TWI886986B - Potential conversion circuit, source drive circuit, display and information processing device - Google Patents
Potential conversion circuit, source drive circuit, display and information processing device Download PDFInfo
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Abstract
一種電位轉換電路,具有:一位元電位轉換模組,具有一對低側反相電路及一對高側閂鎖式主動負載以對一正輸入信號和一負輸入信號進行一電位轉換操作,該對低側反相電路及該對高側閂鎖式主動負載之間具有一正輸出節點及一負輸出節點,且該電位轉換電路之特徵在於:在該電位轉換操作中,利用一第一高側致能信號控制一對第一開關以暫時斷開該對低側反相電路與該對高側閂鎖式主動負載之間的電流路徑,以及利用一第二高側致能信號控制一對第二開關以使該正輸出節點及該負輸出節點的電位均預充至一正供應電壓;一資料變動偵測模組,用以對一顯示資料之當前行期間和前一行期間的內容進行一比較運算以產生一比較結果,並依該比較結果產生一第一致能輸出信號及一第二致能輸出信號,其中,在該比較結果為不符合時,該第一致能輸出信號及該第二致能輸出信號皆呈現作用狀態,以及在該比較結果為符合時,該第一致能輸出信號及該第二致能輸出信號皆呈現不作用狀態;以及一升壓電路,耦接該位元電位轉換模組及該位元電位轉換模組,用以將該第一致能輸出信號及該第二致能輸出信號對應升壓成該第一高側致能信號及該第二高側致能信號。A potential conversion circuit has: a bit potential conversion module, a pair of low-side inverter circuits and a pair of high-side latched active loads to perform a potential conversion operation on a positive input signal and a negative input signal, a positive output node and a negative output node are provided between the pair of low-side inverter circuits and the pair of high-side latched active loads, and the potential conversion circuit has a characteristic The invention is characterized in that: in the potential conversion operation, a first high-side enabling signal is used to control a pair of first switches to temporarily disconnect the current path between the pair of low-side inverter circuits and the pair of high-side latched active loads, and a second high-side enabling signal is used to control a pair of second switches so that the potentials of the positive output node and the negative output node are precharged to a positive supply voltage; a source A material change detection module is used to perform a comparison operation on the content of a current row period and a previous row period of a display data to generate a comparison result, and generate a first enable output signal and a second enable output signal according to the comparison result, wherein when the comparison result is inconsistent, the first enable output signal and the second enable output signal are both in an active state, and when the comparison result is consistent, the first enable output signal and the second enable output signal are both in an inactive state; and a boost circuit is coupled to the bit potential conversion module and the bit potential conversion module, and is used to correspondingly boost the first enable output signal and the second enable output signal into the first high-side enable signal and the second high-side enable signal.
Description
本發明係有關顯示器驅動電路,尤指一種源極驅動器之電位轉換電路。 The present invention relates to a display driver circuit, and in particular to a potential conversion circuit of a source driver.
隨著市場需求的演變,顯示器的應用產品已從電視、筆電、手機、手錶擴展到VR(虛擬實像)眼鏡及AR(擴增實像)眼鏡,而在VR(虛擬實像)眼鏡及AR(擴增實像)眼鏡的高解析顯示應用中,由於電路板的面積有限,顯示器的源極驅動電路不能靠多顆驅動晶片串接而必須在單顆驅動晶片裡提供高數目的輸出通道來滿足高解析度的顯示需求。 With the evolution of market demand, the application products of displays have expanded from TVs, laptops, mobile phones, and watches to VR (virtual reality) glasses and AR (augmented reality) glasses. In the high-resolution display applications of VR (virtual reality) glasses and AR (augmented reality) glasses, due to the limited area of the circuit board, the source driver circuit of the display cannot rely on multiple driver chips connected in series, but must provide a large number of output channels in a single driver chip to meet the high-resolution display requirements.
