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TWI895380B - Film adhesive and dicing adhesive - Google Patents

Film adhesive and dicing adhesive

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Publication number
TWI895380B
TWI895380B TW110109231A TW110109231A TWI895380B TW I895380 B TWI895380 B TW I895380B TW 110109231 A TW110109231 A TW 110109231A TW 110109231 A TW110109231 A TW 110109231A TW I895380 B TWI895380 B TW I895380B
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TW
Taiwan
Prior art keywords
adhesive
film
aforementioned
film adhesive
dicing
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TW110109231A
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Chinese (zh)
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TW202141598A (en
Inventor
田中佑耶
佐藤陽輔
石井祐太郎
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日商琳得科股份有限公司
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Publication of TW202141598A publication Critical patent/TW202141598A/en
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Publication of TWI895380B publication Critical patent/TWI895380B/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/10Adhesives in the form of films or foils without carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • H10P72/7402
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • H10P72/7416

Landscapes

  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Engineering & Computer Science (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

本發明的膜狀接著劑13係硬化性之膜狀接著劑13,針對為多片膜狀接著劑13之積層物且厚度為200μm之第1試片,依據JIS K7128-3,將夾住並固定第1試片之一對夾具間的距離設為60mm、撕裂速度設為200mm/min,藉由直角形撕裂法進行撕裂試驗時,第1試片的撕裂強度成為最大後至第1試片斷裂為止的第1試片在撕裂方向上的位移量為15mm以下。The film-like adhesive 13 of the present invention is a curable film-like adhesive 13. For a first test piece having a thickness of 200 μm and being a laminate of multiple sheets of the film-like adhesive 13, in accordance with JIS K7128-3, the distance between a pair of clamps holding and securing the first test piece is set to 60 mm, and the tearing speed is set to 200 mm/min. When a tear test is performed using the right-angle tear method, the displacement of the first test piece in the tearing direction from the time the tear strength of the first test piece reaches its maximum until the first test piece breaks is less than 15 mm.

Description

膜狀接著劑以及切割黏晶片Film adhesive and dicing adhesive

本發明係關於一種膜狀接著劑以及切割黏晶片。本申請案基於2020年3月18日在日本提出申請之日本特願2020-048261號主張優先權,且將該申請案的內容引用至本文中。This invention relates to a film adhesive and a dicing adhesive wafer. This application claims priority based on Japanese Patent Application No. 2020-048261 filed in Japan on March 18, 2020, and the contents of that application are incorporated herein by reference.

半導體晶片通常藉由設置於該半導體晶片的內面之膜狀接著劑(有時亦稱為「黏晶膜」)而黏晶於基板的電路形成面。然後,視需要於該半導體晶片進而積層1個以上之半導體晶片,進行打線接合之後,藉由樹脂將所獲得之積層物整體進行密封,藉此製作半導體封裝體。然後,使用該半導體封裝體,製作目標半導體裝置。A semiconductor chip is typically die-bonded to the circuit-forming surface of a substrate using a film-like adhesive (sometimes called a "die-bond film") applied to the inner surface of the semiconductor chip. Subsequently, one or more semiconductor chips are stacked on top of the semiconductor chip as needed, wire-bonded, and sealed with a resin to create a semiconductor package. This semiconductor package is then used to manufacture the desired semiconductor device.

內面具備膜狀接著劑之半導體晶片例如藉由分割內面具備膜狀接著劑之半導體晶圓,並且亦切斷膜狀接著劑而製作。作為如此將半導體晶圓分割為半導體晶片之方法,例如廣泛利用有使用切割刀片,將半導體晶圓連同膜狀接著劑一起進行切割之方法。該情形時,切斷前的膜狀接著劑積層於用以於切割時固定半導體晶圓之支撐片(有時亦稱為「切割片」)並形成為一體而用作切割黏晶片。 切割結束後,將內面具備切斷後的膜狀接著劑之半導體晶片(具膜狀接著劑之半導體晶片)自支撐片扯離而進行拾取。Semiconductor chips with a film adhesive on the inside are produced, for example, by dividing a semiconductor wafer with a film adhesive on the inside and also cutting the film adhesive. As a method of dividing a semiconductor wafer into semiconductor chips in this way, for example, a method of using a dicing blade to cut the semiconductor wafer together with the film adhesive is widely used. In this case, the film adhesive before cutting is layered on a support sheet (sometimes also called a "dicing sheet") used to fix the semiconductor wafer during cutting and formed into a whole to be used as a cutting adhesive chip. After the cutting is completed, the semiconductor chip with the film adhesive on the inside after the cut (semiconductor chip with a film adhesive) is pulled off the support sheet and picked up.

拾取時,必須使膜狀接著劑與半導體晶片一起自支撐片良好地扯離。例如,若膜狀接著劑對支撐片之接著力過強,則變得難以拾取具膜狀接著劑之半導體晶片,膜狀接著劑自半導體晶片剝離而殘留於支撐片上。若此種膜狀接著劑的殘留頻率高,則不僅會引起步驟故障,半導體裝置的製造成本亦會上升。During pickup, the film adhesive must be pulled away from the support sheet along with the semiconductor chip. For example, if the film adhesive's adhesion to the support sheet is too strong, it becomes difficult to pick up the semiconductor chip with the film adhesive, and the film adhesive peels off the semiconductor chip, leaving residue on the support sheet. If the frequency of such film adhesive residue is high, it not only causes process failures but also increases the manufacturing cost of the semiconductor device.

相對於此,揭示有一種切割-黏晶一體型帶(相當於前述切割黏晶片),係由基材層、黏著層、接著層(相當於前述膜狀接著劑)依序積層之構成所構成,且照射電子束、紫外線或可見光線之前後的黏著層的斷裂伸長率調節為特定範圍(參照專利文獻1)。藉由使用該切割-黏晶一體型帶,即便減小拾取時對半導體晶片所施加之力,亦能夠良好地拾取具膜狀接著劑之半導體晶片。 [先前技術文獻] [專利文獻]In contrast, a dicing-and-bonding integrated tape (equivalent to the aforementioned dicing-and-bonding wafer) is disclosed. It comprises a base layer, an adhesive layer, and an adhesive layer (equivalent to the aforementioned film-like adhesive) stacked in sequence. The adhesive layer's elongation at break is regulated within a specific range before and after irradiation with an electron beam, ultraviolet light, or visible light (see Patent Document 1). Using this dicing-and-bonding integrated tape allows for efficient pickup of semiconductor chips with film-like adhesives, even while reducing the force applied to the semiconductor chips during pickup. [Prior Art Document] [Patent Document]

[專利文獻1]日本特開2015-126217號公報。[Patent Document 1] Japanese Patent Application Publication No. 2015-126217.

[發明所欲解決之課題][The problem that the invention aims to solve]

但是,關於引用文獻1中所記載之切割黏晶片(切割-黏晶一體型帶),為了提高具膜狀接著劑之半導體晶片的拾取適性,必須使用具備用以與膜狀接著劑直接接觸之黏著劑層之支撐片,支撐片的選項受到限定。However, in order to improve the pickup suitability of semiconductor chips with film adhesives, the dicing-bonding tape described in Reference 1 requires a support sheet having an adhesive layer in direct contact with the film adhesive, and the selection of the support sheet is limited.

本發明的目的在於提供一種膜狀接著劑以及具備前述膜狀接著劑之切割黏晶片,前述膜狀接著劑藉由與支撐片積層而能夠構成切割黏晶片,即便無需具備用以與膜狀接著劑直接接觸之黏著劑層之支撐片,於拾取具膜狀接著劑之半導體晶片時,亦能夠抑制膜狀接著劑殘留於支撐片。 [用以解決課題之手段]The present invention aims to provide a film adhesive and a dicing wafer equipped with the film adhesive. The film adhesive can be laminated with a support sheet to form a dicing wafer. Even without the need for a support sheet with an adhesive layer in direct contact with the film adhesive, the film adhesive can be prevented from remaining on the support sheet when picking up a semiconductor wafer equipped with the film adhesive. [Means for Solving the Problem]

本發明提供一種膜狀接著劑,係硬化性之膜狀接著劑,且針對為多片前述膜狀接著劑之積層物且厚度為200μm之第1試片,依據JIS K7128-3,將夾住並固定前述第1試片之一對夾具間的距離設為60mm、撕裂速度設為200mm/min,藉由直角形撕裂法進行撕裂試驗時,前述第1試片的撕裂強度成為最大後至前述第1試片斷裂為止的前述第1試片在撕裂方向上的位移量為15mm以下。 本發明的膜狀接著劑中,較佳為製作第2試片,該第2試片係具備大小為2mm×2mm且厚度為20μm之前述膜狀接著劑之硬化物、設置於前述硬化物的一面的整面且厚度為500μm之銅板、及設置於前述硬化物的另一面的整面且厚度為350μm之矽晶片,且前述硬化物的側面與前述矽晶片的側面經對位而構成之第2試片;於將前述銅板固定之狀態下,對前述第2試片中的前述硬化物的側面與前述矽晶片的側面經對位之部位,同時沿相對於前述硬化物的一面呈平行的方向,以200μm/sec之速度施加力時,直至前述硬化物遭到破壞、或前述硬化物自前述銅板剝離、或前述硬化物自前述矽晶片剝離為止所施加之前述力的最大值為100N/2mm□以上。The present invention provides a film-like adhesive, which is a curable film-like adhesive. For a first test piece, which is a laminate of multiple sheets of the film-like adhesive and has a thickness of 200 μm, the distance between a pair of clamps holding and securing the first test piece is set to 60 mm, and the tearing speed is set to 200 mm/min. When a tear test is conducted using a right-angle tear method in accordance with JIS K7128-3, the displacement of the first test piece in the tearing direction from the time the tear strength of the first test piece reaches a maximum until the first test piece breaks is no more than 15 mm. In the film adhesive of the present invention, it is preferred to prepare a second test piece, which is composed of a cured product of the aforementioned film adhesive having a size of 2 mm × 2 mm and a thickness of 20 μm, a copper plate having a thickness of 500 μm and disposed entirely on one side of the cured product, and a silicon wafer having a thickness of 350 μm and disposed entirely on the other side of the cured product, wherein the side surface of the cured product and the side surface of the silicon wafer are aligned with each other; With the copper plate fixed, a force is applied simultaneously at a rate of 200 μm/sec to the aligned portion of the side surface of the hardened material and the side surface of the silicon wafer in the second test piece in a direction parallel to one surface of the hardened material, until the hardened material is destroyed, or the hardened material is peeled off from the copper plate, or the hardened material is peeled off from the silicon wafer, with the maximum value of the force applied being 100 N/2 mm or greater.

本發明提供一種切割黏晶片,具備支撐片、及設置於前述支撐片的一面上之膜狀接著劑,且前述膜狀接著劑為上述之本發明的膜狀接著劑。 本發明的切割黏晶片中,較佳為前述支撐片僅由基材所構成。 [發明功效]The present invention provides a dicing adhesive wafer comprising a support sheet and a film-like adhesive disposed on one surface of the support sheet, wherein the film-like adhesive is the film-like adhesive of the present invention. In the dicing adhesive wafer of the present invention, the support sheet preferably consists solely of a substrate. [Effects of the Invention]

根據本發明,提供一種膜狀接著劑以及具備前述膜狀接著劑之切割黏晶片,前述膜狀接著劑藉由與支撐片積層而能夠構成切割黏晶片,即便無需具備用以與膜狀接著劑直接接觸之黏著劑層之支撐片,於拾取具膜狀接著劑之半導體晶片時,亦能夠抑制膜狀接著劑殘留於支撐片。According to the present invention, a film adhesive and a dicing adhesive wafer having the film adhesive are provided. The film adhesive can be laminated with a support sheet to form a dicing adhesive wafer. Even without the need for a support sheet having an adhesive layer for direct contact with the film adhesive, the film adhesive can be prevented from remaining on the support sheet when picking up a semiconductor wafer having the film adhesive.

◇膜狀接著劑 本發明的一實施形態的膜狀接著劑係硬化性之膜狀接著劑,且針對為多片前述膜狀接著劑之積層物且厚度為200μm之第1試片,依據JIS K7128-3,將夾住並固定前述第1試片之一對夾具間的距離設為60mm、撕裂速度設為200mm/min,藉由直角形撕裂法進行撕裂試驗時,前述第1試片的撕裂強度成為最大後至前述第1試片斷裂為止的前述第1試片在撕裂方向上的位移量(本說明書中,有時稱為「D0 」)為15mm以下。◇Film-like Adhesive: The film-like adhesive according to one embodiment of the present invention is a curable film-like adhesive. For a first test piece comprising a laminate of a plurality of sheets of the film-like adhesive and having a thickness of 200 μm, in accordance with JIS K7128-3, the distance between a pair of clamps holding and securing the first test piece is set to 60 mm, and the tear rate is set to 200 mm/min. When a tear test is conducted using a right-angle tear method, the displacement of the first test piece in the tear direction from the time the tear strength of the first test piece reaches a maximum until the first test piece breaks (sometimes referred to as "D 0 " in this specification) is 15 mm or less.

本實施形態的膜狀接著劑藉由與支撐片或切割片積層而能夠構成切割黏晶片。 另外,本實施形態的膜狀接著劑藉由具有此種撕裂特性,即便不使用具備用以與膜狀接著劑直接接觸之黏著劑層之支撐片或切割片,於拾取具膜狀接著劑之半導體晶片時,亦能夠抑制膜狀接著劑殘留於支撐片或切割片。並且,藉此能夠抑制產生步驟故障,亦能夠降低半導體裝置的製造成本。The film adhesive of this embodiment can be laminated with a support sheet or dicing sheet to form a dicing adhesive wafer. Furthermore, due to its tearing properties, the film adhesive of this embodiment can prevent film adhesive residue from remaining on the support sheet or dicing sheet when picking up semiconductor wafers coated with the film adhesive, even without using a support sheet or dicing sheet with an adhesive layer for direct contact with the film adhesive. This can also prevent process failures and reduce semiconductor device manufacturing costs.

本實施形態的膜狀接著劑具有硬化性,可為熱硬化性及能量線硬化性之任一種,亦可具有熱硬化性及能量線硬化性之兩種特性。於前述膜狀接著劑具有熱硬化性及能量線硬化性之兩種特性之情形時,當對於前述膜狀接著劑之硬化而言,熱硬化之貢獻大於能量線硬化之貢獻時,將前述膜狀接著劑視為熱硬化性。反之,當對於前述膜狀接著劑之硬化而言,能量線硬化之貢獻大於熱硬化之貢獻時,將前述膜狀接著劑視為能量線硬化性。例如,於藉由將膜狀接著劑加熱而不對膜狀接著劑照射能量線來使膜狀接著劑硬化之情形時,將該膜狀接著劑視為熱硬化性。The film-like adhesive of this embodiment has curing properties, which may be either heat curing or energy ray curing, or may have both properties. In the case where the film-like adhesive has both properties, if the contribution of heat curing to the curing of the film-like adhesive is greater than that of energy ray curing, the film-like adhesive is considered to be heat curing. Conversely, if the contribution of energy ray curing to the curing of the film-like adhesive is greater than that of heat curing, the film-like adhesive is considered to be energy ray curing. For example, when the film-like adhesive is cured by heating it without irradiating it with energy rays, the film-like adhesive is considered to be heat curing.

本說明書中,所謂「能量線」,意指具有能量量子之電磁波或帶電粒子束。作為能量線的示例,可列舉紫外線、放射線、電子束等。紫外線例如可藉由使用高壓水銀燈、熔合燈、氙氣燈、黑光燈或LED(Light Emitting Diode;發光二極體)燈等作為紫外線源而進行照射。電子束能夠照射藉由電子束加速器等產生之電子束。 本說明書中,所謂「能量線硬化性」,意指藉由照射能量線而硬化之性質,所謂「非能量線硬化性」,意指即便照射能量線亦不硬化之性質。In this specification, the term "energy ray" refers to electromagnetic waves or charged particle beams with energy quanta. Examples of energy rays include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated using, for example, a high-pressure mercury lamp, fusion lamp, xenon lamp, black light lamp, or LED (Light Emitting Diode) lamp as an ultraviolet ray source. Electron beams can be irradiated using electron beams generated by, for example, an electron beam accelerator. In this specification, "energy ray-hardenable" refers to the property of hardening by irradiation with energy rays, and "non-energy ray-hardenable" refers to the property of not hardening even by irradiation with energy rays.

於前述膜狀接著劑具有熱硬化性之情形時,較佳為具有感壓接著性。一併具有熱硬化性及感壓接著性之膜狀接著劑能夠以未硬化狀態藉由輕輕地按壓而貼附於各種被接著體。另外,膜狀接著劑亦可為能夠藉由加熱軟化而貼附於各種被接著體。膜狀接著劑藉由硬化而最終成為耐衝擊性高之硬化物,該硬化物於嚴酷的高溫、高濕度條件下亦能夠保持充分的接著特性。When the aforementioned film adhesive is thermosetting, it is preferably pressure-sensitive. Film adhesives that exhibit both thermosetting and pressure-sensitive properties can adhere to various substrates by lightly pressing in their uncured state. Alternatively, film adhesives can be softened by heat and adhered to various substrates. Curing of the film adhesive ultimately results in a highly impact-resistant cured product that maintains sufficient adhesive properties even under extreme high temperature and high humidity conditions.

於實際使用前述膜狀接著劑之硬化物時,關於使膜狀接著劑硬化而形成硬化物時的硬化條件,只要前述硬化物的硬化度變得足夠高,則並無特別限定,根據膜狀接著劑的種類適宜選擇即可。 熱硬化性膜狀接著劑之熱硬化時的加熱溫度較佳為100℃至200℃,例如可為125℃至185℃、及150℃至170℃之任一種。並且,前述熱硬化時的加熱時間較佳為0.5小時至5小時,例如可為0.5小時至4小時、及0.5小時至3小時之任一種。 能量線硬化性膜狀接著劑之能量線硬化時的能量線的照度較佳為60mW/cm2 至320mW/cm2 。並且,前述能量線硬化時的能量線的光量較佳為100mJ/cm2 至1000mJ/cm2When the cured product of the aforementioned film adhesive is actually used, the curing conditions for forming the cured product are not particularly limited, as long as the degree of hardening of the cured product is sufficiently high. These conditions can be appropriately selected depending on the type of film adhesive. The heating temperature for heat-curing a thermosetting film adhesive is preferably 100°C to 200°C, and can be, for example, 125°C to 185°C or 150°C to 170°C. Furthermore, the heating time for heat-curing is preferably 0.5 to 5 hours, and can be, for example, 0.5 to 4 hours or 0.5 to 3 hours. The irradiance of the energy beam during energy-beam curing of an energy-beam-curable film adhesive is preferably 60 mW/ cm² to 320 mW/ cm² . Furthermore, the amount of energy beam during the energy beam curing is preferably 100 mJ/cm 2 to 1000 mJ/cm 2 .

[D0 ] 作為D0 之測定對象之前述第1試片例如可藉由下述方式來製作:使用厚度未達200μm之本實施形態的多片膜狀接著劑,積層這些膜狀接著劑,製作合計厚度為200μm之積層片,然後將該積層片切斷成所規定之形狀及尺寸,而可依據JIS K7128-3測定撕裂強度。 第1試片的俯視圖與第1試片的尺寸一併表示於圖1。圖1中的第1試片99中,表示長度之數值的單位為「mm」。[D 0 ] The first test piece described above as the object of D 0 measurement can be produced, for example, by using multiple sheets of film-like adhesive according to this embodiment having a thickness of less than 200 μm, laminating these sheets to produce a laminated sheet having a total thickness of 200 μm. This laminated sheet is then cut into the specified shape and dimensions, and the tear strength can be measured in accordance with JIS K7128-3. A top view of the first test piece is shown in FIG1 , along with the dimensions of the first test piece. In FIG1 , the length values for the first test piece 99 are expressed in "mm."

構成第1試片及前述積層片之多片前述膜狀接著劑的厚度可全部相同,亦可全部皆不同,還可僅一部分相同。但是,就能夠更容易地製作第1試片及前述積層片之方面而言,多片前述膜狀接著劑的厚度較佳為全部相同。The thickness of the plurality of film-like adhesive sheets constituting the first test piece and the laminated sheet may be the same for all, different for all, or only partially the same. However, in order to facilitate the production of the first test piece and the laminated sheet, it is preferred that the thickness of the plurality of film-like adhesive sheets be the same for all.

構成第1試片及前述積層片之前述膜狀接著劑的片數只要為2片以上,則並無特別限定,可根據各個膜狀接著劑的厚度任意選擇。 例如,於使多片前述膜狀接著劑的厚度全部相同之情形時,若亦考慮更容易製作1片膜狀接著劑之方面,則藉由使用厚度為20μm之10片膜狀接著劑,能夠更容易地製作第1試片及前述積層片。但是,這係一例,所使用之膜狀接著劑的片數及厚度並不限定於此。The number of film adhesive sheets constituting the first test piece and the aforementioned laminated sheet is not particularly limited, as long as it is two or more sheets. The number of sheets can be arbitrarily selected based on the thickness of each film adhesive. For example, if multiple sheets of the aforementioned film adhesive have the same thickness, and if it is also considered easier to produce a single film adhesive sheet, then using ten sheets of film adhesive with a thickness of 20 μm can facilitate production of the first test piece and the aforementioned laminated sheet. However, this is merely an example, and the number of sheets and thickness of the film adhesive used are not limited to this.

對第1試片所進行之前述「直角形撕裂法」係JIS K7128-3中所規定之「塑膠-膜及片的撕裂強度試驗方法,第3部:直角形撕裂法」。 所謂於藉由夾具將第1試片夾住並固定時,一對夾具間的距離設為60mm,意指於進行撕裂試驗時,在第1試片的撕裂方向上,第1試片的可伸長部分的長度在進行撕裂試驗之前的階段為60mm,該長度係第1試片之撕裂試驗之對象部分的長度。The aforementioned "right-angle tear method" performed on the first specimen follows the "Plastics - Film and Sheeting - Test Methods for Tear Strength, Part 3: Right-Angled Tear Method" specified in JIS K7128-3. The distance between the clamps used to hold the first specimen in place during the tear test is 60 mm. This means that the elongated portion of the first specimen, in the tear direction, is 60 mm before the tear test begins. This length represents the length of the portion of the first specimen being tested.

於進行前述撕裂試驗時,第1試片在第1試片的撕裂方向上伸長,伴隨著第1試片之伸長,第1試片的撕裂強度增大。並且,第1試片的撕裂強度成為最大後,進而使第1試片伸長,第1試片會在某一階段中斷裂。 所謂進行前述撕裂試驗時的第1試片在撕裂方向上的位移量,係指自撕裂試驗中的任一時點的前述夾具間的距離,減去較此之前的任一時點的前述夾具間的距離所得之數值,相當於這些不同時間點時第1試片在撕裂方向上的長度之差。並且,D0 係自第1試片的撕裂強度成為最大後進而斷裂時的前述夾具間的距離Sb ,減去第1試片的撕裂強度成為最大時的前述夾具間的距離Sm 所得之數值(Sb -Sm )。During the tear test, the first specimen stretches in the tear direction. As the first specimen stretches, its tear strength increases. Furthermore, after reaching its maximum tear strength, the first specimen stretches further, causing it to break at some point. The displacement of the first specimen in the tear direction during the tear test is defined as the distance between the clamps at any point during the tear test minus the distance between the clamps at any prior point. This value is equivalent to the difference in the length of the first specimen in the tear direction at these different points in time. Furthermore, D0 is a value obtained by subtracting the distance Sm between the clamps when the tear strength of the first specimen reaches a maximum from the distance Sb between the clamps when the tear strength of the first specimen reaches a maximum and then breaks ( Sb - Sm ).

本實施形態的膜狀接著劑中,D0 為15mm以下,就上述之抑制膜狀接著劑殘留於支撐片之效果變得更高之方面而言,較佳為14.5mm以下,例如可為13mm以下、及10mm以下之任一種。In the film adhesive of this embodiment, D 0 is 15 mm or less. In order to enhance the effect of suppressing the film adhesive from remaining on the support sheet, it is preferably 14.5 mm or less. For example, it can be 13 mm or less or 10 mm or less.

D0 的下限值並無特別限定。例如,D0 為5mm以上之前述膜狀接著劑能夠更容易地製造。The lower limit of D 0 is not particularly limited. For example, when D 0 is 5 mm or more, the aforementioned film adhesive can be produced more easily.

D0 可為將上述之下限值與任一上限值任意組合而設定之範圍內的任一數值範圍。例如,一實施形態中,D0 較佳為5mm至15mm,更佳為5mm至14.5mm,例如可為5mm至13mm、及5mm至10mm之任一種。但是,這些係D0 的一例。D 0 can be any numerical range defined by combining the aforementioned lower limit with any upper limit. For example, in one embodiment, D 0 is preferably 5 mm to 15 mm, more preferably 5 mm to 14.5 mm, and can be, for example, 5 mm to 13 mm or 5 mm to 10 mm. However, these are merely examples of D 0 .

D0 可藉由調節膜狀接著劑的含有成分的種類或量等而進行調節。例如,可藉由調節膜狀接著劑中的常溫下為固形之成分、交聯劑等的種類或量等,而於廣泛之範圍內調節D0 。於熱硬化性膜狀接著劑之情形時,可藉由調節後述之聚合物成分(a)、常溫下為固形之環氧樹脂(b1)、交聯劑(f)等的種類或量等,而於廣泛之範圍內調節D0 D0 can be adjusted by adjusting the types and amounts of the film adhesive's components. For example, D0 can be adjusted over a wide range by adjusting the types and amounts of components solid at room temperature and crosslinking agents in the film adhesive. In the case of thermosetting film adhesives, D0 can be adjusted over a wide range by adjusting the types and amounts of the polymer component (a), the room temperature solid epoxy resin (b1), the crosslinking agent ( f ), and other components described below.

本說明書中,所謂「常溫」,意指不特別冷或特別熱的溫度,亦即平常的溫度,例如可列舉15℃至25℃之溫度等。In this manual, "normal temperature" refers to a temperature that is neither particularly cold nor particularly hot, that is, a normal temperature, for example, 15°C to 25°C.

[膜狀接著劑之硬化物的接著力] 使用本實施形態的膜狀接著劑所製作之具膜狀接著劑之半導體晶片藉由當中的膜狀接著劑而接著(黏晶)於基板的電路形成面。進而,膜狀接著劑最終藉由照射能量線而硬化。 因此,對於前述膜狀接著劑之硬化物,要求對前述膜狀接著劑之硬化物之接著對象物具有充分的接著力。[Adhesion Strength of Cured Film Adhesive] A semiconductor chip with a film adhesive produced using the film adhesive of this embodiment is bonded (die-bonded) to the circuit-forming surface of a substrate via the film adhesive. The film adhesive is then cured by irradiation with energy beams. Therefore, the cured film adhesive is required to exhibit sufficient adhesion to the object to which it is bonded.

前述膜狀接著劑之硬化物的接著力的程度例如可藉由將力(亦即,接著力)的最大值作為指標來判斷,前述力(亦即,接著力)係製作第2試片(具備大小為2mm×2mm且厚度為20μm之前述膜狀接著劑之硬化物、設置於前述硬化物的一面的整面且厚度為500μm之銅板、及設置於前述硬化物的另一面的整面且厚度為350μm之矽晶片,且前述硬化物的側面與前述矽晶片的側面經對位而構成),於將前述銅板固定之狀態下,對前述第2試片中的前述硬化物的側面與前述矽晶片的側面經對位之部位,同時沿相對於前述硬化物的一面呈平行的方向,以200μm/sec之速度施加力時,直至前述硬化物遭到破壞、或前述硬化物自前述銅板剝離、或前述硬化物自前述矽晶片剝離為止所施加之力。 前述第2試片中,前述硬化物與前述矽晶片可厚度以外的尺寸相互相同,進而亦可相互的全部的側面呈對位狀態。此種第2試片如後文實施例中所述般容易製作。The degree of the bonding force of the cured product of the film adhesive can be determined, for example, by using as an index the maximum value of the force (i.e., bonding force) obtained by preparing a second test piece (having the cured product of the film adhesive ... (The side surfaces of the cured product and the side surfaces of the silicon wafer are aligned.) With the copper plate fixed, a force is simultaneously applied at a rate of 200 μm/sec in a direction parallel to one surface of the cured product to the aligned portion of the second test piece until the cured product is destroyed, peeled from the copper plate, or peeled from the silicon wafer. In the second test piece, the cured product and the silicon wafer may have identical dimensions other than thickness, and may also have their entire side surfaces aligned. This second test piece is easily manufactured as described in the Examples below.

