TWI889125B - Grooving device, semiconductor chip, and method for manufacturing semiconductor chip - Google Patents

Abstract

The slotting device of the present invention comprises: a laser irradiation unit, which performs slotting processing; a rotating table, which holds the wafer and rotates it while forming a protective film to protect the electrical path surface of the wafer from being affected by residues; a rotation angle position detection unit, which is used to detect the rotation angle position of the wafer held on the rotating table in the circumferential direction; and a control unit, which adjusts the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position.

Description

Grooving device, semiconductor chip and method for manufacturing semiconductor chip

The present invention relates to a slotting device, a semiconductor chip, and a method for manufacturing a semiconductor chip.

Previously, a slotting device was known. For example, Japanese Patent No. 5324180 disclosed such a slotting device.

The laser processing device disclosed in the above-mentioned Japanese Patent No. 5324180 has a laser processing unit (laser light irradiation unit), a rotating table (rotating table) and a motor. The laser processing unit is configured to form a groove of a specified depth on the wafer along the predetermined dividing line (cutting road) by laser, and then cut the wafer along the predetermined dividing line by laser. In the laser processing unit, after positioning the wafer, processing is performed by laser. Thereby, the wafer is accurately cut (divided) into a plurality of semiconductor chips along the predetermined dividing line.

The rotating table in the above-mentioned Japanese Patent No. 5324180 is configured to hold the wafer while the resin is coated to protect the electrical path surface of the wafer from being affected by the residue (debris) generated during laser processing. The motor is configured to rotate the rotating table. In this way, the resin is spread on the electrical path surface of the wafer by using the motor to rotate the wafer held on the rotating table, and the centrifugal force is used to spread the resin on the electrical path surface of the wafer. In the laser processing device, after the resin is spread and the electrical path surface of the wafer is covered, it is transported to the laser processing unit for laser processing.

However, although it is not clearly stated in the above-mentioned patent document 1, in the previous laser processing device described in the above-mentioned Japanese Patent No. 5324180, after the wafer with the resin spread on the electrical path surface of the wafer is transported to the laser processing section, the rotation angle position of the wafer is roughly positioned based on the rotation angle position of the groove or reference surface provided on the outer periphery of the wafer. Then, after the rotation angle position of the wafer is roughly positioned, the alignment mark of the wafer is detected. In this way, in the laser processing device, the rotation angle position of the wafer is adjusted based on the position of the detected alignment mark, and then laser processing is performed. Thus, in the previous laser processing device, after the rotation angle position of the wafer is adjusted to an appropriate rotation angle position by the laser processing unit, the wafer is processed by laser and rough positioning is performed, so the adjustment of the rotation angle position of the wafer requires a relatively long time. Therefore, it is desired to shorten the time required for adjusting the rotation angle position of the wafer.

The present invention is completed to solve the above-mentioned problems. One purpose of the present invention is to provide a slotting device, a semiconductor chip and a method for manufacturing a semiconductor chip that can shorten the time required to adjust the rotation angle position of the wafer.

The first embodiment of the slotting device of the present invention comprises: a laser irradiation unit, which performs slotting processing, that is, irradiates laser light along the cutting path between semiconductor chips on the electrical path of the wafer to form a slot that separates the insulating film; a rotating table, which holds the wafer and rotates it when forming a protective film to protect the electrical path of the wafer from being affected by residues, and the above-mentioned residues are generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit, which is used to detect the rotation angle position of the rotating table in the rotation direction of the wafer held on the rotating table; and a control unit, which controls the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer.

In the slotting device of the first aspect of the present invention, as described above, a control unit is provided, and the control unit controls the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer. In this way, by adjusting the rotation angle position of the wafer, a coarse positioning of the same degree as the coarse positioning of the rotation angle position of the wafer can be performed in the laser light irradiation unit, and the coarse positioning of the rotation angle position of the wafer is performed based on the rotation angle position of the groove or reference surface set on the outer periphery of the wafer. As a result, the position of the alignment mark of the wafer can be obtained based on the wafer positioned at the adjusted rotation angle position without the need to detect the groove or reference surface, so the time required for adjusting the rotation angle position of the wafer can be shortened.

In the slotting device of the first aspect, the control unit is preferably configured to perform control of adjusting the release position based on the detection result of the rotation angle position detection unit and the initial position, the initial position being the target rotation angle position in the rotation direction of the wafer when the wafer is held by the turntable, and the release position being the rotation angle position in the rotation direction of the wafer when the turntable releases the wafer. If so configured, by adjusting the wafer to the release position, coarse positioning of the same degree as coarse positioning of the rotation angle position of the wafer can be performed in the laser light irradiation unit, which is performed based on the rotation angle position of the groove or reference surface provided on the outer periphery of the wafer. As a result, there is no need to detect the groove or reference surface. Based on the wafer being positioned at the release position, the position of the wafer alignment mark can be obtained, thereby shortening the time required to adjust the rotation angle position of the wafer.

In the slotting device in which the control unit is configured to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, it is preferably configured to transport the wafer positioned at the release position based on the detection result of the rotation angle position detection unit and the initial position from the turntable to the laser light irradiation unit while maintaining the rotation angle unchanged. If so configured, the wafer can be transported to the laser light irradiation unit while maintaining the rotation angle of the release position unchanged. Therefore, in the laser light irradiation unit, there is no need to detect the groove or reference surface. Based on the wafer maintaining the rotation angle of the release position unchanged, the position of the alignment mark of the wafer can be obtained. As a result, in the laser light irradiation unit, the time required to adjust the rotation angle position of the wafer can be shortened.

In the slotting device in which the control unit is configured to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, it is preferred to further have a wafer storage unit for storing wafers, and to be configured to transport the wafer positioned at the release position based on the detection result of the rotation angle position detection unit and the initial position from the turntable to the wafer storage unit while maintaining the rotation angle unchanged. If so configured, the wafer can be transported to the wafer storage unit while maintaining the rotation angle of the release position unchanged. Therefore, in the next step of the slotting device, there is no need to detect the groove or reference surface, and the position of the alignment mark of the wafer can be obtained based on the wafer maintaining the rotation angle of the release position unchanged. As a result, in the next step of the slotting device, the time required to adjust the rotation angle position of the wafer can be shortened.

In the slotting device in which the control unit is configured to perform control to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, it is preferred that the control unit is configured to perform the following control: based on the detection result of the rotation angle position detection unit and the initial position, the release position is adjusted in such a way that the initial position is aligned with the initial position. If so configured, the positioning accuracy of the wafer at the initial position and the positioning accuracy of the wafer at the release position can be maintained at the same level, so when the positioning accuracy of the wafer in the previous step of the slotting device is high-precision, the positioning accuracy of the wafer at the release position can also be maintained at high-precision.

In the slotting device in which the control unit is configured to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, it is preferred that the rotation angle position detection unit includes an encoder for detecting the rotation angle of the rotating table, and the control unit is configured to adjust the release position based on the rotation angle and initial position of the rotating table detected by the encoder. If so configured, the initial position of the wafer can be easily obtained by the encoder, and the wafer can be adjusted to the release position, thereby easily realizing a slotting device that can adjust the wafer to the release position.

In this case, it is preferable that the turntable is configured to hold the wafer and rotate it when the protective film is removed and the electrical path surface is dried after the groove processing is performed by the laser light irradiation unit; and the control unit is configured to control the rotation speed of the turntable for each of the formation of the protective film, the removal of the protective film, and the drying of the electrical path surface after the protective film is removed based on the rotation angle of the turntable detected by the encoder. If configured in this way, not only can the initial position of the wafer be obtained by the encoder and the wafer can be adjusted to the release position, but the rotation speed of the turntable can also be controlled, so compared with the case of using individual sensors, the increase in the number of parts of the groove device can be suppressed.

In the slotting device in which the control unit is configured to perform control of adjusting the release position based on the detection result of the rotation angle position detection unit and the initial position, it is preferred that the control unit is configured to perform the following control: after the operation including the formation of the protective film by rotating the wafer held by the rotating table is completed, the rotating table is rotated from the rotation angle position at the end of the operation to the release position. If so configured, the wafer can be adjusted to the release position after a suitable protective film is formed on the electrical path of the wafer, so that the protective film can be properly formed and the wafer can be properly adjusted to the release position.

In the slotting device of the first aspect, it is preferred that a slotting fixture table is further provided, and when the slotting process is performed by the laser light irradiation unit, the slotting fixture table absorbs and holds the wafer transported by the transport mechanism, and rotates or moves the wafer in the horizontal direction; and the rotation angle position detection unit includes a camera unit, and the camera unit photographs the wafer held on the turntable in order to detect the rotation angle position of the wafer held on the turntable, thereby photographing the position reference portion set on the outer periphery of the wafer; the control unit is configured to perform the following control: based on the preset target rotation angle position and the image of the wafer, after the wafer is held by the slotting fixture table, the rotation angle position is adjusted, and the image is obtained by the camera unit, including the position reference portion when the rotation of the turntable is completed. If so configured, the wafer can be accurately adjusted to a preset target rotation angle position and held on the slotting fixture table by adjusting the rotation angle position of the wafer based on the wafer image after the wafer is held on the slotting fixture table.

In the above-mentioned first aspect of the slotting device, it is preferably further equipped with: a wafer receiving section, which receives the wafer; and a transport mechanism, which includes a hand that absorbs the wafer to hold it, and is configured to transport the wafer held by the hand; and a rotation angle position detection section includes a camera section, and the camera section photographs the wafer held on the turntable in order to detect the rotation angle position of the wafer held on the turntable, thereby photographing a position reference section arranged on the outer periphery of the wafer; the control section is configured to perform the following control: based on a preset target rotation angle position and an image of the wafer, the posture of the hand when the hand receives the wafer into the wafer receiving section is adjusted, thereby adjusting the rotation angle position of the wafer, and the above image is obtained by photographing the camera section, including the position reference section when the rotation of the turntable is completed. If configured in this way, the rotation angle position of the wafer can be adjusted based on the image of the wafer by hand, and the rotation angle position of the wafer can be adjusted based on the actual rotation angle position of the wafer, so that the wafer can be accurately adjusted to the preset target rotation angle position and stored in the wafer storage unit.

In the slotting device of the first embodiment, it is preferred to further have a transport mechanism, the transport mechanism includes a hand that holds the wafer by suction, and is configured to transport the wafer held by the hand; and the rotating table includes a rotating wafer holding table, the rotating wafer holding table is configured to hold the wafer transported by the transport mechanism by suction, and is formed with a first recess for inserting the hand. Here, the hand is inserted into the first recess and the wafer is held by the rotating wafer holding table, so the posture of the hand when holding the wafer by the rotating wafer holding table is preset. Therefore, the hand holds the wafer in a fixed posture, and the wafer held by the hand is also held in a fixed posture. As a result, the hand can transport the wafer while maintaining the rotation angle of the position when it is released unchanged.

In this case, it is preferable to further provide a slotting fixture table, which absorbs and holds the wafer transported by the transport mechanism when the slotting process is performed by the laser light irradiation unit, and rotates or moves the wafer in the horizontal direction; and the slotting fixture table includes a slotting wafer holding table formed with a second recess. Here, the hand is inserted into the second recess to hold the wafer by the slotting fixture table, so the posture of the hand when holding the wafer by the slotting fixture table is preset. Therefore, the wafer is transported from the hand to the slotting fixture table in a fixed posture, so the slotting fixture table can hold the wafer while maintaining the rotation angle of the position when released.

In the slotting device having the transport mechanism including the above-mentioned hand, it is preferable to further have a temporary placement table, which absorbs and holds the wafer transported by the transport mechanism after the slotting process is performed by the laser light irradiation unit and before the protective film on the electrical path of the wafer is removed; and the temporary placement table includes a temporary placement wafer holding table formed with a third recess. Here, the hand is inserted into the third recess and the wafer is held by the temporary placement table, so the posture of the hand when holding the wafer by the temporary placement table is preset. Therefore, the wafer is transported from the hand to the temporary placement table in a fixed posture, so that the temporary placement table can hold the wafer while maintaining the rotation angle of the position when released.

In the above-mentioned first embodiment of the slotting device, it is preferred to further include an electrical surface protection and cleaning section, wherein the electrical surface protection and cleaning section is provided with a rotating table to form, remove and dry a protective film on the electrical surface of the wafer; and the electrical surface protection and cleaning section includes: a resin coating nozzle, which sprays a resin coating nozzle on the electrical surface of the wafer to form a protective film. A water-soluble resin is coated on the surface of the wafer; a cleaning nozzle supplies cleaning water to the surface of the wafer to remove the water-soluble resin coated by the resin coating nozzle; and a drying nozzle blows warm air to dry the surface of the wafer; the resin coating nozzle, the cleaning nozzle and the drying nozzle are respectively configured to rotate independently of each other. Here, in the case where the resin coating nozzle, the cleaning nozzle and the drying nozzle rotate as a whole, for example, when applying water-soluble resin by the resin coating nozzle, since the cleaning nozzle and the drying nozzle also rotate together, it is conceivable that the water-soluble resin will adhere to the cleaning nozzle and the drying nozzle, and during the resin coating process and the drying process, residual liquid will drip from the cleaning nozzle and adhere to other nozzles, or during the cleaning process and the drying process, residual liquid will drip from the resin coating nozzle and adhere to other nozzles. In view of this, the resin coating nozzle, the cleaning nozzle and the drying nozzle are respectively configured to rotate independently of each other, thereby preventing the water-soluble resin coated from the resin coating nozzle from adhering to the cleaning nozzle and the drying nozzle, and preventing residual liquid from adhering to the cleaning nozzle during the resin coating process and the drying process, and residual liquid from the resin coating nozzle during the cleaning process and the drying process, etc.

