TWI885548B - Substrate processing apparatus, substrate processing method, and chamber cleaning method - Google Patents

Abstract

The present invention provides a substrate processing apparatus, a substrate processing method, and a chamber cleaning method. A substrate processing apparatus (100) includes a chamber (201), a blower (3), a substrate holding section (4), a substrate rotating section (5), a first mixed liquid ejection section (6), and a first superheated steam blowing section (31). Substrate processing is performed in the chamber (201). The blower (3) blows air into the chamber (201). The substrate holding section (4) holds a substrate (W) in the chamber (201). The substrate rotating section (5) rotates the substrate (W) held by the substrate holding section (4). The first mixed liquid ejection section (6) ejects a first mixed liquid (SPM) toward the substrate (W) under rotation by the substrate rotating section (5). The first mixed liquid (SPM) is obtained by mixing sulfuric acid and hydrogen peroxide. The first superheated steam blowing section (31) is located between the blower (3) and the substrate (W) held by the substrate holding section (4). The first superheated steam blowing section (31) blows superheated steam into the chamber (201).

Description

Substrate processing device, substrate processing method and chamber cleaning method

The present invention relates to a substrate processing device, a substrate processing method and a chamber cleaning method.

It is known that there is a single-chip substrate processing device that processes a substrate by spraying a chemical liquid from a nozzle onto the substrate. If the chemical liquid is sprayed from the nozzle, a chemical liquid atmosphere containing chemical liquid components is generated near the substrate. When the chemical liquid collides with the chuck pin or cup, a chemical liquid atmosphere is also generated near the substrate. In particular, when SPM (sulfuric acid and hydrogen peroxide mixture) above 100°C is sprayed from the nozzle, water contained in the SPM evaporates, and droplets or sprays of the SPM are sprayed from the nozzle. There are also cases where smoke (smoke-like gas) is generated from the substrate by the reaction between the SPM and the anti-etching agent.

Most of the liquid chemical atmosphere is sent into the cup by the downward flow of clean air formed in the chamber or the suction force of the exhaust equipment. However, some of the liquid chemical atmosphere diffuses to the space outside the cup and adheres to the substrate after drying. In addition, some of the liquid chemical atmosphere adheres to the components arranged above the substrate or the inner wall surface of the chamber. As a result, there is a risk of contamination of the substrate.

Patent document 1 discloses a substrate processing device that sprays water into a chamber to generate a spray in the chamber, so that the water particles contained in the spray are combined with the liquid medicine particles contained in the liquid medicine atmosphere. By combining the water particles with the liquid medicine particles, the liquid medicine particles are less likely to float, and as a result, the diffusion of the liquid medicine atmosphere is suppressed.

[Prior Art Literature]

[Patent Literature]

[Patent document 1] Japanese Patent Publication No. 2016-12629

However, when mist is generated in the chamber, the temperature of the substrate may be lowered due to the water contained in the mist, and the stripping efficiency of the SPM anti-etchant may be reduced. Therefore, there is room for further improvement in the technology to reduce substrate contamination caused by the chemical liquid atmosphere.

The present invention is completed in view of the above-mentioned problems, and its purpose is to provide a substrate processing device, substrate processing method and chamber cleaning method that can reduce substrate contamination caused by chemical liquid atmosphere.

According to one aspect of the present invention, a substrate processing device includes a chamber, an air supply mechanism, a substrate holding part, a substrate rotating part, a first mixed liquid spraying part, and a first superheated water vapor blowing part. Substrate processing is performed in the chamber. The air supply mechanism supplies air into the chamber. The substrate holding part holds a substrate in the chamber. The substrate rotating part rotates the substrate held on the substrate holding part. The first mixed liquid spraying part is in the chamber. The first mixed liquid spraying part sprays a first mixed liquid of sulfuric acid and hydrogen peroxide to the substrate rotated by the substrate rotating part. The first superheated water vapor blowing part is between the air supply mechanism and the substrate held on the substrate holding part. The first superheated water vapor blowing part blows superheated water vapor into the chamber.

In a certain embodiment, the substrate processing device further includes a control unit. The control unit controls the ejection of the first mixed liquid from the first mixed liquid ejection unit and the blowing of the superheated water vapor from the first superheated water vapor blowing unit. When the control unit ejects the first mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing unit.

In a certain embodiment, the substrate processing device further comprises a liquid receiving part and a second superheated water vapor blowing part. The liquid receiving part receives the first mixed liquid discharged from the substrate rotated by the substrate rotating part. The second superheated water vapor blowing part is supported by the liquid receiving part. The second superheated water vapor blowing part blows the superheated water vapor toward the substrate held by the substrate holding part.

In a certain embodiment, the control unit further controls the blowing of the superheated water vapor from the second superheated water vapor blowing unit and the rotation of the substrate in the substrate rotating unit. When spraying the first mixed liquid, the control unit controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate. The control unit stops spraying the first mixed liquid and controls the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate. When forming the immersed state, the control unit blows out the superheated water vapor from the first superheated water vapor blowing unit and the second superheated water vapor blowing unit.

In a certain embodiment, the second superheated water vapor blowing part includes an upper superheated water vapor blowing part and a lower superheated water vapor blowing part. The upper superheated water vapor blowing part blows the superheated water vapor toward the upper surface of the substrate held in the substrate holding part. The lower superheated water vapor blowing part blows the superheated water vapor toward the lower surface of the substrate held in the substrate holding part.

In a certain embodiment, the first mixed liquid spraying unit sprays the first mixed liquid and hydrogen peroxide mutually exclusively. The control unit further controls the spraying of the hydrogen peroxide from the first mixed liquid spraying unit. When the control unit sprays the hydrogen peroxide, it stops blowing the superheated water vapor.

In a certain embodiment, the first mixed liquid spraying unit sprays the first mixed liquid and hydrogen peroxide mutually exclusively. The control unit further controls the spraying of the hydrogen peroxide from the first mixed liquid spraying unit. When spraying the first mixed liquid, the control unit blows out the superheated water vapor at a first flow rate from the first superheated water vapor blowing unit. When spraying the hydrogen peroxide, the control unit blows out the superheated water vapor at a second flow rate less than the first flow rate from the first superheated water vapor blowing unit.

In a certain embodiment, the substrate processing device further includes a second mixed liquid spraying unit. The second mixed liquid spraying unit sprays a second mixed liquid mixed with ammonia water, hydrogen peroxide water and pure water onto the substrate rotated by the substrate rotating unit. The control unit further controls the spraying of the second mixed liquid from the second mixed liquid spraying unit. The control unit blows out the superheated water vapor when spraying the second mixed liquid.

In a certain embodiment, the substrate processing device further includes a cleaning liquid spraying unit and a water vapor blowing unit. The cleaning liquid spraying unit sprays cleaning liquid onto the substrate rotated by the substrate rotating unit. The water vapor blowing unit is located between the air supply mechanism and the substrate held by the substrate holding unit. The water vapor blowing unit blows water vapor into the chamber. The control unit further controls the spraying of the cleaning liquid from the cleaning liquid spraying unit and the blowing of the water vapor from the water vapor blowing unit. The control unit blows out the water vapor when spraying the cleaning liquid.

In a certain embodiment, the control unit further controls the rotation of the substrate of the substrate rotating unit. After stopping the spraying of the cleaning liquid, the control unit performs a drying process. The drying process refers to a process of controlling the rotation speed of the substrate to remove the cleaning liquid from the upper surface of the substrate to dry the upper surface of the substrate. When performing the drying process, the control unit stops blowing the water vapor.

In a certain embodiment, the substrate processing device further includes a third superheated water vapor blowing unit and a water vapor blowing unit. The third superheated water vapor blowing unit blows out superheated water vapor toward the inner wall surface of the chamber. The water vapor blowing unit is located between the air supply mechanism and the substrate holding unit. The water vapor blowing unit blows out water vapor into the chamber. The control unit controls the blowing of the water vapor from the water vapor blowing unit and the blowing of the superheated water vapor from the third superheated water vapor blowing unit. When the interior of the chamber is cleaned, the control unit blows out the water vapor from the water vapor blowing unit and blows out the superheated water vapor from the third superheated water vapor blowing unit.

According to another aspect of the present invention, the substrate processing method includes: a holding step of holding a substrate in a chamber by a substrate holding portion; and a step of blowing superheated water vapor into the chamber from a first superheated water vapor blowing portion located between the air supply mechanism and the substrate held by the substrate holding portion while air is being supplied into the chamber by an air supply mechanism.

In a certain embodiment, the substrate processing method further includes a first mixed liquid spraying step, which rotates the substrate held on the substrate holding portion and sprays the first mixed liquid of sulfuric acid and hydrogen peroxide onto the rotating substrate. When spraying the first mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing portion.

In a certain embodiment, the substrate processing method further includes an immersion step, which stops spraying the first mixed liquid and controls the rotation speed of the substrate to form an immersion state in which the liquid film of the first mixed liquid is supported on the upper surface of the substrate. When the immersion state is formed, the superheated water vapor is blown out from the first superheated water vapor blowing part, and the superheated water vapor is blown out from the second superheated water vapor blowing part toward the substrate held on the substrate holding part. The second superheated water vapor blowing part is supported on a liquid receiving part that receives the first mixed liquid discharged from the rotating substrate.

In a certain embodiment, the second superheated water vapor blowing part includes an upper superheated water vapor blowing part and a lower superheated water vapor blowing part. The upper superheated water vapor blowing part blows the superheated water vapor toward the upper surface of the substrate held in the substrate holding part. The lower superheated water vapor blowing part blows the superheated water vapor toward the lower surface of the substrate held in the substrate holding part.

In a certain embodiment, the substrate processing method further includes an extrusion step, which sprays hydrogen peroxide onto the rotating substrate to discharge the liquid film of the first mixed liquid from the upper surface of the substrate. When the hydrogen peroxide is sprayed, the blowing of the superheated water vapor is stopped.

In a certain embodiment, the substrate processing method further includes an extrusion step, which sprays hydrogen peroxide toward the rotating substrate to discharge the liquid film of the first mixed liquid from the upper surface of the substrate. When spraying the first mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing part at a first flow rate. When spraying the hydrogen peroxide, the superheated water vapor is blown out from the first superheated water vapor blowing part at a second flow rate that is less than the first flow rate.

In a certain embodiment, the substrate processing method further includes a second mixed liquid spraying step, in which the second mixed liquid mixed with ammonia water, hydrogen peroxide and pure water is sprayed onto the rotating substrate while the substrate held on the substrate holding portion is rotated. When spraying the second mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing portion.

In a certain embodiment, the substrate processing method further includes the following steps: blowing water vapor into the chamber from a water vapor blowing portion located between the air supply mechanism and the substrate held on the substrate holding portion while the air supply mechanism is supplying air into the chamber; and spraying a cleaning liquid onto the rotating substrate while the substrate held on the substrate holding portion is rotating. When spraying the cleaning liquid, the water vapor is blown out from the water vapor blowing portion.

In a certain embodiment, the substrate processing method further includes a drying step, wherein after stopping the spraying of the cleaning liquid, the rotation speed of the substrate is controlled to remove the cleaning liquid from the upper surface of the substrate to dry the upper surface of the substrate. During the drying step, the blowing of the water vapor is stopped.

According to another aspect of the present invention, the chamber cleaning method includes a step of cleaning the interior of a chamber in which substrate processing is performed. When cleaning the interior of the chamber, superheated water vapor is blown toward the inner wall surface of the chamber, and water vapor is blown into the chamber from a water vapor blowing portion located between an air supply mechanism that supplies air to the chamber and a substrate holding portion that holds the substrate in the chamber.

According to the substrate processing device, substrate processing method and chamber cleaning method of the present invention, substrate contamination caused by chemical liquid atmosphere can be reduced.

2: Substrate processing unit

2a: Space below

2b: Upper space

3: Air supply mechanism

4: Rotating chuck

5: Rotating motor part

6: No. 1 nozzle

7: No. 2 nozzle

8: No. 3 nozzle

9: Liquid receiving part

9a: Top

10A: Fluid box

10B: Fluid box

20: Substrate heating unit

21: Heating components

22: Lifting shaft

23: Power Supply Department

24: Heater lifting part

31: The first blowing part

32: The second blowing part

32a: Upper blow-out section

32b: Lower blow-out section

33: The third blowing part

34: The fourth blowing part

41: Rotating base

42: Clamping plate components

51:shaft

52: Motor body

61: No. 1 nozzle moving mechanism

62: First liquid medicine supply unit

71: Second nozzle moving mechanism

72: Second liquid medicine supply unit

82: Cleaning fluid supply unit

91: Protective parts

92: Guidance Department

93: inclined part

94: Protective parts lifting part

100: Substrate processing device

101: Control device

102: Control Department

103: Memory Department

201: Chamber

202:Up the wall

202a: Air outlet

203: Side wall

203a: Moving in and moving out

204: Rectifier plate

204a: Through hole

205:Lower wall

206: Exhaust pipe

207:Block

300: Steam supply unit

300A: Water vapor generation unit

301: Storage Department

302: Water vapor generation heater

303: Superheated water vapor generating heater

311: 1st water vapor pipe

312: 1st superheated water steam valve

313: 1st flow control valve

321: Second steam pipe

321a: 1st piping

321b: Second piping

322: Second superheated water steam valve

322a: Valve No. 1

322b: Valve No. 2

331: The third steam pipe

332: 3rd superheated water steam valve

341: 4th water vapor pipe

342: Steam valve

343: Second flow control valve

400: Blocking Department

401: Block board

402: Support axis

403: Support arm

404: Lifting unit

611: No. 1 nozzle arm

612: No. 1 nozzle base

613: No. 1 nozzle moving part

621: First liquid supply piping

621a: 1st piping

621b: Second piping

631: Component 1 open/close valve

632: Component 2 open/close valve

643: Heater

711: No. 2 nozzle arm

712: No. 2 nozzle base

713: Second nozzle moving part

721: Second liquid supply piping

731: Liquid medicine opening and closing valve

821: Cleaning fluid supply piping

831: Cleaning fluid on/off valve

AX1: 1st rotation axis

AX2: Second rotation axis

AX3: 3rd rotation axis

CP: Connection part

CR: Center robot

IR: transfer robot

LP: Loading port

S1~S6: Steps

S31~S38: Steps

S41~S46: Steps

SC1: mixed liquid

TW:Tower

W: substrate

FIG1 is a schematic top view of a substrate processing device according to an embodiment of the present invention.

