pattern of the present invention, and a step of sintering the laminate; Step A: a step of applying a photosensitive insulating ceramic composition to obtain a coating film, Step B: A: Drying the coating film to obtain a dry film. C: Exposing and developing the dry film to obtain an insulating ceramic layer. D: Applying the photosensitive conductive paste of the present invention on the insulating ceramic layer to obtain a coating film. E: Drying the coating film to obtain a dry film. F: Exposing and developing the dry film to obtain a circuit pattern.

又,本發明係一種附電路圖案之基板的製造方法,其特徵為包含:將感光性絕緣性陶瓷組成物塗布於基材之步驟、將前述感光性絕緣性陶瓷組成物之塗膜曝光成所欲之圖案之步驟、將前述經曝光之感光性絕緣性陶瓷組成物之塗膜顯影而形成具有溝之絕緣層之步驟、將本發明之感光性導電糊塗布於前述絕緣層上及前述溝內之步驟、 使前述感光性導電糊之塗膜對應於前述溝而曝光之步驟、以及 將前述經曝光之感光性導電糊之塗膜顯影而在對應於前述溝之位置形成電路圖案之步驟; 前述溝係在側面具有錐體形狀。 The present invention is also directed to a method for manufacturing a circuit patterned substrate, characterized by comprising the steps of: coating a photosensitive insulating ceramic composition on a substrate; exposing the photosensitive insulating ceramic composition coating to a desired pattern; developing the exposed photosensitive insulating ceramic composition coating to form an insulating layer having trenches; coating the photosensitive conductive paste of the present invention on the insulating layer and within the trenches; exposing the photosensitive conductive paste coating to the trenches; and The exposed photosensitive conductive paste film is developed to form a circuit pattern at locations corresponding to the trenches. The trenches have a pyramidal shape on their sides.

又,本發明係一種電感器的製造方法,其特徵為在步驟包含本發明之附電路圖案之基板的製造方法。Furthermore, the present invention is a method for manufacturing an inductor, characterized in that the method comprises the steps of manufacturing a substrate with a circuit pattern according to the present invention.

只要藉由本發明之感光性導電糊,則可製作高精細且燒結時的收縮量小的電路圖案。By using the photosensitive conductive paste of the present invention, it is possible to produce high-precision circuit patterns with little shrinkage during sintering.

[用以實施發明的形態][Form used to implement the invention]

<感光性導電糊> 本發明之感光性導電糊含有導電性粒子(A)及感光性有機成分(B)。 <Photosensitive Conductive Paste> The photosensitive conductive paste of the present invention contains conductive particles (A) and a photosensitive organic component (B).

<導電性粒子(A)> 本發明之感光性導電糊含有導電性粒子(A)。作為導電性粒子(A),例如可列舉:銀、金、銅、鉑、鈀、錫、鎳、鋁、鎢、鉬、氧化釕、鉻、鈦、銦等金屬和此等之合金的粉末、碳粉末等。亦可含有此等2種以上。從導電性的觀點來看,此等之中又以銀、銅、金為較佳,從成本及安定性的觀點來看,銀為更佳。 <Conductive Particles (A)> The photosensitive conductive paste of the present invention contains conductive particles (A). Examples of conductive particles (A) include metals such as silver, gold, copper, platinum, palladium, tin, nickel, aluminum, tungsten, molybdenum, ruthenium oxide, chromium, titanium, and indium, as well as powders of their alloys and carbon powder. Two or more of these metals may also be included. From the perspective of conductivity, silver, copper, and gold are preferred, and from the perspectives of cost and stability, silver is particularly preferred.

導電性粒子(A)之粒徑分布的中位直徑r為3.0μm以上6.0μm以下係屬重要。藉由r為3.0μm以上,較佳為3.5μm以上,更佳為4.0μm以上,可抑制在燒結步驟中導電性粒子(A)之移動,縮小燒結時的收縮量。又,可抑制在曝光步驟中塗膜之透光性降低而在顯影時發生剝離等變得難以形成微細的圖案之情形。另一方面,藉由r為6.0μm以下,較佳為5.5μm以下,更佳為5.0μm以下,可抑制燒結時的導電性粉末彼此的接觸機率降低而導電圖案之體積電阻率增加之情形。又,微細配線中的配線端部之直進性提升,可抑制配線彼此的短路。It is important that the median diameter r of the particle size distribution of the conductive particles (A) is greater than 3.0 μm and less than 6.0 μm. By having r greater than 3.0 μm, preferably greater than 3.5 μm, and more preferably greater than 4.0 μm, the movement of the conductive particles (A) during the sintering step can be suppressed, minimizing the amount of shrinkage during sintering. Furthermore, it is possible to prevent the light transmittance of the coating from being reduced during the exposure step, resulting in peeling during development and making it difficult to form fine patterns. On the other hand, by having r less than 6.0 μm, preferably less than 5.5 μm, and more preferably less than 5.0 μm, it is possible to prevent the probability of contact between the conductive powders during sintering, which can reduce the volume resistivity of the conductive pattern. Furthermore, the straightness of the wiring ends in fine wiring is improved, which can prevent short circuits between wirings.

在本發明中,中位直徑可使用粒度分布測定裝置(日機裝(股)製「Microtrac」HRA Model No.9320-X100),藉由雷射光散射法而測定。In the present invention, the median diameter can be measured by a laser light scattering method using a particle size distribution measuring apparatus ("Microtrac" HRA Model No. 9320-X100 manufactured by Nikkiso Co., Ltd.).

全固體成分中的導電性粒子(A)之含量V 1為37體積%以上55體積%以下係屬重要。藉由V 1為37體積%以上,較佳為40體積%以上,更佳為42體積%以上,可將在燒結時消失的固體成分量抑制為少,將收縮量抑制為小。另一方面,藉由V 1為55體積%以下,較佳為52體積%以下,更佳為50體積%以下,可防止在曝光步驟中塗膜之透光性降低而變得難以形成微細的圖案之情形。 It is important that the content V1 of the conductive particles (A) in the total solids content is 37 volume % or more and 55 volume % or less. By keeping V1 at 37 volume % or more, preferably 40 volume % or more, and more preferably 42 volume % or more, the amount of solids lost during sintering can be minimized, thereby minimizing shrinkage. On the other hand, by keeping V1 at 55 volume % or less, preferably 52 volume % or less, and more preferably 50 volume % or less, the coating's light transmittance can be prevented from being reduced during the exposure step, making it difficult to form fine patterns.

本發明中的導電性粒子(A)之體積、後述的導電性粒子以外的無機粒子(C)之體積、及感光性有機成分(B)之固體成分之體積的測定方法係如下。首先,將糊過濾,分離為導電性粒子及無機粒子之混合物、與感光性有機成分(B)之固體成分。導電性粉末及無機粒子係分級而測定導電性粉末及無機粒子各別的質量。有機成分係在100℃下乾燥2小時,測定乾燥後的質量。可從各成分之質量與密度算出體積。The volume of the conductive particles (A), the volume of the inorganic particles other than the conductive particles (C) described below, and the solid volume of the photosensitive organic component (B) in the present invention are determined as follows. First, the paste is filtered to separate into a mixture of conductive and inorganic particles and the solid content of the photosensitive organic component (B). The conductive powder and inorganic particles are then fractionated and their respective masses are measured. The organic component is dried at 100°C for 2 hours, and the post-drying mass is measured. The volume can be calculated from the mass and density of each component.

<感光性有機成分(B)> 本發明之感光性導電糊含有感光性有機成分(B)。在本發明中,感光性有機成分係指至少部分包含對光反應而性狀變化、或使變化的成分之有機成分之群組。亦即,不需為:構成本發明中的感光性有機成分之全部成分都有助於感光性。 <Photosensitive Organic Component (B)> The photosensitive conductive paste of the present invention contains a photosensitive organic component (B). In the present invention, a photosensitive organic component refers to a group of organic components that at least partially contains a component that changes its properties or causes a change in response to light. In other words, not all components of the photosensitive organic component in the present invention need contribute to photosensitivity.

感光性有機成分(B)可理想地使用包含鹼可溶性樹脂、光聚合起始劑、及溶劑者。在此,鹼可溶性樹脂係指具有鹼可溶性基之樹脂。作為鹼可溶性基,例如可列舉:羧基、苯酚性羥基、磺酸基、硫醇基等。從對於鹼顯影液之溶解性高來看,其中又以羧基為較佳。The photosensitive organic component (B) preferably comprises an alkali-soluble resin, a photopolymerization initiator, and a solvent. Here, an alkali-soluble resin refers to a resin having an alkali-soluble group. Examples of alkali-soluble groups include carboxyl groups, phenolic hydroxyl groups, sulfonic acid groups, and thiol groups. Carboxyl groups are particularly preferred due to their high solubility in alkaline developers.

作為鹼可溶性樹脂,係以丙烯酸樹脂為較佳,具有碳-碳雙鍵之丙烯酸系單體與其它單體之共聚物為較佳。As the alkali-soluble resin, acrylic resin is preferred, and copolymers of acrylic monomers having carbon-carbon double bonds and other monomers are preferred.

作為具有碳-碳雙鍵之丙烯酸系單體,例如可列舉: 丙烯酸甲酯、丙烯酸乙酯、丙烯酸正丙酯、丙烯酸異丙酯、丙烯酸正丁酯、丙烯酸異丁酯、丙烯酸三級丁酯、丙烯酸正戊酯、丙烯酸異癸酯、丙烯酸異辛酯、丙烯酸2-乙基己酯、丙烯酸烯丙酯、丙烯酸月桂酯、丙烯酸硬脂酯等具有碳數1~18之鏈狀脂肪族烴基的丙烯酸酯; 丙烯酸苄酯、丙烯酸苯酯、丙烯酸1-萘酯、丙烯酸2-萘酯等具有碳數6~10之環狀芳香族烴基的丙烯酸酯; 丙烯酸環己酯、丙烯酸二環戊烷酯、丙烯酸4-三級丁基環己酯、丙烯酸二環戊烯酯、丙烯酸二環戊二烯酯、丙烯酸異莰酯、丙烯酸3,3,5-三甲基環己酯等具有碳數6~15之環狀脂肪族烴基的丙烯酸酯、 將此等丙烯酸酯替換為甲基丙烯酸酯者等。亦可使用此等2種以上。 Examples of acrylic monomers having carbon-carbon double bonds include: Acrylic esters having a carbon-carbon double bond and a carbon chain aliphatic hydrocarbon group with 1 to 18 carbon atoms, such as methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, isobutyl acrylate, tertiary butyl acrylate, n-pentyl acrylate, isodecyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, allyl acrylate, lauryl acrylate, and stearyl acrylate; Acrylic esters having a carbon-carbon double bond and a carbon chain aromatic hydrocarbon group with 6 to 10 carbon atoms, such as benzyl acrylate, phenyl acrylate, 1-naphthyl acrylate, and 2-naphthyl acrylate; Acrylates having a cyclic aliphatic hydrocarbon group with 6 to 15 carbon atoms, such as cyclohexyl acrylate, dicyclopentyl acrylate, 4-tert-butylcyclohexyl acrylate, dicyclopentenyl acrylate, dicyclopentadienyl acrylate, isobornyl acrylate, and 3,3,5-trimethylcyclohexyl acrylate; These acrylates may be replaced with methacrylates. Two or more of these may also be used.

作為丙烯酸系單體以外的共聚合成分,例如可列舉: 苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、α-甲基苯乙烯、氯甲基苯乙烯、羥基甲基苯乙烯等苯乙烯類; 丙烯酸、甲基丙烯酸、伊康酸、巴豆酸、馬來酸、富馬酸、乙酸乙烯酯等不飽和羧酸和此等之酸酐等。 亦可使用此等2種以上。 Examples of copolymerization components other than acrylic monomers include: Styrenes such as styrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, α-methylstyrene, chloromethylstyrene, and hydroxymethylstyrene; Unsaturated carboxylic acids such as acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, and vinyl acetate, and their anhydrides. Two or more of these may also be used.

丙烯酸樹脂,係以在側鏈或分子末端具有碳-碳雙鍵為較佳,可使曝光時的硬化反應速度提升。作為具有碳-碳雙鍵之結構,例如可列舉:乙烯基、烯丙基、丙烯酸基、甲基丙烯酸基等。亦可具有此等2種以上。Acrylic resins preferably have carbon-carbon double bonds in the side chains or at the molecular ends, which can increase the curing reaction speed during exposure. Examples of structures with carbon-carbon double bonds include vinyl, allyl, acrylic, and methacrylic groups. Two or more of these groups may also be present.

作為將碳-碳雙鍵導入丙烯酸樹脂之方法,例如可列舉:使具有環氧丙基或異氰酸酯基與碳-碳雙鍵之化合物、丙烯醯氯、甲基丙烯醯氯、烯丙氯等,對於丙烯酸樹脂中的巰基、胺基、羥基、羧基反應之方法等。Examples of methods for introducing carbon-carbon double bonds into acrylic resins include reacting compounds containing epoxypropyl or isocyanate groups and carbon-carbon double bonds, acryloyl chloride, methacryloyl chloride, allyl chloride, etc., with alkyl, amino, hydroxyl, or carboxyl groups in acrylic resins.

作為具有環氧丙基與碳-碳雙鍵之化合物,例如可列舉:甲基丙烯酸環氧丙酯、丙烯酸環氧丙酯、烯丙基環氧丙基醚、丙烯酸環氧丙基乙酯、巴豆醯基環氧丙基醚、巴豆酸環氧丙酯、異巴豆酸環氧丙酯、Daicel Chemical Industries(股)製「CYCLOMER」(註冊商標)M100、A200等。亦可使用此等2種以上。Examples of compounds having a glycidyl group and a carbon-carbon double bond include glycidyl methacrylate, glycidyl acrylate, allyl glycidyl ether, glycidyl ethyl acrylate, crotonyl glycidyl ether, glycidyl crotonate, glycidyl isocrotonate, and "CYCLOMER" (registered trademark) M100 and A200 manufactured by Daicel Chemical Industries, Ltd. Two or more of these may be used.