In this case, it is preferred to further include: a first rotating mechanism, which rotates the resin coating nozzle to either a coating position for coating a water-soluble resin on the electrical path surface of the wafer, or a first retreat position for retreating the resin coating nozzle from the coating position; a second rotating mechanism, which rotates the cleaning nozzle to either a supply position for supplying cleaning water to the electrical path surface of the wafer, or a second retreat position for retreating the cleaning nozzle from the supply position; and a third rotating mechanism, which rotates the drying nozzle to either a supply position for blowing warm air onto the electrical path surface of the wafer, or a third retreat position for retreating the drying nozzle from the supply position. If constructed in this way, it is easy to realize a structure in which the resin coating nozzle, the cleaning nozzle, and the drying nozzle can rotate independently.

The semiconductor chip of the second aspect of the present invention is manufactured by a slotting device, which comprises: a laser irradiation unit, which performs slotting processing, that is, irradiates laser light along the cutting path between the semiconductor chips on the electrical path of the wafer to form a slot that separates the insulating film; a rotating table, which holds the wafer and rotates it when forming a protective film to protect the electrical path of the wafer from the influence of residues, and the residues are generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit, which is used to detect the rotation angle position of the rotating table in the rotation direction of the wafer held on the rotating table; and a control unit, which controls the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer.

In the semiconductor chip of the second aspect of the present invention, as described above, it is manufactured by a slotting device provided with a control unit, and the control unit performs control to adjust the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer. In this way, by adjusting the rotation angle position of the wafer, a coarse positioning of the same degree as the coarse positioning of the rotation angle position of the wafer can be performed in the laser light irradiation unit, and the coarse positioning of the rotation angle position of the wafer is implemented based on the rotation angle position of the groove or reference surface provided on the outer periphery of the wafer. As a result, the position of the alignment mark of the wafer can be obtained based on the wafer positioned at the adjusted rotation angle position without the need to detect the groove or reference surface, so a semiconductor chip that can shorten the time required to adjust the rotation angle position of the wafer can be provided.

The manufacturing method of the semiconductor chip of the third aspect of the present invention includes the following steps: adjusting the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer, the rotation angle position detection unit is used to detect the rotation angle position of the turntable in the rotation direction of the wafer held on the turntable, the turntable holds the wafer and rotates it when forming a protective film to protect the electrical path surface of the wafer from being affected by the residue, the residue is generated when the groove processing is performed by the laser light irradiation unit; irradiating the laser light along each of the multiple cutting paths of the wafer provided with the multiple semiconductor chips; and using the expansion unit to expand the thin film member, thereby dividing the wafer into multiple semiconductor chips along each of the multiple cutting paths.

In the semiconductor chip manufacturing method of the third aspect of the present invention, as described above, the following steps are provided: based on the detection result of the rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer, the rotation angle position of the wafer is adjusted. In this way, by adjusting the rotation angle position of the wafer, a coarse positioning of the same degree as the coarse positioning of the rotation angle position of the wafer can be performed in the laser light irradiation unit. The above-mentioned coarse positioning of the rotation angle position of the wafer is implemented based on the rotation angle position of the groove or reference surface set on the outer periphery of the wafer. As a result, the position of the alignment mark of the wafer can be obtained based on the wafer positioned at the adjusted rotation angle position without the need to detect the groove or reference surface, so a semiconductor chip manufacturing method that can shorten the time required for adjusting the rotation angle position of the wafer can be provided.

1: Slotting device

2: Tape attachment device

3: Cutting device

4: Grinding device

5: Tape changing device

6: Expansion device

11: Box section

12: Laser irradiation unit

12a: Clamp table for slotting

12b: Framework

12c: Laser Department

12d: Photography Department

12e: Photography Department

13: Electrical surface coating cleaning section

13a: Resin coating nozzle

13b: 1st rotating mechanism

13c: Clean the nozzle

13d: Second rotating mechanism

13e: Dry spray

13f: The third rotating mechanism

13g: Scattering shield

13h: Rotating table

14: Camera Department

15:Transportation mechanism

15a: Hands

15b: 1st arm

15c: Second arm

16: Temporary placement table

16a: Wafer holding table for temporary placement

17: Base

18: Control Department

21: Box storage area

22:Manipulator

23:Transportation mechanism

24: Protective tape attachment area

30: Cutting section

31: Box section

32:Wafer transfer department

41: First box section

42:Manipulator

43: Adsorption and holding part

44:Grinding Department

44a: Rough grinding section

44b: Lapping and cutting section

44c: Fine grinding department

45: Fine grinding department

46: Crystal defect formation part

47: Second box section

48: Rotating table

51: Box storage area

52:Manipulator

53:Transportation mechanism

54: Expansion tape attachment part

55:Ultraviolet irradiation part

100: Semiconductor wafer processing system

121a: Wafer holding table for slotting

122a: Y-direction moving part

123a: X-direction moving part

131h: Rotating wafer holder

132h: Rotary drive unit

133h: Rotation angle position detection unit

134h: Z-direction moving mechanism

161a: concave part

201: Wafer power supply device

201a: Probe

601: Box section

602: Lifting the hands

603: Adsorption of hands

604: Air conditioning supply department

605: Cooling unit

606: Expansion Department

607: Expansion and maintenance components

608: Heat shrinkage part

609: Ultraviolet irradiation department

610: Extrusion unit

611: Clamping part

701: Slotting device

714: Photography Department

718: Control Department

1211a: concave part

1311h: concave part

1331h: Encoder

1332h: Counting Department

Ar: Alignment mark

Ch:Semiconductor chip

Cs: rotation center axis

H1: Painting and washing height position

H2: Moving in and out height position

Ld: Laser light

Lg: Laser light

Nt: Groove

P1: Initial position

P2: Release position

P3: Position when lamination is completed

P4: Position when drying is completed

Pr1: coating position

Pr2: 1st retreat position

Pw1: Supply location

Pw2: 2nd retreat position

Pb1: Air supply position

Pb2: 3rd retreat position

R: Direction

R1: Direction

R2: Direction

Rf:Framework

S1: Steps

S2: Step

S3: Step

S4: Step

S5: Step

S6: Step

S101: Step

S102: Step

S103: Step

S104: Step

Tb: Protective tape

Te: expansion tape

We: Wafer

We1: Electric road surface

Ws: cutting path

X: Direction

X1: Direction

X2: Direction

Y: direction

Y1: Direction

Y2: Direction

Z: Direction

Z1: Direction

Z2: Direction

θg: rotation angle position

θh: rotation angle position

θr: rotation angle position

θs: rotation angle position

FIG1 is a schematic diagram showing an overview of a semiconductor wafer processing system equipped with a cutting device and an expanding device according to the present embodiment.

FIG2 is a top view of a slotting device of a semiconductor wafer processing system according to the present embodiment.

FIG3 is a top view of the tape attaching device of the semiconductor wafer processing system of the present embodiment.

FIG4 is a top view showing a cutting device of a semiconductor wafer processing system according to the present embodiment.

FIG5 is a top view of the polishing device of the semiconductor wafer processing system of the present embodiment.

FIG6 is a top view of the tape replacement device of the semiconductor wafer processing system of the present embodiment.

FIG. 7 is a side view of the tape replacement device of the semiconductor wafer processing system according to the present embodiment.

FIG8 is a top view showing an expansion device of a semiconductor wafer processing system according to the present embodiment.

FIG9 is a side view showing an expansion device of a semiconductor wafer processing system according to the present embodiment.

FIG10 is a flow chart showing the semiconductor chip manufacturing process of the semiconductor wafer processing system of the present embodiment.

FIG11 is a top view showing the grooves and alignment marks of the wafer of the present embodiment.

FIG. 12 is a schematic diagram showing the upstream wafer power supply device and the downstream tape attaching device of the slotting device of the present embodiment.

Figure 13 is a detailed top view of the slotting device of this embodiment.

FIG. 14 is a top view of the electrical surface coating cleaning section of the grooving device of this embodiment.

FIG. 15 is a side view showing the state where the rotating wafer holding table of the electrode surface coating cleaning section of the groove opening device of the present embodiment is moved to the coating cleaning height position.

FIG. 16 is a side view showing the state where the rotating wafer holding table of the electrical surface coating cleaning section of the grooving device of the present embodiment is moved to the loading and unloading height position.

FIG. 17 is a top view showing the state where the wafer is transported to the turntable by the U-shaped hand of the slotting device of this embodiment.

FIG18 is a top view showing the state where the U-shaped hand of the slotting device of this embodiment transports the wafer to the laser light irradiation section.

FIG. 19 is a top view showing the initial position of the wafer on the rotating table of the slotting device of the present embodiment.

FIG. 20 is a top view showing the position of the wafer on the rotating table of the slotting device of the present embodiment when it is released.

FIG. 21 is a top view showing the position of the wafer on the rotating table of the slotting device of the present embodiment when the coating is completed.

FIG. 22 is a top view showing the position of the wafer on the rotating table of the slotting device of the present embodiment when drying is completed.

FIG. 23 is a schematic diagram showing the setting screen of the rotation control of the slotting device of this embodiment.

FIG. 24 is a curve diagram showing the relationship between time, speed and total rotation angle in the coating and drying steps of the slotting device of the present embodiment. It is also a top view showing the position of the wafer on the rotating table when drying is completed.

FIG. 25 is a graph showing the relationship between time, speed, and total rotation angle in the cleaning and drying steps of the slotting device of the present embodiment. It is also a top view showing the position of the wafer on the rotating table when drying is completed.

FIG. 26 is a flow chart showing the release position adjustment process in the control unit of the slotting device of this embodiment.

FIG. 27 is a top view of a slotting device showing a variation of the present embodiment.

FIG. 28 is a top view showing a state in which a wafer is taken out (or contained) by a U-shaped hand in a slotting device of a variation of the present embodiment.

FIG. 29 is a top view showing a state in which a wafer is transferred to (or held in) a rotating table by a U-shaped hand in a slotting device of a variation of the present embodiment.

FIG30 is a top view showing a state in which a wafer is transferred to (or held in) a slotting fixture table by a U-shaped hand in a slotting device of a variation of the present embodiment.

The following describes the implementation method for embodying the present invention based on the drawings.

Referring to FIG. 1 to FIG. 26, the structure of the semiconductor wafer processing system 100 according to the embodiment of the present invention is described.

(Semiconductor wafer processing system)

As shown in FIG. 1 , the semiconductor wafer processing system 100 is a device for processing a wafer We. The semiconductor wafer processing system 100 is configured to form a modified portion on the wafer We, and to divide the wafer We along the modified portion to form a plurality of semiconductor chips Ch. Here, the wafer We is a circular thin plate formed by a crystal of a semiconductor substance that is a material for a semiconductor integrated circuit. A modified portion is formed inside the wafer We, and the modified portion is formed by modifying the inside along a dividing line by processing in the semiconductor wafer processing system 100. That is, the wafer We is processed to be divisible along a dividing line. Here, the so-called modified portion refers to cracks and pores formed inside the wafer We by laser light Ld.

Specifically, the semiconductor wafer processing system 100 has a slotting device 1, a tape attaching device 2, a cutting device 3, a grinding device 4, a tape replacing device 5 and an expanding device 6.

As shown in FIG. 1 , in the semiconductor wafer processing system 100, the wafer We is processed in the order of the slotting device 1, the tape attaching device 2, the cutting device 3, the grinding device 4, the tape replacing device 5 and the expanding device 6.

<Slotting device>

The slotting device 1 is configured to irradiate the cutting road Ws between the semiconductor chips Ch of the electrical path We1 of the wafer We without the frame Rf and the protective tape Tb installed along the cutting road Ws between the semiconductor chips Ch of the wafer We without the frame Rf and the protective tape Tb installed, and separate the insulating film and the inspection pattern. Here, the laser light Lg is a light with a wavelength shorter than the wavelength of the infrared region. In addition, the so-called insulating film refers to the interlayer insulating film of the wafer We. The insulating film is formed of a Low-k material with a relatively low dielectric constant as an interlayer insulating film material. In addition, the so-called inspection pattern refers to a test conduction pattern used for conducting a conduction test of the semiconductor chip Ch of the wafer We. The inspection pattern is the so-called Teg (Test Element Group).

Specifically, as shown in FIG. 2 , the slotting device 1 includes a cassette portion 11, a laser light irradiation portion 12, and a circuit surface coating cleaning portion 13. The cassette portion 11 is configured to accommodate a wafer We to which a frame Rf and a protective tape Tb are not installed. The laser light irradiation portion 12 is configured to irradiate a laser light Lg for separating an insulating film and an inspection pattern of the wafer We. The circuit surface coating cleaning portion 13 is configured to coat the circuit surface We1 of the wafer We before separating the insulating film and the inspection pattern, and to clean the circuit surface We1 of the wafer We after separating the insulating film and the inspection pattern. Furthermore, the cassette portion 11 is an example of a "wafer housing portion" in the scope of the patent application. The electrical surface coating and cleaning section 13 is an example of the "electrical surface protection and cleaning section" within the scope of the patent application.

<Tape attachment device>

The tape attaching device 2 is configured to attach the protective tape Tb to the electrical path We1 of the wafer We (refer to FIG. 1 ).

