JP2018182294A - Dicing die bond film - Google Patents

Abstract

An adhesive layer on a dicing tape is cleaved well in an expanding process in which a dicing die bond film (DDAF) is used to obtain a semiconductor chip with an adhesive layer. A DDAF suitable for realizing a good pickup is provided. The DDAF of the present invention includes a dicing tape and an adhesive layer. The dicing tape 10 includes an adhesive layer 12 containing a first acrylic polymer containing lauryl (meth) acrylate and 2-hydroxyethyl (meth) acrylate as constituent monomers. The adhesive layer 20 is in close contact with the pressure-sensitive adhesive layer 12 and includes a second acrylic polymer having a nitrile group. In the infrared absorption spectrum of the second acrylic polymer, the ratio of the peak height in the vicinity of 2240 cm -1 derived from the nitrile group to the height of the peak in the vicinity of 1730 cm -1 derived from the carbonyl group is 0.01 to 0.1. . [Selection] Figure 1

Description

  The present invention relates to a dicing die bond film which can be used in the manufacturing process of a semiconductor device.

  In the process of manufacturing a semiconductor device, a dicing die bond film may be used to obtain a semiconductor chip with an adhesive film of a chip equivalent size for die bonding, that is, a semiconductor chip with an adhesive layer for die bonding. The dicing die-bonding film has a size corresponding to the semiconductor wafer to be processed, and for example, a dicing tape comprising a substrate and an adhesive layer, and a die-bonding film peelably adhered to the adhesive layer side Agent layer).

  As one of methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known which involves a process for expanding a dicing tape in the dicing die bond film and cleaving the die bond film. In this method, first, a semiconductor wafer is bonded onto a die bond film of a dicing die bond film. The semiconductor wafer is, for example, processed so that it can be cut later together with a die bonding film and separated into a plurality of semiconductor chips. Next, an expanding device is used to cleave the die bond film such that multiple adhesive film pieces, each in intimate contact with the semiconductor chip, result from the die bond film on the dicing tape, and the dicing tape for the dicing die bond film is used. The semiconductor wafer is stretched in two dimensions including radial and circumferential directions. In this expanding step, cutting also occurs in the semiconductor wafer on the die bonding film at a location corresponding to the cutting location in the die bonding film, and the semiconductor wafer is separated into a plurality of semiconductor chips on the dicing die bonding film or dicing tape. Next, the expanding step is performed again to increase the separation distance for the plurality of adhesive layer-provided semiconductor chips after cutting on the dicing tape. Next, for example, after passing through a cleaning process, each semiconductor chip is pushed up by the pin member of the pickup mechanism from the lower side of the dicing tape together with the die bond film of the chip equivalent size closely adhered to it, and then picked up from above the dicing tape Ru. In this way, a semiconductor chip with a die bond film or adhesive layer is obtained. The semiconductor chip with an adhesive layer is fixed by die bonding to an adherend such as a mounting substrate via the adhesive layer. For example, about the technique regarding the dicing die-bonding film used as mentioned above, it describes in the following patent documents 1-3, for example.

JP 2007-2173 A JP, 2010-177401, A JP, 2016-115804, A

  FIG. 14 shows a conventional dicing die bond film Y in a schematic cross-sectional view. The dicing die bond film Y is composed of a dicing tape 60 and a die bond film 70. The dicing tape 60 has a laminated structure of a base material 61 and an adhesive layer 62 that exerts an adhesive force. The die-bonding film 70 is in close contact with the pressure-sensitive adhesive layer 62 by the adhesive force of the pressure-sensitive adhesive layer 62. Such a dicing die bond film Y has a disk shape of a size corresponding to a semiconductor wafer to be processed or a workpiece in the manufacturing process of a semiconductor device, and can be used in the above-mentioned expanding step. For example, as shown in FIG. 15, in the state where the semiconductor wafer 81 is bonded to the die bond film 70 and the ring frame 82 is bonded to the pressure-sensitive adhesive layer 62, the above-mentioned expanding step is performed. The semiconductor wafer 81 is, for example, processed so as to be singulated into a plurality of semiconductor chips. The ring frame 82 is a frame member with which a transport mechanism such as a transport arm provided in the expand device mechanically abuts at the time of workpiece transport in a state of being attached to the dicing die bond film Y. The conventional dicing die bonding film Y is designed such that such a ring frame 82 can be fixed to the film by the adhesive force of the adhesive layer 62 of the dicing tape 60. That is, the conventional dicing die bond film Y has a design in which a ring frame attachment area is secured around the die bond film 70 in the adhesive layer 62 of the dicing tape 60. In such a design, the distance in the film in-plane direction between the outer peripheral end 62 e of the pressure-sensitive adhesive layer 62 and the outer peripheral end 70 e of the die bond film 70 is about 10 to 30 mm.

  The present invention has been conceived under the circumstances as described above, and the purpose thereof is that on a dicing tape in an expanding step in which a dicing die bond film is used to obtain a semiconductor chip with an adhesive layer. It is an object of the present invention to provide a dicing die-bonding film suitable for satisfactorily cleaving an adhesive layer and achieving a good pickup for a semiconductor chip with an adhesive layer after cleaving.

The dicing die bond film provided by the present invention comprises a dicing tape and an adhesive layer. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive layer peelably adheres to the pressure-sensitive adhesive layer in the dicing tape. The pressure-sensitive adhesive layer of the dicing tape contains a first acrylic polymer containing at least a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate. The first acrylic polymer is an acrylic copolymer containing at least lauryl (meth) acrylate and 2-hydroxyethyl (meth) acrylate as constituent monomers. In the present invention, "(meth) acrylate" represents "acrylate" and / or "methacrylate". On the other hand, the adhesive layer on the pressure-sensitive adhesive layer of the dicing tape contains a second acrylic polymer having a nitrile group. In the infrared absorption spectrum of this second acrylic polymer, 2240 cm ⁻ derived from the nitrile group with respect to the height of a peak around 1730 cm ⁻¹ derived from the carbonyl group (peak of absorption attributed to C = O stretching vibration) The value of the height ratio of the peak near ¹ (the peak of absorption attributed to C≡N stretching vibration) is 0.01 or more, preferably 0.015 or more, more preferably 0.02 or more. And 0.1 or less, preferably 0.09 or less, more preferably 0.08 or less. That is, the relative content of the nitrile group of the second acrylic polymer is such that the value of the ratio falls within such a range. The dicing die-bonding film of such a configuration can be used to obtain a semiconductor chip with an adhesive layer in the process of manufacturing a semiconductor device. Further, in the present dicing die-bonding film, for example, a process of applying a composition for forming an adhesive layer on an adhesive layer formed on a predetermined separator and drying it to form an adhesive layer, or A composition for forming an adhesive layer is coated on a pressure-sensitive adhesive layer formed on a predetermined substrate and dried to form an adhesive layer, and the method (laminate coating method) is used. It is possible.

  In the process of manufacturing a semiconductor device, as described above, there may be a case where an expanding step performed using a dicing die bond film, ie, an expanding step for cutting, is performed to obtain a semiconductor chip with an adhesive layer. is there. In this expanding step, it is necessary that cutting force appropriately act on the adhesive layer on the dicing tape in the dicing die bonding film. The pressure-sensitive adhesive layer of the dicing tape in the present dicing die-bonding film contains, as described above, the first acrylic polymer containing at least a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate . Both the constitution that the acrylic polymer in the pressure-sensitive adhesive layer contains a lauryl (meth) acrylate-derived unit and the arrangement containing a 2-hydroxyethyl (meth) acrylate-derived unit both adhere the pressure-sensitive adhesive layer of the dicing tape and the adhesive thereon. Suitable for achieving high shear adhesion with the agent layer, and therefore suitable for applying a cutting force to the adhesive layer on the dicing tape expanded in the in-plane direction in the expanding step. . At the same time, as described above, the adhesive layer in the present dicing die bond film contains the second acrylic polymer having a nitrile group. Such a configuration is preferable in order to increase the modulus of elasticity of the adhesive layer, and thus contributes to achieving good cleaving of the adhesive layer in the expanding step for cleaving.

  In addition, in the present dicing die-bonding film, the first acrylic polymer in the pressure-sensitive adhesive layer contains a lauryl (meth) acrylate-derived unit and the second acrylic polymer in the adhesive layer has a nitrile group. It is preferable in order to suppress the binding interaction which acts in the lamination direction between both layers while securing high shear adhesion as described above in the layers. In the case where the pressure-sensitive adhesive layer and the adhesive layer are formed by laminating through the above-mentioned lamination coating method, for example, although the bonding interaction acting in the laminating direction between the two layers is likely to be excessive, acrylic of the pressure-sensitive adhesive layer The configuration in which the polymer contains a lauryl (meth) acrylate-derived unit and the acrylic polymer of the adhesive layer has a nitrile group is a bonding that works in the laminating direction between the two layers while securing high shear adhesion between the two layers. It is suitable for suppressing the interaction. And, the value of the above-mentioned ratio regarding the absorption peak in the infrared absorption spectrum of the second acrylic polymer is 0.01 or more, preferably 0.015 or more, more preferably 0.02 or more. The above-described configuration in which the relative content of the nitrile group of the base polymer is set is suitable for facilitating peeling or pickup of the semiconductor chip with an adhesive layer from the adhesive layer in the pickup step. At the same time, the value of the above ratio of the absorption peak in the infrared absorption spectrum of the second acrylic polymer is 0.1 or less, preferably 0.09 or less, more preferably 0.08 or less. The above-described configuration in which the relative content of the nitrile group of the acrylic polymer is set suppresses the occurrence of partial peeling, that is, floating from the adhesive layer of the semiconductor chip with an adhesive layer which has been broken in the expanding step. Preferred.

  As described above, the dicing die-bonding film of the present invention is suitable for satisfactorily cleaving the adhesive layer on the dicing tape in the expanding step and for achieving good pickup of the semiconductor chip with the adhesive layer in the pickup step It is

  In the present dicing die bond film, the dicing tape or the pressure sensitive adhesive layer thereof and the adhesive layer thereon are substantially formed in the in-plane direction of the film so that the adhesive layer includes the frame affixing area in addition to the work affixing area. It is possible to design with the same dimensions. For example, in the in-plane direction of the dicing die bond film, it is possible to adopt a design in which the outer peripheral edge of the adhesive layer is within a distance of 1000 μm from the outer peripheral edge of the base of the dicing tape or the adhesive layer. Such a present dicing die bond film forms one dicing tape having a laminated structure of a substrate and an adhesive layer, for example, after the lamination formation of an adhesive layer and an adhesive layer by the above-mentioned lamination coating method. It is suitable for carrying out the processing for forming an adhesive layer and the processing for forming an adhesive layer collectively by processing such as punching processing.

  In the manufacturing process of the conventional dicing die bond film Y described above, a processing step (first processing step) for forming the dicing tape 60 of a predetermined size and shape, and a die bond film 70 of a predetermined size and shape A processing step (second processing step) for forming is required as a separate step. In the first processing step, for example, a predetermined separator, a base material layer to be formed into the base material 61, and an adhesion formed to be formed into the pressure-sensitive adhesive layer 62 between them. The laminated sheet body having a laminated structure with the agent layer is subjected to a process in which the processing blade is pushed from the side of the base layer to the separator. Thereby, the dicing tape 60 having a laminated structure of the pressure-sensitive adhesive layer 62 on the separator and the base 61 is formed on the separator. In the second processing step, for example, for a laminated sheet body having a laminated structure of a predetermined separator and an adhesive layer to be formed into a die bond film 70, from the adhesive layer side to the separator Processing is performed to make the processing blade plunge. Thereby, the die-bonding film 70 is formed on the separator. The dicing tape 60 and the die bond film 70 thus formed in separate steps are then laminated while being aligned. FIG. 16 shows a conventional dicing die bond film Y with a separator 83 covering the die bond film 70 surface and the adhesive layer 62 surface.