作為具有異氰酸酯基與碳-碳雙鍵之化合物,例如可列舉:異氰酸丙烯醯酯、異氰酸甲基丙烯醯酯、異氰酸丙烯醯基乙酯、異氰酸甲基丙烯醯基乙酯等。亦可使用此等2種以上。Examples of compounds having an isocyanate group and a carbon-carbon double bond include acryloyl isocyanate, methacryloyl isocyanate, ethyl acryloyl isocyanate, and methacryloyl ethyl isocyanate. Two or more of these may be used.

光聚合起始劑係指吸收紫外線等短波長的光而分解、或藉由奪氫反應而產生自由基之化合物。Photopolymerization initiators are compounds that absorb short-wavelength light such as ultraviolet light and decompose, or generate free radicals through hydrogen abstraction reactions.

作為吸收紫外線等光而分解之光聚合起始劑,例如可列舉:1,2-辛二酮、二苯基酮、鄰苯甲醯基苯甲酸甲酯、4,4’-雙(二甲基胺基)二苯基酮、4,4’-雙(二乙基胺基)二苯基酮、4-苯甲醯基-4’-甲基二苯基酮、二苄基酮、2,2’-二乙氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2-羥基-2-甲基苯丙酮、米其勒酮、2-甲基-[4-(甲硫基)苯基]-2-(4-啉基)-1-丙酮(2-methyl[4-(methylthio)phenyl]-2-morpholinopropan-1-one)、4-疊氮亞苄基苯乙酮、2,6-雙(對疊氮亞苄基)環己酮、6-雙(對疊氮亞苄基)-4-甲基環己酮等烷基苯酮系光聚合起始劑;2,4,6-三甲基苯甲醯基-二苯基-膦氧化物、雙(2,4,6-三甲基苯甲醯基)-苯基膦氧化物等醯基膦氧化物系光聚合起始劑;1-[4-(苯基硫)-2-(O-苯甲醯基肟)]、乙酮,1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯肟)(ethanone,1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-,1-(O-acetyloxime))、1-苯基-1,2-丁二酮-2-(O-甲氧基羰基)肟、1-苯基-丙二酮-2-(O-乙氧基羰基)肟、1-苯基-丙二酮-2-(O-苯甲醯基)肟、1,3-二苯基-丙三酮-2-(O-乙氧基羰基)肟、1-苯基-3-乙氧基-丙三酮-2-(O-苯甲醯基)肟之肟酯系光聚合起始劑等。 Examples of photopolymerization initiators that decompose upon absorption of ultraviolet light include 1,2-octanedione, diphenyl ketone, methyl o-benzoylbenzoate, 4,4'-bis(dimethylamino)diphenyl ketone, 4,4'-bis(diethylamino)diphenyl ketone, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, 2,2'-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methylpropiophenone, Michler's ketone, 2-methyl-[4-(methylthio)phenyl]-2-(4- Alkyl phenone-based photopolymerization initiators such as 2-methyl[4-(methylthio)phenyl]-2-morpholinopropan-1-one, 4-azidobenzylideneacetophenone, 2,6-bis(p-azidobenzylidene)cyclohexanone, and 6-bis(p-azidobenzylidene)-4-methylcyclohexanone; acylphosphine oxide-based photopolymerization initiators such as 2,4,6-trimethylbenzyl-diphenyl-phosphine oxide and bis(2,4,6-trimethylbenzyl)-phenylphosphine oxide; 1-[4-(phenylthio)-2-(O-benzoyloxime)], ethyl ketone, 1-[9-ethyl-6-(2-methylbenzyl)- Oxime esters of 1-phenyl-1,2-butanedione-2-(O-methoxycarbonyl)oxime, 1-phenyl-propanedione-2-(O-ethoxycarbonyl)oxime, 1-phenyl-propanedione-2-(O-benzoyl)oxime, 1,3-diphenyl-propanedione-2-(O-ethoxycarbonyl)oxime, and 1-phenyl-3-ethoxy-propanedione-2-(O-benzoyl)oxime are photopolymerization initiators.

作為藉由奪氫反應而產生自由基之光聚合起始劑,例如可列舉:二苯基酮、蒽醌、噻噸酮、苯乙醛酸甲酯等。亦可含有此等2種以上。 Examples of photopolymerization initiators that generate free radicals through hydrogen abstraction reactions include phenyl ketone, anthraquinone, thioxanthine, and methyl phenylglyoxylate. Two or more of these may also be included.

溶劑係設為使構成感光性導電糊之成分溼潤或溶解,塗布性優異者。 The solvent is used to moisten or dissolve the components of the photosensitive conductive paste, providing excellent coating properties.

作為溶劑,例如可列舉:N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、N-甲基-2-吡咯啶酮、二甲基咪唑啶酮、二甲基亞碸、二乙二醇單乙醚、二丙二醇甲醚、二丙二醇正丙醚、二丙二醇正丁醚、三丙二醇甲醚、三丙二醇正丁醚、二乙二醇單乙醚乙酸酯、二丙二醇甲醚乙酸酯、丙二醇苯基醚、二乙二醇單甲醚乙酸酯、二乙二醇單丁醚、二乙二醇單丁醚乙酸酯、γ-丁內酯、乳酸乙酯、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、乙二醇單正丙醚、二丙酮醇、四氫糠醇、丙二醇單甲醚乙酸酯等。亦可含有此等2種以上。Examples of the solvent include N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl-2-pyrrolidone, dimethylimidazolidinone, dimethyl sulfoxide, diethylene glycol monoethyl ether, dipropylene glycol methyl ether, dipropylene glycol n-propyl ether, dipropylene glycol n-butyl ether, tripropylene glycol methyl ether, tripropylene glycol n-butyl ether, diethylene glycol monoethyl ether acetate, dipropylene glycol methyl ether acetate, propylene glycol phenyl ether, diethylene glycol monomethyl ether acetate, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, γ-butyrolactone, ethyl lactate, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, ethylene glycol mono-n-propyl ether, diacetone alcohol, tetrahydrofurfuryl alcohol, and propylene glycol monomethyl ether acetate. Two or more of these may be contained.

感光性有機成分(B)亦可在未損及其所欲之特性的範圍,含有感光性單體、分散劑、塑化劑、均平劑、界面活性劑、矽烷偶合劑、除泡劑、安定劑等。The photosensitive organic component (B) may also contain a photosensitive monomer, a dispersant, a plasticizer, a leveling agent, a surfactant, a silane coupling agent, a defoaming agent, a stabilizer, etc., within a range that does not impair the desired properties.

<導電性粒子(A)以外的無機粒子(C)> 本發明之感光性導電糊,係以進一步含有導電性粒子(A)以外的無機粒子(C)為較佳。藉由含有該無機粒子(C),可阻礙導電性粒子(A)彼此的燒結,有效地抑制感光性導電糊之燒結時的收縮量。 <Inorganic Particles (C) Other Than Conductive Particles (A)> The photosensitive conductive paste of the present invention preferably further contains inorganic particles (C) other than the conductive particles (A). The inclusion of these inorganic particles (C) prevents sintering of the conductive particles (A), effectively suppressing shrinkage of the photosensitive conductive paste during sintering.

作為無機粒子(C),係以含有選自包含氧化鈦、氧化鋁、氧化矽、堇青石、富鋁紅柱石、尖晶石、鈦酸鋇及氧化鋯之群組中的至少一個為較佳。其中,尤其又可理想地使用氧化鋁、氧化鈦、氧化矽,從微細加工性的觀點來看,係以氧化矽為進一步較佳。The inorganic particles (C) preferably contain at least one selected from the group consisting of titanium oxide, aluminum oxide, silicon oxide, cordierite, andalusite, spinel, barium titanate, and zirconium oxide. Among these, aluminum oxide, titanium oxide, and silicon oxide are particularly preferred, and silicon oxide is particularly preferred from the perspective of micromachinability.

前述無機粒子(C)之粒徑分布的中位直徑,係以1~100nm為較佳。藉由前述無機粒子(C)之粒徑分布的中位直徑為1nm以上,可阻礙導電性粉末彼此的燒結而更抑制收縮量。另一方面,藉由中位直徑為100nm以下,可縮小燒結後所得之電路圖案的電阻值。The median diameter of the particle size distribution of the inorganic particles (C) is preferably 1 to 100 nm. A median diameter of 1 nm or greater in the particle size distribution of the inorganic particles (C) prevents sintering of the conductive powder and further suppresses shrinkage. Furthermore, a median diameter of 100 nm or less reduces the resistance of the resulting circuit pattern after sintering.

相對於前述導電性粒子(A)100體積%之前述無機粒子(C)的體積比率V 2係以3體積%以上10體積%以下為較佳。藉由V 2為3體積%以上,更佳為3.5體積%以上,進一步較佳為4體積%以上,可阻礙燒結時的導電性粉末之移動而更抑制燒結時的收縮量。另一方面,藉由V 2為10體積%以下,更佳為7體積%以下,進一步較佳為5.5體積%以下,可縮小燒結後所得之電路圖案的電阻值。 The volume ratio V2 of the inorganic particles (C) relative to 100 volume % of the conductive particles (A) is preferably 3 volume % or more and 10 volume % or less. By setting V2 to 3 volume % or more, more preferably 3.5 volume % or more, and even more preferably 4 volume % or more, migration of the conductive powder during sintering can be inhibited, further suppressing shrinkage during sintering. Furthermore, by setting V2 to 10 volume % or less, more preferably 7 volume % or less, and even more preferably 5.5 volume % or less, the resistance of the resulting circuit pattern can be reduced after sintering.

本發明之感光性導電糊係以前述r、V 1、V 2之積r×V 1×V 2為500以上3300以下為較佳。藉由r×V 1×V 2為500以上,更佳為600以上,進一步較佳為700以上,可更抑制燒結時的收縮量。另一方面,藉由r×V 1×V 2為3300以下,更佳為2500以下,進一步較佳為1500以下,可防止收縮過少所致之與介電質層的收縮率不整合,防止介電質與電極間產生空隙(void)。 The photosensitive conductive paste of the present invention preferably has a product of r, V1 , and V2 (r× V1 × V2) of 500 to 3300. By setting r× V1 × V2 to 500 or more, more preferably 600 or more, and even more preferably 700 or more, shrinkage during sintering can be further suppressed. On the other hand, by setting r× V1 × V2 to 3300 or less, more preferably 2500 or less, and even more preferably 1500 or less, insufficient shrinkage, which could lead to a mismatch in shrinkage with the dielectric layer, can be prevented, thereby preventing the formation of voids between the dielectric and the electrode.

<感光性導電糊之製造> 本發明之感光性導電糊,例如可藉由使導電性粒子(A)、溶劑以外的感光性有機成分(B)溶解及/或分散於溶劑而得,較佳為再進一步使無機粒子(C)溶解及/或分散於溶劑而得。作為使其溶解及/或分散之裝置,例如可列舉:三輥機、球磨機等分散機和混練機等。 <Production of Photosensitive Conductive Paste> The photosensitive conductive paste of the present invention can be obtained by dissolving and/or dispersing conductive particles (A) and a photosensitive organic component (B) other than the solvent in a solvent. Preferably, inorganic particles (C) are further dissolved and/or dispersed in the solvent. Examples of dissolving and/or dispersing apparatus include a three-roller disperser, a ball mill, and a kneading machine.

<硬化物> 其次,針對硬化物進行說明。本發明之硬化物係將本發明之感光性導電糊硬化而成。 <Cured Product> Next, the cured product will be described. The cured product of the present invention is formed by curing the photosensitive conductive paste of the present invention.

本發明之硬化物的形狀並無特別限制。The shape of the cured product of the present invention is not particularly limited.

從導電性的觀點來看,本發明之硬化物之膜厚t係以5μm以上為較佳,10μm以上為更佳。另一方面,從形成至微小面積部之微細圖案形成性的觀點來看,35μm以下為較佳,30μm以下為更佳,20μm以下為進一步較佳。From the perspective of electrical conductivity, the film thickness t of the cured product of the present invention is preferably 5 μm or greater, more preferably 10 μm or greater. On the other hand, from the perspective of forming fine patterns onto small areas, the film thickness t is preferably 35 μm or less, more preferably 30 μm or less, and even more preferably 20 μm or less.

硬化物亦可具有規定的圖案形狀。作為圖案形狀,例如可列舉:條紋形狀、螺旋形狀等。The cured product may also have a predetermined pattern shape. Examples of such pattern shapes include stripes and spirals.

硬化物係以膜厚t與線寬w之比值t/w為0.5以上1.0以下為較佳。藉由t/w為0.5以上1.0以下,可得到高長寬比之配線,可兼具微細配線與低電阻值。The best ratio of film thickness t to line width w for the cured material is t/w, which is greater than 0.5 and less than 1.0. With a t/w ratio of 0.5 to 1.0, a high aspect ratio wiring can be achieved, achieving both fine wiring and low resistance.

又,硬化物係以相對於頂部寬度a之底部寬度b之比值b/a為0.6以上1.0以下為較佳。藉由b/a為0.6以上1.0以下,可得到剖面積大且低電阻的配線。Furthermore, the cured material preferably has a ratio (b/a) of the bottom width (b) to the top width (a) of 0.6 or more and 1.0 or less. By having b/a of 0.6 or more and 1.0 or less, a wiring with a large cross-section and low resistance can be obtained.