Specifically, as shown in FIG3 , the tape attaching device 2 includes a cassette storage portion 21, a robot 22, a conveying mechanism 23, and a protective tape attaching portion 24. The cassette storage portion 21 is configured to accommodate a frame Rf, a wafer We, and a wafer We attached to the frame Rf. The robot 22 is configured to transport the frame Rf and the wafer We from the cassette storage portion 21 to the conveying mechanism 23, respectively. The robot 22 is configured to transport the wafer We attached to the frame Rf from the conveying mechanism 23 to the cassette storage portion 21. The conveying mechanism 23 is configured to transport the wafer We to a position where the protective tape attaching portion 24 can attach the protective tape Tb. The protective tape attaching section 24 is configured to attach the protective tape Tb to the wafer We transported by the transport mechanism 23, and to attach the frame Rf to the protective tape Tb.

<Cutting device>

The cutting device 3 is configured to form a modified portion inside the wafer We for dividing the wafer We (refer to FIG. 1 ).

Specifically, as shown in FIG. 4 , the cutting device 3 includes a cutting section 30, a cassette section 31, and a wafer conveying section 32. The cutting section 30 is configured to form a modified section by irradiating the wafer We with a laser light Ld (refer to FIG. 1 ) having a wavelength that is transparent along the cutting path Ws (dividing line). Here, the laser light Ld is a light with a wavelength in the near-infrared region. The cassette section 31 is configured to accommodate a plurality of wafers We attached to the protective tape Tb together with the frame Rf. The wafer conveying section 32 is configured to convey the wafer We attached to the protective tape Tb together with the frame Rf between the cassette section 31 and the cutting section 30.

<Grinding device>

The polishing device 4 is configured to remove the modified portion of the wafer We formed by the cutting device 3 by grinding the wafer We from the surface opposite to the electrical path surface side (see FIG. 1 ).

Specifically, as shown in FIG5 , the polishing device 4 includes a first cassette section 41, a robot 42, a plurality of adsorption holding sections 43, a plurality of grinding sections 44, a fine polishing section 45, a crystal defect forming section 46, a second cassette section 47, and a single rotary table section 48.

The first cassette section 41 is configured to accommodate the wafer We having the modified portion formed by the cutting device 3. The robot 42 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf from the first cassette section 41 to the adsorption holding section 43 at the position closest to the first cassette section 41 among the plurality of adsorption holding sections 43. In addition, the robot 42 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf after the modified portion is removed from the adsorption holding section 43 at the position closest to the second cassette section 47 among the plurality of adsorption holding sections 43 to the second cassette section 47. The plurality of adsorption holding sections 43 are configured to adsorb and hold the wafer We attached to the protective tape Tb together with the frame Rf.

The plurality of grinding parts 44 are configured to grind the back side of the wafer We on the opposite side to the electric surface We1 in stages. The plurality of grinding parts 44 have a rough grinding part 44a, a fine grinding part 44b and a fine grinding part 44c. The rough grinding part 44a is configured to grind the back side of the wafer We by a first grinding material of a first particle size. The fine grinding part 44b is configured to grind the back side of the wafer We by a second grinding material of a second particle size smaller than the first particle size. The fine grinding part 44c is configured to grind the back side of the wafer We by a third grinding material of a third particle size smaller than the second particle size.

The fine grinding section 45 is configured to grind the back of the wafer We after being ground by the plurality of grinding sections 44. The crystal defect forming section 46 is configured to form tiny crystal defects on the back of the wafer We after being ground by the fine grinding section 45. The crystal defect forming section 46 is configured to perform a so-called gettering operation. The second cassette section 47 is configured to accommodate the wafer We with crystal defects formed by the crystal defect forming section 46. The single rotating table section 48 is configured to rotate and move the plurality of adsorption holding sections 43 to positions corresponding to the plurality of grinding sections 44, the fine grinding section 45 and the crystal defect forming section 46, respectively.

<Tape changing device>

The tape replacement device 5 is configured to attach the expansion tape Te to the surface of the wafer We opposite to the electric surface We1 after the modified portion is removed from the wafer We by the polishing device 4, and to tear off the protective tape Tb attached to the electric surface We1 of the wafer We (refer to FIG. 1 ). Furthermore, the expansion tape Te is an example of a "sheet member" in the scope of the patent application.

Specifically, as shown in FIG6 , the tape replacement device 5 includes a cassette storage unit 51, a robot 52, a conveying mechanism 53, an expansion tape attachment unit 54, an ultraviolet irradiation unit 55 (see FIG7 ) and a protective tape stripping unit (not shown).

The cassette storage section 51 is configured to store a wafer We attached to the protective tape Tb together with the frame Rf, and a wafer We attached to the expansion tape Te together with the frame Rf.

The robot 52 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf from the cassette storage section 51 to the transport mechanism 53. The transport mechanism 53 is configured to transport the wafer We attached to the protective tape Tb together with the frame Rf to the expansion tape attachment section 54. The expansion tape attachment section 54 is configured to attach the frame Rf and the wafer We to both the protective tape Tb and the expansion tape Te by attaching the expansion tape Te to the surface of the frame Rf opposite to the surface to which the protective tape Tb is attached.

The robot 52 is configured to transport the wafer We attached to both the protective tape Tb and the expansion tape Te together with the frame Rf from the transport mechanism 53 to the ultraviolet irradiation unit 55. The ultraviolet irradiation unit 55 is configured to be located inside a closed structure with a door at the entrance and exit. After nitrogen is blown to remove oxygen in the ambient gas and the interior is filled with nitrogen (nitrogen is supplied to the interior, while oxygen is discharged and nitrogen is filled), ultraviolet rays are irradiated to the surface of the frame Rf attached with the protective tape Tb. In this way, the adhesive layer of the protective tape Tb is hardened. The robot 52 is configured to return the wafer We attached to both the protective tape Tb and the expansion tape Te together with the frame Rf from the ultraviolet irradiation unit 55 to the conveying mechanism 53.

The conveying mechanism 53 is configured to convey the wafer We attached to both the protective tape Tb and the expansion tape Te together with the frame Rf to the protective tape peeling section. The protective tape peeling section is configured to tear off the protective tape Tb (refer to FIG. 1 ). The robot 52 is configured to store the wafer We attached to the expansion tape Te together with the frame Rf in the cassette storage section 51 from the conveying mechanism 53.

<Expansion device>

The expansion device 6 is configured to adhere the expansion tape Te to the surface of the wafer We opposite to the electric surface We1, and then expand the expansion tape Te to divide the wafer We into a plurality of semiconductor chips Ch (refer to FIG. 1 ).

Specifically, as shown in FIG8 and FIG9, the expansion device 6 includes a box portion 601, a lifting hand portion 602, an adsorption hand portion 603, a cold air supply portion 604 (refer to FIG9), a cooling unit 605, an expansion portion 606, an expansion holding member 607, a heat shrinking portion 608 (refer to FIG9), an ultraviolet irradiation portion 609 (refer to FIG9), a squeezing portion 610 and a clamping portion 611.

The cassette section 601 is configured to accommodate a wafer ring structure W formed by attaching a frame Rf and a wafer We to an expansion tape Te. The lifting hand 602 is configured to take out the wafer ring structure W from the cassette section 601. The lifting hand 602 is configured to accommodate the wafer ring structure W in the cassette section 601. The suction hand 603 is configured to suction the frame Rf of the wafer ring structure W from above. The cold air supply section 604 is configured to supply cold air to the expansion tape Te from above when the expansion tape Te is expanded by the expansion section 606.

The cooling unit 605 is configured to cool the expansion tape Te from below. The expansion portion 606 is configured to divide the wafer We along the dicing line Ws (refer to FIG. 1 ) by expanding the expansion tape Te of the wafer ring structure W. The expansion holding member 607 is configured to press the expansion tape Te from above to prevent the expansion tape Te near the wafer We from shrinking due to the heating of the heat shrinking portion 608. The heat shrinking portion 608 is configured to shrink the expansion tape Te expanded by the expansion portion 606 by heating in a state where the gaps between the plurality of semiconductor chips Ch are maintained. The ultraviolet irradiation part 609 is configured to irradiate the expansion tape Te with ultraviolet rays so as to reduce the adhesive force of the adhesive layer of the expansion tape Te.

The squeezing part 610 is configured to further divide the wafer We along the modified part by squeezing the wafer We partially from the bottom to the side after the expansion tape Te is expanded. The clamping part 611 is configured to move the wafer ring structure W in the up and down directions while holding the frame Rf holding the wafer ring structure W. The clamping part 611 is configured to move the wafer ring structure W in the direction from the cooling unit 605 to the expansion part 606 and in the direction from the expansion part 606 to the cooling unit 605 while holding the frame Rf holding the wafer ring structure W.

(Semiconductor chip manufacturing process)

Below, referring to FIG. 10 , the overall operation of the semiconductor wafer processing system 100 is described.

In step S1, the insulating film and the inspection pattern are separated by the groove opening device 1. That is, the laser light irradiation unit 12 irradiates the laser light Lg along the cutting line Ws between the semiconductor chip Ch of the electric surface We1 of the wafer We that is not attached to the protective tape Tb together with the frame Rf, and separates the insulating film and the inspection pattern. In step S2, the wafer We and the frame Rf are attached to the protective tape Tb by the tape attaching device 2. That is, the protective tape attaching unit 24 attaches the protective tape Tb to the wafer We transported by the transport mechanism 23, and attaches the frame Rf to the protective tape Tb.

In step S3, a modified portion is formed on the wafer We by the cutting device 3. That is, the cutting portion 30 forms the modified portion by irradiating the wafer We with laser light Ld (refer to FIG. 1 ) along the cutting path Ws. In step S4, the modified portion is removed from the wafer We by the grinding device 4. That is, the back side of the wafer We opposite to the electric path We1 is ground in stages by a plurality of grinding portions 44, thereby removing the modified portion of the wafer We. In step S5, the expansion tape Te is attached to the wafer We and the frame Rf by the tape changing device 5, and then the protective tape Tb is torn off. That is, the expansion tape attaching portion 54 attaches the expansion tape Te to the frame Rf. The protective tape stripping section tears off the protective tape Tb from the wafer We attached to the frame Rf after the bonding layer of the protective tape Tb is hardened by the ultraviolet irradiation section 55.

In step S6, the expansion tape Te is expanded by the expansion device 6 to divide the wafer We into a plurality of semiconductor chips Ch. That is, the expansion tape Te abutting against the expansion part 606 is stretched downward by lowering the clamping part 611 while maintaining the frame Rf, thereby expanding the expansion tape Te. In this way, the wafer We is divided along the tortoise crack formed on the cutting path Ws of the wafer We by the tensile force generated by the expansion tape Te due to the expansion, thereby dividing a plurality of semiconductor chips Ch.

After step S6, the semiconductor chip manufacturing process is completed.

(Detailed structure of the slotting device)

As shown in FIG. 11 and FIG. 12, the slotting device 1 is configured to precisely locate the rotation angle position θr of the wafer We based on the alignment mark Ar set on the semiconductor chip Ch, so as to process the wafer We by laser light Lg. However, the alignment mark Ar is usually set for each semiconductor chip Ch cut by the vertical and horizontal cutting road Ws, so it is easy to misdetect the adjacent alignment mark Ar with the same shape, making it difficult to detect. Therefore, the slotting device 1 is configured to roughly locate the rotation angle position θr of the wafer We based on the groove Nt after detecting the groove Nt larger than the alignment mark Ar. The slotting device 1 is configured to detect the alignment mark Ar after roughly locating the rotation angle position θr of the wafer We.

Here, in the semiconductor wafer processing system 100, as an upstream step of the groove opening device 1, the semiconductor chip Ch set on the wafer We is powered on by the wafer power-on device 201. In the power-on test, in order to make the probe 201a of the wafer power-on device 201 contact the inspection pattern, the rotation angle position θr of the wafer We is relatively accurately positioned.

Therefore, in the slotting device 1, as long as the positioning accuracy of the rotation angle position θr of the wafer We in the wafer power-on device 201 can be maintained, the alignment mark Ar can be detected without performing rough positioning based on the groove Nt. In addition, in the slotting device 1, as long as the rotation angle position θr of the wafer We in the wafer power-on device 201 can be positioned, the groove Nt can be detected based on the current rotation angle position θr of the wafer We, so the time required to detect the groove Nt can be shortened. Furthermore, although the example of detecting the groove Nt for rough positioning is shown, the reference surface of the wafer We can also be detected for rough positioning.

Furthermore, in the slotting device 1, as long as the positioning accuracy of the rotation angle position θr of the wafer We in the wafer power-on device 201 can be maintained, the rough positioning can be performed in the tape attaching device 2 without using the groove Nt.

Therefore, the slotting device 1 of the present embodiment is configured to maintain the positioning accuracy of the rotation angle position θr of the wafer We in the wafer power-on device 201.

Specifically, as shown in FIG13 , the slotting device 1 includes a cassette section 11, a laser irradiation section 12, a surface coating cleaning section 13, a camera section 14, a conveying mechanism 15, a temporary placement table 16, a base 17, and a control section 18. The cassette section 11 has been described above, so the description thereof is omitted.

Here, the up-down direction is set as the Z direction, the up direction is set as the Z1 direction, and the down direction is set as the Z2 direction. The horizontal direction perpendicular to the Z direction is set as the X direction, one direction of the X direction is set as the X1 direction, and the other direction of the X direction is set as the X2 direction. In addition, the horizontal direction perpendicular to the X direction is set as the Y direction, one direction of the Y direction is set as the Y1 direction, and the other direction of the Y direction is set as the Y2 direction.

