TWI889022B - Conductive film forming method - Google Patents
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Abstract
本發明提供一種用以低成本地形成電磁屏蔽效果高之導電膜的導電性組成物及導電膜形成方法。導電性組成物在燒製後顯現導電性。導電性組成物含有銅奈米粒子、液體分散媒、分散劑及熱硬化性有機基質。分散劑係使銅奈米粒子分散在分散媒中者。分散劑係包含氮原子或磷原子之高分子化合物。有機基質係由液狀環氧樹脂及使該環氧樹脂硬化之硬化劑構成。該硬化劑係鹼性含氮化合物。在該導電膜形成方法中進行在甲酸環境下之燒製或燒製前在甲酸水溶液中之浸漬。 The present invention provides a conductive composition and a conductive film forming method for forming a conductive film with high electromagnetic shielding effect at low cost. The conductive composition exhibits conductivity after firing. The conductive composition contains copper nanoparticles, a liquid dispersion medium, a dispersant, and a thermosetting organic matrix. The dispersant is a polymer compound containing nitrogen atoms or phosphorus atoms. The organic matrix is composed of a liquid epoxy resin and a hardener for hardening the epoxy resin. The hardener is an alkaline nitrogen-containing compound. In the conductive film forming method, firing is performed in a formic acid environment or immersion in a formic acid aqueous solution before firing.
Description
本發明係關於用以形成適用於電子器件之電磁屏蔽之導電膜的導電性組成物及使用該導電性組成物之導電膜形成方法。 The present invention relates to a conductive composition for forming a conductive film suitable for electromagnetic shielding of electronic devices and a conductive film forming method using the conductive composition.
隨著近年來電子器件之輕薄短小化,電子零件之安裝密度變高。電子器件會放射成為誤動作原因的無用輻射雜訊,所以隨著電子零件之高安裝密度化,在其他電子器件或電子器件內會產生因無用輻射雜訊(電磁干擾)所致之誤動作。為了防止如此之誤動作,使用電磁屏蔽(電磁波屏蔽、EMI屏蔽)來遮蔽無用輻射雜訊。 As electronic devices have become thinner and smaller in recent years, the mounting density of electronic parts has increased. Electronic devices emit unwanted radiation noise that can cause malfunctions, so as the mounting density of electronic parts increases, malfunctions caused by unwanted radiation noise (electromagnetic interference) may occur in other electronic devices or in electronic devices. In order to prevent such malfunctions, electromagnetic shielding (electromagnetic wave shielding, EMI shielding) is used to shield the unwanted radiation noise.
以往有金屬罐作為電磁屏蔽。金屬罐係配置成包覆作為無用輻射雜訊產生源之立體物。但是,使用金屬罐與電子器件之輕量化背道而馳。此外,金屬罐存在會使無用輻射雜訊漏出之間隙。另外,因為需要將無用輻射雜訊產生源集中在用金屬罐包覆的地方,所以電子器件之設計自由度降低。 In the past, metal cans were used as electromagnetic shields. Metal cans are configured to cover three-dimensional objects that are the source of unwanted radiation noise. However, the use of metal cans is contrary to the lightweighting of electronic devices. In addition, metal cans have gaps that allow unwanted radiation noise to leak out. In addition, because the source of unwanted radiation noise needs to be concentrated in the area covered by the metal can, the design freedom of electronic devices is reduced.
此外,將包含導電性粒子之導電性EMI遮蔽組成物塗布在無用輻射雜訊產生源上作為電磁屏蔽的方法是已知的(參照專利文獻1)。其中記載該導電性EMI遮蔽組成物可就導電性微粒子係銀粒子(同文獻之實施例1至9)或銀被覆銅粒子(同 文獻之實施例10)之組成來實施。銀因為電阻率低所以適用於電磁屏蔽,但成本高。 In addition, a method of applying a conductive EMI shielding composition containing conductive particles on a source of unwanted radiation noise as an electromagnetic shield is known (see patent document 1). It is described that the conductive EMI shielding composition can be implemented with the conductive microparticles being silver particles (Examples 1 to 9 of the same document) or silver-coated copper particles (Example 10 of the same document). Silver is suitable for electromagnetic shielding because of its low resistivity, but it is expensive.
[先前技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特表2017-520903號公報 [Patent Document 1] Japanese Patent Publication No. 2017-520903
本發明解決上述問題且目的係提供用以低成本地形成電磁屏蔽效果高之導電膜的導電性組成物及導電膜形成方法。 The present invention solves the above-mentioned problems and aims to provide a conductive composition and a conductive film forming method for forming a conductive film with high electromagnetic shielding effect at low cost.
本發明之導電性組成物係在燒製後顯現導電性者,其特徵為:含有銅奈米粒子、液體分散媒、使前述銅奈米粒子分散在前述分散媒中之分散劑及熱硬化性有機基質,前述分散劑係包含氮原子或磷原子之高分子化合物,前述有機基質係由液狀環氧樹脂及使該環氧樹脂硬化之硬化劑構成,前述硬化劑係鹼性含氮化合物。 The conductive composition of the present invention is conductive after firing, and is characterized by: containing copper nanoparticles, liquid dispersion medium, a dispersant for dispersing the copper nanoparticles in the dispersion medium, and a thermosetting organic matrix, wherein the dispersant is a polymer compound containing nitrogen atoms or phosphorus atoms, and the organic matrix is composed of a liquid epoxy resin and a hardener for hardening the epoxy resin, and the hardener is an alkaline nitrogen-containing compound.
在該導電性組成物中,例如,前述分散劑係具有胺之分支聚酯或磷酸聚酯。 In the conductive composition, for example, the dispersant is a branched polyester or a phosphate polyester having an amine.
在該導電性組成物中,前述硬化劑宜係胺。 In the conductive composition, the aforementioned hardener is preferably an amine.
在該導電性組成物中,例如,前述硬化劑係選自於由咪唑衍生物、改性胺及苯酚類芳香族胺構成之群組。 In the conductive composition, for example, the curing agent is selected from the group consisting of imidazole derivatives, modified amines and phenolic aromatic amines.
本發明之導電膜形成方法係在目標物之表面上形成導電膜的方法,其特徵為具有下列步驟:在前述目標物之表面上形成由前述導電性組成物構成之液膜;乾燥前述液膜以形成粒子膜;及將前述粒子膜在甲酸環境下進行燒製以形成導電膜並且使前述環氧樹脂硬化。 The conductive film forming method of the present invention is a method for forming a conductive film on the surface of a target object, which is characterized by having the following steps: forming a liquid film composed of the conductive composition on the surface of the target object; drying the liquid film to form a particle film; and sintering the particle film in a formic acid environment to form a conductive film and harden the epoxy resin.
本發明之導電膜形成方法係在目標物之表面上形成導電膜的方法,其特徵為依序具有下列步驟:在前述目標物之表面上形成由前述導電性組成物構成之液膜;乾燥前述液膜以形成粒子膜;將形成有前述粒子膜之前述目標物浸漬在甲酸水溶液中;由前述甲酸水溶液取出形成有前述粒子膜之前述目標物並去除該粒子膜上之液體;及將前述粒子膜在鈍性環境下進行燒製以形成導電膜並且使前述環氧樹脂硬化。 The conductive film forming method of the present invention is a method for forming a conductive film on the surface of a target object, which is characterized by having the following steps in sequence: forming a liquid film composed of the conductive composition on the surface of the target object; drying the liquid film to form a particle film; immersing the target object formed with the particle film in a formic acid aqueous solution; taking out the target object formed with the particle film from the formic acid aqueous solution and removing the liquid on the particle film; and firing the particle film in a passive environment to form a conductive film and harden the epoxy resin.
本發明之導電性組成物因為使用銅奈米粒子作為導電性粒子,所以成本比使用銀粒子低。因為銅具有優異導電性,所以藉由使用該導電性組成物可形成電阻率低之導電膜。該導電膜因為由銅奈米粒子形成,所以即使在低溫下燒製亦充分地進行且電阻率低。此外,藉由利用甲酸進行燒製,銅奈米粒子之表面氧化皮膜被甲酸還原且形成之導電膜的電阻率低。另外,利用甲酸來促進分散劑的分解反應且形成之導電膜的電阻率更低。導電膜之表層部因甲酸而使環氧樹脂之影響小且電阻率更低。因為導電膜之表層部的電阻率低,所以即使導電膜薄,電磁屏蔽效果亦因於與空氣之界面的電磁波反射而為高。導電膜與目標物的界面因 為遠離導電膜之表面,所以不易與甲酸反應,可進行環氧樹脂之硬化並提高導電膜之密接性。 The conductive composition of the present invention uses copper nanoparticles as conductive particles, so the cost is lower than that of silver particles. Since copper has excellent conductivity, a conductive film with low resistivity can be formed by using the conductive composition. Since the conductive film is formed by copper nanoparticles, sintering is sufficient even at low temperatures and the resistivity is low. In addition, by using formic acid for sintering, the surface oxide film of the copper nanoparticles is reduced by formic acid and the resistivity of the conductive film formed is low. In addition, formic acid is used to promote the decomposition reaction of the dispersant and the resistivity of the conductive film formed is even lower. The surface of the conductive film is less affected by the epoxy resin due to formic acid and the resistivity is even lower. Since the resistivity of the surface of the conductive film is low, even if the conductive film is thin, the electromagnetic shielding effect is high due to the reflection of electromagnetic waves at the interface with the air. Since the interface between the conductive film and the target is far away from the surface of the conductive film, it is not easy to react with formic acid, which can cure the epoxy resin and improve the adhesion of the conductive film.
1:導電膜 1: Conductive film
2:目標物 2: Target object
3:作業面 3: Working surface
4:液膜 4: Liquid film
5:粒子膜 5: Particle film
6:甲酸水溶液 6: Formic acid aqueous solution
21:頂面 21: Top
22:側面 22:Side
23:底面 23: Bottom
30:作業用板 30:Work board
圖1(a)至(d)係按時間順序顯示使用本發明第一實施形態之導電性組成物的導電膜形成方法的斷面結構圖。 Figures 1(a) to (d) are cross-sectional structural diagrams showing the conductive film forming method using the conductive composition of the first embodiment of the present invention in chronological order.