請參照圖1,其為一現有源極驅動晶片之一輸出通道之方塊圖。如圖1所示,該輸出通道具有一移位暫存器10、一電位轉換電路20、一數位至類比轉換電路30及一緩衝放大器40,其中,移位暫存器10係用以儲存以序列方式輸入之一顯示資料DIN並以並列的格式輸出該顯示資料DIN;電位轉換電路20係用以提高該顯示資料DIN的邏輯準位以輸出一對應的數位信號;數位至類比轉換電路30係用以依該對應的數位信號產生一類比電壓;以及緩衝放大器40係用以依該類比電壓產生一輸出電壓VOUT以驅動一顯示器。
Please refer to FIG1, which is a block diagram of an output channel of a conventional active-source driver chip. As shown in FIG1, the output channel has a
請參照圖2,其繪示圖1之電位轉換電路20中之各位元電位轉換電路之電路圖。如圖2所示,所述之位元電位轉換電路係耦接於一高側正供應電壓
AVDD與一參考地之間,且具有一對主動負載(由一PMOS電晶體21a和一PMOS電晶體21b組成)、一閂鎖電路(由一PMOS電晶體22a和一PMOS電晶體22b組成)、一對疊接負載(由一NMOS電晶體23a和一NMOS電晶體23b組成)以及一對反相器(由一NMOS電晶體24a和一NMOS電晶體24b組成),其中,PMOS電晶體21a之閘極和PMOS電晶體21b之閘極共同耦接一第一直流電壓VBP,NMOS電晶體23a之閘極和NMOS電晶體23b之閘極共同耦接一第二直流電壓VBN,NMOS電晶體24a之閘極耦接一正輸入信號VIP,NMOS電晶體24b之閘極耦接一負輸入信號VIN,且NMOS電晶體24a之源極和NMOS電晶體24b之源極耦接至一接地節點GND,接地節點GND再經由一導電路徑連接至該參考地。於操作時,當正輸入信號VIP為邏輯1,節點QB的電位會被拉低,致使PMOS電晶體22b導通而將節點Q的電位拉高;當負輸入信號VIN為邏輯1,節點Q的電位會被拉低,致使PMOS電晶體22a導通而將節點QB的電位拉高。
Please refer to FIG. 2, which shows a circuit diagram of each bit potential conversion circuit in the
為提升位元電位轉換電路之反應速度,本領域已有在節點Q與正供應電壓VDD之間及節點QB與正供應電壓VDD之間各增設一預充開關的設計,用以在正輸入信號VIP和負輸入信號VIN到達之前先進行一預充操作以使節點Q和節點QB預充至一高電位。 In order to improve the response speed of the bit potential conversion circuit, the art has added a precharge switch design between the node Q and the positive supply voltage VDD and between the node QB and the positive supply voltage VDD, so as to perform a precharge operation before the positive input signal VIP and the negative input signal VIN arrive to precharge the node Q and the node QB to a high potential.
然而,上述的預充操作只有在前、後行的顯示資料DIN不同時才有效果,當前、後行的顯示資料DIN相同時,上述的預充操作卻是多餘的操作而浪費電能。 However, the above pre-charging operation is effective only when the display data DIN of the previous and next rows are different. When the display data DIN of the previous and next rows are the same, the above pre-charging operation is a redundant operation and wastes power.
為解決上述的問題,本領域亟需一種新穎的電位轉換電路。 In order to solve the above problems, this field urgently needs a novel potential conversion circuit.
本發明之主要目的在於提供一種電位轉換電路,其可在一電位轉換操作的過程中,依前、後行的像素顯示資料之比對結果決定是否執行預充操作,從而既可提升電位轉換電路之反應速度,又能免除不必要的動態功耗。 The main purpose of the present invention is to provide a potential conversion circuit that can determine whether to perform a pre-charge operation based on the comparison results of the pixel display data of the previous and next rows during a potential conversion operation, thereby improving the response speed of the potential conversion circuit and avoiding unnecessary dynamic power consumption.
本發明之另一目的在於提供一種源極驅動電路,其可藉由前述的電位轉換電路既提升其輸出通道之反應速度又免除不必要的動態功耗。 Another purpose of the present invention is to provide a source drive circuit that can improve the response speed of its output channel and eliminate unnecessary dynamic power consumption through the aforementioned potential conversion circuit.
本發明之另一目的在於提供一種顯示器,其可藉由前述的源極驅動電路既提升其動態畫面之顯示效果又免除不必要的動態功耗。 Another purpose of the present invention is to provide a display device that can improve the display effect of dynamic images and avoid unnecessary dynamic power consumption through the aforementioned source drive circuit.
本發明之又一目的在於提供一種資訊處理裝置,其可藉由前述的顯示器既提升其動態畫面之顯示效果又免除不必要的動態功耗。 Another purpose of the present invention is to provide an information processing device that can improve the display effect of dynamic images and avoid unnecessary dynamic power consumption through the aforementioned display.
為達上述目的,一種電位轉換電路乃被提出,其具有:一位元電位轉換模組,具有一對低側反相電路及一對高側閂鎖式主動負載以對一正輸入信號和一負輸入信號進行一電位轉換操作,該對低側反相電路及該對高側閂鎖式主動負載之間具有一正輸出節點及一負輸出節點,且該電位轉換電路之特徵在於:在該電位轉換操作中,利用一第一高側致能信號控制一對第一開關以暫時斷開該對低側反相電路與該對高側閂鎖式主動負載之間的電流路徑,以及利用一第二高側致能信號控制一對第二開關以使該正輸出節點及該負輸出節點的電位均預充至一正供應電壓;一資料變動偵測模組,用以對一顯示資料之當前行期間和前一行期間的內容進行一比較運算以產生一比較結果,並依該比較結果產生一第一致能輸出信號及一第二致能輸出信號,其中,在該比較結果為不符合時,該第一致能輸出 信號及該第二致能輸出信號皆呈現作用狀態,以及在該比較結果為符合時,該第一致能輸出信號及該第二致能輸出信號皆呈現不作用狀態;以及一升壓電路,耦接該位元電位轉換模組及該位元電位轉換模組,用以將該第一致能輸出信號及該第二致能輸出信號對應升壓成該第一高側致能信號及該第二高側致能信號。 To achieve the above object, a potential conversion circuit is proposed, which has: a bit potential conversion module, having a pair of low-side inverter circuits and a pair of high-side latched active loads to perform a potential conversion operation on a positive input signal and a negative input signal, a positive output node and a negative output node between the pair of low-side inverter circuits and the pair of high-side latched active loads, and the The potential conversion circuit is characterized in that: in the potential conversion operation, a first high-side enable signal is used to control a pair of first switches to temporarily disconnect the current path between the pair of low-side inverter circuits and the pair of high-side latched active loads, and a second high-side enable signal is used to control a pair of second switches so that the potentials of the positive output node and the negative output node are precharged to a positive supply node. voltage; a data change detection module for performing a comparison operation on the content of a current row period and a previous row period of a display data to generate a comparison result, and generating a first enabling output signal and a second enabling output signal according to the comparison result, wherein, when the comparison result is inconsistent, the first enabling output signal and the second enabling output signal are both effective state, and when the comparison result is consistent, the first enable output signal and the second enable output signal are both in an inactive state; and a boost circuit, coupled to the bit potential conversion module and the bit potential conversion module, for correspondingly boosting the first enable output signal and the second enable output signal into the first high-side enable signal and the second high-side enable signal.