(Laser light irradiation part)

The laser irradiation unit 12 is configured to perform a groove processing, that is, to irradiate the laser light Lg along the cutting road Ws between the semiconductor chips Ch of the electrical surface We1 of the wafer We, to form a groove that separates the insulating film and the inspection pattern. The direction in which each of the multiple cutting roads Ws along the wafer We extends is the processing direction. Here, the processing direction is the Y1 direction or the Y2 direction.

The laser irradiation unit 12 includes a slotting fixture 12a, a frame 12b, a laser unit 12c, an imaging unit 12d, and an imaging unit 12e.

The slotting fixture table 12a is configured to hold the wafer We transported by the transport mechanism 15 by adsorbing it when the slotting process is performed by the laser light irradiation unit 12, and to rotate or move the wafer We in the horizontal direction (at least one of the X direction and the Y direction). That is, the slotting fixture table 12a is configured to hold the wafer We by adsorbing the lower surface of the wafer We. The slotting fixture table 12a is configured to rotate relative to the laser unit 12c or move relatively in the horizontal direction in the state where the wafer We is adsorbed.

The slotting fixture table 12a has a slotting wafer holding table 121a, a rotating portion (not shown), a Y-direction moving portion 122a, and an X-direction moving portion 123a. The slotting wafer holding table 121a is a table formed with an adsorption hole for adsorbing the wafer We for holding. A recess 1211a is formed on the slotting wafer holding table 121a into which the U-shaped hand 15a described below of the conveying mechanism 15 can be inserted. The recess 1211a is formed by making the surface (upper surface) on the Z1 direction side of the slotting wafer holding table 121a concave toward the Z2 direction (below). When the U-shaped hand 15a described below is inserted, the recess 1211a extends along the X direction. When the U-shaped hand 15a described below is inserted, a plurality of recesses 1211a (2) are arranged along the Y direction. Furthermore, the number of recessed portion 1211a may be one or more than three. Furthermore, recessed portion 1211a is an example of the "second recessed portion" in the scope of the patent application. Moreover, the U-shaped hand 15a is an example of the "hand" in the scope of the patent application.

The rotating part is configured to rotate the slotting wafer holding table 121a in the circumferential direction around the rotation axis parallel to the Z direction. The rotating part is mounted on the Z2 direction side of the slotting wafer holding table 121a. The Y-direction moving part 122a is configured to move the rotating part in the Y1 direction or the Y2 direction. The Y-direction moving part 122a is mounted on the Z2 direction side of the rotating part. The X-direction moving part 123a is configured to move the Y-direction moving part 122a in the X1 direction or the X2 direction. The X-direction moving part 123a is mounted on the Z2 direction side of the Y-direction moving part 122a and is mounted on the surface of the base 17 on the Z1 direction side.

The frame 12b is fixed to the base 17. The laser unit 12c, the imaging unit 12d and the imaging unit 12e are fixed to the frame 12b. The laser unit 12c is configured to irradiate the laser light Lg that separates the insulating film and the inspection pattern. The imaging unit 12d and the imaging unit 12e are respectively configured to photograph the wafer We held on the slotting fixture table 12a. The imaging unit 12d and the imaging unit 12e are both near-infrared imaging cameras. The imaging unit 12d and the imaging unit 12e can move in the Z1 direction or the Z2 direction, respectively.

(Electrode surface coating cleaning section)

As shown in FIG. 14 , the surface coating cleaning section 13 is configured to form, remove and dry a protective film on the surface coating We1 of the wafer We. Specifically, the surface coating cleaning section 13 includes a resin coating nozzle 13a, a first rotating mechanism 13b, a cleaning nozzle 13c, a second rotating mechanism 13d, a drying nozzle 13e, a third rotating mechanism 13f, a scattering suppression shield 13g and a rotating table 13h. Furthermore, for the sake of convenience, FIG. 13 does not illustrate the structure other than the surface coating cleaning section 13.

<Resin coating nozzle and first rotating mechanism>

The resin coating nozzle 13a is configured to coat the water-soluble resin on the electric surface We1 of the wafer We to form a protective film. The resin coating nozzle 13a is configured to drip the water-soluble resin in the Z2 direction (downward direction) from the front end portion on the opposite side to the first rotating mechanism 13b. The resin coating nozzle 13a is connected to a water-soluble resin storage portion not shown. The first rotating mechanism 13b is configured to rotate the resin coating nozzle 13a to either a coating position Pr1 for coating the water-soluble resin on the electric surface We1 of the wafer We, or a first retreat position Pr2 for retreating from the coating position Pr1. The coating position Pr1 is the position of the resin coating nozzle 13a in a state where the front end of the resin coating nozzle 13a is arranged on the rotation center axis Cs of the rotating table 13h. The first retreat position Pr2 is the position of the resin coating nozzle 13a in a state where the front end of the resin coating nozzle 13a is arranged outside the rotating table 13h. The first rotating mechanism 13b is configured to rotate the resin coating nozzle 13a by the driving force of the motor (not shown).

<Cleaning nozzle and second rotating mechanism>

The cleaning nozzle 13c is configured to supply cleaning water (water or hot water) to the electrical surface We1 of the wafer We to remove the water-soluble resin applied by the resin coating nozzle 13a. The cleaning nozzle 13c is configured to drip cleaning water in the Z2 direction (downward direction) from the front end portion on the opposite side to the second rotating mechanism 13d. The cleaning nozzle 13c is connected to a cleaning water storage portion not shown. The second rotating mechanism 13d is configured to rotate the cleaning nozzle 13c to either a supply position Pw1 for supplying cleaning water to the electrical surface We1 of the wafer We, or a second retreat position Pw2 for retreating the cleaning nozzle 13c from the supply position Pw1. The supply position Pw1 is the position of the cleaning nozzle 13c in a state where the front end of the cleaning nozzle 13c is arranged on the rotation center axis Cs of the turntable 13h. The second retreat position Pw2 is the position of the cleaning nozzle 13c in a state where the front end of the cleaning nozzle 13c is arranged outside the turntable 13h. The second rotating mechanism 13d is configured to rotate the cleaning nozzle 13c by the driving force of the motor (not shown).

<Dry nozzle and third rotating mechanism>

The dry nozzle 13e is configured to blow warm air to dry the electric surface We1 of the wafer We. The dry nozzle 13e is configured to blow warm air in the Z2 direction (downward direction) from the front end portion on the opposite side to the third rotating mechanism 13f. The dry nozzle 13e is connected to a warm air supply unit not shown. The third rotating mechanism 13f is configured to rotate the dry nozzle 13e to either an air supply position Pb1 for blowing warm air to the electric surface We1 of the wafer We, or a third retreat position Pb2 for retreating the dry nozzle 13e from the air supply position Pb1. The air supply position Pb1 is the position of the dry nozzle 13e in a state where the front end portion of the dry nozzle 13e is arranged on the rotation center axis Cs of the rotating table 13h. The third retreat position Pb2 is the position of the dry nozzle 13e in which the front end of the dry nozzle 13e is arranged outside the rotating table 13h. The third rotating mechanism 13f is configured to rotate the dry nozzle 13e by the driving force of the motor (not shown).

In this way, the resin coating nozzle 13a, the cleaning nozzle 13c and the drying nozzle 13e are configured to rotate independently of each other.

<Dispersion suppression shield>

As shown in FIG. 15 , the scattering suppression shield 13g is configured to suppress the liquid including at least one of the water-soluble resin and the cleaning water on the electric surface We1 of the wafer We from scattering from the electric surface We1 when the wafer We is rotated by the rotating table 13h. That is, the scattering suppression shield 13g has an inner side surface on the rotation center axis Cs side of the rotating table 13h, and the inner side surface is configured to receive the liquid on the electric surface We1 of the wafer We that scatters from the electric surface We1, and to make the received liquid flow in the Z2 direction (downward).

<Turntable>

The rotating table 13h is configured to hold the wafer We and rotate it when a protective film is formed to protect the electrical path We1 of the wafer We from being affected by the residue (debris) generated when the groove is formed by the laser light irradiation unit 12 before the groove is formed. The rotating table 13h is configured to hold the wafer We and rotate it when the protective film formed is dried before the groove is formed by the laser light irradiation unit 12.

Furthermore, the rotating table 13h is configured to hold the wafer We and rotate it when the protective film is removed after the groove processing is performed by the laser light irradiation unit 12. Furthermore, the rotating table 13h is configured to hold the wafer We and rotate it when the electrical path surface We1 is dried after the groove processing is performed by the laser light irradiation unit 12.

Specifically, as shown in FIG. 16 , the rotating table 13h has a rotating wafer holding table 131h, a rotating drive unit 132h, a rotating angle position detection unit 133h, and a Z-direction moving mechanism 134h.

The rotating wafer holding table 131h is configured to adsorb and hold the wafer We transported by the conveying mechanism 15. The rotating wafer holding table 131h is a table formed with adsorption holes for adsorbing and holding the wafer We. The rotating wafer holding table 131h is provided with a recess 1311h (refer to FIG. 14 ) into which the U-shaped hand 15a described below of the conveying mechanism 15 can be inserted. The recess 1311h is formed by making the surface (upper surface) of the rotating wafer holding table 131h on the Z1 direction side concave toward the Z2 direction (below). When the U-shaped hand 15a is inserted, the recess 1311h extends along the X direction. When the U-shaped hand 15a is inserted, a plurality of recesses 1311h (two) are arranged along the Y direction. Furthermore, the number of recesses 1311h may be one or more than three. Furthermore, the recess 1311h is an example of the "first recess" in the scope of the patent application.

The rotation drive unit 132h is configured to rotate the rotation wafer holding table 131h based on the control signal received from the control unit 18. The rotation drive unit 132h has a motor as a drive source. The rotation drive unit 132h is configured to rotate the rotation wafer holding table 131h in the R direction (circumferential direction) around the rotation center axis Cs. That is, the rotation drive unit 132h rotates the rotation wafer holding table 131h in the R1 direction or the R2 direction.

The rotation angle position detection unit 133h is used to detect the rotation angle position θr of the wafer We held on the turntable 13h in the rotation direction (R direction) of the turntable 13h (refer to FIG. 11). Specifically, the rotation angle position detection unit 133h has an encoder 1331h and a counting unit 1332h.

The encoder 1331h is configured to detect the rotation angle of the rotating table 13h. That is, the encoder 1331h is configured to send a pulse wave to the counting unit 1332h whenever the rotation of the rotating table 13h at a fixed rotation angle is detected. As an example, the encoder 1331h is configured to send a pulse wave to the counting unit 1332h whenever the rotation of the rotating table 13h by 0.1 degrees is detected. The encoder 1331h is configured by an optical rotary encoder (transmission type or reflection type), an optical linear encoder (transmission type or reflection type), or a magnetic linear encoder, etc.

The counting unit 1332h has a first count value that increases or decreases the rotation angle of the rotating table 13h based on the pulse wave received from the encoder 1331h. The first count value has, for example, a 16-bit resolution. The first count value can count the rotation of the fixed rotation angle of the rotating table 13h to a maximum of 65536. That is, each time the first count value increases, the rotation angle increases (or decreases) by the fixed rotation angle. The counting unit 1332h has a second count value that increases or decreases the number of rotations of the rotating table 13h based on the first count value. The second count value has, for example, a 12-bit resolution. In this case, the number of rotations of the rotating table 13h can be counted to a maximum of 4096.

The Z-direction moving mechanism 134h is configured to move the rotating wafer holding table 131h, the rotating drive unit 132h, and the rotating angle position detection unit 133h in an integrated manner in the Z1 direction or the Z2 direction. Specifically, the Z-direction moving mechanism 134h has a piston and a cylinder.

The Z-direction moving mechanism 134h is configured to accommodate the protruding piston in the cylinder based on the control signal from the control unit 18, so that the rotating wafer holding table 131h, the rotating driving unit 132h and the rotating angle position detection unit 133h are moved in the Z2 direction as a whole. Thereby, the rotating wafer holding table 131h moves to the coating and cleaning height position H1 surrounded by the scattering suppression shield 13g. At the coating and cleaning height position H1, the formation of the protective film on the electrical surface We1 of the wafer We, the drying of the protective film, the removal of the protective film, and the drying of the electrical surface We1 after the removal of the protective film are performed.

As shown in FIG. 16 , the Z-direction moving mechanism 134h is configured to cause the piston to protrude from the cylinder based on a control signal from the control unit 18, thereby causing the rotating wafer holding table 131h, the rotating drive unit 132h, and the rotating angle position detection unit 133h to move in the Z1 direction as a whole. As a result, the rotating wafer holding table 131h moves to the loading and unloading height position H2 protruding from the scattering suppression shield 13g. At the loading and unloading height position H2, the transport mechanism 15 performs various actions of loading and unloading the wafer We relative to the rotating wafer holding table 131h.

(Photography Department)

As shown in FIG. 17 , the imaging unit 14 is configured to photograph the wafer We adsorbed on the rotating wafer holding table 131h from the Z1 direction side. The imaging unit 14 is configured to photograph the wafer We adsorbed on the rotating wafer holding table 131h from the Z1 direction side to measure the thickness of the protective film applied on the wafer We adsorbed on the rotating wafer holding table 131h. The image captured by the imaging unit 14 approaches black (brightness value is 0) as the thickness of the protective film applied on the wafer We increases, and approaches white (brightness value is 255) as the thickness of the protective film applied on the wafer We decreases. Here, the imaging unit 14 is configured to photograph the wafer We from the Z1 direction side when the rotating wafer holding table 131h is stopped.