亦可將硬化物積層而作成積層體。積層數係以1~30層為較佳。藉由將積層數設為1層以上,可增大規定的圖案之厚度。另一方面,藉由將積層數設為30層以下,可縮小層間的校準偏差之影響。The cured material can also be stacked to create a laminate. The preferred number of layers is 1 to 30. By setting the number of layers to 1 or more, the thickness of the specified pattern can be increased. On the other hand, by setting the number of layers to 30 or less, the impact of inter-layer alignment deviation can be reduced.

<硬化物之製造> 硬化物,例如可藉由將本發明之感光性導電糊塗布於基材上並乾燥,藉由曝光而使其光硬化而得。當製造圖案形狀的硬化物時,亦可在圖案曝光後,藉由顯影而形成圖案。 <Production of Cured Articles> A cured article can be obtained, for example, by applying the photosensitive conductive paste of the present invention to a substrate, drying it, and then photocuring it by exposure. When producing a cured article with a pattern, the pattern can be formed by exposure and then developing the image.

作為塗布步驟中的塗布方法,例如可列舉:使用旋轉器之旋轉塗布、噴霧塗布、輥塗、絲網印刷、平版印刷、凹版印刷、活版印刷、柔版印刷、使用刀塗機、模塗機、簾塗機、彎月面塗布機(meniscus coater)或棒塗機之方法。從所得之塗布膜的表面平坦性優異,藉由選擇網版而易於調整膜厚來看,其中又以絲網印刷為較佳。Examples of coating methods used in the coating step include rotary coating using a rotary machine, spray coating, roll coating, screen printing, offset printing, gravure printing, letterpress printing, flexographic printing, and methods using knife coaters, die coaters, curtain coaters, meniscus coaters, or rod coaters. Screen printing is particularly preferred because the resulting coated film has excellent surface flatness and film thickness can be easily adjusted by selecting a screen.

作為乾燥方法,例如可列舉:使用烘箱、加熱板、紅外線等加熱裝置之加熱乾燥、真空乾燥等。加熱溫度係以40~130℃為較佳。藉由將乾燥溫度設為40℃以上,可效率良好地揮發去除溶媒。另一方面,藉由將乾燥溫度設為130℃以下,可抑制感光性導電糊之熱交聯,減少後述的曝光・顯影步驟中的非曝光部之殘渣,輕易形成更高精細的圖案。加熱時間係以5分鐘~1小時為較佳。Drying methods include heat drying using a heating device such as an oven, hot plate, or infrared ray, as well as vacuum drying. Heating temperatures of 40°C to 130°C are preferred. A drying temperature above 40°C allows for efficient solvent removal by volatilization. Meanwhile, a drying temperature below 130°C inhibits thermal crosslinking of the photosensitive conductive paste, reducing residue in non-exposed areas during the subsequent exposure and development steps, facilitating the formation of finer patterns. Heating time is preferably between 5 minutes and 1 hour.

作為曝光方法,有隔著光罩而曝光之方法、不使用光罩而曝光之方法。作為不使用光罩之曝光方法,可列舉:進行全面曝光之方法、使用雷射光等而進行直接成像之方法等。作為曝光裝置,例如可列舉:步進曝光機、接近式曝光機等。作為曝光之活性光線,例如可列舉:近紫外線、紫外線、電子束、X光、雷射光等,紫外線為較佳。作為紫外線之光源,例如可列舉:低壓汞燈、高壓汞燈、超高壓汞燈、鹵素燈、殺菌燈等,超高壓汞燈為較佳。Exposure methods include those using a mask and those without a mask. Maskless exposure methods include full-surface exposure and direct imaging using laser light. Examples of exposure equipment include steppers and proximity scanners. Active light sources for exposure include near-ultraviolet light, ultraviolet light, electron beams, X-rays, and laser light, with ultraviolet light being preferred. Ultraviolet light sources include low-pressure mercury lamps, high-pressure mercury lamps, ultrahigh-pressure mercury lamps, halogen lamps, and germicidal lamps, with ultrahigh-pressure mercury lamps being preferred.

作為進行鹼顯影之情形的顯影液,例如可列舉:氫氧化四甲基銨、二乙醇胺、二乙基胺基乙醇、氫氧化鈉、氫氧化鉀、碳酸鈉、碳酸鉀、三乙胺、二乙胺、甲胺、二甲胺、乙酸二甲基胺基乙酯、二甲基胺基乙醇、甲基丙烯酸二甲基胺基乙酯、環己胺、乙二胺、己二胺等之水溶液。Examples of the developer in the case of alkaline development include aqueous solutions of tetramethylammonium hydroxide, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine.

亦可於此等水溶液添加:N-甲基-2-吡咯啶酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、二甲基亞碸、γ-丁內酯等極性溶媒;甲醇、乙醇、異丙醇等醇類;乳酸乙酯、丙二醇單甲醚乙酸酯等酯類;環戊酮、環己酮、異丁酮、甲基異丁酮等酮類;界面活性劑等。To these aqueous solutions may also be added polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, and γ-butyrolactone; alcohols such as methanol, ethanol, and isopropyl alcohol; esters such as ethyl lactate and propylene glycol monomethyl ether acetate; ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, and methyl isobutyl ketone; and surfactants.

作為顯影方法,例如可列舉:一邊使形成乾燥膜之基材靜置或旋轉一邊將顯影液噴霧於曝光後的乾燥膜之方法、將形成曝光後的乾燥膜之基材浸漬於顯影液中之方法、一邊將形成曝光後的乾燥膜之基材浸漬於顯影液中一邊施加超音波之方法等。Examples of developing methods include a method of spraying a developer onto the exposed dry film while the substrate with the dried film formed thereon is allowed to stand still or rotate, a method of immersing the substrate with the dried film formed thereon in the developer, and a method of applying ultrasonic waves while immersing the substrate with the dried film formed thereon in the developer.

亦可對於藉由顯影所得之硬化物藉由清洗液實施清洗處理。作為清洗液,例如可列舉:水;乙醇、異丙醇等醇類之水溶液;乳酸乙酯、丙二醇單甲醚乙酸酯等酯類之水溶液等。The hardened product obtained by development can also be cleaned with a cleaning solution. Examples of the cleaning solution include water; aqueous solutions of alcohols such as ethanol and isopropyl alcohol; and aqueous solutions of esters such as ethyl lactate and propylene glycol monomethyl ether acetate.

<燒結體> 本發明之燒結體係將前述的本發明之感光性導電糊燒結而成。 <Sintered Body> The sintered body of the present invention is formed by sintering the aforementioned photosensitive conductive paste of the present invention.

作為燒結方法,例如可列舉:在300~600℃下熱處理5分鐘~數小時後,進一步在850~900℃下熱處理5分鐘~數小時之方法等。Examples of sintering methods include heat treatment at 300-600°C for 5 minutes to several hours, followed by further heat treatment at 850-900°C for 5 minutes to several hours.

<電子零件> 本發明之電子零件包含本發明之燒結體及絕緣性陶瓷層。藉由具有絕緣性陶瓷層,可抑制燒結體間的非故意短路。 <Electronic Components> The electronic component of the present invention comprises a sintered body and an insulating ceramic layer. The insulating ceramic layer can suppress unintentional short circuits between sintered bodies.

絕緣性陶瓷層之組成,係以換算為氧化物SiO 225~50(質量%)、Al 2O 330~60(質量%)、B 2O 35~20(質量%)、K 2O 0.3~3(質量%)為較佳。藉由設成該組成,變得易於得到下述的相對介電常數ε。 The insulating ceramic layer preferably has a composition of SiO 2 25-50 (mass%), Al 2 O 3 30-60 (mass%), B 2 O 3 5-20 (mass%), and K 2 O 0.3-3 (mass%), calculated as oxides. This composition facilitates achieving the relative dielectric constant ε described below.

絕緣性陶瓷層之相對介電常數ε係以3.0以上6.0以下為較佳。藉由將ε設為6.0以下,在將附電路圖案之絕緣性陶瓷層應用於積層晶片電感器時,可得到損失少的高性能的電感器。又,藉由將ε設為3.0以上,可提高機械強度。The relative dielectric constant ε of the insulating ceramic layer is preferably between 3.0 and 6.0. Setting ε to 6.0 or less allows for a high-performance inductor with minimal loss when using the insulating ceramic layer with a circuit pattern in a multilayer chip inductor. Furthermore, setting ε to 3.0 or greater improves mechanical strength.

本發明之電子零件亦可在燒結體與絕緣性陶瓷層之外部具有端子電極。作為構成端子電極之材料,例如可列舉:鎳和錫等。The electronic component of the present invention may also have terminal electrodes outside the sintered body and the insulating ceramic layer. Examples of materials for forming the terminal electrodes include nickel and tin.

<附電路圖案之絕緣性陶瓷層的製造方法> 本發明之附電路圖案之絕緣性陶瓷層的製造方法之一具有:將本發明之感光性導電糊塗布於絕緣性陶瓷層上而得到塗布膜之塗布步驟、將前述塗布膜乾燥而得到乾燥膜之步驟、與將前述乾燥膜曝光及顯影而得到電路圖案之步驟。 <Method for Manufacturing an Insulating Ceramic Layer with a Circuit Pattern> One method for manufacturing an insulating ceramic layer with a circuit pattern of the present invention comprises: a coating step of applying the photosensitive conductive paste of the present invention onto an insulating ceramic layer to form a coating film; a step of drying the coating film to form a dried film; and a step of exposing and developing the dried film to form a circuit pattern.

首先,將本發明之感光性導電糊塗布於絕緣性陶瓷層上而得到塗布膜。First, the photosensitive conductive paste of the present invention is coated on an insulating ceramic layer to obtain a coating film.

絕緣性陶瓷層,係將絕緣性陶瓷組成物或者感光性絕緣性陶瓷組成物全面或者部分,塗布於氧化鋁、石英玻璃、鈉鈣玻璃、化學強化玻璃、「Pyrex」(註冊商標)玻璃、合成石英板、環氧樹脂基板、聚醚醯亞胺樹脂基板、聚醚酮樹脂基板、聚碸系樹脂基板、聚對苯二甲酸乙二酯薄膜(以下稱為「PET薄膜」)、環烯烴聚合物薄膜、聚醯亞胺薄膜、聚酯薄膜、聚芳醯胺薄膜等包含樹脂之透明薄膜、光學用樹脂板等之上,進行乾燥而得。The insulating ceramic layer is obtained by coating an insulating ceramic composition or a photosensitive insulating ceramic composition entirely or partially on a transparent film containing a resin such as alumina, quartz glass, sodium calcium glass, chemically strengthened glass, "Pyrex" (registered trademark) glass, synthetic quartz plate, epoxy resin substrate, polyetherimide resin substrate, polyetherketone resin substrate, polysulfone resin substrate, polyethylene terephthalate film (hereinafter referred to as "PET film"), cycloolefin polymer film, polyimide film, polyester film, polyarylamide film, or optical resin plate, and then drying the coating.

作為塗布方法,可使用:絲網印刷法、棒塗機、輥塗機、模塗機、刀塗機等方法。As coating methods, screen printing, rod coating, roll coating, die coating, knife coating, etc. can be used.

當使用感光性絕緣性陶瓷組成物時,亦可藉由光刻法而進行圖案形成。When using a photosensitive insulating ceramic composition, patterning can also be performed by photolithography.

絕緣性陶瓷組成物,係以含有絕緣性陶瓷粉末、黏合劑樹脂及溶劑為較佳。作為絕緣性陶瓷粉末,例如可列舉:「Pal Serum」(註冊商標)BT149(製品名;日本化學工業(股)製)、L5(製品名;Ferro corp.製)、SG-200(製品名;Nippon Talc(股)製)等。亦可含有此等2種以上。作為黏合劑樹脂,例如可列舉:丙烯酸樹脂、聚乙烯丁醛樹脂、聚乙烯醇樹脂、纖維素樹脂、甲基纖維素樹脂等。亦可含有此等2種以上。The insulating ceramic composition preferably contains insulating ceramic powder, a binder resin, and a solvent. Examples of insulating ceramic powders include Pal Serum (registered trademark), BT149 (manufactured by Nippon Chemical Industry Co., Ltd.), L5 (manufactured by Ferro Corp.), and SG-200 (manufactured by Nippon Talc Co., Ltd.). Two or more of these may be included. Examples of binder resins include acrylic resins, polyvinyl butyral resins, polyvinyl alcohol resins, cellulose resins, and methyl cellulose resins. Two or more of these may also be included.

作為絕緣性陶瓷組成物之溶劑,可理想地使用:前述的感光性導電糊之感光性有機成分(B)所包含之溶劑。As the solvent for the insulating ceramic composition, the solvent contained in the photosensitive organic component (B) of the aforementioned photosensitive conductive paste can be preferably used.

感光性絕緣性陶瓷組成物,係以除了包含前述絕緣性陶瓷粉末、溶劑以外,還包含鹼可溶性樹脂及光聚合起始劑為較佳。The photosensitive insulating ceramic composition preferably includes, in addition to the aforementioned insulating ceramic powder and solvent, an alkali-soluble resin and a photopolymerization initiator.

作為使用於感光性絕緣性陶瓷組成物之鹼可溶性樹脂及光聚合起始劑,可理想地使用:前述的感光性導電糊之感光性有機成分(B)所包含之鹼可溶性樹脂及光聚合起始劑。As the alkali-soluble resin and photopolymerization initiator used in the photosensitive insulating ceramic composition, the alkali-soluble resin and photopolymerization initiator contained in the photosensitive organic component (B) of the aforementioned photosensitive conductive paste can be preferably used.

作為將感光性導電糊塗布於絕緣性陶瓷層上而得到塗布膜之塗布步驟,可列舉:例示作為前述的硬化物的製造方法中的塗布方法之方法。As a coating step for obtaining a coating film by coating a photosensitive conductive paste on an insulating ceramic layer, the coating method in the aforementioned method for producing a cured product can be exemplified.