在一實施例中,該顯示資料係由一時序控制單元提供。 In one embodiment, the display data is provided by a timing control unit.
在一實施例中,該正輸入信號和該負輸入信號係由一移位暫存器提供,且該移位暫存器係依該時序控制單元所提供之該顯示資料產生該正輸入信號和該負輸入信號。 In one embodiment, the positive input signal and the negative input signal are provided by a shift register, and the shift register generates the positive input signal and the negative input signal according to the display data provided by the timing control unit.
為達上述目的,本發明進一步提出一種源極驅動電路,其具有多個輸出通道,各該輸出通道均具有一電位轉換電路,且該電位轉換電路具有:一位元電位轉換模組,具有一對低側反相電路及一對高側閂鎖式主動負載以對一正輸入信號和一負輸入信號進行一電位轉換操作,該對低側反相電路及該對高側閂鎖式主動負載之間具有一正輸出節點及一負輸出節點,且該電位轉換電路之特徵在於:在該電位轉換操作中,利用一第一高側致能信號控制一對第一開關以暫時斷開該對低側反相電路與該對高側閂鎖式主動負載之間的電流路徑,以及利用一第二高側致能信號控制一對第二開關以使該正輸出節點及該負輸出節點的電位均預充至一正供應電壓;一資料變動偵測模組,用以對一顯示資料之當前行期間和前一行期間的內容進行一比較運算以產生一比較結果,並依該比較結果產生一第一致能輸出信號及一第二致能輸出信號,其中,在該比較結果為不符合時,該第一致能輸出 信號及該第二致能輸出信號皆呈現作用狀態,以及在該比較結果為符合時,該第一致能輸出信號及該第二致能輸出信號皆呈現不作用狀態。 To achieve the above object, the present invention further proposes a source drive circuit having a plurality of output channels, each of which has a potential conversion circuit, and the potential conversion circuit has: a bit potential conversion module having a pair of low-side inverter circuits and a pair of high-side latched active loads to perform a positive input signal and a negative input signal. A potential conversion operation is performed, wherein a positive output node and a negative output node are provided between the pair of low-side inverter circuits and the pair of high-side latched active loads, and the potential conversion circuit is characterized in that: in the potential conversion operation, a first high-side enabling signal is used to control a pair of first switches to temporarily disconnect the pair of low-side inverter circuits and the pair of high-side latched active loads. A current path between a positive output node and a load, and a second high-side enable signal is used to control a pair of second switches so that the potentials of the positive output node and the negative output node are precharged to a positive supply voltage; a data change detection module is used to perform a comparison operation on the content of a current row period and a previous row period of a display data to generate a comparison result, and generate a first enable output signal and a second enable output signal according to the comparison result, wherein, when the comparison result is inconsistent, the first enable output signal and the second enable output signal are both in an active state, and when the comparison result is consistent, the first enable output signal and the second enable output signal are both in an inactive state.
在一實施例中,和該顯示資料係由一時序控制單元提供。 In one embodiment, and the display data are provided by a timing control unit.
在一實施例中,該正輸入信號和該負輸入信號係由一移位暫存器提供,且該移位暫存器係依該時序控制單元所提供之該顯示資料產生該正輸入信號和該負輸入信號。 In one embodiment, the positive input signal and the negative input signal are provided by a shift register, and the shift register generates the positive input signal and the negative input signal according to the display data provided by the timing control unit.
為達上述目的,本發明進一步提出一種顯示器,其包含一顯示面板及用以驅動該顯示面板之如前述之源極驅動電路。 To achieve the above-mentioned purpose, the present invention further proposes a display device, which includes a display panel and a source driving circuit as described above for driving the display panel.
在可能的實施例中,該顯示器可為液晶顯示器、次毫米二極體發光顯示器、微米二極體發光顯示器、量子點二極體發光顯示器或有機發光二極體顯示器。 In a possible embodiment, the display may be a liquid crystal display, a sub-millimeter diode light-emitting display, a micron diode light-emitting display, a quantum dot diode light-emitting display or an organic light-emitting diode display.
為達上述目的,本發明進一步提出一種資訊處理裝置,其具有一中央處理器及如前述之顯示器,其中,該中央處理器係用以與該顯示器通信。 To achieve the above-mentioned purpose, the present invention further proposes an information processing device having a central processing unit and a display as described above, wherein the central processing unit is used to communicate with the display.
