TWI880415B - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus (100) includes a chamber (201), a substrate holding section (3), a processing space formation section (70), a substrate rotating section (4), a processing liquid supply section (600), and a superheated steam blowing section (8). The chamber (201) accommodates a substrate (W). The substrate holding section (3) holds the substrate (W) in the chamber (201). The processing space formation section (70) includes a facing member (72). The facing member (72) faces the substrate (W) held by the substrate holding section (3). The processing space formation section (70) forms a processing space in which the substrate (W) is to be processed. The substrate rotating section (4) rotates the substrate (W) heled by the substrate holding section (3). The processing liquid supply section (600) supplies a first mixed liquid (SPM) to the substrate (W) under rotation by the substrate rotating section (4). The first mixed liquid (SPM) is obtained by mixing sulfuric acid with hydrogen peroxide. The superheated steam blowing section (8) blows out superheated steam into the processing space.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing device and a substrate processing method.

It is known that there is a single-chip substrate processing device that uses SPM (sulfuric acid and hydrogen peroxide mixture) to process substrates one by one (for example, refer to Patent Document 1). This substrate processing device keeps the substrate horizontal while rotating, and sprays SPM on the upper surface of the rotating substrate.

The efficiency of SPM in removing the anti-etching agent depends on the temperature of the substrate. Specifically, the lower the temperature of the substrate, the lower the efficiency of removing the anti-etching agent. When SPM is first supplied to the substrate, the temperature of the substrate is roughly the same as the room temperature, and the temperature of the substrate rises by supplying SPM.

[Prior Art Literature]

[Patent Literature]

[Patent document 1] Japanese Patent Publication No. 2009-272548

However, since the temperature of the atmosphere around the substrate is lower than the temperature of SPM, in the structure in which the temperature of the substrate is raised by supplying SPM, it takes time to raise the temperature of the substrate, and the processing time becomes longer. If the processing period becomes longer, the consumption of SPM increases. Therefore, the consumption of sulfuric acid increases.

The present invention is made in view of the above-mentioned problem, and its purpose is to provide a substrate processing device and a substrate processing method that can reduce the consumption of sulfuric acid.

According to one aspect of the present invention, a substrate processing device includes a chamber, a substrate holding part, a processing space forming part, a substrate rotating part, a processing liquid supply part, and a superheated water vapor blowing part. The chamber accommodates a substrate. The substrate holding part holds the substrate in the chamber. The processing space forming part includes an opposing component. The opposing component faces the substrate held by the substrate holding part. The processing space forming part forms a processing space for processing the substrate. The substrate rotating part rotates the substrate held by the substrate holding part. The processing liquid supply part supplies a first mixed liquid mixed with sulfuric acid and hydrogen peroxide to the substrate rotated by the substrate rotating part. The superheated water vapor blowing part blows superheated water vapor into the processing space.

In a certain embodiment, the superheated water vapor blowing section includes a first superheated water vapor blowing section disposed above the substrate.

In a certain embodiment, the first superheated water vapor blowing portion is supported by the opposing component.

In a certain embodiment, the first superheated water vapor blowing section is included in the treatment liquid supply section.

In a certain embodiment, the processing space forming part further includes a liquid receiving part. The liquid receiving part receives the first mixed liquid discharged from the substrate rotated by the substrate rotating part. The superheated water vapor blowing part includes a second superheated water vapor blowing part supported by the liquid receiving part.

In a certain embodiment, the substrate processing device further includes a control unit. The control unit controls the supply of the first mixed liquid and the blowing of the superheated water vapor. The control unit blows out the superheated water vapor when supplying the first mixed liquid.

In a certain embodiment, the control unit further controls the rotation of the substrate of the substrate rotating unit. When supplying the first mixed liquid, the control unit controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate. The control unit stops supplying the first mixed liquid and controls the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate. When forming the immersed state, the control unit blows out the superheated water vapor.

In a certain embodiment, the processing liquid supply unit supplies the first mixed liquid and hydrogen peroxide to the substrate in a mutually exclusive manner. The control unit further controls the supply of the hydrogen peroxide. The control unit stops blowing the superheated water vapor when supplying the hydrogen peroxide.

In a certain embodiment, the processing liquid supply unit supplies the first mixed liquid and the hydrogen peroxide to the substrate mutually exclusively. The control unit further controls the supply of the hydrogen peroxide. When supplying the first mixed liquid, the control unit blows out the superheated water vapor at a first flow rate. When supplying the hydrogen peroxide, the control unit blows out the superheated water vapor at a second flow rate that is less than the first flow rate.

In a certain embodiment, the processing liquid supply unit supplies the second mixed liquid containing ammonia water, hydrogen peroxide and pure water to the substrate mutually exclusively with the first mixed liquid. The control unit further controls the supply of the second mixed liquid. The control unit blows out the superheated water vapor when supplying the second mixed liquid.

According to another aspect of the present invention, the substrate processing method includes the following steps: holding a substrate in a chamber by a substrate holding portion; forming a processing space for processing the substrate by a processing space forming portion including an opposing member opposing the substrate held by the substrate holding portion; and blowing superheated water vapor into the processing space.

In a certain embodiment, the substrate processing method further includes the following steps: a step of rotating the substrate held by the substrate holding portion; and a step of supplying a first mixed liquid of sulfuric acid and hydrogen peroxide to the rotating substrate. When supplying the first mixed liquid, the superheated water vapor is blown out.

In a certain embodiment, the substrate processing method further includes the following steps: when supplying the first mixed liquid, controlling the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate; and stopping supplying the first mixed liquid and controlling the rotation speed of the substrate to form an immersed state in which the liquid film is supported on the upper surface of the substrate. When the immersed state is formed, the superheated water vapor is blown out.

In a certain embodiment, the substrate processing method further includes the step of supplying hydrogen peroxide to the rotating substrate. When supplying the hydrogen peroxide, the blowing of the superheated water vapor is stopped.

In a certain embodiment, the substrate processing method further includes the step of supplying hydrogen peroxide to the rotating substrate. When supplying the first mixed liquid, the superheated water vapor is blown out at a first flow rate. When supplying the hydrogen peroxide, the superheated water vapor is blown out at a second flow rate that is less than the first flow rate.

In a certain embodiment, the substrate processing method further includes the following steps: rotating the substrate held by the substrate holding portion; and supplying a second mixed liquid containing ammonia water, hydrogen peroxide and pure water to the rotating substrate. When supplying the second mixed liquid, the superheated water vapor is blown out.

According to the substrate processing device and substrate processing method of the present invention, it is possible to reduce the consumption of sulfuric acid.

2: Substrate processing unit

3: Rotating chuck

4: Rotating motor part

5: Substrate heating unit

6: Nozzle

6a: Nozzle

6b: Nozzle

6c: Nozzle

8: Blowing section

8a: Blowing outlet

10A: Fluid box

10B: Fluid box

20: Mobile mechanism

21: Maintaining Department

22: Arms

23: Arm base

24: Lifting unit

31: Clamping plate components

32: Rotating base

41: Axis

42: Motor body

51: Heating component

52: Lifting shaft

53: Power Supply Department

54: Heater lifting part

61: No. 1 spray outlet

61b: No. 1 spray outlet

61c: No. 1 spray outlet

62: Second spray outlet

62b: Second spray outlet

62c: Second spray outlet

63: No. 3 spray outlet

63b: No. 3 spray outlet

63c: No. 3 spray outlet

64: No. 4 spray outlet

64b: No. 4 spray outlet

64c: No. 4 spray outlet

65b: No. 5 spray outlet

65c: No. 5 spray outlet

70: Processing space formation unit

71: Liquid receiving part

71a: Top

72: Blocking member

72a: Through hole

81: 1st blowing part

82: Second blowing section

100: Substrate processing device

101: Control device

102: Control Department

103: Memory Department

201: Chamber

202: Exhaust pipe

600: Fluid supply unit

610: First liquid medicine supply unit

610b: First liquid medicine supply unit

611: First liquid supply piping

611a: 1st piping

611b: Second piping

612b: First liquid supply piping

613: Component 1 open/close valve

614b: First liquid on/off valve

615: Component 2 open/close valve

616: Heater

616b: Heater

617: Heater

620: Second liquid medicine supply unit

620b: Second liquid medicine supply unit

621: Second liquid supply piping

622b: Second liquid supply piping

623: Liquid medicine opening and closing valve

624b: Second liquid on/off valve

630: Cleaning fluid supply unit

630b: The third liquid medicine supply unit

631: Cleaning fluid supply piping

632b: Third liquid supply piping

633: Cleaning fluid on/off valve

634b: Third liquid on/off valve

640: Gas supply unit

640b: Pure water supply department

641: Gas supply piping

642b:Pure water supply piping

643: Gas on/off valve

644b:Pure water on/off valve

650b: Gas supply unit

652b: Gas supply piping

654b: Gas on/off valve

711: Protective parts

712: Guidance Department

713: inclined part

714: Protective component lifting unit

721: Top cover

722: Side wall

800: Superheated water steam supply unit

800A: Water vapor generation unit

801: Storage Department

802: Steam generating heater

803: Superheated water vapor generating heater

811: 1st water vapor pipe

812: Superheated water steam valve

813: Flow control valve

821: Second steam pipe

AX: rotation axis

CP: Connection part

CR: Center robot

IR:Transmitter robot

LP: Loading port

S1~S8: Steps

S41~S48: Steps

S51~S54: Steps

SC1: mixed liquid

SPM: 1st mixed liquid

TW:Tower

W: Substrate

FIG1 is a schematic diagram of a substrate processing device according to an embodiment of the present invention.

FIG2 is a cross-sectional view schematically showing the structure of a substrate processing unit included in a substrate processing device of an embodiment of the present invention.

FIG3 is another cross-sectional view schematically showing the structure of the substrate processing unit included in the substrate processing device of the embodiment of the present invention.

FIG. 4 (a) is a top view of a nozzle included in a substrate processing device according to an embodiment of the present invention. FIG. 4 (b) is a diagram showing the structure of a fluid supply unit included in a substrate processing device according to an embodiment of the present invention.

FIG5 is a diagram showing the structure of the first blowing section and the superheated water vapor supply section included in the substrate processing device of the embodiment of the present invention.

FIG6 is a diagram showing the structure of a substrate processing device according to an embodiment of the present invention.

FIG7 is a flow chart showing a substrate processing method according to an embodiment of the present invention.

FIG8 is a flow chart showing the substrate processing and superheated water vapor processing included in the substrate processing method of the embodiment of the present invention.

Figure 9 is a schematic diagram showing the substrate processing section during pre-heating.

Figure 10 is a schematic diagram showing the substrate processing section during SPM processing.

Figure 11 is a schematic diagram showing the substrate processing section during immersion treatment.

FIG. 12 schematically shows a substrate processing section when a substrate is treated with hydrogen peroxide.

Figure 13 is a schematic diagram showing the substrate processing section during the cleaning process.

FIG. 14 schematically shows a substrate processing section when a substrate is processed by SC1.

Figure 15 is a schematic diagram showing the substrate processing section during the drying process.

FIG. 16 (a) is a top view of the nozzle included in the first variation of the substrate processing device of the embodiment of the present invention. (b) is a diagram showing the structure of the fluid supply unit included in the first variation of the substrate processing device of the embodiment of the present invention.

FIG. 17 (a) is a top view of the nozzle included in the second variation of the substrate processing device of the embodiment of the present invention. (b) is a diagram showing the structure of the fluid supply unit included in the second variation of the substrate processing device of the embodiment of the present invention.

FIG. 18 (a) is a bottom view of the nozzle included in the third variation of the substrate processing device of the embodiment of the present invention. (b) is a diagram showing the structure of the fluid supply unit included in the third variation of the substrate processing device of the embodiment of the present invention.

The following describes the implementation forms of the substrate processing device and substrate processing method of the present invention with reference to the drawings (FIG. 1 to FIG. 18(b)). However, the present invention is not limited to the following implementation forms, and can be implemented in various forms without departing from the scope of its main purpose. In addition, there are cases where the description of the parts that are repeated is appropriately omitted. In addition, in the drawings, the same reference symbol is marked for the same or equivalent parts, and the description is not repeated.