其次,將前述塗布膜乾燥而得到乾燥膜。Next, the coated film is dried to obtain a dry film.

作為乾燥步驟中的乾燥方法,可列舉:例示作為前述的硬化物的製造方法中的乾燥方法之方法。As the drying method in the drying step, the following can be cited as an example: the drying method in the aforementioned method for producing the cured product.

其次,將前述乾燥膜曝光及顯影而得到電路圖案。Next, the dried film is exposed and developed to obtain a circuit pattern.

作為曝光・顯影步驟中的曝光方法,可列舉:例示作為前述的硬化物的製造方法中的曝光方法之方法。As the exposure method in the exposure and development step, the method exemplified as the exposure method in the aforementioned method for producing a cured product can be cited.

藉由使用顯影液將曝光後的乾燥膜顯影並溶解而去除非曝光部,可形成所欲之圖案。作為顯影液,可列舉:例示作為前述的硬化物的製造方法中的顯影液者。The exposed dried film is developed and dissolved using a developer to remove the unexposed areas, thereby forming a desired pattern. Examples of the developer include the developer used in the aforementioned method for producing a cured product.

作為顯影方法,例如可列舉:一邊使絕緣性陶瓷層靜置或旋轉一邊將顯影液噴霧於曝光後的乾燥膜之方法、將具有曝光後的乾燥膜之絕緣性陶瓷層浸漬於顯影液中之方法、一邊將具有曝光後的乾燥膜之絕緣性陶瓷層浸漬於顯影液中一邊施加超音波之方法等。Examples of developing methods include a method of spraying a developer onto the exposed dried film while the insulating ceramic layer is stationary or rotating, a method of immersing the insulating ceramic layer having the exposed dried film in the developer, and a method of applying ultrasonic waves while immersing the insulating ceramic layer having the exposed dried film in the developer.

亦可對於藉由顯影所得之圖案藉由清洗液實施清洗處理。作為清洗液,可列舉:例示作為前述的硬化物的製造方法中的清洗液者。The pattern obtained by development may be cleaned with a cleaning liquid. Examples of the cleaning liquid include the cleaning liquid used in the aforementioned method for producing a cured product.

亦可將所得之附電路圖案之絕緣性陶瓷層積層而作成積層體。The obtained insulating ceramic with circuit patterns can also be stacked to form a laminate.

將所得之附電路圖案之絕緣性陶瓷層燒結而作成燒結體為較佳。作為燒結方法,可列舉:例示作為燒結體的製造方法中的燒結方法之方法。形成於絕緣性陶瓷層上之電路圖案,其包含導電性粉末(A)及感光性有機成分(B)之複合物,在燒結時藉由導電性粉末(A)彼此接觸而顯現導電性。The resulting insulating ceramic layer with the circuit pattern is preferably sintered to form a sintered body. Examples of sintering methods include those described as examples of sintering methods for manufacturing sintered bodies. The circuit pattern formed on the insulating ceramic layer comprises a composite of conductive powder (A) and a photosensitive organic component (B). During sintering, the conductive powder (A) comes into contact with each other, thereby exhibiting conductivity.

<電子零件的製造方法> 本發明之電子零件的製造方法之一具有:藉由本發明之附電路圖案之絕緣性陶瓷層的製造方法而得到多個附電路圖案之絕緣性陶瓷層之步驟、將前述多個附電路圖案之絕緣性陶瓷層進行積層及熱壓合而得到積層體之積層步驟、與將前述積層體燒結之燒結步驟。 <Method for Manufacturing Electronic Components> One method for manufacturing an electronic component of the present invention comprises: a step of obtaining a plurality of insulating ceramic layers with a circuit pattern using the method for manufacturing an insulating ceramic layer with a circuit pattern of the present invention; a step of laminating and hot-pressing the plurality of insulating ceramic layers with a circuit pattern to obtain a laminate; and a step of sintering the laminate.

首先,藉由本發明之附電路圖案之絕緣性陶瓷層的製造方法而得到多個附電路圖案之絕緣性陶瓷層。First, a plurality of insulating ceramic layers with circuit patterns are obtained by the method for manufacturing the insulating ceramic layer with circuit patterns of the present invention.

其次,將前述多個附電路圖案之絕緣性陶瓷層進行積層及熱壓合而得到積層體。作為積層方法,例如可列舉:使用導孔而將附電路圖案之絕緣性陶瓷層堆疊之方法等。作為熱壓合裝置,例如可列舉:油壓式加壓機等。熱壓合溫度係以90~130℃為較佳,熱壓合壓力係以5~20MPa為較佳。Next, the plurality of insulating ceramic layers with circuit patterns are stacked and heat-pressed to form a laminate. Examples of stacking methods include stacking the insulating ceramic layers with circuit patterns using vias. Examples of heat-pressing equipment include hydraulic presses. The heat-pressing temperature is preferably between 90 and 130°C, and the heat-pressing pressure is preferably between 5 and 20 MPa.

其次,將前述積層體燒結。作為燒結方法,可列舉:例示作為前述的燒結體的製造方法中的燒結方法之方法。Next, the laminate is sintered. Examples of sintering methods include the sintering method described above as an example of the sintering method used in the sintered body manufacturing method.

本發明之電子零件的製造方法之一具備:在藉由本發明之附電路圖案之絕緣性陶瓷層的製造方法所得之附電路圖案之絕緣性陶瓷層上依序重複多次以下的步驟A~步驟F而得到積層體之步驟、與將前述積層體燒結之步驟。 步驟A:將感光性絕緣性陶瓷組成物塗布而得到塗布膜之步驟 步驟B:將前述塗布膜乾燥而得到乾燥膜之步驟 步驟C:將前述乾燥膜曝光及顯影而得到絕緣性陶瓷層之步驟 步驟D:在前述絕緣性陶瓷層上,塗布本發明之感光性導電糊而得到塗布膜之步驟 步驟E:將前述塗布膜乾燥而得到乾燥膜之步驟 步驟F:將前述乾燥膜曝光及顯影而得到電路圖案之步驟。 One method of manufacturing an electronic component of the present invention comprises: a step of sequentially repeating the following steps A to F multiple times on an insulating ceramic layer with a circuit pattern obtained by the method of manufacturing an insulating ceramic layer with a circuit pattern of the present invention to obtain a laminate; and a step of sintering the laminate. Step A: Applying a photosensitive insulating ceramic composition to obtain a coating film Step B: Drying the coating film to obtain a dried film Step C: Exposing and developing the dried film to obtain an insulating ceramic layer Step D: Applying the photosensitive conductive paste of the present invention on the insulating ceramic layer to obtain a coating film Step E: Drying the coating film to obtain a dried film Step F: Exposing and developing the dried film to obtain a circuit pattern

首先,在步驟A中,在藉由本發明之附電路圖案之絕緣性陶瓷層的製造方法所得之附電路圖案之絕緣性陶瓷層上,塗布感光性絕緣性陶瓷組成物而得到塗布膜。作為感光性絕緣性陶瓷組成物,可使用:前述的附電路圖案之絕緣性陶瓷層的製造方法中的感光性絕緣性陶瓷組成物。作為塗布方法,可列舉:例示作為前述的硬化物的製造方法中的塗布方法之方法。First, in step A, a photosensitive insulating ceramic composition is applied to the insulating ceramic layer with a circuit pattern obtained by the method for producing an insulating ceramic layer with a circuit pattern of the present invention to form a coating film. The photosensitive insulating ceramic composition used in the aforementioned method for producing an insulating ceramic layer with a circuit pattern can be used. The coating method described above as an example of the coating method in the method for producing a cured product can be exemplified.

其次,在步驟B中,將所得之感光性絕緣性陶瓷組成物之塗布膜乾燥而得到乾燥膜。作為乾燥方法,可列舉:例示作為前述的硬化物的製造方法中的乾燥方法之方法。Next, in step B, the resulting coated film of the photosensitive insulating ceramic composition is dried to obtain a dried film. Examples of the drying method include the drying method described above as an example of the method for producing the cured product.

其次,在步驟C中,將所得之乾燥膜曝光及顯影而得到絕緣性陶瓷層。作為曝光方法,可列舉:例示作為前述的硬化物的製造方法中的曝光方法之方法。作為顯影方法,可列舉:例示作為前述的硬化物的製造方法中的顯影方法之方法。Next, in step C, the resulting dried film is exposed and developed to obtain an insulating ceramic layer. Examples of the exposure method include the exposure method described above as an example in the method for producing a cured product. Examples of the development method include the development method described above as an example in the method for producing a cured product.

其次,在步驟D中,在所得之絕緣性陶瓷層上,塗布本發明之感光性導電糊而得到塗布膜。Next, in step D, the photosensitive conductive paste of the present invention is applied onto the obtained insulating ceramic layer to obtain a coating film.

其次,在步驟E中,將所得之感光性導電糊之塗布膜乾燥而得到乾燥膜。Next, in step E, the obtained coated film of the photosensitive conductive paste is dried to obtain a dried film.

其次,在步驟F中,將所得之乾燥膜曝光及顯影而得到電路圖案。Next, in step F, the resulting dried film is exposed and developed to obtain a circuit pattern.

其次,依序重複多次上述的步驟A~步驟F而得到積層體。Next, the above steps A to F are repeated multiple times to obtain a layered volume.

其次,將所得之積層體燒結。作為燒結方法,可列舉:例示作為前述的燒結體的製造方法中的燒結方法之方法。Next, the obtained laminate is sintered. Examples of sintering methods include the sintering method described above as an example of the sintering method for producing a sintered body.

<附電路圖案之基板的製造方法> 本發明之附電路圖案之基板的製造方法,較佳為包含:將感光性絕緣性陶瓷組成物塗布於基材之步驟、將前述感光性絕緣性陶瓷組成物之塗膜曝光為所欲之圖案之步驟、將前述經曝光之感光性絕緣性陶瓷組成物之塗膜顯影而形成具有溝之絕緣層之步驟、將本發明之感光性導電糊塗布於前述絕緣層上及前述溝內之步驟、使前述感光性導電糊之塗膜對應於前述溝而曝光之步驟、以及將前述經曝光之感光性導電糊之塗膜顯影而在對應於前述溝之位置形成電路圖案之步驟;前述溝係在側面具有錐體形狀。 <Method for Manufacturing a Substrate with a Circuit Pattern> The method for manufacturing a substrate with a circuit pattern of the present invention preferably comprises: coating a photosensitive insulating ceramic composition on a substrate; exposing the coating of the photosensitive insulating ceramic composition to a desired pattern; and developing the exposed coating of the photosensitive insulating ceramic composition to form an insulating layer having grooves. , applying the photosensitive conductive paste of the present invention on the insulating layer and in the trench, exposing the photosensitive conductive paste film corresponding to the trench, and developing the exposed photosensitive conductive paste film to form a circuit pattern at a position corresponding to the trench; the trench has a pyramidal shape on its side.

藉由溝在側面具有錐體形狀,即使包含粒徑大的導電性粉末之糊亦可在將感光性導電糊塗布於溝內並填充時,易於釋出氣泡,得到接近設計所期待者的導電性。Because the trench has a pyramidal shape on the side, even a paste containing conductive powder with large particle size can easily release bubbles when the photosensitive conductive paste is applied to the trench and filled, achieving conductivity close to the design expectation.

作為具有錐體形狀之溝的頂部寬度(c)與底部寬度(d)之比值(d/c),係以0.30以上且小於1.00為較佳。藉由設為小於1.00,更佳為0.95以下,進一步較佳為0.90以下,可使感光性導電性糊之填充性提升。又,藉由設為0.3以上,更佳為0.5以上,進一步較佳為0.7以上,可增大電路圖案之剖面積。The ratio (d/c) of the top width (c) to the bottom width (d) of the pyramidal trench is preferably 0.30 or greater and less than 1.00. Setting it to less than 1.00, more preferably 0.95 or less, and even more preferably 0.90 or less, improves the fillability of the photosensitive conductive paste. Furthermore, setting it to 0.3 or greater, more preferably 0.5 or greater, and even more preferably 0.7 or greater, increases the cross-sectional area of the circuit pattern.

作為感光性導電糊之黏度,係以3~50Pa・s為較佳。藉由設為50Pa・s以下,更佳為40Pa・s以下,進一步較佳為30Pa・s以下,可易於填充至具有錐體形狀之溝。又,藉由設為3Pa・s以上,更佳為5Pa・s以上,進一步較佳為10Pa・s以上,可作成易於塗布者。The viscosity of the photosensitive conductive paste is preferably 3 to 50 Pa·s. By setting it to 50 Pa·s or less, more preferably 40 Pa·s or less, and even more preferably 30 Pa·s or less, it can be easily filled into pyramidal trenches. Furthermore, by setting it to 3 Pa·s or more, more preferably 5 Pa·s or more, and even more preferably 10 Pa·s or more, it can be easily applied.

感光性導電糊之黏度係使用布式黏度計,在10rpm之條件下測定。The viscosity of the photosensitive conductive paste was measured using a Brookfield viscometer at 10 rpm.

感光性導電糊之TI值(thixotropic index)係以2.0以下為較佳,1.5以下為更佳,1.3以下為進一步較佳。藉由這麼做,可作成均平性優異,填充至溝內之填充性亦優異者。The TI value (thixotropic index) of photosensitive conductive paste is preferably below 2.0, below 1.5 is more preferred, and below 1.3 is even more preferred. This allows for excellent leveling and filling into trenches.

感光性導電糊之TI值係定義為:使用布氏黏度計,在10rpm之條件下測定之值(e)與在30rpm之條件下測定之值(f)的比(e/f)。The TI value of a photosensitive conductive paste is defined as the ratio (e/f) of the value (e) measured at 10 rpm to the value (f) measured at 30 rpm using a Brookfield viscometer.