圖2係用於以示意方式說明前述膜狀接著劑之硬化物的前述接著力的測定方法之剖視圖。 此外,為了易於理解本發明的特徵,方便起見,以下之說明中所使用之圖有時將成為要部之部分放大表示,而並不限於各構成要素的尺寸比率等與實際相同。 另外,於圖2以後的圖中,對與既已說明之圖所示相同的構成要素,標附與該已說明之圖之情形相同的符號,並省略該構成要素之詳細說明。Figure 2 is a cross-sectional view used to schematically illustrate the aforementioned method for measuring the bonding strength of a cured film adhesive. To facilitate understanding of the features of the present invention, the following illustrations sometimes show enlarged portions of essential components for convenience. However, the dimensional ratios and other aspects of the components are not necessarily the same as in actual figures. In the figures following Figure 2, components identical to those shown in a previously described figure are designated by the same reference numerals as in the previously described figure, and detailed descriptions of these components are omitted.

於前述接著力之測定時,製作第2試片9。 第2試片9係具備膜狀接著劑之硬化物90、設置於前述硬化物90的一面(本說明書中,有時稱為「第2面」)90b的整面之銅板91、及設置於前述硬化物90的另一面(本說明書中,有時稱為「第1面」)90a的整面之矽晶片92而構成。During the aforementioned adhesion measurement, a second test piece 9 was prepared. The second test piece 9 comprised a cured film adhesive 90, a copper plate 91 disposed entirely on one side 90b of the cured film 90 (sometimes referred to as the "second side" in this specification), and a silicon wafer 92 disposed entirely on the other side 90a of the cured film 90 (sometimes referred to as the "first side" in this specification).

膜狀接著劑之硬化物90係本實施形態的膜狀接著劑之硬化物。前述硬化物90的前述第1面90a及第2面90b的平面形狀係矩形(正方形)。 前述硬化物90的大小(前述第1面90a及第2面90b的大小)為2mm×2mm,前述硬化物90的厚度為20μm。The cured film adhesive 90 is a cured film adhesive of this embodiment. The planar shapes of the first surface 90a and the second surface 90b of the cured film adhesive 90 are rectangular (square). The dimensions of the cured film adhesive 90 (the dimensions of the first surface 90a and the second surface 90b) are 2 mm x 2 mm, and the thickness of the cured film adhesive 90 is 20 μm.

銅板91的厚度為500μm,矽晶片92的厚度為350μm。The thickness of the copper plate 91 is 500 μm, and the thickness of the silicon wafer 92 is 350 μm.

第2試片9中,使膜狀接著劑之硬化物90的側面90c與矽晶片92的側面92c對位,例如,於該剖面中,於相對於膜狀接著劑90的第1面90a或第2面90b呈平行的方向上,膜狀接著劑90的側面90c的位置與矽晶片92的側面92c的位置一致。In the second test piece 9, the side surface 90c of the cured film adhesive 90 is aligned with the side surface 92c of the silicon wafer 92. For example, in the cross section, the position of the side surface 90c of the film adhesive 90 is aligned with the position of the side surface 92c of the silicon wafer 92 in a direction parallel to the first surface 90a or the second surface 90b of the film adhesive 90.

較佳為矽晶片92的側面92c中,至少與膜狀接著劑之硬化物90的側面90c對位之部位為平面。 矽晶片92之與前述硬化物90之接觸面的大小相對於前述硬化物90的第1面90a的大小為同等以上即可,亦可相同。 矽晶片92與前述硬化物90之接觸面的平面形狀較佳為矩形,例如亦可為正方形,較佳為與前述硬化物90的第1面90a的平面形狀相同。 如後文實施例中所述,藉由膜狀接著劑(省略圖示)之切斷及硬化而形成前述硬化物90,藉由矽晶圓(省略圖示)之分割而形成矽晶片92時,可採用連續地進行這些切斷及分割之製程,該情形時,能夠使矽晶片92與前述硬化物90之接觸面和前述硬化物90的第1面90a成為相互相同的大小且相同的形狀,而且,前述硬化物90的側面90c與矽晶片92的側面92c之對位亦容易。Preferably, at least the portion of side surface 92c of silicon wafer 92 that aligns with side surface 90c of cured film adhesive 90 is flat. The size of the surface of silicon wafer 92 in contact with cured film 90 may be equal to or larger than the size of first surface 90a of cured film 90, or may be the same. The planar shape of the surface of silicon wafer 92 in contact with cured film 90 is preferably rectangular, but may be square, and is preferably the same as the planar shape of first surface 90a of cured film 90. As described in the embodiments below, when the cured product 90 is formed by cutting and curing a film adhesive (not shown), and the silicon wafer 92 is formed by dividing a silicon wafer (not shown), these cutting and dividing processes can be performed continuously. In this case, the contact surface between the silicon wafer 92 and the cured product 90 and the first surface 90a of the cured product 90 can be made to be the same size and shape. In addition, the side surface 90c of the cured product 90 and the side surface 92c of the silicon wafer 92 can be easily aligned.

銅板91與膜狀接著劑之硬化物90之接觸面的大小相對於前述硬化物90的第2面90b的大小為同等以上即可,以大為佳。 關於銅板91與前述硬化物90之接觸面的平面形狀,只要能夠使銅板91覆蓋前述硬化物90的第2面90b的整面,則並無特別限定,例如亦可為矩形。The size of the contact surface between the copper plate 91 and the cured film adhesive 90 can be equal to or larger than the size of the second surface 90b of the cured product 90, preferably larger. The planar shape of the contact surface between the copper plate 91 and the cured product 90 is not particularly limited, as long as the copper plate 91 covers the entire second surface 90b of the cured product 90. For example, a rectangular shape is acceptable.

於前述接著力之測定時,於將銅板91固定之狀態下,對第2試片9中的膜狀接著劑之硬化物90的側面90c與矽晶片92的側面92c經對位之部位,同時沿相對於前述硬化物90的一面(前述第1面90a或第2面90b)呈平行的方向,以200μm/sec之速度施加力P。此處係表示使用按壓機構8對上述之對位部位施加力P之情形。 就能夠更高精度地測定前述接著力之方面而言,按壓機構8中之施加力之部位較佳為平面,按壓機構8更佳為平板狀。 作為按壓機構8的構成材料,例如可列舉金屬等。During the aforementioned adhesion force measurement, with copper plate 91 fixed, a force P was simultaneously applied at a rate of 200 μm/sec in a direction parallel to one surface (first surface 90a or second surface 90b) of the cured film adhesive 90 in the second test piece 9, where the cured film adhesive is aligned. This illustrates the application of force P to the alignment point using pressing mechanism 8. To achieve more accurate adhesion force measurement, the force-applying area of pressing mechanism 8 is preferably a flat surface, and pressing mechanism 8 is more preferably a flat plate. Examples of materials for pressing mechanism 8 include metals.

如上述,對膜狀接著劑之硬化物90及矽晶片92同時施加力P時,較佳為不使按壓機構8接觸於銅板91。As described above, when force P is applied simultaneously to the cured film adhesive 90 and the silicon wafer 92 , it is preferable that the pressing mechanism 8 does not contact the copper plate 91 .

本實施形態中,如此採用下述力P的最大值作為前述硬化物90的接著力,前述力P係對膜狀接著劑之硬化物90的側面90c與矽晶片92的側面92c經對位之部位施加力P,直至前述硬化物90遭到破壞、或前述硬化物90自銅板91剝離、或前述硬化物90自矽晶片92剝離為止所施加之力。In this embodiment, the maximum value of the force P is used as the bonding force of the cured article 90. The force P is applied to the aligned portion of the side surface 90c of the cured article 90 of the film adhesive and the side surface 92c of the silicon wafer 92 until the cured article 90 is destroyed, or the cured article 90 is peeled off from the copper plate 91, or the cured article 90 is peeled off from the silicon wafer 92.

膜狀接著劑之硬化物的前述接著力較佳為100N/2mm□以上,更佳為110N/2mm□以上,例如可為125N/2mm□以上及140N/2mm□以上之任一種。The aforementioned bonding force of the cured product of the film adhesive is preferably 100N/2mm□ or more, more preferably 110N/2mm□ or more, for example, it can be any one of 125N/2mm□ or more and 140N/2mm□ or more.

前述接著力的上限值並無特別限定。例如,前述接著力成為300N/2mm□以下之前述膜狀接著劑能夠更容易地製造。The upper limit of the bonding force is not particularly limited. For example, if the bonding force is 300 N/2 mm or less, the film adhesive can be manufactured more easily.

前述接著力可為將上述之任一下限值與上限值任意組合而設定之範圍內的任一數值範圍。例如,一實施形態中,前述接著力較佳為100N/2mm□至300N/2mm□,更佳為110N/2mm□至300N/2mm□,例如可為125N/2mm□至300N/2mm□及140N/2mm□至300N/2mm□之任一種。但是,這些係前述接著力的一例。The aforementioned holding force can be any numerical range within a range set by arbitrarily combining any of the above lower and upper limits. For example, in one embodiment, the aforementioned holding force is preferably 100N/2mm□ to 300N/2mm□, more preferably 110N/2mm□ to 300N/2mm□, and can be, for example, 125N/2mm□ to 300N/2mm□ or 140N/2mm□ to 300N/2mm□. However, these are merely examples of the aforementioned holding force.

本實施形態中,規定前述接著力之第2試片中的膜狀接著劑之硬化物係藉由將熱硬化性膜狀接著劑於160℃進行1小時加熱處理而獲得之熱硬化物。前述硬化物中亦包含一併具有熱硬化性及能量線硬化性之膜狀接著劑之硬化物。此種硬化物中例如亦包含藉由對熱硬化前的膜狀接著劑照射能量線來獲得未完全硬化之半硬化物,進而將所獲得之半硬化物於160℃進行1小時加熱處理而獲得之熱硬化物。In this embodiment, the cured product of the film adhesive in the second test piece for adhesion is a heat-cured product obtained by heating a thermosetting film adhesive at 160°C for one hour. The cured product also includes cured products of film adhesives that have both thermosetting and energy-beam curing properties. Such cured products also include, for example, a thermosetting product obtained by irradiating a pre-thermosetting film adhesive with energy beams to obtain a semi-cured product that is not fully cured, and then heating the resulting semi-cured product at 160°C for one hour.

本說明書中,單位「N/2mm□」與「N/(2mm×2mm)」同義。In this manual, the unit "N/2mm□" is synonymous with "N/(2mm×2mm)".

前述接著力可藉由調節膜狀接著劑的含有成分的種類或量等而進行調節。例如,可藉由調節膜狀接著劑所含有之聚合物成分、硬化性成分、填充材料及偶合劑等的種類或量等,而於廣泛之範圍內調節前述接著力。於熱硬化性膜狀接著劑之情形時,可藉由調節後述之聚合物成分(a)、熱硬化性成分(b)、填充材料(d)及偶合劑(e)等的種類或量等,而於廣泛之範圍內調節前述接著力。The aforementioned adhesive strength can be adjusted by adjusting the types and amounts of the film adhesive's components. For example, the adhesive strength can be adjusted over a wide range by adjusting the types and amounts of the polymer component, curing component, filler, and coupling agent contained in the film adhesive. In the case of a thermosetting film adhesive, the adhesive strength can be adjusted over a wide range by adjusting the types and amounts of the polymer component (a), thermosetting component (b), filler (d), and coupling agent (e), described below.

[ΔT] 本實施形態的膜狀接著劑藉由以下所示之ΔT(N/mm)為特定範圍,使得上述之抑制膜狀接著劑殘留於支撐片之效果變得更高。 前述ΔT可利用以下所示之方法算出。 亦即,針對為多片前述膜狀接著劑之積層物且厚度為200μm之第1試片,依據JIS K7128-3,將夾住並固定前述第1試片之一對夾具間的距離設為60mm、撕裂速度設為200mm/min,藉由直角形撕裂法進行撕裂試驗,當前述第1試片的撕裂強度顯示最大值Tmax 之情形時的前述第1試片在撕裂方向上的位移量設為D1 、前述位移量為0.6D1 之情形時的前述撕裂強度設為T1 時,藉由下述式:ΔT=(T1 /0.6)-Tmax 所算出。[ΔT] The film adhesive of this embodiment achieves a higher effect in suppressing film adhesive residue on the support sheet by maintaining the ΔT (N/mm) within the specified range shown below. ΔT can be calculated using the following method. Specifically, a first test piece, which is a laminate of multiple sheets of the aforementioned film-like adhesive and has a thickness of 200 μm, was subjected to a tear test using the right-angle tear method in accordance with JIS K7128-3, with the distance between a pair of clamps holding and securing the first test piece set to 60 mm and a tear rate set to 200 mm/min. The tear strength was calculated using the following formula: ΔT = (T 1 /0.6) - T max , with the displacement of the first test piece in the tear direction when the tear strength of the first test piece reached its maximum value, T max , being D 1 , and the tear strength when the displacement was 0.6 D 1 being T 1 .

ΔT之算出時所使用之前述第1試片與前文所說明之D0 之測定時所使用之第1試片相同,ΔT之算出時所進行之前述撕裂試驗與前文所說明之D0 之測定時所進行之撕裂試驗相同。亦即,ΔT之算出與D0 之測定可同時進行。The first specimen used in calculating ΔT is the same as the first specimen used in the D 0 measurement described above. The tear test performed in calculating ΔT is the same as the tear test performed in the D 0 measurement described above. In other words, ΔT calculation and D 0 measurement can be performed simultaneously.

一座標軸(縱軸)取第1試片的撕裂強度T,與前述一座標軸正交之另一座標軸(橫軸)取第1試片在撕裂方向上的位移量D,考慮T-D平面。 前述式中的「T1 /0.6」係於前述T-D平面中通過原點(0,0)及座標(0.6D1 ,T1 )之2點之直線:T=(T1 /0.6D1 )D上,D=D1 時的T的值。 前述T-D平面中,將第1試片的T及D進行繪圖,藉此獲得曲線。於該曲線相對於T增大之方向具有凸狀之形狀之情形時,下述式:T1 /0.6>Tmax 、亦即(T1 /0.6)-Tmax >0之關係成立,與此相反,於該曲線相對於T減小之方向具有凸狀之形狀之情形時,下述式:T1 /0.6<Tmax 、亦即(T1 /0.6)-Tmax <0之關係成立。 本實施形態的膜狀接著劑中,於前述曲線的形狀為任一種之情形時,均較佳為「(T1 /0.6)」與「Tmax 」之差為10N/mm以下、亦即ΔT的絕對值(|ΔT|)為10N/mm以下(-10N/mm≦ΔT≦10N/mm)。藉由滿足此種條件,使得上述之抑制膜狀接著劑殘留於支撐片之效果變得更高。Consider the TD plane, with the tear strength T of the first specimen measured on one axis (the vertical axis) and the displacement D of the first specimen in the tear direction measured on another axis (the horizontal axis) perpendicular to the vertical axis. "T 1 /0.6" in the above equation is the value of T when D = D 1 , along a straight line passing through the origin (0,0) and the coordinates (0.6D 1 , T 1 ) in the TD plane: T = (T 1 /0.6D 1 ). Plot T and D for the first specimen in the TD plane to obtain a curve. When the curve has a convex shape with respect to the direction in which T increases, the following relationship holds: T 1 /0.6 > T max , or (T 1 /0.6) - T max > 0. Conversely, when the curve has a convex shape with respect to the direction in which T decreases, the following relationship holds: T 1 /0.6 < T max , or (T 1 /0.6) - T max < 0. In the film adhesive of this embodiment, in any of the aforementioned curve shapes, it is preferred that the difference between "(T 1 /0.6)" and "T max " be 10 N/mm or less, that is, the absolute value of ΔT (|ΔT|) be 10 N/mm or less (-10 N/mm ≦ ΔT ≦ 10 N/mm). By satisfying this condition, the effect of inhibiting film adhesive residue from remaining on the support sheet is enhanced.

就上述之效果進一步變高之方面而言,|ΔT|例如可為7N/mm以下、5N/mm以下、及3N/mm以下之任一種。In order to further enhance the above-mentioned effect, |ΔT| may be, for example, 7 N/mm or less, 5 N/mm or less, or 3 N/mm or less.

|ΔT|的下限值並無特別限定。例如,|ΔT|成為1N/mm以上之前述膜狀接著劑能夠更容易地製造。The lower limit of |ΔT| is not particularly limited. For example, when |ΔT| is 1 N/mm or more, the aforementioned film adhesive can be produced more easily.

|ΔT|可為將上述之下限值與任一上限值任意組合而設定之範圍內的任一數值範圍。例如,一實施形態中,|ΔT|較佳為1N/mm至10N/mm以下,例如可為1N/mm至7N/mm、1N/mm至5N/mm、及1N/mm至3N/mm之任一種。但是,這些係|ΔT|的一例。|ΔT| can be any numerical range defined by combining the aforementioned lower limit with any upper limit. For example, in one embodiment, |ΔT| is preferably 1 N/mm to 10 N/mm or less, and can be, for example, 1 N/mm to 7 N/mm, 1 N/mm to 5 N/mm, or 1 N/mm to 3 N/mm. However, these are merely examples of |ΔT|.

|ΔT|可藉由調節膜狀接著劑的含有成分的種類或量等而進行調節。例如,可藉由調節膜狀接著劑中的常溫下為固形之成分、交聯劑等的種類或量等,而於廣泛之範圍內調節|ΔT|。於熱硬化性膜狀接著劑之情形時,可藉由調節後述之聚合物成分(a)、常溫下為固形之環氧樹脂(b1)、交聯劑(f)等的種類或量等,而於廣泛之範圍內調節|ΔT|。|ΔT| can be adjusted by adjusting the types and amounts of the film adhesive's components. For example, |ΔT| can be adjusted over a wide range by adjusting the types and amounts of components solid at room temperature and crosslinking agents in the film adhesive. In the case of thermosetting film adhesives, |ΔT| can be adjusted over a wide range by adjusting the types and amounts of the polymer component (a), the room-temperature solid epoxy resin (b1), the crosslinking agent (f), and other components described below.

圖3係以示意方式表示本實施形態的膜狀接著劑的一例之剖視圖。 此處所示之膜狀接著劑13於該膜狀接著劑13的一面(本說明書中,有時稱為「第1面」)13a上具備第1剝離膜151,於與前述第1面13a為相反側的另一面(本說明書中,有時稱為「第2面」)13b上具備第2剝離膜152。 此種膜狀接著劑13例如適於以捲狀進行保管。Figure 3 schematically illustrates a cross-sectional view of an example of a film-like adhesive according to this embodiment. The film-like adhesive 13 shown here comprises a first release film 151 on one surface 13a (sometimes referred to herein as the "first surface"), and a second release film 152 on the other surface 13b (sometimes referred to herein as the "second surface"), opposite to the first surface 13a. This film-like adhesive 13 is preferably stored, for example, in a roll.

使用膜狀接著劑13或與膜狀接著劑13相同組成之膜狀接著劑所製作之第1試片的D0 為15mm以下。 使用膜狀接著劑13或與膜狀接著劑13相同組成之膜狀接著劑所製作之第1試片的|ΔT|較佳為10N/mm以下。 使用膜狀接著劑13或與膜狀接著劑13相同組成之膜狀接著劑所製作之第2試片中的前述硬化物的接著力較佳為100N/2mm□以上。The D0 of the first test piece produced using film adhesive 13 or a film adhesive having the same composition as film adhesive 13 is preferably 15 mm or less. The |ΔT| of the first test piece produced using film adhesive 13 or a film adhesive having the same composition as film adhesive 13 is preferably 10 N/mm or less. The adhesive force of the cured product in the second test piece produced using film adhesive 13 or a film adhesive having the same composition as film adhesive 13 is preferably 100 N/2 mm or greater.

第1剝離膜151及第2剝離膜152均可為公知的剝離膜。第1剝離膜151及第2剝離膜152可相互相同,亦可例如自膜狀接著劑13剝離時所需之剝離力相互不同等相互不同者。The first peeling film 151 and the second peeling film 152 can be known peeling films. The first peeling film 151 and the second peeling film 152 can be the same or different from each other, for example, in that the peeling force required for peeling from the film adhesive 13 is different.

圖3所示之膜狀接著劑13中,移除第1剝離膜151及第2剝離膜152之全部剝離膜所產生之一露出面成為對半導體晶圓之貼附面,另一露出面成為對基板之貼附面(接著面)。例如,於前述第1面13a為對半導體晶圓之貼附面之情形時,前述第2面13b成為對基板之貼附面。In the film adhesive 13 shown in FIG3 , one exposed surface, resulting from the removal of the first release film 151 and the second release film 152, becomes the surface for attaching to the semiconductor wafer, while the other exposed surface becomes the surface for attaching to the substrate (bonding surface). For example, if the first surface 13a is the surface for attaching to the semiconductor wafer, the second surface 13b becomes the surface for attaching to the substrate.

圖3中表示剝離膜設置於膜狀接著劑13的雙面(第1面13a、第2面13b)之示例,但剝離膜可僅設置於膜狀接著劑13的任一面,亦即可僅設置於第1面13a或僅設置於第2面13b。FIG3 shows an example in which the release film is provided on both surfaces (the first surface 13a and the second surface 13b) of the film adhesive 13, but the release film may be provided on only one surface of the film adhesive 13, that is, only on the first surface 13a or only on the second surface 13b.

本實施形態的膜狀接著劑可由1層(單層)所構成,亦可由2層以上之多層所構成,於由多層所構成之情形時,這些多層相互可相同亦可不同,這些多層的組合並無特別限定。The film adhesive of this embodiment may be composed of a single layer (monolayer) or multiple layers of two or more. In the case of multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.

此外,本說明書中,並不限於膜狀接著劑之情形,所謂「多層相互可相同亦可不同」,意指「可全部層相同,亦可全部層皆不同,還可僅一部分層相同」,進而,所謂「多層相互不同」,意指「各層的構成材料及厚度的至少一者相互不同」。In addition, in this specification, the phrase "multiple layers may be the same or different from each other" is not limited to film adhesives. It means "all layers may be the same, all layers may be different, or only some layers may be the same." Furthermore, the phrase "multiple layers may be different from each other" means "at least one of the constituent material and thickness of each layer may be different from each other."

前述膜狀接著劑的厚度並無特別限定,較佳為2μm至100μm,更佳為2μm至70μm,例如亦可為2μm至40μm。藉由膜狀接著劑的厚度為前述下限值以上,使得膜狀接著劑的接著力變得更高。於膜狀接著劑的厚度為前述上限值以下之情形時,膜狀接著劑的製造適性更高,例如以所需厚度塗敷後述之接著劑組成物時的適性更高等。 此處,所謂「膜狀接著劑的厚度」,意指膜狀接著劑整體的厚度,例如所謂由多層所構成之膜狀接著劑的厚度,意指構成膜狀接著劑之全部層的合計厚度。The thickness of the aforementioned film adhesive is not particularly limited, and is preferably 2μm to 100μm, more preferably 2μm to 70μm, and for example, may also be 2μm to 40μm. By having the thickness of the film adhesive be above the aforementioned lower limit, the bonding strength of the film adhesive becomes higher. When the thickness of the film adhesive is below the aforementioned upper limit, the manufacturing suitability of the film adhesive is higher, for example, the suitability when applying the adhesive composition described later to the desired thickness is higher. Here, the so-called "thickness of the film adhesive" means the thickness of the entire film adhesive, for example, the thickness of a film adhesive composed of multiple layers means the total thickness of all layers constituting the film adhesive.

前述膜狀接著劑可使用含有前述膜狀接著劑的構成材料之接著劑組成物而形成。例如,於膜狀接著劑之形成對象面塗敷接著劑組成物,視需要使之乾燥,藉此能夠於目標部位形成膜狀接著劑。熱硬化性膜狀接著劑可使用熱硬化性接著劑組成物而形成,能量線硬化性膜狀接著劑可使用能量線硬化性接著劑組成物而形成。 接著劑組成物中的常溫下不會氣化的成分彼此的含量之比率通常與膜狀接著劑中的前述成分彼此的含量之比率相同。The aforementioned film-like adhesive can be formed using an adhesive composition containing the constituent materials of the aforementioned film-like adhesive. For example, the adhesive composition is applied to the surface to be formed with the film-like adhesive and dried as needed to form the film-like adhesive at the target location. A thermosetting film-like adhesive can be formed using a thermosetting adhesive composition, and an energy-beam-curing film-like adhesive can be formed using an energy-beam-curing adhesive composition. The ratio of the components that do not vaporize at room temperature in the adhesive composition is generally the same as the ratio of the aforementioned components in the film-like adhesive.

利用公知的方法塗敷接著劑組成物即可,例如可列舉使用以下各種塗佈機之方法:氣刀塗佈機、刮刀塗佈機、棒式塗佈機、凹版塗佈機、輥式塗佈機、輥刀塗佈機、簾幕式塗佈機、模具塗佈機、刀式塗佈機、網版塗佈機、Meyer棒式塗佈機、輕觸式塗佈機等。The adhesive composition may be applied using a known method, for example, using the following coating machines: air knife coater, doctor blade coater, rod coater, gravure coater, roll coater, knife-roll coater, curtain coater, die coater, knife coater, screen coater, Meyer rod coater, touch coater, etc.

接著劑組成物的乾燥條件並無特別限定,於接著劑組成物含有後述溶媒之情形時,較佳為進行加熱乾燥。含有溶媒之接著劑組成物例如較佳為於70℃至130℃且10秒至5分鐘之條件下進行乾燥。 以下,對膜狀接著劑及接著劑組成物的含有成分詳細地進行說明。The drying conditions for the adhesive composition are not particularly limited. However, when the adhesive composition contains a solvent, as described below, heat drying is preferred. Adhesive compositions containing a solvent are preferably dried at, for example, 70°C to 130°C for 10 seconds to 5 minutes. The following describes film-forming adhesives and the ingredients of the adhesive composition in detail.

[熱硬化性接著劑組成物] 作為熱硬化性接著劑組成物,例如可列舉含有聚合物成分(a)及熱硬化性成分(b)之組成物(本說明書中,有時簡稱為「組成物(III-1)」)。以下,對各成分進行說明。[Thermosetting Adhesive Composition] Examples of thermosetting adhesive compositions include a composition containing a polymer component (a) and a thermosetting component (b) (occasionally referred to as "composition (III-1)" in this specification). Each component is described below.

[聚合物成分(a)] 聚合物成分(a)係用以對膜狀接著劑賦予造膜性及可撓性等之聚合物化合物。聚合物成分(a)具有熱塑性,不具有熱硬化性。此外,本說明書中,聚合物化合物中亦包括縮聚反應之產物。[Polymer Component (a)] Polymer Component (a) is a polymer compound used to impart film-forming properties and flexibility to the film-forming adhesive. Polymer Component (a) is thermoplastic and not thermosetting. In this specification, the term "polymer compound" also includes products of polycondensation reactions.

組成物(III-1)及膜狀接著劑所含有之聚合物成分(a)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些聚合物成分(a)的組合及比率可任意選擇。The polymer component (a) contained in the composition (III-1) and the film-like adhesive may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these polymer components (a) can be arbitrarily selected.

作為聚合物成分(a),例如可列舉丙烯酸樹脂、胺基甲酸酯樹脂、苯氧基樹脂、聚矽氧樹脂、飽和聚酯樹脂等。 這些之中,聚合物成分(a)較佳為丙烯酸樹脂。Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins. Among these, the polymer component (a) is preferably an acrylic resin.