In the substrate processing device and substrate processing method of the present invention, various substrates such as semiconductor wafers, glass substrates for masks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks can be applied as the "substrates" to be processed. In the following, the implementation form of the present invention is mainly described by taking a disk-shaped semiconductor wafer as the substrate processing object, but the substrate processing device and substrate processing method of the present invention can also be applied to various substrates other than the above-mentioned semiconductor wafers. In addition, the shape of the substrate is not limited to a disk shape, and the substrate processing device and substrate processing method of the present invention can be applied to substrates of various shapes.

First, referring to FIG. 1 , the substrate processing device 100 of the present embodiment is described. FIG. 1 is a schematic diagram of the substrate processing device 100 of the present embodiment. Specifically, FIG. 1 is a schematic top view of the substrate processing device 100 of the present embodiment. The substrate processing device 100 processes the substrate W by a processing liquid. More specifically, the substrate processing device 100 is a single-chip device that processes the substrate W piece by piece.

As shown in FIG. 1 , the substrate processing device 100 has a plurality of substrate processing units 2, a fluid box 10A, a plurality of fluid boxes 10B, a plurality of loading ports LP, a carrier robot IR, a central robot CR, and a control device 101.

The loading ports LP are each stacked and hold a plurality of substrates W. In this embodiment, a mask (anti-etching agent film) with useless anti-etching agent is attached to each of the unprocessed substrates W (substrates W before processing).

The carrier robot IR transports the substrate W between the loading port LP and the central robot CR. The central robot CR transports the substrate W between the carrier robot IR and the processing unit 2. In addition, the following device structure can be set: a loading platform (passage) for temporarily loading the substrate W is set between the carrier robot IR and the central robot CR, and the substrate W is indirectly transferred between the carrier robot IR and the central robot CR through the loading platform.

A plurality of substrate processing units 2 form a plurality of towers TW (four towers TW in FIG. 1 ). The plurality of towers TW are arranged so as to surround the central robot CR when viewed from above. Each tower TW includes a plurality of processing units 2 stacked in upper and lower layers (three substrate processing units 2 in FIG. 1 ).

The fluid box 10A contains fluid. The fluid includes an inert gas and a processing liquid. The fluid boxes 10B correspond to one of the multiple towers TW. The inert gas and processing liquid in the fluid box 10A are supplied to all substrate processing units 2 included in the tower TW corresponding to the fluid box 10B through any fluid box 10B.

The inert gas is nitrogen, for example. The treatment liquid includes sulfuric acid (H ₂ SO ₄ ), hydrogen peroxide (H ₂ O ₂ ), ammonia (NH ₄ OH) and a cleaning liquid. In the present embodiment, the cleaning liquid is pure water. Pure water is, for example, deionized water (DIW). In addition, the cleaning liquid may be, for example, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10ppm to 100ppm). When the cleaning liquid is not pure water, the fluid in the fluid box 10A further includes pure water.

The substrate processing unit 2 supplies the processing liquid to the upper surface of the substrate W. Specifically, the substrate processing unit 2 supplies the sulfuric acid hydrogen peroxide mixture (SPM), hydrogen peroxide, cleaning liquid and SC1 to the substrate W in the order of SPM, hydrogen peroxide, cleaning liquid, SC1, cleaning liquid. The sulfuric acid hydrogen peroxide mixture is a mixture of sulfuric acid and hydrogen peroxide. SC1 is a mixture of ammonia water, hydrogen peroxide and pure water.

If SPM is supplied to the upper surface of substrate W, the anti-etching agent film (organic matter) is stripped from the upper surface of substrate W, and the anti-etching agent film is removed from the upper surface of substrate W. If SC1 is supplied to the upper surface of substrate W, particles attached to the upper surface of substrate W are removed. More specifically, the hydrogen peroxide contained in SC1 oxidizes the silicon on the main surface of substrate W and the silicon oxide is etched by ammonia, and various particles are removed by stripping. Therefore, the residues of the anti-etching agent film and the insoluble particles are stripped and removed by SC1.

The control device 101 controls the operation of each part of the substrate processing device 100. For example, the control device 101 controls the loading port LP, the carrier robot IR, the central robot CR and the substrate processing unit 2. The control device 101 includes a control unit 102 and a memory unit 103.

The control unit 102 controls the operation of each unit of the substrate processing device 100 based on various information stored in the memory unit 103. The control unit 102 has a processor, for example. The control unit 102 may also have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 102 may also have a general-purpose computer or a dedicated computer.

The memory unit 103 stores various information for controlling the operation of the substrate processing device 100. For example, the memory unit 103 stores data and computer programs. The data includes various recipe data. The recipe data includes, for example, a process recipe. The process recipe is data that specifies the processing sequence of a substrate. Specifically, the process recipe specifies the execution sequence of a series of processes included in the substrate processing, the content of each process, and the conditions of each process (the setting value of the parameter).

The memory unit 103 has a main memory device. The main memory device is, for example, a semiconductor memory. The memory unit 103 may further have an auxiliary memory device. The auxiliary memory device includes, for example, at least one of a semiconductor memory and a hard disk drive. The memory unit 103 may also include a removable medium.

Next, referring to FIG. 1 to FIG. 3 , the substrate processing device 100 of this embodiment is described. FIG. 2 is a cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing device 100 of this embodiment. FIG. 3 is another cross-sectional view schematically showing the structure of the substrate processing unit 2 included in the substrate processing device 100 of this embodiment.

As shown in FIG. 2 , the substrate processing unit 2 includes a chamber 201, an exhaust pipe 202, a rotary chuck 3, a rotary motor unit 4, a substrate heating unit 5, a nozzle 6 included in a fluid supply unit 600, a blowing unit 8, a moving mechanism 20, and a processing space forming unit 70. The fluid supply unit 600 is an example of a processing liquid supply unit.

The chamber 201 has a roughly box-shaped shape. The chamber 201 accommodates the substrate W, a portion of the exhaust pipe 202, the rotary chuck 3, the rotary motor part 4, a portion of the substrate heating part 5, the nozzle 6, the blowing part 8, the moving mechanism 20 and the processing space forming part 70.

The rotary chuck 3 holds the substrate W in the chamber 201. The rotary chuck 3 is an example of a substrate holding portion. More specifically, the rotary chuck 3 holds the substrate W in a horizontal position. As shown in FIG. 2 , the rotary chuck 3 may also have a plurality of chuck components 31 and a rotary base 32.

The rotating base 32 is roughly disk-shaped and supports a plurality of chuck members 31 in a horizontal position. The plurality of chuck members 31 are arranged on the periphery of the rotating base 32. The plurality of chuck members 31 clamp the periphery of the substrate W. The substrate W is held in a horizontal position by the plurality of chuck members 31. The movement of the plurality of chuck members 31 is controlled by the control device 101 (control unit 102).

The rotary motor unit 4 rotates the substrate W held on the rotary chuck 3. The rotary motor unit 4 is an example of a substrate rotating unit. More specifically, the rotary motor unit 4 rotates the substrate W and the rotary chuck 3 integrally around a rotation axis AX extending in the vertical direction. The control device 101 (control unit 102) controls the rotation of the substrate W of the rotary motor unit 4.

Specifically, the rotation axis AX passes through the center of the rotating base 32. The plurality of chuck components 31 are arranged so that the center of the substrate W coincides with the center of the rotating base 32. Therefore, the substrate W rotates with the center of the substrate W as the rotation center.

As shown in FIG. 2 , the rotary chuck 4 may have a shaft 41 and a motor body 42. The shaft 41 is coupled to the rotary base 32. The motor body 42 rotates the shaft 41. As a result, the rotary base 32 rotates. The movement of the motor body 42 is controlled by the control device 101 (control unit 102).

The processing space forming part 70 includes a blocking member 72. The blocking member 72 is opposite to the substrate W held on the rotating chuck 3. The blocking member 72 is an example of an opposing member. More specifically, the blocking member 72 is located above the substrate W held on the rotating chuck 3. The processing space forming part 70 forms a processing space for processing the substrate W (substrate processing). The processing space is a space that is roughly blocked from the external atmosphere of the processing space. That is, the processing space is a local space formed inside the chamber 201. The processing space is roughly blocked from the atmosphere inside the chamber 201.

Specifically, the blocking member 72 has a top cover 721 and a side wall 722. The top cover 721 is a roughly disk-shaped member. The lower surface of the top cover 721 faces the upper surface of the substrate W held on the rotating chuck 3. That is, the lower surface of the top cover 721 faces the rotating chuck 3. The side wall 722 is a roughly cylindrical member. The side wall 722 protrudes downward from the outer periphery of the top cover 721.

More specifically, the top cover 721 extends along a substantially horizontal plane. The diameter of the top cover 721 is, for example, larger than the diameter of the substrate W. The diameter of the top cover 721 may be larger than the diameter of the rotating base 32. The center of the top cover 721 may be located on the rotation axis AX. That is, the top cover 721 may be a substantially disk-shaped component centered on the rotation axis AX. Similarly, the side wall 722 may be a substantially cylindrical component centered on the rotation axis AX.

Furthermore, the blocking member 72 has a through hole 72a. The through hole 72a penetrates the top cover 721. One end of the through hole 72a is located on the lower surface of the top cover 721. Therefore, one end of the through hole 72a is opposite to the substrate W held on the rotating chuck 3. That is, one end of the through hole 72a is opposite to the rotating chuck 3.

The nozzle 6 sprays inert gas during substrate processing. In addition, the nozzle 6 supplies processing liquid to the substrate W rotated by the rotary motor 4. More specifically, the nozzle 6 sprays processing liquid to the substrate W located in the processing space. In this embodiment, the nozzle 6 supplies SPM, hydrogen peroxide, cleaning liquid, and SC1 to the substrate W in the order of SPM, hydrogen peroxide, cleaning liquid, SC1, and cleaning liquid. That is, the nozzle 6 supplies SPM, hydrogen peroxide, cleaning liquid, and SC1 to the substrate W mutually exclusively.

The nozzle 6 is received in the through hole 72a of the blocking member 72. The front end of the nozzle 6 is exposed from one end of the through hole 72a. The inert gas and the treatment liquid are sprayed from the front end of the nozzle 6. The front end of the nozzle 6 may be located inside the through hole 72a. Alternatively, the front end of the nozzle 6 may also be located outside the through hole 72a. That is, the front end of the nozzle 6 may protrude from the through hole 72a toward the rotary chuck 3.

More specifically, the through hole 72a and the nozzle 6 extend in a substantially vertical direction. One end of the through hole 72a is the lower end of the through hole 72a, and the front end of the nozzle 6 is the lower end of the nozzle 6. The through hole 72a is, for example, substantially circular when viewed from above. The diameter of the through hole 72a is sufficiently smaller than the diameter of the substrate W. The through hole 72a is, for example, arranged on the rotation axis AX. In this case, the nozzle 6 is opposite to the central portion of the substrate W held on the rotary chuck 3. Therefore, the processing liquid is sprayed from the nozzle 6 to the central portion of the substrate W.

The moving mechanism 20 moves the blocking member 72 in the up and down directions. Specifically, the moving mechanism 20 includes a holding portion 21, an arm portion 22, an arm base 23, and a lifting portion 24.

The arm base 23 extends in the vertical direction. The base end of the arm 22 is coupled to the arm base 23. The arm 22 extends horizontally from the arm base 23. The holding portion 21 is coupled to the front end of the arm 22. The holding portion 21 holds the blocking member 72. More specifically, the holding portion 21 holds the blocking member 72 in a manner such that the top cover portion 721 is in a substantially horizontal position.