圖2(a)至(f)係按時間順序顯示使用本發明第二實施形態之導電性組成物的導電膜形成方法的斷面結構圖。 Figures 2(a) to (f) are cross-sectional structural diagrams showing the conductive film forming method using the conductive composition of the second embodiment of the present invention in chronological order.
(第一實施形態) (First implementation form)
以下說明本發明第一實施形態之導電性組成物。本發明之導電性組成物用於燒製且在燒製後顯現導電性。該燒製係在燒製中或燒製前使用甲酸。在第一實施形態中,在燒製中利用甲酸(在甲酸環境下之燒製)。 The following describes the conductive composition of the first embodiment of the present invention. The conductive composition of the present invention is used for firing and exhibits conductivity after firing. The firing uses formic acid during or before firing. In the first embodiment, formic acid is used during firing (firing in a formic acid environment).
該導電性組成物含有銅奈米粒子、液體分散媒、分散劑及熱硬化性有機基質。分散劑使銅奈米粒子分散在分散媒中。 The conductive composition contains copper nanoparticles, a liquid dispersion medium, a dispersant, and a thermosetting organic matrix. The dispersant disperses the copper nanoparticles in the dispersion medium.
分散媒係溶劑。溶劑係會溶解其他物質者,在常溫係液體且可使其蒸發。 Dispersing medium solvent. Solvent is something that dissolves other substances, is liquid at room temperature and can evaporate.
分散劑係包含氮原子或磷原子之高分子化合物。氮原子及磷原子在周期表中係第15族元素(氮族元素),負電性與碳原子不同且在有機分子骨架中反應性高。 Dispersants are polymer compounds containing nitrogen atoms or phosphorus atoms. Nitrogen atoms and phosphorus atoms are group 15 elements (nitrogen group elements) in the periodic table. They have negative charges different from carbon atoms and are highly reactive in organic molecular frameworks.
有機基質係由液狀環氧樹脂及硬化劑構成。環氧樹脂係熱硬化性樹脂。硬化劑使該環氧樹脂硬化。該硬化劑係鹼性含氮化合物。鹼性含氮化合物係包含氮原子之鹼性化合物。導電性組成物中之硬化劑濃度可按照環氧樹脂之種類及濃度以及硬化劑之種類來設定。在本實施形態中,硬化劑係胺。硬化劑係胺時,在環氧樹脂之硬化中,硬化劑之一級胺的活性氫與環氧基反應而生成二級胺,該二級胺與環氧基反應而硬化,生成之三級胺使環氧基聚合。硬化劑對環氧樹脂之摻合量在環氧基與活性氫係等莫耳時最適當。 The organic matrix is composed of a liquid epoxy resin and a hardener. The epoxy resin is a thermosetting resin. The hardener hardens the epoxy resin. The hardener is an alkaline nitrogen-containing compound. The alkaline nitrogen-containing compound is an alkaline compound containing nitrogen atoms. The concentration of the hardener in the conductive composition can be set according to the type and concentration of the epoxy resin and the type of the hardener. In the present embodiment, the hardener is an amine. When the hardener is an amine, during the curing of the epoxy resin, the active hydrogen of the primary amine of the hardener reacts with the epoxy group to generate a secondary amine, the secondary amine reacts with the epoxy group to cure, and the generated tertiary amine polymerizes the epoxy group. The best amount of hardener mixed with epoxy resin is when the molar ratio of epoxy group and active hydrogen is equimolar.
以下進一步詳述該導電性組成物。銅奈米粒子係粒徑奈米級,即中位直徑1nm以上且小於1000nm之銅微粒子。 The conductive composition is described in further detail below. Copper nanoparticles are nanometer-sized, that is, copper microparticles with a median diameter of more than 1nm and less than 1000nm.
分散媒因為未殘存在燒製導電性組成物而形成之導電膜中,所以不影響導電膜之性質。因此,分散媒只要可將銅奈米粒子分散在其中且可溶解有機基質即可,不限於特定溶劑。在本實施形態中,分散媒係例如環己酮。環己酮係極性非質子性溶劑。分散媒可為環己酮以外之極性非質子性溶劑、極性質子性溶劑、無極性溶劑。極性非質子性溶劑係例如乙酸丁酯、N,N-二甲基甲醯胺、丙酮、丙二醇一甲基醚乙酸酯、丙二醇一甲基醚、四氫呋喃、α-萜品醇、N-甲基-2-吡咯啶酮。極性質子性溶劑係例如異丙醇、乙醇。無極性溶劑係例如環己烷、二乙基醚、1,4-二烷、甲苯、庚烷、正十四烷。此外,分散媒可為多種溶劑之混合物。 Since the dispersing medium does not remain in the conductive film formed by firing the conductive composition, it does not affect the properties of the conductive film. Therefore, the dispersing medium is not limited to a specific solvent as long as it can disperse the copper nanoparticles therein and dissolve the organic matrix. In the present embodiment, the dispersing medium is, for example, cyclohexanone. Cyclohexanone is a polar aprotic solvent. The dispersing medium can be a polar aprotic solvent other than cyclohexanone, a polar protic solvent, or a non-polar solvent. Polar aprotic solvents are, for example, butyl acetate, N,N-dimethylformamide, acetone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, tetrahydrofuran, α-terpineol, and N-methyl-2-pyrrolidone. Polar protic solvents include isopropanol and ethanol. Nonpolar solvents include cyclohexane, diethyl ether, 1,4-dihydroquinone, In addition, the dispersion medium may be a mixture of various solvents.
在本實施形態中,分散劑係具有胺之分支聚酯或磷酸聚酯。胺具有氮原子。分支聚酯係在分子中具有分支構造之聚酯。磷酸聚酯具有磷原子(氮族元素)。 In this embodiment, the dispersant is a branched polyester or a phosphate polyester having an amine. The amine has a nitrogen atom. The branched polyester is a polyester having a branched structure in the molecule. The phosphate polyester has a phosphorus atom (nitrogen group element).
在本實施形態中,硬化劑係咪唑衍生物或苯酚類芳香族胺。咪唑衍生物及苯酚類芳香族胺係胺,即鹼性含氮化合物。 In this embodiment, the hardener is an imidazole derivative or a phenolic aromatic amine. Imidazole derivatives and phenolic aromatic amines are amines, i.e., alkaline nitrogen-containing compounds.
以下參照圖1(a)至(d)說明使用該導電性組成物之導電膜形成方法。該導電膜形成方法係在目標物之表面上形成導電膜的方法。目標物在本實施形態中係電子器件。電子器件之表面係例如塑模樹脂。 The following describes a method for forming a conductive film using the conductive composition with reference to FIGS. 1(a) to (d). The conductive film forming method is a method for forming a conductive film on the surface of a target object. The target object is an electronic device in this embodiment. The surface of the electronic device is, for example, a molding resin.
首先,如圖1(a)所示地將目標物2放置在作業面3上。目標物2在電子器件之情形中一般係立體物。在本實施形態中,目標物2具有大致長方體之外形且具有頂面21、複數側面22及底面23。頂面21係水平面且各側面22係大致鉛直面。因為電子器件安裝在印刷基板等上使用,所以通常在目標物2(電子器件)之底面23未形成導電膜。此外,目標物2之外形不限於長方體,可為例如圓柱及半球等。另外,目標物2不限於立體物,可為面狀物。
First, as shown in FIG1(a), the
接著,如圖1(b)所示地使用前述導電性組成物,在目標物2之表面上形成由該導電性組成物構成之液膜4。因為導電性組成物含有作為接著性樹脂之環氧樹脂,所以液膜4附著在目標物2之表面上。在本實施形態中,藉由噴塗在目標物2之表面上形成液膜4。噴塗係使用例如噴塗機。藉由噴塗來形成液膜4的話,透過噴霧角度及噴嘴位置的調整,便能相較於濺鍍等其他塗布更輕易地控制側面22之液膜4的膜厚。噴霧角度及噴嘴位置係調整成使頂面21及各側面22之液膜4的膜厚大致相同。
Next, as shown in FIG. 1( b ), the conductive composition is used to form a
接著,乾燥液膜4,如圖1(c)所示地形成粒子膜5。藉由液膜4之乾燥,導電性組成物中之分散媒蒸發,銅奈米粒子凝聚並形成作為凝聚體之粒子膜5。粒子膜5主要由銅奈米粒子構成且包含分散劑、環氧樹脂及硬化劑。粒子膜5因為包含環氧樹脂,所以附著在目標物2之表面上。
Next, the
接著,如圖1(d)所示地在甲酸環境下燒製粒子膜5以形成導電膜1。粒子膜5之燒製係利用加熱所為之熱燒製且例如使用甲酸迴流裝置來進行。在燒製中,粒子膜5中之銅奈米粒子燒結而形成導電膜1並且密接於目標物2。導電膜1具有導電性。此外,藉由燒製之熱,粒子膜5中之環氧樹脂與硬化劑進行化學反應且環氧樹脂硬化。藉由環氧樹脂之硬化,導電膜1對目標物2之密接性提高。
Next, as shown in FIG. 1( d ), the
如此,在第一實施形態中,導電性組成物用於在燒製中利用甲酸之燒製並在燒製後顯現導電性。 Thus, in the first embodiment, the conductive composition is used for the firing using formic acid and exhibits conductivity after firing.