  On the other hand, the dicing die-bonding film of the present invention in the case where the dicing tape or the adhesive layer thereof and the adhesive layer thereon have substantially the same design dimensions in the film in-plane direction is, for example, the above-mentioned laminate coating A process for forming a dicing tape having a laminated structure of a base material and an adhesive layer, and a method for forming an adhesive layer after laminating an adhesive layer and an adhesive layer by a method It is suitable to carry out the process and the process at one time such as a punching process. Such a present dicing die bond film is suitable for achieving good pick-up of a semiconductor chip with an adhesive layer in the pick-up process while cutting the adhesive layer well in the expanding step, and reducing the number of manufacturing processes. It is suitable for efficient manufacturing from the viewpoint of the point of

  The epoxy value of the second acrylic polymer in the adhesive layer of the present dicing die-bonding film is preferably 0.05 eq / kg or more, more preferably 0.1 eq / kg or more, more preferably 0.2 eq / kg or more . Such a configuration ensures adhesion or adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon, and in the expanding step, the partial area from the pressure-sensitive adhesive layer of the semiconductor chip with the adhesive layer is Is suitable for suppressing the occurrence of excessive peeling or floating. The epoxy value of the second acrylic polymer is preferably 1 eq / kg or less, more preferably 0.9 eq / kg or less. Such a configuration is preferable in suppressing the bonding interaction acting in the laminating direction between the adhesive layer and the adhesive layer of the dicing tape, and thus contributes to the realization of a good pickup in the pickup process. The content ratio of such an epoxy value-based second acrylic polymer in the adhesive layer is preferably 5 to 95% by mass, more preferably 40 to 80% by mass.

  The carboxylic acid value of the second acrylic polymer in the adhesive layer in the present dicing die-bonding film is preferably 1 mg KOH / g or more, more preferably 3 mg KOH / g or more, more preferably 5 mg KOH / g or more. Such a configuration ensures adhesion or adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon, and in the expanding step, the partial area from the pressure-sensitive adhesive layer of the semiconductor chip with the adhesive layer is Is suitable for suppressing the occurrence of excessive peeling or floating. The carboxylic acid value of the second acrylic polymer is preferably 20 mg KOH / g or less, more preferably 18 mg KOH / g or less. Such a configuration is suitable for suppressing the bonding interaction acting in the laminating direction between the adhesive layer and the adhesive layer of the dicing tape, and thus, to realize a good pickup in the pickup process. To contribute. The content ratio of the second acrylic polymer having such a carboxylic acid value in the adhesive layer is preferably 5 to 95% by mass, more preferably 40 to 80% by mass.

  In the first acrylic polymer in the pressure-sensitive adhesive layer in the present dicing die-bonding film, the molar ratio of units derived from lauryl (meth) acrylate to units derived from 2-hydroxyethyl (meth) acrylate is preferably 1 or more, more preferably Is 3 or more, more preferably 5 or more. Such a configuration ensures the high shear adhesion as described above between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon, but suppresses the binding interaction acting in the laminating direction between the two layers. And therefore contribute to the realization of a good pickup in the pickup process. Further, the molar ratio is preferably 40 or less, more preferably 35 or less, and more preferably 30 or less. Such a configuration ensures the adhesion or adhesion between the pressure-sensitive adhesive layer and the adhesive layer of the dicing tape, and partial peeling from the pressure-sensitive adhesive layer of the semiconductor chip with the adhesive layer in the expanding step, It is suitable for suppressing the occurrence of floating.

  In the present dicing die bond film, the pressure-sensitive adhesive layer of the dicing tape is preferably a radiation-curable pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min. The peeling force between the adhesive layer and the adhesive layer is preferably 0.04 N / 20 mm or more, more preferably 0.05 N / 20 mm or more, more preferably 0.08 N / 20 mm or more. Such a configuration ensures adhesion or adhesion between the pressure-sensitive adhesive layer of the dicing tape and the adhesive layer thereon, and in the expanding step, the partial area from the pressure-sensitive adhesive layer of the semiconductor chip with the adhesive layer is Is suitable for suppressing the occurrence of excessive peeling or floating. The peel strength between the adhesive layer and the adhesive layer after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peel speed of 300 mm / min is preferably 0.3 N / 20 mm or less, more preferably It is 0.25 N / 20 mm or less, more preferably 0.22 N / 20 mm or less. Such a configuration is suitable for realizing a good pickup in the pickup process.

  The first acrylic polymer in the pressure-sensitive adhesive layer in the present dicing die-bonding film is preferably an adduct of an unsaturated functional group-containing isocyanate compound which is a radiation polymerizable component. In this case, the molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is preferably 0.1 or more, more preferably 0.2 or more, more preferably Is 0.3 or more. These configurations are suitable for appropriately increasing the modulus of elasticity of the pressure-sensitive adhesive layer through the reaction of the first acrylic polymer and the unsaturated functional group-containing isocyanate compound, and good cleavage of the adhesive layer in the expanding step. Contributing to In addition, from the viewpoint of reduction of low molecular weight components in the pressure-sensitive adhesive layer after curing, the first acrylic polymer for forming the first acrylic polymer to which the unsaturated functional group-containing isocyanate compound is added and the unsaturated functional group-containing In the reaction composition containing an isocyanate compound, the molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate of the first acrylic polymer is preferably 2 or less, more preferably It is 1.5 or less, more preferably 1.3 or less.

It is a cross-sectional schematic diagram of the dicing die-bonding film which concerns on one Embodiment of this invention. It represents an example of the case where the dicing die bond film shown in FIG. 1 is accompanied by a separator. 7 illustrates an example of a method of manufacturing a dicing die bond film shown in FIG. 7 illustrates a part of steps in a semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 7 represents a step following the step shown in FIG. 10 represents a step following the step shown in FIG. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. FIG. 7 illustrates a part of steps in a variation of the semiconductor device manufacturing method in which the dicing die bond film shown in FIG. 1 is used. It is a cross-sectional schematic diagram of the conventional dicing die-bonding film. Fig. 15 illustrates a usage of the dicing die bond film shown in Fig. 14. 17 illustrates one supply form of a dicing die bond film shown in FIG.

  FIG. 1 is a schematic cross-sectional view of a dicing die bond film X according to one embodiment of the present invention. The dicing die bond film X has a laminated structure including the dicing tape 10 and the adhesive layer 20. The dicing tape 10 has a laminated structure including the substrate 11 and the adhesive layer 12. The adhesive layer 20 adheres releasably to the pressure-sensitive adhesive layer 12 of the dicing tape 10 or the pressure-sensitive adhesive surface 12 a thereof. The dicing die bond film X can be used, for example, in an expanding step as described later in the process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device, and is a disk having a size corresponding to a workpiece such as a semiconductor wafer. It has a shape. The diameter of the dicing die bond film X is, for example, within the range of 345 to 380 mm (12 inch wafer compatible type) within the range of 245 to 280 mm (8 inch wafer compatible type) within the range of 195 to 230 mm (6 inch wafer compatible type Or within the range of 495 to 530 mm (18 inch wafer compatible).

  The base material 11 of the dicing tape 10 is an element functioning as a support in the dicing tape 10 to the dicing die bond film X. For the substrate 11, for example, a plastic substrate such as a plastic film can be suitably used. Examples of the constituent material of the plastic base include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, Aramid, fluororesin, cellulose resin, and silicone resin are mentioned. Examples of the polyolefin include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, Ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer Coalescence is mentioned. Polyesters include, for example, polyethylene terephthalate (PET), polyethylene naphthalate, and polybutylene terephthalate (PBT). The substrate 11 may be made of one type of material, or may be made of two or more types of materials. The substrate 11 may have a single layer structure or a multilayer structure. From the viewpoint of securing good heat shrinkability in the base material 11 and maintaining the chip separation distance realized in the expansion step for separation described later using partial heat shrinkage of the dicing tape 10 to the base material 11 The base material 11 preferably contains an ethylene-vinyl acetate copolymer as a main component. The main component of the base material 11 is a component that occupies the largest mass ratio in the constituent components. When the substrate 11 is made of a plastic film, the substrate 11 may be a non-oriented film, a uniaxially-oriented film, or a biaxially-oriented film. When the pressure-sensitive adhesive layer 12 on the substrate 11 is of the ultraviolet curing type as described later, it is preferable that the substrate 11 have ultraviolet transparency.

  When the dicing tape 10 to the substrate 11 is shrunk by, for example, partial heating when using the dicing die bond film X, for example, the chip separation distance realized in the expanding step for separation described later In the case of maintaining by utilizing partial heat shrinkage, the substrate 11 preferably has heat shrinkability. When the substrate 11 is made of a plastic film, the substrate 11 is preferably a biaxially stretched film in order to achieve isotropic heat shrinkability of the dicing tape 10 to the substrate 11. The dicing tape 10 to the substrate 11 preferably have a thermal contraction rate of 1 to 30%, more preferably 2 to 25%, and more preferably, according to a heat treatment test performed at a heating temperature of 100 ° C. and a heat treatment time of 60 seconds. It is 3 to 20%, more preferably 5 to 20%. The said thermal contraction rate shall refer to the thermal contraction rate of at least one of the thermal contraction rate of what is called MD direction, and the thermal contraction rate of what is called TD direction.

  The surface on the side of the pressure-sensitive adhesive layer 12 in the substrate 11 may be subjected to physical treatment, chemical treatment, or undercoating treatment in order to enhance adhesion with the pressure-sensitive adhesive layer 12. Physical treatments include, for example, corona treatment, plasma treatment, sandmat treatment, ozone exposure treatment, flame exposure treatment, high piezoelectric bombardment treatment, and ionizing radiation treatment. Chemical treatments include, for example, chromic acid treatment. The treatment for enhancing the adhesion is preferably performed on the entire surface of the substrate 11 on the pressure-sensitive adhesive layer 12 side.

  The thickness of the substrate 11 is preferably 40 μm or more, more preferably 50 μm or more, more preferably from the viewpoint of securing the strength for the substrate 11 to function as a support in the dicing tape 10 to the dicing die bond film X Is 55 μm or more, more preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape 10 to the dicing die bond film X, the thickness of the substrate 11 is preferably 200 μm or less, more preferably 180 μm or less, more preferably 150 μm or less .

  The pressure-sensitive adhesive layer 12 of the dicing tape 10 contains, as a base polymer, an acrylic polymer (first acrylic polymer) containing at least a monomer unit derived from lauryl (meth) acrylate and a monomer unit derived from 2-hydroxyethyl (meth) acrylate. contains. The first acrylic polymer is an acrylic copolymer containing at least lauryl (meth) acrylate and 2-hydroxyethyl (meth) acrylate as constituent monomers. In this first acrylic polymer, the molar ratio of units derived from lauryl (meth) acrylate to units derived from 2-hydroxyethyl (meth) acrylate is preferably 1 or more, more preferably 3 or more, more preferably 5 or more. is there. Further, the molar ratio is preferably 40 or less, more preferably 35 or less, and more preferably 30 or less. In the present embodiment, “(meth) acrylate” represents “acrylate” and / or “methacrylate”.

  The first acrylic polymer preferably contains monomer units derived from acrylic acid ester and / or methacrylic acid ester as the largest monomer unit by mass ratio, and as described above, the monomer unit derived from lauryl (meth) acrylate And at least a monomer unit derived from 2-hydroxyethyl (meth) acrylate.