The lifting unit 24 lifts the arm base 23 in the vertical direction. As a result, the blocking member 72 moves in the up-down direction. More specifically, the lifting unit 24 lifts the blocking member 72 between the blocking position and the retreat position. FIG. 2 shows the blocking member 72 at the blocking position. FIG. 3 shows the blocking member 72 at the retreat position. As shown in FIG. 2 and FIG. 3, the blocking position is a position below the retreat position. That is, the blocking position is a position closer to the substrate W held on the rotary chuck 3 than the retreat position.

The movement of the lifting part 24 is controlled by the control device 101 (control part 102). The lifting part 24 may have, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

The control device 101 (control unit 102), for example, moves the blocking member 72 from the blocking position to the retreat position when the substrate W is transferred between the central robot CR and the rotary chuck 3 as described with reference to FIG. 1 . That is, when the substrate W is moved into the chamber 201 , the blocking member 72 retreats to the retreat position. Also, when the substrate W is moved out of the chamber 201 , the blocking member 72 retreats to the retreat position. The retreat position is a position where the hand of the central robot CR can enter the gap between the blocking member 72 and the rotary chuck 3 .

When the control device 101 (control unit 102) processes the substrate W in the processing space, the blocking member 72 moves from the retreat position to the blocking position. By moving the blocking member 72 to the blocking position, a processing space is formed.

In this embodiment, the processing space forming part 70 further includes a liquid receiving part 71. The liquid receiving part 71 receives the processing liquid discharged from the substrate W rotated by the rotating motor part 4. As shown in FIG. 2, the liquid receiving part 71 may have a protective member 711 and a protective member lifting part 714.

The protective member 711 is roughly cylindrical and surrounds the substrate W held on the rotating chuck 3. The protective member 711 receives the processing liquid discharged from the substrate W. More specifically, the protective member 711 receives the processing liquid scattered from the rotating substrate W.

As shown in FIG. 2 , the protective member 711 may include a cylindrical guide portion 712 and a cylindrical inclined portion 713. The inclined portion 713 extends obliquely upward toward the rotation axis AX. The guide portion 712 extends downward from the lower end of the inclined portion 713. The inclined portion 713 includes an annular upper end 71a. The upper end 71a of the inclined portion 713 has an inner diameter greater than that of the blocking member 72. The upper end 71a of the inclined portion 713 is equivalent to the upper end of the protective member 711. In the following, the upper end 71a of the inclined portion 713 may be referred to as the "upper end 71a of the protective member 711".

The protective member lifting unit 714 raises and lowers the protective member 711 between the first lower position indicated by the two-dot chain line in FIG. 2 and the first upper position indicated by the solid line in FIG. 2. Here, the first lower position indicates that the upper end 71a of the protective member 711 is arranged at a position below the substrate W. The first upper position indicates that the upper end 71a of the protective member 711 is arranged at a position above the substrate W.

The guard lifting part 714 is controlled by the control device 101 (control part 102). The guard lifting part 714 may have, for example, a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

For example, after the substrate W is held by the rotary chuck 3, the control device 101 (control unit 102) moves the protective member 711 from the first lower position to the first upper position. By moving the protective member 711 to the first upper position, the protective member 711 can receive the processing liquid scattered from the substrate W. In addition, when the substrate W is carried out of the chamber 201, the control device 101 (control unit 102) moves the protective member 711 from the first upper position to the first lower position. By moving the protective member 711 to the first lower position, the substrate W can be transferred between the central robot CR and the rotary chuck 3 described with reference to FIG. 1.

In this embodiment, the shield 711 is moved to the first upper position, and the blocking member 72 is moved to the blocking position, thereby forming a processing space inside the chamber 201. Specifically, the upper end 71a of the shield 711 disposed at the first upper position surrounds the side wall portion 722 of the blocking member 72 disposed at the blocking position. As a result, a local space (processing space) that is substantially blocked from the atmosphere inside the chamber 201 is formed.

As described above, the nozzle 6 ejects inert gas when processing the substrate W. The inert gas is supplied to the processing space. Since the processing space is substantially isolated from the external atmosphere of the processing space, the processing space is filled with inert gas. Specifically, the inert gas is always supplied to the processing space during the period when the processing space is formed.

In addition, in this embodiment, the holding portion 21 holds the blocking member 72 rotatably. If the blocking member 72 moves to the blocking position, it engages with the rotating chuck 3. If the rotating chuck 3 rotates, the blocking member 72 rotates together with the rotating chuck 3.

The exhaust pipe 202 exhausts the gas in the chamber 201 to the outside of the chamber 201. Specifically, the gas in the exhaust pipe 202 is always sucked by the exhaust equipment (not shown) installed in the factory where the substrate processing device 100 is installed.

The upstream end of the exhaust pipe 202 is located below the rotating base 32 and is connected to the processing space formed by the processing space forming portion 70. Therefore, when the substrate is processed, the inert gas in the processing space is sucked to the upstream end of the exhaust pipe 202 by the suction force of the exhaust equipment transmitted through the exhaust pipe 202. As a result, the inert gas in the processing space is discharged to the outside of the chamber 201 through the exhaust pipe 202.

Furthermore, the chemical liquid atmosphere in the processing space is discharged to the outside of the chamber 201 through the exhaust pipe 202 together with the inert gas. The chemical liquid atmosphere is generated from the front end of the nozzle 6 when the chemical liquid is sprayed from the nozzle 6. In addition, the chemical liquid atmosphere is generated from the upper surface of the substrate W by the collision of the chemical liquid with the upper surface of the substrate W. The chemical liquid atmosphere is also generated when the chemical liquid collides with the components around the substrate W such as the rotating chuck 3 or the liquid receiving part 71. In particular, when SPM above 100°C is sprayed from the nozzle 6, the water contained in the SPM evaporates, and droplets or sprays of SPM are sprayed from the nozzle 6. There are also cases where smoke (smoke-like gas) is generated from the substrate W by the reaction between the SPM and the anti-etching agent film.

The substrate heating unit 5 heats the substrate W held on the rotary chuck 3. For example, as shown in FIG. 2 , the substrate heating unit 5 may also have a heating component 51, a lifting shaft 52, a power supply unit 53, and a heater lifting unit 54.

The heating member 51 is roughly disk-shaped and is located between the substrate W held by the chuck member 31 and the rotating base 32. A heater is embedded in the heating member 51. The heater includes, for example, a resistor. The power supply unit 53 energizes the heater embedded in the heating member 51 to heat the heating member 51. The power supply unit 53 is controlled by the control device 101 (control unit 102).

The lifting shaft 52 is a roughly rod-shaped member extending in a roughly vertical direction. The lifting shaft 52 is combined with the heating member 51. The heater lifting unit 54 lifts and lowers the heating member 51 by lifting and lowering the lifting shaft 52. Specifically, the heater lifting unit 54 lifts and lowers the heating member 51 between the lower surface of the substrate W held on the chuck member 31 and the upper surface of the rotating base 32. The heater lifting unit 54 is controlled by the control device 101 (control unit 102). The heater lifting unit 54 may also have a ball screw mechanism and an electric motor that provides driving force to the ball screw mechanism.

The blowing section 8 blows superheated water vapor into the processing space. The processing space is filled with superheated water vapor. The blowing section 8 is an example of a superheated water vapor blowing section. In addition, superheated water vapor is generated by heating water vapor. Therefore, superheated water vapor is a high temperature higher than the temperature of water vapor. Specifically, the temperature when water vapor is generated is 100°C, and the temperature when superheated water vapor is generated is a high temperature higher than 100°C.

In this embodiment, the blow-out section 8 includes a first blow-out section 81 and a second blow-out section 82. The first blow-out section 81 is arranged above the substrate W relatively held on the rotary chuck 3. The first blow-out section 81 is an example of a first superheated water vapor blow-out section. In this embodiment, the first blow-out section 81 is supported on the inner wall surface of the blocking member 72. The second blow-out section 82 is supported on the liquid receiving section 71. Specifically, the second blow-out section 82 is supported on the inner wall surface of the protective member 711. The second blow-out section 82 is an example of a second superheated water vapor blow-out section. For example, the first blow-out section 81 can also be fixed to the blocking member 72 via a bracket. Similarly, the second blow-out section 82 can also be fixed to the protective member 711 via a bracket.

The blowing of superheated water vapor from the blowing section 8 is controlled by the control device 101 (control section 102). For example, when the control device 101 (control section 102) supplies SPM to the substrate W, the superheated water vapor is blown out from the blowing section 8. Hereinafter, the substrate processing by SPM may be referred to as "SPM processing".

According to this embodiment, during the SPM treatment, the processing space can be filled with superheated water vapor. Therefore, compared with the structure in which the temperature of the substrate W is raised only by the temperature of the SPM, the time required to raise the temperature of the substrate W can be shortened. As a result, the processing time can be shortened, and the consumption of SPM can be reduced. Thereby, the consumption of sulfuric acid can be reduced.

Furthermore, when performing SPM processing, SPM flows on the upper surface of substrate W. Specifically, SPM sprayed on the upper surface of substrate W flows from the center of substrate W to the peripheral portion and is discharged from substrate W. Therefore, it is not easy to apply heat to the upper surface of substrate W. In contrast, according to this embodiment, since the processing space is filled with superheated water vapor, heat can be applied to substrate W from the lower surface of substrate W. Therefore, the temperature of substrate W can be effectively increased.

In addition, when the temperature of the components arranged around the substrate W is relatively low, the temperature of the substrate W will not easily rise due to the temperature of the components arranged around the substrate W. In contrast, according to this embodiment, since the processing space is filled with superheated water vapor, the temperature of the components arranged around the substrate W, such as the rotating chuck 3, the liquid receiving part 71 and the blocking component 72, can be raised by the superheated water vapor. Therefore, the time required for the temperature of the substrate W to rise can be shortened.

In addition, the superheated water vapor contains some water. Therefore, the water contained in the superheated water vapor comes into contact with the SPM, and the heat generated when the SPM reacts with the water can increase the temperature of the substrate W.

In addition, by supplying superheated water vapor, the humidity of the processing space becomes higher. As a result, the SPM is easy to expand on the surface of the substrate W, and the substrate W can be processed efficiently.

In addition, most of the chemical liquid atmosphere generated in the processing space during substrate processing will be discharged to the outside of the chamber 201 through the exhaust pipe 202 together with the inert gas, but a part of the chemical liquid atmosphere will diffuse in the processing space and adhere to the components around the substrate W. In this case, there is a risk of contamination of the substrate W. In contrast, according to this embodiment, the diffusion of the chemical liquid atmosphere can be suppressed by superheated water vapor. Therefore, the contamination of the substrate W caused by the chemical liquid atmosphere can be reduced.

Specifically, the superheated water vapor is attracted to the upstream end of the exhaust pipe 202 together with the inert gas by the suction force of the exhaust equipment transmitted through the exhaust pipe 202. At this time, the droplets contained in the superheated water vapor collide with the liquid chemical components floating in the processing space. As a result, the liquid chemical components are given an acceleration toward the upstream end of the exhaust pipe 202, and the liquid chemical atmosphere is effectively discharged to the outside of the chamber 201 through the exhaust pipe 202.

In particular, in this embodiment, the first blowing part 81 is arranged above the substrate W. Therefore, before the chemical liquid components generated from the substrate W are attached to the components around the substrate W, it is easy for the droplets of superheated water vapor to collide with the chemical liquid components generated from the substrate W. Therefore, the diffusion of the chemical liquid atmosphere can be efficiently suppressed.

Furthermore, in this embodiment, the first blowing part 81 is supported by the blocking member 72. Therefore, before the liquid chemical components generated from the nozzle 6 are attached to the components around the substrate W, the droplets of the superheated water vapor are easy to collide with the liquid chemical components generated from the nozzle 6. Therefore, the diffusion of the liquid chemical atmosphere can be efficiently suppressed.

The first blowing part 81 is further described. In this embodiment, the first blowing part 81 is located outside the substrate W held on the rotating chuck 3 when viewed from above. Therefore, even if water droplets are generated and drip from the first blowing part 81, the water droplets are not easy to fall onto the substrate W.