使將感光性導電糊塗布於絕緣層上及溝內之塗膜對應於溝而曝光。作為此時的曝光方法,例如可列舉:隔著光罩而曝光之接近式曝光、藉由雷射光而直接描繪圖案之方法等。The photosensitive conductive paste applied on the insulating layer and within the trench is exposed to light in alignment with the trench. Examples of exposure methods include proximity exposure through a photomask and direct patterning with laser light.

作為藉由接近式曝光而曝光時的曝光光罩之開口寬度,係以設為絕緣層之溝的寬度(頂部寬度c)以下為較佳。藉由這麼做,可形成長寬比更高的電路圖案。The opening width of the exposure mask during proximity exposure is preferably set to be equal to or less than the width of the trench in the insulating layer (top width c). This allows the formation of a circuit pattern with a higher aspect ratio.

本發明之附電路圖案之基板的製造方法適合電感器之製造。亦即,本發明之電感器的製造方法,其在步驟中包含本發明之附電路圖案之基板的製造方法。The method for manufacturing a substrate with a circuit pattern of the present invention is suitable for manufacturing an inductor. That is, the method for manufacturing an inductor of the present invention includes the steps of manufacturing a substrate with a circuit pattern of the present invention.

將本發明的製造方法所得之附電路圖案之基板切割為所欲之晶片尺寸,燒結,塗布端子電極,進行鍍敷處理,藉此可得到積層晶片電感器。作為切割裝置,例如可列舉:晶粒切割機、雷射切割機等。The circuit patterned substrate obtained by the manufacturing method of the present invention is cut into desired chip sizes, sintered, coated with terminal electrodes, and subjected to plating treatment to obtain a multilayer chip inductor. Examples of cutting equipment include die saws and laser saws.

藉由燒結,可使電路圖案之導電性顯現,作成導電圖案。作為端子電極之塗布方法,例如可列舉:濺鍍法等。作為使用於鍍敷處理之金屬,例如可列舉:鎳、錫等。 [實施例] Sintering can make the circuit pattern conductive, creating a conductive pattern. Examples of coating methods for terminal electrodes include sputtering. Examples of metals used in the plating process include nickel and tin. [Example]

以下列舉實施例及比較例,進一步詳細說明本發明。但本發明並非僅限定於在此所示之態樣。The present invention is further described in detail with the following embodiments and comparative examples. However, the present invention is not limited to the embodiments shown here.

[測定・評價方法] (1)中位直徑 使用粒度分布測定裝置(日機裝(股)製「Microtrac」HRA Model No.9320-X100),藉由雷射光散射法而測定。 [Measurement and Evaluation Method] (1) Median Diameter Measured by laser light scattering method using a particle size distribution measuring device ("Microtrac" HRA Model No. 9320-X100 manufactured by Nikkiso Co., Ltd.).

(2)高精細圖案加工性 (絕緣性陶瓷層之形成) 混合作為絕緣性陶瓷粉末之「Pal Serum」BT149(日本化學工業(股)製)100體積份、作為黏合劑樹脂之聚乙烯丁醛樹脂(SP值19.1(J/cm 3) 1/2)240體積份、作為塑化劑之鄰苯二甲酸二丁酯80體積份、作為溶媒之乙二醇單丁醚160體積份,藉由刮刀法而塗布於氧化鋁基板(100mm×100mm×厚度0.5mm)上,形成絕緣性陶瓷層。 (2) High-precision pattern processing (formation of insulating ceramic layer) 100 parts by volume of "Pal Serum" BT149 (manufactured by Nippon Chemical Industry Co., Ltd.) as insulating ceramic powder, 240 parts by volume of polyvinyl butyral resin (SP value 19.1 (J/ cm3 ) 1/2 ) as binder resin, 80 parts by volume of dibutyl phthalate as plasticizer, and 160 parts by volume of ethylene glycol monobutyl ether as solvent were mixed and coated on an alumina substrate (100 mm × 100 mm × thickness 0.5 mm) by a doctor blade method to form an insulating ceramic layer.

(塗布膜之形成) 在前述絕緣性陶瓷層上,以乾燥後膜厚成為10μm的方式利用絲網印刷法塗布實施例・比較例所得之感光性導電糊,而得到塗布膜。 (Coating Film Formation) The photosensitive conductive paste obtained in Examples and Comparative Examples was applied to the insulating ceramic layer using screen printing to a film thickness of 10 μm after drying, forming a coating film.

(乾燥膜之形成) 將所得之塗布膜使用80℃的熱風乾燥機而乾燥10分鐘,於絕緣性陶瓷層上形成乾燥膜。重複同樣的操作,針對各實施例・比較例分別準備4片形成乾燥膜及絕緣性陶瓷層之基板。 (Dry Film Formation) The resulting coated film was dried in a hot air dryer at 80°C for 10 minutes to form a dry film on the insulating ceramic layer. This process was repeated to prepare four substrates each with dry films and insulating ceramic layers for each of the Examples and Comparative Examples.

(圖案形成) 在前述乾燥膜上,隔著線圈狀圖案的線寬/線間之間隔(以下稱為「L/S」)分別為20μm/20μm、18μm/18μm、15μm/15μm、12μm/12μm的4種曝光光罩,皆藉由21mW/cm 2的輸出之超高壓汞燈,而進行照射量400mJ/cm 2(波長365nm換算)的曝光。 (Pattern Formation) Four exposure masks with line widths/line spacings (hereinafter referred to as "L/S") of 20μm/20μm, 18μm/18μm, 15μm/15μm, and 12μm/12μm, respectively, were used on the aforementioned dry film. Exposure was performed at an irradiation dose of 400mJ/ cm² (at a wavelength of 365nm) using an ultra-high-pressure mercury lamp with an output of 21mW/ cm² .

此後,將0.1質量%碳酸鈉水溶液作為顯影液,進行淋浴顯影直至非曝光部全部溶解的時間(以下稱為「全溶解時間」)為止,而製造L/S不同的4種圖案形成薄片。Thereafter, shower development was performed using a 0.1 mass % sodium carbonate aqueous solution as a developer until the non-exposed portion was completely dissolved (hereinafter referred to as the "total dissolution time"), thereby producing four types of patterned sheets with different L/S ratios.

分別使用光學顯微鏡而以倍率10倍來放大觀察前述4種圖案形成薄片,從有無圖案之剝離或者短路,藉由下述的基準而進行評價。將D以上設為合格。 A:在上述4種全部的尺寸的圖案中,未確認到剝離及短路。 B:在15μm/15μm以上的圖案中未確認到剝離及短路,在12μm/12μm以下的圖案中確認到剝離或短路。 C:在18μm/18μm以上的圖案中未確認到剝離及短路,在15μm/15μm以下的圖案中確認到剝離或短路。 D:在20μm/20μm以上的圖案中未確認到剝離及短路,在18μm/18μm以下的圖案中確認到剝離或短路。 E:在上述4種全部的尺寸的圖案中,確認到剝離或短路。 Each of the four patterned sheets was observed under an optical microscope at 10x magnification and evaluated based on the following criteria for pattern peeling or shorting. A score of D or higher was considered acceptable. A: No peeling or shorting was observed in all four pattern sizes. B: No peeling or shorting was observed in patterns larger than 15μm/15μm, but peeling or shorting was observed in patterns smaller than 12μm/12μm. C: No peeling or shorting was observed in patterns larger than 18μm/18μm, but peeling or shorting was observed in patterns smaller than 15μm/15μm. D: No peeling or shorting was observed in patterns larger than 20μm/20μm, but peeling or shorting was observed in patterns smaller than 18μm/18μm. E: Peeling or shorting was observed in all four sizes.

(3)體積電阻率 在氧化鋁基板(100mm×100mm×厚度0.5mm)上,以乾燥後的膜厚成為10μm的方式利用絲網印刷法塗布各實施例・比較例所得之感光性導電糊。將所得之塗布膜以80℃的熱風乾燥機乾燥10分鐘,得到乾燥膜。 (3) Volume Resistivity The photosensitive conductive paste obtained in each Example and Comparative Example was applied to an alumina substrate (100 mm × 100 mm × 0.5 mm thick) by screen printing to a film thickness of 10 μm after drying. The resulting coated film was dried in a hot air dryer at 80°C for 10 minutes to obtain a dried film.

除了使用規定圖案(長度5cm×線寬1mm,兩端附有1cm平方的墊子之圖案)的曝光光罩以外,與前述的「高精細圖案加工性」同樣地進行曝光・顯影,得到電阻測定用圖案形成薄片。Except for using an exposure mask with a specified pattern (5cm long x 1mm line width, with 1cm square pads at both ends), exposure and development were performed in the same manner as described for the "High-precision Patterning Processability" method to obtain a patterned sheet for resistance measurement.

將所得之電阻測定用圖案形成薄片在880℃下熱處理10分鐘而燒結,得到電阻測定用圖案形成燒結體。The obtained resistance measurement pattern-formed sheet was heat-treated at 880°C for 10 minutes and sintered to obtain a resistance measurement pattern-formed sintered body.

針對所得之電阻測定用圖案形成燒結體,使用光學顯微鏡而以倍率1000倍放大觀察,測定燒結體之線寬,使用觸針式階規(「SURFCOM」(註冊商標)1400;東京精密(股)製)而測定燒結體之膜厚。又,使用數位萬用電表(CDM-16D;CUSTOM公司製),測定上述電阻測定用圖案燒結體之電阻值,從下式算出體積電阻率。 體積電阻率(μΩ・cm)=實電阻值(Ω)×10 6×圖案線寬(cm)×圖案厚度(cm)÷圖案長度(cm) … (式)。 The resulting sintered body formed with a resistance measurement pattern was observed under an optical microscope at 1000x magnification to measure the line width of the sintered body. The film thickness of the sintered body was measured using a probe gauge ("SURFCOM" (registered trademark) 1400; manufactured by Tokyo Seimitsu Co., Ltd.). Furthermore, the resistance of the sintered body with the resistance measurement pattern was measured using a digital multimeter (CDM-16D; manufactured by CUSTOM Co., Ltd.). The volume resistivity was calculated using the following formula: Volume resistivity (μΩ·cm) = Actual resistance (Ω) × 10 6 × Pattern line width (cm) × Pattern thickness (cm) ÷ Pattern length (cm) (formula).

藉由下述的基準而評價,將C以上設為合格。 A:體積電阻率小於2.2μΩ・cm。 B:體積電阻率為2.2μΩ・cm以上且小於2.5μΩ・cm。 C:體積電阻率為2.5μΩ・cm以上且小於3.0μΩ・cm。 D:體積電阻率為3.0μΩ・cm以上。 Evaluation was conducted based on the following criteria, with a score of C or higher considered acceptable. A: Volume resistivity less than 2.2 μΩ·cm. B: Volume resistivity of 2.2 μΩ·cm or higher and less than 2.5 μΩ·cm. C: Volume resistivity of 2.5 μΩ·cm or higher and less than 3.0 μΩ·cm. D: Volume resistivity of 3.0 μΩ·cm or higher.

(4)燒結收縮率 在氧化鋁基板(100mm×100mm×厚度0.5mm)上,以乾燥後的膜厚成為10μm的方式利用絲網印刷法塗布各實施例・比較例所得之感光性導電糊。將所得之塗布膜以80℃的熱風乾燥機乾燥10分鐘,得到乾燥膜。 (4) Sintering Shrinkage The photosensitive conductive paste obtained in each Example and Comparative Example was applied to an alumina substrate (100 mm × 100 mm × 0.5 mm thick) by screen printing to a film thickness of 10 μm after drying. The resulting coated film was dried in a hot air dryer at 80°C for 10 minutes to obtain a dried film.

使用線圈狀圖案之L/S為20μm/20μm的光罩而與前述的「高精細圖案加工性」同樣進行曝光・顯影,得到收縮率測定用圖案形成薄片。Using a mask with a coil pattern L/S of 20μm/20μm, exposure and development were performed in the same manner as in the "High-definition Pattern Processability" section above to obtain a patterned sheet for shrinkage measurement.

針對所得之收縮率測定用圖案形成薄片,使用光學顯微鏡而以倍率1000倍放大觀察,測定燒結前圖案線寬。又,使用觸針式階規(「SURFCOM」(註冊商標)1400;東京精密(股)製)而測定燒結前圖案膜厚。The resulting shrinkage measurement patterned sheet was observed under an optical microscope at 1000x magnification to measure the line width of the pattern before sintering. Furthermore, the film thickness of the pattern before sintering was measured using a stylus gauge ("SURFCOM" (registered trademark) 1400; manufactured by Tokyo Seimitsu Co., Ltd.).

此後,將收縮率測定用圖案形成薄片在880℃下熱處理10分鐘而燒結,得到收縮率測定用圖案形成燒結體。Thereafter, the sheet having the pattern formed thereon for measuring shrinkage was sintered by heat treatment at 880°C for 10 minutes to obtain a sintered body having the pattern formed thereon for measuring shrinkage.

針對所得之收縮率測定用圖案形成燒結體,使用光學顯微鏡而以倍率1000倍放大觀察,測定燒結後圖案線寬。又,使用觸針式階規(「SURFCOM」(註冊商標)1400;東京精密(股)製)而測定燒結後圖案膜厚。從下式算出燒結收縮率。 線寬變化率(%)=[燒結後圖案線寬(μm)/燒結前圖案線寬(μm)]×100 膜厚變化率(%)=[燒結後圖案膜厚(μm)/燒結前圖案膜厚(μm)]×100 燒結收縮率(%)=100-(線寬變化率(%)×膜厚變化率(%))/100。 The resulting sintered product, formed using a pattern for shrinkage measurement, was observed under an optical microscope at 1000x magnification to measure the line width of the pattern after sintering. Furthermore, the film thickness of the pattern after sintering was measured using a stylus gauge ("SURFCOM" (registered trademark) 1400; manufactured by Tokyo Seimitsu Co., Ltd.). The sintering shrinkage was calculated using the following formula. Line width variation (%) = [Line width after sintering (μm) / Line width before sintering (μm)] × 100 Film thickness variation (%) = [Film thickness after sintering (μm) / Film thickness before sintering (μm)] × 100 Sintering shrinkage (%) = 100 - (Line width variation (%) × Film thickness variation (%)) / 100.