以上,依據本實施形態之導電性組成物,使用銅奈米粒子作為導電性粒子,因此成本比使用銀粒子低。因為銅具有優異導電性,所以藉由使用該導電性組成物形成之導電膜1的電阻率低且電磁屏蔽效果高。即使導電膜1薄,電磁屏蔽效果亦因於與空氣之界面的電磁波反射而為高。
As described above, according to the conductive composition of this embodiment, copper nanoparticles are used as conductive particles, so the cost is lower than that of silver particles. Since copper has excellent conductivity, the
在使用該導電性組成物之導電膜形成方法中,因為粒子膜5包含銅奈米粒子,所以燒製需要之溫度低且燒製時間短。因此,因燒製所致之對目標物2(電子器件等)的影響小。此外,因為導電膜1由銅奈米粒子形成,所以即使在低溫下燒製亦充分地進行,電阻率低且電磁屏蔽效果高。
In the conductive film forming method using the conductive composition, since the
粒子膜5中之銅奈米粒子的最外側表面因大氣中包含之氧而氧化並具有表面氧化皮膜。在該導電膜形成方法中,藉由在甲酸環境下燒製粒子膜5,銅奈米粒子之表面氧化皮膜被甲酸還原,形成之導電膜1的電阻率低且電磁屏蔽效果高。
The outermost surface of the copper nanoparticles in the
直到在目標物2之表面上形成由該導電性組成物構成之液膜都需要導電性組成物中之分散劑以使銅奈米粒子分散。但是,殘留在導電膜1中之分散劑會使電阻增加。分散劑係包含氮原子或磷原子之高分子化合物。氮原子及磷原子之負電性與碳原子不同且在有機分子骨架中反應性高。因此,在甲酸環境下燒製時,會促進分散劑的分解反應。因為分散劑分解,所以形成之導電膜1的電阻率低且電磁屏蔽效果高。即使導電膜1薄,電磁屏蔽效果亦因於與空氣之界面的電磁波反射而為高。
Until a liquid film composed of the conductive composition is formed on the surface of the
在本實施形態中,分散劑係具有胺之分支聚酯或磷酸聚酯。分散劑係具有胺之分支聚酯時,因為胺係鹼性,所以容易與酸性之甲酸反應,因此可藉由甲酸促進分解。分散劑係磷酸聚酯時,因為磷酸基係酸基,所以只用酸鹼反應並無法理解其與甲酸之關係。形成之導電膜1的電阻率低的情形係很難預測到的,且係本申請案之發明人進行許多實驗後發現。
In this embodiment, the dispersant is a branched polyester or a phosphate polyester having an amine. When the dispersant is a branched polyester having an amine, since the amine is alkaline, it is easy to react with acidic formic acid, and thus the decomposition can be promoted by formic acid. When the dispersant is a phosphate polyester, since the phosphate group is an acid group, it is impossible to understand its relationship with formic acid by only using acid-base reaction. The low resistivity of the formed
導電性組成物中之環氧樹脂在燒製時硬化而提高導電膜1之密接性。但是,因為導電膜1中之硬化環氧樹脂係絕緣物,所以導電膜1之電阻率升高。因此,導電性組成物中之液狀環氧樹脂濃度的具體數值應依據實驗設定成兼顧到形成導電膜1之密接性及低電阻率。
The epoxy resin in the conductive composition hardens during firing to improve the adhesion of the
但是,如後述實驗結果所見地,環氧樹脂即使比良好地兼顧導電膜1之密接性及電阻率的濃度稍高,對導電膜1之電阻率亦幾乎沒有不良影響(參照實施例1及2、實施例4及5、實施例6及7等)。相反地,環氧樹脂即使比良好地兼顧導電膜1之密接性及電阻率的濃度稍低,對導電膜1之電阻率亦不太有好影響(參照實施例1及3)。
However, as shown in the experimental results described below, even if the concentration of the epoxy resin is slightly higher than that which satisfies both the adhesion and resistivity of the
因為放射無用輻射雜訊之電子器件(目標物2)係以高頻動作,所以無用輻射雜訊係高頻電磁波。一般而言,在介質中傳播之電磁波在不同介質之界面中,因介質之阻抗差異而產生反射。導電膜1形成在目標物2之表面上且存在空氣中。因為空氣係優異之絕緣體,所以阻抗非常高。導電膜1因為具有導電性所以阻抗非常低。目標物2之表層部的阻抗比導電膜1高。目標物2放射之電磁波因阻抗差異而在目標物2與導電膜1之界面反射,一部份射入導電膜1,在導電膜1內衰減,在導電膜1與空氣之界面反射且一部份射出至空氣中。由外部逆向地放射至目標物2之電磁波因阻抗差異而在空氣與導電膜1之界面反射,一部份射入導電膜1,在導電膜1內衰減,在導電膜1與目標物2之界面反射且一部份射入目標物2。該等反射及衰減現象中,對高頻電磁波之遮蔽而言,利用導電膜1與空氣之大的阻抗差異所獲得之反射的貢獻極大。因此,導電膜1之表層部的導電性越高,於與空氣之界面的阻抗差異越大,遮蔽無用輻射雜訊之電磁屏蔽效果越高。
Since the electronic device (target 2) that radiates the unwanted radiation noise operates at a high frequency, the unwanted radiation noise is a high-frequency electromagnetic wave. Generally speaking, electromagnetic waves propagating in a medium are reflected at the interface between different media due to the difference in impedance of the medium. The
由實驗結果推論,在甲酸環境下之燒製中,在粒子膜5或導電膜1之表面附近,作為酸之甲酸分解作為鹼性含氮化合物之硬化劑並阻礙環氧樹脂之硬化。此外,甲酸因為酸性強,所以使環氧環開環。即,在燒製中,銅奈米粒子之燒結、環氧樹脂之硬化、硬化劑之分解、環氧樹脂之開環同時地進行。藉由硬化
劑之分解及環氧樹脂之開環,在導電膜1之表面附近,環氧樹脂之影響小且電阻率低。因為導電膜1之電阻率係使測量用之電極接觸導電膜1之表面來測量,所以測得低電阻率。導電膜1之表層部因為電阻率低,所以對高頻之無用輻射雜訊的電磁屏蔽效果因於與空氣之界面的電磁波反射而為高。導電膜1與目標物2之界面因為遠離導電膜1之表面,所以不易與甲酸反應,可進行環氧樹脂之硬化並提高導電膜之密接性。
It is inferred from the experimental results that during the firing in a formic acid environment, near the surface of the
(第二實施形態) (Second implementation form)
以下說明本發明第二實施形態之導電性組成物。第二實施形態之導電性組成物具有與第一實施形態同樣之組成。在以下說明中,與第一實施形態同等處賦予相同符號。與第一實施形態同等處之詳細說明省略。 The following describes the conductive composition of the second embodiment of the present invention. The conductive composition of the second embodiment has the same composition as the first embodiment. In the following description, the same symbols are given to the same parts as the first embodiment. The detailed description of the same parts as the first embodiment is omitted.
該導電性組成物係用於燒製且在燒製後顯現導電性。在第二實施形態中在燒製前利用甲酸(在燒製前浸漬在甲酸水溶液中)。 The conductive composition is used for firing and exhibits conductivity after firing. In the second embodiment, formic acid is used before firing (immersion in a formic acid aqueous solution before firing).
該導電性組成物含有銅奈米粒子、液體分散媒、分散劑及熱硬化性有機基質。分散劑使銅奈米粒子分散在分散媒中。 The conductive composition contains copper nanoparticles, a liquid dispersion medium, a dispersant, and a thermosetting organic matrix. The dispersant disperses the copper nanoparticles in the dispersion medium.
分散媒係有機溶劑。 Dispersing medium is organic solvent.
分散劑係包含氮原子或磷原子(氮族元素)之高分子化合物。 Dispersants are high molecular weight compounds containing nitrogen atoms or phosphorus atoms (nitrogen group elements).
有機基質係由液狀環氧樹脂及硬化劑構成。硬化劑使該環氧樹脂硬化。硬化劑使環氧樹脂硬化。該硬化劑係鹼性含氮化合物。 The organic matrix is composed of a liquid epoxy resin and a hardener. The hardener hardens the epoxy resin. The hardener hardens the epoxy resin. The hardener is an alkaline nitrogen-containing compound.
分散媒因為未殘存在燒製導電性組成物而形成之導電膜中,所以不影響導電膜之性質。因此,分散媒可將銅奈米粒子分散在其中且只要可溶解有機基質即可,不限於特定溶劑。在本實施形態中,分散媒係例如環己酮。環己酮係極性非質子性溶劑。分散媒可為環己酮以外之極性非質子性溶劑、極性質子性溶劑、無極性溶劑。極性非質子性溶劑係例如乙酸丁酯、N,N-二甲基甲醯胺、丙酮、丙二醇一甲基醚乙酸酯、丙二醇一甲基醚、四氫呋喃、α-萜品醇、N-甲基-2-吡咯啶酮。極性質子性溶劑係例如異丙醇、乙醇。無極性溶劑係例如環己烷、二乙基醚、1,4-二烷、甲苯、庚烷、正十四烷。此外,分散媒可為多種溶劑之混合物。 Since the dispersing medium does not remain in the conductive film formed by firing the conductive composition, it does not affect the properties of the conductive film. Therefore, the dispersing medium can disperse the copper nanoparticles therein and is not limited to a specific solvent as long as it can dissolve the organic matrix. In this embodiment, the dispersing medium is, for example, cyclohexanone. Cyclohexanone is a polar aprotic solvent. The dispersing medium can be a polar aprotic solvent other than cyclohexanone, a polar protic solvent, or a non-polar solvent. Polar aprotic solvents are, for example, butyl acetate, N,N-dimethylformamide, acetone, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, tetrahydrofuran, α-terpineol, and N-methyl-2-pyrrolidone. Polar protic solvents include isopropanol and ethanol. Nonpolar solvents include cyclohexane, diethyl ether, 1,4-dihydroquinone, In addition, the dispersion medium may be a mixture of various solvents.
在本實施形態中,分散劑係具有胺之分支聚酯或磷酸聚酯。胺具有氮原子。磷酸聚酯具有磷原子(氮族元素)。 In this embodiment, the dispersant is a branched polyester or a phosphate polyester having an amine. The amine has a nitrogen atom. The phosphate polyester has a phosphorus atom (a nitrogen group element).
在本實施形態中,硬化劑係選自於由咪唑衍生物、改性胺及苯酚類芳香族胺構成之群組。該等硬化劑都是胺,即鹼性含氮化合物。 In this embodiment, the hardener is selected from the group consisting of imidazole derivatives, modified amines and phenolic aromatic amines. These hardeners are all amines, i.e., alkaline nitrogen-containing compounds.
以下參照圖2(a)至(f)說明使用該導電性組成物之導電膜形成方法。該導電膜形成方法係在目標物之表面上形成導電膜的方法。目標物在本實施形態中係電子器件。 The following describes a method for forming a conductive film using the conductive composition with reference to FIGS. 2(a) to (f). The conductive film forming method is a method for forming a conductive film on the surface of a target object. In this embodiment, the target object is an electronic device.