在可能的實施例中,該資訊處理裝置可為攜帶型電腦、車用電腦、智慧型手錶、智慧型手環、智慧型手機、VR眼鏡或AR眼鏡。 In a possible embodiment, the information processing device may be a portable computer, a car computer, a smart watch, a smart bracelet, a smart phone, a VR glasses or an AR glasses.
為使 貴審查委員能進一步瞭解本發明之結構、特徵、目的、與其優點,茲附以圖式及較佳具體實施例之詳細說明如後。 In order to enable the review committee to further understand the structure, features, purpose, and advantages of the present invention, the detailed description of the drawings and preferred specific embodiments is attached as follows.
10:移位暫存器 10: Shift register
20:電位轉換電路 20: Potential conversion circuit
21a:PMOS電晶體 21a: PMOS transistor
21b:PMOS電晶體 21b: PMOS transistor
22a:PMOS電晶體 22a: PMOS transistor
22b:PMOS電晶體 22b: PMOS transistor
23a:NMOS電晶體 23a:NMOS transistor
23b:NMOS電晶體 23b:NMOS transistor
24a:NMOS電晶體 24a:NMOS transistor
24b:NMOS電晶體 24b:NMOS transistor
30:數位至類比轉換電路 30: Digital to analog conversion circuit
40:緩衝放大器 40: Buffer amplifier
100:電位轉換電路 100: Potential conversion circuit
101a:PMOS電晶體 101a:PMOS transistor
101b:PMOS電晶體 101b:PMOS transistor
102a:PMOS電晶體 102a: PMOS transistor
102b:PMOS電晶體 102b:PMOS transistor
103a:NMOS電晶體 103a:NMOS transistor
103b:NMOS電晶體 103b:NMOS transistor
104a:NMOS電晶體 104a:NMOS transistor
104b:NMOS電晶體 104b:NMOS transistor
105a:NMOS電晶體 105a:NMOS transistor
105b:NMOS電晶體 105b:NMOS transistor
106a:PMOS電晶體 106a:PMOS transistor
106b:PMOS電晶體 106b:PMOS transistor
107:資料變動偵測模組 107: Data change detection module
107a:第一閂鎖器 107a: First latch
107b:第二閂鎖器 107b: Second latch
107c:第三閂鎖器 107c: Third latch
107d:互斥或閘 107d: Mutex or gate
107e:第一反相器 107e: First inverter
107f:第二反相器 107f: Second inverter
107g:第一或閘 107g: First or gate
107h:第二或閘 107h: Second or gate
108:升壓電路 108:Boost circuit
110:時序控制單元 110: Timing control unit
120:移位暫存器 120: Shift register
200:顯示器 200: Display
210:顯示面板 210: Display panel
220:源極驅動電路 220: Source drive circuit
221:輸出通道 221: Output channel
300:資訊處理裝置 300: Information processing device
310:中央處理器 310: Central Processing Unit
320:顯示器 320: Display
圖1為為一現有源極驅動晶片之一輸出通道之方塊圖;圖2繪示圖1之電位轉換電路之電路圖; 圖3繪示本發明之電位轉換電路之一實施例之電路圖;圖4繪示圖3之電位轉換電路之資料變動偵測模組之一實施例之電路圖;圖5繪示圖4之資料變動偵測模組之一工作時序圖;圖4繪示圖3之電位轉換電路之電位轉換操作之一時序圖;圖6為在顯示資料之當前行期間和前一行期間的內容有變動的情況下,圖3之電位轉換電路之位元電位轉換模組之電位轉換操作之時序圖;圖7繪示本發明之顯示器之一實施例之方塊圖;以及圖8繪示本發明之資訊處理裝置之一實施例之方塊圖。 FIG1 is a block diagram of an output channel of an existing active-electrode driver chip; FIG2 is a circuit diagram of the potential conversion circuit of FIG1; FIG3 is a circuit diagram of an embodiment of the potential conversion circuit of the present invention; FIG4 is a circuit diagram of an embodiment of the data change detection module of the potential conversion circuit of FIG3; FIG5 is a working timing diagram of the data change detection module of FIG4; FIG4 is a circuit diagram of FIG3 FIG. 6 is a timing diagram of the potential conversion operation of the potential conversion circuit of FIG. 3 when the content of the current row period and the previous row period of the display data changes; FIG. 7 is a block diagram of an embodiment of the display of the present invention; and FIG. 8 is a block diagram of an embodiment of the information processing device of the present invention.
請參照圖3,其繪示本發明之電位轉換電路之一實施例之電路圖。 Please refer to Figure 3, which shows a circuit diagram of an embodiment of the potential conversion circuit of the present invention.