  As a (meth) acrylic acid ester for forming a monomer unit of the first acrylic polymer, for example, carbonization of (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, (meth) acrylic acid aryl ester, etc. A hydrogen group containing (meth) acrylic acid ester is mentioned. Examples of (meth) acrylic acid alkyl esters other than lauryl (meth) acrylate include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t- Butyl ester, pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, tridecyl ester, tetradecyl ester, Hexadecyl ester, octadecyl ester, and eicosyl ester can be mentioned. Examples of (meth) acrylic acid cycloalkyl esters include cyclopentyl and cyclohexyl esters of (meth) acrylic acid. Examples of (meth) acrylic acid aryl esters include phenyl (meth) acrylate and benzyl (meth) acrylate. As the (meth) acrylic acid ester for the first acrylic polymer, only lauryl (meth) acrylate may be used, and one or more (meth) acrylic acid esters may be used together with the lauryl (meth) acrylate. You may use. In order to properly express in the adhesive layer 12 basic characteristics such as adhesiveness due to (meth) acrylic acid ester, the ratio of (meth) acrylic acid ester in all monomer components for forming the first acrylic polymer Preferably, it is 40 mass% or more, More preferably, it is 60 mass% or more.

  The first acrylic polymer is derived from other monomers that can be copolymerized with (meth) acrylic acid ester in order to modify cohesive strength, heat resistance, etc. in addition to 2-hydroxyethyl (meth) acrylate derived units It may contain a monomer unit. As such monomer components, for example, functional groups such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide, acrylonitrile and the like Included monomers and the like. Examples of carboxy group-containing monomers include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid. Anhydride monomers include, for example, maleic anhydride and itaconic anhydride. As a hydroxyl group-containing monomer other than 2-hydroxyethyl (meth) acrylate, for example, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth) acrylic The acid 8-hydroxyoctyl, 10-hydroxydecyl (meth) acrylate, 12-hydroxy lauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate may be mentioned. Examples of glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of sulfonic acid group-containing monomers include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth And acryloyloxy naphthalene sulfonic acid. Examples of phosphoric acid group-containing monomers include 2-hydroxyethyl acryloyl phosphate. As the other monomer for the first acrylic polymer, one type of monomer may be used, or two or more types of monomers may be used. In order to properly express in the adhesive layer 12 basic properties such as adhesiveness due to (meth) acrylic acid ester, the ratio of the other monomer component in all the monomer components for forming the first acrylic polymer is Preferably it is 60 mass% or less, More preferably, it is 40 mass% or less.

  The first acrylic polymer may contain a monomer unit derived from a polyfunctional monomer copolymerizable with a monomer component such as (meth) acrylic acid ester to form a crosslinked structure in the polymer backbone thereof . As such polyfunctional monomers, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (ie polyglycidyl (meth) acrylate), polyester Examples include (meth) acrylates and urethane (meth) acrylates. As a polyfunctional monomer for the first acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in all the monomer components for forming the first acrylic polymer is such that, when the pressure-sensitive adhesive layer 12 properly exhibits basic characteristics such as adhesiveness due to (meth) acrylic acid ester, Preferably it is 40 mass% or less, More preferably, it is 30 mass% or less.

  The first acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of polymerization techniques include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of high cleanliness in the semiconductor device manufacturing method in which dicing tape 10 to dicing die bond film X are used, it is preferable that the amount of low molecular weight substances in adhesive layer 12 in dicing tape 10 to dicing die bond film X be small. The number average molecular weight of the first acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000.

  The pressure-sensitive adhesive layer 12 or a pressure-sensitive adhesive for forming the same may contain, for example, an external crosslinking agent in order to increase the number average molecular weight of the first acrylic polymer which is the base polymer. As an external crosslinking agent for reacting with the first acrylic polymer to form a crosslinked structure, a polyisocyanate compound, an epoxy compound, a polyol compound (such as a polyphenol compound), an aziridine compound, and a melamine crosslinking agent can be mentioned. The content of the external crosslinking agent in the pressure-sensitive adhesive layer 12 or the pressure-sensitive adhesive for making the same is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, with respect to 100 parts by mass of the base polymer.

  The pressure-sensitive adhesive for forming such a pressure-sensitive adhesive layer 12 is configured as a pressure-sensitive adhesive (pressure-sensitive adhesive which can intentionally reduce the pressure-sensitive adhesive force by an external action such as radiation irradiation or heating). It may be configured as a pressure-sensitive adhesive (pressure-sensitive adhesive non-reducible type pressure-sensitive adhesive) in which the adhesion is hardly or not reduced depending on the external action. Depending on the method and conditions of singulation of semiconductor chips to be singulated using dicing die bond film X, any configuration can be appropriately selected. In the case of using an adhesive force-reducing adhesive as the adhesive in the adhesive layer 12, the adhesive layer 12 exhibits relatively high adhesive strength in the production process and use process of the dicing die-bonding film X and is relatively low. It becomes possible to use properly the state which shows adhesive force. For example, when the dicing die bond film X is used in a predetermined wafer dicing process, lifting or peeling of the adhesive layer 20 from the pressure-sensitive adhesive layer 12 using a state in which the pressure-sensitive adhesive layer 12 exhibits relatively high adhesive strength. Can be suppressed / prevented, but after that, the adhesive force of the adhesive layer 12 is reduced in the pickup step for picking up the semiconductor chip with the adhesive layer from the dicing tape 10 of the dicing die bond film X Then, the semiconductor chip with the adhesive layer can be properly picked up from the adhesive layer 12. As a radiation-curable pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12, for example, a pressure-sensitive adhesive of a type which cures by irradiation of electron beam, ultraviolet light, α-ray, β-ray, γ-ray or X-ray can be used. A pressure-sensitive adhesive (UV-curable pressure-sensitive adhesive) of a type that cures by ultraviolet irradiation can be particularly suitably used.

  As a radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12, radiation-polymerizable monomer components and oligomers having an unsaturated functional group such as a radiation-polymerizable carbon-carbon double bond in addition to the above-mentioned first acrylic polymer An additive-type radiation-curable pressure-sensitive adhesive containing a component can be mentioned.

  Examples of the above-mentioned radiation-polymerizable monomer component for producing a radiation-curable pressure-sensitive adhesive include, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate and dipentaerythritol mono. Examples include hydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the above-mentioned radiation-polymerizable oligomer component for producing a radiation-curable pressure-sensitive adhesive include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and have a molecular weight of about 100 to 30,000. Is appropriate. The total content of the radiation polymerizable monomer component and the oligomer component in the radiation curable pressure sensitive adhesive is determined within a range where the adhesion of the pressure sensitive adhesive layer 12 to be formed can be appropriately reduced, and a base polymer such as an acrylic polymer The amount is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass. In addition, as the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 includes, for example, a first polymer having a unsaturated functional group such as a radiation-polymerizable carbon-carbon double bond at the polymer side chain or in the polymer main chain Also included are intrinsic radiation-curable pressure-sensitive adhesives containing acrylic polymers. Such an internal-type radiation-curable pressure-sensitive adhesive is suitable for suppressing unintended changes in adhesion properties caused by the movement of low molecular weight components in the pressure-sensitive adhesive layer 12 to be formed.

  As a method for introducing a radiation-polymerizable carbon-carbon double bond into the first acrylic polymer, for example, a first monomer obtained by copolymerizing a monomer having a predetermined functional group (first functional group) is copolymerized After obtaining an acrylic polymer, a compound having a predetermined functional group (second functional group) capable of causing a reaction with a first functional group to be bonded and a radiation-polymerizable carbon-carbon double bond And a method of subjecting the first acrylic polymer to a condensation reaction or addition reaction while maintaining the radiation polymerization properties of the carbon-carbon double bond. The first acrylic polymer has at least a hydroxy group derived from 2-hydroxyethyl (meth) acrylate as the first functional group.

  Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, and an isocyanate group. And hydroxy groups. Among these combinations, a combination of a hydroxy group and an isocyanate group and a combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of the ease of reaction tracking. In addition, although it is technically difficult to produce a polymer having a highly reactive isocyanate group, from the viewpoint of ease of preparation or availability of the first acrylic polymer, the above-mentioned side of the first acrylic polymer is not preferable. It is more preferred if the first functional group is a hydroxy group and the second functional group is an isocyanate group. In this case, an isocyanate compound having both a radiation-polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, ie, a radiation-polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2 -Methacryloyloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate. When the unsaturated functional group-containing isocyanate compound is introduced or added to the first acrylic polymer, the molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate in the first acrylic polymer Is preferably 0.1 or more, more preferably 0.2 or more, and more preferably 0.3 or more. Moreover, as an acrylic polymer with a 1st functional group, what contains the monomer unit derived from said hydroxy-group containing monomer is suitable, and 2-hydroxyethyl vinyl ether, 4-hydroxy butyl vinyl ether, diethylene glycol is preferable. Those containing monomer units derived from ether compounds such as monovinyl ether are also suitable.

  The radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, and camphors. These include quinones, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypro Piophenone and 1-hydroxycyclohexyl phenyl ketone can be mentioned. Examples of acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 2,2-diethoxyacetophenone, and 2-methyl-1- [4- (methylthio)- Phenyl] -2-morpholinopropane-1 is mentioned. Examples of benzoin ether compounds include benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether. Examples of the ketal compounds include benzyl dimethyl ketal. Examples of the aromatic sulfonyl chloride compounds include 2-naphthalene sulfonyl chloride. Examples of photoactive oxime compounds include 1-phenone-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of benzophenone compounds include benzophenone, benzoylbenzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. Thioxanthone compounds include, for example, thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, and 2,4-diisopropyl. Thioxanthone is mentioned. The content of the photopolymerization initiator in the radiation-curable pressure-sensitive adhesive in the pressure-sensitive adhesive layer 12 is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer.

  Examples of the above-mentioned non-adhesive force reducing type pressure-sensitive adhesive include pressure-sensitive type pressure-sensitive adhesives. The pressure-sensitive adhesive includes a pressure-sensitive adhesive having a form in which a predetermined adhesive strength is secured while curing the radiation-curable pressure-sensitive adhesive described above with respect to the adhesive strength-reducing adhesive by radiation irradiation in advance. Radiation-curable pressure-sensitive adhesives in the form of being previously cured by radiation irradiation (radiation-cured radiation-curable pressure-sensitive adhesives) may be reduced depending on the content of the polymer component, even if the adhesion is reduced by radiation irradiation. It is possible to show the tackiness due to the polymer component, and to exhibit the tackiness that can be used for sticking and holding the adherend in a dicing step or the like. In the pressure-sensitive adhesive layer 12 of the present embodiment, one type of non-adhesive force reducing type adhesive may be used, or two or more types of non-adhesive force non-reducing type adhesive may be used. Further, the entire pressure-sensitive adhesive layer 12 may be formed of a non-adhesive force reducing type pressure-sensitive adhesive, or a part of the pressure-sensitive adhesive layer 12 may be formed of a non-adhesive force reducing type adhesive.

  On the other hand, as a pressure-sensitive adhesive other than the radiation-cured radiation-curable adhesive in the adhesive layer 12, for example, an acrylic-based adhesive having the above-mentioned first acrylic polymer as a base polymer can be suitably used.

  The pressure-sensitive adhesive layer 12 or a pressure-sensitive adhesive for forming the same may contain, in addition to the components described above, a crosslinking accelerator, a tackifier, an antiaging agent, a coloring agent such as a pigment or a dye, . The colorant may be a compound that is colored upon exposure to radiation. Such compounds include, for example, leuco dyes.

  The thickness of the pressure-sensitive adhesive layer 12 is preferably 1 to 50 μm, more preferably 2 to 30 μm, and more preferably 5 to 25 μm. Such a configuration is suitable, for example, in the case where the pressure-sensitive adhesive layer 12 contains a radiation-curable pressure-sensitive adhesive, in order to balance the adhesive force to the adhesive layer 20 before and after the radiation-curing of the pressure-sensitive adhesive layer 12 .