FIG2 is a cross-sectional view schematically showing the structure of a substrate processing unit included in a substrate processing device of an embodiment of the present invention.

FIG3 is another cross-sectional view schematically showing the structure of the substrate processing section included in the substrate processing device of the embodiment of the present invention.

FIG. 4 is another cross-sectional view schematically showing the structure of the substrate processing unit included in the substrate processing device of the embodiment of the present invention.

FIG5 is a diagram showing the structure of a substrate processing device according to an embodiment of the present invention.

FIG6 is a diagram showing the structure of the first liquid supply unit included in the substrate processing device of the embodiment of the present invention.

FIG7 is a flow chart showing a substrate processing method according to an embodiment of the present invention.

FIG8 is a flow chart showing the substrate processing and water vapor processing included in the substrate processing method of the embodiment of the present invention.

Figure 9 is a schematic diagram showing the substrate processing section during pre-heating.

Figure 10 is a schematic diagram showing the substrate processing section during SPM processing.

Figure 11 is a schematic diagram showing the substrate processing section during immersion treatment.

FIG. 12 schematically shows a substrate processing section when a substrate is treated with hydrogen peroxide.

Figure 13 is a schematic diagram showing the substrate processing section during the cleaning process.

FIG. 14 schematically shows a substrate processing section when a substrate is processed by SC1.

Figure 15 is a schematic diagram showing the substrate processing section during the drying process.

FIG16 schematically shows the substrate processing section when the interior of the chamber is cleaned.

FIG17 is a cross-sectional view schematically showing the structure of a substrate processing unit included in a variation of a substrate processing device according to an embodiment of the present invention.

The following describes the implementation forms of the substrate processing device, substrate processing method and chamber cleaning method of the present invention with reference to the drawings (FIG. 1 to FIG. 17). However, the present invention is not limited to the following implementation forms, and can be implemented in various forms without departing from the scope of its main purpose. In addition, there are cases where the description of the parts that are repeatedly described is appropriately omitted. In addition, in the drawings, the same reference symbol is marked for the same or equivalent parts, and the description is not repeated.

In the substrate processing device, substrate processing method and chamber cleaning method of the present invention, various substrates such as semiconductor wafers, glass substrates for masks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks can be applied as the "substrates" to be processed. In the following, the implementation form of the present invention is mainly described by taking a disk-shaped semiconductor wafer as the substrate processing object, but the substrate processing device, substrate processing method and chamber cleaning method of the present invention can also be applied to various substrates other than the above-mentioned semiconductor wafers. In addition, the shape of the substrate is not limited to a disk shape, and the substrate processing device, substrate processing method and chamber cleaning method of the present invention can be applied to substrates of various shapes.

First, referring to FIG. 1 , the substrate processing device 100 of the present embodiment is described. FIG. 1 is a schematic diagram of the substrate processing device 100 of the present embodiment. Specifically, FIG. 1 is a schematic top view of the substrate processing device 100 of the present embodiment. The substrate processing device 100 processes the substrate W by a processing liquid. More specifically, the substrate processing device 100 is a single-chip device that processes the substrate W piece by piece.

As shown in FIG. 1 , the substrate processing device 100 has a plurality of substrate processing units 2, a fluid box 10A, a plurality of fluid boxes 10B, a plurality of loading ports LP, a carrier robot IR, a central robot CR, and a control device 101.

The loading ports LP are each stacked and hold a plurality of substrates W. In this embodiment, a mask (anti-etching agent film) with useless anti-etching agent is attached to each of the unprocessed substrates W (substrates W before processing).

The carrier robot IR transports the substrate W between the loading port LP and the central robot CR. The central robot CR transports the substrate W between the carrier robot IR and the processing unit 2. In addition, the following device structure can be set: a loading platform (passage) for temporarily loading the substrate W is set between the carrier robot IR and the central robot CR, and the substrate W is indirectly transferred between the carrier robot IR and the central robot CR through the loading platform.

A plurality of substrate processing units 2 form a plurality of towers TW (four towers TW in FIG. 1 ). The plurality of towers TW are arranged so as to surround the central robot CR when viewed from above. Each tower TW includes a plurality of processing units 2 stacked in upper and lower layers (three substrate processing units 2 in FIG. 1 ).

The fluid box 10A contains fluid. The fluid includes a processing liquid. The fluid boxes 10B correspond to one of the multiple towers TW. The processing liquid in the fluid box 10A is supplied to all substrate processing units 2 included in the tower TW corresponding to the fluid box 10B through any fluid box 10B.

The treatment liquid includes sulfuric acid (H ₂ SO ₄ ), hydrogen peroxide (H ₂ O ₂ ), ammonia water (NH ₄ OH) and a cleaning liquid. In the present embodiment, the cleaning liquid is pure water. Pure water is, for example, deionized water (DIW). In addition, the cleaning liquid may be, for example, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10ppm to 100ppm). When the cleaning liquid is not pure water, the fluid in the fluid box 10A further includes pure water.

The substrate processing unit 2 supplies the processing liquid to the upper surface of the substrate W. Specifically, the substrate processing unit 2 supplies the sulfuric acid hydrogen peroxide mixture (SPM), hydrogen peroxide, cleaning liquid and SC1 to the substrate W in the order of SPM, hydrogen peroxide, cleaning liquid, SC1, cleaning liquid. The sulfuric acid hydrogen peroxide mixture is a mixture of sulfuric acid and hydrogen peroxide. SC1 is a mixture of ammonia water, hydrogen peroxide and pure water.

If SPM is supplied to the upper surface of substrate W, the anti-etching agent film (organic matter) is peeled off from the upper surface of substrate W, and the anti-etching agent film is removed from the upper surface of substrate W. If SC1 is supplied to the upper surface of substrate W, particles attached to the upper surface of substrate W are removed. More specifically, the hydrogen peroxide contained in SC1 oxidizes the silicon on the main surface of substrate W, and the silicon oxide is etched by ammonia, and various particles are removed by peeling. Therefore, the residues of the anti-etching agent film and the insoluble particles are peeled off and removed by SC1.

The control device 101 controls the operation of each part of the substrate processing device 100. For example, the control device 101 controls the loading port LP, the carrier robot IR, the central robot CR and the substrate processing unit 2. The control device 101 includes a control unit 102 and a memory unit 103.

The control unit 102 controls the operation of each unit of the substrate processing device 100 based on various information stored in the memory unit 103. The control unit 102 has a processor, for example. The control unit 102 may also have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 102 may also have a general-purpose computer or a dedicated computer.

The memory unit 103 stores various information for controlling the operation of the substrate processing device 100. For example, the memory unit 103 stores data and computer programs. The data includes various recipe data. The recipe data includes, for example, a process recipe. The process recipe is data that specifies the processing sequence of a substrate. Specifically, the process recipe specifies the execution sequence of a series of processes included in the substrate processing, the content of each process, and the conditions of each process (the setting value of the parameter).

The memory unit 103 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 103 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory unit 103 may also include a removable medium.

Next, referring to FIG. 1 to FIG. 3 , the substrate processing device 100 of this embodiment is described. FIG. 2 is a cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing device 100 of this embodiment. FIG. 3 is another cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing device 100 of this embodiment. Specifically, the interior of the substrate processing unit 2 viewed from the top is shown.

As shown in FIG. 2 , the substrate processing unit 2 includes an air supply mechanism 3, a chamber 201, a rectifying plate 204, a rotary chuck 4, a rotary motor unit 5, a first nozzle 6, a first nozzle moving mechanism 61, a second nozzle 7, a second nozzle moving mechanism 71, a third nozzle 8, a liquid receiving unit 9, a substrate heating unit 20, and an exhaust pipe 206. In addition, the substrate processing device 100 includes a first liquid supply unit 62, a second liquid supply unit 72, and a cleaning liquid supply unit 82.

The control device 101 (control unit 102) controls the air supply mechanism 3, the rotary chuck 4, the rotary motor unit 5, the first nozzle moving mechanism 61, the second nozzle moving mechanism 71, the liquid receiving unit 9, the substrate heating unit 20, the first liquid supply unit 62, the second liquid supply unit 72 and the cleaning liquid supply unit 82.

The chamber 201 has a roughly box-like shape. More specifically, the chamber 201 has an upper wall 202, a side wall 203, and a lower wall 205. The chamber 201 accommodates a substrate W, a rectifying plate 204, a rotary chuck 4, a rotary motor unit 5, a first nozzle 6, a first nozzle moving mechanism 61, a second nozzle 7, a second nozzle moving mechanism 71, a third nozzle 8, a liquid receiving unit 9, a portion of the substrate heating unit 20, a portion of the exhaust pipe 206, a portion of the first liquid supply unit 62, a portion of the second liquid supply unit 72, and a portion of the cleaning liquid supply unit 82. The substrate W is moved into the chamber 201 and processed in the chamber 201. That is, the substrate is processed in the chamber 201.

The air supply mechanism 3 is arranged outside the chamber 201. More specifically, the air supply mechanism 3 is arranged above the chamber 201 (upper wall 202) and is opposite to the outer wall surface of the upper wall 202. The air supply mechanism 3 can also be set on the outer wall surface of the upper wall 202. In detail, the chamber 201 has an air supply port 202a that passes through the upper wall 202 in the vertical direction, and the air supply mechanism 3 is arranged above the air supply port 202a. The air supply port 202a is formed, for example, at a position overlapping with the substrate W when viewed from above.

The air supply mechanism 3 sends air into the chamber 201. More specifically, the air supply mechanism 3 sucks in the air in the clean room where the substrate processing device 100 is installed, and sends air into the chamber 201 through the air supply port 202a. In detail, the air supply mechanism 3 has blades, an electric motor, and a filter. The air in the clean room is sucked in by the rotation of the blades, and the air is sent to the air supply port 202a. The electric motor rotates the blades. The filter filters the air transmitted by the rotating blades. As a result, the air purified by the filter is sent into the chamber 201. The air supply mechanism 3 is, for example, a fan filter unit (FFU).

The rectifying plate 204 is disposed in the chamber 201. More specifically, the rectifying plate 204 maintains a horizontal posture. Therefore, the rectifying plate 204 expands along the horizontal plane. For example, the rectifying plate 204 is supported by the side wall 203. The rectifying plate 204 divides the internal space of the chamber 201 into a lower space 2a and an upper space 2b. The upper space 2b is a space above the lower space 2a.

In detail, the rectifying plate 204 is arranged at the upper part of the chamber 201, facing the inner wall surface of the upper wall 202. Specifically, the rectifying plate 204 is arranged above the components used for substrate processing in the chamber 201. Therefore, the substrate processing is performed in the lower space 2a. That is, the lower space 2a is the processing space. The components used for substrate processing include a rotary chuck 4, a rotary motor part 5, a first nozzle 6, a first nozzle moving mechanism 61, a second nozzle 7, a second nozzle moving mechanism 71, a third nozzle 8, a liquid receiving part 9 and a substrate heating part 20.

The rectifying plate 204 rectify the air sent from the air supply mechanism 3 to the chamber 201. More specifically, the rectifying plate 204 rectify the air sent from the air supply mechanism 3 to the upper space 2b, generating a downward flow in the lower space 2a (processing space).

Specifically, the rectifying plate 204 has a plurality of through holes 204a. The through holes 204a penetrate the rectifying plate 204 in the thickness direction of the rectifying plate 204. For example, the through holes 204a extend in the vertical direction. The plurality of through holes 204a are formed in the entire area of the rectifying plate 204. The air supply port 202a of the upper wall 202 connects the outside of the chamber 201 with the upper space 2b. The air sent out from the air supply mechanism 3 diffuses in the upper space 2b and fills the upper space 2b. The air filling the upper space 2b passes through the plurality of through holes 204a and flows from the entire area of the rectifying plate 204 into the lower space 2a. As a result, a downward airflow (downflow) is generated in the lower space 2a, flowing downward from the entire area of the rectifying plate 204.

The electric motor of the air supply mechanism 3 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) can also control the electric motor of the air supply mechanism 3 to always generate a downward flow in the lower space 2a (processing space).

The rotary chuck 4 holds the substrate W in the lower space 2a of the chamber 201. The rotary chuck 4 is an example of a substrate holding portion. More specifically, the rotary chuck 4 holds the substrate W in a horizontal position. As shown in FIG. 2 , the rotary chuck 4 may also have a rotary base 41 and a plurality of chuck components 42.

The rotating base 41 is roughly disk-shaped and supports a plurality of chuck members 42 in a horizontal position. The plurality of chuck members 42 are arranged on the periphery of the rotating base 41. The plurality of chuck members 42 clamp the periphery of the substrate W. The substrate W is held in a horizontal position by the plurality of chuck members 42. The movement of the plurality of chuck members 42 is controlled by the control device 101 (control unit 102).

The rotary motor unit 5 rotates the substrate W held on the rotary chuck 4. The rotary motor unit 5 is an example of a substrate rotating unit. More specifically, the rotary motor unit 5 rotates the substrate W and the rotary chuck 4 integrally around the first rotation axis AX1 extending in the vertical direction. The control device 101 (control unit 102) controls the rotation of the substrate W of the rotary motor unit 5.