首先,如圖2(a)所示地將目標物2置於作業面3。在本實施形態中,作業面3係作業用板30之頂面。
First, place the
接著,如圖2(b)所示地使用第二實施形態之導電性組成物,在目標物2之表面上形成由該導電性組成物構成之液膜4。因為導電性組成物含有作為接著性樹脂之環氧樹脂,所以液膜4附著在目標物2之表面上。在本實施形態中,藉由噴塗在目標物2之表面上形成液膜4。噴塗係使用例如噴塗機。藉由噴塗來形成液膜4的話,透過噴霧角度及噴嘴位置的調整,便能相較於濺鍍等其他塗布更輕易地控制側面22之液膜4的膜厚。噴霧角度及噴嘴位置係調整成使頂面21及各側面22之液膜4的膜厚大致相同。
Next, as shown in FIG. 2( b ), a
接著,乾燥液膜4,如圖2(c)所示地形成粒子膜5。藉由液膜4之乾燥,導電性組成物中之分散媒蒸發,銅奈米粒子凝聚並形成作為凝聚體之粒子膜5。粒子膜5主要由銅奈米粒子構成且包含分散劑、環氧樹脂及硬化劑。粒子膜5因為包含環氧樹脂,所以附著在目標物2之表面上。
Next, the
接著,如圖2(d)所示地將形成有粒子膜5之目標物2浸漬在甲酸水溶液6中。甲酸水溶液6溶解粒子膜5包含之分散劑。
Next, as shown in FIG2(d), the
接著,如圖2(e)所示地由甲酸水溶液6取出形成有粒子膜5之目標物2並去除該粒子膜5上之液體。在本實施形態中,吹氣去除粒子膜5上之液體。去除粒子膜5上之液體的手段不限於吹氣去除。例如,可將離心力等加速度施加於目標物2以去除粒子膜5上之液體。此外,去除之液體係溶有分散劑之甲酸水溶液。另外,即使乾燥粒子膜5亦只蒸發液體中之水分,因此液體中之分散劑殘留且不能去除液體。
Next, as shown in FIG. 2(e), the
接著,如圖2(f)所示地在鈍性環境下燒製粒子膜5以形成導電膜1。粒子膜5之燒製係利用加熱所為之熱燒製。鈍性環境係例如氮環境。在燒製中,粒子膜5中之銅奈米粒子燒結而形成導電膜1並且密接於目標物2。導電膜1具有導電性。此外,藉由燒製之熱,粒子膜5中之環氧樹脂與硬化劑進行化學反應且環氧樹脂硬化。藉由環氧樹脂之硬化,導電膜1對目標物2之密接性提高。
Next, as shown in FIG. 2(f), the
如此,在第二實施形態中,導電性組成物用於在燒製前利用甲酸之燒製且在燒製後顯現導電性。 Thus, in the second embodiment, the conductive composition is used for firing with formic acid before firing and exhibits conductivity after firing.
以上,依據本實施形態之導電性組成物,使用銅奈米粒子作為導電性粒子,因此成本比使用銀粒子低。因為銅具有優異導電性,所以藉由使用該導電性組成物形成之導電膜1的電阻率低且電磁屏蔽效果高。
As described above, according to the conductive composition of this embodiment, copper nanoparticles are used as conductive particles, so the cost is lower than that of silver particles. Since copper has excellent conductivity, the
在使用該導電性組成物之導電膜形成方法中,粒子膜5因為包含銅奈米粒子,所以燒製需要之溫度低且燒製時間短。因此,因燒製所致之對目標物2(電子器件等)的影響小。此外,因為導電膜1由銅奈米粒子形成,所以即使在低溫下燒製亦充分地進行,電阻率低且電磁屏蔽效果高。
In the conductive film forming method using the conductive composition, the
粒子膜5中之銅奈米粒子的最外面因大氣中包含之氧而氧化並具有表面氧化皮膜。在該導電膜形成方法中,因為在燒製前將粒子膜5浸漬於甲酸水溶液6中,所以銅奈米粒子之表面氧化皮膜被甲酸還原,形成之導電膜1的電阻率低且電磁屏蔽效果高。
The outermost surface of the copper nanoparticles in the
直到在目標物2之表面上形成由該導電性組成物構成之液膜都需要導電性組成物中之分散劑使銅奈米粒子分散。但是,殘留在導電膜1中之分散劑會使電阻增加。在本實施形態中,分散劑係具有胺之分支聚酯或磷酸聚酯。
Until a liquid film composed of the conductive composition is formed on the surface of the
分散劑係具有胺之分支聚酯時,因為胺係鹼性,所以容易與酸性之甲酸反應,因此容易溶解在甲酸水溶液6中。因為分散劑由導電性組成物溶出,所以形成之導電膜1的電阻率低且電磁屏蔽效果高。即使導電膜1薄,電磁屏蔽效果亦因於與空氣之界面的電磁波反射而為高。
When the dispersant is a branched polyester having amine, since the amine is alkaline, it easily reacts with acidic formic acid and is therefore easily dissolved in the formic acid
分散劑係磷酸聚酯時,因為磷酸基係酸基,所以只用酸鹼反應並無法理解其與甲酸水溶液6之關係。形成之導電膜1的電阻率低的情形係很難預測到的,且係本申請案之發明人進行許多實驗後發現。
When the dispersant is a phosphate polyester, since the phosphate group is an acid group, it is impossible to understand its relationship with the formic acid
甲酸與硬化劑之鹼性含氮化合物反應而形成鹽時,因為磷酸之解離常數比甲酸大,所以由甲酸之鹽游離甲酸而生成磷酸之鹽。因此,據認為有分散劑容易由導電性組成物溶出至甲酸水溶液6中的可能性。此外,該推論係用以說明實驗結果的一種說法且未限定本申請案發明之技術範圍。
When formic acid reacts with the alkaline nitrogen-containing compound of the hardener to form a salt, the dissociation constant of phosphoric acid is greater than that of formic acid, so the formic acid salt dissociates the formic acid to form the phosphoric acid salt. Therefore, it is considered that there is a possibility that the dispersant is easily dissolved from the conductive composition into the formic acid
與第一實施形態同樣地推論於第二實施形態之導電性組成物中的環氧樹脂。藉由在燒製前浸漬於甲酸水溶液中,在粒子膜5之表面附近,作為酸之甲酸分解作為鹼性含氮化合物之硬化劑。此外,甲酸因為酸性強,所以使環氧環開環。因此,燒製後在導電膜1之表面附近,環氧樹脂之影響小且電阻率低。因為導電膜1之電阻率係使測量用之電極接觸導電膜1之表面來測量,所以測得低電阻率。導電膜1之表層部因為電阻率低,所以對高頻之無用輻射雜訊的電磁屏
蔽效果因於與空氣之界面的電磁波反射而為高。粒子膜5與目標物2之界面因為遠離粒子膜5之表面,所以不易與甲酸反應,可進行環氧樹脂之硬化並提高導電膜1之密接性。
The same inference is made about the epoxy resin in the conductive composition of the second embodiment as in the first embodiment. By immersing the
製作作為本發明第一實施形態之導電性組成物及用以比較之導電性組成物並使用該導電性組成物嘗試形成導電膜。導電性組成物係用以下方法作成。使用中位直徑40至50nm之銅的球狀粒子作為銅奈米粒子。依據各實驗條件,將秤取到之分散劑、環氧樹脂及硬化劑溶在分散媒中並使銅奈米粒子分散於其中。接著,將製備好的導電性組成物噴塗在目標物之表面上。接著,乾燥導電性組成物之液膜並形成粒子膜。接著,在甲酸環境下燒製粒子膜。接著,評價形成之導電膜對目標物之密接性及體積電阻率。 A conductive composition as the first embodiment of the present invention and a conductive composition for comparison were prepared and used to attempt to form a conductive film. The conductive composition was prepared by the following method. Spherical copper particles with a median diameter of 40 to 50 nm were used as copper nanoparticles. According to each experimental condition, the weighed dispersant, epoxy resin and hardener were dissolved in a dispersion medium and the copper nanoparticles were dispersed therein. Then, the prepared conductive composition was sprayed on the surface of the target object. Then, the liquid film of the conductive composition was dried to form a particle film. Then, the particle film was fired in a formic acid environment. Then, the adhesion and volume resistivity of the formed conductive film to the target object were evaluated.
密接性之評價係依據ASTM規格D2259來進行。該規格係在導電膜1中進行縱6條×橫6條之切割,作成2mm×2mm大小之25個塊,進行膠帶剝離試驗並按照剝離區域之比例賦予「0B」至「5B」之6階段等級。
The evaluation of adhesion is carried out according to ASTM specification D2259. This specification is to cut 6 vertical strips × 6 horizontal strips in the
[實施例1] [Implementation Example 1]
分散媒係環己酮(在實施例1至23、比較例1至3中相同)。銅奈米粒子之濃度相對導電性組成物全體(以下,就質量%而言同樣)係37.4質量%。分散劑係具有胺之分支聚酯(BYK公司製,商品名「DISPERBYK(註冊商標)-2155」)且其濃度係1.5質量%。環氧樹脂係在常溫下為液狀之環氧樹脂(Mitsubishi Chemical公司(股)製,商品名「YX7105」)且其濃度係2.8質量%。硬化劑係作為苯酚類芳香族胺之參二甲胺基甲基苯酚(Mitsubishi Chemical公司(股)製,商品名「jER CURE(註 冊商標)3010」)且其濃度係3.63質量%。燒製溫度係150℃(在實施例1至39、比較例1至3中相同)。 The dispersion medium is cyclohexanone (the same in Examples 1 to 23 and Comparative Examples 1 to 3). The concentration of the copper nanoparticles relative to the entire conductive composition (hereinafter, the same in terms of mass%) is 37.4 mass%. The dispersant is a branched polyester having amine (manufactured by BYK, trade name "DISPERBYK (registered trademark)-2155") and its concentration is 1.5 mass%. The epoxy resin is an epoxy resin that is liquid at room temperature (manufactured by Mitsubishi Chemical Co., Ltd., trade name "YX7105") and its concentration is 2.8 mass%. The curing agent is tris-dimethylaminomethylphenol (manufactured by Mitsubishi Chemical Co., Ltd., trade name "jER CURE (registered trademark) 3010") which is a phenolic aromatic amine, and its concentration is 3.63% by mass. The firing temperature is 150°C (the same in Examples 1 to 39 and Comparative Examples 1 to 3).