  The adhesive layer 20 of the dicing die bond film X has both a function as a thermosetting adhesive for die bonding and an adhesive function for holding a workpiece such as a semiconductor wafer and a frame member such as a ring frame. Have. The adhesive for forming the adhesive layer 20 may have a composition including a thermosetting resin and, for example, a thermoplastic resin as a binder component, or may be reacted with a curing agent to form a bond. It may have a composition comprising a thermoplastic resin with a curable functional group. When the adhesive for forming the adhesive layer 20 has a composition containing a thermoplastic resin with a thermosetting functional group, the adhesive needs to further contain a thermosetting resin (such as an epoxy resin). There is no. The adhesive layer 20 contains at least an acrylic polymer (second acrylic polymer) having a nitrile group as the thermoplastic resin.

  The second acrylic polymer contained in the adhesive layer 20 preferably contains a monomer unit derived from (meth) acrylic acid ester as the largest monomer unit by mass ratio. As such (meth) acrylic acid ester, for example, the same (meth) acrylic acid ester as described above for the first acrylic polymer for forming the pressure-sensitive adhesive layer 12 can be used. At the same time, the second acrylic polymer contains a monomer unit derived from a nitrile group-containing monomer. Examples of nitrile group-containing monomers include acrylonitrile, methacrylonitrile, and cyanostyrene. In addition to the monomer unit derived from the nitrile group-containing monomer, the second acrylic polymer may contain a monomer unit derived from another monomer copolymerizable with (meth) acrylic acid ester. As such other monomer components, for example, functional group-containing monomers such as carboxy group-containing monomer, acid anhydride monomer, hydroxy group-containing monomer, glycidyl group-containing monomer, sulfonic acid group-containing monomer, phosphoric acid group-containing monomer, acrylamide and the like Monomers and various multifunctional monomers are mentioned, and specifically, the first acrylic polymer for forming the pressure-sensitive adhesive layer 12 is described above as another monomer copolymerizable with (meth) acrylic acid ester. Similar ones can be used.

In the infrared absorption spectrum of the second acrylic polymer having a nitrile group, it is derived from the nitrile group with respect to the height of a peak around 1730 cm ^-1 derived from the carbonyl group (the peak of absorption attributed to C 由来 O stretching vibration) The ratio of the height of the peak around 2240 cm ^-1 (the peak of absorption attributed to C 帰 属 N stretching vibration) is 0.01 or more, preferably 0.015 or more, more preferably 0.02 It is the above and is 0.1 or less, preferably 0.09 or less, more preferably 0.08 or less. That is, the relative nitrile group content of the second acrylic polymer is set to such an extent that the value of the ratio falls within such a range.

  The adhesive layer 20 may contain a thermoplastic resin other than the acrylic polymer. As such a thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, Examples thereof include polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, saturated polyester resins such as PET and PBT, polyamide imide resins, and fluorine resins. In forming the adhesive layer 20, one type of thermoplastic resin may be used, or two or more types of thermoplastic resins may be used. In addition, from the viewpoint of coexistence with the adhesive property of the adhesive layer 20 to the ring frame described later at room temperature and a temperature near the same and the prevention of residue upon peeling, the adhesive layer 20 is a main component of the thermoplastic resin And a polymer having a glass transition temperature of -10 to 10 ° C. The main component of the thermoplastic resin is a resin component that occupies the largest mass ratio in the thermoplastic resin component.

As the glass transition temperature of the polymer, the glass transition temperature (theoretical value) determined based on the following Fox equation can be used. The Fox equation is a relationship between the glass transition temperature Tg of a polymer and the glass transition temperature Tgi of a homopolymer for each constituent monomer in the polymer. In the following Fox equation, Tg represents the glass transition temperature (° C.) of a polymer, Wi represents the weight fraction of the monomer i constituting the polymer, and Tgi represents the glass transition temperature (° C.) of the homopolymer of the monomer i ). For the glass transition temperature of homopolymers, literature values can be used. For example, “New Polymer Bunko 7 Introduction to Synthetic Resins for Paints” (Kitaoka Kyozo, Polymer Journal, 1995) and “Acrylester Catalog (1997) (Mitsubishi Rayon Co., Ltd.) mentions glass transition temperatures of various homopolymers. On the other hand, the glass transition temperature of the homopolymer of the monomer can also be determined by the method specifically described in JP-A-2007-51271.
Fox's formula 1 / (273 + Tg) = Σ [Wi / (273 + Tgi)]

  When the adhesive layer 20 includes a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermal resin. A curable polyimide resin is mentioned. In forming the adhesive layer 20, one type of thermosetting resin may be used, or two or more types of thermosetting resin may be used. An epoxy resin is preferable as the thermosetting resin contained in the adhesive layer 20 because the content of ionic impurities and the like that may cause corrosion of the semiconductor chip to be die-bonded tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.

  As an epoxy resin, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, ortho cresol Novolak type, trishydroxyphenylmethane type, tetraphenylol ethane type, hydantoin type, tris glycidyl isocyanurate type, and glycidyl amine type epoxy resins. Novolac epoxy resins, biphenyl epoxy resins, trishydroxyphenylmethane epoxy resins, and tetraphenylolethane epoxy resins are rich in reactivity with phenol resin as a curing agent, and are excellent in heat resistance, so they are adhesives. It is preferable as the epoxy resin contained in the layer 20.

  As a phenol resin which can act as a hardening agent of an epoxy resin, polyoxystyrenes, such as a novolak type phenol resin, resol type phenol resin, and polypara oxystyrene, are mentioned, for example. The novolac type phenol resin includes, for example, phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, and nonylphenol novolac resin. As a phenol resin which can act as a curing agent for epoxy resin, one kind of phenol resin may be used, or two or more kinds of phenol resins may be used. When used as a curing agent for an epoxy resin as an adhesive for die bonding, a phenol novolac resin or a phenol aralkyl resin tends to improve the connection reliability of the adhesive, so the epoxy contained in the adhesive layer 20 Preferred as a curing agent for resins.

  From the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin in the adhesive layer 20, the phenol resin preferably has 0 hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.

  The content ratio of the thermosetting resin in the adhesive layer 20 is preferably 5 to 60% by mass, more preferably 10 to 50 from the viewpoint that the adhesive layer 20 properly exhibits the function as a thermosetting adhesive. It is mass%.

  When the adhesive layer 20 contains the second acrylic polymer with a thermosetting functional group, examples of the thermosetting functional group include an epoxy group to a glycidyl group, a carboxy group, a hydroxy group, and an isocyanate group. Can be mentioned. Among these, an epoxy group and a carboxy group can be used suitably. That is, as a 2nd acrylic polymer with a thermosetting functional group, the 2nd acrylic polymer containing an epoxy group and / or a carboxy group can be used suitably. In addition, as the curing agent of the thermosetting functional group-containing second acrylic polymer, for example, the above-described one may be used as an external crosslinking agent which may be one component of the pressure-sensitive adhesive for forming the pressure-sensitive adhesive layer 12 Can. When the thermosetting functional group in the thermosetting functional group-containing second acrylic polymer is an epoxy group, a polyphenol compound can be suitably used as a curing agent, and for example, various phenol resins described above may be used. it can.

  The epoxy value of the second acrylic polymer in the adhesive layer 20 is preferably 0.05 eq / kg or more, more preferably 0.1 eq / kg or more, and more preferably 0.2 eq / kg or more. The epoxy value of the second acrylic polymer is preferably 1 eq / kg or less, more preferably 0.9 eq / kg or less. The content ratio of such an epoxy value-based second acrylic polymer in the adhesive layer 20 is preferably 5 to 95% by mass, and more preferably 40 to 80% by mass.

  The carboxylic acid value of the second acrylic polymer in the adhesive layer 20 is preferably 1 mg KOH / g or more, more preferably 3 mg KOH / g or more, more preferably 5 mg KOH / g or more. The carboxylic acid value of the second acrylic polymer is preferably 20 mg KOH / g or less, more preferably 18 mg KOH / g or less. The content ratio of the second acrylic polymer having such a carboxylic acid value in the adhesive layer 20 is preferably 5 to 95% by mass, more preferably 40 to 80% by mass.

  In order to achieve a certain degree of crosslinking of the adhesive layer 20 before being cured for die bonding, for example, it reacts with the functional group at the molecular chain end of the above-mentioned resin contained in the adhesive layer 20, etc. It is preferable to mix | blend the polyfunctional compound which can be combined as a crosslinking agent in the resin composition for adhesive layer formation. Such a configuration is suitable for improving the adhesive properties under high temperature and for improving the heat resistance of the adhesive layer 20. As such a crosslinking agent, a polyisocyanate compound is mentioned, for example. Examples of the polyisocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of polyhydric alcohol and diisocyanate. The content of the crosslinking agent in the resin composition for forming an adhesive layer is such that the cohesive force of the adhesive layer 20 formed is improved with respect to 100 parts by mass of the resin having the functional group that can react with the crosslinking agent and bond. The amount is preferably 0.05 parts by mass or more from the viewpoint, and preferably 7 parts by mass or less from the viewpoint of improving the adhesion of the adhesive layer 20 to be formed. In addition, as the crosslinking agent in the adhesive layer 20, another polyfunctional compound such as an epoxy resin may be used in combination with the polyisocyanate compound.

  The content of the high molecular weight component as described above in the adhesive layer 20 is preferably 50 to 100% by mass, and more preferably 50 to 80% by mass. The high molecular weight component is a component having a weight average molecular weight of 10000 or more. Such a configuration is preferable in order to achieve the cohesion of the adhesive layer 20 with respect to a ring frame described later at room temperature and a temperature in the vicinity thereof and the prevention of residue during peeling. The adhesive layer 20 may also contain a liquid resin that is liquid at 23 ° C. When the adhesive layer 20 contains such a liquid resin, the content ratio of the liquid resin in the adhesive layer 20 is preferably 1 to 10% by mass, more preferably 1 to 5% by mass. Such a configuration is preferable in order to achieve the cohesion of the adhesive layer 20 with respect to a ring frame described later at room temperature and a temperature in the vicinity thereof and the prevention of residue during peeling.

  The adhesive layer 20 may contain a filler. By blending the filler in the adhesive layer 20, it is possible to adjust the elastic modulus such as the tensile storage elastic modulus of the adhesive layer 20, and the physical properties such as the conductivity and the thermal conductivity. As a filler, although an inorganic filler and an organic filler are mentioned, an inorganic filler is especially preferable. As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystal Besides amorphous silica and amorphous silica, simple metals such as aluminum, gold, silver, copper and nickel, alloys, amorphous carbon black and graphite can be mentioned. The filler may have various shapes such as spheres, needles and flakes. As the filler in the adhesive layer 20, one kind of filler may be used, or two or more kinds of fillers may be used. The filler content of the adhesive layer 20 is preferably 30% by mass or less, more preferably 25% by mass or less, in order to ensure the adhesion of the adhesive layer 20 to the ring frame in the low temperature expansion step described later.

  When the adhesive layer 20 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. The configuration in which the average particle diameter of the filler is 0.005 μm or more is suitable for achieving high wettability and adhesiveness to an adherend such as a semiconductor wafer in the adhesive layer 20. The configuration that the average particle diameter of the filler is 10 μm or less is suitable for obtaining sufficient filler addition effect in the adhesive layer 20 and securing heat resistance. The average particle diameter of the filler can be determined, for example, using a light intensity type particle size distribution analyzer (trade name “LA-910”, manufactured by HORIBA, Ltd.).