作為聚合物成分(a)中的前述丙烯酸樹脂,可列舉公知的丙烯酸聚合物。 丙烯酸樹脂的重量平均分子量(Mw)較佳為10000至2000000,更佳為100000至1500000,例如亦可為500000至1000000。藉由丙烯酸樹脂的重量平均分子量為此種範圍內,容易將膜狀接著劑與被接著體之間的接著力調節為較佳的範圍。 另一方面,藉由丙烯酸樹脂的重量平均分子量為前述下限值以上,使得膜狀接著劑的形狀穩定性(保管時的經時穩定性)提高。另外,藉由丙烯酸樹脂的重量平均分子量為前述上限值以下,使得膜狀接著劑變得容易追隨於被接著體的凹凸面,可進一步抑制於被接著體與膜狀接著劑之間產生空隙(viod)等。The acrylic resin in polymer component (a) may be any known acrylic polymer. The weight-average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000, and may be, for example, 500,000 to 1,000,000. When the weight-average molecular weight of the acrylic resin is within this range, the adhesion between the film-forming adhesive and the adherend can be easily adjusted to a preferred range. In addition, when the weight-average molecular weight of the acrylic resin is above the aforementioned lower limit, the shape stability of the film-forming adhesive (temporal stability during storage) is improved. Furthermore, when the weight average molecular weight of the acrylic resin is below the aforementioned upper limit, the film-like adhesive can easily follow the uneven surface of the adherend, thereby further suppressing the generation of voids between the adherend and the film-like adhesive.

本說明書中,所謂「重量平均分子量」,只要無特別說明,則係指藉由凝膠滲透層析(GPC;Gel Permeation Chromatography)法所測定之聚苯乙烯換算值。Unless otherwise specified, the term "weight average molecular weight" in this specification refers to the polystyrene equivalent value measured by gel permeation chromatography (GPC).

丙烯酸樹脂的玻璃轉移溫度(Tg)較佳為-60℃至70℃,更佳為-45℃至50℃,例如亦可為-35℃至30℃。藉由丙烯酸樹脂的Tg為前述下限值以上,使得膜狀接著劑與被接著體之間的接著力得到抑制,於拾取時,具膜狀接著劑之半導體晶片自後述之支撐片之扯離變得更容易。藉由丙烯酸樹脂的Tg為前述上限值以下,使得膜狀接著劑與半導體晶片之間的接著力提高。The glass transition temperature (Tg) of the acrylic resin is preferably -60°C to 70°C, more preferably -45°C to 50°C, and may also be -35°C to 30°C. When the Tg of the acrylic resin is above the lower limit, the adhesion between the film adhesive and the adherend is suppressed, making it easier to remove the semiconductor chip with the film adhesive from the support sheet described below during pickup. When the Tg of the acrylic resin is below the upper limit, the adhesion between the film adhesive and the semiconductor chip is improved.

於丙烯酸樹脂具有2種以上之構成單元之情形時,該丙烯酸樹脂的玻璃轉移溫度(Tg)可使用Fox公式而算出。作為此時所使用之衍生出前述構成單元之單體的Tg,可使用高分子資料・手冊或黏著手冊中所記載之值。When an acrylic resin has two or more structural units, the glass transition temperature (Tg) of the acrylic resin can be calculated using the Fox equation. The Tg of the monomer from which the structural units are derived can be the value listed in polymer data manuals or adhesive manuals.

作為構成丙烯酸樹脂之前述(甲基)丙烯酸酯,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯((甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯((甲基)丙烯酸肉豆蔻酯)、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯((甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯((甲基)丙烯酸硬脂酯)等構成烷基酯之烷基為碳數為1至18之鏈狀結構之(甲基)丙烯酸烷基酯;(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯等(甲基)丙烯酸環烷基酯;(甲基)丙烯酸苄酯等(甲基)丙烯酸芳烷基酯;(甲基)丙烯酸二環戊烯基酯等(甲基)丙烯酸環烯基酯;(甲基)丙烯酸二環戊烯氧基乙酯等(甲基)丙烯酸環烯氧基烷基酯;(甲基)丙烯醯亞胺;(甲基)丙烯酸縮水甘油酯等含縮水甘油基之(甲基)丙烯酸酯;(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等含羥基之(甲基)丙烯酸酯;(甲基)丙烯酸N-甲基胺基乙酯等含取代胺基之(甲基)丙烯酸酯等。此處,所謂「取代胺基」,意指具有胺基之1個或2個氫原子由氫原子以外的基取代之結構之基。Examples of the aforementioned (meth)acrylates constituting the acrylic resin include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, and (meth)acrylate. ) octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate), heptadecyl (meth)acrylate, (Meth)acrylates whose alkyl group is a chain structure with 1 to 18 carbon atoms, such as stearyl (meth)acrylate; (meth)acrylate cycloalkyl esters such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate; (meth)acrylate aralkyl esters such as benzyl (meth)acrylate; (meth)acrylate cycloalkyl esters such as dicyclopentenyl (meth)acrylate; (meth)acrylate cycloalkyl esters such as dicyclopentenyl (meth)acrylate; (meth)acrylate cycloalkyl esters such as dicyclopentenyloxyethyl (meth)acrylate; (meth)acrylate Imides; (meth)acrylates containing a glycidyl group, such as glycidyl (meth)acrylate; (meth)acrylates containing a hydroxyl group, such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; (meth)acrylates containing a substituted amino group, such as N-methylaminoethyl (meth)acrylate. Here, the term "substituted amino group" refers to a group having a structure in which one or two hydrogen atoms of an amino group are replaced by a group other than hydrogen atoms.

本說明書中,「(甲基)丙烯酸」的概念包括「丙烯酸」及「甲基丙烯酸」之兩者。關於與(甲基)丙烯酸類似的用語亦相同。In this specification, the concept of "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid." The same applies to terms similar to (meth)acrylic acid.

丙烯酸樹脂例如亦可為除了前述(甲基)丙烯酸酯以外,進而使選自(甲基)丙烯酸、衣康酸、乙酸乙烯酯、丙烯腈、苯乙烯及N-羥甲基丙烯醯胺等中的1種或2種以上之單體共聚而獲得之樹脂。The acrylic resin may be, for example, a resin obtained by copolymerizing, in addition to the aforementioned (meth)acrylate, one or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxymethacrylamide.

構成丙烯酸樹脂之單體可僅為1種,亦可為2種以上,於為2種以上之情形時,這些單體的組合及比率可任意選擇。The monomers constituting the acrylic resin may be one or two or more. In the case of two or more monomers, the combination and ratio of these monomers can be arbitrarily selected.

丙烯酸樹脂中,除具有上述之羥基以外,亦可具有乙烯基、(甲基)丙烯醯基、胺基、羧基、異氰酸酯基等可與其他化合物鍵結之官能基。丙烯酸樹脂中之以羥基為代表之這些官能基可經由後述之交聯劑(f)而與其他化合物鍵結,亦可不經由交聯劑(f)而與其他化合物直接鍵結。藉由丙烯酸樹脂利用前述官能基與其他化合物鍵結,使得膜狀接著劑的凝聚力提高,膜狀接著劑的物理穩定性提高。In addition to the aforementioned hydroxyl groups, acrylic resins may also have functional groups such as vinyl, (meth)acryl, amino, carboxyl, and isocyanate groups that can bond with other compounds. These functional groups, represented by hydroxyl groups, can bond with other compounds via a crosslinking agent (f) described below, or they can bond directly without a crosslinking agent (f). By utilizing these functional groups to bond with other compounds, the cohesive strength of the film-forming adhesive is enhanced, improving the physical stability of the film-forming adhesive.

本發明中,作為聚合物成分(a),可不使用丙烯酸樹脂而單獨使用丙烯酸樹脂以外的熱塑性樹脂(以下,有時僅簡稱為「熱塑性樹脂」),亦可與丙烯酸樹脂併用。藉由使用前述熱塑性樹脂,於拾取時,具膜狀接著劑之半導體晶片自後述之支撐片之扯離變得更容易,或膜狀接著劑變得容易追隨於被接著體的凹凸面,有時可進一步抑制於被接著體與膜狀接著劑之間產生空隙等。In the present invention, a thermoplastic resin other than an acrylic resin (hereinafter sometimes simply referred to as a "thermoplastic resin") may be used as the polymer component (a) in place of an acrylic resin, or in combination with an acrylic resin. The use of such a thermoplastic resin facilitates the removal of a semiconductor chip with a film-like adhesive from a support sheet (described later) during pickup, and the film-like adhesive can more easily follow the uneven surface of the adherend, thereby further suppressing the formation of voids between the adherend and the film-like adhesive.

前述熱塑性樹脂的重量平均分子量較佳為1000至100000,更佳為3000至80000。The weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

前述熱塑性樹脂的玻璃轉移溫度(Tg)較佳為-30℃至150℃,更佳為-20℃至120℃。The glass transition temperature (Tg) of the thermoplastic resin is preferably -30°C to 150°C, more preferably -20°C to 120°C.

作為前述熱塑性樹脂,例如可列舉:聚酯樹脂、胺基甲酸酯樹脂、苯氧基樹脂、聚丁烯、聚丁二烯、聚苯乙烯等。Examples of the thermoplastic resin include polyester resins, urethane resins, phenoxy resins, polybutene, polybutadiene, and polystyrene.

組成物(III-1)及膜狀接著劑所含有之前述熱塑性樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些熱塑性樹脂的組合及比率可任意選擇。The composition (III-1) and the film-like adhesive may contain only one type of the aforementioned thermoplastic resin or two or more types. In the case of two or more types, the combination and ratio of these thermoplastic resins can be arbitrarily selected.

組成物(III-1)中,無論聚合物成分(a)的種類如何,聚合物成分(a)的含量相對於溶媒以外的全部成分的總含量之比例(亦即,膜狀接著劑中的聚合物成分(a)的含量相對於膜狀接著劑的總質量之比例)均較佳為5質量%至40質量%,更佳為6質量%至30質量%,例如亦可為7質量%至25質量%等。膜狀接著劑的結構進一步穩定化。藉由前述比例為前述上限值以下,能夠廣泛地調節由使用聚合物成分(a)所帶來之效果與由使用聚合物成分(a)以外的成分所帶來之效果之平衡。In composition (III-1), regardless of the type of polymer component (a), the ratio of the polymer component (a) content to the total content of all components other than the solvent (i.e., the ratio of the polymer component (a) content in the film-forming adhesive to the total mass of the film-forming adhesive) is preferably 5 to 40 mass%, more preferably 6 to 30 mass%, and for example, 7 to 25 mass%. The structure of the film-forming adhesive is further stabilized. By keeping the ratio below the upper limit, the balance between the effects of using the polymer component (a) and the effects of using components other than the polymer component (a) can be widely adjusted.

組成物(III-1)及膜狀接著劑中,丙烯酸樹脂的含量相對於聚合物成分(a)的總含量之比例較佳為25質量%至100質量%,例如可為50質量%至100質量%、70質量%至100質量%、及90質量%至100質量%之任一種。藉由前述含量之比例為前述下限值以上,膜狀接著劑的保存穩定性變得更高。In composition (III-1) and the film-like adhesive, the acrylic resin content relative to the total content of polymer component (a) is preferably 25% by mass to 100% by mass, and may be, for example, 50% by mass to 100% by mass, 70% by mass to 100% by mass, or 90% by mass to 100% by mass. When the content is above the lower limit, the storage stability of the film-like adhesive is enhanced.

藉由調節聚合物成分(a)的重量平均分子量、及膜狀接著劑中的聚合物成分(a)的含量,能夠更容易地調節D0 及|ΔT|。例如,藉由使用重量平均分子量大之聚合物成分(a)、增大重量平均分子量大之聚合物成分(a)於膜狀接著劑中的含量,能夠更容易地減小D0 及|ΔT|。By adjusting the weight-average molecular weight of the polymer component (a) and the content of the polymer component (a) in the film adhesive, D0 and |ΔT| can be more easily adjusted. For example, by using a polymer component (a) with a high weight-average molecular weight or increasing the content of the polymer component (a) with a high weight-average molecular weight in the film adhesive, D0 and |ΔT| can be more easily reduced.

[熱硬化性成分(b)] 熱硬化性成分(b)係具有熱硬化性,且用以使膜狀接著劑熱硬化之成分。 接著劑組成物及膜狀接著劑所含有之熱硬化性成分(b)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些熱硬化性成分(b)的組合及比率可任意選擇。[Thermosetting Component (b)] Thermosetting component (b) is a thermosetting component used to thermally cure the film-forming adhesive. The adhesive composition and film-forming adhesive may contain a single thermosetting component (b) or two or more. When two or more thermosetting components (b) are used, the combination and ratio of these thermosetting components (b) can be arbitrarily selected.

作為熱硬化性成分(b),例如可列舉:環氧系熱硬化性樹脂、聚醯亞胺樹脂、不飽和聚酯樹脂等。 這些之中,熱硬化性成分(b)較佳為環氧系熱硬化性樹脂。Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

・環氧系熱硬化性樹脂 環氧系熱硬化性樹脂由環氧樹脂(b1)及熱硬化劑(b2)所構成。接著劑組成物及膜狀接著劑所含有之環氧系熱硬化性樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些環氧系熱硬化性樹脂的組合及比率可任意選擇。Epoxy-based thermosetting resins: Epoxy-based thermosetting resins are composed of an epoxy resin (b1) and a thermosetting agent (b2). The adhesive composition and film-like adhesive may contain only one type of epoxy-based thermosetting resin or two or more types. In the case of two or more types, the combination and ratio of these epoxy-based thermosetting resins can be arbitrarily selected.

[環氧樹脂(b1)] 作為環氧樹脂(b1),可列舉公知的環氧樹脂,例如可列舉:多官能系環氧樹脂、聯苯化合物、雙酚A二縮水甘油醚及其氫化物、鄰甲酚酚醛清漆型環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、伸苯基骨格型環氧樹脂等2官能以上之環氧化合物。[Epoxy resin (b1)] Examples of the epoxy resin (b1) include known epoxy resins, such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, o-cresol novolac epoxy resins, dicyclopentadiene epoxy resins, biphenyl epoxy resins, bisphenol A epoxy resins, bisphenol F epoxy resins, phenyl skeleton epoxy resins, and other epoxy compounds having two or more functional groups.

環氧樹脂(b1)亦可為具有不飽和烴基之環氧樹脂。具有不飽和烴基之環氧樹脂相較於不具有不飽和烴基之環氧樹脂,相對於丙烯酸樹脂之相容性較高。因此,藉由使用具有不飽和烴基之環氧樹脂(b1),使用膜狀接著劑所獲得之封裝體的可靠性提高。The epoxy resin (b1) may also be an epoxy resin having an unsaturated hydrocarbon group. Epoxy resins having unsaturated hydrocarbon groups have a higher compatibility with acrylic resins than epoxy resins without unsaturated hydrocarbon groups. Therefore, by using the epoxy resin (b1) having an unsaturated hydrocarbon group, the reliability of the package obtained using the film adhesive is improved.

作為具有不飽和烴基之環氧樹脂,例如可列舉具有多官能系環氧樹脂的一部分環氧基變換為具有不飽和烴基之基之結構之化合物。此種化合物例如藉由使(甲基)丙烯酸或其衍生物與環氧基進行加成反應而獲得。Examples of epoxy resins having unsaturated hydrocarbon groups include compounds having a structure in which a portion of the epoxy groups in a polyfunctional epoxy resin has been converted to groups having unsaturated hydrocarbon groups. Such compounds are obtained, for example, by reacting (meth)acrylic acid or a derivative thereof with an epoxy group.

本說明書中,所謂「衍生物」,只要無特別說明,則意指具有原本的化合物的1個以上之基由該基以外的基(取代基)取代而成之結構之化合物。此處,所謂「基」,不僅包含多個原子鍵結而構成之原子團,亦包含1個原子。In this specification, the term "derivative," unless otherwise specified, refers to a compound having a structure in which one or more groups of the original compound are replaced by groups other than the group (substituent). Here, "group" includes not only atomic groups composed of multiple atoms but also single atoms.

另外,作為具有不飽和烴基之環氧樹脂,例如可列舉於構成環氧樹脂之芳香環等直接鍵結有具有不飽和烴基之基之化合物等。不飽和烴基係具有聚合性之不飽和基,作為該不飽和烴基的具體例,可列舉次乙基(乙烯基)、2-丙烯基(烯丙基)、(甲基)丙烯醯基、(甲基)丙烯醯胺基等,較佳為丙烯醯基。Examples of epoxy resins having unsaturated hydrocarbon groups include compounds in which an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like constituting the epoxy resin. Unsaturated hydrocarbon groups are polymerizable unsaturated groups. Specific examples of such unsaturated hydrocarbon groups include ethylene (vinyl), 2-propenyl (allyl), (meth)acryloyl, and (meth)acrylamido groups, with acryl being preferred.

環氧樹脂(b1)的數目平均分子量並無特別限定,就膜狀接著劑的硬化性、以及膜狀接著劑的硬化物的強度及耐熱性之方面而言,較佳為300至30000,更佳為400至10000,尤佳為500至3000。 環氧樹脂(b1)的環氧當量較佳為100g/eq至1000g/eq,例如可為150g/eq至650g/eq、及150g/eq至300g/eq之任一種,亦可為450g/eq至1000g/eq、及700g/eq至1000g/eq之任一種。The number average molecular weight of the epoxy resin (b1) is not particularly limited. From the perspective of the curability of the film adhesive and the strength and heat resistance of the cured product of the film adhesive, it is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000. The epoxy equivalent weight of the epoxy resin (b1) is preferably 100 to 1,000 g/eq, and can be, for example, 150 to 650 g/eq, 150 to 300 g/eq, or 450 to 1,000 g/eq, or 700 to 1,000 g/eq.

作為環氧樹脂(b1),選擇常溫下為固形之環氧樹脂,並調節該環氧樹脂於膜狀接著劑中的含量,藉此能夠更容易地調節D0 及|ΔT|。例如,藉由增大常溫下為固形之環氧樹脂(b1)於膜狀接著劑中的含量,能夠更容易地減小D0 及|ΔT|。By selecting an epoxy resin that is solid at room temperature as the epoxy resin (b1) and adjusting the content of the epoxy resin in the film adhesive, D0 and |ΔT| can be more easily adjusted. For example, by increasing the content of the epoxy resin (b1) that is solid at room temperature in the film adhesive, D0 and |ΔT| can be more easily reduced.

組成物(III-1)及膜狀接著劑所含有之環氧樹脂(b1)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些環氧樹脂(b1)的組合及比率可任意選擇。The epoxy resin (b1) contained in the composition (III-1) and the film adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these epoxy resins (b1) can be arbitrarily selected.

[熱硬化劑(b2)] 熱硬化劑(b2)係針對環氧樹脂(b1)之硬化劑。 作為熱硬化劑(b2),例如可列舉於1分子中具有2個以上之可與環氧基反應之官能基之化合物。作為前述官能基,例如可列舉酚性羥基、醇性羥基、胺基、羧基、酸基經酐化而成之基等,較佳為酚性羥基、胺基、或酸基經酐化而成之基,更佳為酚性羥基或胺基。[Thermohardener (b2)] Thermohardener (b2) is a hardener for epoxy resin (b1). Examples of thermohardener (b2) include compounds having two or more functional groups reactive with epoxy groups in one molecule. Examples of these functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydriding acid groups. Phenolic hydroxyl groups, amino groups, or groups formed by anhydriding acid groups are preferred, and phenolic hydroxyl groups or amino groups are even more preferred.

熱硬化劑(b2)中,作為具有酚性羥基之酚系硬化劑,例如可列舉:多官能酚樹脂、聯苯酚、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等。 熱硬化劑(b2)中,作為具有胺基之胺系硬化劑,例如可列舉雙氰胺(DICY;dicyandiamide)等。Among the heat curing agents (b2), examples of phenolic curing agents having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenol, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins. Among the heat curing agents (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY).

熱硬化劑(b2)亦可具有不飽和烴基。 作為具有不飽和烴基之熱硬化劑(b2),例如可列舉:酚樹脂的一部分羥基由具有不飽和烴基之基取代而成之化合物、於酚樹脂的芳香環直接鍵結具有不飽和烴基之基而成之化合物等。 熱硬化劑(b2)中的前述不飽和烴基與上述之具有不飽和烴基之環氧樹脂中的不飽和烴基相同。Thermosetting agent (b2) may also contain unsaturated alkyl groups. Examples of thermosetting agents (b2) containing unsaturated alkyl groups include compounds in which a portion of the hydroxyl groups of a phenolic resin are substituted with groups containing unsaturated alkyl groups, and compounds in which a group containing unsaturated alkyl groups is directly bonded to the aromatic ring of a phenolic resin. The unsaturated alkyl groups in thermosetting agent (b2) are the same as those in the aforementioned epoxy resin containing unsaturated alkyl groups.

於使用酚系硬化劑作為熱硬化劑(b2)之情形時,就容易調節膜狀接著劑的接著力之方面而言,熱硬化劑(b2)以軟化點或玻璃轉移溫度高為佳。When a phenolic curing agent is used as the thermosetting agent (b2), it is preferable that the thermosetting agent (b2) has a high softening point or glass transition temperature in order to easily adjust the adhesive strength of the film adhesive.

熱硬化劑(b2)中,例如多官能酚樹脂、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、芳烷基型酚樹脂等樹脂成分的數目平均分子量較佳為300至30000,更佳為400至10000,尤佳為500至3000。 熱硬化劑(b2)中,例如聯苯酚、雙氰胺等非樹脂成分的分子量並無特別限定,例如較佳為60至500。In the thermosetting agent (b2), the number average molecular weight of the resin component, such as a polyfunctional phenol resin, a novolac-type phenol resin, a dicyclopentadiene-type phenol resin, or an aralkyl-type phenol resin, is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000. The molecular weight of the non-resin component, such as diphenol and dicyandiamide, in the thermosetting agent (b2) is not particularly limited, but is preferably 60 to 500, for example.

組成物(III-1)及膜狀接著劑所含有之熱硬化劑(b2)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些熱硬化劑(b2)的組合及比率可任意選擇。The composition (III-1) and the film adhesive may contain only one type of thermosetting agent (b2) or two or more types. In the case of two or more types, the combination and ratio of these thermosetting agents (b2) can be arbitrarily selected.

組成物(III-1)及膜狀接著劑中,熱硬化劑(b2)的含量相對於環氧樹脂(b1)的含量100質量份,較佳為1質量份至60質量份,例如可為1質量份至35質量份、及1質量份至10質量份之任一種,亦可為20質量份至60質量份、及40質量份至60質量份之任一種。藉由熱硬化劑(b2)的前述含量為前述下限值以上,膜狀接著劑更容易進行硬化。藉由熱硬化劑(b2)的前述含量為前述上限值以下,使得膜狀接著劑的吸濕率降低,使用膜狀接著劑所獲得之封裝體的可靠性進一步提高。In the composition (III-1) and the film-like adhesive, the content of the thermosetting agent (b2) is preferably 1 to 60 parts by mass relative to 100 parts by mass of the epoxy resin (b1). For example, it can be any one of 1 to 35 parts by mass, 1 to 10 parts by mass, or 20 to 60 parts by mass, or 40 to 60 parts by mass. By making the content of the thermosetting agent (b2) greater than or equal to the lower limit, the film-like adhesive is easier to cure. By making the content of the thermosetting agent (b2) less than or equal to the upper limit, the moisture absorption rate of the film-like adhesive is reduced, and the reliability of the package obtained using the film-like adhesive is further improved.

組成物(III-1)及膜狀接著劑中,熱硬化性成分(b)的含量(例如,環氧樹脂(b1)及熱硬化劑(b2)的總含量)相對於聚合物成分(a)的含量100質量份,較佳為20質量份至1000質量份,更佳為20質量份至700質量份,例如可為50質量份至500質量份、100質量份至450質量份、及200質量份至400質量份之任一種。藉由熱硬化性成分(b)的前述含量為此種範圍,更容易調節膜狀接著劑與後述之支撐片之間的接著力。另外,藉由熱硬化性成分(b)的前述含量為此種範圍,能夠更容易地調節D0 及|ΔT|。In composition (III-1) and the film-like adhesive, the content of the thermosetting component (b) (e.g., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) relative to 100 parts by mass of the polymer component (a) is preferably 20 to 1000 parts by mass, more preferably 20 to 700 parts by mass, and can be, for example, 50 to 500 parts by mass, 100 to 450 parts by mass, and 200 to 400 parts by mass. By having the content of the thermosetting component (b) within this range, it is easier to adjust the bonding strength between the film-like adhesive and the supporting sheet described below. Furthermore, by having the content of the thermosetting component (b) within this range, it is easier to adjust D0 and |ΔT|.

組成物(III-1)及膜狀接著劑中,為了改良膜狀接著劑的各種物性,除了含有聚合物成分(a)及熱硬化性成分(b)以外,亦可進而視需要含有不相當於這些成分之其他成分。 作為組成物(III-1)及膜狀接著劑所含有之其他成分,例如可列舉:硬化促進劑(c)、填充材料(d)、偶合劑(e)、交聯劑(f)、能量線硬化性樹脂(g)、光聚合起始劑(h)、著色劑(i)、通用添加劑(j)等。In order to improve various physical properties of the film adhesive, composition (III-1) and the film adhesive may contain, in addition to the polymer component (a) and the thermosetting component (b), other components other than these components as needed. Examples of other components contained in composition (III-1) and the film adhesive include a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray-curable resin (g), a photopolymerization initiator (h), a colorant (i), and a general additive (j).

[硬化促進劑(c)] 硬化促進劑(c)係用以調節組成物(III-1)及膜狀接著劑的硬化速度之成分。 作為較佳的硬化促進劑(c),例如可列舉:三乙二胺、苄基二甲胺、三乙醇胺、二甲胺基乙醇、三(二甲胺基甲基)苯酚等三級胺;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑類(1個以上之氫原子由氫原子以外的基取代而成之咪唑);三丁基膦、二苯基膦、三苯基膦等有機膦類(1個以上之氫原子由有機基取代而成之膦);四苯基硼酸四苯基鏻、四苯基硼酸三苯基膦等四苯基硼鹽;以前述咪唑類作為客體化合物之包接化合物等。[Hardening accelerator (c)] Hardening accelerator (c) is a component used to adjust the hardening speed of composition (III-1) and film adhesive. Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; tetraphenylborates such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate; and inclusion compounds in which the aforementioned imidazoles serve as guest compounds.

組成物(III-1)及膜狀接著劑所含有之硬化促進劑(c)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些硬化促進劑(c)的組合及比率可任意選擇。The composition (III-1) and the film-like adhesive may contain only one type of curing accelerator (c) or two or more types. In the case of two or more types, the combination and ratio of these curing accelerators (c) can be arbitrarily selected.

於使用硬化促進劑(c)之情形時,組成物(III-1)及膜狀接著劑中,硬化促進劑(c)的含量相對於熱硬化性成分(b)的含量100質量份,較佳為0.01質量份至5質量份,更佳為0.1質量份至3質量份。藉由硬化促進劑(c)的前述含量為前述下限值以上,能更顯著地獲得由使用硬化促進劑(c)所帶來之效果。藉由硬化促進劑(c)的含量為前述上限值以下,例如抑制高極性的硬化促進劑(c)於高溫、高濕度條件下在膜狀接著劑中朝膜狀接著劑與被接著體之接著界面側移動而偏析之效果變高,使用膜狀接著劑所獲得之封裝體的可靠性進一步提高。When a hardening accelerator (c) is used, the content of the hardening accelerator (c) in the composition (III-1) and the film-like adhesive is preferably 0.01 to 5 parts by mass, and more preferably 0.1 to 3 parts by mass, per 100 parts by mass of the thermosetting component (b). By ensuring that the content of the hardening accelerator (c) is at least the lower limit, the effect of using the hardening accelerator (c) can be more significantly achieved. By keeping the content of the hardening accelerator (c) below the aforementioned upper limit, the effect of suppressing the highly polar hardening accelerator (c) from migrating and segregating toward the interface between the film adhesive and the adherend under high temperature and high humidity conditions is enhanced, thereby further improving the reliability of the package obtained using the film adhesive.