Specifically, the first rotation axis AX1 passes through the center of the rotation base 41. The plurality of chuck components 42 are arranged in such a way that the center of the substrate W coincides with the center of the rotation base 41. Therefore, the substrate W rotates with the center of the substrate W as the rotation center.

As shown in FIG. 2 , the rotary motor unit 5 may also have a shaft 51 and a motor body 52. The shaft 51 is coupled to the rotary base 41. The motor body 52 rotates the shaft 51. As a result, the rotary base 41 rotates. The movement of the motor body 52 is controlled by the control device 101 (control unit 102).

The first nozzle 6 is located in the lower space 2a of the chamber 201, and sprays SPM and hydrogen peroxide mutually exclusively to the substrate W rotated by the rotary motor unit 5. The first nozzle 6 is an example of the first mixed liquid spraying unit. By spraying SPM on the upper surface of the rotating substrate W, a liquid film of SPM is formed on the upper surface of the substrate W. Similarly, by spraying hydrogen peroxide on the upper surface of the rotating substrate W, a liquid film of hydrogen peroxide is formed on the upper surface of the substrate W.

The spraying of SPM from the first nozzle 6 and the spraying of hydrogen peroxide from the first nozzle 6 are controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the spraying of SPM from the first nozzle 6 and the spraying of hydrogen peroxide from the first nozzle 6 by controlling the first liquid supply unit 62.

The first liquid medicine supply unit 62 supplies SPM and hydrogen peroxide to the first nozzle 6 mutually exclusively. As shown in FIG2 , the first liquid medicine supply unit 62 may also have a first liquid medicine supply pipe 621, a first component on-off valve 631, and a second component on-off valve 632. A portion of the first liquid medicine supply pipe 621 is accommodated in the chamber 201. The first component on-off valve 631 and the second component on-off valve 632 are accommodated in the fluid box 10B described with reference to FIG1 .

The first liquid chemical supply pipe 621 supplies SPM and hydrogen peroxide to the first nozzle 6 mutually exclusively. Specifically, the first liquid chemical supply pipe 621 is a tubular component that allows SPM and hydrogen peroxide to flow to the first nozzle 6.

Specifically, the first liquid supply pipe 621 includes a first pipe 621a and a second pipe 621b. One end of the first pipe 621a is connected to the first nozzle 6. The second pipe 621b is connected to the first pipe 621a. Sulfuric acid flows into the first pipe 621a. Hydrogen peroxide water flows into the second pipe 621b.

The first component on-off valve 631 is installed in the first pipe 621a. Specifically, the first component on-off valve 631 is arranged on the upstream side of the connection point CP between the first pipe 621a and the second pipe 621b. The second component on-off valve 632 is installed in the second pipe 621b.

The first component on-off valve 631 and the second component on-off valve 632 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing actions of the first component on-off valve 631 and the second component on-off valve 632. The actuators of the first component on-off valve 631 and the second component on-off valve 632 are, for example, pneumatic actuators or electric actuators.

When supplying SPM to the substrate W, the control device 101 (control unit 102) sets the first component opening and closing valve 631 and the second component opening and closing valve 632 to an open state. When the first component opening and closing valve 631 and the second component opening and closing valve 632 are set to an open state, sulfuric acid flows through the first pipe 621a toward the first nozzle 6, and hydrogen peroxide flows through the second pipe 621b toward the connection part CP. As a result, sulfuric acid and hydrogen peroxide are mixed at the connection part CP to generate SPM. SPM flows through the first pipe 621a toward the first nozzle 6, and SPM is ejected from the first nozzle 6 toward the substrate W.

When supplying hydrogen peroxide to the substrate W, the control device 101 (control unit 102) sets the first component on-off valve 631 to a closed state and sets the second component on-off valve 632 to an open state. When the first component on-off valve 631 is set to a closed state and the second component on-off valve 632 is set to an open state, the flow of sulfuric acid through the first pipe 621a is stopped, and the hydrogen peroxide flows through the second pipe 621b toward the connection part CP. As a result, the hydrogen peroxide flowing into the first pipe 621a flows through the first pipe 621a toward the first nozzle 6, and the hydrogen peroxide is sprayed from the first nozzle 6 toward the substrate W.

When the control device 101 (control unit 102) stops spraying SPM and hydrogen peroxide from the first nozzle 6, the first component on-off valve 631 and the second component on-off valve 632 are set to a closed state. When the first component on-off valve 631 and the second component on-off valve 632 are set to a closed state, the flow of sulfuric acid through the first pipe 621a is stopped, and the flow of hydrogen peroxide through the second pipe 621b is stopped.

The second nozzle 7 is located in the lower space 2a of the chamber 201, and ejects SC1 mutually exclusively toward the substrate W rotated by the rotary motor unit 5. The second nozzle 7 is an example of a second mixed liquid ejection unit. The ejection of SC1 from the second nozzle 7 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the ejection of SC1 from the second nozzle 7 by controlling the second liquid supply unit 72.

The second liquid medicine supply unit 72 supplies SC1 to the second nozzle 7. As shown in FIG2 , the second liquid medicine supply unit 72 may also have a second liquid medicine supply pipe 721 and a liquid medicine opening and closing valve 731. A portion of the second liquid medicine supply pipe 721 is accommodated in the chamber 201. The liquid medicine opening and closing valve 731 is accommodated in the fluid box 10B described with reference to FIG1 .

The second liquid medicine supply pipe 721 supplies SC1 to the second nozzle 7. Specifically, the second liquid medicine supply pipe 721 is a tubular component that allows SC1 to flow to the second nozzle 7.

The liquid medicine opening and closing valve 731 is installed in the second liquid medicine supply pipe 721. The liquid medicine opening and closing valve 731 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the liquid medicine opening and closing valve 731. The actuator of the liquid medicine opening and closing valve 731 is, for example, a pneumatic actuator or an electric actuator.

The control device 101 (control unit 102) sets the chemical liquid on-off valve 731 to an open state when supplying SC1 to the substrate W. When the chemical liquid on-off valve 731 is set to an open state, SC1 flows toward the second nozzle 7 through the second chemical liquid supply pipe 721. As a result, SC1 is ejected from the second nozzle 7 toward the substrate W.

When the control device 101 (control unit 102) stops ejecting SC1 from the second nozzle 7, it sets the liquid medicine on-off valve 731 to a closed state. When the liquid medicine on-off valve 731 is set to a closed state, the flow of SC1 through the second liquid medicine supply pipe 721 stops.

The third nozzle 8 is located in the lower space 2a of the chamber 201, and sprays the cleaning liquid onto the substrate W rotated by the rotary motor unit 5. The third nozzle 8 is an example of a cleaning liquid spraying unit. The spraying of the cleaning liquid from the third nozzle 8 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the spraying of the cleaning liquid from the third nozzle 8 by controlling the cleaning liquid supply unit 82.

The cleaning liquid supply unit 82 supplies cleaning liquid to the third nozzle 8. As shown in FIG2 , the cleaning liquid supply unit 82 may also have a cleaning liquid supply pipe 821 and a cleaning liquid on-off valve 831. A portion of the cleaning liquid supply pipe 821 is accommodated in the chamber 201. The cleaning liquid on-off valve 831 is accommodated in the fluid box 10B described with reference to FIG1 .

The cleaning liquid supply pipe 821 supplies cleaning liquid to the third nozzle 8. Specifically, the cleaning liquid supply pipe 821 is a tubular component that allows the cleaning liquid to flow to the third nozzle 8.

The cleaning liquid on-off valve 831 is installed in the cleaning liquid supply pipe 821. The cleaning liquid on-off valve 831 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the cleaning liquid on-off valve 831. The actuator of the cleaning liquid on-off valve 831 is, for example, a pneumatic actuator or an electric actuator.

When the cleaning liquid is to be supplied to the substrate W, the control device 101 (control unit 102) sets the cleaning liquid on-off valve 831 to an open state. When the cleaning liquid on-off valve 831 is set to an open state, the cleaning liquid flows toward the third nozzle 8 through the cleaning liquid supply pipe 821. As a result, the cleaning liquid is ejected from the third nozzle 8 toward the substrate W.

When the cleaning liquid is to be stopped from being sprayed from the third nozzle 8, the control device 101 (control unit 102) sets the cleaning liquid on-off valve 831 to a closed state. When the cleaning liquid on-off valve 831 is set to a closed state, the cleaning liquid is stopped from flowing through the cleaning liquid supply pipe 821.

The first nozzle moving mechanism 61 moves the first nozzle 6 along the horizontal plane. The movement of the first nozzle moving mechanism 61 is controlled by the control device 101 (control unit 102). More specifically, the first nozzle moving mechanism 61 moves the first nozzle 6 between the first retreat area and the processing position. The first retreat area is the area outside the rotary chuck 4. For example, the first retreat area can also be the area outside the liquid receiving part 9. Figure 3 shows the first nozzle 6 moved to the first retreat area.

In this embodiment, the processing position of the first nozzle 6 is a position opposite to the center of the substrate W. The first nozzle 6 ejects SPM and hydrogen peroxide water from the processing position to the substrate W mutually exclusively. As shown in FIG. 3 , the first nozzle moving mechanism 61 moves the first nozzle 6 horizontally along an arc-shaped track passing through the center of the substrate W.

Specifically, as shown in FIG. 2 , the first nozzle moving mechanism 61 may include a first nozzle arm 611, a first nozzle base 612, and a first nozzle moving portion 613. The first nozzle base 612 extends in a vertical direction. The base end of the first nozzle arm 611 is coupled to the first nozzle base 612. The first nozzle arm 611 extends in a horizontal direction from the first nozzle base 612.

The first nozzle arm 611 supports the first nozzle 6. The first nozzle 6 protrudes directly downward from the first nozzle arm 611. The first nozzle 6 may also be disposed at the front end of the first nozzle arm 611.

The first nozzle moving part 613 rotates the first nozzle base 612 around the second rotation axis AX2 extending in the lead vertical direction. As a result, the first nozzle 6 moves near the first nozzle base 612 along the circumferential direction around the second rotation axis AX2. The first nozzle moving part 613 is controlled by the control device 101 (control part 102). The first nozzle moving part 613 may also include a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

The second nozzle moving mechanism 71 moves the second nozzle 7 along the horizontal plane. The movement of the second nozzle moving mechanism 71 is controlled by the control device 101 (control unit 102). In more detail, the second nozzle moving mechanism 71 moves the second nozzle 7 between a position opposite to the center of the substrate W and a second retreat position. The second retreat area is an area outside the rotary chuck 4. For example, the second retreat area may also be an area outside the liquid receiving portion 9. FIG. 3 shows the second nozzle 7 moved to the second retreat area.

In this embodiment, the second nozzle 7 moves between a position opposite to the center of the substrate W and a position opposite to the periphery of the substrate W, while spraying SC1 onto the substrate W. The second nozzle 7 is a so-called scanning nozzle. As shown in FIG. 3 , the second nozzle moving mechanism 71 moves the second nozzle 7 horizontally along an arc-shaped track passing through the center of the substrate W.

As shown in FIG. 2 , the second nozzle moving mechanism 71 may also include a second nozzle arm 711, a second nozzle base 712, and a second nozzle moving portion 713. The second nozzle moving portion 713 rotates the second nozzle base 712 around the third rotation axis AX3 extending in the vertical direction. As a result, the second nozzle 7 moves near the second nozzle base 712 along the circumferential direction around the third rotation axis AX3. Since the structure of the second nozzle moving mechanism 71 is substantially the same as that of the first nozzle moving mechanism 61, its description is omitted.

The liquid receiving part 9 receives the processing liquid (SPM, hydrogen peroxide, cleaning liquid and SC1) discharged from the substrate W rotated by the rotating motor part 5. As shown in FIG. 2, the liquid receiving part 9 may also have a protective member 91 and a protective member lifting part 94.

The protective member 91 is roughly cylindrical and surrounds the substrate W held on the rotating chuck 4. The protective member 91 receives the processing liquid discharged from the substrate W. More specifically, the protective member 91 receives the processing liquid scattered from the rotating substrate W.

As shown in FIG. 2 , the protective member 91 may also include a cylindrical guide portion 92 and a cylindrical inclined portion 93. The inclined portion 93 extends obliquely upward toward the first rotation axis AX1. The guide portion 92 extends downward from the lower end of the inclined portion 93. The inclined portion 93 includes an annular upper end 9a. The upper end 9a has an inner diameter larger than the substrate W and the rotating base 41. The upper end 9a of the inclined portion 93 is equivalent to the upper end of the protective member 91. In the following, there is a case where the upper end 9a of the inclined portion 93 is recorded as the upper end 9a of the protective member 91. As shown in FIG. 3 , the upper end 9a surrounds the substrate W and the rotating base 41 when viewed from above.

The protective member lifting unit 94 raises and lowers the protective member 91 between the first lower position indicated by the two-dot chain in FIG. 2 and the first upper position indicated by the solid line in FIG. 2. Here, the first lower position indicates that the upper end 9a of the protective member 91 is arranged at a position below the substrate W. The first upper position indicates that the upper end 9a of the protective member 91 is arranged at a position above the substrate W. The protective member lifting unit 94 is controlled by the control device 101 (control unit 102). The protective member lifting unit 94 may also have a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

For example, after the substrate W is held by the rotary chuck 4, the control device 101 (control unit 102) moves the protective member 91 from the first lower position to the first upper position. By arranging the protective member 91 at the first upper position, the protective member 91 can receive the processing liquid scattered from the substrate W. In addition, when the substrate W is carried out of the chamber 201, the control device 101 (control unit 102) moves the protective member 91 from the first upper position to the first lower position. By arranging the protective member 91 at the first lower position, the substrate W can be transferred between the central robot CR and the rotary chuck 4 described with reference to FIG. 1.