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率(體積電阻率)係2.0×10-4Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity (volume resistivity) of the conductive film is 2.0×10 -4 Ω. cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例2] [Example 2]
銅奈米粒子之濃度係與實施例1大致相同之35.9質量%。分散劑係與實施例1相同者且其濃度係與實施例1大致相同之1.4質量%。環氧樹脂係與實施例1相同者且其濃度係比實施例1高之4.5質量%。硬化劑係與實施例1相同者且其濃度係5.79質量%。 The concentration of copper nanoparticles is 35.9 mass%, which is approximately the same as that of Example 1. The dispersant is the same as that of Example 1 and its concentration is 1.4 mass%, which is approximately the same as that of Example 1. The epoxy resin is the same as that of Example 1 and its concentration is 4.5 mass%, which is higher than that of Example 1. The hardener is the same as that of Example 1 and its concentration is 5.79 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係1.1×10-4Ω.cm。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 1.1×10 -4 Ω.cm.
即,在實施例2中,雖然將環氧樹脂之濃度增加至實施例1之1.6倍,但形成之導電膜的電阻率未增加。這是乍看意外之結果,但如前述地,推測係由於導電膜之表層部因甲酸之作用而不易受環氧樹脂之影響的緣故。此外,電阻率稍微減少視為變動之範圍。 That is, in Example 2, although the concentration of epoxy resin was increased to 1.6 times that of Example 1, the resistivity of the formed conductive film did not increase. This is an unexpected result at first glance, but as mentioned above, it is speculated that the surface of the conductive film is not easily affected by the epoxy resin due to the action of formic acid. In addition, a slight decrease in resistivity is considered to be within the range of variation.
[實施例3] [Implementation Example 3]
銅奈米粒子之濃度係與實施例1大致相同之39.1質量%。分散劑係與實施例1相同者且其濃度係與實施例1大致相同之1.6質量%。環氧樹脂係與實施例1相同 者且其濃度係比實施例1低之1.0質量%。硬化劑係與實施例1相同者且其濃度係1.26質量%。 The concentration of copper nanoparticles is 39.1 mass%, which is approximately the same as that of Example 1. The dispersant is the same as that of Example 1 and its concentration is 1.6 mass%, which is approximately the same as that of Example 1. The epoxy resin is the same as that of Example 1 and its concentration is 1.0 mass%, which is lower than that of Example 1. The hardener is the same as that of Example 1 and its concentration is 1.26 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中剝離之塊係ASTM規格D2259之等級3B。等級3B係剝離之塊在5%至15%之範圍內。實際上使用導電膜作為電磁屏蔽時,並不會於導電膜進行細切割,所以若有該程度之密接性則使用可能性高。導電膜之電阻率係1.7×10-4Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, the peeled pieces are grade 3B of ASTM specification D2259. Grade 3B means the peeled pieces are in the range of 5% to 15%. When the conductive film is actually used as an electromagnetic shield, it is not finely cut, so if there is such a degree of adhesion, it is likely to be used. The resistivity of the conductive film is 1.7×10 -4 Ω. cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,在實施例3中,相較於實施例1顯著地減少環氧樹脂之濃度,從而得到導電膜之密接性降低的結果。此外,在實施例3中,雖然將環氧樹脂之濃度減少至實施例1之0.36倍,但形成之導電膜的電阻率只降低至0.85倍。因為導電膜之電阻率的測量係與剝離試驗獨立地進行,所以電阻率未因塊之一部份剝離而增加。如前述地,推測係由於導電膜之表層部因甲酸之作用而不易受環氧樹脂之影響的緣故。 That is, in Example 3, the concentration of epoxy resin is significantly reduced compared to Example 1, resulting in a decrease in the adhesion of the conductive film. In addition, in Example 3, although the concentration of epoxy resin is reduced to 0.36 times that of Example 1, the resistivity of the formed conductive film is only reduced to 0.85 times. Because the resistivity of the conductive film is measured independently from the peeling test, the resistivity does not increase due to the partial peeling of the block. As mentioned above, it is speculated that the surface of the conductive film is not easily affected by the epoxy resin due to the action of formic acid.
(比較例1) (Comparative example 1)
進行如下的低濃度實驗作為比較例,亦即,使環氧樹脂之濃度比實施例3更低,而使導電性組成物無法稱得上實質地包含環氧樹脂。銅奈米粒子之濃度係與實施例3大致相同之39.5質量%。分散劑係與實施例1至3相同者且其濃度係與實施例3相同之1.6質量%。環氧樹脂係與實施例1至3相同者且其濃度係比實施例3更低之0.5質量%。硬化劑係與實施例1至3相同者且其濃度係0.64質量%。 The following low concentration experiment was conducted as a comparative example, that is, the concentration of the epoxy resin was made lower than that of Example 3, so that the conductive composition could not be said to substantially contain the epoxy resin. The concentration of the copper nanoparticles was 39.5 mass%, which was approximately the same as that of Example 3. The dispersant was the same as that of Examples 1 to 3 and its concentration was 1.6 mass%, which was the same as that of Example 3. The epoxy resin was the same as that of Examples 1 to 3 and its concentration was 0.5 mass%, which was lower than that of Example 3. The hardener was the same as that of Examples 1 to 3 and its concentration was 0.64 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中剝離之塊係ASTM規格D2259之等級0B。等級0B係剝離之塊超過65%。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, the peeled pieces are grade 0B of ASTM specification D2259. Grade 0B means that the peeled pieces exceed 65%.
即,確認了在如導電性組成物無法稱得上實質地包含環氧樹脂的低濃度下得不到導電膜之密接性。此外,由比較例1之結果可知,使環氧樹脂之濃度完全地為0亦得不到導電膜之密接性。作為絕緣物之環氧樹脂的濃度具體值最好設定成兼顧利用環氧樹脂獲得之導電膜與目標物的密接性及利用低電阻率獲得之電磁屏蔽效果(設計的事項)。 That is, it was confirmed that the conductive film cannot be adhered to at a low concentration such that the conductive composition cannot be said to substantially contain epoxy resin. In addition, from the results of Comparative Example 1, it can be seen that the conductive film cannot be adhered to even if the concentration of epoxy resin is completely 0. The specific concentration value of epoxy resin as an insulator is preferably set to take into account both the adhesion between the conductive film obtained by epoxy resin and the target object and the electromagnetic shielding effect obtained by low resistivity (design matter).
[實施例4] [Implementation Example 4]
銅奈米粒子之濃度係與實施例1大致相同之38.4質量%。分散劑係與實施例1相同者且其濃度係與實施例1相同之1.5質量%。環氧樹脂係與實施例1相同者且其濃度係與實施例1大致相同之2.9質量%。硬化劑係咪唑衍生物(Mitsubishi Chemical公司(股)製,商品名「jER CURE(註冊商標)P200H50」)且其濃度係0.99質量%。 The concentration of copper nanoparticles is 38.4 mass%, which is approximately the same as that of Example 1. The dispersant is the same as that of Example 1 and its concentration is 1.5 mass%, which is approximately the same as that of Example 1. The epoxy resin is the same as that of Example 1 and its concentration is 2.9 mass%, which is approximately the same as that of Example 1. The hardener is an imidazole derivative (manufactured by Mitsubishi Chemical Co., Ltd., trade name "jER CURE (registered trademark) P200H50") and its concentration is 0.99 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係1.5×10-3Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 1.5×10 -3 Ω. cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使將硬化劑換成咪唑衍生物,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even if the hardener is replaced with an imidazole derivative, a conductive film suitable for electromagnetic shielding of electronic devices can be formed.
[實施例5] [Implementation Example 5]
銅奈米粒子之濃度係與實施例4大致相同之37.5質量%。分散劑係與實施例4相同者且其濃度係與實施例4相同之1.5質量%。環氧樹脂係與實施例4相同者且其濃度係比實施例4高之4.7質量%。硬化劑係與實施例4相同者且其濃度係1.61質量%。 The concentration of copper nanoparticles is 37.5 mass%, which is approximately the same as that of Example 4. The dispersant is the same as that of Example 4 and its concentration is 1.5 mass%, which is the same as that of Example 4. The epoxy resin is the same as that of Example 4 and its concentration is 4.7 mass%, which is higher than that of Example 4. The hardener is the same as that of Example 4 and its concentration is 1.61 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係5.8×10-4Ω.cm。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 5.8×10 -4 Ω.cm.
即,在實施例5中,雖然將環氧樹脂之濃度增加至實施例4之1.6倍,但形成之導電膜的電阻率未增加。即,實施例5相對於實施例4之傾向與實施例2相對於實施例1之傾向相同。推測這是由於導電膜之表層部因甲酸之作用而不易受環氧樹脂之影響的緣故。此外,電阻率稍微減少視為變動之範圍,但據認為反應物之濃度越高反應速度越高亦是一原因。 That is, in Example 5, although the concentration of epoxy resin is increased to 1.6 times that of Example 4, the resistivity of the formed conductive film does not increase. That is, the tendency of Example 5 relative to Example 4 is the same as the tendency of Example 2 relative to Example 1. It is speculated that this is because the surface of the conductive film is not easily affected by the epoxy resin due to the action of formic acid. In addition, a slight decrease in resistivity is considered to be a range of variation, but it is also believed that the higher the concentration of the reactant, the higher the reaction rate.
[實施例6] [Implementation Example 6]
銅奈米粒子之濃度係與實施例1、4大致相同之37.9質量%。分散劑係與實施例1、4相同者且其濃度係與實施例1、4相同之1.5質量%。環氧樹脂係在常溫下為液狀之環氧樹脂(Mitsubishi Chemical公司(股)製,商品名「828」)且其濃度係與實施例1相同之2.8質量%。硬化劑係與實施例4相同者且其濃度係2.48質量%。 The concentration of copper nanoparticles is 37.9 mass%, which is approximately the same as that of Examples 1 and 4. The dispersant is the same as that of Examples 1 and 4 and its concentration is 1.5 mass%, which is the same as that of Examples 1 and 4. The epoxy resin is a liquid epoxy resin at room temperature (manufactured by Mitsubishi Chemical Co., Ltd., trade name "828") and its concentration is 2.8 mass%, which is the same as that of Example 1. The hardener is the same as that of Example 4 and its concentration is 2.48 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係3.7×10-3Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 3.7×10 -3 Ω. cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使使用不同之環氧樹脂,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even if different epoxy resins are used, a conductive film suitable for electromagnetic shielding of electronic devices can be formed.