In addition, in this embodiment, the first blowing part 81 is supported on the inner peripheral surface of the side wall part 722. Therefore, the first blowing part 81 is arranged at a position relatively far from the nozzle 6. Therefore, the superheated water vapor is not easily attracted to the SPM ejected from the nozzle 6. As a result, the superheated water vapor is not easily uneven in the processing space, so the substrate W or the components arranged around the substrate W can be efficiently heated by the superheated water vapor.

Next, the second blowing section 82 is further described. In this embodiment, the second blowing section 82 is arranged below the substrate W. For example, the second blowing section 82 is supported on the inner peripheral surface of the guide section 712. By arranging the second blowing section 82 below the substrate W, superheated water vapor can be efficiently supplied from the second blowing section 82 to the lower surface of the substrate W. Therefore, the temperature of the substrate W can be efficiently increased from the lower surface of the substrate W.

In addition, in this embodiment, the substrate processing device 100 has two blowing parts 8 (the first blowing part 81 and the second blowing part 82), but the number of blowing parts 8 may be one or more than three. For example, the blowing part 8 may include only one of the first blowing part 81 and the second blowing part 82. In addition, the substrate processing device 100 may have more than two blowing parts 8 supported by the blocking member 72, and may also have more than two blowing parts 8 supported by the liquid receiving part 71.

Next, referring to FIG. 4(a) and FIG. 4(b), the substrate processing device 100 of this embodiment is described. FIG. 4(a) is a bottom view of the nozzle 6 included in the substrate processing device 100 of this embodiment. FIG. 4(b) is a diagram showing the structure of the fluid supply unit 600 included in the substrate processing device 100 of this embodiment.

As shown in FIG. 4(a), the nozzle 6 has a first nozzle 61 to a fourth nozzle 64. The first nozzle 61 to the fourth nozzle 64 are open toward the lower surface (front end) of the nozzle 6. In addition, the fourth nozzle 64 is annular. The fourth nozzle 64 extends along the outer periphery of the nozzle 6 at the lower surface (front end) of the nozzle 6. SPM and hydrogen peroxide are ejected mutually exclusively from the first nozzle 61. SC1 is ejected from the second nozzle 62. Cleaning liquid is ejected from the third nozzle 63. Inert gas is ejected from the fourth nozzle 64. In addition, in this embodiment, the inert gas is nitrogen.

As shown in FIG. 4( b ), the fluid supply unit 600 includes, in addition to the nozzle 6 , a first liquid supply unit 610 , a second liquid supply unit 620 , a cleaning liquid supply unit 630 , and a gas supply unit 640 .

The spraying of SPM from the nozzle 6 and the spraying of hydrogen peroxide from the nozzle 6 are controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the spraying of SPM from the nozzle 6 and the spraying of hydrogen peroxide from the nozzle 6 by controlling the first liquid supply unit 610.

The first chemical liquid supply unit 610 supplies SPM and hydrogen peroxide to the nozzle 6 in a mutually exclusive manner. The SPM supplied to the nozzle 6 from the first chemical liquid supply unit 610 is ejected from the first ejection port 61 described with reference to FIG. 4(a). Similarly, the hydrogen peroxide supplied to the nozzle 6 from the first chemical liquid supply unit 610 is ejected from the first ejection port 61 described with reference to FIG. 4(a).

Specifically, the first liquid medicine supply unit 610 may also include a first liquid medicine supply pipe 611, a first component on-off valve 613, a second component on-off valve 615, and a heater 617. A portion of the first liquid medicine supply pipe 611 is accommodated in the chamber 201 described with reference to FIG. 2. The first component on-off valve 613, the second component on-off valve 615, and the heater 617 are accommodated in the fluid box 10B described with reference to FIG. 1.

The first liquid supply pipe 611 supplies SPM and hydrogen peroxide to the nozzle 6 mutually exclusively. Specifically, the first liquid supply pipe 611 is a tubular component that allows SPM and hydrogen peroxide to flow to the nozzle 6.

Specifically, the first liquid supply pipe 611 includes a first pipe 611a and a second pipe 611b. One end of the first pipe 611a is connected to the nozzle 6. One end of the second pipe 611b is connected to the first pipe 611a. Sulfuric acid flows into the first pipe 611a. Hydrogen peroxide water flows into the second pipe 611b.

The heater 617 is installed in the first pipe 611a. For example, the heater 617 is installed in the first pipe 611a on the upstream side of the first component opening and closing valve 613. The heater 617 heats the sulfuric acid flowing through the first pipe 611a.

The first component on-off valve 613 is installed in the first pipe 611a. Specifically, the first component on-off valve 613 is arranged on the upstream side of the connection point CP between the first pipe 611a and the second pipe 611b. The second component on-off valve 615 is installed in the second pipe 611b.

The first component on-off valve 613 and the second component on-off valve 615 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing actions of the first component on-off valve 613 and the second component on-off valve 615. The actuators of the first component on-off valve 613 and the second component on-off valve 615 are, for example, pneumatic actuators or electric actuators.

When supplying SPM to the substrate W, the control device 101 (control unit 102) sets the first component opening and closing valve 613 and the second component opening and closing valve 615 to an open state. When the first component opening and closing valve 613 and the second component opening and closing valve 615 are set to an open state, sulfuric acid flows through the first pipe 611a toward the nozzle 6, and hydrogen peroxide flows through the second pipe 611b toward the connection part CP. As a result, sulfuric acid and hydrogen peroxide are mixed at the connection part CP to generate SPM. SPM flows through the first pipe 611a toward the nozzle 6, and SPM is ejected from the nozzle 6 toward the substrate W.

When supplying hydrogen peroxide to the substrate W, the control device 101 (control unit 102) sets the first component on-off valve 613 to a closed state and sets the second component on-off valve 615 to an open state. When the first component on-off valve 613 is set to a closed state and the second component on-off valve 615 is set to an open state, the flow of sulfuric acid through the first pipe 611a is stopped, and the hydrogen peroxide flows through the second pipe 611b toward the connection part CP. As a result, the hydrogen peroxide flowing into the first pipe 611a flows through the first pipe 611a toward the nozzle 6, and the hydrogen peroxide is sprayed from the nozzle 6 toward the substrate W.

When the control device 101 (control unit 102) stops spraying SPM and hydrogen peroxide from the nozzle 6, the first component on-off valve 613 and the second component on-off valve 615 are set to the closed state. When the first component on-off valve 613 and the second component on-off valve 615 are set to the closed state, the flow of sulfuric acid through the first pipe 611a is stopped, and the flow of hydrogen peroxide through the second pipe 611b is stopped.

The ejection of SC1 from the nozzle 6 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the ejection of SC1 from the nozzle 6 by controlling the second liquid supply unit 620.

The second liquid medicine supply unit 620 supplies SC1 to the nozzle 6. SC1 supplied from the second liquid medicine supply unit 620 to the nozzle 6 is ejected from the second ejection port 62 described with reference to FIG. 4(a).

Specifically, the second liquid medicine supply unit 620 may also include a second liquid medicine supply pipe 621 and a liquid medicine on-off valve 623. A portion of the second liquid medicine supply pipe 621 is accommodated in the chamber 201 described with reference to FIG. 2. The liquid medicine on-off valve 623 is accommodated in the fluid box 10B described with reference to FIG. 1.

The second liquid medicine supply pipe 621 supplies SC1 to the nozzle 6. Specifically, the second liquid medicine supply pipe 621 is a tubular component that allows SC1 to flow to the nozzle 6.

The liquid medicine opening and closing valve 623 is installed in the second liquid medicine supply pipe 621. The liquid medicine opening and closing valve 623 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the liquid medicine opening and closing valve 623. The actuator of the liquid medicine opening and closing valve 623 is, for example, a pneumatic actuator or an electric actuator.

When the control device 101 (control unit 102) supplies SC1 to the substrate W, the chemical liquid on-off valve 623 is set to an open state. When the chemical liquid on-off valve 623 is set to an open state, SC1 flows to the nozzle 6 through the second chemical liquid supply pipe 621. As a result, SC1 is ejected from the nozzle 6 to the substrate W.

When the control device 101 (control unit 102) stops ejecting SC1 from the nozzle 6, the liquid medicine on-off valve 623 is set to a closed state. When the liquid medicine on-off valve 623 is set to a closed state, the flow of SC1 through the second liquid medicine supply pipe 621 is stopped.

The ejection of the cleaning liquid from the nozzle 6 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the ejection of the cleaning liquid from the nozzle 6 by controlling the cleaning liquid supply unit 630.

The cleaning liquid supply unit 630 supplies the cleaning liquid to the nozzle 6. The cleaning liquid supplied to the nozzle 6 from the cleaning liquid supply unit 630 is ejected from the third ejection port 63 described with reference to FIG. 4(a).

Specifically, the cleaning liquid supply unit 630 may also include a cleaning liquid supply pipe 631 and a cleaning liquid on-off valve 633. A portion of the cleaning liquid supply pipe 631 is accommodated in the chamber 201 described with reference to FIG. 2. The cleaning liquid on-off valve 633 is accommodated in the fluid box 10B described with reference to FIG. 1.

The cleaning liquid supply pipe 631 supplies cleaning liquid to the nozzle 6. Specifically, the cleaning liquid supply pipe 631 is a tubular component that allows the cleaning liquid to flow to the nozzle 6.

The cleaning liquid on-off valve 633 is installed in the cleaning liquid supply pipe 631. The cleaning liquid on-off valve 633 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the cleaning liquid on-off valve 633. The actuator of the cleaning liquid on-off valve 633 is, for example, a pneumatic actuator or an electric actuator.

When supplying cleaning liquid to substrate W, control device 101 (control unit 102) sets cleaning liquid on-off valve 633 to an open state. When cleaning liquid on-off valve 633 is set to an open state, cleaning liquid flows toward nozzle 6 through cleaning liquid supply pipe 631. As a result, cleaning liquid is sprayed from nozzle 6 to substrate W.

When the control device 101 (control unit 102) stops spraying the cleaning liquid from the nozzle 6, the cleaning liquid on-off valve 633 is set to the closed state. When the cleaning liquid on-off valve 633 is set to the closed state, the flow of the cleaning liquid through the cleaning liquid supply pipe 631 is stopped.

The ejection of nitrogen gas from the nozzle 6 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the ejection of nitrogen gas from the nozzle 6 by controlling the gas supply unit 640.

The gas supply unit 640 supplies nitrogen gas to the nozzle 6. The nitrogen gas supplied to the nozzle 6 from the gas supply unit 640 is ejected from the fourth ejection port 64 shown in FIG. 4(a).

Specifically, the gas supply unit 640 may also include a gas supply pipe 641 and a gas on-off valve 643. A portion of the gas supply pipe 641 is accommodated in the chamber 201 described with reference to FIG. 2 . The gas on-off valve 643 is accommodated in the fluid box 10B described with reference to FIG. 1 .

The gas supply pipe 641 supplies nitrogen to the nozzle 6. Specifically, the gas supply pipe 641 is a tubular component that allows nitrogen to flow to the nozzle 6.

The gas on-off valve 643 is installed in the gas supply pipe 641. The gas on-off valve 643 can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the gas on-off valve 643. The actuator of the gas on-off valve 643 is, for example, a pneumatic actuator or an electric actuator.

If the blocking member 72 described with reference to FIG. 2 moves to the blocking position, the control device 101 (control device 102) sets the gas opening and closing valve 643 to the open state. In other words, if the processing space is formed by the processing space forming part 70 described with reference to FIG. 2, the control device 101 (control unit 102) sets the gas opening and closing valve 643 to the open state. If the gas opening and closing valve 643 is set to the open state, nitrogen flows toward the nozzle 6 through the gas supply pipe 641, and nitrogen is ejected from the nozzle 6. As a result, nitrogen is supplied from the nozzle 6 to the processing space.

If the blocking member 72 described with reference to FIG. 2 moves to the retreat position, the control device 101 (control unit 102) sets the gas on-off valve 643 to the closed state. If the gas on-off valve 643 is set to the closed state, the flow of nitrogen through the gas supply pipe 641 stops, and the nitrogen gas ejection from the nozzle 6 stops.