如圖3所示,一電位轉換電路100具有一位元電位轉換模組、一資料變動偵測模組107及一升壓電路108,其中,該位元電位轉換模組係耦接於一高側正供應電壓AVDD與一參考地之間以對一正輸入信號VIP及一負輸入信號VIN進行一電位轉換操作;資料變動偵測模組107係耦接於一低側正供應電壓VDD與該參考地之間,且升壓電路108係耦接於該高側正供應電壓AVDD與一高側負供應電壓AVSS之間;以及正輸入信號VIP及負輸入信號VIN係由一移位暫存器120提供,且係依時序控制單元110所提供之一顯示資料DIN之二進制值產生。事實上,雖然在圖3中只繪示了一個位元電位轉換模組,由於顯示資料DIN會有多個位元,因此電位轉換電路100會包含多個位元電位轉換模組。
As shown in FIG. 3 , a
另外,時序控制單元110除了提供顯示資料DIN,還提供一第一致能信號EN1、一第二致能信號EN2、N個取樣脈衝信號SAM[1]~SAM[N]、一當前行資料閂鎖信號LD及一先前行資料閂鎖信號LD1,N為大於1之正整數。
In addition, in addition to providing display data DIN, the
資料變動偵測模組107係依SAM[j]、LD、LD1之控制閂鎖顯示資料DIN之當前行期間和前一行期間的內容,j為1至N中之一整數,並依顯示資料DIN在該二期間之內容的比較結果決定是否使一第一致能輸出信號EN1O及一第二致能輸出信號EN2O對應輸出第一致能信號EN1和第二致能信號EN2之作用狀態(在此實施例中該作用狀態為邏輯0)。詳細而言,當該二期間之內容的比較結果為不符合時,第一致能輸出信號EN1O及第二致能輸出信號EN2O皆呈現邏輯0電位;當該二期間之內容的比較結果為符合時,第一致能輸出信號EN1O及第二致能輸出信號EN2O皆呈現邏輯1電位。
The data change
請參照圖4,其繪示圖3之電位轉換電路100之資料變動偵測模組107之一實施例之電路圖。如圖4所示,資料變動偵測模組107具有一第一閂鎖器107a、一第二閂鎖器107b、一第三閂鎖器107c、一互斥或閘107d、一第一反相器107e、一第二反相器107f、一第一或閘107g及一第二或閘107h。
Please refer to FIG. 4, which shows a circuit diagram of an embodiment of the data
第一閂鎖器107a係依取樣脈衝信號SAM[j]之控制閂鎖顯示資料DIN之內容。
The
第二閂鎖器107b係依當前行資料閂鎖信號LD之控制閂鎖第一閂鎖器107a之輸出內容D1以獲得一當前資料D2(T)。
The
第三閂鎖器107c係依先前行資料閂鎖信號LD1之控制閂鎖第一閂鎖器107a之輸出內容D1以獲得一先前資料D2(T-1),其中,先前行資料閂鎖信號LD1係落後當前行資料閂鎖信號LD一預定之短時間。
The
互斥或閘107d係用以對當前資料D2(T)和先前資料D2(T-1)進行一互斥或運算,當該二資料相同時,互斥或閘107d之輸出為0,當該二資料不同時,互斥或閘107d之輸出為1。
The exclusive OR
第一反相器107e係用以對互斥或閘107d之輸出進行一反相運算;第二反相器107f係用以對互斥或閘107d之輸出進行一反相運算。
The
第一或閘107g係用以對第一致能信號EN1及第一反相器107e之輸出進行一或運算以產生第一致能輸出信號EN1O;第二或閘107h係用以對第二致能信號EN2及第二反相器107f之輸出進行一或運算以產生第二致能輸出信號EN2O。
The first OR
請參照圖5,其繪示圖4之資料變動偵測模組107之一工作時序圖。如圖5所示,在水平掃描信號HSYNC之每二相鄰脈衝之間會有N個取樣脈衝信號SAM[1]~SAM[N]依次出現,N為大於1之整數;當前行資料閂鎖信號LD領先先前行資料閂鎖信號LD1一時間間隙,且在該時間間隙內EN1和EN2均為低電位。詳細而言,在該時間間隙內,第二閂鎖器107b已依當前行資料閂鎖信號LD之作用輸出當前資料,而第三閂鎖器107c因先前行資料閂鎖信號LD1尚未到達仍輸出先前資料,故此時互斥或閘107d對當前資料D2(T)和先前資料D2(T-1)所進行之互斥或運算的結果乃可用以屏蔽EN1和EN2。
Please refer to FIG5, which shows a working timing diagram of the data
回到圖3,升壓電路108係用以將低側之第一致能輸出信號EN1O及第二致能輸出信號EN2O之邏輯1電位提升至接近高側正供應電壓AVDD,並以一第一高側致能信號EN1H及一第二高側致能信號EN2H作為對應之高側輸出信號。
Returning to FIG. 3 , the
該位元電位轉換模組包含一對主動負載(由一PMOS電晶體101a和一PMOS電晶體101b組成)、一閂鎖電路(由一PMOS電晶體102a和一PMOS電晶體102b組成)、一對第一疊接負載(由一NMOS電晶體103a和一NMOS電晶體103b組成)、一對第二疊接負載(由一NMOS電晶體104a和一NMOS電晶體104b組成)、一對反相器(由一NMOS電晶體105a和一NMOS電晶體105b組成)及一對拉升開關(由一PMOS電晶體106a和一PMOS電晶體106b組成)。
The bit potential conversion module includes a pair of active loads (composed of a
在該對主動負載中,PMOS電晶體101a之源極和PMOS電晶體101b之源極共同耦接高側正供應電壓AVDD,PMOS電晶體101a之閘極和PMOS電晶體101b之閘極共同耦接一第一直流電壓VBP,PMOS電晶體101a之汲極耦接PMOS電晶體102a之源極,且PMOS電晶體101b之汲極耦接PMOS電晶體102b之源極。
In the pair of active loads, the source of the
在該閂鎖電路中,PMOS電晶體102a之源極耦接PMOS電晶體101a之汲極,閘極耦接正輸出節點Q,汲極耦接負輸出節點QB;PMOS電晶體102b之源極耦接PMOS電晶體101b之汲極,閘極耦接負輸出節點QB,汲極耦接正輸出節點Q。
In the latch circuit, the source of
在該對第一疊接負載中,NMOS電晶體103a之汲極耦接負輸出節點QB,閘極耦接第一高側致能信號EN1H,源極耦接NMOS電晶體104a之汲極;
NMOS電晶體103b之汲極耦接正輸出節點Q,閘極耦接第一高側致能信號EN1H,源極耦接NMOS電晶體104b之汲極。
In the pair of first cascaded loads, the drain of