[實施例7] [Implementation Example 7]
銅奈米粒子之濃度係與實施例6大致相同之36.6質量%。分散劑係與實施例6相同者且其濃度係與實施例6相同之1.5質量%。環氧樹脂係與實施例6相同者且其濃度係比實施例6高之4.6質量%。硬化劑係與實施例6相同者且其濃度係3.99質量%。 The concentration of copper nanoparticles is 36.6 mass%, which is approximately the same as that of Example 6. The dispersant is the same as that of Example 6 and its concentration is 1.5 mass%, which is the same as that of Example 6. The epoxy resin is the same as that of Example 6 and its concentration is 4.6 mass%, which is higher than that of Example 6. The hardener is the same as that of Example 6 and its concentration is 3.99 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係2.7×10-3Ω.cm。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 2.7×10 -3 Ω.cm.
即,在實施例7中,雖然將環氧樹脂之濃度增加至實施例6之1.6倍,但形成之導電膜的電阻率未增加。亦即,實施例7相對於實施例6之傾向與實施例2相對於實施例1之傾向相同。推測這是由於導電膜之表層部因甲酸之作用而不易受環氧樹脂之影響的緣故。此外,電阻率稍微減少視為變動之範圍。 That is, in Example 7, although the concentration of epoxy resin is increased to 1.6 times that of Example 6, the resistivity of the formed conductive film does not increase. That is, the inclination of Example 7 relative to Example 6 is the same as the inclination of Example 2 relative to Example 1. It is speculated that this is because the surface of the conductive film is not easily affected by the epoxy resin due to the action of formic acid. In addition, a slight decrease in resistivity is considered as a range of variation.
[實施例8] [Implementation Example 8]
銅奈米粒子之濃度係與實施例1、6大致相同之37.8質量%。分散劑係與實施例1、6相同者且其濃度係與實施例1、6相同之1.5質量%。環氧樹脂係在常溫下為液狀之苯酚酚醛清漆型環氧樹脂(Mitsubishi Chemical公司(股)製,商品名「152」)且其濃度係與實施例1、6相同之2.8質量%。硬化劑係與實施例6相同者且其濃度係2.67質量%。 The concentration of copper nanoparticles is 37.8 mass % which is approximately the same as that of Examples 1 and 6. The dispersant is the same as that of Examples 1 and 6 and its concentration is 1.5 mass % which is the same as that of Examples 1 and 6. The epoxy resin is a phenol novolac type epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., trade name "152") which is liquid at room temperature and its concentration is 2.8 mass % which is the same as that of Examples 1 and 6. The hardener is the same as that of Example 6 and its concentration is 2.67 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係5.5×10-3Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 5.5×10 -3 Ω. cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使使用類型(種類)不同之環氧樹脂,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even if different types of epoxy resins are used, a conductive film suitable for electromagnetic shielding of electronic devices can be formed.
[實施例9] [Implementation Example 9]
銅奈米粒子之濃度係與實施例8大致相同之36.5質量%。分散劑係與實施例8相同者且其濃度係與實施例8相同之1.5質量%。環氧樹脂係與實施例8相同者且其濃度係比實施例8高之4.6質量%。硬化劑係與實施例8相同者且其濃度係4.30質量%。 The concentration of copper nanoparticles is 36.5 mass%, which is approximately the same as that of Example 8. The dispersant is the same as that of Example 8 and its concentration is 1.5 mass%, which is the same as that of Example 8. The epoxy resin is the same as that of Example 8 and its concentration is 4.6 mass%, which is higher than that of Example 8. The hardener is the same as that of Example 8 and its concentration is 4.30 mass%.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係6.2×10-3Ω.cm。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 6.2×10 -3 Ω.cm.
即,在實施例9中,雖然將環氧樹脂之濃度增加至實施例8之1.6倍,但形成之導電膜的電阻率只增加至1.1倍。推測其原因為導電膜之表層部因甲酸之作用而不易受環氧樹脂之影響。 That is, in Example 9, although the concentration of epoxy resin was increased to 1.6 times that of Example 8, the resistivity of the formed conductive film was only increased to 1.1 times. It is speculated that the reason is that the surface of the conductive film is not easily affected by the epoxy resin due to the action of formic acid.
(比較例2) (Comparative example 2)
未使用環氧樹脂而使用苯酚樹脂來代替作為比較例。在苯酚樹脂中不需要硬化劑。銅奈米粒子之濃度係與實施例1大致相同之40質量%。分散劑係與實施 例1相同者且其濃度係與實施例1大致相同之1.6質量%。使用苯酚樹脂作為熱硬化性樹脂且其濃度係與實施例1大致相同之3質量%。 As a comparative example, phenol resin was used instead of epoxy resin. No hardener is required in phenol resin. The concentration of copper nanoparticles is 40 mass % which is approximately the same as that in Example 1. The dispersant is the same as that in Example 1 and its concentration is 1.6 mass % which is approximately the same as that in Example 1. Phenol resin is used as the thermosetting resin and its concentration is 3 mass % which is approximately the same as that in Example 1.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中剝離之塊係ASTM規格D2259之等級0B。等級0B係剝離之塊超過65%。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, the peeled pieces are grade 0B of ASTM specification D2259. Grade 0B means that the peeled pieces exceed 65%.
即,在導電性組成物中未實質地包含環氧樹脂而包含苯酚樹脂來代替時,得不到導電膜之密接性。 That is, when the conductive composition does not substantially contain epoxy resin but contains phenol resin instead, the adhesion of the conductive film cannot be obtained.
製作作為本發明第二實施形態之導電性組成物及用以比較之導電性組成物並使用該導電性組成物嘗試形成導電膜。導電性組成物係用與第一實施形態相同之方法作成。目標物使用與第一實施形態相同者。接著,在目標物之表面上噴塗作成之導電性組成物。接著,用加熱板在80℃下乾燥導電性組成物之液膜1分鐘並形成粒子膜。接著,將形成有粒子膜之目標物浸漬於3質量%之甲酸水溶液中。接著,由甲酸水溶液取出形成有粒子膜之目標物並藉由吹風機吹氣去除粒子膜上之液體。接著,在氮環境下燒製粒子膜。接著,評價形成之導電膜對目標物之密接性及體積電阻率。 A conductive composition as the second embodiment of the present invention and a conductive composition for comparison are prepared and used to attempt to form a conductive film. The conductive composition is prepared by the same method as the first embodiment. The target object is the same as the first embodiment. Then, the prepared conductive composition is sprayed on the surface of the target object. Then, the liquid film of the conductive composition is dried at 80°C for 1 minute using a heating plate to form a particle film. Then, the target object with the particle film formed is immersed in a 3 mass% formic acid aqueous solution. Then, the target object with the particle film formed is taken out from the formic acid aqueous solution and the liquid on the particle film is removed by blowing with a blower. Then, the particle film is fired in a nitrogen environment. Next, evaluate the adhesion and volume resistivity of the formed conductive film to the target object.
[實施例10] [Example 10]
銅奈米粒子之濃度係與實施例1大致相同之38質量%(以下,在實施例18以外之實施例及比較例3中亦相同)。分散劑係磷酸聚酯(BYK公司製,商品名「DISPERBYK(註冊商標)-111」)且其濃度係2質量%(以下,在實施例11至15中相同分散劑,2質量%)。環氧樹脂係與實施例1相同者且其濃度係與實施例1大致相 同之3質量%。硬化劑係咪唑衍生物(ADEKA公司(股)製,商品名「ADEAKHARDENER(註冊商標)EH-2021」)且其濃度係1質量%。 The concentration of copper nanoparticles is 38 mass % which is approximately the same as that of Example 1 (hereinafter, the same also applies to Examples other than Example 18 and Comparative Example 3). The dispersant is a phosphate polyester (manufactured by BYK, trade name "DISPERBYK (registered trademark) -111") and its concentration is 2 mass % (hereinafter, the same dispersant in Examples 11 to 15, 2 mass %). The epoxy resin is the same as that of Example 1 and its concentration is 3 mass % which is approximately the same as that of Example 1. The hardener is an imidazole derivative (manufactured by ADEKA Corporation, trade name "ADEAKHARDENER (registered trademark) EH-2021") and its concentration is 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係25μΩ.cm(25×10-6Ω.cm)且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, there is no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 25μΩ.cm (25×10 -6 Ω.cm) and is a low value suitable for electromagnetic shielding of electronic devices.
即,在燒製前將粒子膜浸漬於甲酸水溶液中,藉此形成了電阻率低之導電膜。該電阻率比在甲酸環境下進行燒製之實施例1至9(第一實施形態)低。 That is, the particle film is immersed in a formic acid aqueous solution before firing, thereby forming a conductive film with low resistivity. The resistivity is lower than that of Examples 1 to 9 (first embodiment) fired in a formic acid environment.
[實施例11] [Implementation Example 11]
環氧樹脂係與實施例10相同者且係相同濃度。硬化劑係改性胺(T&K TOKA公司(股)製,商品名「FUJICURE(註冊商標)7001」)且其濃度係1質量%。 The epoxy resin is the same as that in Example 10 and has the same concentration. The hardener is a modified amine (manufactured by T&K TOKA Co., Ltd., trade name "FUJICURE (registered trademark) 7001") and its concentration is 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係20μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 20μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使使用改性胺作為硬化劑,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even when a modified amine is used as a hardener, a conductive film suitable for electromagnetic shielding of electronic devices is formed.
[實施例12] [Implementation Example 12]
環氧樹脂係與實施例10相同者且係相同濃度。硬化劑與實施例10不同,係與實施例4至9相同之咪唑衍生物且其濃度係1質量%。 The epoxy resin is the same as that in Example 10 and has the same concentration. The hardener is different from that in Example 10 and is the same imidazole derivative as in Examples 4 to 9 and has a concentration of 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係51μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 51μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使使用不同之咪唑衍生物作為硬化劑,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even when different imidazole derivatives are used as hardeners, a conductive film suitable for electromagnetic shielding of electronic devices can be formed.
[實施例13] [Implementation Example 13]
環氧樹脂與實施例10至12不同,係與實施例6、7相同者且其濃度係3質量%。硬化劑係與實施例10相同之咪唑衍生物且其濃度係3質量%。 The epoxy resin is different from Examples 10 to 12, and is the same as Examples 6 and 7, and its concentration is 3% by mass. The hardener is the same imidazole derivative as in Example 10, and its concentration is 3% by mass.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係94μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 94μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使使用不同之環氧樹脂,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even if different epoxy resins are used, a conductive film suitable for electromagnetic shielding of electronic devices can be formed.