藉由下述的基準而評價,將D以上設為合格。 A:燒結收縮率小於55.0%。 B:燒結收縮率為55.0%以上且小於58.0%。 C:燒結收縮率為58.0%以上且小於60.0%。 D:燒結收縮率為60.0%以上且小於63.0%。 E:燒結收縮率為63.0%以上。 Evaluation was based on the following criteria, with a score of D or higher considered acceptable. A: Sintering shrinkage less than 55.0%. B: Sintering shrinkage of 55.0% or more and less than 58.0%. C: Sintering shrinkage of 58.0% or more and less than 60.0%. D: Sintering shrinkage of 60.0% or more and less than 63.0%. E: Sintering shrinkage of 63.0% or more.

(5)電路圖案剖面之觀察評價 將實施例16~20、比較例5、6所得之附電路圖案之基板的剖面朝電路圖案之線寬方向裁切。使用掃描型電子顯微鏡(S2400;日立製作所(股)製)而以倍率3000倍放大觀察剖面,觀察絕緣層之層厚度、溝之頂部寬度c、底部寬度d、電路圖案與絕緣層之間的空隙。觀察10處不同處的溝之剖面,將可見到5μm以上的空隙之10處中的剖面之數量以分數評價,將3處以下設為合格。空隙之尺寸,係藉由測定空隙之最長部(一個空隙中,最遠離的2點之端部間的距離)而算出。 (5) Observation and Evaluation of Circuit Pattern Cross-Sections The cross-sections of the circuit patterned substrates obtained in Examples 16 to 20 and Comparative Examples 5 and 6 were cut in the direction of the line width of the circuit pattern. The cross-sections were observed at a magnification of 3000 times using a scanning electron microscope (S2400; manufactured by Hitachi, Ltd.). The thickness of the insulating layer, the top width c and bottom width d of the trench, and the gap between the circuit pattern and the insulating layer were observed. The cross-sections of the trenches at 10 different locations were observed, and the number of cross-sections with gaps of 5 μm or more was evaluated as a score. Three or fewer cross-sections were considered acceptable. The size of the gap is calculated by measuring the longest part of the gap (the distance between the two ends of the gap that are farthest apart).

(6)導電圖案之長寬比及電阻值之評價 除了將絕緣層之溝及電路圖案之長度設為40mm以外,利用與實施例16~20、比較例5、6同樣的方法製作基板。將所得之附電路圖案之基板在880℃下熱處理10分鐘而燒結,得到導電圖案。使用數位萬用電表(CDM-16D;CUSTOM公司製),測定導電圖案之電阻值。其次,將導電圖案朝線寬方向裁切。使用掃描型電子顯微鏡(S2400;日立製作所(股)製),以倍率3000倍放大觀察該剖面,測定導電圖案之線寬、高度。線寬係設為導電圖案之剖面的最大寬度。從所得之結果算出薄片電阻值、導電圖案之長寬比。薄片電阻值係利用下式算出。 薄片電阻值(mΩ)=導電圖案電阻值(mΩ)×線寬(mm)÷導電圖案長度(mm) 將小於3.5mΩ設為合格。 (6) Evaluation of the aspect ratio and resistance value of the conductive pattern A substrate was prepared using the same method as in Examples 16 to 20 and Comparative Examples 5 and 6, except that the length of the trenches in the insulating layer and the circuit pattern was set to 40 mm. The resulting substrate with the circuit pattern was sintered by heat treatment at 880°C for 10 minutes to obtain a conductive pattern. The resistance value of the conductive pattern was measured using a digital multimeter (CDM-16D; manufactured by CUSTOM). Next, the conductive pattern was cut in the direction of line width. The cross section was observed at a magnification of 3000 times using a scanning electron microscope (S2400; manufactured by Hitachi, Ltd.), and the line width and height of the conductive pattern were measured. The line width was set as the maximum width of the cross section of the conductive pattern. From the results, calculate the sheet resistance and the conductive pattern aspect ratio. Sheet resistance is calculated using the following formula: Sheet resistance (mΩ) = Conductive pattern resistance (mΩ) × Line width (mm) ÷ Conductive pattern length (mm) A value less than 3.5 mΩ is considered acceptable.

(感光性導電糊) 使用於感光性導電糊之原料係如下。 (Photosensitive Conductive Paste) The raw materials used in photosensitive conductive paste are as follows.

導電性粒子(A) A-1:中位直徑r為3.2μm,密度為10.5g/cm 3的Ag粉末 A-2:r為4.5μm,密度為10.5g/cm 3的Ag粉末 A-3:r為5.2μm,密度為10.5g/cm 3的Ag粉末 A-4:r為5.8μm,密度為10.5g/cm 3的Ag粉末 A-5:r為2.8μm,密度為10.5g/cm 3的Ag粉末 A-6:r為6.5μm,密度為10.5g/cm 3的Ag粉末。 Conductive Particles (A) A-1: Ag powder with a median diameter r of 3.2 μm and a density of 10.5 g/cm 3. A-2: Ag powder with an r of 4.5 μm and a density of 10.5 g/cm 3. A-3: Ag powder with an r of 5.2 μm and a density of 10.5 g/cm 3. A-4: Ag powder with an r of 5.8 μm and a density of 10.5 g/cm 3. A-5: Ag powder with an r of 2.8 μm and a density of 10.5 g/cm 3. A-6: Ag powder with an r of 6.5 μm and a density of 10.5 g/cm 3 .

鹼可溶性樹脂:使40莫耳份的環氧丙基甲基丙烯酸酯,對於甲基丙烯酸/甲基丙烯酸甲酯/苯乙烯之莫耳比為54/23/23的共聚物之羧基100莫耳份進行加成反應而成之丙烯酸樹脂(重量平均分子量30,000、玻璃轉移點110℃、酸價100mgKOH/g、密度1.0g/cm 3)。 Alkali-soluble resin: Acrylic resin (weight-average molecular weight 30,000, glass transition point 110°C, acid value 100 mgKOH/g, density 1.0 g/cm 3 ) prepared by the addition reaction of 40 mol parts of epoxypropyl methacrylate to 100 mol parts of the carboxyl groups of a copolymer of methacrylic acid/methyl methacrylate/styrene (molar ratio 54/23/23).

感光性單體:含有酯結構之胺基甲酸酯丙烯酸酯(新中村化學工業(股)製「NK OLIGO」UA-122P、黏度7.0Pa・s、重量平均分子量1,100、密度1.0g/cm 3)。 Photosensitive monomer: Urethane acrylate containing an ester structure ("NK OLIGO" UA-122P manufactured by Shin-Nakamura Chemical Industry Co., Ltd., viscosity 7.0 Pa·s, weight-average molecular weight 1,100, density 1.0 g/cm 3 ).

光聚合起始劑:肟系光聚合起始劑(ADEKA(股)製「ADEKA OPTOMER」N-1919、密度1.3g/cm 3)。 Photopolymerization initiator: oxime-based photopolymerization initiator ("ADEKA OPTOMER" N-1919 manufactured by ADEKA Co., Ltd., density 1.3 g/cm 3 ).

均平劑:「DISPARLON」(註冊商標)L-1980N(密度1.0g/cm 3;楠本化成(股)製)。 Leveling agent: "DISPARLON" (registered trademark) L-1980N (density 1.0 g/cm 3 ; manufactured by Kusumoto Chemicals Co., Ltd.).

分散劑:「FLOWLEN」G-700(密度1.1g/cm 3;共榮社化學(股)製)。 Dispersant: "FLOWLEN" G-700 (density 1.1 g/cm 3 ; manufactured by Kyoeisha Chemical Co., Ltd.).

溶劑:「CELTOL」CHXA(環己醇乙酸酯、密度1.0g/cm 3;Daicel(股)製)。 Solvent: CELTOL CHXA (cyclohexanol acetate, density 1.0 g/cm 3 ; manufactured by Daicel Co., Ltd.).

無機粒子(C) C-1:氧化矽(Nippon Aerosil(股)製「AEROSIL」R972、中位直徑12nm、密度2.2g/cm 3) C-2:氧化鋁(Nippon Aerosil(股)製「AEROXIDE」AluC、中位直徑13nm、密度3.3g/cm 3)。 Inorganic particles (C) C-1: Silicon oxide ("AEROSIL" R972 manufactured by Nippon Aerosil Co., Ltd., median diameter 12 nm, density 2.2 g/cm 3 ) C-2: Aluminum oxide ("AEROXIDE" AluC manufactured by Nippon Aerosil Co., Ltd., median diameter 13 nm, density 3.3 g/cm 3 ).

[實施例1] 混合5.0g的鹼可溶性樹脂、2.4g的NK OLIGOUA-122P、0.5g的ADEKA OPTOMERN-1919、0.1g的「DISPARLON」L-1980N、0.1g的FLOWLENG-700及11.9g的「CELTOL」CHXA,得到20.0g的感光性有機成分B-1(比重1.0g/cm 3)。將其組成示於表1。 [Example 1] 5.0 g of alkali-soluble resin, 2.4 g of NK OLIGOUA-122P, 0.5 g of ADEKA OPTOMERN-1919, 0.1 g of DISPARLON L-1980N, 0.1 g of FLOWLENG-700, and 11.9 g of CELTOL CHXA were mixed to obtain 20.0 g of photosensitive organic component B-1 (specific gravity 1.0 g/cm 3 ). The composition is shown in Table 1.

混合所得之20.0g的感光性有機成分(B-1)與51.8g的Ag粉末(A-3)及0.5g的無機粒子(C-1),使用三輥機而混練,得到表2所記載之感光性導電糊P-1。將評價結果示於表2。20.0 g of the resulting photosensitive organic component (B-1) was mixed with 51.8 g of Ag powder (A-3) and 0.5 g of inorganic particles (C-1) and kneaded using a three-roll mill to obtain the photosensitive conductive paste P-1 shown in Table 2. The evaluation results are shown in Table 2.

[實施例2~15、比較例1~4] 藉由與實施例1同樣的方法而製作表2~4所示之組成的感光性導電糊P-2~P-19。 [Examples 2-15, Comparative Examples 1-4] Photosensitive conductive pastes P-2 to P-19 having the compositions shown in Tables 2-4 were prepared using the same method as in Example 1.

關於高精細圖案加工性之評價: 實施例4係僅在12μm/12μm的圖案中確認到剝離。 實施例5係僅在15μm/15μm以下的圖案中確認到剝離。 實施例6係僅在12μm/12μm的圖案中確認到短路。 實施例7係僅在15μm/15μm以下的圖案中確認到短路。 實施例8係僅在15μm/15μm以下的圖案中確認到剝離。 實施例13係僅在15μm/15μm以下的圖案中確認到剝離。 實施例14係僅在15μm/15μm以下的圖案中確認到剝離。 實施例15係僅在18μm/18μm以下的圖案中確認到剝離。 比較例2係在4種全部的尺寸的圖案中確認到剝離。 比較例3係僅在18μm/18μm以下的圖案中確認到剝離。 比較例4係在4種全部的尺寸的圖案中確認到短路。 Evaluation of high-definition pattern processability: Example 4 exhibited peeling only in patterns with a size of 12μm/12μm. Example 5 exhibited peeling only in patterns with a size of 15μm/15μm or less. Example 6 exhibited shorting only in patterns with a size of 12μm/12μm or less. Example 7 exhibited shorting only in patterns with a size of 15μm/15μm or less. Example 8 exhibited peeling only in patterns with a size of 15μm/15μm or less. Example 13 exhibited peeling only in patterns with a size of 15μm/15μm or less. In Example 14, peeling was observed only in patterns smaller than 15μm/15μm. In Example 15, peeling was observed only in patterns smaller than 18μm/18μm. In Comparative Example 2, peeling was observed in all four pattern sizes. In Comparative Example 3, peeling was observed only in patterns smaller than 18μm/18μm. In Comparative Example 4, short circuiting was observed in all four pattern sizes.

將評價結果示於表2~4。The evaluation results are shown in Tables 2 to 4.

[實施例16~20、比較例5、6] [Examples 16-20, Comparative Examples 5 and 6] (基材) (Base material)

使用氧化鋁板作為基材。 Alumina plate is used as the base material.