  The adhesive layer 20 may contain other components as needed. The other components include, for example, flame retardants, silane coupling agents, and ion trapping agents. Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins. As a silane coupling agent, for example, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane can be mentioned. As an ion trap agent, for example, hydrotalcites, bismuth hydroxide, hydrous antimony oxide (for example, “IXE-300” manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (eg, “manufactured by Toagosei Co., Ltd.” IXE-100 ′ ′), magnesium silicate (eg, “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (eg, “Kyoward 700” manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent. Such compounds include, for example, triazole compounds, tetrazole compounds, and bipyridyl compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion. As such a triazole compound, for example, 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazolyl) -4-tert-octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1 , 2-dicarboxydiethyl) Zotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t-pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5) -t-Butylphenyl) -2H-benzotriazole, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2-ethylhexyl -3- [3-t-Butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- ( 1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) phenol, 2- (2H-benzotriazol-2-yl) -4-t-butylphenol, 2- (2 -Hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-) -Octylphenyl) -benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) ) Benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1,1-dimethylbenzyl) Phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2 -Hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, and methyl-3- [3- (2H-benzotriazol-2-yl) -5-t-butyl- 4-hydroxyphenyl] propionate is mentioned. Also, predetermined hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can be used as the ion trapping agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like. As other components as described above, one type of component may be used, or two or more types of components may be used.

  The thickness of the adhesive layer 20 is, for example, in the range of 1 to 200 μm. The lower limit of the thickness is preferably 3 μm, more preferably 5 μm. The upper limit of the thickness is preferably 100 μm, more preferably 80 μm.

  In the present embodiment, in the in-plane direction D of the dicing die bond film X, the outer peripheral end 20 e of the adhesive layer 20 is 1000 μm or less from the outer peripheral end 11 e of the substrate 11 and the outer peripheral end 12 e of the adhesive layer 12 in the dicing tape 10 , Preferably within a distance of 500 μm. That is, in the film in-plane direction D, the outer peripheral end 20 e of the adhesive layer 20 is between 1000 μm to 1000 μm inside, preferably 500 μm to 500 μm outside with respect to the outer edge 11 e of the substrate 11 And between the inner side 1000 μm and the outer side 1000 μm, preferably between the inner side 500 μm and the outer side 500 μm with respect to the outer peripheral end 12 e of the pressure-sensitive adhesive layer 12. In the configuration in which the dicing tape 10 or its adhesive layer 12 and the adhesive layer 20 thereon have substantially the same dimensions in the in-plane direction D, the adhesive layer 20 is added to the area of the work application. It will include the area of frame attachment.

When the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer in the dicing die-bonding film X, the pressure-sensitive adhesive after radiation curing in a T-peel test at a temperature of 23 ° C. and a peeling speed of 300 mm / min. The peel force between the layer 12 and the adhesive layer 20 is preferably 0.04 N / 20 mm or more, more preferably 0.05 N / 20 mm or more, more preferably 0.08 N / 20 mm or more. The peel strength between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peel speed of 300 mm / min is preferably 0.3 N / 20 mm or less. More preferably, it is 0.25 N / 20 mm or less, More preferably, it is 0.22 N / 20 mm or less. Such a T-type peeling test can be performed using a tensile tester (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The sample piece to be subjected to the test is produced as follows. First, the adhesive layer 12 is irradiated with ultraviolet light of 350 mJ / cm ² from the side of the substrate 11 in the dicing die bond film X to cure the adhesive layer 12. Next, a backing tape (trade name "BT-315", manufactured by Nitto Denko Corporation) is attached to the adhesive layer 20 side of dicing die bond film X, and then a test piece of 50 mm wide x 120 mm long is cut out. .

  The dicing die bond film X may be accompanied by a separator S as shown in FIG. Specifically, each dicing die bond film X may take a sheet-like form with a separator S, the separator S is long, and a plurality of dicing die bond films X are arranged thereon, and the separator S May be wound into the form of a roll. The separator S is an element for covering and protecting the surface of the adhesive layer 20 of the dicing die bond film X, and is separated from the film when using the dicing die bond film X. Examples of the separator S include plastic films and papers surface-coated with a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a release agent such as a fluorine release agent or a long chain alkyl acrylate release agent Be The thickness of the separator S is, for example, 5 to 200 μm.

  The dicing die bond film X having the above configuration can be manufactured, for example, as follows.

  First, as shown to Fig.3 (a), adhesive film 20 'is produced on separator S. As shown in FIG. The adhesive film 20 ′ is a long film to be processed and formed into the above-described adhesive layer 20. In preparation of adhesive film 20 ', after preparing the adhesive composition for adhesive layer formation, the said adhesive composition is first coated on separator S, and an adhesive composition layer is formed. As a coating method of an adhesive composition layer, roll coating, screen coating, and gravure coating are mentioned, for example. Next, in the adhesive composition layer, a crosslinking reaction is caused as needed by heating, and it is dried as required. The heating temperature is, for example, 70 to 160 ° C., and the heating time is, for example, 1 to 5 minutes. Adhesive film 20 'can be produced on separator S as mentioned above.

  Next, as shown in FIG. 3B, the pressure-sensitive adhesive layer 12 ′ is laminated on the adhesive film 20 ′. The pressure-sensitive adhesive layer 12 ′ is to be processed and formed into the pressure-sensitive adhesive layer 12 described above. In the formation of the pressure-sensitive adhesive layer 12 ′, for example, after preparing a pressure-sensitive adhesive solution for forming a pressure-sensitive adhesive layer, first, the pressure-sensitive adhesive solution is applied onto the adhesive film 20 ′ to form a pressure-sensitive adhesive film Do. Examples of the coating method of the pressure-sensitive adhesive solution include roll coating, screen coating, and gravure coating. Next, in the pressure-sensitive adhesive film, a crosslinking reaction is caused as needed by heating, and it is dried as required. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. The adhesive film 20 'processed and formed into the adhesive layer 20 and the pressure-sensitive adhesive layer 12' formed and processed into the pressure-sensitive adhesive layer 12 can be formed by such a laminate coating method.

Next, as shown in FIG. 3 (c), the base 11 'is pressure bonded onto the pressure-sensitive adhesive layer 12'. The base 11 ′ is to be processed and formed into the base 11 described above. The resin base 11 'is manufactured by a film forming method such as a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T die extrusion method, a coextrusion method, and the like. be able to. The film or substrate 11 'after film formation is subjected to a predetermined surface treatment as required. In this step, the bonding temperature is, for example, 30 to 50 ° C., preferably 35 to 45 ° C. The bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm, preferably 1 to 10 kgf / cm. By this process, a long laminate sheet having a laminated structure of the separator S, the adhesive film 20 ′, the pressure-sensitive adhesive layer 12 ′, and the base 11 ′ is obtained. When the pressure-sensitive adhesive layer 12 ′ is a radiation-curable pressure-sensitive adhesive layer as described above and the pressure-sensitive adhesive layer 12 ′ is irradiated with radiation such as ultraviolet light after bonding of the adhesive film 20 ′, for example, 'from the side of the pressure-sensitive adhesive layer 12' performs irradiation of radiation such as ultraviolet rays with respect to, its dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The irradiation area is, for example, the entire area formed on the pressure-sensitive adhesive layer 12 to be in close contact with the adhesive layer 20.

  Next, as shown in FIG. 3 (d), the above-mentioned laminated sheet body is processed such that the processing blade is pushed from the side of the base 11 'to the separator S (the cut portion in FIG. 3 (d) Is schematically represented by a thick line). For example, while rotating the laminated sheet in one direction F at a constant speed, it is disposed rotatably around an axis orthogonal to the direction F and a rotating roll with a processing blade with a processing blade for punching processing (shown in FIG. The processing bladed surface (not shown) is brought into contact with the base 11 'side of the laminated sheet with a predetermined pressing force. Thereby, the dicing tape 10 (the base material 11 and the pressure-sensitive adhesive layer 12) and the adhesive layer 20 are collectively processed and formed, and the dicing die bond film X is formed on the separator S. Thereafter, as shown in FIG. 3E, the material laminated portion around the dicing die bond film X is removed from the separator S.

  As described above, the dicing die bond film X can be manufactured.

  In the manufacturing process of the semiconductor device, as described above, an expanding step performed using dicing die bond film X, that is, an expanding step for cutting is performed to obtain a semiconductor chip with adhesive layer 20. In some cases, in the expanding step, it is necessary that cutting force appropriately act on the adhesive layer 20 on the dicing tape 10 in the dicing die bonding film X. As described above, the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film X includes the first acrylic polymer containing at least a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate. contains. Both the constitution that the acrylic polymer in the pressure-sensitive adhesive layer 12 contains a lauryl (meth) acrylate-derived unit and the arrangement containing a 2-hydroxyethyl (meth) acrylate-derived unit are the pressure-sensitive adhesive layer 12 of the dicing tape 10 and the same. It is suitable for achieving high shear adhesion with the upper adhesive layer 20, and thus appropriately exert a cutting force on the adhesive layer 20 on the dicing tape 10 expanded in the in-plane direction in the expanding step. Suitable for cutting. At the same time, as described above, the adhesive layer 20 in the dicing die bond film X contains the second acrylic polymer having a nitrile group. Such a configuration is preferable in order to increase the modulus of elasticity of the adhesive layer 20, and thus contributes to achieving good cleaving of the adhesive layer 20 in the expanding step for cleaving.

  In addition, in the dicing die bond film X, the first acrylic polymer in the pressure-sensitive adhesive layer 12 contains a lauryl (meth) acrylate-derived unit and the second acrylic polymer in the adhesive layer 20 has a nitrile group. It is preferable from the viewpoint of suppressing the binding interaction acting in the laminating direction between the two layers while securing high shear adhesion as described above between the two layers. In the case where the pressure-sensitive adhesive layer 12 and the adhesive layer 20 are formed by lamination through the above-described lamination coating method, for example, although the bonding interaction acting in the lamination direction between both layers is likely to be excessive, the pressure-sensitive adhesive The structure in which the acrylic polymer of the layer 12 contains a lauryl (meth) acrylate-derived unit and the acrylic polymer of the adhesive layer 20 has a nitrile group is a laminate of the two layers while securing high shear adhesion between the two layers. It is suitable for suppressing the binding interaction acting in the direction. And, the value of the above-mentioned ratio regarding the absorption peak in the infrared absorption spectrum of the second acrylic polymer is 0.01 or more, preferably 0.015 or more, more preferably 0.02 or more. The above-described configuration in which the relative content of the nitrile group of the base polymer is set is suitable for facilitating peeling or pickup of the semiconductor chip with the adhesive layer 20 from the adhesive layer 12 in the pickup step. At the same time, the value of the above ratio of the absorption peak in the infrared absorption spectrum of the second acrylic polymer is 0.1 or less, preferably 0.09 or less, more preferably 0.08 or less. The above-described configuration in which the relative content of the nitrile group of the acrylic polymer is set suppresses the occurrence of partial peeling, that is, floating from the adhesive layer 12 of the semiconductor chip with the adhesive layer 20 which has been broken in the expanding step. It is suitable for

  As described above, the dicing die bond film X cuts the adhesive layer 20 on the dicing tape 10 satisfactorily in the expanding step, and realizes a good pickup of the semiconductor chip with the adhesive layer 20 in the pickup step. It is suitable.

  The dicing die bond film X includes the dicing tape 10 or the pressure-sensitive adhesive layer 12 and the adhesive layer 20 thereon in the film plane so that the adhesive layer 20 includes the frame affixing area in addition to the work affixing area. It is possible to design with substantially the same dimensions in the direction. Specifically, as described above, in the in-plane direction of the dicing die bond film X, the outer peripheral edge 20e of the adhesive layer 20 is from the outer peripheral edge 11e of the base 11 of the dicing tape 10 or the outer peripheral edge 12e of the adhesive layer 12 It is possible to adopt a design that is within a distance of 1000 μm, preferably within a distance of 500 μm. Such a dicing die bond film X is processed to form one dicing tape 10 having a laminated structure of the base 11 and the pressure-sensitive adhesive layer 12, and to form one adhesive layer 20. It is suitable to carry out collectively by processing such as 1 punching processing. Such a dicing die bond film X is suitable not only for cutting the adhesive layer 20 well in the expanding step but also for achieving good pickup of the semiconductor chip with the adhesive layer 20 in the pickup step, as well as the number of manufacturing steps. Suitable for efficient manufacturing from the viewpoint of reduction of

  In the first acrylic polymer in the pressure-sensitive adhesive layer 12 in the dicing die bond film X, the molar ratio of the lauryl (meth) acrylate-derived unit to the 2-hydroxyethyl (meth) acrylate-derived unit is preferably as described above. Is 1 or more, more preferably 3 or more, more preferably 5 or more. Such a configuration is such that bonding between the pressure-sensitive adhesive layer 12 of the dicing tape 10 and the adhesive layer 20 thereon acts in the laminating direction of the two layers while securing high shear adhesion as described above. It is preferable to suppress the interaction, and thus contributes to the realization of a good pickup in the pickup process. Further, as described above, the molar ratio is preferably 40 or less, more preferably 35 or less, and more preferably 30 or less. Such a configuration ensures the adhesion or adhesiveness between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 of the dicing tape 10, and in the expanding step, from the pressure-sensitive adhesive layer 12 of the semiconductor chip with the adhesive layer 20. It is suitable for suppressing the occurrence of partial peeling or lifting.