[實施例14] [Example 14]
環氧樹脂係與實施例13相同者且其濃度係與實施例13相同之3質量%。硬化劑係與實施例11相同之改性胺且其濃度係2質量%。 The epoxy resin is the same as that in Example 13 and its concentration is 3% by mass, which is the same as that in Example 13. The hardener is the same modified amine as that in Example 11 and its concentration is 2% by mass.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係36μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 36μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例15] [Implementation Example 15]
環氧樹脂係與實施例13、14相同者且其濃度係與實施例13、14相同之3質量%。硬化劑係與實施例12相同之咪唑衍生物且其濃度係2質量%。 The epoxy resin is the same as that in Examples 13 and 14 and its concentration is 3% by mass, which is the same as that in Examples 13 and 14. The hardener is the same imidazole derivative as that in Example 12 and its concentration is 2% by mass.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係222μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 222μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例16] [Implementation Example 16]
分散劑係與實施例1至9相同之分支聚酯且其濃度係2質量%(以下,在實施例18以外之實施例及比較例3中相同分散劑,2質量%)。環氧樹脂係與實施例13至15相同者且其濃度係與實施例13至15相同之3質量%。硬化劑係與實施例14相同之改性胺且其濃度係2質量%。 The dispersant is the same branched polyester as in Examples 1 to 9 and its concentration is 2 mass % (hereinafter, in Examples other than Example 18 and Comparative Example 3, the same dispersant is 2 mass %). The epoxy resin is the same as in Examples 13 to 15 and its concentration is 3 mass % as in Examples 13 to 15. The hardener is the same modified amine as in Example 14 and its concentration is 2 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係107μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 107μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使使用分支聚酯作為分散劑,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even when branched polyester is used as a dispersant, a conductive film suitable for electromagnetic shielding of electronic devices can be formed.
[實施例17] [Example 17]
環氧樹脂係與實施例10至12相同者且其濃度係與實施例10至12相同之3質量%(在實施例17至22及比較例3中相同環氧樹脂,3質量%)。硬化劑係與實施例10相同之咪唑衍生物且其濃度係與實施例10相同之1質量%。 The epoxy resin is the same as that in Examples 10 to 12 and its concentration is 3 mass % (3 mass %) as that in Examples 10 to 12 (same epoxy resin in Examples 17 to 22 and Comparative Example 3). The hardener is the same imidazole derivative as that in Example 10 and its concentration is 1 mass % as that in Example 10.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係60μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 60μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例18] [Implementation Example 18]
銅奈米粒子之濃度係與實施例16、17大致相同之37質量%。分散劑係與實施例16、17相同之分支聚酯且其濃度係1質量%。硬化劑係與實施例1至3相同之參二甲胺基甲基苯酚且其濃度係4質量%。 The concentration of copper nanoparticles is 37% by mass, which is approximately the same as in Examples 16 and 17. The dispersant is the same branched polyester as in Examples 16 and 17 and its concentration is 1% by mass. The hardener is the same tris-dimethylaminomethylphenol as in Examples 1 to 3 and its concentration is 4% by mass.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係30μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 30μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
即,即使在第二實施形態中使用參二甲胺基甲基苯酚作為硬化劑,亦形成適用於電子器件之電磁屏蔽的導電膜。 That is, even when 3,4-dimethylaminomethylphenol is used as a hardener in the second embodiment, a conductive film suitable for electromagnetic shielding of electronic devices is formed.
[實施例19] [Implementation Example 19]
硬化劑係改性胺(T&K TOKA公司(股)製,商品名「FUJICURE(註冊商標)FXR-1030」)且其濃度係1質量%。 The hardener is a modified amine (manufactured by T&K TOKA Co., Ltd., trade name "FUJICURE (registered trademark) FXR-1030") and its concentration is 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係72μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 72μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例20] [Example 20]
硬化劑係改性胺(T&K TOKA公司(股)製,商品名「FUJICURE(註冊商標)7000」)且其濃度係1質量%。 The hardener is a modified amine (manufactured by T&K TOKA Co., Ltd., trade name "FUJICURE (registered trademark) 7000") and its concentration is 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係65μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 65μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例21] [Example 21]
硬化劑係與實施例16相同之改性胺且其濃度係與實施例16相同之1質量%。 The hardener is the same modified amine as in Example 16 and its concentration is the same as in Example 16, 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係88μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 88μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例22] [Example 22]
硬化劑係改性胺(Mitsubishi Chemical公司(股)製,商品名「jER CURE(註冊商標)ST12」)且其濃度係2質量%。 The hardener is a modified amine (manufactured by Mitsubishi Chemical Co., Ltd., trade name "jER CURE (registered trademark) ST12") and its concentration is 2 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係110μΩ.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film is formed. There is no peeling block in the tape peeling test of the conductive film, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film is 110μΩ.cm, which is a low value suitable for electromagnetic shielding of electronic devices.
(比較例3) (Comparative example 3)
未使用硬化劑而使用硫醇來代替作為比較例。硫醇係具有硫原子之有機化合物。硬化劑係作為硫醇之3-巰基丙酸酯(Mitsubishi Chemical公司(股)製,商品名「jER CURE(註冊商標)QX40」)且其濃度係1質量%。 As a comparative example, a thiol was used instead of a hardener. A thiol is an organic compound having a sulfur atom. The hardener was 3-hydroxypropionate of thiol (manufactured by Mitsubishi Chemical Co., Ltd., trade name "jER CURE (registered trademark) QX40") and its concentration was 1 mass %.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊(ASTM規格D2259之等級5B)。但是,導電膜之電阻率過高而不能測量。 After firing, a conductive film is formed. There is no peeled block in the tape peeling test of the conductive film (grade 5B of ASTM specification D2259). However, the resistivity of the conductive film is too high to be measured.
硬化劑不是胺,所以推測粒子膜中之硬化劑未與甲酸反應且硬化之環氧樹脂殘留在導電膜之全體中,導電膜之表層部的電阻率不低。 The hardener is not an amine, so it is speculated that the hardener in the particle film did not react with formic acid and the hardened epoxy resin remained in the entire conductive film, and the resistivity of the surface layer of the conductive film was not low.
[實施例23] [Example 23]
在前述第一實施形態之實施例1至9中,分散劑係具有氮原子(第二周期之氮族元素)的高分子化合物。將具有磷原子(第三周期之氮族元素)的高分子化合物用於分散劑來進行同樣之實驗,作為第一實施形態之實施例。 In Examples 1 to 9 of the aforementioned first embodiment, the dispersant is a polymer compound having nitrogen atoms (a nitrogen group element of the second period). The same experiment is conducted using a polymer compound having phosphorus atoms (a nitrogen group element of the third period) as a dispersant as an example of the first embodiment.
分散劑係與實施例10相同之磷酸聚酯且其濃度係1.5質量%。除此以外之實驗條件(分散媒、銅奈米粒子之濃度、環氧樹脂及其濃度、硬化劑及其濃度、燒製溫度等)與實施例1相同。 The dispersant is the same phosphate polyester as in Example 10 and its concentration is 1.5% by mass. Other experimental conditions (dispersant, concentration of copper nanoparticles, epoxy resin and its concentration, hardener and its concentration, firing temperature, etc.) are the same as in Example 1.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中沒有剝離之塊,顯示優異之密接性(ASTM規格D2259之等級5B)。導電膜之電阻率係2.0×10-4Ω.cm且係與實施例1同樣之低值。 After firing, a conductive film was formed. In the tape peeling test of the conductive film, there was no peeling block, showing excellent adhesion (grade 5B of ASTM specification D2259). The resistivity of the conductive film was 2.0×10 -4 Ω. cm, which is the same low value as Example 1.
[實施例24] [Example 24]
在第一實施形態之實施例1至9、23中,分散媒係環己酮(極性非質子性溶劑)。分散媒只要可使銅奈米粒子分散在其中且可溶解有機基質即可。在此,變更分散媒進行同樣之實驗,作為第一實施形態之實施例。 In Examples 1 to 9 and 23 of the first embodiment, the dispersion medium is cyclohexanone (polar aprotic solvent). The dispersion medium can be used as long as it can disperse the copper nanoparticles and dissolve the organic matrix. Here, the dispersion medium is changed to conduct the same experiment as an example of the first embodiment.
分散媒係環己烷。環己烷係無極性溶劑。除此以外之實驗條件(銅奈米粒子之濃度、分散劑及其濃度、環氧樹脂及其濃度、硬化劑及其濃度、燒製溫度等)與實施例1相同。 The dispersion medium is cyclohexane. Cyclohexane is a non-polar solvent. Other experimental conditions (copper nanoparticle concentration, dispersant and its concentration, epoxy resin and its concentration, hardener and its concentration, firing temperature, etc.) are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.0×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.0×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例25] [Example 25]
分散媒係乙酸丁酯。乙酸丁酯係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is butyl acetate. Butyl acetate is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.2×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.2×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例26] [Example 26]
分散媒係二乙基醚。二乙基醚係無極性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is diethyl ether. Diethyl ether is a non-polar solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.0×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.0×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例27] [Example 27]
分散媒係1,4-二烷。1,4-二烷係無極性溶劑。除此以外之實驗條件與實施例1相同。
Dispersing
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.5×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.5×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例28] [Implementation Example 28]
分散媒係甲苯。甲苯係無極性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is toluene. Toluene is a non-polar solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.3×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.3×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例29] [Example 29]
分散媒係庚烷。庚烷係無極性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is heptane. Heptane is a non-polar solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.2×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.2×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例30] [Example 30]
分散媒係正十四烷。正十四烷係無極性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is n-tetradecane. n-tetradecane is a non-polar solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係4.0×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 4.0×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例31] [Implementation Example 31]
分散媒係N,N-二甲基甲醯胺。N,N-二甲基甲醯胺係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is N,N-dimethylformamide. N,N-dimethylformamide is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.8×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.8×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例32] [Example 32]
分散媒係丙酮。丙酮係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is acetone. Acetone is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.1×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, level 5B. The resistivity of the conductive film was 3.1×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例33] [Implementation Example 33]
分散媒係丙二醇一甲基醚乙酸酯(PGMA)。丙二醇一甲基醚乙酸酯係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is propylene glycol monomethyl ether acetate (PGMA). Propylene glycol monomethyl ether acetate is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.7×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.7×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例34] [Implementation Example 34]
分散媒係丙二醇一甲基醚(PM)。丙二醇一甲基醚係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is propylene glycol monomethyl ether (PM). Propylene glycol monomethyl ether is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.2×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.2×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例35] [Implementation Example 35]
分散媒係四氫呋喃(THF)。四氫呋喃係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is tetrahydrofuran (THF). Tetrahydrofuran is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.9×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.9×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例36] [Example 36]
分散媒係α-萜品醇。α-萜品醇係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is α-terpineol. α-terpineol is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.5×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.5×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例37] [Example 37]
分散媒係N-甲基-2-吡咯啶酮(NMP)。N-甲基-2-吡咯啶酮係極性非質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is N-methyl-2-pyrrolidone (NMP). N-methyl-2-pyrrolidone is a polar aprotic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.7×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.7×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例38] [Implementation Example 38]
分散媒係異丙醇(2-丙醇)。異丙醇係極性質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is isopropyl alcohol (2-propanol). Isopropyl alcohol is a polar protic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.3×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.3×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
[實施例39] [Implementation Example 39]
分散媒係乙醇。乙醇係極性質子性溶劑。除此以外之實驗條件與實施例1相同。 The dispersion medium is ethanol. Ethanol is a polar protic solvent. Other experimental conditions are the same as those in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係3.5×10-5Ω.cm且係適用於電子器件之電磁屏蔽的低值。 After firing, a conductive film was formed. The adhesion of the conductive film was the same as that of Example 1, Grade 5B. The resistivity of the conductive film was 3.5×10 -5 Ω·cm, which is a low value suitable for electromagnetic shielding of electronic devices.