(感光性絕緣性組成物) (Photosensitive insulating composition)

秤量絕緣性陶瓷粉末(Ferro corp.製L5)55質量份、作為鹼可溶性樹脂之使40莫耳份的環氧丙基甲基丙烯酸酯對於甲基丙烯酸/甲基丙烯酸甲酯/苯乙烯之莫耳比為54/23/23的共聚物之羧基100莫耳份進行加成反應而成之丙烯酸樹脂(重量平均分子量30,000、玻璃轉移點110℃、酸價100mgKOH/g)20質量份、光聚合起始劑(ADEKA(股)製「ADEKA OPTOMER」N-1919)7.0質量份、均平劑(楠本化成(股)製「DISPARLON」L-1980N)1.0質量份、分散劑(共榮社化學(股)製「FLOWLEN」G-700)1.0質量份、作為塑化劑之鄰苯二甲酸二丁酯4.0質量份、溶劑(Daicel(股)製「CELTOL」CHXA)12.0質量份後,混合,以三輥機混練而得到感光性絕緣性組成物I-1。 55 parts by mass of insulating ceramic powder (L5 manufactured by Ferro Corp.), 20 parts by mass of an acrylic resin (weight average molecular weight 30,000, glass transition point 110°C, acid value 100 mgKOH/g) prepared by addition reaction of 40 parts by mass of epoxypropyl methacrylate to 100 parts by mass of the carboxyl groups of a copolymer of methacrylic acid/methyl methacrylate/styrene in a molar ratio of 54/23/23) as an alkali-soluble resin, and 20 parts by mass of a photopolymerization initiator ("ADEKA 7.0 parts by mass of OPTOMER ("N-1919" manufactured by Kusumoto Chemicals), 1.0 part by mass of a leveling agent ("DISPARLON" L-1980N manufactured by Kusumoto Chemicals), 1.0 part by mass of a dispersant ("FLOWLEN" G-700 manufactured by Kyoeisha Chemicals), 4.0 parts by mass of dibutyl phthalate as a plasticizer, and 12.0 parts by mass of a solvent ("CELTOL" CHXA manufactured by Daicel Co., Ltd.) were mixed and kneaded using a three-roll mill to obtain a photosensitive insulating composition I-1.

(感光性導電糊) (Photosensitive conductive paste)

使用感光性導電糊P-3。 Use photosensitive conductive paste P-3.

(電路圖案付基板) (Circuit pattern attached to substrate)

以成為表5所示之絕緣層之層厚度的方式,將感光性絕緣性組成物I-1塗布於基材上,進行乾燥。 The photosensitive insulating composition I-1 was applied to the substrate to obtain the insulating layer thickness shown in Table 5 and dried.

其次,依表5所示之間隙將曝光光罩設置於感光性絕緣性組成物之塗膜的上方,以表5所示之曝光量使用曝光裝置進行全線曝光。Next, an exposure mask was placed above the coating of the photosensitive insulating composition at the intervals shown in Table 5, and full-line exposure was performed using an exposure device at the exposure dose shown in Table 5.

其次,於0.2質量%的Na 2CO 3溶液中,使基板浸漬表5所示之時間,而藉此進行顯影。 Next, the substrate was immersed in a 0.2 mass% Na 2 CO 3 solution for the time shown in Table 5, thereby performing development.

其次,藉由超純水實施清洗處理。Next, the cleaning process is carried out using ultrapure water.

其次,在具有溝之絕緣層上,以成為表5所示之塗膜之最大厚度(從有感光性導電糊滲入之絕緣層之溝的底部至感光性導電糊之塗膜的表面為止之距離。即,幾乎對應於電路圖案之高度。)的方式,塗布感光性導電糊,進行乾燥。Next, a photosensitive conductive paste was applied to the insulating layer with the trenches to achieve the maximum coating thickness shown in Table 5 (the distance from the bottom of the trench in the insulating layer, where the photosensitive conductive paste had penetrated, to the surface of the photosensitive conductive paste coating, which roughly corresponds to the height of the circuit pattern). The coating was then dried.

其次,將具有表5所示之開口寬度的光罩配置於感光性導電性組成物之塗膜的上方,使用曝光裝置而以曝光量400mJ/cm 2(波長365nm換算)曝光對應於絕緣層之溝的部位。 Next, a photomask having an opening width shown in Table 5 was placed above the coating of the photosensitive conductive composition, and the portion corresponding to the trench of the insulating layer was exposed using an exposure device at an exposure dose of 400 mJ/cm 2 (at a wavelength of 365 nm).

其次,於0.2質量%的Na 2CO 3溶液中,使基板浸漬30秒,而藉此進行顯影。 Next, the substrate was immersed in a 0.2 mass% Na 2 CO 3 solution for 30 seconds to perform development.

其次,藉由超純水實施清洗處理,得到附電路圖案之基板。Next, the substrate is cleaned with ultrapure water to obtain a substrate with a circuit pattern.

[表1] [表1] 感光性有機成分B-1 體積% 質量% 組成 鹼可溶性樹脂 25.0 24.8 感光性單體 12.0 11.9 光聚合起始劑 2.0 2.6 均平劑 0.5 0.5 分散劑 0.5 0.6 溶劑 60.0 59.6 [Table 1] [Table 1] Photosensitive organic ingredient B-1 Volume% Mass% Composition Alkaline soluble resin 25.0 24.8 Photosensitive monomer 12.0 11.9 Photopolymerization initiator 2.0 2.6 Equalizer 0.5 0.5 dispersants 0.5 0.6 solvent 60.0 59.6

[表2] [表2] 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 實施例8 感光性導電糊 P-1 P-2 P-3 P-4 P-5 P-6 P-7 P-8 導電性粒子(A) A-2 A-2 A-2 A-2 A-1 A-3 A-4 A-1 感光性有機成分(B) B-1 B-1 B-1 B-1 B-1 B-1 B-1 B-1 無機粒子(C) C-1 C-1 C-1 C-1 C-1 C-1 C-1 C-1 糊 組成比 [質量%] 導電性粒子(A) 71.5 74.1 76.9 81.6 76.8 76.9 76.9 76.9 無機粒子(C) 0.7 0.7 0.7 0.8 0.5 0.8 0.9 0.7 感光性有機 成分(B) 固體成分(溶劑以外) 11.2 10.2 9.1 7.1 9.1 9.0 9.0 9.1 溶劑 16.6 15.0 13.4 10.5 13.5 13.3 13.2 13.4 糊 組成比 [體積%] 導電性粉末(A) 19.6 21.8 24.5 30.3 24.3 24.5 24.6 24.5 無機粒子(C) 0.9 1.0 1.1 1.4 0.8 1.3 1.4 1.1 感光性有機 成分(B) 固體成分(溶劑以外) 31.8 30.9 29.8 27.3 30.0 29.7 29.6 29.8 溶劑 47.7 46.3 44.7 41.0 44.9 44.5 44.4 44.7 導電性粒子(A)之 中位直徑 r [μm] 4.5 4.5 4.5 4.5 3.2 5.2 5.8 3.2 導電性粒子(A)之全固體成分中的 體積分率 V 1[體積%] 37.5 40.6 44.2 51.4 44.2 44.2 44.2 44.2 無機粒子(B)之相對於導電性粒子(A) 100體積%的體積比率 V 2[體積%] 4.3 4.3 4.3 4.3 4.3 4.3 4.3 2.7 r×V 1×V 2 726 786 855 995 608 988 1102 382 評價 結果 高精細圖案 加工性 A A A B C B C C 體積電阻率[μΩ・cm] A(2.1) A(2.0) A(2.0) A(2.0) A(2.0) B(2.3) B(2.4) A(2.0) 燒結收縮率[%] B(57.8) B(56.5) A(54.8) A(46.9) C(58.3) A(53.8) A(52.5) D(60.1) [Table 2] [Table 2] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Photosensitive conductive paste P-1 P-2 P-3 P-4 P-5 P-6 P-7 P-8 Conductive particles (A) A-2 A-2 A-2 A-2 A-1 A-3 A-4 A-1 Photosensitive organic ingredient (B) B-1 B-1 B-1 B-1 B-1 B-1 B-1 B-1 Inorganic particles (C) C-1 C-1 C-1 C-1 C-1 C-1 C-1 C-1 Paste composition ratio [mass %] Conductive particles (A) 71.5 74.1 76.9 81.6 76.8 76.9 76.9 76.9 Inorganic particles (C) 0.7 0.7 0.7 0.8 0.5 0.8 0.9 0.7 Photosensitive organic ingredient (B) Solid ingredients (excluding solvent) 11.2 10.2 9.1 7.1 9.1 9.0 9.0 9.1 solvent 16.6 15.0 13.4 10.5 13.5 13.3 13.2 13.4 Paste composition ratio [volume %] Conductive powder(A) 19.6 21.8 24.5 30.3 24.3 24.5 24.6 24.5 Inorganic particles (C) 0.9 1.0 1.1 1.4 0.8 1.3 1.4 1.1 Photosensitive organic ingredient (B) Solid ingredients (excluding solvent) 31.8 30.9 29.8 27.3 30.0 29.7 29.6 29.8 solvent 47.7 46.3 44.7 41.0 44.9 44.5 44.4 44.7 Median diameter r of conductive particles (A) [μm] 4.5 4.5 4.5 4.5 3.2 5.2 5.8 3.2 Volume fraction of conductive particles (A) in the total solid content V 1 [volume %] 37.5 40.6 44.2 51.4 44.2 44.2 44.2 44.2 Volume ratio of inorganic particles (B) to 100 volume % of conductive particles (A) V 2 [volume %] 4.3 4.3 4.3 4.3 4.3 4.3 4.3 2.7 r×V 1 ×V 2 726 786 855 995 608 988 1102 382 Evaluation results High-precision pattern processing A A A B C B C C Volume resistivity [μΩ・cm] A(2.1) A(2.0) A(2.0) A(2.0) A(2.0) B(2.3) B(2.4) A(2.0) Sintering shrinkage [%] B(57.8) B(56.5) A(54.8) A(46.9) C(58.3) A(53.8) A(52.5) D(60.1)

[表3] [表3] 實施例9 實施例10 實施例11 實施例12 實施例13 實施例14 實施例15 感光性導電糊 P-9 P-10 P-11 P-12 P-13 P-14 P-15 導電性粒子(A) A-2 A-2 A-2 A-2 A-1 A-1 A-1 感光性有機成分(B) B-1 B-1 B-1 B-1 B-1 B-1 B-1 無機粒子(C) C-1 C-1 C-1 C-1 C-1 C-1 C-2 糊 組成比 [質量%] 導電性粒子(A) 76.9 76.9 76.9 76.9 76.9 71.5 71.3 無機粒子(C) 0.7 0.7 0.7 0.7 0.7 0.5 0.7 感光性有機 成分(B) 固體成分(溶劑以外) 9.1 9.1 9.1 9.1 9.1 11.3 11.3 溶劑 13.4 13.4 13.4 13.4 13.4 16.7 16.7 糊 組成比 [體積%] 導電性粒子(A) 24.5 24.5 24.5 24.5 24.5 19.5 19.5 無機粒子(C) 1.1 1.1 1.1 1.1 1.1 0.6 0.6 感光性有機 成分(B) 固體成分(溶劑以外) 29.8 29.8 29.8 29.8 29.8 31.9 31.9 溶劑 44.7 44.7 44.7 44.7 44.7 47.9 47.9 導電性粒子(A)之 中位直徑 r [μm] 4.5 4.5 4.5 4.5 3.2 3.2 3.2 導電性粒子(A)之全固體成分中的 體積分率 V 1[體積%] 44.2 44.2 44.2 44.2 44.2 37.5 37.5 無機粒子(B)之相對於導電性粒子(A) 100體積%的體積比率 V 2[體積%] 3.1 3.6 6.0 8.5 11 2.7 2.7 r×V 1×V 2 617 716 1193 1691 1556 324 324 評價 結果 高精細圖案 加工性 A A A A C C D 體積電阻率[μΩ・cm] A(2.0) A(2.0) B(2.3) B(2.4) C(2.9) B(2.2) B(2.2) 燒結收縮率[%] B(56.4) B(55.3) A(54.0) A(53.2) A(52.7) D(62.8) D(62.9) [Table 3] [Table 3] Example 9 Example 10 Example 11 Example 12 Example 13 Example 14 Example 15 Photosensitive conductive paste P-9 P-10 P-11 P-12 P-13 P-14 P-15 Conductive particles (A) A-2 A-2 A-2 A-2 A-1 A-1 A-1 Photosensitive organic ingredient (B) B-1 B-1 B-1 B-1 B-1 B-1 B-1 Inorganic particles (C) C-1 C-1 C-1 C-1 C-1 C-1 C-2 Paste composition ratio [mass %] Conductive particles (A) 76.9 76.9 76.9 76.9 76.9 71.5 71.3 Inorganic particles (C) 0.7 0.7 0.7 0.7 0.7 0.5 0.7 Photosensitive organic ingredient (B) Solid ingredients (excluding solvent) 9.1 9.1 9.1 9.1 9.1 11.3 11.3 solvent 13.4 13.4 13.4 13.4 13.4 16.7 16.7 Paste composition ratio [volume %] Conductive particles (A) 24.5 24.5 24.5 24.5 24.5 19.5 19.5 Inorganic particles (C) 1.1 1.1 1.1 1.1 1.1 0.6 0.6 Photosensitive organic ingredient (B) Solid ingredients (excluding solvent) 29.8 29.8 29.8 29.8 29.8 31.9 31.9 solvent 44.7 44.7 44.7 44.7 44.7 47.9 47.9 Median diameter r of conductive particles (A) [μm] 4.5 4.5 4.5 4.5 3.2 3.2 3.2 Volume fraction of conductive particles (A) in the total solid content V 1 [volume %] 44.2 44.2 44.2 44.2 44.2 37.5 37.5 Volume ratio of inorganic particles (B) to 100 volume % of conductive particles (A) V 2 [volume %] 3.1 3.6 6.0 8.5 11 2.7 2.7 r×V 1 ×V 2 617 716 1193 1691 1556 324 324 Evaluation results High-precision pattern processing A A A A C C D Volume resistivity [μΩ・cm] A(2.0) A(2.0) B(2.3) B(2.4) C(2.9) B(2.2) B(2.2) Sintering shrinkage [%] B(56.4) B(55.3) A(54.0) A(53.2) A(52.7) D(62.8) D(62.9)