In addition, in the fluid supply unit 600 described with reference to FIG. 4(a) and FIG. 4(b), although SPM and hydrogen peroxide are sprayed out from the first spray port 61 of the nozzle 6 mutually exclusively, the nozzle 6 may also have a spray port for spraying SPM and a spray port for spraying hydrogen peroxide separately. In this case, the fluid supply unit 600 has a liquid supply line for supplying SPM to the nozzle 6 and a liquid supply line for supplying hydrogen peroxide to the nozzle 6 separately.

Next, referring to FIG. 5 , the substrate processing apparatus 100 of this embodiment will be described. FIG. 5 is a diagram showing the structure of the first blowing section 81 and the superheated water vapor supply section 800 included in the substrate processing apparatus 100 of this embodiment.

As shown in FIG5, the first blow-out portion 81 is annular and extends along the inner circumference of the side wall portion 722 of the blocking member 72 described with reference to FIG2. The first blow-out portion 81 is a tubular member, and superheated water vapor flows through the interior of the first blow-out portion 81. At least one blow-out port (not shown) is formed on the inner circumference of the first blow-out portion 81. The blow-out port is an opening, and the superheated water vapor flowing through the first blow-out portion 81 is blown out from the blow-out port of the first blow-out portion 81 and supplied to the processing space. In addition, FIG5 illustrates the first blow-out portion 81 having four blow-out ports. The arrow in FIG5 indicates the superheated water vapor blown out from the first blow-out portion 81.

In addition, the structure of the second blowing part 82 described with reference to FIG. 2 is also the same as that of the first blowing part 81. Specifically, the second blowing part 82 is annular and extends along the inner circumference of the protective member 711 described with reference to FIG. 2. The second blowing part 82 is a tubular component, and the superheated water vapor flows through the inside of the second blowing part 82. At least one blowing outlet (not shown) is formed on the inner circumference of the second blowing part 82. The blowing outlet is an opening, and the superheated water vapor flowing through the second blowing part 82 is blown out from the blowing outlet of the second blowing part 82 and supplied to the processing space.

According to this embodiment, since the first blowing part 81 is annular, a plurality of blowing outlets are formed in the first blowing part 81, so that the superheated water vapor can be uniformly supplied to the processing space. However, the number of blowing outlets of the first blowing part 81 can also be 1.

Similarly, since the second blowing section 82 is annular, by forming a plurality of blowing outlets in the second blowing section 82, superheated water vapor can be uniformly supplied to the processing space. However, the number of blowing outlets of the second blowing section 82 may also be one.

Furthermore, according to this embodiment, for example, compared with the case where the first blowing section 81 is composed of a plurality of nozzles arranged along the circumference, the structure of the substrate processing device 100 is simple and easy to manufacture. Similarly, compared with the case where the second blowing section 82 is composed of a plurality of nozzles arranged along the circumference, the structure of the substrate processing device 100 is simple and easy to manufacture. However, the first blowing section 81 may also be composed of at least one nozzle. Similarly, the second blowing section 82 may also be composed of at least one nozzle.

Next, referring to FIG. 5 and FIG. 6 , the substrate processing device 100 of the present embodiment will be further described. FIG. 6 is a diagram showing the structure of the substrate processing device 100 of the present embodiment. As shown in FIG. 5 , the substrate processing device 100 further includes a superheated water vapor supply unit 800. The superheated water vapor supply unit 800 supplies superheated water vapor to the first blowing unit 81. Also, as shown in FIG. 6 , the superheated water vapor supply unit 800 supplies superheated water vapor to the second blowing unit 82.

As shown in FIG5 , the superheated steam supply unit 800 has a steam generation unit 800A, a first steam pipe 811, a superheated steam valve 812, a flow control valve 813, and a superheated steam generation heater 803. As shown in FIG6 , the superheated steam supply unit 800 further has a second steam pipe 821.

The water vapor generating section 800A is contained in the fluid box 10A described with reference to FIG. 1. The superheated water vapor valve 812, the flow control valve 813, and the superheated water vapor generating heater 803 are contained in the fluid box 10B described with reference to FIG. 1. A portion of the first water vapor piping 811 and a portion of the second water vapor piping 821 are contained in the chamber 201 described with reference to FIG. 2.

The water vapor generating section 800A generates water vapor. As shown in FIG5 , the water vapor generated from the water vapor generating section 800A flows into the first water vapor piping 811. Specifically, the water vapor generating section 800A has a storage section 801 and a water vapor generating heater 802. The storage section 801 stores pure water. The water vapor generating heater 802 heats the pure water stored in the storage section 801 to generate water vapor. One end of the first water vapor piping 811 is connected to the storage section 801. The operation of the water vapor generating heater 802 is controlled by the control device 101 (control section 102).

The other end of the first steam pipe 811 is connected to the first blow-out section 81. The first steam pipe 811 is provided with a superheated steam valve 812, a flow control valve 813 and a superheated steam generating heater 803.

The first steam pipe 811 is a tubular component for steam and superheated steam to flow. The superheated steam generating heater 803 heats the steam flowing from the storage unit 801 into the first steam pipe 811 to generate superheated steam. The superheated steam flows through the first steam pipe 811 and flows into the first blowing unit 81.

The second steam pipe 821 is a tubular component for circulating superheated steam. As shown in FIG6 , one end of the second steam pipe 821 is connected to the first steam pipe 811 at the downstream side of the superheated steam valve 812. Therefore, superheated steam flows from the first steam pipe 811 to the second steam pipe 821. The other end of the second steam pipe 821 is connected to the second blow-out section 82. The superheated steam flowing into the second steam pipe 821 flows through the second steam pipe 821 and flows into the second blow-out section 82.

The superheated water vapor valve 821 is an on-off valve that can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the superheated water vapor valve 812. The actuator of the superheated water vapor valve 812 is, for example, an air pressure actuator or an electric actuator. When the superheated water vapor valve 812 is opened, the superheated water vapor flows through the first water vapor pipe 811 to the first blow-out section 81, and the superheated water vapor is supplied to the first blow-out section 81. In addition, when the superheated water vapor valve 812 is opened, the superheated water vapor flows through the second water vapor pipe 821 to the second blow-out section 82, and the superheated water vapor is supplied to the second blow-out section 82. By closing the superheated steam valve 812, the supply of superheated steam to the first blow-out section 81 and the second blow-out section 82 is stopped.

The flow control valve 813 controls the flow of superheated steam flowing through the first steam pipe 811 and the second steam pipe 821. Specifically, the flow control valve 813 can control the opening, and the flow of superheated steam flowing through the first steam pipe 811 and the second steam pipe 821 becomes the size corresponding to the opening of the flow control valve 813. The actuator of the flow control valve 813 is, for example, an electric actuator. The flow control valve 813 can also be, for example, a motor needle valve. The opening of the flow control valve 813 is controlled by the control device 101 (control unit 102).

Next, referring to FIG. 1 to FIG. 7 , the substrate processing method of this embodiment is described. The substrate processing method of this embodiment is performed, for example, by the substrate processing device 100 described with reference to FIG. 1 to FIG. 6 . FIG. 7 is a flow chart showing the substrate processing method of this embodiment. Specifically, FIG. 7 shows the processing flow of the control device 101 (control unit 102 ).

As shown in FIG. 7 , the substrate processing method of this embodiment includes steps S1 to S8. When starting the processing shown in FIG. 7 , the control device 101 (control unit 102) first controls the central robot CR to move the substrate W into the chamber 201 (step S1). The control device 101 (control unit 102) controls the rotary chuck 3 to hold the substrate W moved in by the central robot CR (step S2). As a result, the substrate W is held in the chamber 201 by the rotary chuck 3.

After the substrate W is held by the rotary chuck 3, the control device 101 (control unit 102) controls the moving mechanism 20 to lower the blocking member 72 from the retreat position to the blocking position (step S3). As a result, a local space (processing space) surrounded by the blocking member 72 and the liquid receiving part 71 is formed.

After forming the processing space, the control device 101 (control unit 102) controls the substrate processing unit 2 to perform substrate processing (step S4). Specifically, the control device 101 (control unit 102) controls the substrate processing unit 2 to supply SPM, hydrogen peroxide, cleaning liquid, and SC1 to the substrate W in the order of SPM, hydrogen peroxide, cleaning liquid, SC1, and cleaning liquid.

Furthermore, after forming the processing space, the control device 101 (control unit 102) controls the gas supply unit 640 described with reference to FIG. 4(b) to supply inert gas (nitrogen) to the processing space. More specifically, the control device 101 (control unit 102) continues to supply the inert gas (nitrogen) of the gas supply unit 640 during the period of forming the processing space by the processing space forming unit 70. Therefore, during the period of forming the processing space, the processing space is filled with inert gas (nitrogen). In other words, during the period of substrate processing, the processing space is filled with inert gas (nitrogen).

Furthermore, the control device 101 (control unit 102) and the substrate processing unit 2 perform superheated water vapor processing (step S5). Specifically, the control device 101 (control unit 102) controls the superheated water vapor supply unit 800 described with reference to Figures 5 and 6 to blow superheated water vapor from the blow-out unit 8 to the processing space. For example, the control device 101 (control unit 102) blows superheated water vapor from the blow-out unit 8 during SPM processing.

After the substrate processing is completed, the control device 101 (control unit 102) controls the gas supply unit 640 described with reference to FIG. 4(b) to stop supplying the inert gas (nitrogen) to the processing space. Thereafter, the control device 101 (control unit 102) controls the moving mechanism 20 to move the blocking member 72 from the blocking position to the retreat position (step S6).

After the blocking member 72 rises from the blocking position to the retreat position, the control device 101 (control unit 102) controls the rotary chuck 3 to release the substrate W (step S7). After the rotary chuck 3 releases the substrate W, the control device 101 (control unit 102) controls the central robot CR to move the substrate W out of the chamber 201 (step S8). As a result, the process shown in Figure 7 is completed.

Next, referring to FIG. 1 to FIG. 15 , the substrate processing (step S4) and the superheated water vapor processing (step S5) shown in FIG. 7 are explained. FIG. 8 is a flow chart showing the substrate processing (step S4) and the superheated water vapor processing (step S5) included in the substrate processing method of the present embodiment. FIG. 9 is a diagram schematically showing the substrate processing section 2 during preheating. FIG. 10 is a diagram schematically showing the substrate processing section 2 during SPM processing. FIG. 11 is a diagram schematically showing the substrate processing section 2 during immersion processing. FIG. 12 is a diagram schematically showing the substrate processing section 2 during the treatment of substrate W by hydrogen peroxide. FIG. 13 is a diagram schematically showing the substrate processing section 2 during the cleaning treatment. FIG. 14 is a diagram schematically showing the substrate processing section 2 during the treatment of substrate W by SC1. FIG. 15 is a schematic diagram showing the substrate processing section 2 during the drying process.

As shown in FIG8 , after starting the substrate processing, the control device 101 (control unit 102) first controls the substrate heating unit 5 to heat the substrate W (step S41). That is, the substrate W is heated before performing the SPM processing. By heating the substrate W in advance, the stripping efficiency of the anti-etchant film of the SPM is improved.

Specifically, as shown in FIG. 9 , the control device 101 (control unit 102) controls the power supply unit 53 to energize the heater embedded in the heating member 51. As a result, the heating member 51 is heated. Furthermore, the control device 101 (control unit 102) controls the heater lifting unit 54 to raise the heating member 51 from the second lower position to the second upper position.

Here, the second lower position is the position where the heating member 51 is close to the upper surface of the rotating chuck 32. The second lower position may also be the position where the heating member 51 is in contact with the upper surface of the rotating chuck 32. The second upper position is the position where the heating member 51 is close to the lower surface of the substrate W. If the heating member 51 is raised to the second upper position, the substrate W is heated by the radiation heat from the heating member 51. In addition, during preheating, superheated water vapor is not supplied to the processing space.