(Transportation mechanism)

The transport mechanism 15 is configured to transport the wafer We held by the U-shaped hand 15a described below. Specifically, the transport mechanism 15 has a U-shaped hand 15a, a first arm 15b, a second arm 15c, and a Z-direction moving mechanism (not shown).

The U-shaped hand 15a is configured to hold the back side of the wafer We opposite to the electrical path We1. The U-shaped hand 15a is a robot with a holding hole for holding the wafer We by holding it at least in the portion extending in a straight line.

The first arm portion 15b connects the U-shaped hand portion 15a and the second arm portion 15c. The second arm portion 15c connects the first arm portion 15b and a mounting member (not shown). That is, the U-shaped hand portion 15a is connected to the front end portion of the first arm portion 15b in a manner that allows it to rotate around a rotation axis parallel to the Z direction. Furthermore, the base end portion of the first arm portion 15b is connected to the front end portion of the second arm portion 15c in a manner that allows the first arm portion 15b to move in the extension direction of the first arm portion 15b. Furthermore, the base end portion of the second arm portion 15c is mounted on the mounting member (not shown) in a manner that allows it to move in the Z1 direction, the Z2 direction, and the extension direction of the second arm portion 15c. The Z-direction moving mechanism (not shown) is configured to move the second arm 15c in the Z1 direction or the Z2 direction so that the U-shaped hand 15a and the first arm 15b move integrally in the Z1 direction or the Z2 direction.

With the above configuration, the transport mechanism 15 is configured to move the U-shaped hand 15a, the first arm 15b and the second arm 15c while the wafer We is adsorbed, so that the U-shaped hand 15a is aligned with the position of the concave portion 1311h of the rotating wafer holding table 131h, and then the wafer We is moved in or out relative to the rotating wafer holding table 131h. Also, as shown in FIG. 18 , the transport mechanism 15 is configured to move the U-shaped hand 15a, the first arm 15b and the second arm 15c while the wafer We is adsorbed, so that the U-shaped hand 15a is aligned with the position of the concave portion 1211a of the slotting wafer holding table 121a, and then the wafer We is moved in or out relative to the slotting wafer holding table 121a.

(Temporary placement table)

The temporary placement table 16 is configured to absorb and hold the wafer We transported by the transport mechanism 15. Here, the temporary placement table 16 is configured to absorb and hold the wafer We transported by the transport mechanism 15 after the groove processing is performed by the laser light irradiation unit 12 and before the protective film of the electrical path We1 of the wafer We is removed.

Specifically, the temporary placement table 16 has a temporary placement wafer holding table 16a and a base (not shown). The temporary placement wafer holding table 16a is fixed to the end of the base on the Z1 direction side.

The temporary placement wafer holding table 16a is a table formed with an adsorption hole for adsorbing the wafer We for holding. The temporary placement wafer holding table 16a has a recess 161a for inserting the U-shaped hand 15a of the conveying mechanism 15. The recess 161a is formed by making the surface (upper surface) of the temporary placement wafer holding table 16a on the Z1 direction side concave toward the Z2 direction (below). The recess 161a extends along the X direction. The recess 161a is arranged in a plurality (2) along the Y direction. Furthermore, the recess 1311h can also be 1 or more than 3. Furthermore, the recess 161a is an example of the "third recess" in the scope of the patent application.

(Base)

The base 17 is equipped with a laser irradiation unit 12, a surface coating cleaning unit 13, a conveying mechanism 15, and a temporary placement table 16.

(Control Department)

The control unit 18 includes a CPU (Central Processing Unit), and a memory unit having ROM (Read Only Memory), RAM (Random Access Memory), and SSD (Solid State Drive). The memory unit stores a control program for controlling the slotting device 1. The control program has a release position adjustment control, which is used to adjust the release position P2 of the wafer We in the R direction (rotation direction) when the rotary table 13h releases the wafer We.

(Position adjustment control when released)

As shown in FIG. 19 and FIG. 20, the control unit 18 is configured to adjust the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position of the wafer We in the R direction.

That is, the control unit 18 of the present embodiment is configured to perform the following control: based on the detection result of the rotation angle position detection unit 133h and the initial position P1, the rotation angle position θr of the wafer We is adjusted, and the above-mentioned initial position P1 is the above-mentioned target rotation angle position in the R direction of the wafer We when the wafer We is held by the turntable 13h. Here, the control unit 18 is configured to perform the following control: based on the detection result of the rotation angle position detection unit 133h and the initial position P1, the release time position P2 in the R direction of the wafer We when the turntable 13h releases the wafer We is adjusted. That is, the control unit 18 is configured to perform the following control: based on the detection result of the rotation angle position detection unit 133h and the initial position P1, the release time position P2 is adjusted in a manner that aligns with the initial position P1. Here, as an example, the initial position P1 is a state in which the groove Nt of the wafer We faces the Z1 direction.

Specifically, the control unit 18 is configured to perform the following control: after the water-soluble resin is dripped from the resin coating nozzle 13a, the rotating table 13h is rotated, and the water-soluble resin is covered on the electric surface We1 of the wafer We by the centrifugal force. The control unit 18 is configured to perform the following control: after the water-soluble resin is controlled to cover the electric surface We1 of the wafer We, the rotating table 13h is rotated, and warm air is blown from the drying nozzle 13e, thereby hardening the water-soluble resin on the electric surface We1 of the wafer We. The initial position P1 and the release position P2 of the electric path We1 of the wafer We covered with the water-soluble resin are made consistent by rotating the rotating table 13h from the controlled coating completion position P3 (refer to FIG. 21 ) of the water-soluble resin curing to the R2 direction (or the R1 direction).

Furthermore, the control unit 18 is configured to perform the following control: after the cleaning water drips from the cleaning nozzle 13c, the rotating table 13h is rotated, and the cleaning water is spread on the electric surface We1 of the wafer We by using the centrifugal force. The control unit 18 is configured to perform the following control after the cleaning water is spread: the rotating table 13h is rotated, and warm air is blown from the drying nozzle 13e at the same time, thereby drying the electric surface We1 of the wafer We. The initial position P1 of the control of cleaning with cleaning water and the release position P2 become consistent by rotating the rotating table 13h from the drying completion position P4 of the control of drying the electric surface We1 (refer to Figure 22) to the R2 direction (or R1 direction).

In order to perform the above control, as shown in FIG23, the control unit 18 is configured to perform the following control: based on the input operation from the user, the speed (rotation speed) and the number of rotations when the rotation control of the rotating table 13h is performed are obtained. The control unit 18 is configured to perform control by multiplying the obtained number of rotations by 360 degrees to obtain the total rotation angle Tr (Ts). The speed and number of rotations in the rotation control can be set separately for coating, drying after coating, washing, and drying after washing.

The speed and rotation times in rotation control can be set in the first, second and third stages.

That is, during coating, if the water-soluble resin is dripped onto the electric surface We1 while the rotating table 13h is rotating at high speed, the water-soluble resin may not be spread all over the electric surface We1 to cover it. In this case, the rotating table 13h needs to be rotated at a low speed to adjust the thickness of the coating. During coating, after the rotating table 13h is rotated and the electric surface We1 is covered with the water-soluble resin, if the thickness of the coating is adjusted by using the centrifugal force, the rotating table 13h needs to be rotated at a high speed according to the viscosity of the coating.

Furthermore, during cleaning, if cleaning water is dripped onto the electric surface We1 while the rotating table 13h is rotating at high speed, the cleaning water may not be spread over the electric surface We1. In this case, the rotating table 13h needs to be rotated at a low speed. During cleaning, when the rotating table 13h is rotated so that the cleaning water spreads over the electric surface We1, the rotating table 13h needs to be rotated at a high speed in order to shake off the cleaning water.

In order to cope with the above situation, the speed and number of rotations in the rotation control can be set separately in the first stage, the second stage and the third stage. In addition, there is no need to increase the speed in the drying after lamination and the drying after washing, so the user can also set only the first stage.

As shown in Figures 24 and 25, the control unit 18 is configured to control the rotating table 13h during each step of coating, drying after coating, washing, and drying after washing based on the respective settings of the speed and the number of rotations in the rotation control. Furthermore, the acceleration when the rotating table 13h is accelerated is stored in the memory unit according to the preset value. In addition, the deceleration when the rotating table 13h is decelerated is stored in the memory unit according to the preset value.

<Lamination and drying after lamination>

Specifically, as shown in FIG. 24 , the control unit 18 is configured to transport the wafer We in the wafer power supply device 201 with the rotation angle position θr maintained at a constant positioning accuracy from the cassette unit 11 to the turntable 13h by the U-shaped hand 15a while maintaining the rotation angle at the release position P2 unchanged, for coating and drying after coating. Here, the control unit 18 is configured to perform the following control: based on the wafer We being held by the turntable 13h, the number of rotations obtained and recorded by the counting unit 1332h of the rotation angle position detection unit 133h is restored to the initial value. Here, the so-called maintaining the rotation angle unchanged means at least maintaining the rotation angle of the wafer We positioned at the release position P2.

The control unit 18 is configured to control the rotation speed of the turntable 13h used for forming the protective film (coating and curing) based on the rotation angle of the turntable 13h detected by the encoder 1331h. That is, the control unit 18 is configured to control the rotation speed of the turntable 13h by feedback control. In this case, the control unit 18 is configured to control the rotation speed of the turntable 13h to a high speed (speed C2V of the second stage) after rotating the turntable 13h at a low speed (speed C1V of the first stage) as described above when forming the protective film. In addition, when forming the protective film, the counting unit 1332h is configured to perform addition operation on the number of rotations of the turntable 13h.

Here, the control unit 18 is configured to perform the following control when the coating is completed: in a state where the rotating table 13h stops rotating, the thickness of the protective film applied on the wafer We is checked based on the image captured by the imaging unit 14. The control unit 18 is configured to perform the following control: when the inspection result shows that the thickness of the protective film is small, the rotating table 13h is rotated after further dripping the water-soluble resin, and when the inspection result shows that the thickness of the protective film is large, the rotating table 13h is rotated. In addition, when adjusting the protective film, the counting unit 1332h is configured to perform a subtraction operation on the number of rotations of the rotating table 13h.

Furthermore, the control unit 18 is configured to perform the following control: after the operation including the formation of the protective film by rotating the wafer We held by the rotating table 13h is completed, the rotating table 13h is rotated from the rotation angle position θr at the end of the operation (for example, the coating completion position P3 in FIG. 21) to the release position P2 (refer to FIG. 20). That is, the control unit 18 is configured to perform control to adjust the release position P2 based on the rotation angle and initial position P1 of the rotating table 13h detected by the encoder 1331h.

Specifically, the control unit 18 is configured to perform control such that the total rotation angle Tr is obtained by adding the number of rotations Tr1, the number of rotations Tr2, the number of rotations Tr3, the number of rotations Tr4, the number of rotations Tr5, the number of rotations Tr6, and the number of rotations Tr7. The control unit 18 is configured to perform control such that the target rotation angle for aligning the lamination completion position P3 with the release position P2 (initial position P1) is obtained by subtracting the remainder obtained by dividing the total rotation angle Tr by 360 degrees from 360 degrees. That is, the calculation is performed according to the target rotation angle = 360 degrees - ((rotation number Tr1 + rotation number Tr2 + rotation number Tr3 + rotation number Tr4 + rotation number Tr5 + rotation number Tr6 + rotation number Tr7) × (360 degrees) × (mod360 degrees)). The control unit 18 is configured to perform the following control: by rotating the rotating table 13h by the target rotation angle, the release position P2 is adjusted to align with the initial position P1.

The control unit 18 is configured to transport the wafer We positioned at the release position P2 from the rotating table 13h to the wafer holding table 121a (laser irradiation unit 12) for grooving by the U-shaped hand 15a while maintaining the rotation angle unchanged, so as to perform the grooving process in the laser irradiation unit 12.

<Wash and dry>

Specifically, as shown in FIG. 25, the control unit 18 is configured to transport the wafer We in the laser irradiation unit 12 with the rotation angle position θr of the wafer We maintained unchanged by the U-shaped hand 15a from the wafer holding table 121a for grooving to the rotating table 13h while maintaining the rotation angle unchanged, so as to be cleaned and dried after cleaning. Here, the control unit 18 is configured to perform the following control: based on the wafer We being held by the rotating table 13h, the number of rotations obtained and recorded by the counting unit 1332h of the rotation angle position detection unit 133h is restored to the initial value. Here, the so-called maintaining the rotation angle unchanged means at least maintaining the rotation angle of the wafer We positioned in the laser irradiation unit 12.

The control unit 18 is configured to control the rotation speed of the turntable 13h used for washing and drying the electric surface We1 based on the rotation angle of the turntable 13h detected by the encoder 1331h. That is, the control unit 18 is configured to control the rotation speed of the turntable 13h by feedback control. In this case, the control unit 18 is configured to control the rotation speed of the turntable 13h to a high speed (the speed W2V of the second stage) after rotating the turntable 13h at a low speed (the speed W1V of the first stage) as described above when washing the electric surface We1. In addition, when washing the electric surface We1, the counting unit 1332h is configured to perform addition operation on the number of rotations of the turntable 13h.