  The first acrylic polymer in the pressure-sensitive adhesive layer 12 of the dicing tape 10 in the dicing die-bonding film X is preferably an adduct of an unsaturated functional group-containing isocyanate compound which is a radiation polymerizable component. In this case, the molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate of the first acrylic polymer in the pressure-sensitive adhesive layer 12 is preferably 0.1 or more as described above. More preferably, it is 0.2 or more, more preferably 0.3 or more. These configurations are suitable for appropriately curing the pressure-sensitive adhesive layer 12 through the reaction of the first acrylic polymer and the unsaturated functional group-containing isocyanate compound. Curing the pressure-sensitive adhesive layer 12 prior to the expanding step contributes to a good cleavage of the adhesive layer 20 in the expanding step. Further, from the viewpoint of reduction of low molecular weight components in the pressure-sensitive adhesive layer 12 after curing, the first acrylic polymer and unsaturated functional group for forming the first acrylic polymer to which the unsaturated functional group-containing isocyanate compound is added In the reaction composition containing a group-containing isocyanate compound, the molar ratio of the unsaturated functional group-containing isocyanate compound to the unit derived from 2-hydroxyethyl (meth) acrylate of the first acrylic polymer is preferably as described above. Is 2 or less, more preferably 1.5 or less, more preferably 1.3 or less.

  When the pressure-sensitive adhesive layer 12 of the dicing tape 10 is a radiation-curable pressure-sensitive adhesive layer 12 in the dicing die bond film X, after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peeling speed of 300 mm / min. As described above, the peeling force between the adhesive layer 12 and the adhesive layer 20 is preferably 0.04 N / 20 mm or more, more preferably 0.05 N / 20 mm or more, more preferably 0.08 N / 20 mm or more It is. Such a configuration ensures the adhesion or adhesion between the pressure-sensitive adhesive layer 12 of the dicing tape 10 and the adhesive layer 20 thereon, and the pressure-sensitive adhesive layer of the semiconductor chip with the adhesive layer 20 in the expanding step. It is suitable for suppressing the occurrence of partial peeling from 12 or floating. The peel force between the pressure-sensitive adhesive layer 12 and the adhesive layer 20 after radiation curing in a T-peel test under conditions of a temperature of 23 ° C. and a peel speed of 300 mm / min is preferably 0.3 N as described above. / 20 mm or less, more preferably 0.25 N / 20 mm or less, more preferably 0.22 N / 20 mm or less. Such a configuration is suitable for realizing a good pickup in the pickup process.

  4 to 9 show a method of manufacturing a semiconductor device according to an embodiment of the present invention.

  In the semiconductor device manufacturing method, first, as shown in FIG. 4A and FIG. 4B, the dividing groove 30a is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in a state where the semiconductor wafer W is held by the wafer processing tape T1. A dividing groove 30a of a predetermined depth is formed on the first surface Wa side using a rotating blade such as a dicing apparatus. The dividing groove 30a is an air gap for dividing the semiconductor wafer W into semiconductor chip units (in FIG. 4 to FIG. 6, the dividing groove 30a is schematically represented by a thick line).

  Next, as shown in FIG. 4C, bonding of the wafer processing tape T2 having the adhesive surface T2a to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 from the semiconductor wafer W Peeling is performed.

  Next, as shown in FIG. 4D, in a state where the semiconductor wafer W is held by the wafer processing tape T2, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. (Wafer thinning step). Grinding can be performed using a grinding apparatus equipped with a grinding wheel. In the present embodiment, the semiconductor wafer 30A that can be singulated into the plurality of semiconductor chips 31 is formed by this wafer thinning step. Specifically, the semiconductor wafer 30A has a portion (connection portion) in which the portion to be singulated into the plurality of semiconductor chips 31 in the wafer is connected on the second surface Wb side. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the tip of the dividing groove 30a on the second surface Wb side is, for example, 1 to 30 μm, preferably 3 to 20 μm. It is.

Next, as shown in FIG. 5A, the semiconductor wafer 30A held by the wafer processing tape T2 is bonded to the adhesive layer 20 of the dicing die bond film X. Thereafter, as shown in FIG. 5B, the wafer processing tape T2 is peeled off from the semiconductor wafer 30A. When the pressure-sensitive adhesive layer 12 in the dicing die bond film X is a radiation-curable pressure-sensitive adhesive layer, the semiconductor wafer 30A is attached to the adhesive layer 20 in place of the above-described radiation irradiation in the manufacturing process of the dicing die bond film X. After the alignment, the pressure-sensitive adhesive layer 12 may be irradiated with radiation such as ultraviolet light from the side of the substrate 11. Irradiation dose is, for example, 50 to 500 mJ / cm ^2, preferably 100~300mJ / cm ^2. The region (irradiated region R shown in FIG. 1) where the irradiation as the adhesive force reducing measure of the pressure-sensitive adhesive layer 12 is performed in the dicing die bond film X is, for example, the peripheral edge thereof in the adhesive layer 20 bonding region in the pressure-sensitive adhesive layer 12 This is an area excluding parts.

  Next, after the ring frame 41 is attached on the adhesive layer 20 in the dicing die bond film X, as shown in FIG. 6A, the dicing die bond film X with the semiconductor wafer 30A is a holder for the expanding device. It is fixed at 42.

  Next, a first expanding step (cool expanding step) under relatively low temperature conditions is performed as shown in FIG. 6B, and the semiconductor wafer 30A is singulated into a plurality of semiconductor chips 31. At the same time, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the dicing die bond film X in the figure, and dicing of the dicing die bond film X bonded to the semiconductor wafer 30A. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30A. This expanding is performed under the condition that a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa occurs in the dicing tape 10. The temperature conditions in the cool expanding step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 moves up) in the cool expanding step is preferably 0.1 to 100 mm / sec. Further, the amount of expansion in the cool expanding step is preferably 3 to 16 mm.

  In this process, cutting occurs in a thin and fragile portion of the semiconductor wafer 30A, and singulation to the semiconductor chip 31 occurs. At the same time, in this step, deformation is suppressed in each region where each semiconductor chip 31 is in close contact with the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded A tensile stress generated in the dicing tape 10 acts on a portion facing the dividing groove between 31 without such a deformation suppressing action. As a result, in the adhesive layer 20, the portion facing the dividing groove between the semiconductor chips 31 is cut. After the process, as shown in FIG. 6C, the push-up member 43 is lowered to release the expanded state of the dicing tape 10.

  Next, a second expanding step under relatively high temperature conditions is performed as shown in FIG. 7A, and the distance (separation distance) between the adhesive layer-attached semiconductor chips 31 is expanded. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised again, and the dicing tape 10 of the dicing die bond film X is expanded. The temperature conditions in the second expanding step are, for example, 10 ° C. or higher, preferably 15 to 30 ° C. The expanding speed (speed at which the push-up member 43 rises) in the second expanding step is, for example, 0.1 to 10 mm / second, preferably 0.3 to 1 mm / second. Moreover, the expand amount in a 2nd expand process is 3-16 mm, for example. In this process, the separation distance of the semiconductor chip 31 with an adhesive layer is expanded to such an extent that the semiconductor chip 31 with an adhesive layer can be properly picked up from the dicing tape 10 in a pickup process described later. After this process, as shown in FIG. 7B, the push-up member 43 is lowered to release the expanded state of the dicing tape 10. In order to suppress narrowing of the separation distance of the semiconductor chip 31 with an adhesive layer on the dicing tape 10 after releasing the expanded state, a portion outside the holding area of the semiconductor chip 31 in the dicing tape 10 before releasing the expanded state. It is preferable to heat and shrink.

  Next, after passing through a cleaning process for cleaning the semiconductor chip 31 side of the dicing tape 10 with the semiconductor chip 31 with an adhesive layer using a cleaning liquid such as water, as shown in FIG. The layered semiconductor chip 31 is picked up from the dicing tape 10 (pickup step). For example, with regard to the semiconductor chip 31 with an adhesive layer to be picked up, after raising the pin member 44 of the pickup mechanism in the lower side of the dicing tape 10 in the drawing with the adhesive layer, push it through the dicing tape 10. Do. In the pickup step, the push-up speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 44 is, for example, 50 to 3000 μm.

  Next, as shown in FIG. 9A, the semiconductor chip 31 with the adhesive layer picked up is temporarily fixed to the predetermined adherend 51 via the adhesive layer 21. Examples of the adherend 51 include a lead frame, a TAB (Tape Automated Bonding) film, a wiring board, and a separately manufactured semiconductor chip. The shear adhesive force at 25 ° C. at the time of temporary adhesion of the adhesive layer 21 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa for the adherend 51. The configuration in which the shear adhesive strength of the adhesive layer 21 is 0.2 MPa or more is the bonding surface between the adhesive layer 21 and the semiconductor chip 31 or the adherend 51 by ultrasonic vibration or heating in the wire bonding step described later. It is suitable for performing wire bonding appropriately by suppressing the occurrence of shear deformation. The shear adhesive strength at 175 ° C. at the time of temporary adhesion of the adhesive layer 21 to the adherend 51 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa.

  Next, as shown in FIG. 9B, the electrode pad (not shown) of the semiconductor chip 31 and the terminal portion (not shown) of the adherend 51 are electrically connected through the bonding wire 52 ((b)) Wire bonding process). The wire connection between the electrode pad of the semiconductor chip 31 and the terminal portion of the adherend 51 and the bonding wire 52 is realized by ultrasonic welding accompanied by heating so that the adhesive layer 21 is not thermally cured. As the bonding wire 52, for example, a gold wire, an aluminum wire, or a copper wire can be used. The wire heating temperature in wire bonding is 80-250 degreeC, for example, Preferably it is 80-220 degreeC. The heating time is a few seconds to a few minutes.

  Next, as shown in FIG. 9C, the semiconductor chip 31 is sealed with a sealing resin 53 for protecting the semiconductor chip 31 and the bonding wires 52 on the adherend 51 (sealing process). In this process, the thermal curing of the adhesive layer 21 proceeds. In this process, for example, the sealing resin 53 is formed by a transfer molding technique performed using a mold. For example, an epoxy resin can be used as a constituent material of the sealing resin 53. In this step, the heating temperature for forming the sealing resin 53 is, for example, 165 to 185 ° C., and the heating time is, for example, 60 seconds to several minutes. If the curing of the sealing resin 53 does not proceed sufficiently in the present step (the sealing step), a post-curing step for completely curing the sealing resin 53 is performed after the present step. Even if the adhesive layer 21 is not completely thermally cured in the sealing step, complete thermal curing of the adhesive layer 21 together with the sealing resin 53 is possible in the post-curing step. In the post-curing step, the heating temperature is, for example, 165 to 185 ° C., and the heating time is, for example, 0.5 to 8 hours.

  As described above, a semiconductor device can be manufactured.