[填充材料(d)] 膜狀接著劑藉由含有填充材料(d),容易調整該膜狀接著劑的熱膨脹係數,使該熱膨脹係數對於膜狀接著劑之貼附對象物而言最佳化,藉此,使用膜狀接著劑所獲得之封裝體的可靠性進一步提高。另外,藉由膜狀接著劑含有填充材料(d),亦能夠降低膜狀接著劑的硬化物的吸濕率,或提高散熱性。[Filler (d)] By including filler (d) in a film adhesive, the film adhesive's coefficient of thermal expansion can be easily adjusted, optimizing the coefficient of thermal expansion for the object to which the film adhesive is attached. This further improves the reliability of the package created using the film adhesive. Furthermore, the inclusion of filler (d) in the film adhesive can reduce the moisture absorption rate of the cured film adhesive and improve heat dissipation.

填充材料(d)可為有機填充材料及無機填充材料之任一種,較佳為無機填充材料。 作為較佳的無機填充材料,例如可列舉:二氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、鐵丹、碳化矽、氮化硼等之粉末;將這些無機填充材料球形化而成之珠粒;這些無機填充材料的表面改質品;這些無機填充材料的單晶纖維;玻璃纖維等。 這些之中,無機填充材料較佳為二氧化矽、氧化鋁或這些之表面改質品。Filler (d) can be either an organic filler or an inorganic filler, preferably an inorganic filler. Preferred inorganic fillers include powders of silica, alumina, talc, calcium carbonate, titanium dioxide, red iron, silicon carbide, boron nitride, etc.; spherical beads of these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; and glass fibers. Of these, silica, alumina, or surface-modified products of these are preferred inorganic fillers.

填充材料(d)的平均粒徑並無特別限定,較佳為10nm至5μm,例如可為10nm至800nm、10nm至600nm、20nm至300nm、及30nm至150nm之任一種。藉由填充材料(d)的平均粒徑為此種範圍,能充分地獲得由使用填充材料(d)所帶來之效果,並且膜狀接著劑的保存穩定性變得更高。The average particle size of the filler (d) is not particularly limited, but is preferably 10 nm to 5 μm. For example, it can be any of 10 nm to 800 nm, 10 nm to 600 nm, 20 nm to 300 nm, and 30 nm to 150 nm. By having the average particle size of the filler (d) within this range, the effects of using the filler (d) can be fully achieved, and the storage stability of the film adhesive can be further improved.

本說明書中,所謂「平均粒徑」,只要無特別說明,則意指藉由雷射繞射散射法所求出之粒度分佈曲線中的累計值50%時的粒徑(D50 )的值。In this specification, the term "average particle size" refers to the particle size at 50% of the cumulative value ( D50 ) in the particle size distribution curve determined by laser diffraction scattering, unless otherwise specified.

組成物(III-1)及膜狀接著劑所含有之填充材料(d)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些填充材料(d)的組合及比率可任意選擇。The filler (d) contained in the composition (III-1) and the film-like adhesive may be one type or two or more types. In the case of two or more types, the combination and ratio of these fillers (d) may be arbitrarily selected.

於使用填充材料(d)之情形時,組成物(III-1)中,填充材料(d)的含量相對於溶媒以外的全部成分的總含量之比例(亦即,膜狀接著劑中的填充材料(d)的含量相對於膜狀接著劑的總質量之比例)較佳為5質量%至60質量%,更佳為10質量%至45質量%,例如亦可為10質量%至20質量%。藉由填充材料(d)的含量為此種範圍,更容易調整上述熱膨脹係數。When filler (d) is used, the ratio of the filler (d) content to the total content of all components other than the solvent in composition (III-1) (i.e., the ratio of the filler (d) content in the film-like adhesive to the total mass of the film-like adhesive) is preferably 5% by mass to 60% by mass, more preferably 10% by mass to 45% by mass, and for example, 10% by mass to 20% by mass. By setting the filler (d) content within this range, the above-mentioned thermal expansion coefficient can be more easily adjusted.

[偶合劑(e)] 膜狀接著劑藉由含有偶合劑(e),來提高對被接著體之接著性及密接性。另外,藉由膜狀接著劑含有偶合劑(e),該膜狀接著劑的硬化物不損害耐熱性而耐水性提高。偶合劑(e)具有可與無機化合物或有機化合物反應之官能基。[Coupling Agent (e)] The film adhesive contains a coupling agent (e) to improve its adhesion and close contact with the substrate. Furthermore, the inclusion of the coupling agent (e) in the film adhesive improves the water resistance of the cured product without compromising heat resistance. The coupling agent (e) has a functional group that reacts with an inorganic or organic compound.

偶合劑(e)較佳為具有可與聚合物成分(a)、熱硬化性成分(b)等所具有之官能基反應之官能基之化合物,更佳為矽烷偶合劑。 作為較佳的前述矽烷偶合劑,例如可列舉:3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、3-縮水甘油氧基甲基二乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基甲基二乙氧基矽烷、3-(苯基胺基)丙基三甲氧基矽烷、3-苯胺基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽基丙基)四硫化物、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷、低聚物型或聚合物型有機矽氧烷等。The coupling agent (e) is preferably a compound having a functional group that can react with the functional groups of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent. Preferred examples of the aforementioned silane coupling agent include: 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2- 3-(Aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-butylpropyltrimethoxysilane, 3-butylpropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazole silane, oligomeric or polymeric organosiloxanes, etc.

組成物(III-1)及膜狀接著劑所含有之偶合劑(e)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些偶合劑(e)的組合及比率可任意選擇。The coupling agent (e) contained in the composition (III-1) and the film-like adhesive may be one type or two or more types. In the case of two or more types, the combination and ratio of these coupling agents (e) may be arbitrarily selected.

於使用偶合劑(e)之情形時,組成物(III-1)及膜狀接著劑中,偶合劑(e)的含量相對於聚合物成分(a)及熱硬化性成分(b)的總含量100質量份,較佳為0.03質量份至20質量份,更佳為0.05質量份至10質量份,尤佳為0.1質量份至5質量份。藉由偶合劑(e)的前述含量為前述下限值以上,能更顯著地獲得如下之由使用偶合劑(e)所帶來之效果:填充材料(d)於樹脂中的分散性提高、以及膜狀接著劑與被接著體之接著性提高等。藉由偶合劑(e)的前述含量為前述上限值以下,能進一步抑制產生逸氣。When a coupling agent (e) is used, the content of the coupling agent (e) in the composition (III-1) and the film-like adhesive is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and even more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). By ensuring that the coupling agent (e) content is above the lower limit, the following effects of using the coupling agent (e) can be more significantly achieved: improved dispersibility of the filler (d) in the resin and improved adhesion between the film-like adhesive and the adherend. By ensuring that the coupling agent (e) content is below the upper limit, outgassing can be further suppressed.

[交聯劑(f)] 於使用具有可與其他化合物鍵結之乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等官能基之上述丙烯酸樹脂等作為聚合物成分(a)之情形時,組成物(III-1)及膜狀接著劑亦可含有交聯劑(f),該交聯劑(f)用以使前述官能基與其他化合物鍵結而進行交聯。藉由使用交聯劑(f)進行交聯,能夠調節膜狀接著劑的起始接著力及凝聚力。 另外,藉由使用交聯劑(f),能夠更容易地調節D0 及|ΔT|。[Crosslinking Agent (f)] When using the aforementioned acrylic resins having functional groups such as vinyl, (meth)acryloyl, amino, hydroxyl, carboxyl, or isocyanate groups capable of bonding with other compounds as the polymer component (a), the composition (III-1) and the film-forming adhesive may also contain a crosslinking agent (f). This crosslinking agent (f) is used to crosslink the aforementioned functional groups by bonding with other compounds. By crosslinking with the crosslinking agent (f), the initial adhesion and cohesive strength of the film-forming adhesive can be adjusted. Furthermore, the use of the crosslinking agent (f) facilitates adjustment of D0 and |ΔT|.

作為交聯劑(f),例如可列舉:有機多元異氰酸酯化合物、有機多元亞胺化合物、金屬螯合物系交聯劑(具有金屬螯合物結構之交聯劑)、氮丙啶系交聯劑(具有氮丙啶基之交聯劑)等。Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridine group).

作為前述有機多元異氰酸酯化合物,例如可列舉:芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物及脂環族多元異氰酸酯化合物(以下,有時將這些化合物統一簡稱為「芳香族多元異氰酸酯化合物等」);前述芳香族多元異氰酸酯化合物等之三聚物、異氰脲酸酯物及加合物;使前述芳香族多元異氰酸酯化合物等與多元醇化合物反應而獲得之末端異氰酸酯胺基甲酸酯預聚物等。前述「加合物」意指前述芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物或脂環族多元異氰酸酯化合物與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷或蓖麻油等含低分子活性氫之化合物而成之反應物。作為前述加合物的示例,可列舉如後述之三羥甲基丙烷之甲苯二異氰酸酯三聚物加成物等。另外,所謂「末端異氰酸酯胺基甲酸酯預聚物」,意指具有胺基甲酸酯鍵並且於分子的末端部具有異氰酸酯基之預聚物。Examples of the aforementioned organic polyisocyanate compounds include aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, and cycloaliphatic polyisocyanate compounds (hereinafter, these compounds may be collectively referred to as "aromatic polyisocyanate compounds, etc."); trimers, isocyanurates, and adducts of the aforementioned aromatic polyisocyanate compounds, etc.; and isocyanate-terminated urethane prepolymers obtained by reacting the aforementioned aromatic polyisocyanate compounds, etc. with polyol compounds. The aforementioned "adducts" refer to the reaction products of the aforementioned aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, or cycloaliphatic polyisocyanate compounds with compounds containing low-molecular-weight active hydrogen, such as ethylene glycol, propylene glycol, neopentyl glycol, trihydroxymethylpropane, or castor oil. Examples of the adducts include the toluene diisocyanate trimer adduct of trihydroxymethylpropane described below. Furthermore, the term "isocyanate-terminated urethane prepolymer" refers to a prepolymer having a urethane bond and an isocyanate group at the terminal end of the molecule.

作為前述有機多元異氰酸酯化合物,更具體而言,例如可列舉:2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;1,3-苯二甲基二異氰酸酯;1,4-二甲苯二異氰酸酯;二苯基甲烷-4,4'-二異氰酸酯;二苯基甲烷-2,4'-二異氰酸酯;3-甲基二苯基甲烷二異氰酸酯;六亞甲基二異氰酸酯;異佛爾酮二異氰酸酯;二環己基甲烷-4,4'-二異氰酸酯;二環己基甲烷-2,4'-二異氰酸酯;於三羥甲基丙烷等多元醇的全部或一部分羥基,加成了甲苯二異氰酸酯、六亞甲基二異氰酸酯及苯二甲基二異氰酸酯中的任1種或2種以上而成之化合物;離胺酸二異氰酸酯等。More specifically, the organic polyisocyanate compounds include: 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-phenylenediisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate. diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; compounds formed by adding one or more of toluene diisocyanate, hexamethylene diisocyanate, and xylylenediisocyanate to all or part of the hydroxyl groups of a polyol such as trihydroxymethylpropane; lysine diisocyanate, etc.

作為前述有機多元亞胺化合物,例如可列舉:N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶甲醯胺)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、N,N'-甲苯-2,4-雙(1-氮丙啶甲醯胺)三伸乙基三聚氰胺等。Examples of the organic polyimide compound include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trihydroxymethylpropane-tris-β-aziridine propionate, tetrahydroxymethylmethane-tris-β-aziridine propionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide)triethylene melamine.

於使用有機多元異氰酸酯化合物作為交聯劑(f)之情形時,作為聚合物成分(a),較佳為使用含羥基之聚合物。於交聯劑(f)具有異氰酸酯基、聚合物成分(a)具有羥基之情形時,藉由交聯劑(f)與聚合物成分(a)之反應,能夠將交聯結構簡便地導入至膜狀接著劑。When an organic polyvalent isocyanate compound is used as the crosslinking agent (f), a hydroxyl-containing polymer is preferably used as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film-like adhesive through the reaction between the crosslinking agent (f) and the polymer component (a).

組成物(III-1)及膜狀接著劑所含有之交聯劑(f)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些交聯劑(f)的組合及比率可任意選擇。The composition (III-1) and the film-like adhesive may contain only one crosslinking agent (f) or two or more crosslinking agents (f). In the case of two or more crosslinking agents (f), the combination and ratio of these crosslinking agents (f) can be arbitrarily selected.

於使用交聯劑(f)之情形時,接著劑組成物中,交聯劑(f)的含量相對於聚合物成分(a)的含量100質量份,較佳為0.01質量份至20質量份,更佳為0.1質量份至10質量份,尤佳為0.3質量份至5質量份。藉由交聯劑(f)的前述含量為前述下限值以上,可更顯著地獲得由使用交聯劑(f)所帶來之效果。藉由交聯劑(f)的前述含量為前述上限值以下,可抑制交聯劑(f)之過量使用。另外,藉由交聯劑(f)的前述含量為此種範圍,能夠更容易地調節D0 及|ΔT|。例如,藉由增大交聯劑(f)的前述含量,能夠更容易地減小D0 及|ΔT|。When a crosslinking agent (f) is used, the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the polymer component (a). By having the crosslinking agent (f) content be greater than the lower limit, the effect of using the crosslinking agent (f) can be more significantly achieved. By having the crosslinking agent (f) content be less than the upper limit, excessive use of the crosslinking agent (f) can be suppressed. In addition, by having the crosslinking agent (f) content be within this range, D0 and |ΔT| can be more easily adjusted. For example, by increasing the aforementioned content of the crosslinking agent (f), D 0 and |ΔT| can be more easily reduced.

於不使用交聯劑(f)之情形時,亦即於交聯劑(f)的前述含量為0質量份之情形時,無需設置於形成膜狀接著劑後直至藉由交聯劑(f)之作用所進行之交聯反應結束為止的時間,就能夠縮短步驟時間之方面而言有利。When no crosslinking agent (f) is used, that is, when the content of the crosslinking agent (f) is 0 parts by mass, there is no need to set a time from the formation of the film-like adhesive until the completion of the crosslinking reaction by the crosslinking agent (f), which is advantageous in that the step time can be shortened.

[能量線硬化性樹脂(g)] 膜狀接著劑藉由含有能量線硬化性樹脂(g),能夠藉由照射能量線而改變特性。[Energy ray curing resin (g)] The film adhesive contains an energy ray curing resin (g), which allows its properties to be changed by irradiation with energy rays.

能量線硬化性樹脂(g)係由能量線硬化性化合物所獲得。 作為前述能量線硬化性化合物,例如可列舉於分子內具有至少1個聚合性雙鍵之化合物,較佳為具有(甲基)丙烯醯基之丙烯酸酯系化合物。The energy ray-curable resin (g) is obtained from an energy ray-curable compound. Examples of the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, preferably acrylate compounds having a (meth)acryloyl group.

作為前述丙烯酸酯系化合物,例如可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯等含鏈狀脂肪族骨架之(甲基)丙烯酸酯;二環戊基二(甲基)丙烯酸酯等含環狀脂肪族骨架之(甲基)丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯等聚伸烷基二醇(甲基)丙烯酸酯;寡酯(甲基)丙烯酸酯;(甲基)丙烯酸胺基甲酸酯低聚物;環氧改質(甲基)丙烯酸酯;前述聚伸烷基二醇(甲基)丙烯酸酯以外的聚醚(甲基)丙烯酸酯;衣康酸低聚物等。Examples of the acrylate compounds include trihydroxymethylpropane tri(meth)acrylate, tetrahydroxymethylmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate, 1,4-butanediol di(meth)acrylate, and 1,6-hexanediol di(meth)acrylate. (Meth)acrylates containing a chain aliphatic skeleton such as acrylates; (meth)acrylates containing a cyclic aliphatic skeleton such as dicyclopentyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylates; urethane (meth)acrylate oligomers; epoxy-modified (meth)acrylates; polyether (meth)acrylates other than the aforementioned polyalkylene glycol (meth)acrylates; itaconic acid oligomers, etc.

能量線硬化性樹脂(g)的重量平均分子量較佳為100至30000,更佳為300至10000。The weight average molecular weight of the energy ray-curable resin (g) is preferably 100 to 30,000, more preferably 300 to 10,000.

組成物(III-1)所含有之能量線硬化性樹脂(g)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些能量線硬化性樹脂(g)的組合及比率可任意選擇。The energy ray curable resin (g) contained in the composition (III-1) may be only one kind or two or more kinds. In the case of two or more kinds, the combination and ratio of these energy ray curable resins (g) can be arbitrarily selected.

於使用能量線硬化性樹脂(g)之情形時,組成物(III-1)中,能量線硬化性樹脂(g)的含量相對於組成物(III-1)的總質量之比例較佳為1質量%至95質量%,例如可為1質量%至50質量%、1質量%至25質量%、及1質量%至10質量%之任一種。When the energy ray-curable resin (g) is used, the content of the energy ray-curable resin (g) in the composition (III-1) is preferably 1% by mass to 95% by mass, for example, 1% by mass to 50% by mass, 1% by mass to 25% by mass, and 1% by mass to 10% by mass.

[光聚合起始劑(h)] 於組成物(III-1)及膜狀接著劑含有能量線硬化性樹脂(g)之情形時,為了高效率地進行能量線硬化性樹脂(g)的聚合反應,亦可含有光聚合起始劑(h)。[Photopolymerization initiator (h)] When the composition (III-1) and the film-like adhesive contain the energy ray-curable resin (g), a photopolymerization initiator (h) may be contained in order to efficiently carry out the polymerization reaction of the energy ray-curable resin (g).

作為前述光聚合起始劑(h),例如可列舉:安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香二甲基縮酮等安息香化合物;苯乙酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯乙酮化合物;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等醯基氧化膦化合物;苄基苯基硫醚、一硫化四甲基秋蘭姆等硫醚化合物;1-羥基環己基苯基酮等α-酮醇化合物;偶氮雙異丁腈等偶氮化合物;二茂鈦等二茂鈦化合物;噻噸酮等噻噸酮化合物;過氧化物化合物;二乙醯等二酮化合物;苯偶醯;二苯偶醯;二苯甲酮;2,4-二乙基噻噸酮;1,2-二苯基甲烷;2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮;1-氯蒽醌、2-氯蒽醌等醌化合物等。 另外,作為光聚合起始劑(h),例如亦可列舉胺等光增感劑等。Examples of the photopolymerization initiator (h) include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acyl oxides such as bis(2,4,6-trimethylbenzyl)phenylphosphine oxide and 2,4,6-trimethylbenzyldiphenylphosphine oxide; Phosphine compounds; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thiothione compounds such as thiothione; peroxide compounds; diketone compounds such as diacetyl; benzoyl; dibenzoyl; benzophenone; 2,4-diethylthiothione; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone, etc. In addition, as the photopolymerization initiator (h), for example, photosensitizers such as amine may also be used.

組成物(III-1)及膜狀接著劑所含有之光聚合起始劑(h)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些光聚合起始劑(h)的組合及比率可任意選擇。The composition (III-1) and the film-like adhesive may contain only one photopolymerization initiator (h) or two or more types. When there are two or more types, the combination and ratio of these photopolymerization initiators (h) can be arbitrarily selected.

於使用光聚合起始劑(h)之情形時,組成物(III-1)中,光聚合起始劑(h)的含量相對於能量線硬化性樹脂(g)的含量100質量份,較佳為0.1質量份至20質量份,更佳為1質量份至10質量份,尤佳為2質量份至5質量份。When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the composition (III-1) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and even more preferably 2 to 5 parts by mass, based on 100 parts by mass of the energy ray-curable resin (g).

[著色劑(i)] 著色劑(i)係於膜狀接著劑及膜狀接著劑之硬化物中,能夠調節各種波長的光的穿透率之成分。 作為著色劑(i),例如可列舉:無機系顏料、有機系顏料、有機系染料等公知的著色劑。[Colorant (i)] Colorant (i) is a component in film adhesives and their cured products that adjusts the transmittance of light of various wavelengths. Examples of colorant (i) include well-known colorants such as inorganic pigments, organic pigments, and organic dyes.

作為前述有機系顏料及有機系染料,例如可列舉:銨系色素、花青系色素、部花青系色素、克酮鎓(croconium)系色素、方酸鎓(squalilium)系色素、薁鎓系色素、聚次甲基系色素、萘醌系色素、吡喃鎓系色素、酞菁系色素、萘酞菁系色素、萘內醯胺系色素、偶氮系色素、縮合偶氮系色素、靛藍系色素、紫環酮(perinone)系色素、苝系色素、二噁嗪系色素、喹吖啶酮系色素、異吲哚啉酮系色素、喹啉黃(quinophthalone)系色素、吡咯系色素、硫代靛藍系色素、金屬錯合物系色素(金屬錯鹽染料)、二硫醇金屬錯合物系色素、吲哚酚系色素、三烯丙基甲烷系色素、蒽醌系色素、二噁嗪系色素、萘酚系色素、次甲基偶氮系色素、苯并咪唑酮系色素、皮蒽酮系色素及士林(threne)系色素等。Examples of the organic pigments and organic dyes include ammonium pigments, cyanine pigments, merocyanine pigments, croconium pigments, squalilium pigments, azulenium pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalocyanine pigments, naphtholactam pigments, azo pigments, condensed azo pigments, indigo pigments, perinone pigments, and perylene pigments. , dioxazine pigments, quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments, metal complex pigments (metal complex dyes), dithiol metal complex pigments, indoxyl pigments, triallyl methane pigments, anthraquinone pigments, dioxazine pigments, naphthol pigments, methine azo pigments, benzimidazolone pigments, pyranthrone pigments and threne pigments, etc.

作為前述無機系顏料,例如可列舉:碳黑、鈷系色素、鐵系色素、鉻系色素、鈦系色素、釩系色素、鋯系色素、鉬系色素、釕系色素、鉑系色素、ITO(Indium Tin Oxide;銦錫氧化物)系色素、ATO(Antimony Tin Oxide;銻錫氧化物)系色素等。Examples of the inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (Indium Tin Oxide)-based pigments, and ATO (Antimony Tin Oxide)-based pigments.

組成物(III-1)及膜狀接著劑所含有之著色劑(i)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些著色劑(i)的組合及比率可任意選擇。The coloring agent (i) contained in the composition (III-1) and the film adhesive may be only one type or two or more types. In the case of two or more types, the combination and ratio of these coloring agents (i) can be arbitrarily selected.

於使用著色劑(i)之情形時,組成物(III-1)及膜狀接著劑中的著色劑(i)的含量例如可根據著色劑(i)的種類等而適宜調節。通常,組成物(III-1)中,無論著色劑(i)的種類如何,著色劑(i)的含量相對於溶媒以外的全部成分的總含量之比例(亦即,膜狀接著劑中的著色劑(i)的含量相對於膜狀接著劑的總質量之比例)均較佳為0.01質量%至10質量%。藉由前述比例為前述下限值以上,可更顯著地獲得由使用著色劑(i)所帶來之效果。藉由前述比例為前述上限值以下,可抑制著色劑(i)之過量使用。When a colorant (i) is used, the content of the colorant (i) in the composition (III-1) and the film-forming adhesive can be appropriately adjusted, for example, depending on the type of colorant (i). Generally, regardless of the type of colorant (i) in the composition (III-1), the ratio of the colorant (i) content to the total content of all components other than the solvent (i.e., the ratio of the colorant (i) content in the film-forming adhesive to the total mass of the film-forming adhesive) is preferably 0.01% by mass to 10% by mass. When the ratio is above the lower limit, the effect of using the colorant (i) can be more significantly achieved. When the ratio is below the upper limit, excessive use of the colorant (i) can be suppressed.

[通用添加劑(j)] 通用添加劑(j)可為公知的添加劑,可根據目的任意選擇,並無特別限定。作為較佳的通用添加劑(j),例如可列舉:塑化劑、抗靜電劑、抗氧化劑、吸氣劑(gettering agent)、消泡劑、調平劑等。[General Additive (j)] General additives (j) can be any known additives and can be selected according to the intended purpose without particular limitation. Preferred general additives (j) include, for example, plasticizers, antistatic agents, antioxidants, gettering agents, defoaming agents, and leveling agents.

組成物(III-1)及膜狀接著劑所含有之通用添加劑(i)可僅為1種,亦可為2種以上,於為2種以上之情形時,這些通用添加劑(i)的組合及比率可任意選擇。 組成物(III-1)及膜狀接著劑中的通用添加劑(i)的含量並無特別限定,例如可根據通用添加劑(i)的種類適宜選擇。The general-purpose additive (i) contained in the composition (III-1) and the film-like adhesive may be a single type or two or more types. In the case of two or more types, the combination and ratio of these general-purpose additives (i) can be arbitrarily selected. The content of the general-purpose additive (i) in the composition (III-1) and the film-like adhesive is not particularly limited and can be appropriately selected depending on the type of general-purpose additive (i).

[溶媒] 組成物(III-1)較佳為進而含有溶媒。含有溶媒之組成物(III-1)的操作性變得良好。 前述溶媒並無特別限定,作為較佳的前述溶媒,例如可列舉:甲苯、二甲苯等烴;甲醇、乙醇、2-丙醇、異丁醇(2-甲基丙烷-1-醇)、1-丁醇等醇;乙酸乙酯等酯;丙酮、甲基乙基酮等酮;四氫呋喃等醚;二甲基甲醯胺、N-甲基吡咯啶酮等醯胺(具有醯胺鍵之化合物)等。 組成物(III-1)所含有之溶媒可僅為1種,亦可為2種以上,於為2種以上之情形時,這些溶媒的組合及比率可任意選擇。[Solvent] Composition (III-1) preferably further contains a solvent. Composition (III-1) containing a solvent improves handling properties. The solvent is not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. Composition (III-1) may contain only one solvent or two or more. In the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily selected.

就能夠將組成物(III-1)中的含有成分更均勻地混合之方面而言,組成物(III-1)所含有之溶媒較佳為甲基乙基酮等。From the viewpoint of being able to more uniformly mix the components in the composition (III-1), the solvent contained in the composition (III-1) is preferably methyl ethyl ketone or the like.

組成物(III-1)中的溶媒的含量並無特別限定,例如根據溶媒以外的成分的種類適宜選擇即可。The content of the solvent in the composition (III-1) is not particularly limited and may be appropriately selected depending on the types of components other than the solvent.

[能量線硬化性接著劑組成物] 作為能量線硬化性接著劑組成物,例如可列舉含有能量線硬化性成分之組成物(本說明書中,有時簡稱為「組成物(III-2)」),例如亦可為含有能量線硬化性成分、不具有能量線硬化性基之聚合物、及光聚合起始劑之組成物。[Energy ray-curable adhesive composition] Examples of energy ray-curable adhesive compositions include compositions containing energy ray-curable components (sometimes referred to as "composition (III-2)" in this specification), and compositions containing energy ray-curable components, polymers without energy ray-curable groups, and photopolymerization initiators.

作為前述能量線硬化性成分,例如可列舉具有丙烯醯基等能量線聚合性不飽和基(能量線聚合性基)、及縮水甘油基等可與其他化合物反應之基之樹脂等。 前文所說明之組成物(III-1)中的環氧樹脂(b1)中,存在相當於前述能量線硬化性成分之環氧樹脂。Examples of the energy ray-curable component include resins having energy ray-polymerizable unsaturated groups (energy ray-polymerizable groups) such as acryl groups, and groups reactive with other compounds such as glycidyl groups. The epoxy resin (b1) in the composition (III-1) described above contains an epoxy resin corresponding to the energy ray-curable component.