The exhaust pipe 206 exhausts the gas in the chamber 201 to the outside of the chamber 201. Specifically, the gas in the exhaust pipe 206 is always sucked by an exhaust device (not shown) installed in the factory where the substrate processing apparatus 100 is installed. The upstream end of the exhaust pipe 206 is arranged below the rotating base 41. The gas inside the protective member 91 is attracted to the upstream end of the exhaust pipe 206 by the suction force of the exhaust device transmitted through the exhaust pipe 206. The gas floating in the space above the protective member 91 is attracted to the inner side of the upper end 9a of the protective member 91 by the suction force transmitted from the exhaust pipe 206 to the inner side of the protective member 91. As a result, the gas in the chamber 201 is discharged to the outside of the chamber 201 through the inner side of the protective member 91. At this time, the gas in the chamber 201 passes near the periphery of the substrate W held on the rotary chuck 4.

The substrate heating unit 20 heats the substrate W held on the rotary chuck 4. For example, as shown in FIG. 2 , the substrate heating unit 20 may also have a heating component 21, a lifting shaft 22, a power supply unit 23, and a heater lifting unit 24.

The heating member 21 is roughly disk-shaped and is located between the substrate W held by the chuck member 42 and the rotating base 41. A heater is embedded in the heating member 21. The heater includes, for example, a resistor. The power supply unit 23 energizes the heater embedded in the heating member 21 to heat the heating member 21. The power supply unit 23 is controlled by the control device 101 (control unit 102).

The lifting shaft 22 is a roughly rod-shaped member extending in a roughly vertical direction. The lifting shaft 22 is coupled to the heating member 21. The heater lifting unit 24 lifts and lowers the heating member 21 by lifting and lowering the lifting shaft 22. Specifically, the heater lifting unit 24 lifts and lowers the heating member 21 between the lower surface of the substrate W held by the chuck member 42 and the upper surface of the rotating base 41. The heater lifting unit 24 is controlled by the control device 101 (control unit 102). The heater lifting unit 24 may also have, for example, a ball screw mechanism, and an electric motor that provides driving force to the ball screw mechanism.

Next, referring to FIG. 3 , the substrate processing apparatus 100 of this embodiment will be described. As shown in FIG. 3 , the chamber 201 further has a gate 207. In addition, a loading and unloading port 203a is formed on the side wall 203 of the chamber 201. The gate 207 can move between a position of opening the loading and unloading port 203a and a position of closing the loading and unloading port 203a. The movement of the gate 207 is controlled by the control device 101 (control unit 102).

The loading and unloading port 203a is an opening that connects the inside and outside of the chamber 201. When the central robot CR described in FIG. 1 opens the loading and unloading port 203a through the gate 207, the substrate W is loaded into the lower space 2a of the chamber 201 through the loading and unloading port 203a. Also, when the central robot CR described in FIG. 1 opens the loading and unloading port 203a through the gate 207, the substrate W is loaded from the inside of the chamber 201 to the outside through the loading and unloading port 203a. For example, the control device 101 (control unit 102) transfers the substrate W from the central robot CR to the rotary chuck 4, and the hand of the central robot CR retreats to the outside of the chamber 201, and then closes the gate 207.

Next, referring to FIG. 2 , the substrate processing device 100 of this embodiment will be further described. As shown in FIG. 2 , the substrate processing unit 2 further includes a first blowing unit 31, a second blowing unit 32, a third blowing unit 33, and a fourth blowing unit 34.

The first blowing section 31 is located between the air supply mechanism 3 and the substrate W held on the rotary chuck 4, and blows superheated water vapor to the lower space 2a of the chamber 201. The first blowing section 31 is an example of the first superheated water vapor blowing section. The blowing of superheated water vapor from the first blowing section 31 is controlled by the control device 101 (control section 102). In addition, superheated water vapor is generated by heating water vapor. Therefore, superheated water vapor is a high temperature higher than the temperature of water vapor. Specifically, the temperature when water vapor is generated is 100°C, and the temperature when superheated water vapor is generated is a high temperature higher than 100°C.

The superheated water vapor blown out from the first blowing part 31 flows together with the air in the chamber 201 by the downflow and the suction force from the exhaust pipe 206. Therefore, the superheated water vapor is attracted to the inner side of the upper end 9a of the protective member 91. At this time, the superheated water vapor is held near the peripheral part of the substrate W of the rotating chuck 4. As a result, the temperature drop of the peripheral part of the substrate W is suppressed by the superheated water vapor.

In this embodiment, the first blow-out section 31 is arranged above the first nozzle 6. For example, as shown in FIG. 2 , the first blow-out section 31 may also be supported on the rectifying plate 204. For example, the first blow-out section 31 is fixed to the rectifying plate 204 via a bracket. Moreover, when viewed from above, the first blow-out section 31 is located outside the substrate W held on the rotary chuck 4. Therefore, even if water droplets fall from the first blow-out section 31, the water droplets are not easy to fall onto the substrate W. For example, the first blow-out section 31 may also be arranged at a position overlapping with the liquid receiving section 9 when viewed from above.

The first blowing section 31 blows out superheated water vapor when the substrate W is processed by SPM, for example. That is, the control device 101 (control section 102) blows out superheated water vapor from the first blowing section 31 when the SPM is ejected from the first nozzle 6. Hereinafter, the substrate processing by SPM may be referred to as "SPM processing".

As described above, SPM is ejected from the first nozzle 6 toward the center of the substrate W. Therefore, the temperature of the peripheral portion of the substrate W far from the center of the substrate W is easy to decrease compared to the center of the substrate W. Therefore, the anti-etching agent film attached to the peripheral portion of the substrate W is not easy to be peeled off, and the time of the SPM treatment needs to be set to a relatively long time. In contrast, according to this embodiment, since the temperature drop of the peripheral portion of the substrate W can be suppressed by superheated water vapor, the anti-etching agent film attached to the peripheral portion of the substrate W is easy to be peeled off. Therefore, the time of the SPM treatment can be set to a relatively short time, and the anti-etching agent stripping efficiency of the SPM can be improved. As a result, the amount of SPM used for substrate treatment can be reduced.

Furthermore, during the SPM treatment, a chemical liquid atmosphere is generated from the first nozzle 6 or the substrate W. In contrast, according to this embodiment, the diffusion of the chemical liquid atmosphere can be suppressed by superheated water vapor. Therefore, the contamination of the substrate W caused by the chemical liquid atmosphere can be reduced. Specifically, through the downflow, the droplets contained in the superheated water vapor collide with the chemical liquid components floating in the lower space 2a of the chamber 201, giving the chemical liquid components an acceleration in the downward direction. As a result, the chemical liquid components are attracted to the inner side of the upper end 9a of the protective member 91 by the suction force transmitted from the exhaust pipe 206 to the inner side of the protective member 91, and are discharged to the outside of the chamber 201 through the inner side of the protective member 91 together with the gas in the chamber 201.

In particular, in this embodiment, the first blowing portion 31 is arranged above the first nozzle 6. Therefore, compared with the configuration in which the first blowing portion 31 is arranged below the first nozzle 6, the diffusion of the chemical liquid atmosphere generated from the first nozzle 6 can be efficiently suppressed.

Furthermore, according to this embodiment, the liquid receiving part 9, the rotary chuck 4, the rotary motor part 5 and other components around the substrate W can be heated by superheated water vapor to increase the temperature of the components around the substrate W. As a result, the temperature of the substrate W is less likely to drop. Therefore, the stripping efficiency of the anti-etching agent of the SPM can be further improved.

Furthermore, according to the present embodiment, the first blowing portion 31 is arranged at a position relatively far from the first nozzle 6. Therefore, it is not easy to attract the superheated water vapor to the SPM ejected from the first nozzle 6. Therefore, the superheated water vapor is not easy to be uneven in the lower space 2a, so the components arranged in the lower space 2a of the chamber 201 can be efficiently heated by the superheated water vapor.

In addition, the superheated water vapor contains a small amount of water. Therefore, the water contained in the superheated water vapor comes into contact with the SPM, and the heat generated when the SPM reacts with the water can suppress the temperature drop of the substrate W.

In addition, by supplying superheated water vapor, the humidity of the space 2a below the chamber 201 becomes higher. As a result, the SPM on the upper surface of the substrate W is easily expanded, and the substrate W can be processed efficiently.

The second blowing section 32 is supported by the liquid receiving section 9 and blows out superheated water vapor toward the substrate W held on the rotating chuck 4. The second blowing section 32 is an example of a second superheated water vapor blowing section. Specifically, the second blowing section 32 is supported by the protective member 91. For example, the second blowing section 32 is fixed to the protective member 91 via a bracket. The blowing of superheated water vapor from the second blowing section 32 is controlled by the control device 101 (control section 102).

According to this embodiment, superheated water vapor can be supplied to the substrate W from a position relatively close to the substrate W. Therefore, the temperature of the substrate W is less likely to drop, so the stripping efficiency of the SPM anti-etching agent can be further improved. In addition, the diffusion of the chemical liquid atmosphere generated from the substrate W can be effectively suppressed.

In this embodiment, as shown in FIG. 2 , the second blowing section 32 includes an upper blowing section 32a and a lower blowing section 32b. The upper blowing section 32a blows superheated water vapor toward the upper surface of the substrate W held on the rotating chuck 4. The lower blowing section 32b blows superheated water vapor toward the lower surface of the substrate W held on the rotating chuck 4. The upper blowing section 32a is an example of an upper superheated water vapor blowing section. The lower blowing section 32b is an example of a lower superheated water vapor blowing section.

Specifically, the upper blow-out portion 32a is fixed to the top of the outer peripheral surface of the inclined portion 93. That is, the upper blow-out portion 32a is supported near the upper end 9a of the protective member 91. In addition, the lower blow-out portion 32b is fixed to the inner peripheral surface of the protective member 91. For example, the lower blow-out portion 32b can also be fixed to the inner peripheral surface of the guide portion 92.

According to this embodiment, superheated water vapor can be supplied to both the upper and lower surfaces of the substrate W. Therefore, the temperature of the substrate W is less likely to drop, so the stripping efficiency of the SPM anti-etching agent can be further improved. In addition, superheated water vapor can be supplied to the upper surface of the substrate W from a position relatively close to the substrate W. Therefore, the diffusion of the chemical liquid atmosphere generated from the substrate W can be efficiently suppressed.

Furthermore, according to this embodiment, since the upper blowing portion 32a is arranged at the top of the outer peripheral surface of the inclined portion 93, the gas (including superheated water vapor) is sucked from the space above the protective member 91 to the inner side of the upper end 9a of the protective member 91 without being blocked by the upper blowing portion 32a.

The third blowing part 33 blows out superheated water vapor toward the inner wall surface of the chamber 201. The third blowing part 33 is an example of a third superheated water vapor blowing part. In this embodiment, the third blowing part 33 blows out superheated water vapor toward the inner wall surface of the side wall 203. The blowing of superheated water vapor from the third blowing part 33 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) blows out superheated water vapor from the third blowing part 33 when cleaning the inside of the chamber 201.

After the interior of the chamber 201 is cleaned, a process is performed to dry the interior of the chamber 201. For example, an inert gas such as nitrogen is supplied to the interior of the chamber 201 to dry the interior of the chamber 201. The cleaned chamber 201 is used for substrate processing after the interior of the chamber 201 is dried.

However, a large amount of pure water is used when cleaning the inside of the chamber 201. Therefore, the inside of the chamber 201 after cleaning becomes difficult to dry. In contrast, according to this embodiment, since superheated water vapor is supplied to the inner wall surface of the chamber 201 from the third blowing part 33 when cleaning the inside of the chamber 201, the inner wall surface of the chamber 201 is easy to dry. Therefore, the inside of the chamber 201 can be dried efficiently.

In addition, the internal cleaning of the chamber 201 can be performed, for example, every time the substrate processing unit 2 processes a preset number of substrates W (for example, 24 substrates). Alternatively, the internal cleaning of the chamber 201 can also be performed every time a preset time has passed.

The fourth blow-out section 34 is located between the air supply mechanism 3 and the substrate W held on the rotary chuck 4, and blows water vapor to the lower space 2a of the chamber 201. The fourth blow-out section 34 is an example of a water vapor blow-out section. The blowing of water vapor from the fourth blow-out section 34 is controlled by the control device 101 (control section 102). In addition, as has been described, water vapor is lower in temperature than superheated water vapor. Moreover, water vapor has a larger amount of water and larger droplets than superheated water vapor. The water vapor supplied from the fourth blow-out section 34 can also be a spray.

In this embodiment, the fourth blow-out section 34 is arranged above the first nozzle 6. For example, as shown in FIG. 2 , the fourth blow-out section 34 may also be supported on the rectifying plate 204. For example, the fourth blow-out section 34 is fixed to the rectifying plate 204 via a bracket. Moreover, when viewed from above, the fourth blow-out section 34 is located outside the substrate W held on the rotary chuck 4. Therefore, even if water droplets fall from the fourth blow-out section 34, the water droplets are not easy to fall onto the substrate W. For example, the fourth blow-out section 34 may also be arranged at a position overlapping with the liquid receiving section 9 when viewed from above.

The fourth blowing unit 34 blows out water vapor when the substrate W is processed by the cleaning liquid, for example. That is, the control device 101 (control unit 102) blows out water vapor from the fourth blowing unit 34 when the cleaning liquid is sprayed from the third nozzle 8. In the following, the substrate processing with the cleaning liquid is sometimes referred to as "cleaning processing".