  In the present embodiment, as described above, after the semiconductor chip 31 with the adhesive layer is temporarily fixed to the adherend 51, the wire bonding step is performed without the adhesive layer 21 being completely cured by heat. Instead of such a configuration, in the present invention, after the semiconductor chip 31 with an adhesive layer is temporarily fixed to the adherend 51, the wire bonding step may be performed after the adhesive layer 21 is thermally cured. .

  In the semiconductor device manufacturing method according to the present invention, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. After passing through the process described above with reference to FIG. 4C, in the wafer thinning process shown in FIG. 10, with the semiconductor wafer W held by the wafer processing tape T2, the wafer has a predetermined thickness. A semiconductor wafer divided body 30B including the plurality of semiconductor chips 31 and held by the wafer processing tape T2 is formed by grinding from the second surface Wb. In this step, a method (first method) of grinding the wafer may be employed until the dividing groove 30a itself is exposed to the second surface Wb side, or from the second surface Wb to the dividing groove 30a A method of grinding the wafer to the front, and then forming a crack between the division groove 30a and the second surface Wb by the action of the pressing force from the rotary grinding wheel to the wafer to form the semiconductor wafer division body 30B Method) may be adopted. Depending on the method employed, the depth from the first surface Wa of the dividing groove 30a formed as described above with reference to FIGS. 4A and 4B is appropriately determined. . In FIG. 10, the dividing grooves 30a subjected to the first method, or the dividing grooves 30a subjected to the second method and the cracks connected thereto are schematically represented by thick lines. In the present invention, the semiconductor wafer segments 30B manufactured in this manner are bonded to the dicing die bond film X instead of the semiconductor wafer 30A, and then each of the steps described above with reference to FIGS. 5 to 9 are performed. May be

  11A and 11B show a first expanding step (cool expanding step) performed after the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. As shown in FIG. In this step, the hollow cylindrical push-up member 43 provided in the expanding device is abutted against the dicing tape 10 at the lower side of the dicing die bond film X in the figure and is raised, and the dicing die bond film X bonded with the semiconductor wafer divisions 30B The dicing tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer segments 30B. This expanding is performed under the condition that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 400 mm / sec. Moreover, the expand amount in this process is 50-200 mm, for example. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation occurs in each region in which the semiconductor chips 31 of the semiconductor wafer divisions 30B are in close contact While being suppressed, a tensile stress generated in the dicing tape 10 acts on a portion facing the dividing groove 30 a between the semiconductor chips 31 in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, the portion facing the dividing groove 30a between the semiconductor chips 31 is cut.

  In the semiconductor device manufacturing method according to the present invention, a semiconductor wafer 30C manufactured as follows is used instead of the above-described configuration in which the semiconductor wafer 30A or the semiconductor wafer divided body 30B is bonded to the dicing die bond film X. It may be bonded to the dicing die bond film X.

As shown in FIGS. 12A and 12B, first, the modified region 30b is formed on the semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) are already formed on the first surface Wa side of the semiconductor wafer W, and wiring structures (not shown) necessary for the semiconductor elements are already formed on the first surface Wa. It is done. In this step, after the wafer processing tape T3 having the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, the semiconductor processing apparatus collects the wafer inside the wafer while the semiconductor wafer W is held by the wafer processing tape T3. The laser beam combined with the light spots is irradiated to the semiconductor wafer W from the side opposite to the wafer processing tape T3 along the planned dividing line, and the semiconductor wafer W enters the semiconductor wafer W due to ablation by multiphoton absorption. The modified region 30 b is formed. The modified region 30 b is a weakened region for separating the semiconductor wafer W into semiconductor chip units. The method of forming the modified region 30b on the planned dividing line by laser beam irradiation in the semiconductor wafer is described in detail in, for example, JP-A-2002-192370. The laser beam irradiation conditions in the present embodiment are, for example, It adjusts suitably within the range of the following conditions.
<Laser light irradiation conditions>
(A) Laser light Laser light source Semiconductor laser pumped Nd: YAG laser Wavelength 1064 nm
Laser beam spot cross section 3.14 × 10 ^-8 cm ²
Oscillation mode Q switch pulse Repetition frequency 100kHz or less Pulse width 1μs or less Output 1mJ or less Laser light quality TEM00
Polarization characteristics Linearly polarized (B) focusing lens Magnification: up to 100 times NA 0.55
Transmittance 100% or less for laser light wavelength (C) Moving speed of mounting table on which semiconductor substrate is mounted 280 mm / s or less

  Next, as shown in FIG. 12C, while the semiconductor wafer W is held by the wafer processing tape T3, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. As a result, the semiconductor wafer 30C that can be singulated into the plurality of semiconductor chips 31 is formed (wafer thinning step). In the present invention, after the semiconductor wafer 30C manufactured as described above is bonded to the dicing die bond film X instead of the semiconductor wafer 30A, each process described above with reference to FIGS. 5 to 9 is performed. It is also good.

  13A and 13B show a first expanding step (cool expanding step) performed after the semiconductor wafer 30C is bonded to the dicing die bond film X. As shown in FIG. In this process, the hollow cylindrical push-up member 43 provided in the expanding device is raised against the dicing tape 10 at the lower side of the dicing die bond film X in the figure, and dicing of the dicing die bond film X bonded to the semiconductor wafer 30C. The tape 10 is expanded so as to be stretched in a two-dimensional direction including the radial direction and the circumferential direction of the semiconductor wafer 30C. This expanding is performed under the condition that a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa is generated in the dicing tape 10. The temperature conditions in this step are, for example, 0 ° C. or less, preferably −20 to −5 ° C., more preferably −15 to −5 ° C., and more preferably −15 ° C. The expanding speed (speed at which the push-up member 43 rises) in this step is, for example, 1 to 400 mm / sec. Moreover, the expand amount in this process is 50-200 mm, for example. By such a cool expanding process, the adhesive layer 20 of the dicing die bond film X is cut into small pieces of the adhesive layer 21 to obtain the semiconductor chip 31 with an adhesive layer. Specifically, in this process, a crack is formed in the fragile modified region 30 b in the semiconductor wafer 30 C, and singulation to the semiconductor chip 31 occurs. At the same time, in this step, in the adhesive layer 20 in close contact with the pressure-sensitive adhesive layer 12 of the dicing tape 10 to be expanded, deformation is suppressed in each region in which the semiconductor chips 31 of the semiconductor wafer 30C are in close contact. On the other hand, the tensile stress generated in the dicing tape 10 acts on the portion of the wafer facing the cracked portion in a state where such a deformation suppressing action does not occur. As a result, in the adhesive layer 20, the portion facing the crack formation portion between the semiconductor chips 31 is cut.

  In the present invention, the dicing die bond film X can be used to obtain a semiconductor chip with an adhesive layer as described above, but an adhesive in the case where a plurality of semiconductor chips are stacked for three-dimensional mounting. It can also be used to obtain a layered semiconductor chip. A spacer may be interposed between the semiconductor chips 31 in such a three-dimensional mounting together with the adhesive layer 21 or may not be interposed.

Example 1
<Adhesive layer>
Acrylic polymer A ₁ (copolymer of ethyl acrylate, butyl acrylate, acrylonitrile and glycidyl methacrylate, the above-mentioned second acrylic polymer, weight average molecular weight is 1.2 million, glass transition temperature is 0 ° C., epoxy value And 54 parts by mass of 0.4 eq / kg, 3 parts by mass of solid phenol resin (trade name “MEHC-7851 SS”, solid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd.), liquid phenol resin (trade name “MEH-8000H”) , 3 parts by mass of liquid at 23 ° C., manufactured by Meiwa Kasei Co., Ltd., and 40 parts by mass of silica filler (trade name "SO-C2", average particle diameter is 0.5 μm, manufactured by Admatex Co., Ltd.) The mixture was added to and mixed, and the concentration was adjusted so that the viscosity at room temperature was 700 mPa · s, to obtain an adhesive composition. Next, an adhesive composition is applied using an applicator on a silicone release-treated surface of a PET separator (38 μm thick) having a silicone release-treated side to form a coating film, The membrane was heat dried at 130 ° C. for 2 minutes. As described above, a 10 μm thick adhesive layer in Example 1 was produced on the PET separator. The composition of the adhesive layer in Example 1 is listed in Table 1 (in Table 1, the units of each numerical value representing the composition of the composition are the relative “mass” in the composition except for the numerical values related to the MOI described later Section).

<Adhesive layer>
100 mol parts of lauryl acrylate (LA), 20 mol parts of 2-hydroxyethyl acrylate (2 HEA), and 100 mol parts of these monomer components in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction). This gave a polymer solution containing an acrylic polymer P _1. For acrylic polymers P ₁ of the polymer solution, the weight average molecular weight (Mw) of 450,000, a glass transition temperature of 9.5 ° C., the molar ratio of LA from units for 2HEA derived units is five. Next, a polymer solution containing the acrylic polymer P _1, 2-meth and methacryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction at room temperature for 48 hours under air atmosphere Stir (addition reaction). In the reaction solution, the amount of the MOI is 16 mol parts with respect to the lauryl acrylate 100 parts by mol, the molar ratio of the MOI amount to the total amount of 2HEA derived units and the hydroxyl groups in the acrylic polymer P ₁ 0 .8. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.01 parts by mass of the acrylic polymer P ₁ 100 parts by weight. By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having the methacrylate group in the side chain (the above-mentioned first acrylic polymer to which the unsaturated functional group-containing isocyanate compound was added) was obtained. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₂ ) are added to the polymer solution. The mixture is added and mixed with a trade name “IRGACURE 127” (manufactured by BASF), and toluene is added to the mixture to dilute it so that the viscosity of the mixture at room temperature is 500 mPa · s to obtain a pressure-sensitive adhesive solution. The Next, an adhesive solution is applied using an applicator on the above-mentioned adhesive layer formed on the PET separator to form a coating, and the coating is heat-dried at 130 ° C. for 2 minutes. Then, a 10 μm thick adhesive layer was formed on the adhesive layer. Next, using a laminator, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "RB-0104", thickness 130 μm, manufactured by Kurashiki Spinning Co., Ltd.) on the exposed surface of this adhesive layer Were bonded at room temperature. Next, a punching process was performed in which the processing blade was pushed from the side of the EVA base material to the separator. As a result, a disc-shaped dicing die bond film having a diameter of 370 mm having a laminated structure of EVA base material / pressure-sensitive adhesive layer / adhesive layer was formed on the separator. Next, ultraviolet rays were irradiated from the side of the EVA substrate to the pressure-sensitive adhesive layer in the dicing tape. In ultraviolet irradiation, a high pressure mercury lamp was used, and the irradiation integrated light amount was 350 mJ / cm ² . As described above, a dicing die-bonding film of Example 1 having a laminated structure including a dicing tape (EVA base / adhesive layer) and an adhesive layer was produced.

[Examples 2 and 3]
In the same manner as the dicing die-bonding film of Example 1 except that the compounding amount of MOI is changed to 16 mol parts to 12 mol parts (Example 2) or 8 mol parts (Example 3) in the formation of the pressure-sensitive adhesive layer. The dicing die-bonding films of Examples 2 and 3 were produced.

Example 4
Acrylic polymer A ₂ (trade name “Teisan resin SG-70L”, an acrylic copolymer having a nitrile group, which is an acrylic copolymer having a nitrile group, instead of the acrylic polymer A ₁ 54 parts by mass in the formation of the adhesive layer Polymer, weight average molecular weight 900,000, glass transition temperature -13 ° C, carboxylic acid value 5 mg KOH / g, Nagase ChemteX Co., Ltd. 54 parts by weight), and MOI in formation of adhesive layer A dicing die bond film of Example 4 was produced in the same manner as the dicing die bond film of Example 1 except that the compounding amount was changed to 16 mol parts to 8 mol parts.