The control unit 18 is configured to perform the following control: after the operation including cleaning and drying of the surface We1 by rotating the wafer We held by the rotating table 13h is completed, the rotating table 13h is rotated from the rotation angle position θr at the end of the operation (for example, the drying completion position P4 in Figure 22) to the release position P2 (refer to Figure 20). That is, the control unit 18 is configured to perform control to adjust the release position P2 based on the rotation angle and initial position P1 of the rotating table 13h detected by the encoder 1331h.

Specifically, the control unit 18 is configured to perform control as follows: by adding the number of rotations Ts1, the number of rotations Ts2, the number of rotations Ts3, the number of rotations Ts4, the number of rotations Ts5, the number of rotations Ts6, and the number of rotations Ts7, a total rotation angle Ts is obtained. The control unit 18 is configured to perform control as follows: by subtracting the remainder obtained by dividing the total rotation angle Ts by 360 degrees from 360 degrees, a target rotation angle for aligning the drying completion position P4 with the release position P2 (initial position P1) is obtained. That is, the calculation is performed according to the target rotation angle = 360 degrees - ((rotation times Ts1 + rotation times Ts2 + rotation times Ts3 + rotation times Ts4 + rotation times Ts5 + rotation times Ts6 + rotation times Ts7) × (360 degrees) × (mod360 degrees)). The control unit 18 is configured to perform the following control: by rotating the rotating table 13h by the target rotation angle, the release position P2 is adjusted to align with the initial position P1.

The control unit 18 is configured to transport the wafer We positioned at the release position P2 from the rotating table 13h to the cassette unit 11 by the U-shaped hand 15a while maintaining the rotation angle unchanged, so as to accommodate it in the cassette unit 11. Here, the so-called maintaining the rotation angle unchanged means at least maintaining the rotation angle of the wafer We positioned at the release position P2.

(Position adjustment processing when releasing)

Here, referring to FIG. 26, the release position adjustment process of aligning the release position P2 in the R direction of the wafer We with the initial position P1 is described.

As shown in FIG. 26 , in step S101, the control unit 18 initializes (resets) the rotation angle position detection unit 133h (counting unit 1332h) based on the fact that the turntable 13h has held (absorbed) the wafer We. In step S102, after initialization, the control unit 18 counts the number of rotations of the turntable 13h while rotating the turntable 13h, thereby coating and curing the water-soluble resin on the electrical surface We1 (or cleaning the coated water-soluble resin and drying the electrical surface We1). In step S103, the control unit 18 obtains the target rotation angle based on the total rotation angle Tr (Ts). In step S104, the control unit 18 rotates the rotating table 13h based on the target rotation angle to adjust the release position P2, and then ends the release position adjustment process.

Thus, as described above, the semiconductor chip Ch is manufactured by the slotting device 1 having the laser light irradiation unit 12, the rotating table 13h, the rotation angle position detection unit 133h and the control unit 18. The control unit 18 controls the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position in the R direction of the wafer We.

In addition, the semiconductor chip manufacturing process (the manufacturing method of the semiconductor chip Ch) includes step S1, that is, based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position in the R direction of the wafer We, the rotation angle position θr of the wafer We is adjusted. The above-mentioned rotation angle position detection unit 133h is used to detect the rotation angle position θr in the R direction of the turntable 13h of the wafer We held on the turntable 13h. The above-mentioned turntable 13h holds the wafer We and rotates it when forming a protective film to protect the electrical path We1 of the wafer We from being affected by the residue. The above-mentioned residue is generated when the groove processing is performed by the laser light irradiation unit 12. The method for manufacturing a semiconductor chip Ch includes step S5, i.e., irradiating a laser beam Ld along each of a plurality of scribe lines Ws of a wafer We provided with a plurality of semiconductor chips Ch. The method for manufacturing a semiconductor chip Ch includes step S6, i.e., using an expansion unit 606 to expand an expansion tape Te, thereby dividing the wafer We into a plurality of semiconductor chips Ch along each of the plurality of scribe lines Ws.

(Effects of this implementation method)

In this implementation method, the following effects can be obtained.

In the present embodiment, as described above, the slotting device 1 includes the control unit 18, and the control unit 18 controls the adjustment of the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position in the R direction of the wafer We. In this way, by adjusting the rotation angle position θr of the wafer We, the rough positioning of the same degree as the rough positioning of the rotation angle position θr of the wafer We can be performed in the laser light irradiation unit 12, which is implemented based on the rotation angle position of the groove Nt or the reference surface provided on the outer periphery of the wafer We. As a result, there is no need to detect the groove Nt or the reference surface. Based on the wafer We positioned at the adjusted rotation angle position θr, the position of the alignment mark Ar of the wafer We can be obtained, thereby shortening the time required to adjust the rotation angle position θr of the wafer We.

In the present embodiment, as described above, the control unit 18 includes the control unit 18, and the control unit 18 performs the following control: based on the detection result of the rotation angle position detection unit 133h and the initial position P1, the release position P2 in the R direction of the wafer We when the rotation table 13h releases the wafer We is adjusted, and the initial position P1 is the target rotation angle position in the R direction of the wafer We when the rotation table 13h holds the wafer We. In this way, by adjusting the wafer We to the release position P2, the rough positioning of the same degree as the rough positioning of the rotation angle position θr of the wafer We can be performed in the laser light irradiation unit 12, and the rough positioning of the rotation angle position θr of the wafer We is performed based on the rotation angle position of the groove Nt or the reference surface provided on the outer periphery of the wafer We. As a result, the position of the alignment mark Ar of the wafer We can be obtained based on the wafer We positioned at the release position P2 without the need to detect the groove Nt or the reference surface, thereby shortening the time required to adjust the rotation angle position θr of the wafer We.

Furthermore, in the present embodiment, as described above, the slotting device 1 is configured to transport the wafer We positioned at the release position P2 based on the detection result of the rotation angle position detection unit 133h and the initial position P1 from the rotating table 13h to the laser light irradiation unit 12 while maintaining the rotation angle unchanged. In this way, the wafer We can be transported to the laser light irradiation unit 12 while maintaining the rotation angle of the release position P2 unchanged. Therefore, in the laser light irradiation unit 12, there is no need to detect the groove Nt or the reference surface. Based on the wafer We maintaining the rotation angle of the release position P2 unchanged, the position of the alignment mark Ar of the wafer We can be obtained. As a result, in the laser light irradiation unit 12, the time required to adjust the rotation angle position θr of the wafer We can be shortened.

Furthermore, in the present embodiment, as described above, the slotting device 1 has a cassette section 11 for accommodating the wafer We. The slotting device 1 is configured to transport the wafer We positioned at the release position P2 based on the detection result of the rotation angle position detection section 133h and the initial position P1 from the turntable 13h to the cassette section 11 while maintaining the rotation angle unchanged. In this way, the wafer We can be transported to the cassette section 11 while maintaining the rotation angle of the release position P2 unchanged. Therefore, in the next step of the slotting device 1, there is no need to detect the groove Nt or the reference surface. Based on the wafer We maintaining the rotation angle of the release position P2 unchanged, the position of the alignment mark Ar of the wafer We can be obtained. As a result, in the next step of the slotting device 1, the time required to adjust the rotation angle position θr of the wafer We can be shortened.

Furthermore, in the present embodiment, as described above, the control unit 18 is configured to perform the following control: based on the detection result of the rotation angle position detection unit 133h and the initial position P1, the release position P2 is adjusted so as to align with the initial position P1. In this way, the positioning accuracy of the wafer We at the initial position P1 and the positioning accuracy of the wafer We at the release position P2 can be maintained at the same level, so when the positioning accuracy of the wafer We in the previous step of the slotting device 1 is high-precision, the positioning accuracy of the wafer We at the release position P2 can also be maintained at high precision.

Furthermore, in the present embodiment, as described above, the rotation angle position detection unit 133h includes an encoder 1331h for detecting the rotation angle of the rotating table 13h. The control unit 18 is configured to perform control to adjust the release position P2 based on the rotation angle and initial position P1 of the rotating table 13h detected by the encoder 1331h. In this way, the initial position P1 of the wafer We can be easily obtained by the encoder 1331h, and the wafer We can be adjusted to the release position P2, thereby easily realizing the slotting device 1 that can adjust the wafer We to the release position P2.

Furthermore, in the present embodiment, as described above, the rotating table 13h is configured to hold the wafer We and rotate it when the protective film is removed and the electric path surface We1 is dried after the groove processing is performed by the laser light irradiation unit 12. The control unit 18 is configured to control the rotation speed of the rotating table 13h for the formation of the protective film, the removal of the protective film, and the drying of the electric path surface We1 after the protective film is removed, based on the rotation angle of the rotating table 13h detected by the encoder 1331h. In this way, not only can the initial position P1 of the wafer We be obtained by the encoder 1331h, and the wafer We can be adjusted to the release position P2, but the rotation speed of the rotating table 13h can also be controlled, so compared with the case of using individual sensors, the increase in the number of parts of the groove device 1 can be suppressed.

Furthermore, in the present embodiment, as described above, the control unit 18 is configured to perform the following control: after the operation including the formation of the protective film by rotating the wafer We held by the rotating table 13h is completed, the rotating table 13h is rotated from the rotation angle position θr at the end of the operation to the release position P2. In this way, after forming a suitable protective film on the electrical surface We1 of the wafer We, the wafer We can be adjusted to the release position P2, so that the protective film can be properly formed and the wafer We can be properly adjusted to the release position P2.

In addition, in the present embodiment, as described above, the slotting device 1 has a transport mechanism 15, and the transport mechanism 15 includes a U-shaped hand 15a that absorbs and holds the back side of the wafer We opposite to the electric surface We1, and is configured to transport the wafer We held by the U-shaped hand 15a. The rotating table 13h includes a rotating wafer holding table 131h, and the rotating wafer holding table 131h is configured to absorb and hold the wafer We transported by the transport mechanism 15, and is formed with a recess 1311h into which the U-shaped hand 15a can be inserted. Here, the U-shaped hand 15a is inserted into the recess 1311h to hold the wafer We by the rotating wafer holding table 131h, so the posture of the U-shaped hand 15a when the rotating wafer holding table 131h holds the wafer We is preset. Therefore, the U-shaped hand 15a holds the wafer We in a fixed position, so the wafer We held by the U-shaped hand 15a is also held in a fixed position. As a result, the U-shaped hand 15a can transport the wafer We while maintaining the rotation angle of the position P2 when released.

In addition, in the present embodiment, as described above, the slotting device 1 is provided with a slotting fixture table 12a, which, when the slotting process is performed by the laser light irradiation unit 12, absorbs and holds the wafer We transported by the transport mechanism 15, and rotates or moves the wafer We in the horizontal direction. The slotting fixture table 12a includes a slotting wafer holding table 121a having a recess 1211a. Here, the U-shaped hand 15a is inserted into the recess 1211a to hold the wafer We by the slotting fixture table 12a, so the posture of the U-shaped hand 15a when the slotting fixture table 12a holds the wafer We is preset. Therefore, the wafer We is transported from the U-shaped hand 15a to the slotting fixture table 12a in a fixed posture, so that the slotting fixture table 12a can hold the wafer We while maintaining the rotation angle of the release position P2 unchanged.

In addition, in the present embodiment, as described above, the groove forming device 1 is provided with a temporary placement table 16, which absorbs and holds the wafer We transferred by the transfer mechanism 15 after the groove forming process is performed by the laser light irradiation unit 12 and before the protective film of the electric path surface We1 of the wafer We is removed. The temporary placement table 16 includes a temporary placement wafer holding table 16a having a recess 161a. Here, the U-shaped hand 15a is inserted into the recess 161a to hold the wafer We by the temporary placement table 16, so the posture of the U-shaped hand 15a when the wafer We is held by the temporary placement table 16 is preset. Therefore, the wafer We is transported from the U-shaped hand 15a to the temporary placement table 16 in a fixed posture, so the temporary placement table 16 can hold the wafer We while maintaining the rotation angle of the release position P2 unchanged.

In addition, in the present embodiment, as described above, the groove forming device 1 has a conductive surface film cleaning unit 13, and the conductive surface film cleaning unit 13 is provided with a rotating table 13h, and performs the formation, removal and drying of a protective film on the conductive surface We1 of the wafer We. The conductive surface film cleaning unit 13 includes a resin coating nozzle 13a, and the resin coating nozzle 13a applies a water-soluble resin to the conductive surface We1 of the wafer We in order to form a protective film. The surface coating cleaning section 13 includes a cleaning nozzle 13c, which supplies cleaning water to remove the water-soluble resin applied by the resin coating nozzle 13a to the surface coating We1 of the wafer We. The surface coating cleaning section 13 includes a drying nozzle 13e, which blows warm air to dry the surface coating We1 of the wafer We. The resin coating nozzle 13a, the cleaning nozzle 13c and the drying nozzle 13e are respectively configured to be able to rotate independently of each other. Here, when the resin coating nozzle 13a, the cleaning nozzle 13c and the drying nozzle 13e rotate as a whole, for example, when the resin coating nozzle 13a is used to coat the water-soluble resin, since the cleaning nozzle 13c and the drying nozzle 13e also rotate together, it is conceivable that the water-soluble resin will adhere to the It is also conceivable that during the resin coating process and the drying process, residual liquid will drip from the cleaning nozzle 13c and adhere to other nozzles, or during the cleaning process and the drying process, residual liquid will drip from the resin coating nozzle 13a and adhere to other nozzles. In view of this, the resin coating nozzle 13a, the cleaning nozzle 13c and the drying nozzle 13e are respectively configured to be able to rotate independently of each other, thereby preventing the water-soluble resin coated from the resin coating nozzle 13a from being attached to the cleaning nozzle 13c and the drying nozzle 13e, and preventing the residual liquid of the cleaning nozzle 13c from being attached during the resin coating process and the drying process, and the residual liquid of the resin coating nozzle 13a from being attached during the cleaning process and the drying process, etc.