According to the present embodiment, the diffusion of the chemical liquid atmosphere can be further suppressed by water vapor. Specifically, as has been described, the droplets of water vapor are larger than the droplets of superheated water vapor. Therefore, the droplets of water vapor are more likely to collide with the chemical liquid components than the superheated water vapor. Therefore, by the suction force transmitted from the exhaust pipe 206 to the inner side of the protective member 91, the chemical liquid components can be efficiently discharged to the outside of the chamber 201. In addition, a part of the chemical liquid components that collide with the droplets of water vapor adheres to the liquid film of the cleaning liquid formed on the upper surface of the substrate W, and is discharged from the substrate W together with the cleaning liquid. As a result, the chemical liquid components are discharged to the outside of the chamber 201 together with the cleaning liquid. In particular, during the cleaning process, it becomes a state in which it is relatively difficult to generate a chemical liquid atmosphere. That is, during the cleaning process, the chemical liquid atmosphere is not easy to increase. Therefore, during the cleaning process, by supplying water vapor to the lower space 2a of the chamber 201, the diffusion of the chemical liquid atmosphere can be more efficiently suppressed.

Next, the upper blow-out portion 32a is described with reference to FIG. 3 . As shown in FIG. 3 , the upper blow-out portion 32a is annular and extends along the upper end 9a of the protective member 91. The upper blow-out portion 32a is a tubular component, and superheated water vapor flows through the interior of the upper blow-out portion 32a. At least one blow-out port (not shown) is formed on the inner circumference of the upper blow-out portion 32a. The blow-out port is open, and the superheated water vapor flowing through the upper blow-out portion 32a is blown out from the blow-out port of the upper blow-out portion 32a toward the upper surface of the substrate W.

In addition, the structure of the lower blow-out portion 32b is the same as that of the upper blow-out portion 32a. Specifically, the lower blow-out portion 32b is annular and extends along the inner circumference of the protective member 91. The lower blow-out portion 32b is a tubular component, and the superheated water vapor flows through the interior of the lower blow-out portion 32b. At least one blow-out port (not shown) is formed on the inner circumference of the lower blow-out portion 32b. The blow-out port is open, and the superheated water vapor flowing through the lower blow-out portion 32b is blown out from the blow-out port of the lower blow-out portion 32b to the lower surface of the substrate W.

According to this embodiment, since the upper blow-out portion 32a is annular, a plurality of blow-out ports are formed in the upper blow-out portion 32a, so that superheated water vapor can be supplied to the upper surface of the substrate W from a plurality of directions. Therefore, the temperature drop of the substrate W can be effectively suppressed. However, the number of blow-out ports of the upper blow-out portion 32a may also be one.

Similarly, since the lower blow-out portion 32b is annular, a plurality of blow-out ports are formed in the lower blow-out portion 32b, so that superheated water vapor can be supplied to the lower surface of the substrate W from a plurality of directions. Therefore, the temperature drop of the substrate W can be effectively suppressed. However, the number of blow-out ports of the lower blow-out portion 32b can also be one.

Furthermore, according to the present embodiment, for example, compared with a case where the upper blowing portion 32a is composed of a plurality of nozzles arranged along the circumference, the substrate processing device 100 is simple in structure and easy to manufacture. Similarly, compared with a case where the lower blowing portion 32b is composed of a plurality of nozzles arranged along the circumference, the substrate processing device 100 is simple in structure and easy to manufacture. However, the upper blowing portion 32a may also be composed of at least one nozzle. Similarly, the lower blowing portion 32b may also be composed of at least one nozzle.

Next, referring to FIG. 4 , the substrate processing device 100 of the present embodiment is described. FIG. 4 is another cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing device 100 of the present embodiment. Specifically, FIG. 4 shows the interior of the substrate processing unit 2 viewed from the bottom.

As shown in FIG. 4 , the first blowing part 31 is annular. The first blowing part 31 is a tubular component, and the superheated water vapor flows through the inside of the first blowing part 31. At least one blowing outlet (not shown) is formed on the lower surface side of the first blowing part 31. The blowing outlet is an opening, and the superheated water vapor flowing through the first blowing part 31 is blown downward from the blowing outlet of the first blowing part 31.

The structure of the fourth blowing part 34 is the same as that of the first blowing part 31. Specifically, the fourth blowing part 34 is annular. The fourth blowing part 34 is a tubular component, and water vapor flows through the inside of the fourth blowing part 34. At least one blowing outlet (not shown) is formed on the lower surface side of the fourth blowing part 34. The blowing outlet is an opening, and the water vapor flowing through the fourth blowing part 34 is blown out downward from the blowing outlet of the fourth blowing part 34.

According to this embodiment, since the first blowing part 31 is annular, a plurality of blowing outlets are formed in the first blowing part 31, so that the superheated water vapor can be uniformly supplied to the lower space 2a of the chamber 201. However, the number of blowing outlets of the first blowing part 31 can also be one.

Similarly, since the fourth blowing section 34 is annular, a plurality of blowing outlets are formed in the fourth blowing section 34, so that water vapor can be uniformly supplied to the lower space 2a of the chamber 201. However, the number of blowing outlets of the fourth blowing section 34 may also be one.

Furthermore, according to this embodiment, for example, compared with the case where the first blowing part 31 is composed of a plurality of nozzles, the structure of the substrate processing device 100 is simple and easy to manufacture. Similarly, compared with the case where the fourth blowing part 34 is composed of a plurality of nozzles, the structure of the substrate processing device 100 is simple and easy to manufacture. However, the first blowing part 31 may also be composed of at least one nozzle. Similarly, the fourth blowing part 34 may also be composed of at least one nozzle.

In addition, in this embodiment, the fourth blowing part 34 is arranged inside the first blowing part 31, but the fourth blowing part 34 may also be arranged outside the first blowing part 31. In addition, when the first blowing part 31 and the fourth blowing part 34 are respectively constituted by a plurality of nozzles, for example, the nozzles of the first blowing part 31 and the nozzles of the fourth blowing part 34 may also be arranged alternately along the circumference.

As shown in FIG. 4 , the third blowing portion 33 extends along the side wall 203 of the chamber 201. The third blowing portion 33 is a tubular component, and the superheated water vapor flows through the inside of the third blowing portion 33. At least one blowing outlet (not shown) is formed in the third blowing portion 33. The blowing outlet is an opening. Specifically, the blowing outlet of the third blowing portion 33 opens toward the inner surface of the side wall 203. The superheated water vapor flowing through the third blowing portion 33 is blown out from the blowing outlet of the third blowing portion 33 toward the side wall 203 of the chamber 201.

According to this embodiment, since the third blowing portion 33 extends along the side wall 203 of the chamber 201, the third blowing portion 33 forms a plurality of blowing outlets, so that the inner peripheral surface of the side wall 203 can be uniformly supplied with superheated water vapor. However, the number of blowing outlets of the third blowing portion 33 may also be one.

Furthermore, according to this embodiment, for example, compared with the case where the third blowing part 33 is composed of a plurality of nozzles arranged along the side wall 203 of the chamber 201, the structure of the substrate processing device 100 is simple, and the substrate processing device 100 is easy to manufacture. However, the third blowing part 33 may also be composed of at least one nozzle.

Next, referring to FIG. 4 and FIG. 5 , the substrate processing apparatus 100 of the present embodiment will be further described. FIG. 5 is a diagram showing the structure of the substrate processing apparatus 100 of the present embodiment. As shown in FIG. 4 , the substrate processing apparatus 100 further includes a water vapor supply unit 300. The water vapor supply unit 300 supplies superheated water vapor to the first blow-out unit 31 and the third blow-out unit 33. In addition, the water vapor supply unit 300 supplies water vapor to the fourth blow-out unit 34. Furthermore, as shown in FIG. 5 , the water vapor supply unit 300 supplies superheated water vapor to the second blow-out unit 32 (upper blow-out unit 32a and lower blow-out unit 32b).

As shown in FIG4 , the steam supply section 300 has a steam generation section 300A, a first steam pipe 311, a first superheated steam valve 312, a first flow control valve 313, and a superheated steam generation heater 303. As shown in FIG5 , the steam supply section 300 further has a second steam pipe 321 and a second superheated steam valve 322. As shown in FIG4 , the steam supply section 300 further has a third steam pipe 331, a third superheated steam valve 332, a fourth steam pipe 341, a steam valve 342, and a second flow control valve 343.

The water vapor generating section 300A is accommodated in the fluid box 10A described with reference to FIG. 1. The first superheated water vapor valve 312, the first flow control valve 313, the superheated water vapor generating heater 303, the second superheated water vapor valve 322, the third superheated water vapor valve 332, the water vapor valve 342 and the second flow control valve 343 are accommodated in the fluid box 10B described with reference to FIG. 1. The first water vapor piping 311, the second water vapor piping 321, the third water vapor piping 331 and a part of the fourth water vapor piping 341 are accommodated in the chamber 201.

The water vapor generating section 300A generates water vapor. As shown in FIG4 , the water vapor generated from the water vapor generating section 300A flows into the first water vapor piping 311 and the fourth water vapor piping 341. Specifically, the water vapor generating section 300A has a storage section 301 and a water vapor generating heater 302. The storage section 301 stores pure water. The water vapor generating heater 302 heats the pure water stored in the storage section 301 to generate water vapor. One end of the first water vapor piping 311 and one end of the fourth water vapor piping 341 are connected to the storage section 301. The operation of the water vapor generating heater 302 is controlled by the control device 101 (control section 102).

The other end of the first steam pipe 311 is connected to the first blowing section 31. The first superheated steam valve 312, the first flow control valve 313 and the superheated steam generating heater 303 are installed in the first steam pipe 311.

The first steam pipe 311 is a tubular component for the circulation of steam and superheated steam. The superheated steam generating heater 303 heats the steam flowing from the storage unit 301 into the first steam pipe 311 to generate superheated steam. The superheated steam flows through the first steam pipe 311 and flows into the first blowing unit 31.

The first superheated water vapor valve 312 is an on-off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the first superheated water vapor valve 312. The actuator of the first superheated water vapor valve 312 is, for example, an air pressure actuator or an electric actuator. By opening the first superheated water vapor valve 312, superheated water vapor flows through the first water vapor pipe 311 to the first blow-out section 31, and superheated water vapor is supplied to the first blow-out section 31. By closing the first superheated water vapor valve 312, the supply of superheated water vapor to the first blow-out section 31 is stopped.

The first flow control valve 313 controls the flow of superheated steam flowing through the first steam pipe 311. Specifically, the first flow control valve 313 can control the opening, and the flow of superheated steam flowing through the first steam pipe 311 becomes the size corresponding to the opening of the first flow control valve 313. The actuator of the first flow control valve 313 is, for example, an electric actuator. The first flow control valve 313 can also be, for example, a motor needle valve. The opening of the first flow control valve 313 is controlled by the control device 101 (control unit 102).

As shown in FIG5 , one end of the second steam pipe 321 is connected to the first steam pipe 311 at the downstream side of the superheated steam generating heater 303. The other end of the second steam pipe 321 is connected to the second blow-out section 32. The second steam pipe 321 is a tubular component, and the superheated steam flows from the first steam pipe 311 to the second steam pipe 321. The superheated steam flows through the second steam pipe 321 and flows into the second blow-out section 32.

The second superheated water vapor valve 322 is installed in the second water vapor piping 321. The second superheated water vapor valve 322 is an on-off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the second superheated water vapor valve 322. The actuator of the second superheated water vapor valve 322 is, for example, an air pressure actuator or an electric actuator. By opening the second superheated water vapor valve 322, superheated water vapor flows through the second water vapor piping 321 to the second blow-out section 32, and superheated water vapor is supplied to the second blow-out section 32. By closing the second superheated water vapor valve 322, the supply of superheated water vapor to the second blow-out section 32 is stopped.

In this embodiment, the second steam pipe 321 includes a first pipe 321a and a second pipe 321b. The second superheated steam valve 322 includes a first valve 322a and a second valve 322b.

One end of the first pipe 321a of the second water vapor pipe 321 is connected to the first water vapor pipe 311 at the downstream side of the superheated water vapor generating heater 303. The other end of the first pipe 321a of the second water vapor pipe 321 is connected to the upper blowing portion 32a. The superheated water vapor flowing from the first water vapor pipe 311 to the first pipe 321a of the second water vapor pipe 321 flows through the first pipe 321a of the second water vapor pipe 321 and flows into the upper blowing portion 32a.

The first valve 322a is installed in the first pipe 321a of the second steam pipe 321. When the first valve 322a is opened, the superheated steam flows through the first pipe 321a of the second steam pipe 321 to the upper blow-out portion 32a, and the superheated steam is supplied to the upper blow-out portion 32a. When the first valve 322a is closed, the supply of superheated steam to the upper blow-out portion 32a is stopped.

One end of the second pipe 321b of the second water vapor pipe 321 is connected to the first pipe 321a of the second water vapor pipe 321 at the upstream side of the first valve 322a. The other end of the second pipe 321b of the second water vapor pipe 321 is connected to the lower blow-out portion 32b. The superheated water vapor flowing from the first pipe 321a of the second water vapor pipe 321 to the second pipe 321b of the second water vapor pipe 321 flows through the second pipe 321b of the second water vapor pipe 321 and flows into the lower blow-out portion 32b.

The second valve 322b is installed in the second pipe 321b of the second steam pipe 321. When the second valve 322b is opened, the superheated steam flows through the second pipe 321b of the second steam pipe 321 to the lower blow-out section 32b, and the superheated steam is supplied to the lower blow-out section 32b. When the second valve 322b is closed, the supply of superheated steam to the lower blow-out section 32b is stopped.

As shown in FIG. 4 , one end of the third steam pipe 331 is connected to the first steam pipe 311 at the downstream side of the superheated steam generating heater 303. The other end of the third steam pipe 331 is connected to the third blow-out section 33. The third steam pipe 331 is a tubular component, and the superheated steam flows from the first steam pipe 311 to the third steam pipe 331. The superheated steam flows through the third steam pipe 331 and flows into the third blow-out section 33.