Comparative Example 1
<Adhesive layer>
100 mol parts of 2-ethylhexyl acrylate (2EHA), 20 mol parts of 2-hydroxyethyl acrylate (2HEA), and these monomers in a reaction vessel equipped with a cooling pipe, a nitrogen introducing pipe, a thermometer, and a stirring device A mixture containing 0.2 parts by mass of benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60 ° C. for 10 hours under a nitrogen atmosphere (polymerization reaction) . This gave a polymer solution containing an acrylic polymer P _3. For acrylic polymers P ₃ of the polymer solution, the weight average molecular weight (Mw) of 400,000, a glass transition temperature of 60 ° C.. Next, a polymer solution containing the acrylic polymer P _3, 2-meta and methacryloyloxyethyl isocyanate (MOI), the mixture containing the dibutyltin dilaurate as a catalyst for addition reaction at room temperature for 48 hours under air atmosphere Stir (addition reaction). In the reaction solution, the compounding amount of MOI is 20 mole parts with respect to 100 mole parts of the above 2-ethylhexyl acrylate. Further, in the reaction solution, the amount of dibutyltin dilaurate is 0.01 parts by mass of the acrylic polymer P ₃ 100 parts by weight. This addition reaction, to obtain a polymer solution containing an acrylic polymer P ₄ having a methacrylate group in the side chain. Next, 1 part by mass of a polyisocyanate compound (trade name "Corronate L", manufactured by Tosoh Corp.) and 2 parts by mass of a photopolymerization initiator (per 100 parts by mass of acrylic polymer P ₄ ) are added to the polymer solution. The mixture is added and mixed with a trade name “IRGACURE 127” (manufactured by BASF), and toluene is added to the mixture to dilute it so that the viscosity of the mixture at room temperature is 500 mPa · s to obtain a pressure-sensitive adhesive solution. The A dicing die-bonding film of Comparative Example 1 was produced in the same manner as the dicing die-bonding film of Example 1 except that the pressure-sensitive adhesive solution was used in the formation of the pressure-sensitive adhesive layer on the adhesive layer.

Comparative Example 2
Acrylic polymer A ₃ (trade name “Palcron W-116.3”, an acrylic ester polymer containing a monomer unit derived from ethyl acrylate instead of 54 parts by mass of the acrylic polymer A ₁ in the formation of the adhesive layer, weight Average molecular weight is 900,000, glass transition temperature is −22 ° C., carboxylic acid value is 7.8 mg KOH / g, hydroxyl value is 1.1 mg KOH / g, and 54 parts by mass of Negami Industrial Co., Ltd. are used. A dicing die bonding film of Comparative Example 2 was produced in the same manner as the dicing die bonding film 1 described above.

Infrared absorption spectrum
The infrared absorption spectrum of each of acrylic polymers A ₁ , A ₂ and A ₃ was measured using an infrared spectrometer (trade name “FT / IR-230”, manufactured by JASCO Corporation). obtains a height of the second peak of the first peak in the vicinity of the height and 2240 cm ^-1 in the vicinity of 1730 cm ^-1 in the obtained infrared absorption spectrum, the value of the ratio of the height of the second peak to the height of the first peak Calculated. The values are listed in Table 1. The first peak near 1730 cm ⁻¹ is the absorption peak attributed to the C = O stretching vibration. The height of the first peak, a straight line passing through the points of the point and 1860 cm ^-1 in 1670 cm ^-1 on the resulting infrared absorption spectrum in terms of the baseline, 1670 cm ^-1 in the infrared absorption spectrum Of the maximum value (there was only one around 1730 cm ^-1 ) in the range from ¹ to 1860 cm ^-1 to the baseline (specifically, the difference in absorbance). The second peak near 2240 cm ⁻¹ is the peak of absorption attributed to the C≡N stretching vibration. The height of the second peak, 2270 cm a straight line passing through the points of the same infrared absorption point and 2270 cm ^-1 of the spectrum on the 2220Cm ^-1 in terms of the baseline, from 2220cm ^-1 in the infrared absorption spectrum ^It was determined as the value (specifically, the difference in absorbance) of the maximum value (only one around 2240 cm ^-1 ) within the range up to ^{-1 with} respect to the baseline.

<T-type peeling test>
The peeling force between the pressure-sensitive adhesive layer and the adhesive layer was examined as follows for each of the dicing die-bonding films of Examples 1 to 4 and Comparative Examples 1 and 2. First, test pieces were produced from each dicing die bond film. Specifically, ultraviolet rays of 350 mJ / cm ² are applied to the adhesive layer from the substrate side in the dicing die bond film to cure the adhesive layer, and then a backing tape is formed on the adhesive layer side of the dicing die bond film. (Brand name “BT-315”, manufactured by Nitto Denko Corporation) was bonded, and a test piece of a size of 50 mm wide × 120 mm long was cut out from the dicing die bond film with the backing tape. Then, using a tensile tester (trade name “Autograph AGS-J”, manufactured by Shimadzu Corporation), the test pieces were subjected to a T-peel test to measure peel force (N / 20 mm). In this measurement, the temperature condition was 23 ° C., and the peeling rate was 300 mm / min. The measurement results are listed in Table 1.

<Implementation of Expanding Process and Pickup Process>
Using the respective dicing die-bonding films of Examples 1 to 4 and Comparative Examples 1 and 2, the following bonding step, first expanding step for cutting (cool expanding step), second expanding for separation A process (normal temperature expanding process) and a pickup process were performed.

  In the bonding step, the divided semiconductor wafer held by the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the adhesive layer of the dicing die bond film, and then the semiconductor wafer The wafer processing tape was peeled off from the divided body. In bonding, a laminator was used, the bonding speed was 10 mm / sec, the temperature condition was 60 ° C., and the pressure condition was 0.15 MPa. In addition, the semiconductor wafer divided body is formed and prepared as follows. First, about a bare wafer (12 inches in diameter, 780 μm in thickness, manufactured by Tokyo Chemical Industry Co., Ltd.) held with a ring frame on a wafer processing tape (trade name “V12S-R2-P”, manufactured by Nitto Denko Corporation) A split groove (25 μm in width, 50 μm in depth, 6 mm in one section) for singulation by its rotating blade using a dicing apparatus (trade name “DFD6260”, manufactured by Disco Co., Ltd.) from the side of one side thereof Forming a 12 mm grid). Next, a wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the dividing groove formation surface, and then the above-mentioned tape for wafer processing (trade name "V12S-R2-P") Was peeled from the wafer. After this, the wafer is ground to a thickness of 20 μm by grinding from the side of the other surface of the wafer (the surface on which the dividing grooves are not formed) using a back grind apparatus (trade name “DGP 8760”, manufactured by Disco Co., Ltd.) The ground surface was mirror-finished by dry polishing performed using the same apparatus. As described above, the semiconductor wafer divided body (in the state of being held by the wafer processing tape) was formed. The divided semiconductor wafer includes a plurality of semiconductor chips (6 mm × 12 mm).

  The cool expanding process was performed in the cool expanding unit using a die separation apparatus (trade name "Die Separator DDS 3200", manufactured by Disco Co., Ltd.). Specifically, first, in a frame affixing area (around the work affixing area) of the adhesive layer in the above-mentioned dicing die bond film accompanied by a semiconductor wafer division body, a SUS ring frame with a diameter of 12 inches (made by Disco Corporation ) At room temperature. Next, the dicing die bond film was set in the apparatus, and the dicing tape of the dicing die bond film with the semiconductor wafer divided body was expanded by the cool expand unit of the apparatus. In this cool expanding step, the temperature is -15 ° C, the expanding speed is 100 mm / sec, and the expanding amount is 7 mm.

  The normal temperature expanding process was performed in the normal temperature expanding unit using a die separation apparatus (trade name "Die Separator DDS 3200", manufactured by Disco Co., Ltd.). Specifically, the dicing tape of the dicing die-bonding film with the semiconductor wafer divided body subjected to the above-mentioned cool expanding process was expanded by the normal temperature expanding unit of the same apparatus. In this normal temperature expanding step, the temperature is 23 ° C., the expanding speed is 1 mm / sec, and the expanding amount is 10 mm. Thereafter, the heat shrinking treatment was performed on the dicing die bond film which has undergone normal temperature expansion. The processing temperature is 200 ° C., and the processing time is 20 seconds.

  In the pick-up process, using a device having a pick-up mechanism (trade name "Die bonder SPA-300", manufactured by Shinkawa Co., Ltd.), pick-up of the semiconductor chip with adhesive layer separated on dicing tape was tried. . The pickup speed of the pin member is 1 mm / sec, the pushing amount is 2000 μm, and the pickup evaluation number is 5.

  In the above-described process performed using each of the dicing die-bonding films of Examples 1 to 4 and Comparative Examples 1 and 2, no lifting of the semiconductor chip with the adhesive layer from the dicing tape occurs in the cool expanding step. In the case of the chipping, it is evaluated as good (○), and the pick-up property is good (場合) when all the semiconductor chips with the adhesive layer can be picked up from the dicing tape in the pick-up process. In the case where the evaluation was not made, the pickup property was evaluated as poor (x). The evaluation results are listed in Table 1.

[Evaluation]
According to the dicing die-bonding film of Examples 1 to 4, in the cool expanding step, the adhesive layer can be favorably cut without causing the semiconductor chip with the adhesive layer to float from the dicing tape, and further, the pickup In the process, the semiconductor chip with the adhesive layer could be properly picked up.

X dicing die bond film 10 dicing tape 11 base 11e outer peripheral end 12 adhesive layer 12e outer peripheral end 20, 21 adhesive layer 20e outer peripheral end W, 30A, 30C semiconductor wafer 30B semiconductor wafer divided body 30a divided groove 30b modified region 31 semiconductor Chip

Claims (9)

A dicing tape having a laminated structure including a substrate and an adhesive layer;
And an adhesive layer releasably adhering to the pressure-sensitive adhesive layer in the dicing tape,
The pressure-sensitive adhesive layer contains a first acrylic polymer including a unit derived from lauryl (meth) acrylate and a unit derived from 2-hydroxyethyl (meth) acrylate,
The adhesive layer contains a second acrylic polymer having a nitrile group,
In the infrared absorption spectrum of the second acrylic polymer, the ratio of the height of the peak near 2240 cm ^-1 derived from the nitrile group to the height of the peak near 1730 cm ^-1 derived from the carbonyl group is 0.01 Dicing die bond film which is ~ 0.1.   The dicing die bond film according to claim 1, wherein an epoxy value of the second acrylic polymer is 0.05 to 1 eq / kg.   The dicing die bond film according to claim 1, wherein a carboxylic acid value of the second acrylic polymer is 1 to 20 mg KOH / g.   The dicing die bond film according to any one of claims 1 to 3, wherein a content ratio of the second acrylic polymer in the adhesive layer is 5 to 95% by mass.   The molar ratio of the unit derived from the lauryl (meth) acrylate to the unit derived from the 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is 1 to 40. Dicing die bond film as described in. The pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer,
The peeling force between the pressure-sensitive adhesive layer and the adhesive layer after radiation curing in the T-peel test at a temperature of 23 ° C. and a peel speed of 300 mm / min is 0.04 to 0.3 N / 20 mm. The dicing die bond film according to any one of claims 1 to 5.   The dicing die-bonding film according to any one of claims 1 to 6, wherein the first acrylic polymer is an adduct of an unsaturated functional group-containing isocyanate compound.   The dicing die-bonding film according to claim 7, wherein a molar ratio of the unsaturated functional group-containing isocyanate compound to a unit derived from the 2-hydroxyethyl (meth) acrylate in the first acrylic polymer is 0.1 or more.   The dicing die-bonding film according to any one of claims 1 to 8, wherein the outer peripheral end of the adhesive layer is at a distance within 1000 μm from the outer peripheral end of the pressure-sensitive adhesive layer in the film in-plane direction.

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