[表4] [表4] 比較例1 比較例2 比較例3 比較例4 感光性導電糊 P-16 P-17 P-18 P-19 導電性粒子(A) A-2 A-2 A-5 A-6 感光性有機成分(B) B-1 B-1 B-1 B-1 無機粒子(C) C-1 C-1 C-1 C-1 糊 組成比 [質量%] 導電性粒子(A) 69.4 85.8 76.8 76.9 無機粒子(C) 0.7 0.8 0.5 1.0 感光性 有機成分(B) 固體成分(溶劑以外) 12.1 5.4 9.2 8.9 溶劑 17.9 8.0 13.5 13.2 糊 組成比 [體積%] 導電性粒子(A) 18.0 37.4 24.3 24.6 無機粒子(C) 0.8 1.7 0.7 1.6 感光性 有機成分(B) 固體成分(溶劑以外) 32.5 24.4 30.0 29.5 溶劑 48.7 36.6 45.0 44.3 導電性粒子(A)之 中位直徑 r [μm] 4.5 4.5 2.8 6.5 導電性粒子(A)之全固體成分中的 體積分率 V 1[體積%] 35.1 58.9 44.2 44.2 無機粒子(B)之相對於導電性粒子(A) 100體積%的體積比率 V 2[體積%] 4.3 4.3 4.3 4.3 r×V 1×V 2 679 1140 532 1235 評價 結果 高精細圖案 加工性 A E D E 體積電阻率[μΩ・cm] B(2.2) A(2.0) A(2.0) D(3.4) 燒結收縮率[%] E(63.5) - E(63.4) - [Table 4] [Table 4] Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Photosensitive conductive paste P-16 P-17 P-18 P-19 Conductive particles (A) A-2 A-2 A-5 A-6 Photosensitive organic ingredient (B) B-1 B-1 B-1 B-1 Inorganic particles (C) C-1 C-1 C-1 C-1 Paste composition ratio [mass %] Conductive particles (A) 69.4 85.8 76.8 76.9 Inorganic particles (C) 0.7 0.8 0.5 1.0 Photosensitive organic ingredient (B) Solid ingredients (excluding solvent) 12.1 5.4 9.2 8.9 solvent 17.9 8.0 13.5 13.2 Paste composition ratio [volume %] Conductive particles (A) 18.0 37.4 24.3 24.6 Inorganic particles (C) 0.8 1.7 0.7 1.6 Photosensitive organic ingredient (B) Solid ingredients (excluding solvent) 32.5 24.4 30.0 29.5 solvent 48.7 36.6 45.0 44.3 Median diameter r of conductive particles (A) [μm] 4.5 4.5 2.8 6.5 Volume fraction of conductive particles (A) in the total solid content V 1 [volume %] 35.1 58.9 44.2 44.2 Volume ratio of inorganic particles (B) to 100 volume % of conductive particles (A) V 2 [volume %] 4.3 4.3 4.3 4.3 r×V 1 ×V 2 679 1140 532 1235 Evaluation results High-precision pattern processing A E D E Volume resistivity [μΩ・cm] B(2.2) A(2.0) A(2.0) D(3.4) Sintering shrinkage [%] E(63.5) - E(63.4) -

[表5] [表5] 絕緣層之形成條件 電路圖案之形成條件 電路圖案剖面之觀察 導電圖案之評價 塗膜與 光罩之 間隙 曝光量 顯影時間 感光性 導電糊 塗膜之 最大 厚度 光罩之 開口 寬度 層厚度 頂部 寬度c 底部 寬度d d/c 空隙 導電 圖案 之寬度 導電圖案 長寬比 薄片 電阻值 μm mJ/cm 2 - μm μm μm μm μm - 分數 μm - 實施例16 100 100 60 P-3 15.0 20.0 10.0 20.0 15.0 0.75 0 12.0 0.75 2.54 實施例17 75 100 60 P-3 15.0 20.0 10.0 20.0 17.9 0.90 0 12.0 0.75 2.35 實施例18 50 100 60 P-3 15.0 20.0 10.0 20.0 19.0 0.95 1 12.0 0.75 2.90 實施例19 30 100 60 P-3 15.0 20.0 10.0 20.0 19.5 0.98 2 12.0 0.75 2.98 實施例20 300 100 60 P-3 15.0 20.0 10.0 20.0 10.0 0.50 0 12.0 0.75 2.96 比較例5 0 100 120 P-3 10.0 20.0 10.0 20.0 20.0 1.00 10 12.0 0.50 4.20 比較例6 0 170 180 P-3 20.0 20.0 20.0 20.0 20.0 1.00 10 12.0 1.00 3.70 [Table 5] [Table 5] Formation conditions of the insulating layer Circuit pattern formation conditions Observation of circuit pattern cross-section Evaluation of conductive patterns Gap between coating and mask Exposure Development time Photosensitive conductive paste Maximum coating thickness Mask opening width Layer thickness Top width c Bottom width d d/c gap Width of conductive pattern Conductive pattern aspect ratio Chip resistance μm mJ/cm 2 Second - μm μm μm μm μm - Score μm - Example 16 100 100 60 P-3 15.0 20.0 10.0 20.0 15.0 0.75 0 12.0 0.75 2.54 Example 17 75 100 60 P-3 15.0 20.0 10.0 20.0 17.9 0.90 0 12.0 0.75 2.35 Example 18 50 100 60 P-3 15.0 20.0 10.0 20.0 19.0 0.95 1 12.0 0.75 2.90 Example 19 30 100 60 P-3 15.0 20.0 10.0 20.0 19.5 0.98 2 12.0 0.75 2.98 Example 20 300 100 60 P-3 15.0 20.0 10.0 20.0 10.0 0.50 0 12.0 0.75 2.96 Comparative example 5 0 100 120 P-3 10.0 20.0 10.0 20.0 20.0 1.00 10 12.0 0.50 4.20 Comparative example 6 0 170 180 P-3 20.0 20.0 20.0 20.0 20.0 1.00 10 12.0 1.00 3.70

無。without.

無。without.

Claims (14)

一種感光性導電糊,其含有導電性粒子(A)、感光性有機成分(B)、及導電性粒子(A)以外的無機粒子(C),該導電性粒子(A)之粒徑分布的中位直徑r為3.0μm以上6.0μm以下,全固體成分中的該導電性粒子(A)之含量V1為37體積%以上55體積%以下,該無機粒子(C)之粒徑分布的中位直徑為1~100nm,相對於100體積%的該導電性粒子(A)之該無機粒子(C)之量V2為3體積%以上10體積%以下,該r、V1、V2之積r×V1×V2為500以上3300以下。 A photosensitive conductive paste comprises conductive particles (A), a photosensitive organic component (B), and inorganic particles (C) other than the conductive particles (A). The conductive particles (A) have a median diameter r of 3.0 μm or more and 6.0 μm or less in particle size distribution, a content V1 of the conductive particles (A) in the total solids content of 37 volume % or more and 55 volume % or less, a median diameter of the inorganic particles (C) of 1 to 100 nm in particle size distribution, an amount V2 of the inorganic particles (C) per 100 volume % of the conductive particles (A) of 3 volume % or more and 10 volume % or less, and a product of r, V1 , and V2 (r× V1 ×V2 ) of 500 or more and 3300 or less. 如請求項1之感光性導電糊,其中該無機粒子(C)含有選自包含氧化鈦、氧化鋁、氧化矽、堇青石、富鋁紅柱石、尖晶石及鈦酸鋇之群組中的至少一個。 The photosensitive conductive paste of claim 1, wherein the inorganic particles (C) contain at least one selected from the group consisting of titanium oxide, aluminum oxide, silicon oxide, cordierite, andalusite, spinel, and barium titanium oxide. 一種硬化物,其係將如請求項1或2之感光性導電糊硬化而成。 A cured product obtained by curing the photosensitive conductive paste according to claim 1 or 2. 如請求項3之硬化物,其膜厚t為10μm以上35μm以下。 For the cured product of claim 3, the film thickness t is not less than 10μm and not more than 35μm. 如請求項3或4之硬化物,其中膜厚t與線寬w之比值t/w為0.5以上1.0以下。 For the cured product of claim 3 or 4, the ratio of film thickness t to line width w (t/w) is not less than 0.5 and not more than 1.0. 如請求項3或4之硬化物,其中相對於頂部寬度a之底部寬度b之比值b/a為0.6以上1.0以下。 The hardened article of claim 3 or 4, wherein the ratio b/a of the bottom width b to the top width a is not less than 0.6 and not more than 1.0. 一種附電路圖案之絕緣性陶瓷層的製造方法,其具有:將如請求項1或2之感光性導電糊塗布於絕緣性陶瓷層上而得到塗布膜之步驟、將該塗布膜乾燥而得到乾燥膜之步驟、與將該乾燥膜曝光及顯影而得到電路圖案之步驟。 A method for manufacturing an insulating ceramic layer with a circuit pattern comprises: applying the photosensitive conductive paste of claim 1 or 2 onto the insulating ceramic layer to obtain a coating film; drying the coating film to obtain a dried film; and exposing and developing the dried film to obtain a circuit pattern. 一種電子零件的製造方法,其具有:藉由如請求項7之附電路圖案之絕緣性陶瓷層的製造方法而得到多個附電路圖案之絕緣性陶瓷層之步驟、將該多個附電路圖案之絕緣性陶瓷層進行積層及熱壓合而得到積層體之積層步驟、與將該積層體燒結之燒結步驟。 A method for manufacturing an electronic component comprises: a step of obtaining a plurality of insulating ceramic layers with a circuit pattern by the method for manufacturing an insulating ceramic layer with a circuit pattern as claimed in claim 7; a step of laminating and hot-pressing the plurality of insulating ceramic layers with a circuit pattern to obtain a laminate; and a step of sintering the laminate. 一種電子零件的製造方法,其具備:在藉由如請求項7之附電路圖案之絕緣性陶瓷層的製造方法所得之附電路圖案之絕緣性陶瓷層上依序重複多次以下的步驟A~步驟F而得到積層體之步驟、與將該積層體燒結之步驟;步驟A:將感光性絕緣性陶瓷組成物塗布而得到塗布膜之步驟,步驟B:將該塗布膜乾燥而得到乾燥膜之步驟,步驟C:將該乾燥膜曝光及顯影而得到絕緣性陶瓷層之步驟,步驟D:在該絕緣性陶瓷層上,塗布如請求項1或2之感光性導電糊而得到塗布膜之步驟,步驟E:將該塗布膜乾燥而得到乾燥膜之步驟,步驟F:將該乾燥膜曝光及顯影而得到電路圖案之步驟。 A method for manufacturing an electronic component, comprising: a step of obtaining a laminate by sequentially repeating the following steps A to F multiple times on an insulating ceramic layer with a circuit pattern obtained by the method for manufacturing an insulating ceramic layer with a circuit pattern as claimed in claim 7, and a step of sintering the laminate; step A: a step of applying a photosensitive insulating ceramic composition to obtain a coating film, step B: a step of applying a photosensitive insulating ceramic composition to a laminate; The coating film is dried to obtain a dry film. Step C: exposing and developing the dry film to obtain an insulating ceramic layer. Step D: applying the photosensitive conductive paste of claim 1 or 2 on the insulating ceramic layer to obtain a coating film. Step E: drying the coating film to obtain a dry film. Step F: exposing and developing the dry film to obtain a circuit pattern. 一種附電路圖案之基板的製造方法,其特徵為包含:將感光性絕緣性陶瓷組成物塗布於基材之步驟、將該感光性絕緣性陶瓷組成物之塗膜曝光成所欲之圖案之步驟、將該經曝光之感光性絕緣性陶瓷組成物之塗膜顯影而形成具有溝之絕緣層之步驟、將如請求項1或2之感光性導電糊塗布於該絕緣層上及該溝內之步驟、使該感光性導電糊之塗膜對應於該溝而曝光之步驟、以及將該經曝光之感光性導電糊之塗膜顯影而在對應於該溝之位置形成電路圖案之步驟;該溝係在側面具有錐體形狀。 A method for manufacturing a substrate with a circuit pattern, characterized by comprising the steps of: coating a photosensitive insulating ceramic composition on a substrate; exposing the coating of the photosensitive insulating ceramic composition to a desired pattern; and developing the exposed coating of the photosensitive insulating ceramic composition to form an insulating layer having grooves. , applying the photosensitive conductive paste of claim 1 or 2 on the insulating layer and in the trench, exposing the photosensitive conductive paste film corresponding to the trench, and developing the exposed photosensitive conductive paste film to form a circuit pattern at a position corresponding to the trench; the trench has a pyramidal shape on the side. 如請求項10之附電路圖案之基板的製造方法,其中在該溝中,相對於頂部寬度c之底部寬度d之比值d/c為0.30以上小於1.00。 The method for manufacturing a circuit pattern-attached substrate of claim 10, wherein in the trench, the ratio d/c of the bottom width d relative to the top width c is greater than or equal to 0.30 and less than 1.00. 如請求項10或11之附電路圖案之基板的製造方法,其中將該感光性導電糊塗布於該絕緣層上及該溝內之步驟中的感光性導電糊之黏度為3~50Pa‧s。 In the method for manufacturing a substrate with a circuit pattern according to claim 10 or 11, the viscosity of the photosensitive conductive paste in the step of applying the photosensitive conductive paste on the insulating layer and in the trench is 3-50 Pa·s. 如請求項10或11之附電路圖案之基板的製造方法,其中在將該感光性導電糊之塗膜曝光之步驟中,通過曝光光罩而曝光,該曝光光罩具有比該絕緣層之溝的頂部寬度A更窄的開口寬度。 The method for manufacturing a circuit patterned substrate according to claim 10 or 11, wherein in the step of exposing the coating of the photosensitive conductive paste, the exposure is performed through an exposure mask having an opening width narrower than the top width A of the trench of the insulating layer. 一種電感器的製造方法,其特徵為在步驟中包含如請求項10至13中任一項之附電路圖案之基板的製造方法。 A method for manufacturing an inductor, characterized by comprising the steps of manufacturing a substrate with a circuit pattern as described in any one of claims 10 to 13.
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