Furthermore, in the present embodiment, as described above, the notching device 1 includes the first rotating mechanism 13b, which rotates the resin coating nozzle 13a to either the coating position Pr1 for coating the water-soluble resin on the electrical surface We1 of the wafer We or the first retreat position Pr2 for retreating the resin coating nozzle 13a from the coating position Pr1. The notching device 1 includes the second rotating mechanism 13d, which rotates the cleaning nozzle 13c to either the supply position Pw1 for supplying cleaning water to the electrical surface We1 of the wafer We or the second retreat position Pw2 for retreating the cleaning nozzle 13c from the supply position Pw1. The groove opening device 1 has a third rotating mechanism 13f, which rotates the drying nozzle 13e to either the air supply position Pb1 for blowing warm air to the electric surface We1 of the wafer We, or the third retreat position Pb2 for retreating the drying nozzle 13e from the air supply position Pb1. In this way, it is easy to realize a structure in which the resin coating nozzle 13a, the cleaning nozzle 13c, and the drying nozzle 13e are independently rotated.

In the present embodiment, as described above, the semiconductor chip Ch is manufactured by the slotting device 1, and the slotting device 1 comprises: a laser light irradiation unit 12, which performs slotting processing, that is, irradiates the laser light Lg along the cutting road Ws between the semiconductor chip Ch of the electric surface We1 of the wafer We to form a slot that separates the insulating film; and a rotating table 13h, which holds the wafer We while forming a protective film to protect the electric surface We1 of the wafer We from being affected by the residue. The above-mentioned residue is generated when the groove processing is performed by the laser light irradiation unit 12; the rotation angle position detection unit 133h is used to detect the rotation angle position θr of the turntable 13h in the R direction of the wafer We held on the turntable 13h; and the control unit 18 is used to adjust the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position in the R direction of the wafer We. In this way, by adjusting the rotation angle position θr of the wafer We, the rough positioning of the same degree as the rough positioning of the rotation angle position θr of the wafer We can be performed in the laser light irradiation unit 12. The rough positioning of the rotation angle position θr of the wafer We is implemented based on the rotation angle position of the groove Nt or the reference surface set on the outer periphery of the wafer We. As a result, the position of the alignment mark Ar of the wafer We can be obtained based on the wafer We positioned at the adjusted rotation angle position θr without the need to detect the groove Nt or the reference surface, thereby providing a semiconductor chip Ch that can shorten the time required to adjust the rotation angle position θr of the wafer We.

Furthermore, in the present embodiment, as described above, the manufacturing method of the semiconductor chip Ch includes step S1, that is, adjusting the rotation angle position θr of the wafer We based on the detection result of the rotation angle position detection unit 133h and the target rotation angle position in the R direction of the wafer We. The above-mentioned rotation angle position detection unit 133h is used to detect the rotation angle position θr in the R direction of the turntable 13h of the wafer We held on the turntable 13h. The above-mentioned turntable 13h holds the wafer We and rotates it when forming a protective film to protect the electrical path We1 of the wafer We from being affected by the residue. The above-mentioned residue is generated when the grooving process is performed by the laser light irradiation unit 12. The method for manufacturing a semiconductor chip Ch includes step S5, i.e., irradiating a laser beam Ld along each of a plurality of scribe lines Ws of a wafer We provided with a plurality of semiconductor chips Ch. The method for manufacturing a semiconductor chip Ch includes step S6, i.e., using an expansion unit 606 to expand an expansion tape Te, thereby dividing the wafer We into a plurality of semiconductor chips Ch along each of the plurality of scribe lines Ws. In this way, by adjusting the rotational angle position θr of the wafer We, a coarse positioning of the same degree as the coarse positioning of the rotational angle position θr of the wafer We can be performed in the laser light irradiation unit 12, which is performed based on the rotational angle position of the groove Nt or the reference surface provided on the outer periphery of the wafer We. As a result, the position of the alignment mark Ar of the wafer We can be obtained based on the wafer We positioned at the adjusted rotation angle position θr without the need to detect the groove Nt or the reference surface, thereby providing a method for manufacturing a semiconductor chip Ch that can shorten the time required to adjust the rotation angle position θr of the wafer We.

[Example of changes]

Furthermore, the embodiments disclosed this time should be regarded as illustrative in all aspects and not restrictive. The scope of the present invention is indicated by the scope of the patent application, not by the description of the above embodiments, and includes all changes (variations) within the meaning and scope equivalent to the scope of the patent application.

For example, in the above-mentioned present embodiment, the following example is shown: the imaging unit 14 is configured to photograph the wafer We adsorbed on the rotating wafer holding table 131h from the Z1 direction side to measure the thickness of the protective film coated on the wafer We adsorbed on the rotating wafer holding table 131h; however, the present invention is not limited to this. In the present invention, as shown in the variation example of FIG. 27, the imaging unit 714 can also be configured to photograph the wafer We held on the rotating table 13h, thereby photographing the position reference portion (groove Nt or reference surface) set on the outer periphery of the wafer We to detect the rotation angle position θr of the wafer We held on the rotating table 13h.

In this case, the slotting device 701 is provided with a slotting fixture table 12a, which, when the slotting process is performed by the laser light irradiation unit 12, absorbs and holds the wafer We transported by the transport mechanism 15, and rotates or moves the wafer We in the horizontal direction. The control unit 718 is configured to perform the following control: after the wafer We is held by the slotting fixture table 12a, the rotation angle position θr of the wafer We is adjusted based on the preset target rotation angle position and the image of the wafer We, which is obtained by the camera unit 714 and includes the position reference portion when the rotation of the rotating table 13h is completed. In this way, by adjusting the rotation angle position of the wafer We based on the image of the wafer We, after the wafer We is held by the slotting fixture table 12a, the rotation angle position of the wafer We can be adjusted based on the actual rotation angle position θr of the wafer We, so that the wafer We can be accurately adjusted to the preset target rotation angle position and the wafer We can be held on the slotting fixture table 12a.

In addition, the slotting device 701 has a cassette section 11 (wafer storage section) for storing the wafer We. The slotting device 1 has a transport mechanism 15, which includes a U-shaped hand 15a for adsorbing and holding the back side of the wafer We on the opposite side to the electric surface We1, and is configured to transport the wafer We held by the U-shaped hand 15a. The rotation angle position detection section includes a camera 714, and the camera 714 photographs the wafer We held on the rotating table 13h in order to detect the rotation angle position θr of the wafer We held on the rotating table 13h, thereby photographing the groove Nt (position reference section) provided on the outer periphery of the wafer We. The control unit 718 is configured to perform the following control: based on the preset target rotation angle position and the image of the wafer We, the posture of the U-shaped hand 15a when the U-shaped hand 15a receives the wafer We into the cassette unit 11 (wafer receiving unit) is adjusted, thereby adjusting the rotation angle position of the wafer We. The above image is obtained by the camera unit 714, including the groove Nt (position reference unit) when the rotation of the rotating table 13h is completed. In this way, by adjusting the rotation angle position of the wafer We using the U-shaped hand 15a based on the image of the wafer We, the rotation angle position of the wafer We can be adjusted based on the actual rotation angle position of the wafer We, so that the wafer We can be accurately adjusted to the preset target rotation angle position and received in the cassette unit 11 (wafer receiving unit).

Referring to FIG. 28 to FIG. 30, the conveyance of the wafer We from the cassette section 11 to the slotting fixture table 12a is described. Here, as shown in FIG. 28, the origin of the rotation angle position θh of the U-shaped hand 15a indicates the posture that the straight line portion of the U-shaped hand 15a extends parallel to the X direction. In addition, the origin of the rotation angle position θs of the rotating table 13h indicates the state that the concave portion 1311h of the rotating wafer holding table 131h extends parallel to the X direction. In addition, the origin of the rotation angle position θg of the slotting fixture table 12a indicates the state that the concave portion 1211a of the slotting wafer holding table 121a extends parallel to the X direction. In addition, the target rotation angle position of the wafer We has been pre-stored in the memory section of the control section 18.

As shown in FIG. 28, the control unit 718 is configured to perform the following control: when the rotation angle position θh of the U-shaped hand 15a is aligned with the origin, the wafer We is taken out from the cassette part 11 by the U-shaped hand 15a. As shown in FIG. 29, the control unit 718 is configured to perform the following control: after taking out the wafer We from the cassette part 11, the wafer We is transferred to the rotating table 13h whose rotation angle position θs is aligned with the origin. The control unit 718 is configured to perform the following control: after the U-shaped hand 15a is extracted from the concave portion 1311h of the self-rotating wafer holding table 131h, the wafer We is held by the rotating table 13h by suction.

The control unit 718 is configured to perform the following control: after rotating the turntable 13h holding the wafer We, a protective film is applied to the electric surface We1 of the wafer We and dried, and then the rotation angle position θs is aligned with the origin and stopped. The control unit 718 is configured to perform the following control: based on the rotation angle position θs of the turntable 13h being aligned with the origin and stopped, the wafer We held on the turntable 13h is photographed by the camera unit 714. The control unit 718 is configured to perform the following control: based on the photographic image of the wafer We photographed by the camera unit 714, the rotation angle position θr of the wafer We is obtained. The control unit 718 is configured to perform the following control: based on the difference between the rotation angle position θr of the acquired wafer We and the pre-stored (set) target rotation angle position, the difference is calculated.

As shown in FIG. 29 , the control unit 718 is configured to perform the following control: after inserting the U-shaped hand 15a of the rotating table 13h whose rotation angle position is aligned with the origin into the concave portion 1311h of the rotating table 13h whose rotation angle position is aligned with the origin and adsorbing and holding the wafer We, the wafer We is transferred to the slotting fixture table 12a whose rotation angle position is aligned with the origin.

As shown in FIG. 30 , the control unit 718 is configured to perform the following control: after the U-shaped hand 15a is pulled out from the recess 1211a of the wafer holding table 121a for grooving, the wafer We is held by the fixture table 12a for grooving. In addition, the control unit 718 is configured to control the rotation angle position θg of the fixture table 12a for grooving to rotate by a differential amount from the origin. The control unit 718 is configured to align the fixture table 12a for grooving in the horizontal direction and the R direction (circumferential direction) after the rotation angle position θg of the fixture table 12a for grooving is rotated by a differential amount from the origin. The control unit 718 is configured to perform grooving processing by the laser light irradiation unit 12 after alignment.

In this way, if the rotation angle position θr is adjusted in the rotating table 13h, the hand 15a cannot be inserted into the recess 1311h. Therefore, the rotation angle position θr is not adjusted in the rotating table 13h, and the wafer We is directly placed on the slotting wafer holding table 121a by the U-shaped hand 15a. The control unit 718 is configured to perform the following control: after the wafer We is placed on the slotting wafer holding table 121a by the hand 15a, the slotting wafer holding table 121a of the slotting fixture table 12a is rotated based on the difference, and the rotation angle position θr of the wafer We is adjusted in a manner consistent with the preset target rotation angle position.

Furthermore, the example shown in the above variation is that the control unit 718 is configured to perform the following control: the slotting wafer holding table 121a of the slotting fixture table 12a is rotated, and the rotation angle position θr of the wafer We is adjusted in a manner consistent with the target rotation angle position; however, the present invention is not limited to this. In the present invention, the control unit can also be configured to perform the following control: the slotting wafer holding table is rotated, and the rotation angle position of the wafer is adjusted to a position offset by a predetermined angle from a preset target rotation angle position.

In addition, referring to FIG. 28 to FIG. 30, the transfer of the wafer We from the slotting fixture table 12a to the cassette part 11 is described. Furthermore, compared with the transfer of the wafer We from the cassette part 11 to the slotting fixture table 12a, the top view of the two is the same, so the description is made with reference to the common FIG. 28 to FIG. 30.

As shown in FIG. 29 and FIG. 30, the control unit 718 is configured to perform the following control: after inserting the U-shaped hand 15a aligned with the rotation angle position θh into the recess 1211a of the slotting fixture table 12a aligned with the rotation angle position θg to adsorb and hold the wafer We, the wafer We is transferred to the rotating table 13h aligned with the rotation angle position θs. The control unit 718 is configured to perform the following control: after extracting the U-shaped hand 15a from the recess 1311h of the self-rotating wafer holding table 131h, the wafer We is adsorbed and held by the rotating table 13h.

The control unit 718 is configured to perform the following control: after the rotation table 13h holding the wafer We is rotated, the protective film on the surface We1 of the wafer We is cleaned and dried, and the rotation angle position θs is aligned with the origin and stopped. The control unit 718 is configured to perform the following control: based on the rotation angle position θs of the rotation table 13h being aligned with the origin and stopped, the wafer We held on the rotation table 13h is photographed by the camera unit 714. The control unit 718 is configured to perform the following control: based on the photographic image of the wafer We photographed by the camera unit 714, the rotation angle position θr of the wafer We is obtained. The control unit 718 is configured to perform the following control: based on the difference between the rotation angle position θr of the acquired wafer We and the pre-stored (set) target rotation angle position, the difference is calculated.