The third superheated water vapor valve 332 is installed in the third water vapor piping 331. The third superheated water vapor valve 332 is an on-off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the third superheated water vapor valve 332. The actuator of the third superheated water vapor valve 332 is, for example, an air pressure actuator or an electric actuator. By opening the third superheated water vapor valve 332, superheated water vapor flows through the third water vapor piping 331 to the third blow-out section 33, and superheated water vapor is supplied to the third blow-out section 33. By closing the third superheated water vapor valve 332, the supply of superheated water vapor to the third blow-out section 33 is stopped.

The other end of the fourth steam pipe 341 is connected to the fourth blow-out section 34. The fourth steam pipe 341 is provided with a steam valve 342 and a second flow control valve 343.

The fourth water vapor pipe 341 is a tubular component for the circulation of water vapor. The water vapor flowing from the storage section 301 into the fourth water vapor pipe 341 flows through the fourth water vapor pipe 341 and flows into the fourth blowing section 34.

The steam valve 342 is an on-off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the steam valve 342. The actuator of the steam valve 342 is, for example, an air pressure actuator or an electric actuator. When the steam valve 342 is opened, the steam flows through the fourth steam pipe 341 to the fourth blow-out section 34, and the steam is supplied to the fourth blow-out section 34. When the steam valve 342 is closed, the supply of steam to the fourth blow-out section 34 is stopped.

The second flow control valve 343 controls the flow of water vapor flowing through the fourth water vapor pipe 341. Specifically, the second flow control valve 343 can control the opening, and the flow of water vapor flowing through the fourth water vapor pipe 341 becomes the size corresponding to the opening of the second flow control valve 343. The actuator of the second flow control valve 343 is, for example, an electric actuator. The second flow control valve 343 can also be, for example, a motor needle valve. The opening of the second flow control valve 343 is controlled by the control device 101 (control unit 102).

Next, referring to FIG. 6 , the first chemical liquid supply unit 62 is described. FIG. 6 is a diagram showing the structure of the first chemical liquid supply unit 62 included in the substrate processing apparatus 100 of this embodiment. As shown in FIG. 6 , the first chemical liquid supply unit 62 may further include a heater 643 in addition to the first chemical liquid supply pipe 621, the first component on-off valve 631, and the second component on-off valve 632 described with reference to FIG. 2 . The heater 643 is installed in the first pipe 621a of the first chemical liquid supply pipe 621. For example, the heater 643 is installed in the first pipe 621a of the first chemical liquid supply pipe 621 on the upstream side of the first component on-off valve 631. The heater 643 heats the sulfuric acid flowing through the first pipe 621a of the first liquid supply pipe 621.

Next, referring to FIG. 1 to FIG. 7 , the substrate processing method of this embodiment is described. The substrate processing method of this embodiment is performed, for example, by the substrate processing device 100 described with reference to FIG. 1 to FIG. 6 . FIG. 7 is a flow chart showing the substrate processing method of this embodiment. Specifically, FIG. 7 shows the processing flow of the control device 101 (control unit 102).

As shown in FIG. 7 , the substrate treatment method of this embodiment includes steps S1 to S6. In addition, as described with reference to FIG. 2 , during the execution of the treatment shown in FIG. 7 , the control device 101 (control unit 102) controls the air supply mechanism 3 to send air into the chamber 201. Therefore, a downward flow is generated in the space 2a below the chamber 201.

When the process shown in FIG. 7 starts, the control device 101 (control unit 102) first controls the central robot CR to move the substrate W into the lower space 2a of the chamber 201 (step S1). The control device 101 (control unit 102) controls the rotary chuck 4 to hold the substrate W moved in by the central robot CR (step S2). As a result, the substrate W is held in the chamber 201 by the rotary chuck 4.

When the rotary chuck 4 holds the substrate W, the control device 101 (control unit 102) controls the substrate processing unit 2 to perform substrate processing (step S3). Specifically, the control device 101 (control unit 102) controls the substrate processing unit 2 to supply SPM, hydrogen peroxide, cleaning liquid, and SC1 to the substrate W in the order of SPM, hydrogen peroxide, cleaning liquid, SC1, and cleaning liquid.

Furthermore, the control device 101 (control unit 102) performs water vapor processing on the substrate processing unit 2 in parallel with the substrate processing (step S4). For example, the control device 101 (control unit 102) blows superheated water vapor from the first blowing unit 31 to the lower space 2a of the chamber 201 while sending air into the chamber 201 through the air supply mechanism 3. Specifically, the control device 101 (control unit 102) blows superheated water vapor from the first blowing unit 31 during the SPM processing.

When the substrate processing is completed, the control device 101 (control unit 102) controls the rotary chuck 4 to release the substrate W (step S5). When the rotary chuck 4 releases the substrate W, the control device 101 (control unit 102) controls the central robot CR to move the substrate W out of the chamber 201 (step S6). As a result, the processing shown in Figure 7 is completed.

Next, referring to FIG. 1 to FIG. 15 , the substrate processing (step S3) and the water vapor processing (step S4) shown in FIG. 7 are explained. FIG. 8 is a flow chart showing the substrate processing (step S3) and the water vapor processing (step S4) included in the substrate processing method of the present embodiment. FIG. 9 is a diagram schematically showing the substrate processing section 2 during preheating. FIG. 10 is a diagram schematically showing the substrate processing section 2 during SPM processing. FIG. 11 is a diagram schematically showing the substrate processing section 2 during immersion processing. FIG. 12 is a diagram schematically showing the substrate processing section 2 during the treatment of substrate W by hydrogen peroxide. FIG. 13 is a diagram schematically showing the substrate processing section 2 during the cleaning treatment. FIG. 14 is a diagram schematically showing the substrate processing section 2 during the treatment of substrate W by SC1. FIG. 15 is a schematic diagram showing the substrate processing section 2 during the drying process.

As shown in FIG8 , after starting the substrate processing, the control device 101 (control unit 102) first controls the substrate heating unit 20 to heat the substrate W (step S31). That is, the substrate W is heated before performing the SPM processing. By heating the substrate W in advance, the stripping efficiency of the anti-etchant film of the SPM is improved.

Specifically, as shown in FIG. 9 , the control device 101 (control unit 102) controls the power supply unit 23 to energize the heater embedded in the heating member 21. As a result, the heating member 21 is heated. Furthermore, the control device 101 (control unit 102) controls the heater lifting unit 24 to raise the heating member 21 from the second lower position to the second upper position.

Here, the second lower position is the position where the heating member 21 is close to the upper surface of the rotating base 41. The second lower position may also be the position where the heating member 21 contacts the upper surface of the rotating base 41. The second upper position is the position where the heating member 21 is close to the lower surface of the substrate W. After the heating member 21 is arranged at the second upper position, the substrate W is heated by the radiation heat from the heating member 21. In addition, during pre-heating, superheated water vapor and water vapor are not supplied to the lower space 2a of the chamber 201.

After the control device 101 (control unit 102) preheats the substrate W for a preset time, it controls the rotary motor unit 5 to start rotating the substrate W held on the rotary chuck 4 (see FIG. 10 ). In addition, the control device 101 (control unit 102) controls the first nozzle moving mechanism 61 to move the first nozzle 6 to the processing position. Specifically, the first nozzle 6 moves to a position opposite to the center of the substrate W (see FIG. 10 ).

After the rotation speed of the substrate W reaches the preset rotation speed, the control device 101 (control unit 102) controls the first liquid supply unit 62 to spray SPM from the first nozzle 6 to the rotating substrate W (step S32). As a result, as shown in FIG. 10 , SPM is supplied to the upper surface of the rotating substrate W, and a liquid film of SPM is formed on the upper surface of the substrate W. That is, the control device 101 (control unit 102) controls the rotation speed of the substrate W when spraying SPM, and forms a liquid film of SPM on the upper surface of the substrate W.

Furthermore, the control device 101 (control unit 102) performs the first superheated water vapor treatment (step S41) when spraying SPM. Specifically, as shown in FIG. 10, the control device 101 (control unit 102) controls the water vapor supply unit 300 described in reference to FIG. 4 and FIG. 5 to blow out superheated water vapor from the first blowing unit 31. As described above, the stripping efficiency of the anti-corrosive agent of SPM can be improved. In addition, the diffusion of the chemical liquid atmosphere can be suppressed by superheated water vapor.

The timing of starting to blow out superheated steam from the first blowing portion 31 may be before the start of the SPM spraying, or may be the same as the start of the SPM spraying. Alternatively, the timing of starting to blow out superheated steam from the first blowing portion 31 may be after the start of the SPM spraying. The control device 101 (control unit 102) may also blow out superheated steam from the first blowing portion 31 continuously or intermittently.

The control device 101 (control unit 102) may blow out superheated steam from the first blowing unit 31 only before the start of the SPM spraying, or may blow out superheated steam from the first blowing unit 31 only when the SPM spraying starts. Alternatively, the control device 101 (control unit 102) may blow out superheated steam from the first blowing unit 31 during the period from the start of the SPM spraying to the end of the spraying, which is shorter than the period from the start of the SPM spraying to the end of the spraying.

In addition, as shown in FIG. 10 , the control device 101 (control unit 102) can also control the heater lifting unit 24 before the start of the SPM spraying, so that the heating member 21 is lowered from the second upper position to the second lower position.

After a preset time has passed since the start of SPM spraying, the control device 101 (control unit 102) controls the first liquid supply unit 62 to stop spraying SPM. In addition, the control device 101 (control unit 102) controls the rotation speed of the substrate W through the rotary motor unit 5 to form an immersed state in which the liquid film of SPM is supported on the upper surface of the substrate W (step S33). For example, the control device 101 (control unit 102) can also stop the rotation of the substrate W to form an immersed state (refer to Figure 11). Alternatively, the control device 101 (control unit 102) can also rotate the substrate W at a low speed to form an immersed state. By forming an immersed state, the stripping efficiency of the anti-etching agent of SPM can be improved.

When the immersion state is formed (immersion treatment), the control device 101 (control unit 102) performs the second superheated water vapor treatment (step S42). Specifically, as shown in FIG. 11, the control device 101 (control unit 102) controls the water vapor supply unit 300 described with reference to FIG. 4 and FIG. 5 to blow out superheated water vapor from the first blowing unit 31 and blow out superheated water vapor from the second blowing unit 32 (upper blowing unit 32a and lower blowing unit 32b). That is, while the superheated water vapor is continuously supplied from the first blowing unit 31, the superheated water vapor is blown out from the second blowing unit 32 toward the substrate W held on the spin chuck 4. As described above, the stripping efficiency of the anti-etching agent of the SPM can be improved. Furthermore, the diffusion of the liquid chemical atmosphere can be suppressed by superheated water vapor.

In addition, since a liquid film of SPM is formed on the upper surface of the substrate W, the substrate W can be heated directly from the upper surface side of the substrate W. In contrast, in this embodiment, during the immersion treatment, superheated water vapor is supplied from the lower blow-out section 32b to the lower surface of the substrate W. Therefore, the substrate W can be directly heated by the superheated water vapor. Therefore, the anti-etching agent film can be stripped more efficiently.

In addition, as shown in FIG. 11 , the control device 101 (control unit 102) can also control the heater lifting unit 24 when the immersed state is formed, so that the heating component 21 rises from the second lower position to the second upper position, and the substrate W is heated by the heating component 21.

When a preset time has passed since the immersion state was formed, the control device 101 (control unit 102) controls the rotary motor unit 5 to start rotating the substrate W held on the rotary chuck 4 (see FIG. 12 ). Alternatively, when a preset time has passed since the immersion state was formed, the control device 101 (control unit 102) controls the rotary motor unit 5 to increase the rotation speed of the substrate W.

When the rotation speed of the substrate W reaches the preset rotation speed, the control device 101 (control unit 102) controls the first liquid supply unit 62 to spray hydrogen peroxide from the first nozzle 6 to the rotating substrate W (step S34). As a result, as shown in FIG. 12, hydrogen peroxide is supplied to the upper surface of the rotating substrate W, and a liquid film of hydrogen peroxide is formed on the upper surface of the substrate W. That is, the control device 101 (control unit 102) controls the rotation speed of the substrate W when spraying hydrogen peroxide, and forms a liquid film of hydrogen peroxide on the upper surface of the substrate W. In detail, the SPM is discharged from the upper surface of the substrate W by the hydrogen peroxide, and the liquid film of the SPM is replaced by the liquid film of the hydrogen peroxide.

The control device 101 (control unit 102) performs the third superheated steam treatment (step S43) when spraying hydrogen peroxide. Specifically, as shown in FIG12, the control device 101 (control unit 102) controls the steam supply unit 300 described with reference to FIG4 and FIG5 to stop supplying superheated steam from the second blowing unit 32 (upper blowing unit 32a and lower blowing unit 32b), and reduce the flow rate of superheated steam blown out from the first blowing unit 31.

Specifically, the control device 101 (control unit 102) blows out superheated water vapor at a first flow rate from the first blowing unit 31 during SPM treatment and immersion treatment, and blows out superheated water vapor at a second flow rate less than the first flow rate from the first blowing unit 31 when spraying hydrogen peroxide. The control device 101 (control unit 102) adjusts the flow rate of the superheated water vapor by controlling the first flow control valve 313 shown in FIG. 4.

In addition, as shown in FIG. 12 , the control device 101 (control unit 102) can also heat the substrate W by means of the heating component 21 when spraying hydrogen peroxide.

Hydrogen peroxide may oxidize the substrate W. In particular, the higher the temperature of the hydrogen peroxide, the easier it is for the substrate W to be oxidized. Furthermore, the higher the temperature of the substrate W, the easier it is for the substrate W to be oxidized. In contrast, according to this embodiment, when spraying hydrogen peroxide, the amount of superheated water vapor supplied to the lower space 2a of the chamber 201 can be reduced. As a result, the temperature rise of the hydrogen peroxide caused by the superheated water vapor is suppressed, and since the temperature of the substrate W is easily reduced, the oxidation of the substrate W by the hydrogen peroxide can be suppressed.