作為前述不具有能量線硬化性基之聚合物,可列舉:丙烯酸樹脂、苯氧基樹脂、胺基甲酸酯樹脂、聚酯樹脂、橡膠系樹脂、丙烯酸胺基甲酸酯樹脂等。 這些之中,不具有能量線硬化性基之聚合物較佳為丙烯酸樹脂。 前文所說明之(III-1)中的聚合物成分(a)中,存在相當於前述不具有能量線硬化性基之聚合物的成分。Examples of the aforementioned polymer lacking energy ray-curable groups include acrylic resins, phenoxy resins, urethane resins, polyester resins, rubber-based resins, and acrylic urethane resins. Of these, acrylic resins are preferred. The polymer component (a) in (III-1) described above contains a component corresponding to the aforementioned polymer lacking energy ray-curable groups.

作為前述光聚合起始劑,例如可列舉與前文所說明之組成物(III-1)中的光聚合起始劑(h)相同的光聚合起始劑。Examples of the photopolymerization initiator include the same photopolymerization initiators as those mentioned above as the photopolymerization initiator (h) in the composition (III-1).

組成物(III-2)中的前述能量線硬化性成分、不具有能量線硬化性基之聚合物、及光聚合起始劑的含量根據這些成分的種類適宜調節即可,並無特別限定。例如,於前述能量線硬化性成分、前述不具有能量線硬化性基之聚合物、及前述光聚合起始劑之任一種成分中,存在有相當於組成物(III-1)中的任一種含有成分之成分之情形時,該成分於組成物(III-2)中的含量可設為與組成物(III-1)中的該對應成分的含量相同。The contents of the energy ray-curable component, the polymer without an energy ray-curable group, and the photopolymerization initiator in composition (III-2) can be appropriately adjusted depending on the types of these components and are not particularly limited. For example, if any of the energy ray-curable component, the polymer without an energy ray-curable group, and the photopolymerization initiator contains a component equivalent to any component contained in composition (III-1), the content of that component in composition (III-2) can be set to the same as the content of the corresponding component in composition (III-1).

組成物(III-2)亦可根據目的含有不相當於前述能量線硬化性成分、前述不具有能量線硬化性基之聚合物、及前述光聚合起始劑中的任一種成分之其他成分。 作為前述其他成分,例如可列舉:選自由環氧樹脂、熱硬化劑、填充材料、偶合劑、交聯劑、著色劑、通用添加劑及溶媒所組成之群組中的1種或2種以上。Composition (III-2) may also contain other components other than the aforementioned energy ray-curable component, the aforementioned polymer without an energy ray-curable group, and the aforementioned photopolymerization initiator, depending on the intended purpose. Examples of such other components include one or more selected from the group consisting of epoxy resins, thermosetting agents, fillers, coupling agents, crosslinking agents, colorants, general-purpose additives, and solvents.

作為組成物(III-2)中的前述環氧樹脂、熱硬化劑、填充材料、偶合劑、交聯劑、著色劑、通用添加劑及溶媒,可列舉分別與組成物(III-1)中的環氧樹脂(b1)、熱硬化劑(b2)、填充材料(d)、偶合劑(e)、交聯劑(f)、著色劑(i)、通用添加劑(j)及溶媒相同者。The epoxy resin, thermosetting agent, filler, coupling agent, crosslinking agent, colorant, general additive, and solvent in composition (III-2) may be the same as the epoxy resin (b1), thermosetting agent (b2), filler (d), coupling agent (e), crosslinking agent (f), colorant (i), general additive (j), and solvent in composition (III-1).

組成物(III-2)中的前述環氧樹脂、熱硬化劑、填充材料、偶合劑、交聯劑、著色劑、通用添加劑及溶媒的含量根據目的適宜調節即可,並無特別限定。The contents of the epoxy resin, thermosetting agent, filler, coupling agent, crosslinking agent, coloring agent, general additive, and solvent in the composition (III-2) can be appropriately adjusted according to the purpose and are not particularly limited.

作為本實施形態的較佳的硬化性之膜狀接著劑的另一例,可列舉以下之膜狀接著劑:係硬化性之膜狀接著劑,且前述膜狀接著劑含有聚合物成分、熱硬化性成分、硬化促進劑及偶合劑,前述聚合物成分包含丙烯酸樹脂,前述熱硬化性成分包含環氧系熱硬化性樹脂,前述環氧系熱硬化性樹脂由環氧樹脂及熱硬化劑所構成,前述膜狀接著劑中的前述聚合物成分的含量之比例相對於前述膜狀接著劑的總質量為5質量%至40質量%,前述膜狀接著劑中的前述丙烯酸樹脂的含量之比例相對於前述聚合物成分的總含量為25質量%至100質量%,前述膜狀接著劑中的前述熱硬化性成分的含量之比例相對於前述聚合物成分的含量100質量份為20質量份至1000質量份,前述膜狀接著劑中的前述熱硬化劑的含量相對於前述環氧樹脂的含量100質量份為1質量份至60質量份,針對為多片前述膜狀接著劑之積層物且厚度為200μm之第1試片,依據JISK7128-3,將夾住並固定前述第1試片之一對夾具間的距離設為60mm、撕裂速度設為200mm/min,藉由直角形撕裂法進行撕裂試驗時,前述第1試片的撕裂強度成為最大後至前述第1試片斷裂為止的前述第1試片在撕裂方向上的位移量為15mm以下。As another example of a preferable curable film adhesive of the present embodiment, the following film adhesive can be cited: a curable film adhesive, wherein the film adhesive contains a polymer component, a thermosetting component, a curing accelerator, and a coupling agent, wherein the polymer component includes an acrylic resin, the thermosetting component includes an epoxy-based thermosetting resin, the epoxy-based thermosetting resin is composed of an epoxy resin and a thermosetting agent, the polymer component in the film adhesive has a content ratio of 5% to 40% by mass relative to the total mass of the film adhesive, the acrylic resin in the film adhesive has a content ratio of 25% to 100% by mass relative to the total mass of the polymer component, and the coupling agent in the film adhesive has a content ratio of 10% to 20%. The ratio of the thermosetting component content is 20 parts by mass to 100 parts by mass of the polymer component content, and the content of the thermosetting agent in the film-like adhesive is 1 part by mass to 60 parts by mass relative to 100 parts by mass of the epoxy resin content. For a first test piece comprising a laminate of multiple sheets of the film-like adhesive and having a thickness of 200 μm, in accordance with JIS K7128-3, the distance between a pair of clamps holding and securing the first test piece is set to 60 mm, and the tearing speed is set to 200 mm/min. When a tear test is conducted using a right-angle tear method, the displacement of the first test piece in the tear direction from the time the tear strength of the first test piece reaches a maximum until the first test piece breaks is no more than 15 mm.

[接著劑組成物之製造方法] 接著劑組成物(熱硬化性接著劑組成物、能量線硬化性接著劑組成物)可藉由調配用以構成該接著劑組成物之各成分而獲得。 調配各成分時的添加順序並無特別限定,亦可同時添加2種以上之成分。 於使用溶媒之情形時,可藉由將溶媒與溶媒以外的任一種調配成分混合而將該調配成分預先稀釋來使用、或是不將溶媒以外的任一種調配成分預先稀釋而將溶媒與這些調配成分混合來使用。[Method for Producing Adhesive Compositions] Adhesive compositions (thermosetting adhesive compositions, energy beam-curing adhesive compositions) can be obtained by blending the components that constitute the adhesive composition. The order of adding the components is not particularly limited, and two or more components may be added simultaneously. When using a solvent, the solvent can be mixed with any component other than the solvent and the resulting mixture can be diluted before use, or the solvent and the resulting mixture can be mixed without diluting any of the components other than the solvent.

調配時混合各成分之方法並無特別限定,自以下公知的方法中適宜選擇即可:使攪拌子或攪拌翼等旋轉而進行混合之方法;使用混合機進行混合之方法;施加超音波進行混合之方法等。 關於添加及混合各成分時的溫度及時間,只要不使各調配成分劣化,則並無特別限定,適宜調節即可,溫度較佳為15℃至30℃。The method for mixing the ingredients during preparation is not particularly limited and can be appropriately selected from the following known methods: mixing by rotating a stirrer or impeller, mixing using a mixer, mixing by applying ultrasonic waves, etc. The temperature and time for adding and mixing the ingredients are not particularly limited as long as they do not degrade the ingredients and can be adjusted appropriately; the temperature is preferably between 15°C and 30°C.

◇切割黏晶片 本發明的一實施形態的切割黏晶片具備支撐片、及設置於前述支撐片的一面上之膜狀接著劑,且前述膜狀接著劑為上述之本發明的一實施形態的膜狀接著劑。 本實施形態的切割黏晶片例如藉由切割將半導體晶圓分割為半導體晶片,藉此可用作用以製造前文所說明之具膜狀接著劑之半導體晶片之片。亦即,前述切割黏晶片中的支撐片可用作切割片。◇ Dicing Adhesive Wafer: One embodiment of the dicing adhesive wafer of the present invention comprises a support sheet and a film adhesive disposed on one surface of the support sheet. The film adhesive is the film adhesive of the embodiment of the present invention described above. This dicing adhesive wafer of this embodiment can be used, for example, to separate semiconductor wafers into semiconductor chips by dicing, thereby producing sheets of semiconductor chips with film adhesive as described above. In other words, the support sheet in the dicing adhesive wafer can function as a dicing sheet.

[支撐片] 前述支撐片可由1層(單層)所構成,亦可由2層以上之多層所構成。於支撐片由多層所構成之情形時,這些多層的構成材料及厚度相互可相同亦可不同,這些多層的組合只要無損本發明的效果,則並無特別限定。[Support Sheet] The support sheet may be composed of a single layer or multiple layers. When the support sheet is composed of multiple layers, the materials and thicknesses of the multiple layers may be the same or different. The combination of these layers is not particularly limited as long as it does not impair the effects of the present invention.

作為前述支撐片,例如可列舉:僅由基材所構成之支撐片;具備基材、及設置於前述基材的一面上之黏著劑層之支撐片;具備基材、及設置於前述基材的一面上之黏著劑層以外的功能層之支撐片等。Examples of the aforementioned support sheet include: a support sheet consisting solely of a substrate; a support sheet comprising a substrate and an adhesive layer disposed on one surface of the substrate; a support sheet comprising a substrate and a functional layer other than the adhesive layer disposed on one surface of the substrate, and the like.

於支撐片具備前述基材及黏著劑層之情形時,前述切割黏晶片中,黏著劑層配置於基材與前述膜狀接著劑之間。When the supporting sheet comprises the aforementioned substrate and adhesive layer, in the aforementioned dicing adhesive sheet, the adhesive layer is disposed between the substrate and the aforementioned film-like adhesive.

於支撐片具備前述基材及功能層之情形時,前述切割黏晶片中,功能層可配置於基材之膜狀接著劑側,亦可配置於基材中之與膜狀接著劑側為相反側。 本實施形態中,將配置於基材之膜狀接著劑側之功能層稱為「中間層」,將配置於基材中之與膜狀接著劑側為相反側之功能層稱為「背面層」。藉由將前述中間層配置於基材之膜狀接著劑側,而對支撐片或切割黏晶片賦予黏著性以外的新的功能。藉由將前述背面層配置於基材中之與膜狀接著劑側為相反側,而對支撐片或切割黏晶片賦予黏著性以外的新的功能。作為背面層,例如可列舉:用以防止支撐片或切割黏晶片之帶電之抗靜電層;用以於將支撐片或切割黏晶片層疊保存時,防止支撐片彼此或切割黏晶片彼此之接著、或支撐片或切割黏晶片接著至吸附台之抗接著層等。When the support sheet has the aforementioned substrate and functional layer, the functional layer can be arranged on the film adhesive side of the substrate or on the side of the substrate opposite to the film adhesive side. In this embodiment, the functional layer arranged on the film adhesive side of the substrate is referred to as the "middle layer," and the functional layer arranged on the side of the substrate opposite to the film adhesive side is referred to as the "back layer." By arranging the aforementioned middle layer on the film adhesive side of the substrate, a new function other than adhesion is imparted to the support sheet or the dicing adhesive. By arranging the aforementioned back layer on the side of the substrate opposite to the film adhesive side, a new function other than adhesion is imparted to the support sheet or the dicing adhesive. Examples of the back layer include: an antistatic layer for preventing the support sheet or dicing adhesive wafer from being charged; an anti-adhesion layer for preventing the support sheets or dicing adhesive wafers from adhering to each other when the support sheets or dicing adhesive wafers are stacked and stored, or preventing the support sheets or dicing adhesive wafers from adhering to the adsorption platform, etc.

僅由基材所構成之前述支撐片不僅適宜作為切割片,亦適宜作為載體片。具備此種僅由基材所構成之支撐片之切割黏晶片係將膜狀接著劑中之與具備支撐片(亦即,基材)之側為相反側的面(亦即,前述第1面)貼附於半導體晶圓的一面而使用。 於使用僅由基材所構成之支撐片之情形時,能夠以低成本製造切割黏晶片。The aforementioned support sheet, composed solely of a substrate, is suitable not only for use as a dicing sheet but also as a carrier sheet. A dicing wafer having such a support sheet composed solely of a substrate is used by attaching the surface of the film adhesive opposite to the side having the support sheet (i.e., the substrate) (i.e., the aforementioned first surface) to one side of a semiconductor wafer. Using a support sheet composed solely of a substrate allows for low-cost production of the dicing wafer.

具備基材及黏著劑層之前述支撐片、以及具備基材及功能層之前述支撐片適宜作為切割片。具備此種支撐片之切割黏晶片亦將膜狀接著劑中之與具備支撐片之側為相反側的面(第1面)貼附於半導體晶圓的一面而使用。 於使用具備基材及黏著劑層之支撐片之情形時,能夠容易地調節切割黏晶片中之支撐片與膜狀接著劑之間的黏著力或密接性。 於使用具備基材及功能層之支撐片之情形時,支撐片或切割黏晶片表現出與功能層的特性相對應之黏著性以外的功能。The aforementioned support sheet comprising a base material and an adhesive layer, and the aforementioned support sheet comprising a base material and a functional layer, are suitable for use as dicing sheets. Dicing wafers comprising such support sheets are also used by attaching the surface (first surface) of the film adhesive opposite to the side comprising the support sheet to one side of a semiconductor wafer. When using a support sheet comprising a base material and an adhesive layer, the adhesion or close contact between the support sheet and the film adhesive in the dicing wafer can be easily adjusted. When using a support sheet comprising a base material and a functional layer, the support sheet or dicing wafer exhibits functions other than adhesiveness corresponding to the characteristics of the functional layer.

藉由本實施形態的切割黏晶片具備前述膜狀接著劑,即便支撐片不具備與膜狀接著劑直接接觸之黏著劑層,於使用前述切割黏晶片製作具膜狀接著劑之半導體晶片並進行拾取時,亦能夠抑制膜狀接著劑殘留於支撐片。 亦即,於使用於僅由基材所構成之支撐片設置有膜狀接著劑之切割黏晶片、具備基材及前述功能層之切割黏晶片等具有黏著劑層與膜狀接著劑不直接接觸之構成之前述切割黏晶片之情形時,本發明的效果得以最顯著地發揮。Because the dicing wafer of this embodiment includes the aforementioned film adhesive, even when the support sheet does not have an adhesive layer in direct contact with the film adhesive, film adhesive residue can be suppressed when semiconductor chips with the film adhesive are produced and picked up using the dicing wafer. Specifically, the effects of the present invention are most significantly exhibited when using dicing wafers with a structure where the adhesive layer and the film adhesive are not in direct contact, such as dicing wafers with a film adhesive applied to a support sheet consisting solely of a substrate, or dicing wafers with a substrate and the aforementioned functional layer.

但是,本實施形態的切割黏晶片亦可具備與膜狀接著劑直接接觸之黏著劑層,該情形時,藉由膜狀接著劑之作用及黏著劑層之作用,於拾取具膜狀接著劑之半導體晶片時能夠更容易地抑制膜狀接著劑殘留於支撐片。However, the dicing adhesive wafer of this embodiment may also have an adhesive layer that is in direct contact with the film adhesive. In this case, the film adhesive and the adhesive layer can more easily prevent the film adhesive from remaining on the support sheet when picking up the semiconductor wafer with the film adhesive.

切晶黏晶片的使用方法將於後文進行詳細說明。 以下,對構成支撐片之各層進行說明。The use of the die-bonding sheet will be explained in detail later. Below, we will explain the various layers that make up the support sheet.

[基材] 前述基材為片狀或膜狀,作為前述基材的構成材料,例如可列舉各種樹脂。 作為前述樹脂,例如可列舉:低密度聚乙烯(LDPE;Low Density Polyethylene)、直鏈低密度聚乙烯(LLDPE;Linear Low Density Polyethylene)、高密度聚乙烯(HDPE;High Density Polyethylene)等聚乙烯;聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、降冰片烯樹脂等聚乙烯以外的聚烯烴;乙烯-乙酸乙烯酯共聚物、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-降冰片烯共聚物等乙烯系共聚物(使用乙烯作為單體而獲得之共聚物);聚氯乙烯、氯乙烯共聚物等氯乙烯系樹脂(使用氯乙烯作為單體而獲得之樹脂);聚苯乙烯;聚環烯烴;聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚間苯二甲酸乙二酯、聚-2,6-萘二甲酸乙二酯、全部構成單元具有芳香族環式基之全芳香族聚酯等聚酯;2種以上之前述聚酯之共聚物;聚(甲基)丙烯酸酯;聚胺基甲酸酯;聚丙烯酸胺基甲酸酯;聚醯亞胺;聚醯胺;聚碳酸酯;氟樹脂;聚縮醛;改質聚苯醚;聚苯硫醚;聚碸;聚醚酮等。 另外,作為前述樹脂,例如亦可列舉前述聚酯與前述聚酯以外的樹脂之混合物等聚合物合金。前述聚酯與前述聚酯以外的樹脂之聚合物合金較佳為聚酯以外的樹脂的量為相對較少量。 另外,作為前述樹脂,例如亦可列舉:前文例示之前述樹脂中的1種或2種以上交聯而成之交聯樹脂;使用前文例示之前述樹脂中的1種或2種以上之離子聚合物等改質樹脂。[Substrate] The aforementioned substrate is in the form of a sheet or film. Examples of the constituent material of the aforementioned substrate include various resins. Examples of the aforementioned resin include polyethylenes such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polyolefins other than polyethylenes such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene-vinyl acetate copolymers, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate copolymers, and ethylene-norbornene copolymers (copolymers obtained using ethylene as a monomer); vinyl chloride resins (resins obtained using vinyl chloride as a monomer) such as polyvinyl chloride and vinyl chloride copolymers; and polystyrene. Ethylene; polycycloolefins; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polyethylene butylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalate, and wholly aromatic polyesters containing aromatic cyclic groups in all constituent units; copolymers of two or more of the aforementioned polyesters; poly(meth)acrylates; polyurethanes; polyacrylic urethanes; polyimides; polyamides; polycarbonates; fluororesins; polyacetals; modified polyphenylene ethers; polyphenylene sulfides; polysulfones; and polyetherketones. Also, examples of the aforementioned resins include polymer alloys such as mixtures of the aforementioned polyesters and resins other than polyesters. In polymer alloys of the aforementioned polyesters and resins other than polyesters, the amount of the resin other than polyester is preferably relatively small. Examples of the resin include crosslinked resins obtained by crosslinking one or more of the resins listed above; and modified resins such as ionomers obtained by crosslinking one or more of the resins listed above.

這些之中,作為基材的構成材料之前述樹脂較佳為聚乙烯、聚乙烯以外的聚烯烴、乙烯系共聚物等具有由烯烴衍生之構成單元之烯烴系樹脂。前述膜狀接著劑直接接觸於基材而構成之切割黏晶片中,又以基材之與膜狀接著劑之接觸面含有此種樹脂之切割黏晶片在上述之抑制膜狀接著劑殘留於支撐片(換言之,基材)之效果上變得更高。 另外,作為基材的構成材料之前述樹脂較佳為不具有羧基、羰基、羥基等極性基。基材之與膜狀接著劑之接觸面含有此種樹脂之切割黏晶片同樣地在上述之抑制膜狀接著劑殘留於支撐片(換言之,基材)之效果上變得更高。Among these, the aforementioned resins as the substrate material are preferably olefinic resins containing olefin-derived units, such as polyethylene, polyolefins other than polyethylene, and ethylene copolymers. In dicing adhesive sheets constructed with the aforementioned film adhesive directly contacting the substrate, dicing adhesive sheets containing such resins on the substrate's contact surface with the film adhesive exhibit a higher effectiveness in suppressing film adhesive residue on the support sheet (in other words, the substrate). Furthermore, the aforementioned resins as the substrate material are preferably free of polar groups such as carboxyl, carbonyl, or hydroxyl groups. A dicing wafer in which the surface of the substrate that contacts the film adhesive contains this resin also has a higher effect of suppressing the film adhesive from remaining on the support sheet (in other words, the substrate).

構成基材之樹脂可僅為1種,亦可為2種以上,於為2種以上之情形時,這些樹脂的組合及比率可任意選擇。The resin constituting the substrate may be only one type or two or more types. In the case of two or more types, the combination and ratio of these resins can be arbitrarily selected.

基材可由1層(單層)所構成,亦可由2層以上之多層所構成,於由多層所構成之情形時,這些多層相互可相同亦可不同,這些多層的組合並無特別限定。The substrate may be composed of a single layer (single layer) or a plurality of layers including two or more layers. In the case of a plurality of layers, the layers may be the same or different from each other, and the combination of the layers is not particularly limited.

基材的厚度較佳為50μm至300μm,更佳為60μm至150μm。藉由基材的厚度為此種範圍,切晶黏晶片的可撓性、及對半導體晶圓之貼附性進一步提高。 此處,所謂「基材的厚度」,意指基材整體的厚度,例如所謂由多層所構成之基材的厚度,意指構成基材之全部層的合計厚度。The substrate thickness is preferably 50 μm to 300 μm, more preferably 60 μm to 150 μm. A substrate thickness within this range further improves the flexibility of the die-bonding wafer and its adhesion to the semiconductor wafer. Here, "substrate thickness" refers to the thickness of the entire substrate. For example, for a multi-layer substrate, the thickness refers to the combined thickness of all layers comprising the substrate.

基材中除含有前述樹脂等主要構成材料以外,亦可含有填充材料、著色劑、抗靜電劑、抗氧化劑、有機滑劑、觸媒、軟化劑(塑化劑)等公知的各種添加劑。In addition to the aforementioned resin and other main components, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

基材可為透明,亦可為不透明,還可根據目的而著色,還可蒸鍍其他層。The substrate can be transparent or opaque, can be colored according to the purpose, and can also be vapor-deposited with other layers.

為了提高基材與設置於基材上之層(例如,黏著劑層、膜狀接著劑等)之密接性,亦可對表面實施利用噴砂處理、溶劑處理等之凹凸化處理;電暈放電處理、電子束照射處理、電漿處理、臭氧/紫外線照射處理、火焰處理、鉻酸處理、熱風處理等氧化處理等。 另外,基材的表面亦可經實施底塗處理。 另外,亦可於基材的表面具有剝離處理層。前述剝離處理層可藉由使用公知的各種剝離劑,將基材的表面進行剝離處理而形成。 另外,基材亦可藉由含有特定範圍的成分(例如樹脂等),而至少於基材的一面具有黏著性。To improve adhesion between the substrate and layers disposed thereon (e.g., adhesive layers, film adhesives, etc.), the surface may be subjected to surface roughening treatments such as sandblasting or solvent treatment; or oxidation treatments such as coma discharge treatment, electron beam irradiation, plasma treatment, ozone/UV irradiation, flame treatment, chromic acid treatment, and hot air treatment. Furthermore, the substrate surface may be primed. Also, the substrate surface may have a release layer. This release layer can be formed by applying a release treatment to the substrate surface using various known release agents. Alternatively, the substrate may be made adhesive on at least one side by containing a specific range of components (e.g., resins).

於支撐片僅由基材所構成之情形或支撐片具有基材的露出面之情形等支撐片之膜狀接著劑側的最表層為基材之情形時,就於拾取具膜狀接著劑之半導體晶片時,抑制膜狀接著劑殘留於支撐片(換言之,基材)之效果變得更高之方面而言,基材之膜狀接著劑側的面(本說明書中,有時稱為「第1面」)較佳為不實施前述氧化處理、前述底塗處理等表面處理。In cases where the support sheet is composed only of a substrate or has an exposed surface of the substrate, and the outermost layer of the film adhesive side of the support sheet is the substrate, in order to further improve the effect of suppressing the film adhesive residue on the support sheet (in other words, the substrate) when picking up a semiconductor chip with a film adhesive, it is preferred that the surface of the film adhesive side of the substrate (sometimes referred to as the "first surface" in this specification) is not subjected to the aforementioned oxidation treatment, the aforementioned primer treatment, or other surface treatments.

基材可利用公知的方法進行製造。例如,含有樹脂之基材可藉由將含有前述樹脂之樹脂組成物進行成形而進行製造。The substrate can be manufactured using a known method. For example, a substrate containing a resin can be manufactured by molding a resin composition containing the aforementioned resin.

[黏著劑層] 前述黏著劑層為片狀或膜狀,含有黏著劑。 作為前述黏著劑,例如可列舉:丙烯酸樹脂、胺基甲酸酯樹脂、橡膠系樹脂、聚矽氧樹脂、環氧系樹脂、聚乙烯醚、聚碳酸酯、聚酯樹脂等黏著性樹脂。[Adhesive Layer] The adhesive layer is in sheet or film form and contains an adhesive. Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ether, polycarbonate, and polyester resins.

本說明書中,「黏著性樹脂」包括具有黏著性之樹脂及具有接著性之樹脂兩者。例如,前述黏著性樹脂不僅包括樹脂本身具有黏著性之樹脂,亦包括藉由與添加劑等其他成分併用而顯示黏著性之樹脂、及藉由存在熱或水等觸發(trigger)而顯示接著性之樹脂等。In this specification, "adhesive resin" includes both adhesive resins and adhesive resins. For example, the aforementioned adhesive resins include not only resins that have adhesive properties themselves, but also resins that exhibit adhesive properties by combining with other ingredients such as additives, and resins that exhibit adhesive properties when triggered by heat or water.

黏著劑層可由1層(單層)所構成,亦可由2層以上之多層所構成,於由多層所構成之情形時,這些多層相互可相同亦可不同,這些多層的組合並無特別限定。The adhesive layer may be composed of a single layer or a plurality of layers. In the case of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the plurality of layers is not particularly limited.

黏著劑層的厚度並無特別限定,較佳為1μm至100μm,例如可為1μm至60μm、及1μm至30μm之任一種。 此處,所謂「黏著劑層的厚度」,意指黏著劑層整體的厚度,例如所謂由多層所構成之黏著劑層的厚度,意指構成黏著劑層之全部層的合計厚度。The thickness of the adhesive layer is not particularly limited, but is preferably 1 μm to 100 μm, and can be, for example, 1 μm to 60 μm or 1 μm to 30 μm. Herein, the term "thickness of the adhesive layer" refers to the thickness of the adhesive layer as a whole. For example, the term "thickness of a multi-layered adhesive layer" refers to the combined thickness of all layers comprising the adhesive layer.

黏著劑層可使用能量線硬化性黏著劑而形成,亦可使用非能量線硬化性黏著劑而形成。亦即,黏著劑層可為能量線硬化性及非能量線硬化性之任一種。能量線硬化性之黏著劑層能夠容易地調節該黏著劑層於硬化前及硬化後的物性。The adhesive layer can be formed using either an energy-beam-curable adhesive or a non-energy-beam-curable adhesive. In other words, the adhesive layer can be either energy-beam-curable or non-energy-beam-curable. Energy-beam-curable adhesive layers can easily adjust their physical properties before and after curing.

黏著劑層可使用含有黏著劑之黏著劑組成物而形成。例如,於黏著劑層之形成對象面塗敷黏著劑組成物,視需要使之乾燥,藉此能夠於目標部位形成黏著劑層。黏著劑組成物中的常溫下不會氣化的成分彼此的含量之比率通常與黏著劑層中的前述成分彼此的含量之比率相同。The adhesive layer can be formed using an adhesive composition containing an adhesive. For example, the adhesive composition is applied to the surface to be formed and dried as needed to form the adhesive layer at the target location. The ratio of the components in the adhesive composition that do not vaporize at room temperature is generally the same as the ratio of the components in the adhesive layer.