在該對第二疊接負載中,NMOS電晶體104a之汲極耦接NMOS電晶體103a之源極,閘極耦接一第二直流電壓VBN,源極耦接NMOS電晶體105a之汲極;NMOS電晶體104b之汲極耦接NMOS電晶體103b之源極,閘極耦接第二直流電壓VBN,源極耦接NMOS電晶體105b之汲極。
In the pair of second cascade loads, the drain of
在該對反相器中,NMOS電晶體105a之汲極耦接NMOS電晶體104a之源極,閘極耦接正輸入信號VIP,源極耦接一接地節點GND,接地節點GND再經一導電路徑連接至該參考地;NMOS電晶體105b之汲極耦接NMOS電晶體104b之源極,閘極耦接負輸入信號VIN,源極耦接該接地節點GND。
In the pair of inverters, the drain of
在該對拉升開關中,PMOS電晶體106a之源極耦接高側正供應電壓AVDD,閘極耦接第二高側致能信號EN2H,汲極耦接負輸出節點QB;PMOS電晶體106b之源極耦接高側正供應電壓AVDD,閘極耦接第二高側致能信號EN2H,汲極耦接正輸出節點Q。
In the pair of pull-up switches, the source of the
請參照圖6,其為在顯示資料DIN之當前行期間和前一行期間的內容有變動的情況下,該位元電位轉換模組之電位轉換操作之時序圖。如圖4所示,該電位轉換操作之時序由先至後包括t1、t2、t3、t4、t5等5個時點。 Please refer to Figure 6, which is a timing diagram of the potential conversion operation of the bit potential conversion module when the content of the current row period and the previous row period of the display data DIN changes. As shown in Figure 4, the timing of the potential conversion operation includes 5 time points from t1, t2, t3, t4, and t5.
在第1個電位轉換操作中: In the first potential conversion operation:
在t1時點:第一高側致能信號EN1H由高電位變低電位,致使NMOS電晶體103a和NMOS電晶體103b被斷開;且第二高側致能信號EN2H維持高電位,致使PMOS電晶體106a和PMOS電晶體106b維持被斷開狀態。
At time t1: the first high-side enable signal EN1H changes from high to low, causing the
在t2時點:第一高側致能信號EN1H維持低電位,致使NMOS電晶體103a和NMOS電晶體103b維持被斷開狀態;且第二高側致能信號EN2H由高電位變低電位,致使PMOS電晶體106a和PMOS電晶體106b被導通而使節點Q和節點QB的電位被拉高至VDD。
At time t2: the first high-side enable signal EN1H maintains a low level, causing the
在t3時點:該位元電位轉換模組進入一顯示信號接收期間(在此電位轉換操作中,輸入信號VIP為高電位),第一高側致能信號EN1H維持低電位,致使NMOS電晶體103a和NMOS電晶體103b維持被斷開狀態;且第二高側致能信號EN2H維持低電位,致使PMOS電晶體106a和PMOS電晶體106b維持導通狀態而使節點Q和節點QB的電位維持在VDD。
At time t3: the bit potential conversion module enters a display signal receiving period (in this potential conversion operation, the input signal VIP is high), the first high-side enable signal EN1H maintains a low level, causing the
在t4時點:第一高側致能信號EN1H維持低電位,致使NMOS電晶體103a和NMOS電晶體103b維持被斷開狀態;且第二高側致能信號EN2H由低電位變高電位,致使PMOS電晶體106a和PMOS電晶體106b被斷開,此時節點Q和節點QB的電位維持在VDD。
At time t4: the first high-side enable signal EN1H maintains a low potential, causing the
在t5時點:第一高側致能信號EN1H由低電位變高電位,致使NMOS電晶體103a和NMOS電晶體103b被導通;且第二高側致能信號EN2H維持高電位,致使PMOS電晶體106a和PMOS電晶體106b維持被斷開狀態。此時,該位元電位轉換模組進入一電位轉換期間,節點Q的電位維持在VDD,而節點QB電位則由VDD被拉低至該參考地。
At time t5: the first high-side enable signal EN1H changes from low to high, causing
在第2個電位轉換操作中: In the second potential conversion operation:
在t1時點:第一高側致能信號EN1H由高電位變低電位,致使NMOS電晶體103a和NMOS電晶體103b被斷開;且第二高側致能信號EN2H維持高電位,致使PMOS電晶體106a和PMOS電晶體106b維持被斷開狀態。
At time t1: the first high-side enable signal EN1H changes from high to low, causing the
在t2時點:第一高側致能信號EN1H維持低電位,致使NMOS電晶體103a和NMOS電晶體103b維持被斷開狀態;且第二高側致能信號EN2H由高電位變低電位,致使PMOS電晶體106a和PMOS電晶體106b被導通而使節點Q和節點QB的電位被拉高至VDD。
At time t2: the first high-side enable signal EN1H maintains a low level, causing the