Furthermore, when hydrogen peroxide is sprayed, a large amount of smoke is generated from the substrate W. Furthermore, when hydrogen peroxide is sprayed, smoke is easily generated from the nozzle of the first nozzle 6. According to this embodiment, by supplying superheated water vapor when hydrogen peroxide is sprayed, the diffusion of smoke can be suppressed.

Furthermore, when hydrogen peroxide is sprayed, hydrogen peroxide at room temperature is sprayed onto the substrate W on which the high-temperature SPM liquid film is formed. As a result, a temperature gradient is generated within the surface of the substrate W, and the substrate W vibrates. In contrast, according to this embodiment, the generation of the temperature gradient can be suppressed by supplying superheated water vapor when hydrogen peroxide is sprayed. Therefore, the vibration of the substrate W can be suppressed.

The control device 101 (control unit 102) controls the first liquid supply unit 62 to stop spraying hydrogen peroxide after a preset time has passed since the start of spraying hydrogen peroxide. In addition, the control device 101 (control unit 102) controls the first nozzle moving mechanism 61 to make the first nozzle 6 retreat to the first retreat area.

After the control device 101 (control unit 102) makes the first nozzle 6 retreat to the first retreat area, it controls the cleaning liquid supply unit 82 to spray the cleaning liquid from the third nozzle 8 to the rotating substrate W while rotating the substrate W held on the rotating chuck 4 (step S35). As a result, as shown in FIG. 13, the cleaning liquid is supplied to the upper surface of the rotating substrate W, and a liquid film of the cleaning liquid is formed on the upper surface of the substrate W. That is, when spraying the cleaning liquid, the control device 101 (control unit 102) controls the rotation speed of the substrate W to form a liquid film of the cleaning liquid on the upper surface of the substrate W. In detail, hydrogen peroxide is discharged from the upper surface of the substrate W by the cleaning liquid, and the liquid film of hydrogen peroxide is replaced by a liquid film of the cleaning liquid.

When the cleaning liquid is sprayed, the control device 101 (control unit 102) supplies water vapor to the lower space 2a of the chamber 201 while air is being supplied to the lower space 2a of the chamber 201 by the air supply mechanism 3 (step S44). Specifically, as shown in FIG13, the control device 101 (control unit 102) controls the water vapor supply unit 300 described with reference to FIG4 and FIG5 to blow out water vapor from the fourth blow-out unit 34. In addition, when hydrogen peroxide is sprayed (step S34), when superheated water vapor is supplied from the first blow-out unit 31, the control device 101 (control unit 102) controls the water vapor supply unit 300 described with reference to FIG4 and FIG5 to stop supplying superheated water vapor from the first blow-out unit 31 when the cleaning liquid is sprayed.

According to this embodiment, as described above, during the cleaning process, by supplying water vapor to the lower space 2a of the chamber 201, the diffusion of the chemical liquid atmosphere can be more effectively suppressed. In addition, as shown in FIG. 13, the control device 101 (control unit 102) can also control the heater lifting unit 24 before the start of the spraying of the cleaning liquid, so that the heating member 21 is lowered from the second upper position to the second lower position. In this way, the cleaning liquid is not easy to evaporate from the upper surface of the substrate W.

The control device 101 (control unit 102) controls the cleaning liquid supply unit 82 to stop spraying the cleaning liquid after a preset time has passed since the start of spraying the cleaning liquid. After stopping spraying the cleaning liquid, the control device 101 (control unit 102) controls the second nozzle moving mechanism 71 to move the second nozzle 7 from the second retreat area to a position opposite to the center of the substrate W.

After the second nozzle 7 moves to a position opposite to the center of the substrate W, the control device 101 (control unit 102) controls the second liquid supply unit 72 and the second nozzle moving mechanism 71 to perform a half-scan process while rotating the substrate W held on the rotary chuck 4. Specifically, while the second nozzle 7 is moved from a position opposite to the center of the substrate W to a position opposite to the periphery of the substrate W, SC1 is ejected from the second nozzle 7 toward the rotating substrate W (step S36). As a result, the cleaning liquid is discharged from the upper surface of the substrate W by SC1, and the substrate W is processed by SC1.

The control device 101 (control unit 102) performs the fourth superheated steam treatment (step S45) when spraying SC1. Specifically, as shown in FIG. 14, the control device 101 (control unit 102) controls the steam supply unit 300 described with reference to FIG. 4 and FIG. 5 to blow out superheated steam from the first blowing unit 31.

Since SC1 is supplied to the substrate W by the half scanning process, the central area of the substrate W becomes easy to dry during the period when the second nozzle 7 moves from the position opposite to the center of the substrate W to the position opposite to the peripheral portion of the substrate W. Similarly, during the period when the second nozzle 7 moves from the position opposite to the peripheral portion of the substrate W to the position opposite to the center of the substrate W, the peripheral portion of the substrate W becomes easy to dry. In contrast, according to this embodiment, since superheated water vapor is supplied when SC1 is sprayed, the humidity of the lower space 2a can be kept high. Therefore, the substrate W is not easy to dry when SC1 is sprayed. In addition, as shown in FIG. 14, when SC1 is sprayed, the heating member 21 is arranged at the second lower position. Therefore, the drying of the substrate W can be further suppressed.

Furthermore, according to this embodiment, since superheated water vapor is supplied when SC1 is sprayed, the temperature of SC1 supplied to the upper surface of substrate W can be increased. As a result, the main surface of substrate W becomes easily oxidized by SC1.

In addition, since the substrate W is in a state that is easy to dry when the SC1 is sprayed, the control device 101 (control unit 102) can also control the air supply mechanism 3 to reduce the wind speed of the downflow. By reducing the wind speed of the downflow, the substrate W is not easy to dry.

The control device 101 (control unit 102) controls the second liquid supply unit 72 to stop spraying SC1 after a preset time has passed since the start of spraying SC1. In addition, the control device 101 (control unit 102) controls the second nozzle moving mechanism 71 to make the second nozzle 7 retreat to the second retreat area.

After the control device 101 (control unit 102) causes the second nozzle 7 to retreat to the second retreat area, the third nozzle 8 sprays the cleaning liquid onto the rotating substrate W (step S37), similar to step S35. As a result, SC1 is discharged from the upper surface of the substrate W by the cleaning liquid, forming a liquid film of the cleaning liquid on the upper surface of the substrate W.

When the cleaning liquid is sprayed, the control device 101 (control unit 102) supplies water vapor to the lower space 2a of the chamber 201 (step S46), similarly to step S44. Furthermore, when the cleaning liquid is sprayed, the control device 101 (control unit 102) controls the water vapor supply unit 300 described with reference to FIG. 4 and FIG. 5 to stop supplying superheated water vapor from the first blowing unit 31.

According to this embodiment, as described above, by supplying water vapor when spraying the cleaning liquid, the chemical liquid atmosphere can be reduced. Furthermore, the cleaning liquid can be heated by water vapor.

In addition, when the wind speed of the downflow is weakened when spraying SC1, the control device 101 (control unit 102) controls the air supply mechanism 3 to restore the wind speed of the downflow when spraying the cleaning liquid.

After a preset time has passed since the start of spraying the cleaning liquid, the control device 101 (control unit 102) controls the cleaning liquid supply unit 82 to stop spraying the cleaning liquid. After stopping spraying the cleaning liquid, the control device 101 (control unit 102) controls the rotation speed of the substrate W by the rotary motor unit 5 to remove the cleaning liquid from the upper surface of the substrate W, and performs a drying process to dry the upper surface of the substrate W (step S38). As a result, the process shown in Figure 8 is completed.

Specifically, the control device 101 (control unit 102) controls the rotary motor unit 5 to rotate the substrate W at high speed. By rotating the substrate W at high speed, the cleaning liquid attached to the substrate W is shaken off and the substrate W is dried. Also, as shown in FIG. 15 , during the drying process, the control device 101 (control unit 102) controls the water vapor supply unit 300 described with reference to FIG. 4 and FIG. 5 to stop blowing water vapor from the fourth blowing unit 34.

According to this embodiment, since water vapor and superheated water vapor are not supplied to the lower space 2a of the chamber 201 during the drying process, the humidity of the chamber 201 can be reduced compared to the case where water vapor or superheated water vapor is supplied. Therefore, the substrate W can be dried efficiently.

Furthermore, according to this embodiment, water vapor is supplied when the cleaning liquid is sprayed (step S37) to increase the temperature of the cleaning liquid. As a result, the cleaning liquid evaporates easily during the drying process, and the substrate W can be dried efficiently.

Next, referring to FIG. 16 , the chamber cleaning method of this embodiment is described. FIG. 16 schematically shows the substrate processing unit 2 when the interior of the chamber 201 is cleaned.

The chamber cleaning method of this embodiment includes a step of cleaning the interior of the chamber 201. As shown in FIG16, the control device 101 (control unit 102) controls the water vapor supply unit 300 described with reference to FIG4 and FIG5 to blow water vapor from the fourth blowing unit 34 to the lower space 2a of the chamber 201, and blows superheated water vapor from the third blowing unit 33 to the inner wall surface of the side wall 203.

According to this embodiment, since water vapor is supplied to the lower space 2a of the chamber 201 when the inside of the chamber 201 is cleaned, the liquid medicine components floating in the lower space 2a of the chamber 201 can be efficiently discharged to the outside of the chamber 201. In addition, as described above, since superheated water vapor is supplied to the inner wall surface of the chamber 201 from the third blowing part 33 when the inside of the chamber 201 is cleaned, the inner wall surface of the chamber 201 is easily dried. Therefore, the inside of the chamber 201 can be dried efficiently.

When cleaning the interior of the chamber 201, the flow rate of water vapor supplied from the fourth blow-out section 34 may be greater than the flow rate of water vapor supplied from the fourth blow-out section 34 during the cleaning process (step S35 and step S37 of FIG. 8 ). By increasing the flow rate of water vapor, the liquid chemical components can be efficiently discharged to the outside of the chamber 201. In addition, the control device 101 (control section 102) adjusts the flow rate of water vapor by controlling the second flow control valve 343 shown in FIG. 4 .

Next, referring to FIG. 17 , a variation of the substrate processing apparatus 100 of the present embodiment will be described. FIG. 17 is a cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the variation of the substrate processing apparatus 100 of the present embodiment.

As shown in FIG. 17 , the substrate processing device 100 may also include a blocking portion 400. The blocking portion 400 may include a disc-shaped blocking plate 401, a support shaft 402, a support arm 403, and a lifting portion 404.

The blocking plate 401 is disposed between the rectifying plate 204 and the rotating chuck 4. Therefore, the blocking plate 401 is disposed above the substrate W held on the rotating chuck 4 and is opposite to the substrate W held on the rotating chuck 4. The diameter of the blocking plate 401 is larger than the diameter of the substrate W.

The blocking plate 401 is supported in a horizontal position by the support shaft 402. The support shaft 402 may extend in a substantially vertical direction, for example. The support shaft 402 is supported by the support arm 403.

The support arm 403 extends horizontally above the blocking plate 401. The lifting part 404 of the blocking part 400 moves the support arm 403 in the vertical direction. That is, the lifting part 404 of the blocking part 400 lifts and lowers the support arm 403. The blocking plate 401 is lifted and lowered by lifting and lowering the support arm 403. The lifting part 404 of the blocking part 400 is controlled by the control device 101 (control part 102). The lifting part 404 can, for example, have a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism. Specifically, the lifting part 404 of the blocking part 400 lifts and lowers the blocking plate 401 between the third upper position and the third lower position.

When the blocking plate 401 is arranged at the third lower position, the gap between the substrate W held on the rotary chuck 4 and the blocking plate 401 becomes such a size that the first nozzle 6 and the second nozzle 7 cannot enter between the substrate W held on the rotary chuck 4 and the blocking plate 401. The control device 101 (control unit 102) can arrange the blocking plate 401 at the third lower position, for example, when the substrate W is dried (step S38 of FIG. 8 ).

When the blocking plate 401 is arranged at the third upper position, the gap between the substrate W held on the rotary chuck 4 and the blocking plate 401 becomes a size that allows the first nozzle 6 and the second nozzle 7 to enter between the substrate W held on the rotary chuck 4 and the blocking plate 401. The control device 101 (control unit 102) can, for example, traverse the cleaning process (step S37 of FIG. 8 ) from the SPM process (step S32 of FIG. 8 ) to the drying process (step S38 of FIG. 8 ) before the cleaning process (step S37 of FIG. 8 ) to arrange the blocking plate 401 at the third upper position.

In addition, when the substrate processing device 100 is provided with a blocking portion 400, it is preferred that the diameters of the first blowing portion 31 and the fourth blowing portion 34 are larger than the diameter of the blocking plate 401.

The above has been described with reference to the drawings (FIG. 1 to FIG. 17) for the implementation of the present invention. However, the present invention is not limited to the above implementation, and can be implemented in various forms without departing from the scope of its main purpose. In addition, the multiple components disclosed in the above implementation can be appropriately changed. For example, a certain component of all the components shown in a certain implementation can be added to the components of other implementations, or some of the components of all the components shown in a certain implementation can be deleted from the implementation.

In order to facilitate the understanding of the invention, the drawings schematically show each component element on the main body, and there are cases where the thickness, length, number, spacing, etc. of each component element shown in the drawings are different from the actual ones for the convenience of making the drawings. In addition, the composition of each component element shown in the above-mentioned implementation form is an example and is not particularly limited. Various changes can be made within the scope of the effect of the invention in essence.