After the control device 101 (control unit 102) preheats the substrate W for a preset time, it controls the rotary motor unit 4 to start rotating the substrate W held on the rotary chuck 3 (see FIG. 10 ).

After the rotation speed of the substrate W reaches the preset rotation speed, the control device 101 (control unit 102) controls the first liquid supply unit 610 described with reference to FIG. 4(b) to spray SPM from the nozzle 6 to the rotating substrate W (step S42). As a result, as shown in FIG. 10, SPM is supplied to the upper surface of the rotating substrate W, and a liquid film of SPM is formed on the upper surface of the substrate W. That is, when the control device 101 (control unit 102) supplies SPM to the substrate W, it controls the rotation speed of the substrate W, and forms a liquid film of SPM on the upper surface of the substrate W.

Furthermore, the control device 101 (control unit 102) performs the first superheated water vapor treatment (step S51) when supplying SPM to the substrate W. Specifically, as shown in FIG. 10 , the control device 101 (control unit 102) controls the superheated water vapor supply unit 800 described with reference to FIG. 5 and FIG. 6 to blow superheated water vapor from the blow-out unit 8 (the first blow-out unit 81 and the second blow-out unit 82) to the processing space.

According to this embodiment, during the SPM treatment, the processing space can be filled with superheated water vapor. Therefore, as already described, the time required for the temperature of the substrate W to rise can be shortened. As a result, the processing time can be shortened, and the consumption of SPM can be reduced. Therefore, the consumption of sulfuric acid can be reduced. Furthermore, according to this embodiment, as already described, the diffusion of the chemical liquid atmosphere can be suppressed by superheated water vapor.

The timing of starting to blow out superheated steam from the blowing section 8 may be before the start of the SPM spraying, or may be the same as the start of the SPM spraying. Alternatively, the timing of starting to blow out superheated steam from the blowing section 8 may be after the start of the SPM spraying. The control device 101 (control section 102) may also blow out superheated steam from the blowing section 8 continuously or intermittently.

The control device 101 (control unit 102) may blow out superheated steam from the blowing unit 8 only before the start of the SPM spraying, or may blow out superheated steam from the blowing unit 8 only when the SPM spraying starts. Alternatively, the control device 101 (control unit 102) may blow out superheated steam from the blowing unit 8 during a period from the start of the SPM spraying to the end of the spraying, which is shorter than the period from the start of the SPM spraying to the end of the spraying.

In addition, as shown in FIG. 10 , the control device 101 (control unit 102) can also control the heater lifting unit 54 before the start of the SPM spraying, so that the heating component 51 is lowered from the second upper position to the second lower position.

After a preset time has passed since the start of SPM spraying, the control device 101 (control unit 102) controls the first liquid supply unit 610 described in reference to FIG. 4 (b) to stop spraying SPM. Furthermore, the control device 101 (control unit 102) controls the rotation speed of the substrate W by the rotary motor unit 4 to form an immersed state in which the liquid film of SPM is supported on the upper surface of the substrate W (step S43). For example, the control device 101 (control unit 102) can also stop the rotation of the substrate W to form an immersed state (refer to FIG. 11). Alternatively, the control device 101 (control unit 102) can also rotate the substrate W at a low speed to form an immersed state. By forming an immersed state, the stripping efficiency of the anti-etching agent of SPM can be improved.

When the immersion state is formed (immersion treatment), the control device 101 (control unit 102) performs the second superheated steam treatment (step S52). Specifically, as shown in FIG. 11, the control device 101 (control unit 102) controls the superheated steam supply unit 800 to blow out the superheated steam from the blowing unit 8. The control device 101 (control unit 102) can also continuously supply superheated steam from the SPM treatment to the immersion treatment.

According to this embodiment, during the immersion treatment, the processing space can be filled with superheated water vapor. Therefore, the temperature of the substrate W is not easy to decrease during the immersion treatment. Therefore, the stripping efficiency of the anti-etching agent of SPM can be improved. As a result, the processing time can be shortened, and the consumption of SPM can be reduced. That is, the consumption of sulfuric acid can be reduced. Furthermore, according to this embodiment, as described above, the diffusion of the chemical liquid atmosphere can be suppressed by superheated water vapor.

In addition, since a liquid film of SPM is formed on the upper surface of substrate W, heat can be directly applied to substrate W from the upper surface side of substrate W. In contrast, in this embodiment, since the processing space can be filled with superheated water vapor, heat can be directly applied to substrate W from the lower surface side of substrate W. Therefore, the temperature of substrate W is not easy to decrease during immersion treatment. Therefore, the stripping efficiency of SPM anti-etching agent can be improved. Furthermore, according to this embodiment, since superheated water vapor can be efficiently supplied to the lower surface of substrate W from the second blowing part 82, the temperature decrease of substrate W can be further suppressed during immersion treatment.

In addition, as shown in FIG. 11 , the control device 101 (control unit 102) can also control the heater lifting unit 54 when the immersed state is formed, so that the heating component 51 rises from the second lower position to the second upper position, and the substrate W is heated by the heating component 51.

The control device 101 (control unit 102) controls the rotary motor unit 4 to start rotating the substrate W held on the rotary chuck 3 when a preset time has passed since the immersion state was formed (see FIG. 12). Alternatively, the control device 101 (control unit 102) controls the rotary motor unit 4 to increase the rotation speed of the substrate W when a preset time has passed since the immersion state was formed.

If the rotation speed of the substrate W reaches the preset rotation speed, the control device 101 (control unit 102) controls the first liquid supply unit 610 described with reference to FIG. 4 (b) to spray hydrogen peroxide from the nozzle 6 to the rotating substrate W (step S44). As a result, as shown in FIG. 12, hydrogen peroxide is supplied to the upper surface of the rotating substrate W, and a liquid film of hydrogen peroxide is formed on the upper surface of the substrate W. That is, when the control device 101 (control unit 102) supplies hydrogen peroxide to the substrate W, it controls the rotation speed of the substrate W, and forms a liquid film of hydrogen peroxide on the upper surface of the substrate W. In detail, by spraying hydrogen peroxide, SPM is discharged from the upper surface of the substrate W, and the liquid film of SPM is replaced with a liquid film of hydrogen peroxide.

The control device 101 (control unit 102) performs the third superheated water vapor treatment (step S53) when supplying hydrogen peroxide to the substrate W. Specifically, as shown in FIG12, the control device 101 (control unit 102) controls the superheated water vapor supply unit 800 described with reference to FIG5 and FIG6 to reduce the flow rate of the superheated water vapor blown out from the blow-out unit 8 (the first blow-out unit 81 and the second blow-out unit 82).

Specifically, the control device 101 (control unit 102) blows out superheated water vapor at a first flow rate from the blow-out unit 8 during the SPM process and the immersion process, and blows out superheated water vapor at a second flow rate less than the first flow rate from the blow-out unit 8 when hydrogen peroxide is supplied to the substrate W. The control device 101 (control unit 102) adjusts the flow rate of the superheated water vapor by controlling the flow control valve 813 shown in FIG. 5 and FIG. 6.

In addition, as shown in FIG. 12 , when the control device 101 (control unit 102) supplies hydrogen peroxide to the substrate W, the substrate W can also be heated by the heating component 51.

Hydrogen peroxide may oxidize the substrate W. In particular, the higher the temperature of the hydrogen peroxide, the easier it is for the substrate W to be oxidized. Furthermore, the higher the temperature of the substrate W, the easier it is for the substrate W to be oxidized. In contrast, according to this embodiment, when hydrogen peroxide is supplied to the substrate W, the amount of superheated water vapor supplied to the processing space can be reduced. As a result, the temperature rise of the hydrogen peroxide caused by the superheated water vapor is suppressed, and since the temperature of the substrate W is easily lowered, the oxidation of the substrate W caused by the hydrogen peroxide can be suppressed.

When hydrogen peroxide is supplied to the substrate W, a large amount of smoke is generated from the substrate W. Furthermore, when hydrogen peroxide is supplied to the substrate W, smoke is easily generated from the nozzle 6. According to the present embodiment, when hydrogen peroxide is supplied to the substrate W, superheated water vapor is supplied, thereby suppressing the diffusion of smoke.

Furthermore, when hydrogen peroxide is supplied to the substrate W, hydrogen peroxide at room temperature is sprayed onto the substrate W on which the liquid film of the high-temperature SPM is formed. As a result, a temperature gradient is generated within the surface of the substrate W, causing the substrate W to vibrate. In contrast, according to this embodiment, when hydrogen peroxide is supplied to the substrate W, superheated water vapor is supplied, thereby suppressing the generation of a temperature gradient. Therefore, the vibration of the substrate W can be suppressed.

After a preset time has passed since the start of spraying hydrogen peroxide, the control device 101 (control unit 102) controls the first liquid supply unit 610 described with reference to FIG. 4(b) to stop spraying hydrogen peroxide.

After stopping the spraying of hydrogen peroxide, the control device 101 (control unit 102) controls the cleaning liquid supply unit 630 described with reference to FIG. 4(b) to spray the cleaning liquid from the nozzle 6 to the rotating substrate W while rotating the substrate W held on the rotating chuck 3 (step S45). As a result, as shown in FIG. 13, the cleaning liquid is supplied to the upper surface of the rotating substrate W, and a liquid film of the cleaning liquid is formed on the upper surface of the substrate W. That is, when the control device 101 (control unit 102) supplies the cleaning liquid to the substrate W, it controls the rotation speed of the substrate W, and forms a liquid film of the cleaning liquid on the upper surface of the substrate W. Specifically, by spraying the cleaning liquid, the hydrogen peroxide is discharged from the upper surface of the substrate W, and the liquid film of the hydrogen peroxide is replaced by the liquid film of the cleaning liquid.

As shown in FIG13 , after stopping the spraying of hydrogen peroxide and before starting to supply the cleaning liquid to the substrate W, the control device 101 (control unit 102) controls the superheated water vapor supply unit 800 described with reference to FIG5 and FIG6 to stop blowing the superheated water vapor from the blow-out unit 8. That is, the control device 101 (control unit 102) stops supplying superheated water vapor to the processing space.

According to this embodiment, the supply of superheated water vapor to the processing space is stopped before the cleaning liquid is supplied to the substrate W, so the cleaning liquid is less likely to evaporate from the upper surface of the substrate W compared to the case where the superheated water vapor is continuously supplied to the processing space.

In addition, as shown in FIG. 13 , the control device 101 (control unit 102) can also control the heater lifting unit 54 before the start of the spraying of the cleaning liquid, so that the heating component 51 is lowered from the second upper position to the second lower position. In this way, the cleaning liquid is not easy to evaporate from the upper surface of the substrate W.

After a preset time has passed since the start of spraying the cleaning liquid, the control device 101 (control unit 102) controls the cleaning liquid supply unit 630 described with reference to FIG. 4(b) to stop spraying the cleaning liquid. After stopping spraying the cleaning liquid, the control device 101 (control unit 102) controls the second liquid supply unit 620 described with reference to FIG. 4(b) to spray SC1 from the nozzle 6 to the rotating substrate W while rotating the substrate W held on the rotary chuck 3 (step S46). As a result, as shown in FIG. 14, SC1 is supplied to the upper surface of the rotating substrate W, and a liquid film of SC1 is formed on the upper surface of the substrate W. That is, when the control device 101 (control unit 102) supplies SC1 to the substrate W, it controls the rotation speed of the substrate W, and forms a liquid film of SC1 on the upper surface of the substrate W. In detail, by spraying SC1, the cleaning liquid is discharged from the upper surface of the substrate W, and the liquid film of the cleaning liquid is replaced with the liquid film of SC1.

The control device 101 (control unit 102) performs the fourth superheated water vapor treatment (step S54) when supplying SC1 to the substrate W. Specifically, as shown in FIG. 14, the control device 101 (control unit 102) controls the superheated water vapor supply unit 800 described with reference to FIG. 5 and FIG. 6 to blow out superheated water vapor from the blow-out unit 8 (the first blow-out unit 81 and the second blow-out unit 82).