在t3時點:該位元電位轉換模組進入一顯示信號接收期間(在此電位轉換操作中,輸入信號VIP高電位變低電位),第一高側致能信號EN1H維持低電位,致使NMOS電晶體103a和NMOS電晶體103b維持被斷開狀態;且第二高側致能信號EN2H維持低電位,致使PMOS電晶體106a和PMOS電晶體106b維持導通狀態而使節點Q和節點QB的電位維持在VDD。
At time t3: the bit potential conversion module enters a display signal receiving period (in this potential conversion operation, the input signal VIP high potential changes to low potential), the first high-side enable signal EN1H maintains a low potential, causing the
在t4時點:第一高側致能信號EN1H維持低電位,致使NMOS電晶體103a和NMOS電晶體103b維持被斷開狀態;且第二高側致能信號EN2H由低電位變高電位,致使PMOS電晶體106a和PMOS電晶體106b被斷開,此時節點Q和節點QB的電位維持在VDD。
At time t4: the first high-side enable signal EN1H maintains a low potential, causing the
在t5時點:第一高側致能信號EN1H由低電位變高電位,致使NMOS電晶體103a和NMOS電晶體103b被導通;且第二高側致能信號EN2H維持高電位,致使PMOS電晶體106a和PMOS電晶體106b維持被斷開狀態。此時,該位元電位轉換模組進入一電位轉換期間,節點Q的電位由VDD被拉低至該參考地,而節點QB電位則維持在VDD。
At time t5: the first high-side enable signal EN1H changes from low to high, causing
依此,本發明即可在各個電位轉換操作中使NMOS電晶體105a和NMOS電晶體105b的通道電流都為0,從而在多個輸出通道同時操作時,有效避免該些輸出通道之瞬間電流的總和在接地節點GND與該參考地之間產生壓降(亦即在接地節點GND與該參考地之間的路徑電阻上產生一電壓),致使NMOS電晶體105a和NMOS電晶體105b無法正常操作,從而導致電位轉換電路100的輸出異常。
Accordingly, the present invention can make the channel current of
由上述的說明可知,本發明揭露了一種位元電位轉換模組,其具有一對低側反相電路及一對高側閂鎖式主動負載以對一正輸入信號和一負輸入信號進行一電位轉換操作,該對低側反相電路及該對高側閂鎖式主動負載之間具有一正輸出節點及一負輸出節點,且該位元電位轉換模組之特徵在於:在該電位轉換操作中,利用一對第一開關決定是否暫時斷開該對低側反相電路與該對高側閂鎖式主動負載之間的電流路徑,以及利用一對第二開關決定是否先使該正輸出節點及該負輸出節點的電位均預充至一正供應電壓,而其決定之依據係前、後行的像素顯示資料之比對結果。 As can be seen from the above description, the present invention discloses a bit potential conversion module, which has a pair of low-side inverter circuits and a pair of high-side latched active loads to perform a potential conversion operation on a positive input signal and a negative input signal, and there is a positive output node and a negative output node between the pair of low-side inverter circuits and the pair of high-side latched active loads, and the characteristics of the bit potential conversion module are In the potential conversion operation, a pair of first switches is used to determine whether to temporarily disconnect the current path between the pair of low-side inverter circuits and the pair of high-side latched active loads, and a pair of second switches is used to determine whether to pre-charge the potentials of the positive output node and the negative output node to a positive supply voltage, and the decision is based on the comparison results of the pixel display data of the previous and next rows.
另外,在本發明之位元電位轉換模組中,該第一致能信號和該第二致能信號係由一時序控制單元提供;該正輸入信號和該負輸入信號係由一移位暫存器提供,且該移位暫存器係依該時序控制單元所提供之一顯示資料產生該正輸入信號和該負輸入信號。 In addition, in the bit potential conversion module of the present invention, the first enable signal and the second enable signal are provided by a timing control unit; the positive input signal and the negative input signal are provided by a shift register, and the shift register generates the positive input signal and the negative input signal according to a display data provided by the timing control unit.