For example, in the embodiments described with reference to FIGS. 1 to 17 , the rotary chuck 4 is a clamping chuck in which a plurality of chuck components 42 are in contact with the peripheral end surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the rotary chuck 4 may be a vacuum chuck or a Bernoulli chuck.

In addition, in the embodiment described with reference to FIG. 1 to FIG. 17 , when hydrogen peroxide is sprayed, the control device 101 (control unit 102) reduces the flow rate of the superheated steam blown out from the first blow-out unit 31, but the control device 101 (control unit 102) may also stop blowing the superheated steam from the first blow-out unit 31 when hydrogen peroxide is sprayed.

In the embodiments described with reference to FIGS. 1 to 17 , the substrate heating unit 20 heats the substrate W by means of a heater, but the components used by the substrate heating unit 20 to heat the substrate W are not particularly limited as long as they can heat the substrate W. For example, the substrate heating unit 20 can also heat the substrate W by laser irradiation or light irradiation.

In addition, in the embodiments described with reference to FIGS. 1 to 17 , a substrate heating unit 20 is provided in the substrate processing device 100 , but the substrate heating unit 20 may be omitted. In this case, superheated water vapor may be blown out from the second blowing unit 32 for preheating.

In addition, in the embodiments described in reference to FIG. 1 to FIG. 17 , water vapor is supplied when the cleaning liquid is sprayed, but the supply of water vapor when the cleaning liquid is sprayed can also be omitted.

In addition, in the embodiments described with reference to FIGS. 1 to 17 , the first blowing portion 31 is in the shape of a ring, but the shape of the first blowing portion 31 is not particularly limited. For example, the first blowing portion 31 may be in the shape of a rectangular ring or in a winding shape. The same is true for the case where the first blowing portion 31 is composed of a plurality of nozzles, and the arrangement shape of the plurality of nozzles is not particularly limited.

Similarly, in the embodiments described with reference to FIGS. 1 to 17 , the fourth blowing portion 34 is annular, but the shape of the fourth blowing portion 34 is not particularly limited. The same is true for the case where the fourth blowing portion 34 is composed of a plurality of nozzles, and the arrangement shape of the plurality of nozzles is not particularly limited.

In addition, in the embodiments described in reference to FIGS. 1 to 17 , an immersion treatment is performed, but the immersion treatment may be omitted.

In addition, in the embodiment described with reference to FIGS. 1 to 17 , the second blowing portion 32 includes an upper blowing portion 32a and a lower blowing portion 32b, but the second blowing portion 32 may include only one of the upper blowing portion 32a and the lower blowing portion 32b.

In addition, in the embodiment described with reference to FIG. 1 to FIG. 17 , the substrate processing apparatus 100 is provided with the fourth blowing section 34 , but the fourth blowing section 34 may be omitted. In this case, the superheated water vapor generating heater 303 may be controlled to supply the superheated water vapor and water vapor from the first blowing section 31 in a mutually exclusive manner.

In addition, in the embodiment described with reference to FIG. 1 to FIG. 17 , the first blowing section 31 is arranged below the rectifying plate 204, but the first blowing section 31 may also be arranged above the rectifying plate 204. That is, the first blowing section 31 may also be arranged in the upper space 2b. In this case, the first blowing section 31 is arranged at a position where superheated water vapor can be blown to the lower space 2a through the through hole 204a of the rectifying plate 204. The third blowing section 33 and the fourth blowing section 34 may also be arranged above the rectifying plate 204.

In addition, in the embodiment described with reference to FIG. 1 to FIG. 17 , water vapor is supplied when the interior of the chamber 201 is cleaned, but superheated water vapor may also be supplied when the interior of the chamber 201 is cleaned. The superheated water vapor raises the temperature of the components disposed inside the chamber 201, thereby making it easier to clean the components disposed inside the chamber 201.

[Industrial availability]

The present invention is useful for devices for processing substrates and has industrial applicability.

2: Substrate processing unit

2a: Space below

2b: Upper space

3: Air supply mechanism

4: Rotating chuck

5: Rotating motor part

6: No. 1 nozzle

7: No. 2 nozzle

8: No. 3 nozzle

9: Liquid receiving part

9a: Top

20: Substrate heating unit

21: Heating components

22: Lifting shaft

23: Power Supply Department

24: Heater lifting part

31: The first blowing part

32: The second blowing part

32a: Upper blow-out section

32b: Lower blow-out section

33: The third blowing part

34: The fourth blowing part

41: Rotating base

42: Clamping plate components

51:shaft

52: Motor body

61: No. 1 nozzle moving mechanism

62: First liquid medicine supply unit

71: Second nozzle moving mechanism

72: Second liquid medicine supply unit

82: Cleaning fluid supply unit

91: Protective parts

92: Guidance Department

93: inclined part

94: Protective parts lifting part

100: Substrate processing device

101: Control device

102: Control Department

103: Memory Department

201: Chamber

202:Up the wall

202a: Air supply outlet

203: Side wall

204: Rectifier plate

204a: Through hole

205:Lower wall

206: Exhaust pipe

611: No. 1 nozzle arm

612: No. 1 nozzle base

613: No. 1 nozzle moving part

621: First liquid supply piping

621a: 1st piping

621b: Second piping

631: Component 1 open/close valve

632: Component 2 open/close valve

711: No. 2 nozzle arm

712: No. 2 nozzle base

713: Second nozzle moving part

721: Second liquid supply piping

731: Liquid opening and closing valve

821: Cleaning fluid supply piping

831: Cleaning fluid on/off valve

AX1: 1st rotation axis

AX2: Second rotation axis

AX3: 3rd rotation axis

CP: Connection part

SC1: mixed liquid

W: substrate

Claims (19)

A substrate processing device, comprising: a chamber for performing substrate processing; an air supply mechanism for supplying air into the chamber; a substrate holding portion for holding a substrate in the chamber; a substrate rotating portion for rotating the substrate held by the substrate holding portion; a first mixed liquid spraying portion, located in the chamber, spraying a first mixed liquid of sulfuric acid and hydrogen peroxide to the substrate rotated by the substrate rotating portion; a first superheated water vapor blowing portion, located between the air supply mechanism and the substrate held by the substrate holding portion, blowing superheated water vapor into the chamber; and a control portion, controlling the spraying of the first mixed liquid from the first mixed liquid spraying portion and the blowing of the superheated water vapor from the first superheated water vapor blowing portion; and When spraying the first mixed liquid, the control unit blows out the superheated steam from the first superheated steam blowing unit. The substrate processing device of claim 1 further comprises: a liquid receiving portion for receiving the first mixed liquid discharged from the substrate rotated by the substrate rotating portion; and a second superheated water vapor blowing portion supported by the liquid receiving portion for blowing the superheated water vapor toward the substrate held by the substrate holding portion. The substrate processing device as claimed in claim 1 further comprises: a liquid receiving portion for receiving the first mixed liquid discharged from the substrate rotated by the substrate rotating portion; and a second superheated water vapor blowing portion supported by the liquid receiving portion for blowing the superheated water vapor toward the substrate held by the substrate holding portion; and the control portion controls the blowing of the superheated water vapor from the second superheated water vapor blowing portion and the rotation of the substrate by the substrate rotating portion, when spraying the first mixed liquid, the control portion controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate, the control portion stops spraying the first mixed liquid and controls the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate, When the above-mentioned immersed state is formed, the above-mentioned control unit blows out the above-mentioned superheated water vapor from the above-mentioned first superheated water vapor blowing unit and the above-mentioned second superheated water vapor blowing unit. A substrate processing device as claimed in claim 2 or 3, wherein the second superheated water vapor blowing portion comprises: an upper superheated water vapor blowing portion that blows the superheated water vapor toward the upper surface of the substrate held on the substrate holding portion; and a lower superheated water vapor blowing portion that blows the superheated water vapor toward the lower surface of the substrate held on the substrate holding portion. The substrate processing device of claim 1, wherein the first mixed liquid spraying unit sprays the first mixed liquid and hydrogen peroxide mutually exclusively, and the control unit further controls the spraying of the hydrogen peroxide from the first mixed liquid spraying unit, and when the hydrogen peroxide is sprayed, the control unit stops blowing the superheated water vapor. The substrate processing device of claim 1, wherein the first mixed liquid spraying unit sprays the first mixed liquid and hydrogen peroxide mutually exclusively, the control unit further controls the spraying of the hydrogen peroxide from the first mixed liquid spraying unit, when spraying the first mixed liquid, the control unit blows out the superheated water vapor at a first flow rate from the first superheated water vapor blowing unit, when spraying the hydrogen peroxide, the control unit blows out the superheated water vapor at a second flow rate less than the first flow rate from the first superheated water vapor blowing unit. The substrate processing device of claim 1 further comprises: a second mixed liquid spraying unit that sprays a second mixed liquid mixed with ammonia water, hydrogen peroxide and pure water to the substrate rotated by the substrate rotating unit; the control unit further controls the spraying of the second mixed liquid from the second mixed liquid spraying unit, and when the second mixed liquid is to be sprayed, the control unit blows out the superheated water vapor. The substrate processing device as claimed in claim 1 further comprises: a cleaning liquid spraying unit that sprays cleaning liquid onto the substrate rotated by the substrate rotating unit; and a water vapor blowing unit that is located between the air supply mechanism and the substrate held by the substrate holding unit and blows water vapor into the chamber; and the control unit further controls the spraying of the cleaning liquid from the cleaning liquid spraying unit and the blowing of the water vapor from the water vapor blowing unit, and when spraying the cleaning liquid, the control unit blows out the water vapor. The substrate processing device of claim 8, wherein the control unit further controls the rotation of the substrate of the substrate rotating unit. After the control unit stops spraying the cleaning liquid, it controls the rotation speed of the substrate to perform a drying process to remove the cleaning liquid from the upper surface of the substrate and dry the upper surface of the substrate. When performing the drying process, the control unit stops blowing out the water vapor. The substrate processing device as claimed in claim 1 further comprises: a third superheated water vapor blowing unit, which blows superheated water vapor toward the inner wall surface of the chamber; and a water vapor blowing unit, which is located between the air supply mechanism and the substrate holding unit, and blows water vapor into the chamber; and the control unit controls the blowing of the water vapor from the water vapor blowing unit and the blowing of the superheated water vapor from the third superheated water vapor blowing unit, and the control unit blows out the water vapor from the water vapor blowing unit and blows out the superheated water vapor from the third superheated water vapor blowing unit when the interior of the chamber is cleaned. A substrate processing method, comprising: a holding step, in which a substrate is held in a chamber by a substrate holding part; a step of blowing out superheated water vapor, in which, while air is being supplied to the chamber by an air supply mechanism, superheated water vapor is blown into the chamber from a first superheated water vapor blowing part located between the air supply mechanism and the substrate held on the substrate holding part; and a first mixed liquid spraying step, in which the substrate held on the substrate holding part is rotated and a first mixed liquid of sulfuric acid and hydrogen peroxide is sprayed onto the rotating substrate; when spraying the first mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing part. The substrate processing method of claim 11 further includes an immersion step, wherein the spraying of the first mixed liquid is stopped, and the rotation speed of the substrate is controlled to form an immersion state in which the liquid film of the first mixed liquid is supported on the upper surface of the substrate; When the immersion state is formed, the superheated water vapor is blown out from the first superheated water vapor blowing part, and the superheated water vapor is blown out from the second superheated water vapor blowing part toward the substrate held on the substrate holding part, and the second superheated water vapor blowing part is supported on a liquid receiving part that receives the first mixed liquid discharged from the rotating substrate. The substrate processing method of claim 12, wherein the second superheated water vapor blowing section comprises: an upper superheated water vapor blowing section, which blows the superheated water vapor toward the upper surface of the substrate held on the substrate holding section; and a lower superheated water vapor blowing section, which blows the superheated water vapor toward the lower surface of the substrate held on the substrate holding section. The substrate processing method of claim 12 or 13 further comprises an extrusion step, wherein hydrogen peroxide is sprayed toward the rotating substrate to discharge the liquid film of the first mixed liquid from the upper surface of the substrate; When the hydrogen peroxide is sprayed, the blowing of the superheated water vapor is stopped. The substrate processing method of claim 12 or 13 further comprises an extrusion step, wherein hydrogen peroxide is sprayed toward the rotating substrate to discharge the liquid film of the first mixed liquid from the upper surface of the substrate; When spraying the first mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing part at a first flow rate; When spraying the hydrogen peroxide, the superheated water vapor is blown out from the first superheated water vapor blowing part at a second flow rate less than the first flow rate. The substrate processing method of claim 11 further comprises: a second mixed liquid spraying step, wherein the second mixed liquid mixed with ammonia water, hydrogen peroxide and pure water is sprayed onto the rotating substrate while the substrate held on the substrate holding portion is rotated; When spraying the second mixed liquid, the superheated water vapor is blown out from the first superheated water vapor blowing portion. The substrate processing method of claim 11 further comprises the following steps: While the air supply mechanism is supplying air into the chamber, water vapor is blown into the chamber from a water vapor blowing portion located between the air supply mechanism and the substrate held on the substrate holding portion; and While the substrate held on the substrate holding portion is rotated, a cleaning liquid is sprayed onto the rotating substrate; When spraying the cleaning liquid, the water vapor is blown out from the water vapor blowing portion. The substrate processing method of claim 17 further comprises: a drying step, wherein after stopping spraying the cleaning liquid, the rotation speed of the substrate is controlled to remove the cleaning liquid from the upper surface of the substrate to dry the upper surface of the substrate; During the drying step, the blowing of the water vapor is stopped. A chamber cleaning method includes the step of cleaning the interior of a chamber for substrate processing. When cleaning the interior of the chamber, superheated water vapor is blown toward the inner wall surface of the chamber, and water vapor is blown into the chamber from a water vapor blowing portion located between an air supply mechanism for supplying air into the chamber and a substrate holding portion for holding a substrate in the chamber.