According to this embodiment, when SC1 is supplied to the substrate W, superheated water vapor is supplied to the processing space, so that the temperature of SC1 supplied to the upper surface of the substrate W can be increased. As a result, the main surface of the substrate W becomes easily oxidized by SC1.

After a preset time has passed since the start of spraying SC1, the control device 101 (control unit 102) controls the second liquid supply unit 620 described with reference to FIG. 4(b) to stop spraying SC1.

After the control device 101 (control unit 102) stops supplying SC1 to the substrate W, it sprays the cleaning liquid from the nozzle 6 to the rotating substrate W (step S47) in the same manner as step S45. As a result, by spraying the cleaning liquid, SC1 is discharged from the upper surface of the substrate W, and a liquid film of the cleaning liquid is formed on the upper surface of the substrate W.

Furthermore, as already described, the control device 101 (control unit 102) stops blowing out superheated steam from the blowing unit 8 during the cleaning process. That is, the control device 101 (control unit 102) stops supplying superheated steam to the processing space.

After a preset time has passed since the start of spraying the cleaning liquid, the control device 101 (control unit 102) controls the cleaning liquid supply unit 630 described with reference to FIG. 4(b) to stop spraying the cleaning liquid. After stopping spraying the cleaning liquid, the control device 101 (control unit 102) controls the rotation speed of the substrate W by the rotary motor unit 4 to remove the cleaning liquid from the upper surface of the substrate W, and performs a drying process to dry the upper surface of the substrate W (step S48). As a result, the process shown in FIG. 8 is completed.

Specifically, the control device 101 (control unit 102) controls the rotary motor unit 4 to rotate the substrate W at high speed. By rotating the substrate W at high speed, the cleaning liquid attached to the substrate W is shaken off. As a result, the substrate W is dried. In addition, as shown in FIG. 15 , during the drying process, the control device 101 (control unit 102) stops blowing out the superheated water vapor from the blow-out unit 8. Specifically, the blowing out of the superheated water vapor is continuously stopped from the cleaning process (step S47) to the drying process.

According to this embodiment, since superheated water vapor is not supplied to the processing space during the drying process, the humidity of the processing space can be reduced compared to the case where superheated water vapor is supplied. Therefore, the substrate W can be dried efficiently.

Furthermore, according to the present embodiment, when SC1 is supplied to the substrate W (step S46), the processing space is filled with superheated water vapor, which can increase the temperature of the substrate W or the components around the substrate W. As a result, the cleaning liquid is heated by the residual heat, so during the drying process, the cleaning liquid is easily evaporated, and the substrate W can be dried efficiently.

Next, referring to FIG. 16(a) and FIG. 16(b), the first variation of the substrate processing apparatus 100 of this embodiment is described. In the first variation, superheated water vapor is supplied from the nozzle 6 to the processing space.

FIG. 16(a) is a bottom view of the nozzle 6 included in the first variation of the substrate processing apparatus 100 of the present embodiment. FIG. 16(b) is a diagram showing the structure of the fluid supply unit 600 included in the first variation of the substrate processing apparatus 100 of the present embodiment. In the following, the nozzle 6 of the first variation is sometimes referred to as "nozzle 6a".

As shown in FIG16(a), the nozzle 6a has an additional blow-out port 8a compared to the nozzle 6 described with reference to FIG4(a). The superheated water vapor is blown out from the blow-out portion 8a. That is, the nozzle 6a functions as a blow-out portion for blowing out the superheated water vapor. In this way, the blow-out portion for blowing out the superheated water vapor can also be included in the fluid supply portion 600.

As shown in FIG16(b), in the first variation, superheated steam is supplied to the nozzle 6a from the superheated steam supply unit 800. The superheated steam supplied to the nozzle 6a from the superheated steam supply unit 800 is blown out from the blowout port 8a described with reference to FIG16(a).

In addition, the blowing portion 8 described with reference to FIG. 2 may or may not be omitted.

Next, referring to FIG. 17(a) and FIG. 17(b), the second variation of the substrate processing apparatus 100 of this embodiment is described. In the second variation, sulfuric acid, hydrogen peroxide, pure water, and ammonia water are sprayed from the nozzle 6 toward the substrate W. In addition, nitrogen gas is supplied from the nozzle 6 to the processing space.

FIG. 17(a) is a bottom view of the nozzle 6 included in the second variation of the substrate processing apparatus 100 of the present embodiment. FIG. 17(b) is a diagram showing the structure of the fluid supply unit 600 included in the second variation of the substrate processing apparatus 100 of the present embodiment. In the following, the nozzle 6 of the second variation is sometimes referred to as "nozzle 6b".

As shown in FIG. 17(a), the nozzle 6b has the first nozzle 61b to the fifth nozzle 65b. The first nozzle 61b to the fifth nozzle 65b are open toward the lower surface (front end) of the nozzle 6b. In addition, the fifth nozzle 65b is annular. The fifth nozzle 65b extends along the outer periphery of the nozzle 6b at the lower surface (front end) of the nozzle 6b. Sulfuric acid is ejected from the first nozzle 61b. Hydrogen peroxide is ejected from the second nozzle 62b. Ammonia is ejected from the third nozzle 63b. Pure water is ejected from the fourth nozzle 64b. Inert gas is ejected from the fifth nozzle 65b. In the second variation, the inert gas is nitrogen.

As shown in FIG. 17(b), in the second variation, the fluid supply unit 600 includes a nozzle 6b, a first liquid medicine supply unit 610b, a second liquid medicine supply unit 620b, a third liquid medicine supply unit 630b, a pure water supply unit 640b, and a gas supply unit 650b.

The first chemical liquid supply unit 610b supplies sulfuric acid to the nozzle 6b. The sulfuric acid supplied from the first chemical liquid supply unit 610b to the nozzle 6b is ejected from the first ejection port 61b described with reference to FIG. 17(a).

Specifically, the first liquid medicine supply unit 610b has a first liquid medicine supply pipe 612b, a first liquid medicine on-off valve 614b, and a heater 616b. A portion of the first liquid medicine supply pipe 612b is accommodated in the chamber 201 described with reference to FIG. 2. The first liquid medicine on-off valve 614b and the heater 616b are accommodated in the fluid box 10B described with reference to FIG. 1.

The first chemical liquid supply pipe 612b supplies sulfuric acid to the nozzle 6b. Specifically, the first chemical liquid supply pipe 612b is a tubular component that allows sulfuric acid to flow to the nozzle 6b. The heater 616b is installed in the first chemical liquid supply pipe 612b. The heater 616b heats the sulfuric acid flowing through the first chemical liquid supply pipe 612b.

The first liquid medicine opening and closing valve 614b is installed in the first liquid medicine supply piping 612b. The first liquid medicine opening and closing valve 614b can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the first liquid medicine opening and closing valve 614b. The actuator of the first liquid medicine opening and closing valve 614b is, for example, a pneumatic actuator or an electric actuator.

When the first chemical liquid on-off valve 614b is set to an open state, sulfuric acid flows toward the nozzle 6b through the first chemical liquid supply pipe 612b. As a result, sulfuric acid is sprayed from the nozzle 6b to the substrate W. When the first chemical liquid on-off valve 614b is set to a closed state, the flow of sulfuric acid through the first chemical liquid supply pipe 612b stops. Therefore, the supply of sulfuric acid from the nozzle 6b to the substrate W stops.

The second chemical liquid supply unit 620b supplies hydrogen peroxide to the nozzle 6b. The hydrogen peroxide supplied from the second chemical liquid supply unit 620b to the nozzle 6b is ejected from the second ejection port 62b described with reference to FIG. 17(a).

Specifically, the second liquid medicine supply section 620b has a second liquid medicine supply pipe 622b and a second liquid medicine on-off valve 624b. A portion of the second liquid medicine supply pipe 622b is accommodated in the chamber 201 described with reference to FIG. 2. The second liquid medicine on-off valve 624b is accommodated in the fluid box 10B described with reference to FIG. 1.

The second liquid supply pipe 622b supplies hydrogen peroxide to the nozzle 6b. Specifically, the second liquid supply pipe 622b is a tubular component that allows hydrogen peroxide to flow to the nozzle 6b.

The second liquid medicine opening and closing valve 624b is installed in the second liquid medicine supply piping 622b. The second liquid medicine opening and closing valve 624b can be switched between an open state and a closed state. The control device 101 (control unit 102) controls the opening and closing action of the second liquid medicine opening and closing valve 624b. The actuator of the second liquid medicine opening and closing valve 624b is, for example, a pneumatic actuator or an electric actuator.

When the second liquid on-off valve 624b is set to an open state, hydrogen peroxide flows toward the nozzle 6b through the second liquid supply pipe 622b. As a result, hydrogen peroxide is sprayed from the nozzle 6b to the substrate W. When the second liquid on-off valve 624b is set to a closed state, the flow of sulfuric acid through the second liquid supply pipe 622b stops. Therefore, the supply of hydrogen peroxide from the nozzle 6b to the substrate W stops.

When supplying SPM to substrate W, control device 101 (control unit 102) sets first chemical liquid on/off valve 614b and second chemical liquid on/off valve 624b to an open state. As a result, sulfuric acid and hydrogen peroxide water are mixed on the upper surface of substrate W, and SPM is supplied to the upper surface of substrate W.

The third liquid medicine supply section 630b supplies ammonia water to the nozzle 6b. The ammonia water supplied from the third liquid medicine supply section 630b to the nozzle 6b is ejected from the third ejection port 63b described with reference to FIG. 17(a).

Specifically, the third liquid medicine supply section 630b has a third liquid medicine supply pipe 632b and a third liquid medicine on-off valve 634b. A portion of the third liquid medicine supply pipe 632b is accommodated in the chamber 201 described with reference to FIG. 2. The third liquid medicine on-off valve 634b is accommodated in the fluid box 10B described with reference to FIG. 1.

The third chemical liquid supply piping 632b supplies ammonia solution to the nozzle 6b. The third chemical liquid on-off valve 634b is installed in the third chemical liquid supply piping 632b. The third chemical liquid on-off valve 634b can be switched between an open state and a closed state. When the third chemical liquid on-off valve 634b is in an open state, ammonia solution flows through the third chemical liquid supply piping 632b and is supplied to the nozzle 6b. When the third chemical liquid on-off valve 634b is in a closed state, the supply of ammonia solution to the nozzle 6b is stopped. The control device 101 (control unit 102) controls the opening and closing action of the third chemical liquid on-off valve 634b. Since the structure of the third liquid medicine supply section 630b is roughly the same as that of the second liquid medicine supply section 620b, its detailed description is omitted.

The pure water supply section 640b supplies pure water to the nozzle 6b. The pure water supplied from the pure water supply section 640b to the nozzle 6b is ejected from the fourth ejection port 64b described with reference to FIG. 17(a).

Specifically, the pure water supply section 640b has a pure water supply pipe 642b and a pure water on-off valve 644b. A portion of the pure water supply pipe 642b is accommodated in the chamber 201 described with reference to FIG. 2 . The pure water on-off valve 644b is accommodated in the fluid box 10B described with reference to FIG. 1 .

The pure water supply piping 642b supplies pure water to the nozzle 6b. The pure water on-off valve 644b is installed in the pure water supply piping 642b. The pure water on-off valve 644b can be switched between an open state and a closed state. When the pure water on-off valve 644b is in an open state, pure water flows through the pure water supply piping 642b and supplies pure water to the nozzle 6b. When the pure water on-off valve 644b is in a closed state, the supply of pure water to the nozzle 6b is stopped. The control device 101 (control unit 102) controls the opening and closing action of the pure water on-off valve 644b. Since the structure of the pure water supply part 640b is roughly the same as that of the second liquid medicine supply part 620b, its detailed description is omitted.

When supplying SC1 to substrate W, control device 101 (control unit 102) sets second chemical solution on/off valve 624b, third chemical solution on/off valve 634b and pure water on/off valve 644b to an open state. As a result, ammonia water, hydrogen peroxide and pure water are mixed on the upper surface of substrate W, and SC1 is supplied to the upper surface of substrate W.