黏著劑組成物可利用與上述之接著劑組成物之情形相同的方法進行塗敷。The adhesive composition can be applied in the same manner as the adhesive composition described above.

於黏著劑層為能量線硬化性之情形時,作為能量線硬化性之黏著劑組成物,例如可列舉以下之黏著劑組成物等:黏著劑組成物(I-1),含有非能量線硬化性之黏著性樹脂(I-1a)(以下,有時簡稱為「黏著性樹脂(I-1a)」)及能量線硬化性化合物;黏著劑組成物(I-2),含有於前述黏著性樹脂(I-1a)的側鏈導入有不飽和基之能量線硬化性之黏著性樹脂(I-2a)(以下,有時簡稱為「黏著性樹脂(I-2a)」);黏著劑組成物(I-3),含有前述黏著性樹脂(I-2a)及能量線硬化性化合物。When the adhesive layer is energy-ray-curable, examples of the energy-ray-curable adhesive composition include the following: an adhesive composition (I-1) containing a non-energy-ray-curable adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-1a)") and an energy-ray-curable compound; an adhesive composition (I-2) containing an energy-ray-curable adhesive resin (I-2a) having an unsaturated group introduced into the side chain of the adhesive resin (I-1a) (hereinafter sometimes referred to as "adhesive resin (I-2a)"); and an adhesive composition (I-3) containing the adhesive resin (I-2a) and an energy-ray-curable compound.

於黏著劑層為非能量線硬化性之情形時,作為非能量線硬化性之黏著劑組成物,例如可列舉含有前述黏著性樹脂(I-1a)之黏著劑組成物(I-4)等。When the adhesive layer is non-energy ray-curable, examples of the non-energy ray-curable adhesive composition include the adhesive composition (I-4) containing the aforementioned adhesive resin (I-1a).

黏著劑組成物(I-1)至黏著劑組成物(I-4)等黏著劑組成物除調配成分不同之方面以外,可利用與上述之接著劑組成物之情形相同的方法進行製造。Adhesive compositions (I-1) to (I-4) can be produced by the same method as the adhesive composition described above, except that the ingredients are different.

[功能層] 前述功能層較佳為片狀或膜狀,且含有樹脂。 功能層可由樹脂所構成,亦可含有樹脂及樹脂以外的成分。 含有樹脂之功能層例如可藉由將前述樹脂或含有前述樹脂之功能層形成用組成物成形而形成。另外,功能層亦可藉由於功能層的形成對象面塗敷功能層形成用組成物,視需要使之乾燥而形成。[Functional Layer] The functional layer is preferably in sheet or film form and contains a resin. The functional layer may be composed solely of a resin or may contain a resin and components other than resins. A functional layer containing a resin can be formed, for example, by molding the resin or a functional layer-forming composition containing the resin. Alternatively, the functional layer can be formed by applying the functional layer-forming composition to the surface on which the functional layer is to be formed and drying it as needed.

前述功能層形成用組成物中的前述樹脂的含量並無特別限定,例如可設為10質量%至90質量%,但這係一例。The content of the resin in the functional layer-forming composition is not particularly limited and can be, for example, 10% by mass to 90% by mass, but this is merely an example.

功能層可由1層(單層)所構成,亦可由2層以上之多層所構成,於由多層所構成之情形時,這些多層相互可相同亦可不同,這些功能層的組合並無特別限定。The functional layer may be composed of a single layer (single layer) or a plurality of layers. In the case of a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the functional layers is not particularly limited.

功能層的厚度並無特別限定,可根據該功能層的種類而適宜設定。 此處,所謂「功能層的厚度」,意指功能層整體的厚度,例如所謂由多層所構成之功能層的厚度,意指構成功能層之全部層的合計厚度。The thickness of the functional layer is not particularly limited and can be appropriately set depending on the type of functional layer. Herein, the term "thickness of the functional layer" refers to the thickness of the entire functional layer. For example, the term "thickness of a multi-layered functional layer" refers to the combined thickness of all layers comprising the functional layer.

其次,一邊參照圖式,一邊說明本實施形態的切割黏晶片的示例。Next, an example of cutting a bonded wafer according to this embodiment will be described with reference to the drawings.

圖4係以示意方式表示本實施形態的切割黏晶片的一例之剖視圖。 此處所示之切晶黏晶片101具備支撐片10,於支撐片10的一面(第1面)10a上具備膜狀接著劑13。支撐片10僅由基材11所構成,換言之,切晶黏晶片101具有於基材11的一面(本說明書中,有時稱為「第1面」)11a上積層有膜狀接著劑13之構成。另外,切晶黏晶片101進而於膜狀接著劑13上具備剝離膜15。Figure 4 is a schematic cross-sectional view of an example of a dicing adhesive wafer according to this embodiment. The dicing adhesive wafer 101 shown here includes a support sheet 10, with a film-like adhesive 13 applied to one side (first side) 10a of the support sheet 10. The support sheet 10 is composed solely of a substrate 11. In other words, the dicing adhesive wafer 101 has a structure in which the film-like adhesive 13 is deposited on one side (sometimes referred to as the "first side" in this specification) 11a of the substrate 11. Furthermore, the dicing adhesive wafer 101 further includes a release film 15 applied to the film-like adhesive 13.

切晶黏晶片101中,於基材11的第1面11a積層有膜狀接著劑13,於膜狀接著劑13中之與具備基材11之側為相反側的面(本說明書中,有時稱為「第1面」)13a的一部分、亦即周緣部附近的區域積層有治具用接著劑層16,於膜狀接著劑13的第1面13a中未積層治具用接著劑層16之面、及治具用接著劑層16中未與膜狀接著劑13接觸之面16a(上表面及側面)積層有剝離膜15。 基材11的第1面11a與支撐片10的第1面10a相同。In the wafer bonding chip 101, a film adhesive 13 is deposited on the first surface 11a of the substrate 11. A jig adhesive layer 16 is deposited on a portion of the surface 13a of the film adhesive 13 opposite to the side having the substrate 11 (sometimes referred to as the "first surface" in this specification), i.e., an area near the periphery. A release film 15 is deposited on the surface of the first surface 13a of the film adhesive 13 not deposited with the jig adhesive layer 16 and on the surface 16a of the jig adhesive layer 16 not in contact with the film adhesive 13 (the top surface and side surfaces). The first surface 11 a of the base material 11 is identical to the first surface 10 a of the supporting sheet 10 .

膜狀接著劑13如前文所說明。 剝離膜15與圖3所示之第1剝離膜151或第2剝離膜152相同。The film adhesive 13 is as described above. The release film 15 is the same as the first release film 151 or the second release film 152 shown in FIG3 .

治具用接著劑層16例如可為含有接著劑成分之單層結構,亦可為於成為芯材之片的兩面積層有含有接著劑成分之層而成之多層結構。The jig adhesive layer 16 may be, for example, a single-layer structure containing an adhesive component, or a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a sheet serving as a core material.

切晶黏晶片101係以移除剝離膜15之狀態,於膜狀接著劑13的第1面13a貼附半導體晶圓(省略圖示)的內面,進而將治具用接著劑層16的面16a中的上表面貼附於環狀框等治具而使用。The die-cutting bond sheet 101 is used by attaching the inner surface of a semiconductor wafer (not shown) to the first surface 13a of the film adhesive 13 with the peeling film 15 removed, and then attaching the upper surface of the surface 16a of the jig adhesive layer 16 to a jig such as a ring frame.

圖5係以示意方式表示本實施形態的切割黏晶片的另一例之剖視圖。 此處所示之切晶黏晶片102除不具備治具用接著劑層16之方面以外,與圖4所示之切晶黏晶片101相同。亦即,切晶黏晶片102中,於基材11的第1面11a(支撐片10的第1面10a)積層有膜狀接著劑13,於膜狀接著劑13的第1面13a的整面積層剝離膜15。 換言之,切晶黏晶片102係基材11、膜狀接著劑13及剝離膜15依序於這些層的厚度方向上積層而構成。Figure 5 schematically illustrates a cross-sectional view of another example of a dicing wafer according to this embodiment. Die-cutting wafer 102 shown here is identical to die-cutting wafer 101 shown in Figure 4 , except that it lacks the jig adhesive layer 16 . Specifically, die-cutting wafer 102 has a film adhesive 13 deposited on the first surface 11a of substrate 11 (first surface 10a of support sheet 10), and a release film 15 deposited across the entire first surface 13a of film adhesive 13. In other words, die-cutting wafer 102 is constructed by depositing substrate 11, film adhesive 13, and release film 15 in this order throughout the thickness direction.

圖5所示之切割黏晶片102係以移除剝離膜15之狀態,於膜狀接著劑13的第1面13a中之膜狀接著劑13的寬度方向上的中央側的一部分區域貼附半導體晶圓(省略圖示)的內面,進而將膜狀接著劑13的周緣部附近的區域貼附於環狀框等治具而使用。The dicing adhesive chip 102 shown in FIG5 is in a state where the peeling film 15 is removed and a portion of the center side of the film adhesive 13 in the width direction of the film adhesive 13 is attached to the inner surface of a semiconductor wafer (not shown). The area near the periphery of the film adhesive 13 is then attached to a jig such as a ring frame for use.

本實施形態的切晶黏晶片並不限定於圖4至圖5所示之切晶黏晶片,亦可在無損本發明的效果之範圍內,將圖4至圖5所示之切晶黏晶片的一部分構成加以變更或刪除,或者對前文說明之切晶黏晶片進而追加其他構成。The die-cutting adhesive sheet of this embodiment is not limited to the die-cutting adhesive sheet shown in Figures 4 and 5. Within the scope of not impairing the effect of the present invention, part of the structure of the die-cutting adhesive sheet shown in Figures 4 and 5 can be changed or deleted, or other structures can be added to the die-cutting adhesive sheet described above.

例如,圖4至圖5所示之切割黏晶片可將不相當於基材、膜狀接著劑、及剝離膜中的任一種之其他層設置於任意部位。 作為前述其他層,例如可列舉前文所說明之黏著劑層、功能層(中間層、背面層)等。黏著劑層設置於基材11與膜狀接著劑13之間。功能層之中的中間層亦設置於基材11與膜狀接著劑13之間。功能層之中的背面層設置於基材11中之與第1面11a為相反側的面上,亦可為切割黏晶片中的最表層。For example, the dicing adhesive wafer shown in Figures 4 and 5 can have other layers that are not equivalent to any of the substrate, film-like adhesive, and peeling film arranged at any position. Examples of the aforementioned other layers include the adhesive layer and functional layers (middle layer, back layer) described above. The adhesive layer is arranged between the substrate 11 and the film-like adhesive 13. The middle layer among the functional layers is also arranged between the substrate 11 and the film-like adhesive 13. The back layer among the functional layers is arranged on the surface of the substrate 11 opposite to the first surface 11a, and can also be the outermost layer in the dicing adhesive wafer.

圖4至圖5所示之切割黏晶片中,亦可於剝離膜與直接接觸該剝離膜之層之間產生一部分間隙。 圖4至圖5所示之切割黏晶片中,各層的大小及形狀可根據目的任意調節。In the dicing adhesive wafer shown in Figures 4 and 5, a gap can also be generated between the release film and the layer directly contacting the release film. In the dicing adhesive wafer shown in Figures 4 and 5, the size and shape of each layer can be arbitrarily adjusted according to the purpose.

◇切割黏晶片的製造方法 前述切割黏晶片可藉由下述方式來製造:將上述各層以成為對應的位置關係之方式積層,並視需要調節一部分或全部的層的形狀。各層的形成方法如前文所說明。◇Method for Manufacturing Dicing Bonded Chips The aforementioned dicing bonded chips can be manufactured by stacking the aforementioned layers in a corresponding positional relationship and adjusting the shapes of some or all of the layers as needed. The formation methods of the various layers are as described above.

例如,於製造支撐片時,於基材上積層黏著劑層之情形時,只要於基材上塗敷上述之黏著劑組成物,視需要使之乾燥即可。 另外,藉由以下之方法亦能夠於基材上積層黏著劑層:於剝離膜上塗敷黏著劑組成物,視需要使之乾燥,藉此於剝離膜上預先形成黏著劑層,再使該黏著劑層的露出面與基材的一面貼合。此時,黏著劑組成物較佳為塗敷於剝離膜的剝離處理面。 至此為止,列舉了於基材上積層黏著劑層之情形為例,但上述方法例如亦可應用至於基材上積層前文所說明之功能層等其他層之情形、於基材上積層前述膜狀接著劑之情形。於積層前述膜狀接著劑之情形時,使用前述接著劑組成物。For example, when manufacturing a support sheet, when depositing an adhesive layer on a substrate, simply apply the aforementioned adhesive composition to the substrate and allow it to dry as needed. Alternatively, the adhesive layer can be deposited on the substrate by applying the adhesive composition to a release film, allowing it to dry as needed, thereby pre-forming an adhesive layer on the release film. The exposed surface of the adhesive layer is then bonded to one side of the substrate. In this case, the adhesive composition is preferably applied to the release-treated surface of the release film. While the example above illustrates the case of depositing an adhesive layer on a substrate, the above method can also be applied to depositing other layers, such as the functional layer described above, on a substrate, or depositing the aforementioned film-like adhesive on a substrate. When depositing the aforementioned film-like adhesive, the aforementioned adhesive composition is used.

另一方面,例如於已積層於基材上之最上層(以下,簡稱為「第1層」)上進而積層新的層(以下,簡稱為「第2層」)之情形時,使用用以形成前述第2層之組成物,於剝離膜上預先形成第2層,使該已形成之第2層中之與前述剝離膜接觸之側為相反側的露出面來和基材上的前述第1層的露出面貼合,藉此能夠形成連續之2層積層結構(換言之,第1層及第2層之積層結構)。此時,前述組成物較佳為塗敷於剝離膜的剝離處理面。於形成積層結構後,視需要移除剝離膜即可。於前述第2層為前述膜狀接著劑之情形時,使用前述接著劑組成物作為用以形成第2層之組成物。On the other hand, for example, when a new layer (hereinafter referred to as the "second layer") is deposited on the topmost layer already deposited on a substrate (hereinafter referred to as the "first layer"), the second layer is pre-formed on a release film using a composition for forming the second layer. The exposed surface of the formed second layer, opposite to the side in contact with the release film, is bonded to the exposed surface of the first layer on the substrate, thereby forming a continuous two-layered structure (in other words, a layered structure of the first and second layers). In this case, the composition is preferably applied to the release-treated surface of the release film. After the laminate structure is formed, the release film can be removed as needed. In the case where the second layer is the film-like adhesive, the adhesive composition is used as the composition for forming the second layer.

如此,由於構成切割黏晶片之基材以外的層均可利用預先形成於剝離膜上,再貼合於目標層的表面之方法進行積層,因此視需要適宜選擇採用此種步驟之層,製造切割黏晶片即可。In this way, since all layers other than the substrate constituting the dicing adhesive wafer can be pre-formed on a release film and then laminated on the surface of the target layer, the dicing adhesive wafer can be manufactured by appropriately selecting the layer using this step as needed.

此外,切割黏晶片通常以於該切割黏晶片中之與支撐片側為相反側的最表層(例如膜狀接著劑)的表面貼合有剝離膜之狀態來保管。因此,可藉由下述方式而獲得具剝離膜之切割黏晶片:於該剝離膜(較佳為該剝離膜的剝離處理面)上塗敷前述接著劑組成物等用以形成構成最表層之層之組成物,視需要使之乾燥,藉此於剝離膜上預先形成構成最表層之層,利用上述任一種方法於該層之與剝離膜接觸之側為相反側的露出面上積層剩餘各層,不移除剝離膜而保持貼合狀態不變。Furthermore, the dicing adhesive wafer is usually stored with a peeling film attached to the surface of the outermost layer (e.g., film adhesive) on the side opposite to the support sheet in the dicing adhesive wafer. Therefore, a dicing adhesive wafer with a release film can be obtained by applying the aforementioned adhesive composition or the like to form a composition constituting the outermost layer on the release film (preferably the release-treated surface of the release film), drying the adhesive composition as needed, thereby pre-forming the outermost layer on the release film. The remaining layers are then applied to the exposed surface of the layer opposite to the side in contact with the release film using any of the aforementioned methods, without removing the release film to maintain the bonded state.

◇半導體裝置的製造方法(切割黏晶片的使用方法) [製造方法(1)] 上述之本發明的一實施形態的切割黏晶片可於製造半導體裝置時使用。 作為該情形時的半導體裝置的製造方法,例如可列舉以下之製造方法(本說明書中,有時稱為「製造方法(1)」),具有:積層(1)步驟,係使用前述切割黏晶片製作積層體(1),前述積層體(1)係具備半導體晶圓,且於前述半導體晶圓的內面藉由前述切割黏晶片中的前述膜狀接著劑來貼附前述切割黏晶片而構成;分割/切斷步驟,係分割前述積層體(1)中的前述半導體晶圓,藉此製作半導體晶片,並沿著前述半導體晶圓的分割部位切斷前述膜狀接著劑,藉此製作具膜狀接著劑之半導體晶片集合體(1),前述具膜狀接著劑之半導體晶片集合體(1)係由具備前述半導體晶片、及設置於前述半導體晶片的內面之切斷後的前述膜狀接著劑所形成之多個具膜狀接著劑之半導體晶片保持於前述支撐片上而構成;拾取(1)步驟,係將前述具膜狀接著劑之半導體晶片集合體(1)中的具膜狀接著劑之半導體晶片自前述支撐片扯離而進行拾取,藉此取得具膜狀接著劑之半導體晶片;以及黏晶步驟,係將所取得之前述具膜狀接著劑之半導體晶片中的半導體晶片藉由前述具膜狀接著劑之半導體晶片中的膜狀接著劑來黏晶於基板的電路形成面。 製造方法(1)中,除了使用上述之本發明的一實施形態的切割黏晶片代替先前的切割黏晶片之方面以外,可利用與先前的方法相同的方法製造半導體裝置。◇Method for manufacturing semiconductor devices (method for using a dicing wafer) [Manufacturing method (1)] The dicing wafer of one embodiment of the present invention described above can be used when manufacturing semiconductor devices. As a method for manufacturing a semiconductor device in this case, for example, the following manufacturing method (sometimes referred to as "manufacturing method (1)" in this specification) can be cited, which comprises: a lamination step (1), in which a laminate (1) is manufactured using the aforementioned dicing adhesive chip, wherein the aforementioned laminate (1) has a semiconductor wafer, and the aforementioned dicing adhesive chip is attached to the inner surface of the aforementioned semiconductor wafer by the aforementioned film adhesive in the aforementioned dicing adhesive chip; a division/cutting step, in which the aforementioned semiconductor wafer in the aforementioned laminate (1) is divided to manufacture semiconductor chips, and the aforementioned film adhesive is cut along the division portion of the aforementioned semiconductor wafer to manufacture a semiconductor chip assembly (1) having a film adhesive, wherein the aforementioned The semiconductor chip assembly (1) with a film adhesive is composed of a plurality of semiconductor chips with a film adhesive formed by the aforementioned semiconductor chip and the aforementioned film adhesive provided on the inner surface of the aforementioned semiconductor chip after cutting, which are held on the aforementioned support sheet; the picking up (1) step is to pull the semiconductor chip with a film adhesive in the aforementioned semiconductor chip assembly (1) away from the aforementioned support sheet and pick it up, thereby obtaining the semiconductor chip with a film adhesive; and the die bonding step is to bond the obtained semiconductor chip in the aforementioned semiconductor chip with a film adhesive to the circuit forming surface of the substrate by means of the film adhesive in the aforementioned semiconductor chip with a film adhesive. In the manufacturing method (1), a semiconductor device can be manufactured by the same method as the previous method except that the dicing wafer of one embodiment of the present invention is used instead of the previous dicing wafer.

[積層(1)步驟] 前述積層(1)步驟中,例如將前述切割黏晶片中的前述膜狀接著劑中之與前述支撐片側為相反側的面(亦即,第1面)貼附於半導體晶圓的內面,藉此製作積層體(1)。 本步驟除了使用上述之本發明的一實施形態的切割黏晶片代替先前的切割黏晶片之方面以外,可利用與將切割黏晶片貼附於半導體晶圓的內面之先前的方法相同的方法進行。[Lamination (1) step] In the aforementioned lamination (1) step, for example, the surface of the aforementioned film adhesive in the aforementioned dicing adhesive sheet that is opposite to the aforementioned support sheet side (i.e., the first surface) is attached to the inner surface of the semiconductor wafer, thereby producing a laminate (1). This step can be performed using the same method as the previous method of attaching the dicing adhesive sheet to the inner surface of the semiconductor wafer, except that the dicing adhesive sheet of one embodiment of the present invention is used instead of the previous dicing adhesive sheet.

[分割/切斷步驟] 前述分割/切斷步驟中,進行積層體(1)中的半導體晶圓之分割(半導體晶片之製作)、及積層體(1)中的膜狀接著劑之切斷之順序並無特別限定,可按照半導體晶圓之分割及膜狀接著劑之切斷之順序進行,亦可按照膜狀接著劑之切斷及半導體晶圓之分割之順序進行,還可同時進行半導體晶圓之分割及膜狀接著劑之切斷。另外,不於同時進行半導體晶圓之分割及膜狀接著劑之切斷之情形時,半導體晶圓之分割及膜狀接著劑之切斷可連續地進行,亦可階段性地進行。[Split/cut step] In the aforementioned split/cut step, the order of splitting the semiconductor wafer in the laminate (1) (manufacturing of semiconductor chips) and cutting the film adhesive in the laminate (1) is not particularly limited. The steps may be performed in the order of splitting the semiconductor wafer and cutting the film adhesive, or in the order of cutting the film adhesive and splitting the semiconductor wafer. The splitting of the semiconductor wafer and the cutting of the film adhesive may also be performed simultaneously. In addition, when the semiconductor wafer division and the adhesive film cutting are not performed simultaneously, the semiconductor wafer division and the adhesive film cutting can be performed continuously or in stages.

半導體晶圓之分割及膜狀接著劑之切斷均可利用公知的方法進行。 例如,可藉由刀片切割、利用雷射照射之雷射切割、或利用包含研磨劑之水之噴附之水切割等各切割,連續地進行半導體晶圓之分割及膜狀接著劑之切斷。但是,這係半導體晶圓之分割方法、及膜狀接著劑之切斷方法的一例。Semiconductor wafer separation and film adhesive cutting can be performed using known methods. For example, semiconductor wafer separation and film adhesive cutting can be performed continuously using blade dicing, laser dicing using laser irradiation, or water dicing using a spray of water containing an abrasive. However, this is only one example of a method for semiconductor wafer separation and film adhesive cutting.

膜狀接著劑之切斷係沿著半導體晶圓的分割部位進行,但該情形時,於半導體晶圓之分割後切斷膜狀接著劑之情形時,膜狀接著劑之切斷係沿著半導體晶圓的分割部位、亦即半導體晶片的周緣部進行。另一方面,於半導體晶圓之分割前切斷膜狀接著劑之情形、及於半導體晶圓之分割之同時切斷膜狀接著劑之情形時,膜狀接著劑之切斷係沿著半導體晶圓的分割預定部位進行。The film adhesive is cut along the semiconductor wafer's dividing portion. However, in this case, when the film adhesive is cut after the semiconductor wafer is divided, the film adhesive is cut along the semiconductor wafer's dividing portion, that is, the periphery of the semiconductor chip. On the other hand, when the film adhesive is cut before the semiconductor wafer is divided, or when the film adhesive is cut simultaneously with the semiconductor wafer's division, the film adhesive is cut along the portion of the semiconductor wafer intended for division.

本步驟中所製作之具膜狀接著劑之半導體晶片集合體(1)係多個具膜狀接著劑之半導體晶片以整齊排列之狀態保持(固定)於原先構成前述切割黏晶片之1片前述支撐片上。The semiconductor chip assembly (1) with film adhesive produced in this step is a plurality of semiconductor chips with film adhesive held (fixed) in an orderly arranged state on the aforementioned supporting sheet that originally constitutes the aforementioned dicing and bonding chip.

[拾取(1)步驟] 前述拾取(1)步驟中,可利用公知的方法,將具膜狀接著劑之半導體晶片集合體(1)中的具膜狀接著劑之半導體晶片自支撐片扯離而進行拾取。 本步驟中,藉由使用上述之本發明的一實施形態的膜狀接著劑(切割黏晶片),即便支撐片不具備用以與膜狀接著劑直接接觸之黏著劑層,於拾取具膜狀接著劑之半導體晶片時,亦能夠抑制膜狀接著劑殘留於支撐片。[Pick-up (1) step] In the aforementioned pick-up (1) step, the semiconductor chip with a film adhesive in the semiconductor chip assembly (1) with a film adhesive can be pulled off the support sheet and picked up using a known method. In this step, by using the film adhesive (dicing adhesive chip) of one embodiment of the present invention, even if the support sheet does not have an adhesive layer for direct contact with the film adhesive, it is possible to suppress the film adhesive from remaining on the support sheet when picking up the semiconductor chip with a film adhesive.

[黏晶步驟] 前述黏晶步驟中,可利用公知的方法,將拾取後的具膜狀接著劑之半導體晶片藉由當中的膜狀接著劑來黏晶於基板的電路形成面。[Die Bonding Step] In the aforementioned die bonding step, the picked-up semiconductor chip with the film adhesive can be bonded to the circuit formation surface of the substrate using the film adhesive therein by a known method.

前述黏晶步驟後,亦可利用與先前的方法相同的方法,製造半導體封裝體及半導體裝置。例如,視需要於該經黏晶之半導體晶片進而積層1個以上之半導體晶片後,進行打線接合。繼而,使膜狀接著劑熱硬化,進而藉由樹脂將所獲得之硬化物整體進行密封。藉由經過這些步驟,能夠製作半導體封裝體。然後,使用該半導體封裝體,能夠製造目標半導體裝置。After the aforementioned die-bonding step, semiconductor packages and semiconductor devices can be manufactured using the same methods as previously described. For example, wire bonding can be performed after stacking one or more semiconductor chips on the die-bonded semiconductor chip as needed. The film adhesive is then thermally cured, and the resulting cured product is sealed with a resin. By completing these steps, a semiconductor package is produced. This semiconductor package can then be used to manufacture the desired semiconductor device.

圖6係用於以示意方式說明製造方法(1)之剖視圖。此處表示使用圖4所示之切割黏晶片101之情形時的製造方法(1)。FIG6 is a cross-sectional view for schematically illustrating the manufacturing method (1). Here, the manufacturing method (1) is shown when the dicing and bonding wafer 101 shown in FIG4 is used.

圖6A表示積層(1)步驟中所獲得之積層體(1)119A。積層體(1)119A具備半導體晶圓9、及設置於半導體晶圓9的內面9b之切割黏晶片101。 圖6B表示分割/切斷步驟中所獲得之具膜狀接著劑之半導體晶片集合體(1)119B。具膜狀接著劑之半導體晶片集合體(1)119B係由具備半導體晶片9'、及設置於半導體晶片9'的內面9b'之切斷後的膜狀接著劑130所形成之多個具膜狀接著劑之半導體晶片139'保持於支撐片10上而構成。 圖6C表示於拾取(1)步驟中使用扯離機構7沿箭頭I方向將具膜狀接著劑之半導體晶片139'自支撐片10扯離而進行拾取之狀態。作為扯離機構7,可列舉真空筒夾等。此外,此處扯離機構7未表示剖面。膜狀接著劑130於支撐片10的第1面10a之殘留得到抑制。 圖6D表示於黏晶步驟中將半導體晶片9'藉由膜狀接著劑130黏晶於基板5的電路形成面5a之狀態。FIG6A shows a laminate (1) 119A obtained in the lamination (1) step. The laminate (1) 119A comprises a semiconductor wafer 9 and a dicing adhesive chip 101 disposed on the inner surface 9b of the semiconductor wafer 9. FIG6B shows a semiconductor chip assembly (1) 119B with a film adhesive obtained in the segmentation/cutting step. The semiconductor chip assembly (1) 119B with a film adhesive is composed of a plurality of semiconductor chips 139' with a film adhesive formed by a semiconductor chip 9' and a film adhesive 130 disposed on the inner surface 9b' of the semiconductor chip 9' after cutting, and held on a support sheet 10. FIG6C shows a state in which a semiconductor chip 139' with a film adhesive is pulled away from the support sheet 10 in the direction of arrow I using a pulling mechanism 7 in the pickup (1) step. Examples of the pulling mechanism 7 include a vacuum collet chuck. The pulling mechanism 7 is not shown in cross section here. The film adhesive 130 is prevented from remaining on the first surface 10a of the support sheet 10. FIG6D shows a state in which a semiconductor chip 9' is bonded to the circuit forming surface 5a of the substrate 5 by the film adhesive 130 in the bonding step.