As shown in FIG. 28 and FIG. 29, the control unit 718 is configured to perform the following control: after inserting the U-shaped hand 15a whose rotation angle position θh is aligned with the origin into the concave portion 1311h of the rotating table 13h whose rotation angle position θs is aligned with the origin and adsorbing and holding the wafer We, the U-shaped hand 15a is extracted from the concave portion 1311h of the rotating table 13h. The control unit 718 is configured to perform the following control: after extracting the U-shaped hand 15a, the rotation angle position θh of the U-shaped hand 15a is rotated from the origin by the differential amount. The control unit 718 is configured to perform the following control: after rotating the rotation angle position θh of the U-shaped hand 15a from the origin by the differential amount, the wafer We is accommodated in the cassette portion 11.

In this way, if the rotation angle position θr is adjusted in the rotating table 13h, the hand 15a cannot be inserted into the recess 1311h, so the rotation angle position θr does not need to be adjusted in the rotating table 13h, and the wafer We is directly accommodated in the cassette part 11 by the U-shaped hand 15a. In addition, the control unit 718 is configured to perform the following control: when the cleaned and dried wafer We is returned to the cassette part 11, the U-shaped hand 15a is rotated based on the difference, and the rotation angle position θr of the wafer We is aligned in a manner consistent with the preset target rotation angle position, so as to adjust the rotation angle position θr of the wafer We.

Furthermore, the example shown in the above variation is that the control unit 718 is configured to perform the following control: the U-shaped hand 15a is rotated, and the rotation angle position θr of the wafer We is adjusted in a manner consistent with the preset target rotation angle position; however, the present invention is not limited to this. In the present invention, the control unit can also be configured to perform the following control: the U-shaped hand is rotated, and the rotation angle position of the wafer is adjusted to a position offset by a predetermined angle from the preset target rotation angle position.

In addition, the example shown in the above embodiment is that the control unit 18 is configured to perform the following control: based on the detection result of the rotation angle position detection unit 133h and the initial position P1, the release position P2 of the wafer We is adjusted to align with the initial position P1; however, the present invention is not limited to this. In the present invention, the control unit can also be configured to perform the following control: based on the detection result of the rotation angle position detection unit and the initial position, the release position is adjusted to align with the position offset by a specified angle from the initial position.

In addition, in the above-mentioned embodiment, an example is shown in which the transport mechanism 15 has a U-shaped hand 15a, but the present invention is not limited to this. In the present invention, the transport mechanism may also have a rod-shaped hand. In this case, the recess of the wafer holding table for grooving, the recess of the wafer holding table for rotation, and the recess of the wafer holding table for temporary placement should be formed according to the shape of the hand.

Furthermore, in the above-mentioned embodiment, the U-shaped hand 15a is configured to absorb and hold the back side of the wafer We on the opposite side of the electrical path We1, but the present invention is not limited to this. In the present invention, the U-shaped hand can also absorb and hold the electrical path of the wafer.

In addition, in the above-mentioned embodiment, for the convenience of explanation, an example of using a process-driven flowchart that performs processing in sequence according to the processing flow is shown to illustrate the control processing of the control unit 18, but the present invention is not limited to this. In the present invention, the control processing of the control unit can also be performed by event-driven (event-driven) processing that performs processing in units of events. In this case, a complete event-driven type can be used, or a combination of event-driven and process-driven can be used.

13: Electrical surface coating cleaning section

13a: Resin coating nozzle

13b: 1st rotating mechanism

13c: Clean the nozzle

13d: Second rotating mechanism

13e: Dry spray

13f: The third rotating mechanism

13g: Scattering suppression shield

15:Transportation mechanism

15a: Hands

Cs: rotation center axis

Nt: Groove

P2: Release position

R: Direction

R1: Direction

R2: Direction

We: Wafer

X: Direction

X1: Direction

X2: Direction

Y: direction

Y1: Direction

Y2: Direction

Z: Direction

Z1: Direction

Z2: Direction

Claims (16)

A slotting device comprises: a laser irradiation unit for performing slotting processing, i.e., irradiating laser light along the cutting path between semiconductor chips on the electrical path of the wafer to form a slot that separates the insulating film; a rotating table for holding the wafer and rotating it while forming a protective film to protect the electrical path of the wafer from being affected by residues, the residues being generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the rotating table in the rotation direction of the wafer held on the rotating table; and a control unit for performing control based on the rotation angle position. The control unit is configured to adjust the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction; and the control unit is configured to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, the initial position being the target rotation angle position of the wafer in the rotation direction when the wafer is held by the rotating table, and the release position being the rotation angle position of the wafer in the rotation direction when the rotating table releases the wafer from holding the wafer. The slotting device of claim 1 is configured to transport the wafer positioned at the release position based on the detection result of the rotation angle position detection unit and the initial position from the rotating table to the laser light irradiation unit while maintaining the rotation angle unchanged. The slotting device of claim 1 is further provided with a wafer storage section for storing the wafer, and is configured to transport the wafer positioned at the release position based on the detection result of the rotation angle position detection section and the initial position from the rotary table to the wafer storage section while maintaining the rotation angle unchanged. As in claim 1, the grooving device, wherein the control unit is configured to perform the following control: based on the detection result of the rotation angle position detection unit and the initial position, the release position is adjusted in such a way as to align with the initial position. As in claim 1, the grooving device, wherein the rotation angle position detection unit includes an encoder for detecting the rotation angle of the rotating table, and the control unit is configured to adjust the release position based on the rotation angle and the initial position of the rotating table detected by the encoder. As in claim 5, the groove forming device, wherein the rotary table is configured to hold the wafer and rotate it while removing the protective film and drying the electrical path surface after the groove forming process is performed by the laser light irradiation unit; and the control unit is configured to control the rotation speed of the rotary table for each of the formation of the protective film, the removal of the protective film, and the drying of the electrical path surface after the removal of the protective film based on the rotation angle of the rotary table detected by the encoder. As in claim 1, the control unit is configured to perform the following control: after the operation including the formation of the protective film by rotating the wafer held by the rotating table is completed, the rotating table is rotated from the rotation angle position at the completion of the operation to the release position. The slotting device of claim 1 further comprises a slotting fixture table, which, when the slotting process is performed by the laser light irradiation unit, absorbs the wafer to hold it and rotates or moves the wafer in the horizontal direction; and the rotation angle position detection unit includes a camera unit, which photographs the wafer held on the rotating table in order to detect the rotation angle position of the wafer held on the rotating table. The wafer on the rotating table is photographed by the position reference part set on the periphery of the wafer; the control part is configured to perform the following control: based on the preset target rotation angle position and the image of the wafer, after the wafer is held by the slotting fixture table, the rotation angle position is adjusted, and the image is obtained by the photography part, including the position reference part when the rotation of the rotating table is completed. A slotting device comprises: a laser irradiation unit for performing slotting processing, i.e., irradiating laser light along the cutting path between semiconductor chips on the electrical path of the wafer to form a slot that separates an insulating film; a rotating table for holding the wafer and rotating it while forming a protective film to protect the electrical path of the wafer from being affected by residues, the residues being generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the wafer held on the rotating table in the rotation direction of the rotating table; a control unit for adjusting the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction; and a wafer receiving unit for receiving the wafer. Wafer; and a transport mechanism, which includes a hand that absorbs the wafer to hold it, and is configured to transport the wafer held by the hand; and the rotation angle position detection unit includes a camera unit, and the camera unit photographs the wafer held on the turntable in order to detect the rotation angle position of the wafer held on the turntable, thereby photographing a position reference unit set on the periphery of the wafer; the control unit is configured to perform the following control: based on the preset target rotation angle position and the image of the wafer, the posture of the hand when the hand receives the wafer into the wafer receiving unit is adjusted, thereby adjusting the rotation angle position of the wafer, and the image is obtained by the camera unit, including the position reference unit when the rotation of the turntable is completed. A slotting device comprises: a laser irradiation unit for performing slotting processing, i.e., irradiating laser light along the cutting path between semiconductor chips on the electrical path of the wafer to form a slot that separates the insulating film; a rotating table for holding the wafer and rotating it while forming a protective film to protect the electrical path of the wafer from being affected by residues, the residues being generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the rotating table in the rotation direction of the wafer held on the rotating table; a control unit for controlling the rotation angle of the rotating table; A part, which controls the rotation angle position of the wafer based on the detection result of the rotation angle position detection part and the target rotation angle position of the wafer in the rotation direction; and a transport mechanism, the transport mechanism includes a hand that absorbs and holds the wafer, and is configured to transport the wafer held by the hand; and the rotating table includes a rotating wafer holding table, the rotating wafer holding table is configured to absorb and hold the wafer transported by the transport mechanism, and is formed with a first recess for inserting the hand. The slotting device of claim 10 is further provided with a slotting fixture table, which, when the slotting process is performed by the laser light irradiation unit, absorbs and holds the wafer transported by the transport mechanism, and rotates or moves the wafer in the horizontal direction; and the slotting fixture table includes a slotting wafer holding table having a second recess. The slotting device of claim 10 further comprises a temporary placement table, which absorbs and holds the wafer transported by the transport mechanism after the slotting process is performed by the laser light irradiation unit and before the protective film on the electrical path of the wafer is removed; and the temporary placement table includes a temporary placement wafer holding table having a third recess. A slotting device, comprising: a laser irradiation unit, which performs slotting processing, that is, irradiates laser light along the cutting path between semiconductor chips on the electrical path of the wafer to form a slot that separates the insulating film; a rotating table, which holds the wafer and rotates it when forming a protective film to protect the electrical path of the wafer from being affected by residues, the residues being generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit, which is used to detect the rotation angle position of the rotating table in the rotation direction of the wafer held on the rotating table; and a control unit, which adjusts the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction. The above-mentioned rotation angle position is controlled; and the above-mentioned surface protection and cleaning section is provided with the above-mentioned rotating table, and the above-mentioned surface protection and cleaning section forms the above-mentioned protective film on the above-mentioned surface of the wafer, removes the above-mentioned protective film and dries it; and the above-mentioned surface protection and cleaning section includes: a resin coating nozzle, which, in order to form the above-mentioned protective film, sprays the above-mentioned surface of the wafer The surface of the electric circuit is coated with a water-soluble resin; a cleaning nozzle supplies cleaning water to the surface of the electric circuit of the wafer to remove the water-soluble resin coated by the resin coating nozzle; and a drying nozzle blows warm air to dry the surface of the electric circuit of the wafer; the resin coating nozzle, the cleaning nozzle and the drying nozzle are respectively configured to be able to rotate independently of each other. The slotting device of claim 13 further comprises: a first rotating mechanism for rotating the resin coating nozzle to either a coating position for coating the water-soluble resin on the electrical path surface of the wafer or a first retreat position for retreating the resin coating nozzle from the coating position; and a second rotating mechanism for rotating the cleaning nozzle to a position for coating the water-soluble resin on the electrical path surface of the wafer. The third rotating mechanism rotates the drying nozzle to one of a supply position for supplying cleaning water to the above-mentioned electrical surface of the above-mentioned wafer, and a second retreat position for retreating the above-mentioned cleaning nozzle from the above-mentioned supply position; and a third rotating mechanism, which rotates the above-mentioned drying nozzle to one of a supply position for blowing warm air to the above-mentioned electrical surface of the above-mentioned wafer, and a third retreat position for retreating the above-mentioned drying nozzle from the above-mentioned supply position. A semiconductor chip is manufactured by a slotting device, wherein the slotting device comprises: a laser irradiation unit for performing slotting processing, i.e., irradiating laser light along the cutting path between the semiconductor chips on the electrical path of the wafer to form a slot that separates the insulating film; a rotating table for holding the wafer and rotating it while forming a protective film to protect the electrical path of the wafer from being affected by residues, wherein the residues are generated when the slotting processing is performed by the laser irradiation unit; a rotation angle position detection unit for detecting the rotation angle position of the rotating table in the rotation direction of the wafer held on the rotating table; and a control unit. , which performs control to adjust the rotation angle position of the wafer based on the detection result of the rotation angle position detection unit and the target rotation angle position of the wafer in the rotation direction; and the control unit is configured to perform control to adjust the release position based on the detection result of the rotation angle position detection unit and the initial position, the initial position is the target rotation angle position of the wafer in the rotation direction when the wafer is held by the rotating table, and the release position is the rotation angle position of the wafer in the rotation direction when the rotating table releases the wafer from holding the wafer. A method for manufacturing a semiconductor chip comprises the following steps: adjusting the rotation angle position of the wafer based on the detection result of a rotation angle position detection unit and the target rotation angle position in the rotation direction of the wafer, the rotation angle position detection unit is used to detect the rotation angle position of the wafer held on the rotation table in the rotation direction, the rotation table holds the wafer and rotates it when forming a protective film to protect the electrical path surface of the wafer from being affected by residues, the residues being generated when a groove is opened by a laser irradiation unit; and rotating the wafer along a plurality of semiconductor chips provided with the plurality of semiconductor chips. Each of the plurality of cutting paths of the wafer is irradiated with laser light; the wafer is divided into the plurality of semiconductor chips along each of the plurality of cutting paths by expanding the thin-film component using the expansion unit; and the release position is controlled based on the detection result of the rotation angle position detection unit and the initial position, wherein the initial position is the target rotation angle position of the wafer in the rotation direction when the wafer is held by the rotating table, and the release position is the rotation angle position of the wafer in the rotation direction when the rotating table releases the wafer from holding the wafer.