在變更分散媒之實施例24至39中,無極性溶劑、極性非質子性溶劑、極性溶劑都可使用作為分散媒。形成之導電膜都顯示優異之密接性(ASTM規格D2259之等級5B)。該等導電膜之電阻率(體積電阻率)係在3.0×10-5Ω.cm至4.0×10-5Ω.cm之範圍內且沒有大差異。這是因為分散媒在乾燥分散媒之液膜以形成粒子膜的乾燥步驟及燒製該粒子膜以形成導電膜的燒製步驟中蒸發的緣故。此外,不僅本發明之第一實施形態,第二實施形態亦具有同樣之乾燥步驟及燒製步驟。 In Examples 24 to 39 in which the dispersion medium is changed, non-polar solvents, polar aprotic solvents, and polar solvents can all be used as dispersion medium. The conductive films formed all show excellent adhesion (grade 5B of ASTM specification D2259). The resistivity (volume resistivity) of the conductive films is in the range of 3.0×10 -5 Ω. cm to 4.0×10 -5 Ω. cm and there is no great difference. This is because the dispersion medium evaporates in the drying step of drying the liquid film of the dispersion medium to form a particle film and in the firing step of firing the particle film to form a conductive film. In addition, not only the first embodiment of the present invention, but also the second embodiment has the same drying step and firing step.
在實施例1至39中,燒製溫度係150℃。為了調查燒製溫度之影響,變更燒製溫度進行同樣之實驗,作為第一實施形態的實施例。 In Examples 1 to 39, the firing temperature is 150°C. In order to investigate the effect of the firing temperature, the same experiment was performed with the firing temperature changed as an example of the first embodiment.
[實施例40] [Example 40]
燒製溫度係比實施例1之150℃高之200℃。除此以外之實驗條件(分散媒、銅奈米粒子之濃度、分散劑及其濃度、環氧樹脂及其濃度、硬化劑及其濃度等)與實施例1相同。 The firing temperature is 200°C, which is higher than 150°C in Example 1. Other experimental conditions (dispersant, concentration of copper nanoparticles, dispersant and its concentration, epoxy resin and its concentration, hardener and its concentration, etc.) are the same as in Example 1.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係比實施例1低之2.0×10-5Ω.cm。 After firing, a conductive film was formed. The adhesiveness of the conductive film was the same as that of Example 1, which was Grade 5B. The resistivity of the conductive film was lower than that of Example 1, which was 2.0×10 -5 Ω·cm.
[實施例41] [Example 41]
燒製溫度係比實施例40更高之250℃。除此以外之實驗條件(分散媒、銅奈米粒子之濃度、分散劑及其濃度、環氧樹脂及其濃度、硬化劑及其濃度等)與實施例40相同。 The firing temperature is 250°C, which is higher than that of Example 40. Other experimental conditions (dispersant, concentration of copper nanoparticles, dispersant and its concentration, epoxy resin and its concentration, hardener and its concentration, etc.) are the same as those of Example 40.
燒製後,形成導電膜。導電膜之密接性係與實施例1相同之等級5B。導電膜之電阻率係比實施例40更低之1.2×10-5Ω.cm。 After firing, a conductive film was formed. The adhesiveness of the conductive film was the same level 5B as that of Example 1. The resistivity of the conductive film was 1.2×10 -5 Ω·cm, which was lower than that of Example 40.
將實施例1(燒製溫度150℃、電阻率2.0×10-4Ω.cm)、實施例40(燒製溫度200℃、電阻率2.0×10-5Ω.cm)、實施例41(燒製溫度250℃、電阻率1.2×10-5Ω.cm)進行比較可知,燒製溫度越高,形成之導電膜的電阻率越低。但是,高燒製溫度有對目標物(電子器件)熱影響之虞。燒製溫度最好考慮形成導電膜之目標物的耐熱性來設定。 Comparison of Example 1 (firing temperature 150°C, resistivity 2.0×10 -4 Ω·cm), Example 40 (firing temperature 200°C, resistivity 2.0×10 -5 Ω·cm), and Example 41 (firing temperature 250°C, resistivity 1.2×10 -5 Ω·cm) shows that the higher the firing temperature, the lower the resistivity of the conductive film formed. However, a high firing temperature may have a thermal effect on the target object (electronic device). The firing temperature is preferably set in consideration of the heat resistance of the target object for forming the conductive film.
(比較例4) (Comparative example 4)
燒製步驟中之加熱溫度設為比實施例1之燒製溫度150℃低的100℃。100℃與水之沸點相同。除此以外之實驗條件(分散媒、銅奈米粒子之濃度、分散劑及其濃度、環氧樹脂及其濃度、硬化劑及其濃度等)與實施例1相同。 The heating temperature in the firing step is set to 100°C, which is lower than the firing temperature of 150°C in Example 1. 100°C is the same as the boiling point of water. Other experimental conditions (dispersant, concentration of copper nanoparticles, dispersant and its concentration, epoxy resin and its concentration, hardener and its concentration, etc.) are the same as in Example 1.
燒製後,形成導電膜。在導電膜之膠帶剝離試驗中剝離之塊係ASTM規格D2259之等級0B。等級0B係剝離之塊超過65%。導電膜之電阻率係比實施例高大約1位數之2.5×10-3Ω.cm。即,使加熱溫度低至難謂為燒製溫度的程度時,即使形成導電膜,亦得不到導電膜之密接性且導電膜之電阻率高。 After firing, a conductive film is formed. In the tape peeling test of the conductive film, the peeled pieces are grade 0B of ASTM specification D2259. Grade 0B means that the peeled pieces exceed 65%. The resistivity of the conductive film is 2.5×10 -3 Ω·cm, which is about one digit higher than that of the embodiment. That is, when the heating temperature is lowered to a level that can hardly be called the firing temperature, even if a conductive film is formed, the adhesion of the conductive film cannot be obtained and the resistivity of the conductive film is high.
此外,本發明不限於上述實施形態之結構,在不變更發明主旨之範圍內可有各種變形。例如,在導電膜形成方法中,可不將目標物2放置在作業面3上而用工具等保持目標物2之底部及導線等。此外,目標物2不限於電子器件。另外,可在目標物2之底面上形成導電膜1。
In addition, the present invention is not limited to the structure of the above-mentioned embodiment, and various modifications are possible without changing the scope of the invention. For example, in the conductive film forming method, the
1:導電膜 1: Conductive film
2:目標物 2: Target object
3:作業面 3: Working surface
4:液膜 4: Liquid film
5:粒子膜 5: Particle film
21:頂面 21: Top
22:側面 22:Side
23:底面 23: Bottom
Claims (6)
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|---|---|---|---|---|
| TW200910382A (en) * | 2007-04-17 | 2009-03-01 | Nat Starch Chem Invest | Corrosion-resistant anisotropic conductive compositions |
| TW201215657A (en) * | 2010-10-06 | 2012-04-16 | Asahi Glass Co Ltd | Electrically conductive copper particles, process for producing electrically conductive copper particles, composition for forming electrically conductive body, and base having electrically conductive body attached thereto |
| JP2013175559A (en) * | 2012-02-24 | 2013-09-05 | Hitachi Chemical Co Ltd | Composite layer composed of adhesive layer and wiring layer and adhesive layer forming ink for printing for forming the same |
| TW201533534A (en) * | 2014-02-12 | 2015-09-01 | Toray Industries | Conductive paste, method for producing pattern, method for producing conductive pattern and sensor |
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| JP2010146734A (en) * | 2008-12-16 | 2010-07-01 | Toray Ind Inc | Method of manufacturing copper film |
| JP6681114B2 (en) * | 2018-09-11 | 2020-04-15 | 石原ケミカル株式会社 | Method of manufacturing conductive circuit and conductive circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200910382A (en) * | 2007-04-17 | 2009-03-01 | Nat Starch Chem Invest | Corrosion-resistant anisotropic conductive compositions |
| TW201215657A (en) * | 2010-10-06 | 2012-04-16 | Asahi Glass Co Ltd | Electrically conductive copper particles, process for producing electrically conductive copper particles, composition for forming electrically conductive body, and base having electrically conductive body attached thereto |
| JP2013175559A (en) * | 2012-02-24 | 2013-09-05 | Hitachi Chemical Co Ltd | Composite layer composed of adhesive layer and wiring layer and adhesive layer forming ink for printing for forming the same |
| TW201533534A (en) * | 2014-02-12 | 2015-09-01 | Toray Industries | Conductive paste, method for producing pattern, method for producing conductive pattern and sensor |
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| TW202433502A (en) | 2024-08-16 |
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