圖6中表示使用切割黏晶片101之情形時的製造方法(1),但使用其他切割黏晶片之情形亦可獲得相同的半導體裝置。FIG6 shows the manufacturing method (1) when using a dicing wafer 101, but the same semiconductor device can be obtained when using other dicing wafers.

[製造方法(2)] 上述之本發明的一實施形態的膜狀接著劑亦可藉由在構成上述之本發明的一實施形態的切割黏晶片之前即貼附於半導體晶圓,而於製造半導體裝置時使用。 作為該情形時的半導體裝置的製造方法,例如可列舉以下之製造方法(本說明書中,有時稱為「製造方法(2)」),具有:積層(21)步驟,係使用前述膜狀接著劑來製作積層體(21),前述積層體(21)具備半導體晶圓、及設置於前述半導體晶圓的內面之前述膜狀接著劑;積層(22)步驟,係於前述積層體(21)中的前述膜狀接著劑中之與前述半導體晶圓側為相反側的面(亦即,第2面)貼附切割片,藉此製作前述切割片及積層體(21)依序積層而構成(換言之,前述切割片、膜狀接著劑及半導體晶圓依序於這些層的厚度方向上積層而構成)之積層體(22);分割/切斷步驟,係分割前述積層體(22)中的前述半導體晶圓,藉此製作半導體晶片,並沿著前述半導體晶圓的分割部位來切斷前述膜狀接著劑,藉此製作具膜狀接著劑之半導體晶片集合體(2),前述具膜狀接著劑之半導體晶片集合體(2)係由具備前述半導體晶片、及設置於前述半導體晶片的內面之切斷後的前述膜狀接著劑所形成之多個具膜狀接著劑之半導體晶片保持於前述切割片上而構成;拾取(2)步驟,係將前述具膜狀接著劑之半導體晶片集合體(2)中的具膜狀接著劑之半導體晶片自前述切割片扯離而進行拾取,藉此取得具膜狀接著劑之半導體晶片;以及黏晶步驟,係將所取得之前述具膜狀接著劑之半導體晶片中的半導體晶片藉由前述具膜狀接著劑之半導體晶片中的膜狀接著劑來黏晶於基板的電路形成面。 製造方法(2)中,除了使用上述之本發明的一實施形態的膜狀接著劑代替先前的膜狀接著劑之方面以外,可利用與先前的方法相同的方法來製造半導體裝置。[Manufacturing method (2)] The film adhesive of one embodiment of the present invention can also be used in manufacturing a semiconductor device by attaching it to a semiconductor wafer before forming a dicing die of the embodiment of the present invention. As a manufacturing method of a semiconductor device in this case, for example, the following manufacturing method (sometimes referred to as "manufacturing method (2)" in this specification) can be listed, which comprises: a lamination step (21) of using the film adhesive to manufacture a laminate (21), wherein the laminate (21) comprises a semiconductor wafer and the film adhesive disposed on the inner surface of the semiconductor wafer; a lamination step (22) of laminating the laminate (21) A cutting sheet is attached to the surface (i.e., the second surface) of the aforementioned film adhesive in the opposite side to the aforementioned semiconductor wafer side, thereby producing a laminate (22) in which the aforementioned cutting sheet and the laminate (21) are sequentially laminated (in other words, the aforementioned cutting sheet, the film adhesive and the semiconductor wafer are sequentially laminated in the thickness direction of these layers); a splitting/cutting step is to split the aforementioned semiconductor wafer in the aforementioned laminate (22), thereby A semiconductor chip is manufactured and the film adhesive is cut along the division portion of the semiconductor wafer to manufacture a semiconductor chip assembly (2) with a film adhesive. The semiconductor chip assembly (2) with a film adhesive is composed of a plurality of semiconductor chips with a film adhesive formed by the semiconductor chip and the cut film adhesive disposed on the inner surface of the semiconductor chip and held on the cutting sheet. ; the picking up step (2) is to pull the film-bonded semiconductor chip in the aforementioned film-bonded semiconductor chip assembly (2) away from the aforementioned dicing sheet and pick it up, thereby obtaining the film-bonded semiconductor chip; and the die bonding step is to bond the obtained semiconductor chip in the aforementioned film-bonded semiconductor chip to the circuit forming surface of the substrate using the film adhesive in the aforementioned film-bonded semiconductor chip. In the manufacturing method (2), except for using the film adhesive of one embodiment of the present invention instead of the previous film adhesive, the semiconductor device can be manufactured using the same method as the previous method.

[積層(21)步驟] 前述積層(21)步驟中,將前述膜狀接著劑的一面(亦即,第1面)貼附於半導體晶圓的內面,藉此製作積層體(21)。 本步驟除了使用上述之本發明的一實施形態的膜狀接著劑代替先前的膜狀接著劑之方面以外,可利用與將膜狀接著劑貼附於半導體晶圓的內面之先前的方法相同的方法進行。[Lamination (21) Step] In the aforementioned lamination (21) step, one side (i.e., the first side) of the aforementioned film adhesive is attached to the inner surface of the semiconductor wafer, thereby producing a laminate (21). This step can be performed using the same method as the previous method of attaching the film adhesive to the inner surface of the semiconductor wafer, except that the film adhesive of one embodiment of the present invention is used instead of the previous film adhesive.

[積層(22)步驟] 前述積層(22)步驟中,於前述積層體(21)中的膜狀接著劑的露出面(亦即,第2面)貼附切割片,藉此能夠製作積層體(22)。 本步驟中所使用之切割片可為公知的切割片,可利用公知的方法將切割片貼附於膜狀接著劑。[Lamination (22) Step] In the aforementioned lamination (22) step, a cutting sheet is attached to the exposed surface (i.e., the second surface) of the film adhesive in the aforementioned laminate (21), thereby producing the laminate (22). The cutting sheet used in this step can be a known cutting sheet, and the cutting sheet can be attached to the film adhesive using known methods.

前述切割片與製造方法(1)中所使用之切割黏晶片中的支撐片實質上相同。因此,本步驟中所獲得之積層體(22)與製造方法(1)中所獲得之積層體(1)實質上相同。The aforementioned dicing sheet is substantially the same as the support sheet used in the dicing adhesive wafer used in the manufacturing method (1). Therefore, the laminate (22) obtained in this step is substantially the same as the laminate (1) obtained in the manufacturing method (1).

[分割/切斷步驟] 前述分割/切斷步驟中,積層體(22)中的半導體晶圓之分割(半導體晶片之製作)、及積層體(22)中的膜狀接著劑之切斷可利用與製造方法(1)中的積層體(1)中的半導體晶圓之分割、及積層體(1)中的膜狀接著劑之切斷之情形相同的內容進行。[Division/cutting step] In the aforementioned division/cutting step, the division of the semiconductor wafer in the laminate (22) (manufacturing of semiconductor chips) and the cutting of the film adhesive in the laminate (22) can be performed in the same manner as the division of the semiconductor wafer in the laminate (1) and the cutting of the film adhesive in the laminate (1) in the manufacturing method (1).

本步驟中所製作之具膜狀接著劑之半導體晶片與製造方法(1)之分割/切斷步驟中所製作之具膜狀接著劑之半導體晶片相同。 本步驟中所製作之具膜狀接著劑之半導體晶片集合體(2)中,多個具膜狀接著劑之半導體晶片以整齊排列之狀態保持(固定)於前述切割片上。並且,具膜狀接著劑之半導體晶片集合體(2)與製造方法(1)之分割/切斷步驟中所製作之具膜狀接著劑之半導體晶片集合體(1)實質上相同。The semiconductor chip with a film adhesive produced in this step is the same as the semiconductor chip with a film adhesive produced in the dividing/cutting step of the manufacturing method (1). In the semiconductor chip assembly (2) with a film adhesive produced in this step, a plurality of semiconductor chips with a film adhesive are held (fixed) on the aforementioned dicing sheet in an orderly arranged state. Furthermore, the semiconductor chip assembly (2) with a film adhesive is substantially the same as the semiconductor chip assembly (1) with a film adhesive produced in the dividing/cutting step of the manufacturing method (1).

[拾取(2)步驟] 前述拾取(2)步驟中,可利用公知的方法,將具膜狀接著劑之半導體晶片集合體(2)中的具膜狀接著劑之半導體晶片自切割片扯離而進行拾取。 拾取(2)步驟除了使用具膜狀接著劑之半導體晶片集合體(2)代替具膜狀接著劑之半導體晶片集合體(1)之方面以外,可利用與製造方法(1)中的拾取(1)步驟之情形相同的方法進行。[Pick-up (2) step] In the aforementioned pick-up (2) step, the semiconductor chip with a film adhesive in the semiconductor chip assembly with a film adhesive (2) can be pulled off from the dicing sheet and picked up by a known method. The pick-up (2) step can be performed by the same method as the pick-up (1) step in the manufacturing method (1), except that the semiconductor chip assembly with a film adhesive (2) is used instead of the semiconductor chip assembly with a film adhesive (1).

本步驟中,藉由使用上述之本發明的一實施形態的膜狀接著劑,即便切割片不具備用以與膜狀接著劑直接接觸之黏著劑層,於拾取具膜狀接著劑之半導體晶片時,亦能夠抑制膜狀接著劑殘留於切割片。In this step, by using the film adhesive of one embodiment of the present invention, even if the dicing wafer does not have an adhesive layer for direct contact with the film adhesive, it is possible to suppress the film adhesive from remaining on the dicing wafer when picking up a semiconductor wafer with the film adhesive.

[黏晶步驟] 前述黏晶步驟與製造方法(1)中的黏晶步驟相同。[Die bonding step] The above-mentioned die bonding step is the same as the die bonding step in the manufacturing method (1).

前述黏晶步驟後,藉由與製造方法(1)之情形相同的方法,亦能夠製造半導體封裝體及半導體裝置。After the die bonding step, a semiconductor package and a semiconductor device can be manufactured by the same method as in the manufacturing method (1).

圖7係用於以示意方式說明製造方法(2)之剖視圖。此處表示使用圖3所示之膜狀接著劑13之情形時的製造方法(2)。FIG7 is a cross-sectional view for schematically illustrating the manufacturing method (2). Here, the manufacturing method (2) is shown when the film adhesive 13 shown in FIG3 is used.

圖7A表示積層(21)步驟中所獲得之積層體(21)129A。積層體(21)129A具備半導體晶圓9、及設置於半導體晶圓9的內面9b之膜狀接著劑13。 圖7B表示積層(22)步驟中所獲得之積層體(22)129B。積層體(22)129B係切割片20、膜狀接著劑13及半導體晶圓9依序於這些層的厚度方向上積層而構成。 圖7C表示分割/切斷步驟中所獲得之具膜狀接著劑之半導體晶片集合體(2)129C。具膜狀接著劑之半導體晶片集合體(2)129C係由具備半導體晶片9'、及設置於半導體晶片9'的內面9b'之切斷後的膜狀接著劑130所形成之多個具膜狀接著劑之半導體晶片139'保持於切割片20上而構成。 圖7D表示於拾取(2)步驟中使用扯離機構7沿箭頭I方向將具膜狀接著劑之半導體晶片139'自切割片20扯離而進行拾取之狀態。膜狀接著劑130於切割片20的第1面20a之殘留得到抑制。 圖7E表示於黏晶步驟中將半導體晶片9'藉由膜狀接著劑130來黏晶於基板5的電路形成面5a之狀態。 [實施例]FIG7A shows a laminate (21) 129A obtained in the lamination step (21). The laminate (21) 129A comprises a semiconductor wafer 9 and a film adhesive 13 disposed on the inner surface 9b of the semiconductor wafer 9. FIG7B shows a laminate (22) 129B obtained in the lamination step (22). The laminate (22) 129B is formed by laminating a dicing sheet 20, a film adhesive 13, and a semiconductor wafer 9 in this order in the thickness direction of these layers. FIG7C shows a semiconductor chip assembly (2) 129C having a film adhesive obtained in the segmentation/cutting step. The semiconductor chip assembly (2) 129C with a film adhesive is composed of a plurality of semiconductor chips 139' with a film adhesive formed by a semiconductor chip 9' and a film adhesive 130 provided on the inner surface 9b' of the semiconductor chip 9' after cutting, and is held on the dicing sheet 20. Figure 7D shows the state in which the semiconductor chip 139' with a film adhesive is pulled away from the dicing sheet 20 in the direction of arrow I using the pulling mechanism 7 in the picking (2) step. The residue of the film adhesive 130 on the first surface 20a of the dicing sheet 20 is suppressed. FIG7E shows the state in which the semiconductor chip 9' is bonded to the circuit-forming surface 5a of the substrate 5 via a film-like adhesive 130 during the die bonding step. [Embodiment]

以下,藉由具體的實施例對本發明更詳細地進行說明。但是,本發明完全不受限於以下所示之實施例。The present invention will be described in more detail below with reference to specific embodiments. However, the present invention is not limited to the embodiments shown below.

[樹脂的製造原料] 以下表示本實施例及比較例中簡稱之樹脂的製造原料的正式名稱。 BA:丙烯酸正丁酯 MA:丙烯酸甲酯 GMA:甲基丙烯酸縮水甘油酯 HEA:丙烯酸2-羥基乙酯 MMA:甲基丙烯酸甲酯 AA:丙烯酸[Resin Raw Materials] The following are the formal names of the resin raw materials referred to in the Examples and Comparative Examples. BA: n-butyl acrylate MA: methyl acrylate GMA: glycidyl methacrylate HEA: 2-hydroxyethyl acrylate MMA: methyl methacrylate AA: acrylic acid

[接著劑組成物的製造原料] 以下表示用以製造接著劑組成物之原料。 [聚合物成分(a)] (a)-1:使BA(55質量份)、MA(10質量份)、GMA(20質量份)及HEA(15質量份)共聚而獲得之丙烯酸樹脂(重量平均分子量800000、玻璃轉移溫度-28℃)。 (a)-2:使BA(84質量份)、MMA(8質量份)、AA(3質量份)及HEA(5質量份)共聚而獲得之丙烯酸樹脂(重量平均分子量800000、玻璃轉移溫度-42℃)。 (a)-3:重量平均分子量700000之丙烯酸樹脂。 [環氧樹脂(b1)] (b1)-1:液狀雙酚A型環氧樹脂及丙烯酸橡膠微粒子之混合物(日本觸媒公司製造的「BPA328」,環氧當量235g/eq) (b1)-2:雙酚A型環氧樹脂(三菱化學公司製造的「jER1055」,軟化點93℃、環氧當量800g/eq至900g/eq) (b1)-3:鄰甲酚酚醛清漆型環氧樹脂(日本化藥公司製造的「EOCN-104S」,軟化點90℃至94℃、環氧當量213g/eq至223g/eq) (b1)-4:液狀雙酚F型環氧樹脂(三菱化學公司製造的「YL983U」,環氧當量165g/eq至175g/eq) (b1)-5:鄰甲酚酚醛清漆型環氧樹脂(日本化藥公司製造的「EOCN-102S」,軟化點55℃至77℃、環氧當量205g/eq至217g/eq) (b1)-6:聯三伸苯型環氧樹脂(日本化藥公司製造的「EPPN-502H」,軟化點54℃、環氧當量167g/eq) (b1)-7:液狀雙酚A型環氧樹脂(三菱化學公司製造的「jER828」,環氧當量184g/eq至194g/eq) (b1)-8:鄰甲酚酚醛清漆型環氧樹脂(日本化藥公司製造的「EOCN-103S」,軟化點81℃至85℃、環氧當量209g/eq至219g/eq) (b1)-9:二環戊二烯型環氧樹脂(日本化藥公司製造的「XD-1000」,軟化點68℃至78℃、環氧當量245g/eq至260g/eq) (b1)-10:二環戊二烯型環氧樹脂(DIC公司製造的「EPICLON HP-7200HH」,軟化點88℃至98℃、環氧當量274g/eq至286g/eq) [熱硬化劑(b2)] (b2)-1:雙氰胺(ADEKA公司製造的「Adeka Hardener EH-3636AS」,固體分散型潛伏性硬化劑、軟化點209℃、活性氫量21g/eq) (b2)-2:鄰甲酚酚醛清漆樹脂(DIC公司製造的「Phenolite KA-1160」,軟化點80℃、羥基當量117g/eq) [硬化促進劑(c)] (c)-1:2-苯基-4,5-二羥基甲基咪唑(四國化成工業公司製造的「Curezol 2PHZ-PW」) [填充材料(d)] (d)-1:經環氧基修飾之球狀二氧化矽(Admatechs公司製造的「ADMANANO YA050C-MKK」,平均粒徑50nm) [偶合劑(e)] (e)-1:使3-縮水甘油氧基丙基三甲氧基矽烷加成而成之矽酸鹽化合物(三菱化學公司製造的「MKC Silicate MSEP-2」) (e)-2:具有環氧基、甲基及甲氧基基之低聚物型矽烷偶合劑(Shin-Etsu Silicones公司製造的「X-41-1056」,環氧當量280g/eq) [交聯劑(f)] (f)-1:三羥甲基丙烷之甲苯二異氰酸酯三聚物加成物(東曹公司製造的「Coronate L」) [能量線硬化性樹脂(g)] (g)-1:二季戊四醇六丙烯酸酯(6官能紫外線硬化性化合物、分子量578)及二季戊四醇五丙烯酸酯(5官能紫外線硬化性化合物、分子量525)之混合物(日本化藥公司製造的「KAYARAD DPHA」) (g)-2:三環癸烷二羥甲基二丙烯酸酯(日本化藥公司製造的「KAYARAD R-684」,分子量304) [光聚合起始劑(h)] (h)-1:1-羥基環己基苯基酮(BASF公司製造的「IRGACURE(註冊商標)184」)[Raw Materials for Adhesive Composition Production] The following are the raw materials used to produce the adhesive composition. [Polymer Component (a)] (a)-1: Acrylic resin (weight-average molecular weight 800,000, glass transition temperature -28°C) obtained by copolymerizing BA (55 parts by mass), MA (10 parts by mass), GMA (20 parts by mass), and HEA (15 parts by mass). (a)-2: Acrylic resin (weight-average molecular weight 800,000, glass transition temperature -42°C) obtained by copolymerizing BA (84 parts by mass), MMA (8 parts by mass), AA (3 parts by mass), and HEA (5 parts by mass). (a)-3: Acrylic resin with a weight-average molecular weight of 700,000. [Epoxy resin (b1)] (b1)-1: A mixture of liquid bisphenol A epoxy resin and acrylic rubber particles ("BPA328" manufactured by Japan Catalyst Co., Ltd., epoxy equivalent weight 235 g/eq) (b1)-2: Bisphenol A epoxy resin ("jER1055" manufactured by Mitsubishi Chemical Corporation, softening point 93°C, epoxy equivalent weight 800 g/eq to 900 g/eq) (b1)-3: o-cresol novolac epoxy resin (Japan (EOCN-104S manufactured by Nippon Kayaku Co., Ltd., softening point 90°C to 94°C, epoxy equivalent weight 213g/eq to 223g/eq) (b1)-4: Liquid bisphenol F epoxy resin (YL983U manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent weight 165g/eq to 175g/eq) (b1)-5: o-Cresol novolac epoxy resin (EOCN-102S manufactured by Nippon Kayaku Co., Ltd., softening point 55°C to 7 7°C, epoxy equivalent weight 205 g/eq to 217 g/eq) (b1)-6: Trisphenol-based epoxy resin ("EPPN-502H" manufactured by Nippon Kayaku Co., Ltd., softening point 54°C, epoxy equivalent weight 167 g/eq) (b1)-7: Liquid bisphenol A epoxy resin ("jER828" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent weight 184 g/eq to 194 g/eq) (b1)-8: o-cresol novolac epoxy resin ("EOCN-103S" manufactured by Nippon Kayaku Co., Ltd., softening point 81°C to 85°C, epoxy equivalent weight 209g/eq to 219g/eq) (b1)-9: Dicyclopentadiene epoxy resin ("XD-1000" manufactured by Nippon Kayaku Co., Ltd., softening point 68°C to 78°C, epoxy equivalent weight 245g/eq to 260g/eq) (b1)-10: Dicyclopentadiene epoxy resin ("EPICLON" manufactured by DIC Corporation) HP-7200HH, softening point 88°C to 98°C, epoxy equivalent weight 274g/eq to 286g/eq) [Thermohardener (b2)] (b2)-1: Dicyandiamide (Adeka Hardener EH-3636AS, manufactured by ADEKA Corporation, solid dispersion type latent hardener, softening point 209°C, active hydrogen content 21g/eq) (b2)-2: o-Cresol novolac resin (DIC Corporation, Phenolite KA-1160, softening point 80°C, hydroxyl equivalent weight 117g/eq) [Hardening accelerator (c)] (c)-1: 2-phenyl-4,5-dihydroxymethylimidazole (Shikoku Chemical Industries, Ltd., Curezol 2PHZ-PW”) [Filler (d)] (d)-1: Epoxy-modified spherical silica (Admatechs "ADMANANO YA050C-MKK", average particle size 50 nm) [Coupling agent (e)] (e)-1: Silicate compound formed by adding 3-glycidyloxypropyltrimethoxysilane (Mitsubishi Chemical Corporation "MKC Silicate MSEP-2") (e)-2: Oligomer-type silane coupling agent with epoxy, methyl, and methoxy groups (Shin-Etsu "X-41-1056" manufactured by Silicones, epoxy equivalent weight 280 g/eq) [Crosslinking agent (f)] (f)-1: Trihydroxymethylpropane-toluene diisocyanate trimer adduct ("Coronate L" manufactured by Tosoh Corporation) [Energy ray curing resin (g)] (g)-1: A mixture of dipentaerythritol hexaacrylate (a hexafunctional UV-curable compound with a molecular weight of 578) and dipentaerythritol pentaacrylate (a pentafunctional UV-curable compound with a molecular weight of 525) ("KAYARAD DPHA" manufactured by Nippon Kayaku Co., Ltd.) (g)-2: Tricyclodecane dihydroxymethyl diacrylate ("KAYARAD R-684, molecular weight 304) [Photopolymerization initiator (h)] (h)-1: 1-Hydroxycyclohexylphenyl ketone ("IRGACURE (registered trademark) 184" manufactured by BASF)

[實施例1] [膜狀接著劑之製造] [接著劑組成物之製造] 使聚合物成分(a)-1(20質量份)、環氧樹脂(b1)-1(25質量份)、環氧樹脂(b1)-2(35質量份)、環氧樹脂(b1)-3(8質量份)、熱硬化劑(b2)-1(1.5質量份)、硬化促進劑(c)-1(1.5質量份)、偶合劑(e)-1(0.6質量份)、交聯劑(f)-1(0.2質量份)、能量線硬化性樹脂(g)-1(8質量份)、及光聚合起始劑(h)-1(0.2質量份)溶解或分散於甲基乙基酮中,於23℃進行攪拌,藉此製造溶媒以外的全部成分的合計濃度為50質量%之熱硬化性之接著劑組成物。此外,此處所示之前述溶媒以外的成分的調配量全部為不含溶媒之目標物的調配量。[Example 1] [Preparation of Film Adhesive] [Preparation of Adhesive Composition] Polymer component (a)-1 (20 parts by mass), epoxy resin (b1)-1 (25 parts by mass), epoxy resin (b1)-2 (35 parts by mass), epoxy resin (b1)-3 (8 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), curing accelerator (c)-1 (1.5 parts by mass), A coupling agent (e)-1 (0.6 parts by mass), a crosslinking agent (f)-1 (0.2 parts by mass), an energy-ray-curable resin (g)-1 (8 parts by mass), and a photopolymerization initiator (h)-1 (0.2 parts by mass) were dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to produce a thermosetting adhesive composition having a total concentration of 50% by mass of all components other than the solvent. The amounts of the components other than the solvent listed here are all amounts for the target product without the solvent.

[膜狀接著劑之製造] 使用聚對苯二甲酸乙二酯製膜的單面藉由聚矽氧處理進行了剝離處理之剝離膜(琳得科公司製造的「SP-PET381031」,厚度38μm),於前述剝離膜的前述剝離處理面塗敷上述所獲得之接著劑組成物,於100℃乾燥1分鐘,藉此製造厚度20μm之熱硬化性之膜狀接著劑。[Manufacturing of Film-like Adhesive] A release film made of polyethylene terephthalate (SP-PET381031, manufactured by Lintec, 38 μm thick) with one side treated with silicone was used. The adhesive composition obtained above was applied to the release-treated surface of the release film and dried at 100°C for 1 minute to produce a 20 μm thick thermosetting film-like adhesive.

[切割黏晶片之製造] 使用由聚丙烯(PP)所構成之層與由乙烯-甲基丙烯酸共聚物(EMAA)所構成之層經積層而構成之積層基材(Achilles公司製造的「HUSL1302」,厚度100μm,以下有時稱為「PP/EMAA積層基材」)作為基材,於由聚丙烯所構成之層的表面貼合上述所獲得之膜狀接著劑中之與具備剝離膜之側為相反側的露出面,藉此製造切割黏晶片。該切割黏晶片係僅由基材所構成之支撐片、膜狀接著劑、及剝離膜依序於這些層的厚度方向上積層而構成之具剝離膜之切割黏晶片。[Manufacturing of Dicing Adhesive Sheets] A laminated substrate ("HUSL1302" manufactured by Achilles, 100μm thick, sometimes referred to as the "PP/EMAA laminated substrate") is used as the substrate. The exposed side of the film-like adhesive obtained above, opposite to the side with the release film, is attached to the surface of the polypropylene layer to produce the dicing adhesive sheet. This dicing adhesive sheet is composed solely of a support sheet made of the substrate, a film-like adhesive, and a release film, laminated in this order along the thickness direction of these layers.

[膜狀接著劑之評價] [D0 之測定] [第1試片之製作] 利用與上述相同的方法,製造2片的於一面具備剝離膜之膜狀接著劑。 繼而,使用紫外線照射裝置(琳得科公司製造的「RAD-2000 m/12」),於照度230mW/cm2 、光量120mJ/cm2 之條件下,對這些2片膜狀接著劑照射紫外線。 繼而,使照射過紫外線之這些2片膜狀接著劑的露出面彼此貼合,藉此製作厚度為40μm且於雙面具備剝離膜之2片膜狀接著劑之積層物(1次積層物)。然後,製作2片該1次積層物。[Evaluation of Film Adhesive] [Determination of D0 ] [Preparation of First Test Piece] Using the same method as above, two sheets of film adhesive were prepared, each with a release film on one side. These two sheets were then irradiated with UV light using a UV irradiation device ("RAD-2000 m/12" manufactured by Lintec) at an illuminance of 230 mW/ cm² and a light dose of 120 mJ/ cm² . The exposed surfaces of the two UV-irradiated sheets were then bonded together to form a 40 μm thick laminate of two films with release films on both sides (primary laminate). Then, make two sheets of this primary layer.