In the second variation, the cleaning liquid is pure water. The control device 101 (control unit 102) sets the pure water on-off valve 644b to an open state during the cleaning process.

The gas supply section 650b supplies nitrogen gas to the nozzle 6b. The nitrogen gas supplied from the gas supply section 650b to the nozzle 6b is ejected from the fifth ejection port 65b shown in FIG. 17(a).

Specifically, the gas supply section 650b has a gas supply pipe 652b and a gas on-off valve 654b. A portion of the gas supply pipe 652b is accommodated in the chamber 201 described with reference to FIG. 2 . The gas on-off valve 654b is accommodated in the fluid box 10B described with reference to FIG. 1 .

The gas supply piping 652b supplies nitrogen gas to the nozzle 6b. The gas on-off valve 654b is installed in the gas supply piping 652b. The gas on-off valve 654b can be switched between an open state and a closed state. When the gas on-off valve 654b is in an open state, nitrogen gas flows through the gas supply piping 652b to supply nitrogen gas to the nozzle 6b. When the gas on-off valve 654b is in a closed state, the supply of nitrogen gas to the nozzle 6b is stopped. The control device 101 (control unit 102) controls the opening and closing action of the gas on-off valve 654b. Since the structure of the gas supply unit 650b is substantially the same as that of the second liquid supply unit 620b, its detailed description is omitted.

Next, referring to FIG. 18(a) and FIG. 18(b), the third variation of the substrate processing apparatus 100 of this embodiment is described. In the third variation, superheated water vapor is supplied from the nozzle 6 to the processing space.

FIG. 18(a) is a bottom view of the nozzle 6 included in the third variation of the substrate processing apparatus 100 of the present embodiment. FIG. 18(b) is a diagram showing the structure of the fluid supply unit 600 included in the third variation of the substrate processing apparatus 100 of the present embodiment. In the following, the nozzle 6 of the third variation is sometimes referred to as "nozzle 6c".

As shown in FIG. 18(a), the nozzle 6c has a first nozzle 61c, a second nozzle 62c, a third nozzle 63c, a fourth nozzle 64c, a fifth nozzle 65c and a blow-out port 8a. The first nozzle 61c to the fifth nozzle 65c of the nozzle 6c are equivalent to the first nozzle 61b to the fifth nozzle 65b of the nozzle 6b shown in FIG. 17(a). That is, the nozzle 6c has an additional blow-out port 8a compared to the nozzle 6b described with reference to FIG. 17(a). Superheated water vapor is blown out from the blow-out portion 8a. Therefore, the nozzle 6c functions as a blow-out portion that blows out superheated water vapor. In this way, the blow-out portion that blows out superheated water vapor can also be included in the fluid supply portion 600.

As shown in FIG18(b), in the third variation, superheated steam is supplied to the nozzle 6c from the superheated steam supply unit 800. The superheated steam supplied to the nozzle 6c from the superheated steam supply unit 800 is blown out from the blowout port 8a described with reference to FIG18(a).

In addition, the blowing portion 8 described with reference to FIG. 2 may or may not be omitted.

The above has been described with reference to the drawings (FIG. 1 to FIG. 18(b)) to illustrate the implementation of the present invention. However, the present invention is not limited to the above implementation, and can be implemented in various forms without departing from the scope of its main purpose. In addition, the multiple components disclosed in the above implementation can be appropriately changed. For example, a certain component of all the components shown in a certain implementation can be added to the components of other implementations, or some of the components of all the components shown in a certain implementation can be deleted from the implementation.

In order to facilitate the understanding of the invention, the drawings schematically show each component element on the main body, and there are cases where the thickness, length, number, spacing, etc. of each component element shown in the drawings are different from the actual ones for the convenience of making the drawings. In addition, the composition of each component element shown in the above-mentioned implementation form is an example and is not particularly limited. Various changes can be made within the scope of the effect of the invention in essence.

For example, in the embodiment described with reference to FIG. 1 to FIG. 18(b), the rotary chuck 3 is a clamping chuck in which a plurality of chuck components 31 are in contact with the peripheral end surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the rotary chuck 3 may be a vacuum chuck or a Bernoulli chuck.

In addition, in the embodiment described with reference to FIG. 1 to FIG. 18(b), when hydrogen peroxide is supplied to the substrate W (step S44 of FIG. 8), the control device 101 (control unit 102) reduces the flow rate of the superheated water vapor blown out from the blow-out unit 8, but when hydrogen peroxide is supplied to the substrate W (step S44 of FIG. 8), the control device 101 (control unit 102) may stop blowing the superheated water vapor from the blow-out unit 8. In addition, in this case, the control device 101 (control unit 102) continues to stop supplying superheated water vapor to the processing space until the cleaning process (step S45 of FIG. 8) is performed.

In the embodiments described with reference to FIG. 1 to FIG. 18(b), the substrate heating unit 5 heats the substrate W by means of a heater, and the components used by the substrate heating unit 5 to heat the substrate W are not particularly limited as long as they can heat the substrate W. For example, the substrate heating unit 5 can also heat the substrate W by laser irradiation or light irradiation.

In addition, in the embodiment described with reference to FIG. 1 to FIG. 18(b), a substrate heating unit 5 is provided in the substrate processing device 100, but the substrate heating unit 5 may be omitted. In this case, superheated water vapor may be used for preheating.

In addition, in the implementation form described with reference to FIG. 1 to FIG. 18(b), an immersion treatment is performed, but the immersion treatment may also be omitted.

Furthermore, the substrate processing device 100 can also supply superheated water vapor to the processing space from the blowing section 8 when the interior of the processing space is cleaned. As a result, after the interior of the processing space is cleaned, it is easy to dry the processing space forming section 70 or the components arranged in the processing space.

Specifically, after the inside of the processing space is cleaned, an inert gas such as nitrogen is supplied to the processing space to dry the processing space forming part 70 or the components arranged in the processing space. However, when cleaning the inside of the processing space, a large amount of pure water is used. Therefore, the inside of the processing space after cleaning becomes difficult to dry. In contrast, when cleaning the inside of the processing space, the temperature of the processing space forming part 70 or the components arranged in the processing space can be increased by supplying superheated water vapor to the processing space from the blow-out part 8. As a result, after cleaning the inside of the processing space, the processing space forming part 70 or the components arranged in the processing space can be dried efficiently.

In addition, the internal cleaning of the processing space can be performed, for example, every time the substrate processing unit 2 processes a preset number of substrates W (for example, 24 substrates). Alternatively, the internal cleaning of the processing space can also be performed every time a preset time has passed.

[Industrial availability]

The present invention is useful for devices for processing substrates and has industrial applicability.

2: Substrate processing unit

3: Rotating chuck

4: Rotating motor part

5: Substrate heating unit

6: Nozzle

8: Blowing section

20: Mobile mechanism

21: Maintaining Department

22: Arms

23: Arm base

24: Lifting unit

31: Clamping plate components

32: Rotating base

41: Axis

42: Motor body

51: Heating component

52: Lifting shaft

53: Power Supply Department

54: Heater lifting part

70: Processing space formation unit

71: Liquid receiving part

71a: Top

72: Blocking member

72a: Through hole

81: 1st blowing part

82: Second blowing section

100: Substrate processing device

101: Control device

102: Control Department

103: Memory Department

201: Chamber

202: Exhaust pipe

600: Fluid supply unit

711: Protective parts

712: Guidance Department

713: inclined part

714: Protective component lifting unit

721: Top cover

722: Side wall

AX: rotation axis

W: Substrate

Claims (16)

A substrate processing device comprises: a chamber for accommodating a substrate; a substrate holding part for holding the substrate in the chamber; a processing space forming part including an opposing member facing the substrate held by the substrate holding part to form a processing space for processing the substrate; a substrate rotating part for rotating the substrate held by the substrate holding part; a processing liquid supply part for supplying a first mixed liquid of sulfuric acid and hydrogen peroxide to the substrate rotated by the substrate rotating part; and a superheated water vapor blowing part for blowing superheated water vapor into the processing space. A substrate processing device as claimed in claim 1, wherein the superheated water vapor blowing section includes a first superheated water vapor blowing section disposed above the substrate. A substrate processing device as claimed in claim 2, wherein the first superheated water vapor blowing section is supported by the opposing component. As in claim 2, the substrate processing device, wherein the first superheated water vapor blowing section is included in the processing liquid supply section. A substrate processing device as claimed in any one of claims 1 to 4, wherein the processing space forming portion further includes a liquid receiving portion, the liquid receiving portion receiving the first mixed liquid discharged from the substrate rotated by the substrate rotating portion, and the superheated water vapor blowing portion includes a second superheated water vapor blowing portion supported by the liquid receiving portion. The substrate processing device of claim 1 further comprises a control unit, which controls the supply of the first mixed liquid and the blowing of the superheated water vapor, and when the first mixed liquid is supplied, the control unit blows out the superheated water vapor. As in claim 6, the control unit further controls the rotation of the substrate through the substrate rotating unit. When the first mixed liquid is supplied, the control unit controls the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate. The control unit stops supplying the first mixed liquid and controls the rotation speed of the substrate to form an immersion state in which the liquid film is supported on the upper surface of the substrate. When the immersion state is formed, the control unit blows out the superheated water vapor. As in claim 6 or 7, the substrate processing device, wherein the processing liquid supply unit supplies the first mixed liquid and hydrogen peroxide to the substrate in a mutually exclusive manner, and the control unit further controls the supply of the hydrogen peroxide. When the control unit supplies the hydrogen peroxide, it stops blowing out the superheated water vapor. The substrate processing device of claim 6 or 7, wherein the processing liquid supply unit supplies the first mixed liquid and the hydrogen peroxide to the substrate mutually exclusively, and the control unit further controls the supply of the hydrogen peroxide. When supplying the first mixed liquid, the control unit blows out the superheated water vapor at a first flow rate, and when supplying the hydrogen peroxide, the control unit blows out the superheated water vapor at a second flow rate that is less than the first flow rate. As in claim 6 or 7, the substrate processing device, wherein the processing liquid supply unit supplies the second mixed liquid of ammonia water, hydrogen peroxide water and pure water to the substrate mutually exclusively with the first mixed liquid, and the control unit further controls the supply of the second mixed liquid, and the control unit blows out the superheated water vapor when supplying the second mixed liquid. A substrate processing method includes the following steps: holding a substrate in a chamber by a substrate holding portion; forming a processing space for processing the substrate by a processing space forming portion including an opposing member opposing the substrate held by the substrate holding portion; and blowing superheated water vapor into the processing space. The substrate processing method of claim 11 further comprises the following steps: rotating the substrate held by the substrate holding portion; supplying a first mixed liquid containing sulfuric acid and hydrogen peroxide to the rotating substrate; and blowing out the superheated water vapor when supplying the first mixed liquid. The substrate processing method of claim 12 further comprises the following steps: when supplying the first mixed liquid, controlling the rotation speed of the substrate to form a liquid film of the first mixed liquid on the upper surface of the substrate; and stopping supplying the first mixed liquid and controlling the rotation speed of the substrate to form an immersion state in which the liquid film is supported on the upper surface of the substrate; and when the immersion state is formed, blowing out the superheated water vapor. The substrate processing method of claim 12 or 13 further includes the step of supplying hydrogen peroxide to the rotating substrate, and stopping blowing the superheated water vapor when supplying the hydrogen peroxide. The substrate processing method of claim 12 or 13 further comprises the step of supplying hydrogen peroxide to the rotating substrate, blowing out the superheated water vapor at a first flow rate when supplying the first mixed liquid, and blowing out the superheated water vapor at a second flow rate less than the first flow rate when supplying the hydrogen peroxide. The substrate processing method of any one of claims 11 to 13 further comprises the following steps: rotating the substrate held by the substrate holding portion; supplying a second mixed liquid containing ammonia water, hydrogen peroxide and pure water to the rotating substrate; and blowing out the superheated water vapor when supplying the second mixed liquid.