依上述的說明,本發明進一步提出一種顯示器。請參照圖7,其繪示本發明之顯示器之一實施例之方塊圖。如圖7所示,一顯示器200包含一顯示面板210及用以驅動顯示面板210之一源極驅動電路220,其中,源極驅動電路
220具有多個輸出通道221,各輸出通道221均具有一電位轉換電路,且該電位轉換電路係由電位轉換電路100實現。
According to the above description, the present invention further proposes a display. Please refer to FIG. 7, which shows a block diagram of an embodiment of the display of the present invention. As shown in FIG. 7, a
另外,顯示器200可為液晶顯示器、次毫米二極體發光顯示器、微米二極體發光顯示器、量子點二極體發光顯示器或有機發光二極體顯示器。
In addition, the
另外,依上述的說明,本發明進一步提出一種資訊處理裝置。請參照圖8,其繪示本發明之資訊處理裝置之一實施例之方塊圖。如圖8所示,一資訊處理裝置300具有一中央處理器310及一顯示器320,其中,顯示器320係由顯示器200實現且中央處理器310係用以與顯示器320通信。
In addition, according to the above description, the present invention further proposes an information processing device. Please refer to FIG. 8, which shows a block diagram of an embodiment of the information processing device of the present invention. As shown in FIG. 8, an
另外,資訊處理裝置300可為攜帶型電腦、車用電腦、智慧型手錶、智慧型手環、智慧型手機、VR眼鏡或AR眼鏡。
In addition, the
依上述的設計,本發明乃具有下列之優點: According to the above design, the present invention has the following advantages:
一、本發明之電位轉換電路可在一電位轉換操作的過程中,依前、後行的像素顯示資料之比對結果決定是否執行預充操作,從而既可提升電位轉換電路之反應速度,又能免除不必要的動態功耗; 1. The potential conversion circuit of the present invention can determine whether to perform a pre-charge operation according to the comparison results of the pixel display data of the previous and next rows during a potential conversion operation, thereby improving the response speed of the potential conversion circuit and eliminating unnecessary dynamic power consumption;
二、本發明之源極驅動電路可藉由前述的電位轉換電路既提升其輸出通道之反應速度又免除不必要的動態功耗; 2. The source drive circuit of the present invention can improve the response speed of its output channel and eliminate unnecessary dynamic power consumption through the aforementioned potential conversion circuit;
三、本發明之顯示器可藉由前述的源極驅動電路既提升其動態畫面之顯示效果又免除不必要的動態功耗;以及 3. The display of the present invention can improve the display effect of dynamic images and eliminate unnecessary dynamic power consumption through the aforementioned source drive circuit; and
四、本發明之資訊處理裝置可藉由前述的顯示器既提升其動態畫面之顯示效果又免除不必要的動態功耗。 4. The information processing device of the present invention can improve the display effect of dynamic images and eliminate unnecessary dynamic power consumption through the aforementioned display.
本案所揭示者,乃較佳實施例,舉凡局部之變更或修飾而源於本案之技術思想而為熟習該項技藝之人所易於推知者,俱不脫本案之專利權範疇。 What is disclosed in this case is a better embodiment. Any partial changes or modifications that are derived from the technical ideas of this case and are easily inferred by people familiar with the art do not deviate from the scope of the patent rights of this case.
綜上所陳,本案無論目的、手段與功效,皆顯示其迥異於習知技術,且其首先發明合於實用,確實符合發明之專利要件,懇請 貴審查委員明察,並早日賜予專利俾嘉惠社會,是為至禱。 In summary, this case shows that it is very different from the known technology in terms of purpose, means and effect, and it is the first invention that is practical and indeed meets the patent requirements for invention. We sincerely ask the review committee to examine it carefully and grant a patent as soon as possible to benefit the society. This is our utmost prayer.
100:電位轉換電路 100: Potential conversion circuit
101a:PMOS電晶體 101a:PMOS transistor
101b:PMOS電晶體 101b:PMOS transistor
102a:PMOS電晶體 102a: PMOS transistor
102b:PMOS電晶體 102b:PMOS transistor
103a:NMOS電晶體 103a:NMOS transistor
103b:NMOS電晶體 103b:NMOS transistor
104a:NMOS電晶體 104a:NMOS transistor
104b:NMOS電晶體 104b:NMOS transistor
105a:NMOS電晶體 105a:NMOS transistor
105b:NMOS電晶體 105b:NMOS transistor
106a:PMOS電晶體 106a:PMOS transistor
106b:PMOS電晶體 106b:PMOS transistor
107:資料變動偵測模組 107: Data change detection module
108:升壓電路 108:Boost circuit
110:時序控制單元 110: Timing control unit
120:移位暫存器 120: Shift register
Claims (11)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113120300A TWI886986B (en) | 2024-05-31 | 2024-05-31 | Potential conversion circuit, source drive circuit, display and information processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW113120300A TWI886986B (en) | 2024-05-31 | 2024-05-31 | Potential conversion circuit, source drive circuit, display and information processing device |
Publications (2)
| Publication Number | Publication Date |
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| TWI886986B true TWI886986B (en) | 2025-06-11 |
| TW202548703A TW202548703A (en) | 2025-12-16 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150310812A1 (en) * | 2014-04-23 | 2015-10-29 | Samsung Electronics Co., Ltd. | Source driver |
| TW201804450A (en) * | 2016-07-22 | 2018-02-01 | 友達光電股份有限公司 | Display device and data driver |
| TW202046273A (en) * | 2018-07-22 | 2020-12-16 | 聯詠科技股份有限公司 | Channel circuit of source driver and operation method thereof |
-
2024
- 2024-05-31 TW TW113120300A patent/TWI886986B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150310812A1 (en) * | 2014-04-23 | 2015-10-29 | Samsung Electronics Co., Ltd. | Source driver |
| TW201804450A (en) * | 2016-07-22 | 2018-02-01 | 友達光電股份有限公司 | Display device and data driver |
| TW202046273A (en) * | 2018-07-22 | 2020-12-16 | 聯詠科技股份有限公司 | Channel circuit of source driver and operation method thereof |
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