繼而,自這些2片的1次積層物的一面移除剝離膜,使新產生之膜狀接著劑的露出面彼此貼合,藉此製作厚度為80μm且於雙面具備剝離膜之4片膜狀接著劑之積層物(2次積層物)。然後,製作2片該2次積層物。 繼而,自這些2片的2次積層物的一面移除剝離膜,使新產生之膜狀接著劑的露出面彼此貼合,藉此製作厚度為160μm且於雙面具備剝離膜之8片膜狀接著劑之積層物(3次積層物)。 繼而,使用該3次積層物、及另行製作之前述1次積層物,自這些積層物的一面移除剝離膜,使新產生之膜狀接著劑的露出面彼此貼合,藉此製作厚度為200μm且於雙面具備剝離膜之10片膜狀接著劑之積層物(4次積層物)。Next, the release film was removed from one side of these two primary laminates, and the exposed surfaces of the newly formed film adhesive were bonded together, thereby producing four film adhesive laminates (secondary laminates) with a thickness of 80 μm and release films on both sides. Two more secondary laminates were then produced. Next, the release film was removed from one side of these two secondary laminates, and the exposed surfaces of the newly formed film adhesive were bonded together, thereby producing eight film adhesive laminates (tertiary laminates) with a thickness of 160 μm and release films on both sides. Next, using this tertiary laminate and the previously described primary laminate, the release film was removed from one side of these laminates, and the exposed surfaces of the newly produced film adhesive were bonded together. This produced 10 film adhesive laminates (quadruple laminates) with a thickness of 200 μm and release films on both sides.

使用啞鈴切割機(DUMBBELL公司製造的「SDBK-1000」),以與JIS K7128-3中所規定之試片相同的形狀及尺寸,衝壓上述所獲得之4次積層物,藉此製作第1試片(厚度200μm)。The obtained quadruple laminate was punched out using a dumbbell cutting machine ("SDBK-1000" manufactured by DUMBBELL) in the same shape and size as the test piece specified in JIS K7128-3 to produce the first test piece (thickness 200 μm).

[D0 之測定] 使用萬能拉伸試驗機(島津製作所公司製造的「AG-IS」),依據JIS K7128-3,對上述所獲得之第1試片進行撕裂試驗,測定D0 。此時,第1試片中的夾具間的距離設為60mm、撕裂速度設為200mm/min、採樣時間設為10ms。結果表示於表1。[D 0 Determination] The first specimen obtained above was subjected to a tear test in accordance with JIS K7128-3 using a universal tensile testing machine ("AG-IS" manufactured by Shimadzu Corporation) to determine D 0 . The distance between the clamps in the first specimen was set to 60 mm, the tear rate was set to 200 mm/min, and the sampling time was set to 10 ms. The results are shown in Table 1.

[|ΔT|之算出] 於上述之D0 之測定時,同時測定Tmax 、D1 及0.6D1 ,根據這些值算出|ΔT|。結果表示於表1。[Calculation of |ΔT|] When measuring D 0 as described above, T max , D 1 , and 0.6D 1 were measured simultaneously, and |ΔT| was calculated based on these values. The results are shown in Table 1.

[抑制拾取時膜狀接著劑殘留之效果之評價] [具膜狀接著劑之矽晶片之製造] 自上述所獲得之切割黏晶片中的膜狀接著劑移除剝離膜。 使用貼帶機(琳得科公司製造的「Adwill RAD2500」),於內面成為#2000研磨面之矽晶圓(直徑200mm、厚度350μm)的前述研磨面,貼合移除剝離膜後的切割黏晶片中的膜狀接著劑的露出面。然後,將切割黏晶片固定於晶圓切割用環狀框。[Evaluation of the Effectiveness of Suppressing Film Adhesive Residue During Pickup] [Production of Silicon Wafers with Film Adhesive] The peeling film was removed from the film adhesive on the dicing wafer obtained above. Using a laminating machine ("Adwill RAD2500" manufactured by Lintec), the exposed surface of the film adhesive on the dicing wafer after the peeling film was removed was bonded to the polished surface of a silicon wafer (200 mm diameter, 350 μm thickness) with a #2000 internal polish. The dicing wafer was then secured to a wafer dicing ring frame.

繼而,使用紫外線照射裝置(琳得科公司製造的「RAD-2000 m/12」),於照度230mW/cm2 、光量120mJ/cm2 之條件下,對膜狀接著劑照射紫外線。Next, the film-shaped adhesive was irradiated with ultraviolet light using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation) at an illumination of 230 mW/cm 2 and a light dose of 120 mJ/cm 2 .

繼而,使用切割裝置(DISCO公司製造的「DFD6361」)進行切割,藉此連續地進行矽晶圓之分割、及膜狀接著劑之切斷,獲得大小為2mm×2mm之矽晶片。此時的切割係藉由下述方式進行:將切割刀片的移動速度設為30mm/sec、切割刀片的轉速設為30000rpm,對切割黏晶片利用切割刀片切入直至距離該切割黏晶片之基材之膜狀接著劑的貼附面20μm之深度之區域(亦即,直至膜狀接著劑的厚度方向的整個區域、及距離基材之膜狀接著劑側的面20μm之深度的區域)。作為切割刀片,使用DISCO公司製造的「Z05-SD2000-D1-90 CC」。 藉由以上步驟,使用切割黏晶片,製造具膜狀接著劑之矽晶片群,前述具膜狀接著劑之矽晶片群係由具備矽晶片、及設置於前述矽晶片的內面之膜狀接著劑而構成之多個具膜狀接著劑之矽晶片藉由前述膜狀接著劑以整齊排列之狀態固定於基材上。Next, a dicing device ("DFD6361" manufactured by DISCO) was used to continuously separate the silicon wafer and cut the film adhesive, obtaining silicon wafers measuring 2 mm x 2 mm. The dicing was performed by setting the dicing blade's travel speed to 30 mm/sec and its rotational speed to 30,000 rpm. The dicing blade cut into the wafer to a depth of 20 μm from the film adhesive bonding surface of the wafer's substrate (i.e., the entire thickness of the film adhesive and a depth of 20 μm from the film adhesive side of the substrate). The dicing blade used was the "Z05-SD2000-D1-90 CC" manufactured by DISCO. Through the above steps, a group of silicon wafers with film adhesive is manufactured using a dicing adhesive wafer. The group of silicon wafers with film adhesive is composed of a silicon wafer and a film adhesive disposed on the inner surface of the silicon wafer. The plurality of silicon wafers with film adhesive are fixed on a substrate in an orderly arranged state by the film adhesive.

[抑制拾取時膜狀接著劑殘留之效果之評價] 使用拾取-黏晶裝置(Canon Machinery公司製造的「BESTEM D-02」),將上述所獲得之具膜狀接著劑之矽晶片群中的具膜狀接著劑之矽晶片自基材扯離而進行拾取。該拾取係對100個具膜狀接著劑之矽晶片進行,且以將1個具膜狀接著劑之矽晶片自膜狀接著劑側藉由1根頂銷頂起之方式進行。 繼而,使用數位顯微鏡(基恩士公司製造的「VHX-1000」),觀察支撐片(基材)上的拾取部位,計數殘留有100μm以上之長度的膜狀接著劑的部位,依據下述基準,評價抑制拾取時膜狀接著劑殘留之效果。結果表示於表1。表1中,相應欄內的括號內的數值係殘留有上述之膜狀接著劑之部位的數量。 [評價基準] A:膜狀接著劑的殘留部位為5部位以下。 B:膜狀接著劑的殘留部位為6部位以上。[Evaluation of the Effect of Suppressing Film Adhesive Residue During Pickup] Using a pick-and-bond device ("BESTEM D-02" manufactured by Canon Machinery), the film-coated silicon wafers obtained above were separated from the substrate and picked up. This picking-up was performed on 100 film-coated silicon wafers, with each film-coated silicon wafer being lifted from the film side using a lift pin. Next, using a digital microscope (Keyence VHX-1000), the pick-up locations on the support sheet (substrate) were observed. The number of locations where film adhesive residues of 100 μm or more were counted. The effectiveness of suppressing film adhesive residue during pick-up was evaluated based on the following criteria. The results are shown in Table 1. The parenthesized values within the corresponding columns in Table 1 represent the number of locations where the film adhesive residues were present. [Evaluation Criteria] A: 5 or fewer locations with film adhesive residues. B: 6 or more locations with film adhesive residues.

[膜狀接著劑之硬化物的接著力之測定] [具膜狀接著劑之矽晶片之製造] 利用與上述之「抑制拾取時膜狀接著劑殘留之效果之評價」之情形相同的方法,製造具膜狀接著劑之矽晶片群。[Measurement of Adhesion Strength of Cured Film Adhesives] [Manufacturing of Silicon Wafers with Film Adhesives] A group of silicon wafers with film adhesives were manufactured using the same method as described above for "Evaluation of the Effectiveness of Suppressing Film Adhesive Residue During Pickup."

[第2試片之製作] 繼而,將具膜狀接著劑之矽晶片群中的具膜狀接著劑之矽晶片自基材扯離而進行拾取。然後,使用手動黏晶機(CAMMAX Precima公司製造的「EDB65」),將該具膜狀接著劑之矽晶片中的膜狀接著劑的露出面(與矽晶片側為相反側的面)整面壓接於銅板(厚度500μm)的表面,藉此將具膜狀接著劑之矽晶片黏晶於前述銅板上。此時的黏晶係藉由下述方式進行:針對加熱至125℃之具膜狀接著劑之矽晶片,沿相對於該具膜狀接著劑之矽晶片與前述銅板之接觸面呈正交之方向,施加2.45N(250gf)之力3秒。 繼而,將黏晶後的銅板於160℃加熱1小時,藉此使該銅板上的膜狀接著劑熱硬化。 藉由以上步驟,製作銅板、膜狀接著劑之硬化物、及矽晶片依序於這些層的厚度方向上積層而構成之第2試片。[Preparation of the Second Test Piece] Next, a film-bonded silicon wafer from the group of film-bonded silicon wafers was removed from the substrate and picked up. Then, using a manual die bonder (CAMMAX Precima "EDB65"), the entire surface of the film-bonded silicon wafer (the surface opposite the silicon wafer) with the exposed film adhesive was press-bonded to the surface of a copper plate (500 μm thick), thereby bonding the film-bonded silicon wafer to the copper plate. Die bonding was performed as follows: A force of 2.45 N (250 gf) was applied to the silicon wafer with film adhesive heated to 125°C for 3 seconds in a direction perpendicular to the contact surface between the wafer and the copper plate. Then, the bonded copper plate was heated at 160°C for 1 hour to thermally cure the film adhesive on the copper plate. Through these steps, a second test piece was produced, consisting of a copper plate, a cured film adhesive, and a silicon wafer stacked sequentially along the thickness direction.

[膜狀接著劑之熱硬化物的接著力之測定] 使用黏結強度試驗機(Dage公司製造的「Series 4000」),對上述所獲得之第2試片中的膜狀接著劑之硬化物的側面與矽晶片的側面經對位之部位,同時沿相對於前述硬化物的一面呈平行的方向,以200μm/sec之速度施加力。此時,作為用以施加力之按壓機構,使用不銹鋼製之平板狀的按壓機構,將按壓機構之銅板側的前端的位置調節為自銅板之搭載有矽晶片之側的表面起7μm之高度,藉此使得按壓機構接觸於銅板。然後,測定直至前述硬化物遭到破壞、或前述硬化物自銅板剝離、或前述硬化物自矽晶片剝離為止所施加之力的最大值,採用該測定值作為前述硬化物的接著力(N/2mm□)。結果表示於表1。[Measurement of the Adhesion Strength of Thermally Cured Film Adhesives] Using a bond strength tester ("Series 4000" manufactured by Dage), a force was applied simultaneously at a rate of 200 μm/sec in a direction parallel to one side of the cured film adhesive on the second test piece obtained above, where the side surface was aligned with the side surface of the silicon wafer. A stainless steel flat-plate pressing mechanism was used as the force-applying mechanism. The tip of the copper plate side of the pressing mechanism was adjusted to a height of 7 μm from the surface of the copper plate side on which the silicon wafer was placed, so that the pressing mechanism was in contact with the copper plate. The maximum force applied until the hardened material was destroyed, peeled off the copper plate, or peeled off the silicon wafer was measured, and this value was used as the adhesion force of the hardened material (N/2mm). The results are shown in Table 1.

[膜狀接著劑之製造、切割黏晶片之製造、及膜狀接著劑之評價] [實施例2、比較例1至比較例2] 以接著劑組成物的含有成分的種類及含量成為表1所示之方式,變更製造接著劑組成物時的調配成分的種類及調配量的任一者或兩者,除此方面以外,利用與實施例1之情形相同的方法,製造膜狀接著劑及切割黏晶片,評價膜狀接著劑。但是,接著劑組成物不含有能量線硬化性樹脂(g)之實施例2及比較例1中,於製作第1試片時、及製造具膜狀接著劑之矽晶片時,不對膜狀接著劑照射紫外線,進而,使用聚丙烯(PP)製基材(GUNZE公司製造的「FUNCRARE LLD#80」,厚度80μm)代替PP/EMAA積層基材作為基材。結果表示於表1。[Manufacturing of Film Adhesive, Manufacturing of Dicing Wafers, and Evaluation of Film Adhesive] [Example 2, Comparative Examples 1 and 2] A film adhesive and dicing wafer were manufactured and evaluated using the same method as in Example 1, except that the types and amounts of the components in the adhesive composition were adjusted to those shown in Table 1. Either or both of the types and amounts of the components used in manufacturing the adhesive composition were changed. However, in Example 2 and Comparative Example 1, where the adhesive composition did not contain the energy-beam-curable resin (g), the film-like adhesive was not irradiated with UV light when preparing the first test piece and the silicon wafer with the film-like adhesive. Furthermore, a polypropylene (PP) substrate ("FUNCRARE LLD#80" manufactured by GUNZE, 80 μm thick) was used as the substrate instead of the PP/EMAA laminate substrate. The results are shown in Table 1.

此外,表1中的含有成分一欄記載為「-」時,表示接著劑組成物不含該成分。In addition, when "-" is written in the column of the contained ingredient in Table 1, it means that the adhesive composition does not contain the ingredient.

[表1]   實施例1 實施例2 比較例1 比較例2 基材 PP/EMAA積層基材 PP製基材 PP製基材 PP/EMAA積層基材 接著劑組成物的含有成分(質量份) 聚合物成分(a) (a)-1 20 - - 12 (a)-2 - 23 - - (a)-3 - - 13 - 環氧樹脂(b1) (b1)-1 25 - - 22 (b1)-2 35 - - - (b1)-3 8 - - - (b1)-4 - 5 - - (b1)-5 - 30 - - (b1)-6 - 15 - - (b1)-7 - - 23 - (b1)-8 - - 23 - (b1)-9 - - - 18 (b1)-10 - - - 38 熱硬化劑(b2) (b2)-1 1.5 - - 0.5 (b2)-2 - 24.8 22.8 - 硬化促進劑(c) (c)-1 1.5 0.2 0.2 0.5 填充材料(d) (d)-1 - - 17 - 偶合劑(e) (e)-1 0.6 - - 0.6 (e)-2 - 1 1 - 交聯劑(f) (f)-1 0.2 1 - 0.2 能量線硬化性樹脂(g) (g)-1 8 - - - (g)-2 - - - 8 光聚合起始劑(h) (h)-1 0.2 - - 0.2 評價結果 D0 (mm) 14.2 9.2 167.2 27.5 |ΔT|(N/mm)(ΔT(N/mm)) 2.1(2.1) 2.3(-2.3) 9.8(9.8) 10.2(10.2) 抑制拾取時膜狀接著劑殘留之效果 A(3) A(0) B(18) B(32) 膜狀接著劑之硬化物的接著力(N/2mm□) 111 154 249 57 [Table 1] Example 1 Example 2 Comparative example 1 Comparative example 2 substrate PP/EMAA laminated base material PP base material PP base material PP/EMAA laminated base material Ingredients of adhesive composition (by mass) Polymer component (a) (a)-1 20 - - 12 (a)-2 - twenty three - - (a)-3 - - 13 - Epoxy resin (b1) (b1)-1 25 - - twenty two (b1)-2 35 - - - (b1)-3 8 - - - (b1)-4 - 5 - - (b1)-5 - 30 - - (b1)-6 - 15 - - (b1)-7 - - twenty three - (b1)-8 - - twenty three - (b1)-9 - - - 18 (b1)-10 - - - 38 Heat hardener (b2) (b2)-1 1.5 - - 0.5 (b2)-2 - 24.8 22.8 - Hardening accelerator (c) (c)-1 1.5 0.2 0.2 0.5 Filling material (d) (d)-1 - - 17 - Coupling agent (e) (e)-1 0.6 - - 0.6 (e)-2 - 1 1 - Crosslinking agent (f) (f)-1 0.2 1 - 0.2 Energy ray curing resin (g) (g)-1 8 - - - (g)-2 - - - 8 Photopolymerization initiator (h) (h)-1 0.2 - - 0.2 Evaluation results D 0 (mm) 14.2 9.2 167.2 27.5 |ΔT|(N/mm)(ΔT(N/mm)) 2.1(2.1) 2.3(-2.3) 9.8(9.8) 10.2(10.2) Suppresses the effect of film adhesive residue during pickup A(3) A(0) B(18) B(32) Adhesion strength of cured film adhesive (N/2mm□) 111 154 249 57

由上述結果可明顯看出,實施例1至實施例2中,即便支撐片不具備與膜狀接著劑直接接觸之黏著劑層,於拾取具膜狀接著劑之矽晶片時,亦能夠抑制膜狀接著劑殘留於支撐片。實施例1至實施例2中,D0 為14.2mm以下。 另外,實施例1至實施例2中,膜狀接著劑之硬化物的接著力為111N/2mm□以上,具有充分的接著力。此外,這些實施例中,於前述接著力之測定時,前述硬化物未自矽晶片剝離。 另一方面,實施例1至實施例2中,|ΔT|為2.3以下。The above results clearly demonstrate that, even when the support sheet lacks an adhesive layer in direct contact with the film adhesive, Examples 1 and 2 can suppress film adhesive residue on the support sheet when picking up a silicon wafer coated with the film adhesive. In Examples 1 and 2, D0 is 14.2 mm or less. Furthermore, in Examples 1 and 2, the adhesive strength of the cured film adhesive is 111 N/2 mm or greater, indicating sufficient adhesive strength. Furthermore, in these Examples, the cured film adhesive did not peel off the silicon wafer during the aforementioned adhesive force measurement. Furthermore, in Examples 1 and 2, |ΔT| is 2.3 or less.

相對於此,比較例1至比較例2中,於拾取具膜狀接著劑之矽晶片時,無法抑制膜狀接著劑殘留於支撐片。比較例1至比較例2中,D0 為27.5mm以上。 進而,比較例2中,膜狀接著劑之硬化物的接著力為57N/2mm□,接著力不充分。 另一方面,比較例1中,|ΔT|為10.2而較大。 [產業可利用性]In contrast, in Comparative Examples 1 and 2, when picking up silicon wafers coated with film adhesive, it was impossible to prevent film adhesive residue from remaining on the support sheet. In Comparative Examples 1 and 2, D 0 was greater than 27.5 mm. Furthermore, in Comparative Example 2, the bonding force of the cured film adhesive was 57 N/2 mm, indicating insufficient bonding force. Meanwhile, in Comparative Example 1, |ΔT| was a relatively large 10.2. [Industrial Applicability]

本發明能夠用於製造半導體裝置。The present invention can be used to manufacture semiconductor devices.

5:基板 5a:基板的電路形成面 7:扯離機構 8:按壓機構 9:半導體晶圓 9':半導體晶片 9b:半導體晶圓的內面 9b':半導體晶片的內面 10:支撐片 10a:支撐片的第1面 11:基材 11a:基材的第1面 13:膜狀接著劑 13a:膜狀接著劑的第1面 13b:膜狀接著劑的第2面 15:剝離膜 16:治具用接著劑層 16a:治具用接著劑層的上表面及側面 20:切割片 20a:切割片的第1面 90:膜狀接著劑之硬化物 90a:膜狀接著劑之硬化物的第1面 90b:膜狀接著劑之硬化物的第2面 90c:膜狀接著劑之硬化物的側面 91:銅板 92:矽晶片 92c:矽晶片的側面 99:第1試片 101,102:切割黏晶片 119A:積層體(1) 119B:具膜狀接著劑之半導體晶片集合體(1) 129A:積層體(21) 129B:積層體(22) 129C:具膜狀接著劑之半導體晶片集合體(2) 130:切斷後的膜狀接著劑 139':具膜狀接著劑之半導體晶片 151:第1剝離膜 152:第2剝離膜 P:力5: Substrate 5a: Circuit-forming surface of substrate 7: Pull-off mechanism 8: Pressing mechanism 9: Semiconductor wafer 9': Semiconductor chip 9b: Inner surface of semiconductor wafer 9b': Inner surface of semiconductor chip 10: Support sheet 10a: First surface of support sheet 11: Base material 11a: First surface of base material 13: Film adhesive 13a: First surface of film adhesive 13b: Second surface of film adhesive 15: Peeling film 16: Jig adhesive layer 16a: Top and side surfaces of jig adhesive layer 20: Dicing blade 20a: First surface of dicing blade 90: Cured film adhesive 90a: Curing of film adhesive 1st surface of the object 90b: 2nd surface of the cured film adhesive 90c: Side surface of the cured film adhesive 91: Copper plate 92: Silicon wafer 92c: Side surface of the silicon wafer 99: 1st test piece 101, 102: Diced adhesive wafer 119A: Laminated body (1) 119B: Semiconductor with film adhesive Chip assembly (1) 129A: Laminated body (21) 129B: Laminated body (22) 129C: Semiconductor chip assembly with film adhesive (2) 130: Film adhesive after cutting 139': Semiconductor chip with film adhesive 151: First peeling film 152: Second peeling film P: Force

[圖1]係表示使用本發明的一實施形態的膜狀接著劑所製作之第1試片之俯視圖。 [圖2]係用於以示意方式說明本發明的一實施形態的膜狀接著劑之硬化物的接著力的測定方法之剖視圖。 [圖3]係以示意方式表示本發明的一實施形態的膜狀接著劑的一例之剖視圖。 [圖4]係以示意方式表示本發明的一實施形態的切割黏晶片的一例之剖視圖。 [圖5]係以示意方式表示本發明的一實施形態的切割黏晶片的另一例之剖視圖。 [圖6A]係用於以示意方式說明使用本發明的一實施形態的切割黏晶片之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖6B]係用於以示意方式說明使用本發明的一實施形態的切割黏晶片之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖6C]係用於以示意方式說明使用本發明的一實施形態的切割黏晶片之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖6D]係用於以示意方式說明使用本發明的一實施形態的切割黏晶片之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖7A]係用於以示意方式說明使用本發明的一實施形態的膜狀接著劑之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖7B]係用於以示意方式說明使用本發明的一實施形態的膜狀接著劑之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖7C]係用於以示意方式說明使用本發明的一實施形態的膜狀接著劑之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖7D]係用於以示意方式說明使用本發明的一實施形態的膜狀接著劑之情形時的半導體裝置的製造方法的一例之剖視圖。 [圖7E]係用於以示意方式說明使用本發明的一實施形態的膜狀接著劑之情形時的半導體裝置的製造方法的一例之剖視圖。[Figure 1] is a top view of a first test piece produced using a film adhesive according to an embodiment of the present invention. [Figure 2] is a cross-sectional view schematically illustrating a method for measuring the bonding strength of a cured product of a film adhesive according to an embodiment of the present invention. [Figure 3] is a cross-sectional view schematically illustrating an example of a film adhesive according to an embodiment of the present invention. [Figure 4] is a cross-sectional view schematically illustrating an example of a dicing adhesive sheet according to an embodiment of the present invention. [Figure 5] is a cross-sectional view schematically illustrating another example of a dicing adhesive sheet according to an embodiment of the present invention. [Figure 6A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a dicing adhesive sheet according to an embodiment of the present invention. FIG6B is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a dicing wafer according to an embodiment of the present invention. FIG6C is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a dicing wafer according to an embodiment of the present invention. FIG6D is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a dicing wafer according to an embodiment of the present invention. FIG7A is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a film adhesive according to an embodiment of the present invention. FIG7B is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a film adhesive according to an embodiment of the present invention. [Figure 7C] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a film-shaped adhesive according to an embodiment of the present invention. [Figure 7D] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a film-shaped adhesive according to an embodiment of the present invention. [Figure 7E] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using a film-shaped adhesive according to an embodiment of the present invention.

13:膜狀接著劑 13: Film adhesive

13a:膜狀接著劑的第1面 13a: First side of film adhesive

13b:膜狀接著劑的第2面 13b: Second side of film adhesive

151:第1剝離膜 151: First peeling membrane

152:第2剝離膜 152: Second peeling membrane

Claims (4)

一種膜狀接著劑,係硬化性之膜狀接著劑;  針對為多片前述膜狀接著劑之積層物且厚度為200μm之第1試片,依據JIS K7128-3,將夾住並固定前述第1試片之一對夾具間的距離設為60mm、撕裂速度設為200mm/min,藉由直角形撕裂法進行撕裂試驗時,前述第1試片的撕裂強度成為最大後至前述第1試片斷裂為止的前述第1試片在撕裂方向上的位移量為15mm以下;       前述膜狀接著劑含有丙烯酸樹脂、以及選自鄰甲酚酚醛清漆型環氧樹脂及鄰甲酚酚醛清漆樹脂的一種以上;     並且,前述膜狀接著劑不含有填充材料。A film-like adhesive is a curable film-like adhesive; for a first test piece which is a laminate of a plurality of sheets of the aforementioned film-like adhesive and has a thickness of 200 μm, in accordance with JIS K7128-3, the distance between a pair of clamps for clamping and fixing the aforementioned first test piece is set to 60 mm, and the tearing speed is set to 200 mm/min. When a tearing test is performed by a right-angle tearing method, the displacement of the aforementioned first test piece in the tearing direction from the time the tear strength of the aforementioned first test piece reaches a maximum to the time the aforementioned first test piece breaks is less than 15 mm; the aforementioned film-like adhesive contains an acrylic resin and one or more selected from an o-cresol novolac-type epoxy resin and an o-cresol novolac resin; and the aforementioned film-like adhesive does not contain a filler. 如請求項1所記載之膜狀接著劑,係製作第2試片,該第2試片係具備大小為2mm×2mm且厚度為20μm之前述膜狀接著劑之硬化物、設置於前述硬化物的一面的整面且厚度為500μm之銅板、及設置於前述硬化物的另一面的整面且厚度為350μm之矽晶片,且前述硬化物的側面與前述矽晶片的側面經對位而構成之第2試片;於將前述銅板固定之狀態下,對前述第2試片中的前述硬化物的側面與前述矽晶片的側面經對位之部位,同時沿相對於前述硬化物的一面呈平行的方向,以200μm/sec之速度施加力時,直至前述硬化物遭到破壞、或前述硬化物自前述銅板剝離、或前述硬化物自前述矽晶片剝離為止所施加之前述力的最大值為100N/2mm□以上。The film adhesive described in claim 1 is used to prepare a second test piece, wherein the second test piece comprises a cured product of the film adhesive having a size of 2 mm × 2 mm and a thickness of 20 μm, a copper plate having a thickness of 500 μm and disposed entirely on one surface of the cured product, and a silicon wafer having a thickness of 350 μm and disposed entirely on the other surface of the cured product, wherein the side surface of the cured product and the side surface of the silicon wafer are aligned; With the copper plate fixed, a force is applied simultaneously at a rate of 200 μm/sec to the aligned portion of the side surface of the hardened material and the side surface of the silicon wafer in the second test piece in a direction parallel to one surface of the hardened material, until the hardened material is destroyed, or the hardened material is peeled off from the copper plate, or the hardened material is peeled off from the silicon wafer, with the maximum value of the force applied being 100 N/2 mm or more. 一種切割黏晶片,具備支撐片、及設置於前述支撐片的一面上之膜狀接著劑;  前述膜狀接著劑為如請求項1或2所記載之膜狀接著劑。A cutting adhesive chip, comprising a support sheet and a film adhesive disposed on one surface of the support sheet; the film adhesive is the film adhesive described in claim 1 or 2. 如請求項3所記載之切割黏晶片,其中前述支撐片僅由基材所構成。As claimed in claim 3, the dicing adhesive chip, wherein the aforementioned support sheet is composed only of a substrate.
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